1297168 (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關使用於半導體元件的製造之離子注入裝 置，更詳而言之，是有關成批式（batch)的離子注入裝置。 【先前技術】 對半導體晶圓之局處的雜質摻雜劑（dopant)注入（離子 注入）是藉由對配置於真空處理室内的半導體晶圓的一部 份射出離子射束來進行。如此之局處的離子射束照射，一 般是在半導體晶圓上使照相阻絕層光罩圖案化，利用該光 罩來部分地遮蔽晶圓表面，藉此方法進行。 但，若離子射東被照射於照相阻絕層光罩，則會自照 相阻絕層產生水分或有機物等的外氣。此外氣會隨著離子 射束而注入晶圓内，或附著於晶圓表面而發生結晶缺陷。 而且，滯留於晶圓上，干擾離子射束，使得雜質摻雜劑的 注入精度降低。因此，外氣會形成半導體晶圓的製作良品 率降低的原因。 然，此種的離子注入裝置中，自照相阻絕層光罩發生 的外氣是不可避免的，無法予以消除此外氣的發生。於 是，爲了使半導體晶圓製造的製造良品率提升，如何迅速 地自晶圓表面除去外氣是件重要的事。 自晶圓表面除去外氣的技術，例如有下述專利文獻 在專利文獻1中記載離子注入裝置的晶圓搭載構件， -4- 1 ° (2) 1297168 其特徵係具有： 被旋轉驅動的支持部； 保持被配置於以該支持部爲中心的圓周上的晶圓之晶 圓保持部；及 連結該晶圓保持部與上述支持部，而將上述晶圓保持 部支持於上述支持部的周圍之中間部； 述中間部具有氣體吸引手段，其係藉由旋轉來從上 述晶圓保持部的上述晶圓所被保持的一側的面吸引氣體往 其背面側。 具有以此氣體吸引手段來將外氣吸引排除至晶圓所被 保持的面的背側之特徴。 〔專利文獻1〕日本特開平1 1 -204075(申請專利範圍） 就此技術而言，雖是以氣體吸引手段來使外氣吸引排 除至晶圓所被保持的面的背側，但僅靠氣體吸引是無法迅 速地除去自晶圓發生的外氣。因此，即使利用專利文獻1 所記載的技術，還是無法充分地防止新發生的外氣分子結 合於晶圓表面而引起的結晶缺陷等發生。 【發明內容】 本發明是用以解決上述課題者，其目的是在於提供一 種可迅速地排除自晶圓或真空處理室等的構件所發生的外 氣，不使氣體滯留於晶圓附近之離子注入裝置構造。 在此，首先說明有關本說明書中所使用的語句。 本說明書中所謂的『晶圓載置面』是意指設定於晶圓 -5- (3) 1297168 載置板的一方面之晶圓載置用的面區域。 又，所謂『壁面的仰角』是意指來自對象的壁面的基 準面之仰角，例如圖3 3所示，當對象的壁面爲氣體排除 用壁面時，爲該氣體排除用壁面與和晶圓載置面平行的面 所成的角度。更詳而言之，意指在和晶圓載置面平行的面 與對象的壁面所交叉的交叉線上的特定點，包含所有在該 壁面劃上接線時的接線的平面與和該晶圓載置面平行的面 I 所成的角度。 又，本說明書中所謂的『自晶圓發生的外氣』是意指 接受離子射束的照射後自晶圓飛出的氣體分子狀粒子，或 自施加於晶圓表面的照相阻絕層光罩所發生的水分或有機 物等的氣體狀粒子。 (1)爲了解決上述課題，本發明第1態樣的離子注入 裝置係具有： 旋轉於一定方向的旋轉體； > 收納上述旋轉體的真空處理室；及 對載置於上述旋轉體上的晶圓射出離子射束之離子射 束射出部； 在此，上述旋轉體係具備： 在一方面具有晶圓載置面的1或2個以上的晶圓載置 板； 用以使存在於上述晶圓載置面側的氣體排出至與上述 晶圓載置面呈相反面側之氣體排出路； 由上述晶圓載置板的一方面突出設置，具有氣體排除 -6- (4) 1297168 用的第1壁面之氣體排除構件；及 使上述晶圓載置板旋轉的驅動部； 又，上述氣體排除構件係配置於比上述氣體排出路更 靠旋轉方向後方，上述氣體排除構件的第1壁面係旋轉方 向前方側的面，以和上述晶圓載置面平行的面作爲基準 面，具有大於〇度小於9 0度的仰角，而從上述一方面上 升的平面或曲面。 如上述，往半導體晶圓注入雜質摻雜劑時，自照相阻 絕層光罩發生外氣。因此，晶圓表面附近會被氣體所覆 蓋。並且，自真空處理室的構成材料所產生的外氣或殘留 環境氣體等會浮游於真空處理室内，該等的氣體也會覆蓋 晶圓表面附近。在此，上述構成的離子注入裝置中，在比 氣體排出路更靠旋轉方向後方，且具有晶圓載置面的一方 面上，設置具有上述形狀的第1壁面之氣體排除構件。因 此，藉由晶圓載置板的旋轉，該第1壁面必然會衝突於晶 圓載置板的一方面側所存在的氣體。藉此衝突，該氣體會 推至氣體排出路的入口方向，從氣體排出路來排出至與晶 圓載置板的一方面側呈相反面側。 亦即，上述構成的離子注入裝置中，晶圓表面附近所 存在的殘留環境氣體等的氣體分子會在裝置的運轉開始同 時立即從晶圓表面附近排除，且在裝置運轉中新發生的外 氣（自晶圓發生的外氣或自真空處理室及旋轉體的構件發 生的外氣）會在發生後立即自晶圓表面附近排除。因此， 可抑止外氣等所引起的半導體品質劣化，其結果，半導體 (5) 1297168 製造的良品率會顯著提升。 在上述本發明第1態樣的離子注入裝置中，上述氣體 排除構件可更具有氣體排除用的第2壁面，其係上述第1 壁面以外的面，且旋轉方向前方側的面，以和上述晶圓載 置面平行的面作爲基準面，由具有大於90度小於180度 的仰角之平面或曲面所構成。 由於此構成是上述形狀的第2壁面設置於比第1壁面 更上方，因此藉由晶圓載置板的旋轉，該第2壁面會衝突 於晶圓載置板的一方面側所存在的氣體，使該氣體排除至 晶圓載置面的上方。亦即，比第1壁面的高度更高的位置 所存在的外氣等，可由第2壁面來排除成遠離晶圓表面的 上方，因此更可確實地防止晶圓表面附近的氣體滯留。 (2)本發明第2態樣的離子注入裝置係具有： 旋轉於一定方向的旋轉體； 收納上述旋轉體的真空處理室；及 對載置於上述旋轉體上的晶圓射出離子射束之離子射 束射出部； 在此，上述旋轉體係具備： 在一方面具有晶圓載置面的1或2個以上的晶圓載置 板； 由上述晶圓載置板的一方面突出設置，具有氣體排除 用壁面的氣體排除構件；及 使上述晶圓載置板旋轉的驅動部； 上述氣體排除用壁面爲旋轉方向前方側的面，以和上 -8- (6) 1297168 述晶圓載置面平行的面作爲基準面，具有大於90度小於 180度的仰角，而從上述一方面上升之平面或曲面。 若爲此構成的離子注入裝置，則具有上述形狀的氣體 排除用壁面的氣體排除構件會由晶圓載置板的一方面突出 設置，因此可藉由晶圓載置板的旋轉，使該氣體排除用壁 面與存在於晶圓載置板的一方面側的氣體衝突，而使該氣 體排除至晶圓載置面的上方。藉此，自晶圓發生的外氣或 浮游於真空處理室内的外氣或殘留環境氣體等的氣體會從 晶圓表面排除，且可防止氣體滯留晶圓表面。 在此，離子射束的照射對象的晶圓，通常會被施加照 相阻絕層光罩。本發明的離子注入裝置是對晶圓射出離子 射束的裝置，若對如此的晶圓使用本裝置，則外氣會藉由 離子射束的照射而自照相阻絕層光罩發生。此外氣的發生 是不可避免的，是造成半導體的品質劣化的原因。因此， 爲了使半導體品質提升，在此外氣發生後立即迅速地除去 是件重要的事。在此，若爲本發明構成，則可迅速地除去 自晶圓發生的外氣，因此半導體品質會提升。 在上述第1，第2態樣的本發明離子注入裝置中，上 述氣體排除構件來自晶圓載置面的高度可形成比〇.5mm 更高。 一般，使用離子注入裝置來注入摻雜劑的半導體晶圓 具有0.5mm程度的厚度。若爲上述構成，則由於氣體排 除構件來自晶圓載置面的高度比〇.5mm更高，因此被載 置於晶圓載置面的晶圓厚度會形成比氣體排除構件的高度 (¾ -9 - (7) 1297168 更低。藉此，往晶圓的表面方向飛來的氣體會藉由氣體排 除構件的氣體排除用壁面來阻礙，因此氣體不易集結於晶 圓表面附近。 (3)在上述第1，第2態樣的本發明離子注入裝置中， 上述旋轉體係以上述驅動部作爲旋轉中心來將2個以上的 晶圓載置板配列成放射狀之圓盤形狀，上述旋轉體上的上 述氣體排除構件係對上述旋轉中心，同心圓狀地配置2個 以上。 若爲此構成，則旋轉體的旋轉會變得順暢，且可使晶 圓的載置容量增加。並且，在此構成中，由於2個以上的 氣體排除構件會被配置成同心圓狀，因此配合於此來將晶 圓配置成同心圓狀，藉此可使旋轉驅動更順暢，且可效率 佳地對晶圓照射離子射束。而且，可取得：自晶圓表面發 生的外氣會藉由配置於與晶圓同一軌道上的氣體排除構件 來立即排除之作用效果。 上述第1態樣的本發明的離子注入裝置中，上述氣體 排出路可爲上述2個以上的晶圓載置板互相的間隙。 若爲此構成，則可活用晶圓載置板互相的間隙來作爲 氣體排出路，因此不必在晶圓載置板中開孔。又，若爲此 構成，則可藉由變化晶圓載置板互相的間隔來簡便地調節 氣體排出路的排出容量。 上述第1態樣的本發明離子注入裝置中，上述晶圓載 置板可由1個圓盤狀的板所構成，上述氣體排出路可由設 置於上述圓盤狀的板之貫通孔所構成，在上述圓盤形狀的 -10 - (8) 1297168 板的旋轉中心設置上述驅動部。 若爲此構成，則可提高旋轉體之晶圓的積載容量，且 真空處理室内的晶圓載置面側的空間與相反面側的空間會 藉1個圓盤來隔開，因此兩空間的遮蔽率高。因此，與晶 圓載置面側呈相反側的空間中所存在的氣體流入晶圓載置 面側的顧慮少，所以更可確實地防止氣體集結於晶圓表面 附近。又，若爲此構成，則與將2個以上的晶圓載置板結 合於驅動部而成的旋轉體相較之下，旋轉體的強度會提 升。 上述本發明離子注入裝置中，上述氣體排除構件可爲 在上述一方面側切起上述圓盤形狀的板的一部份而成之葉 片，上述貫通孔可爲形成於該切起部分的孔。 若爲此構成，則可藉由切起氣體排除構件，使氣體排 除構件與晶圓載置板一體設置。藉此，和結合其他構件的 氣體排除構件與晶圓載置板而成的旋轉體相較之下，氣體 排除構件的上升部分的強度會提高。又，因爲可同時形成 氣體排除構件與氣體排出路，所以旋轉體的生產性會提 高。 又，上述本發明離子注入裝置中，上述貫通孔及上述 葉片可對上述圓盤狀的板的旋轉中心，同心圓狀地配置2 個以上。 若爲此構成，則可配合氣體排除構件來將晶圓配置成 同心圓狀，因此可藉由旋轉驅動來效率佳地將離子射束照 射至晶圓，且可立即排除自晶圓發生的外氣。 -11 - (9) 1297168 又，此構成中一旦晶圓被配置成同心圓狀，則可更迅 速地排除外氣，且離子射束可正確照射，因此往無用的部 位（晶圓以外的構件）之離子射束的照射少，藉此自真空處 理室或旋轉體的構件發生的氣量會減。 如以上説明，若利用本發明，則不可避免地自晶圓發 生的外氣，或自真空處理室或旋轉體的構件發生的外氣， 或真空處理室内的殘留環境氣體等的氣體，可從晶圓表面 立即排除。藉此，可取得能夠確實地抑止外氣等所引起之 晶圓的結晶缺陷的發生或離子注入時的劑量偏移的發生等 之顯著的效果。 【實施方式】 本發明的離子注入裝置係具備具有氣體排除用壁面的 氣體排除構件，具備使該氣體排除用壁面衝突於半導體晶 圓表面附近所存在的氣體，而由該表面附近來確實且迅速 地排除氣體之構造。以下，說明有關如此之本發明的離子 注入裝置的最佳形態。 〔實施形態1〕 本發明的實施形態1的離子注入裝置，如圖3所示， 具有： 旋轉於一定方向的旋轉體1 0 0 ; 收納此旋轉體1 0 0的真空處理室3 0 2 ; 對載置於旋轉體上的晶圓射出離子射束3 0 5之離子射 -12- (10) 1297168 束射出部306 ; 第1泵303 ;及 第2泵304 。 另外，雖圖面中顯示晶圓1 0 5，但此晶圓1 0 5並非本 發明的離子注入裝置的必須構成要素。 邊參照圖面邊說明有關本實施形態1的主要構成要素 的旋轉體。 圖1是表示本發明的實施形態1的旋轉體的正面圖。 圖2是表示圖1的A - B線剖面的模式説明圖。 在此，本實施形態1的旋轉體係具備： 在一方面具有晶圓載置面106的1或2個以上的晶圓 載置板1 〇 1 ; 用以將存在於上述晶圓載置面側的氣體排出至與上述 晶圓載置面1 06呈相反面側的氣體排出路1 04 ; 從上述晶圓載置板101的一方面突出設置之具有氣體 排除用的第1壁面1 〇的氣體排除構件1 03 ;及 使上述晶圓載置板1 0 1旋轉的驅動部1 0 2。 上述氣體排除構件103被配置於比上述氣體排出路 104更靠旋轉方向後方，上述氣體排除構件1〇3的第1壁 面1 〇爲旋轉方向前方側的面，亦即以和上述晶圓載置面 1 0 6平行的面作爲基準面，具有大於0度小於9 0度的仰 角，從上述一方面上升的平面或曲面。 由於此構造在比氣體排出路1 0 4更靠旋轉方向後方， 且具有晶圓載置面106的一側面（一方面上）設置具有上述 -13- (11) 1297168 形狀的第1壁面1 0之氣體排除構件1 0 3 ’因此一旦晶圓 載置板101旋轉，則該第1壁面1 〇會衝突於晶圓載置板 1 0 1的一方面側所存在的氣體，將氣體引導至氣體排出路 104，所以該氣體會被排出至與晶圓載置板101的一方面 側呈相反面側。藉此，可防止晶圓表面的氣體滯留’使從 晶圓發生的外氣，或浮游於真空處理室内的外氣’殘留環 境氣體等的氣體能夠迅速地從晶圓表面排除。 上述氣體排除構件103，來自包含晶圓載置面106的 平面之高度可比載置於晶圓載置面106的晶圓之高度（厚 度）更高。而且，氣體排除構件103的高度越高，越能夠 阻止且排除更多的氣體飛來，因此只要不妨礙真空處理室 内之旋轉體順暢旋轉，最好比晶圓更充分地高。一般使用 離子注入裝置來進行摻雜劑注入的半導體晶圓的厚度爲 0.5mm程度，因此氣體排除構件103的高度最好比0.5mm 更高，更理想爲l.〇mm以上。但，氣體排除構件103的 理想高度是與晶圓的厚度關係爲相對性的事項，因此氣體 排除構件103的高度並非是未滿0.5mm，就不能取得良好 的結果。 更說明有關上述旋轉體的構造。本實施形態1的旋轉 體100，如圖1，2所示，以驅動部1 02爲旋轉中心，8個 晶圓載置板1 0 1會取一定間隔的間隙來配置成放射狀，在 晶圓載置板101的一方面（上面），晶圓載置面106會被設 成同心圓狀，在該面，氣體排除構件1 03會形成從該面突 出的狀態附設之構造。而且，在此旋轉體1 00，晶圓載置 14- (12) 1297168 板1 Ο 1的上述間隙會形成氣體排出路1 04。 又，上述氣體排除構件103，如圖1及圖2所示，配 置於比氣體排出路1 04更靠旋轉方向後方，且沿著晶圓載 置板1 〇 1的旋轉方向前方的端部而設置。而且，具備氣體 排除用的第1壁面10，此第1壁面1〇，如圖2所示，爲 旋轉方向前方側的面，以和上述晶圓載置面1 06平行的面 作爲基準面，具有45度的仰角，形成從上述一方面上升 的平面。 又，氣體排除構件103的高度係形成0.5mm。 另外，第1壁面10的仰角，例如圖3 3(A)所示，爲 第1壁面10與和晶圓載置面106平行的面所成之角度， 亦即以該平行的面作爲基準面之仰角。 其次，以圖3所示的離子注入裝置爲例，說明有關實 施形態1的離子注入裝置的作動方法及離子注入時來自晶 圓表面的氣體排除方法。 首先，準備一用以局部注入摻雜劑的照相阻絕層光罩 於其表面圖案化的晶圓1 〇 5，且予以載置於真空處理室 3 02内的旋轉體100的晶圓載置面106上。 其次，使上述真空處理室3 02内真空後，令驅動部 102驅動，使旋轉體100旋轉驅動於一定方向。在此狀態 下使自離子射束射出部3 06射出的離子射束3 05照射於晶 圓的旋轉軌道上。 此離子射束的照射是利用在和旋轉面垂直的方向上静 電性或機械性掃描離子射束3 05，離子射束的寬度爲晶圓 C8) -15- (13) 1297168 的直徑以上，藉此在不使旋轉體1 Ο 0掃描下於晶圓1 Ο 5的 全面注入離子之方式，但如圖5所示，亦可利用使旋轉體 面掃描之方式的裝置。又，注入離子的劑量可藉由控制離 子射束的電流密度或照射時間之手段來調節。 但，一般照相阻絕層爲光罩，一旦離子射束3 05照射 於晶圓1 〇5，則不可避免地會從照相阻絕層發生外氣 202，但在本實施形態1的離子注入裝置中，由於載置晶 圓的晶圓載置板1 〇 1會旋轉運動，因此自晶圓發生的外氣 202，如圖2所示，會相對的往旋轉方向後方移動。藉 此，該外氣202會衝突於晶圓載置面106的旋轉方向後方 所設置的氣體排除構件1 03的氣體排除用壁面（第1壁面 10)。 在此，第1壁面10對含晶圓載置面106的基準面具 有45度的仰角，在具有該第1壁面10的氣體排除構件 103的旋轉方向前方設有氣體排出路104。因此，該第1 壁面10是以45度的角度來和外氣分子衝突，使外氣分子 持有角度來推至下方側（晶圓載置面側）。因此，外氣分子 會被引導至設置於晶圓載置板的氣體排出路104的入口， 由此來排出至晶圓載置板1 0 1的相反面側（背面側）。 另外，在真空處理室内，除了由阻絕層發生的外氣 2 02以外，自處理室或構成旋轉體的構件釋出的外氣，或 殘留環境氣體等浮遊著那樣的氣體201亦全部如圖2所 示，隨著晶圓載置板1 0 1的旋轉來相對的移動至旋轉方向 後方，和上述外氣202同樣地排出至晶圓載置板1 0 1的背 (§) -16- (14) 1297168 面側。 另一方面，在處理室内浮遊的氣體中’未與第1壁面 1 〇衝突的氣體是往晶圓的表面飛來，但如圖2所示，其 行進會在比晶圓1 05更高的氣體排除構件1 〇3被阻礙。因 此，不會到達晶圓105。 如此一來，存在於晶圓載置面側的氣體會被排除至晶 圓載置面1 0 6的相反面側或上方，因此若利用本實施形態 1的離子注入裝置，則可防止氣體滯留於晶圓表面附近。 另外，在使用未具有氣體排除構件1 〇3的以往旋轉體時， 隨著晶圓載置板的旋轉，雖氣體會一時從晶圓表面移動至 旋轉方向後方，但由於該旋轉是連續性的，因此該晶圓與 該氣體會再相會，無法使晶圓與氣體分子的接觸充分減 少。又，即使經常吸引真空處理室内，也無法立即排除因 離子射束的照射而新產生的微量氣體分子。 如圖3所示，在此裝置中，往背面側排出的氣體會經 由開口於晶圓載置板1 0 1的背面側的處理室空間的第2泵 304來從真空處理室302内排出。 並且，往晶圓載置面106的上方遠離的氣體，主要是 經由開口於晶圓載置面側的處理室空間的第1泵3 03來從 真空處理室3 02内排出。 但，往上方遠離的氣體在反射於真空處理室内之後， 亦可經由第1壁面1 0及氣體排出路1 04來排出至晶圓載 置板1 01的背面側。因此，可不設置第1泵3 03。 其次，說明有關上述實施形態1的旋轉體的變形例。 -17- (15) 1297168 (1)晶圓載置板1 Ο 1的個數及其集合形狀 晶圓載置板1 〇 1的個數，如上述，可爲1或2個以 上。當晶圓載置板1 〇 1爲1個時，例如，可形成圖1 8 (Β 1) 所示那樣在柱狀驅動部1 02的幹部設置晶圓載置板丨〇〗的 螺旋槳狀構造，或圖19(B)所示那樣在具有一個分枝（手腕） 的驅動部1 〇2的分枝前端設置晶圓載置板1 〇 1的樹木狀構 造，或圖20或圖22所示那樣晶圓載置板ιοί爲1個圓盤 狀的板所構成，在上述圓盤形狀的板的旋轉中心配置驅動 部102之構造。 另外，爲了簡略化圖面，未圖示圖1 8的一部份及圖 1 9中氣體排除構件1 〇3或氣體排出路1 〇4，但如上述，在 氣體排除構件1 〇3的旋轉方向前方必須設置氣體排出路 1 04。因此，當氣體排除構件1 03未被設置於晶圓載置板 101的旋轉方向前方的端部時，例如圖18(B1)，圖20或 圖22所示，可藉由形成切開該氣體排除構件103的旋轉 方向前方的晶圓載置板1 〇 1的至少一部份之貫通孔來設置 氣體排出路104。 此外，當氣體排除構件1 03設置於晶圓載置板1 〇 1的 旋轉方向前方的端部時，不必特別切開晶圓載置板1 0 1的 一部份來設置孔，例如圖1 8 (Β 1)所示，可利用晶圓載置 板1 〇 1的旋轉方向前方的空間來作爲氣體排出路1 04。 當藉由驅動部1 02來旋轉的晶圓載置板1 0 1爲2個以 上時，例如，可形成圖18(A1)所示那樣在圓柱狀驅動部 (16) 1297168 102的幹部將3個晶圓載置板101設置成放射狀的螺旋槳 狀構造，或圖19(A)或（C)所示那樣在具有4或8的分枝構 造的驅動部102的分枝前端設置4個或8個晶圓載置板 101的樹木狀構造，或圖21所示那樣在柱狀驅動部102 的幹部將圓盤分割成2個的形狀的2個扇形晶圓載置板 1 0 1會取所定間隔的間隙來組合的圓盤狀構造。 又，氣體排出路1 04可利用2個以上的晶圓載置板 1 〇 1互相的間隙，若爲此構造，則具有可藉由使晶圓載置 板1 〇 1的大小或組合數變化來簡便地調節晶圓載置板互相 的間隙之優點。 又，旋轉體1 〇〇可由以驅動部爲旋轉中心來將2個以 上的晶圓載置板1 0 1配列成放射狀的圓盤形狀，或，晶圓 載置板1 0 1爲1個圓盤狀的板所構成，在上述圓盤狀的板 的旋轉中心設置驅動部之構造。 若採用將複數的晶圓載置板1 0 1配置成圓盤形狀的構 造，則可在不損旋轉驅動性之下使晶圓的積載面積増加。 另一方面，若晶圓載置板1 0 1爲1個圓盤狀的板所構成， 則可成爲比組合複數個晶圓載置板者強度更強的旋轉體， 且可提高以晶圓載置板隔開的上下空間的遮蔽率。 另外，爲了更爲提高以晶圓載置板所隔開的上下空間 的遮蔽率，最好是旋轉體爲圓盤狀，且充分使該旋轉體的 外周緣與真空處理室的内壁接近之構造，若考量旋轉體的 旋轉順暢及旋轉體易設置於真空處理室内，則旋轉體外周 緣與真空處理室内壁的間隙可爲0.5mm〜50mm程度。 -19- (17) 1297168 (2) 有關第1壁面的形狀 氣體排除構件1 0 3的第1壁面1 0爲旋轉方向前方側 的面，亦即以和具有晶圓載置面1 0 6的一方面平行的面作 爲基準面，具有大於0度小於9 0度的仰角，從上述一方 面上升的面即可，並非限於圖2或圖33(A)所示的平面狀 壁面。例如，可爲圖33(B)所示那樣的曲面。又，第1壁 面1 〇只要能夠誘導衝突後的氣體至氣體排出路1 04，即 使其表面有凹凸亦可。 之所以爲上述第1壁面1 0的仰角小於90度的面，其 理由如下。 亦即，若仰角爲90度，則外氣與該壁面會自正面衝 突，因此氣體分子的動向會形成平行於旋轉方向。並且， 依照氣體分子的進入角度，會被引導至晶圓表面。藉此， 無法降低氣體分子與晶圓的接觸確率。另一方面，若仰角 大於90度，則對氣體分子而言受到上方向的反力，因此 無法誘導至氣體排出路。又，若第1壁面10的仰角爲〇 度，則當然不能完全取得對氣體分子的誘導效果。因此’ 第1壁面1 0的仰角必須爲小於9 0度大於0度。 (3) 有關氣體排除構件的全體形狀及其配置 氣體排除構件1 03是被配置於比氣體排出路1 〇4更》 旋轉方向後方，氣體排除構件1 03的第1壁面1 〇爲旋轉 方向前方側的面，亦即以和具有晶圓載置面1 06的一方面 20- (18) 1297168 平行的面作爲基準面，具有大於〇度小於9 0度的仰角， 從上述一方面上升的平面或曲面之構造。而且，氣體排除 構件103的形狀，只要至少具有上述第1壁面1〇，便可 取得上述作用，因此並非限於圖2所示的方形構造。例 如，亦可爲圖30(A)所示那樣具有第1壁面1〇的板狀構 造。 又，氣體排除構件103，例如圖12(A)或圖15(A)所 示，亦可爲在旋轉方向前方具有接續於上述第1壁面10 之仰角90度的面之形狀。若爲此形狀，則此面與第1壁 面10是以90度以上的鈍角交叉，因此與銳角（90度未満） 交叉時相較之下，交叉部的劣化不易產生。但，由於與此 面衝突的氣體分子會受到往平行於旋轉方向的方向等的反 力，因此該面最好是止於適當的窄度。另外，有關圖 12(B)所示那樣具有大於90度的仰角的頂面之形狀會在實 施形態2中説明。 又，氣體排除構件1 03可爲與晶圓載置板1 〇 1 —體設 置的構造，且亦可爲使獨立的各個構件結合的構造。例如 當晶圓載置板1 〇 1爲圓盤形狀時，可在一方面側切起該圓 盤形狀板的一部份來設置葉片，以形成於該切起的部分之 貫通孔作爲氣體排除構件1 〇3。若爲此構造，則可藉由切 起氣體排除構件1 03來將氣體排除構件1 〇3與晶圓載置板 1 〇 1 —體設置，因此可使旋轉體輕量化，且生產性佳。 又，若爲如此一體設置的構造，則氣體排除構件1 03的上 升部分的強度會提高。 (S) 21 - (19) 1297168 另一方面’就使獨立的各個可拆卸構件結合的構造而 言，因此爲可裝卸氣體排除構件1 03與晶圓載置板1 〇 j， 所以容易維修旋轉體或更換劣化的氣體排除構件1 03。医| 此，可實現維修性佳的裝置。 (4)有關氣體排除構件的高度 氣體排除構件103是來自含晶圓載置面1〇6的平面之 高度越高，越能夠阻礙更多的氣體飛來。因此，氣體排除 構件1 03最好爲比載置對象的晶圓厚度更高的構造。但， 若氣體排除構件1 03的高度過高，則會妨礙真空處理室内 之旋轉體的順暢旋轉，因此必須爲適當的高度，通常是以 旋轉體的旋轉速度（角速度），所載置之晶圓的大小，從旋 轉中心到晶圓的距離，開口於真空處理室内之泵的吸引力 等作爲參數來設定最適値。一般，使用此種離子注入裝置 來進行摻雜劑注入的半導體晶圓的厚度爲〇.5mm程度’ 因此最好氣體排除構件103的高度比〇.5mm高，更理想 爲比1.0 m m高。 又，如上述，最好此氣體排除構件1 〇3的頂面接續於 第1壁面10。在本實施形態1中，如圖2所示，頂面是 形成與晶圓載置面1 〇 6平行，且該頂面爲接續於第1壁面 10的面，因此第1壁面10的高度是形成與氣體排除構件 103的高度同等。 ‘ (5)有關旋轉體與真空處理室内壁的間隙1297168 (1) Description of the Invention [Technical Field] The present invention relates to an ion implantation apparatus used for the manufacture of a semiconductor element, and more particularly to an ion implantation apparatus for a batch. [Prior Art] Impurity implantation (ion implantation) of a semiconductor wafer is performed by emitting an ion beam to a part of a semiconductor wafer disposed in a vacuum processing chamber. Irradiation of the ion beam at such a location typically involves patterning the photographic barrier reticle on the semiconductor wafer and partially masking the surface of the wafer using the reticle. However, if the ion emitter is irradiated onto the photographic barrier layer, the external gas such as moisture or organic matter is generated by the self-reflection barrier layer. In addition, gas is injected into the wafer with the ion beam or adheres to the surface of the wafer to cause crystal defects. Moreover, it stays on the wafer and interferes with the ion beam, so that the implantation precision of the impurity dopant is lowered. Therefore, external air may cause a decrease in the yield of the semiconductor wafer. However, in such an ion implantation apparatus, external air generated from the photo-shielding mask is unavoidable, and the occurrence of the additional gas cannot be eliminated. Therefore, in order to improve the manufacturing yield of semiconductor wafer fabrication, how to quickly remove external air from the wafer surface is an important matter. A technique for removing external air from the surface of a wafer, for example, Patent Document 1 discloses a wafer mounting member of an ion implantation apparatus, and -4- 1 ° (2) 1297168 is characterized in that it is supported by a rotary drive. a wafer holding portion that is disposed on a wafer on a circumference around the support portion; and a connection between the wafer holding portion and the support portion, and supporting the wafer holding portion around the support portion The intermediate portion has a gas suction means for sucking gas from the surface of the wafer holding portion held by the wafer to the back side thereof by rotation. This gas attraction means is used to remove the external air suction to the back side of the face on which the wafer is held. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei. Attraction is unable to quickly remove the outside air generated from the wafer. Therefore, even with the technique described in Patent Document 1, it is not possible to sufficiently prevent occurrence of crystal defects or the like due to the bonding of newly generated external air molecules to the wafer surface. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the invention is to provide an ion that can quickly remove external air generated from a member such as a wafer or a vacuum processing chamber without trapping gas in the vicinity of the wafer. Injection device construction. Here, the statement used in this specification will be described first. The "wafer mounting surface" as used in the present specification means a surface area for wafer mounting on the one side of the wafer -5-(3) 1297168 mounting board. In addition, the "elevation angle of the wall surface" means an elevation angle of the reference surface from the wall surface of the object. For example, as shown in FIG. 3, when the wall surface of the object is a wall for gas exclusion, the wall for gas removal and the wafer are placed. The angle formed by the parallel faces of the faces. More specifically, it means a specific point on a cross line intersecting the surface parallel to the wafer mounting surface and the wall surface of the object, including all the planes of the wiring when the wall surface is wired, and the wafer mounting surface. The angle formed by the parallel faces I. In addition, the term "outside air generated from the wafer" as used in the present specification means a gas molecular particle which is ejected from the wafer after receiving the irradiation of the ion beam, or a photo resistive layer mask applied from the surface of the wafer. Gas-like particles such as moisture or organic matter that have occurred. (1) In order to solve the above problems, an ion implantation apparatus according to a first aspect of the present invention includes: a rotating body that rotates in a predetermined direction; > a vacuum processing chamber that houses the rotating body; and a pair of rotating bodies that are placed on the rotating body An ion beam emitting portion that emits an ion beam from a wafer; wherein the rotating system includes: one or two or more wafer mounting plates having a wafer mounting surface; and the semiconductor wafer is placed on the wafer The gas on the surface side is discharged to a gas discharge path on the opposite side to the wafer mounting surface; and the gas is removed from the one side of the wafer mounting plate, and the gas of the first wall surface for gas exclusion -6-(4) 1297168 is removed. a removal unit; and a drive unit that rotates the wafer mounting plate; wherein the gas removal member is disposed behind the gas discharge path in a rotation direction, and the first wall surface of the gas removal member is a front side in a rotation direction The plane parallel to the wafer mounting surface is used as a reference surface, and has a plane or a curved surface that rises from the above aspect in an elevation angle greater than a twist of less than 90 degrees. As described above, when an impurity dopant is implanted into the semiconductor wafer, external gas is generated from the photoretardant mask. Therefore, the surface of the wafer is covered by gas. Further, external air or residual ambient gas generated from the constituent material of the vacuum processing chamber floats in the vacuum processing chamber, and the gas also covers the vicinity of the wafer surface. Here, in the ion implantation apparatus of the above configuration, the gas-removing member having the first wall surface having the above-described shape is provided on one surface of the wafer mounting surface behind the gas discharge path. Therefore, the first wall surface inevitably collides with the gas existing on one side of the crystal mounting plate by the rotation of the wafer mounting plate. By this conflict, the gas is pushed to the inlet direction of the gas discharge path, and is discharged from the gas discharge path to the side opposite to the one side of the wafer mounting plate. In other words, in the ion implantation apparatus having the above configuration, gas molecules such as residual ambient gas existing in the vicinity of the wafer surface are immediately removed from the vicinity of the wafer surface at the start of the operation of the device, and the external gas newly generated during the operation of the device is generated. (External gas generated from the wafer or external air generated from the vacuum processing chamber and the components of the rotating body) is removed from the vicinity of the wafer surface immediately after the occurrence. Therefore, the deterioration of the semiconductor quality caused by the external air or the like can be suppressed, and as a result, the yield of the semiconductor (5) 1297168 can be remarkably improved. In the ion implantation apparatus according to the first aspect of the present invention, the gas-removing member may further include a second wall surface for gas removal, which is a surface other than the first wall surface, and a surface on the front side in the rotation direction, and The plane parallel to the wafer mounting surface serves as a reference plane and is formed by a plane or a curved surface having an elevation angle of more than 90 degrees and less than 180 degrees. With this configuration, the second wall surface having the above shape is disposed above the first wall surface. Therefore, the second wall surface collides with the gas existing on one side of the wafer mounting plate by the rotation of the wafer mounting plate. This gas is removed above the wafer mounting surface. In other words, the external air or the like existing at a position higher than the height of the first wall surface can be excluded from the upper surface of the wafer by the second wall surface, so that gas retention in the vicinity of the wafer surface can be surely prevented. (2) The ion implantation apparatus according to a second aspect of the present invention includes: a rotating body that rotates in a predetermined direction; a vacuum processing chamber that houses the rotating body; and an ion beam that emits an ion beam on a wafer placed on the rotating body The ion beam emitting unit includes: one or two or more wafer mounting plates having a wafer mounting surface on one hand; and the semiconductor mounting plate is protruded from the one of the wafer mounting plates to provide gas exclusion a gas-removing member on the wall surface; and a driving portion for rotating the wafer mounting plate; the gas-removing wall surface is a surface on the front side in the rotation direction, and is a surface parallel to the wafer mounting surface of the above - 8 - (6) 1297168 The reference plane has an elevation angle greater than 90 degrees and less than 180 degrees, and a plane or curved surface that rises from the above aspect. In the ion implantation apparatus configured as described above, the gas-removing member having the gas-removing wall surface having the above-described shape is protruded from the one of the wafer mounting plate, so that the gas can be removed by the rotation of the wafer mounting plate. The wall collides with the gas present on one side of the wafer mounting plate to exclude the gas above the wafer mounting surface. Thereby, external air generated from the wafer or external air or residual ambient gas floating in the vacuum processing chamber is removed from the wafer surface, and gas is prevented from remaining on the wafer surface. Here, the wafer to be irradiated by the ion beam is usually applied with a photo-shielding barrier. The ion implantation apparatus of the present invention is an apparatus for emitting an ion beam to a wafer. When the apparatus is used for such a wafer, the outside air is generated from the photomask barrier by the irradiation of the ion beam. In addition, the occurrence of gas is unavoidable and causes deterioration of the quality of the semiconductor. Therefore, in order to improve the quality of the semiconductor, it is important to remove it immediately after the occurrence of the additional gas. Here, according to the configuration of the present invention, the external air generated from the wafer can be quickly removed, so that the quality of the semiconductor is improved. In the above-described first and second aspects of the ion implantation apparatus of the present invention, the height of the gas-removing member from the wafer mounting surface can be made higher than 〇5 mm. Generally, a semiconductor wafer in which a dopant is implanted using an ion implantation apparatus has a thickness of about 0.5 mm. According to the above configuration, since the height of the gas removing member from the wafer mounting surface is higher than 〇.5 mm, the thickness of the wafer placed on the wafer mounting surface is formed to be higher than the height of the gas removing member (3⁄4 -9 - (7) 1297168 is lower. Therefore, the gas flying in the direction of the surface of the wafer is hindered by the gas-removing wall surface of the gas-removing member, so that the gas is less likely to collect near the surface of the wafer. (3) In the above In a second aspect of the present invention, in the above-described rotating system, two or more wafer mounting plates are arranged in a radial disk shape with the driving portion as a center of rotation, and the gas on the rotating body In this configuration, two or more concentric shapes are arranged in the center of the rotation. In this configuration, the rotation of the rotating body is smooth, and the mounting capacity of the wafer can be increased. Since two or more