TW200525810A - Multi-band tunable phase shifter composed of micromachined varactors and tunable inductors - Google Patents

Abstract

This invention discloses a phase shifter which can operate in multiple bands. The said phase shifter consists of at least one stage of T-type or π-type lowpass filter. The said filter is composed of two highly tunable micromachined contact-type capacitors and one tunable micromachined contact-type inductor. According to the required operating frequency, the said tunable inductor is tuned into a corresponding value, and then the two said tunable capacitors are varied to obtain the required phase shift range with minimum insertion loss. Making use of multi-stages of said filters, the invention can achieve wide-range phase shift in multiple bands with only two control voltages for tuning the said inductor and the said capacitors respectively.

Description

200525810 V. Description of the invention (1) [Designated representative map] (:) The designated representative map in this case is: (a). (1) The representative symbols of the representative diagram are simply explained. Drawing number 10 11 12 13 Name Contact type variable capacitor contact type variable inductance control voltage source pin contact pad [Technical field to which the invention belongs] The present invention is a Applied to multi-frequency micro = high change rate and high Q value of variable capacitance and variable electro-shifting. "Especially, head: device 'has very low insertion loss and high phase shift. This multi-frequency phase shifter can be integrated into a single integrated circuit of communication, and can be widely used in smart antennas or other communication fields. [Previous technology] In recent years, due to the many communication frequency bands and networks Openness, coupled with the development of semi-integrated CMOS processes, has made wireless communication systems lighter, thinner, smaller, and multi-band, multi-mode, Rongda 1 production, and the production cost can Development in a decreasing direction. In particular, the development of personal wireless communication systems has increased. For example, mobile phone applications G s 9000 η z

200525810 V. Description of Invention (2)

With an operating frequency of 1 800MHz, Bluetooth (Bluetooth), IEEE 802 · 1 lb, IEEE802 · 15 · 3, etc. operate in the 2.4 GHz band, and Wireless Local Area Network (WLNA) IEEE802.1 1 a operates in In the 52GHz frequency band, to push the communication quality to the peak in these frequency bands, the use of smart antennas is one of the feasible solutions, and the development of phase shifters is one of the key components of smart antennas.

The following are a few related phase shifter patents, briefly describing their methods and features: (US6665353, NISBET JOHN J (CA), SIRENZA MICRODEVICES INC (US) Quadrant switching method for phase shifter W003052861 (Al) 2003-12 -16) 5 The phase change method described in this patent allows the user to select a fixed phase first, where the so-called fixed phase is 0. , ± 90. ± 18. Then use this fixed phase as the starting point and have 18 °. Phase shifter to achieve the required phase. The phase shifter architecture contains 90. Phase difference network (Quadrature network), radio frequency hybrid circuit (RF commbini called = and, bit circuit-based active phase shifter, where the input signal into the phase difference network generates two signals, and here The time-added signal generates a weighting signal (weighting Slgna " :: batch connection, transmission, 'Hehe Circuit' combines these three signals into an output signal, and voltage = 1) becomes a mechanism for controlling the variable phase shifter. Its characteristics are: low cost, user phase selectivity, low noise, small area

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2. (EP1368893, SAYYAH KEYVAN (US), CONTINUOUSLY TUNABLE PHASE SHIFTER, 2003-12-10 HRL LAB LLC). The patent is a phase shifter with continuous phase change, which is divided into two parts. The first part is a coarse phase shifter made with a MEMS switch and a delay line, designed to make a large phase change. The second part 2 uses a resistance of (is a light conductor, which depends on the light energy. The RLC network composed of capacitors and inductors (spiral inductors) is used to fine-tune the phase. Its role is to provide an additional fine phase = phase with a phase range of 0. ~ 4 5. If supplemented with the coarse phase shifter of the first part, a large change rate and continuous phase change can be performed. The advantages of this type of phase shifter are: large operating bandwidth, linear phase change with frequency, low loss, high rate of change, and can be applied to high and low frequency bands. The main disadvantage is the large area, because it has to reach 360. The phase change requires ten switches, two capacitors, and phase delay lines of different lengths, etc. Therefore, its area is a bit too large for wireless communication applications. (US2003 / 0227353, Nader Fayyaz and Ottawa (CA), Variable phase shifter and a system using variable phase shifter, 2003-12-11) The variable phase shifter described in this patent includes a fixed phase shifter, an active element (Amplifier), mixer, and a bias controller, which can be integrated into the system-on-a-chip, so it can be applied to the smart antenna front-end system

