TWI301626B - Capacitor use electrode foil - Google Patents

Capacitor use electrode foil Download PDF

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Publication number
TWI301626B
TWI301626B TW95114887A TW95114887A TWI301626B TW I301626 B TWI301626 B TW I301626B TW 95114887 A TW95114887 A TW 95114887A TW 95114887 A TW95114887 A TW 95114887A TW I301626 B TWI301626 B TW I301626B
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Taiwan
Prior art keywords
film
titanium oxide
aluminum
capacitor
oxide film
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TW95114887A
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Chinese (zh)
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TW200644012A (en
Inventor
Koki Tanaka
Tomohito Tanaka
Youichi Matsuzaki
Hiromasa Shoji
Toyoshi Ogura
Masao Kimura
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Nippon Steel Corp
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Priority claimed from JP2005130455A external-priority patent/JP2006310493A/en
Priority claimed from JP2005130457A external-priority patent/JP2006310494A/en
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Publication of TW200644012A publication Critical patent/TW200644012A/en
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Publication of TWI301626B publication Critical patent/TWI301626B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/042Electrodes or formation of dielectric layers thereon characterised by the material
    • H01G9/045Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/042Electrodes or formation of dielectric layers thereon characterised by the material

Description

1301626 九、發明說明: L發明所屬技4軒領域】 技術領域 本發明係有關於一種用於電容器之電極箱,特別係有 5 關於一種靜電容量與漏電流特性優異之電極落。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode case for a capacitor, and more particularly to an electrode drop which is excellent in electrostatic capacitance and leakage current characteristics.

L· mT U 背景技術 一般而言,構成電解電容器之鋁電極羯係在酸水溶液 中對鋁箔施加直流電流或交流電流進行電解蝕刻,於箔表 10面形成多數凹處、擴大表面積後,在處理液中進行陽極氧 化,以於箔表面形成鋁覆膜而作為電極材料使用。增加靜 電容量的方法例如:增加箱的表面積、或使作為介電體之 氧化膜較薄等,而迄今已有對於這些方法的各種研究。 此外,增加氧化膜的介電率也是可增加靜電容量的方 15法,且形成介電率高之氧化鈦膜、氧化欽與氧化銘之複合 φ I化膜以達到高容量化的研究也持續進行中,但目前仍無 法充分地增加靜電容量。 關於增加靜電容量,特開細-224036號公報中對於形 成氧化鈦膜的方法,列舉出CVD法(化學氣相殿積法)、滅鑛 法/合漩膠法、,谷旋膠電泳電極沉積法,但由於法或 極難在㈣後之㈣上成膜,故紐得到充分的靜 电夺里而且退會使漏電流變大。又,上述CVD法或藏鑛 =需^大規模的真空裝置,會有生產性低、製造成本提 π»等門題且’由於u娜法或溶凝膠電泳電極沉積法難 1301626 以形成細緻的氧化物覆膜,故無法得到充分的靜電容量, 而且還會使漏電流變大。 因此,特開2003-257796號公報中對於含有高聚合度之 閥金屬氧化物高分子-芳香族化合物溶劑錯合物進行研 5 究,以改善溶凝膠法。但為了形成氧化膜必須進行熱處理, 此時之揮發性會降低覆膜的細緻度,故無法得到充分的靜 電容量,且無法充分地改善漏電流。 另一方面,以低成本形成氧化鈦膜之方法,已知有如 特開平10-158014號公報、特開2001-294408號公報等之將基 10 材浸潰於添加硼酸至氟鈦酸銨、或氟鈦酸水溶液調整後之 處理液中’使基材表面析出氧化鈦薄膜之方法。在上述液 相沉積法中,由於與基材凹凸或種類無關,故應可於進行 具有複雜形狀之蝕刻後的鋁箔表面上均一地形成氧化鈦 膜,並可期待充分之高電容化。 15 然而,根據本發明人之調查,使用於氟鈦酸銨中添加 硼酸之處理液,在鋁箔表面上析出之氧化鈦膜會有漏電流 較大的問題。 < 電極面積越大、介電體膜厚越薄,電容器的靜電容量 2可得到的容量越大。若為了達到使電容器之靜電容量増= 2〇的目的,藉由液相沉積法使介電體膜以薄厚度成膜,^所 得之氧化鈦膜其膜厚參差不齊會較為明顯,難以控制為〜 又之所需膜厚,而有小孔等缺陷變多的問題。 ‘' C考务明内】 發明揭示 6 1301626 本發明係考慮上述問題點而成者,其目的在於以低成 一種用於電容器之電極箱以及使用該電極ϋ之電容 器,且該電極落具有缺陷少、漏電流小、電容量高之氧化 鈦膜。本發明人專心致力於研究解決上述課題之手段,結 5果电現右將具有結晶大小為2 5η輯下、或非結晶構造之氧 化鈦膜的銘箱使用於電容器用之電㈣,可使靜電容量較 大’且漏電流特性優異。又,本發明人更發現藉由使該氧 化鈦膜中含有(U原子數%以上、25原子數%以下之鋁,可 更增大靜電容量。本發明係根據前述知識而作成者,其要 10 旨如下。 (1) 一種用於電容器之電極落,係由鋁羯構成,且該鋁 箔具有結曰曰大小為2.5nm以下或非結晶構造之氧化鈦膜者。 (2) —種用於電容器之電極箔,係由鋁箔構成,且該鋁 箔具有氧化鋁所形成之覆膜、及結晶大小為2 511111以下或非 15 結晶構造之氧化鈦膜者。 (3) —種用於電容器之電極箔,係由鋁箔構成,且該鋁 箔具有結晶大小為2.5nm以下或非結晶構造之氧化鈦膜、及 鋁與鈦之複合氧化物或混合氧化物中之一者或兩者之覆膜 者。 20 (4)一種用於電容器之電極箔,係由鋁箔構成,且該鋁 箔具有氧化紹所形成之覆膜、鋁與鈦之複合氧化物或混合 氧化物中之一者或兩者之覆膜、及結晶大小為2.5nm以下或 非結晶構造之氧化鈦膜者。 (5)—種用於電容器之電極箔,係於前述(!)〜(4)中任一 7 1301626 項之由氧化鈦所形成之覆膜 子數%以下的鋁者。 ’含有0.1原子數%以上、25原 "V里用於電容器之電極箱,係於前述⑴〜⑷中任一 料ιΓ/鈦所形成之覆m中含有紹,且前賴濃度為ο·1 ’、/以上、25原子數%以下,且前述濃度沿著深度方向 由覆膜表面增加至覆膜内部者。 ()種用於電容恭之電極%,係於前述⑴〜⑷中任一 項之由祕鈦所形成之覆膜巾含有q i原子數%以上、Μ原 10 子數%以下的!s,且前述覆财包含有轉度相異之a層氧 化鈦層者。 (8)種電各裔,係使用(1)〜(乃中任一項之用於電容器 之電極箱者。 【貧方包巧】 實施發明之最佳型態 15 本發明之用於電容器之電極箔係至少具有結晶大小為 2.5nm以下或非結晶質之氧化鈦膜的铭箔。由於氧化鈦之介 電率較使用於習知铭電解電容器之氧化委呂之介電率大,故 :推測被覆氧化鈦之㈣可㈣電解電容||增加靜電容 量。在此所述之具有氧化鈦之覆膜係指鈦含有量為1〇原子 2〇數%以上、35原子數%以下,剩餘成分包含氧原子之覆膜。 雜質可含有氫(U原子數%以上、5原子數%以下,氣〇 ι原子 數%以上、5原子數%以下。 為了使上述氧化鈦成膜,可使用例如液相沉積法。藉 由液相沉積法使氧化鈦在鋁辖上析出之反應,可藉由下= 8 I301626 (1)式所示之水解平衡反應來進行。即,其係氟鈦酸鏔與水 分子反應,會產生氧化鈦與H+離子及F_離子之反應。L· mT U BACKGROUND ART In general, an aluminum electrode constituting an electrolytic capacitor is subjected to electrolytic etching by applying a direct current or an alternating current to an aluminum foil in an aqueous acid solution, forming a large number of recesses on the surface of the foil 10, and expanding the surface area. Anodizing is carried out in the liquid to form an aluminum film on the surface of the foil and used as an electrode material. The method of increasing the electrostatic capacity is, for example, increasing the surface area of the tank or making the oxide film as a dielectric thin, etc., and various studies on these methods have hitherto been made. In addition, increasing the dielectric constant of the oxide film is also a method of increasing the electrostatic capacity, and the formation of a high-capacity titanium oxide film, a composite film of oxidized Qin and Oxide to achieve high capacity is also continued. In progress, but still can not fully increase the electrostatic capacity. For the method of forming a titanium oxide film, the method of forming a titanium oxide film is exemplified by a CVD method (chemical vapor deposition method), a perchlorination method, a vortex method, and a glutathion electrophoresis electrode deposition. Law, but because of the law or extremely difficult to form a film on (4) after (4), the New Zealand gets a full amount of static electricity and the leakage will increase the leakage current. In addition, the above-mentioned CVD method or mining method requires a large-scale vacuum device, which has low productivity, a manufacturing cost, and the like, and is difficult to form due to the u Na method or the lyotropic gel electrode deposition method 1301626. Since the oxide film is formed, a sufficient electrostatic capacitance cannot be obtained, and the leakage current is also increased. For this reason, JP-A-2003-257796 discloses a valve metal oxide polymer-aromatic compound solvent complex containing a high degree of polymerization to improve the sol gel method. However, in order to form an oxide film, heat treatment is required, and the volatility at this time lowers the fineness of the film, so that a sufficient electrostatic capacity cannot be obtained, and leakage current cannot be sufficiently improved. On the other hand, a method of forming a titanium oxide film at a low cost is known, for example, in which a base material is impregnated with boric acid to ammonium fluorotitanate or the like, or the like. A method of depositing a titanium oxide film on the surface of a substrate in a treatment liquid adjusted with an aqueous solution of fluorotitanic acid. In the liquid phase deposition method, the titanium oxide film can be uniformly formed on the surface of the aluminum foil after etching having a complicated shape, regardless of the unevenness or the type of the substrate, and sufficient capacitance can be expected. However, according to the investigation by the inventors of the present invention, the use of a treatment liquid containing boric acid in ammonium fluorotitanate causes a problem that the titanium oxide film deposited on the surface of the aluminum foil has a large leakage current. < The larger the electrode area is, the thinner the dielectric film thickness is, and the larger the capacitance of the capacitor can be obtained. In order to achieve the electrostatic capacity of the capacitor 増 = 2 ,, the dielectric film is formed into a thin film by a liquid deposition method, and the film thickness of the obtained titanium oxide film is relatively uneven, which is difficult to control. In order to reduce the required film thickness, there are problems such as small holes and the like. In the present invention, the present invention has been made in view of the above problems, and its object is to reduce the electrode case for a capacitor and the capacitor using the electrode, and the electrode has defects. A titanium oxide film with low leakage current and high capacitance. The present inventors have devoted themselves to researching and solving the above-mentioned problems, and the electrode of the titanium oxide film having a crystal size of 2 5 n or a non-crystalline structure is used for capacitors (4). The electrostatic capacity is large' and the leakage current characteristics are excellent. Furthermore, the present inventors have found that the titanium oxide film contains (amount of U atom% or more and 25 atom% or less of aluminum), and the electrostatic capacity can be further increased. The present invention is based on the aforementioned knowledge and is required to be The purpose of the present invention is as follows: (1) An electrode for a capacitor is composed of an aluminum crucible, and the aluminum foil has a titanium oxide film having a crucible size of 2.5 nm or less or an amorphous structure. The electrode foil of the capacitor is made of aluminum foil, and the aluminum foil has a film formed of alumina and a titanium oxide film having a crystal size of 2,511,111 or less or a non-15 crystal structure. (3) An electrode for a capacitor The foil is made of an aluminum foil, and the aluminum foil has a film of a titanium oxide film having a crystal size of 2.5 nm or less or an amorphous structure, and a film of one or both of a composite oxide or a mixed oxide of aluminum and titanium. 20 (4) An electrode foil for a capacitor, which is composed of an aluminum foil, and the aluminum foil has a film formed of oxidized, a composite oxide of aluminum and titanium, or a film of a mixed oxide And the crystal size is below 2.5 nm or not A titanium oxide film having a crystal structure. (5) An electrode foil for a capacitor, which is less than or equal to or less than a percentage of a film formed of titanium oxide in any of the above 7 to 161626 of (!) to (4) Aluminium. 'The electrode box containing 0.1 atom% or more and 25 original "V for capacitors is contained in the m formed by any of the above materials (1) to (4), and the concentration is It is ο·1 ', / or more, 25 atomic% or less, and the concentration is increased from the surface of the film to the inside of the film along the depth direction. () The type of electrode used for the capacitor is in the above (1) to (4). Any of the coated towels formed of the secret titanium contains ?s of qi atom% or more and xenon 10% or less, and the above-mentioned wealth includes a layer of titanium oxide having different degrees of rotation. 8) The various types of electricity are used, and the electrode case for capacitors is used in any of (1) to (none of them). [Positive party package] The best mode for carrying out the invention 15 The electrode for capacitor of the present invention The foil is a foil having at least a titanium oxide film having a crystal size of 2.5 nm or less or an amorphous material. The oxidation rate of the oxidation capacitor used in the Ximing Electrolytic Capacitor is large, so it is presumed that (4) can be coated with titanium oxide (IV) Electrolytic Capacitor||Increase the electrostatic capacity. The film having titanium oxide described herein means that the titanium content is 1〇. The atom contains 2% or more and 35 atom% or less, and the remaining component contains a film of an oxygen atom. The impurity may contain hydrogen (U atom% or more, 5 atom% or less, gas atom% or more, and 5 atomic number) In order to form the above titanium oxide film, for example, a liquid phase deposition method can be used. The reaction of precipitating titanium oxide on aluminum by a liquid deposition method can be represented by the following formula = I301626 (1) The hydrolysis is carried out by an equilibrium reaction, that is, the reaction of strontium fluorotitrate with water molecules produces a reaction of titanium oxide with H+ ions and F_ ions.

