TWI287570B - Polymer compound and polymer luminescent element using the same - Google Patents

Polymer compound and polymer luminescent element using the same Download PDF

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TWI287570B
TWI287570B TW092114227A TW92114227A TWI287570B TW I287570 B TWI287570 B TW I287570B TW 092114227 A TW092114227 A TW 092114227A TW 92114227 A TW92114227 A TW 92114227A TW I287570 B TWI287570 B TW I287570B
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Takanobu Noguchi
Yoshiaki Tsubata
Chizu Sekine
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Sumitomo Chemical Co
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Abstract

A polymer compound is provided. The polymer compound is characterized by containing one repeating unit represented by the formula (1), and having a polystyrene-reduced number average molecular weight of 10<3> to 10<8>. Wherein Ar1 and Ar2 each represent an aromatic hydrocarbon group or a heterocyclic group; X1 and X2 represent C(=O) or C(R1)(R2) for one, and O, S or C(=O) for another one; M represents O-C(=O), C(=O)-O, O, S, C(=O) or the like; Z1 represents -CR=CR- or -C=C-; and d represents 0 or 1.

Description

1287570 玖、發明說明 [發明所屬之技術領域] 本發明有關高分子化合物及使用該高分子化合物之高 分子發光元件(以下,亦簡稱高分子led(發光二極體)。)。 [先前技術] 由於高分子量之發光材料,係與低分子量之發光材料 不同,能溶於溶媒中且可依塗佈法而形成使用發光元件的 發光層之故’有很多關於此方面之研究,例如,周知有聚 伸苯基伸乙烯衍生物、聚芴衍生物、聚伸苯基衍生物等。 又,關於構成聯苯環的芳香環之鄰位間相互鍵結,介 由二至3個原子或原子群而具有形成5至7員環的構造的 聯苯何生物而言,在wo(世界專利)01/96454中揭示有如 下式所示的高分子化合物。[Technical Field] The present invention relates to a polymer compound and a high molecular light-emitting device (hereinafter, also referred to as a polymer led (light-emitting diode)) using the polymer compound. [Prior Art] Since a high molecular weight luminescent material is different from a low molecular weight luminescent material, it can be dissolved in a solvent and can form a luminescent layer using a light-emitting element according to a coating method. There are many studies on this aspect, For example, polyphenylene extended ethylene derivatives, polyfluorene derivatives, polyphenylene derivatives, and the like are known. Further, in the case where the ortho positions constituting the aromatic ring of the biphenyl ring are bonded to each other, and the biphenyl group having a structure of 5 to 7 members is formed by two to three atoms or a group of atoms, A polymer compound represented by the following formula is disclosed in Patent No. 01/96454.

八甲,A及B表示 ,cm_N=CR1_、CR1=CR2 (叫。 此°己载有以此高分子化合物作為基質(matrix),而對此 混合夺屬私7 、’而對此 口金屬硪子以形成發光層者。 又,在曰本專利特開平8_81 一 四氮m二基)衍生物 揭不有聚(4,5,9,1〇 [發明内容J 本發明者等 就 能作為發光材料使用的新穎的高分 314723 5Bajia, A and B indicate that cm_N=CR1_, CR1=CR2 (called. This ° already contains this polymer compound as a matrix, and this mixture is a private one, 'and this metal 硪In order to form a light-emitting layer, in addition, in the patent of the Japanese Patent Laid-Open No. 8_81, a tetrazolium m-diyl derivative, there is no poly(4,5,9,1〇[Inventive content J, the inventor, etc. can be used as a light Innovative high scores for material use 314723 5

I25/3/U 化合物專心研究的結果, 環,而具有此等芳環以特^現在反複單元中具有2個芳 子化合物,適用於於^义鍵結所結合而成的構造之高分 X无才才料或雷 於元成本發明。 ' 包何傳輸材料等的事實,終 亦即,本發明係有關 聚苯乙烯換算之數平均八方忒(1)所示的反複單元,以 子化合物。 =刀子1為1χ 1〇3至lx 1〇8的高分 X1 X2I25/3/U compound concentrates on the result of the study, the ring, and has the aromatic ring to have two aromatic compounds in the repeating unit, which is suitable for the high score X of the structure formed by the combination of the meaning bond Only then can the material or the cost of the invention. In the end, the present invention relates to a repeating unit represented by the average number of polystyrenes (1) in terms of polystyrene. = knife 1 is 1χ 1〇3 to lx 1〇8 high score X1 X2

⑴ 4價之芳族烴基或4 [式中,Ar丨及Ar2分別獨立表示 價之雜環基。 X1及X2表示任—方為c(,或c(ri)(r2)而另一方為 〇、S、c(=0)、s(=Q)、sc&gt;2、Si(R3)(R4)、N(R5)、離6)、 P(R7)或 p(=o)(r8)。] (式中 ’R丨、R2、R3、R4、R5、R6、R7mR4^ 立表示氫原子、鹵素原子、烷基、烷氧基、烷硫基、烷胺 基、芳基、芳氧基、芳硫基、芳胺基、芳烷基、芳基烷氧 基、芳基烷硫基、芳基烷胺基、醯基、醯氧基、醯胺基、 亞胺基、取代甲矽烷基、取代甲矽烷氧基、取代甲石夕烧硫 基、取代甲矽烷胺基、1價之雜環基、芳烯基、芳基乙炔 基或氰基。) Μ表示式(2)、式(3)或式(4)表示之基。 314723 6 1287570 [式中,y1及γ2分別獨立表示〇、s、c(=〇)、s(=〇)、 S〇2、C(R9)(Rl。)、Si(Ru)(Rl2)、n(r13)、B(R14)、p(Ri5) 或 P( = 〇)(R16)。 (式中 ’ R9、R1。、Rii、Ru、r13、r14、r15 以及 r16 分別獨立表不氫原子、齒素原子、烷基、烷氧基、烷硫基、 烷胺基、#基、芳氧基、芳硫基、芳胺基、芳烷基、芳基 烷氧基、芳基烷硫基、芳基烷胺基、醯基、醯氧基、醯胺 基、亞胺基、取代曱矽烷基、取代甲矽烷氧基、取代甲矽 烷硫基、取代甲矽烷胺基、丨價之雜環基、芳烯基、芳基 乙炔基或氰基。)但,γΐ為c(r9)(r1〇)、si(Rll)(Rl2)以外 時,Y1與γ2不會相同。] -γ3 = γ4_ (3) [式中,Υ3及Υ4分別獨立表示Ν、Β、Ρ、C(R17)或 Si(R18) 〇 (式中,R17及Ru分別獨立表示氫原子、鹵素原子、 烷基、烷氧基、烷硫基、烷胺基、芳基、芳氧基、芳硫基、 芳胺基、芳烷基、芳基烷氧基、芳基烷硫基、芳基烷胺基、 基、醯氧基、醯胺基、亞胺基、取代甲矽烷基、取代甲 石夕烧氧基、取代甲矽烷硫基、取代曱矽烷胺基、1價之雜 環基、芳烯基、芳基乙炔基或氰基。)] -Y5- (4) [式中 ’ Y5 表示 〇、s、c( = 0)、S( = 0)、S02、C(R19)(R20)、(1) A tetravalent aromatic hydrocarbon group or 4 [wherein, Ar丨 and Ar2 each independently represent a heterocyclic group of a valence. X1 and X2 represent either - c (, or c (ri) (r2) and the other is 〇, S, c (=0), s (= Q), sc > 2, Si (R3) (R4) , N(R5), from 6), P(R7) or p(=o)(r8). Wherein 'R丨, R2, R3, R4, R5, R6, R7mR4^ represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, Arylthio, arylamino, aralkyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, decyloxy, decylamino, imido, substituted methylation, Substituted for a decyloxy group, a substituted formazan thiol group, a substituted carbarylamino group, a monovalent heterocyclic group, an aralkenyl group, an arylethynyl group or a cyano group.) Μ represents a formula (2), a formula (3) Or the formula (4) represents the basis. 314723 6 1287570 [wherein, y1 and γ2 independently represent 〇, s, c(=〇), s(=〇), S〇2, C(R9)(Rl.), Si(Ru)(Rl2), n(r13), B(R14), p(Ri5) or P( = 〇)(R16). (wherein R9, R1, Rii, Ru, r13, r14, r15 and r16 each independently represent a hydrogen atom, a dentate atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, a #基基, Oxyl, arylthio, arylamino, aralkyl, arylalkoxy, arylalkylthio, arylalkylamino, decyl, decyloxy, decylamino, imido, substituted hydrazine a decyl group, a substituted methoxyalkyloxy group, a substituted carbaryl thio group, a substituted methantylamino group, a heterocyclic group of an anthracene group, an aralkenyl group, an arylethynyl group or a cyano group.) However, γ ΐ is c(r9) ( When r1〇) and si(Rll) (Rl2) are not, Y1 and γ2 are not the same. ] -γ3 = γ4_ (3) [wherein, Υ3 and Υ4 each independently represent Ν, Β, Ρ, C(R17) or Si(R18) 〇 (wherein, R17 and Ru independently represent a hydrogen atom, a halogen atom, Alkyl, alkoxy, alkylthio, alkylamino, aryl, aryloxy, arylthio, arylamino, aralkyl, arylalkoxy, arylalkylthio, arylalkylamine Base, benzyl, decyloxy, decylamino, imido, substituted, methoxyalkyl, substituted, methoxy, substituted, methyl thio, substituted decylamino, monovalent heterocyclic, aral , arylethynyl or cyano.)] -Y5- (4) [wherein Y5 represents 〇, s, c( = 0), S( = 0), S02, C(R19)(R20),

Sl(R2】)(R22)、N(R23)、b(r24)、p(R25)或 p( = 〇)(r26)。 7 314723 1287570 (式中,R19、R20、R21、R22、R23、r24、r25 以及 R26 分 別獨立表示氫原子、齒素原子、烧基、烧氧基、烧硫基、 烷胺基、芳基、芳氧基、芳硫基、芳胺基、芳烷基、芳基 烧氧基、方基烧硫基、方基烧胺基、酿基、酸氧基、酿胺 基、亞胺基、取代曱矽烷基、取代甲矽烷氧基、取代甲石夕 烷硫基、取代甲矽烷胺基、1價之雜環基、芳烯基、芳基 乙炔基或氰基。)]Sl(R2))(R22), N(R23), b(r24), p(R25) or p(= 〇)(r26). 7 314723 1287570 (wherein R19, R20, R21, R22, R23, r24, r25 and R26 each independently represent a hydrogen atom, a dentate atom, an alkyl group, an alkoxy group, a sulfur-burning group, an alkylamino group, an aryl group, Aryloxy, arylthio, arylamino, aralkyl, aryl alkoxy, arylsulfanyl, arylamino, aryl, acidoxy, arylamino, imine, substituted a decyl group, a substituted methoxyalkyloxy group, a substituted formazanylthio group, a substituted megrolylamino group, a monovalent heterocyclic group, an aralkenyl group, an arylethynyl group or a cyano group.]]

Zi表示-CR36 = CR37-或-Ce C-。R36及R37分別獨立表示 氫原子、烷基、芳基、1價之雜環基或氰基。d表示〇或 1 〇 ] [實施方式] 以下’就本發明之高分子化合物及使用該高分子化合 物之高分子發光元件加以詳細說明。 式(1)中’ Ar1及Ar2分別獨立表示4價之芳族烴基或 4價之雜環基。Ari及Ar2之雙方則以4價之芳族烴基者 為佳,雙方更以單環性之4價之芳族烴基者為更佳。 在此,4價之芳族烴基係指從苯環或稠環去除4個氫 原子後所剩的原子團之意,通常為碳數6至6〇,較佳為6 至20,可例示如下述之化合物。在此,在芳族烴基上可 具有取代基,而取代基可例示如:齒素原子、羥基、烷基、 烷氧基、烷硫基、烷胺基、芳基、芳氧基、芳硫基、芳胺 基、芳烷基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯 基、醯氧基、醯胺基、亞胺基、取代f矽烷基、取代曱矽 烷氧基、取代甲矽烷硫基、取代甲矽烷胺基、丨價之雜環 314723 8 1287570 基 中 、方烯基、芳基乙炔基或氰基。 ,不包含取代基之碳數。 、之方知烴基之碳數 元芳無座基可例示如下者。Zi means -CR36 = CR37- or -Ce C-. R36 and R37 each independently represent a hydrogen atom, an alkyl group, an aryl group, a monovalent heterocyclic group or a cyano group. d is 〇 or 1 〇 ] [Embodiment] Hereinafter, the polymer compound of the present invention and a polymer light-emitting device using the polymer compound will be described in detail. In the formula (1), 'Ar1 and Ar2 each independently represent a tetravalent aromatic hydrocarbon group or a tetravalent heterocyclic group. Both of Ari and Ar2 are preferably a tetravalent aromatic hydrocarbon group, and both of them are preferably a monocyclic tetravalent aromatic hydrocarbon group. Here, the tetravalent aromatic hydrocarbon group means the atomic group remaining after removing four hydrogen atoms from the benzene ring or the condensed ring, and is usually a carbon number of 6 to 6 Å, preferably 6 to 20, and can be exemplified as follows. Compound. Here, the substituent may be substituted on the aromatic hydrocarbon group, and the substituent may be exemplified by a porphin atom, a hydroxyl group, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, or an aromatic sulfur. Alkyl, arylamino, aralkyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, decyloxy, decylamino, imido, substituted f矽alkyl, substituted hydrazine a decyloxy group, a substituted methanyl thio group, a substituted carbaryl amino group, a fluorene heterocyclic ring 314723 8 1287570, a aryl group, an aryl ethynyl group or a cyano group. Does not contain the carbon number of the substituent. The carbon number of the hydrocarbon group can be exemplified as follows.

…二 環基係指從雜環化合物去除4個氮原」 後所剩下的原子團之意, 5 α ^ 双逍令為4至60,較佳為 至20。且在雜環基 % ^ ^ , 上』,、有/、方鉍烴基時之相同取代基 ’辰基之石反數中,不包含取代基之碳數。 314723 9 1287570The term "bicyclic group means the atomic group remaining after removing four nitrogen atoms from the heterocyclic compound", and the 5?^ double oxime is from 4 to 60, preferably to 20. Further, in the anti-number of the same substituent 'the base' of the heterocyclic group % ^ ^ , upper, and the fluorene hydrocarbon group, the carbon number of the substituent is not included. 314723 9 1287570

11 314723 128757011 314723 1287570

(2 2) 12 314723 1287570(2 2) 12 314723 1287570

(2 4) 祕加如如 )6:v ^c&gt;- )6c:&gt;- ^ 被姑, (2 5) 上述式中,ΪΤ分別獨立表示氫原子、鹵素原子、烷基、 烷氧基、烷硫基、烷胺基、芳基、芳氧基、芳硫基、芳胺 基、芳烷基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯 氧基、醯胺基、芳基烯基、芳基炔基、1價之雜環基或氰 314723 1287570 基。R’’分別獨立表示氫原子、烷基、芳基、芳烷基、取 代曱矽烷基、醯基、或1價之雜環基。 X1及Ar2以鍵結在Ar1之芳環碳之相鄰接位置,X2 及Ar 1以鍵結在Ar2之芳環碳之相鄰接位置者為佳。(2 4) 秘加如如)6:v ^c&gt;- )6c:&gt;- ^ 被, (2 5) In the above formula, ΪΤ independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group , alkylthio, alkylamino, aryl, aryloxy, arylthio, arylamino, aralkyl, arylalkoxy, arylalkylthio, arylalkylamino, decyloxy, Amidino, arylalkenyl, arylalkynyl, monovalent heterocyclic or cyanide 314723 1287570. R'' independently represents a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, a substituted indenyl group, a fluorenyl group, or a monovalent heterocyclic group. X1 and Ar2 are bonded to the adjacent positions of the aromatic ring carbon of Ar1, and X2 and Ar 1 are preferably bonded to the adjacent positions of the aromatic ring carbon of Ar2.

-X1- X2- 可 例示如下 列者 〇 〇 0 0 0 0 0 0 0 11 II II II II II II II 一C一 0一 ―έ 一S― ―C- -c- ―C-S— -C 一 费一 0 0 R3 I Ο f 0 R6 0 R7 0 0 II II _ 1. Π 1 Μ 1 η 丄 II II-X1- X2- can be exemplified as the following: 00 0 0 0 0 0 0 11 II II II II II II II 1 C 0 -1 έ 1 S - ―C- -c- ―CS— -C a 0 0 R3 I Ο f 0 R6 0 R7 0 0 II II _ 1. Π 1 Μ 1 η 丄 II II

II

IN R1_ o R1lc s 1R1C- one 1P——cIN R1_ o R1lc s 1R1C- one 1P——c

OHS 1R—6 —r8o=&lt;OHS 1R—6 —r8o=&lt;

3 _ R—£ I R1丨 C R7I- 2 丨Ri 6 RII 丨r2r1—c; 5 RI —r2r1—/3 _ R—£ I R1丨 C R7I- 2 丨Ri 6 RII 丨r2r1—c; 5 RI —r2r1—/

_no ONHn 2 1 j R RIC w -ΟΙ Ο一-π- r R2 R2 R8 其中以·· Ο_no ONHn 2 1 j R RIC w -ΟΙ Ο一-π- r R2 R2 R8 which is ···

II 一 C一 ο- ΟII 一 C一 ο- Ο

II •C 一 S— 0 0 II il •C一 C— R1II • C a S — 0 0 II il • C a C — R1

I -c—o— R1I -c-o- R1

I -c—s—I -c-s-

O R3 II •C 一 Si—O R3 II • C a Si —

O R5 -C-N-O R5 -C-N-

of -li-L R1 R3 •U- R2 R4 R1 R5i i 一 C—N—Of -li-L R1 R3 •U- R2 R4 R1 R5i i One C—N—

為佳 X】-X2-以 14 314723 1287570 ο -Ο 一— 或 R1For better X]-X2- to 14 314723 1287570 ο -Ο one - or R1

I —c — o — 為佳, 以 οI —c — o — is better, to ο

II —c— ο — 為更佳。 -Υ^γ2-可例示如下列者。 ]5 314723 1287570II —c— ο — is better. -Υ^γ2- can be exemplified as follows. ]5 314723 1287570

16 314723 128757016 314723 1287570

—N=B— —N=P- _N=C— •N=Si-—N=B— —N=P- _N=C— •N=Si-

R 18 一B=P— 一B=C一 &amp; B=Si— -P=C—R 18 - B = P - a B = C - & B = Si - - P = C -

R 18R 18

R 17 18 -P=Si—R 17 18 -P=Si—

R C=Si— R17 R18 其中,從化合物之安定性之觀點來看,則以 N=C— •B=C— —P=rC —R C=Si— R17 R18 wherein, from the viewpoint of the stability of the compound, N=C—•B=C—P=rC —

R t7R t7

•C=Si— R17 R1S 為佳 -Y5-可例示如下列者 17 314723 1287570 0 0 0• C=Si—R17 R1S is better -Y5- can be exemplified as the following 17 314723 1287570 0 0 0

