1295458 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種主動式光電元件結構及其驅動方 式，單一畫素中利用不對稱之二極體配置，及上/下畫素共 用一條選擇訊號線，搭配相對應的驅動電壓，達到控制電 壓與驅動液晶旋轉之目的。 【先前技術】 薄膜電晶體液晶顯示器（Thin Film Transistor Liquid Crystal Displayer ; TFT LCD)相較於扭轉向列 (Twisted-Nematic ； TN)、超扭 轉向列1295458 IX. Description of the Invention: [Technical Field] The present invention relates to an active photoelectric element structure and a driving method thereof, wherein an asymmetric diode configuration is used in a single pixel, and an upper/lower pixel sharing option is used. The signal line, with the corresponding driving voltage, achieves the purpose of controlling the voltage and driving the liquid crystal to rotate. [Prior Art] Thin Film Transistor Liquid Crystal Display (TFT LCD) compared to twisted nematic (Twisted-Nematic; TN), super-twisted steering column
(Supertwisted-Nematic; STN)等液晶顯示器（LCD)，因 TFT LCD為主動式驅動，所以具有省電、畫質佳、響應速度快 等優點，故逐漸成為液晶顯示器中的主流。 但，由於正常薄膜電晶體陣列基板(TFT array)的製程 最少需要五道光罩來完成，於是陣列（array)基板的製造成 本會高於傳統被動式驅動的液晶顯示器（LCD)。 於是有人就開始發展利用金屬-絕緣體-金屬 (Metal-Insulator-Metal ; MIM)薄膜二極體（Thin Film Diode ; TFD)的方式來取代薄膜電晶體(TFT)的角色，TFD 技術是由精工和愛普生公司開發出來，專門用在手機螢幕 上。它是TFT和STN的折衷’比STN的亮度和色彩飽和 度更好，也比TFT省電。最大特點是無論在關閉背光（反 射模式）或打開背光（透射模式）條件下都能提供高晝質、 易觀看的顯示，並具有低功耗、高晝質、高反應速度等優 1295458Liquid crystal displays (LCDs) such as (Supertwisted-Nematic; STN), because of the active driving of TFT LCD, have the advantages of power saving, good picture quality, fast response, etc., and thus gradually become the mainstream in liquid crystal displays. However, since the process of a normal thin film transistor array (TFT array) requires at least five masks to be completed, the cost of the array substrate is higher than that of a conventional passively driven liquid crystal display (LCD). Then some people began to develop the role of thin film transistor (TFT) by using Metal-Insulator-Metal (MIM) Thin Film Diode (TFD), which is made by Seiko and Developed by Epson, it is used exclusively on mobile screens. It is a compromise between TFT and STN, which is better than STN's brightness and color saturation, and also saves power than TFT. The biggest feature is that it can provide high-quality, easy-to-view display without turning off the backlight (reflective mode) or turning on the backlight (transmission mode), and has low power consumption, high quality, high response speed, etc. 1295458
_ 傳統的MIM LCD不需要搭配儲存電容，每一晝素 、 (Pixel)僅使用該畫素之液晶電容作為實料寫入的儲存裝 : 置’如此就可以完成主動式驅動液晶顯示器（LCD)的方 式。相較於TFT製程，MIM製程僅需2〜3道光罩即可完 成，佔有極高的成本優勢。 但，傳統MIM LCD會有灰階不易控制與影像殘留的 • 問題，於是美國專利US 6,222,596提出每一利用畫素(Pixel) 内具有對稱式的金屬-絕緣體-金屬二極體(MIM diodes)的 配置方式，使用兩條掃描線驅動一畫素(pixel)的方式，改 善了傳統MIM LCD灰階不易控制與影像殘留等問題的缺 點。 該美國專利US 6,222,596中，每列(row)畫素中的每一 畫素結構如「第1圖」所示，每個畫素中包含一共電極 (common electrode)9與晝素電極8，以及位於該共電極9 φ 兩電極中的液晶層7,及還有二組對稱於一接點12的金脣 .-絕緣體-金屬二極體(MIM diodes)10、11，及與共電極9 連接之資料線31，與各分別與每組金屬-絕緣體-金屬二極 體(撾1]^(^〇(168)10、11連接之選擇訊號線(86^(^1丨1^8)21、 22 〇 由於該美國專利US· 6,222,596中每一晝素内設有對 稱的金屬-絕緣體-金屬二極體(MIM diodes)，針對每一個晝 素是由一對選擇訊號線(select lines)21、22與單一資料線 31所構成。基於此設計規範(design rule)的限制，該美國 I295458 以22,596使用一對選擇訊號線㈣⑽lineS)2卜 區動、^4素的方^，將會使的每—畫素的有效發光 口率)相對減少。另因整體跑線數量變多，在後續 =路⑽焊接(bondlng)製程上也將是一大困擾，因為 :»配k多1C方能控制所有的電路，也需要較大的面 積二能有足夠的空間去設計控制電路，如此*僅僅在電路 上。