gas-removing members are arranged in a concentric shape, the wafers are arranged in a concentric shape, thereby making the rotation drive smoother and efficiently irradiating the wafers. Further, it is possible to obtain an effect that the external air generated from the surface of the wafer is immediately removed by the gas removing member disposed on the same track as the wafer. The ion implantation apparatus of the present invention according to the first aspect described above In the above, the gas discharge path may be a gap between the two or more wafer mounting plates. If the gap between the wafer mounting plates is used as a gas discharge path, it is not necessary to be in the wafer mounting plate. Further, in this case, the discharge capacity of the gas discharge path can be easily adjusted by changing the interval between the wafer mounting plates. In the ion implantation apparatus of the first aspect of the present invention, the wafer is placed. The plate may be constituted by one disk-shaped plate, and the gas discharge path may be constituted by a through hole provided in the disk-shaped plate, and the above-mentioned disk-shaped 10-(8) 1297168 plate is provided with the above-mentioned rotation center. According to this configuration, the load capacity of the wafer of the rotating body can be increased, and the space on the wafer mounting surface side and the space on the opposite side in the vacuum processing chamber are separated by a disk. Therefore, the shielding rate of the two spaces is high. Therefore, there is little concern that gas existing in the space on the side opposite to the wafer mounting surface side flows into the wafer mounting surface side, so that gas accumulation can be surely prevented from being concentrated near the wafer surface. Further, according to this configuration, the strength of the rotating body is improved as compared with the rotating body in which two or more wafer mounting plates are coupled to the driving portion. In the ion implantation apparatus of the present invention, the gas is used. The removing member may be a blade formed by cutting a part of the disk-shaped plate on the side of the above-mentioned one side, and the through hole may be a hole formed in the cut-and-raised portion. If it is configured for this, it may be cut by The gas removing member is provided so that the gas removing member is integrally provided with the wafer mounting plate, whereby the rising portion of the gas removing member is compared with the rotating body in which the gas removing member of the other member is combined with the wafer mounting plate The intensity will increase. Further, since the gas exhausting member and the gas discharge path can be simultaneously formed, the productivity of the rotating body is improved. Further, in the ion implantation apparatus of the present invention, the through hole and the vane may be arranged concentrically with respect to two or more of the center of rotation of the disk-shaped plate. If configured for this purpose, the wafer can be arranged concentrically with the gas-removing member, so that the ion beam can be efficiently irradiated to the wafer by rotational driving, and can be immediately excluded from the wafer. gas. -11 - (9) 1297168 In this configuration, once the wafer is arranged in a concentric shape, the outside air can be removed more quickly, and the ion beam can be irradiated correctly, so that it is not used (a member other than the wafer) The irradiation of the ion beam is small, whereby the amount of gas generated from the vacuum processing chamber or the member of the rotating body is reduced. As described above, according to the present invention, the external air generated from the wafer inevitably, or the external air generated from the vacuum processing chamber or the member of the rotating body, or the residual ambient gas in the vacuum processing chamber can be used. The wafer surface is immediately removed. As a result, it is possible to obtain a remarkable effect of suppressing the occurrence of crystal defects of the wafer caused by external air or the like, or the occurrence of a dose shift during ion implantation. [Embodiment] The ion implantation apparatus of the present invention includes a gas-removing member having a gas-removing wall surface, and includes a gas that causes the gas-removing wall surface to collide with the vicinity of the surface of the semiconductor wafer, and is reliably and rapidly formed from the vicinity of the surface. The structure of the gas is excluded. Hereinafter, the best mode of the ion implantation apparatus of the present invention as described above will be described. [Embodiment 1] As shown in Fig. 3, the ion implantation apparatus according to Embodiment 1 of the present invention includes: a rotating body 1 0 0 rotated in a fixed direction; and a vacuum processing chamber 3 0 2 accommodating the rotating body 100; An ion beam -12-(10) 1297168 beam emitting portion 306; a first pump 303; and a second pump 304 are emitted from the ion beam 3 0 5 on the wafer placed on the rotating body. Further, although the wafer 105 is displayed on the drawing, the wafer 105 is not an essential component of the ion implantation apparatus of the present invention. The rotator of the main components of the first embodiment will be described with reference to the drawings. Fig. 1 is a front elevational view showing a rotary body according to a first embodiment of the present invention. Fig. 2 is a schematic explanatory view showing a cross section taken along line A - B of Fig. 1; Here, the rotation system of the first embodiment includes one or two or more wafer mounting plates 1 and 1 having a wafer mounting surface 106 on the one hand, and discharges the gas existing on the wafer mounting surface side. a gas discharge path 104 to the opposite side of the wafer mounting surface 106; a gas removal member 103 having a first wall surface 1 气体 for gas exclusion protruding from the one side of the wafer mounting plate 101; And a driving unit 1 0 2 that rotates the wafer mounting plate 101. The gas-removing member 103 is disposed behind the gas discharge path 104 in the direction of rotation, and the first wall surface 1 of the gas-removing member 1A is a surface on the front side in the rotational direction, that is, on the wafer mounting surface. The 1 0 6 parallel plane serves as a reference plane and has an elevation angle greater than 0 degrees and less than 90 degrees, and a plane or curved surface that rises from the above aspect. Since the structure is located behind the gas discharge path 104, and has a side surface (on the one hand) of the wafer mounting surface 106, the first wall surface 10 having the above-described-13-(11) 1297168 shape is provided. The gas removing member 1 0 3 ' Therefore, once the wafer mounting plate 101 rotates, the first wall surface 1 冲突 collides with the gas existing on the one side of the wafer mounting plate 1 0 1 to guide the gas to the gas discharge path 104. Therefore, the gas is discharged to the side opposite to the one side of the wafer mounting plate 101. Thereby, gas retention on the surface of the wafer can be prevented, and the gas generated from the wafer or the external air floating in the vacuum processing chamber can be quickly removed from the wafer surface. The gas removing member 103 has a height from a plane including the wafer mounting surface 106 which is higher than a height (thickness) of the wafer placed on the wafer mounting surface 106. Further, the higher the height of the gas-removing member 103, the more it is possible to prevent and exclude more gas from flying. Therefore, it is preferable to be sufficiently higher than the wafer as long as it does not hinder the smooth rotation of the rotating body in the vacuum processing chamber. The thickness of the semiconductor wafer to which dopant implantation is generally performed using an ion implantation apparatus is about 0.5 mm, and therefore the height of the gas-removing member 103 is preferably higher than 0.5 mm, more preferably 1. mm or more. However, the ideal height of the gas-removing member 103 is a relative relationship with the thickness of the wafer. Therefore, the height of the gas-removing member 103 is not less than 0.5 mm, and good results cannot be obtained. More specifically, the configuration of the above-described rotating body will be described. As shown in FIGS. 1 and 2, the rotating body 100 of the first embodiment has a driving unit 102 as a center of rotation, and eight wafer mounting plates 110 are arranged in a radial gap at a predetermined interval, and are placed on the wafer. On the one hand (upper side) of the plate 101, the wafer mounting surface 106 is concentrically formed, and on this surface, the gas removing member 103 forms a structure in which the gas is protruded from the surface. Further, in the rotating body 100, the gap in which the wafer mounts 14-(12) 1297168 1 Ο 1 forms a gas discharge path 104. Further, as shown in FIGS. 1 and 2, the gas-removing member 103 is disposed behind the gas discharge path 104 in the direction of rotation and is provided along the front end in the rotational direction of the wafer mounting plate 1 〇1. . Further, the first wall surface 10 for gas exclusion is provided, and as shown in FIG. 2, the first wall surface 1 is a surface on the front side in the rotational direction, and a surface parallel to the wafer mounting surface 106 is used as a reference surface. An elevation angle of 45 degrees forms a plane that rises from the above aspect. Further, the height of the gas removing member 103 is 0.5 mm. Further, the elevation angle of the first wall surface 10 is, for example, an angle formed by the first wall surface 10 and a surface parallel to the wafer mounting surface 106 as shown in FIG. 3(A), that is, the parallel surface is used as a reference surface. Elevation angle. Next, an ion implantation apparatus shown in Fig. 3 will be taken as an example to explain an operation method of the ion implantation apparatus according to the first embodiment and a gas removal method from the surface of the wafer during ion implantation. First, a wafer 1 〇 5 patterned on the surface of the photographic barrier layer for partially implanting a dopant is prepared, and the wafer mounting surface 106 of the rotating body 100 placed in the vacuum processing chamber 302 is prepared. on. Next, after the vacuum processing chamber 312 is evacuated, the driving unit 102 is driven to rotate the rotating body 100 in a predetermined direction. In this state, the ion beam 305 emitted from the ion beam emitting portion 306 is irradiated onto the rotation orbit of the crystal. The irradiation of the ion beam is performed by electrostatically or mechanically scanning the ion beam 305 in a direction perpendicular to the plane of rotation, the width of the ion beam being more than the diameter of the wafer C8) -15- (13) 1297168, Thereby, ions are implanted into the wafer 1 Ο 5 without scanning the rotating body 1 Ο 0. However, as shown in Fig. 5, a device for scanning the surface of the rotating body may be used. Again, the dose of implanted ions can be adjusted by means of controlling the current density or illumination time of the ion beam. However, in general, the image blocking layer is a photomask. When the ion beam 305 is irradiated onto the wafer 1 