I289876 九、發明說明： 【發明所屬之技術領域】 本發明係關於轉體晶圓製程中的快速熱處理㈣i d thermal pn)cessmg ’以下簡稱為贈)製程，特別是關於採旋轉半導體晶圓 方式進行均勻熱處理的RTP方法。 【先前技術】 在半V體製程中，快速熱處理或RTP製程係用於快速並且均句 地加熱晶® ’其通常被細在離子雜讀的射活化及擴散、 /成金屬則b物之後的回火處理以及閘極氧化層的回火處理等方 面。 在RTP製程中，單片晶圓被放置在密_腳反麟中，利 用特定熱縣預姐喊進行加熱，以快猶到所要求 的4。在/孤度控制方面，有以高溫計咖〇meter)量測感應晶圓所 輕射出的在某特定波長下的熱，以計算出最理想的精確度。過去 所努力的焦點都是放在如何精密地控溫而提高溫度的均一性，及 發展出不肖的加熱聊絲序崎低熱赫(th_lbudget)。然 而’影響半導體製程品質的因素除了 RTp製程溫度的均一性之 外，也不能忽視在RTP製程中產生的微粒污染。 請參閱第1圖，其緣示的是習知技藝RTP反應搶1G的剖面示 1289876 意圖，其中半導體晶圓12被平放在三根石英針u上’並準備以 配置在RTP反應擒10中的加熱燈管16及18進行加 ㈣具有外㈣’其具有高抛光内壁22，並有氣密門％使晶圓 传以進出。+導體晶圓的溫度係利用高溫計26進行量測，並連结 至電腦32以控制加熱燈管16及18的輪出，同時電腦也控制氣體 • 流量單元30以及製程氣體28。 • 壯技藝利用旋轉半導體晶圓的方式使其加熱溫度或使成長 在晶圓表面的薄膜能夠更為均勻，請參閱第2圖，錄示的是習 知咖方法的流程圖。首先，如步驟幻，先將半導體晶圓載入剛 剛降溫下麵RTP反應針，其巾轉體晶圓平放在石英針上， 且-開始，半導體晶_溫度約為室溫，低於RTP反應舱的内壁 /皿度(通㊉為3〇至80。〇。接著’如步驟44，使半導體晶圓水平旋 轉。接著’如步驟46，將製程氣體導入RTp反應搶中。最後，如 步驟48 ’以儲存在電腦中的預設攸程式，開始進行半導體晶圓 的加熱。然而，上述習知技藝以旋轉半導體晶圓方式進行均句熱 處理的RTP方法卻容易導入微粒污染。 【發明内容】 因此’本發明之主要目的在提供一種改良之半導體晶圓熱處理 方法以解决在RTp製程中可能產生的微粒污染問題。 根據本發明之較佳實施例，本發明揭露一種半導體晶圓之快速 1289876 熱處理方法，包含有以下步驟： ⑴提供-快速熱處理_反應艙，其包括有至少一加埶源 一旋轉驅動機制，用以轉動半導體晶圓，以及一>卻系統 冷卻該RTP反應驗之内壁； w ⑽一半導體晶圓載入該RTP反應艙中，此時該rtp反應驗 之内壁由該冷卻系統降溫至第一溫度； 一溫度’其中該 (3) 以該加熱源快速預熱該半導體晶圓至一第 第二溫度高於該第一溫度；以及 (4) 當該半導體晶_溫度到達料二溫鱗，始啟動該旋轉 驅動機制，進行該半導體晶_旋轉’且同時間亦持續將該半導 體晶圓的溫度拉升至第三溫度。 為了使貝審查委員能更清楚瞭解本發明之特徵及技術内 容’請參咖下有關本剌之詳細說__。細所附圖式僅 供參考與辅助5兒明用，並非用來對本發明加以限制者。 【實施方式】 本發明係提供一種新穎的RTP製程流程，特別修正在RTp製 程過程中晶圓的旋轉啟動時機，以解決在RTp製程中可能產生的 微粒污染問題。這種微粒污絲自於同—RTp反應艙需要處理許 多批次的晶圓，而使得RTP反應艙不可避免地會在其内壁上附著 污染物所致。當處理完某一片晶圓之後，下一片晶圓(存放在室溫 下)會自動地被載入到剛剛降溫下來的RTP反應艘中。 1289876 在習知技藝中，為了使產能能夠提昇或者其它製程因素，前述 的RTP反應搶通常被降溫至30至80°C左右，而不是室溫。當下 片曰曰圓被載入到RTP製程中，隨即開始旋轉，製程氣體也開始 /主入RTP反應艙巾’然後，儲存在電腦中的.預設升溫程式，這時 才被啟動並在所謂的「浸泡(soak)」模式下或者「尖峰(spike)」模 ， 式下進行旋轉中半導體晶圓的加熱。 在經過許多批次的晶圓的處理之後，發現到在RTP反應艙内壁 上附著並累積齡污染物。本案發日狀經過細悉碰察以及多 年經驗的累積發現到習知技藝的RTP製程流程會導致附著並累積 在RTP反應驗的較熱内壁上的微粒污染物有朝向剛載入RTp反應 臉中的半導體晶圓的較冷表面移動擴散之傾向，而造成半導體晶 ®的污染。這種發生在RTP製程早期階段的微粒污染物擴散傾向 會嚴重影響職續微影製㈣精紐，精惡化積㈣路產品的 可靠度、良率及品質。本發明之主要目的之—即在於去除這種發 ❿生在RTP製程早期階段的微粒污染物擴散傾向。 本發明經改良的RTP製程流程係在可採旋轉半導體晶圓方式 進行熱處理的先進RTP祕巾實施，這種RTp祕可以由許多知 名的快速熱處理設備供應商購得，例如美商應用材料公司(Applied Materials，Inc·)、德國瑪特森科技公司(Matts〇n Techn〇1〇gy，Inc )或I289876 Nine, invention description: [Technical field of the invention] The present invention relates to a rapid heat treatment in a process of a transfer wafer (4) i d thermal pn) cessmg 'hereinafter referred to as a gift" process, especially regarding the use of a rotating semiconductor wafer RTP method for uniform heat treatment. [Prior Art] In the half-V process, the rapid thermal processing or RTP process is used to rapidly and uniformly heat the crystal ® 'which is usually finely activated by the ion-missing and diffused, or after the metal is b Tempering treatment and tempering treatment of the gate oxide layer. In the RTP process, a single wafer is placed in the secret _ foot, used by a specific hot county pre-sister to heat up, so fast to the required 4. In terms of /degree of dominance control, the pyrometer meter is used to measure the heat at a specific wavelength that is directly emitted by the sensing wafer to calculate the optimum accuracy. In the past, the focus of efforts has been on how to precisely control the temperature and improve the uniformity of temperature, and to develop a fascinating heating and whispering heat (th_lbudget). However, in addition to the uniformity of the RTp process temperature, the