TWI305278B - - Google Patents

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TWI305278B
TWI305278B TW95141710A TW95141710A TWI305278B TW I305278 B TWI305278 B TW I305278B TW 95141710 A TW95141710 A TW 95141710A TW 95141710 A TW95141710 A TW 95141710A TW I305278 B TWI305278 B TW I305278B
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photoresist
diffraction grating
metal
substrate
plane
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TW95141710A
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TW200821633A (en
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Wei Ching Chuang
Kun Yi Lee
Jia-Lun Chen
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Univ Nat Formosa
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【305278 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種繞射光柵元件模仁及光柵元件之製造方法,尤 指-種結合全像干涉微影技術與電鑄加工技術,而製成金屬模仁,並 •使該金屬模仁可應用在微熱壓成形技術及軟式印刷之複製成形技術而 •大量製作具有較佳深寬比且特性穩定的繞射光柵元件者。 【先前技術】 # 由於奈料學制光學元件之發展日_異,各界對於繞射光柵 學讀的需求與品㈣要求亦相當重視,繞射光栅元件廣泛應用於波 …長遽波器、感測器與光學量測技術上。繞射光柵元件的製作方法上不 、外乎利用全像術干涉微影、電子束寫入與雷射寫入。光纖元件架構中 的繞射光栅部份普遍是利用雷射直接寫入及電子束寫入之方法製作, 如尚密度多工分波器(Dense WavelengthDivisi〇n仙出加咖)與光 •波長補辱多工器(0ptlcal Add/Dr〇p _ίρ1_,_)。杯明 中是以全像術干涉微影方式製作繞射光柵,此方法製作光拇直優點 為,光栅週期最小可達雷射波長之半波長,可準確的控制光拇週期, 製作大範圍光栅,且成本較低Q而傳統利用電子束寫入之光拇技術, -方面由於目誠紐展枝向^學树麵化發展,亦即會將 元件整合於微小晶片令,因而利用:射直接寫入及電子束寫入的方法製 作光通訊元件之繞射光栅便會產生許多待克服的問題,尤其成本产主 且光柵週期製作上有較大的誤差,雷射寫入部份,由於受限於光^ 小問題,所以無法製作小週期的件,以及树結構材料感光性 1305278 與否及材料相容性等問題。 本發财配合麵魅_,結合絲顺,麵鑄模技術,以 及微成形模造量產技術。製程是以LIGA的缺點進行改良,其製程使用 不同於同步 X光騎行光義,要替代光觀有紫外光微影,準 分子雷射微加工及反應離子蝕刻等適用於製作微米左右尺寸的成品, 優點是相較於LIGA製程其光源成本較低,空間較小,但相較下其精密 度就變差,在於本發明中光源是以氦鎘雷射(He-CdUser)替代同步輻 ®射X光製作繞射光柵。 一般應用全像術干涉微影技術製作光柵元件,普遍是直接將實驗 上所需的光栅直接感光於元件上,作為該元件的架構之一,無法以同 ' · 一光柵元件重複使用。本發明利用全像術干涉微影技術與LIGA-like 技術之電鍍鑄模方式將繞射光柵元件製作為金屬模仁,可重複使用此 金屬模仁來大量翻製光栅元件。 參考文獻 ® l)A.Sharon, D. Rosenblatt, and A.A. Friesem, Appl. Phys. Lett. 69, 4154(1996) 2) L. Eldada, S. Yin, C. Poga, C. Glass, R. Blomquist, and R.A. Norwood, IEEE Photonics Technol. Lett. 10, 1416(1998) 3) Nishihara, Η., Y. Handa, T. Suhara, and J. Koyama, Electron-beam directly written micro gratings for integrated optical circuits, Proc. SPIE, 239:134, 1980. 【發明内容】 6 1305278 本务明之第-目的,在提供—種製造用來翻製繞射光栅之金屬模 4的方法。其係包括有(a)準備基板;(b)將光阻均勻地分散塗佈在該 土板面上,(C)將已設計好的光柵圖案感光在該光阻上;(d)在該光 阻具有光柵_的表面鍍上—層具導電性的第-金屬層,使該光阻表 面-有導電性,(e)將已具有該光阻賴基板置於麟槽内進行電禱加 工,使該第一金屬層相反於該光阻的另面上沉積第二金屬層,直至該 第二金屬層具有—適當厚度再停止輯加I;⑴將絲板自該光阻上 脫除;(g)再以光阻去除液將該光阻溶解去除;(h)取出餘下的即為繞 射光栅金屬模仁,而完成該繞射光柵金屬模仁之製造。 本發明之第二目的,在提供一種利用上述所製成的金屬模仁,來 大里翻製具雜佳深寬比且特性穩㈣繞射光栅元件。其係將上述本 發明的金屬模仁應用在微熱壓成型與軟性印刷技術上,即採用高分子 聚合體如聚曱基丙烯酸曱酯(PMMA)或聚二甲基矽氧烷 (Polydimethylsiloxance,PDMS)等材料,再配合配合微熱壓成形技術 或軟式印刷(Non-photolithographic)之複製成形(Replica M〇lding, REM)技術來大量複製繞射光柵元件。 本發明之第三目的’在提供-種光栅的深寬比大於丨的繞射光拇 元件。例如當本發明所設計的繞射光柵之週期為〇 5//1〇時,其所製成 繞射光栅元件的光柵深度可達〇.4"m以上,光柵結構的深寬比可達χ 以上。 【實施方式】 請參看圖一至圖三所示,本發明用以製造繞射光柵元件 1305278 (Diffraction grating)之模仁的製造方法’其方法技術的基本特徵, 係包括有下列步驟: (a) 準備基板(20); (b) 將光阻(21)均勻地分散塗佈在該基板(2〇) 一面上; (c) 將已設計好的光栅(25)圖案感光在該光阻(21)上; (d) 在该光阻(21)具有光栅(25)圖案的表面鍍上一層具導電性的 第一金屬(22)層,使該光阻(21)表面具有導電性; . (e)將已具有s亥光阻(21)的該基板(2〇)置於電鑄槽内進行電鑄加 工’使该第一金屬(22)層相反於該光阻(21)的另面上沉積第二金屬⑵) 層,直至s亥第二金屬(23)層具有一適當厚度再停止電鑄加工; ' (〇將該基板(20)自該光阻(21)上脫除; (g)再以光阻去除液將該光阻(21)溶解去除; ⑹取出餘下的即為繞射光栅金屬模仁(24),而完成該繞射光拇金 屬模仁(24)之製造。 . 本發明具體實施例,可分為下列幾個部份來做詳細說明。 (A)繞射光柵圖案的設計: 本發明係以全像術干涉微料統架構來配合製作繞·拇圖案, 其光學系絲構請參看圖-所示。在此實施例中所·的光源⑽為 氦锡雷射(He-Cd Laser),波長為325nm,功率為,。魏將雷射光 束經由分光鏡(11)後分成^束光強度相同的平面波,並使該兩平面波 分別經由二反射鏡⑽⑽後交會於—干涉平面(⑷上,此時在此平 面⑽上由糾絲的平面波產生干涉娜錢射光拇圖 案。兩束平 8 1305278 .平面之角度分別為,根據光學全像干涉原理可精確 '週^於t射干涉平面⑽之角度與繞射光柵之週期關係,光柵的 週期如方程式T=A/2sin0...... ........⑴ 其中方程式(1)中的T是光栅週期,λ是電射光的波長,Θ是雷射 光入射干涉平面的人㈣。因全像術干涉微影架射利用—旋轉微位 移器(15)改變人射絲平面龍的人射肢,進—步精確的控制繞射 先柵之週期,所以在光學干涉架構上可利用旋轉微位移器⑽之調整 而得出各個製造上所需的繞射光栅週期。例如,若㈣皮調整卿.%。, 其週期Τ就等於0. 5//m。 (B)繞射光柵圖案的轉移: 本發明具體實施例,是採用黃光微影技術,其流程請配合參看圖 二,在本發明的具體實施例中是以玻璃作為基板⑽,將其裁切成h X lcm的規格,先利用超音波震洗機對該玻璃基板(2〇)清洗以去除其表 面上的雜質,而後再利用旋轉塗佈機(spinc〇ati呢)將光阻 (Photo-resister)(2l)均勻地分散塗佈在玻璃基板(2〇),其中,旋轉 的條件疋以2500〜3500rpm(本實施例為3000rpm)連續旋轉15〜25(本實 施例為20秒),且光阻的厚度約0.45/im,再將基板(20)置入一般烤箱 中以80〜10t (本實施例為9〇。〇連續100〜140秒(本實施例為12〇秒)的 條件做第一次烘烤,藉以將光阻上過量的溶劑移除。再將基板置於一 夾具上做曝光’即置放在上述全像術干涉微影系統的兩束光的平面波 的干涉平面(14)上(請配合參看圖一所示),啟動已預設好可產生 所需之光柵圖案的全像術干涉微影系統,該全像術干涉微影系統的雷 9 1305278 射光束乃產生兩束平面波’並投射在置放在該干涉平面(14)上的基板 (20)上之光阻(21),進而將已調整好預設的光柵圖案感光於光阻(21) 上,當光阻(21)感光後,其光阻(21)表面便產生與設計上相同的繞射 光柵(25)圖案。完成後又將基板置入烤箱中以1i2〇°C(本實施例為 ll〇°C)連續100〜140秒(本實施例為12〇秒)的條件再做一次烘烤。