1290266 玖、發明說明： 【發明所屬之技術領域】 本發明是有關於一種超半球固態浸沒式透鏡之製 法，尤指一種可在同一正光阻層上製作超半球固態浸沒 式透鏡（SSIL)之半導體製程方法。 【先前技術】 按，一般習用技術之文獻如下·· 1 ·’’Fabication of photoplastic high-aspect ratio raicroparts and micromolds using SU-8 UV resist” Microsystem Technologies 4 (1998) 143-146。而上述 之文獻1中「用以製造具有高深寬比之多層厚度微結構 之製程」，是利用重複多次微影製程；需塗佈多次的光 阻；且此方法僅可應用在以負光阻為材料時，又文中所 提及之微結構材料為負光阻SU-8,曝光後結構堅硬；故 不易再配合後續之回流（ref low)做圖案之轉移與變化。 其製程方法是利用負光阻材料SU-8來製作出具有不同厚 度且同時具不同尺寸之立體微結構，基於負光阻的性 質，可以利用重複之光阻塗佈與微影製程即可做到，但 一來製程上將複雜許多，且更重要的是，以負光阻最後 製作出之微結構往往都相當的堅硬，不易再進行處理形 成所需之結構。因為在製作微透鏡時，微影製程配合回 流（reflow)製作微透鏡是普遍的一個方法，故若以負光 1290266 阻材料定義出微結構再配合回流，是無法使微結構形成 圓滑的球狀曲面。 2 · “Polyimide as the pedestal of batch fabricated micro-ball lens and micro-mushroom array” Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on , 21-25 Jan 2001。該文獻2「製作超半球固態浸沒式透鏡（SSIL)之方 法」，需先以一’’材料A”製作一載台；再以另一’’材料B” 定義一柱狀結構在該載台上；配合回流（ref low)步驟利 用下方載台内聚效果形成超半球固態浸沒式透鏡。上述 製程方法需經兩次光阻塗佈配合微影製程；較為複雜， 且需利用到兩種不會互相反應的材料，此製程方才可 行，而上述之製程方法最後製作出之超半球狀透鏡，其 下方還是有一載台存在，而超半球浸沒式透鏡用途多應 用於聚焦入射光至底部供記錄資料，故以檢索文獻2製 作出之超半球狀透鏡除非利用其他光路轉移，否則是無 法用於光儲存的記錄用的。 3 .‘‘Micro sol id immersion lens fabricated by micro-molding for near-field optical data storage，， Optical MEMS, 2000 IEEE/LEOS International Conference on ， 2卜24 Aug· 2000 Page(s): 91 -92。 而文獻3所述「製作超半球固態浸沒式透鏡（SSIL)之方 法」，需先利用濕蝕刻在矽基板上蝕刻出一半球狀凹槽作 1290266 為母模；接著利用熱壓高分子材料至母模内的方式製作 出超半球固態浸沒式透鏡。但以濕蝕刻欲在矽基板蝕刻 出半球狀凹槽；過程中極不易控制凹槽的輪廓與曲率， 且凹槽表面粗链度也大，需精準的調整触刻液配方、蚀 刻溫度、蝕刻時間、攪拌蝕刻液…等許多的蝕刻參數控 制，稍有一項不符合則蝕刻出之凹槽輪廓即不同於設計 的尺寸，故熱壓後製出之超半球固態浸沒式透鏡表面曲 率與光滑度很難滿足光學上之應用，製作過程費時變數 多且結果不易控制。 【發明内容】 因此，本發明之主要目的係在於，可利用單正光阻 層配合微影製程而具有不同高低厚度的微結構，再配合 回流（reflow)步驟，即可製作出超半球固態浸沒式透鏡 (SSIL)。 本發明之另一目的係在於，可較以往製作超半球固 態浸沒式透鏡（SSIL)的方式來的簡單，且尺寸與設計的 誤差值極小，具應用價值。 本發明之再一目的在於，可應用在光學讀取頭中， 而讀取頭中其他元件同樣可利用半導體製程與本製程製 作出之超半球固態浸沒式透鏡（SSIL)進行對準，整合批 次製作在一起。 口 、為達上述之目的，本發明係一種超半球固態浸沒式 透鏡之製法，係取一基材，並於該基材上塗佈單正光阻 1290266 層，之後先利用第一次足夠劑量之曝光，使得正光阻層 在顯影前即可產生顯微鏡可見的圖案，這是由於正光阻 層經過曝光後，曝光區域之性質與週遭未曝光區域不 同，在顯微鏡下觀察即會形成差異，故不需顯影仍可在 正光阻層上觀察到第一次曝光造成之圖案。接著將換上 第二片光罩進行第二次曝光，在第二次的曝光時，即可 利用正光阻層上由於第一次曝光產生之圖案來對準丨以 不同之曝光量進行第二次曝光，冑％罩圖案轉移至正光 阻層之特定位置上；上述步驟可反覆操作。再將正光阻 層拿去顯影後，由於多次曝光之曝光量與光罩圖案均不 同此時即可得到一層具有不同厚度與特定圖形之正光 阻層結構’整個製程僅需—層的正光阻層塗佈配合多次 曝光與-次的顯影，以上述方法重複操作，利用過程中 多次的曝光步驟，可製作出具有多種厚度與尺寸之正光 阻層結構。接著將此正光阻層結構配合後續之回流 (reflow)步驟，即可制作ψ ^ π pJ衣作出一超+球固態浸沒式透鏡 〇 【實施方式】 請^『第圖』所示，係本發明步驟一〜步驟 t:::::如圖所不：本發明係一種超半球固態浸沒 式透鏡之衣法，係包括下列步驟： i於取—基材1，該基材1可為任意基材1， 並於该基材1上塗料1光阻層u ; 1290266 阳Z驟二：取一具有圖案之第-片光罩12置於正光 曰i並以曝光機進行第—次曝光，使該正光阻 :ι上形成已曝光之正光阻區域i 2工，該第一次曝 光的劑量需至少可使正去P日s 上 便正九阻層1 1在顯影前，可以曝光 對準設備在正光阻層1 1上觀察^第-片光罩i 2 0圖案且。亥第-次曝光之曝光劑量多寡，乃是根據不 5正光阻層與厚度來決定，曝光劑量之決定方式，乃是 用對戶:塗佈之正光阻層1 1持續增加曝光劑量，直到 士光劑1可使該正光阻層i i在顯影步驟前，即可在曝 光機下以肉眼在正餘層1 1上觀察到第-次光罩i 2 上之圖案，而該有受到曝光機進行第—次曝光照射的正 光阻區域1 2 1深度為tl，該深度tl至少1〇 A ; —步驟三：再取一具有圖案之第二片光罩1 3，對正 光阻層1 1進行第二次的曝光，使該正光阻層丄1上形 成已曝光之正光阻區域i 3 i，在此第二次曝光步驟， 即可對準第-次曝光在正光阻層工丄上所產生的圖案 (正光阻區域1 2 1 )，使得第一片光罩1 2與第二片光 罩1 3上的圖案均可轉移至正光阻層i工之特定位置上 (即正光阻區域121、131)，該受到第二次曝光照 射的正光阻區域13 1深度為t2,該深度Ϊ2至少1〇人， 且該第二次曝光之曝光所造成的正光阻區域2 3 土可與 第—次曝光之曝光所造成的正光阻區域丄2丄有重複部 分，又該第二次曝光之劑量則由所需之正光阻層^ 1結 ^90266 構尺寸來決定，而上 13係為不同之光罩12與第二片光罩 光劍量的不同，絲、^ n周整第一次與第二次曝 3 ; 同厚度與不同尺寸之正光阻微結構 葬以四將基材1置入顯影液中顯影（圖中未干）， 曝光之正光阻Mi第一: 人曝光與第二次曝光中受到 至，::五：再對正光阻層1 1進行回流(灿。w)，直 (SSIL)^ "a而及回流（reflow)之溫度至少需足釣# 可制：疋’可以僅利用單層正光阻層1 1材料塗佈，即 口 ^乍超半球固態浸沒式透鏡（SSIL)3a，亦可在步驟三 之後：步驟四之前，換上第三片或是更多片之光罩，以 步私二操作之後，再操作步驟四的流程反覆 ^正光阻層Η上得到大於兩種厚度之正光阻微結= d 〇 以下為本發明較佳實施例之說明（再參閱第1〜第5 圖）··先於一基材1上塗佈一層正光阻層工丄，如第1圖 所示。接著配合第一片光罩12之圖案進行第一次曝 光，曝光劑量為E!，此曝光量在正光阻層2上上形成一 1290266 易溶解於顯影液之正 1 , 尤阻區域1 2 1 ;正光阻區域工2 阻區域二此曝光劑量&足夠在使所形成之正光 的對準僅〜命進订顯影之前，即可藉由曝光設備上 = Γ如第2圖所示。接著以第二片光罩 H . s , 〇 丁弟一_人曝先，曝光劑量為h，此時第二 卓13之圖案，即可蕪由 層1 1上所產生之正次曝光在正光阻 "卜.生之正先阻區域1 2 1，轉移到正光阻層 /成另易；谷解於顯影液之正光阻區域1 3 眼光岬ί二區域131之深度為t2。