TWI292965B - Multi-band tunable phase shifter composed of micromachined varactors and tunable inductors - Google Patents

Description

1292965

V. INSTRUCTION DESCRIPTION OF THE INVENTION (2) Technical Field of the Invention The present invention is a microelectromechanical phase shifter that can be applied to multiple frequencies, in particular, variable capacitance and variable inductance using high rate of change and high Q value. Series-parallel to ^ phase shifter, due to very low insertion loss and high phase shift, can be applied to multi-band 'this multi-frequency phase shifter can be integrated into a single integrated circuit chip of communication' can be widely used in wisdom Antenna or other communication field. [Prior Art] In recent years, due to the opening of many communication bands and networks, coupled with the development of semiconductor CMOS processes, wireless communication systems are oriented toward light, thin, short, small and multi-band (Multi-Band), multi-mode ( Multi-Mode), easy to mass-produce, and the development cost can be reduced. In particular, the development of personal wireless communication systems is increasing. For mobile phones, ffiGSM 9〇〇MHz and 1 800MHz operating frequencies, Bluetooth (Bluet〇〇th), IEEE 8ϋ2· lib, IEEE802·15·3, etc. operate at 2.4GHz. Frequency band, wireless local area network (WLNA) IEEE802.1 1 a operation in the 5.2GHz frequency band, in order to push the communication quality to the peak in these frequency bands, the use of smart antenna is one of the feasible solutions, and the phase shift The development of the device is one of the key components of the smart antenna. The following are several related phase shifter patents, which outline their methods and features: '1, (US6665353, NISBET JOHN J (CA), SIRENZA MICRODEVICES INC (US) Quadrant switching method for phase shifter W003052861 (Al)

1292965 V. INSTRUCTIONS (3) 2003-12-16) The phase change described in this patent is to allow the user to first select a fixed phase, where the so-called fixed phase refers to 〇. , soil 9 0. , soil 1 800. Then take this fixed phase as the starting point and use 丨8 〇. Phase change phase shifter to achieve the desired phase. The phase shifter architecture contains 9 turns. Phase difference network, rf coating circuit, weighting network, is a class

An active phase shifter based on a digital circuit, where the input signal enters 90. After the phase difference network, two kinds of signals are generated, and at this time, the weighting network generates a weighting signal according to the voltage control signal, and finally the three signals are combined into an output signal by the RF hybrid circuit, and the voltage control signal becomes A mechanism for controlling this variable phase shifter. Its characteristics are low cost, user-selective phase, low noise and small area.

(EP1368893, SAYYAH KEYVAN (US), CONTINUOUSLY TUNABLE PHASE SHIFTER, 2003-12-10 HRL LAB LLC) This patent is a phase shifter with continuous phase change and is divided into two parts. The first part is a coarse-tuned phase shifter made by MEMS switch and delay line (Delay Une), which is designed to make a large phase change. The second part uses a resistor (for a light conductor, it depends on the light energy). The RLC network is composed of a combination of capacitance and inductance (spiral inductance) for the phase fine-tuning action. Its function is to provide an additional fine phase change only, and the phase range is 〇. ~45. If supplemented by the first part of the coarse adjustment