〇 5, the external gas 202 is inevitably generated from the photographic barrier layer. However, in the ion implantation apparatus of the first embodiment, Since the wafer mounting plate 1 〇1 on which the wafer is placed is rotated, the external air 202 generated from the wafer moves rearward in the direction of rotation as shown in FIG. 2 . As a result, the outside air 202 collides with the gas-removing wall surface (first wall surface 10) of the gas-removing member 103 provided behind the rotation direction of the wafer mounting surface 106. Here, the first wall surface 10 has an elevation angle of 45 degrees with respect to the reference mask including the wafer mounting surface 106, and a gas discharge path 104 is provided in front of the rotation direction of the gas removing member 103 having the first wall surface 10. Therefore, the first wall surface 10 collides with the foreign air molecules at an angle of 45 degrees, and the outer air molecules are held at an angle to the lower side (the wafer mounting surface side). Therefore, the external air molecules are guided to the inlet of the gas discharge path 104 provided in the wafer mounting plate, and are discharged to the opposite surface side (back side) of the wafer mounting plate 110. Further, in the vacuum processing chamber, in addition to the external air 222 generated by the barrier layer, the external gas released from the processing chamber or the member constituting the rotating body, or the gas 201 floating in the residual ambient gas or the like is also as shown in FIG. As shown in the figure, the wafer mounting plate 1 0 1 is relatively moved to the rear in the rotation direction, and is discharged to the back of the wafer mounting plate 1 0 1 (§) -16- (14) in the same manner as the above-described outside air 202. 1297168 Face side. On the other hand, in the gas floating in the processing chamber, the gas that does not collide with the first wall surface 是 is flying toward the surface of the wafer, but as shown in FIG. 2, the traveling will be higher than the wafer 156. The gas removing member 1 〇 3 is blocked. Therefore, the wafer 105 is not reached. In this way, the gas existing on the wafer mounting surface side is removed to the opposite side or the upper side of the wafer mounting surface 106. Therefore, by using the ion implantation apparatus of the first embodiment, the gas can be prevented from staying in the crystal. Near the round surface. Further, when a conventional rotating body having no gas-removing member 1 〇3 is used, the gas moves from the wafer surface to the rear in the rotation direction with the rotation of the wafer mounting plate, but since the rotation is continuous, Therefore, the wafer and the gas will meet again, and the contact between the wafer and the gas molecules cannot be sufficiently reduced. Further, even if the vacuum processing chamber is frequently attracted, it is impossible to immediately eliminate trace gas molecules newly generated by the irradiation of the ion beam. As shown in Fig. 3, in this apparatus, the gas discharged to the back side is discharged from the vacuum processing chamber 302 through the second pump 304 which is opened in the processing chamber space on the back side of the wafer mounting plate 110. Further, the gas that is separated from the upper side of the wafer mounting surface 106 is mainly discharged from the vacuum processing chamber 312 through the first pump 303 opened in the processing chamber space on the wafer mounting surface side. However, after the gas that has been moved upward is reflected in the vacuum processing chamber, it may be discharged to the back side of the wafer mounting plate 101 via the first wall surface 10 and the gas discharge path 104. Therefore, the first pump 303 can be omitted. Next, a modification of the rotating body according to the first embodiment will be described. -17- (15) 1297168 (1) The number of wafer mounting plates 1 Ο 1 and its collective shape The number of wafer mounting plates 1 〇 1 may be one or more as described above. When the number of wafer mounting plates 1 〇 1 is one, for example, a propeller-like structure in which a wafer mounting plate is provided in the trunk portion of the columnar driving portion 102 as shown in FIG. 18 (Β 1), or As shown in Fig. 19(B), the tree-shaped structure of the wafer mounting plate 1 〇1 is provided at the branching end of the driving unit 1 〇2 having one branch (wrist), or the wafer loading as shown in Fig. 20 or Fig. 22 The plate ιοί is composed of one disk-shaped plate, and the structure of the drive unit 102 is disposed at the center of rotation of the disk-shaped plate. Further, in order to simplify the drawing, a part of Fig. 18 and the gas removing member 1 〇 3 or the gas discharge path 1 〇 4 in Fig. 19 are not shown, but as described above, the rotation of the gas removing member 1 〇 3 is performed. A gas discharge path 104 must be provided in front of the direction. Therefore, when the gas removing member 103 is not disposed at the end in front of the rotational direction of the wafer mounting plate 101, for example, as shown in FIG. 18 (B1), FIG. 20 or FIG. 22, the gas removing member can be formed by cutting. The gas discharge path 104 is provided in at least a portion of the through hole of the wafer mounting plate 1 〇1 in the rotational direction of the 103. Further, when the gas removing member 103 is disposed at the end in the rotational direction of the wafer mounting plate 1 〇1, it is not necessary to particularly cut a portion of the wafer mounting plate 1 0 1 to provide a hole, for example, FIG. 1), a space in front of the rotation direction of the wafer mounting plate 1 〇1 can be used as the gas discharge path 104. When the number of wafer mounting plates 1 0 1 rotated by the driving unit 102 is two or more, for example, three of the trunk portions of the cylindrical driving unit (16) 1297168 102 as shown in FIG. 18 (A1) can be formed. The wafer mounting plate 101 is provided in a radial propeller-like structure, or four or eight branches are provided at the branch front end of the driving unit 102 having a branching structure of 4 or 8 as shown in FIG. 19(A) or (C). The tree-like structure of the wafer mounting plate 101 or the two fan-shaped wafer mounting plates 1 0 1 in which the disk is divided into two in the trunk portion of the columnar driving portion 102 as shown in FIG. 21 takes a predetermined gap. A combined disc-like structure. Further, the gas discharge path 104 can use a gap between two or more wafer mounting plates 1 and 1 , and this structure can be easily changed by changing the size or the number of combinations of the wafer mounting plates 1 〇1. The advantage of adjusting the gap between the wafer mounting plates. Further, the rotating body 1 can be arranged in a radial shape by arranging two or more wafer mounting plates 1 0 1 with the driving portion as a center of rotation, or the wafer mounting plate 10 1 is a disk. The plate is formed in a shape, and the structure of the drive portion is provided at the center of rotation of the disk-shaped plate. When a configuration in which a plurality of wafer mounting plates 110 are arranged in a disk shape is employed, the landing area of the wafer can be increased without impairing the rotational driving property. On the other hand, when the wafer mounting plate 101 is composed of one disk-shaped plate, it can be a stronger rotating body than a plurality of wafer mounting plates, and the wafer mounting plate can be improved. The shielding rate of the separated upper and lower spaces. Further, in order to further increase the shielding rate of the upper and lower spaces separated by the wafer mounting plate, it is preferable that the rotating body has a disk shape and the outer peripheral edge of the rotating body is sufficiently close to the inner wall of the vacuum processing chamber. When the rotation of the rotating body is considered to be smooth and the rotating body is easily disposed in the vacuum processing chamber, the gap between the outer periphery of the rotating body and the wall of the vacuum processing chamber may be about 0.5 mm to 50 mm. -19- (17) 1297168 (2) The first wall surface 10 of the shape gas removing member 1 0 3 of the first wall surface is a surface on the front side in the rotational direction, that is, a surface having a wafer mounting surface 1 0 6 The plane parallel to the surface has an elevation angle of more than 0 degrees and less than 90 degrees, and the surface that rises from the above aspect is not limited to the planar wall surface shown in FIG. 2 or FIG. 33(A). For example, it may be a curved surface as shown in FIG. 33(B). Further, the first wall surface 1 〇 can induce the gas after the collision to the gas discharge path 104, that is, the surface thereof may have irregularities. The reason why the elevation angle of the first wall surface 10 is less than 90 degrees is as follows. That is, if the elevation angle is 90 degrees, the outside air and the wall surface will collide from the front side, so that the movement of the gas molecules will be parallel to the rotation direction. And, according to the angle of entry of the gas molecules, it will be directed to the surface of the wafer. Thereby, the contact accuracy between the gas molecules and the wafer cannot be reduced. On the other hand, if the elevation angle is larger than 90 degrees, the gas molecules are subjected to the reaction force in the upward direction, and therefore cannot be induced to the gas discharge path. Further, when the elevation angle of the first wall surface 10 is 〇, it is of course impossible to completely obtain the effect of inducing gas molecules. Therefore, the elevation angle of the first wall 10 must be less than 90 degrees and greater than 0 degrees. (3) The entire shape of the gas-removing member and the gas-discharging member 101 are disposed behind the gas discharge path 1 〇4 in the direction of rotation, and the first wall surface 1 of the gas-removing member 103 is in the direction of rotation. The side surface, that is, the surface parallel to the one side 20-(18) 1297168 having the wafer mounting surface 106 as a reference surface, has an elevation angle greater than a twist of less than 90 degrees, a plane rising from the above aspect or The construction of the surface. Further, since the shape of the gas-removing member 103 can achieve the above-described action as long as it has at least the first wall surface 1〇, it is not limited to the square structure shown in Fig. 2 . For example, a plate-like structure having the first wall surface 1〇 as shown in Fig. 30(A) may be used. Further, the gas-removing member 103 may have a shape having a surface that is continuous with the elevation angle of the first wall surface 10 by 90 degrees in front of the rotation direction, as shown in Fig. 12 (A) or Fig. 15 (A). If the shape is such a shape, the surface and the first wall surface 10 intersect at an obtuse angle of 90 degrees or more. Therefore, the deterioration of the intersection portion is less likely to occur than when the acute angle (90 degrees is not exceeded). However, since the gas molecules colliding with this surface are subjected to a reaction force in a direction parallel to the direction of rotation, the surface preferably ends at an appropriate narrowness. Further, the shape of the top surface having an elevation angle of more than 90 degrees as shown in Fig. 12(B) will be described in the second embodiment. Further, the gas-removing member 103 may have a structure that is provided integrally with the wafer-mounting plate 1 and may be a structure in which individual members are joined together. For example, when the wafer mounting plate 1 〇1 is in the shape of a disk, a portion of the disk-shaped plate may be cut on one side to provide a blade to form a through-hole formed in the cut-out portion as a gas-removing member. 