又口 Hx為複雜，影響製造良率，所需的ic零配件也必 需增多’相對的所需的製程成本就 【發明内容】 爰疋，本發明之主要目的在於透過不對稱之二組薄膜 一極體及上/下晝素共用一條選擇訊號線的配置，搭配相對 應的驅動電壓，相較於傳統使用一對選擇訊號線驅動一晝 素的方式，可以減少一半的跑線(channd)數目，因跑線的 數^減少相對的所需的IC數量也減少，對於面板(pand) 後續之1C焊接製程上也較為方便，有效的降低所需要的 製程成本，減少製程上的困難度，降低設計上的複雜性。 本發明之另一目的在於本發明有效減少跑線的數 量’因跑線的數量減少相對的可以提高整體開口率與解析 度。 本發明之再一目的在於本發明有效減少跑線的數 量’並不會有習知兩條選擇訊號線並列，而可能有蝕刻不 完全的問題，如此可以提昇製程良率。 ’本發明係一種主動式光電元件結構及其驅動方式，係 針對顯示面板上矩陣排列之每一晝素，該畫素結構包括一 1295458 共電極與一晝素電極，以及位於兩電極中的液晶層，形成 一畫素儲存電容，且該共電極連接至一資料線。一組第一 薄膜二極體及一組第二薄膜二極體，且該第二薄膜二極體 之電性負載阻抗值為該第一薄膜二極體1〜5倍之倍數值， 又該第一薄膜二極體與第二薄膜二極體連接於一節點，且 該晝素電極亦連接至該節點。一選擇訊號線，該選擇訊號 線與該資料線相互垂直。 其中該第一薄膜二極體另一端與該選擇訊號線連 接，而該第二薄膜二極體另一端與下一橫列畫素之選擇訊 號線連接，形成上/下晝素共用一條選擇訊號線的配置。而 驅動方式為該選擇訊號線上選擇訊號為一正/負電壓值，且 該正/負電壓值之絕對值的最大值與最小值比與該倍數值 相同；即該正/負電壓值比的絕對值與該第二薄膜、第一薄 膜二極體間之倍數值或該倍數值倒數相同。 【實施方式】 茲有關本發明之詳細内容及技術說明，現配合圖式說 明如下： 請參閱「第2圖」所示，為本發明在2x2主動式矩陣 面板中具體的電路設計示意圖，資料線310、320將連接 到一縱列驅動元件300，選擇訊號線210、220、230連接 到一橫列選擇元件200。其中所有的資料線310、320在面 板上排列是相互平行的縱列樣態，所有的選擇訊號線 210、220、230在面板上排列是相互平行的橫列樣態，而 所有的資料線310、320與所有的選擇訊號線210、220、 8 1295458 230在面板上的排列是相互垂直交叉構成晝素nG、i2〇、 130 14G $成面板上複數個主動式矩陣排列之晝素⑽、 120、130、140 〇 該矩陣排列之晝素mo、130、140中每個晝素 内包含-共電極43與-晝素電極42 (以左上角第一個晝 素110為例）’以及位於兩電極中的液晶層41形成一畫素 儲存電容，且該共電極43連接至—資料線31G。還有一組 第一薄膜二極體44及一組第二薄膜二極體45，且該第二 薄膜二極體45之電性負載阻抗值為該第-薄膜二極體44 數倍之倍數值’且該倍數值為U，即該第二薄膜二極體 45之電性負載阻抗值為該第一薄膜二極體44的一倍以 上’五倍以下。而第一薄膜二極體44與第二薄膜二極體 45連接於一節點46 ’該晝素電極42亦連接至該節點46。 一選擇訊號線210,該選擇訊號線21〇與該資料線3忉 :互垂直；其中該第一薄膜二極體44另—端與該選 旎線210連接，而該第二薄膜二極體45另一端與下一 * 列晝素120之選擇訊號線220連接，形成上/下晝 >素 120共用一條選擇訊號線22〇的配置。 及 其中該第-薄膜二極體44及第二薄膜二極體 金屬-絕緣體-金屬（MIM )結構之非線性電阻二極體人节馬 絕緣體·金屬（MIM)結構是經由鍍膜而成的，利用化幾金屬_ 沉積法來製作出氮化矽（SiNx)，形成具氮化矽（s^孥氣相 的非線性電阻二極體，該MIM結構之非線性電X)結構 與傳統型的二極體結構比較會有較優的電济 〜極體 (I^V) 1295458 特性比，且佔據較小的電容空間，因此單一晝素能有較好 的開口率。製造上該第一薄膜二極體44與該第二薄膜二 極體45各可為單一薄膜二極體所形成，亦各可為多個薄 膜二極體所組成。例如該第一薄膜二極體44為單一薄膜 二極體，而該第二薄膜二極體45由三個相同規格的薄膜 二極體所組合，形成該第二薄膜二極體45的電性負載阻 抗值為該第一薄膜二極體44三倍之結構。_ The traditional MIM LCD does not need to be equipped with a storage capacitor. Each pixel (Pixel) uses only the pixel capacitor of the pixel as a storage device for the real material: “This allows the active drive liquid crystal display (LCD) to be completed. The way. Compared with the TFT process, the MIM process can be completed with only 2~3 masks, which has a very high cost advantage. However, the conventional MIM LCD has a problem that the gray scale is difficult to control and the image remains. Therefore, U.S. Patent No. 6,222,596 proposes a symmetrical metal-insulator-metal diode (MIM diodes) in each pixel (Pixel). The configuration method uses two scanning lines to drive a pixel, which improves the shortcomings of the conventional MIM LCD gray scale, which is difficult to control and image sticking. In US Pat. No. 6,222,596, each pixel structure in each row of pixels is shown in FIG. 1 , and each pixel includes a common electrode 9 and a halogen electrode 8 , and a liquid crystal layer 7 located in the two electrodes of the common electrode 9 φ, and two sets of gold lips symmetrical to a contact 12, insulator-metal diodes 10, 11, and connected to the common electrode 9. The data line 31, and each of the selected signal lines (86^(^1丨1^8) 21 connected to each group of metal-insulator-metal diodes (1)^(^〇(168)10,11 respectively 22 〇 Because each of the elements in US Pat. No. 6,222,596 is provided with symmetrical metal-insulator-metal diodes (MIM diodes), for each element, a pair of select lines are selected. 