factors affecting the quality of the semiconductor process cannot ignore the particle contamination generated in the RTP process. Please refer to FIG. 1 for the purpose of the prior art RTP reaction grab 1G profile view 1289876, in which the semiconductor wafer 12 is placed flat on three quartz pins u and is ready to be placed in the RTP reaction stack 10 The heating lamps 16 and 18 are applied (4) to have an outer (four)' having a highly polished inner wall 22, and an airtight door is used to pass the wafer in and out. The temperature of the conductor wafer is measured using a pyrometer 26 and coupled to a computer 32 to control the rotation of the heating lamps 16 and 18, while the computer also controls the gas flow unit 30 and the process gas 28. • Zhuang Art uses a rotating semiconductor wafer to heat the temperature or make the film grown on the surface of the wafer more uniform. See Figure 2, which shows a flow chart of the conventional coffee method. First, if the step is magic, the semiconductor wafer is first loaded into the RTP reaction needle just below the temperature, and the towel swivel wafer is placed flat on the quartz needle, and - the semiconductor crystal temperature is about room temperature, lower than the RTP reaction. The inner wall/span of the tank (passing 10 is from 80 to 80. 〇. Then 'step 44, the semiconductor wafer is rotated horizontally. Then' as in step 46, the process gas is introduced into the RTp reaction. Finally, as in step 48 'Starting the heating of the semiconductor wafer with a preset program stored in the computer. However, the above-described conventional RTP method of performing uniform heat treatment by rotating a semiconductor wafer is easy to introduce particulate contamination. The main object of the present invention is to provide an improved semiconductor wafer heat treatment method to solve the problem of particulate contamination that may occur in an RTp process. According to a preferred embodiment of the present invention, the present invention discloses a rapid heat treatment method for a semiconductor wafer 1289876. , comprising the following steps: (1) providing - rapid heat treatment _ reaction chamber, comprising at least one twisting source and a rotary driving mechanism for rotating the semi-conductive a wafer, and a system cooling the inner wall of the RTP reaction; w (10) a semiconductor wafer loaded into the RTP reaction chamber, at which time the inner wall of the rtp reaction is cooled by the cooling system to a first temperature; a temperature 'where the (3) rapidly preheating the semiconductor wafer with the heating source to a second temperature higher than the first temperature; and (4) when the semiconductor crystal temperature reaches a temperature scale Rotating the driving mechanism to perform the semiconductor crystal_rotation' and simultaneously increasing the temperature of the semiconductor wafer to the third temperature. In order to enable the board review committee to better understand the characteristics and technical contents of the present invention, please refer to the coffee. The following is a detailed description of the present invention. The drawings are for illustrative purposes only and are not intended to limit the invention. [Embodiment] The present invention provides a novel RTP