TWI305658B - Semiconductor wafer cleaning system - Google Patents

Semiconductor wafer cleaning system Download PDF

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Publication number
TWI305658B
TWI305658B TW94114099A TW94114099A TWI305658B TW I305658 B TWI305658 B TW I305658B TW 94114099 A TW94114099 A TW 94114099A TW 94114099 A TW94114099 A TW 94114099A TW I305658 B TWI305658 B TW I305658B
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Taiwan
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wafer
cleaning
station
finger
deionized water
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TW94114099A
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Chinese (zh)
Inventor
Jin-No Yoon
Jin-Tae Kim
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Doosan Mecatec Co Ltd
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Priority to TW94114099A priority Critical patent/TWI305658B/en
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Publication of TWI305658B publication Critical patent/TWI305658B/en

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Description

1305658 九、發明說明: 【發明所屬技術領域】 本發明有關於一種半導體晶圓清洗系統。更明確地說, 本發明有關於一種半導體晶圓清洗系統’其中,具有拋光 表面的晶圓在每一獨立設置的清洗站當中進行各別地清洗 和沖洗操作’該半導體晶圓清洗系統將晶圓送入每一清洗 站的等候時間最小化’且因此’藉由解決晶圓製程中一延 遲現象的解決,改善了晶圓的整體生產率。 【先前技術】 一般而言,一半導體晶圓製程包含兩步驟:其一是藉 著諸如化學機械拋光機(CMP機具)的使用,拋光一晶圓 的表面;及其二是清洗晶圓的步驟,其目的在於移除拋光 晶圓表面時所產生的粒子。 藉著相關技術中現今已知的各種半導體清洗系統的應 用’晶圓的清洗步驟以各種方法來執行。典型地,一晶圓 的清洗步驟包括··在-清洗站上,將特定化學品喷漢在晶 圓表面之上清洗’再利用純水(亦即,去離子纟,雨) 沖洗晶圓表面’·在移人接續的清洗站之後,晶圓被重複地 進行噴減 '清洗和沖洗^干次;最後,在晶圓被插p乾 燥站之後’晶圓被乾燥。也就是說,纟_工作站裡,分別 地以化學品執行清洗步驟和以去離子水進行沖洗步驟。 因此,由於在習知技術的半導體晶圓清洗系統裡頭, >月洗和沖洗兩程序係在同—清洗系統禮進行,纟單一工作 站進行此類程序是很㈣m卜,此Μ洗和沖 6 1305658 必須在隨後的工作站裡重複若干次,這更嚴重地增加時間 的消耗同時’導致時間的延遲,所以,在拋光模組平台 上已拋光的晶圓在進入清洗系統之前必須等候,因而,造 成整個製程的落後,由於無法保持整體流程順暢地進行, 所以’造成了晶圓生產率的降低。 也就是說,當在一清洗站使用兩種以上的化學品進行 /月洗耘序時,為了避免因化學品種類而造成各別清洗程序 之間化學成分的不同所形成的PH衝擊,用於中性化的沖 _洗#王序疋必要的。針對此目的,一對由濕海綿所製成的清 洗刷被使用,每一清洗刷各別地設置在靠近晶圓之兩側, 以方疋轉的方式刷擦晶圓。因為,透過每一刷軸,用於清洗 的化學品和用於沖洗的去離子水被交替地和重複地提供, 在不同化學品被供應的清洗程序之改變的初始階段裡,已 、二包3在其中一刷子裡頭的去離子水在一特定時間裡無法 正確地維持不同化學品的濃度,所以’清洗的效果被降I。 因此,需要更長的清洗時間,以便執行正常的清洗程序, ®這將使得生產率降低。 並且,在習知技術的清洗系統裡,沒有執行一特定的 初步清洗程序,由於拋光程序所造成的高污染晶圓馬上被 直接送入清洗站,經過上述的刷子,並被立即清洗,所以, 刷子的污染程度加重,且清洗能力降低。除此之外,刷子 在它們的使用期間内被縮短,因此,需要經常地被更換, 這將造成一 CMP機具保養的不方便性,同時,增加作業 成本。 〃 7 1305658 此外,經由各別清洗站,完成清洗和沖洗程序若干次 之後’藉著高速旋轉,晶圓在一乾燥站當中被乾燥,用於 抓握和旋轉晶圓的抓握結構係由四個同時以徑向操作的抓 握指狀件所構成。當一扁平狀晶圓係以晶圓之扁平位置並 未完全對準的情況下被塞入一清洗站時,各別抓握指狀件 的抓握清況亚不均勻一致,使得高速旋轉的晶圓非常容易 受到損壞而停機。因此’晶圓的對準程序是必須的,但是, 用於對準所需要的時間將造成整個製程的延遲,此連帶著 _額外地降低了晶圓的生產率。 然而,習知技術當中的半導體清洗系統具有一魔大的 結構,其中,各別的清洗、沖洗和乾燥站被設置成-列, 所以,需要廣闊的空間來設置和應用該習知技術的清洗系 統。 【發明内容】 本毛明的目的在於解決習知技術所產生的問題,及提 供一種不具有晶圓整體製程延遲現象以及具有晶圓生產奉 •改善的優點的半導體晶圓清洗系、絶,其係藉由在將晶圓進 行各別清洗和刷洗程序之後,使晶圓進入每一清洗站的等 候時間最小化。 本發明的另一目的在於,藉由分離化學品和去離子水 供應結構來改善清洗效果以及縮短需用於清洗_㈤,而提 供一種具有改善晶圓生產率的半導體晶圓清洗系統。 本發明的另一目的在於,藉由刷子將拋光後高污染之 晶圓清洗至一定水準的主清洗程序之執行,提供一種半導 1305658 體晶圓清洗系統’其具有最大清洗能力和最小刷子亏九 度,同時,由於刷子使用壽命的延長,因此 有:程 整體製程所需的成本效益。 八有執行 本發明的另一目的在於提供—種具有晶圓 的半導體晶圓清洗系統,其一方面能 改善 叫月b稭著用於旋辕去畆 晶圓之乾燥站中抓握結構的改良,不管晶圓輪入的方= :: ::持均勻抓握狀態’甚至當晶圓以高速旋轉時,在益 知知曰曰圓的顧慮下,具體化一穩定結直 …、 生HU圓類型的穩定結構,藉此 產 的夂2丨丨批南要執仃晶圓 的各別對準,且縮短整體製程所需的時間。 本發明的另一目的在於,藉由令 沖、、“ Μ 〃 精由改良和縮小用於清洗、 m無之母一工作站的結構性配置,而由於設置機具 工間的表小化,提供一種且古ra本咖 清洗系統。 干导體日日圓 清洗上述目的,依據本發明一樣態的半導體晶圓 主:方、日日0上面,預先清除晶圓上的大部分粒子;一第一 二站2用於藉由摩擦式地旋轉一對配置成與晶圓之前 :後表面接觸的刷子’及經由_獨立設置之化學品噴 子.一 ' 而第一次清洗剩餘的粒 、先 丨洗站其用於藉由將清洗液噴灑於在第-清 —楚…主 貧光之日日圓的表面,以進行沖洗程序,· w 、 ,、弟一 4洗站相同之結構和方式, 用於藉由一獨立設置之化學σ 子噴邐器,將化學品喷灑於在 9 13056581305658 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor wafer cleaning system. More specifically, the present invention relates to a semiconductor wafer cleaning system in which a wafer having a polished surface is individually cleaned and rinsed in each independently disposed cleaning station. The waiting time for round feeds to each cleaning station is minimized 'and thus' improves overall wafer productivity by addressing the resolution of a delay in the wafer process. [Prior Art] In general, a semiconductor wafer process consists of two steps: one is to polish the surface of a wafer by using, for example, a chemical mechanical polishing machine (CMP machine); and the other is to clean the wafer. The purpose is to remove particles generated when polishing the surface of the wafer. The application's wafer cleaning steps of various semiconductor cleaning systems known in the art are performed in a variety of ways. Typically, a wafer cleaning step includes: at a cleaning station, cleaning a particular chemical onto the surface of the wafer. Reusing pure water (ie, deionized, rain) to rinse the wafer surface. 'After the transfer station is cleaned, the wafer is repeatedly sprayed off 'washing and rinsing ^ dry times; finally, after the wafer is inserted into the p drying station' the wafer is dried. That is to say, in the 纟_ workstation, the washing step is performed with chemicals and the rinsing step with deionized water, respectively. Therefore, due to the fact that in the conventional semiconductor wafer cleaning system, the monthly washing and rinsing procedures are carried out in the same-cleaning system, and the single workstation performs such a procedure very (four) m, this washing and rushing 6 1305658 must be repeated several times in subsequent workstations, which adds more time to the cost while causing a delay in time, so the polished wafer on the polishing module platform must wait before entering the cleaning system, thus causing The backwardness of the entire process, due to the inability to keep the overall process flowing smoothly, has caused a decline in wafer productivity. That is to say, when two or more chemicals are used in a cleaning station for the monthly washing process, in order to avoid the pH shock caused by the difference in chemical composition between the respective cleaning procedures due to the type of the chemical, Neutralized rushing_washing #王序疋 necessary. For this purpose, a pair of cleaning brushes made of a wet sponge are used, and each cleaning brush is separately disposed on both sides of the wafer to brush the wafer in a twisting manner. Because, through each brush shaft, the chemicals used for cleaning and the deionized water used for rinsing are alternately and repeatedly provided, in the initial stage of the change of the cleaning procedure in which different chemicals are supplied, 3 Deionized water in one of the brushes does not properly maintain the concentration of different chemicals for a specific period of time, so the effect of cleaning is reduced by one. Therefore, a longer cleaning time is required in order to perform a normal cleaning procedure, which will result in reduced productivity. Moreover, in the cleaning system of the prior art, a specific preliminary cleaning procedure is not performed, and the highly contaminated wafer caused by the polishing procedure is immediately sent directly to the cleaning station, passes through the above brush, and is immediately cleaned, so The degree of contamination of the brush is increased and the cleaning ability is reduced. In addition, the brushes are shortened during their use and, therefore, need to be replaced frequently, which causes inconvenience in the maintenance of a CMP machine and increases the operating cost. 〃 7 1305658 In addition, after several cleaning and rinsing procedures are completed via separate cleaning stations, 'by high-speed rotation, the wafer is dried in a drying station, and the gripping structure for gripping and rotating the wafer is four At the same time, it consists of a radially operated gripping finger. When a flat wafer is inserted into a cleaning station with the flat position of the wafer not fully aligned, the gripping conditions of the respective gripping fingers are unevenly uniform, so that the high-speed rotation is performed. The wafer is very susceptible to damage and downtime. Therefore, the wafer alignment procedure is necessary, but the time required for alignment will cause delays in the overall process, which in turn will additionally reduce wafer productivity. However, the semiconductor cleaning system of the prior art has a magical structure in which the respective cleaning, rinsing, and drying stations are arranged in a column, so that a large space is required to set and apply the cleaning of the prior art. system. SUMMARY OF THE INVENTION The purpose of the present invention is to solve the problems caused by the prior art, and to provide a semiconductor wafer cleaning system that does not have the overall process delay phenomenon of the wafer and has the advantages of improved wafer fabrication. The waiting time for wafers to enter each cleaning station is minimized by performing separate cleaning and brushing procedures on the wafer. Another object of the present invention is to provide a semiconductor wafer cleaning system with improved wafer productivity by separating the chemical and deionized water supply structures to improve cleaning and shortening the need for cleaning. Another object of the present invention is to provide a semi-conductive 1305658 wafer cleaning system with a maximum cleaning power and a minimum brush loss by brushing the polished highly contaminated wafer to a certain level of main cleaning procedure. Nine degrees, at the same time, due to the extension of the brush life, there is a cost-effectiveness of the overall process. Another object of the present invention is to provide a semiconductor wafer cleaning system with a wafer, which on the one hand can improve the grip structure of a drying station for spinning a wafer. Regardless of the wafer wheeling side =: ::: holding the uniform grip state even when the wafer is rotating at a high speed, in the interest of knowing the knowledge, the realization of a stable straightening..., raw HU circle The type of stable structure, which is used to produce the individual alignment of the wafers, and shorten the time required for the overall process. Another object of the present invention is to provide a kind of squeezing, "simplification and reduction of the structural configuration for cleaning, m-female mother-station workstation, and And the ancient ra coffee cleaning system. The dry conductor Japanese yen cleans the above purpose, according to the invention, the semiconductor wafer main: square, day 0, pre-clear most of the particles on the wafer; a first two stations 2 for cleaning the remaining particles, the first washing station by frictionally rotating a pair of brushes configured to be in contact with the front surface of the wafer: the rear surface and the chemical sprayer independently disposed via _ It is used to spray the cleaning liquid on the surface of the Japanese yen on the first day of the first light to perform the rinsing process, and the structure and method of the same The chemical was sprayed on a separate set of chemical sigma squirts at 9 1305658