Η II II Ο— —S— —C— —S— —8- ιι ΟΗ II II Ο - S - C - S - 8 - ιι Ο

為佳。 式(1)中,Μ為-YLY2-,而Υ1及Ar2以鍵結在Ar1之 芳環碳之相鄰接位置,Y2及Ar1鍵結在Ar2之芳環碳之相 鄰接位置為佳。 式(1)中,以Μ為- Y^Y2-,Y1及X2為C( = 0)為佳。 在-Y^Y2-及-X^X2-的組合上,-Υ^Υ2-及-Χ^Χ2-在反 複單元中,芳環之鄰位間相互結合以成為C2對稱基為佳, 以-Υ^Υ2-為 0It is better. In the formula (1), Μ is -YLY2-, and Υ1 and Ar2 are bonded to each other at the adjacent position of the aromatic ring carbon of Ar1, and Y2 and Ar1 are bonded to the adjacent position of the aromatic ring carbon of Ar2. In the formula (1), Μ is -Y^Y2-, and Y1 and X2 are preferably C(=0). In the combination of -Y^Y2- and -X^X2-, -Υ^Υ2- and -Χ^Χ2- in the repeating unit, the ortho positions of the aromatic ring are bonded to each other to become a C2 symmetric group, preferably - Υ^Υ2- is 0

II —0 —C- -χΐχ、為 Μ —C——〇—— 為佳。 本發明中高分子化合物所具有之可以式(1)表示的反 ]8 314723 1287570 烷基可任意為直鏈、支鏈或環狀均可,碳數通常為1 至20左右。具體可例示如:甲基、乙基、丙基、異丙基、 丁基、異丁基、第三丁基、戊基、己基、環己基、庚基、 辛基、2-乙基己基、壬基、癸基、3,7-二曱基辛基、月桂 基、三氟甲基、五氟乙基、全氟丁基、全氟己基、全氟辛 基等。 烷氧可任意為直鏈、支鏈或環狀均可,碳數通常為1 至20左右。具體可例示如:甲氧基、乙氧基、丙氧基、 異丙氧基、丁氧基、異丁氧基、第三丁氧基、戊氧基、己 氧基、環己氧基、戊氧基、辛氧基、2-乙基己氧基、壬氧 基、癸氧基、3,7-二甲基辛氧基、月桂氧基、三氟曱氧基、 五氟乙氧基、全氟丁氧基、全氟己氧基、全氟辛基、甲氧 基甲氧基、2-甲氧基乙氧基等。 烷硫基可任意為直鏈、支鏈或環狀均可,而碳數通常 為1至20左右。具體可例示如:曱硫基、乙硫基、丙硫 基、異丙硫基、丁硫基、異丁硫基、第三丁硫基、戊硫基、 己硫基、環己硫基、戊硫基、辛硫基、2-乙基己硫基、壬 硫基、癸硫基、3,7-二甲基辛硫基、月桂硫基、三氟甲硫 基等。 烷胺基可任意為直鏈、支鏈或環狀均可,可為單烷胺 基亦可為二烷胺基,而碳數通常為1至40左右。具體可 例示如:甲胺基、二曱胺基、乙胺基、二乙胺基、丙胺基、 二丙胺基、異丙胺基、二異丙胺基、丁胺基、異丁胺基、 第三丁胺基、戊胺基、己胺基、環己胺基、庚胺基、辛胺 20 314723 1287570 基、2-乙基己胺基、壬胺基、癸胺基、3,7_二曱基辛胺基、 月桂胺基 '環戊胺基 ' :環戊胺基、冑己胺基、:環4 基、吡咯烷基、哌啶基、雙三氟甲胺基等。 芳基可具有取代基,碳數通常為3至6〇左右。具體 可例示如:苯基、c^2烷氧苯基(Ci i2表示碳數為i至12。 以下亦同。)、Cl.12烧苯基、卜萘基、2_萘基、五氣笨基 等。 芳氧基在芳環上可具有取代基,而碳數通常為3至的 左右,具體可例示如:笨氧基、C112烷氧苯氧基、Cm2 烧苯氧基、1-萘氧基、萘氧基、五氟苯氧基等。 芳硫基在芳環上可具有取代基,而碳數通常為3至6〇 左右,具體可例示如··苯硫基、Cb12烷氧苯硫基、19 1-12 烧基苯硫基、1-奈硫基、2-萘硫基、五氟苯硫基等。 芳胺基在芳環上可具有取代基,而碳數通常為3至6〇 左右,具體可例示如:苯胺基、二苯胺基、Cl.12烷氧苯 胺基、二(C!·】2烧氧苯基)胺基、二(〇γΐ2苯胺基)胺基、卜 萘胺基、2_萘胺基、五氟苯胺基等。 芳垸基可具有取代基,而碳數通常為7至60左右, 具體可例示如:苯基-C】·〗2烷基、烷氧笨基_〇112烷 基、1_12烷苯基-Cl_12烷基、1-萘基-cv12烷基、2_萘基-CVi2 燒^基等。 芳基烷氧基可具有取代基,而碳數通常為7至60左 右’具體可例示如:苯基-Cb!2燒氧基、(^12垸氧苯基 燒氧基C^2烷苯基-c^2烷氧基、卜萘基-0^_12烷氧基、2 314723 21 1287570 萘基12烷氧基等。 芳基烷硫基可具有取體基,而碳數通常為7至6〇左 右,具體可例示如:苯基-C〗」2烷硫基、Cii2烷氧苯基丨丨丨2 烷硫基、C,-12烷苯基-Cm2烷硫基、卜萘基_。丨丨2烷硫基、 2_萘基-Cm2烷硫基等。 芳基烷胺基之碳數通常為7至60左右,具體可例示 如:苯基-CV12烧胺基、Cu跋氧苯基_〇112燒胺基、CM2 烷苯基-Cm2烷胺基、二(C^2烷氧苯基Τη〗烷基)胺基、 二(C!•丨2烷苯基-Cm2烷基)胺基、^萘基_Ci…烷胺基、2_ 奈基- C1-12烧胺基等。 酿基之碳數通常為2至20左右,具體可例示如:乙 醯基、丙醯基、丁醯基、異丁醯基、三甲基乙醯、苯醯基、 三氟乙醯基、五氟苯醯基等。 酉监氧基之碳數通常為2至20左右,具體可例示如: 乙氧基、丙醯氧基、丁醯氧基、異丁醯氧基、三甲基乙 醯氧基、苯醯氧基、三氟乙醯氧基、五氟苯醯氧基等。 醯胺基之碳數通常為2至20左右,具體可例示如: 曱醯胺基、乙醯胺基、丙醯胺基、丁醯胺基、苯甲醯胺基、 三氟乙醯胺基、五氟苯曱醯胺基、二甲醯胺基、二乙醯胺 基、二丙醯胺基、二丁醯胺基、二苯甲醯胺基、雙三氟乙 酿胺基、二-五氟苯甲醯胺基、琥珀醯亞胺基、酞醯亞胺 基等。 亞胺基之碳數通常為2至2 0左右,具體可例示如: 可以下列構造式表示的化合物。 22 314723 1287570II — 0 — C — — χΐχ, Μ — C — 〇 — is better. In the present invention, the polymer compound may have a trans group represented by the formula (1): 314723 1287570 The alkyl group may be any of a straight chain, a branched chain or a cyclic group, and the carbon number is usually from about 1 to about 20. Specific examples thereof include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, 2-ethylhexyl, Anthracenyl, fluorenyl, 3,7-didecyloctyl, lauryl, trifluoromethyl, pentafluoroethyl, perfluorobutyl, perfluorohexyl, perfluorooctyl, and the like. The alkoxy group may be any of a straight chain, a branched chain or a cyclic chain, and the carbon number is usually from about 1 to about 20. Specific examples thereof include a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, a butoxy group, an isobutoxy group, a third butoxy group, a pentyloxy group, a hexyloxy group, and a cyclohexyloxy group. Pentyloxy, octyloxy, 2-ethylhexyloxy, decyloxy, decyloxy, 3,7-dimethyloctyloxy, lauryloxy, trifluoromethoxy, pentafluoroethoxy , perfluorobutoxy, perfluorohexyloxy, perfluorooctyl, methoxymethoxy, 2-methoxyethoxy, and the like. The alkylthio group may be any of a straight chain, a branched chain or a cyclic chain, and the carbon number is usually from about 1 to about 20. Specific examples thereof include sulfoniumthio group, ethylthio group, propylthio group, isopropylthio group, butylthio group, isobutylthio group, tert-butylthio group, pentylthio group, hexylthio group, cyclohexylthio group, Butylthio, octylthio, 2-ethylhexylthio, sulfonylthio, sulfonylthio, 3,7-dimethyloctylthio, laurylthio, trifluoromethylthio and the like. The alkylamino group may be any of a straight chain, a branched chain or a cyclic group, and may be a monoalkylamino group or a dialkylamino group, and the carbon number is usually from about 1 to about 40. Specific examples thereof include a methylamino group, a diammonium group, an ethylamino group, a diethylamino group, a propylamino group, a dipropylamino group, an isopropylamine group, a diisopropylamino group, a butylamino group, an isobutylamino group, and a third. Butyryl, pentylamino, hexylamino, cyclohexylamino, heptylamino, octylamine 20 314723 1287570, 2-ethylhexylamino, decylamino, decylamino, 3,7-dioxin Alkylamino group, laurylamine 'cyclopentylamino': cyclopentylamino, decylamino, cyclohexyl, pyrrolidinyl, piperidinyl, bistrifluoromethylamino and the like. The aryl group may have a substituent and the carbon number is usually from about 3 to about 6 Torr. Specific examples thereof include a phenyl group and a c 2 alkoxyphenyl group (Ci i2 represents a carbon number of i to 12. The same applies hereinafter.), a phenyl group, a naphthyl group, a 2-naphthyl group, and a five-gas group. Wait. The aryloxy group may have a substituent on the aromatic ring, and the carbon number is usually about 3 to about, and specifically, for example, an anthraceneoxy group, a C112 alkoxyphenoxy group, a Cm2 phenoxy group, a 1-naphthyloxy group, Naphthyloxy, pentafluorophenoxy, and the like. The arylthio group may have a substituent on the aromatic ring, and the carbon number is usually from about 3 to about 6 Å, and specifically, for example, a phenylthio group, a Cb12 alkoxyphenylthio group, a 19 1-12 alkylphenylthio group, 1-nathio, 2-naphthylthio, pentafluorophenylthio and the like. The arylamine group may have a substituent on the aromatic ring, and the carbon number is usually about 3 to 6 Å, and specific examples thereof include an anilino group, a diphenylamino group, a Cl.12 alkoxyanilide group, and a di(C!·) 2 group. An oxygenated phenyl)amino group, a bis(〇γΐ2anilino)amino group, a naphthylamino group, a 2-naphthylamino group, a pentafluoroaniline group, or the like. The aryl fluorenyl group may have a substituent, and the carbon number is usually from about 7 to 60, and specifically, for example, a phenyl-C 】 2 alkyl group, an alkoxy phenyl group 〇 112 alkyl group, a 1 -12 alkyl phenyl group - Cl -12 An alkyl group, a 1-naphthyl-cv12 alkyl group, a 2-naphthyl-CVi2 group, and the like. The arylalkoxy group may have a substituent, and the carbon number is usually from about 7 to 60', and specific examples thereof include a phenyl-Cb! 2 alkoxy group, (^12 oxiranyloxyalkyloxy C 2 alkylbenzene) Alkyl-c^2 alkoxy, bhnaphthyl-O^-12 alkoxy, 2 314723 21 1287570 naphthyl 12 alkoxy, etc. The arylalkylthio group may have a body group and the carbon number is usually 7 to 6 〇. Specific examples thereof include phenyl-C "2 alkylthio group, Cii2 alkoxyphenyl hydrazine 2 alkylthio group, C, -12 alkylphenyl-Cm 2 alkylthio group, and naphthyl group. An alkylthio group, a 2-naphthyl-Cm 2 alkylthio group, etc. The carbon number of the arylalkylamine group is usually from about 7 to 60, and specifically, for example, a phenyl-CV12 acrylamine group or a Cu oxyphenylene group 〇 112 amine group, CM2 alkylphenyl-Cm2 alkylamino group, bis(C^2 alkoxyphenylphosphonium) alkyl group, bis(C!•丨2 alkylphenyl-Cm2 alkyl) amine group, ^Naphthyl-Ci...alkylamino group, 2-Nylidene-C1-12 acrylamine group, etc. The carbon number of the brewing group is usually from about 2 to 20, and specifically, for example, ethyl hydrazino group, propyl fluorenyl group, butyl fluorenyl group, and the like are exemplified. Butyl, trimethyl ethane, phenyl fluorenyl, trifluoroethyl fluorenyl, pentafluorophenyl fluorenyl, etc. Usually, it is about 2 to 20, and specifically, for example, an ethoxy group, a propenyloxy group, a butoxy group, an isobutyloxy group, a trimethylacetoxy group, a benzoquinoneoxy group, a trifluoroacetonitrile group. Base, pentafluorobenzoyloxy, etc. The carbon number of the guanamine group is usually from about 2 to 20, and specifically, for example, amidino group, acetamino group, acrylamide group, butylammonium group, and benzophenone Amidino, trifluoroacetamido, pentafluorophenylamine, dimethylamino, diethylamine, dipropylamine, dibutylammonium, benzoylamino, Bis-trifluoroethylamine, bis-pentafluorobenzamide, amber succinimide, quinone imine, etc. The carbon number of the imine group is usually from about 2 to about 20, and specifically, for example, A compound which can be represented by the following structural formula: 22 314723 1287570

取代甲石夕统基可例示如:二曱基甲石夕烧基、三乙基曱 石夕炫基、三正丙基曱石夕烧基、二異丙基曱石夕院基、第三丁 基甲石夕烧基二甲基甲石夕烧基、二笨基甲石夕烧基、三對二甲 苯基甲石夕烧基、三〒基甲石夕炫基、二苯基甲基甲石夕燒基、 第三丁基二苯基曱矽烷基、二甲基苯基甲矽烷基等。 取代甲石夕烧基可例示如:三曱基甲石夕烧氧基、三乙基 甲矽烷氧基、三正丙基甲矽烷氧基、三異丙基甲矽烷氧基、 第三丁基甲矽烷基二甲基甲矽烷氧基、三苯基甲矽烷氧 基、三對二甲苯基甲矽烷氧基、三苄基甲矽烷氧基、二苯 基甲基甲矽烷氧基、第三丁基二苯基曱矽烷氧基、二甲基 苯基甲矽烷氧基等。 取代甲矽烷硫基可例示如:三甲基曱矽烷硫基、三乙 基甲矽烷硫基、三正丙基曱矽烷硫基、三異丙基曱矽烷硫 基、第三丁基甲矽烷基二甲基甲矽烷硫基、三苯基甲矽烷 硫基、三對二甲苯基甲矽烷硫基、三〒基甲矽烷硫基、二 苯基甲基甲矽烷硫基、第三丁基二苯基甲矽烷硫基、二f 23 314723 1287570 基苯基曱矽烷硫基等。 取代曱矽烷胺基可例示如:三甲基甲石夕炫胺基、三乙 基曱矽烷胺基、三正丙基甲矽烷胺基、三異丙基甲矽烷胺 基、第三丁基曱矽烷基二甲基甲矽烷胺基、三苯基曱石夕烧 胺基、三對二甲苯基甲矽烷胺基、三T基甲石夕烧胺基、二 苯基曱基甲矽烷胺基、第三丁基二苯基曱矽炫胺基、三曱 苯基甲矽烷胺基、二(三甲基甲矽烷基)胺基、二(三乙基 甲矽烷基)胺基、二(三正丙基甲矽烷基)胺基、二(三異丙 基曱矽烷基)胺基、二(第三丁基曱矽烷基二甲基曱矽烷基) 胺基、二(三苯基曱矽烷基)胺基、二(三對二曱苯基曱矽 烷基)胺基、二(三苄基甲矽烷基)胺基、二(二苯基甲基甲 矽烷基)胺基、二(第三丁基二苯基曱矽烷基)胺基、二(二 甲笨基曱矽烷基)胺基等。 1元雜環基係指從雜環化合物去除1個氫原子後所剩 下的原子團之意,碳數通常為4至60左右,而具體可例 示如:噻嗯基、Cm烷基噻嗯基、吡咯基、呋喃基、吡 啶基、烷基吡啶基、咪唑基、吡唑基、: σ坐基、噻唾基、噻二哇基等。 φ π叹丞、三唑基、噚 此等基’可介由醚鍵 '硫醚 鍵、烷基、胺基、烯基、炔基等而與Arl或A〆鍵結 在芳烯基、芳乙炔基中之芳基可例示 相同者。 本發明之南分子化合物 示與上述之芳基之 複單元2種以上。 本發明之高分子化合物 可分別含有式(1)所 示的反 在不損害螢光特性 或電荷傳 314723 24 1287570 伸方基中含有具有苯環、縮合環者,獨立的苯環或縮 合環2個經直接或介由亞乙烯等基之鍵結合,常為碳數 6至60,以6至20為佳,可例示如··伸苯基(例如,下述 式(26))、奈二基(下述式(27))、伸蒽基(下述式(28))、聯 伸苯基(下述式(29))、二伸苯基(下述式(3〇))、縮合環化合 物基(下述式(3 1))等。在伸芳基上可具有取代基。取代基 可例示如:_素原子、烷基、烷氧基、烷硫基、烷胺基、 芳基、芳氧基、芳硫基、芳胺基、芳烷基、芳基烷氧基、 方基烧硫基、芳基烧胺基、酿基、S藍氧基、酸胺基、亞胺 基、甲矽烷基、甲矽烷氧基、甲矽烷硫基、1價之雜環基、 芳烯基、芳乙炔基或氰基,而伸芳基之碳數中,不包含取 代基之碳數。 (26)The substituted methadone group can be exemplified by: diterpene carbazide, triethyl fluorite, turmeric, tri-n-propyl fluorene, diisopropyl fluorite, and third Butyl methacrylate, dimethyl ketone, succinyl, succinyl, succinyl, trimethyl carbazide, triterpene, diphenylmethyl sulphate Anthracenyl group, tert-butyldiphenylalkylene group, dimethylphenylformamyl group, and the like. The substituted formazan group can be exemplified by: trimethyl sulfonyloxy, triethyl methoxyalkyloxy, tri-n-propylmethyl decyloxy, triisopropylmethyl decyloxy, and third butyl decane. Methyl dimethyl decyloxy, triphenyl methoxyalkyloxy, tri-p-xylylmethyl decyloxy, tribenzylmethyl decyloxy, diphenylmethyl methoxyalkyloxy, tert-butyl Phenyl nonyloxy, dimethylphenylformamoxy and the like. The substituted formylthio group may, for example, be a trimethyldecanethio group, a triethylmethylsulfanylthio group, a tri-n-propyldecylthio group, a triisopropyldecylthio group or a tert-butylmethylcarbonyl group. Methyl decylthio, triphenylmethanesulfanyl, tri-p-dimethylphenylmethanesulfanyl, trimethylsulfonylthio, diphenylmethylmethylsulfanyl, tert-butyldiphenyl A decylthio group, a dif 23 314723 1287570 phenyl phenyl sulfenyl group, and the like. The substituted decylamine group can be exemplified by, for example, trimethylmethyl sulphate, triethyl decylamino, tri-n-propylmethyl decylamino, triisopropylmethyl decylamino, and tert-butyl fluorene. a decyl dimethyl dimethyl decylamino group, a triphenyl sulfonium amine group, a tri-p-dimethylphenyl decylamino group, a tri-T-methyl carbaryl amine group, a diphenyl fluorenyl decylamino group, Tertiary butyl diphenyl decylamino group, triterpene phenyl carbamoylamino group, bis(trimethylmethyl decyl) amine group, bis(triethylmethyl decyl) amine group, two (three positive) Propylmethylalkyl)amine, bis(triisopropyldecyl)amino, bis(t-butyldecyldimethyldimethylalkyl)amine, bis(triphenyldecyl) Amino, bis(tri-p-nonylphenyl fluorenyl)amino, bis(tribenzylmethylindenyl)amine, bis(diphenylmethylformamidinyl)amine, bis(t-butyl Diphenylalkylalkyl)amine, bis(dimethylphenyl)alkylamine, and the like. The 1-membered heterocyclic group means the atomic group remaining after removing one hydrogen atom from the heterocyclic compound, and the carbon number is usually from about 4 to 60, and specifically, for example, a thiol group or a Cm alkyl thiol group. , pyrrolyl, furyl, pyridyl, alkylpyridyl, imidazolyl, pyrazolyl, σ sylylene, thiosaltyl, thiadiazide and the like. φ π 丞, triazolyl, 噚, etc. can be bonded to Arl or A by means of an ether bond, a thioether bond, an alkyl group, an amine group, an alkenyl group, an alkynyl group or the like. The aryl group in the ethynyl group can be exemplified by the same. The south molecular compound of the present invention has two or more kinds of complex units with the above aryl group. The polymer compound of the present invention may contain an inverse fluorination-free property or a charge-transfer 314723 24 1287570 excipient group having a benzene ring, a condensed ring, an independent benzene ring or a condensed ring 2 as shown in the formula (1). The bond is bonded directly or via a bond such as a vinylidene group, and is usually a carbon number of 6 to 60, preferably 6 to 20, and is exemplified by a phenyl group (for example, the following formula (26)), Naiji Base (the following formula (27)), a thiol group (the following formula (28)), a stretched phenyl group (the following formula (29)), a diphenyl group (the following formula (3)), condensation A cyclic compound group (the following formula (3 1)) or the like. There may be a substituent on the extended aryl group. The substituent may, for example, be a hydrazine atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamino group, an aralkyl group or an arylalkoxy group. Sulfate, aryl, amine, s, s, s, s, s, s, s, s, s, s, s, s, s, s, s, s, s, s, s, s, s An alkenyl group, an arylethynyl group or a cyano group, and the carbon number of the extended aryl group does not include the carbon number of the substituent. (26)