22, and a single data line 31. Based on the design rule, the US I295458 uses 22,596 pairs of selected signal lines (4) (10) lineS) 2 areas, ^4 elements, will be The effective illuminating rate of each pixel is relatively reduced. In addition, the number of overall running lines is increased, and it will be one in the subsequent =10 (bond) process. Troubled because: » With k more 1C can control all the circuits, also need a larger area 2 can have enough space to design the control circuit, so * only on the circuit. And the mouth Hx is complex, affecting the manufacturing yield The required ic parts must also increase 'relatively required process cost'. [Inventive content] 爰疋, the main purpose of the present invention is to share a strip through the asymmetric two sets of thin film ones and upper/lower ones. Selecting the configuration of the signal line, with the corresponding driving voltage, can reduce the number of channds by half, compared to the traditional way of using a pair of selective signal lines to drive a pixel, because the number of running lines is reduced. The required number of ICs is also reduced, which is also convenient for the subsequent 1C soldering process of the panel, effectively reducing the required process cost, reducing the difficulty in the process, and reducing the complexity of the design. It is an object of the present invention to effectively reduce the number of running lines. The overall aperture ratio and resolution can be improved by reducing the number of running lines. A further object of the present invention is to effectively reduce the present invention. The number of running lines does not have the conventional two-choice signal lines juxtaposed, and there may be problems of incomplete etching, which can improve the process yield. 'The invention is an active photoelectric element structure and its driving method, For each element of the matrix arrangement on the display panel, the pixel structure comprises a 1295458 common electrode and a halogen electrode, and a liquid crystal layer located in the two electrodes to form a pixel storage capacitor, and the common electrode is connected to a data line, a set of first film diodes and a set of second film diodes, and the electrical load resistance value of the second film diode is 1 to 5 times the value of the first film diode The first thin film diode and the second thin film diode are connected to a node, and the halogen electrode is also connected to the node. A selection signal line is perpendicular to the data line. The other end of the first thin film diode is connected to the selected signal line, and the other end of the second thin film diode is connected to the selected signal line of the next horizontal pixel to form an upper/lower pixel sharing a selection signal. Line configuration. The driving mode is that the selection signal on the selection signal line is a positive/negative voltage value, and the maximum value and the minimum value of the absolute value of the positive/negative voltage value are the same as the multiple value; that is, the ratio of the positive/negative voltage value The absolute value is the same as the multiple of the second film and the first film diode or the reciprocal of the multiple. [Embodiment] The