TiF62>2H2〇㈡Ti02+4H++6F …(I) 在此’藉由添加可使式(I)之平衡反應進行至右側之活 5 化劑,可析出氧化鈦。 也有如特開2003-224036號公報及特開2003-257796號 公報所揭不,使用硼酸作為可使式⑴之水解平衡反應進行 至右側之活化劑的方法。然而,若使用硼酸作為活化劑, 如蝻所述,所得之氧化鈦膜之漏電流較大,為不具實用性 1〇之覆膜。因此,解析該覆膜時,無論何種處理條件,所形 成之氧化鈦之結晶大小皆會成長超過2 5nm。原因雖不明 眘,但氧化鈦之結晶大小一旦大於2 5nm,則很明顯地漏電 :特性會顯著惡化。因此,為了製作出漏電流特性優異的 15電極泊,須被覆具有結晶大小為2.5nm以下或非結晶質構造 之氧化鈦,右可製作出具有上述構造之氧化鈦,則其成膜 方法並不限定於液相沉積法。 本發明人調查財種條件所形成之氧化鈦,結果發 現^在1()〜健之溫度下,製修W12_之氟欽酸録 水溶液,並將基材之㈣浸潰於該水溶液中,在基材表面 20析出氧化鈦,可得到具有上述構造之氧化鈦。在本發明中, 使式(I)進行至氧化鈦析出側之活化劑係從基材之銘箱中溶 2之_子。即’本發明之處理液係於氟鈦_水溶液中 溶解紹離子之液。藉由該處理液中之紹離子產生作用,可 於基材表面析出結晶大小為25nm以下或非結晶質之氧化 9 1301626 鈦0 …上述處理液之pH值以4〜7為佳,以5〜6更佳。其理由 係田處理液之pH值小於斗日夺,雖可製作出完整的膜 ,但所得TiF62>2H2〇(2)Ti02+4H++6F (I) Here, titanium oxide can be precipitated by adding an equilibrium reaction of the formula (I) to the right side. There is also a method in which boric acid is used as an activator which can carry out the hydrolysis equilibrium reaction of the formula (1) to the right side, as disclosed in JP-A-2003-257036 and JP-A-2003-257796. However, if boric acid is used as the activator, as described in ruthenium, the obtained titanium oxide film has a large leakage current and is a film which is not practical. Therefore, when the film is analyzed, the crystal size of the formed titanium oxide grows more than 25 nm regardless of the processing conditions. Although the reason is not clear, the crystal size of titanium oxide is more than 25 nm, and the leakage is markedly remarkable: the characteristics are significantly deteriorated. Therefore, in order to produce a 15 electrode perforation having excellent leakage current characteristics, it is necessary to coat titanium oxide having a crystal size of 2.5 nm or less or an amorphous structure, and the titanium oxide having the above structure can be produced right, and the film formation method is not Limited to liquid deposition. The present inventors investigated the titanium oxide formed by the financial conditions, and found that the W12_ fluocyanate aqueous solution was prepared at a temperature of 1 () to 健, and the substrate (4) was immersed in the aqueous solution. Titanium oxide is deposited on the surface of the substrate 20 to obtain titanium oxide having the above structure. In the present invention, the activator which is carried out to the side of the titanium oxide precipitation of the formula (I) is dissolved in the oven of the substrate. Namely, the treatment liquid of the present invention is a solution in which a solution of sulphur ions is dissolved in a fluorotitanium-aqueous solution. By the action of the ions in the treatment liquid, an oxide having a crystal size of 25 nm or less or an amorphous substance can be precipitated on the surface of the substrate. 91301626 Titanium 0 The pH of the treatment liquid is preferably 4 to 7 and 5 to 7. 6 is better. The reason is that the pH of the field treatment solution is less than that of the bucket, although a complete film can be produced, but the result

之電容器可能會難以得到所需之電容量;而當處理液之PH 5值大於7日守,處理液容易變得不安定,在處理液中會析出氧 化鈦旋木物f有難以在基材表面形成均一的膜的問題。 心里液pH值的调整可以_般習知的方法進行,而本發明之 鲁#出反應之其他條件則無特職定。又,由於隨著處理液 的酿度或氣鈦酸銨濃度的增加,氧化鈦成膜速度會增加, 為了被復所*之厚度氧化鈦,可適當地設定反應溫度或 反應時間。 又’本發明之用於電容器之電極箱的另一態樣係至少 f有氧化1呂所形成之覆膜、及結晶大小為2.5nm以下或非結 構k之氧化鈦的心|。在此所述之具有氧化紹之覆膜係 15指銘含有量為10原子數%以上、45原子數%以下 ,剩餘成分 • 包含氧原子之覆膜。雜質可含有氫0.1原子數%以上、5原子 數%以下,⑽原子數%以上、5原子數%以下。在本發明 中,已知藉由組合氧化鈦膜與氧化紹膜,可得到漏電流特 性優異之覆膜。為了在銘箱上形成上述覆膜構造,可將前 迷氧化鈦膜形成方法與習知銘猪之陽極氧化處理相組合。 乳化鈦膜與氧化I呂膜之上下關係無特別限定,例如,可在 使用陽極氧化法於紹猪表面生成氧化紹後,使用液相沉積 2於氧脑上形魏化鈦膜,接著進行加熱處理 。此時, 覆膜構造係從紹絲材側開始依序為銘/氧化銘/氧化欽。由 1301626 於各層之適當膜厚係兼顧漏電流特性與 故適宜設定即可。 靜電容量而決定 5The capacitor may be difficult to obtain the required capacitance; and when the pH value of the treatment liquid is greater than 7 days, the treatment liquid tends to become unstable, and the titanium oxide rotary substance f is precipitated in the treatment liquid. The problem of forming a uniform film on the surface. The adjustment of the pH of the heart fluid can be carried out by a conventional method, and the other conditions of the reaction of the present invention are not specific. Further, as the degree of the treatment liquid or the concentration of the ammonium titanate increases, the film formation rate of titanium oxide increases, and the reaction temperature or reaction time can be appropriately set in order to obtain the thickness of the titanium oxide. Further, another aspect of the electrode case for a capacitor of the present invention is that at least f has a film formed by oxidizing 1 liter, and a core having a crystal size of 2.5 nm or less or titanium oxide having a non-structural k. The coating film having the oxide content described above has a content of 10 atom% or more and 45 atom% or less, and the remaining component contains a film of an oxygen atom. The impurities may contain 0.1 atom% or more and 5 atom% or less of hydrogen, and (10) atomic% or more and 5 atom% or less. In the present invention, it is known that a film having excellent leakage current characteristics can be obtained by combining a titanium oxide film and an oxide film. In order to form the above-mentioned film structure on the name box, the method of forming the former titanium oxide film can be combined with the anodizing treatment of the conventional Ming pig. The relationship between the emulsified titanium film and the oxidized I ru film is not particularly limited. For example, after the oxidation is formed on the surface of the porcine pig by anodizing, the titanium film is formed by liquid deposition on the oxygen brain, followed by heating. deal with. At this time, the film structure is sequentially from the side of the wire material to the name / oxidation Ming / oxidation. The appropriate film thickness of each layer in 1301626 can be set as appropriate in consideration of the leakage current characteristics. Determined by electrostatic capacity 5