200525810 V. Description of the invention (4) — or integrated into the RF circuit. The phase change is mainly by giving a bias signal to the bias controller, and the phase control signal is generated to be used to control = gain and phase of the active component signal. Finally, the output signals of the active components are combined through a mixer to become The output signal is therefore an active gas shifter. There are two main ways of the conventional phase shifter. The first is to make an active phase shifter using the architecture of an active circuit. Reference can be made to journal articles (A. Wittneben, " Smart antennas for lwwcst wireless communications, " Frequenz, vo1. 54, no. 2 pp 58-64, Jan · Feb · 2000 ·) 'and the above Three pre-patent cases. Generally speaking, most of the active phase shifters have the following problems: large circuit loss, large loss changes, large circuit area, large power consumption, complex control, need multiple sets of voltage control, and have bandwidth limitations. The first is to make phase shifters using passive element technology. Refer to journal papers (Ellinger, F .; Jackel, H .; Bach told, W ·; nVaractor-loaded transmission-line phase shifter at C-band using lumped elements 丨 ',

Microwave Theory and Techniques, IEEE Transactions on, Volume: 51 Issue: 4, April 2003 Page (s): 1135 1140). Mainly use lumped elements to build the phase shifter, use the change rate of GaAs variable capacitance to make the phase shifter achieve a small angle phase change, and then achieve the

Page 10 200525810 V. Description of the invention (5) 360 ° phase change. The disadvantage is that the loss of the single-stage phase shifter is large and the phase change is too small due to the low rate of capacitance change. If a larger phase change is required, multiple stages are connected in series, so the loss is greater. Others also use a delay line of different length (del ay 1 ine) or a combination of a fixed inductor capacitor group and a switch to make a phase shifter ', but the area is very large and the loss is not small. It can be known from the above description that the conventional technology still has many difficulties to achieve high phase change, small area, low loss, and practical products at the same time, not to mention the multi-frequency and multi-mode function. The object of the present invention is to meet the above requirements' and to operate in multiple frequencies and modes, and still have superior performance. The invention can provide a new form of phase shifter, which is combined with standard CMOS process technology and several post-processes of MEMS, so that the phase shifter not only has a continuous phase change of 360 °, but also has low loss. Process compatibility is not limited to CMOS process or other standard semiconductor integrated circuit process. It can also be achieved using other processes such as MUMPS, SMart, MPMC, etc. '[Objective of the Invention] The main object of the present invention is to provide a phase shifter with a small area, low loss, wide frequency, and high phase change.

Another object of the present invention is to provide a multi-frequency phase shifter that can be completed by using micro-electromechanical process technology such as surface processing and electroforming. Another object of the present invention is to provide a multi-frequency phase shifter which can be completed by using a micro-electromechanical process and compatible with an IC process. Another object of the present invention is to provide a high controllability and a high phase change.

200525810 V. Description of the invention (6) The phase shifter with wide operating frequency can be widely used in the communication field. In order for your reviewers to have a better understanding and understanding of the purpose, features and effects of the present invention, we will explain it in detail with the following diagrams: Figure number comparison table Figure number name 10 Contact variable capacitor 11 Contact variable Inductor 12 Control voltage source 13 Probe contact pad Figure number Name number 110 Cantilever support structure 119 Meta 1 3 111 Fixed electrode for control 120 Via3 112 Fixed electrode for capacitor 121 Meta 1 4 113 Fixed port 122 Via4 114 contact 123 Me ta 1 5 115 Me ta 1 1 124 Ultra-thin oxide layer 116 Vial 125 Silicon dioxide 117 Me ta 1 2 126 Poly polycrystalline silicon 118 Via2 127 Passivation protective layer