再將 基板置入顯像劑中25〜35秒(本實施例為3〇秒)後,即可在光阻上產生繞 射光柵,圖四所示是以光學顯微鏡所觀察到光阻(21)上已產生有繞射 光栅(25)的結果。其中,當曝光時間為3分鐘時,其光柵週期為〇 5 的光栅深度是〇.4#m,而光柵週期為〇. 7//m的光栅深度是〇 45“ m。顯然,以本發明的製作技術,可以很容易地獲得具有大深寬比的光 栅,也因此本發明所製成的光栅具有很優異的繞射光柵效能。 請參看圖四所示,其顯示以AFM來量測光阻之光柵形態的結果。當 所设计的光柵週期為〇.5#m,而且曝光時間為2 5分鐘時,以AFM量測 的結果顯示其光柵週期為〇· 5//m,光栅财是33()ηι^而且,當所設計 的光栅週期為〇. ,而且曝光時間為3分鐘時,以通量測的結果顯 示/、光柵週期為〇. 703/zm ’光柵深度是452nm。從以上的量測結果,確 σ、驗e以本發明的製作技術,可以很精確地控制繞射光柵的縱 橫比。 (C)製造繞射光栅讀之模仁的成型: 本發明具體實關巾,細電鑄技術製造模仁,其製作流程請參 看圖三所示。由於在光阻甫感光有繞射光柵圖案時仍為不導電之材 1305278 料所以為了後績電鑄成形得以實行,在本具體中實施例是以高週波 麟的方式,而在光阻具有繞射光_該面上麵—層鎳金屬以做為 第-金屬(22)層’使該光阻⑻具有繞射光栅的表層具有導電性,接 著將基板⑽連同雜⑻及第—金屬(22)層置於電鑄财,並使第 金屬(22)層與陰極連接,並於電鑄射陽極連接做為第二金屬(23) 的鎳金屬’使賴槽_行氧化還原作用,氧化還原的原理,使 陽極的鎳金屬離付L積於連接在陰極的第—金屬(22)層而形成第二金 屬(23)層’直至第二金屬(23)層達到適當厚度再停止電鑄。再將基板 (20)自光阻(21)上脫除’並以光阻去除液丙_配合超音波震洗機使 其光阻(21)層溶解去除,再取出餘下的繞射光樹金屬模仁⑽,即完 成金屬模仁(24)的製造。 本發明繞射光栅圖案主要是以原子力顯微鏡(At〇mic F〇rce Microscope,AFM)與掃瞄式電子顯微鏡(Scanning Electr〇n[305278 IX. Description of the Invention: [Technical Field] The present invention relates to a method for manufacturing a diffraction grating element mold and a grating element, and more particularly to a combined holographic interference lithography technique and an electroforming processing technique. The metal mold core is made, and the metal mold core can be applied to the micro-hot press forming technology and the flexible printing copy forming technology. A large number of diffraction grating elements having a good aspect ratio and stable characteristics can be produced. [Prior Art] # Due to the development of the optical components of the nanomaterials, the requirements of the diffraction grating learning and the requirements of the products (4) are also highly valued. The diffraction grating components are widely used in wave...long chopper, sensing And optical measurement technology. The method of fabricating the diffraction grating element is not to use holographic interference lithography, electron beam writing and laser writing. The diffraction grating part of the fiber component structure is generally fabricated by laser direct writing and electron beam writing, such as Dense Wavelength Divisi, and light wavelength humiliation. Multiplexer (0ptlcal Add/Dr〇p _ίρ1_, _). In the cup Mingzhong, the diffraction grating is made by holographic interference lithography. The advantage of this method is that the grating period is at least half the wavelength of the laser wavelength, which can accurately control the light thumb period and make a large range of gratings. And the cost is lower than Q and the traditional use of electron beam writing light thumb technology, - in view of the development of the eyes of the new school, the integration of components into the micro-chip order, and thus: direct use The method of writing and electron beam writing to fabricate the diffraction grating of the optical communication component will cause many problems to be overcome, especially the cost of the owner and the grating period has a large error in the fabrication of the laser. Limited to the problem of light, so it is impossible to make small-cycle pieces, and the sensitivity of the tree structure material 1305278 or material compatibility. This wealthy face with the charm _, combined with silk straight, surface mold technology, and micro-molding molding mass production technology. The process is improved by the disadvantages of LIGA. The process is different from the synchronous X-ray riding light, and it is suitable to replace the optical view with ultraviolet lithography, excimer laser micro-machining and reactive ion etching, etc., which are suitable for the production of micron-sized products. The advantage is that compared with the LIGA process, the light source has lower cost and less space, but the precision is worse than that of the LIGA process. In the present invention, the light source is replaced by a helium-cadmium laser (He-CdUser). The light is made into a diffraction grating. Generally, the lithography component is fabricated by using holographic interference lithography technology. Generally, the grating required for the experiment is directly directly sensitized to the component. As one of the components of the component, it cannot be reused with the same grating component. The invention utilizes the holographic interference lithography technology and the LIGA-like