Ϊ302289 15900twf.doc/g 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種液晶顯示面板，且特別是有關於 一種半穿透半反射液晶顯示面板。 【先前技術】 P返者液晶顯不器的普及化，許多可攜式電子產品對於 液曰日顯示裔的顯示功能的要求也逐漸地提高。舉例而言， 这些可攜式電子產品在室内不僅需要具有良好的畫面顯示 效果，同時在強光的環境下亦需維持適當的晝面品質。因 ^丄如何能讓液晶顯示器在強光的環境下保有清晰的顯禾 品質，便成為了液晶顯示器之技術發展的重要趨勢之一。 基於上述原因，習知技術發展出—種半穿透半反射式液晶 (她SfiectiveLCD)，使用此半穿透半反射式液晶 在戶相亮環境下與在室内環境下同樣 顯不效果。 採用雙Γ 距二式液晶顯示面板通常 r區，有得雙穿= 雜面财製作上財較為複 常會有透光度不佳的;題=反界： 有單圖透半反射式具 液晶顯示面糾有^—晶穴間距之半穿透半反射式 J面圖，而圖1B緣示圖1A之晝素單元的 5 1302289 15900twf.doc/g 示意圖。請同時參考圖1A與圖IB，習知半穿透半反射式 液晶顯示面板100包括一薄膜電晶體陣列基板1100、—彩 色滤光基板1300與一液晶層1200，其中液晶層1200配置 於薄膜電晶體陣列基板1100與彩色濾光基板13〇〇之間。 此外，彩色濾光基板1300包括一基板1310、一彩色渡光 膜1320、一共用電極層1330與一配向膜1340，其中彩色 濾光膜1320配置於基板1310上，而共用電極層1330配置 於彩色濾光膜1320上，且配向膜1340配置於共用電極層 1330 上。 9 薄膜電晶體陣列基板1100包括一基板1110、多條掃 目田配線1120、多條資料配線1130、多個晝素單元與一配向 膜1150，其中這些掃瞄配線112〇、資料配線113〇與晝素 單元配置於基板1110上，且配向膜1150配置於基板η川 上’並覆蓋這些掃瞄配線1120、資料配線1130與晝素單 元。更詳細而言，每一畫素單元包括一薄膜電晶體1142、 一透明畫素電極1144a、一反射晝素電極1144b與介電層 1146，其中薄膜電晶體1142與對應之掃瞄配線111〇與資 料配線1120電性連接。反射晝素電極i144b與透明晝素電 極1144a配置於介電層1146上。此外，反射晝素電極1144b 與透明晝素電極1144a相連，而透明畫素電極1144a與薄 膜電晶體1142電性連接。另外，配向膜ι150覆蓋反射畫 素電極1144b與透明晝素電極H44a。 背光光源所發出的光線l〇a依序經由基板111〇、透明 晝素電極1144a、液晶層1200與共用電極1330，然後由基 6Ϊ302289 15900twf.doc/g IX. Description of the Invention: [Technical Field] The present invention relates to a liquid crystal display panel, and more particularly to a transflective liquid crystal display panel. [Prior Art] The popularity of P-return LCDs has been increasing, and many portable electronic products have gradually increased the requirements for the display function of liquid-skin display. For example, these portable electronic products not only need to have a good picture display effect indoors, but also maintain proper kneading quality in a strong light environment. Because it can make the liquid crystal display maintain clear and clear quality under the bright light environment, it has become one of the important trends in the development of liquid crystal display technology. For the above reasons, the conventional technology has developed a transflective liquid crystal (here, Sfiective LCD), which uses the transflective liquid crystal to have the same effect in an indoor environment as in an indoor environment. The use of double-pitch two-type liquid crystal display panel usually r area, there is a double wear = noisy wealth production is more common than the usual low transmittance; title = reverse boundary: there is a single picture transflective with liquid crystal display The face is corrected by a semi-transflective J-plane view of the cell spacing, and FIG. 1B is a schematic view of the 5 1302289 15900 twf.doc/g of the cell unit of FIG. 1A. Referring to FIG. 1A and FIG. 1B, the transflective liquid crystal display panel 100 includes a thin film transistor array substrate 1100, a color filter substrate 1300, and a liquid crystal layer 1200, wherein the liquid crystal layer 1200 is disposed on the thin film. The crystal array substrate 1100 is interposed between the color filter substrate 1100 and the color filter substrate 13A. In addition, the color filter substrate 1300 includes a substrate 1310, a color light-passing film 1320, a common electrode layer 1330, and an alignment film 1340. The color filter film 1320 is disposed on the substrate 1310, and the common electrode layer 1330 is disposed in color. The filter film 1320 is disposed on the common electrode layer 1330. The thin film transistor array substrate 1100 includes a substrate 1110, a plurality of scanning field wirings 1120, a plurality of data wirings 1130, a plurality of pixel units and an alignment film 1150, wherein the scanning wirings 112 and the data wirings 113 The halogen unit is disposed on the substrate 1110, and the alignment film 1150 is disposed on the substrate η and covers the scan wiring 1120, the data wiring 1130, and the halogen unit. In more detail, each of the pixel units includes a thin film transistor 1142, a transparent pixel electrode 1144a, a reflective pixel electrode 1144b, and a dielectric layer 1146, wherein the thin film transistor 1142 and the corresponding scan wiring 111 The data wiring 1120 is electrically connected. The reflective halogen electrode i144b and the transparent halogen electrode 1144a are disposed on the dielectric layer 1146. Further, the reflective pixel electrode 1144b is connected to the transparent halogen electrode 1144a, and the transparent pixel electrode 1144a is electrically connected to the thin film transistor 1142. Further, the alignment film ι150 covers the reflective pixel electrode 1144b and the transparent halogen electrode H44a. The light emitted from the backlight source sequentially passes through the substrate 111, the transparent halogen electrode 1144a, the liquid crystal layer 1200 and the common electrode 1330, and then the base 6