第一沖洗站已被第—々油法、主、土 — A 乐_人冲洗清洗之晶圓的表面,以便第二 次清洗殘留在晶圓$ #主1 ^ Μ ± 圚之剛表面及後表面上的粒子;一第二沖 洗站,其用於將清洗液喷 _ 貝/鹿%隹弟一清洗站已被第二次清 洗之晶圓的表面上,Lv /兩% 、山Α 以便進打沖洗程序,·和,一乾燥站, 其以向速旋轉在第—、、由、土 弟一冲洗站已被沖洗之晶圓,利用所產生 的離心力,乾燥殘留的清洗液。 此處’其車父佳的县• 贫 0疋.忒第一沖洗站更包括一轉向與傳 送裝置,其用於藉由將兮ρ笛 ^ + Α 將4已第一次清洗之晶圓相對於進入 第一沖洗站之方向作Q〇疮 T 90度的變化,改變已第一次清洗之 晶圓進入下一個程岸夕较&士人 序之移動方向,並將該已第一次清洗之 晶圓送入該下一個程序中。 並且,其係較佳地,如果該轉向和傳送裝置包括:一 ^升和下降平板’其係垂直地設置,並由一特定線性運動 4置所上升和下Ρ牛’複數個滾輪拖架,係以固定間隙相互 平行的方式垂直地固定於上升和下降平板的一侧壁上,且 係裝設在輸送帶之間,用於启、、奋 用於在滾輪拖架和傳送帶之間無 擾的情況下,自前一程序傳送哕S 、 1寻达°亥日日®,和,複數個轉向釦 傳送滾輪,其等以一方式祐*片 万式被支撐,亦即,轉向和傳送滾 本刀別地&置在滾輪拖架的内側’使得轉向和傳送滾輪: 兩端可在上升和下降平板之一側壁和滾^ 滾動。 而之間 另外,其係較佳地,如果該初步清洗站包括:The first flushing station has been rinsed with the surface of the wafer by the first-oil method, the main, the soil-A-man, so that the second cleaning remains on the surface of the wafer $# main 1 ^ Μ ± 圚a particle on the surface; a second rinsing station for spraying the cleaning liquid _ _ _ 隹 隹 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一The rinsing program, and, a drying station, which rotates the wafer which has been washed at the first, the, and the soil, is used to rotate the residual cleaning liquid by the centrifugal force generated. Here, 'the county where the car is good. ・ Poor 0. The first washing station further includes a steering and conveying device, which is used to compare the wafers that have been cleaned for the first time by 兮 笛 笛 + Α In the direction of entering the first flushing station, the change of the temperature of the acne T 90 is changed, and the wafer that has been cleaned for the first time is changed to the direction of the next course, and the direction of the movement of the person is the first time. The cleaned wafer is fed into the next program. Moreover, preferably, if the steering and conveying device comprises: a lifting and lowering plate, which is vertically disposed, and is raised by a specific linear motion 4 and the lower yak's plurality of roller carriers, They are vertically fixed to a side wall of the ascending and descending plates in a manner that the fixed gaps are parallel to each other, and are installed between the conveyor belts for opening and uninterrupted between the roller carriage and the conveyor belt. In the case of the previous procedure, the 哕S, 1 search for the 亥 日 ®, and the plurality of steering buckle transfer rollers are supported in a manner that is supported by the one-piece type, that is, the steering and the transfer The knife's ground & is placed on the inside of the roller carriage' to make the steering and transport rollers: Both ends can roll on one side of the rise and fall plates and roll ^. In addition, it is preferred that if the preliminary cleaning station comprises:

抓握和旋轉裝置;和,-去離子水噴m|f,其設置在^ 的上方’主要作用在於當進給高壓去離子水時,藉著—K ]0 1305658 = 灑’除去大的粒子;其中,該晶圓抓握 括.一支撐平板,在該支撐平板當中,一上 和下降導引執道沿著一 且力同开少成,一上升和下降平 與上升和下降導引執道 導 。以便被上升和下降 v引軌道所導引;一壓缸,里 〃作芏直伸張和收縮,以便上 Τ下降δ亥上升和下ρ备单h · $ 被一個以卜沾下中千板,和,複數個導引滾輪,其等 圓,者 j i ^ ^便奴轉被抓握的晶 田载入或釋放晶圓時,該等導引滾輪將 降平板-起上升和下膝/ 引展輪將酼者上升和下 幵和下降,以便不與晶圓發生干擾。 另外,其係較佳地,如果令一生 分別包括:一對刷;甘“第β洗站和第二清洗站 對刷子,其等藉由與晶圓兩表 洗該晶圓,該笨刷工〆 間呵衣面的接觸,清 成,其係依賴當料^ / 作用之濕海綿所製 子貝田刷子無動作時 流道被供應去離子水 ,。—隹子水之 稱地朝晶圓的兩側表 噴灑时,該喷灑器對 口貝丨麗化學品。 °襄化予品通過及 另外’其係較# # , w ^ 也,如果該乾燥站包括· ^ 軸,該軸向上延伸, 匕栝.—中央旋轉 並由一設置在該麻加i 傳送的動力所旋轉· _ °卩之驅動裝置所 中央旋轉軸之外gj 、、.向上以等距沿著 立蓉八。 周,形成在中央旋轉轴的頂m 具專分別於徑向卜 j j貝。卩,刼作桿, ^ , 以相同距離及能沿著切口 μ 〜 穿過五個切口;指狀件Μ * 的 方式被設置’ #备由 〃 ‘ # ’其等以垂直的 , t 金鍵勒’母一指狀件縣辟 式與每一操作桿〜是以可旋轉的 u吏什當每-操作桿移動 1305658 二等::件懸臂能與每一操作桿結合;抓握指狀件, :指狀件懸臂一體形成,在指狀件懸 ::抓:指狀件具有-溝槽,該溝槽能套接-晶圓之邊 ^連接元件’其設置在指狀件㈣线制的一頂部 二指狀件之間;和,-在連接元件裡頭的中央軸銷, 拖站,、連接 板用於支撐晶®,並作用為一 動。’以執行指狀件懸臂和抓握指狀件之間的一相對擺 1 本發明有利之作用 依據本發明的半導體晶圓清洗系統,其具有下述之優 點.藉由分離和獨凡生 °之…洗站和沖洗站中之已表面拋 曰曰圓U和沖洗程序之執行,使得晶圓進人每一清洗 站的等候時間被取小化,藉此,解決晶圓製造之整體製程 的延遲現象,顯著地改善晶圓的生產率。 卜本i明的另一優點為··藉由化學品和去離子水 供應結構的分離,使得清洗效益被改善^時,藉由每一 站清洗時間的縮短,使得晶圓生產率被改善。也就是說, 將供應化學品和去離U λ z_l tjj. 子水之、·.σ構分離為由化學品噴灑器供 」匕學品和由刷子供應去離子水的兩獨立程序結構,使得 當在—清洗站使用兩種以上的化學品料行清洗程序時, 不再有由於不同化學品之間不同成分所造成的化學品衝擊 顧慮’藉由化學品精確濃度的保持,其能夠將清洗作用最 佳化,因此’藉著清洗時間的縮短,使得晶圓的生產率改 善0 22 1305658 日 依據本發明的半導體晶圓清洗系統,其同時能 由席,由刷子所執行的清洗程序係處於下列的狀態:在 刷子執仃一主要清洗程序之前,先提供一個能執行初步 /月洗程序的初步法、、杰 曰 ±、 月/先站’將完成拋光程序之後具高污染的 主圓::二_定的程度,藉由刷子污染程度的最小化,將 、“b取大化,由於停留在該半導體晶圓清洗系統當中 的時間被延長,因μ # □此郎4作業成本,深具系統保養優點。 另外,依據本發明,藉由晶圓抓握結構被改良成一五 握扣狀件型蟪,其能夠完成-穩定結構的具體化,不 :日日圓=达人方向為何,皆能保持-固定的抓握狀態,當 #圓、π逮%轉時,不再有任何破損現象發生,同時,不 :Β曰圓的型態為何’例々"扁平區域型態或切口型態,皆 月“《括化為-稳定結構,因&,不再需要執行—個別的晶 圓的對準動作,藉著整體程序所需時間的縮短,使得晶圓 的生產率被改善。 卜依據本發明’藉由於ί青洗、沖洗和乾燥各站之 •^供m向和傳送裝置’藉此,將清洗、沖洗和乾燥 各站之-改良為一 L型配置’由於供應空間的最小化,本 發明達成整體單元的空間佔用效益之最大化。 【實施方式】 下文备中’藉著隨附圖例的參考,依據本發明的半導 體晶圓清洗系統之若干較佳具體實施例被詳細說明。Grip and rotating device; and, - deionized water spray m | f, which is set above ^ 'main role is to remove large particles by - K ] 0 1305658 = sprinkle when feeding high pressure deionized water Wherein, the wafer grip includes a support plate in which an upper and a lower guide track are along with one force and a force, and a rising and falling flat and a rising and falling guide are performed. Guide. In order to be guided by the ascending and descending v-guide track; a pressure cylinder, the 〃 〃 芏 芏 和 和 和 和 和 和 , δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ And, a plurality of guide rollers, which are equal in circle, and when the slave is loaded or released, the guide rollers will lower the plate and rise and knee/extension. The wheel raises and lowers and lowers the leader so as not to interfere with the wafer. In addition, it is preferred that if a lifetime includes: a pair of brushes; and a "the second washing station and the second cleaning station pair of brushes, which are washed by the wafer and the wafer, the stupid brushworker The contact between the two sides of the clothes is clear, and the system relies on the material of the wet sponge made by the wet sponge. The flow is supplied with deionized water when the brush is not actuated. - The water is called the two sides of the wafer. When the side surface is sprayed, the sprinkler is on the mouth of the sapphire chemical. ° The sputum is passed and the other is '##, w ^ Also, if the drying station includes the ^ ^ axis, the axial extension, 匕栝.—The center rotates and is rotated by the center of the rotating shaft of the driving device that is rotated by the power transmitted by the mAh. The gj, . The top m of the central rotating shaft is specific to the radial direction. The 卩, 刼, rod, ^, at the same distance and can be cut along the slit μ ~ through five incisions; the way the finger Μ * is set ' #备由〃 '# 'It's equal to vertical, t gold key Le 'mother one finger-shaped county style with each operating rod ~ With a rotatable u 吏 when each lever moves 1,305,658 second:: cantilever can be combined with each lever; grasping fingers The finger has a groove that can be sleeved - the edge of the wafer ^ is connected between a top two fingers of the finger (four) wire; and, - in the connecting element Central pin, tow station, connecting plate for supporting the crystal® and acting as a movement. 'To perform an opposite pendulum between the finger cantilever and the gripping finger 1 The advantageous effect of the invention is in accordance with the invention The semiconductor wafer cleaning system has the following advantages: by separating and arranging the ... the surface throwing circle U and the rinsing process in the washing station and the rinsing station, so that the wafers enter each The waiting time of the cleaning station is reduced, thereby solving the delay of the overall process of wafer manufacturing, and significantly improving the productivity of the wafer. Another advantage of the present invention is that by chemical and deionization Separation of the water supply structure, so that cleaning benefits are improved ^ by each The shortening of the cleaning time of the station has improved the productivity of the wafer. That is to say, the supply of chemicals and the separation of the U.S. water to the U λ z_l tjj. Two separate program structures for the supply of deionized water by the brush, so that when the cleaning station uses more than two chemical cleaning procedures, there is no longer any chemical impact caused by different components between different chemicals. By maintaining the precise concentration of the chemical, it is possible to optimize the cleaning action, so that the productivity of the wafer is improved by the shortening of the cleaning time. 0 22 1305658 The semiconductor wafer cleaning system according to the present invention can simultaneously By the table, the cleaning procedure performed by the brush is in the following state: before the brush performs a main cleaning procedure, a preliminary method capable of performing the preliminary/monthly washing procedure, and the first step, the month/first station is provided. The main circle with high pollution after the completion of the polishing process: the degree of the second set, by minimizing the degree of contamination of the brush, "b will be enlarged, due to staying in the semiconductor crystal Among washing system time is prolonged, because this Lang 4 μ # □ ABC, deep system maintenance advantages. In addition, according to the present invention, the wafer gripping structure is improved into a five-claw type 蟪, which can complete the stabilizing structure, and does not: the yen = the direction of the person, can be maintained - fixed The grip state, when #圆,ππ% turns, there is no longer any damage phenomenon, at the same time, no: why the round shape is 'example' "flat area type or incision type, all month "Complete to - stable structure, because & no longer need to perform - individual wafer alignment actions, shortening the time required by the overall process, so that the productivity of the wafer is improved. According to the present invention' By washing, rinsing, and drying the stations, the m-direction and the transfer device 'by cleaning, rinsing, and drying the stations - improving to an L-shaped configuration', the present invention is minimized due to the minimization of the supply space The maximum space utilization benefit of the overall unit is achieved. [Embodiment] Hereinafter, several preferred embodiments of the semiconductor wafer cleaning system according to the present invention will be described in detail by reference to the accompanying drawings.

圖 系統C 1至圖11係用於說明依據本發明的半導體晶圓清洗 之圖例。更明確地說’圖1係依據本發明相關於- 13 1305658 半導體晶圓清洗系統c的夂%丨加八 n 的各別部分之配置結構與在同一平 面相連接之周邊裝置例如 』如拋先模組P和晶圓接收模組F的 概略視圖。圖2係一初步、生冰# ,λ 月洗站1 0的主結構之立體圖, 其糟由應用於依據本發明之法 赏月之凊冼系統C的去離子水之水簾 式噴灑器1 8,以去除較夫私工 々子。圖3係沿著表示於圖2當 中之ΙΙΙ-ΙΠ剖面線的橫立丨丨而園 ^ ^ ' °J面圖。圖4係應用於依據本發明 的 >月洗糸統C之濕潤刷子丄、^ 十2 1所組成的第一清洗站2〇和第 二清洗站40的主結構之立辦同 ^ 弋立體圖。圖5係表示應用於第一 >月洗站20和第二清洗站4 ϋ的刷子21中的去離子水之流 動結構的垂直剖面圖。圖6 #执 一、 你叹置於第一清洗站20和第 二清洗站40之間用於執杆笛 钒仃弟一清洗站20的清洗程序之後 的沖洗程序和用於改變晶圓1循、、,一 艾日日圓1傳达方向的第一沖洗站3〇 之主要結構的立體圖。圖7 到圖9係依序地說明由第一沖 洗站30對晶圓丨所執行 丁的轉向和傳送原理之概略上視圖 和概略側視圖。圖1〇係在由 社由第一清洗站40執行清洗程序 之後接著進行沖洗程序的第_ J弟一冲洗站50的主要結構之立 體圖。圖1 1係使用應用於太恭 本發月之離心力的乾燥站6 0之 主要結構的立體圖。 典型地,如圖1所示,一、生、土么 ,±The drawings C1 through 11 are for illustrating a legend of semiconductor wafer cleaning in accordance with the present invention. More specifically, FIG. 1 is related to the configuration of the respective parts of the semiconductor wafer cleaning system c, which are connected to the same plane, for example, in accordance with the present invention. A schematic view of the module P and the wafer receiving module F. Figure 2 is a perspective view of the main structure of a preliminary, raw ice #, λ month wash station 10, which is applied to the deionized water curtain sprayer 1 applied to the system of the moon according to the present invention. 8, to remove the scorpion. Figure 3 is a cross-sectional view of the ΙΙΙ-ΙΠ section line shown in Figure 2, and the ^ ^ ' °J surface view. Figure 4 is a perspective view of the main structure of the first cleaning station 2〇 and the second cleaning station 40 which are applied to the wet scrubbing brush 丄, 十 2 依据 依据 according to the present invention. . Fig. 5 is a vertical sectional view showing the flow structure of deionized water applied to the brush 21 of the first > month washing station 20 and the second washing station 4; Figure 6 #一一, you sigh between the first cleaning station 20 and the second cleaning station 40 for the rinsing procedure after the cleaning procedure of the vanadium vanadium cleaning station 20 and for changing the wafer 1 , ,, a perspective view of the main structure of the first washing station 3 in the direction of the Ai yen. Fig. 7 through Fig. 9 are schematic top and side views, respectively, illustrating the principle of steering and transfer performed by the first cleaning station 30 on the wafer cassette. Fig. 1 is a perspective view showing the main structure of a rinsing station 50 of the _J-th washing station which is followed by a rinsing process by the first cleaning station 40. Fig. 1 is a perspective view showing the main structure of a drying station 60 which is applied to the centrifugal force of the moon. Typically, as shown in Figure 1, one, raw, soil, ±

,月洗系統(清洗器模組)C 係設置在一拋光模組p和_晶圓 曰曰圓接收楔組(設備前端模組) F之間,用於精細拋光晶圓1 m ^ 個以上之CMP機具設置 在抛光棋組P當中,而晶圓技你, W接收楱組f則用於堆疊多數晶 圓1和接收它們。 設置在拋光模組P當中的县 田甲的疋一個以上的裝載裝置3, 14 •工305658 方、將即將被拋光晶圓丨移送(裝載)至每一 CMp機具 =平口 2上面或將已拋光晶圓丨從平台2移送(卸載)至 隨後清洗系統C。-機械臂5相關於裝載裝置3而設置, :亥:械臂5係用於在從裝載裝置3抓取晶目丨之後,將該 等曰曰圓1傳送至清洗系統c的—初步清洗站⑺,或者在由 另一機械臂(未顯示)從晶圓接收模F之機匣級台4上 抓取晶圓1之後’將晶圓1傳送至裝載裝置3。The monthly washing system (washer module) C is disposed between a polishing module p and a wafer rounding receiving wedge group (device front end module) F for fine polishing of more than 1 m wafers. The CMP machine is set in the polished chess set P, and the wafer technology is used to stack the majority of the wafers 1 and receive them. More than one loading device 3, 14 305658 square, placed in the polishing module P, will transfer (load) the wafer to be polished to each CMp machine = flat 2 or will be polished The wafer cassette is transferred (unloaded) from the platform 2 to the subsequent cleaning system C. - the robot arm 5 is arranged in relation to the loading device 3, the::arm 5 is used to transfer the round 1 to the cleaning system c after the picking of the crystals from the loading device 3 - the preliminary cleaning station (7), or transfer the wafer 1 to the loading device 3 after the wafer 1 is grabbed from the upper stage 4 of the wafer receiving mold F by another mechanical arm (not shown).