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200525810 V. Description of the invention (7) Drawing number name Drawing number name 210 Cantilever support structure 220Via3 211 Control fixed electrode 220Metal4 212 Inductive structure 222Via4 213 Fixed port 223Metal5 214 contact 2 2 4 Silicon dioxide 215 Me ta 11 2 2 5 Ρ ο 1 y polycrystalline stone 216 Vial 226 Passivation protective layer 217 Me ta 1 2 2 2 7 broken substrate 218 Via2 2 2 8 electroplating 219 Me ta 1 3 229 photoresistor 230 inductor wire drawing name name 310 cantilever support structure 311 control With fixed electrode 312 capacitor fixed electrode 313 inductance structure 314 fixed port 315 silicon dioxide 316 sacrificial layer 317 ultra-thin silicon dioxide 318 substrate

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200525810 V. Description of invention (9)

A The relevant parameters are defined as follows: LC Xl Xc Yl Yc Inductance value Capacitance value Inductance value Capacitance Reactance value Inductance value Inductance value Capacitance value The scattering matrix is calculated as follows 4ι = · 2 A + B + C + D '2 {\ -YcXz) + j {X £ + 2Yc-Y ^ X £) From this S2 1 we can estimate the relationship between capacitance change and inductance change, insertion loss and phase lag under frequency change. That is, the phase lag angle can be calculated by the following formula.The transmission phase is X £ -2Yc + Y ^ X £ 2 (1-¾)

Page 15 200525810 V. Description of the invention (10) The contact variable inductor and the contact variable capacitor 10 used in the present invention are used as the basis. The best design can be obtained from the simulation results, as shown in the table in Figure 3. This single-stage 7Γ-type phase shifter can change the phase by more than 120 in five frequency bands. And the insertion loss is below 0.5 dB. The multi-frequency phase shifter of the present invention is composed of a contact variable capacitor and a high-change-rate contact variable inductor, which are described in detail below. 1. A contact variable capacitor such as The equivalent model of the miniature variable capacitor shown in Figure 4. The change of the capacitance value is to use the characteristic parameter of the capacitor C to change the distance d of the capacitor, the area A between the capacitors and the dielectric coefficient ε. The area is generally divided into two ways: area-tuning capacitors and gap-tuning capacitors. The present invention can be used. The capacitor structure adopts a change method that has both space and area. Reach the function of electric order value can be adjusted. If a voltage is applied to the control movable and fixed = parallel electrodes, the control movable electrode 110 will be affected by the electrostatic force = displacement, because the traditional variable capacitor can be controlled by electrostatic force to only about 1/3 The original height of the capacitor makes the capacitance of the capacitor i i ϋ 善 Γ good. Therefore, this variable capacitor uses the cantilever beam's characteristic of the 2nd-curved deformation and the gradually deformed shape after contacting the limiting boundary to produce the second Z-mount change, so It is called a contact type high change person = a patent of the Republic of China has been applied for, application number 0921 1 9 1 22. This capacitor is shown in Figure 5. The contact type high change rate variable capacitor contains at least one 200525810. 5. Description of the invention (11) Voltage-sensitive capacitors, a cantilever structure 11 () composed of a thin film, 疋 is composed of a thin plate and a substrate with conductive properties, and the thin 臈 will be caused by the two-electrodes. 『12: The capacitance will change when it is fixed . The network is deformed by the good voltage effect. Because the variable capacitor is a microcomputer, it can be standard CMOS process, such as: = for the surface change rate variable capacitor, but also the change rate variable capacitor, such as Brother Micro-Electro-Mechanical post-process to make high scores, of which The upper layer of the cantilever support is composed of the movable electrode plate of the movable suspension structure. ^ 椹 卩 is the movable electrode for control and the fixed electrode for capacitance and capacitance! i 2. The dielectric m is ^ control / Λ fixed electrode 111 and the capacitance change rate rises in numbers. Using the thin oxide layer 124 can make 111, capacitor fixed mines 9 fixed structures in addition to the control of the fixed electrode ratio and structure shape make only different length, width and thickness. Figure 6 shows different cantilever support power and pressure relationships and their corresponding c_v diagrams based on the design of the Q-value, low voltage, and reduced overall surface structure and operating power ^ # π process as the design specification. σ 13 shows that the contact-type high-change-rate variable capacitor is curved into four regions:

