TWI291550B - Device for measuring micro-wavelength variation and the method thereof - Google Patents
Device for measuring micro-wavelength variation and the method thereof Download PDFInfo
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1291550 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種微小波長變化測量裝置盘方法 衣1/、万沄特別是關於一種利 用對掌性Uhimi)晶體的光學雛與絲料差干涉技術的微小波長變 化測量裝置及測量方法。 【先前技術】 光電精密量測的技術不論在原理、技術以及在相關應用的領域上都極 為廣泛’其應㈣發展也是越來越日新月異。近年來光學干涉儀或是光學 光柵的測量方式,常以微小波長變化當作―種測量的手段,由於它可以提 供-個簡單_储構和高準確度的測量結果,目前已經被廣泛地應用在 許多不同的領域中,例如:氣體流動偵測、機械擾動感測、壓力感測、絕 對距離里麟’以及在原子物理方面的細。由於這齡_量的解析度 和微小波長的變化有密切的關聯,因此如何精確測量微小波長的變化,將 有助於提昇該系統測量的解析度與靈敏度。 目前測量微小波長變化駐要技術可以分域射㈣及干涉儀架構兩 類’而這兩類型之架構各有其應用及使用限制。 繞射架構最主要是利用光柵繞射的原理,將不同波長的光繞射至不同 位置,經由電荷耦合元件(CCD)陣列接收,以達到光波分散的目的,進而 監測光波長之變化。一般而言,利用繞射架構所可解析的波長變化量大約 為0.5 nm,所使用的光柵間距大約為1〇〇娜;然而,若要提高波長變化的 5 1291550 解析度’則必須將光柵的間距變小。 另一種干涉儀架構則大多利用Fab时咖干涉儀來做波長變化的解 析置測,此紐是·改振關距來對人做長作解析。最近錢尤 Flavin,^/. (N. K. Berger, B. Levit, A. Bekker, and B. Fischer>* 的解減為0.術nm ;錢’由於此技術偏時結合干涉儀及繞射光柵, 故其畺測系統的操作較一般系統更為複雜。 伽c. ^ 36’(2_ 1189.)提出結合麥克森干涉儀及布拉格繞射光 拇的測量技術,#干涉儀的絲差為1. ^時,大約可崎驗長變化量1291550 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for measuring a micro-wavelength variation measuring device, and in particular, relating to an optical embryo and silk material interference using a palm-shaped Uhimi crystal. Technology for small wavelength change measuring devices and measuring methods. [Prior Art] The technology of photoelectric precision measurement is extremely extensive in terms of principle, technology, and related fields. The development of (4) is also changing with each passing day. In recent years, the measurement methods of optical interferometers or optical gratings often use small wavelength changes as a means of measurement. Because it can provide a simple_construction and high-accuracy measurement results, it has been widely used. In many different fields, such as: gas flow detection, mechanical disturbance sensing, pressure sensing, absolute distance Lilin' and fine in atomic physics. Since the resolution of this age is closely related to the change of tiny wavelengths, how to accurately measure the change of small wavelengths will help to improve the resolution and sensitivity of the measurement of the system. At present, the technology for measuring small wavelength variations can be divided into two types: domain (4) and interferometer architecture. Both types of architectures have their application and usage restrictions. The main purpose of the diffraction architecture is to use the principle of grating diffraction to diffract light of different wavelengths to different positions and receive it through a charge coupled device (CCD) array to achieve the purpose of light wave dispersion, and then monitor the change of light wavelength. In general, the wavelength variation that can be resolved by the diffraction architecture is about 0.5 nm, and the grating spacing used is about 1 ;; however, to increase the wavelength variation of 5 1291550 resolution, the grating must be The pitch becomes smaller. In another type of interferometer architecture, most of the Fab-time interferometers are used for the analysis of wavelength changes. This is to change the distance to make a long analysis. Recently, Qian You Flavin, ^/. (NK Berger, B. Levit, A. Bekker, and B. Fischer) * is reduced to 0. surgery nm; money 'because this technology is combined with interferometer and diffraction grating, Therefore, the operation of the speculative system is more complicated than that of the general system. Ga C. ^ 36' (2_ 1189.) proposes a measurement technique combining the McKinson interferometer and the Bragg diffraction optical thumb. The difference of the # interferometer is 1. ^ When, about the change in the length of the check