1292965 V. INSTRUCTIONS (4) The device can perform a phase change with a large rate of change and continuity. The advantage of this form of phase shifter is that the operating bandwidth is large, the phase changes linearly with frequency, low loss, high rate of change, and can be applied to high and low frequency bands. The main disadvantage is that the area is larger because it is up to 3 6 〇. The phase change requires a total of ten switches, two capacitors, and phase delay lines of different lengths, etc., so the area is slightly larger in the field of wireless communication. (US2003/0227353, Nader Fayyaz and Ottawa (CA), Variable phase shifter and a system using variable phase shifter, 2003-12-11) The variable phase shifter described in this patent contains a fixed phase shifter, f moving The 7G device (amplifier), the mixer and a bias controller can be used in the front-end system of the smart antenna or in the RF circuit because it can be integrated on the system single chip. The phase change is mainly generated by giving a bias signal to the bias controller to generate a phase control signal for controlling the gain and phase of the active component signal, and finally combining the output signals of the active components via the mixer. The output signal is therefore an active shifter. There are two main ways of the known phase shifters. The first one is to make an active phase shifter using the architecture of the active circuit. Refer to the journal article (A. Wittneben, "Smart antennas for low cost wireless communications,"Frequenz, vol· 54,no·b 2, pp·58-64, Jan.~Feb· 2〇〇〇), and The above three patents before the case. 1292965 V. INSTRUCTIONS (5) In general, active phase shifters mostly have the following problems: large circuit loss, large loss variation, large circuit area, large power consumption, complex control, multiple sets of voltage control, and Bandwidth limit. The second is to make a phase shifter using passive component technology. Reference may be made to the journal paper (Ellinger, F· ; Jackel, H. ; Bachtold, W.; nVaractor-loaded transmission-line phase shifter at C-band using lumped elements’’,

Microwave Theory and Techniques, IEEE Transactions on , Volume: 51 Issue: 4 , April 2003 Page(s): 1 1 35 -1 1 40 ). Mainly use lumped elements (iumpe (j elements) to establish a phase shifter, using the rate of change of gallium arsenide (Ga As) variable capacitance, so that the phase shifter achieves a small angle phase change, and then by level 6 The series connection reaches a phase change of 360. The disadvantage is that the loss of the single-stage phase shifter is large and the phase change is too small because of the low rate of change of capacitance, and multi-stage series is required for a larger phase change. It also makes the loss more. Others use a combination of different length delay lines (delay iine) or a fixed combination of inductors and capacitors to make a phase shifter, but the area is very large and the loss is not small. The technology should simultaneously make the phase: small change and small area, low loss and practical use of the product; there is still a lot of difficulty; not to mention the function of multi-frequency multi-mode. The purpose of the present invention is: • and can be used in multiple frequencies Under the mode operation, still have the mouth mouth. The invention can provide a new phase shifter form, and then cooperate with the standard 1292965. 5. The invention description (6) CMOS process technology and MEMS several post-processes, so that the phase shifter not only has Continuity of 3 60 ° phase It is also low in loss, and its process compatibility is not limited to CMOS process or other standard semiconductor integrated circuit process, and can be realized by using other processes such as MUMPS, SMart, MPMC, etc. [Summary] The main purpose of the present invention is to provide a phase shifter with small area, low loss, wide frequency and south phase change.

Another object of the present invention is to provide a multi-frequency phase shifter that can be fabricated using techniques such as microelectromechanical process. Another object of the present invention is to provide a multi-frequency phase shifter that can be completed using a microelectromechanical process and compatible with a 1C process. Ίfa: One purpose is to provide - high controllability, high phase variation. The phase shifter for frequency can be widely used in communication to make it more advanced: Review 9 & the members of the committee can explain, understand, understand, and understand the purpose, features, and effects of the present invention.

Figure No. Chart No. Name 10 Contact Variable Capacitor 11 Contact Variable Inductor