(2 7) 26 314723 1287570(2 7) 26 314723 1287570

(2 8) ~O^- ~o~^ ~o ~^ b^-q ^-p (2 9)(2 8) ~O^- ~o~^ ~o ~^ b^-q ^-p (2 9)

本發明中,2價之雜環基係指從雜環化合物去除2個 氫原子後之所剩下的原子團之意,而碳數通常為4至60, 27 314723 !287570 以4至20 之碳數中 而雜環基 為佳。又,雜環基上可具有取代基, 則不包含取代基之碳數。 之中错 哀化5物係指在具有環狀構造的有機化合物 ’構成環的元素不僅含碳,而在環内 氮、磷、蝴、石夕、砸等雜原子者之意。 “、 2 ^貝之雜環基可例示如下列者。 、,、、含虱的2價雜環基之雜原子;可例示如:吡啶二基(下 述式(32))、二氮雜伸苯基(下述式(33》、喹啉二基(下述式 (34))、喹喔啉二基(下述式(35))、吖啶二基(下述式(36))^ 聯二吡啶二基(下述式(37))、菲繞啉二基(下述式(38))等。 含矽、氮、氧、硫、硒等雜原子並具有芴構造的基(下 述式(39))。 含矽、氮、氧、硫、硒等雜原子的5員環雜環基可例 示如:(下述式(40))。 含矽、氮、氧、硫、碼等雜原子的5員環縮合雜環基 可例示如:(下述式(41))、笨并噻二唑-4,7_二基基或苯并 口萼二β坐-4,7 -二基基等。 含硫等雜原子的5員環雜環基且在其雜原子之^位鍵 結並成為二聚物或低聚物之基,可例示如:(下述式(42))。 含矽、氮、氧、硫、砸等雜原子的5員環雜環基且在 其雜原子之α位與苯基結合的基:可例示(下述式(43))。 (3 2) 28 314723 1287570 (3 3) δτ ^ 0 8 ^ . (3 4)In the present invention, the divalent heterocyclic group means the meaning of the remaining atomic group after removing two hydrogen atoms from the heterocyclic compound, and the carbon number is usually from 4 to 60, 27 314723 !287570 to 4 to 20 carbon Among them, a heterocyclic group is preferred. Further, the heterocyclic group may have a substituent, and the carbon number of the substituent is not included. In the case of an organic compound having a cyclic structure, the element constituting the ring contains not only carbon but also a hetero atom such as nitrogen, phosphorus, butterfly, orthodontic or anthracene in the ring. The heterocyclic group of 2 Å can be exemplified by the following: a hetero atom of a fluorene-containing divalent heterocyclic group; for example, a pyridinediyl group (the following formula (32)), a diaza A phenyl group (the following formula (33), a quinolinediyl group (the following formula (34)), a quinoxalinediyl group (the following formula (35)), and an acridinediyl group (the following formula (36)) ^bibipyridinediyl (the following formula (37)), phenanthrolinediyl (the following formula (38)), etc. A group containing a hetero atom such as ruthenium, nitrogen, oxygen, sulfur, or selenium and having a ruthenium structure ( The following formula (39)): The 5-membered ring heterocyclic group containing a hetero atom such as hydrazine, nitrogen, oxygen, sulfur or selenium can be exemplified by the following formula (40): hydrazine, nitrogen, oxygen, sulfur, The 5-membered ring condensed heterocyclic group of a hetero atom such as a code can be exemplified by: (the following formula (41)), stupid thiadiazole-4,7-diyl or benzophenanthridine β-spin-4,7- A dibasic ring heterocyclic group containing a hetero atom such as sulfur and bonded at the position of the hetero atom to form a dimer or oligomer, and is exemplified as: (Expression (42) below) a 5-membered heterocyclic group containing a hetero atom such as a hydrazine, a nitrogen, an oxygen, a sulfur or a hydrazine, and a group bonded to a phenyl group at the alpha position of the hetero atom: It can be exemplified (the following formula (43)). (3 2) 28 314723 1287570 (3 3) δτ ^ 0 8 ^ . (3 4)

(3 6) 29 314723 1287570 (3 7)(3 6) 29 314723 1287570 (3 7)

(4 0) 30 314723 1287570(4 0) 30 314723 1287570

於ja:-In ja:-

(4 1)(4 1)

^S!r ^ (4 2)^S!r ^ (4 2)

(43) 式中,R’分別獨立表示氫原子、鹵素原子、烷基、烷 氧基、烷硫基、烷胺基、芳基、芳氧基、芳硫基、芳胺基、 芳烧基乡基烧氧基、芳I烧硫基、芳基燒胺基、釀氧基、 醯胺基、芳烯基、芳快基、i價之雜環基或氰基。R”分別 獨立表不虱原?、烷基、芳基、芳烷基、取代甲矽烷基、 酸基、或1價之雜環基。 314723 3】 1287570 再者,2價之雜環基亦可包含如:三重項發光配位化 合物等,可例示:例如下列所例示的2價之金屬配位化合 基。(43) wherein R' independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamine group, or an aryl group. An alkoxy group, an aryl I thiol group, an arylamine group, a methoxy group, a decyl group, an aralkenyl group, an aryl group, an i-valent heterocyclic group or a cyano group. R" independently represents an alkyl group, an aryl group, an aralkyl group, a substituted formyl group, an acid group, or a monovalent heterocyclic group. 314723 3] 1287570 Furthermore, a divalent heterocyclic group is also For example, a trivalent luminescent complex compound or the like may be contained, and examples thereof include a divalent metal complex compound exemplified below.

314723 1287570314723 1287570

本發明之高分子化合物能含除了(1)以外之反複單元 而在發光效率方面較佳者,可舉如:下述式(7)表示的反 ^ 〇〇* 一 稷早兀。 33 314723 128757〇 ⑺ -Ar4 + N〜Ar5 + r33 式中,Ar4及Ar5係分別獨立 而Ar4也 s $伸芳基或2價雜環基, 八&quot;與Ar5可互相鍵結以形成與 芳基、^ %。又,R33表示烷基、The polymer compound of the present invention can contain a repeating unit other than the above (1), and is preferable in terms of luminous efficiency, and may be an anti- ^* 一稷稷 shown by the following formula (7). 33 314723 128757〇(7) -Ar4 + N~Ar5 + r33 wherein Ar4 and Ar5 are independent and Ar4 is also s aryl or divalent heterocyclic, and argon can be bonded to each other to form Base, ^ %. Also, R33 represents an alkyl group,

1價之雜環基、可以下述彳 I 迷式(9)所二的其 ^ (8)所示的基、或可以下 J所不的基。g為1至4之敕數 ⑻ Λ … 式中,Ar6為伸芳基或2價之私 子、浐a ^ ^ 、之錶環基。R34表示氫原 70基、方基、1價之雜環基、 京 其。或可以下述式(9)所; 土 Z3 表示-CR40 = CR41-或-Cs「 斤 、。R4G 及 R41 分別獨 _ir ' 不虱原子、烷基、芳基、u J獨立与 2之整數。 之心基或氰基。U 0jThe monovalent heterocyclic group may be a group represented by the following formula (9), or a group represented by the formula (9). g is a number of 1 to 4 (8) Λ ... wherein Ar6 is an exoaryl or a divalent privilege, 浐a ^ ^, which is a ring group. R34 represents a hydrogen atom 70 group, a square group, a monovalent heterocyclic group, and ginseng. Or may be represented by the following formula (9); soil Z3 represents -CR40 = CR41- or -Cs "jin, R4G and R41 are respectively independent ir" atom, alkyl, aryl, u J independent and 2 integer Heart base or cyano group. U 0j

Ar7Ar7

NN

Ar8 R42 (9) R43 式中’ Ar及Ar8将分为I您*Ar8 R42 (9) R43 where 'Ar and Ar8 will be divided into I*

^ 42 係刀別獨立的伸芳基或2價之雜JS 基。R表不氫原子、烷基、芳美^ 4,士— ^ 方I或1價之雜環基。又 R ^表示烷基、芳基或丨價 ’ 1貝〈_ %基。i為1至4之餐 可以通式(7)所干的g w — 楚數 下θ者。又,# π '、、後早兀之較佳具體例可例示如 下圖者在笨環上或雜環基上可具有取代基。 314723 34 1287570^ 42 The knife is independent of the aryl or the divalent JS base. R represents a hydrogen atom, an alkyl group, a aryl group, a tetra- or a monovalent heterocyclic group. Further, R ^ represents an alkyl group, an aryl group or a valence of '1 Å < _ % group. i is a meal of 1 to 4. The g w of the formula (7) can be dried. Further, a preferred specific example of #π', and the latter may be exemplified as follows, and the substituent may have a substituent on the acyclic ring or the heterocyclic group. 314723 34 1287570

本發明之高分子化合物之數平均分子量以聚苯乙烯換 35 314723 1287570 外為10至l〇8。反複構造之總數,雖因反複構造或其比 例會有所不同,惟從成膜性之觀點來看,一般反複構造之 總數以5至10000為佳,以10至10000為更佳,又以20 至50000為最佳。 本發明之高分子化合物,可為無規共聚物、嵌段共聚 物或接枝共聚物,亦可為具有此等之中間構造的高分子, 例ί帶有嵌段性的無規共聚物。為製得螢光之量子產率高 的鬲分子化合物的觀點來看,帶 Τ有肷段性的無規共聚物或 者嵌段或接枝共聚物較完全的盔 yV …規共聚物為佳。主鍵上有 为枝而末端部有3個以上的情报十此^ 女^ 〇 们價形或樹枝狀聚物(dendrimer) 亦包含在内。 ; 本發明之高分子化合物所含 軛之單元所連結,或在反複單 =’可為被非共 連結反複單元的構造之例示如: —^、軛#彳刀。 下列所不者,下别邮—&amp; 與伸乙稀基組合者,以及下 下列所不者 .—L 所不者為中組合2個以卜 者。在此,R係氫原子、碳數 乂上 60之芳基以及選自碳數4至 厌6至 其,而A本-山♦ 6〇之雜環基而成的群中之 基,而Ar表不石反數6至6〇之烴美。 T之 314723 36 1287570The number average molecular weight of the polymer compound of the present invention is 10 to 10 8 in terms of polystyrene for 35 314723 1287570. The total number of repeated constructions may vary from one to another, from the viewpoint of film formation, and the total number of repeated structures is preferably from 5 to 10,000, preferably from 10 to 10,000, and from 20 to 10,000. Up to 50000 is the best. The polymer compound of the present invention may be a random copolymer, a block copolymer or a graft copolymer, or a polymer having such an intermediate structure, and a block random copolymer. In order to obtain a fluorene molecular compound having a high quantum yield of fluorescence, a random copolymer having a ruthenium or a relatively complete y? copolymer of a block or graft copolymer is preferred. There are more than three pieces of information on the main key for the branch and the end part is the same. Female 〇 〇 Our shape or dendrimer is also included. The unit of the yoke of the polymer compound of the present invention is connected to the unit of the yoke, or the structure of the repeating unit = ' can be a non-co-connected repeating unit, for example: -^, yoke #彳刀. If you don't do the following, you will be given a postal combination with the singularity of the squad, and the following ones. Here, the R-based hydrogen atom, the aryl group of 60 on the carbon number, and the group selected from the group consisting of carbon number 4 to ana 6 to the heterocyclic group of A-Ben 〇 6〇, and Ar The table is not the inverse of the hydrocarbons of 6 to 6 石. T 314723 36 1287570

本發明之高分子化合物之末 留下眭 B, /、來合活性基本身殘 之故’二則由於作成元件時之發光特性或耐用壽命會降低 造連病ΓΓ安定的基加以保護。以具有與主鏈之共輛構 4::鍵結者為佳,可例示如:介由碳-碳鍵結而 ,、方基或雜環基鍵結的構造。 :’由於利用來自薄膜的發光,本發明之高分子化合 物以使用固體狀態而具有螢光者為佳。 對本發明之高分子化合物之優良溶媒,可例示如:氣 仿一氯甲烷、二氣乙烷、四氫呋喃、甲笨、二甲苯、13 5-二曱基苯、四氫化萘、十氫萘胺、正丁基苯等。雖因高分 子化合物之構造或分子量而有所不同,惟通常可在此等溶 媒中溶解0 · 1重量〇/〇以上者。 其-人’就本發明之高分子化合物之製造方法加以說 明。 本發明之高分子化合物可將下述式(丨〇)所示的化合物 37 314723 1287570 即可製造 作為原料之一種並加以稠聚合 X1. X2 D1—-Ar1At the end of the polymer compound of the present invention, 眭 B, /, the activity of the combination is substantially ruined. Second, the luminescent property or the durable life of the component is lowered to protect the stability of the disease. It is preferable to have a bond with the main chain of the main chain 4::, for example, a structure in which a bond is bonded via a carbon-carbon bond, a square group or a heterocyclic group. : 'Because the light emission from the film is utilized, it is preferred that the polymer compound of the present invention has a fluorescent state in a solid state. The excellent solvent of the polymer compound of the present invention may, for example, be: methylene chloride, dioxane, tetrahydrofuran, methyl bromide, xylene, 13 5-dimercaptobenzene, tetrahydronaphthalene or decalin, n-Butylbenzene and the like. Although it differs depending on the structure or molecular weight of the high molecular compound, it is usually possible to dissolve 0. 1 weight 〇/〇 or more in these solvents. The method of producing the polymer compound of the present invention will be described. The polymer compound of the present invention can be produced by using a compound represented by the following formula (丨〇) 37 314723 1287570 as a raw material and condensed and polymerized X1. X2 D1--Ar1

At2. -D2 (10) Μ (式中,Ar1、Ar2、χΐ、 .n2 v X以及M係與式(1)相同。D1 及D分別獨立表示_素原子、^ 趟其 ^ 烷基磺酸鹽基、芳基磺酸 石 硼酸酯基、鎏甲基、鱗曱基、 只酉夂疏基甲基、單齒化甲其 甲基、硼酸基、甲醯基、氰甲基或 己歸基。) 在此,烧基確酸鹽某可仏丨― * 土 例不如:甲烷磺酸鹽基、乙烷 磺酸鹽基、三氟甲烷磺酸鹽基—立 一 — 寺方基續S义鹽基可例不如: 苯磺酸鹽基、對曱苯碏酸鹽其 ^ ^ ^ 一 — ’、 土等,芳基烧基磺酸鹽基可例 示如:T基磺酸鹽基等。 硼酸酯基可例示如下述式所示的基。 OMe OEt 一&lt; —B、 OMe OEtAt2. -D2 (10) Μ (wherein, Ar1, Ar2, χΐ, .n2 v X and M are the same as formula (1). D1 and D respectively represent _ 素 atom, ^ 趟 ^ ^ alkyl sulfonic acid Salt, aryl sulfonate borate, fluorenylmethyl, fluorenyl, sulfhydryl methyl, monodentate methyl, boric acid, formazan, cyanomethyl or Base.) Here, the base is a certain sputum - * The soil is not as good as: methane sulfonate, ethane sulfonate, trifluoromethanesulfonate - Liyi - Sifangji continued S The salt base is not particularly limited as follows: a benzenesulfonate group, a p-benzoate, a ^^^--, a soil, etc., and an arylalkylsulfonate group can be exemplified by a T-sulfonate group or the like. The borate group can be exemplified by a group represented by the following formula. OMe OEt a &lt; —B, OMe OEt

鎏甲基可例不如:下述式所示的基。… CH2SPh2X (式中,x表示鹵素原子。) 鎮甲基可例示如:下述式所示的基。The hydrazine methyl group is not as good as the group represented by the following formula. CH2SPh2X (wherein x represents a halogen atom.) The town methyl group is exemplified by a group represented by the following formula.