1 〇 3. With this configuration, the gas removing member 1 〇 3 can be disposed integrally with the wafer mounting plate 1 切 1 by cutting the gas removing member 103, so that the rotating body can be made lighter and the productivity is good. Further, in the structure thus integrally provided, the strength of the rising portion of the gas removing member 103 is improved. (S) 21 - (19) 1297168 On the other hand, in terms of the structure in which the individual detachable members are combined, it is therefore the detachable gas removing member 103 and the wafer mounting plate 1 ,j, so it is easy to repair the rotating body. Or replace the deteriorated gas removing member 103. Medical | This allows for a well-maintained device. (4) Height of the gas-removing member The higher the height of the gas-removing member 103 from the plane including the wafer-mounting surface 1〇6, the more the gas can be prevented from flying. Therefore, it is preferable that the gas removing member 103 has a structure higher than the thickness of the wafer on which the object is placed. However, if the height of the gas-removing member 203 is too high, the smooth rotation of the rotating body in the vacuum processing chamber is hindered, and therefore it is necessary to have an appropriate height, usually at the rotational speed (angular velocity) of the rotating body. The size of the circle, the distance from the center of rotation to the wafer, the attractive force of the pump that opens in the vacuum processing chamber, etc., are optimally set as parameters. In general, the thickness of the semiconductor wafer for performing dopant implantation using such an ion implantation apparatus is about 55 mm. Therefore, it is preferable that the height of the gas-removing member 103 is higher than 〇5 mm, and more desirably higher than 1.0 m. Further, as described above, it is preferable that the top surface of the gas-removing member 1 〇3 is continuous with the first wall surface 10. In the first embodiment, as shown in FIG. 2, the top surface is formed in parallel with the wafer mounting surface 1A6, and the top surface is a surface continuing to the first wall surface 10. Therefore, the height of the first wall surface 10 is formed. It is equivalent to the height of the gas removing member 103. ‘ (5) The gap between the rotating body and the vacuum treated chamber wall
Cs) -22- (20) 1297168 爲了提高真空處理室内的収納空間的利用效率，最好 設置於旋轉體的氣體排除構件103的外緣與真空處理室的 内壁接近，但在考量旋轉體的順暢旋轉，或將旋轉體配置 於真空處理室内時所必要的充裕空間時，氣體排除構件 103的外緣與真空處理室的内壁之間隙最好爲〇.5mm〜 5 0 m m程度。 另外’如圖9(A)所示，當射出離子射束9〇2之射束 線處理室9 0 1的端部突出於真空處理室3 〇 2内時，基於同 樣的理由’氣體_除構件1 〇 3的外緣與射束線處理室9 〇 1 的贿部之間隙爲0 · 5 m m〜5 0 m m程度。 (6)有關封旋轉中心之氣體排除構件的配置 在半導體晶圓中局部注入雜質摻雜劑時，照相阻絕層 光罩會被施加於晶圓表面，自上方照射離子射束。因此， 當離子射束被照射時時，不可避免地外氣會自該照相阻絕 層光罩發生。亦即，覆蓋晶圓表面附近的主要氣體是從晶 圓發生的外氣，因此在能夠從晶圓表面來迅速排除該外氣 的位置配置氣體排除構件1 03是件重要的事。爲了有效率 地排除此外氣202，例如圖20所示，最好將此氣體排除 構件1 〇3設置於晶圓載置面1 06的旋轉方向後方。若在此 位置設置氣體排除構件103，則發生後的外氣202會與氣 體排除構件1〇3的第1壁面1〇衝突，因此外氣202發生 的同時可自晶圓表面迅速地排除外氣。 爲了更確實地防止晶圓表面之氣體的滯留’例如圖 -23- (21) 1297168 18(A1)，圖18(B1)，圖21或圖22所示，最好在晶圓載置 面106的旋轉方向前方也設置另一氣體排除構件103 °亦 即，在晶圓1 〇 5的旋轉方向前方及後方配置有氣體排除構 件103。其理由，如上述，因爲在真空處理室内’除了由 阻絕層所發生的外氣202以外’存在上述浮遊的氣體 20 1，因此藉由在晶圓的旋轉方向前方配置氣體排除構件 103，可防止浮遊的氣體201往晶圓的表面飛來。 又，由於本實施形態1是氣體排出路1 04與氣體排除 構件i 〇 3爲成對設置的構造，因此必須在各個氣體排除構 件1 03的旋轉方向前方設置氣體排出路1 04，但例如圖 18(A1)，圖18(B1)，圖20或圖22所示，亦可切除該氣體 排除構件1 0 3的旋轉方向前方的晶圓載置板1 〇 1的一部份 來形成貫通孔，以此作爲氣體排出路。又，例如圖18(A1) 或圖18(B1)所示，亦可活用晶圓載置板1〇1的旋轉方向 前方的間隙來作爲氣體排出路1 〇4。 最好此氣體排除構件1 〇3是對旋轉體的旋轉中心配置 成同心圓狀的2個以上之構造’若爲此構造，則因爲將2 個以上的氣體排除構件1 〇3配置成同心圓狀，因此可將晶 圓配置成同心圓狀。若如此將晶圓配置成同心圓狀，則與 非此情況時相較之下，因爲旋轉運動順暢，且可縮小離子 射束的照射寬，所以可取得能夠抑止自真空處理室或旋轉 體的構件所產生的外氣絶對量等之效果。 又，將2個以上的氣體排除構件1 03配置成同心圓狀 時，由於旋轉體的質量分布對旋轉中心容易取得平衡，因 -24- (22) 1297168 此例如圖1所示，最好將氣體排除構件1 03均等地配置。 若如此地配置，則晶圓載置板1 〇 1的旋轉運動會順暢，且 對所被載置的各個晶圓之離子射束的照射量（離子注入量） 容易均一。因此，半導體晶圓的製作良率會提升。但，當 然亦可爲例如圖2 1或圖22所示那樣，在對旋轉中心而言 爲非軸對稱的位置配置排除構件之構造。 (7)對氣體排出路之氣體排除構件的配置 此氣體排除構件1 03可爲配置於比氣體排出路1 04更 靠旋轉方向後方的構成，只要能夠從氣體排出路來排出與 第1壁面1 〇衝突的氣體，並非限於圖2所示那樣，氣體 排除構件103的第1壁面10與氣體排出路的通路壁面爲 連續的配置構成。例如圖1 1所示那樣，亦可爲氣體排除 構件1 03的底面與氣體排出路的通路壁面偏離的配置構 成。 只要氣體排出路1 04能夠將與第1壁面1 0衝突的氣 體排出至晶圓載置板1 〇 1的背面側，通路壁面的形狀並無 特別加以限定。例如，亦可爲圖10(A)〜（D)所示的形狀， 或曲面。但，氣體排出路1 04的旋轉方向前方側壁面，以 和晶圓載置面106水平的面作爲基準面，最好具有90度 以上180度未満的仰角。這是因爲若該仰角未滿90度， 則進入氣體排出路1 04的氣體會受到推至晶圓載置面側而 返回的反力。 又，氣體排出路1 04的旋轉方向後方側壁面，例如圖 •25- (23) 1297168 10(D)所示，以和晶圓載置面106水平的面作爲基準面， 最好爲具有大於90度未滿180度的仰角之構造。若爲此 構造，則氣體的排出不易被妨礙。但，並非限於此構造， 只要與氣體排除用的第1壁面1 0衝突後的氣體能夠順暢 地被排出至晶圓載置板1 0 1的背面側，亦可爲具有大於〇 度小於180度的仰角（對上述基準面而言）之構造。 〔實施形態2〕 本實施形態2是氣體排除構件具有氣體排除用的第1 壁面1 〇及第2壁面的點與上述實施形態1相異。更詳而 言之，實施形態2的氣體排除構件是實施形態1的氣體排 除構件1 03更於第1壁面1 〇以外的面，且旋轉方向前方 側的面具有氣體排除用的第2壁面20，其係由具有大於 90度小於180度的仰角（以和上述晶圓載置面106平行的 面作爲基準面）之平面或曲面所構成。 更說明有關配置具有如此第2壁面20的氣體排除構 件1 03之旋轉體。另外，有關與上述實施形態1同樣的事 項方面則於以下省略説明。 實施形態2的氣體排除構件103的第2壁面20是由 大於90度小於1 80度的仰角（以和設有氣體排除構件的晶 圓載置板表面（一方面）平行的面作爲基準面）之平面或曲 面所構成。具體而言，例如爲圖12(B)，圖14(B)，圖 30(B)或圖31(C)所示那樣的平面，或例如圖13(A)，圖 14(C) ’圖30(C)或圖3 1(B)所示那樣的曲面。 (24) 1297168 在此第2壁面20的仰角是意指第2壁面20與和晶圓 載置面106平行的面所成的角度，以該平行的面作爲基準 面的仰角。另外，與上述實施形態1時同樣，此氣體排除 構件103並非限於方形構造，亦可爲圖30(c)所示那樣的 板狀構造。 由於具有第2壁面20的氣體排除構件是第2壁面20 比第1壁面1 〇更設於上方，因此藉由晶圓載置板1 01的 旋轉來衝突於比第1壁面1 0的高度更高位置所存在的氣 體，而將該氣體排除於晶圓載置面1 06的上方。藉此，在 比第1壁面1 0的高度更高的位置所存在的外氣等的氣體 分子會遠離晶圓表面的上方，因此更可確實地防止晶圓表 面附近的氣體滯留。 此氣體排除構件103，例如圖13(A)所示，最好爲第 2壁面20與氣體排除構件1 03的頂面，亦即和晶圓載置 板1 0 1的表面平行的面接續的形狀。若爲此形狀，則會因 爲第2壁面20與頂面形成90度以上的鈍角交叉，所以與 交叉成銳角（未滿90度）時相較之下，交叉部的劣化不易 產生。但，當然亦可爲例如圖12(B)或圖14(C)所示那 樣，第2壁面20爲氣體排除構件103的頂面之形狀，與 氣體排除構件1 03的旋轉方向後方的壁面交叉成銳角之形 狀。 又，氣體排除構件1 0 3，例如圖1 2 (C)，圖1 3 (B)，圖 15(B)，圖16(A)或（B)所示，亦可形成具有交叉於第2壁 面20與第1壁面10之仰角90度的第3壁面之形狀。若 -27- (25) 1297168 爲此形狀，則第2壁面20與第3壁面，及第1壁面1 〇與 第3壁面會形成90度以上的鈍角交叉，因此與銳角時相 較之下，氣體的衝突所造成的劣化會變少。 〔實施形態3〕 實施形態3是本發明的第2態樣的離子注入裝置，具 備旋轉於一定方向的旋轉體，及收納上述旋轉體的真空處 理室，以及對載置於上述旋轉體上的晶圓照射離子射束的 離子射束射出部。此旋轉體是與上述實施形態1或2的旋 轉體及氣體的排除機構相異，但其他的事項則相同。於 是，在以下的説明是以和實施形態1相異的點爲中心來進 行説明。 此旋轉體是具備：在一方面具有晶圓載置面106的1 或2個以上的晶圓載置板1 0 1，及使自上述晶圓載置板 101的一方面突出設置之具有氣體排除用壁面30的氣體 排除構件1 03，及使上述晶圓載置板1 〇 1旋轉的驅動部； 上述氣體排除用壁面30爲旋轉方向前方側的面，對含上 述晶圓載置面106的平面而言，具有大於90度小於180 度的仰角，從上述一方面上升之平面或曲面的構造。本實 施形態3的旋轉體與實施形態1的旋轉體相較之下，氣體 排除用壁面3 0的仰角相異，氣體排出路不爲必須構成要 素。 實施形態3之旋轉體的具體例，例如有圖7及圖8所 示者。在此，圖7是旋轉體1〇〇的正面圖，圖8是表示圖 -28- (26) 1297168 7的C-D線剖面的形狀模式圖。 如圖7所示，此旋轉體100具備： 由1個圓盤狀的板所構成的晶圓載置板1 0 1 ; 設置於上述圓盤狀的晶圓載置板1 0 1的旋轉中心之驅 動部102 ;及 使從晶圓載置板101之具有晶圓載置面106的一方面 突出，且對上述旋轉中心設成同心圓狀之具有氣體排除用 壁面30的氣體排除構件103。 而且，該氣體排除構件103是夾著一個晶圓載置面 1〇6(晶圓105)來配置於其旋轉方向後方與旋轉方向前方。 又，此氣體排除構件1 〇 3的氣體排除用壁面3 0，如 圖8所示，爲旋轉方向前方側的面，以和上述晶圓載置面 1 06平行的面作爲基準面，具有1 3 5度的仰角，而形成從 上述一方面上升的平面。 另外，所謂氣體排除用壁面3 0的仰角，例如圖3 3 (C ) 所示，爲氣體排除用壁面3 0與和晶圓載置面1 0 6平行的 面或和旋轉方向平行的面所成的角度，以該平行的面爲基 準面的仰角。而且，該氣體排除用壁面30，如圖8所示 爲平面狀，具有一定的仰角，此例爲135度。 又，此氣體排除構件1 03來自晶圓載置板表面的高度 形成比〇.5mm更高。 更說明有關具備如此的旋轉體之離子注入裝置。 藉由晶圓載置板1 0 1的旋轉，由阻絕層所發生的外氣 202，如圖8所示，會相對的移動至旋轉方向後方，與氣 -29- (27) 1297168 體排除構件103的氣體排除用壁面30衝突。在此，由於 該氣體排除構件103的氣體排除用壁面30具有135度的 仰角，因此與該氣體排除用壁面30衝突的外氣202會在 旋轉方向後方對含晶圓載置面1 〇6的平面而言具方向性地 移動至上方。其結果，與氣體排除用壁面3 0衝突的外氣 202會自晶圓表面排除。 又，浮游於真空處理室内的氣體20 1也會隨著晶圓載 置板1 0 1的旋轉而相對性的移動至旋轉方向後方，但如此 的浮遊氣體201相對的接近至含晶圓載置面106的平面之 氣體的一部份與上述外氣202同樣，會與設置於晶圓載置 面1 06的旋轉方向前方的氣體排除構件1 03的氣體排除用 壁面30衝突而妨礙其進路，排除至晶圓載置面106的上 方。因此，可防止氣體往晶圓表面附近滯留。 在此，往晶圓載置面106的上方遠離的氣體，主要是 經由真空處理室内開口於晶圓載置面側的處理室空間的第 1泵3 03來從真空處理室302内排出。 另外，在本實施形態3中，雖氣體排出路非必須構成 要素，但亦可和實施形態1同樣，將氣體排出路設置於旋 轉體。此情況，除了上述第1泵3 03以外，在真空處理室 内與晶圓載置面側呈相反面側的處理室空間配置第2泵 304 ° 其次，說明有關圖7，8的構造以外的態樣。 (晶圓載置板的個數及集合形狀） -30- (28) 1297168 晶圓載置板1 Ο 1的個數可爲1或2個以上。當藉由驅 動部1 02而旋轉的晶圓載置板1 〇 1爲1個時，例如可爲圖 18(Β2)所示那樣在柱狀的驅動部102的幹部設置晶圓載置 板101之螺旋槳狀構造，或圖19(B)所示那樣在具有一個 分枝（手腕）的驅動部102的分枝前端設置晶圓載置板101 之樹木狀構造，或圖23〜25所示那樣晶圓載置板101由 1個圓盤狀的板所構成，在上述圓盤形狀的板的旋轉中心 設置驅動部1 02之構造。另外，爲了使圖面簡略化，有的 圖省略描繪一部份的氣體排除構件1 03。 當藉由驅動部1 02來旋轉的晶圓載置板1 〇 1爲2個以 上時，例如，可形成圖18(Α2)所示那樣在圓柱狀驅動部 1 02的幹部將3個晶圓載置板1 〇 1設置成放射狀的螺旋槳 狀構造，或圖19(A)或（C)所示那樣在具有4或8的分枝構 造的驅動部102的分枝前端設置4個或8個晶圓載置板 101的樹木狀構造，或圖21所示那樣在柱狀驅動部1〇2 的幹部，2個扇形晶圓載置板1 〇 1會以所定間隔的互相間 隙來設置的圓盤狀構造。 另外，圖7，圖23或圖24所示的圓盤狀構造，當然 亦可使用2個以上的晶圓載置板1〇1來形成。又，有關旋 轉體爲圓盤狀時的作用效果，及真空處理室内的較佳配置 是大致與上述實施形態1的情況相同。 (氣體排除用壁面的形狀） 氣體排除構件1 〇 3的氣體排除用壁面3 0，如上述， ?! -31 - (29) 1297168 只要是旋轉方向前方側的面，以和具有晶圓載置面1 〇 6的 一方面平行的面作爲基準面，具有大於90度小於180度 的仰角，而從一方面上升的面即可，並非限於上述圖8或 圖33(C)所示那樣的平面，亦可爲圖33(D)所示那樣的曲 面。並且，該氣體排除用壁面30只要能夠將衝突後的氣 體誘導至氣體排出路104，其表面可不爲鏡面狀，可設有 一些凹凸。 之所以使上述仰角大於90度，其理由是因爲若仰角 爲90度或未滿90度，則衝突於壁面的氣體分子會在平行 於晶圓載置面的方向或更下方方向受到反力，因此無法從 晶圓表面來將氣體分子排除至上方。另一方面，若爲仰角 大於1 80度的面，則不會成爲位於旋轉方向前方的壁面。 因此，上述仰角必須大於90度小於1 80度。 (氣體排除構件的全體形狀及配置態樣） 氣體排除構件1 03，例如可爲以下所示那樣的形狀及 配置。 氣體排除構件1 03並非限於圖8或圖1 7所示那樣的 方形構造，例如可爲圖32所示那樣的板狀構造。 又，氣體排除構件103，例如亦可爲圖17(C)或（D)所 示那樣，具有與晶圓載置面1 06平行的頂面，此頂面會與 氣體排除用壁面交叉之構造。若爲此構造，則氣體排除用 壁面與頂面會以90度以上的鈍角交叉，因此與銳角（未滿 90度）交叉時相較之下，氣體的衝突所造成該交叉部的劣 -32- (30) 1297168 化不易產生。但，當然亦可爲例如圖17(A)或（B)所示那樣 具有銳角的頂部之構造。 又，氣體排除構件1 〇3亦可爲與晶圓載置板1 〇 1 —體 設置的構造，且亦可爲使獨立的構件能夠固定或裝卸結合 的構造。在此，一體設置的構成，或使獨立的構件結合的 構成時之作用效果是與上述實施形態1同樣。 有關氣體排除構件1 03的高度是與上述實施形態1時 同樣。又，與上述實施形態1同樣地，例如圖9 (B)所示 那樣，當射出離子射束902的射束線處理室901的端部突 出於真空處理室3 02内時，最好使氣體排除構件1 〇3的外 緣與射束線處理室9 0 1的端部之間隙形成0.5 m m〜5 0 m m 程度。 有關對旋轉中心之氣體排除構件1 03的配置方面也是 與上述實施形態1時同樣，雖省略其詳細説明，但由防止 晶圓表面之氣體滯留的目的來看，此氣體排除構件103, 例如圖23所示，最好是設置於晶圓載置面1 06的旋轉方 向後方。又，例如圖24所示，更理想是在晶圓的旋轉方 向前方及後方配置有氣體排除構件103之構成。 又，氣體排除構件1 〇3可爲同心圓狀地對旋轉體的旋 轉中心配置2個以上的構成，例如圖25所示，亦可只設 置於以驅動部爲中心的放射線上的一部份之構成。 如以上説明，若爲本實施形態3的離子注入裝置，則 由於具有上述形狀的氣體排除用壁面3 0之氣體排除構件 103會由晶圓載置板101的一方面突出而設置，因此可藉 33- (31) 1297168 由晶圓載置板101的旋轉，使該氣體排除用壁面30 於晶圓載置板1 0 1的一方面側所存在的氣體，而使該 排除至晶圓載置面1 06的上方。 藉此，可從晶圓表面來排除自晶圓所發生的外氣 浮游於真空處理室内的外氣或環境氣體等的氣體。 果，可防止晶圓表面的氣體滯留，因此可抑止晶圓的 缺陷的發生或離子注入時的劑量偏移的發生。 〔追加説明〕 < 1 >在上述實施形態1〜3中，雖是顯示具有軸旋 驅動部之旋轉體，但本發明的驅動部並非限於此構成 要使能夠使1個以上的晶圓載置板1 01旋轉驅動的構 可。例如，亦可爲圖26所示那樣，圓環狀地使晶圓 板101驅動的傳送帶型旋轉體。另外，在圖26中， 使圖面簡略化，而未圖示氣體排除構件1 03或氣體排 104° <2>往晶圓注入離子時，爲了抑止溝道 (channeling)等，有時會控制其離子注入角度，此情 例如圖6所示，只要和具有固定軸3 0 1的驅動部1 〇2 傾斜晶圓載置板1 0 1即可。例如，使旋轉體1 00往黒 形符號或白色箭形符號的方向傾斜。 在傾斜旋轉體1 〇〇時，一方面爲了使晶圓載置板 的端部不會絆到真空處理室的内壁，另一方面又要充 小旋轉體1 〇〇的外周緣與真空處理室的内壁之間隔’ 衝突 氣體 ，或 其結 結晶 轉的 ，只 成即 載置 爲了 出路 效應 況， 一起 色箭 101 分縮 例如 (32) 1297168 圖6所示’只要使面向旋轉體丨〇〇的外周緣的真空處理室 的内壁彎曲成圓弧狀即可。另外，此圓弧是規定成以比從 旋轉體1 00的傾動中心到晶圓載置板1 〇〗的端部爲止的距 離更長的距離作爲其半徑。 上述貫5也形態1〜3中，顯不一'在真空處理室302 内突出配置旋轉體1 〇〇的離子注入裝置，但例如圖4，圖 5或圖29所示，亦可將上部具有開口部4〇4的副處理室 4〇2設置於真空處理室3〇2内，在此副處理室402内配置 旋轉體100。另外，此情況，經由開口部404來對晶圓 1〇5照射離子射束40 1 .3 05，藉由氣體排除構件103來遠 離晶圓表面的氣體會經由此開口部4 04來排出至副處理室 之外。另一方面，自氣體排出路104排出的氣體會通過覆 蓋旋轉體100的背面之把柄（sp〇ke)403的間隙來排出至副 處理室之外。 在此，藉由氣體排除構件1 03而遠離晶圓表面的氣體 最好不要在與該開口部404的端面衝突之下，再受到返回 晶圓表面那樣的反力。因此，在設置副處理室時，例如圖 29(B)所示，將開口部404的端面形狀形成氣體容易通過 開口部404來往副處理室外出去的形狀。 <4>雖上述實施形態1〜3的旋轉體已能取得充分的氣 體排除性能，但亦可如圖28(A)或（B)所示，另外更配置氣 體遮斷構件1 07，來作爲用以自晶圓表面排除氣體的構 件。此氣體遮斷構件1 07是在旋轉方向後方側具有氣體遮 斷壁面，在晶圓載置面的旋轉方向後方，由具有比氣體排 -35- (33) 1297168 除構件103更靠旋轉方向前方的晶圓載置面的一方面突出 設置，當氣體藉由與氣體排除構件1 03等的衝突來從旋轉 方向後方往前方移動時，可妨礙其進路來遠離晶圓表面。 另外，在設置氣體遮斷構件1 07時，是使其高度成爲 載置於晶圓載置板的晶圓高度（厚度）以下。這是因爲若形 成比晶圓更高，則氣體遮斷構件1 07的旋轉驅動方向前方 面會比晶圓更往上飛出，所以發生後的外氣會與該面衝 突，而使得氣體附著於晶圓的危險性變高。 <5>如上述，在此種的離子注入裝置中，自照相阻絕 層光罩發生的外氣雖不可避免，無法解除其發生，但自旋 轉體或構成真空處理室的零件的母材所產生的外氣（主要 金屬系）可藉由使用高純度的矽，碳化矽，石墨，氮化矽 或氧化矽來被覆該等構成零件的表面或母材本身爲上述材 料，來多少抑止其發生量。 如以上説明，若利用本發明，則可實現一種能夠合理 且迅速地從晶圓表面排除自晶圓發生的外氣，或浮游於真 空處理室内的外氣或殘留環境氣體等的氣體之離子注入裝 置。若利用此裝置，則可抑止晶圓的結晶缺陷的發生或離 子注入時的劑量偏移的發生，所以晶圓的製造良品率會顯 著地提升。因此，本發明的產業上的利用可能性大。 【圖式簡單說明】 圖1是表示本發明的旋轉體之一例的正面圖。 圖2是表示圖1的A-B線剖面之一例的端面圖。 -36- (34) (34)1297168 圖3是表示本發明的離子注入裝置之一例的剖面圖。 圖4是表示本發明的離子注入裝置之另一例的剖面 圖。 圖5是用以說明圖4的離子注入裝置的副處理室内之 驅動部的掃描方向的槪念圖。 