1292965

V. INSTRUCTIONS (7) 12 Control voltage source 13 Probe contact pad No. Name No. Name 110 Cantilever support structure 119 Meta 1 3 111 Control fixed electrode 120 Via3 112 Capacitor fixed electrode 121 Meta 1 4 113 Fixed 埠122 Via4 114 contact 123 Meta 1 5 115 Meta 11 124 Ultra-thin oxide layer 116 Vial 125 Cerium oxide 117 Meta 1 2 126 Ρ ο 1 y polycrystalline stone eve 118 Via2 127 Passivation Protection figure name Figure name 210 Cantilever support Structure 220Via3 211 Control fixed electrode 220Metal4 212 Inductive structure 222Via4 213 Fixed 埠223Metal 5 214 contact 224 Ceria 215 Meta 11 225Poly Polycrystalline 216 Vial 226Passivation Protective layer 217 Metal 2 2 2 7矽 Substrate 218 Via2 228 Electroplating 1292965 V. Invention Description (8) 219 Meta13 230 Inductor wire No. Name 310 Cantilever Support Structure 311 Control Fixed Electrode 312 Capacitor Fixed Electrode 313 Inductive Structure 314 Fixed 埠315 Separate Oxide 316 Sacrificial Layer 317 Ultrathin Ceria 318 Substrate One change, if using a 7 Type low-pass node and the contact can be adjusted by technology. The shortcoming of the general phase is the impurity, so the passive spiral shows that the three-stage contactable variable structure of the present invention is a variable capacitance of 10 using two sets of variable capacitors 10 and the majority of the mover is the main It will consume a large limit on the single-stage phase shifter with an area of 2 2 9 in the inductance area, with 1 2 0. The phase changes of up to 3 60 °. The main architectural sense 11 and the voltage source 12 of the two contact variable capacitors 10 control the contact variable inductor 11', and the multi-frequency phase shifter of the design is the phase of the variable inductor 11 to multi-frequency. Variable inductance or passive spiral inductors, front DC power and increased application of circuit and control for complex wireless communication; the latter is because of the overall area increase. Therefore, the invention 1292965 is convenient for Μ @ working in the non-contact variable inductance 11 inductance ❸ change makes the phase shifter @frequency and has a large phase change, the day tl · square + t4 female 螺旋 spiral inductor 4 account The face K匕 and this method also effectively utilize U, but the performance of the present invention is still violated: this extra-group control voltage source is still superior to the currently known manufacturing method. The early stage of the invention; the type of phase shifting potted state, its knowledge and phase calculation method, such as

The 7F is a 7Γ-type low-pass structure ABCD matrix AB ^ JXl c D -βφ-ΥΜ \ - YcX£ where γ _ 1 _ 1 yc wcz0 and y \ wL £=r = T 11 Δο The relevant parameters are defined as follows: : Inductance value C : Capacitance value Xl : Reactance value of the inductor xc : Reactance value of the capacitor \ ·· Inductance susceptance value Yc : Capacitance susceptance value Page 15 1292965

The scattering matrix is calculated as _ 2 2 , and this S21 can estimate the relationship between the capacitance change and the inductance change for the insertion loss and the phase lag behind the frequency change. That is, the phase backward angle can be calculated from the following equation: the furnace phase is the furnace 21 = tan-1 ~ l ~ L 20 - W) Using the above calculation method, the result shown in Fig. 2 can be obtained, which is a single-stage π-type phase. The analog comparison diagram of the shifter in five frequency bands is (a) 0.9 GHz, (b) 1.8 GHz, (C) 2.4 GHz, (d) 5 J GHz, (e) 5 · 7 GHz. The variable inductance and variable capacitance values of this simulation are based on the contact variable inductor 11 and the contact variable capacitor 1 used in the present invention. The best design can be obtained by simulation results, as shown in the table in Figure 3. This single-stage 7-inch phase shifter can change the phase by more than 120 ° in five frequency bands with an insertion loss of less than 〇·5 dB. The multi-frequency phase shifter of the present invention is composed of a contact type variable capacitor 10 and a high-variation rate contact type variable inductor 11, which will be described in detail below:

1292965

V. Description of the invention (Π) 1. Contact variable capacitor

As shown in the fourth example of the miniature variable capacitor equivalent model, the capacitance value is changed by using the characteristic parameter of the capacitor C, changing the pitch d of the capacitor, the area A of the mutual coupling of the capacitors and the dielectric constant ε thereof, and the variable capacitance. In general, the area-modulated capacitors (Area-tuning capacitors), the pitch-modulated capacitors, and the (Gap-tuning capacitors) are used. The invention can be used in both the spacing and the area. Change the way to achieve the function that the capacitance can be modulated. When a voltage is applied to the movable and solid two parallel electrodes for control, the control movable electrode i 丨〇 is displaced by the electrostatic force, and the conventional variable capacitor can be driven by the electrostatic force. The actuating stroke is only about 1/3 of the original height, so that the capacitance value of the capacitor is changed, and the change cannot be greatly improved. Therefore, the variable capacitor is generated by the bending deformation of the cantilever beam and the gradual deformation of the contact limiting boundary. The change in the core value is therefore called a contact type high rate of change variable capacitor. This electricity = has applied for the Republic of China patent, application number 〇9211 9122 ^ Valley as shown in Figure 5, the contact type 鬲 change rate variable capacitance contains at least - 5 sensitive capacitance 'one of the electrodes is made of a thin sheet containing conductive properties The cantilever structure 110 'the other electrode' consisting of the benefits is formed in a fixed*

^, the film will be deformed by the static voltage between the two electrodes, so its capacitance will change. The variable capacitor is fabricated by MEMS technology, such as (4), and MEMS is used as ί ΠΠΓ ΠΠΓ ΠΠΓ ΠΠΓ ΠΠΓ 。 。 。 。 The upper layer is a movable suspension structure knife. The cantilever type branch structure 110 is a movable electrode for control and a capacitor.

1292965

The lower electrode structure of the two electrode plates is a control capacitor fixed electrode 112. The dielectric layer uses two to make the volume change rate two times higher. The fixed structure has a fixed 埠 11 3 in addition to the fixed electrode for the control electrode and the ultra-thin oxide layer 124. The cantilevered truss structure can be designed in different forms of length and width ratios and structural shapes to achieve high g, low voltage and reduced overall area. Figure 6 is a schematic diagram showing the relationship between the different cantilevered support structures and the operating voltage and the corresponding c_v diagrams using the standard CM0S process as the design specification. As shown in Figure 7, the contact type high rate of change variable capacitance is curved into four areas: (1) Normal area "Normal Region" · This area has a small voltage and therefore the film deformation is small compared to the film thickness and capacitance plate The spacing, referred to as the normal area, is due to the area where the conventional microelectromechanical variable capacitor operates. (2) Conversion area "Ding 1^1!" 1^〇111^21〇11": In this area, one end of the cantilever film starts to contact the lower electrode of the capacitor, and the voltage at this time is called [contact point voltage]. This area is the transition of the capacitor from the normal mode to the contact mode. The design should try to make this area have a second continuity. (3) Contact area "Touching Region": This is the operating region where the contact variable capacitor has a large rate of change because it has a high gain and a large variation range. This is the change in capacitance of the film after the contact point. It does not depend on the distance between the two electrodes of the capacitor, but on the change in the contact area gradually corresponding to the action of the electrostatic electricity. The design should be such that the area is linear or three consecutive. ' 1292965 V. Description of invention (13) (. Saturated area factory with ^^^(10)" "(10) one: limited by the size of the overlapping area of the capacitor, the capacitance will still reach saturation even if the static voltage continues to increase, even because of the movable The warpage of the electrode, the contact area is reduced, the capacitance value is decreased, and the design and operation should be as large as possible. The contact type variable inductor with high change rate in this area is shown in Fig. 8. The variable power used in the present invention is as shown in FIG. The sensible equivalent model mainly uses a cantilevered baffle structure 21 〇 as a deformed structure, T is erected under the inductor 212, and is driven by an electrostatic force. The structure is between the cantilever beam 21〇 and the control lower electrode 211. By using the unique progressive change of the cantilever beam 21〇, the cantilever beam 21〇 gradually increases with the voltage = the contact wire of the contact inductor 212, so that the inductance is sequentially short-circuited so that the length of the inductor wire is somewhat Change, so the achievable change, so called the contact type high rate of change ^ state as shown in Figure 9. Change the sheep to change the inductance 'the shape of the variable inductance of the MEMS to make high variations can be standard Process, such as 1P5M To make the high rate of change variable 2 is also shown in Figure 10. The upper layer is the movable suspension structure part, and the support structure 210 is the upper electrode of the control plate, and the lower electrode 211 and the inductor of the lower plate Structure 212. Fixed γ in addition to the control ^;; lower electrode 211, inductive structure 212, and other fixed 埠213 suspension #-type support structure 2 1 0 can be designed into different forms of examples and structural shapes to obtain high Q, Low operating voltage, linear ratio page 19