陽極氧化處理用電解液可舉例如:蝴酸錢、鱗酸、已 二酸、乙二酸、硫酸、癸二酸、或含有一種或兩種以上銨 鹽之溶液’但並非限定於料溶液。對於陽轉化處理條 件,可以習知條件進行,並無特別限定。例如,可將己二 酸水溶液作為電解液,設定陽極氧化電壓以使氧化膜厚Z 成長至10nm左右。 10 15The electrolyte for anodizing treatment may, for example, be a sulphuric acid, squaric acid, adipic acid, oxalic acid, sulfuric acid, sebacic acid or a solution containing one or two or more ammonium salts, but is not limited to a solution. The conditions for the cation conversion treatment can be carried out under known conditions, and are not particularly limited. For example, an adipic acid aqueous solution can be used as an electrolytic solution, and an anodic oxidation voltage can be set so that the oxide film thickness Z is increased to about 10 nm. 10 15

20 又,本發明之用於電容器之電極箔之另一態樣係至少 具有結晶大小為2.5mn以下或非結晶構造之氧化鈦膜、及鋁 與鈦之複合氧化物或混合氧化物中之一者或兩者之覆膜的 鋁箔。在此所述之具有鋁與鈦之複合氧化物或混合氧化物 中之一者或兩者之覆膜係指鈦含有量為1〇原子數%以上、 35原子數%以下,|呂含有量為〇1原子數%以上、25原子數% 以下’剩餘成分包含氧原子之覆膜。雜質可含有氫〇1原子 數%以上、5原子數%以下,氟〇1原子數%以上、5原子數% 以下。藉由組合氧化鈦膜與鋁_鈦複合氧化物或混合氧化 物,很明顯地可形成漏電流較少的覆膜。例如,在藉由液 相沉積法於鋁箔表面上形成氧化鈦膜後,藉由以陽極氧化 電壓3V進行陽極氧化處理、接著施行加熱處理,形成鋁_ 鈦複合氧化物層。覆膜構造從鋁箔基材側開始為:鋁/鋁-鈦複合氧化物/氧化鈦。由於各層之適當膜厚係兼顧漏電流 特性與靜電容量而決定,故適宜設定即可。又,各層間的 上下關係也無特別限定。 11 1301626 又,本發明之用於電容器之電極箔之另一態樣係至少 具有氧化鋁所形成之覆膜、鋁與鈦之複合氧化物或混合氧 化物中之一者或兩者之覆膜、及結晶大小為2511111以下或非 結晶構造之氧化鈦膜的鋁箔。已知藉由氧化鈦膜、鋁鈦複 5合氧化物或混合氧化物及氧化鋁膜之3層構造,可形成漏電 流特性優異的覆膜。例如,在藉由液相沉積法於鋁箔表面 上形成氧化鈦膜後,以60V的陽極氧化電壓進行陽極氧化處 理,接著施行加熱處理。覆膜構造從鋁箔基材側開始形成 為:鋁/氧化鋁/鋁-鈦複合氧化物/氧化鈦。由於各層之適當 10膜厚係兼顧漏電流特性與靜電容量而決定,故適宜設定即 可。又,各層間的上下關係也無特別限定。 上述具有鋁與鈦之複合氧化物或混合氧化物之一者或 兩者的覆膜,可藉由將前述被覆氧化鈦之鋁箔進行陽極氧 化及熱處理而得。藉由陽極氧化條件或熱處理條件,可分 15別製作出氧化鈦膜與複合或混合氧化物覆膜之2層構造,及 氧化鈦膜、複合或混合氧化物覆膜、氧化鋁膜之3層構造。 熱處理溫度以650 C以下為佳,以250〜600°C更佳。小 於2〇〇°c可能會無法充分確認熱處理效果,大於65(rc則會 使靜電容量變低。熱處理時的環境氣體以真空中、氮或氬 2〇等惰性氣體中為佳。要製造真空環境,可從大氣環境中開 始减壓,也可以惰性氣體置換環境氣體後進行減壓。 此外,所使用之鋁箔並無特別限定,可使用例如鋁純 度99.99以上之1N99、鋁純度99.90以上之1N90等之高純度 鋁箔(上述號碼為鋁協會之合金號碼),該等高純度鋁箔可使 12 1301626 5Further, another aspect of the electrode foil for a capacitor of the present invention is one having at least a titanium oxide film having a crystal size of 2.5 nm or less or an amorphous structure, and a composite oxide or mixed oxide of aluminum and titanium. The aluminum foil of the film or both. The film having one or both of a composite oxide or a mixed oxide of aluminum and titanium as described herein means that the titanium content is 1 〇 atomic% or more and 35 atomic% or less, and the ur content is It is a film in which the remaining component contains an oxygen atom in the case of 〇1 atom% or more and 25 atom%% or less. The impurities may contain hydroquinone 1 atom% or more and 5 atom% number or less, and fluoroquinone 1 atom% or more and 5 atom% or less. By combining the titanium oxide film with the aluminum-titanium composite oxide or the mixed oxide, it is apparent that a film having a small leakage current can be formed. For example, after a titanium oxide film is formed on the surface of an aluminum foil by a liquid phase deposition method, an aluminum-titanium composite oxide layer is formed by anodizing treatment at an anodization voltage of 3 V followed by heat treatment. The film structure is from the side of the aluminum foil substrate: aluminum/aluminum-titanium composite oxide/titanium oxide. Since the appropriate film thickness of each layer is determined by both the leakage current characteristics and the electrostatic capacitance, it may be appropriately set. Further, the vertical relationship between the layers is not particularly limited. 11 1301626 Further, another aspect of the electrode foil for a capacitor of the present invention is a film having at least one of a film formed of alumina, a composite oxide of aluminum and titanium, or a mixed oxide or both. And an aluminum foil having a crystal size of 2511111 or less or a titanium oxide film having an amorphous structure. It is known that a three-layer structure of a titanium oxide film, an aluminum-titanium complex oxide, a mixed oxide, and an aluminum oxide film can form a film having excellent leakage current characteristics. For example, after a titanium oxide film is formed on the surface of an aluminum foil by a liquid phase deposition method, anodization treatment is performed at an anodization voltage of 60 V, followed by heat treatment. The film structure was formed from the aluminum foil substrate side as aluminum/aluminum oxide/aluminum-titanium composite oxide/titanium oxide. Since the appropriate thickness of each layer is determined by taking into account the leakage current characteristics and the electrostatic capacitance, it is preferable to set it. Further, the vertical relationship between the layers is not particularly limited. The film having one or both of a composite oxide or a mixed oxide of aluminum and titanium can be obtained by subjecting the aluminum foil coated with titanium oxide to anodization and heat treatment. By anodizing conditions or heat treatment conditions, a two-layer structure of a titanium oxide film and a composite or mixed oxide film can be prepared, and a titanium oxide film, a composite or mixed oxide film, and a three-layer aluminum oxide film can be formed. structure. The heat treatment temperature is preferably 650 C or less, more preferably 250 to 600 ° C. Less than 2 〇〇 °c may not fully confirm the heat treatment effect, and greater than 65 (rc will make the electrostatic capacity low. The ambient gas during heat treatment is preferably an inert gas such as vacuum, nitrogen or argon.) In the environment, the pressure can be reduced from the atmosphere, and the atmosphere can be decompressed by replacing the atmosphere with an inert gas. The aluminum foil to be used is not particularly limited, and for example, 1N99 having an aluminum purity of 99.99 or more and 1N90 having an aluminum purity of 99.90 or more can be used. Such high-purity aluminum foil (the above number is the alloy number of the aluminum association), the high-purity aluminum foil can make 12 1301626 5

10 用於电谷為。此外,也可為紹燒結體。關於麵刻,並不限 定於粗化處理的程度。x,所使用之荡厚雖無特別限定, =宜的厚度為20〜15〇μπι左右。此係由於若⑽厚過薄則 曰降低生紐,過相會使單位質量之靜電容量變低。 此外,本發明之用於電容器之電極落係至少具有氧化 鈦版’且含有添加元素飢!原子數%以上、25原子數%以 Ζ。在此所述之具有氧化鈦之覆膜仙鈦含有量為10原 *上、35原子數%以下,剩餘成分包含氧原子之覆 膜。雜質可含有氫0.1原子數%以上、5原子數%以下。 1510 is used for electricity valleys. In addition, it can also be a sintered body. Regarding the face, it is not limited to the degree of roughening. x, the thickness of the thickness used is not particularly limited, and the thickness is preferably about 20 to 15 〇 μπι. This is because if (10) is too thin, the 曰 reduces the nucleus, and the over-phase makes the electrostatic capacity per unit mass lower. Further, the electrode for a capacitor of the present invention has at least a titanium oxide plate and contains an additive element hungry! The atomic number is more than %, and the atomic number is 25%. Here, the film having a titanium oxide content of titanium oxide is 10 or more, 35 atom% or less, and the remaining component contains an oxygen atom. The impurities may contain 0.1 atom% or more and 5 atom% or less of hydrogen. 15