依據本發明的半導體晶圓清洗系統C係包括:-初步 清洗站1G,其藉由將去離子水㈣於晶圓ι上面,預先清 :晶圓1上的較大的粒子;-第-清洗站20,其首先藉著 厚擦力之使用’旋轉—斜血am 1 t,、日日圓1之月丨j表面和後表面接觸 :刷子21 ’然後,噴灑化學品於晶圓1上面,以清洗剩餘 =粒子…第-沖洗站3G,其藉著將清洗液喷在已第一 -人清洗之晶圓表面,以進行沖爷 . 延仃冲洗私序,一第二清洗站40, 八使用與第一清洗站相同之δ士堪知古斗、μ 』之、·、。構和方式,精由噴灑化學品 在,第二次清洗晶K i之前後表面上的殘餘粒子;一第二 沖洗站50 ’其將清洗液喷 貰灑在被第一久清洗的晶圓1表面 上’以進行沖洗;和,—妒碑4 ^ ,,^ Β 乾知站60,其以高速旋轉已被沖 洗之晶圓1,利用戶斤產i % Μ、、+ 生的離心力,乾燥剩餘的清洗液。 藉由穿過各別工作址 之間的隔離壁之各別輸送帶(如 圖6和圖10所示之輪这 輪迗帶7〇)的設置,依據本發明的各 別工作站之間的晶圓傳送被執行。 如圖2和圖3所示, 能的裝置:使用四個導引 該初步清洗站10係一具有下述功 滾輪16抓握和旋轉晶圓1,和使 15 .1305658 用設置在晶圓1上方 生的水簾狀高壓去謂器(爾刀)18所產 的嗔、! 本 麗去除粒子,藉著去離子水 除的初步清洗程序。 執仃…上較大粒子之移 該去離子水嘴灑器(卿刀m 初步清洗“的一側辟之… 门下地“在 .側土之上。用於從外側供應之去離子 7 i、應孔1 8a係形成於去離 高壓去離子水從去離…: 的一側表面。當 攸去離子水供應孔18a被供應時, 透過長孔狀的噴灑孔以k键也+ 方雕于水 的H /… 錢,絲子推向晶圓1 、、,、‘ 纟,稭著具高壓水簾式噴灑的使用,得到一去 除粒子的取大效盈。在若干其他的實施例當中,可在噴灑 化予。口之後’利用去離子水嘴麗_丄8,進行一沖洗年。序 及在利用去離子水執行初步清洗程序之前,進行^學反 應0 藉著將晶圓1四周邊緣保持在導引滚輪16之凹槽裡頭 的緊密貼合狀態’每個導引滾輪16被設計以旋轉晶^ ^。 當晶圓二被送入或送出初步清洗站1〇時,導引滾輪“能 以一小寬度上下移動’使得晶圓1不為各別導弓丨滾輪16 所干擾。也就是說,在適當位置具有穿透孔的支擇平板1 1 係垂直且固定地設置在初步清洗# 1〇的一側。沪著垂直 方向,一上升和下降導引轨冑⑴係一體形成於:平 11的一外側…上升和下降平板13與該上升和下降3 執道m相結合’沿著該上升和下降導引軌道"a,該上 升和下降平板13可作上升和下降運動。一壓缸12係垂直 16 1305658 地固定在支樓平板11的底部上面,且該上升和下降平板13 的末知處的下端係一體地連接於壓紅12的-活塞桿12a 上’藉此’驅動該壓缸12,則該上升和下降平板i3可被 下~用於套接各別導引滾輪16之滾輪轴i6a的一 ^成1 7之末端係透過一穿孔—體地固定於上升和下降 :板13’藉此,該等滾輪16具有隨著上升和下降平板η ::上升和下降的功能。此處,一具有開啟功 的頂部相結合以供維護之用。該等滚輪轴W被 從動輪】。俜各二π 可旋轉地支撐。滑輪 4料Μ在滾糾…上面,並且被設計 更由—皮帶15b接合。-馬…固定在上升和 輪广側’形成於馬達14軸一末端處的驅動滑 二面、於諸導引滾輪16的其中之-滾輪16的滾輪 -μ研l4a旋轉時,每個導引滾輪16亦同時地旋轉。 下降=if發明被構成,使得當壓缸12操作時,上升和 上2板13'機殼17、每個導引滾輪Μ和馬達14 一齊 上升和下降。 月 包括所示’該第-清洗站2。係為-裝置,其 -對刷子21 旋轉晶圓1之一側緣的導引滾輪23、 將與晶圓化學品喷麗器、26,藉著摩擦式地旋轉 經由獨立,置二接觸而設置之刷子21,以及藉著 一次、、主^化予品噴壤器26噴灑化學品,作為用於第 ,月洗剩餘粒子的主要清洗程序。 弟 17 ‘1305658 如圖4和圓 ς從- gp 圆所不,刷子21係由濕潤海綿所製成,亦 P ’在多孔性PVA外丰品u , h b 口 r录面上,形成無數細微接觸突起21a。 力者”日日B 1㊉表面直接接觸之旋轉運動的物理作用 刷子21執^•中型粒子和小型粒子的刷洗作用。另外, 移二:固定方向旋轉,使得晶圓1具有朝導引滚輪23 子、^ ’並且’朗子21之結構被設計成,使得刷 1之間的間隙可被調整。另外,該刷子21具有一中空 圓筒造型,同時,穿過_ "中工部分,一刷軸22可被插進 刷子21虽中。刷麵* 的兩鸲係可旋轉地裝設在初始清洗 站10的兩側壁之上。 ;I、應去離子水的一流道22a係形 成方;刷軸22的内部,同時, 夺用於嘴射去離子水的複數孔22b 係以刷軸22内壁之徑向來 ,ώ .. έ0 ^ 门來形成,所以,去離子水可經過 bu_道2 2 a朝刷子21來祖虛η 應及經過孔22b來喷射。此處,當 刷子21無動作時,錄 刷子21之去離子水的供應可被當 作用於使刷子2 1處於谪a邮 田 、 地万、適虽濕潤狀態的機制。 如初步清洗站之導^丨、、奋认, 滾輪1 6的結構(參閱圖3 )所示, 每/導引滾輪23具有一揸拉& .^ 〇 連接、,,。構,其中,套接在機殼25 裡的滚輪軸23a將與樞軸24 έ士人 稍24結合,用以藉由一 示)帶動-滾輪。每—導引b用乂籍"帶(未顯 能,該阻擋器支撐晶圓丨 徭《的功 、 邊緣’因應由刷子21絲鐘 所造成晶圓1的向前移動。 —機制·ιτΒ卜 此外,用於帶動滾輪的樞軸24 .n 农輪23以固定角度左右(戋側 向)迴轉,以便不為晶圓丨 (次側 圓1的移動所干擾到0 另外’该化學品噴溻哭曰丄 麗益26具有一中空圓筒形狀,且一 38 1305658 用於供應化學品的流道26a形 喷灑喷嘴爲則形成於喷1||26 2内部。複數個 喷灑器20以對稱於a @ λ 表面之上。化學品 了蚺於曰曰圓的兩側表面之 同時,如® 6所示 Ί又置。 °亥第一沖洗站30藉著在曰圓^ μ 面嘴灑清洗液(例*,去離子水等 ·:在上 圓 且s亥弟一沖洗站30同時是一萸w_ 晶圓i朝輸送帶70移動方白往〜置1包括:用於將 主+ ㈣方W讀送之輪送帶70和-對The semiconductor wafer cleaning system C according to the present invention comprises: - a preliminary cleaning station 1G, which pre-clears: larger particles on the wafer 1 by deionizing water (four) on the wafer 1; Station 20, which first uses the use of thick rubbing 'rotation - oblique blood am 1 t, the surface of the Japanese yen 1 and the back surface contact: brush 21 ' and then sprays chemicals on the wafer 1 to Cleaning Remaining = Particles... No. - Flushing station 3G, which is used to spray the cleaning liquid on the surface of the wafer that has been cleaned by the first person to perform the operation. The second cleaning station 40, eight uses The same as the first cleaning station, the δ 士 knows the ancient fighting, μ 』, ··. And the method of finely spraying the chemicals on the surface of the surface after the second cleaning of the crystal Ki; a second washing station 50' which sprays the cleaning liquid on the wafer 1 which is first cleaned for a long time. On the surface, 'to perform rinsing; and, 妒 4 4 ^ , , ^ Β 知 知 60, which rotates the wafer 1 that has been washed at a high speed, and the user can produce i% 、, +, raw centrifugal force, dry The remaining cleaning solution. The crystal between the respective workstations according to the present invention by the arrangement of the respective conveyor belts (the wheels of the wheel rim 7 shown in Figures 6 and 10) passing through the partition walls between the respective work sites A circular transfer is performed. As shown in FIG. 2 and FIG. 3, the device capable of: using four guides, the preliminary cleaning station 10 has a work roller 16 for grasping and rotating the wafer 1, and the 15.1305658 for setting the wafer 1 The sputum produced by the 18-year-old water curtain high-pressure deducer (Ear) 18! Benli removes the particles and removes the preliminary cleaning procedure by deionized water. Stubborn... move the larger particles on the deionized water sprinkler (the side of the initial cleaning of the knife) (under the door) "on the side of the soil. For the deionization supplied from the outside 7 i, The hole 1 8a is formed on the side surface away from the high-pressure deionized water from the ...: when the deionized ion water supply hole 18a is supplied, the k-hole is also etched through the long hole-shaped spray hole. Water H /... Money, silk pushed to the wafer 1 , , , , ' 纟, straw with high-pressure water curtain spray, get a great effect of removing particles. In several other embodiments, After the spray is applied to the mouth, 'use the deionized water nozzle _ 丄 8 to perform a rinsing year. Before the preliminary cleaning procedure using deionized water, the reaction is performed 0 by the edge of the wafer 1 The intimate state of the head held in the groove of the guide roller 16 'each guide roller 16 is designed to rotate the crystal ^ ^. When the wafer 2 is fed or sent out of the preliminary cleaning station 1 , the guide roller " Can move up and down with a small width' so that wafer 1 does not interfere with the individual guide rollers 16 It is said that the supporting plate 1 1 having a penetrating hole at an appropriate position is vertically and fixedly disposed on the side of the preliminary cleaning #1〇. In the vertical direction of the Shanghai, a rising and falling guiding rail (1) is integrally formed at: An outer side of the flat 11 ... the rising and falling flat plate 13 is combined with the ascending and descending 3 obstruction m ' along the rising and falling guiding track "a, the rising and falling flat plate 13 can be used for ascending and descending movements. The cylinder 12 is fixed vertically on the bottom of the slab 11 of the slab 11 and the lower end of the raised and lowered slab 13 is integrally connected to the piston rod 12a of the embossing 12 In the pressure cylinder 12, the rising and lowering plate i3 can be fixed to the ascending and descending body through a perforation end by the end of the roller shaft i6a for arranging the respective guide rollers 16 : Plate 13' By this, the rollers 16 have the function of ascending and descending the plate η :: ascending and descending. Here, a top having an opening work is combined for maintenance. The roller axes W are The driven wheel]. Each of the two π is rotatably supported. Rolling correction...above, and designed to be joined by the belt 15b. - The horse is fixed on the rising side and the wide side of the wheel 'the driving sliding surface formed at one end of the shaft of the motor 14 and among the guiding rollers 16 - When the roller-μ grinding l4a of the roller 16 rotates, each of the guide rollers 16 also rotates at the same time. Falling = if the invention is constructed such that when the cylinder 12 is operated, the upper and lower plates 13' of the casing 17 are each The guide roller Μ and the motor 14 rise and fall together. The month includes the 'the first cleaning station 2' is a device, which - the guide roller 23 that rotates the side edge of one of the wafers 1 to the brush 21, will The wafer chemical sprayer 26, by frictionally rotating the brush 21 disposed through the independent, two-contact, and spraying the chemical by one time, the main product, the sprayer 26 is used for First, the main cleaning procedure for washing the remaining particles in the month. Brother 17 '1305658 As shown in Figure 4 and the round ς from the - gp circle, the brush 21 is made of a moist sponge, and also P 'in the porous PVA outside the u, hb mouth r recording surface, forming numerous fine contacts Protrusion 21a. The physical role of the rotating movement of the surface of the B1 ten surface of the day is the brushing effect of the medium-sized particles and the small particles. In addition, the movement is two: the rotation in the fixed direction, so that the wafer 1 has the guide roller 23 , ^ 'and the structure of the Langzi 21 is designed such that the gap between the brushes 1 can be adjusted. In addition, the brush 21 has a hollow cylinder shape, while passing through the _ " middle work part, a brush shaft 22 can be inserted into the brush 21. Although the two sides of the brush surface * are rotatably mounted on the two side walls of the initial cleaning station 10; I, the main channel 22a of the deionized water is formed; the brush shaft At the same time, at the same time, the plurality of holes 22b for the mouth to spray the deionized water are formed by the radial direction of the inner wall of the brush shaft 22, ώ.. έ0 ^ gate is formed, so the deionized water can pass through the bu_ channel 2 2 a The virgin η is sprayed toward the brush 21 and through the hole 22b. Here, when the brush 21 is inactive, the supply of the deionized water of the recording brush 21 can be regarded as being used to place the brush 2 1 in the 邮a post field, the ground The mechanism of the wet state, such as the guidance of the preliminary cleaning station, and the recognition, As shown in the structure of the roller 16 (see Fig. 3), each/guide roller 23 has a pull-and-pull connection, wherein the roller shaft 23a that is sleeved in the casing 25 will be Pivot 24 gentleman is slightly combined 24 to drive the roller by one. Each guide b uses the & &" belt (not shown, the blocker supports the wafer 丨徭 "work, edge 'According to the forward movement of the wafer 1 caused by the brush 21 wire clock. - Mechanism · ιτΒ Bu In addition, the pivot for driving the roller 24.n The agricultural wheel 23 is rotated at a fixed angle (戋 lateral) so as not to For the wafer crucible (the movement of the secondary side circle 1 interferes with 0. In addition, the chemical squirting has a hollow cylindrical shape, and a 38 1305658 is used to supply the chemical flow path 26a. The sprinkler nozzle is formed inside the spray 1||26 2 . The plurality of sprinklers 20 are symmetric on the surface of a @ λ. The chemical is applied to both sides of the rounded surface, as shown by the ® 6 °H. The first washing station 30 at the first time, by sprinkling the cleaning solution on the mouth of the round ^ μ surface (example *, deionized water, etc.: in the upper circle and s Haidi one Wash station 30 is at the same time a wafer i dogwood w_ belt 70 toward the moving direction of the white is set to - 1 comprising: (iv) + for main feed direction W of the reading wheel 70 and the conveyor belt - on