1292965 V. Description of invention (14) The area of the whole and the reduction of the whole. Because in the layout, a part of the area needs to be exposed outside and etched holes), and it is only $ for the circle + 丨, etc., deep channel Qiu Ba, I ... cover, so in the post-process l盅i: in protection Apply a layer of photoresist on the layer to define the area to be electroplated. ί2ίί出 inductance' We can control the thickness of the coating or choose electricity to get the inductance we need, and the protective layer we knock it off. As shown in Figure 12. In addition, the variable inductor is mainly intended to have a Q value that is not too low when the inductance value changes. Therefore, the design terminates one of the signals to the cantilever structure 210+, so that when the cantilever structure 21 is gradually connected with the static voltage, At the same time of contact with the inductor, the internal resistance of the overall structure will also become smaller as the signal path becomes shorter, and the inductance value becomes smaller as the 1:1 fruit is gradually reduced. However, since the internal resistance value also decreases, the Q value Still have a certain level. ^Variable inductance after the process can be used to etch the hole 々丨L into the 绍石夕铜 alloy [etching solution is l6H3p〇4+1HN〇3+icH3c〇〇H + 2H20], titanium [The etching solution is H2:Hf:H2〇2 = 2〇:i:i], tungsten (etching solution is H202), etc. The protection is removed from the following metal layer sacrificial layer, and the bottom part of the lower voltage plate can be hollowed out. The use of sulfuric acid plus hydrogen peroxide, 1:1 mixed etching, can complete the production of variable inductance, as shown in Figure 13. [Embodiment] [Embodiment 1 of the present invention] CMOS 0.25um 1P5M standard process We first need to understand the multi-frequency phase shifter and (10) (10) standard process to judge

1292965

V. INSTRUCTIONS (15) Can it be produced in a standard process, then design simulation according to the required design specifications, and then perform wafer layout verification through Cadence, go offline to wafer foundry, such as TSMC, and finally complete the wafer. ^ Micro-electromechanical post-process manufacturing and measurement packaging, the entire process shown in Figure 14. When the required design specifications are obtained, it is convenient to design a multi-frequency phase shifter using TSMC's CM〇s 0· 25um 1P5M standard process. Figure 15 shows the three-level 360 of the CMOS standard process. The phase shifter layout diagram, the & square spiral inductor used for the inductor, has a line width of 10 μm and a pitch of 1 〇um, and is fabricated by electroplating. The cantilever support structure 10 uses M e t a 1 4, and the cantilever support structure can be designed into different shape structures according to requirements; the lower electrode of the control plate is used.

Metal2; Metal5, Metal4, Metal3 and Via4, Via3 are fixed 埠1 3 parts of variable inductance. In addition, the variable-capacity cantilever support structure 10 uses Metal5; the dielectric layer uses MIM's ruthenium oxide layer; the voltage plate lower electrode 11 uses Metal3; the capacitor lower electrode 12 uses Metal4; and the Metal5, Metal4, Metal3 and Via4, Via3 It is a fixed capacitor 埠13 part. The thickness of each layer is shown in the following table:

Metal 50. 99 um aluminum beryllium copper alloy Metal 40. 57 um aluminum beryllium copper alloy Metal 30. 57 um aluminum beryllium copper alloy Via4 1 um crane Via3 1 um crane

Perform the required MEMS post-process for the die returned from the foundry, first

Page 21 1292965 V. Inventive Note (16), an isotropic chemical wet etching of aluminum beryllium copper alloy [etching solution is 16H3P04 + 1HN03 + 1CH3C00H + 2H20], titanium [etching solution is H20: HF: H202 = 20: 1 : 1], tungsten (etching solution is h2〇2) and other metal layer sacrificial layer removed, and then