由於氧化鈦係高介電率物質,於電容器電極表面形成 ,化鈦膜時’則氧化鈦會作用為高介電體,而可得到高電 谷里的電容ϋ。形成氧化鈦膜的厚度越薄越可得到高容量 的電容器,但也會增加孔隙等缺陷,故厚度以〇1帅以上、 〇.5_以下為佳,以0.bm以上、〇.3_以下更佳。又,藉由 於氧化鈦膜中含有0.1原子數%〜25原子數%的八丨,可得到 介電率更高的覆膜。本發明人藉由以下所述之分子軌道計 算發現:於氧化鈦膜中含有A1可提高介電率,因此完成本 發明。在本發明中,為了調查各種添加元素對於氧化鈦膜 "電率的影響’如第1表所示使用Gaussian 98程式之Hartre 20 e-Focl°^算出模型分子的電子極化率及振動極化率。所使 用之基礎函數係記載於“gaussian basis sets for molecular calculations ,S· Hujinaga (eds·),Elsevier(1984)之 split valence plus polarization等級者。從第1表所示之計算結果可 知··來自電子極化之介電率與在此所研討之添加元素種類 13 1301626 無關,幾乎皆成一定。另一方面,可知來自振動極化之介 電率若A1原子以-Al(OH)2之型態存在於氧化鈦膜中,則介 電率會大幅增大。即,若A1原子以-Al(OH)2之狀態存在於 氧原子與鈦原子於氧化鈦中形成之網路構造中,則與其他 5 元素之情況相比較,振動極化率會變大。此係添加A1於氧 化鈦膜可提昇介電率效果的原因。 1301626 第1表分子執道法之電子極化率與振動極化率的計算值 (以原子數規格化之值)Since the titanium oxide is a high dielectric material, it is formed on the surface of the capacitor electrode, and when the titanium film is formed, the titanium oxide acts as a high dielectric, and a high capacitance in the valley is obtained. The thinner the thickness of the titanium oxide film is, the higher the capacity of the capacitor can be obtained, but the defects such as voids are also increased. Therefore, the thickness is preferably 帅1 or more, 〇.5_ or less, and more preferably 0.bm or more, 〇.3_ The following is better. Further, by containing from 0.1 atomic% to 25 atomic % of barium oxide in the titanium oxide film, a film having a higher dielectric constant can be obtained. The present inventors have found that the inclusion of A1 in the titanium oxide film improves the dielectric constant by the molecular orbital calculation described below, and thus completed the present invention. In the present invention, in order to investigate the influence of various additive elements on the titanium oxide film "electricity", the electron polarizability and vibration pole of the model molecule were calculated using the Gaussian 98 program Hartre 20 e-Focl ° as shown in Table 1. Rate. The basic functions used are described in "Gussian basis sets for molecular calculations, S. Hujinaga (eds.), Elsevier (1984). The results of the calculations shown in Table 1 are known from the electronics. The dielectric constant of polarization is almost independent of the additive element type 13 1301626 studied here. On the other hand, it can be seen that the dielectric constant from vibration polarization is the type of -Al(OH)2 of A1 atom. When present in the titanium oxide film, the dielectric constant is greatly increased. That is, if the A1 atom is present in the network structure in which the oxygen atom and the titanium atom are formed in the titanium oxide in the state of -Al(OH)2, Compared with the other five elements, the vibrational polarizability will become larger. This is the reason why the addition of A1 to the titanium oxide film can improve the dielectric constant effect. 1301626 Electron Polarization and Vibration Polarization of the No. 1 Molecular Conducting Method Calculated value of the rate (the value normalized by the number of atoms)

模型分子 電子極化率/ 原子數 (xlO'3nm3) 振動極化率/ 原子数 (xlO'3 nm3) OH OH 11 H HO-Ti- 0 -Si-OH II II OH OH 0.71 5.9 OH OH II II HO-Ti- 0 -Zr-OH ll II OH OH 0.60 4.1 OH OH II / HO-Ti- 0 - B II \ OH OH 0.72 4.4 OH OH 1 1 / HO-Ti- 0 - A1 II \ OH OH 0.59 4.5 OH F 1 1 / HO-Ti- 0 -A1 II \ OH F 0.64 10.6 OH OH 1 1 ll HO-Ti- 0 -Si-OH 1 1 ll OH OH 0.66 4.8 15 1301626 由於藉由如上所述之添加A1,可使所得之氧化鈦膜介 電率變大,故即使不使覆膜厚度變薄,也可得到所需之電 容器容量。因此,對於以液相沉積法形成氧化鈦膜之時, 可解決覆膜厚度較薄則所得之氧化鈦膜厚度參差不齊程度 5 較大、小孔等缺陷較多等問題。 為了形成上述覆膜,可使用液相沉積法於八丨箔表面上 形成氧化鈦膜。藉由液相沉積法於鋁箔上析出氧化鈦之反 應依循下面(I)式所示之水解平衡反應來進行。即,氟鈦酸 叙與水分子反應,會產生氧化鈦與H+離子及離子之反應。 0 TiF62+2H2〇㈡Ti〇2+4H++6F …(I) 在此,藉由添加A1離子作為可使式⑴之平衡反應進行 至右側之活化劑,可析出氧化鈦。 15Model Molecular Electron Polarizens / Atomic Number (xlO'3nm3) Vibrational Polarizability / Atomic Number (xlO'3 nm3) OH OH 11 H HO-Ti- 0 -Si-OH II II OH OH 0.71 5.9 OH OH II II HO-Ti- 0-Zr-OH ll II OH OH 0.60 4.1 OH OH II / HO-Ti- 0 - B II \ OH OH 0.72 4.4 OH OH 1 1 / HO-Ti- 0 - A1 II \ OH OH 0.59 4.5 OH F 1 1 / HO-Ti- 0 -A1 II \ OH F 0.64 10.6 OH OH 1 1 ll HO-Ti- 0 -Si-OH 1 1 ll OH OH 0.66 4.8 15 1301626 Since A1 is added as described above Since the dielectric constant of the obtained titanium oxide film can be increased, the required capacitor capacity can be obtained without making the thickness of the film thin. Therefore, when the titanium oxide film is formed by the liquid phase deposition method, it is possible to solve the problems that the thickness of the titanium oxide film obtained by the film thickness is small, the thickness of the titanium oxide film is large, and the defects such as small holes are large. In order to form the above film, a titanium oxide film can be formed on the surface of the gossip foil by liquid deposition. The reaction of depositing titanium oxide on the aluminum foil by the liquid phase deposition method is carried out in accordance with the hydrolysis equilibrium reaction shown by the following formula (I). That is, the reaction of fluorotitanate with water molecules produces a reaction between titanium oxide and H+ ions and ions. 0 TiF62 + 2H2 〇 (2) Ti 〇 2+ 4H + + 6F (I) Here, titanium oxide can be precipitated by adding an A1 ion as an activator which can carry out the equilibrium reaction of the formula (1) to the right side. 15