有鑑於此,本發明利用對掌性(chiral)晶體的光學活性之特性, 並配合共絲外差干涉技術,提出—種光學干涉儀的微小波長變化測 量裝置及其方法。 【發明内容】 本發明之一目的係在提供一種微小波長變化測量裝置及其方法,其係 &用對雜晶體和共光料差干涉技術,以光學干涉儀的簡單架構有效 偵測微小波長的變化量。 本發明之另一目的係在提供一種微小疼長變化測量裝置及其方法,其 係具有架構簡單、操作容易、即時、快速、可避免外界環境擾動影響以及 高靈敏度等之優點。 本發明之再一目的係在提供一種微小波長變化測量裝置及其方法,其 係可操作在大酬波長變化的量測上。 本發明提出一種微小波長變化鲫量装置,包括一外差光源,其係為一 6 1291550 雷射光源並可入射至一測試模組中的一四分之一波片後產生旋光外差光 源,並入射至一對掌性晶體,當旋光外差光源入射至對掌性晶體時,其 光學活性會隨著雷射光源之波長變化而產生旋轉角的變化量;並有一計算 裝置可根據測試模組產生之相位變化量計算取得該雷射光源之波長變化 量0 本發明另外提出一種微小波長變化測量方法,其係先提供一外差光 源,其係為一雷射光源,此外差光源射出水平偏光與垂直偏光間有角頻差 的光線,令外差光源分別經過至少一光學路徑入射至一四分之一波片後產 生旋光外差光源,並入射至一對掌性晶體,以利用其光學活性會隨著雷射 光源之波長變化而產生旋轉角的相位變化量;最後根據此相位變化量計算 取得雷射光源之波長變化量。 底下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明 之目的、技術内容、特點及其所達成之功效。 【實施方式】 圖所示’本發明之微小波長變化測量裝置係包括一外差光 源10 ’其係射出水平偏光無直偏光間有角頻差的光線;一測試模組2〇主 要利用-四分之-波片205將外差光源轉成旋光外差光源,並利用一對掌 性晶體201的光學特性,使入射至對掌性晶體2()1的旋光外差光源將會隨 ,著雷射波錢化喊线轉肖的變化量;最後再透過_計算裝置%根據測 試模組20產生之變化量計算,利用外差干涉技術測量該旋轉角所引起的相 位變化,並進行推演計算即可求得雷射波長的變化量 。此部份為本發明之 7 1291550 主要精神與架構,底下接續針對各原理與架構流程詳細說明如后。 首先,在完整說明微小波長變化測量裝置與測量方法之前,先詳細解 釋旋光外差光源產生之光線經過對掌性晶體所產生的相位變化與 原理: § 一波長為/1的說光外差光源通過厚度為j的對掌性晶體後,其左旋 光與右旋光所產生的相位差可以表示為式G)所示:In view of the above, the present invention utilizes the optical activity characteristics of chiral crystals and the conjugated heterodyne interference technique to propose a micro wavelength variation measuring device and method thereof. SUMMARY OF THE INVENTION An object of the present invention is to provide a micro wavelength variation measuring apparatus and method thereof, which are capable of effectively detecting a small wavelength by a simple architecture of an optical interferometer by using a hetero-crystal and a common-light interference interfering technique. The amount of change. Another object of the present invention is to provide a micro pain length change measuring apparatus and method thereof, which have the advantages of simple structure, easy operation, immediate, rapid, avoidance of external environmental disturbance effects, and high sensitivity. Still another object of the present invention is to provide a micro wavelength variation measuring apparatus and method thereof which are operable to measure a change in a large wavelength. The invention provides a micro-wavelength variation measuring device, which comprises a heterodyne light source, which is a 61291550 laser light source and can be incident on a quarter-wave plate in a test module to generate an optically smoothing heterodyne light source. And incident on a pair of palm crystals, when the optical heterodyne source is incident on the palm crystal, its optical activity will change with the wavelength of the laser source, and a calculation device can be used according to the test mode. The phase change amount generated by the group is calculated to obtain the wavelength change amount of the laser light source. The present invention