(1) Normal region: “M thin film turns, 丨 〇 = eglon”: The voltage in this region is small, so it is called ΐί. Because of the distance between the film thickness and the capacitor plates, the electric * π * region is because this region is generally traditional. The area where MEMS can work. Erding Bian (2) The secret of the transition area ". Split Region" ·· In this area, one end of and begins to contact the lower electrode of the capacitor.

Page 17 V. Description of the invention (12) is [Transfer to contact (3) The range of capacitance change in the contact area does not depend on the electric voltage to make this (4) the area of the saturation area as saturated as possible, and the capacitance value is reduced by 0 degrees. 200525810 contact voltage], this F a p p area is a capacitor that passes through the normal mode, so the design should make this area as continuous as possible.

"Touching Reg10n": This is the contact area with a large variable rate of operation. 'Because it has high gain and large, this is the capacitance of the film after the contact point changes the distance between the two electrodes of the capacitor, and It is dependent on the static use to gradually change the contact area correspondingly. The design should be more linear or continuous three times.

Saturation Region "........ Limited by the overlap of capacitors. Even if the static electricity continues to increase, the valley will still be reached. Due to the warping of the movable electrode and the reduction of the contact area, the electricity should be as large as possible in this area. Yu2, the contact variable inductor with high change rate is shown in Figure VIII. The equivalent model of the variable inductor used in the present invention is mainly 21 η plus # arm support structure 21〇 as a deformation structure, the cantilever support structure Lu Yumu's Ding Fang's inductor 212 uses electrostatic force as the driving source. The applied electricity is between the beam 21G and the control lower electrode 211. The cantilever beam 210 is used to make a wide and progressive change, which will make the cantilever beam 2 丨 〇 With the gradual increase of the voltage 2, touch the other wires of the inductor 2 1 2 to make the inductance of the coil: ί makes the length of the inductor wire change, so it can reach the value of the inductance: Min 'therefore called The contact type high change rate variable electricity ⑤, its change shape is shown in Figure 9.

Page 18 200525810 V. Description of the invention (13) This variable inductor is made by micro-electromechanical technology. Standard CMOS process, such as lp5M, can be used for variable rate inductor, as shown in Figure 10. The upper layer is a movable suspension element: a variable rate variable inductor, and the supporting structure 210 is the electric pole above the control electrode 4 / knife, in which the electrode 2 1 1 below the cantilever support electrode and the inductor Structure 2 丨 2 The lower structure is the lower electrode of the control plate 211 and the inductive structure 212: In addition to the control arm support structure 2 1 0, the structure can be designed as a different fixed port 2 1 3. Hanging example and structure shape to obtain high Q value, low action X = length, width, thickness ratio, and reduce the overall area. I. The linear contact changes because part of the area and the contact engraving holes are needed in the layout), and the protective layer is not covered. Figure 10 = Road in the outside (the part of the wire channel, we first apply a layer of light on the layer to In the second field of the post-process, the inductor is plated. We can control the thickness of the plated material to obtain the inductance characteristics we need, and ^ 疋 = select the electricity to destroy it. Figure 12 shows. I will not change this: the main reason for changing the inductance is that when the inductance value changes, the value of q is still two times. This design terminates one of the signals to the cantilever structure: when the whole two is the structure 21 ° with static voltage The internal resistance value of the 7 H structure that gradually comes into contact with the inductor will also decrease as the signal path becomes shorter. Although the inductance value gradually decreases, the internal resistance value is also low, so Q The value still has a certain level. Ancient =, after the inductor process, isotropic chemical wet etching can be used to flow in through the etched holes into the aluminum silicon copper alloy [etching solution is 16H3p〇4hhn〇3 + ich3c〇h + 2H20], titanium [Etching solution is H2〇: hf: H2〇2 = 2〇: i: i]