technology to form the diffraction grating element into a metal mold core, and the metal mold core can be repeatedly used to reproduce the grating element in a large amount. References® l) A. Sharon, D. Rosenblatt, and AA Friesem, Appl. Phys. Lett. 69, 4154 (1996) 2) L. Eldada, S. Yin, C. Poga, C. Glass, R. Blomquist , and RA Norwood, IEEE Photonics Technol. Lett. 10, 1416 (1998) 3) Nishihara, Η., Y. Handa, T. Suhara, and J. Koyama, Electron-beam directly written micro gratings for integrated optical circuits, Proc SPIE, 239: 134, 1980. [Draft] 6 1305278 The first object of the present invention is to provide a method for manufacturing a metal mold 4 for converting a diffraction grating. The system includes (a) preparing a substrate; (b) uniformly dispersing the photoresist on the surface of the earth plate, (C) sensing the designed grating pattern on the photoresist; (d) The photoresist has a surface of the grating _ plated with a conductive first metal layer to make the surface of the photoresist conductive - (e) the substrate having the photoresist is placed in the ridge groove for the electric prayer processing Depositing a second metal layer on the other side of the photoresist opposite to the photoresist until the second metal layer has a suitable thickness and then stopping the addition of I; (1) removing the silk plate from the photoresist; (g) further removing the photoresist by a photoresist removal liquid; (h) taking out the remaining metal foil of the diffraction grating to complete the fabrication of the diffraction grating metal mold. A second object of the present invention is to provide a diffraction grating element having a hybrid aspect ratio and a stable characteristic (4) by using the metal mold core produced as described above. The above-mentioned metal mold core of the present invention is applied to micro hot press forming and soft printing technology, that is, a polymer such as polyacrylic acid methacrylate (PMMA) or polydimethylsiloxane (PDMS) is used. The materials are mixed with the micro-hot press forming technology or the non-photolithographic Replica M〇lding (REM) technology to reproduce the diffraction grating elements in large quantities. A third object of the present invention is to provide a diffractive optical element having an aspect ratio greater than that of 丨. For example, when the period of the diffraction grating designed by the present invention is 〇5//1〇, the grating depth of the diffraction grating element formed can reach 〇.4"m or more, and the aspect ratio of the grating structure can reach χ. the above. [Embodiment] Referring to FIG. 1 to FIG. 3, the basic features of the method for manufacturing the mold of the diffraction grating element 1305278 (Diffraction grating) include the following steps: (a) Preparing the substrate (20); (b) uniformly dispersing the photoresist (21) on one side of the substrate (2); (c) sensing the designed grating (25) pattern to the photoresist (21) (d) plating a layer of a conductive first metal (22) on the surface of the photoresist (21) having a grating (25) pattern to make the surface of the photoresist (21) electrically conductive; e) placing the substrate (2〇) having the photoresist (21) in an electroforming bath for electroforming [making the first metal (22) layer opposite to the other side of the photoresist (21) Depositing a second metal (2) layer thereon until the second metal (23) layer of shai has a suitable thickness and then stopping the electroforming process; '(the substrate (20) is removed from the photoresist (21); g) further removing the photoresist (21) by photoresist removal liquid; (6) taking out the remaining diffraction grating metal mold core (24), and completing the manufacture of the diffraction light thumb metal mold core (24). The invention has The embodiment can be divided into the following parts for detailed description. (A) Design of the diffraction grating pattern: The invention adopts the holographic interference micro-material structure to cooperate with the fabrication of the circular pattern, the optical filament Referring to the figure - the light source (10) in this embodiment is a He-Cd laser with a wavelength of 325 nm and a power of. After the laser beam passes through the beam splitter (11) The plane waves are divided into the same beam intensity, and the two plane waves are respectively passed through the two mirrors (10) (10) and then intersected on the interference plane ((4). At this time, the plane wave of the tangled lines is generated on the plane (10). The two planes are flat 8 1305278. The plane angles are respectively, according to the principle of optical holographic interference, the periodic relationship between the angle of the interference plane (10) and the diffraction grating can be accurately determined. The period of the grating is as in the equation T=A/2sin0. ..... ........