-CH2PphsX (式中,X表示鹵素原子。) 314723 38 1287570 石黃酸鹽甲基可例示如:下述式所示的基。 -CH2PO(OR,,,)2 (式中,R&quot;’表示烷基、芳基或芳燒基。) 單鹵化曱基可例示如:氟曱基、氯甲基、溴甲基、碘 曱基。 縮合聚合之方法在主鏈上具有伸乙烯基的情形,視需 要使用其他單體而可例示如:藉由具有醛基的化合物 與具有鎮鹽基的化合物間之維持(Wittig)反應的聚合,[2] 藉由具有酸基及鱗鹽基的化合物之維持反應的聚合, 藉由具有乙稀基的化合物與具有_素原子的化合物間之駭 克(Heck)反應的聚合’ [4]藉由具有乙烯基及_素原子的 化合物之駭克反應的聚合,[5]藉由具有醛基的化合物盥 炫基膦酸鹽基的化合物間之歐納.俄士歐斯.埃蒙 (H〇rner-WadsW〇rth-Emmons)法的聚合,[6]藉由具豕有媒基 及烧基膦酸鹽基的化合物之歐納.俄士歐斯蒙法的I 合,m藉由具有函化甲基2個以上的化合物之去幽化氫 法:聚縮合,剛由具有鎏鹽基2個以上的化合物之鎏 鹽分解法的聚縮合,[9]藉由具有醛基的化合物血呈有乙 ,基==間之克内費納格爾π——)反應、的聚 二=方Γ基及乙腈基的化合物之克内費納格爾 反應的♦合寻方法,「11*1葬由目 之夫㈣⑽Μ 個以切基的化合物 之麥克姆來(McMurry)反應的聚合等方法 就上述⑴至[11]之聚合,依μ示如°下。 314723 39 1287570 ⑴ 0HC-Ar一CH0 + X: Ph3P+H2C—Ar*-CH2P+Ph3 χ- 驗 / -^ —[—Ar-----------------------Ar1, 〔2〕 OHC——Ar——CH2P+Ph3 X*-CH2PphsX (wherein, X represents a halogen atom.) 314723 38 1287570 The rhein methyl group can be exemplified by a group represented by the following formula. -CH2PO(OR,,,) 2 (wherein R&quot;' represents an alkyl group, an aryl group or an aryl group.) The monohalogenated fluorenyl group can be exemplified by a fluoromethyl group, a chloromethyl group, a bromomethyl group or an iodonium group. base. The method of condensation polymerization has a vinyl group in the main chain, and other monomers may be used as needed, for example, a polymerization by a Wittig reaction between a compound having an aldehyde group and a compound having a sulphate group. [2] Polymerization by a reaction of a compound having an acid group and a squara base group, by a polymerization of a Heck reaction between a compound having an ethyl group and a compound having a γ atom [4] Polymerization by a gram reaction of a compound having a vinyl group and a sulfonium atom, [5] by a compound having an aldehyde group, a compound of a fluorenylphosphonate group, Ouna. Öss. Polymerization of the 〇rner-WadsW〇rth-Emmons) method, [6] by the combination of the enamel-Russian method of a compound having a sulfonate group and a pyridylphosphonate group, m A de-massing hydrogen method of two or more compounds of a functionalized methyl group: polycondensation, polycondensation of a sulfonium salt decomposition method of a compound having two or more sulfonium groups, [9] by blood of a compound having an aldehyde group There is a combination of B, Fen, and acetonitrile. ♦ The method of finding the gram of the Fenergael reaction of the substance, “11*1 burial from the eye (4) (10) 聚合 a method of polymerization of the McMurry reaction of the compound of the cleavage, etc. (1) to [11] The polymerization is shown as follows: 314723 39 1287570 (1) 0HC-Ar-CH0 + X: Ph3P+H2C-Ar*-CH2P+Ph3 χ-test / -^ —[—Ar-------- ---------------Ar1, 〔2〕 OHC——Ar——CH2P+Ph3 X*

Ar-:Ar-:

〔3〕 驗 /[3] Test /

Ar-—....... + Br一Ar'-Br-► —hAr 纪觸媒 \Ar-—....... + Br-Ar'-Br-► —hAr

Ar·Ar·

⑷ Br-Ar 鹼 -!鈀觸媒(4) Br-Ar base -! Palladium catalyst

Ar-- n 〔5〕 40 314723 1287570 OHC-Ar-CHO + (R0)2(0)PH2C—Ar· CH2P(0)(0R)2 fAr :-Ar'Ar-- n 〔5〕 40 314723 1287570 OHC-Ar-CHO + (R0)2(0)PH2C—Ar· CH2P(0)(0R)2 fAr :-Ar'

n 〔6〕 OHC-Ar-CH2P(〇)(〇R)2n 〔6〕 OHC-Ar-CH2P(〇)(〇R)2

nn

〔9〕 OHC-Ar-CHO + MCCH2—Ar'· -ch2cn 驗 十r_[9] OHC-Ar-CHO + MCCH2—Ar'· -ch2cn test ten r_

〔10〕 驗 OHC——Ar—CH2CN -[10] Inspection OHC - Ar-CH2CN -

n 41 314723 〔11〕 1287570 〇hc〜a卜 CH0 —_ 又,本發明之高分子化合物之製造方法,其主鏈上不具有 伸乙烯基的情形,可例示如:[12]藉由鈴木(Suzuki)偶合 反應而進行聚合的方法,[13]藉由格利雅(Grignard)反應 而進行聚合的方法,[14]藉由Ni(〇)(鎳氧化物)觸媒而進 行聚合的方法,[15]藉由FeCl3(氣化鐵)等之氧化劑而進 方法、電氣化學式的氧化聚合的方法,或 由具有適當的脫離基的中間物高分子之分解的方法 就上述[12]至[16]止之聚合法,依式表示如下。 〔12〕 °n 41 314723 [11] 1287570 〇hc~a卜CH0 —_ Further, in the method for producing a polymer compound of the present invention, the case where the vinyl group does not have a vinyl group in the main chain can be exemplified by [12] by Suzuki ( Suzuki) a method of conducting polymerization by coupling reaction, [13] a method of performing polymerization by a Grignard reaction, [14] a method of polymerizing by a Ni(〇)(nickel oxide) catalyst, [ 15] A method of oxidizing polymerization by means of an oxidizing agent such as FeCl3 (evaporized iron), an oxidative polymerization method of an electrochemical type, or a method of decomposing an intermediate polymer having an appropriate leaving group, [12] to [16] The polymerization method is as follows. [12] °

Br-Br-

Ar—Br (RO)2B—Ar'—— B(OR)2 R為氫原子,烷基 觸媒 驗Ar-Br (RO)2B-Ar'——B(OR)2 R is a hydrogen atom, alkyl catalyst test

〔13〕 鎳觸媒[13] Nickel catalyst

Br--Ar—MgBr 〔14〕 〔15〕Br--Ar-MgBr [14] [15]

RR

Y 為 S,NHY is S, NH

Br-Ar-BrBr-Ar-Br

氧化聚合Oxidative polymerization

n 3]4723 42 〔16〕 1287570n 3]4723 42 [16] 1287570

ROCO 〇CORROCO 〇COR

熱分解Thermal decomposition

R 此中,由於容易進行構造控制之故,較佳為藉由 反應的聚合、藉由駭克反應的聚合、藉由歐納·俄士歐斯、 埃蒙法的聚合、藉由克内費納格爾反應的聚合以及藉由^ 木偶合反應而進行聚合的方法、藉由格利維反應而二: 合:方法、藉由Ni(0)觸媒進行聚合的方法。再者,從斥-取得及聚合反應操作之方便性來看,較佳為藉由鈴 ^“反應:進行聚合的方法、藉由格利維反應而進行聚 。的方法、藉由Ni(〇)觸媒而進行聚合的方法。 如將本發明之高分子化合物作為高分子咖之 枓使用時’由於其純度會對發光特性產^ 二;明之製造方法中,則以充份實施上述分離操作,‘ 呆=以±充份去除未反應單體、副生成物、觸媒殘渣等。 4 %:抵要是能充份去除所殘留的溶媒的條件即 遮光而二止高T子化合物之變質起見’以能在惰性氣體中 “ 進行乾燥者為佳。,古 熱而變質的溫度下進行乾燥者為佳Γ刀子化合物不致於因 用。η明之高分子化合物可作為發光材料之有效成份使 光學 亦:作為電荷傳輸性材料、有機半導體材料、 ’或糟由摻f(dGping)而作為導電性材料使用。 子化八物:中八有/夜晶性的高分子化合物,係指含有高分 分子顯示液晶相之意。液晶相,係可藉由偏光 314723 43 1287570 頦u鏡以及差示掃瞄熱量測定、χ光繞射測定等加以確 認0 具有液晶性的化合物,已知有由於使其定向即可具有 光予丨生或包氣性的各向異性。(合成金屬(SyntheticR, because of the ease of structural control, it is preferred to carry out polymerization by reaction, polymerization by gram reaction, polymerization by Ona-Russian, Emmon method, by Kneif The polymerization of the Nagel reaction and the method of carrying out the polymerization by the coupling reaction, and the method of polymerizing by the Ni(0) catalyst by the Grignard reaction. Further, from the viewpoints of the convenience of the repulsion-acquisition and the polymerization reaction, it is preferred to carry out the polymerization by a method of "reaction: polymerization, and polymerization by a Grignard reaction, by Ni (〇 a method of performing polymerization by using a catalyst. When the polymer compound of the present invention is used as a polymer, it is produced by the purity of the polymer compound, and the above-mentioned separation operation is carried out in a sufficient manner. , ' Staying = Fully remove unreacted monomers, by-products, catalyst residues, etc. 4 %: The conditions are sufficient to remove the remaining solvent, that is, the shading and the high T-substrate deterioration See 'to dry in an inert gas' is preferred. The drying of the ancient heat and the deterioration of the temperature is not a good result. The polymer compound of η Ming can be used as an active component of a light-emitting material to be used as a charge transporting material, an organic semiconductor material, or as a conductive material by f (dGping). The eight substances: the medium-eight-night/night-crystalline polymer compound means that the high-molecular molecule exhibits a liquid crystal phase. The liquid crystal phase can be confirmed by polarized light 314723 43 1287570 颏u mirror, differential scanning calorimetry, calender diffraction measurement, etc., and compounds having liquid crystallinity are known. Raw or aerated anisotropy. (Synthetic metal (Synthetic