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Liquid, H202] and other protections are removed from the sacrificial layer of the metal layer below. The hollowed out part of the bottom of the board can use sulfuric acid plus hydrogen peroxide, and the 1: 1 mixed etching can be completed to make the variable inductor, as shown in Figure 12 Show. [Embodiment 1 of the present invention] CMOS 0.25um 1P5M standard process

We 1 * must first understand the multi-frequency phase shifter and "⑽ standard process to determine whether the ticket can be produced" and then perform design simulation according to the required design specifications ", then verify the chip layout through Cadence, and go offline to the wafer generation A factory such as TSMC manufactures wafers, and finally completes the wafers for micro-electro-mechanical post-process manufacturing and measurement packaging. The entire process is shown in Figure 14. When the required design specifications are obtained, it is convenient to use TSMC ’s “⑽ 25um 1P5M Standard process to design multi-frequency phase shifter. Figure 15 shows the second stage 360 of the standard CMOS process. For the phase shifter layout, the inductor uses a square spiral inductor ’with a line width of 10 μm and a pitch of 10 μm. It is made by key bonding. Among them, the cantilever support structure 10 uses Me t a 1 4 and the cantilever support structure can be designed into different shapes according to requirements; the lower electrode of the control electrode 11 is used

Metal2; In addition Metal5, Metal4, Metal3 and Via4, Via3 are the fixed port 13 of the variable inductance. In addition, the cantilever support structure 10 of the variable capacitor uses Metal5; the dielectric layer uses MIM silicon dioxide layer; the lower electrode of the voltage plate 11 uses Metal3; the lower electrode of the capacitor 12 uses MetaU; in addition Metal5, Metal4, Metal3 and Via4, Via3 It is a fixed port of variable capacitor.

Page 20 200525810 V. Description of the invention (15) The thickness of each layer is shown in the following table: Metal 50. 99 um Metal 40. 57 um Metal 30. 57 um Via4 1 um Via3 1 um Mingshixi Copper Alloy I Shixi Copper Alloy Tungsten Tungsten will carry out the required ㈣ of the bare crystals returned from the wafer foundry ... In the post-process, the aluminum-silicon-copper alloy [etching solution is 6Η3ρ〇4 + 1HN03 + 1CH3C00H + 2H20], Titanium [H2O: HF: H2〇2 =

20: 1: 1], tungsten [etching solution is H2O2] and other metal layer sacrificial layers are removed, and then anisotropic RIE dry etching [gas is CF4, pressure 6.5pa, RF Power: ioow] The silicon dioxide (Oxide) layer on the metal sacrificial layer is removed to complete the fabrication of the variable inductor. In addition, in the CMOS process, a substrate with high doping and low resistivity is used: the loss will be higher than that of the gallium process. In order to ㈣ ^ ^ φ ^ hollow out the inductor and reduce the metal and base to make the metal wire. Avoid receiving more via the substrate ^

Although M is limited by CMOS, any multilayer circuit with a single layer is not suitable for the fabrication of conductive circuit circuits, such as Bipolar, etc., for making this application, such as GaAs, SiGe, BiCMOS, so-called multi-frequency phase shifter.