detailed description and technical description of the present invention will now be described as follows: Please refer to "Fig. 2" for a detailed circuit design diagram of the 2x2 active matrix panel of the present invention, data line 310, 320 will be coupled to a column drive element 300, and the selection signal lines 210, 220, 230 are coupled to a row selection element 200. All of the data lines 310 and 320 are arranged in parallel on the panel, and all the selected signal lines 210, 220, and 230 are arranged on the panel in parallel rows, and all the data lines 310 are arranged. , 320 and all the selection signal lines 210, 220, 8 1295458 230 arranged on the panel are perpendicular to each other to form a pixel nG, i2 〇, 130 14G $ into a plurality of active matrix arrays of pixels (10), 120 130, 140, 矩阵, each of the elements arranging the matrix mo, 130, 140 includes a - common electrode 43 and a halogen element 42 (in the upper left corner, the first element 110 is taken as an example) 'and two The liquid crystal layer 41 in the electrode forms a pixel storage capacitor, and the common electrode 43 is connected to the data line 31G. There is also a set of first thin film diodes 44 and a set of second thin film diodes 45, and the electrical load resistance value of the second thin film diodes 45 is a multiple of the multiple of the first thin film diodes 44. And the value of the multiple is U, that is, the electrical load resistance value of the second thin film diode 45 is more than one time 'more than five times the first thin film diode 44'. The first thin film diode 44 and the second thin film diode 45 are connected to a node 46'. The halogen electrode 42 is also connected to the node 46. a selection signal line 210, the selection signal line 21〇 and the data line 3忉: mutually perpendicular; wherein the first film diode 44 is further connected to the selection line 210, and the second film diode The other end of the 45 is connected to the selection signal line 220 of the next * column 120 to form a configuration in which the up/down 昼 素 120 shares a selected signal line 22 。. And the varistor diode metal insulator/metal (MIM) structure of the first-thin film diode 44 and the second film diode metal-insulator-metal (MIM) structure is formed by coating, A tantalum nitride (SiNx) is formed by a few metal deposition methods to form a non-linear resistor diode having a tantalum nitride (s^孥 gas phase, a nonlinear electric X structure of the MIM structure) and a conventional type Compared with the diode structure, the diode structure has a better ratio of the capacitance to the polar body (I^V) 1295458 and occupies a small capacitance space, so that a single halogen can have a good aperture ratio. Each of the first thin film diodes 44 and the second thin film diodes 45 may be formed of a single thin film diode, and each of the plurality of thin film diodes may be composed of a plurality of thin film diodes. For example, the first thin film diode 44 is a single thin film diode, and the second thin film diode 45 is combined by three thin film diodes of the same specification to form the electrical properties of the second thin film diode 45. The load impedance value is three times that of the first thin film diode 44.