further provides a method for measuring a small wavelength change, which first provides a heterodyne light source, which is a laser light source, and the difference light source emits a horizontal level. The light having an angular frequency difference between the polarized light and the vertical polarized light causes the heterodyne light source to be incident on a quarter-wave plate through at least one optical path to generate an optical heterodyne light source, and is incident on a pair of palm crystals to utilize the same The optical activity produces a phase change amount of the rotation angle as the wavelength of the laser light source changes; finally, the wavelength change amount of the laser light source is calculated based on the phase change amount. The purpose, technical contents, features and effects achieved by the present invention will become more apparent from the detailed description of the embodiments and the accompanying drawings. [Embodiment] The small wavelength change measuring device of the present invention includes a heterodyne light source 10' which emits horizontally polarized light without angular frequency difference between straight polarized lights; a test module 2 is mainly used - four The wave plate 205 converts the heterodyne light source into an optical heterodyne light source, and utilizes the optical characteristics of the pair of palm crystals 201 to cause the optically heterodyne light source incident on the palm crystal 2() 1 to follow. The laser wave sings the amount of change of the line to the sway; finally, the _ calculating device % calculates the amount of change caused by the test module 20, and uses the heterodyne interference technique to measure the phase change caused by the rotation angle, and performs the derivation calculation. The amount of change in the laser wavelength can be determined. This part is the main spirit and architecture of the 7 1291550 of the present invention. The following is a detailed description of the principles and architectural processes. First, before fully describing the small wavelength change measuring device and measuring method, the phase change and principle generated by the light generated by the optical heterodyne light source through the palm crystal are explained in detail: § A heterodyne light source with a wavelength of /1 After passing through the palm-shaped crystal with thickness j, the phase difference between left-handed and right-handed light can be expressed as formula G):
其中,域么分別表示為右旋光與左旋光的波數(wave卿ber),β為圓偏 振光經過對掌性晶體產生的旋轉角;對於—般的對掌性晶體單位長度旋轉 角與光源波長;i之間的色散關係可以寫為式(2)所示: 卿㈠¥1^胃4, ⑵ 其中n、j、a和么是對掌性晶體相關的共振模型參數;將式⑵代入 式(1)中’則所產生的相位差如式(3)所示··Wherein, the domains are respectively expressed as the wavenumbers of the right-handed and left-handed lights, and β is the rotation angle of the circularly polarized light passing through the palm-shaped crystal; for the general rotation angle of the unit length of the palm-shaped crystal and The wavelength of the source; the dispersion relationship between i can be written as shown in equation (2): Qing (a) ¥1^ stomach 4, (2) where n, j, a and y are the resonance model parameters associated with the palm crystal; Substituting into equation (1), the phase difference produced by equation (3) is as shown in equation (3).