(1) where T in equation (1) is the grating period, λ is the wavelength of the electro-optic light, and Θ is the person incident on the interference plane of the laser light (4). Shadow frame shooting-rotating micro-displacer (15) to change the human body of the human plane flat dragon The step-by-step precise control of the period of the diffraction grating, so the adjustment of the rotating micro-displacer (10) can be used in the optical interference architecture to obtain the diffraction grating period required for each manufacturing. For example, if (four) skin adjustment. The period Τ is equal to 0.5/m. (B) Transfer of the diffraction grating pattern: In the specific embodiment of the present invention, the yellow lithography technique is adopted, and the flow thereof is referred to FIG. 2, and the specific embodiment of the present invention In the embodiment, glass is used as the substrate (10), which is cut into a size of h X lcm. The glass substrate (2〇) is first cleaned by an ultrasonic vibration washer to remove impurities on the surface, and then spin coated. A cloth machine (photo-resister) (2l) was uniformly dispersed and coated on a glass substrate (2 〇), wherein the condition of rotation was continuously performed at 2500 to 3500 rpm (3000 rpm in this embodiment). Rotating 15 to 25 (20 seconds in this embodiment), and the thickness of the photoresist is about 0.45 / im, and then placing the substrate (20) in a general oven at 80 to 10 t (9 in this embodiment). The first baking is carried out for a continuous period of 100 to 140 seconds (12 sec. in this embodiment) to remove excess solvent from the photoresist. Then, the substrate is placed on a fixture for exposure, that is, placed on the interference plane (14) of the plane wave of the two beams of the holographic interference lithography system (please refer to FIG. 1), and the startup is preset. A holographic interferometric lithography system that produces a desired grating pattern that is produced by a Ray ray 9 1305278 beam that produces two plane waves 'and is projected onto the interference plane (14) The photoresist (21) on the substrate (20) further sensitizes the preset grating pattern to the photoresist (21), and when the photoresist (21) is exposed, the surface of the photoresist (21) is generated. The same diffraction grating (25) pattern as the design. After completion, the substrate was placed in an oven and baked again at 1 i 2 ° C (in this example, ll 〇 ° C) for 100 to 140 seconds (12 sec seconds in this example). After the substrate is placed in the developer for 25 to 35 seconds (3 sec. in this embodiment), a diffraction grating can be produced on the photoresist, and the photoresist is observed by an optical microscope in FIG. The result of the diffraction grating (25) has been produced. Wherein, when the exposure time is 3 minutes, the grating depth whose grating period is 〇5 is 〇.4#m, and the grating depth of 光栅. 7//m is 〇45" m. Obviously, according to the present invention The fabrication technique makes it easy to obtain a grating with a large aspect ratio, and therefore the grating produced by the invention has excellent diffraction grating performance. Please refer to FIG. 4, which shows the measurement of light by AFM. The result of the grating shape of the resist. When the designed grating period is 〇.5#m and the exposure time is 25 minutes, the result of AFM measurement shows that the grating period is 〇·5//m. 33() ηι^ Also, when the designed grating period is 〇. and the exposure time is 3 minutes, the result of the flux measurement shows /, the grating period is 〇. 703/zm 'the grating depth is 452 nm. From above The measurement result is confirmed that