I 本發明之驅動方式為該選擇訊號線210上之選擇訊號 為一正/負電壓值，且該正/負電壓值之絕對值的最大值與 最小值比與該倍數值相同。即，取正電壓之絕對值與負電 壓之絕對值，且此兩絕對值之最大值與最小值比，與該第 二薄膜二極體45及第一薄膜二極體44間電性負載阻抗值 之倍數值相同。 本發明應用MIM非線性電阻二極體來驅動AMLCD 之每一晝素，單一晝素受一對選擇訊號線和一條資料線控 制，且第二薄膜二極體45之電性負載阻抗值為該第一薄 膜二極體44約為1倍以上，5倍以下之倍數值之非對稱形 態，利用MIM二極體結構特性變化來控制電壓、驅動液 晶旋轉。 如「第3圖」所示，當第一個畫素110上/下之選擇訊 號線210及220分別輸入選擇訊號SN_i及SN驅動第一個 畫素1Γ0時，資料線310之資料訊號(Data)輸入即可驅使 第一個晝素110動作。而當第二個晝素120要驅動時，則 利用第二個晝素120上/下之選擇訊號線220及230上之選 I295458 擇訊號sN及sN+1來驅動。因此在驅動方面單一晝素的第 . 一薄膜二極體44所接受的選擇訊號線之選擇訊號取決於 • 上一個晝素下方選擇訊號線之選擇訊號，即每個畫素要驅 • 動時的資料訊號(Data)輸入時，其第一薄膜二極體44的一 i^為上一級選擇訊號線提供，而第二薄膜二極體44另一 端的選擇訊號將再提供給下一個晝素驅動時所使用。 請參閱「第4圖」所示，為本發明之第一實施樣態之 • 不思圖。以該第二薄膜二極體45之電性負載阻抗值為該 第—薄膜二極體44倍數值為三倍為例，根據本發明之驅 動方式為該選擇訊號線上選擇訊號的正/負電壓值之絕對 值的最大值與最小值比與該倍數值相同之原則，該選擇訊 旎的正電壓值為10V，負電壓值為_30V。所以，當在τι 擇訊號線21〇上之選擇訊號I電壓為丄評、 +' °孔號線220上之選擇訊號SN電壓為_3〇v，因該第一 ^膜二極體44與第二薄膜二極體45之單—元件大1特性 修相同，所以二組薄膜二極體會形成平均分壓狀態，此時節 點仏的電壓會為0V。當資料訊號31〇在τι日夺間點時輸 入3V之電壓’此時共電極43與晝素電極42間就產生π 的電壓差，此3V的電壓差將造成晝素11〇夾於該共電極 43與晝素電極42間液晶層41内液晶分子的旋轉，在此同 時選擇訊號線230以下的訊號皆為〇v。 在T2時間點時選擇訊號線22〇上之選擇訊號心電壓 為㈣、選擇訊號線230上之選擇訊號s叫電壓為-爾， 所以此時晝素12〇内之節點46的電壓會為〇v。當資料訊 11 1295458 號310在T2時間點時輸入-3V之電壓，此時位於晝素110 下方之晝素120的共電極43與晝素電極42間就產生3V 的電壓差’此3 V的電壓差相同的也造成液晶層41内液晶 分子的旋轉。在此同時選擇訊號線210之選擇訊號SN-1 電壓為0V，晝素110内之、節點46與共電極43仍會保存有 3V的電壓差，所以晝素110依然保持上一個晝面。 請參閱「第5圖」所示，為本發明之第二實例之示意 圖。同第一實例以該第二薄膜二極體45之電性負載阻抗 值為該第一薄膜二極體44倍數值為三倍為例，根據本發 明之驅動方式為該選擇訊號線上選擇訊號的正/負電壓值 之絕對值的最大值與最小值比與該倍數值相同之原則，該 選擇訊號的負電壓值為-10V，正電壓值為30V。所以，當 在T1時間點時選擇訊號線210上之選擇訊號SN_i電壓為 -10V、選擇訊號線220上之選擇訊號SN電壓為30V，因該 第一薄膜二極體44與第二薄膜二極體45之單一元件特性 相同，所以二元件組會形成平均分壓狀態，此時節點46 的電壓會為0V。當資料訊號310在T1時間點時輸入3V 之電壓，此時共電極43與晝素電極42間就產生3V的電 壓差，此3V的電壓差將造成晝素110夾於該共電極43與 畫素電極42間液晶層41内液晶分子的旋轉，在此同時選 擇訊號線230以下的訊號皆為0V。 在T2時間點時選擇訊號線220上之選擇訊號SN電壓 為-10V、選擇訊號線230上之選擇訊號SN+1電壓為30V， 所以此時畫素120内之節點46的電壓會為0V。當資料訊 12 1295458 號310在T2時間點時輸入-3V之電壓，此時位於畫素110The driving method of the present invention is that the selection signal on the selection signal line 210 is a positive/negative voltage value, and the maximum value and the minimum value of the absolute value of the positive/negative voltage value are the same as the multiple value. That is, taking the absolute value of the positive voltage and the absolute value of the negative voltage, and the ratio of the maximum value to the minimum value of the two absolute values, and the electrical load impedance between the second thin film diode 45 and the first thin film diode 44 The value of the value is the same. The invention applies the MIM varistor diode to drive each element of the AMLCD, and the single element is controlled by a pair of selected signal lines and a data line, and the electrical load impedance value of the second film diode 45 is The first thin film diode 44 is an asymmetrical form having a value of about 1 time or more and a multiple of 5 times or less, and the voltage is controlled by the change in the structural characteristics of the MIM diode to drive the liquid crystal to rotate. As shown in "Figure 3", when the selected signal lines 210 and 220 of the first pixel 110 are input to the selection signal SN_i and the SN drives the first pixel 1Γ0, the data signal of the data line 310 (Data) The input can drive the first element 110 to operate. When the second element 120 is to be driven, it is driven by the selection of the I295458 selection signals sN and sN+1 on the selection signal lines 220 and 230 of the second element 120. Therefore, the selection signal of the selected signal line accepted by the first thin film diode 44 in the driving aspect depends on the selection signal of the selected signal line under the previous element, that is, each pixel is driven. When the data signal is input, one of the first thin film diodes 44 is provided for the upper level selection signal line, and the other end of the second thin film diode 44 is supplied to the next pixel. Used when driving. Please refer to Fig. 4, which is the first embodiment of the present invention. For example, the electrical load impedance value of