μ2-%)2 4(^2+4) —μ2 - (3) 由式(3)可知’相位差麟波長j的函數。故,當波長有微小變化△又時,則 相位差亦會產生微小的變化而ΔΑ與取關係可以被寫成式⑷: MS!蛛 、 (4) 因此,當鮮性晶_光學旋轉角受光源之波錢麵影響而引起相 位差的變化量得時’此鳴由式⑶及式⑷即可轉出波長的變 化量ΔΑ值。 i 8 1291550 由於外差光源射出經由一四分之一波片產生左旋偏光與右旋偏光間有 角頻差的光線經過對掌性晶體時,確實會產生相位差的變化量,因此,本 發明可藉由此特性來求得波長變化量。2-2-%)2 4(^2+4) - μ2 - (3) From the equation (3), the function of the phase difference rib wavelength j is known. Therefore, when there is a slight change in wavelength △, the phase difference will also produce a slight change and the relationship between ΔΑ and f can be written as equation (4): MS! spider, (4) Therefore, when the fresh crystal _ optical rotation angle is affected by the light source When the amount of change in the phase difference is caused by the influence of the wave surface, the ΔΑ value of the wavelength change can be transferred from the equations (3) and (4). i 8 1291550 Since the heterodyne light source emits light having an angular frequency difference between the left-handed polarized light and the right-handed polarized light through a quarter-wave plate and passes through the palm-shaped crystal, the amount of change in the phase difference does occur, and thus the present invention The amount of wavelength change can be obtained by this characteristic.
請再參閱第一圖所示,本發明所使用光源是由水平(/>-)與垂直(5~) 偏光間角頻差為仍的外差光源(尤,)10,其中此外差光源10係包括一可調 式雷射光101,可發射出一線性偏振之雷射光源,並有一函數產生器1〇2可 產生一波形函數訊號,此訊號再經一線性電壓放大器1〇3進行電壓放大後, 利用一電光晶體調制器104對經過函數產生器1〇2與線性電壓放大器1〇3 之訊號進行調制,以發射出具有角頻差的外差光源。當此外差光源1〇經分 光器測試模組20中的分光器202後則被分成兩束光:一反射光束和一穿透 光束,此二光束係分別具有一條光學路徑。其中,反射光束先經過穿透軸 與X轴夾45。的第一檢偏板203後並進入到第一光偵測器204上,而此時到 達第一光偵測器204的光之瓊斯(J〇nes)向量可表示為式:Referring to the first figure, the light source used in the present invention is a heterodyne light source (especially) 10 which is still between the horizontal (/>-) and the vertical (5~) polarized light, wherein the difference light source is further The 10 series includes an adjustable laser light 101 that emits a linearly polarized laser source, and a function generator 1〇2 generates a waveform function signal, which is then amplified by a linear voltage amplifier 1〇3. Thereafter, the signal passing through the function generator 1〇2 and the linear voltage amplifier 1〇3 is modulated by an electro-optical crystal modulator 104 to emit a heterodyne light source having an angular frequency difference. When the difference light source 1 passes through the beam splitter 202 in the beam splitter test module 20, it is split into two beams: a reflected beam and a penetrating beam, each of which has an optical path. Wherein, the reflected beam first passes through the transmission axis and the X-axis clamp 45. After the first analyzer 203 enters the first photodetector 204, the J〇nes vector of the light reaching the first photodetector 204 can be expressed as:
Er=ANr(45°)-BS-Ein ifl lYe -W2 2(1 l人 〇 em ΊϊEr=ANr(45°)-BS-Ein ifl lYe -W2 2(1 l person 〇 em Ίϊ
f cos V cot Tf cos V cot T