the aspect ratio of the diffraction grating can be controlled very accurately by the fabrication technique of the present invention. (C) The molding of the mold for manufacturing the diffraction grating is read: The fine electroforming technology is used to manufacture the mold core. The production process is shown in Figure 3. The photoresist 甫 is immersed in the diffraction grating pattern and is still non-conductive material 1305278. Therefore, it is practiced for the post-production electroforming. In this embodiment, the embodiment is in the form of high-frequency lining, and the photoresist has diffracted light _ The surface of the surface - the layer of nickel metal as the first - metal (22) layer 'the photoresist (8) has the surface layer of the diffraction grating is electrically conductive, and then the substrate (10) together with the impurity (8) and the first metal (22) layer In the electroforming, and the metal (22) layer is connected to the cathode, and the electroforming anode is connected to the nickel metal as the second metal (23) to make the redox effect, the principle of redox, The nickel metal of the anode is left L to be accumulated in the first metal (22) layer connected to the cathode to form the second metal (23) layer ' until the second metal (23) layer reaches a suitable thickness and then electroforming is stopped. (20) Remove from the photoresist (21) and remove the liquid with the photoresist _ with the ultrasonic vibration washing machine to dissolve and remove the photoresist (21) layer, and then take out the remaining diffractive light metal mold (10), That is, the manufacture of the metal mold core (24) is completed. The diffraction grating pattern of the present invention is mainly atomic force microscopy. (At〇mic F〇rce Microscope, AFM) and scanning electron microscope (Scanning Electr〇n

Microscope, SEM)量測與觀察;請參看圖二所示,根據原子力顯微鏡 AFM所量測之結果,可得知繞射光柵(25)於光阻(21)上時,本發明已可 精確的控制繞射光栅(25)的深寬比。請參看圖五所示,本發明利用sem 量測繞射光柵金屬模仁(24)之元件表面結構,由數據之結果顯示本發 明已可將繞射光柵元件順利地製作成金屬模仁(24),且精確控制繞射 光柵元件的珠見比,金屬模仁的厚度為1. 55mm,其上的光柵的結構仍 是相當良好。本發明在實試過程中,以AFM和SEM量測的結果中,顯示 光柵週期為0. 703μιη時’光柵深度是448nm ;光栅週期為0. 507#m時, 光栅深度是328nm,此結果幾乎與原始設計的光柵形態相同。 1305278 最後,上述本發明所製成的金屬模仁便可應用在微熱壓成型與軟 性印刷技術上,亦即採用本發明的金屬模仁’並採用高分子聚合體如 聚甲基丙烯酸曱酯(PMMA)或聚二曱基矽氧烷(Polydimethylsil(3xance, PDMS)等材料,再配合微熱壓成形技術或軟式印刷 (Non-photolithographic)之複製成形(Replica M〇lding,腿)技術來 製造成繞射光柵元件,本發明實施例是將稀薄的pDMS撚覆在金屬模仁 上,經保持潮溼而使之硬化,進而使PDMS很容易地自金屬模仁脫離, 即可獲得PMS光栅。同樣地,請配合參看圖四所示,本發明卩廳光拇 橫斷面以AFM和SEM,以及以氦鎘雷射(He_Cd Laser)方式所作的Microscope, SEM) measurement and observation; please refer to Figure 2, according to the results of AFM measurements, the diffraction grating (25) on the photoresist (21), the invention has been accurate The aspect ratio of the diffraction grating (25) is controlled. Referring to FIG. 5, the present invention utilizes sem to measure the surface structure of the component of the diffraction grating metal mold core (24). The results of the data show that the diffraction grating element can be smoothly fabricated into a metal mold core (24). And, precisely controlling the bead ratio of the diffraction grating element, the thickness of the metal mold is 1. 55 mm, and the structure of the grating thereon is still quite good. In the actual test, the results of AFM and SEM measurement show that the grating period is 0. 703μιη, the grating depth is 448nm, and the grating period is 0. 507#m, the grating depth is 328nm, and the result is almost Same as the original design of the grating. 1305278 Finally, the above-mentioned metal mold core made by the present invention can be applied to micro-thermoforming and soft printing technology, that is, using the metal mold core of the present invention, and using a polymer polymer such as polymethyl methacrylate ( PMMA) or Polydimethylsil (3xance, PDMS) and other materials, combined with micro-compression forming technology or non-photolithographic replication forming (Replica M〇lding, leg) technology to create a winding In the embodiment of the present invention, a thin pDMS is coated on a metal mold and hardened by being kept moist, so that the PDMS can be easily detached from the metal mold to obtain a PMS grating. Please refer to FIG. 4, the cross section of the light hall of the present invention is made by AFM and SEM, and by He C Cd Laser.