圖6是表示本發明的離子注入裝置之另一例的剖面 圖。 圖7是表示本發明的旋轉體之另一例的正面圖。 圖8是表示圖7的C-D線剖面之一例的端面圖。 圖9是用以說明本發明的離子注入裝置的真空處理室 内之旋轉體的配置槪念圖。 圖1 〇是表示圖1的A-B線剖面之另一例的端面圖。 圖1 1是表示圖1的A-B線剖面之另一例的端面圖。 圖1 2是表示圖1的a - B線剖面之另一例的端面圖。 圖1 3是表示圖1的A-B線剖面之另一例的端面圖。 圖1 4是表示圖1的A-B線剖面之另一例的端面圖。 圖1 5是表示圖1的A-B線剖面之另一例的端面圖。 圖1 6是表示圖1的a - B線剖面之另一例的端面圖。 圖17是表示圖7的C-D線剖面之另一例的端面圖。 圖1 8是表示本發明的旋轉體之另一例的立體圖。 圖1 9是表示本發明的旋轉體之另一例的立體圖。 圖20是表示本發明的旋轉體之另一例的正面圖。 圖21是表示本發明的旋轉體之另一例的正面圖。 圖22是表示本發明的旋轉體之另一例的正面圖。 -37- (35) 1297168 圖23是表示本發明的旋轉體之另一例的正面圖。 圖24是表示本發明的旋轉體之另一例的正面圖。 圖25是表示本發明的旋轉體之另一例的正面圖。 圖26是表示本發明的旋轉體之另一例的立體圖。 圖27是表示本發明的旋轉體之另一例的正面圖。 圖28是表示圖27的E-F線剖面的端面圖。 匱· 2 9是用以說明本發明的離子注入裝置之另一例的 剖面圖’及該裝置的副處理室的開口部的形狀槪念圖。 圖30是表示圖丨的a-B線剖面之另一例的端面圖。 圖3 1是表示圖丨的a-B線剖面之另一例的端面圖。 圖32是表示圖7的C-D線剖面之另一例的端面圖。 圖3 3是用以說明有關氣體排除用壁面的仰角的槪念 圖’顯示圖1的A-B線剖面或圖7的C_D線剖面的端面 【主要元件符號說明】 1〇 :第1壁面 2〇 :第2壁面 30 :氣體排除用壁面 100 :旋轉體 1 0 1 :晶圓載置板 102 :驅動部 103 :氣體排除構件 104 :氣體排出路 -38- (36) 1297168 載置面 遮斷構件 的氣體 絕層所發生的外氣 軸 處理室Cs) -22- (20) 1297168 In order to improve the utilization efficiency of the storage space in the vacuum processing chamber, it is preferable that the outer edge of the gas-removing member 103 provided in the rotating body is close to the inner wall of the vacuum processing chamber, but the smoothness of the rotating body is considered. The gap between the outer edge of the gas-removing member 103 and the inner wall of the vacuum processing chamber is preferably about 0.5 mm to about 50 mm when rotating or placing a sufficient space necessary for arranging the rotating body in the vacuum processing chamber. Further, as shown in FIG. 9(A), when the end of the beam line processing chamber 902 that emits the ion beam 9〇2 protrudes into the vacuum processing chamber 3 〇2, the gas is removed for the same reason. The gap between the outer edge of the member 1 〇3 and the briber of the beam line processing chamber 9 〇1 is about 0·5 mm to 50 mm. (6) Arrangement of the gas-removing member for sealing the rotating center When the impurity dopant is partially implanted in the semiconductor wafer, the photo-resistive mask is applied to the surface of the wafer to irradiate the ion beam from above. Therefore, when the ion beam is irradiated, it is inevitable that outside air will occur from the photo resist layer mask. That is, since the main gas covering the vicinity of the surface of the wafer is the outside air generated from the crystal, it is important to arrange the gas removing member 103 at a position where the outside air can be quickly removed from the surface of the wafer. In order to efficiently exclude the external gas 202, for example, as shown in Fig. 20, it is preferable that the gas exhausting member 1 〇3 is disposed rearward in the rotational direction of the wafer mounting surface 106. If the gas removing member 103 is provided at this position, the generated outside air 202 collides with the first wall surface 1〇 of the gas removing member 1〇3, so that the outside air 202 can be quickly removed from the wafer surface. . In order to more reliably prevent gas retention on the wafer surface, for example, as shown in FIG. 23-(21) 1297168 18 (A1), FIG. 18 (B1), FIG. 21 or FIG. 22, preferably on the wafer mounting surface 106 A gas removal member 103 is also disposed in front of the rotation direction, that is, the gas removal member 103 is disposed in front of and behind the rotation direction of the wafer 1 〇5. The reason is as described above, because the above-mentioned floating gas 20 exists in the vacuum processing chamber 'except for the outside air 202 generated by the barrier layer. Therefore, by arranging the gas removing member 103 in front of the rotation direction of the wafer, it is possible to prevent The floating gas 201 flies toward the surface of the wafer. Further, in the first embodiment, the gas discharge path 104 and the gas-removing member i 〇3 are provided in pairs. Therefore, it is necessary to provide the gas discharge path 104 in front of the rotation direction of each of the gas-removing members 103, but for example, 18 (A1), FIG. 18 (B1), FIG. 20 or FIG. 22, a part of the wafer mounting plate 1 〇1 in front of the rotation direction of the gas removing member 103 may be cut out to form a through hole. This serves as a gas discharge path. Further, as shown in Fig. 18 (A1) or Fig. 18 (B1), a gap in front of the rotation direction of the wafer mounting plate 1〇1 may be utilized as the gas discharge path 1 〇4. Preferably, the gas-removing member 1 〇3 is a structure in which two or more structures are arranged concentrically with respect to the center of rotation of the rotating body. For this configuration, two or more gas-removing members 1 and 3 are arranged in a concentric circle. Shape, so the wafer can be arranged in a concentric shape. If the wafers are arranged in a concentric manner as described above, the rotation of the ion beam can be reduced, and the irradiation of the ion beam can be suppressed, so that the self-vacuum processing chamber or the rotating body can be suppressed. The effect of the absolute amount of external air generated by the member. Further, when two or more gas-removing members 103 are arranged in a concentric shape, the mass distribution of the rotating body is easy to balance the center of rotation, and as shown in Fig. 1, for example, -24-(22) 1297168 The gas removing members 103 are equally arranged. By arranging in this manner, the rotational movement of the wafer mounting plate 1 〇 1 is smooth, and the amount of irradiation (ion implantation amount) of the ion beams of the respective wafers to be mounted is easily uniform. Therefore, the fabrication yield of semiconductor wafers will increase. However, it is of course possible to arrange the configuration of the excluding member at a position that is not axisymmetric with respect to the center of rotation as shown, for example, in Fig. 21 or Fig. 22. (7) Arrangement of the gas-removing member for the gas discharge path. The gas-removing member 203 may be disposed rearward of the gas discharge path 104 in the direction of rotation, and may be discharged from the gas discharge path and the first wall surface 1 The gas of the collision is not limited to that shown in FIG. 2, and the first wall surface 10 of the gas-removing member 103 and the passage wall surface of the gas discharge path are arranged in a continuous manner. For example, as shown in Fig. 11, the bottom surface of the gas exhausting member 103 may be arranged to be offset from the passage wall surface of the gas discharge path. The gas discharge path 104 can discharge the gas colliding with the first wall surface 10 to the back side of the wafer mounting plate 1 〇 1, and the shape of the passage wall surface is not particularly limited. For example, it may be a shape shown in FIGS. 10(A) to (D), or a curved surface. However, the front side wall surface in the rotation direction of the gas discharge path 104 has a surface horizontal to the wafer mounting surface 106 as a reference surface, and preferably has an elevation angle of 90 degrees or more and 180 degrees. This is because if the elevation angle is less than 90 degrees, the gas entering the gas discharge path 104 is subjected to the reaction force pushed back to the wafer mounting surface side. Further, the rear side wall surface in the rotation direction of the gas discharge path 104 is, for example, as shown in Fig. 25-(23) 1297168 10(D), and the surface horizontal to the wafer mounting surface 106 is used as a reference surface, and preferably has a diameter greater than 90. The structure of the elevation angle less than 180 degrees. If it is constructed for this purpose, the discharge of gas is not easily hindered. However, the present invention is not limited to this configuration, and the gas that has collided with the first wall surface 10 for gas exclusion can be smoothly discharged to the back side of the wafer mounting plate 110, and may have a larger than twist degree of less than 180 degrees. The structure of the elevation angle (for the above reference plane). [Embodiment 2] In the second embodiment, the gas removing member has the first wall surface 1 〇 and the second wall surface for gas exclusion, which is different from the first embodiment. More specifically, the gas-removing member of the second embodiment is a surface other than the first wall surface 1 〇 of the gas-removing member 1300 of the first embodiment, and the second wall surface 20 for gas exclusion is provided on the surface on the front side in the rotation direction. It is composed of a plane or a curved surface having an elevation angle of more than 90 degrees and less than 180 degrees (a plane parallel to the wafer mounting surface 106 as a reference plane). More specifically, a rotating body in which the gas removing member 103 having such a second wall surface 20 is disposed will be described. Incidentally, the same matters as those in the first embodiment described above will be omitted below. The second wall surface 20 of the gas-removing member 103 of the second embodiment is an elevation angle of more than 90 degrees and less than 180 degrees (a surface parallel to the surface of the wafer mounting plate on which the gas-removing member is provided (on the one hand) is used as a reference surface). A plane or a curved surface. Specifically, for example, a plane as shown in FIG. 12(B), FIG. 14(B), FIG. 30(B) or FIG. 31(C), or for example, FIG. 13(A), FIG. 14(C)' 30 (C) or a curved surface as shown in Fig. 3 1 (B). (24) 1297168 The elevation angle of the second wall surface 20 is an angle formed by the surface of the second wall surface 20 parallel to the wafer mounting surface 106, and the parallel surface is used as the elevation angle of the reference surface. Further, similarly to the first embodiment, the gas-removing member 103 is not limited to a square structure, and may have a plate-like structure as shown in Fig. 30(c). Since the gas-removing member having the second wall surface 20 has the second wall surface 20 disposed above the first wall surface 1 ,, the wafer mounting plate 101 has a higher rotation than the first wall surface 10 by the rotation of the wafer mounting plate 101. The gas present at the location is excluded from the wafer mounting surface 106. As a result, gas molecules such as outside air which are present at a position higher than the height of the first wall surface 10 are separated from the upper surface of the wafer surface, so that gas retention in the vicinity of the wafer surface can be surely prevented. The gas-removing member 103, for example, as shown in Fig. 13(A), preferably has a shape in which the second wall surface 20 and the top surface of the gas-removing member 103, that is, the surface parallel to the surface of the wafer mounting plate 110, are continued. . In this case, since the second wall surface 20 forms an obtuse angle of 90 degrees or more with the top surface, the deterioration of the intersection portion is less likely to occur than when the intersection is at an acute angle (less than 90 degrees). However, of course, as shown in FIG. 12(B) or FIG. 14(C), the second wall surface 20 may have a shape of a top surface of the gas-removing member 103, and may cross the wall surface behind the rotation direction of the gas-removing member 203. In the shape of an acute angle. Further, the gas-removing member 1 0 3 may be formed to have an intersection with the second, for example, as