20 在本發明中,氟鈦酸銨水溶液以0.01mol/l以上、 〇.5mol/l以下為佳。雖然即使氟鈇酸銨水溶液之濃度小於 O.Olmol/卜也可形成氧化鈦膜,但覆膜之成膜速度較遲, 生產ΙΆ低。另-方面,當I鈥酸銨水溶液之濃度大於 0.5molA日守’氧化鈦粒子容易在水溶液中呈粉狀析出,難以 在A1箔基材上得到均_厚度的氧化欽膜。 ,I處理液之pH值以3〜8為佳,以5〜6更佳。其理由 系田处里液之pH值小於3時,雖可製作出完整的膜,但所得 之私今叩可此會難以得到所需之電容量;而當處理液之仲 值大飾π ’處理液容易變得不安定,在處理液中會析出氧 是木物f有難以在基材表面形成均一的膜的問題。 处夜pH值的。周整可以一般習知的方法進行,而本發明之 16 1301626 析出反應之其他條件則無特別限定。 將AUI基材浸漬於上述氟鈦酸錢水溶 面上析出〜厚度之氧化欽膜 土才= 5 以 _才可使用例如銘純度99.99以上之屯度簡 以上之1N90專之尚純度紹箱(上述號碼為紐協會之合金號 碼),該等高純度銘ϋ可使用於電容器。此外,也可為紹燒 結體。關於姓刻,並不限定於粗化處理的程度。浸= 之上述處理液的溫度或浸潰時間可適當地設定,但處 理液之溫度以常溫〜贼之間為佳,浸潰時間㈣分〜⑽ !〇 分為佳。 對於添加A1於已成膜之氧化鈦膜中的方法,並 限定。 藉由離子注人法等從氧化輯表面注人卿子的方 法,也可添加A1於氧化鈦膜。藉由離子注入法,根據注入 15之A1離子之離子注入量,可添加所需濃度之ai至氧化銳膜 中,並藉由注入能量的控制,可控制氧化鈦膜中ai濃度之 深度方向分布為所需之分布狀態。 可以低成本製造之方法也可藉由以陽極氧化處理使以 原子從基材之_擴散至氧化鈦膜的方法,將娜加於氧 化鈦膜中。即,於使用液相沉積法形成氧化欽膜之銘箱表 面,以以下所述之方法施行陽極氧化處理。 陽極氧化處理用電解液可為例如··硼酸銨、鱗酸、己 二酸、乙二酸、硫酸、癸m含有—種或兩種以上錢 鹽之溶液,但並非限定於該等溶液。 17 1301626 ”在陽極氧化處理過財,可藉由在陽極氧化處理用電 解液中將电虔施加於八!箱基材,在A1箱基材與氧化鈦膜中 間形成氧化鋁層。 , a料陽極氧化處理之設定溫度、施加電壓等無特別規 ①1以自知條件進行處理。例如,將陽極氧化處理液之 溫纽定為sot〜帆,將,〜彻之範_電塵施加 於A1、泊。2通電使流通八丨箔之電流密度為〇·ΐηΑ/^2〜 # 尸/CI11之定值,在A1箔基材與上述氧化鈦膜間成長陽 ★氧化膜藉由控制通電之電流密度,可調整從基材溶出 10之A1離子量,而可調整氧化鈦膜中之ai濃度。 隨著陽極氧化膜的成長,電壓與通電時間會增加,但 由於^陽極氧化膜厚與電壓間會有比例關係,故可知藉由 監控電壓可得到所需之陽極氧化膜厚。施加電壓之值在達 到對應陽極氧化膜厚度1〇nm〜5〇〇腿之值的階段,控制電 15 £為疋’亚保持一定時間。藉由該保持時間,可得到之 • ⑬膜f氧化鈦膜中之A1濃度分布會在陽極氧化膜側為高濃 度、氧化鈦膜表面側為低濃度,且從氧化鈦膜表面至氧化 减與陽極氧化層之界面,A1濃度分布成傾斜狀態 。可設 定上述保持時間使氧化鈦財^A1濃度分布成所需之分 20布,雖無特別規定,但可保持例如齡〜齡。 、又’糟由改變陽極氧化中之電流密度,該氧化鈦層會 成為^有!g浪度相異之2層氧化鈦層所構成之覆膜構 造。糟由使氧化鈦膜中之…濃度分布為離基材側越近、Μ 滚度越高,可提高氧化鈦膜與基材之接著度。例如,藉由 18 1301626 將陽極氧化之電流密度設定為lmA/cm2〜10mA/cm2,於氧 化鈦膜之基材側界面附近製作八丨濃度為1〇原子數%〜25原 子數%之高A1濃度層,接著,藉由將陽極氧化之電流密度 設定為1 OmA/cm2〜3OmA/cm2,在剩下的氧化鈦膜表面為止 5的區域形成A1濃度為〇.1原子數%〜10原子數%的低A1濃度 層。上述1¾ A1濃度層之厚度為1〇腿〜5〇nm,以i〇nm〜3〇nm 更佳。 最後’將上述施行陽極氧化後之具有氧化鈦之鋁箔加 熱處理’得到電極箔。陽極氧化後之熱處理溫度以4〇〇〇c以 10下為佳,以2〇〇〜400°C更佳。小於200°c時可能會有無法確 認熱處理效果之情況發生,大於4〇〇。〇時則可能會降低靜電 容ϊ。熱處理時之環境氣體以真空中或氮、氬等惰性氣體 中為佳。要製造真空環境,可從大氣環境中開始減壓,也 可以惰性氣體置換環境氣體後進行減壓。藉由該加熱處 15理,可不變化氧化鈦膜中之A1濃度及其分布狀態。 使用上述具有包含A1作為添加物之氧化鈦膜的鋁箔作 為陽極,可作為電容器。此外,對於電解質或陰極並無特 別限定,可適當選擇後使用。 實施例1 20 如下所述,使用各種處理液成膜後,評價靜電容量、 漏電流及結晶大小。 處理液、處理條件及結果等如第2〜4表所示。基材使 用未實施餘刻加工之未處理的AU|(1N99)。氧化欽成膜反 應之處理液卿備⑴縣加、⑵添加砸於氟鈦酸銨水溶 19 1301626 液之兩種類。對於⑴之情況,處理液為於01M(m〇1/l)氣欽 酸銨水溶液中加入氨水,將pH調整為3、4、5、6、7、8。 對於(2)之情況,處理液係使用〇顧氟鈦酸錢水溶液,添加 〇·1Μ硼酸後,加入氨水將pH調整為3、4、5、6、7、8而製 作將基材次潰於以(1)、(2)之條件製作之處理液中5分鐘。 進行陽極氧化時,使用12%己二酸銨水溶液,在溫度8〇。。 下施加預定之電壓60分。進行陽極氧化後,在真空中進行 φ 9〇°C、3〇〇°C、650°C保持3小時的熱處理。 靜電容量使用12%己二酸銨水溶液,ffiLCR量計以 120Hz來測定。漏電流則施加5^^來測定。比較後述為比較 例之實驗Νο·91,藉由以下的基準來進行評價。 靜電容量X 同等於Νο·91或更差 〇 較Νο·91增加1倍〜ι ·5倍 15 ◎ 較Νο·91增加ι·5倍以上 漏電流 X 大於No.91 • 〇 同等於No.91 ◎ 小於No.91 對於薄膜之結晶大小,係將X射線折射測定所得之最大 值之半峰全幅值代入謝樂公式所求得。又,以電子顯微鏡 2〇觀察薄膜之截面構造。 〔實驗Νο·1〜18 ] 吏用0.1Μ之/、氣欽酸叙水溶液作為處理液,以氨水調 ιΡΗ為3、4、5、6、7、8。在常溫下將基材浸潰於處理液 中5分鐘來進行成膜,成膜後進行水洗後風乾。接著在真空 20 ^01626 650°C3小時之熱處理 中進行保持9〇t、300。^、 〔實驗Νο·19〜36 ] :土材以陽極氧化電壓進行陽極氧化,接著將以氨 :調整_、4、5、6、7、8之隨之六敦鈦酸銨水溶液 作為處理液,形成氧化鈦膜。在常溫下將基材浸潰於處理 夜中5刀鐘來進行成膜,成膜後進行水洗後風乾。接著在真 空中進行保持9〇°C、300°C、650°C3小時之熱處理。其結果 如第2表所示。 第2表In the present invention, the aqueous solution of ammonium fluorotitanate is preferably 0.01 mol/l or more and 〇.5 mol/l or less. Although the titanium oxide film can be formed even if the concentration of the aqueous ammonium fluoroantimonate solution is less than 0.1 mol/bu, the film formation speed of the film is later, and the production is low. On the other hand, when the concentration of the aqueous solution of ammonium niobate is more than 0.5 mol A, the titanium oxide particles are easily precipitated in a powder form in an aqueous solution, and it is difficult to obtain an oxide film having a uniform thickness on the A1 foil substrate. The pH of the I treatment solution is preferably 3 to 8 and more preferably 5 to 6. The reason is that when the pH value of the liquid in the field is less than 3, although a complete film can be produced, it is difficult to obtain the required electric capacity; and when the liquid value of the treatment liquid is large, π ' The treatment liquid tends to be unstable, and oxygen is precipitated in the treatment liquid. The wood material f has a problem that it is difficult to form a uniform film on the surface of the substrate. At night pH. The conditioning can be carried out by a conventionally known method, and the other conditions of the precipitation reaction of the 161301626 of the present invention are not particularly limited. The AUI substrate is immersed in the above-mentioned fluorinated titanic acid water-soluble surface to precipitate ~ thickness of the oxidized mulch soil = 5 to _ can be used, for example, the purity of 99.99 or more is more than 1N90 special purity box (the above The number is the alloy number of the New Zealand Association. These high purity inscriptions can be used for capacitors. In addition, it can also be used to burn the knot. Regarding the surname, it is not limited to the extent of the roughening process. The temperature or the immersion time of the above treatment liquid may be appropriately set, but the temperature of the treatment liquid is preferably between normal temperature and thief, and the immersion time (four) minutes to (10) ! A method of adding A1 to a film-formed titanium oxide film is defined. It is also possible to add A1 to the titanium oxide film by a method of injecting a person from the surface of the oxide by an ion implantation method or the like. According to the ion implantation method, according to the ion implantation amount of the A1 ion implanted into the 15th, a desired concentration of ai can be added to the oxide sharp film, and the depth direction distribution of the ai concentration in the titanium oxide film can be controlled by the control of the implantation energy. For the desired distribution state. The method which can be produced at a low cost can also be applied to the titanium oxide film by a method of diffusing atoms from the substrate to the titanium oxide film by anodizing. Namely, an anodizing treatment was carried out by the method described below by forming a surface of an oxidized celite using a liquid deposition method. The electrolytic solution for anodizing treatment may be, for example, a solution of ammonium borate, scalylic acid, adipic acid, oxalic acid, sulfuric acid or hydrazine m, or a solution of two or more kinds of money salts, but is not limited to such solutions. 17 1301626 ” In the anodizing treatment, an aluminum oxide layer can be formed between the A1 box substrate and the titanium oxide film by applying an electric enthalpy to the eight! box substrate in the anodizing treatment electrolyte. The set temperature, the applied voltage, and the like of the anodizing treatment are processed by a known condition without special regulation. For example, the temperature of the anodizing treatment liquid is determined to be sot~sail, and the gas is applied to the A1. 2. The current density of the circulating gossip foil is 〇·ΐηΑ/^2~# corpse/CI11 constant, and the anode is grown between the A1 foil substrate and the above titanium oxide film. Density, the amount of A1 ions eluted from the substrate can be adjusted, and the ai concentration in the titanium oxide film can be adjusted. As the anodized film grows, the voltage and the energization time increase, but due to the thickness of the anodized film and the voltage There is a proportional relationship, so it can be known that the required anodic oxide film thickness can be obtained by monitoring the voltage. The value of the applied voltage reaches the value corresponding to the thickness of the anodized film of 1 〇 nm to 5 〇〇 leg, and the control voltage is 15 £.疋 'Asia keeps a certain time. Borrow The retention time can be obtained. • The A1 concentration distribution in the film of the titanium oxide film is high on the anodic oxide side and low on the surface side of the titanium oxide film, and from the surface of the titanium oxide film to oxidation reduction and anodization. At the interface of the layer, the concentration of A1 is distributed in an inclined state. The above holding time can be set so that the concentration of the titanium oxide can be distributed to a desired fraction of 20 cloth, although it is not particularly specified, but can be kept, for example, aged to aged. By changing the current density in the anodization, the titanium oxide layer becomes a film structure composed of two layers of titanium oxide layers having different wavelengths of g. The concentration of the titanium oxide film is distributed from the substrate. The closer the side is, the higher the rolling degree is, the higher the adhesion between the titanium oxide film and the substrate can be improved. For example, the current density of the anodization is set to lmA/cm2 to 10 mA/cm2 by 18 1301626, which is based on the titanium oxide film. A high A1 concentration layer having an erbium concentration of 1 〇 atomic % to 25 atomic % is prepared in the vicinity of the material side interface, and then the current density of the anodizing is set to 1 OmA/cm 2 to 3 OmA/cm 2 , and the remaining A region of 5 on the surface of the titanium oxide film forms A1 thick It is a low A1 concentration layer of 原子1 atom% to 10 atom%. The thickness of the above 13⁄4 A1 concentration layer is 1〇5~5〇nm, preferably i〇nm~3〇nm. After the anodization, the aluminum foil with titanium oxide is heat-treated to obtain an electrode foil. The heat treatment temperature after the anodization is preferably 4 〇〇〇c, preferably 10 Å to 400 ° C, and less than 200 ° C. There may be cases where the heat treatment effect cannot be confirmed, which is greater than 4 〇〇. When it is 〇, the static capacitance ϊ may be lowered. The ambient gas during heat treatment is preferably in a vacuum or an inert gas such as nitrogen or argon. To create a vacuum environment, The pressure can be reduced from the atmospheric environment, or the ambient gas can be replaced with an inert gas and then decompressed. By the heating, the A1 concentration in the titanium oxide film and its distribution state can be unchanged. An aluminum foil having a titanium oxide film containing A1 as an additive as the anode can be used as a capacitor. Further, the electrolyte or the cathode is not particularly limited and may be appropriately selected and used. Example 1 20 After forming a film using various treatment liquids, the electrostatic capacity, the leak current, and the crystal size were evaluated. The treatment liquid, the treatment conditions, and the results are shown in Tables 2 to 4. The substrate used untreated AU|(1N99) which was not subjected to the finishing process. The treatment solution of the oxidized crystallization film is prepared by (1) county plus (2) adding two kinds of strontium fluorotitanate aqueous solution 19 1301626 liquid. In the case of (1), the treatment liquid was adjusted to pH 3, 4, 5, 6, 7, and 8 by adding ammonia water to an aqueous solution of 01 M (m 〇 1 / 1) of ammonium hexanoate. In the case of (2), the treatment liquid is prepared by disregarding the aqueous solution of fluotitanic acid, adding lanthanum 1 lanthanum borate, and adding ammonia water to adjust the pH to 3, 4, 5, 6, 7, and 8 to produce a substrate. The treatment liquid prepared under the conditions of (1) and (2) was allowed to stand for 5 minutes. For anodization, a 12% aqueous solution of ammonium adipate was used at a temperature of 8 Torr. . A predetermined voltage of 60 minutes is applied. After anodization, heat treatment was carried out in a vacuum at φ 9 〇 ° C, 3 ° C, and 650 ° C for 3 hours. The electrostatic capacity was measured using a 12% aqueous solution of ammonium adipate and a ffiLCR meter at 120 Hz. The leakage current is measured by applying 5^^. The experiment Νο·91 which is described later as a comparative example is compared by the following criteria. The electrostatic capacitance X is equal to Νο·91 or worse 〇 more than Νο·91 is increased by 1 times ~ι ·5 times 15 ◎ ι··91 is increased by ι·5 times or more Leakage current X is greater than No.91 • 〇 is equivalent to No.91 ◎ Less than No. 91 For the crystal size of the film, the full-width half-value of the maximum value obtained by X-ray refraction measurement is obtained by substituting Xie Le formula. Further, the cross-sectional structure of the film was observed by an electron microscope. [Experiment Νο·1~18] ΜUse 0.1Μ/, Qiqin acid aqueous solution as the treatment liquid, and adjust the ammonia to 3, 4, 5, 6, 7, and 8. The substrate was immersed in the treatment liquid at normal temperature for 5 minutes to form a film, and after the film formation, it was washed with water and air-dried. This was followed by maintaining 9 〇t, 300 in a heat treatment at a vacuum of 20 ^ 10 26 650 ° C for 3 hours. ^, [Experiment Νο·19~36 ]: The soil material is anodized with anodizing voltage, and then ammonia solution: _, 4, 5, 6, 7, 8 followed by an aqueous solution of ammonium hexanoate as a treatment liquid Forming a titanium oxide film. The substrate was immersed at room temperature for 5 knives in the night to form a film, and after film formation, it was washed with water and air-dried. Then, heat treatment was carried out in the air at a temperature of 9 ° C, 300 ° C, and 650 ° C for 3 hours. The results are shown in Table 2. Table 2