Raman-Nath繞射實驗來制。從f射光束的繞獅態,其細週期被 計算出來’而且是符合AFM及SEM的量測結果。而且,由圖四與圖五的 量測比較,可明確發現繞射光柵深寬比均可達i以上。由於光阻的感 光時間與繞射光柵的深度有相對應的關係,以繞射光栅週期為〇 為例;當本發明所設計的繞射光柵之週期狀5⑽時,其所製成繞射 光栅元件的光娜度可達〇. 以上,光栅結構的絲比可達工以 上’顯示魏射光柵之繞紐應相#穩定,亦即表示本發明所製得的 繞射光栅金屬模仁可重複使用,且可穩定及大量地生產各式各樣不同 材料的繞射光柵元件。 以上所述,僅為本發明之可行實施例,並非用以限定本發明之專 利Ιϋ圍’舉凡依據下财請專利範騎述之魄、特徵以及其精神而 為之其他變化的實施,f應包含於本㈣之補範圍内。 1305278 - 仏舰本翻㈣體狀於_料利細之技雜徵,未見 於同類触而具_紐,且較f知技術具進步性,並能供產業充份利 用,已符合發明專利要件,爰依法具文提出申請 ’謹請釣局依法核 予專利’以維護本申請人合法之權益。 【圖式簡單說明】 圖-是本發明所採用全像術干涉微影系統架構示意圖; 圖二是本發明黃光微影製程之流程示意圖; •圖三是本發明電禱模仁製程之流程示意圖; 圖四是本發明以原子力顯微鏡AFM觀測光阻上的光柵圖;及 圖五是本發明以掃瞄式電子顯微鏡通觀測模仁上的光橋圖。 【主要元件符號說明】 (10)雷射光源 (14)干涉平面 (21)光阻 • (24)模仁 (11)分光鏡 (15)微位移器 (22)第一金屬 (25)光撕 (12)(13)反射鏡 (20)基板 (23)第二金屬Raman-Nath diffraction experiment. From the lion state of the f-beam, the fine period is calculated' and is consistent with the AFM and SEM measurements. Moreover, from the comparison of the measurement in Fig. 4 and Fig. 5, it can be clearly found that the aspect ratio of the diffraction grating can reach i or more. Since the photosensitive time of the photoresist has a corresponding relationship with the depth of the diffraction grating, the diffraction grating period is taken as an example; when the diffraction grating designed by the present invention has a periodic shape of 5 (10), the diffraction grating is formed. The lightness of the component can reach 〇. Above, the wire ratio of the grating structure can reach more than the above. The display of the diffraction grating is stable, which means that the diffraction grating metal mold obtained by the invention can be repeated. A diffraction grating element of a wide variety of different materials can be used stably and in large quantities. The above description is only a possible embodiment of the present invention, and is not intended to limit the scope of the patent of the present invention, and should be implemented according to the characteristics, characteristics and spirit of the patent application. It is included in the scope of this (4). 1305278 - The 仏 本 本 本 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( , 爰 filed in accordance with the law to apply for 'please ask the fishing bureau to grant patents according to law' to protect the legitimate rights and interests of this applicant. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic view showing the structure of a holographic interferometric lithography system used in the present invention; FIG. 2 is a flow chart showing the process of the yellow lithography process of the present invention; Fig. 4 is a grating diagram of the present invention for observing the photoresist by atomic force microscope AFM; and Fig. 5 is an optical bridge diagram of the present invention for observing the mold core by a scanning electron microscope. [Main component symbol description] (10) Laser light source (14) interference plane (21) photoresist • (24) mold core (11) beam splitter (15) micro-displacer (22) first metal (25) light tear (12) (13) Mirror (20) Substrate (23) Second Metal

Claims (1)

1305278 5、申請專利範圍: 1. -種肋製造繞射光柵元件之模仁財法,包括下列步驟: (a) 準備基板; (b) 將光阻均勻地分散塗佈在該基板一面上; (c) 將已設計好的光柵圖案感光在該光阻上; W)在該光阻具有光柵_的表面鍍上—層具導電性的第—金屬 層’使該光阻表面具有導電性; # ⑹將已具有該光阻的該基板置於電鑄槽内進行電鱗加工,使該第 -金屬層相反於該光阻的另面找積第二金屬層,直至該第二金屬層 具有一適當厚度再停止電鑄加工; -- (f)將該基板自該光阻上脫除; (g)再以光阻去除液將該光阻溶解去除; ⑹取出餘下的即為繞射光柵金屬模仁,而完成該繞射光柵金屬模 仁之製造。 _ 2.如f請專利賴第丨項所述之方法’其中,絲板為玻璃基板。 3. 如申轉利範圍第1項所述之方法’其巾,步驟⑹是侧旋轉塗佈 機將光阻均勻地分散塗佈在基板上。 4. 如申請專利範圍第1項所述之方法,其中,步驟⑹中旋轉塗佈的條 件是以2500〜3500rpm連續旋轉15〜25秒。 5. 如申請專利細第1項所述之方法’其巾,完成步驟⑹後可將基板 置入一般烤箱中以8(M00t連續10〇~14〇秒的條件做第一次烘烤,藉以 將光阻上的溶劑移除。 14 1305278 6. 如申請專利範圍第1項所述之方法,其中,步驟(c)又可包括: (cl)將基板置於一個可供兩道雷射光束之平面波形成干涉的平面 上; (c2)將雷射光束以適當角度入射,經由分光鏡分成兩束光強度相 同的平面波; (c3)使該兩平面波經由反射鏡後交會於該基板所置放的該平面 上;及 . (c4)使該兩平面波因干涉所形成的該繞射光栅圖案感光於該光阻 上。 7. 