而藉由調整第二次 控制正光阻區域131僅限於分佈在正 : 之上半層，如第3圖所示。接著將基材1置 阻層11之_液進行顯影’即可溶解掉經前兩 曝光所形成之正光阻區域121與131，在正光阻 二1 1亡：成一具有特定尺寸且高低起伏之正光阻微結 構3，如弟4圖所示，此結構3可藉由第一、二片光罩 1 2 1 3之圖案疋義出來’且該正光阻微結構3上包 含-圓柱狀結構3丄與一光阻平板3 2。接 行回流（W)，即可使圓柱狀結構31自㈣成= ，球之結構’配合光阻平板3 2，即可形成超半球固態 改沒式透鏡（SSIL)結構3 a，如第5圖所示。 惟以上所述者，僅為本發明之較佳實施例而已，當 不能以此限定本發明實施之範圍；故，凡依本發明申; 專利範圍及發明說明書内容所作之簡單的等效變化與^ 1290266 飾，皆應仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 第1圖，係本發明步驟一之示意圖 第2圖，係本發明步驟二之示意圖。 第3圖，係本發明步驟三之示意圖。 第4圖，係本發明步驟四之示意圖。 第5圖，係本發明步驟五之示意圖。 _ 【元件標號對照】 基材1 正光阻層1 1 第一片光罩1 2 正光阻區域1 2 1 第二片光罩1 3 正光阻區域1 3 1 正光阻微結構3 · 超半球固態浸沒式透鏡（SSIL)結構3 a 圓柱狀結構3 1 光阻平板3 2 正光阻區域深度t、t2 121290266 发明, invention description: [Technical field of the invention] The present invention relates to a method for manufacturing a super hemispherical solid immersion lens, and more particularly to a semiconductor capable of fabricating a super hemispherical solid immersion lens (SSIL) on the same positive photoresist layer. Process method. [Prior Art] According to the literature of the conventional techniques, 1·''Fabication of photoplastic high-aspect ratio raicroparts and micromolds using SU-8 UV resist" Microsystem Technologies 4 (1998) 143-146. The process for manufacturing a multilayer thickness microstructure having a high aspect ratio is to use a repeated lithography process; a photoresist that needs to be coated multiple times; and this method can only be applied when a negative photoresist is used as a material. The microstructure material mentioned in the text is a negative photoresist SU-8, and the structure after hardening is hard; therefore, it is not easy to cooperate with the subsequent reflow (ref low) to make pattern transfer and change. The manufacturing method is to use the negative photoresist material SU-8 to fabricate three-dimensional microstructures with different thicknesses and different sizes at the same time. Based on the properties of negative photoresist, it can be done by repeated photoresist coating and lithography process. However, once the process is more complicated, and more importantly, the microstructures finally produced with negative photoresist are often quite hard and difficult to process to form the desired structure. Because in the fabrication of microlenses, the lithography process is a common method for reflowing microlenses. Therefore, if the microstructure is defined by the negative light 1290266 and the reflow is combined with the reflow, the microstructure cannot be formed into a smooth spherical shape. Surface. 2 · "Polyimide as the pedestal of batch fabricated micro-ball lens and micro-mushroom array" Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on, 21-25 Jan 2001. In the literature 2, "Method for making a super hemispherical solid immersion lens (SSIL)", it is necessary to first make a stage with a 'material A'; and define another columnar structure at the stage with another 'material B'. The ref low step is used to form a super hemispherical solid immersion lens by utilizing the cohesive effect of the lower stage. The above process method requires two photoresist coatings and a lithography process; it is complicated, and two kinds of materials which do not react with each other are required, and the process is feasible, and the above process method finally produces a super hemispherical lens. There is still a stage below it, and the use of the super hemisphere immersion lens is mostly used to focus the incident light to the bottom for recording data. Therefore, the super hemispherical lens produced by searching the literature 2 cannot be used unless it is transferred by other optical paths. Used for recording of light storage. 