此當穿透區所呈現的亮度百分比隨著驅動電壓的增加而達 到最大值時，反射區所呈現的亮度百分比卻已過最大值而 Ik著驅動電壓的增加而呈現遞減的現象。類似這樣的現象 便成為了使用單一晶穴間距技術之液晶顯示器，在驅動技 術上難以達到最佳化的主要原因之一。 【發明内容】 1302289 15900twf.doc/g 或外界環境的光線勘也可 ==板_、共用電極_與液晶層 至反射晝素電極1144b。然後，由反射晝素 1144b所 反射的光線10b再依序經由液晶層丨與共用電極測 而自基板1310出射。 圖2^示習知具有單-晶穴間距之半穿透半反射式液 B曰顯不面板之猶電壓與亮度百分比的關侧。請同時參 考圖1A與圖2 ’由於畫素單元具有透明晝素電極⑴如 與反射晝素電極丨丨攝，因此f知半穿料反射式液晶顯 示面板100會具有穿透區驅動電壓_亮度百分比 (transmissive ν_Τ curve) T以及反射區驅動電壓_亮度百 分比jref^ectiveV_TCurve) R，其中亮度百分比為該亮度 值與最大亮度值的百分比。然而，在相同的驅動電壓之下， 穿透區驅動電壓-亮度百分比曲線τ與反射區驅動電壓_亮 度百分比曲線R所對應之亮度百分比並不相同。再者，穿 透區達到最大亮度所需的驅動電壓與反透區達到最大亮度 所需的驅動電壓並不相同。甚至，由於穿透區液晶層的光 程（optical path)是反射區液晶層的光程的一半左右，因 7 1302289 15900twf.doc/g 上述之主動元件陣列基板與對向基板之間可以是維 持單一晶穴^間距。 基於上达目的或其他目的，本發明提出一種半穿透半 反射式液晶顯示面板，其包括一主動元件陣列基板、一對 向基板與-液晶層，其中液晶層配置於 =板3。主動元件陣列基板具有多條掃二岌 多個晝素單元。每—晝素單元包括一主動 極介電層、一反射晝素電極與-透明晝 、車接°入麗、恳访70件與對應之掃瞒配線與資料配線電性 ΐ上。：f::主動元件電性連接，而介電層配置於金屬 置於介電層上，且反射畫素電極與 ίί:: :ΐ—電容。透明畫素電極配置於介電層上， 性連接。對向基板具有面向主動元件陣列 基板之共用電極層。 射書金屬f更可以與透明晝素電極連接。此外，反 右:好二°可以疋具有凸塊化表面。介電層的材質可以是 外’主動元件可以是-薄膜電晶體。再者 反射畫素電極之材質可以是金屬。 丹有 直配向排列夜曰曰層之液曰曰分子可以是水平配向排列或垂 疊。上述之金屬層與透明畫素電極之間可以是有部分重 持單一上元件陣列基板與對向基板之間可以是維 9 1302289 15900twf.doc/g 反射式液晶顯示=明提出一種半穿透半 向基板與-液晶層外=主;元件陣列基板、-對 與對向基板之間。主動元轉舰& 多條資料配線與多個查辛一車：板具有多條掃瞄配線、 元件、一凸塊晝料元包括一主動 -第二介電層與—透: :广“ 一反射畫素電極、 配線與資料配線電^連屯接。° 牛，對應之掃晦 ――配置於凸塊化金屬層上一。；二共； 形地配置於第一介電層上，且反 ，連接。第二介電層配置於反射晝素“上:透明=! 極配置於第二介電層上，並與主動元件電性 二部二 透明晝素電極位於反財素電極上方。對向基板具有^ 主動元件陣列基板之一共用電極層。 上述之第二介電層的材質可以是有機材料， 電層的材質可以是無機材料。主動元件可以是一薄膜電晶 體。此外，反射晝素電極的材質可以是金屬。 上述之液晶層之液晶分子可以是水平配向 直配向排列。 x工 上述之反射晝素電極與透明晝素電極之間可以 部分重疊。 上述之主動兀件陣列基板與對向基板之間可以 持單一晶穴間距。 基於上述，本發明使用介電層覆蓋反射晝素電極或是 1302289 15900twf.doc/g ，，射晝素電極設計成浮動電極（⑽响…伽如），也 就疋不接到電壓的獨立導體層，因此反射晝素電極上方之 液晶層與透明畫素電極上方之液晶層所受到的有效電壓並 不2同。換言之，反射晝素電極區達到最大亮度與透明晝 素私極區達到最大亮度所需的驅動電壓的差距能夠縮至最 小，以改善顯示品質。 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 【弟一實施例】 圖3A、％示依照本發明第一較佳實施例之半穿透半反 射式液晶顯示面板的剖面圖，而圖3B繪示圖3八之畫素單 元的等效電路圖。請同時參考圖3A與圖3B，半穿透半反 射式液晶顯示面板200包括一主動元件陣列基板、一 對向基板2300與一液晶層2200，其中液晶層2200配置於 主動元件陣列基板2100與對向基板2300之間。此外，對 向基板2300包括一基板2310、一彩色濾光膜2320、一共 用電極層2330與一配向膜2340，其中彩色渡光膜2320配 置於基板2310上，而共用電極層2330配置於彩色濾光膜 2320上，且配向膜2340配置於共用電極層2330上。在本 貝把例中，液晶層2200之液晶分子為垂直配向排列，然而 本發明之液晶層2200之液晶分子也可是水平配向排列。此 外’本貫施例之主動元件陣列基板2100與對向基板2300 11 1302289 15900twf.doc/g 之間大致維持單一晶穴間距。 主動元件陣列基板2100包括一基板2110、多條掃瞄 配線2120、多條資料配線2130、多個畫素單元與一配向膜 2150 ’其中這些掃瞄配線212〇、資料配線213〇與畫素單 元配置於基板2110上，而配向膜2150配置於基板2110 上’並覆蓋這些掃瞄配線2120、資料配線2130與晝素單 元。更詳細而言，各個畫素單元包括一主動元件2142、一 透明畫素電極2144a、一反射畫素電極2144b與一介電層 2148 ’其中主動元件2142與對應之掃瞄配線212〇與資料 配線2130電性連接。此外，反射晝素電極21她與主動元 件2142電性連接，例如是與主動元件2142之汲極（Drain) 電性連接。 介電層2148配置於基板211〇上，並覆蓋反射晝素電 極2144b。另外，透明晝素電極2144a配置於介電層2148 上，並與主動元件2142電性連接，例如是與主動元件2142 之〉及極電性連接，且部分透明晝素電極2144a可以位於反 射=素私極214仆上方。這樣一來，反射區與穿透區交界 地=勺不規則排列的液晶所造成的漏光現象可以被遮蔽。 值知一提的是，反射晝素電極2144b可以直接與主動元件 jl42電性連接，例如是與主動元件2142之汲極電性連接。 或者，反射晝素電極214牝也可以經由透明晝素電極214如 與主動元件2142電性連接，例如是與主動元件2142之没 極電性連接。 同樣地’透明晝素電極2144a也可以直接與主動元件 12 1302289 15900twf.d〇c/g 戍者，透明tji 件⑽之難電性連接。 動i 也可以經由反射晝素電極η桃 :、動％件2丨42電性連接，例如是與主動元件2⑷之 =性連接。總之’當絲元件2142 時，透財素電 動電!^與反射晝素電極2144b將可以獲得相同的畫素驅 “由於介電層2148覆蓋反射畫素電極2144b上，因此 = 晶層22〇°、介電層2148與反射畫素 〇 構成甩谷Ci。此外，共用電極層2330、液晶声 2〇〇f透明畫素電極2〗輪構成電容Q。值得注意的是曰， 由於介電層2148覆蓋反射晝素電極21桃上，因此 的驅動電壓分別輸入至透明畫素電極214如與反射^素電 極2144b時’施加於透明晝素電極21他上方之&晶^ 2200之有效電壓將大於施加於反射畫素電極2ΐ4牝上丄 液晶層2200之有效電壓。 圖4緣示依照本發明第一較佳實施例之驅動電壓與亮 度百分比的關係圖。請同時參考圖3Α與圖4,經由^二 計選擇適當的介電層2148的材f及厚度，的=動= 壓分別輸人至翻晝素電極2撕與反射晝素電極2⑽ 時，穿透區，_電1亮度百分比曲線Τ與反射區驅動電舞 -亮度百分比曲線R所對應之亮度百分比的差距將可以^ 小。換言之，本實施例之半穿透半反射式液晶顯示面板· 不僅可以採用現有的驅動方式加以驅動，而在驅動電壓增 加的情況下，穿透區亮度與反射區亮度也能同時上升，並 13 1302289 15900twf.doc/g I穿透區制最大亮度與反射區達到最大亮度所需的驅動 電壓約略一致，因此穿透區與反射區可以具有相近的電壓 ' 控制亮度表現，而無須採用雙重晶穴間距（dual cellgap) 便可達到較高的亮度與較佳的顯示品質。 在本實施例中，對向基板2300是彩色濾光基板（c〇l〇r filter substrate)，而主動元件陣列基板21〇〇可以是薄膜電 日日體陣列基板（thin film transistor array substrate)、二極 鲁辦列基板或由其他具#三個端子之絲元件所構成的基 板。然而，主動元件陣列基板2100也可以是c〇A基板， 而對=基板2300為玻璃基板，其中c〇A基板為彩色濾光 膜在薄膜電晶體陣列上（c〇1〇r Filter 〇n Array，c〇A )的结 構。 主動元件2142可以是薄膜電晶體、二極體或是其他 具有二個端子之主動元件。此外，反射畫素電極214仆的 =質可以是鋁、銀或是其他具有高反射率的金屬。另外， 介電層2148的材質可以是有機材料或是無機材料，而介電 層2148也可以是由主動元件2142中所延伸出來的閘極絕 緣層（gate insulating layer)或其他另加的介電層。然而， 包層2148也可以是覆蓋主動元件2142的保護層 (passivation layer)或是平坦化層（ρ1·Γίζ_η1—Γ)。 再者，透明晝素電極2144a的材質可以是銦錫氧化物 (indium tin oxide，IT〇)、銦鋅氧化物（_醜 ⑽此， 泣〇)、鋅鋁氧化物（aluminum zinc oxide, AZO)或是並 他透明導體材質。 ’ ^ 14 1302289 15900twf.doc/g 為了提尚反射畫素電極2144b的反射率，反射晝素電 極2144b 了以製作成具有凸塊化表面（心呵丨叩犯池⑵）， 因此本貫施例並不限定反射畫素電極2144b的表面型態。 就具有凸塊化表面之反射晝素電極2144b而言，此種型態 的反射晝素電極2144b的製作方法可以是先在基板21〇〇 上形成一介電層2146，而使此介電層2146具有凸塊化表 面然後’在介電層2146上共形地（conformaiiy )形成反 射畫素電極2144b，而形成反射畫素電極2144b的方式可 以是濺鍍製程。然而，具有凸塊化表面之反射畫素電極 2144b也可以是其他型態，其係詳述如後。 【弟二實施例】 圖5繪示依照本發明第二較佳實施例之半穿透半反射 式液晶顯示面板的剖面圖。請同時參考圖3b與圖5，本實 施例與第一實施例相似，其不同之處在於：在本實施例之 半牙透半反射式液晶顯示面板3〇〇中，在主動元件陣列基 板3100上之每一晝素單元包括一主動元件2142、一凸塊 化金屬層3110、一介電層3120、一透明晝素電極313〇a、 一反射晝素電極3130b與一介電層3140。主動元件2142 與對應之掃瞄配線2120與資料配線2130電性連接。同樣 地，在本實施例中，液晶層2200之液晶分子為垂直配向排 列，然而本發明之液晶層2200之液晶分子也可是水平配向 排列。此外’本實施例之主動元件陣列基板3100與對向基 板2300之間大致維持單一晶穴間距。 凸塊化金屬層3110配置於基板2110上，而凸塊化金 15 1302289 15900twf.doc/g 屬層3110可以是M1金屬層之一部分，其中⑽金屬層是 指構成主動το件2142的第-層金屬層。