其中,仏為外絲__向量,齡錢敝祕陣,⑹為光經BS 反射後所引起的相位差。因此,在第-光偵測器204上,所測得的光強度 形式可表示為式(6): 2 1 八=|五r| =^[1 + COS(奴一 D], 9 (6) 1291550 其中,/r為參考信號。 另一方面,穿透光束則經過快軸與χ轴夾奶。的第一四分之一波片205 後即成為旋光外差光源,此旋光外差光源經過長度為j的對掌性晶體2〇1 後,並經過快軸與X轴夾135。的第二四分之一波片206,此時的瓊斯向量 可表不為式(7): 馬= ΊιAmong them, 仏 is the outer wire __ vector, the age of money is secret, and (6) is the phase difference caused by the light reflected by the BS. Therefore, on the first photodetector 204, the measured form of light intensity can be expressed as equation (6): 2 1 eight = | five r | = ^ [1 + COS ( slave one D], 9 (6 1291550 where /r is the reference signal. On the other hand, the penetrating beam passes through the fast axis and the x-axis, and the first quarter-wave plate 205 becomes the optical heterodyne source. After the length of j is opposite to the palm crystal 2〇1, and passes through the fast axis and the X-axis clip 135. The second quarter-wave plate 206, the Jones vector at this time can be expressed as equation (7): = Ίι
icoi / 2-ikrdIcoi / 2-ikrd
e-iGM/2~iklCi ⑺e-iGM/2~iklCi (7)
五2 = V2 (Λίωί/2-2ί^+ΐφΜ -ΐωί/2-2ΐ^(ί+ίφΜ Ll〇J5 2 = V2 (Λίωί/2-2ί^+ΐφΜ -ΐωί/2-2ΐ^(ί+ίφΜ Ll〇J
接著’電場名經過高反射率面鏡207垂直反射後,循原路而回,依序通過 第二四分之一波片206、對掌性晶體2〇1及第一四分之一波片205後,此時 電場形式可表示為式(8): ⑻ 其中’办為光經尚反射率面鏡207反射後所引起的相位差。之後,光再經 由分光器202反射後通過穿透軸與X軸夾45。的第二檢偏板208,最後再進 入到第二光偵測器209上,此時到達第二光偵測器的光之瓊斯向量可寫為 式(9) ··Then, the electric field name is vertically reflected by the high reflectance mirror 207, and then returns through the original path, sequentially passing through the second quarter wave plate 206, the palm crystal 2〇1, and the first quarter wave plate. After 205, the electric field form can be expressed as equation (8): (8) where 'the phase difference caused by the reflection of the light reflectance mirror 207. Thereafter, the light is reflected by the beam splitter 202 and passed through the transmission axis and the X-axis clamp 45. The second analyzer 208 is finally re-entered into the second photodetector 209, and the Jones vector of the light reaching the second photodetector can be written as (9).
Ef = ^Ι2-ΐ2Κά+ΐφΚί-ΐφΒ5Ι2 敁/2-/2州“/2 因此,在第二光偵測器209上所測得的測試信號/^則可以表示為式(1〇): Λι=|^/| =-[l + cos(^ + ^/-^)], (10) 其中,办/為旋光外差光源之圓偏振光穿過及反射在對掌性晶體201之後 所產生的相位差,其可以表示為式(11): (11) 1291550 根據式⑹式及式(1G),將參考信號;^測試信號/u同時輸入至計算 裝置30中之鎖相放大器301中後,便可得到光經由對掌性晶體2〇ι所引進 的相位差i值。在第二姻量上,讓雷射絲的波長改變驗^,此時 的測試信號/t2可以表示為式(12): hi =^ + oos(ωt + φ,2-φBS)]. (⑵ 其中,〆2可以利用上述相同的方法解得。因此將所測得的相位差變化量 △《=2△多’代入式⑷中,即可求得微小波長的變化量△乂。以 上整個計算過程,即是利用共光程外差干涉技術測量相位變化量。 在說明完本發明之技術特徵與原理之後,為了驗證本發明之可行性, 特舉-實随絲進行驗證。在實驗測試上,本發明翻的對掌性晶體為 10釐米(mm)厚的Bu2Ge〇2()(BGO)來量測雷射光源波長由632·6奈米 變化到633· 6 nm,其中初始的波長為633·! nm。則晶體的單位長度旋轉 角與光源波長之間的色散關係中相關共振模型的參數分別為&=1853 _ ™ βΤΆ ' Ζ^-0. 00295 deg mm /zm2. c/a=-〇. 7715 deg mm'1 ^ λ/=〇. 4015//m 和几^0.2421 "m。電光晶體調制器(Model 4〇〇2, NewFocus,Inc·)被 1kHz 的錫齒波和半波電壓為125 Γ的函數產生||所湖,同時制解析度為 0.001 的鎖相放大器(Model SR-850,Stanford Research System)測量 相位差,也利用個人電腦去記錄且分析數值。實驗的結果如第二圖所示, 第二圖表示為相位差的變化量對波長變化量ΔΛ之間的關係圖,為了能 夠與雷射讀取值作味,因此本發明將雷射輸出波讀取值从和測量值 △又同時樹會在同〜張圖上,其結果如第三晒示。第三圖上所標示的□和 1291550 刀別表不為雷射輸出波長的讀取值和測量值,由第三圖可以清楚看出測 量值ΔΑ和雷機蚊長_取值从之間有非常韻對應性。 由於對掌性⑽的雜肖度減長的色散隱可制是連續且變化範 圍大的曲線’ g此在本發明巾可將波長變化量的制範酸大。