Dry etching using anisotropic RIE [gas is CF4, pressure 6. 5Pa, RF

Power : 1 00W] The varistor layer on the metal sacrificial layer is removed to complete the fabrication of the variable inductor. In addition, in the CMOS process, the substrate with high doping and low resistivity is used. Therefore, the loss of the substrate is higher than that of the gallium arsenide process. In order to reduce the Q value caused by the loss of the substrate, the underside of the inductor can be hollowed out to reduce the metal and The capacitance between the substrates allows the metal lines to be protected from more noise coupled via the substrate. Although the above CMOS process is an example, it is not limited to this. Any semiconductor integrated circuit process with multiple layers of intermediate metal (interc〇nnecti〇n) can be applied, such as GaAs, SiGe, Bipolar, etc. Etc., to make the multi-frequency phase shifter of the present invention. [Embodiment 2 of the present invention] Design and manufacture without using a CMOS standard process The present invention is very suitable for fabrication because of its simple structure, as shown in Fig. 16. Using the imitation electromechanical technology to self-deposit a layer of cerium oxide 3丨5 on the wafer, and then sputtering-sounding to define a part of the inductor structure 313, 胄 固 solid; = electricity _, and fixed 埠 314, metal material = Knot =

1292965 V. INSTRUCTION DESCRIPTION (17) 2. The second step is followed by sputtering of a connection layer of the inductor, a capacitor fixed electrode 3 12 and a fixed crucible 113, the height of which depends on the requirements. 3. The third step begins to define the layout of the inductor 313 and the capacitor fixed electrode 312. The material is designed to be 'subsequently deposited with the sacrificial layer 3 1 6 . The material is mainly easy to touch and defines the area of the fixed 埠 314. It depends on the cantilevered support structure 3 10 and the inductance 3 1 3 pitch. 4 Finally, a metal can be deposited as a cantilever beam on the sacrificial layer 3 16 , and the structure release can be completed by etching away the sacrificial layer 3 16 . The above process steps are not necessarily the same, and a similar structure can be produced by using a combination of different MEMS process steps and modes. After the process design part is completed, the variable inductance and variable capacitance are simulated by using the module of the Covent〇rWare simulation software. First, the variable inductance is meshed by the finite element method, and then the variable inductance is applied. The inductance value, capacitance value, displacement, stress, and voltage are analyzed. The simulation of the software is used to establish the variable inductance and variable capacitance. The number is analyzed to understand its characteristics, and finally the wafer is processed. Measure whether the results of J Xun are consistent with the results actually completed. Although the above general MEMS process using a non-integrated circuit process is an example, it is not limited to this. Any MEMS process with multiple layers of intermediate metal or polysilicon is used. Can be used highly, such as MUMPS, SMart, MPMC, etc., can also achieve too ηα I multi-frequency phase shifter. The invention

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 12 is a schematic diagram of an inductor plating process of the present invention. FIG. 13 is a schematic diagram of an inductor post-process etching of the present invention. FIG. 14 is a flow chart of a multi-frequency phase shifter design and manufacturing method of the present invention. The three-stage multi-frequency phase shifter layout diagram of the present invention is a schematic diagram of the multi-frequency phase shifter micro-product process of the present invention.

Claims (1)