Page 21 200525810 V. Description of the invention (16) [The second embodiment of the present invention is not designed and manufactured based on the CMOS standard process. Because of its simple structure, the present invention is very suitable for making it by itself using MEMS technology, as shown in Figure 10. Six as shown. 1. First deposit a layer of silicon dioxide 315 on the wafer, and then sputter a layer of metal to define part of the inductor structure 3 丨 3, capacitor fixed electrode 3 丨 2, control fixed electrode 311, and fixed cock 314, metal materials It depends on the required design. 2. The second step is to deposit the connection layer [via], capacitor fixed electrode 312 and fixed port 113 of the inductor by sputtering. The height depends on the requirements. φ 3 · The second step begins to define the layout of the inductor 313 and the capacitor fixed electrode 312. The material depends on the design. Subsequently, the sacrificial layer 3 丨 6 is deposited. The material is mainly easy to etch. The area of the fixed port 314 is defined. Cantilever support structure 3 10 and inductance 3 1 3 depend on the pitch. 4. Finally, metal is deposited on the sacrificial layer 3 1 6 as a cantilever beam of the structure. After the completion, the sacrificial layer 31 6 is etched to complete the structure release. The above process steps are not necessarily the same, and a combination of different micro-electro-mechanical process steps and methods can be used to produce a similar structure. After the process design part is completed, the modules in the C ο ν ent 〇r W are simulation software are used to simulate the variable inductor and variable capacitor. First, the variable inductor is meshed by the finite element method, and then Analyze and simulate the inductance, capacitance, displacement, stress, and voltage of the variable inductor and variable capacitor. Through the simulation of the software, establish various parameters of the variable inductor and variable capacitor to analyze and understand their characteristics. Finally, Measure the finished wafer

Page 22 200525810 V. Description of the invention (17) Verify whether the simulation results are consistent with the actual results. Although the above is a general micro-electro-mechanical process using a non-integrated circuit process as an example, it is not limited to this. Any micro-electro-mechanical process with multilayer interconnection metal or polycrystalline silicon can be applied. , Such as MUMPS, SMart, MPMC, etc., can also implement the multi-frequency phase shifter referred to in the present invention.

Page 23 200525810 Simple description of the drawings [Simplified illustration of the drawings Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 10 Six single-stage 7Γ-type phase shifter layout diagram Single-stage π-type phase shifter design specifications for single-stage π-type phase shifter in five frequency bands 等效 The miniature variable capacitor equivalent model of the present invention, the standard CMOS process of the invention is variable Sectional view of capacitor structure Schematic diagram of different types of cantilever support structures of the present invention. Distribution diagram of the capacitance change section of the present invention [the horizontal axis is voltage and the vertical axis is capacitance value] The equivalent model of the miniature variable inductor of the present invention Variable inductance deformation diagram Schematic diagram of cantilever support structure of the invention Standard CMOS process diagram of the invention Schematic diagram of inductor plating of the invention Schematic diagram of post-inductance process etching of the invention Multi-frequency phase shifter design and manufacturing method flowchart of the invention Layout diagram of a three-stage multi-frequency phase shifter

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Claims (1)