然而,對 於波長ι化里的蝴範圍變越大時,對電光晶體調㈣而言,其調制電壓 將曰有所不同’所以會影響偏振光的極性,恐造成制的不準雜;為了Ef = ^Ι2-ΐ2Κά+ΐφΚί-ΐφΒ5Ι2 敁/2-/2 state "/2 Therefore, the test signal /^ measured on the second photodetector 209 can be expressed as a formula (1〇): Λι =|^/| =-[l + cos(^ + ^/-^)], (10) where the circularly polarized light of the optical/difference heterodyne source passes through and is reflected after the palm crystal 201 The phase difference, which can be expressed as Equation (11): (11) 1291550 According to Equation (6) and Equation (1G), the reference signal; ^ test signal /u is simultaneously input to the lock-in amplifier 301 in the computing device 30. The phase difference i value introduced by the light through the palm crystal 2〇ι can be obtained. On the second marriage amount, the wavelength of the laser light is changed, and the test signal /t2 at this time can be expressed as a formula ( 12): hi =^ + oos(ωt + φ,2-φBS)]. ((2) where 〆2 can be solved by the same method as above. Therefore, the measured phase difference variation △ "= 2 △ In the substitution type (4), the amount of change of the small wavelength Δ乂 can be obtained. The entire calculation process is to measure the phase change amount by the common path heterodyne interference technique. After explaining the technical features and principles of the present invention. In order to verify the feasibility of the present invention, it is specifically tested with the wire. In the experimental test, the inverted palm crystal of the present invention is 10 cm (mm) thick Bu2Ge〇2 () (BGO) to measure the thunder. The wavelength of the source is changed from 632·6 nm to 633·6 nm, and the initial wavelength is 633·! nm. The parameters of the correlation resonance model in the dispersion relationship between the unit length rotation angle and the source wavelength are respectively &;=1853 _ TM βΤΆ ' Ζ^-0. 00295 deg mm /zm2. c/a=-〇. 7715 deg mm'1 ^ λ/=〇. 4015//m and several ^0.2421 "m. electro-optic crystal The modulator (Model 4〇〇2, NewFocus, Inc.) is produced as a function of a 1 kHz tin-toothed wave and a half-wave voltage of 125 |. | Lake, a phase-locked amplifier with a resolution of 0.001 (Model SR-850) Stanford Research System) measures the phase difference and also uses a personal computer to record and analyze the values. The results of the experiment are shown in the second figure, and the second figure shows the relationship between the amount of change in phase difference and the amount of change in wavelength ΔΛ. In order to be able to taste with the laser reading value, the present invention compares the reading value of the laser output wave with the measured value Δ The time tree will be on the same ~ sheet, and the result will be the third. The □ and 1291550 knives marked on the third chart are not the reading values and measured values of the laser output wavelength. It can be clearly seen from the third figure. It can be seen that there is a very rhyme correspondence between the measured value ΔΑ and the Thunder mosquito length_ value. Since the dispersion of the palmity (10) is reduced, the dispersion can be made to be continuous and has a large variation range. This can make the formula of the wavelength variation larger in the present invention. However, when the range of the butterfly in the wavelength gamma becomes larger, the modulation voltage will be different for the electro-optic crystal modulation (4), so the polarity of the polarized light will be affected, which may cause mismatch in the system;