3. 'Micro sol id immersion lens fabricated by micro-molding for near-field optical data storage,, Optical MEMS, 2000 IEEE/LEOS International Conference on, 2 Bu 24 Aug· 2000 Page(s): 91-92. The method for making a super hemispherical solid immersion lens (SSIL) described in Document 3 requires first etching a semi-spherical groove on the ruthenium substrate to make 1290266 a master mold by wet etching; A super hemispherical solid immersion lens is produced in the manner of the master mold. However, wet etching is required to etch a hemispherical groove on the ruthenium substrate; it is extremely difficult to control the contour and curvature of the groove during the process, and the groove surface has a large thickness, which requires precise adjustment of the etchant formulation, etching temperature, and etching. Time, stirring etchant, etc., many etching parameters are controlled. If there is a slight mismatch, the etched groove profile is different from the designed size, so the surface curvature and smoothness of the super hemispherical solid immersion lens produced after hot pressing It is difficult to meet optical applications, and the production process takes many time-consuming variables and the results are difficult to control. SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to use a single positive photoresist layer in combination with a lithography process to have microstructures of different heights and thicknesses, and in conjunction with a reflow step, a super hemisphere solid immersion type can be fabricated. Lens (SSIL). Another object of the present invention is to make the super hemisphere solid immersion lens (SSIL) simpler than conventional methods, and the error value of size and design is extremely small, and has application value. A further object of the present invention is that it can be applied to an optical pickup head, and other components in the read head can also be aligned by using a semiconductor process and a super hemispherical solid immersion lens (SSIL) fabricated by the process. Made together. In order to achieve the above purpose, the present invention is a method for manufacturing a super hemispherical solid immersion lens by taking a substrate and coating a single positive photoresist 1290266 layer on the substrate, and then using the first sufficient dose. Exposure, so that the positive photoresist layer can produce a microscope-visible pattern before development. This is because the properties of the exposed area of the positive photoresist layer are different from those of the unexposed areas after exposure, and the difference is observed under the microscope. Development still observes the pattern caused by the first exposure on the positive photoresist layer. Then, the second reticle is replaced by a second exposure. In the second exposure, the pattern generated by the first exposure on the positive photoresist layer can be used to align with 不同 with different exposure amounts. The secondary exposure, the 胄% mask pattern is transferred to a specific position of the positive photoresist layer; the above steps can be repeated. After the positive photoresist layer is removed for development, since the exposure amount of the multiple exposures is different from that of the mask pattern, a positive photoresist layer structure having different thicknesses and specific patterns can be obtained, and the entire process