熱處理 條件 氧化鈦 結晶大小 覆膜構造(狖 鋁箔基材側】 容量Heat treatment conditions Titanium oxide Crystal size Film structure (狖 Aluminum foil substrate side) Capacity

〇◎ ◎ ©〇0〇◎◎◎ 0〇0◎© ◎〇 ο©©© ◎◎◎◎ ◎◎I ◎◎ ®l〇j @01 漏電流 備考 實施例 ΌΜ σ 21 10 1301626 〔實驗Νο·37〜54〕 使用0·1Μ之六氟鈦酸銨水溶液作為處理液,以氨水調 整pH為3、4、5、6、7、8。在常溫下將基材浸潰於處理液 中5分鐘來進行成膜,成膜後進行水洗後風乾。以陽極氧化 5電壓3¥進行陽極氧化後,在真空中進行保持90°C、300°C、 650°C3小時之熱處理。其結果如第3表所示。 〔實驗Νο·55〜72 ) 使用0·1Μ之六氟鈦酸銨水溶液作為處理液,以氨水調 C整pH為3、4、5、6、7、8。在常溫下將基材浸潰於處理液 中5分鐘來進行成膜,成膜後進行水洗後風乾。以陽極氧化 1壓6〇乂進行陽極氧化後,在真空中進行保持90°C、300°C、 C 3 j日寸之熱處理。其結果如第3表所示。 % 22 1301626 第3表 〔戰)2了哪 濃度 BO, 濃度 陽極 氧化 電壓 熱處理 條件〇◎ ◎ ©〇0〇◎◎◎ 0〇0◎© ◎〇ο©©© ◎◎◎◎ ◎◎I ◎◎®l〇j @01 Leakage current test example ΌΜ σ 21 10 1301626 [Experiment Νο· 37 to 54] A 0.1% aqueous solution of ammonium hexafluorotitanate was used as a treatment liquid, and pH was adjusted to 3, 4, 5, 6, 7, and 8 with ammonia water. The substrate was immersed in the treatment liquid at normal temperature for 5 minutes to form a film, and after the film formation, it was washed with water and air-dried. After anodization was carried out by anodizing 5 voltage 3 ¥, heat treatment was carried out in a vacuum at 90 ° C, 300 ° C, and 650 ° C for 3 hours. The results are shown in Table 3. [Experiment Νο·55~72) A 0.1% aqueous solution of ammonium hexafluorotitanate was used as a treatment liquid, and the pH was adjusted to 3, 4, 5, 6, 7, and 8 with ammonia water. The substrate was immersed in the treatment liquid at normal temperature for 5 minutes to form a film, and after the film formation, it was washed with water and air-dried. After anodization was carried out by anodizing at a pressure of 6 Torr, heat treatment was carried out in a vacuum at 90 ° C, 300 ° C, and C 3 j. The results are shown in Table 3. % 22 1301626 Table 3 [War] 2 concentration BO, concentration anodic oxidation voltage heat treatment conditions

氧化鈦 I结晶大小I 覆膜構造(從 在呂·冶基材側)容量變彳卜漏電流 備考Titanium oxide I crystal size I film structure (from the side of Luyeye substrate) change the leakage current

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650〇C L2nm >Q.5nm >Q.5nm >Q.5nm 1.9nm 1.5nm 1.5nm >Q.5nm >Q.5nm >Q.5nm 1.5nm 1.8nm 2.5nm 2.4nm 2.2nm 2.2nm 2.2nm 2.3nm 7小$二々 鋁/鋁-鈦 複合氧化物 /氧化鈦 變化 ◎ 〇650 〇C L2nm > Q.5nm > Q.5nm > Q.5nm 1.9nm 1.5nm 1.5nm > Q.5nm > Q.5nm > Q.5nm 1.5nm 1.8nm 2.5nm 2.4nm 2.2nm 2.2nm 2.2nm 2.3nm 7 small $ 々 aluminum / aluminum - titanium composite oxide / titanium oxide change ◎ 〇

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300°C 65 ^66- jf "όΓ "69" J70. -τΓ "7Γ 1.2nm >Q.5nm >0.5nm >Q.5nm 1.9nm 1.5nm 1.5m >Q.5nm >Q.5nm >Q.5nm 1.5nm _〇=| 〇 皇互互 M. 實施例300°C 65 ^66- jf "όΓ "69" J70. -τΓ "7Γ 1.2nm >Q.5nm >0.5nm >Q.5nm 1.9nm 1.5nm 1.5m >Q.5nm &gt ;Q.5nm > Q.5nm 1.5nm _〇=| 〇皇互互 M. Example

650〇C 1.8nm 2.5nm 2.4nm 2.2nm 2.2nm 2.2nm 2.3nm 7儿5二夕 鋁/氧化鋁 /叙一鈦複 合氧化物/ 氧化鈦 〇 1 互650〇C 1.8nm 2.5nm 2.4nm 2.2nm 2.2nm 2.2nm 2.3nm 7 children 5 夕 铝 aluminum / alumina / Syrian titanium composite oxide / titanium oxide 〇 1 mutual