Metals)U9 期,(2001 年)537 頁) 一使其定向的作法而言,可採用:一般周知為作為液晶 之定向作法者,例如「液晶之基礎與應用」(松本正一、 角田市良共著’工業調查會出版,1991年)第5章,「強 介電性液晶之構造及物性」(福田敦夫、竹添秀男丘著, 哥羅那社出版,1990年)第7章,「液晶」第3卷第/張(1999 年)3至16頁等所記載之方法。其中擦拭法、光定向法、 切變應力施加法或提升塗佈法在料定向作法上簡便有用 且容易利用。 t拭法’係使用布等將基板表面輕輕擦拭的方法。可 使用玻璃或高分子薄膜之基板,擦拭基板用的彳,可使用 紗布或聚醋、棉布、尼龍、嫘紫等布。又,如在基板上另 外形成定向膜,即可更接古— • P』更挺同疋向性能。在此,定向膜可舉 如·聚醯亞胺、聚醯胺、 r VA(承乙烯醇)、聚酯、尼龍等, 而市售之液晶用定向膜亦可/由田 ^ 、了使用。疋向膜可依旋塗法、柔 版印刷尊形成,擦拭所用的布, ’ 」配口疋向膜之情況適當 選擇。 UW砂Γ Γ法係扣在基板上形成定向膜,並藉由將偏光 “外線)光照射或斜入射照射uv光的方法而使I且有 定向功能的方法。定向膜可舉如:聚酿亞&quot;醯胺、聚 314723 44 1287570 乙烯肉桂酸酯,而市售之液晶用定向膜亦可使用。 在擦拭法或光定向法中,在經實施上述所記裁之處理 的基板間夹介有經定向的高分子材料,即可使其定向。此 時,必須將基板作成材料達到液晶相或各向等相n 溫度設定之實施,可在將高分子材料央介在基板之前; 後。又,僅將該高分子材料塗佈在經實施定向處理的基板 上即可。高分子之塗佈,係可依將高分子载置在基板上並 设定為Tg(玻璃化溫度)以上或能顯示液晶相或各向等相 的溫度Μ吏用輕子(rod)等往一方向塗佈,或調製經溶解 在有機溶媒的溶液,而可依旋塗法或柔版印刷法等實施。 切變應力施加法,係指在經載置在基板上的高分子材 枓上載置其他基板’在能成為液晶相或各向等相的溫度下 使基餘—方向挪移的方法。此時,基板,如使用經實施 Γΐί:拭法或光定向法中所記載的定向處理的基板,即 y衣传疋向度更高者。基板可使用玻璃或高分子薄膜亦 可作f由應力所挪移者非為基板而為金屬製之輥子。 提升k佈法’係指將基板浸潰在高分子溶液中後,再 來的作法。用為高分子溶液的有機溶液,或基板之提 整^度並不特別限定’而可配合高分子之定向度選擇並調 材料^將本發明之高分子化合物作為高分子LED之發光 达使用a夺’為使其純度能對發光特性產生影響起見,較 1土為將取人^ 法 ^ B W之早體藉由蒸餾、昇華精製、再結晶等之方 、‘衣後再進行聚合,又,較佳為合成後進行依再沈 45 314723 1287570 澱精製、色譜法的分離等之純化處理。 &gt;、 由於利用來自薄膜之發光或磷光之故,本發明之 问刀子化合物較佳為使用在固體狀態下具有螢光或磷光 者。 對^發明之高分子化合物的優良溶媒可例示如:氯 仿一氣甲烷、二氯乙烷、四氫呋喃、甲苯、二甲苯、 一甲基本、四氫化萘、十氫萘胺、正丁基苯等。雖因高分 子化口物之構造或分子量而有所不同,惟通常可在此等溶 媒中溶解0 · 1重量%以上。 接著,就本發明之高分子LED加以說明。 本赉明之尚分子led之特徵為:在由陽極及陰極而 成的電極間具有發光層’而該發光層纟有本發明之高分子 化合物。 又,本發明之高分子led而言,可舉:在陰極與發 光層之間设置有電子傳輸層的高分子LED,在陽極與發 光層之間设置有空穴傳輸層的高分子LED,在陰極與發 光層之間设置有電子傳輸層,且在陽極與發光層之間設置 有空穴傳輸層的高分子LED等。 本發明之高分子LED中,其至少一方之電極與發光 層之間設置有與該電極相鄰接而含有導電性高分子的層的 回分子LED ;其至少一方之電極與發光層之間亦設置有 與该電極相鄰接而膜厚2nm以下之絕緣層的高分子LED。 具體而言,可例示如下述之…至d)之構造。 a)陽極/發光層/陰極 46 314723 1287570 b)陽極/空穴傳輸層/發光層/陰極 C)陽極/發光層/電子傳輸層/陰極 d)陽極/空穴傳輸層/發光層/電子傳輸層/陰極 (在此,/記號表示各層相鄰接而經積層之意。以 同。) /在此,發光層係指具有發光功能之層,而空穴傳輪戶 係指具有傳輸^穴的功能之層,電子傳輸層則指具有傳^ 電子的功能之層。另外,將雷;彳#认a 月1 卜將電子傳輸層及空穴傳輸層總稍 為電荷傳輸層。 發光層、空穴傳輸層、電子傳輸層可分別獨立 層以上。 又,在與電極相鄰接所設置的電荷傳輸層之中,且有 改善來自電極的電荷植入效率並具有降低元件之驅動電壓 的效果者’一般特別稱為電荷植入層(空穴植入 植入層)。 再者,為提昇與電極之間的密貼性或來自電極的電荷 入之改善起見,可與電極相鄰接而設置前述之電荷植入 :或&amp;厚2_以下之絕緣層’又,亦為提昇界面之密貼 巧止混合等起見,可在電荷傳輸層或發光層之界面插 入薄薄的緩衝層。 有關層積層之順序或數目、以及各層厚度,可斟酌發 “效率或元件耐用壽命之下適當使用。 本發明中,設置有電荷植入層(電子植入層、空穴植 g )勺π刀子LED可例舉如:與陰極相鄰接而設置有電 314723 47 1287570 入屏的tt&quot;3分子LED、與陽極相鄰接而設置有電荷植 八盾的鬲分子LED。 例如,具體可舉:以下之e)至p)之構造。 岣陽極/電荷植入層/發光層/陰極 0陽極/發光層/電荷植入層/陰極 g) 陽極/電荷植入層/發光層/電荷植入層/陰極 h) 陽極/電荷植入層/空穴傳輸層/發光層/陰極 1)陽極/空穴傳輸層/發光層/電荷植入層/陰極 植人層/空穴傳輸層/發光層/電荷植人層/陰極 k) %極/電何植入層/發光層/電荷傳輸層/陰極 l) 陽極/發光層/電子傳輸層/電荷植入層/陰極 入層/發光層州 。)陽桎/::二層/空穴傳輸層/發光層/電荷傳輸層/陰極 P=二Γ層/發光層/電子傳輸層/電荷植入層/陰極 =極電何植入層/空穴傳輸層/發光層/電子傳輸層/電荷 植入層/陰極 电灯 思電荷植入層之具體例可例示如:含有導電性高分子的 層,經設置在陽極與空穴傳輸層之間,而含有 料與空穴傳輸層中所含的空穴傳輸材料的中間之值之離 化電位(P〇tentiaI)的材料之I;經言免置在陰極虚電 層之間’而含有具有陰極材料與電子傳輸層中所含的二 傳輸材料的中間之值之電子親和力的材料之層等。电子 如上述電荷植入層含有導電性高分子的料,則 電性高分子之電氣傳導度較佳為1〇.5S/cm以上i〇3s/c^¥ 314723 48 1287570 = 發光像元間之漏泄電流時,則較佳為 以下。 更佳為10 s/cm以上1〇ls/cr 5s/cmVi ^ ^ ^ ^ ^ ^ (d_)適當之離子⑽&quot;&quot;下起見’對該導電性高分子中摻雜 將摻雜的離子之種類, 如係電子枯a 禋頦如係空穴植入層則為陰離子, 乙歸續酸離子二極子之例可例示如··聚苯 子之例可例] 子、樟腦續酸離子等,而陽離 子等例不如:鐘離子、納離子、卸離子、四丁基錢離 電荷植入層之膜厚可例如為一 1〇〇 為 2nm 至 5〇nm。 权1 土 =電荷植入層的材料,則從電極或與 材抖間的關係上適當選擇即 生物、取^ 可例不如··聚苯胺及其衍 伸1及其衍生物、術及其衍生物、聚伸苯基 啉及JL及“何生物、聚伸嚷吩基伸乙稀及其衍生物、聚喹 有Ϊ:衍生物、聚喹喔啉及其衍生物、在主鏈或支鏈上含 :::胺構造的聚合物等之導電性高分子、金屬酿菁(銅 职月寺)、碳等。 —膜厚2麵以下之絕緣^係具有使電荷植入容易進 2功成者。_L述絕緣層之材料,可舉如··金屬氟化物、 至屬乳化物、有機絕緣材料等。設置有膜厚2麵以下之 絶緣層的高分子LED可舉如:與陰極相鄰接而設置有膜 314723 49 1287570 厚2nm以下之絕緣層的高分子led、與陽極相鄰接而設 置有膜厚2nm以下之絕緣層的高分子led。 具體可例舉如:以下之q)至ab)之構造。 q)陽極/膜厚2nm以下之絕緣層/發光層/陰極 0陽極/發光層/膜厚2nm以下之絕緣層/陰極 Ο陽極/膜厚2nm以下之絕緣層/發光層/膜厚2nm以下之 絕緣層/陰極 t)陽極/膜厚2nm以下之絕緣層/空穴傳輸層/發光層/吟極 幻陽極/空穴傳輸層/發光層/膜厚2nm以下之絕緣極 v)陽極/膜厚2nm以下之絕緣層/空幻專輸層/發 以下之絕緣層/陰極 膜厗 7極/膜厚2細以下之絕緣層/發光層/電子傳輸層/陰極 陽極/¾光層/電子傳輸層/膜厚2·以下之絕緣層/陰極 陽極/膜厚2nm以下之絕緣層㈣層/電子傳輸層/膜厚 2nm以下之絕緣層/陰極 z)陽極/膜厚2nm 傳輸層/陰極 以下之絕緣層/空穴傳輸層/發光層/電子 aa)陽極/空穴傳輸層/發 絕緣層/陰極 光層/電子傳輸層/膜厚 2nm以下之 厚一下之絕緣層/空穴傳輸層㈣ 曰膜厚2nm以下之絕緣層/陰極 的材分子LED中的發光層之膜厚,由於戶“ 成有所不同之故,按驅動電厂及發光效率 ”、、田值之方式選擇即可,惟例如為從^ 314723 50 1287570 較佳為2nm至500nm,更佳為511111至2〇〇nm。 本發明之高分子LED中,對發光層中可混合使用上 述高分子化合物以外之發光材料。又,在本發明之高分子 LED中,含有上述高分子螢光體以外之發光材料的發光 層’可積層含上述高分子螢光體旳發光層。 該發光材料,可使用周知者。在低分子化合物中,例 如可使用:萘衍生物、蒽或其衍生物、茈(perylene)或其 衍生物、聚甲川(p〇lymethine)系、咕噸(Xanthene)系香 豆素(ciunalin)系、花青苷(cyanine)系等之色素類、心羥基 喹啉或其衍生物之金屬配位化合物、芳族胺、四苯基環戊 二烯或其衍生物、或四苯基丁二烯或其衍生物等。 具體而言,可使用例如日本專利特開昭57_5i78i號, 同59-194393號公報中所記載等習知者。 發光層之成膜之方法並不制定,惟可例示使用從溶液 之成膜的方法。從溶液之成膜方法,可使用如:旋轉塗佈 法、洗注成型法、微凹版塗佈法、凹版塗佈法、鎮條塗佈 法、輕式塗佈法、鋼絲桿塗佈法、浸潰塗佈法、嘴霧塗佈 法、網版印刷法、柔版印刷法、膠版印刷法、喷墨印刷法 寺之塗佈法。 如本發明之高分子LED具有空穴傳輸層時,所使用 的空穴傳輸材料可例示如:聚乙稀基味唾或其街生物、聚 石夕烧或其衍生物、在支鏈或主鏈上具有芳族胺的聚石夕氧炫 衍生物y比唾啉衍生物、芳胺衍生物、甚(_叫衍生 物、三苯基二胺衍生物、聚苯胺或其衍生物、聚噻吩或其 314723 51 1287570 何生物、聚咄咯或其衍生物、聚(對伸苯基伸乙烯)或其衍 生物、或者聚(2,5 -伸噻吩基伸乙稀)或其衍生物者。 在此等之中’以聚乙稀基昨唑或其衍生物、聚矽烧或 /、行生物、在支鏈或主鏈上具有芳族胺化合物基的聚矽氧 烷何生物、聚苯胺或其衍生物、聚噻吩或其衍生物、聚(對 :本基伸乙烯)或其衍生物、或者聚(2,5-伸噻吩基伸乙稀) 或其衍生物等之高分子空穴傳輸材料為佳,更以聚乙烯基 心坐或其衍生物、聚㈣或其衍生物、在支鏈或主鏈上具 有芳族胺的聚矽氧烷衍生物為最佳。而低分子之空穴傳輸 材料則以使用分散在高分子黏合劑者為理辨。 可從例如乙烯基單體藉由 聚乙烯基咔唑或其衍生物, 陽離子聚合或自由基聚合而製得 切燒或其衍生物可例示如:化學評論期刊d ,、第89卷,1359頁0989年)出版,英國專利GB23 00 196 明書所記載之化合物等。合成方法亦可使用此等 Γ 法,但以奇萍(Kipping)法最為適用。 穴傳=减或其何生物,由於石夕氧燒骨架構造中殆無空 八傳輸性之故,以在支鏈或主鏈上呈 輸材料之構迕者A八有述低々子空穴傳 上且有特収可例示如:在支鏈或主鏈 /、有空穴傳輸性之芳族胺者。 二八傳輸層之成膜方法並不特別限定 八傳輸材料方面,可例示如:從 - 液而成的成眩夕古i 一阿刀子妫合劑的混合 战的成Μ之方法。又,在高分办 M«J i ^ 工八傳輸材料方面 J例不·由溶液所成的成膜之方法。 314723 52 1287570 k &gt;谷液而成的成膜所俊用、、办 ^ ^ 更用之/合液,祇要是能溶解空穴 傳輪材料者,並不特別限定。 ^ m 限疋该岭媒可例示如:氣仿、二 乳甲烷、二氯乙烷等之氣系 ― 田w 虱糸/合媒,四氣呋喃等之醚系溶媒; 本、一甲苯等之芳族炉糸、、六诚 工 工糸,合媒、丙_、甲基乙基甲酮等 之_系溶媒、乙酸乙酯、 乙&amp;L 丁 S曰、乙基溶纖素乙酸酯等 之酯系溶媒。 從溶液而成的成膜方法可使用:從溶液而成的旋轉塗 、% ’主成型法、彳政凹版塗佈法、凹版塗佈法、鑲條塗 佈法 '輥式塗佈法、鋼絲桿塗佈法、浸潰塗佈法、喷霧塗 2 、、凋版印刷法、柔版印刷法、膠版印刷法、噴墨印刷 等之塗佈方法。 土斤此〇的尚分子黏合劑以不過度阻礙電荷傳輸者為 ^又,對可視光的吸收不會太強者為適用。該高分子黏 二d可例不如:聚碳酸酯、聚丙烯酸酯、聚曱基丙烯酸酯、 水甲基甲基丙烯酸酯、苯乙烯、聚氯化乙烯、聚矽氧烷 一二穴傳輸層之膜厚其最適值因所使用的材料而有所不 同^要選擇按驅動電壓及發光效率所成恰當的值即可, 十隹S,少兩 而要不致產生針孔厚度,如過厚,則元件之驅動電 壓增高而;^ h ^ 个且。因而,該空穴傳輸層之膜厚則例如為從lnm 1 JJL Yj[\ 5 P / ^ nm至500nm為佳,又以5nm至200nm為 更佳。 … 發明之高分子LED具有 白头之兔子傳輸材料,可例示如:曙二唑衍生物 蒽醍 53 314723 1287570 甲烧或其衍生物、苯醌或其衍生物、萘醌或其衍生物、蒽 醒或其衍生物、四氰基蒽醌二甲烷或其衍生物、芴酮衍生 物、一苯基二氰基乙烯或其衍生物、二吩醌衍生物、或者 8-經基喹琳或其衍生物之金屬配位化合物、聚喹啉或其衍 生物、聚喹喔啉或其衍生物、聚芴或其衍生物。 其中,以噚二唑衍生物、苯醌或其衍生物、蒽醌或其 衍生物、或者8 -羥基喹啉或其衍生物之金屬配位化合物、 聚喹啉或其衍生物、聚唾喔啉或其衍生物、聚芴或其衍生 物為佳,而以2-(4-聯苯基)-5_(4-第三丁基苯基^^,扣噚 一唑、苯醌、恩醌、參喹啉酚)鋁、聚喹啉為更佳。 電子傳輸層之成膜法並無特別限定,惟在低分子電子 傳輸材料中可例n由㈣末而成的真空沈積法、=者 從溶液或炫融狀態而成的成膜之方法,而高分子 材料則可例示:藉由從溶液或溶融狀態而成的成膜之方則 法。在從溶液或熔融狀態而成的成膜時, 合劑。 J 1幵用鬲分子黏 攸令欣叻成的风胰所使用之溶媒,祇处、占 傳輪材料及/或高分子黏合劑者則並不特別限~ :解 :例不如·乳仿、—乳曱烷、二氯乙烷等之氯年、、:媒 乳1:1夫喃等之醚系溶媒;甲苯、二甲笨等^ 糸/合媒 丙_、甲基乙基甲酮等之酮系溶媒;乙萨之方知烴系溶: γτ&gt; 戈·* 酉日、了 ττ^ Τ基溶纖素乙酸酯等之酯系溶媒。 G ®欠丁 ! 從溶液或熔融狀態而成的成滕士 * 法 旋轉塗佈 鑲條塗佈 取胰方法可採用 澆注成型法、微凹版塗佈法、πη 凹版塗佈法 31472, 54 !28757〇 、噴霧塗佈 噴墨印刷法 去、輥式塗佈法、鋼絲桿塗佈法、浸潰塗佈法 去、網版印刷法、柔版印刷法、膠版印刷法、 等之塗佈法。 所混合的高分子黏合劑以不會過份阻礙電荷傳輸者為 =’又,對可視光的吸收不會太強者為適用。該高分子黏 ,劑可例示如:聚(N_乙烯基咔唑)、聚苯胺或其衍:物: 聚嚷吩2其衍生物、聚(對伸苯基伸乙烯)或其衍生物、聚 ^’5-伸卩塞吩基伸乙烯)或其衍生物、聚碳酸醋、聚丙稀酸 •曰、聚甲基丙烯酸酯、聚甲基曱基丙烯酸酯、聚笨乙烯、 聚氯化乙烯、或者聚矽氧烷等。 ^ ^子傳輸層之膜厚其最適值因所使用的材料有所不 同,只要選擇按驅動電壓及發光效率所成恰當的值即可, ^至^需要不致產生針孔厚度,如過厚,則元件之驅動電 =増冋而不宜。因而’該電子傳輸層之膜厚則例如為從 1 &quot; m以2nm至50〇nm為佳,又以5nm至2〇〇nm 更佳。 I成本^明之π分子LED的基板,祇要是當形成電 广形成有機物之層時不會變化者即可,而可例示如:玻 离、塑膠、高分子薄膜、矽基板等。如係不透明的基板時, 則相對之電極以透明或半透明者為佳。 本發明中,由陽極及陰極而成的電極之至少一方係透 明或不透明,而以陽極側為透明或半透明者為佳。 該陽極之材料可採用導電性之金屬氧化物膜、半透明 之金屬薄膜等。具體可用:氧化銦、氧化辞、氧化錫以及 314723 55 1287570 f用由其等之複合物的銦·錫·氧化物(ITO)、銦·鋅· 氧化物等而成的導電性玻璃所製作的膜等),或金、 名白、銀、銅箅,以γ Τ μ ' / 制 、 0、銦·辞·氧化物、氧化錫為佳。 製作方法可舉:直介冲择、+ η二/尤積法、濺鍍法、離子電鍍法、電鍍 法#。又,該陽極亦可淼又* 〜 用來本胺或其衍生物、聚噻吩或 其何生物等之有機透明導電膜。 :極之膜厚可考慮光之穿透性及電氣傳導度而適當選 擇’惟例如為1 〇nm至 以〜 至1〇心,而以20随至lAm為佳, 以50nm至5〇〇nm為更佳。 又’在陽極上,為容易進行電荷植入 酞菁衍生物、導電性古八子☆; 見’可设置由 V电性阿^刀子、碳而成的層、 化物或金屬氟化物、有機 〃屬戰 以下之層。 H巴緣材枓4而成的平均膜厚2nm 二=之高分子LED中採用的陰極材料以功 二=佳可採用例如 鈣銳、'鋇、鋁、銃、釩、鋅、釔、銦 試、鏡等之金屬,及其等中2種以上〇入二、销、 1種以上與金、銀、始、銅、猛、鈦、J '或者其等中 &quot;重的合金、石墨或石墨層間化合物等。合:、鶴、錫中 鎂-銀合金、鎂-銦合金、鎂_鋁合金、銦 &quot;可舉 金、鐘-鎮合金、链-銦合金、^紹合金等艮。鐘-銘合 為2層以上之積層構造。 、可作成陰極 陰極之膜厚,可考慮電氣傳導度 擇,惟例如為i〇nm至i〇// m,而以、性而適當選 n m至1 // m為佳, 314723 56 1287570 以 5〇11„1至 5〇〇nm4 更佳。 陰極之製作方法可採用:真空 將金屬薄膜進行熱壓接的層 又了賤=、以及 機物層之間設置由導電性古八亦可在陰極與有 化物或金屬氣化物、古她Γ 層’或者由金屬氧 以下之有機絶緣材料等而成的平均膜厚2—Metals) U9, (2001) p. 537) In terms of its orientation, it can be used as a directional method for liquid crystals, such as "Basic and Application of Liquid Crystals" (Mr. Matsumoto Masahiro, Kakuda City) Co-authored 'Industrial Survey, published in 1991, Chapter 5, "Structure and Physical Properties of Strong Dielectric Liquid Crystals" (Fukuda Tatsuo, Takenaka Hideo, published by Grosvenor, 1990) Chapter 7, "Liquid Crystals" The methods described in Volume 3/Zhang (1999), pages 3 to 16, etc. Among them, the wiping method, the photo-alignment method, the shear stress applying method or the lift coating method are simple and useful in the material orientation method and are easy to use. The t-wiping method is a method of gently wiping the surface of a substrate with a cloth or the like. The substrate for glass or polymer film can be used to wipe the substrate for the substrate, and gauze or cloth such as polyester, cotton, nylon or enamel can be used. In addition, if an orientation film is formed on the substrate, it can be more ancient--P". Here, the alignment film may, for example, be polyimine, polyamine, r VA (vinyl alcohol), polyester, nylon or the like, and a commercially available alignment film for liquid crystal may also be used by Tian. The crepe film can be formed by spin coating or flexographic printing, and the cloth to be used is wiped, and the gusset is appropriately selected for the film. The UW sand Γ method is a method of forming an orientation film on a substrate, and illuminating or irradiating the uv light by polarized "outer line" light, and has a directional function. The oriented film can be exemplified by: Sub-"melamine, poly 314723 44 1287570 vinyl cinnamate, and commercially available alignment film for liquid crystal can also be used. In the wiping method or photo-alignment method, interposed between the substrates subjected to the above-mentioned processing The oriented polymer material can be oriented. In this case, the substrate must be used as a material to achieve the liquid crystal phase or the isophase n temperature setting, and the polymer material can be placed before the substrate; Only the polymer material may be applied to the substrate subjected to the orientation treatment. The coating of the polymer may be performed by placing the polymer on the substrate and setting it to a Tg (glass transition temperature) or higher. The temperature of the liquid crystal phase or the isotropic phase is applied in one direction by a rod or the like, or a solution dissolved in an organic solvent is prepared, and it can be carried out by a spin coating method or a flexographic printing method. Variable stress application method refers to placement on a substrate The polymer material 枓 is placed on another substrate. The method of shifting the substrate-to-direction at a temperature that can be a liquid crystal phase or an isotropic phase. In this case, the substrate is used in a method of performing a wipe or a light directing method. The substrate for the orientation treatment described above, that is, the y garment has a higher degree of susceptibility. The substrate can be made of glass or a polymer film, or a metal roller can be used as a substrate for the movement of the stress. Refers to the method of immersing the substrate in a polymer solution, and then using the organic solution as a polymer solution, or the lifting degree of the substrate is not particularly limited, and can be selected and adjusted according to the orientation degree of the polymer. Material ^ The polymer compound of the present invention is used as a light-emitting of a polymer LED to achieve the effect of its purity on the luminescence property, and the first body is obtained by distillation. , sublimation purification, recrystallization, etc., 'polymerization after coating, and preferably, after synthesis, purification treatment according to re-precipitation 45 314723 1287570 precipitation purification, chromatography separation, etc. &gt;, due to utilization from the film Illumination or For the sake of light, the knives of the present invention are preferably those which have fluorescence or phosphorescence in a solid state. The excellent solvent for the polymer compound of the invention can be exemplified by chloroform, methane, dichloroethane, tetrahydrofuran, Toluene, xylene, monomethyl, tetrahydronaphthalene, decalin, n-butylbenzene, etc. Although it differs depending on the structure or molecular weight of the macromolecular substance, it can usually be dissolved in these solvents. 1% by weight or more. Next, the polymer LED of the present invention will be described. The molecular LED of the present invention is characterized in that it has a light-emitting layer between electrodes made of an anode and a cathode, and the light-emitting layer has the present invention. Further, the polymer LED of the present invention includes a polymer LED in which an electron transport layer is provided between a cathode and a light-emitting layer, and a hole transport layer is provided between the anode and the light-emitting layer. The polymer LED is a polymer LED in which an electron transport layer is provided between a cathode and a light-emitting layer, and a hole transport layer is provided between the anode and the light-emitting layer. In the polymer LED of the present invention, at least one of the electrodes and the light-emitting layer is provided with a return molecular LED adjacent to the electrode and containing a layer of a conductive polymer; at least one of the electrodes and the light-emitting layer is also A polymer LED having an insulating layer adjacent to the electrode and having a film thickness of 2 nm or less is provided. Specifically, configurations such as the following... to d) can be exemplified. a) anode / luminescent layer / cathode 46 314723 1287570 b) anode / hole transport layer / luminescent layer / cathode C) anode / luminescent layer / electron transport layer / cathode d) anode / hole transport layer / luminescent layer / electron transport Layer/cathode (herein, the / mark indicates that each layer is adjacent to each other and is laminated.) / Here, the light-emitting layer refers to a layer having a light-emitting function, and the hole-transporter refers to a transfer hole. The layer of function, the layer of electron transport refers to the layer that has the function of transmitting electrons. In addition, it is known that the electron transport layer and the hole transport layer are slightly charge transport layers. The light-emitting layer, the hole transport layer, and the electron transport layer may each be independently a layer or more. Further, among the charge transport layers disposed adjacent to the electrodes, and having an effect of improving charge implantation efficiency from the electrodes and having a driving voltage for lowering the elements, the charge implant layer is generally referred to as a charge implant layer. Into the implant layer). Furthermore, in order to improve the adhesion between the electrodes or the improvement of the charge from the electrodes, the aforementioned charge implantation may be provided adjacent to the electrodes: or &amp; an insulating layer having a thickness of 2 Å or less In order to improve the adhesion of the interface, it is also possible to insert a thin buffer layer at the interface of the charge transport layer or the light-emitting layer. Regarding the order or the number of layers, and the thickness of each layer, it can be appropriately used under the "efficiency or component durability life. In the present invention, a charge implant layer (electron implant layer, hole implant g) spoon π knife is provided. The LED can be exemplified by a tt&quot;3 molecular LED which is connected to the cathode and is provided with electricity 314723 47 1287570, and a 鬲 molecular LED which is adjacent to the anode and is provided with a charge of eight shields. For example, specifically: The following structures e) to p). 岣 anode / charge implant layer / luminescent layer / cathode 0 anode / luminescent layer / charge implant layer / cathode g) anode / charge implant layer / luminescent layer / charge implant layer /cathode h) anode / charge implant layer / hole transport layer / light-emitting layer / cathode 1) anode / hole transport layer / light-emitting layer / charge implant layer / cathode implant layer / hole transport layer / light-emitting layer / Charge implant layer/cathode k) % pole/electricity implant layer/light-emitting layer/charge transport layer/cathode l) anode/light-emitting layer/electron transport layer/charge implant layer/cathode-in layer/light-emitting layer state.) Yangshuo /:: two layers / hole transport layer / light emitting layer / charge transport layer / cathode P = two layers / light emitting layer / electron transport layer / charge implant layer / Cathode = Electrode, Implant Layer / Hole Transport Layer / Light Emitting Layer / Electron Transport Layer / Charge Implant Layer / Cathode Electric Lamp Charge Implant Layer Specific examples can be exemplified by a layer containing a conductive polymer, I is disposed between the anode and the hole transporting layer and contains a material having a value of the intermediate value of the hole transporting material contained in the hole transporting layer (P〇tentiaI); a layer of a material between the cathode virtual electric layer and containing an electron affinity having a value intermediate between the cathode material and the second transport material contained in the electron transport layer. The electron such as the charge implant layer contains a conductive polymer material. The electrical conductivity of the electrical polymer is preferably 1 〇.5 S/cm or more i 〇 3 s / c ^ ¥ 314723 48 1287570 = when the leakage current between the illuminating pixels is preferably below. More preferably 10 s/cm or more 1〇ls/cr 5s/cmVi ^ ^ ^ ^ ^ ^ (d_) Suitable ions (10) &quot;&quot; See below for the type of ion doped in the conductive polymer, such as The electrons are dry, such as the hole-implanted layer, which is an anion, and the example of the secondary acid-ion diode is exemplified. · Examples of polyphenylenes can be exemplified by sub- and camphor-reduced acid ions, and cations and the like are inferior: the film thickness of the ion, the nano-ion, the unloading ion, and the tetrabutyl-doped charge-implanting layer can be, for example, one. 〇〇 is 2nm to 5〇nm. Weight 1 soil = material of the charge-implanted layer, the appropriate choice from the electrode or the relationship between the material and the material is the biological, take ^ can be as good as the polyaniline and its extension 1 And its derivatives, its derivatives and derivatives, polyphenylenes and JL and "Ho bio, poly-extension thiophene and its derivatives, polyquinoxaline: derivatives, polyquinoxalines and their derivatives The material, the conductive polymer such as a polymer having an amine structure, a metal phthalocyanine (Bronze Moon Temple), carbon, or the like is contained in the main chain or the branch. —Insulation of a film thickness of 2 or less has a function of facilitating charge implantation. The material of the insulating layer may be, for example, a metal fluoride, an emulsifier, or an organic insulating material. The polymer LED provided with the insulating layer having a thickness of two or less is provided with a polymer led layer which is provided adjacent to the cathode and has an insulating layer of 314723 49 1287570 and a thickness of 2 nm or less, and is provided adjacent to the anode and provided with a film. A polymer led of an insulating layer having a thickness of 2 nm or less. Specifically, for example, the following configurations of q) to ab) are exemplified. q) Insulation layer/light-emitting layer/cathode thickness: 2 nm or less, anode layer/light-emitting layer, film thickness: 2 nm or less, insulating layer, cathode, anode, film thickness: 2 nm or less, insulating layer, light-emitting layer, film thickness, 2 nm or less Insulation layer/cathode t) anode/film thickness 2 nm or less insulating layer/hole transport layer/light emitting layer/thin pole phantom anode/hole transport layer/light emitting layer/insulating electrode with film thickness of 2 nm or less v) anode/film thickness Insulation layer below 2nm / singular transmission layer / under the insulation layer / cathode film 厗 7 pole / film thickness 2 below the insulation layer / luminescent layer / electron transport layer / cathode anode / 3⁄4 optical layer / electron transport layer / Insulation layer having a film thickness of 2 Å or less / cathode anode / insulating layer having a film thickness of 2 nm or less (four) layer / electron transport layer / insulating layer having a film thickness of 2 nm or less / cathode z) anode / film thickness 2 nm transmission layer / underlying insulating layer / hole transport layer / light-emitting layer / electron aa) anode / hole transport layer / hair insulating layer / cathode light layer / electron transport layer / film thickness of 2nm or less thick insulation layer / hole transport layer (four) 曰 film thickness The thickness of the light-emitting layer in the LED of the insulating layer/cathode of 2 nm or less is driven by the power plant and the hair Efficiency ",, mode field value can be selected, but for example, from ^ 314,723,501,287,570 preferably from 2nm to 500 nm, more preferably 511,111 to 2〇〇nm. In the polymer LED of the present invention, a light-emitting material other than the above polymer compound may be used in combination with the light-emitting layer. Further, in the polymer LED of the present invention, the light-emitting layer ’ containing the light-emitting material other than the polymer phosphor may be laminated to contain the polymer fluorescent luminescent layer. The luminescent material can be used by a well-known person. Among the low molecular compounds, for example, a naphthalene derivative, an anthracene or a derivative thereof, perylene or a derivative thereof, a p〇lymethine system, a xanthene coumarin, or the like can be used. a pigment, a cyanine or the like, a metal complex of hydroxyquinoline or a derivative thereof, an aromatic amine, tetraphenylcyclopentadiene or a derivative thereof, or tetraphenylbutane Aene or a derivative thereof or the like. Specifically, for example, a person who is described in Japanese Patent Laid-Open No. SHO 57-5i78i, No. 59-194393, and the like can be used. The method of film formation of the light-emitting layer is not established, but a method of forming a film from a solution can be exemplified. From the film forming method of the solution, for example, a spin coating method, a washing molding method, a micro gravure coating method, a gravure coating method, a strip coating method, a light coating method, a wire rod coating method, or the like can be used. Dip coating method, nozzle spray coating method, screen printing method, flexographic printing method, offset printing method, and inkjet printing method coating method. When the polymer LED of the present invention has a hole transporting layer, the hole transporting material used may be exemplified by, for example, a polyethylene-based scent or its street organism, a poly-stone or a derivative thereof, in a branch or a main a polyoxo sulphate derivative y having an aromatic amine in the chain, a porphyrin derivative, an arylamine derivative, or even a derivative, a triphenyldiamine derivative, a polyaniline or a derivative thereof, a polythiophene Or its 314723 51 1287570 Ho, polypyrrole or its derivatives, poly(p-phenylene vinyl) or its derivatives, or poly(2,5-threhenylthione) or its derivatives. Or a polyoxazolidine or a derivative thereof, a polyfluorene or a living organism, a polyoxyalkylene compound having an aromatic amine compound group in a branched or main chain, polyaniline or the like A polymer hole transporting material such as a derivative, a polythiophene or a derivative thereof, a poly(p-(ethylene)) or a derivative thereof, or a poly(2,5-thienylthione) or a derivative thereof is preferred. , further comprising a polyethylene core or a derivative thereof, poly(tetra) or a derivative thereof, having an aromatic amine in a branch or a main chain The polyoxyalkylene derivative is preferred, and the low molecular hole transport material is distinguished by the use of a polymer binder. It can be derived from, for example, a vinyl monomer by polyvinylcarbazole or its derivative. The compound, the cationic polymerization or the radical polymerization to obtain a cut or a derivative thereof can be exemplified by, for example, Chemical Review Journal d, Vol. 89, p. 1359, 0989, and the compounds described in the British Patent GB 23 00 196. . The synthesis method can also use these methods, but it is most suitable for the Kipping method. Acupoint transmission = reduction or what its biology, due to the absence of vacancies in the structure of the stone-like oxygen-burning skeleton, the structure of the material in the branch or the main chain is a low-twist hole. The above can be exemplified by the following: in the branched or main chain /, the hole transporting aromatic amine. The film-forming method of the 28-transport layer is not particularly limited. In terms of the eight-transport material, a method of forming a mixture of the glazed sage and the scorpion splicing agent can be exemplified. In addition, in the high-scoring M«J i ^ 八八 transmission materials, J cases are not formed by a solution. 314723 52 1287570 k &gt; The film formed by the solution of the grain is used for the film, and the ^^ is used more, as long as it is capable of dissolving the hole transfer material, it is not particularly limited. ^ m 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 岭 岭 疋 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 岭 气 岭 气 气 气Aromatic furnace, Hechenggong, 合, _, methyl ethyl ketone, etc., solvent, ethyl acetate, B &amp; L, S, ethyl fibrin acetate Ester-based solvent. The film formation method from the solution can be used: spin coating from solution, % 'main molding method, gravure coating method, gravure coating method, strip coating method' roll coating method, steel wire Coating methods such as a bar coating method, a dip coating method, a spray coating 2, a die printing method, a flexographic printing method, an offset printing method, and inkjet printing. It is also suitable for those who do not excessively hinder the charge transfer, and the absorption of visible light is not too strong. The polymer adhesive d can be as follows: polycarbonate, polyacrylate, polydecyl acrylate, water methyl methacrylate, styrene, polyvinyl chloride, polyoxane, a two-hole transport layer The optimum value of the film thickness varies depending on the materials used. ^ It is necessary to select the appropriate value according to the driving voltage and luminous efficiency. Ten 隹S, two or less, should not cause pinhole thickness. If it is too thick, then The driving voltage of the component is increased; ^ h ^ and . Therefore, the film thickness of the hole transporting layer is, for example, preferably from 1 nm to 1 JJL Yj [\ 5 P / ^ nm to 500 nm, more preferably from 5 nm to 200 nm. The inventive polymer LED has a white-headed rabbit transport material, and can be exemplified by, for example, an oxadiazole derivative 蒽醍53 314723 1287570, or a derivative thereof, a benzoquinone or a derivative thereof, a naphthoquinone or a derivative thereof, and an awakening Or a derivative thereof, tetracyanoquinodimethane or a derivative thereof, an anthrone derivative, monophenyldicyanoethylene or a derivative thereof, a diphenanthrene derivative, or 8-quinoquine or a derivative thereof a metal coordination compound, polyquinoline or a derivative thereof, polyquinoxaline or a derivative thereof, polyfluorene or a derivative thereof. Wherein, the oxadiazole derivative, benzoquinone or a derivative thereof, hydrazine or a derivative thereof, or a metal coordination compound of 8-hydroxyquinoline or a derivative thereof, polyquinoline or a derivative thereof, polypyre Or a quinone or a derivative thereof, polyfluorene or a derivative thereof, preferably 2-(4-biphenyl)-5-(4-t-butylphenyl), oxazole, benzoquinone, enamine , quinolinol phenol) aluminum, polyquinoline is more preferred. The film formation method of the electron transport layer is not particularly limited, but in the low molecular electron transport material, a vacuum deposition method in which n is terminated by (4), or a method in which a film is formed from a solution or a molten state can be exemplified. The polymer material can be exemplified by a method of forming a film from a solution or a molten state. When forming a film from a solution or a molten state, a mixture is used. J 1 幵 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 鬲 J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J - an ether-based solvent such as lactine or dichloroethane, or an ether-based solvent such as a medium emulsion of 1:1; a toluene, a dimethyl group, etc., a hydrazine, a solvent, a methyl ethyl ketone, etc. A ketone-based solvent; a solution of a hydrocarbon in a solution of etaza: γτ> ·* 酉 、, an ester-based solvent such as ττ^ Τ-based fibrin acetate. G ® 欠丁! From the solution or molten state of the Tengshi* method spin coating strip coating pancreas method can be cast molding, micro gravure coating method, πη gravure coating method 31472, 54 !28757 Coating methods such as enamel, spray coating, inkjet printing, roll coating, wire rod coating, dip coating, screen printing, flexographic printing, offset printing, and the like. The polymer binder to be mixed is suitable for those who do not excessively hinder the charge transfer, and which does not absorb too much visible light. The polymer binder may, for example, be poly(N-vinylcarbazole), polyaniline or its derivative: polybenzaldehyde 2 derivative thereof, poly(p-phenylene vinylene) or a derivative thereof, poly ^'5-Extenient thiophene-extended ethylene) or its derivatives, polycarbonate, polyacrylic acid, hydrazine, polymethacrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, or Polyoxane and the like. ^ ^ The film thickness of the sub-transport layer is different depending on the material used. As long as the appropriate value is selected according to the driving voltage and the luminous efficiency, it is necessary to make the pinhole thickness, such as too thick, Then the driving power of the component is not suitable. Therefore, the film thickness of the electron transporting layer is, for example, preferably from 2 nm to 50 nm, and more preferably from 5 nm to 2 Å. The substrate of the π-molecule LED of the present invention is not particularly limited as long as it is formed into a layer in which an organic substance is formed, and examples thereof include glass, plastic, polymer film, and ruthenium substrate. In the case of an opaque substrate, the opposite electrode is preferably transparent or translucent. In the present invention, at least one of the electrodes made of the anode and the cathode is transparent or opaque, and the anode side is preferably transparent or translucent. The material of the anode may be a conductive metal oxide film, a translucent metal film or the like. Specifically, it can be used: indium oxide, oxidized, tin oxide, and 314723 55 1287570 f made of conductive glass made of indium, tin, oxide (ITO), indium, zinc, oxide, or the like of the composite. Membrane, etc., or gold, white, silver, or copper, preferably γ Τ μ ' / system, 0, indium, rhodium oxide, tin oxide. The production method can be mentioned: direct medium selection, + η two / special product method, sputtering method, ion plating method, plating method #. Further, the anode may be an organic transparent conductive film which is used for the amine or a derivative thereof, polythiophene or a living organism thereof. The film thickness of the electrode can be appropriately selected in consideration of light penetration and electrical conductivity. 'For example, it is 1 〇 nm to ~1 to 1 ,, and 20 to lAm is preferable, 50 nm to 5 〇〇 nm. For better. And 'on the anode, for easy charge-implantation of phthalocyanine derivatives, conductive ancient eight sons ☆; see 'can be set from V-electricity knives, carbon layer, compound or metal fluoride, organic genus Battle the following layers. The average film thickness of the H-bar material 枓4 is 2nm. The cathode material used in the polymer LED is the best. For example, calcium sharp, '钡, aluminum, antimony, vanadium, zinc, antimony, indium are used. Metals such as mirrors, etc., and two or more of them are infused into two, pin, one or more kinds of alloys, graphite or graphite with gold, silver, tin, copper, fission, titanium, J' or the like. Interlayer compounds, etc. Combination:, crane, tin, magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium &quot; can be used for gold, bell-alloy, chain-indium alloy, and slag alloy. Zhong-Minghe is a laminated structure of two or more layers. The film thickness of the cathode cathode can be determined, and the electrical conductivity can be considered, for example, i 〇 nm to i 〇 / / m, and it is preferable to select nm to 1 / m, and 314723 56 1287570 to 5 〇11„1 to 5〇〇nm4 is better. The cathode can be produced by vacuum-bonding the metal film to the layer which is thermocompression-bonded, and the layer between the organic layers can be placed at the cathode. The average film thickness of the compound or metal vapor, the ancient her layer, or the organic insulating material below the metal oxygen 2