requires only a layer of positive photoresist. The layer coating is combined with multiple exposures and developments, and the operation is repeated in the above manner. By using multiple exposure steps in the process, a positive photoresist layer structure having various thicknesses and sizes can be produced. Then, the positive photoresist layer structure is combined with a subsequent reflow step, and a + ^ π pJ garment can be fabricated to make a super + ball solid immersion lens. [Embodiment] Please refer to the following figure. Step 1 to Step t::::: As shown in the figure: The present invention is a method for coating a super hemispherical solid immersion lens, comprising the following steps: i. taking the substrate 1, the substrate 1 may be any base Material 1, and coating 1 photoresist layer u on the substrate 1; 1290266 Yang Z step 2: taking a patterned first-piece mask 12 placed in the positive light 曰i and performing the first exposure with an exposure machine, The positive photoresist: ι is formed on the exposed positive photoresist region i 2, the dose of the first exposure needs to be at least for the positive P-day s on the positive nine-resist layer 1 1 before development, the exposure alignment device can be exposed The first-piece reticle i 2 0 pattern is observed on the positive photoresist layer 1 1 . The exposure dose of the first exposure is determined according to the thickness of the non-positive photoresist layer and the thickness. The method of determining the exposure dose is to increase the exposure dose by using the coated positive photoresist layer 1 1 The photoreceptor 1 can make the positive photoresist layer ii observe the pattern on the first mask ii on the positive residual layer 1 1 under the exposure machine before the developing step, and the exposure is performed by the exposure machine. The positive photoresist region of the first exposure is 1 2 1 with a depth of t1, and the depth t1 is at least 1 〇A; - Step 3: taking a second reticle 13 having a pattern, and performing the first photoresist layer 1 1 The second exposure causes the exposed photoresist region i 3 i to be formed on the positive photoresist layer ,1, and the second exposure step can be aligned with the first exposure on the positive photoresist layer. The pattern (positive photoresist region 1 2 1 ) is such that the patterns on the first reticle 12 and the second reticle 13 can be transferred to a specific position of the positive photoresist layer (ie, the positive photoresist regions 121, 131) The depth of the positive photoresist region 13 1 subjected to the second exposure is t2, the depth Ϊ 2 is at least 1 ,, and the second The positive photoresist region 2 3 caused by the exposure exposure may have a repeating portion with the positive photoresist region 丄2丄 caused by the exposure of the first exposure, and the dose of the second exposure is provided by the required positive photoresist layer ^ 1 knot ^ 90266 structure size to determine, and the upper 13 series is different from the different masks 12 and the second piece of mask light swords, the silk, ^ n weeks the first and second exposure 3; the same thickness and The positive photoresist microstructures of different sizes are buried in four to place the substrate 1 into the developer for development (not dried in the figure), and the positive photoresist of the exposure Mi first: the human exposure and the second exposure are received, ::5: Then, the positive photoresist layer 11 is reflowed (can.w), and the temperature of