因此，凸塊化金屬 層3110更可以與主動元件陣列基板31〇〇之共用配線 (common lme)電性連接或者凸塊化金屬層311〇本身即 為共用配線之-部分’因而凸塊化金屬層311〇與反射晝素 電極3130b之間將可以形成儲存電容（st〇rage⑶押说沉， Cst)，其中共用配線（c〇mm〇n Hne)由於其大部分是配 置於反射晝素電極3130b下方，不會遮蔽到穿透區的背光 光源、更可以提高開口率。此外，介電層312〇共形地配置 於凸塊化金屬層3110上’而介電層312G可以是閘極絕緣 層。反射畫素電極3130b共形地配置於介電層312〇上，且 反射晝素電極313Gb與絲元件2142電性連接，例如是與 主動元件2142之及極電性連接。由於反射畫素電極3工鳩 共形地配置於介電層312G i，因此反射晝素電極313% 具有凸塊化表面’以提高反射率。另外，反射畫素電極 3130b可以是姐金屬層之—部分，其中⑽金屬層是指/構 成主動元件叫2的第二層金屬層。值得—提的是，反射晝 素電極删b可以直接與主動元件2142電性連接，例如是 吳主動70件2142之没極電性連接。或者，反射晝素電極 3130b也可以經由透明畫素電極313()&與主動元件別 性連接，勤是與絲元件2142之汲極電性連接。 赶配置於基板211G上’域蓋反射畫素電 的材質可以是有機材料或是幽 枓’而介電層3刚也可以是平坦化層。此外，透明畫素電 16 1302289 15900twf.doc/g Ϊ接/ Λ 電層3140上，並與主動元件叫2電性 連接，例如疋與主動元件2142之沒極電性連接， 明畫素電極31地位於反射畫素電極31通上方。同樣刀地 f明晝素紐313Ga也可以餘與杨元件2142電 接’例如是與主動元件2142之汲極紐連接。或者 f素電也可以經由反射錄電極31鳥與主二 1 電1 連接’_例如是與主動元件2142之汲極電性連 斑及二去Ϊ主動元件2142開啟時，透明畫素電極3130a 與反射晝素電極3隱將可以獲得相_晝素軸賴。 由於介電層3刚覆蓋反射晝素電極313%上，因此 當相同的._電壓分別輸人至透明晝素電極31施與反射 晝素電極31鳩時，施加於咖晝素電極3丨施上方之液 曰曰i 200之有效私壓將大於施力口於反射畫素電極犯⑽ 2 22(K)之有效電壓。同樣地，經由電性設計選 擇^的介電層3140的厚度與材質，當主動元件2142開 啟透區制最大亮度與反射區達到最大亮度所需的 驅動笔壓略-致，因此穿透區與反射區可以具有同樣的 電壓控制壳度表現，而無須採用雙重晶穴間距（偏— gap)。此外’由於反射晝素電極31猶具有凸塊化表面， 因此反射晝素電極2144b將具有較高的反射率。 【第三實施例】 圖6A繪示依照本發明第三較佳實施例之半穿透半反 射式液晶顯示面板的剖面圖，而圖6B繪示圖从之畫素單 7L的不意圖。請同時參考圖6A與圖6B，本實施例與第一 1302289 15900twf.doc/g 只加例相似，其不同之處在於：在本實施例之半穿透半反 射式液晶顯示面板400中，在主動元件陣列基板41〇〇上之 每一晝素單元包括一主動元件2142、一金屬層411〇、一介 電層4120、一透明畫素電極4130a與一反射畫素電極 4130b。主動元件2142與對應之掃瞄配線212〇與資料配線 2130電性連接。同樣地，在本實施例中，液晶層㈨之 液晶分子為垂直配向排列，然而本發明之液晶層22〇〇之液 晶分子也可是水平配向排列。此外，本實施例之主動元件 陣列基板4100與對向基板23〇〇之間大致維持單一晶穴 距。 金屬層4110與主動元件2142電性連接，而金屬層 4110可以是M2金屬層之-部分或是纽金屬層之一部 刀此外，金屬層411〇可以直接與主動元件2142電性連 接。或者’金屬層4110也可經由透明晝素電極41施電性 連接至主動το件2142。另外’介電層412G配置於基板211〇 土，並覆蓋金屬層賴。介電層彻的材質可以是有機 材料或是無機材料。 反射晝素電極4130b配置於介電層4120上，且反射 旦素電極413%與金屬層411()係麵合成一電容a。換言 反射旦素包極41爲為浮動電極如）， =就是不連接至其他電位的獨立導體層。在另一實施例 射畫素電極4·可以是具有凸塊化表面，以增加 f射率。此外」透明晝素電極41施配置於介電層Μ% U動元件2!42電性連接。特別地，反射晝素電極 1302289 15900twf.doc/g 4130b係與金屬層4110的重疊面積與兩者之間的距離將決 疋鉍加於反射晝素電極4130b上方之液晶層2200的有效恭 壓。 & 由於透明晝素電極4130a係直接與主動元件2142電 性連接，而反射晝素電極4130b與金屬層411〇電性耦合。 換言之’當一特定驅動電壓經由資料配線212〇輸入晝素單 元時，透明晝素電極4130a與反射晝素電極413%&具有When the percentage of brightness exhibited by the penetrating region reaches a maximum value as the driving voltage increases, the percentage of brightness exhibited by the reflecting region has exceeded the maximum value and Ik has decreased with the increase of the driving voltage. A phenomenon like this has become one of the main reasons why it is difficult to achieve optimization in driving technology for a liquid crystal display using a single hole spacing technique. SUMMARY OF THE INVENTION 1302289 15900twf.doc/g or ambient light ray survey can also be == plate_, common electrode_ and liquid crystal layer to reflective halogen electrode 1144b. Then, the light 10b reflected by the reflective halogen 1144b is sequentially emitted from the substrate 1310 via the liquid crystal layer and the common electrode. Fig. 2 is a schematic view showing the side of the semi-transparent and semi-reflective liquids having a single-cavity spacing. Please refer to FIG. 1A and FIG. 2 simultaneously. Since the pixel unit has a transparent halogen electrode (1), such as a reflection with a reflective halogen electrode, the transflective liquid crystal display panel 100 has a transmissive region driving voltage _ brightness. Permissive ν_Τ curve T and reflection zone driving voltage _ brightness percentage jref^ectiveV_TCurve) R, where the brightness percentage is the percentage of the brightness value and the maximum brightness value. However, under the same driving voltage, the penetration region driving voltage-luminance percentage curve τ is not the same as the luminance percentage corresponding to the reflection region driving voltage_brightness percentage curve R. Furthermore, the driving voltage required to achieve maximum brightness in the through-area is not the same as the driving voltage required to achieve maximum brightness in the anti-transmission zone. In addition, since the optical path of the liquid crystal layer in the transmissive region is about half of the optical path of the liquid crystal layer in the reflective region, the active device array substrate and the opposite substrate can be maintained as described in 7 1302289 15900 twf.doc/g. Single crystal hole ^ spacing. The present invention provides a transflective liquid crystal display panel comprising an active device array substrate, a pair of substrates and a liquid crystal layer, wherein the liquid crystal layer is disposed on the = plate 3, for the purpose of development or other purposes. The active device array substrate has a plurality of scanning units and a plurality of halogen units. Each of the halogen elements includes an active dielectric layer, a reflective halogen electrode and a transparent 昼, a vehicle connected to the 丽, a 70-seat and a corresponding broom wiring and data wiring electrical ΐ. :f:: The active device is electrically connected, and the dielectric layer is disposed on the metal layer