清洗液喷灑器3 7。 TWashing liquid sprayer 3 7. T

該輸送帶70包括:輸送帶滑輪71、7u,其等以盆兩 側具有-預設間隙平行地配置;—輸送帶皮帶Μ,其連接 在兩輸送帶滑輪71、71a之間;和,輸送帶托架73,其等 用於支撐輸送帶滑輪71、71a。此處,輸送帶滑輪川在 結構上與另一輪送帶滑輪71略有不同。然而,其間的此 等差異僅是簡單的設計改變:亦即,輸送帶滑輪7la具有 兩分開之短區段結構,以便防止因轉向所引起之干擾或與 後面將詳述裝置之間的相互干擾。 在結構上’清洗液噴灑器37與上述第一清洗站2〇之 化學品噴灑器26並無所不同。亦即,清洗液喷灑器37具 有一中空圓筒形狀,且一用於供應清洗液的流道37a形成 於中空部分裡頭,另一方面,複數個噴灑喷嘴37b形成於 ~外表面之上。 此外,除了第一沖洗站30的結構之外,本發明額外地 包括一轉向和傳送滾輪裝置(RAT :直角轉換),在將晶 圓輸入第一沖洗站30並進行沖洗程序之後,當晶圓1進 19 1305658 槿At β ’先#王序¥ ’該轉向和傳送滚輪裝置(RAT)的結 構能改變晶圓的務叙 多動方向90度。藉著此裝置,習知技術 頭:別工作站的平行配置方式被改變為L形配置,且因 月ti以和例如式描本指 τ ^ 式拋先模组Ρ和晶圓接納模組F等之各別 乍站與周邊裝置能連接 & 滚輪裝置能提供一構η 傳 更為緊凑,並將整體單元的佔有μ之效以大化。 装十也就是說,該轉向和傳送滚輪裝置(RAT)係-種結構, 其中:為某種線糾;$ ^ * (例如,初步清洗站10裡的上升 和下降裝置等)所上升和 的开 Φ古AA + _L- 卜降的上升和下降平板33係以 互平^2 ^置複數個滾輪托架32係以固定間隙相 上· ^ /垂直地固定於上升和下降平板33的一側壁 即二:數個轉向和傳送滾輪31係以-方式來設置, :寺轉向和傳送滚輪31各別地被裝設於滾輪托架32的 ,=使得轉向和傳送滾輪31的兩端在上升和下降平 個轉二側壁和滾輪托架32的—端之間係可轉動的。每 二專:和傳送滚輪3"系以無任何干擾的方 廷可70的輸送帶滑輪7U之間。 隹h 因此,在與上升和下降卓& u t μ + 生任何干擾的产、只下絲 升和下降移動不發 間上井; 月/下’轉向和傳送滾輪31在輸送帶7〇之 使用韓>^下降在下文當中,藉著隨附圖式的依序參考, 1更用轉向和傳送裝署;鱼s 說明之。 Τ日曰圓1之轉向和傳送的原理將被 首先’如圖7的平面葙圇沉_ _ 見圖所不,在第一清洗站20完成 20 .1305658 清洗程序的晶圓〗進第一 在輸送帶7。的輸送帶皮帶2當時晶圓〗仍放置 器^喷、B去離 上面,然後糟著清洗液喷灑 j去離子水執行沖洗程序 '然後,如圖8的側視 圖^,當上升和下降平板%上升時,放置在輸送帶Μ 輸迓帶皮帶72下方的轉向和傳送滾輪31在輸送帶% 之間上升至略高於輸送帶皮帶72的位置,因此,放置在 W π皮帶72上的晶圓!被往上舉。在此狀況下,如圖9The conveyor belt 70 includes: conveyor belt pulleys 71, 7u, which are arranged in parallel with a preset gap on both sides of the basin; a conveyor belt belt Μ connected between the two belt pulleys 71, 71a; A belt holder 73, which is used to support the belt pulleys 71, 71a. Here, the belt pulley is structurally slightly different from the other belt pulley 71. However, the difference between them is only a simple design change: that is, the belt pulley 7la has two separate short section structures in order to prevent interference caused by steering or mutual interference with the device which will be described in detail later. . Structurally, the cleaning liquid sprayer 37 is not different from the chemical sprayer 26 of the first cleaning station 2 described above. That is, the cleaning liquid sprayer 37 has a hollow cylindrical shape, and a flow path 37a for supplying the cleaning liquid is formed in the hollow portion, and on the other hand, a plurality of spray nozzles 37b are formed on the outer surface. Further, in addition to the structure of the first rinsing station 30, the present invention additionally includes a steering and transporting roller device (RAT: right angle conversion), after the wafer is input into the first rinsing station 30 and subjected to a rinsing process, when the wafer 1 into 19 1305658 槿At β 'First #王序¥ 'The structure of the steering and transfer roller device (RAT) can change the reciprocal motion direction of the wafer by 90 degrees. With this device, the conventional technology head: the parallel configuration of the workstation is changed to the L-shaped configuration, and the monthly ti is, for example, the τ ^ type throwing module 晶圆 and the wafer receiving module F, etc. Each of the stations can be connected to the peripheral device. The roller device can provide a compact structure and make the overall unit occupancy μ larger. That is to say, the steering and transport roller device (RAT) is a structure in which: for a certain line correction; $ ^ * (for example, ascending and descending devices in the preliminary cleaning station 10, etc.) The opening and lowering of the Φ ancient AA + _L-b drop plate 33 is set to be mutually flat ^ 2 ^ a plurality of roller brackets 32 are fixed on the fixed gap phase · ^ / vertically fixed to one side wall of the ascending and descending plate 33 That is, two steering and conveying rollers 31 are arranged in a manner of: the temple turning and conveying rollers 31 are separately mounted to the roller bracket 32, so that both ends of the steering and conveying rollers 31 are raised and The lowering of the two side walls and the end of the roller bracket 32 are rotatable. Each of the two specials: and the transfer roller 3" is between the conveyor belt pulley 7U without any interference.隹h Therefore, in the production of any disturbance with the rise and fall of Zhuo & ut μ +, only the lower wire lift and the lower movement do not send the well; the month / lower 'steer and the transfer roller 31 in the conveyor belt 7 使用 use Han >^ Drop in the following, by reference to the drawings in the order, 1 more use of steering and transmission of the assembly; fish s explain. The principle of the steering and transmission of the next day will be firstly as shown in the plane of Figure 7 _ _ see the picture, at the first cleaning station 20 complete the wafer of the 20.1305658 cleaning program into the first Conveyor belt 7. Conveyor belt 2 at the time the wafer is still placed in the sprayer, B goes off the top, then the bad cleaning solution sprays j deionized water to perform the flushing procedure' then, as shown in Figure 8 side view ^, when the rise and fall flat When the % rises, the steering and conveying roller 31 placed under the belt belt 72 of the conveyor belt rises between the belts % to a position slightly higher than the belt belt 72 of the belt, and therefore, the crystal placed on the W π belt 72 circle! Was lifted up. In this situation, as shown in Figure 9.