process flow, in particular Corrects the rotation start time of the wafer during the RTp process to solve the problem of particulate contamination that may occur in the RTp process. This particulate fouling requires the processing of many batches of wafers from the same RTp reaction chamber. The RTP reaction chamber will inevitably be attached to the inner wall of the contaminant. When a wafer is processed, the next wafer (stored at room temperature) is automatically loaded into the RTP just cooled down. 1289876 In the prior art, in order to improve productivity or other process factors, the aforementioned RTP reaction is usually cooled to about 30 to 80 ° C, instead of room temperature. In the RTP process, the rotation begins, the process gas also starts / enters the RTP reaction cabin. Then, the preset temperature program stored in the computer is activated and is in the so-called "soak" mode. Or a "spike" mode, in which the semiconductor wafer is heated during rotation. After processing through many batches of wafers, it was found that ageing contaminants adhered to and accumulated on the inner wall of the RTP reaction chamber. The RTP process flow of the case has been discovered through careful observation and years of experience. The RTP process flow of the conventional technology will cause the particulate pollutants attached to and accumulate on the hotter inner wall of the RTP test to face the RTp-responsive face. The colder surface of the semiconductor wafer moves and spreads, causing contamination of the Semiconductor Crystal®. This tendency of particulate pollutants to diffuse in the early stages of the RTP process will seriously affect the reliability, yield and quality of the post-production micro-shadow system (4). The primary object of the present invention is to remove the propensity for the spread of particulate contaminants in the early stages of the RTP process. The improved RTP process flow of the present invention is implemented in an advanced RTP crust that can be heat treated by a rotating semiconductor wafer. This RTp secret can be purchased by many well-known rapid thermal processing equipment suppliers, such as American Applied Materials ( Applied Materials, Inc.), Mattstechnik Technology, Germany (Matts〇n Techn〇1〇gy, Inc) or
者德國史特克公司(Steag AST)。舉例來說，本發明經改良的RTp 製私流知可在德國史特克公司(Steag AST)所生產的Ste呢AST 9 Ϊ289876 00型RTP機台上進仃。通常，這類的阶機台包含有一說 A應艙’支撐半導體晶_部分特定_會以減於其它部位做 A轉使彳亏在加熱擁巾’铸體晶圓也等於相對於加熱源，例 幽素燈或鶴絲k ’做相對的旋轉動作。此外，RTP反應艙的内 ，常有-部份是能夠使自讀所釋放的熱輻射穿透，達到直接 / 1接句勻加熱曰曰圓的目的。由於這種㈣機台之使用在該領域 及業界乃通巾知識’因此其細部構造將不再贅述，以簡潔篇幅。 & 閱第3圖’其繪不的是本發明較佳實施例改良之腳製程 也圖如第3圖所不，首先進行步驟m，將半導體晶圓載入 反應驗中’I導體晶圓係靜置平放在$英針上，並不進行轉 =且此時半^體晶圓的溫度約為室溫，低於RTP反應餘的内壁 又^^為3〇至8〇C)。接著，如步驟⑼，先以儲存在電腦中 的預叹升/皿程式執行半導體晶圓的加熱升溫，此時，半導體晶圓 U靜置平放在石英針上，並不進行轉動。上述的電腦除了控制 =熱源的輸出功率之外，亦_可以控制RTP系統的旋轉驅動機 制以及控制製程氣體流量單元。 、本發月之特徵在於上述儲存在電腦中的預設升溫程式係在半 導體晶圓健靜置平放在石英針上，不進行轉_麟下即已啟 動，f該預設升溫程式包括有—預熱階段，其快速地將靜置平放 j英針上的半導體晶圓的溫度在極短時間内從原本的Τι(約為 至溫)加熱至丁2，其中丁2約為励至2坑，如步驟154。根據本 1289876 發明之較佳實施例，前述的預熱階段係由封閉迴路控制，並在固 定的加熱功率下進行，而通常達到溫度I的時間約為5至如秒 内。由於RTP反應艙的内壁是由冷卻水系統冷卻，其升溫不會^ 半導體晶圓般快速，如此，使得RTP反應搶_壁在完成前^的 預熱階段後，其溫度變成低於半導體晶圓的溫度。 - 如步驟156，在半導體晶圓的溫度達到丁2後，立即啟動RTp 鲁f統的旋轉驅動機制，這時才開始旋轉半導體晶圓，同時間亦繼 縯將半導體晶圓的溫度拉升到更高的製程目標溫度L。本發明 RTP系統賴轉軸卿可以域械方式，例如利職輪組合， 或者以磁力方式或氣動(gas-driven)方式。根據本發明之較佳實施 例，不論用何種旋轉驅動機制，半導體晶圓的旋轉速率約在7〇啊 至85轉之間，最重要的是在前述的預鋪段完成後，該旋轉驅 動機制始被啟動。 