shown in FIG. 12 (C), FIG. 13 (B), FIG. 15 (B), FIG. 16 (A) or (B). The shape of the third wall surface of the wall surface 20 and the elevation angle of the first wall surface 90 by 90 degrees. In the case of -27-(25) 1297168, the second wall surface 20 and the third wall surface, and the first wall surface 1 〇 and the third wall surface form an obtuse angle of 90 degrees or more, so that compared with the acute angle, The deterioration caused by the conflict of gases will be less. [Embodiment 3] The third embodiment of the present invention provides an ion implantation apparatus according to a second aspect of the present invention, comprising: a rotating body that rotates in a predetermined direction; and a vacuum processing chamber that accommodates the rotating body; and the pair of rotating bodies that are placed on the rotating body The wafer emits an ion beam emitting portion of the ion beam. This rotating body is different from the rotating body and the gas removing mechanism of the above-described first or second embodiment, but other matters are the same. Therefore, the following description will focus on the point different from the first embodiment. The rotating body includes one or two or more wafer mounting plates 110 having a wafer mounting surface 106 on one side, and a gas-removing wall surface protruding from one side of the wafer mounting plate 101. a gas exhausting member 103 of 30 and a driving unit that rotates the wafer mounting plate 1 〇1; the gas removing wall surface 30 is a front side in the rotational direction, and a plane including the wafer mounting surface 106 is A configuration having a plane or a curved surface that rises from the above aspect in an elevation angle greater than 90 degrees and less than 180 degrees. In the rotator of the third embodiment, the elevation angle of the gas-removing wall surface 30 is different from that of the rotator of the first embodiment, and the gas discharge path is not an essential constituent. Specific examples of the rotating body according to the third embodiment include, for example, those shown in Figs. 7 and 8. Here, Fig. 7 is a front view of the rotating body 1A, and Fig. 8 is a schematic view showing a cross section taken along the line C-D of Fig. 28-(26) 1297168. As shown in FIG. 7, the rotating body 100 includes: a wafer mounting plate 1 0 1 composed of one disk-shaped plate; and a driving center provided at a rotation center of the disk-shaped wafer mounting plate 1 0 1 And a gas-removing member 103 having a gas-removing wall surface 30 that protrudes from the wafer mounting plate 101 on the one side of the wafer mounting surface 106 and that is concentric with respect to the rotation center. Further, the gas-removing member 103 is disposed behind the rotation direction and in the rotation direction with the wafer mounting surface 1〇6 (wafer 105) interposed therebetween. Further, as shown in FIG. 8, the gas-removing wall surface 30 of the gas-removing member 1A is a surface on the front side in the rotational direction, and a surface parallel to the wafer-mounting surface 106 is used as a reference surface, and has 1 3 . An elevation angle of 5 degrees forms a plane that rises from the above aspect. Further, the elevation angle of the gas-removing wall surface 30 is, for example, as shown in Fig. 3 (C), which is a surface in which the gas-removing wall surface 30 is parallel to the wafer-mounting surface 1 0 6 or a surface parallel to the rotation direction. The angle of the plane with the parallel plane as the reference plane. Further, the gas-removing wall surface 30 has a flat shape as shown in Fig. 8, and has a certain elevation angle, which is 135 degrees in this example. Further, the height of the gas removing member 103 from the surface of the wafer mounting plate is higher than 〇5 mm. Further, an ion implantation apparatus having such a rotating body will be described. By the rotation of the wafer mounting plate 110, the external air 202 generated by the barrier layer, as shown in FIG. 8, will relatively move to the rear of the rotation direction, and the gas -29-(27) 1297168 body removing member 103 The gas is excluded by the wall 30. Here, since the gas-removing wall surface 30 of the gas-removing member 103 has an elevation angle of 135 degrees, the outside air 202 that collides with the gas-removing wall surface 30 faces the wafer-containing surface 1 〇6 in the rear direction in the rotation direction. In the case of directional movement to the top. As a result, the outside air 202 that collides with the gas exclusion wall surface 30 is excluded from the wafer surface. Further, the gas 20 1 floating in the vacuum processing chamber is relatively moved to the rear in the rotation direction in accordance with the rotation of the wafer mounting plate 101, but such floating gas 201 is relatively close to the wafer-containing mounting surface 106. Similarly to the outside air 202, a part of the planar gas collides with the gas-removing wall surface 30 of the gas-removing member 103 provided in the rotational direction of the wafer mounting surface 106, thereby preventing the approach and eliminating the crystal. Above the circular loading surface 106. Therefore, gas can be prevented from staying near the surface of the wafer. Here, the gas that is away from the upper side of the wafer mounting surface 106 is mainly discharged from the vacuum processing chamber 302 through the first pump 303 opened in the processing chamber space on the wafer mounting surface side in the vacuum processing chamber. Further, in the third embodiment, the gas discharge path is not necessarily a constituent element, but the gas discharge path may be provided in the rotating body as in the first embodiment. In this case, in addition to the first pump 303, the second pump 304 is disposed in the processing chamber space on the opposite side to the wafer mounting surface side in the vacuum processing chamber. Next, the aspects other than the structures of FIGS. 7 and 8 will be described. . (Number of wafer mounting plates and collective shape) -30- (28) 1297168 The number of wafer mounting plates 1 Ο 1 can be one or two or more. When there is one wafer mounting plate 1 〇1 that is rotated by the driving unit 102, the propeller of the wafer mounting plate 101 may be provided in the trunk portion of the columnar driving unit 102 as shown in FIG. 18 (Β2), for example. As shown in FIG. 19(B), the tree-shaped structure of the wafer mounting plate 101 is provided at the branching end of the driving unit 102 having one branch (wrist), or the wafer is placed as shown in FIGS. 23 to 25. The plate 101 is composed of a disk-shaped plate, and the structure of the driving portion 102 is provided at the center of rotation of the disk-shaped plate. Further, in order to simplify the drawing, some portions of the gas removing member 103 are omitted. When the number of the wafer mounting plates 1 〇 1 rotated by the driving unit 102 is two or more, for example, three wafers can be placed in the trunk of the cylindrical driving unit 102 as shown in FIG. 18 (Α2). The plate 1 〇 1 is provided in a radial propeller-like configuration, or as shown in FIG. 19 (A) or (C), four or eight crystals are provided at the branch front end of the driving portion 102 having a branching structure of 4 or 8. The tree-like structure of the circular mounting plate 101 or the disk-shaped structure in which the two sector-shaped wafer mounting plates 1 〇1 are provided at a predetermined interval in the trunk portion of the columnar driving portion 1〇2 as shown in FIG. 21 . Further, the disk-shaped structure shown in Fig. 7, Fig. 23 or Fig. 24 may of course be formed by using two or more wafer mounting plates 1〇1. Further, the effect of the case where the rotating body is in the shape of a disk and the preferable arrangement in the vacuum processing chamber are substantially the same as those in the first embodiment. (The shape of the gas-removing wall surface) The gas-removing member 1 的3 gas-removing wall surface 30, as described above, ?! -31 - (29) 1297168, as long as it is the front side in the rotation direction, and has the wafer mounting surface The one side parallel surface of the 〇6 is a reference surface having an elevation angle of more than 90 degrees and less than 180 degrees, and the surface rising from the one side is not limited to the plane shown in FIG. 8 or FIG. 33(C) above. It is also possible to have a curved surface as shown in Fig. 33(D). Further, the gas-removing wall surface 30 is not required to have a mirror-like surface as long as it can induce the collided gas to the gas discharge path 104, and may have some irregularities. The reason why the above-mentioned elevation angle is greater than 90 degrees is that if the elevation angle is 90 degrees or less than 90 degrees, the gas molecules colliding with the wall surface are subjected to a reaction force in a direction parallel to the wafer mounting surface or lower. Gas molecules cannot be removed from the surface of the wafer. On the other hand, if the surface has an elevation angle of more than 180 degrees, it will not be a wall surface located in front of the rotation direction. Therefore, the above elevation angle must be greater than 90 degrees and less than 180 degrees. (Total shape and arrangement of the gas-removing member) The gas-removing member 203 can be, for example, a shape and arrangement as shown below. The gas-removing member 203 is not limited to the square structure as shown in Fig. 8 or Fig. 17, and may be, for example, a plate-like structure as shown in Fig. 32. Further, the gas-removing member 103 may have a structure in which a top surface parallel to the wafer mounting surface 106 is formed so as to intersect the gas-removing wall surface, as shown in Fig. 17 (C) or (D). If it is configured for this purpose, the wall for gas exclusion and the top surface will intersect at an obtuse angle of 90 degrees or more, so that when the angle is crossed with an acute angle (less than 90 degrees), the conflict of the gas causes the intersection to be inferior -32 - (30) 1297168 is not easy to produce. However, it is of course possible to have a configuration having an acute top portion as shown, for example, in Fig. 17 (A) or (B). Further, the gas-removing member 1 〇3 may have a structure provided integrally with the wafer mounting plate 1 , 1 or a structure in which independent members can be fixed or detachably coupled. Here, the effect of the integrally provided configuration or the configuration in which the independent members are combined is the same as in the first embodiment. The height of the gas-removing member 203 is the same as that in the first embodiment described above. Further, similarly to the first embodiment, as shown in Fig. 9(B), when the end portion of the beamline processing chamber 901 that emits the ion beam 902 protrudes into the vacuum processing chamber 302, it is preferable to make the gas. The gap between the outer edge of the excluding member 1 〇3 and the end of the beam line processing chamber 902 forms 0.5 mm to 50 mm. The arrangement of the gas-removing member 103 for the center of rotation is also the same as that of the first embodiment, and the detailed description thereof is omitted. However, the gas-removing member 103 is, for example, for the purpose of preventing gas retention on the surface