克服每個問題’本發明可在第—圖之架構巾再新增_回授控織置綱設 汁’印參閱第四圖所示,一鎖減大器3〇1仍係根據該測試訊號與該參考 訊號求得該相位差變化量;回授控制裝置網包括一示波器綱與一電腦 3〇2 ’電月| 302係連接該外差光源1〇與鎖相放大器3〇1,且示波器可偵測第 一光债測器綱之外差訊號,並據此回镇調整該外差光源1G與鎖相放大器 咖。第五圖所示為在實驗上所測得的半波電壓與光源波長之關係曲線圖, 故可藉由此關係曲線來獲得更精確的測量結果。此外,在實驗上也驗證, 田在不改變半波電壓之下,所測的波長在中心波長土2nm内皆有非常準確的 結果。 在本發明中,鎖相放大器的誤差、偏極混合誤差及偏振旋轉誤差將會 影響到相位量測的準確度,考慮這些誤差因素,本實驗的總相位誤差量約 s〇.〇3° ;接著由第二圖的實驗結果可以得到,當波長變化量Δ;ι為i胍時, 相位差的變化為3· 696。。將上述之值代入式(13)中: 即可计异出波長變化的誤差$△儿rr〖由計算的結果可以得A;Urrs〇e 00812 nm。 12 1291550 再者,本發明之另-特色是可使用任-同調光源來當作測試光源,而 不須預先得知統錄再來修正色散關赋。不卿於對掌性晶體之光學 活性而言同波長的光源,其對掌性晶體旋轉__能力將會 有所不同;第六圖則為BG0的光學旋轉角與波長之關係圖,由此 圖的結果可得知,對於短波長的光源而言,其對掌性晶體的旋轉角 會有較大旋轉能力,因此造成相位差的變化量也較大,所以在蜊Overcoming each problem 'The invention can be added to the frame towel of the first figure _ feedback control woven set design juice'. See the fourth figure, a lock reducer 3〇1 is still based on the test signal The phase difference variation is obtained from the reference signal; the feedback control device network includes an oscilloscope and a computer 3〇2 'Electric Moon|302 is connected to the heterodyne source 1〇 and the lock-in amplifier 3〇1, and the oscilloscope The difference signal of the first optical debt detector can be detected, and the heterodyne light source 1G and the lock-in amplifier can be adjusted accordingly. The fifth graph shows the experimentally measured half-wave voltage versus source wavelength, so that the relationship can be used to obtain more accurate measurements. In addition, it has been experimentally verified that the field does not change the half-wave voltage, and the measured wavelength has very accurate results within 2 nm of the central wavelength. In the present invention, the error of the lock-in amplifier, the polarization mixing error and the polarization rotation error will affect the accuracy of the phase measurement. Considering these error factors, the total phase error of the experiment is about s〇.〇3°; Then, from the experimental results of the second graph, when the wavelength change amount Δ; ι is i ,, the phase difference changes by 3.696. . Substituting the above values into equation (13): The error of the wavelength variation can be calculated as $Δ rr. From the calculated result, A can be obtained; Urrs〇e 00812 nm. 12 1291550 Furthermore, another feature of the present invention is that a any-coherent light source can be used as the test light source without having to know the recording in advance to correct the dispersion. The light source of the same wavelength is not clear for the optical activity of the palm crystal, and its ability to rotate the palm crystal __ will be different; the sixth graph is the relationship between the optical rotation angle of BG0 and the wavelength. As can be seen from the results of the graph, for a short-wavelength light source, the rotation angle of the palm crystal has a large rotation ability, and thus the amount of change in the phase difference is also large, so