的平面視圖所示,當轉向和傳送滚輪31以一向前傳送方 向轉動牯,放置在轉向和傳送滾輪3丨上的晶圓丨之移動 方向作9G度的改'變’然後’晶圓1進人第二清洗站40。 同時’藉著可能與第一清洗站2〇當中所使用之化學品 相同或不同化學品的第二次噴灑,該第二清洗站4()係一 用於將晶圓1的前表面和後表面上之剩餘粒子清洗掉的裝 置°第二清洗站40所具有的結構和方法與第一清洗站20 相同(參考圖4和圖5),所以,其詳細的說明在此省略, 同時’在第一清洗站和第二清洗站2〇、40兩者當中相同 的元件將設定相同的元件符號。 此外,如圖1 〇所示,藉著將清洗液(例如,去離子水 等)喷灑在已第二次清洗晶圓1上,第二沖洗站50進行 最後的沖洗。該第二沖洗站5〇係一裝置,其包括:用於 傳送晶圓1的輸送帶7〇 ;和,設置在晶圓1上方的清洗液 噴灑器5 1,其用於將去離子水噴灑至晶圓1表面。參考號 瑪5 1 b標示一噴灑噴嘴,同時,一超音波裝置(百萬音速 的)可選擇性地被追加裝設在第二沖洗站50上面,使得 21 1305658 S玄超音波操作能同東 最後之清洗效益/清洗程序’藉此,更顯著地強化 由於第二、;φ、、杰各μ h + ^ ΒΒ ΛΑ ^ 對晶圓1獨立且充分的沖洗,所以 本發明的沖洗程庠 益,在本發明t中,^技術的沖洗程序執行的更有效 當中被同時執於沖洗程序在-隨後的乾燥站60 M u更顯著效益可被期待,以縮短乾燥 站的程序時間,栽 孔你 延遲現象的-主要因素序時間是目前造成整個清洗程序 先浐撂?日1間’如圖11所示,該乾燥站(SRD :旋轉沖 洗乾燥)以高速旌Μ風Μ 乂刊wr 最後的清洗液,例Γ::洗…’並且以離心力乾燥 其包括-用於抓握晶圓二:乾燥站60是-裝置, 置。 圓1並以兩速旋轉之的指狀件抓握裝 邊螓廿:抓握裝置係一裝置,其以等距離抓握晶圓1的 =以南速旋轉之。在該指狀件抓握裝置當中,一中: 凝轉軸65係向上延伸,1〜 、 Η專輸的動力所旋轉。在^ 底部的驅動裝置66所 ……轉轴的外圓周之等距的五個切口。摔作桿“ 分別以徑向穿過五個切口往外突出, 知门作才于64 能沿著五切口上下銘叙4t “ “具有相同距離且 來件懸臂62以一垂直的方式 ^置母一心狀件懸臂62藉由一錢鍵銷⑷ 動時,每m 而相連接,使得當每一操作桿64移 曰 懸臂62與每一操作桿64相結合。在扣 〕頁# ’抓握指狀件61係各別地與指狀件懸 22 I3〇5658 ? -體形成,每一抓握指狀件6i具有一能夠套接晶圓 之邊緣的凹槽。一連接元件係設置在 鏈銷64a和抓握指妝杜糾々„ ’ 62之敍 I握&狀件61之間。在該連接元件裡頭,一中 、轴銷63係連接於'當裝載時用於支推晶圓1的坐板, 且係作用為—樞軸,以便執行指狀件縣臂62 $ t 4 件6!之間的相對擺動。彳件“ 62和抓握指狀 指狀件Μ具有與人類指頭相類似操作的結構, :=狀件以等間隙伸張之後,就能像人類指一 叙抓握住圓板的邊緣。 上的^ = 4上所述的指狀件抓握裝置之結構,I載在坐板 的曰曰圓!可為五個抓握指狀件61所牢牢地抓握住,因 在’當中央轉軸65旋轉時,彼等係可同時旋轉a 卸載時’操作桿64藉由一機械操控朝中央轉轴65田二曰中間 =收縮’藉此拉動指狀件懸臂62的底部,所以抓握指 6丨的頂部繞著作為—樞點之中央軸銷〇作徑向擴 伸,並將晶圓!釋放開。當抓握晶圓i時,相逆於上述之 刼作被執行’因此’抓握的詳細說明在此處省略。 此外’該五個抓握指狀件61係以等距沿著一外 配置,所以’抓握指狀件61之間的距離維持72度。尤置 是,雖然-扁平區域型態晶圓i不需任何對準操作地㈣ 置’但是超過⑽度的216度之涵蓋,使得至少四個有效 爪握㈣# 61抓握晶圓1的圓周,藉此保持-穩定的抓 星“。此具體化裝置的穩定性顯著地優於習知技術的不 穩定狀況,在習知技術裡,四個抓握指狀件被使用,所以, 23 1305658 當無任何對準操作將一扁平區域型態晶圓輸入時,僅有至 少三個有效抓握指狀件以涵蓋180度的範圍抓握晶圓i的 圓周。 咖岡训、似、'、口傅以艮馬五抓握指狀件型 心6〗不官晶圓1擺入方向為何,當晶圓以高速旋轉時, 都不會造成晶圓破損的保證下,本發明所具體化的穩定結 構皆能保持一固定的抓握狀態。 、精於此項技術的人士應可容易地瞭解到:依據一扁平 區域型態晶圓或-切口型態晶圓,該抓握指狀件61的數 >目可㈣同之設計。也就是說,針對—扇平區域型態晶圓, 5亥抓握指狀件型離i, 斟-切… 握指狀件61結構’或者針 而不Γ心晶圓’則可為一三或四指狀件^結構。秋 :二:晶圓】的型態為何,上述兩種抓 ’皆 ::晶圓中心對準的額外對準操作下送人和何 使用-五抓握指狀件結構係較佳的。操作日曰圓1’ 另:’視需要狀況而定,在乾燥站 包括一用於在執行—乾 1 了另外 氣)及執扞㈤β A钇知釭序之則,噴灑去離子水(或氮 孔)及執Μ麵沖洗程序之 、飞虱 在此一實施例當中去離子水和氮氣噴灑器。 J田中,在噴灑去離子 同時以-低速旋轉指狀件抓握裝w y 洗程序, 以-高速旋轉指狀件抓握装置,、之後’嘴遽氮氣,同時 能,同時,藉著⑽⑷氧㈣改善乾燥性 表面作抗氧化處理。 虱的反應,可對晶圓1的 24 .1305658 雖然本發明係依據圖式中所表示之具體實施例之參考 來作說明,但是其應該當作一種說明來詮釋,而非是二種 限制作用。因此,精於該項技術之人士應明瞭:在不偏離 本發明之範疇内,各種修飾和等效具體實施例可被構思出 來。因此,藉著後附之申請專利範圍,本發明的寬度和範 疇可被界定出來。 & 工業上的應用 藉著分離和獨立之一清洗站和一沖洗站的設置,以進 行已作表面拋光晶圓的一清洗和沖洗程序,本發明的晶圓 清洗系統能將晶圓進入每一清洗站所需的等候時間最小 化,藉此,由於晶圓製造整體程序的此延遲現象之二決了 使得晶圓的生產率被顯著地改良。 【圖式簡單說明】 圖1係依據本發明相關於一半導體晶圓清洗系統的各 別部分之配置結構與在同—平面相連接之周邊裝置例如抛 光模組和晶圓接收模組的概略視圖。 圖2係藉由應用於依據本發明之清洗系統的去離子水 之水簾式噴灑器以去除較大粒子的初步清洗站的 立體圖。 、口得< —圖3係表示沿著圖2當中之】謂剖面線所作的橫剖As shown in the plan view, when the steering and conveying rollers 31 are rotated in a forward conveying direction, the moving direction of the wafer cassette placed on the steering and conveying rollers 3 is changed to 9 G degrees and then the wafer 1 is inserted. The person second cleaning station 40. At the same time, the second cleaning station 4 () is used to transfer the front surface and the back of the wafer 1 by a second spraying which may be the same as or different from the chemical used in the first cleaning station. The device for cleaning the remaining particles on the surface. The second cleaning station 40 has the same structure and method as the first cleaning station 20 (refer to Figs. 4 and 5), so the detailed description thereof is omitted here, and The same elements of the first cleaning station and the second cleaning station 2, 40 will be provided with the same component symbols. Further, as shown in Fig. 1, the second rinsing station 50 performs the final rinsing by spraying the cleaning liquid (e.g., deionized water or the like) on the second cleaning wafer 1. The second processing station 5 is a device comprising: a conveyor belt 7 for conveying the wafer 1; and a cleaning liquid sprayer 5 1 disposed above the wafer 1 for spraying the deionized water To the surface of wafer 1. Reference numeral 5 1 b indicates a spray nozzle, and at the same time, an ultrasonic device (million speed of sound) can be selectively installed on the second flushing station 50, so that the 21 1305658 S mysterious ultrasonic operation can be the same The final cleaning benefit/cleaning procedure 'by this, more significantly enhances the independent and sufficient rinsing of the wafer 1 by the second, φ, 杰, μ h + ^ ΒΒ ΛΑ ^, so the rinsing process of the present invention benefits In the present invention, the more efficient execution of the rinsing program of the technique is simultaneously performed in the rinsing process at the subsequent drying station 60 M u more significant benefits can be expected to shorten the program time of the drying station, planting holes, delaying phenomenon The main factor of the sequence time is currently causing the entire cleaning process first? Day 1 'As shown in Figure 11, the drying station (SRD: Rotary Flush Drying) is hurricane wr wr 最后 final cleaning solution, for example: washing...' and drying it by centrifugal force Grab wafer 2: Drying station 60 is a device. The finger 1 is gripped by a finger that rotates at two speeds. The gripping device is a device that grips the wafer 1 at an equal distance and rotates at a south speed. Among the finger gripping devices, one of the: the condensing shaft 65 is extended upward, and the power of the 1~, Η special transmission is rotated. The drive unit 66 at the bottom of the ... is the five incisions of the outer circumference of the shaft. The throwing rods are respectively protruded outward through the five incisions in the radial direction, and the door can be inscribed on the upper and lower sides of the five incisions. 4t" "The same distance and the cantilever 62 can be placed in a vertical manner. The member cantilever 62 is connected every m when the money key pin (4) is moved, so that when each of the operating levers 64 moves the cantilever 62 to be combined with each of the operating levers 64. On the buckle] page #'grip finger The members 61 are individually formed with a finger suspension 22 I3 〇 5658 - body, each of the grip fingers 6 i having a groove capable of staking the edge of the wafer. A connecting member is disposed on the chain pin 64a And the grip finger makeup Du 々 々 „ '62 叙 叙 I grip & In the connecting element, a middle and a shaft pin 63 are connected to the 'seat plate for pushing the wafer 1 when loading, and function as a pivot to execute the finger county arm 62 $ t 4 pieces The relative swing between 6! The element "62" and the gripping finger finger Μ have a structure similar to that of the human finger, and the := member can be grasped by the human finger after grasping the edge of the circular plate. ^ = 4 The structure of the finger gripping device described above, I is carried in the rounded corner of the seat plate! It can be firmly gripped by the five gripping fingers 61, because in the 'central shaft' When 65 is rotated, they can rotate at the same time. When unloading, the 'operating rod 64 is pulled toward the center shaft 65 by a mechanical control. The bottom of the finger cantilever 62, thereby pulling the bottom of the finger cantilever 62, so the grip finger 6 The top of the crucible is wound around the central axis pin of the pivot point for radial expansion, and the wafer! is released. When the wafer i is gripped, it is executed against the above-mentioned operation. The detailed description is omitted here. Furthermore, the five gripping fingers 61 are arranged equidistantly along an outer configuration, so the distance between the gripping fingers 61 is maintained at 72 degrees. - Flat area type wafer i does not require any alignment operation (4), but exceeds 216 degrees of (10) degrees, making at least four effective (Iv) # 61 grip grip circumference of the wafer 1, thereby keeping - stable grip stars. " The stability of this embodiment is significantly better than the instability of the prior art. In the prior art, four gripping fingers are used, so 23 1305658 will have a flat area type without any alignment operation. When the wafer is input, there are only at least three effective grip fingers to cover the circumference of the wafer i in a range of 180 degrees. Kaogang training, like, ', mouth Fu with the five horses to grasp the finger shape heart 6〗 The direction of the wafer 1 is not in the direction of the wafer, when the wafer is rotated at high speed, will not cause wafer damage guarantee In the following, the stabilizing structure embodied by the present invention can maintain a fixed grip state. Those skilled in the art should readily appreciate that the number of grip fingers 61 can be designed in accordance with a flat area wafer or a slit type wafer. That is to say, for the fan-flat area type wafer, the 5-Hail grip finger type is away from i, 斟-cut... The grip finger 61 structure 'or the needle is not the heart-shaped wafer' can be one or three Or four fingers ^ structure. Autumn: 2: Wafer] The type of the above two types of pick-ups: the additional alignment operation of the wafer center alignment and the use of the five-grip finger structure is preferred. Operation day round 1' Another: 'Depending on the condition, including one for drying in the drying station and one for the other, and spraying the deionized water (or nitrogen) The pores and the rinsing process of the sputum are in the deionized water and nitrogen sparger in this embodiment. In J Tianzhong, while spraying deionization, the wy-washing procedure is carried out with a low-speed rotating finger gripping device, and the finger gripping device is rotated at a high speed, and then the mouth is smashed with nitrogen gas, and at the same time, by (10) (4) oxygen (four) Improve the dry surface for anti-oxidation treatment. The reaction of ruthenium can be applied to the wafer 1 of 24.1305658. Although the invention is described with reference to the specific embodiments shown in the drawings, it should be construed as a description rather than as a limitation. . Therefore, it is apparent to those skilled in the art that various modifications and equivalent embodiments can be conceived without departing from the scope of the invention. Thus, the breadth and scope of the invention may be defined by the scope of the appended claims. & Industrial Applications The wafer cleaning system of the present invention can pass wafers into each of the cleaning and rinsing procedures of the surface-polished wafer by means of separate and independent cleaning stations and a processing station. The waiting time required for a cleaning station is minimized, whereby the productivity of the wafer is significantly improved due to this delay in the overall wafer fabrication process. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a configuration of a respective portion of a semiconductor wafer cleaning system in accordance with the present invention, and peripheral devices such as a polishing module and a wafer receiving module connected in the same plane. . Figure 2 is a perspective view of a preliminary cleaning station for removing large particles by a water curtain sprayer applied to a deionized water of a cleaning system in accordance with the present invention. , 口口<- Figure 3 shows the cross section along the section line in Figure 2