on the dielectric layer, and the reflective pixel electrode and the ίί:: :ΐ-capacitor. The transparent pixel electrodes are disposed on the dielectric layer and are connected sexually. The opposite substrate has a common electrode layer facing the active device array substrate. The book metal f can be connected to the transparent halogen electrode. In addition, the reverse right: good two ° can have a bumped surface. The material of the dielectric layer may be an outer 'active element' which may be a thin film transistor. Furthermore, the material of the reflective pixel electrode may be metal. Dan has a direct alignment of the liquid helium molecules that can be arranged horizontally or vertically. The metal layer and the transparent pixel electrode may be partially overlapped. The single upper element array substrate and the opposite substrate may be in a dimension 9 1302289 15900 twf.doc/g reflective liquid crystal display = a semi-transparent half To the substrate and the - liquid crystal layer outside = main; between the element array substrate, the - pair and the opposite substrate. Active Meta-Transfer & Multiple Data Wiring and Multiple Chasing One Cars: The board has multiple scanning wires, components, and a bump block including an active-second dielectric layer and - through: A reflective pixel electrode, the wiring and the data wiring are connected to each other. ° The cow, the corresponding broom - is disposed on the bumped metal layer; the second; the ground is disposed on the first dielectric layer, And the second dielectric layer is disposed on the reflective halogen "on: transparent =! the pole is disposed on the second dielectric layer, and the active component is electrically two-part transparent halogen electrode is located above the anti-financial electrode . The counter substrate has one common electrode layer of the active device array substrate. The material of the second dielectric layer may be an organic material, and the material of the electric layer may be an inorganic material. The active component can be a thin film transistor. In addition, the material of the reflective halogen electrode may be metal. The liquid crystal molecules of the above liquid crystal layer may be arranged in a horizontal alignment. x The above-mentioned reflective halogen electrode and the transparent halogen electrode may partially overlap. A single hole spacing can be maintained between the active element array substrate and the opposite substrate. Based on the above, the present invention uses a dielectric layer to cover the reflective halogen electrode or 1302289 15900 twf.doc/g, and the radioactive electrode is designed as a floating electrode ((10) ringing ... gamma), that is, a separate conductor that is not connected to a voltage. The layer, therefore, the effective voltage applied to the liquid crystal layer above the reflective halogen electrode and the liquid crystal layer above the transparent pixel electrode is not the same. In other words, the difference between the maximum brightness of the reflective halogen electrode region and the driving voltage required to achieve maximum brightness in the transparent polar region can be minimized to improve display quality. The above and other objects, features, and advantages of the present invention will become more apparent from the understanding of the appended claims appended claims [Embodiment] FIG. 3A and FIG. 3B are cross-sectional views showing a transflective liquid crystal display panel according to a first preferred embodiment of the present invention, and FIG. 3B is a diagram showing a pixel unit of FIG. Equivalent circuit diagram. Referring to FIG. 3A and FIG. 3B, the transflective liquid crystal display panel 200 includes an active device array substrate, a pair of substrates 2300 and a liquid crystal layer 2200. The liquid crystal layer 2200 is disposed on the active device array substrate 2100 and the pair. Between the substrates 2300. In addition, the opposite substrate 2300 includes a substrate 2310, a color filter film 2320, a common electrode layer 2330, and an alignment film 2340. The color light-emitting film 2320 is disposed on the substrate 2310, and the common electrode layer 2330 is disposed on the color filter. The light film 2320 is disposed on the common electrode layer 2330. In the example of the present invention, the liquid crystal molecules of the liquid crystal layer 2200 are vertically aligned, however, the liquid crystal molecules of the liquid crystal layer 2200 of the present invention may also be arranged in a horizontal alignment. Further, a single cell pitch is maintained substantially between the active device array substrate 2100 and the opposite substrate 2300 11 1302289 15900 twf.doc/g. The active device array substrate 2100 includes a substrate 2110, a plurality of scan wires 2120, a