量上會有較高的靈敏度’例如:在波長532⑽下,其波長變化的 靈敏度約為0.0023 nm。 ' 綜上所述,本發明利用了對掌性晶體的光學活性之特性,提出〜 種光學干涉儀的架構來偵測微小波長的變化量。本發明亦使用了共光 程外差干涉技術進行相位變化之量測,並利用計算裝置計算出波 長的變化量,依上所述,本發明將具有架構簡單、操作容易、即時、 快速、避免外界環㈣動影響與高錄度等的伽,同時也可操作在大範 圍波長變化的量測上。 以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使 熟習此項技藝之人士能夠瞭解本發明之内容並據以實施,當不能以之限定 本發明之專魏圍,即大凡依本發明所揭示之精神所作之均等變化或修 飾,仍應涵蓋在本發明之專利範圍内。 【圖式簡單說明】 第一圖為本發明微小波長變化測量裴置之一實施例的架構示意圖。 第二圖為本發明之相位差的變化量對波長變化量八又之間的關係圖。 13 1291550 第-圖為本發明之雷射輸丨波長的讀取值从和測量值△彳間之關係圖。 第四圖為在本發明之則、波長變化測量裝置帽增回授控繼置的架構示 意圖。 第五圖為在實驗上所測_半波龍與統波長之_曲線圖。 第六圖為光學旋轉角與波長之關係圖。 【主要元件符號說明】There is a higher sensitivity in quantity. For example, at a wavelength of 532 (10), the sensitivity of the wavelength change is about 0.0023 nm. In summary, the present invention utilizes the optical activity characteristics of the palm crystal, and proposes an optical interferometer architecture to detect the variation of minute wavelengths. The invention also uses the common optical path heterodyne interference technology to measure the phase change, and uses the computing device to calculate the variation of the wavelength. According to the above, the invention has the advantages of simple structure, easy operation, instant, fast and avoidance. The outer ring (four) dynamic influence and high-recording gamma can also be operated on the measurement of a wide range of wavelength changes. The embodiments described above are merely illustrative of the technical spirit and characteristics of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement them. Equivalent changes or modifications made by the spirit of the present invention should still be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic diagram of an embodiment of an embodiment of a small wavelength change measuring device of the present invention. The second graph is a graph showing the relationship between the amount of change in phase difference and the amount of change in wavelength of the present invention. 13 1291550 The first figure is a graph showing the relationship between the read value of the laser input wavelength and the measured value Δ彳 of the present invention. The fourth figure is a schematic diagram of the architecture of the wavelength change measuring device cap being added back to the control relay in the present invention. The fifth picture is the experimentally measured _ half-wave and the wavelength of the system. The sixth graph is a plot of optical rotation angle versus wavelength. [Main component symbol description]
1〇外差光源 101可調式雷射光 102函數產生器 103線性電壓放大器 1〇4電光晶體調制器 20測試模組 201對掌性晶體 M2分光器 203第一檢偏板 2〇4第一光偵測器 205第一四分之一波片 206第二四分之一波片 207高反射率面鏡 208第二檢偏板 209第二光偵測器 30計算裝置 Λ 301鎖相放大器 302電腦 303回授控制裝置 3〇4示波器1〇heterodyne light source 101 adjustable laser light 102 function generator 103 linear voltage amplifier 1〇4 electro-optic crystal modulator 20 test module 201 to palm crystal M2 beam splitter 203 first analyzer plate 2〇4 first light detection 205 first quarter wave plate 206 second quarter wave plate 207 high reflectivity mirror 208 second analyzer 209 second photodetector 30 computing device 301 lock-in amplifier 302 computer 303 Feedback control device 3〇4 oscilloscope
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