of the wafer. As shown in Fig. 23, it is preferable to be disposed behind the wafer mounting surface 106 in the rotation direction. Further, as shown in Fig. 24, for example, it is preferable that the gas removing member 103 is disposed in front of and behind the rotation direction of the wafer. Further, the gas-removing members 1 to 3 may have two or more configurations in which the center of rotation of the rotating body is concentrically arranged. For example, as shown in FIG. 25, it may be provided only in a part of the radiation centered on the driving portion. The composition. As described above, in the ion implantation apparatus of the third embodiment, the gas-removing member 103 having the gas-removing wall surface 30 having the above-described shape is provided by the wafer mounting plate 101 so as to be protruded from the wafer mounting plate 101. - (31) 1297168 The gas existing on the one side of the wafer mounting plate 110 is rotated by the rotation of the wafer mounting plate 101, and the gas is removed to the wafer mounting surface 106. Above. Thereby, the external air generated from the wafer and the outside air or the ambient gas floating in the vacuum processing chamber can be excluded from the wafer surface. As a result, gas retention on the surface of the wafer can be prevented, so that occurrence of defects in the wafer or dose shift at the time of ion implantation can be suppressed. [Additional Description] <1> In the above-described first to third embodiments, the rotating body having the pivoting drive unit is shown. However, the drive unit of the present invention is not limited to this configuration, so that one or more wafers can be mounted. The plate 1 01 is rotationally driven. For example, as shown in Fig. 26, the belt-type rotating body that drives the wafer board 101 in a ring shape may be used. In addition, in Fig. 26, the drawing surface is simplified, and the gas removing member 103 or the gas row 104 is not shown in the <2> when ions are implanted into the wafer, in order to suppress channeling or the like, sometimes The ion implantation angle is controlled. For example, as shown in FIG. 6, the wafer mounting plate 1 0 1 may be tilted with the driving portion 1 〇 2 having the fixed axis 301. For example, tilt the rotating body 100 toward the direction of the 符号 symbol or the white arrow symbol. When tilting the rotating body 1 ,, on the one hand, in order to prevent the end portion of the wafer mounting plate from hitting the inner wall of the vacuum processing chamber, on the other hand, the outer circumference of the rotating body 1 与 and the vacuum processing chamber are charged. The interval between the inner walls of the conflicting gas, or the crystallization of the knot, is only placed in order to be used for the way out, and the color arrows 101 are shrunk, for example, (32) 1297168, as shown in Figure 6, as long as the outer circumference of the rotating body is turned The inner wall of the vacuum processing chamber of the edge may be curved in an arc shape. Further, the arc is defined as a radius which is longer than the distance from the tilting center of the rotating body 100 to the end of the wafer mounting plate 1 . In the above-described fifth embodiment, in the first to third embodiments, the ion implantation apparatus in which the rotating body 1 is protruded in the vacuum processing chamber 302 is shown. However, as shown in FIG. 4, FIG. 5 or FIG. The sub-processing chamber 4〇2 of the opening 4〇4 is provided in the vacuum processing chamber 3〇2, and the rotating body 100 is disposed in the sub-processing chamber 402. Further, in this case, the wafer 1〇5 is irradiated with the ion beam 40 1 . . . 05 through the opening 404, and the gas which is away from the wafer surface by the gas removing member 103 is discharged to the sub-via via the opening portion 04. Outside the processing room. On the other hand, the gas discharged from the gas discharge path 104 is discharged to the outside of the sub-treatment chamber by the gap covering the handle 403 of the back surface of the rotary body 100. Here, it is preferable that the gas which is away from the surface of the wafer by the gas-removing member 103 is not subjected to a reaction force returning to the surface of the wafer under the collision with the end surface of the opening portion 404. Therefore, when the sub-processing chamber is provided, for example, as shown in Fig. 29(B), the end surface shape of the opening portion 404 forms a shape in which the gas easily passes through the opening portion 404 and goes out to the sub-processing chamber. <4> Although the rotating body of the above-described first to third embodiments can obtain sufficient gas-removing performance, as shown in Fig. 28 (A) or (B), the gas shutoff member 1 07 may be further disposed. As a member for removing gas from the surface of the wafer. The gas shutoff member 107 has a gas shutoff wall surface on the rear side in the rotation direction, and has a front side in the rotation direction of the gas row -35-(33) 1297168 except the member 103 in the rotation direction of the wafer mounting surface. On the one hand, the wafer mounting surface is protruded, and when the gas moves backward from the rotation direction by the collision with the gas removing member 103 or the like, the approach can be prevented from moving away from the wafer surface. Further, when the gas shutoff member 107 is provided, the height is set to be lower than the height (thickness) of the wafer placed on the wafer mounting plate. This is because if the formation is higher than the wafer, the front direction of the rotation of the gas shutoff member 107 will fly upwards more than the wafer, so that the external air after the collision will collide with the surface, so that the gas adheres. The risk of wafers becomes higher. <5> As described above, in such an ion implantation apparatus, the external air generated from the photo-shielding mask is unavoidable and cannot be removed, but the self-rotating body or the base material of the parts constituting the vacuum processing chamber The generated external air (main metal system) can be coated with the surface of the constituent parts or the base material itself by using high-purity niobium, tantalum carbide, graphite, tantalum nitride or niobium oxide as the above-mentioned materials, to somehow suppress the occurrence thereof. the amount. As described above, according to the present invention, it is possible to realize an ion implantation of a gas which can reasonably and quickly exclude external air generated from a wafer or floating outside the vacuum processing chamber or a residual ambient gas. Device. According to this device, the occurrence of crystal defects in the wafer or the occurrence of dose shift at the time of ion implantation can be suppressed, so that the yield of the wafer can be remarkably improved. Therefore, the industrial use of the present invention is highly likely. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front elevational view showing an example of a rotating body of the present invention. Fig. 2 is an end view showing an example of a cross section taken along line A-B of Fig. 1; -36- (34) (34) 1297168 Fig. 3 is a cross-sectional view showing an example of the ion implantation apparatus of the present invention. Fig. 4 is a cross-sectional view showing another example of the ion implantation apparatus of the present invention. Fig. 5 is a view for explaining a scanning direction of a driving portion in a sub-processing chamber of the ion implantation apparatus of Fig. 4; Fig. 6 is a cross-sectional view showing another example of the ion implantation apparatus of the present invention. Fig. 7 is a front elevational view showing another example of the rotating body of the present invention. Fig. 8 is an end view showing an example of a cross section taken along line C-D of Fig. 7; Fig. 9 is a view for explaining the arrangement of a rotating body in a vacuum processing chamber of the ion implantation apparatus of the present invention. Fig. 1A is an end view showing another example of a cross section taken along line A-B of Fig. 1. Fig. 11 is an end view showing another example of a cross section taken along line A-B of Fig. 1. Fig. 12 is an end view showing another example of a cross section taken along line a - B of Fig. 1. Fig. 13 is an end view showing another example of a cross section taken along line A-B of Fig. 1. Fig. 14 is an end view showing another example of a cross section taken along line A-B of Fig. 1. Fig. 15 is an end view showing another example of a cross section taken along line A-B of Fig. 1. Fig. 16 is an end view showing another example of a cross section taken along line a - B of Fig. 1. Fig. 17 is an end view showing another example of a cross section taken along line C-D of Fig. 7; Fig. 18 is a perspective view showing another example of the rotating body of the present invention. Fig. 19 is a perspective view showing another example of the rotating body of the present invention. Fig. 20 is a front elevational view showing another example of the rotating body of the present invention. Fig. 21 is a front elevational view showing another example of the rotating body of the present invention. Fig. 22 is a front elevational view showing another example of the rotating body of the present invention. -37- (35) 1297168 Fig. 23 is a front elevational view showing another example of the rotating body of the present invention. Fig. 24 is a front elevational view showing another example of the rotating body of the present invention. Fig. 25 is a front elevational view showing another example of the rotating body of the present invention. Fig. 26 is a perspective view showing another example of the rotating body of the present invention. Fig. 27 is a front elevational view showing another example of the rotating body of the present invention. Fig. 28 is an end elevational view showing a cross section taken along line E-F of Fig. 27;匮· 2 9 is a cross-sectional view for explaining another example of the ion implantation apparatus of the present invention, and a shape view of the opening of the sub-processing chamber of the apparatus. Fig. 30 is an end view showing another example of a cross section taken along line a-B of Fig.; Fig. 31 is an end view showing another example of a cross section taken along line a-B of Fig. Fig. 32 is an end view showing another example of a cross section taken along line C-D of Fig. 7; Fig. 3 is a view for explaining the elevation angle of the wall surface for gas exclusion. The end face of the line AB of Fig. 1 or the end face of the line C_D of Fig. 7 [Description of main components] 1. 第: 1st wall surface 2〇: Second wall surface 30: Gas exclusion wall 100: Rotating body 1 0 1 : Wafer mounting plate 102: Driving unit 103: Gas removal member 104: Gas discharge path - 38- (36) 1297168 Gas for mounting surface blocking member Outer air shaft processing chamber
1 〇 5 :晶圓 1 06 :晶圓 107 :氣體 2 0 1 :浮遊 2 02 :由阻 301 :固定 302 :真空 303 ：第 1 304 ：第 2 305 ， 401 ， 3 06 :離子 402 :副處 4 0 3 :把柄 404 :開口 泵 泵 902 :離子射束 射束射出部 理室 部 9 0 1 :射束線處理室1 〇 5 : Wafer 1 06 : Wafer 107 : Gas 2 0 1 : Floating 2 02 : Block 301 : Fixed 302 : Vacuum 303 : 1st 304 : 2nd 305 , 401 , 3 06 : Ion 402 : Deputy 4 0 3 : Handle 404 : Open pump 902 : Ion beam beam exit part chamber 9 0 1 : Beam line processing room