plurality of data wires 2130, a plurality of pixel units and an alignment film 2150', wherein the scan wires 212, the data wires 213, and the pixel unit The alignment film 2150 is disposed on the substrate 2110 and covers the scan wiring 2120, the data wiring 2130, and the halogen unit. In more detail, each pixel unit includes an active component 2142, a transparent pixel electrode 2144a, a reflective pixel electrode 2144b and a dielectric layer 2148', wherein the active component 2142 and the corresponding scan wiring 212 and data wiring 2130 electrical connection. In addition, the reflective element electrode 21 is electrically connected to the active element 2142, for example, to the drain of the active element 2142. The dielectric layer 2148 is disposed on the substrate 211 and covers the reflective halogen electrode 2144b. In addition, the transparent halogen electrode 2144a is disposed on the dielectric layer 2148 and electrically connected to the active device 2142, for example, electrically connected to the active device 2142, and the partially transparent halogen electrode 2144a may be located at the reflective layer. Private pole 214 servant above. In this way, the light leakage caused by the irregularly arranged liquid crystal at the boundary between the reflective region and the penetrating region can be shielded. It is to be noted that the reflective pixel electrode 2144b can be directly electrically connected to the active device jl42, for example, electrically connected to the active element 2142. Alternatively, the reflective pixel electrode 214A can also be electrically connected to the active device 2142 via the transparent halogen electrode 214, for example, to the active device 2142. Similarly, the 'transparent halogen electrode 2144a can also be directly connected to the active component 12 1302289 15900 twf.d〇c/g, the transparent tji device (10). The movable i can also be electrically connected via the reflective halogen electrode η peach, the movable component 2丨42, for example, to the active element 2(4). In short, when the wire element 2142 is used, the same elemental drive can be obtained with the reflective elemental electrode 2144b. Since the dielectric layer 2148 covers the reflective pixel electrode 2144b, the = crystal layer 22〇 The dielectric layer 2148 and the reflective pixel 〇 form a valley C. In addition, the common electrode layer 2330 and the liquid crystal acoustic 2 〇〇f transparent pixel electrode 2 constitute a capacitance Q. It is worth noting that due to the dielectric layer 2148 Covering the reflective pixel electrode 21, the effective voltage of the & crystal 2200 applied above the transparent pixel electrode 21 when the driving voltage is respectively input to the transparent pixel electrode 214, such as the reflective electrode 2144b, is greater than The effective voltage applied to the liquid crystal layer 2200 on the reflective pixel electrode 2ΐ4牝. Fig. 4 is a diagram showing the relationship between the driving voltage and the brightness percentage according to the first preferred embodiment of the present invention. Please refer to FIG. 3A and FIG. ^ Two counts select the appropriate dielectric layer 2148 material f and thickness, = motion = pressure respectively input to the transflase electrode 2 tear and reflect the halogen electrode 2 (10), the penetration zone, _ electricity 1 brightness percentage curve Τ Drive with electric dance in the reflective area - brightness percentage The difference in the percentage of brightness corresponding to the curve R will be small. In other words, the transflective liquid crystal display panel of the present embodiment can be driven not only by the existing driving method but also by the increase of the driving voltage. The brightness of the transmissive area and the brightness of the reflective area can also rise at the same time, and the maximum brightness of the 13 1302289 15900 twf.doc/g I penetration area is approximately the same as the driving voltage required for the maximum brightness of the reflection area, so the penetration area and the reflection area can have The similar voltage 'controls the brightness performance without the use of dual cellgap to achieve higher brightness and better display quality. In this embodiment, the opposite substrate 2300 is a color filter substrate (c The active device array substrate 21 can be a thin film transistor array substrate The substrate is formed. However, the active device array substrate 2100 may also be a c〇A substrate, and the pair substrate 2300 is a glass substrate, wherein the c〇A substrate is colored. The structure of the filter film on the thin film transistor array (c〇1〇r Filter 〇n Array, c〇A). The active device 2142 may be a thin film transistor, a diode or other active device having two terminals. In addition, the reflective pixel electrode 