如申請專利範圍第6項所述之方法,其中,該雷射光是氦鎘雷射光 (He-Cd Laser)。 8. 如申請專利範圍第6項所述之方法,其中,步驟(c2)可利用—旋轉微 位移器來改變入射平面波的入射角度,以精確的控制繞射光栅之週期。 9. 如申凊專利範圍第1項所述之方法,其中,完成步驟(c)後,再將基 >板置入烤箱中以100〜12(TC連續100〜140秒的條件再做一次烘烤,再將 基板置入顯像劑中25〜35秒後,而在光阻上產生繞射光栅。 10. 如申請專利範圍第1項所述之方法,其中,步驟⑷是採用高週波錢 鑛的方式而在該光阻具有光栅圖案的表面機鑛一層具導電性的第一金 屬層’使該光阻表面具有導電性。 11. 如申請專利範圍第1項所述之方法,其中,步驟⑹的電缚加工,是 將該第-金屬連接電鑄槽中的陰極,並在電鋒槽中的陽極連接第二金 屬,使電鑄槽内進行氧化還原作用,利用氧化還原的原理而使該第— 15 1305278 .金屬層相反於該光阻的另面上沉積第二金屬層。 • 12.如t請專利範圍第丨項所述之方法,其/該第—金屬為辞。 13, 如申請補範陳柄述之方法,財,該第:金屬為辞。 14. 如申請細刪丨項所述之方法,其中,該第—金屬與該第二金 屬為相同的金屬。 “ 15·如中請專利範圍第Η項所述之方法,其中,該第一金屬* 金屬同為鎳。 1 16.如申請專利範圍第!項所述之方法,其中,步驟(g)中的光阻去除 液為丙剩。 • Π.-種以如申請專利範圍第i項所述之方法所製得的金屬模仁來製 造繞射光柵元件的方法’其係以該金屬模仁,並採用高分子聚合體為 成型材料,配合微紐成形技術或軟式_之複製成形技術來模製成 繞射光栅元件。 18. 如申請專利細第17項所述之方法,其巾,於該金屬模仁上樵覆 稀薄的該高分子聚合H ’經偏__狀硬化,進而魏高分子聚 合體很容易地自該金屬模仁脫離,即可麟魏射光拇元件。 19. 如申請專利顧第17項所述之方法,其中,該高分子聚合體可為 聚甲基丙烯酸曱酯或聚二曱基石夕氧烧。 20. -種以如申請專利範圍第17項所述之方法所製成之燒射光樹元 件,該繞射光柵元件的深寬比大於1。 21. —種繞射光栅元件,該繞射光柵元件的深寬比大於丨,該繞射光栅 7L件係由南分子聚合體所製成’其中,該高分子聚合體係選自聚甲基 16 1305278 丙y _及聚二甲財氧院中至少其中—種。 22·種用以設計繞射光栅圖案的全像術干涉微影系統,其包括有: 光源’為氣録雷射(He-Cd Laser); 刀光鏡’用以將該雷射光束分成兩束光強度相同的平面波; —反射鏡,用以分別使該兩平面波交會並產生干涉而於一平面上 形成繞射光柵圖案;及1305278 5, the scope of application for patents: 1. - The rib manufacturing method of the diffraction grating element, including the following steps: (a) preparing the substrate; (b) uniformly dispersing the photoresist on one side of the substrate; (c) illuminating the designed grating pattern on the photoresist; W) plating a surface of the photoresist having a grating _ a layer of a conductive first metal layer to make the surface of the photoresist conductive; # (6) placing the substrate having the photoresist in an electroforming bath for electric scale processing, so that the first metal layer is opposite to the other surface of the photoresist to find a second metal layer until the second metal layer has Stop electroforming at a suitable thickness; - (f) remove the substrate from the photoresist; (g) dissolve the photoresist with a photoresist removal solution; (6) remove the remaining diffraction grating The metal mold is used to complete the fabrication of the diffraction grating metal mold. 2. The method described in the patent application, wherein the silk plate is a glass substrate. 3. The method of claim 1, wherein the step (6) is a side spin coater that uniformly spreads the photoresist on the substrate. 4. The method of claim 1, wherein the condition of the spin coating in the step (6) is continuously rotated at 25 to 3500 rpm for 15 to 25 seconds. 5. If the method described in the patent application item 1 is 'the towel, after the step (6) is completed, the substrate can be placed in a general oven to make the first baking with 8 (M00t continuous 10 〇 to 14 〇 seconds). The method of claim 1, wherein the step (c) may further comprise: (cl) placing the substrate in a laser beam for two The plane wave forms a plane of interference; (c2) the laser beam is incident at an appropriate angle, and is divided into two plane waves of the same light intensity via the beam splitter; (c3) the two plane waves are placed on the substrate via the mirror and then placed And (b4) sensitizing the diffraction grating pattern formed by the two plane waves by interference to the photoresist. 7. The method according to claim 6, wherein the laser light The method of claim 6, wherein the step (c2) can use a rotating micro-displacer to change the incident angle of the incident plane wave to be accurate. Control the period of the diffraction grating. The method according to the item 1, wherein, after the step (c) is completed, the substrate is placed in an oven to be baked once in a condition of 100 to 12 (TC continuous for 100 to 140 seconds, and then the substrate is placed. The method of claim 1, wherein the step (4) is a method using a high-frequency coal mine, in the method of applying a diffraction grating to the photoresist in 25 to 35 seconds. The surface of the photoresist having a grating pattern of a layer of electrically conductive first metal layer is made to have electrical conductivity. 