之用的二二 陰極後’農貼有保護該高分子LED ㈣層。為能長期安定使用該高分子led起見, :核護元件,以裝貼保護層及/或保護罩者為佳。 该保護層可摄用古八2 化物、金屬删化物等二/屬氧化物、金屬氟 ㉟硼化物寺。又’保護罩可採用玻璃板、在表面 貝把低透水率處理的塑膠板等’而以使用熱效果樹脂或 光固化樹脂將該罩緊貼元件基板的方法為適用。如使用間 ^片以維持空間時,則可容易防止元件遭受損傷。 如對該空間内封入如氮或氬等的惰性氣體時,則可防 止陰極之氧化,如爯太兮允 丹在。亥工間内玟置如氧化鋇等之乾燥 』’即可谷易抑制在製造過程中所吸附的水份所帶給元件 的損傷。以採取此中之任一個以上之對策者為佳。 又,在由陽極及陰極而成的電極間具有電荷傳輸層及 發光層,而該電荷傳輸層亦可含有本發明之高分子化合物 之高分子LED。 本發明之高分子發光元件,可作為平面狀光源、段顯 示(segment display)裝置、點矩陣(d〇t matrix)顯示裝置、 液晶顯示裝置之背光(back light)使用。 如使用本發明之高分子LED以獲得平面狀之發光 57 314723 1287570 時,可將面狀之陽極與陰極按重疊之方式配置即可。又, 為獲得圖型(pattern)狀之發光時,則# :在前平面狀之發 光凡件表面δ又置有裂設圖型狀之窗孔的遮罩之方法。又, 冬非毛光。p之有機物層形成為極度厚以作成實質上非發光 之方法,將陽極或陰極之任—方或雙方之電極形成為圖型 去依此等中之任一方法形成圖型,並將幾個電極 ^獨立方式配置為能〇N/〇FF(通/斷),即可製得能顯示數 字或文字、簡單記號的段類型之顯示元件。再者,為作成 』矩陣兀件時,則將陽極與陰極一起形成為條紋(stripe) 狀,並按能垂直相交之方式配置即可。藉由將複數種發光 色不相同的高分子螢光體分開塗佈的方法,或使用渡色器 或螢光變換濾色器的方法’ 能實現部份彩色顯示、多色 顯示。點矩陣元件亦能進行無源驅動 亦可與TFT(薄膜電晶體)組合而進行有源驅動(3如” dr1Ving)。此等顯示元件’可作為電腦、電視、行動線端 機、行動電^、汽車導航系、統、視訊攝影機之取景器等的 顯示裝置使用。 再者,前述平面狀之發光元件係一種自生光薄型,而 可適用於液晶顯示裝置之背光用平面狀光源或者作為平面 狀之照明用光源。又,如使用撓性基板,則亦可作為曲面 狀之光源或顯示裝置使用。 '' 以下,為更詳細說明本發明而列與 ,、 卜 β ^夕丨J不貝施例,惟本發明 並不被此等實施例所限定。 在此,平均分子量係以四氫呋喃為 ^ ^,合嫖依凝膠滲透 314723 58 1287570 聚苯 色譜法(GPC)所求得的 复施例1 乙稀換算之數平均分子量 〇 &lt;單體1之合成&gt; 8 及^溴代-3,7-二曱基辛 垸22 lg、及碳酸鉀6〇g在N,N- -甲|田姑a ,一甲基甲醯胺450g中在100 C下進行反應2 8小時。冷卻此@座 、 丨此反應液後靜置,結果分離 為2層。接著,回收上層。使 ^ 用雖子父換水洗淨所回收的 溶液。反覆水洗至洗淨水成為中 ~ τ注马止。接著,將此油層 進行減壓乾燥後,使用矽膠管柱,驻 ^ &amp;不王,猎由流動相甲苯/己烷 :&quot;,將未反應i-演代-3,7-二甲基辛院及韓花酸之四院 乳取代物去除後,#由流動相氯仿’將二烷氧取代物加以 ^取。從所分取的溶液使溶媒進行減壓餾除後加以減壓乾 燥,製得二烷氧取代物6.5g。所得的二烷氧取代物,從 質子核子共振譜(NMR)之化學位移以及2,7_位及3,8位之 羥基與1-溴代-3,7-二曱基辛烷間之反應性考察之結果, 推定為2,7-二羥基-3,8-二(3,7-二甲基辛氧基Hl]苯并吡 喃[5,4,3-cde][l]苯并吡喃-5,l〇-二酮者。 將所得的化學物,稱為單體i。 &lt;高分子化合物1之合成&gt; 將單體1與三氟甲烧礦酸酐反應所得的單體1之三氣 甲烷磺酸酯0.59g、及9,9-二辛基-2,7·苟二硼酸乙二醇酯 〇.37g、及碳酸鉀lg,溶解在甲苯20g及離子交換水2〇g 中後,在氮氣中沸騰,進行系内之氮氣交換。在該溶液中 添加將纪觸媒{Pd(pph3)4}0.02g溶解在預先經以氮氣冒泡 314723 59 1287570 並脫氣的甲苯lml内的溶液。室溫下攪拌10分鐘後,在 loot:下進行反應5小時。在此,反應係在氮氣環境中進 行。 將此反應液冷卻後’添加甲苯,分液後回收甲苯層。 使用1當量濃度之鹽酸洗淨此甲苯溶液後,再使用2%氨 水洗淨,最後使用離子交換水洗淨。將此甲苯溶液通過填 充有氧化鋁的管柱以精製後,將此甲苯溶液注入甲醇中再 加以沈澱精製。回收所生成的沈澱後,經過減壓乾燥而得 聚合物0.3g。將此所得的聚合物稱為高分子化合物i。 高分子化合物i之聚乙烯換算之數平均分子量為2 〇 xW’而重量平均分子量為5.6χ1〇4。下列表示從飼裝 物所推定的高分子化合物丨中所含反複單元之構造。After the use of the two cathodes, the agricultural patch protects the polymer LED (four) layer. In order to be able to use the polymer for long-term stability, the core protection component is preferably a protective layer and/or a protective cover. The protective layer can be used for the second/genus oxides such as the ancient octagonal compound and the metal-depleted compound, and the metal fluoride 35 boride temple. Further, a method in which a protective cover can be a glass plate or a plastic plate treated with a low water permeability on the surface, and the cover is placed on the element substrate by using a heat-effect resin or a photo-curable resin is applicable. When a sheet is used to maintain space, it is easy to prevent damage to the component. If an inert gas such as nitrogen or argon is enclosed in the space, the oxidation of the cathode can be prevented, such as 爯太兮. In the slab, the drying of the sputum, such as yttrium oxide, can be used to suppress damage to the components caused by moisture adsorbed during the manufacturing process. It is preferable to take measures of any one or more of them. Further, the charge transport layer and the light-emitting layer are provided between the electrodes formed of the anode and the cathode, and the charge transport layer may also contain the polymer LED of the polymer compound of the present invention. The polymer light-emitting device of the present invention can be used as a planar light source, a segment display device, a dot matrix display device, and a backlight of a liquid crystal display device. When the polymer LED of the present invention is used to obtain a planar light-emitting 57 314723 1287570, the planar anode and the cathode may be disposed to overlap each other. Further, in order to obtain a pattern-like luminescence, #: a method of arranging a mask having a pattern-like aperture in the front surface-like luminescence surface δ. Also, winter is not a hair. The organic layer of p is formed to be extremely thick to form a substantially non-luminous method, and any or both of the electrodes of the anode or the cathode are formed into a pattern to form a pattern according to any of the methods, and several The electrode ^ is independently configured to be 〇N/〇FF (on/off), and a display element of a segment type capable of displaying numbers or characters and simple marks can be obtained. Further, in order to create a matrix element, the anode and the cathode are formed in a stripe shape and arranged so as to be vertically intersectable. Partial color display and multi-color display can be realized by a method of separately applying a plurality of polymer phosphors having different luminescent colors, or a method using a color filter or a fluorescent conversion color filter. The dot matrix component can also be passively driven or combined with a TFT (thin film transistor) for active driving (3 such as "dr1Ving". These display components can be used as computers, televisions, mobile line terminals, mobile phones^ The display device of the car navigation system, the viewfinder of the video camera, etc. is used. The planar light-emitting element is a self-generated thin light type, and can be applied to a planar light source for backlight of a liquid crystal display device or as a planar shape. In addition, if a flexible substrate is used, it can also be used as a curved light source or a display device. '' Hereinafter, the present invention will be described in more detail, and ββ ^丨J 不贝施For example, the present invention is not limited by the examples. Here, the average molecular weight is a compound obtained by using tetrahydrofuran as a compound and a gel permeation 314723 58 1287570 polyphenyl chromatography (GPC). 1 The average molecular weight of ethylene conversion 〇 &lt; Synthesis of monomer 1 &gt; 8 and ^ bromo-3,7-dimercaptooctyl 22 lg, and potassium carbonate 6 〇 g in N, N- - A | Tiangu a, monomethylcarbamide 450g in 100 C The reaction was carried out for 28 hours. After cooling the @座, the reaction solution was allowed to stand, and the mixture was separated into two layers. Then, the upper layer was recovered, and the recovered solution was washed with water, and the washed solution was washed with water until it was washed. In the middle ~ τ note the horse. Then, after the oil layer is dried under reduced pressure, use the rubber tube column, station ^ & not king, hunting by mobile phase toluene / hexane: &quot;, unreacted i-al After the removal of the 4,7-dimethyl xinyuan and hanhuaic acid four-milk substitute, the dialkyloxy substituent is extracted from the mobile phase chloroform. The solvent is distilled off from the fractionated solution. After drying, it was dried under reduced pressure to obtain 6.5 g of a dialkoxide substitution. The resulting dialkoxy substitution, chemical shift from proton nucleus resonance spectroscopy (NMR) and hydroxyl groups at positions 2, 7 and 3, 8 The result of investigation on the reactivity between 1-bromo-3,7-didecyloctane is presumed to be 2,7-dihydroxy-3,8-bis(3,7-dimethyloctyloxyl)benzene. And pyran [5,4,3-cde][l]benzopyran-5,l〇-dione. The obtained chemical is referred to as monomer i. &lt;Synthesis of Polymer Compound 1&gt ; react monomer 1 with trifluoromethane orthoic anhydride The monomer 1 of the three gas methane sulfonate 0.59g, and 9,9-dioctyl-2,7·oxadicarboxylate 〇.37g, and potassium carbonate lg, dissolved in toluene 20g and ions After exchanging water in 2〇g, it was boiled in nitrogen to carry out nitrogen exchange in the system. Adding 0.02 g of the catalyst {Pd(pph3)4} to the solution was dissolved in nitrogen gas 314723 59 1287570 in advance and A solution of degassed toluene in 1 ml was stirred at room temperature for 10 minutes, and then reacted under a loot: for 5 hours. Here, the reaction was carried out in a nitrogen atmosphere. After the reaction solution was cooled, toluene was added, and the toluene layer was collected after liquid separation. The toluene solution was washed with 1 equivalent of hydrochloric acid, washed with 2% aqueous ammonia, and finally washed with ion-exchanged water. After the toluene solution was purified by passing through a column packed with alumina, the toluene solution was poured into methanol and subjected to precipitation purification. After the precipitate formed was recovered, it was dried under reduced pressure to give a crystal. This obtained polymer is referred to as a polymer compound i. The polymer compound i has a number average molecular weight of 2 〇 xW' in terms of polyethylene and a weight average molecular weight of 5.6 χ 1 〇 4. The following shows the structure of the repeating unit contained in the polymer compound 丨 estimated from the feed.