© ]〇互 Μ ΜI〇L (比較例) 〔實驗N0.73〜90〕 使用0.1M之六氟鈦酸銨水溶液作為處理液,添加〇 lM 蝴酸作為氧化鈦析出活化劑。在常溫下將基材浸潰於處理 液中5分鐘來進行成膜’成膜後進行水洗後風乾。以陽極氧 化電壓60V進行陽極氧化後,在真空中進行保持卯它、3〇〇 C、650 C 3小時之熱處理。其結果如第4表所示。 10 23 1301626 第4表 實驗 No. 處理液條件 陽極 熱處理 條件 氧化鈦 結晶大小 覆膜構造 特性評價 基材 (NH4 )2TiF6 濃度 h3 bo3 濃度 液温 pH 氧化 電壓 (從鋁箔基材 側) 容量 變化 漏電流 變化 備考 73 3 3.0nm 〇 X 74 4 3.1nm 〇 X 75 5 90°C 3.2nm 〇 X 76 6 3.9nm 〇 X 77 7 4.7nm 〇 X 78 8 3.8nm 〇 X 79 3 4.4nm 〇 X 80 4 4.3nm 了儿S二 鋁/氧化 鈦 ◎ X 81 A1箔 0.1M 0.1M 吊 5 60V 300°C 4.6nm ◎ X 82 平坦 6 4.1nm ◎ X 83 7 4.5nm ◎ X 比 84 8 4.8nm 〇 X 較 85 3 6.2nm 〇 X 例 86 4 6.0nm 〇 X 87 5 650〇C 6.3nm 〇 X 88 6 5.3nm 〇 X 89 7 6.5nm 〇 X 90 8 6.0nm 〇 X 91 A1箔 平坦 — - - - 60V 300°C — 三二 鋁/氧化 鋁 $二 ク厶 基準 基準 〔實驗 Νο·91〕 將基材以陽極氧化電壓60V進行陽極氧化處理後,在真 5 空中進行保持300°C3小時之熱處理。其結果如第4表所示。 第2表及第3表所顯示之本發明電極箔具有較比較例優 異的特性,可確認其效果。另一方面,也可確認如第4表所 示之於處理液中添加硼酸而成膜之鋁箔,與比較例比較之 下,其漏電流特性較差。 10 實施例2 A1箔基材使用未實施蝕刻加工之未處理的A1箔 (1N99) 〇 將液相沉積處理液中之氟鈦酸銨濃度設定為 0.05mol/l,於水溶液中加入氨水將pH調整至5.5。處理液之 15 溫度設定為常溫,將A1箔基材浸潰於上述氟鈦酸銨水溶液 24 1301626 中20分鐘,於基材表面上析出約2〇〇nm厚的氧化鈦膜。在本 實施例中,藉由以陽極氧化處理使A1原子從基材之A1箔擴 散至氧化鈦膜的方法,添加A1於氧化鈦膜中,可作為以低 成本製造的方法。 5 陽極氧化處理使用10%己二酸銨水溶液,將液溫設定 為70C ’電流密度設定為〇 lmA/cm2〜5〇mA/cm2。使電流 密度為一定地通電於A1箔基材,則於A1箔基材與上述氧化 φ 鈦膜間會成長陽極氧化膜。藉由控制通電之電流密度,可 調整從基材溶出之A1離子量,並調整氧化鈦膜内之A1濃度。 10 隨著陽極氧化膜的成長,電壓和通電時間會增加,但 由於在陽極氧化膜厚與電壓間會有比例關係,故可知藉由 監控電壓可得到所需之陽極氧化膜厚。在達到對應陽極氧 化膜厚度50nm之值的階段,控制電壓為一定,並保持一定 4間。藉由該保持時間,可得到之覆膜其氧化鈦膜中之Μ 15濃,分布會在陽極氧化膜側為高濃度、氧化欽膜表面側為 • ⑯展度’且從氧化鈦膜表面至氧化鈦膜與陽極氧化層之界 面,A1濃度會呈直線增加而分布成傾斜狀態。又,若使保 持時間為6G分以上,則會使氧化鈦膜中之A1濃度平均。 使氧化鈦膜為高八〗濃度層與低A1濃度層之2層構造 守將同A1;辰度層形成時之陽極氧化電流密度與低^濃度 層I成時之陽極氧化電流密度、及定電廢保持時間設定為 如第6表所示之條件,進行陽極氧化處理。 詳細實施例如第5表及第6表所示。成膜後,評價靜電 ♦里、漏電流及氧化鈦膜中之Al濃度。以X光電子分光分析 25 1301626 法來定量評價氧化鈦膜中之A1濃度分布。 陽極氧化處理後,在真空中加熱至250°C進行熱處理。 使用12%己二酸銨水溶液,用LCR量計以120Hz測定靜 電容量。 5 藉由以下的基準進行評價。 靜電容量X : 2.(^F/cm2以下 〇:大於2.0pF/cm2、10pF/cm2以下 ◎:大於 10pF/cm2© ] 〇 Μ Μ I 〇 L (Comparative Example) [Experiment N0.73 to 90] A 0.1 M aqueous solution of hexafluorotitanate was used as a treatment liquid, and 〇 lM oleic acid was added as a titanium oxide precipitation activator. The substrate was immersed in the treatment liquid at normal temperature for 5 minutes to form a film. After the film formation, the film was washed with water and air-dried. After anodization was carried out at an anodic oxidation voltage of 60 V, heat treatment was carried out in a vacuum for 3 hours, 3 〇〇 C, and 650 C for 3 hours. The results are shown in Table 4. 10 23 1301626 Table 4 Experiment No. Treatment liquid conditions Anode heat treatment conditions Titanium oxide crystal size Film structure characteristics Evaluation Substrate (NH4)2TiF6 Concentration h3 bo3 Concentration Liquid temperature pH Oxidation voltage (from aluminum foil substrate side) Capacity change leakage current Change Preparation 73 3 3.0nm 〇X 74 4 3.1nm 〇X 75 5 90°C 3.2nm 〇X 76 6 3.9nm 〇X 77 7 4.7nm 〇X 78 8 3.8nm 〇X 79 3 4.4nm 〇X 80 4 4.3 Nm S two aluminum / titanium oxide ◎ X 81 A1 foil 0.1M 0.1M hanging 5 60V 300 ° C 4.6nm ◎ X 82 flat 6 4.1nm ◎ X 83 7 4.5nm ◎ X than 84 8 4.8nm 〇X than 85 3 6.2nm 〇X Example 86 4 6.0nm 〇X 87 5 650〇C 6.3nm 〇X 88 6 5.3nm 〇X 89 7 6.5nm 〇X 90 8 6.0nm 〇X 91 A1 foil flat — - - - 60V 300° C — Tri-Aluminum/Alumina $2 ク厶 benchmark [Experiment Νο·91] The substrate was anodized at an anodizing voltage of 60 V, and then kept at 300 ° C for 3 hours in a true 5 air. The heat treatment. The results are shown in Table 4. The electrode foil of the present invention shown in the second and third tables has characteristics superior to those of the comparative examples, and the effects thereof can be confirmed. On the other hand, it was confirmed that the aluminum foil obtained by adding boric acid to the treatment liquid as shown in the fourth table was inferior in leakage current characteristics as compared with the comparative example. 10 Example 2 A1 foil substrate using untreated A1 foil (1N99) which was not subjected to etching processing 〇 The ammonium fluorotitanate concentration in the liquid phase deposition treatment liquid was set to 0.05 mol/l, and ammonia water was added to the aqueous solution to adjust the pH. Adjust to 5.5. The temperature of the treatment liquid 15 was set to normal temperature, and the A1 foil substrate was immersed in the above aqueous ammonium fluorotitanate solution 241301626 for 20 minutes to deposit a titanium oxide film having a thickness of about 2 Å on the surface of the substrate. In the present embodiment, A1 is diffused from the A1 foil of the substrate to the titanium oxide film by anodizing, and A1 is added to the titanium oxide film, which can be produced at a low cost. 5 Anodizing treatment Using a 10% aqueous solution of ammonium adipate, the liquid temperature was set to 70 C' and the current density was set to 〇 1 mA/cm 2 to 5 〇 mA/cm 2 . When the current density is constantly applied to the A1 foil substrate, an anodized film is grown between the A1 foil substrate and the oxidized φ titanium film. By controlling the current density of the energization, the amount of A1 ions eluted from the substrate can be adjusted, and the A1 concentration in the titanium oxide film can be adjusted. 10 As the anodized film grows, the voltage and the energization time increase. However, since there is a proportional relationship between the thickness of the anodized film and the voltage, it is known that the desired thickness of the anodized film can be obtained by monitoring the voltage. At the stage of reaching a value corresponding to the thickness of the anode oxide film of 50 nm, the control voltage is constant and maintained at a certain ratio of four. By this holding time, the ruthenium film in the titanium oxide film of the film can be obtained, and the distribution is high in the anodic oxide film side, and the surface of the oxidized cerium film is •16 spread' and from the surface of the titanium oxide film to At the interface between the titanium oxide film and the anodized layer, the concentration of A1 increases linearly and is distributed in an inclined state. Further, when the holding time is 6 G or more, the A1 concentration in the titanium oxide film is averaged. The titanium oxide film is made of a high-eight layer and a low-layer A1 layer, and the two layers of the structure are the same as A1; the anodizing current density when the layer is formed and the anodizing current density when the layer is low, and The electric waste holding time was set to the conditions shown in Table 6, and anodizing treatment was performed. The detailed implementation is shown in Tables 5 and 6, for example. After the film formation, the electrostatic concentration, the leakage current, and the Al concentration in the titanium oxide film were evaluated. The A1 concentration distribution in the titanium oxide film was quantitatively evaluated by X-ray photoelectron spectroscopy 25 1301626. After the anodizing treatment, heat treatment was carried out by heating to 250 ° C in a vacuum. The electrostatic capacity was measured at 120 Hz using an LCR meter using a 12% aqueous solution of ammonium adipate. 5 Evaluation is performed by the following criteria. Electrostatic capacity X: 2. (^F/cm2 or less 〇: Greater than 2.0pF/cm2, 10pF/cm2 or less ◎: Greater than 10pF/cm2