11. The method of claim 1, wherein the step (6) is electrically bound. The first metal is connected to the cathode in the electroforming tank, and the anode in the electric front tank is connected to the second metal to perform redox reaction in the electroforming tank, and the principle of redox is used to make the first - 15 1305278 The metal layer is deposited on the opposite side of the photoresist from the second metal layer. • 12. If t, please refer to the method described in the third paragraph of the patent, the / metal is the word. 13, if the application is revised The method, the wealth, the first: the metal is the word. 14. If you apply for the detailed deletion The method of claim 1, wherein the first metal is the same as the second metal. The method of claim 1, wherein the first metal* metal is nickel. The method of claim 2, wherein the photoresist removal liquid in the step (g) is a surplus. • Π.- a metal obtained by the method of claim i. The method of manufacturing a diffraction grating element by a mold core is performed by using the metal mold core, and using a polymer polymer as a molding material, and molding a diffraction grating element by a micro-crown forming technique or a soft-copy molding technique. 18. The method according to claim 17, wherein the towel is coated on the metal mold and the thin polymerized H' is hardened by a partial __ shape, and the polymer is easily The metal mold core is detached, and the lining can be used to illuminate the light element. 19. The method of claim 17, wherein the polymer can be poly(meth) methacrylate or polydecyl oxyn. 20. A fired light tree element produced by the method of claim 17, wherein the diffraction grating element has an aspect ratio greater than one. 21. A diffraction grating element having an aspect ratio greater than 丨, the diffraction grating 7L being made of a south molecular polymer, wherein the polymer polymerization system is selected from the group consisting of polymethyl 16 1305278 C y _ and at least one of the polymethyl sulphuric oxygen hospitals. 22. A holographic interferometric lithography system for designing a diffraction grating pattern, the method comprising: a light source 'for a He-Cd Laser; a knife mirror' for dividing the laser beam into two a plane wave having the same beam intensity; a mirror for respectively forming the two plane waves and generating interference to form a diffraction grating pattern on a plane; and 一固定裴置 干涉平面上。 位於該干涉平面處,關定基板,而使基板位於該 ^如申請專利範圍第22項所述之系統,其更包括有—旋轉微⑽ _微舞||來改變人射縣平面波的騎歧。 24·如申請專纖_ 22賴叙纽, ^ , ,奴轉微位矛 ° ”疋轉微位移ϋ用以致動該系統的其—反射鏡做旋轉。 25.如申請專利範圍第22項所述之系統,其中,該聽雷射 Laser)的波長為325nm,功率為60%。A fixed device is placed on the interference plane. Located at the interference plane, the substrate is fixed, and the substrate is located in the system as described in claim 22, which further includes a rotation micro (10) _ micro dance|| to change the riding of the plane wave of the person shooting county . 24·If you apply for a special fiber _ 22 赖叙纽, ^ , , slave to micro-spear ° 疋 微 micro-displacement ϋ used to actuate the system to rotate the mirror. 25. As claimed in the 22nd article The system described above, wherein the laser has a wavelength of 325 nm and a power of 60%.
TW95141710A 2006-11-10 2006-11-10 Method of manufacturing diffraction grating element mold-core and grating element TW200821633A (en)

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