4係應用於依據本發明的m統之濕潤刷子所組 -清洗站和第二清洗站的主結構之立體圖。 5係表示應用於第一冑洗站和帛^青洗站的刷子當 25 ,l3〇5658 中的去離子水之流動結構的垂直剖面圖。 用於執行 變晶圓傳 ^圖6係設置於第一清洗站和第二清洗站之間 第—清洗站的清洗程序之後的沖洗程序和用於改 送方向的第一沖洗站之主要結構的立體圖。 圖7係表示由第一清洗站清洗之後被輸送帶送入第一 冲洗站内部的晶圓之狀況的概略上視圖。4 is a perspective view of the main structure of the cleaning station and the second cleaning station which are applied to the wet brush according to the present invention. The 5 series shows a vertical sectional view of the flow structure of the deionized water in the brush of 25, l3〇5658 applied to the first washing station and the 青^qing washing station. For performing the wafer transfer, FIG. 6 is a rinsing process after the cleaning process of the first cleaning station disposed between the first cleaning station and the second cleaning station, and a main structure of the first rinsing station for redirecting the direction Stereo picture. Fig. 7 is a schematic top view showing the state of the wafer fed into the first processing station by the conveyor belt after being cleaned by the first cleaning station.

圖8係表示藉由輪送帶之間的轉向和傳送滾輪之上升 而將—晶圓從輸送帶往上升起時的狀況之概略側視"圖。 圖9係表示當轉向和傳送滾輪轉動時位於轉向和傳送 滾輪上之晶圓以改變方向的方式被送入第二清洗站的狀況 之概略上視圖。 圖10係在由第二清洗站執行清洗程序之後接著進行沖 洗程序的第二沖洗站的主要結構之立體圖。 圖11係使用應用於本發明之離心力的乾燥站之主要結 構的立體圖。 【主要元件符號說明】 c 半導體晶圓清洗系統(清洗器模組) P 拋光模組 F 晶圓接 RAT 轉向和 SRD 乾燥站 1 晶_圓 收模組(設備前末端模組) 傳送滾輪裝置(直角轉換) (旋轉沖洗乾燥) 2 平台 3 裝載裝置 26 1305658Fig. 8 is a schematic side view showing a state in which the wafer is lifted from the conveyor belt by the steering between the belts and the rise of the conveying roller. Figure 9 is a schematic top view showing a state in which the wafers on the steering and transport rollers are fed to the second cleaning station in a direction change direction when the steering and transport rollers are rotated. Fig. 10 is a perspective view showing the main structure of a second flushing station which is followed by a flushing process after the cleaning process is executed by the second washing station. Figure 11 is a perspective view showing the main structure of a drying station applied to the centrifugal force of the present invention. [Main component symbol description] c Semiconductor wafer cleaning system (cleaner module) P polishing module F wafer RAT steering and SRD drying station 1 crystal _ round module (device front end module) transfer roller device ( Right angle conversion) (rotary rinse drying) 2 platform 3 loading device 26 1305658

4 機匣級台 5 機械臂 10 初步清洗站 11 支撐平板 1 la 上升和下降導引軌道 12 壓缸 12a 活塞桿 13 上升和下降平板 14 馬達 14a 驅動滑輪 15a 皮帶 15b 皮帶 16 導引滚輪 16a 滾輪抽 16b 滑輪從動輪 16c 滑輪從動輪 16d 轴承 17 機殼 17a 蓋子 18 去離子水喷灑器(DIW刀) 18a 去離子水供應孔 20 第一清洗站 2 1 刷子 21a 細微接觸突起 27 13056584 Machine stage 5 Robot arm 10 Preliminary cleaning station 11 Support plate 1 la Ascending and descending guide track 12 Cylinder 12a Piston rod 13 Ascending and descending plate 14 Motor 14a Drive pulley 15a Belt 15b Belt 16 Guide roller 16a Roller 16b Pulley driven wheel 16c Pulley driven wheel 16d Bearing 17 Housing 17a Cover 18 Deionized water sprayer (DIW knife) 18a Deionized water supply hole 20 First cleaning station 2 1 Brush 21a Fine contact protrusion 27 1305658

22 刷軸 22a 流道 22b 23 導引滚輪 23a 滾輪軸 24 枢軸 25 機殼 26 化學品喷灑器 26a 流道 26b 噴灑噴嘴 30 第一沖洗站 31 轉向和傳送滾輪 32 滾輪托架 33 上升和下降平板 37 清洗液喷灑器 37a 流道 37b 喷灑喷嘴 40 苐二清洗站 50 第二沖洗站 51 清洗液喷灑器 51b 喷灑喷嘴 60 乾燥站 61 抓握指狀件 62 指狀件懸臂 28 1305658 63 中央軸銷 64 操作桿 64a 鉸鏈銷 65 中央旋轉軸 66 驅動裝置 70 輸送帶 71、71a 輸送帶滑輪 72 輸送帶皮帶 73 輸送帶托架22 Brush shaft 22a Flow path 22b 23 Guide roller 23a Roller shaft 24 Pivot 25 Housing 26 Chemical sprinkler 26a Flow path 26b Spray nozzle 30 First washing station 31 Steering and conveying roller 32 Roller bracket 33 Rising and lowering plate 37 Cleaning liquid sprayer 37a Flow path 37b Spray nozzle 40 Second cleaning station 50 Second washing station 51 Cleaning liquid sprayer 51b Spray nozzle 60 Drying station 61 Grip finger 62 Finger cantilever 28 1305658 63 Center pin 64 Operating lever 64a Hinge pin 65 Central rotating shaft 66 Drive unit 70 Conveyor belt 71, 71a Conveyor belt pulley 72 Conveyor belt belt 73 Conveyor belt bracket