214 may be aluminum, silver or other metal having high reflectivity. In addition, the dielectric layer 2148 may be made of an organic material or an inorganic material, and the dielectric layer 2148 may also be used. It is a gate insulating layer or other additional dielectric layer extending from the active component 2142. However, the cladding 2148 may also be a passivation layer or a planarization layer (ρ1·Γίζ_η1 - 覆盖) covering the active device 2142. Furthermore, the material of the transparent halogen electrode 2144a may be indium tin oxide (IT〇), indium zinc oxide (_ ugly (10), weeping), aluminum zinc oxide (AZO). Or his transparent conductor material. ' ^ 14 1302289 15900twf.doc/g In order to improve the reflectivity of the reflective pixel electrode 2144b, the reflective elemental electrode 2144b is formed to have a convexized surface (the heart of the pool (2)), so the present example The surface type of the reflective pixel electrode 2144b is not limited. In the case of the reflective pixel electrode 2144b having a bumped surface, the reflective pixel electrode 2144b of this type may be formed by first forming a dielectric layer 2146 on the substrate 21, and the dielectric layer is formed. The 2146 has a bumped surface and then 'conformaiiy' forms a reflective pixel electrode 2144b on the dielectric layer 2146, and the reflective pixel electrode 2144b is formed by a sputtering process. However, the reflective pixel electrode 2144b having a bumped surface may be of other types as detailed below. [Second Embodiment] Fig. 5 is a cross-sectional view showing a transflective liquid crystal display panel in accordance with a second preferred embodiment of the present invention. Referring to FIG. 3b and FIG. 5 simultaneously, this embodiment is similar to the first embodiment except that in the half-transparent liquid crystal display panel 3 of the embodiment, the active device array substrate 3100 Each of the pixel units includes an active component 2142, a bumped metal layer 3110, a dielectric layer 3120, a transparent germanium electrode 313A, a reflective germanium electrode 3130b, and a dielectric layer 3140. The active component 2142 is electrically connected to the corresponding scan wire 2120 and the data wire 2130. Similarly, in the present embodiment, the liquid crystal molecules of the liquid crystal layer 2200 are vertically aligned, but the liquid crystal molecules of the liquid crystal layer 2200 of the present invention may also be arranged in a horizontal alignment. Further, a single cell pitch is maintained substantially between the active device array substrate 3100 and the opposite substrate 2300 of the present embodiment. The bumped metal layer 3110 is disposed on the substrate 2110, and the bumped gold 15 1302289 15900 twf.doc/g genus layer 3110 may be a part of the M1 metal layer, wherein the (10) metal layer refers to the first layer constituting the active τ 2 member 2142 Metal layer. Therefore, the bumped metal layer 3110 can be electrically connected to the common wiring of the active device array substrate 31 or the bump metal layer 311 itself is a portion of the common wiring. Thus, the bump metal A storage capacitor (st〇rage(3), Cst) may be formed between the layer 311〇 and the reflective pixel electrode 3130b, wherein the common wiring (c〇mm〇n Hne) is mostly disposed on the reflective pixel electrode 3130b Below, it will not cover the backlight source in the penetrating area, and the aperture ratio can be increased. Further, the dielectric layer 312 is conformally disposed on the bumped metal layer 3110' and the dielectric layer 312G may be a gate insulating layer. The reflective pixel electrode 3130b is conformally disposed on the dielectric layer 312, and the reflective pixel electrode 313Gb is electrically connected to the wire element 2142, for example, to the active element 2142. Since the reflective pixel electrode 3 is conformally disposed on the dielectric layer 312G i , the reflective pixel electrode 313% has a bumped surface ′ to improve the reflectance. Alternatively, the reflective pixel electrode 3130b may be a portion of the metal layer of the sister, wherein the (10) metal layer refers to/the second metal layer of the active device 2 . It is worth mentioning that the reflective element electrode b can be directly electrically connected to the active element 2142, for example, the Wu active 70 piece 2142 is not electrically connected. Alternatively, the reflective pixel electrode 3130b may be connected to the active element via the transparent pixel electrode 313()& and is electrically connected to the wire of the wire element 2142. The material of the domain cover reflective pixel element disposed on the substrate 211G may be an organic material or a 枓 枓 and the dielectric layer 3 may just be a planarization layer. In addition, the transparent pixel