straight (SSIL)^"a and reflow is at least required to be fished. # 可制: 疋' can use only a single layer of positive photoresist layer 1 1 material coating, that is, the mouth helium super hemisphere solid immersion lens (SSIL) 3a, can also be after step three: before step four, replace the third or more reticle, step by step After that, the process of step 4 is repeated to obtain a positive photoresist micro-junction of more than two thicknesses on the positive photoresist layer = = d 〇 The described embodiment (see again FIG. 5 of 1 ~) · 1 on a substrate prior to applying a layer of positive working photoresist layer Shang, as in the first preferred embodiment shown in FIG. Then, the first exposure is performed with the pattern of the first reticle 12, and the exposure dose is E!, and the exposure amount forms a 1290266 on the positive photoresist layer 2, which is easily dissolved in the positive 1 of the developer, and the resistive region 1 2 1 The positive resistive area 2 resistive area two exposure doses & is sufficient to make the alignment of the formed positive light only before the development of the development, by means of the exposure device = as shown in Figure 2. Then with the second mask H. s, 〇丁弟一人 exposure, the exposure dose is h, at this time the pattern of the second Zhuo 13 can be the positive exposure produced by the layer 1 1 in the positive light Resistance " Bu. Raw positive resistance area 1 2 1, transfer to positive photoresist layer / into another easy; valley solution in the positive photoresist area of the developer 1 3 eye 岬 ί 2 area 131 depth is t2. By adjusting the second control of the positive photoresist region 131, it is limited to being distributed in the upper: upper half layer, as shown in Fig. 3. Then, the liquid-repellent layer 11 of the substrate 1 is developed to dissolve the positive photoresist regions 121 and 131 formed by the first two exposures, and the positive photoresist has a negative retardation: a positive light having a specific size and a high and low undulation The micro-structure 3, as shown in FIG. 4, can be deprecated by the pattern of the first and second masks 1 2 1 3 and the cylindrical structure 3 is included on the positive photoresist microstructure 3 With a photoresist plate 3 2 . By reflowing (W), the cylindrical structure 31 can be made from (four) to =, and the structure of the ball can be combined with the photoresist plate 3 2 to form a super hemispherical solid-state lens (SSIL) structure 3 a, as in the fifth The figure shows. However, the above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto; therefore, the simple equivalent changes made by the patent scope and the description of the invention are ^ 1290266 Decorations are still covered by the patents of this invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of the first step of the present invention. Fig. 2 is a schematic view showing the second step of the present invention. Figure 3 is a schematic diagram of the third step of the present invention. Figure 4 is a schematic view of the fourth step of the present invention. Figure 5 is a schematic diagram of the fifth step of the present invention. _ [Component label comparison] Substrate 1 Positive photoresist layer 1 1 First reticle 1 2 Positive photoresist area 1 2 1 Second reticle 1 3 Positive photoresist area 1 3 1 Positive photoresist microstructure 3 · Super hemisphere solid immersion Lens (SSIL) structure 3 a cylindrical structure 3 1 photoresist plate 3 2 positive photoresist region depth t, t2 12