1292965 % ¥曰修(more)正杂R VI. Patent application scope [Scope of application] 1. A single-frequency or multi-frequency phase shifter, which is a low-pass filter of one-stage to multi-stage T-type or 7-type type; More than one voltage source for control; the so-called low-pass filter is composed of one or more high-varying contact variable f-capacities and one or more high-variation-rate contact-type variable inductors; According to the operating frequency, the so-called sensible value of the variable inductor is set, and then the capacitance value of the so-called variable capacitor is changed to achieve the set phase offset. With the multi-stage low-pass filter, only two The control voltage sets the variable inductance and the variable capacitance respectively to achieve a wide range of phase shifts that operate at single or multiple frequencies. 2. The phase shifter according to claim 1, wherein the so-called contact type variable capacitor comprises a movable parallel and parallel fixed electrode plate; and a variable gap capacitor is movable and fixed. Parallel electrode plate; a fixed electrode of a so-called capacitor is coated with a dielectric layer; The distance between the two electrodes of the so-called capacitor is smaller than the distance between the two electrodes for control; the so-called movable electrode for control can be connected to the movable electrode plate of the so-called capacitor, and one end is a fixed crucible, and the other end is a fixed crucible. One end is a free end; a so-called movable arm for control on the cantilever is fixed by control Page 26 1292965 % Year 4 Repair (more) Replacement Page 6, Patent Application Range Capacitive movable electrode can continue to deform even after touching the so-called capacitor fixed electrode until the so-called capacitive movable electrode plate is completely fixed with capacitance The electrode plate stops its capacitance change after contact. 3. The phase shifter according to claim 2, wherein the so-called fixed electrode of the capacitor is covered with a dielectric layer, which may be several micrometers to several tens of nanometers, and the thinner the viscosity change can be increased. Rate, and the maximum capacitance value. 4. The phase shifter according to claim 2, wherein the distance between the two electrodes of the so-called capacitor is smaller than the distance between the two electrodes for control, so that the control voltage changes when the control capacitance changes. The stability is maintained, and at the same time, the control voltage can be lowered. The preferred range is the distance between the two electrodes of the so-called capacitance between the so-called two electrodes for control. 5. The phase shifter according to claim 2, wherein the so-called control movable and fixed parallel electrodes are positionally replaceable with the movable and fixed parallel electrodes of the capacitor for better control capability. When the free end of the cantilever beam is used as the control electrode, the characteristic that the elastic modulus K value of the cantilever beam decreases with the fixed end distance can effectively suppress the influence of the electrostatic force generated by the alternating current signal on the capacitor plate; When it rises, the capacitor plate will make partial contact first, but the free end will still hold the deformation, and will stop changing after reaching the designed voltage value. Page 27 6. The j-eye shifter according to claim 2, wherein the movable electrode for controlling the cantilever portion and the y-moving electrode of the capacitor are designed to have a partial section to be reduced in width, increased in length, or in the cantilever beam. Punching the hole, causing a decrease in the K value of the elastic coefficient, makes the cantilever beam achieve a low operating voltage. 7. The phase shifter of claim 1, wherein the so-called contact type variable inductor comprises an arbitrary form of inductance, at least one microactuator, mainly by moving and fixing two parallel electrode plates and The control circuit for driving the movable electrode plate; the so-called micro-actuator can be a cantilever support structure, which is arranged above the wire connecting the inductor, wherein one end is a fixed turn and the other end is a free end, the cantilever The structure is used on the one hand as a contact piece for the inductor coil, and on the other hand as a movable electrode for control; the so-called microactuator movable electrode is subjected to the static voltage of the fixed electrode of the microactuator, and the cantilever is gradually Deformation, the free end of the cantilever can continue to deform even after contacting the so-called wire, until the so-called movable electrode plate completely contacts the wire and then stops the contact change of the earth. In this way, the movable electrode contacts the wire to cause the inductance coil to be short-circuited. Reduce the number of effective turns to achieve the purpose of changing the effective inductance value. 1292965 牟3·Ι6-day repair (more) replacement page VI. Patent application range The contact of the moving electrode to the wire causes the inductor coil to be short-circuited, thus reducing the number of effective turns and achieving the purpose of changing the effective inductance value. 8. The phase shifter of claim 7, wherein the movable electrode of the microactuator as the cantilever portion can be reduced in width, increased in length, or perforated in the cantilever beam to cause elasticity. The reduction in the coefficient Κ value causes the cantilever beam to achieve a low operating voltage. The phase shifter according to claim 1, wherein the contact type variable inductor can be a single-frequency phase shifter according to a fixed inductance direct value inductance. 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