例| 施 ΐ 向分于化合物 姊i之… ^早&quot;m甲μ酸酐反應所 &quot; 二氣甲烧石黃酸醋〇.63§及2,2,,二吼。定〇 =氫π夫喃(脫水)3Gg中後,氮氣μ騰,進㈠ 氣交換。在該溶液中添加雙(1,5_環辛二稀丁’、 &lt; ⑼卿⑽)取5g,在室溫增iq分鐘後升溫、 314723 60 1287570 °C下反應3小時。在此,反應係在氮氣環境中進行。 將此反應液冷卻後,添加25%氨水10ml/甲醇1〇〇ml/ 離子交換水200ml混合溶液,並攪拌約1小時。將此溶 液在室溫下靜置一夜後過濾以回收所生成的沈澱。接=, 將此沈澱乾燥後,溶解在甲苯中。過濾以去除不溶物後, 將此溶液通過填充有氧化鋁的管柱以精製。接著,將此溶 液注入甲醇中再加以沈殿精製。回收所生成的沈澱,並: 用乙醇洗淨後’經料辭ϋ得聚合物G G2g。將所得 的聚合物稱為高分子化合物2。 孫咼分于化合物Example | Shi ΐ Divided into the compound 姊i... ^早&quot;m-A-anhydride reaction station &quot; II gas-burning stone vinegar vinegar 〇.63§ and 2,2,, 吼. After the determination of 氢 = hydrogen π 喃 ( (dehydration) in 3Gg, nitrogen nitrox, into (a) gas exchange. To the solution, bis(1,5-cyclooctanedipine) and &lt;(9)Qing (10) were added to obtain 5 g, and the mixture was heated at room temperature for a period of 2 minutes, and then heated at 314723 60 1287570 ° C for 3 hours. Here, the reaction was carried out in a nitrogen atmosphere. After cooling the reaction solution, a mixed solution of 25% ammonia water 10 ml/methanol 1 〇〇ml/ion exchanged water 200 ml was added, and the mixture was stirred for about 1 hour. The solution was allowed to stand at room temperature overnight and then filtered to recover the resulting precipitate. After the precipitate was dried, it was dissolved in toluene. After filtration to remove insolubles, the solution was purified by passing through a column packed with alumina. Next, the solution was poured into methanol and refined into a chamber. The precipitate formed was recovered, and: after washing with ethanol, the polymer G G2 was obtained. The obtained polymer is referred to as polymer compound 2. Sun Wei is divided into compounds

一 1 a -T〜双卞叼分子量J 4·5χ 103,而重量平均分子晉 丁 ^刀千里為7.2Χ 1〇3。下列表示從飼 裝物所推定的高分子化合物2中所含反複單元之構造。 !外’使用偏光顯微鏡’在直交偏光下(⑽SSnicol) 下觀察該高分子化合物2之姓s / ’ 一 物2之結果’從其結構(texture)判斷,A 1 a -T ~ biguanide molecular weight J 4 · 5 χ 103, and the weight average molecular Jin Ding ^ knife miles is 7.2 Χ 1 〇 3. The structure of the repeating unit contained in the polymer compound 2 estimated from the contents is shown below. Outside the 'Using a polarizing microscope', the result of observing the surname s / ' of the polymer compound 2 under orthogonal polarized light ((10) SSnicol) is judged from its texture,

曰B 確認該局分子化合物2為一種液 0曰B confirm that the molecular compound 2 is a liquid 0

實施例3 &lt;高分子化合物3之合成 將實施例1所得 之三氟曱燒石黃酉变Example 3 &lt;Synthesis of Polymer Compound 3 The trifluoroanthracene pyroxantine obtained in Example 1 was changed.

ϋΟ | 早月丑1與二氟甲燒石黃酸酐反應所得單 §曰 0.63g 及 Ν,Ν-雙(4-溴苯基)-Ν,Ν,_ 314723 61 1287570 雙(4-正丁基苯基伸苯基二胺〇.23g及2,2,·聯二哦咬 〇.39g溶解在四氫呋喃(脫水)30g中後,在氮氣中滞騰, 進行糸内之氣氣交換。在έ亥浴液中添加雙(1,5_環辛-稀) 鎳(O){Ni(COD)2}0.7g,在室溫下擾拌10分鐘後升溫,在 60°C下反應3小時。在此,反應係在氮氣環境中進行。 將此反應液冷卻後,添加25%氨水1〇ml/甲醇1〇〇mi/ 離子交換水200ml混合溶液,並攪拌約1小時。將此溶 液在室溫下靜置一夜後過濾以回收所生成的沈澱。接著, 將此沈澱乾燥後,溶解在甲苯中。過濾以去除不溶物後, 將此溶液通過填充有氧化鋁的管柱以精製。接著,將此溶 液注入甲醇中再加以沈澱精製。回收所生成的沈澱,以甲 醇洗淨後,經過減壓乾燥而得聚合物G G3g。將此所得的 聚合物稱為高分子化合物3。 該高分子化合物3之聚苯乙烯換算之數平均分子量為 5·3χ1〇3,而重量平均分子吾兔1〇14 』刀于里為1·2χ 1〇4。下列表示從飼 裝物所推定的高分子化合物3中所冬$ %时- 口^/ j γ所含反禝早兀之構造。 314723 62 1287570 ΟϋΟ | Early ugly 1 and difluoromethane fluorescein to obtain a single § 曰 0.63g and Ν, Ν-bis(4-bromophenyl)-Ν, Ν, _ 314723 61 1287570 bis (4-n-butyl Phenyl phenyldiamine oxime. 23g and 2,2, · 联二哦 bite 〇. 39g dissolved in tetrahydrofuran (dehydrated) 30g, stagnation in nitrogen, gas exchange in the sputum. Add bis (1,5-cyclooctane-diluted) nickel (O) {Ni(COD) 2} 0.7 g to the solution, stir at room temperature for 10 minutes, then raise the temperature, and react at 60 ° C for 3 hours. The reaction was carried out under a nitrogen atmosphere. After cooling the reaction solution, a mixed solution of 25% ammonia/1 〇〇ml/100 ml of ion-exchanged water was added and stirred for about 1 hour. After standing overnight, it was filtered to recover the precipitate formed. Then, the precipitate was dried and dissolved in toluene. After filtration to remove insolubles, the solution was purified by passing through a column packed with alumina. The solution was poured into methanol and purified by precipitation. The resulting precipitate was recovered, washed with methanol, and dried under reduced pressure to give a polymer G G 3 g. The polymer is called polymer compound 3. The average molecular weight of the polymer compound 3 in terms of polystyrene is 5·3χ1〇3, and the weight average molecular weight of the rabbit is 1〇14 刀. The following shows the structure of the 禝 口 / j j 高分子 高分子 314 314 高分子 高分子 高分子 高分子 高分子 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314 314

ΟΟ

C4H9 C4H9 复Ife例4 &lt;向分子化合物4之合成&gt; 將實施例1所得單體1與三氟甲烷磺酸酐反應所得單 體1之三氟甲烷磺酸酯〇.25g及1,4-二溴代-2,5-雙(3,7-二 甲基辛氧基)苯0.66g以及2,2,-聯二吡啶〇.61g溶解在四 氫呋喃(脫水)40g中後,在氮氣中沸騰,進行系內之氮氣 交換。在溶液中添加雙(1,5-環辛二烯)鎳 (0){Ni(C0D)2} l.lg,在室溫下反應24小時。在此,反應 係在氮氣環境中進行。 接著,對此反應液中,添加25%氨水10ml/甲醇30ml/ 離子交換水60ml混合溶液,並攪拌約1小時。將此溶液 在室溫下靜置一夜後過濾以回收所生成的沈澱。接著,將 此沈澱乾燥後,溶解在甲苯中。過濾以去除不溶物。其次, 將該溶液以1當量濃度鹽酸洗淨、分液後,接著,使用約 63 314723 1287570 2.5%之氨水洗淨、分液甲笨層後,以離子 苯層。其次,將所得甲苯溶液注入甲醇又換水洗淨甲 回收所生成的沈澱,以甲醇、、秦導% _ 〇 ^沈澱精製。 合物0均。將此所得的聚合物稱為 “而付- 該高分子化合物4之聚苯乙烯 。物4。 裝物所推定的高分子化合物4所含 &amp;不攸飼 坩3重禝早兀之構造。C4H9 C4H9 complex Ife Example 4 &lt;Synthesis to Molecular Compound 4&gt; The monomer 1 obtained in Example 1 was reacted with trifluoromethanesulfonic anhydride to obtain a monomer 1 of trifluoromethanesulfonate 〇.25 g and 1,4- 0.66 g of dibromo-2,5-bis(3,7-dimethyloctyloxy)benzene and 2,2,-bipyridinium. 61 g were dissolved in tetrahydrofuran (dehydrated) 40 g, and boiled in nitrogen. , carry out nitrogen exchange in the system. Bis(1,5-cyclooctadiene)nickel (0){Ni(C0D)2} l.lg was added to the solution and allowed to react at room temperature for 24 hours. Here, the reaction was carried out under a nitrogen atmosphere. Next, a mixed solution of 25% ammonia water 10 ml/methanol 30 ml/ion exchanged water 60 ml was added to the reaction liquid, and the mixture was stirred for about 1 hour. This solution was allowed to stand at room temperature overnight and then filtered to recover the resulting precipitate. Then, the precipitate was dried and dissolved in toluene. Filter to remove insolubles. Next, the solution was washed with 1 equivalent of hydrochloric acid, and then separated, and then washed with about 63 314723 1287570 2.5% ammonia water, and the liquid layer was layered to form an ionic benzene layer. Next, the obtained toluene solution was poured into methanol, and the resulting precipitate was recovered by washing with water, and purified by precipitation with methanol and Qinzhin% _ 〇 ^. Compound 0. The polymer obtained is referred to as "polystyrene of the polymer compound 4". The structure of the polymer compound 4 estimated by the package is not the structure of the product.

κ冬己挪換异之數八旦 4.7Χ 而重量平均分子量為7〇χ 1〇3。下:刀一子/為 實施例5 &lt;高分子化合物5之合成&gt; 將實施例1所得單體1與三氟甲烷磺酸酐反應所得單 體1之三氟甲烷磺酸酯〇.25g及3,7-二溴代-2,8-二辛氧夷 二苯并噻吩0.72g及2,2,-聯二吡啶〇.55g溶解在四氫D夫喃 (脫水)40g中後,在氮氣中沸騰,進行系内之氮氣交換。 在溶液中添加雙(1,5-環辛二烯)鎳(〇){Ni(COD)2}l.0g,在 室溫下反應24小時。在此,反應係在氮氣環境中進行。 64 314723 1287570 接著,對此反應液中,添加25%氨水i〇mi/曱醇3〇mi/ 離子交換水60ml混合溶液,並攪拌約i小時。將此溶液 在室溫下靜置一夜後過濾以回收所生成的沈澱。接著,將 此沈澱乾燥後,溶解在甲苯中。過濾以去除不溶物。其次,、 將該溶液以1當量濃度鹽酸洗淨、分液後,接著,以約2.5% 之氨水洗淨、分液此溶液後,使用離子交換水洗淨甲苯層。 其次’將戶斤得甲苯溶液注入甲冑中再力口以沈殿精t。^收 所生成的沈澱’使用甲醇洗淨後,經過減壓乾燥,製得聚 合物0.05g。將此所得的聚合物稱為高分子化合物5。 該高分子化合物5之聚苯乙烤換算之數平均分子量為 UXW,而重量平均分子量為1δχΐ〇4。下列表示從飼 裝物所推定的高分子化合物5所含反複單造。 ^21^ι〇0κ冬 has changed the number of different dandans to 4.8 Χ and the average weight molecular weight is 7〇χ 1〇3. Bottom: Knife I/Example 5 &lt;Synthesis of Polymer Compound 5&gt; The monomer 1 obtained in Example 1 was reacted with trifluoromethanesulfonic anhydride to obtain a trifluoromethanesulfonate 〇.25 g of the monomer 1 and 0.72g of 3,7-dibromo-2,8-dioctyloxydibenzothiophene and 2,2,-bipyridinium. 55g dissolved in 40g of tetrahydro D-propan (dehydrated), after nitrogen Boiling in the middle, nitrogen exchange in the system. Bis(1,5-cyclooctadiene)nickel (〇) {Ni(COD) 2} 1.0 g was added to the solution, and the mixture was reacted at room temperature for 24 hours. Here, the reaction was carried out in a nitrogen atmosphere. 64 314723 1287570 Next, a mixed solution of 25% aqueous ammonia i〇mi/sterol 3〇mi/ion-exchanged water in 60 ml was added to the reaction mixture, and the mixture was stirred for about 1 hour. This solution was allowed to stand at room temperature overnight and then filtered to recover the resulting precipitate. Then, the precipitate was dried and dissolved in toluene. Filter to remove insolubles. Next, the solution was washed with 1 equivalent of hydrochloric acid and separated, and then washed with about 2.5% ammonia water to separate the solution, and then the toluene layer was washed with ion-exchanged water. Secondly, the patient's toluene solution was injected into the hyperthyroidism. The resulting precipitate was washed with methanol and dried under reduced pressure to give a polymer (0.05 g). This obtained polymer is referred to as polymer compound 5. The polymer compound 5 has a number average polystyrene conversion of UXW and a weight average molecular weight of 1 δ χΐ〇4. The following shows repeated iterations of the polymer compound 5 estimated from the contents. ^21^ι〇0