26 1301626 第5表26 1301626 Table 5

陽極氧化 電流密度 (mA/cm2) 陽極氧化時之 低電壓狀態 保持時間(分) 氧化鈦膜 中之A1濃度 分布狀態 氧化鈦膜 中之A1濃度 (原子數%) 氧化鈦表層 之A1濃度 (原子數%) 氧化鈥/陽極氧化 層界面附近之氧化 鈥層之A1濃度 (原子數%) 靜電 容量 備考 25 60 均一 1 1 1 〇 實施例 20 60 均一 5 5 5 〇 實施例 10 60 均一 10 10 10 ◎ 實施例 10 60 均一 12 12 12 ◎ 實施例 8 60 均一 15 15 15 ◎ 實施例 10 60 均一 10 10 10 ◎ 實施例 18 60 均一 6 6 6 〇 實施例 6 60 均一 20 20 20 ◎ 實施例 5 60 均一 22 22 22 ◎ 實施例 20 60 均一 5 5 5 〇 實施例 18 60 均一 7 7 7 〇 實施例 12 60 均·一 9 9 9 〇 實施例 10 60 均一 13 13 13 ◎ 實施例 10 60 均一 11 11 11 ◎ 實施例 9 60 均一 14 14 14 ◎ 實施例 1 60 均一 25 25 25 ◎ 實施例 0.5 60 均一 30 30 30 X 比較例 0.7 60 均一 28 28 28 X 比較例 40 60 均一 ND ND ND X 比較例 50 60 均一 ND ND ND X 比較例 20 10 傾斜 1 25 ◎ 實施例 25 5 傾斜 0.5 15 ◎ 實施例 5 40 傾斜 10 25 ◎ 實施例 8 15 傾斜 5 20 ◎ 實施例 10 10 傾斜 3 10 ◎ 實施例 10 30 傾斜 7 20 ◎ 實施例 ND :未檢測 27 1301626 第6表 高AI濃度層 形成時之陽極 氧4匕電流密度 (mA/cm2 ) _濃度層 形成時之陽極 氧4匕電流密度 (mA/cm2 ) 陽極氧化時之 定電壓狀態 保持時間(分) 高 Al^>^ 層之Α1濃度 (原子婁槐) _濃度 層之Α1濃度 (原子機) 高Α1濃度 層之厚度 (nm) 躺濃度 層之厚度 (nm) 靜電 容量 備考 5 25 ___15 20 1 10 __190 ◎ 實施例 0.5 ^/τ >ί 40 3* /Λ- ^_ 1-卜 30 ND 10 __190 X 比較例 - --1~— -J__30 30 ND in 士 ΛΑ / 分 /1 ~' -----L.190 X 比較例 有的仏件&本發明之電極 較優異的容量特性’並可相本發明之效果。 產業上利用之可能性 〜⑽殘供—種漏電細性優異之 藉由使用本發明 <電_,可 λ)τ , 击 Τ7Γ 10 高容量電容器用之雷搞 使電容器達到小型ϋ二™本發k電㈣,可 尘化及呵谷1化,更可進〜 容器之行動式機器等小型化。 V使使用6亥電【圖式簡單說明】 無 【主要元件符說說明】 無Anodic current density (mA/cm2) Low voltage state retention time during anodization (minutes) A1 concentration distribution state in the titanium oxide film A1 concentration (atomic%) in the titanium oxide film A1 concentration of the titanium oxide surface layer (atoms Number %) A1 concentration (atomic%) of the cerium oxide layer near the interface of cerium oxide/anodized layer. Electrostatic capacity test 25 60 uniform 1 1 1 〇 Example 20 60 uniform 5 5 5 〇 Example 10 60 Uniform 10 10 10 ◎ Example 10 60 Uniform 12 12 12 ◎ Example 8 60 Uniform 15 15 15 ◎ Example 10 60 Uniform 10 10 10 ◎ Example 18 60 Uniform 6 6 6 〇 Example 6 60 Uniform 20 20 20 ◎ Example 5 60 Uniform 22 22 22 ◎ Example 20 60 Uniform 5 5 5 〇 Example 18 60 Uniform 7 7 7 〇 Example 12 60 均·9 9 9 〇 Example 10 60 Uniform 13 13 13 ◎ Example 10 60 Uniform 11 11 11 ◎ Example 9 60 Uniform 14 14 14 ◎ Example 1 60 Uniform 25 25 25 ◎ Example 0.5 60 Uniform 30 30 30 X Comparative Example 0.7 60 Uniform 28 28 28 X Comparative Example 40 60 Uniform ND ND ND X Comparative Example 50 60 Uniform ND ND ND X Comparative Example 20 10 Tilt 1 25 ◎ Example 25 5 Tilt 0.5 15 ◎ Example 5 40 Tilt 10 25 ◎ Example 8 15 Tilt 5 20 ◎ Example 10 10 Tilt 3 10 ◎ Example 10 30 Tilt 7 20 ◎ Example ND: Undetected 27 1301626 The anodic oxygen 4 匕 current density (mA/cm 2 ) at the time of formation of the high AI concentration layer of the sixth table _ the anode oxygen current density (mA/cm 2 ) at the time of formation of the concentration layer Constant voltage state retention time during anodization (minutes) High Al^>^ Layer Α1 concentration (atomic 娄槐) _ concentration layer Α1 concentration (atomic machine) Α1 concentration layer thickness (nm) lie concentration layer Thickness (nm) Electrostatic capacity test 5 25 ___15 20 1 10 __190 ◎ Example 0.5 ^/τ > ί 40 3* /Λ- ^_ 1-卜 30 ND 10 __190 X Comparative example - --1~— -J__30 30 ND in gentry / min / 1 ~ ' ----- L. 190 X Comparative Examples Some of the electrodes of the present invention have superior capacity characteristics' and can be combined with the effects of the present invention. Industrial Applicability ~ (10) Residual Supply - Excellent in leakage fineness by using the present invention <Electrical_, λ)τ, Τ7Γ 10 High-capacity capacitors for lightning to make capacitors reach a small size Sending k electricity (4), it can be dusted and smashed into a valley, and it can be made into a miniaturized mobile machine such as a container. V makes use of 6 hai [simplified description of the diagram] None [Main component description] None

2828

Claims (1)

1301626 十、申請專利範圍: 1· -種驗電容n之電極,係由料構成,域銘落具 有結晶大小為2.5nm以下或非結晶構造之氧化鈦膜者。 2· -種用於電容器之電極箱,係由料構成,且該銘箱具 5 有氧化鋁所形成之覆膜、及結晶大小為2.5nm以下或非 結晶構造之氧化鈦膜者。 3· -種驗電容H之電簡,係練_成,且該銘箱具 有結晶大小為2.5mn以下或非結晶構造之氧化鈦膜、及 鋁與鈦之複合氧化物或混合氧化物中之一者或兩者之 ⑺ 覆膜者。 4. 一種用於電容器之電極箔,係由鋁箔構成,且該鋁箔具 有氧化鋁所形成之覆膜、鋁與鈦之複合氧化物或混合氧 化物中之一者或兩者之覆膜、及結晶大小為2511111以下 或非結晶構造之氧化鈦膜者。 I5 5· 一種用於電谷器之電極猪,係於前述申請專利範圍第1 〜4項中任一項之由氧化鈦所形成之覆膜,含有〇1原子 數%以上、25原子數%以下的鋁者。 6· —種用於電容器之電極箔,係於前述申請專利範圍第j 〜4項中任一項之由氧化鈦所形成之覆膜中含有紹,且 2〇 前述鋁濃度為〇·1原子數%以上、25原子數%以下,且前 述濃度沿著深度方向由覆膜表面增加至覆膜内部者。 7· —種用於電容器之電極箔,係於前述申請專利範圍第i 〜4項中任一項之由氧化鈦所形成之覆膜中含有〇1原 子數%以上、25原子數%以下的鋁,且前述覆膜中包含 29 1301626 有鋁濃度相異之2層氧化鈦層者。 8. —種電容器,係使用申請專利範圍第1〜7項中任一項之 用於電容器之電極箔者。1301626 X. Patent application scope: 1· - The electrode of the capacitor n is composed of materials, and the domain name is a titanium oxide film having a crystal size of 2.5 nm or less or an amorphous structure. 2. An electrode case for a capacitor, which is composed of a material, and which has a film formed of alumina and a titanium oxide film having a crystal size of 2.5 nm or less or an amorphous structure. 3· - Detecting the capacitance of the capacitor H, which is made up of a titanium oxide film having a crystal size of 2.5 mn or less or an amorphous structure, and a composite oxide or mixed oxide of aluminum and titanium. One or both (7) laminator. 4. An electrode foil for a capacitor, which is composed of an aluminum foil, and the aluminum foil has a film formed of alumina, a composite oxide of aluminum and titanium, or a film of a mixed oxide, or both, and A titanium oxide film having a crystal size of 2511111 or less or an amorphous structure. I5 5· An electrode pig for use in an electric grid, which is a film formed of titanium oxide according to any one of the above-mentioned claims 1 to 4, which contains 〇1 atom% or more and 25 atom%%. The following aluminum. An electrode foil for a capacitor, which is contained in a film formed of titanium oxide according to any one of the above-mentioned claims, and wherein the aluminum concentration is 〇·1 atom It is several % or more and 25 atomic % or less, and the said density increases from the surface of a film to the inside of a film along a depth direction. An electrode foil for a capacitor, which is a film formed of titanium oxide according to any one of items 1-4 to 4 of the above-mentioned application, which contains 〇1 atom% or more and 25 atom%% or less. Aluminum, and the above-mentioned film contains 29 1301626 which has two layers of titanium oxide having different aluminum concentrations. 8. A capacitor for use in an electrode foil for a capacitor according to any one of claims 1 to 7. 3030
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