瞻在々驟156中’半導體晶圓從溫度丁2到更高的製程目標溫度 A的加熱過程仍是以前述的固定加熱功率進行。而實際的製程目 標溫度T3端視RTP製程之目的而決定，如離子佈植之後的接質活 化及擴散、形成金屬矽化物之後的回火處理或閘極氧化層的回火 處理專白有不同製程目標溫度&的設定。通常，製程目標溫度乃 介於700°C與ll〇〇°c之間。 此外，本發明並不限於在「浸泡(soak)」模式或者「尖峰(spike)」 11 1289876 核式下進行旋轉中半導體晶圓熱處理。請參閱第4圖以及第5圖， 其分別緣示的是本發明RTP製程在「浸泡(s〇ak)」模式及「尖峰 (spike)」模式下的升溫程式曲線圖，且财皆標示出啟動半導體晶 圓旋轉的時機點。销4圖中，當半導體晶圓從溫度⑽製程目 標溫度Ts後，溫度即保持在定值，並維持一段時間，例如，30至 90分鐘’而升溫程式曲線即有如圖所示的高原區域。之後，再將 •溫度降至3_°C，如步驟I%。第5圖所示的「尖峰(spike)」模 _ 式則無第4圖中的高原區域，直接在溫度達到製程目標溫度T3 後，立刻降溫到30-80。(：。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍 所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。German Steg AST. For example, the improved RTp system of the present invention can be found on the Ste AST 9 Ϊ 289876 00 RTP machine manufactured by Steg AST. Usually, this type of machine platform contains a saying that the A-cabin 'supports the semiconductor crystal_partially specific _ will be reduced from the other parts to make the A-turn loss in the heating of the towel. The casting wafer is also equal to the heating source. For example, the pygmy lamp or the crane k' do the relative rotation. In addition, in the RTP reaction chamber, there is often a part that is capable of penetrating the heat radiation released by the self-reading to achieve the purpose of heating the roundness directly/into the sentence. Since the use of this (four) machine is in the field and the industry is knowledge of the towel, its detailed construction will not be repeated, for the sake of simplicity. & 3, 'It is not a preferred embodiment of the preferred embodiment of the present invention. The improved process is also shown in Figure 3. First, step m is performed to load the semiconductor wafer into the test. The system is placed on the $-needle and is not rotated. At this time, the temperature of the half-wafer wafer is about room temperature, and the inner wall lower than the RTP reaction is 3〇 to 8〇C). Next, in step (9), the semiconductor wafer is heated and heated by the pre-slurry/dish program stored in the computer. At this time, the semiconductor wafer U is placed on the quartz needle and is not rotated. In addition to controlling the output power of the heat source, the above computer can also control the rotary drive mechanism of the RTP system and control the process gas flow unit. The feature of the present month is that the preset temperature-up program stored in the computer is placed on the quartz crystal in the semiconductor wafer, and is activated without being turned on, and the preset temperature-increasing program includes - in the preheating phase, which quickly heats the temperature of the semiconductor wafer resting on the j-pin in a very short time from the original Τι (approx. to temperature) to D2, where D2 is approximately 2 pits, as in step 154. According to a preferred embodiment of the invention of 1289876, the aforementioned preheating phase is controlled by a closed loop and is carried out at a fixed heating power, and typically the temperature I is brought to a time of about 5 to within seconds. Since the inner wall of the RTP reaction chamber is cooled by the cooling water system, the temperature rise will not be as fast as the semiconductor wafer, so that the temperature of the RTP reaction is lower than that of the semiconductor wafer after the preheating stage of the RTP