200525810 VI. Scope of patent application [Scope of patent application] 1 · A single-frequency or multi-frequency phase shifter 'includes a low-pass filter of T-type or 7Γ-type with one or more stages; one or more control voltages Source; a so-called low-pass filter is composed of one or more high-change-rate contact variable capacitors and one or more high-change-rate contact variable inductors; the so-called variable current is adjusted according to the operating frequency Change the capacitance value of the so-called variable capacitor so that it reaches the set phase offset. Using a series connection of a multi-stage low-pass filter, only two control voltages are needed to set the variable inductor and Variable capacitors can achieve a wide range of phase shifts working at single or multiple frequencies. 2. As the scope of the patent application, the variable capacitors include phase shifters. Among them, the so-called contact type can be a controllable and a variable-gap capacitor with two parallel electrode plates; the so-called fixed and movable capacitors. Fix two parallel electrode plates; ~ A layer of dielectric is coated on the two poles of the so-called capacitor; The distance between the two electrodes to be used is smaller than the so-called control ~ The so-called control movable 畲 can be connected to form a cantilever, the 极 pole and the so-called capacitor's movable electrode plate from the end; J is a fixed port, While the other end is self 200525810 VI. Patent application scope Electrostatic voltage effect of the cantilever gradually deforms, even if the capacitor movable electrode set at ^ can contact the so-called capacitor, it can continue to deform until the so-called capacitor can be contacted with the fixed electrode plate of the capacitor. After the stop " Board element 3. 4. 5. The contact variable capacitor described in Erlifan® 2, where the field and "Fenzhi fixed electrodes are covered with a layer of dielectric to tens of nanometers, life is short It can be done with thousands of micrometers and the largest capacitance; "The rate of change of the cross capacitance, such as the contact type lightning disaster described in the patent application scope 2, and the electric order 'where the so-called distance between electrodes, f ^ The distance is smaller than the so-called two-point control. For the control voltage to change when the control capacitance changes, the so-called two-control distance is about two to two. —Seven in the so-called capacitor ^ ^ ^ ^ ^ t ^ ti j "moving and fixing two parallel electrodes, the movable / fixed two parallel electrodes of the pot / can be placed and connected with the capacitance control ability; u To achieve a better cantilever drop @ You-end can be used when the control electrode is used; = value: 4 characteristic characteristic that the distance of the fixed end is reduced; as the shadow of the electrostatic force generated by the control and capacitor plates reverses gradually For the promotion, the capacitor plates will be connected in part first. 200525810 6. The scope of the patent application is deformed and touched after reaching the designed voltage value, but the free end will continue to stop and change. 6. The contact variable capacitor according to 1 / eight consumption circle 2, wherein the movable electrode used as the control electrode and the movable electrode of the capacitor can be set ^: the length ▲, width, height shape and thickness of rf to achieve The design purpose of the controllability of the low power 5; when the cantilever beam partial area 2, n, the width is reduced, the length is increased, or the cantilever beam is hit on the cantilever beam, the coefficient κ is reduced. The contact type variable capacitor described in the scope of patent No. 2 of Patent No. 2 has a manufacturing process of ίr ::: 于. ] Or other standard semiconductor integrated circuits i also:;: using other processes such as: _ps— The phase shifter variable inductance as described in the patent application scope 1 includes the so-called contact type which can be an arbitrary form of inductance; to) a political actuation, which is mainly composed of movable and fixed two-level and drive the movable electrode plate The control circuit is composed of: a micro-actuator of the electric actuator: its movable electrode can be a cantilever electric line above the V line, one end of which is solid; 200525810 VI. The scope of the patent application is a port, and the other end is a free end. This cantilever structure is used on the one hand as a contact piece for an inductive coil. On the other hand, it is also used as a movable electrode for control; a so-called micro The movable electrode of the actuator is gradually deformed by the static voltage of the fixed electrode of the micro-actuator. The free end of the cantilever can continue to deform even after contacting the so-called wire until the so-called movable electrode plate element is in contact with the wire. Stop the contact change, and use this method to make the movable electrode contact the wire and cause the inductor coil to short-circuit, so reducing its effective number of turns to achieve the purpose of changing the effective inductance value. 9 · As in the contact variable inductor described in the patent scope 8, the so-called arbitrary form of inductor can be a flat spiral inductor, or other forms such as a 3D spiral structure, etc. Width, line spacing, inner diameter, and even plating materials, time, etc., the relevant inductance parameters and plating parameters can be designed according to the needs of the system. 1 〇 ^ ^ Please contact the variable inductor as described in patent range 8, where as a $ arm, part of the micro-actuator movable electrode can be designed with different lengths, shapes and thicknesses to achieve low motion Voltage, high controllability ^ 2 purposes; when the cantilever beam section is appropriately reduced in width, long elastic, or punched holes in the cantilever beam, these factors will cause ', the reduction of the coefficient K value makes the cantilever The beam is easier to change gradually to achieve the purpose of low operating voltage. 200525810 11. The contact variable inductor described in the scope of patent application 2, its process compatibility is not limited to the CMOS process or other standard semiconductor integrated circuit processes. For the use of other processes such as MUMPS, SMart, MPMC … And so on. A single-frequency phase shifter, which includes ~ one-stage i multi-stage τ or 7Γ low-pass filter; ~ a control voltage source; ~ so-called low-pass filter from-to a number of high change rate It consists of a contact variable capacitor and one or more fixed inductors. The so-called fixed inductor's inductance value is selected according to the operating frequency, and then the so-called variable capacitor's capacitance value is changed to achieve a set phase offset. The low-pass filter state is connected in series. Only one control voltage is needed to change all the variables.