2929

Claims (1)

.1305658 十、申請專利範圍: 1. 一種半導體晶圓清洗系統,其包括: 初步巧洗站,其用於藉由將去離子水噴灑於一晶圓 上面’預先清除晶圓上的粒子; 一第一清洗站,其用於藉由摩擦式地旋轉一對配置成 與晶圓之前表面和後表面接觸的刷子,及藉由一獨立設置 之化學品喷mu喷灑化學品於晶圓上面n次清洗剩 餘的粒子; 一第一沖洗站,其用於藉由將清洗液噴灑於在第一清 洗站上已被第-次清洗之晶JD的表面’以進行沖洗程序; 一第二清洗站,其使用與第一清洗站相同之結構和方 式,用於藉由一獨立設置之化學品喷灌器,將化學品喷灑 於在第-沖洗站已被第-次沖洗清洗之晶圓的表面,以便 第二次清洗殘留在晶圓之前表面及後表面上的粒子; 一第二沖洗站,其用於將清洗液喷灑於在第二清洗站 已被第二次清洗之晶圓的表面上,以便進行沖洗程序;和, 一乾燥站,其以高速旋轉在第二沖洗站已被沖洗之晶 圓’利用所產生的離心力,乾燥殘留的清洗液。 2.如申請專利範圍第丨項所述之半導體晶圓清洗系 統,其中,該第一沖洗站更包括一轉向與傳送裝置,其用 於藉由將該已第一次清洗之晶圓相對於進入第一沖洗站之 方向作90度的變化,改變已第一次清洗之晶圓進入下一 個程序的移動方向,並將該已第一次清洗之晶圓送入該下 一個程序中。 30 1305658 3.如申請專利範圍第2項所述之半導體晶圓清洗系 統,其中,該轉向和傳送裝置包括:一上升和下降平板, 其係垂直地設置’並由一特定線性運動裝置所上升和下 IV,複數個滾輪拖架,係以固定間隙相互平行的方式垂直 地固定於上升和下降平板的一側壁上’且係裝設在輸送帶 之間’用於在滾輪拖架和傳送帶之間無干擾的情況下,自 月〗耘序傳送该晶圓;和,複數個轉向和傳送滾輪,其等 以方式破支撐,亦即,轉向和傳送滾輪係分別地設置在 滾輪拖架的内側,使得轉向和傳送滾輪的兩端可在上升和 下降平板之一側壁和滾輪拖架的一端之間滾動。 4Hf專利範圍帛1項所述之半導體晶圓清洗系 j ’其中’該初步清洗站包括:一晶圓抓握和旋轉裝置; 去離子水噴灑器’其設置在晶圓的上方,主要作用 在於當進給高壓去離 ^ 濃 ㈣—水簾狀去離子水的噴 视 除去大的粒子.甘 /、中,该日日圓抓握和旋轉裝置包括: 沿方:該支擇平板當中,-上升和下降導引軌道 /口 f 垂直方向形成. π道 战,一上升和下降平板,J1盥上升和下 物軌道相結合,以便 二上:和下 -壓紅,其作垂直伸贤… 降¥引軌道所導引; 下降平板.…收細’以便上升和下降該上升和 牛十板,和,歿數個導引滾輪, 所同時轉動,以便旋链、j 、寺被一或多個驅動源 疋轉被抓握的晶圓,本 時,該等導引滾$ α @ 田载入或釋放晶圓 板 起上升和下 丨艰糕將隨著上升和下降平 降,以便不與晶圓發生干擾。 5 ·如申請專利箣 圍弟1項所述之半導體晶圓清洗系 31 1305658 統,其中’該第一清洗站和第二清洗站分別包括:一對刷 子’其等藉由與晶圓兩表面的接觸,清洗該晶圓,該等刷 子係由有濕潤處理作用之濕海綿所製成,其係依賴當刷子 無動作時,僅透過-供應去離子水之流道被供應去離子 ^和’-化學品噴麗器,該噴渡器對稱地朝晶圓的兩側 表面被裝設,並且能僅讓化學品通過及噴灑化學品。 如申請專利範圍第i項所述之半導體晶圓 ^其中’該乾燥站包括:一中央旋轉軸,該轴向上延伸, =-設置在該軸底部之驅動裝置所傳送的動力所旋轉; 切口’其等於縱向上以等距沿著中央旋轉軸 周,形成在中央旋轉轴的頂部;操作桿, = 上、以相同距離及能沿著切D上下 J於授向 過五個切口;指狀件懸臂,其等以 凸出並穿 由-鉸鏈銷’每一指狀件懸臂以可旋轉的::被叹置’藉 桿的-端結合’使得當每一操作桿移動時,操作 臂能與每一操作桿結合;抓握指狀件,*母一指狀件懸 懸臂一體形成,在指狀件懸臂的頂部,2等分別與指狀件 有一溝槽,該溝槽能套接一晶圓之邊每—抓握指狀件具 設置在指狀件懸臂之鉸鏈銷的一頂邙、 連接元件,其 和,一在連接元件裡頭的中央軸銷,2抓取指狀件之間; 於一坐板用於支撐晶圓,並作用為〜虽負載時,該銷連接 懸臂和抓握指狀件之間的—相對擺動柘輛,以執行指狀件 ^一、圖式·· 如次頁。 32.1305658 X. Patent Application Range: 1. A semiconductor wafer cleaning system comprising: a preliminary cleaning station for pre-clearing particles on a wafer by spraying deionized water on a wafer; a first cleaning station for frictionally rotating a pair of brushes configured to be in contact with the front and back surfaces of the wafer, and spraying the chemical onto the wafer by a separate chemical spray Cleaning the remaining particles; a first rinsing station for spraying the surface of the crystal JD that has been subjected to the first cleaning on the first cleaning station to perform a rinsing process; a second cleaning station Using the same structure and manner as the first cleaning station for spraying chemicals onto the surface of the wafer that has been first rinsed at the first flushing station by a separately disposed chemical sprinkler To clean the particles remaining on the front and back surfaces of the wafer a second time; a second processing station for spraying the cleaning liquid onto the surface of the wafer that has been cleaned a second time at the second cleaning station On, in order to carry out the flushing procedure And, a drying station, which rotates at high speed has been rinsed in the rinsing station of the second crystal circle 'generated by the centrifugal force, drying of the residual cleaning liquid. 2. The semiconductor wafer cleaning system of claim 2, wherein the first processing station further comprises a turning and conveying device for comparing the wafer that has been cleaned for the first time A 90 degree change is made in the direction of entering the first flushing station, changing the moving direction of the wafer that has been cleaned for the first time into the next program, and feeding the wafer that has been cleaned for the first time into the next program. The semiconductor wafer cleaning system of claim 2, wherein the steering and conveying device comprises: a rising and falling plate that is vertically disposed 'and raised by a specific linear motion device And the lower IV, a plurality of roller carriages are vertically fixed to one side wall of the ascending and descending plates in a manner that the fixed gaps are parallel to each other and are installed between the conveyor belts for use in the roller carriages and the conveyor belts. In the case of no interference, the wafer is transferred from the month; and, a plurality of steering and conveying rollers are supported in such a manner that the steering and conveying rollers are respectively disposed inside the roller carriage So that both ends of the steering and conveying rollers can roll between one of the side walls of the ascending and descending plates and one end of the roller carriage. 4Hf Patent Range 帛1 The semiconductor wafer cleaning system j 'where the preliminary cleaning station includes: a wafer gripping and rotating device; the deionized water sprayer' is disposed above the wafer, the main function is When the feed high pressure is removed from the concentrated (four)-water curtain-like deionized water, the large particles are removed. The Japanese yen grasping and rotating device includes: along the side: the selection plate, - rise And the descending guide track / mouth f is formed in the vertical direction. π road warfare, a rising and falling flat plate, J1 盥 rising and the lower object track are combined, so that the two upper: and the lower-pressing red, which is made vertically vertical... Guided by the guide rail; lowering the flat plate....receiving the 'to increase and decrease the rise and the tenth plate, and, a plurality of guide rollers, rotating at the same time, so that the zigzag, j, and the temple are driven by one or more driving sources Twisting the wafer being gripped, at this time, the guide rolls $α @田Load or release the wafer board from the rise and the squat cake will rise and fall flattened so as not to occur with the wafer interference. 5) The semiconductor wafer cleaning system 31 1305658, as described in the patent application, wherein the first cleaning station and the second cleaning station respectively comprise: a pair of brushes respectively; Contacting, cleaning the wafer, the brushes are made of a wet sponge that has a wetting effect, which relies on the flow of deionized water and only through the channel supplying the deionized water when the brush is inactive. - A chemical sprayer that is symmetrically mounted toward both sides of the wafer and that allows only chemicals to pass and spray chemicals. The semiconductor wafer of claim i wherein the drying station comprises: a central rotating shaft extending axially, = rotating by a power transmitted by a driving device disposed at a bottom of the shaft; 'It is equal to the longitudinal direction of the circumference of the central axis of rotation, formed at the top of the central axis of rotation; the operating lever, = up, at the same distance and can be cut along the cutting line D in the direction of the five incisions; a cantilever that is embossed and threaded by a - hinge pin 'each finger cantilevered to be rotatable:: sighed by the 'lever-end of the lever' so that when each lever moves, the arm can In combination with each of the operating rods; the gripping fingers, the female-finger-like suspension arms are integrally formed, and at the top of the finger cantilever, the two respectively have a groove with the finger, and the groove can be sleeved The edge of the wafer each gripping finger has a top cymbal, connecting element disposed on the hinge pin of the finger cantilever, and a central pin of the head in the connecting element, 2 between the gripping fingers ; a plate is used to support the wafer, and acts as a ~ when the load is loaded, the pin is connected The relative swing between the cantilever and the gripping finger is performed to perform the fingering, the pattern, and the like. 32
TW94114099A 2005-05-02 2005-05-02 Semiconductor wafer cleaning system TWI305658B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109227359A (en) * 2018-10-19 2019-01-18 清华大学 The post-processing unit of chemical-mechanical polishing system and method, wafer
TWI728368B (en) * 2018-05-24 2021-05-21 台灣積體電路製造股份有限公司 Method and system of preventing wafer from metal ion contamination

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728368B (en) * 2018-05-24 2021-05-21 台灣積體電路製造股份有限公司 Method and system of preventing wafer from metal ion contamination
CN109227359A (en) * 2018-10-19 2019-01-18 清华大学 The post-processing unit of chemical-mechanical polishing system and method, wafer

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