the second thin film diode 45 is three times the value of the first film diode. The driving mode according to the present invention is to select the positive/negative voltage of the signal on the selected signal line. The maximum value and the minimum value of the absolute value of the value are the same as the value of the multiple value. The positive voltage value of the selection signal is 10V, and the negative voltage value is _30V. Therefore, when the voltage of the selection signal I on the τι select signal line 21〇 is 丄, the selection signal SN voltage on the +'° hole number line 220 is _3〇v, because the first film diode 44 is The characteristics of the single-element large 1 of the second thin film diode 45 are the same, so that the two sets of thin film diodes form an average partial voltage state, and the voltage of the node 仏 will be 0V. When the data signal 31〇 is input to the voltage of 3V at the τι day, the voltage difference between the common electrode 43 and the halogen electrode 42 is generated. The voltage difference of 3V will cause the pixel to be sandwiched between the two. The rotation of the liquid crystal molecules in the liquid crystal layer 41 between the electrode 43 and the halogen electrode 42 is simultaneously selected as the signal 以下v below the signal line 230. At the time T2, the selection signal voltage on the signal line 22 is (4), and the selection signal on the signal line 230 is called the voltage, so the voltage of the node 46 in the pixel 12〇 will be 〇 v. When the data signal 11 1295458 310 inputs a voltage of -3V at the time T2, a voltage difference of 3V is generated between the common electrode 43 of the halogen 120 below the halogen element 110 and the halogen electrode 42. The same voltage difference also causes the rotation of the liquid crystal molecules in the liquid crystal layer 41. At the same time, the voltage of the selection signal SN-1 of the signal line 210 is selected to be 0V, and the node 46 and the common electrode 43 in the halogen element 110 still have a voltage difference of 3V, so the halogen element 110 remains on the upper side. Please refer to Fig. 5 for a schematic view of a second example of the present invention. For example, the electrical load resistance value of the second thin film diode 45 is three times that of the first thin film diode. The driving method according to the present invention is to select the signal on the selected signal line. The maximum value and the minimum value of the absolute value of the positive/negative voltage value are the same as the multiple value. The negative voltage value of the selection signal is -10V, and the positive voltage value is 30V. Therefore, when the T1 time point is selected, the voltage of the selection signal SN_i on the signal line 210 is -10V, and the voltage of the selection signal SN on the selection signal line 220 is 30V, because the first film diode 44 and the second film diode are The single component of the body 45 has the same characteristics, so the two component groups form an average voltage division state, and the voltage of the node 46 will be 0V. When the data signal 310 is input with a voltage of 3V at the time T1, a voltage difference of 3V is generated between the common electrode 43 and the halogen electrode 42. The voltage difference of 3V will cause the pixel 110 to be sandwiched between the common electrode 43 and the picture. The rotation of the liquid crystal molecules in the liquid crystal layer 41 between the element electrodes 42 simultaneously selects the signals below the signal line 230 to be 0V. At the time T2, the selection signal SN voltage on the signal line 220 is -10V, and the selection signal SN+1 voltage on the selection signal line 230 is 30V, so the voltage of the node 46 in the pixel 120 will be 0V. When the data message 12 1295458 310 enters the voltage of -3V at the time T2, it is located at the pixel 110.