electricity 16 1302289 15900twf.doc / g / / Λ electrical layer 3140, and the active component is called 2 electrical connection, for example, the 没 and the active component 2142 is not electrically connected, the bright pixel electrode 31 The ground is located above the reflective pixel electrode 31. Similarly, the alum 313 Ga can also be electrically connected to the male component 2142, for example, to the drain of the active component 2142. Alternatively, the ferrite electrode may also be connected to the main diode 1 via the reflective recording electrode 31. For example, when the gate electrode of the active component 2142 is electrically connected and the second active component 2142 is turned on, the transparent pixel electrode 3130a is The reflective halogen electrode 3 will be able to obtain the phase. Since the dielectric layer 3 has just covered the reflective halogen electrode 313%, when the same ._ voltage is input to the transparent halogen electrode 31 and the reflective halogen electrode 31, it is applied to the curcumin electrode 3 The effective private pressure of the upper liquid 曰曰i 200 will be greater than the effective voltage of the force applied to the reflective pixel electrode (10) 2 22 (K). Similarly, the thickness and material of the dielectric layer 3140 are selected through electrical design. When the active device 2142 turns on the maximum brightness of the through-region and the driving pen pressure required for the maximum brightness of the reflective region, the penetration region is The reflective region can have the same voltage-controlled shell performance without the need for a double hole spacing (pitch-gap). Further, since the reflective halogen electrode 31 still has a convexized surface, the reflective halogen electrode 2144b will have a high reflectance. [THIRD EMBODIMENT] Fig. 6A is a cross-sectional view showing a transflective liquid crystal display panel according to a third preferred embodiment of the present invention, and Fig. 6B is a view showing a schematic view of the pixel unit 7L. Please refer to FIG. 6A and FIG. 6B at the same time. This embodiment is similar to the first example of 1302289 15900 twf.doc/g, except that in the transflective liquid crystal display panel 400 of the present embodiment, Each of the pixel units on the active device array substrate 41 includes an active device 2142, a metal layer 411, a dielectric layer 4120, a transparent pixel electrode 4130a, and a reflective pixel electrode 4130b. The active component 2142 is electrically connected to the corresponding scan wiring 212 and the data wiring 2130. Similarly, in the present embodiment, the liquid crystal molecules of the liquid crystal layer (9) are vertically aligned, but the liquid crystal molecules of the liquid crystal layer 22 of the present invention may also be arranged in a horizontal alignment. In addition, a single crystal acube distance is substantially maintained between the active device array substrate 4100 and the opposite substrate 23A of the present embodiment. The metal layer 4110 is electrically connected to the active device 2142, and the metal layer 4110 may be a portion of the M2 metal layer or a portion of the new metal layer. Further, the metal layer 411〇 may be electrically connected directly to the active device 2142. Alternatively, the metal layer 4110 can also be electrically connected to the active device 2142 via the transparent halogen electrode 41. Further, the dielectric layer 412G is disposed on the substrate 211 and covers the metal layer. The material of the dielectric layer can be organic or inorganic. The reflective pixel electrode 4130b is disposed on the dielectric layer 4120, and the reflective dendrite electrode 413% is combined with the metal layer 411() to form a capacitor a. In other words, the reflective denier 41 is a floating electrode such as, and = is a separate conductor layer that is not connected to other potentials. In another embodiment, the pixel electrode 4 can have a bumped surface to increase the f-radiation. Further, the transparent halogen electrode 41 is disposed to be electrically connected to the dielectric layer U% U-moving element 2!42. In particular, the overlapping area of the reflective halogen electrode 1302289 15900twf.doc/g 4130b with the metal layer 4110 and the distance between the two will be effective for the liquid crystal layer 2200 above the reflective halogen electrode 4130b. & Since the transparent halogen electrode 4130a is directly electrically connected to the active element 2142, the reflective halogen electrode 4130b is electrically coupled to the metal layer 411. In other words, when a specific driving voltage is input to the pixel unit via the data wiring 212, the transparent halogen electrode 4130a and the reflective halogen electrode 413% &