reaction. temperature. - In step 156, after the temperature of the semiconductor wafer reaches D2, the RTp system is started immediately, and then the semiconductor wafer is rotated. At the same time, the temperature of the semiconductor wafer is further increased. High process target temperature L. The RTP system of the present invention can be used in a mechanical manner, such as a profit wheel combination, or in a magnetic or gas-driven manner. According to a preferred embodiment of the present invention, regardless of the rotational driving mechanism, the rotation rate of the semiconductor wafer is between about 7 〇 and 85 rpm, and most importantly, after the aforementioned pre-segment is completed, the rotary drive The mechanism was started. The heating process of the semiconductor wafer from temperature D2 to higher process target temperature A is still carried out at the aforementioned fixed heating power. The actual process target temperature T3 is determined by the purpose of the RTP process, such as the activation and diffusion of the graft after ion implantation, the tempering after the formation of the metal telluride or the tempering treatment of the gate oxide layer. Process target temperature & setting. Typically, the process target temperature is between 700 ° C and ll 〇〇 ° c. Further, the present invention is not limited to the heat treatment of the rotating semiconductor wafer in the "soak" mode or the "spike" 11 1289876 core. Please refer to FIG. 4 and FIG. 5 , respectively, which show the temperature rising program graphs of the RTP process of the present invention in the “s〇ak” mode and the “spike” mode, respectively. The timing of starting the rotation of the semiconductor wafer. In the pin 4 diagram, after the semiconductor wafer is subjected to the temperature (10) process target temperature Ts, the temperature is maintained at a constant value for a period of time, for example, 30 to 90 minutes, and the temperature rise program curve has a plateau region as shown. After that, reduce the temperature to 3_°C, as in step I%. The "spike" mode shown in Fig. 5 does not have the plateau area in Fig. 4, and immediately drops to 30-80 immediately after the temperature reaches the process target temperature T3. The above description is only the preferred embodiment of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
12 1289876 【圖式簡單說明】 第1圖繪示的是習知技藝RTP反應艙的剖面示意圖。 第2圖繪示的是習知RTP方法的流程圖。 第3圖繪示的是本發明較佳實施例之RTP製程流程圖。 第4圖以及第5圖分別繪示的是本發明RTP製程在「浸泡 (soak)」模式及「尖峰(spike)」模式下的升溫程式曲線圖。 【主要元件符號說明】 10 RTP反應艙 12 半導體晶圓 14 石英針 16 加熱燈管 18 加熱燈管 20 外殼 22 高拋光内壁 24 氣密門 26 南溫計 28 製程氣體 30 氣體流量單元 32 電腦 1312 1289876 [Simple Description of the Drawings] Figure 1 is a schematic cross-sectional view of a conventional art RTP reaction chamber. Figure 2 is a flow chart of a conventional RTP method. FIG. 3 is a flow chart showing the RTP process of the preferred embodiment of the present invention. Fig. 4 and Fig. 5 are graphs showing the temperature rise equations of the RTP process of the present invention in "soak" mode and "spike" mode, respectively. [Main component symbol description] 10 RTP reaction chamber 12 Semiconductor wafer 14 Quartz pin 16 Heating lamp 18 Heating lamp 20 Housing 22 High-polished inner wall 24 Airtight door 26 South thermometer 28 Process gas 30 Gas flow unit 32 Computer 13