' 下方之畫素120的共電極43與晝素電極42間就產生3V : 的電壓差，此3V的電壓差相同的也造成液晶層41内液晶 : 分子的旋轉。在此同時選擇訊號線210之選擇訊號SN-i電 壓為0V，晝素110内之節點46與共電極43仍會保存有 3V的電壓差，所以晝素11〇依然保持上一個晝面。 綜合前述之結構與驅動方式，本發明整個電路設計上A voltage difference of 3V : is generated between the common electrode 43 of the pixel 120 below and the halogen electrode 42 . The same voltage difference of 3 V also causes the liquid crystal in the liquid crystal layer 41 to rotate. At the same time, the selection signal SN-i voltage of the signal line 210 is selected to be 0V, and the node 46 and the common electrode 43 in the halogen element 110 still have a voltage difference of 3V, so the pixel 11〇 remains the same. Combining the foregoing structure and driving method, the entire circuit design of the present invention
能減少選擇訊號線的數量，與美國專利US. 6,222,596所述 W 之方式本發明可以減少一半的跑線(channel)數目，就因為 跑線的數量減少相對的所需的1C數量也減少，對於面板 (panel)後續之1C焊接製程上也較為方便，有效的降低所 需要的製程成本，減少製程上的困難度，降低設計上的複 雜性。同時面板(panel)上跑線的數量減少，相對的可以提 高整體開口率與解析度。也因為跑線數量的減少，對於一 般跑線可能有蝕刻不完全的問題也將大為降低，如此可以 φ 提昇製程良率。 惟上述僅為本發明之較佳實施例而已，並非用來限定 本發明實施之範圍。即凡依本發明申請專利範圍所做的均 等變化與修飾，皆為本發明專利範圍所涵蓋。 【圖式簡單說明】 f 1圖’為US· 6,222,596中-晝素之電路示意圖。 第2圖，為本發明之液晶顯示裝置之電路示意圖。 第3圖，為本發明之上/下相鄰晝素之結構示意圖。 第4圖，為本發明之第一實施例之示意圖。 1295458 第5圖，為本發明之第二實施例之示意圖。 【主要元件符號說明】 (習知） 7 :液晶層 8 :晝素電極 9 :共電極 10、11 :金屬-絕緣體-金屬二極體 12 :接點The number of selected signal lines can be reduced, and the method of the invention described in US Pat. No. 6,222,596 can reduce the number of channels by half, because the number of running lines is reduced relative to the required number of 1Cs. The subsequent 1C welding process of the panel is also convenient, effectively reducing the required process cost, reducing the difficulty in the process, and reducing the complexity of the design. At the same time, the number of running lines on the panel is reduced, and the overall aperture ratio and resolution can be relatively increased. Also, because the number of running lines is reduced, the problem of incomplete etching may be greatly reduced for the general running line, so that the process yield can be improved by φ. The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention. [Simple description of the diagram] The f 1 diagram is a schematic diagram of the circuit of the 昼-昼 in US 6,222,596. Fig. 2 is a circuit diagram of a liquid crystal display device of the present invention. Figure 3 is a schematic view showing the structure of the upper/lower adjacent halogen of the present invention. Figure 4 is a schematic view of a first embodiment of the present invention. 1295458 Figure 5 is a schematic view of a second embodiment of the present invention. [Main component symbol description] (General) 7: Liquid crystal layer 8: Alizarin electrode 9: Common electrode 10, 11: Metal-insulator-metal diode 12: Contact
21、22 :選擇訊號線 31 :資料線 (本發明） 110、120、130、140 ·•畫素 200 :橫列選擇元件 210、220、230 :選擇訊號線 300 :縱列驅動元件 310、320 :資料線 41 :液晶層 42 :晝素電極 43 :共電極 44 ·•第一薄膜二極體 45 :第二薄膜二極體 40 :節點21, 22: Select signal line 31: data line (present invention) 110, 120, 130, 140 · • pixel 200: row selection elements 210, 220, 230: selection signal line 300: column drive elements 310, 320 : data line 41: liquid crystal layer 42: halogen electrode 43: common electrode 44 • first thin film diode 45: second thin film diode 40: node
Sn-i、Sn、Sn+i :選擇訊號 14Sn-i, Sn, Sn+i: Select signal 14