的電壓互異，因此施加於透明晝素電極413〇a與反射晝素 包極4130b上之液晶層2200的有效電壓也就互異。藉由選 擇反射晝素電極4130b與金屬層4110的重疊面積或距離將 可以決定反射晝素電極413%所具有的電壓，因此穿透區 達到最大亮度與反射區達到最大亮度所需的驅動電壓將可 約略一致。 綜上所述，本發明之半穿透半反射式液晶顯示面板至 少具有下列優點： 、「她μ知技術’在本發明中，反射畫素電極區 達到最大免度與透财素電極區朗最大亮度所需的驅動 以？Ϊ一致。換言之，本發明具有較高的亮度與較 佳的顯不品質。 二、當_電塵增加時’本發明之穿透區亮度與反射 日寸上升，亚且穿透區達到最大亮度與反射區 達到取大⑨度所需的驅動電壓約略—致，因此穿透區與反 ，區可以具有相近的電壓控制亮度表現，而錢採 晶穴間距便可麵較高的亮度與錄_示品質。 19 1302289 15900twf.doc/g 2發明可以採用現有的驅動方式加以驅動。 雖然本發明已以較佳實施例揭露 限定本發明，任何熟習此技藝者，在不脫離 和範圍内，當可作些許之更動與潤飾，精神 耗圍當視_之申請專鄕圍所界定者為準。^ .保4 【圖式簡單說明】 圖1A繪示習知且有罩一曰 液晶顯示面板的剖面圖。θθ/3之半牙透半反射式 圖1Β繪示圖U之畫素單元的示意圖。 圖2繪不習知具有單一晶穴間距之 晶顯示面板之電顯亮度百分射式液 ，3A緣示依照本發明第—較佳實施例之半 射式液晶顯示面板的剖面圖。 圖3B緣示圖3A之晝素單元的等效電路圖。 圖情示依照本發明第—較佳實施例 度百分比的關係圖。 勒n 圖5繪示依照本發明第二較伟每 式液晶顯㈣㈣剖關。"^_之半穿透半反射 +，6A繪示依照本發㈣三較佳實_之半穿 射式液晶顯示面板的剖面圖。 圖6B繪示圖6A之晝素單元的示意圖。 【主要元件符號說明】 “ 10a、10b ··光線 100 :習知半穿料反射歧晶顯示面板 20 1302289 15900twf.doc/g 200、300、400 :半穿透半反射式液晶顯示面板 1100 :薄膜電晶體陣列基板 1110、1310、2110、2310 ··基板 1120、2120 :掃瞄配線 _ 1130、2130 :資料配線 1142 :薄膜電晶體 1144a、2144a、3130a、4130a :透明晝素電極 1144b、2144b、3130b、4130b :反射晝素電極 1146、2146、2148、3120、3140、4120 :介電層 1200、2200 :液晶層 1300 :彩色濾光基板 1320、2320 :彩色濾光膜 1330、2330 :共用電極層 2100、3100、4100 :主動元件陣列基板 2142 :主動元件 2300 :對向基板 3110 :凸塊化金屬層 4110 :金屬層 21The voltages are different from each other, so the effective voltages applied to the liquid crystal layer 2200 on the transparent halogen electrode 413a and the reflective halogen package 4130b are different. By selecting the overlapping area or distance of the reflective pixel electrode 4130b and the metal layer 4110, the voltage of the reflective pixel electrode 413% can be determined, so that the driving voltage required for the penetration region to reach the maximum brightness and the maximum brightness of the reflection region will be Can be roughly the same. In summary, the transflective liquid crystal display panel of the present invention has at least the following advantages: "She knows the technology" In the present invention, the reflective pixel region reaches the maximum exemption and the permeation electrode region The driving force required for maximum brightness is consistent. In other words, the present invention has higher brightness and better display quality. 2. When the electric dust increases, the brightness and reflection time of the penetrating area of the present invention rises. The sub-transmission zone reaches the maximum brightness and the driving voltage required for the reflection zone to reach a maximum of 9 degrees is approximately the same, so that the penetrating zone and the counter zone can have similar voltage-controlled brightness performance, and the spacing of the money collecting holes can be Higher brightness and recording quality. 19 1302289 15900twf.doc/g 2 The invention can be driven by the existing driving method. Although the invention has been described in terms of preferred embodiments, it is known to those skilled in the art that Without departing from the scope, when a little change and refinement can be made, the mental depletion is determined by the definition of the application. ^. 4 [Simplified illustration] Figure 1A shows the conventional and Cover a sputum A cross-sectional view of a crystal display panel. A half-transmissive semi-reflective type of θθ/3. FIG. 1 is a schematic view of a pixel unit of the U. FIG. 2 depicts an electric display brightness of a crystal display panel having a single meridian pitch. A split-type liquid, 3A edge shows a cross-sectional view of a half-emission liquid crystal display panel according to a first preferred embodiment of the present invention. Fig. 3B shows an equivalent circuit diagram of the pixel unit of Fig. 3A. - Figure 1 is a graph of the percentage of the preferred embodiment. Figure 5 is a diagram showing a second-peripheral liquid crystal display (four) (four) in accordance with the present invention. "^_ semi-transparent and semi-reflective +, 6A is shown in accordance with the present invention. (4) A cross-sectional view of a semi-transparent liquid crystal display panel of the third preferred embodiment. Fig. 6B is a schematic view of the pixel unit of Fig. 6A. [Description of main component symbols] "10a, 10b · · ray 100: conventional half-through Material reflective disparity display panel 20 1302289 15900twf.doc/g 200, 300, 400: transflective liquid crystal display panel 1100: thin film transistor array substrate 1110, 1310, 2110, 2310 · · substrate 1120, 2120: sweep Sight wiring _ 1130, 2130 : data wiring 1142 : thin film transistor 1144a, 21 44a, 3130a, 4130a: transparent halogen electrodes 1144b, 2144b, 3130b, 4130b: reflective halogen electrodes 1146, 2146, 2148, 3120, 3140, 4120: dielectric layers 1200, 2200: liquid crystal layer 1300: color filter substrate 1320 2320: color filter film 1330, 2330: common electrode layer 2100, 3100, 4100: active device array substrate 2142: active device 2300: opposite substrate 3110: bump metal layer 4110: metal layer 21