ο OPC&quot;。 OC1ο OPC&quot;. OC1

實施例6 &lt;高分子化合物6之合成&gt; 氟曱烷磺酸酐反應所得單 將貫施例1所得單體1與 314723 65 1287570 體1之三氟甲烧石黃酸酸〇25g及3,7_二漠代_2,8_二辛氧基 二苯并噻吩〇.45gAN東雙(4-漠苯基)像雙(26_二; 基-4_第三丁基苯基)],4'伸笨基二胺〇.33g以及2,2,.聯二 吡啶0 ·5 5 g溶解在四氫咕吐/ w ,、 … A夫喃(脫水)40g中後,在氮氣中沸 騰,進订糸内之氮氣交換。在該溶液中添加雙(15環辛 二賴(o){N1(COD)2}1.0g,在室溫下反應40小’時:在 此,反應係在氮氣環境中進行。 β接=對此反應液中,添加甲醇5Gml/離子交換水編 之此合洛液’並攪拌約i小時。將此溶液在室溫下靜置一 收所生成的沈搬。接著,將此沈殿乾燥後, 2在甲本中。過濾、以去除不溶物後,將此溶液通過填充 有虱化鋁的管柱以精製。接著,⑯此溶液注入曱醇 以沈澱精製。回收所生成的沈澱,並使用乙醇洗淨後: 過減壓乾燥而得聚合物G.35g。將此所得的聚 ^ 分子化合物6。 轉為向 該高分子化合物6之聚苯乙烯換算之 裝物所推定的高分子化合物6所含重複單元之^造,甸 314723 66 1287570Example 6 &lt;Synthesis of Polymer Compound 6&gt; The reaction obtained by the reaction of fluorononanesulfonic anhydride was as follows: Monomer 1 obtained in Example 1 and 25 g of trifluoromethane sulphate and 3 in 314723 65 1287570. 7_二漠代_2,8_dioctyloxydibenzothiophene 〇.45gAN Dongshuang(4-Molyphenyl) like bis(26_2; phenyl-4_t-butylphenyl)], 4' succinyldiamine oxime. 33g and 2,2,. bisbipyridine 0 · 5 5 g dissolved in tetrahydro oxime / w, , ... A Fu (dehydration) 40g, boiled in nitrogen, Enter the nitrogen exchange in the crucible. To this solution was added bis(15 cyclooctane (o){N1(COD) 2} 1.0 g, and reacted at room temperature for 40 hours': here, the reaction was carried out in a nitrogen atmosphere. To the reaction solution, methanol (5Gml/ion exchange water was added to the solution) and stirred for about 1 hour. The solution was allowed to stand at room temperature for a sinking. Then, after drying the chamber, 2 In a medium. After filtering to remove insoluble matter, the solution is purified by passing through a column packed with aluminum telluride. Then, 16 of this solution is injected with decyl alcohol to precipitate and refine. The precipitate formed is recovered, and ethanol is used. After washing, the polymer G.35 g was obtained by drying under reduced pressure, and the obtained polymer compound 6 was converted into a polymer compound 6 estimated from the polystyrene equivalent of the polymer compound 6. Made with repeating units, Diandian 314723 66 1287570

HnC80 OC8H17HnC80 OC8H17

實施例7 &lt;吸收光譜、螢光光譜之測定&gt; 尚分子化合物1至6,均易於溶解在氯仿中。將其〇·2〇/ 氯仿溶液旋轉塗佈在石英板上以製作聚合物之薄膜:分别 使用島津製作所製自記分光光度計UV365及曰立製作所 衣螢光刀光光度計85〇測定此薄膜之紫外可視吸收光譜及 螢光色譜。 表1中表示高分子化合物丨至6之螢光峰值波長及相 對強度。 314723 67 1287570 表1 南分子化合物 1 2 3 4 5 6 m 8 螢光峰值波長(nm) 438 428 598 437 442 531 螢光強度(a.u.) 6.7 1.2 0.01 2.8 0.7 0.07 &lt;元件之製作及評估&gt; 在依濺鍍法按150nm厚度附著有IT〇膜的玻璃基板 上,使用聚(乙烯基二羥基噻吩)/聚苯乙烯磺酸之溶液(拜 耳社拜多隆(Baytron))依旋轉塗佈法按5〇nm之厚度成膜, 在加熱板上在/201下乾燥5分鐘。其次,使用高分子化 a物1之1.5wt(重1 )%甲苯溶液依旋轉塗佈法按之 厚度成膜。再者,冑此在減壓下8(rc下乾燥i小時後, 使氟化鋰沈積約4nm後,作為陰極而使鈣沈積約2〇nm, 接著使铭沈積約50nm以製作高分子LED。沈積時之真空 度均為1至8χ 10·6Τ〇ΓΓ(托)。對所得元件上施加電壓 可獲得從高分子化合物!的EL發光。發光起始電壓為約 7.6V(伏特)’而發光效率為最大約〇i4cd/A,最高亮度為 約i〇0cd/m2°EL峰值波長與高分子化合物i之薄膜Γ榮 光峰值波長略為-》,而經確認為來自高分子化合物 EL發光。 [產業上之利用可能性] …本發明之高分子化合物可作為發光材料使用。因而 。亥问刀子化合物可用為高分子led。該高分子可適 3]4723 68 1287570 合於作為背光的平面狀光源、扁平面顯示器(flat panel display)等之裝置。 69 314723Example 7 &lt;Measurement of absorption spectrum and fluorescence spectrum&gt; Both of the molecular compounds 1 to 6 were easily dissolved in chloroform. The 〇·2〇/chloroform solution was spin-coated on a quartz plate to prepare a film of the polymer: the UV of the film was measured using a self-recording spectrophotometer UV365 manufactured by Shimadzu Corporation and a fluorescent knife photometer 85 曰. Visible absorption spectroscopy and fluorescence chromatography. The fluorescence peak wavelengths and relative intensities of the polymer compounds 丨 to 6 are shown in Table 1. 314723 67 1287570 Table 1 South Molecular Compound 1 2 3 4 5 6 m 8 Fluorescence Peak Wavelength (nm) 438 428 598 437 442 531 Fluorescence Intensity (au) 6.7 1.2 0.01 2.8 0.7 0.07 &lt;Manufacture and Evaluation of Components&gt; On a glass substrate to which an IT tantalum film is attached by a sputtering method to a thickness of 150 nm, a solution of poly(vinyl dihydroxythiophene)/polystyrenesulfonic acid (Bayer) by spin coating method is used. Films were formed at a thickness of 5 〇 nm and dried on a hot plate at /201 for 5 minutes. Next, a 1.5 wt (weight 1)% toluene solution of the polymerized material 1 was used to form a film in accordance with the thickness by a spin coating method. Further, after drying under reduced pressure for 8 hours at rc, after depositing lithium fluoride to about 4 nm, calcium was deposited as a cathode to about 2 nm, and then about 50 nm was deposited to prepare a polymer LED. The degree of vacuum at the time of deposition is 1 to 8 χ 10·6 Τ〇ΓΓ (Torr). A voltage is applied to the obtained element to obtain EL luminescence from a polymer compound! The luminescence onset voltage is about 7.6 V (volts) and luminescence The efficiency is about 〇i4cd/A, and the highest luminance is about i〇0cd/m2° EL peak wavelength and the peak wavelength of the film of the polymer compound i is slightly--, and it is confirmed that it is emitted from the polymer compound EL. Advantages of use] The polymer compound of the present invention can be used as a light-emitting material. Therefore, the knives can be used as a polymer LED. The polymer can be used as a planar light source as a backlight, 3:4723 68 1287570 A device such as a flat panel display. 69 314723

Claims (1)

12875701287570 第 92114227 號專No. 92114227 利申請案 申請專利範圍修正本 一種高分子化合物,其特徵為·· 單几,而聚苯乙烯換算之數平均 (96年2月9曰) 含有式(1)所示的反複 分子量為1〇3至ι〇8, X1 — Χ2The patent application scope of the patent application is to modify the polymer compound, which is characterized by a single number, and the average number of polystyrene conversions (February 9, 1996) contains the repeated molecular weight shown in formula (1). 3 to ι〇8, X1 — Χ2 ⑴ [式中’ Ar1及Ar2分別猶打本-/你 刀乃J獨立表不4價之芳族烴基或 4價之雜環基; X1及X2表示任一方為c(=〇)或C(ri)(r2),而另一 方為 〇、s、c(=o)、Si(=0)、s〇2、Si(R3)(R4)、n(r5)、 B(P6)、P(R7)或 p(=〇)(R8); (式中,R1、R2、R3、r4、R5、R6、R7 以及 r8 分別 獨立表示氫原子、鹵素原子、烷基、烷氧基、烷硫基、 烷胺基、芳基、芳氧基、芳硫基、芳胺基、芳烷基、芳 基烷氧基、芳基烷硫基、芳基烷胺基、醯基、醯氧基、 醯胺基、亞胺基、取代甲石夕烧基、取代甲石夕烧氧基、取 代甲矽烷硫基、取代甲矽烷胺基、1價之雜環基、芳烯 基、芳乙炔基或氰基) Μ表示式(2)、式(3)或式(4)所表示的基; -Υ'-Υ2- (2) [式中,Υ1及Υ2分別獨立表示〇、s、c(=〇)、s(=〇)、 1 314723(修正本) 1287570 S〇2、C(R9)(R10)、Si(Rn)(R12)、N(R13)、B(R14)、P(R15) 或 P( = 0)(R16), (式中,R9、R10、R11、R12、R13、R14、R15 以及 R16 分別獨立表示氫原子、鹵素原子、烷基、烷氧基、烷硫 基、烷胺基、芳基、芳氧基、芳硫基、芳胺基、芳烷基、 芳基烷氧基、芳基烷硫基、芳基烷胺基、醯基、醯氧基、 醯胺基、亞胺基、取代甲矽烷基、取代甲矽烷氧基、取 代甲矽烷硫基、取代甲矽烷胺基、1價之雜環基、芳烯 基、芳基乙炔基或氰基)但,Y1為C(R9)(R1G)、Si(Ru)(R12) 以外時,Y1與Y2不會相同] -Y3=Y4- (3) [式中,Υ3及Υ4分別獨立表示Ν、Β、Ρ、C(R17) 或 Si(R18), (式中,R17及R18分別獨立表示氫原子、鹵素原子、 烷基、烷氧基、烷硫基、烷胺基、芳基、芳氧基、芳硫 基、芳胺基、芳烷基、芳基烷氧基、芳基烷硫基、芳基 烷胺基、醯基、醯氧基、醯胺基、亞胺基、取代甲矽烷 基、取代甲矽烷氧基、取代甲矽烷硫基、取代甲矽烷胺 基、1價之雜環基、芳烯基、芳基乙炔基或氰基)] -Y5- (4) [式中,Y5 表示 〇、S、c(=0)、s(=0)、so2、 C(R19)(R20)、Si(R21)(R22) ' n(R23)、B(R24)、P(R25)或 P( = 0)(R26), (式中,R19、R20、R21、R22、r23、r24、r25 以及 314723(修正本) 2 1287570 R26分別獨立表示氫原子、鹵素原子、烷基、烷氧基、 烷硫基、烷胺基、芳基、芳氧基、芳硫基、芳胺基、芳 烧基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯基、 氧基、醯胺基、亞胺基、取代甲石夕烧基、取代甲石夕燒 氧基、取代甲矽烷硫基、取代甲矽烷胺基、1價之雜環 基、芳烯基、芳基乙炔基或氰基)] 21表示_匸1136 = 〇1137-或_(:三(:-,1136及1^7分別獨立 表示氫原子、烷基、芳基、1價之雜環基或氰基,d表 不〇或1 ]。 2·如申請專利範圍第1項之高分子化合物,其中,式(1 中,Μ係式(2)所示者。 3.如申請專利範圍f 2項之高分子化合 中,^】及^係鍵結在Arl之芳環碳之相鄰接位置,χ 及2ΑΓ係鍵結在Ar2之芳環碳之相鄰接位置,而Υι及 Ar係鍵結在Ar1 $ # # # &gt; i + 之方J衣妷之相鄰接位置,Y2及Ari係 鍵…在Ar之芳環碳之相鄰接位置。 4·如申請專利範圍第丨 分子化合物,其中,在式=項第3項中任-項之高 5.如申請專利範圍第工 ,Ar及Ar2係苯環者。 '寻矛J乾圍苐4項之高分 中,γ1及X2為(c=0)者。 八中在式α &amp;:申:專利範圍第5項之高分子化合物 中,Υ1及χ2為(c=〇), :中在式⑴ 7.如申請專利範圍第、第/X為〇(氣原子)者。 分子化合物,2項或第3項中任-項之高 -中,在式⑴所示的反複單元 314723(修正本) 3 1287570 全反複單元之10莫耳%以上者。 8·如申請專利範圍第i項、第2項或第3項中任一項之高 分子化合物,其中,係具有液晶性者。 9.如申請專利範圍帛!項、第2項或第3項中任_項之高 分子化合物,其中,在固體狀態下具有螢光者。门 1〇.一種高分子電子元件’其特徵為:含有巾請專利範圍第 1項至第9項之高分子化合物。 u. 一種南分子發光元件,其特徵為:在由陽極及陰極而成 的電極間具有發光層,而該發光層含有申請專利範圍第 1項至第9項中任-項之高分子化合物。 1 2·種平面狀光源,其特徵為:含;^ φ | &gt; s有申凊專利範圍第11 項之兩分子發光元件。 13· 一種段顯示裝置,其特徵為· 、行做為·含有申請專利範圍第U 項之高分子發光元件。 14 · 一種點矩陣顯示裝置,其 _ 、政為:含有申請專利範圍第 11項之高分子發光元件。 $ $ 15· 一種液晶顯示裝置,其特徵 ^ ν τ 戊為·以申請專利範圍第11 項之咼分子發光元件作為背光。 314723(修正本) 4(1) [In the formula, Ar1 and Ar2 are still hitting this--you are a separate aromatic hydrocarbon group or a tetravalent heterocyclic group in which J is independently represented; X1 and X2 indicate that either side is c(=〇) or C ( Ri)(r2), and the other is 〇, s, c(=o), Si(=0), s〇2, Si(R3)(R4), n(r5), B(P6), P( R7) or p(=〇)(R8); (wherein, R1, R2, R3, r4, R5, R6, R7 and r8 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group , alkylamino, aryl, aryloxy, arylthio, arylamino, aralkyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, decyloxy, hydrazine Amine, imine, substituted formazan, substituted formazanoxy, substituted forylidenethio, substituted forylideneamino, monovalent heterocyclic, aralkenyl, arylethynyl or cyanide )) represents a group represented by formula (2), formula (3) or formula (4); -Υ'-Υ2- (2) [wherein, Υ1 and Υ2 independently represent 〇, s, c (=〇 ), s(=〇), 1 314723 (amendment) 1287570 S〇2, C(R9)(R10), Si(Rn)(R12), N(R13), B(R14), P(R15) or P( = 0)(R16), (where R9, R10, R1 1. R12, R13, R14, R15 and R16 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamine group, Aralkyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, decyloxy, decylamino, imido, substituted, carboxyalkyl, substituted, methoxyalkyl, substituted a decylthio group, a substituted megrolylamino group, a monovalent heterocyclic group, an arylalkenyl group, an arylethynyl group or a cyano group. However, when Y1 is other than C(R9)(R1G) or Si(Ru)(R12) , Y1 and Y2 will not be the same] -Y3=Y4- (3) [wherein, Υ3 and Υ4 respectively represent Ν, Β, Ρ, C(R17) or Si(R18), where R17 and R18 respectively Independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamino group, an aralkyl group, an aryl alkoxy group, an aryl group. Alkylthio, arylalkylamino, fluorenyl, decyloxy, decylamino, imido, substituted, carboxyalkyl, substituted, carboxyalkyloxy, substituted, methanylthio, substituted, dimethylamino, monovalent Heterocyclic, aralkenyl, aryl Alkynyl or cyano)] -Y5- (4) [wherein Y5 represents 〇, S, c(=0), s(=0), so2, C(R19)(R20), Si(R21)( R22) ' n(R23), B(R24), P(R25) or P( = 0)(R26), (wherein, R19, R20, R21, R22, r23, r24, r25 and 314723 (amendment) 2 1287570 R26 independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamine group, an arylalkyl group, an arylalkoxy group. Alkyl, arylalkylthio, arylalkylamino, fluorenyl, oxy, decylamino, imido, substituted formazan, substituted formazanoxy, substituted forylidenethio, substituted Methymidine, monovalent heterocyclic, aralkenyl, arylethynyl or cyano)] 21 represents _匸1136 = 〇1137- or _(: three (:-, 1136 and 1^7 are independent Represents a hydrogen atom, an alkyl group, an aryl group, a monovalent heterocyclic group or a cyano group, and d represents no or 1]. 2. The polymer compound according to the first item of the patent application, wherein, in the formula (1, the formula is represented by the formula (2). 3. In the polymer compounding of the patent range f 2, ^] and ^ The bond is bonded to the adjacent position of the aromatic ring carbon of Arl, the χ and 2ΑΓ are bonded to the adjacent position of the aromatic ring carbon of Ar2, and the Υ and Ar are bonded to Ar1 $ # # # &gt; i + The adjacent position of the J 妷 ,, Y2 and Ari ... ...... in the adjacent position of the aromatic ring carbon of Ar. 4 · As claimed in the patent range 丨 molecular compound, wherein, in the formula = item 3 The height of the Ren-item 5. If the patent application scope is the first, the Ar and Ar2 are benzene rings. 'In the high score of 4 items of the stalking J dry coffer, γ1 and X2 are (c=0). Formula α &amp;: Application: In the polymer compound of the fifth item of the patent range, Υ1 and χ2 are (c=〇), :in the formula (1) 7. As claimed in the patent scope, /X is 〇 (gas atom) The molecular compound, the high of any of the two items or the third item, is in the repeating unit 314723 (amendment) shown in the formula (1), and the 10 1287570 full repeating unit is 10 mol% or more. Patent item i The polymer compound according to any one of the items 2 or 3, wherein the polymer compound is liquid crystal. 9. The polymer compound according to any one of the claims, the second item or the third item, Among them, there is a fluorescent material in a solid state. Door 1〇. A polymer electronic component 'characterized by: a polymer compound containing the towel range 1 to 9 of the patent. u. A southern molecular light-emitting element, It is characterized in that a light-emitting layer is provided between the electrodes formed by the anode and the cathode, and the light-emitting layer contains the polymer compound of any one of items 1 to 9 of the patent application. The feature is as follows: ^ φ | &gt; s has the two-molecule light-emitting element of claim 11 of the patent scope. 13· A segment display device, characterized by ·, as a · containing the U of the patent application scope Polymer light-emitting device 14 · A dot matrix display device, which is: a polymer light-emitting device containing the patent application scope item 11. $ $15· A liquid crystal display device characterized by ^ν τ 为Patent application area 11 The molecular light-emitting element is used as a backlight. 314723 (Revised) 4
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