TW200403327A - Polymer compound and polymer luminescent element using the same - Google Patents

Polymer compound and polymer luminescent element using the same Download PDF

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TW200403327A
TW200403327A TW092114227A TW92114227A TW200403327A TW 200403327 A TW200403327 A TW 200403327A TW 092114227 A TW092114227 A TW 092114227A TW 92114227 A TW92114227 A TW 92114227A TW 200403327 A TW200403327 A TW 200403327A
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TWI287570B (en
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Takanobu Noguchi
Yoshiaki Tsubata
Chizu Sekine
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Sumitomo Chemical Co
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Abstract

A polymer compound is provided. The polymer compound is characterized by containing one repeating unit represented by the formula (1), and having a polystyrene-reduced number average molecular weight of 103 to 108. wherein Ar1 and Ar2 each represent an aromatic hydrocarbon group or a heterocyclic group; X1 and X2 represent C(=O) or C(R1)(R2) for one, and O, S or C(=O) for another one; M represents O-C(=O), C(=O)-O, O, S, C(=O) or the like; Z1 represents-CR=CR-or-C ≡ C-; and d represents 0 or 1.

Description

200403327 玫、發明說明 [發明所屬之技術領域] 本發明有關高分子化合物及使用該高分子化合物之高 7刀子务光兀件(以下,亦簡稱高分子LED(發光二極體)。)。 [先前技術] 方了 曰 ^ 77 s之發光材料,係與低分子量之發光材料 不同此’合方;,谷媒中且可依塗佈法而形成使用發光元件的 發光層之故,右作夕0日 夺 α欲夕關於此方面之研究,例如,周知有聚 中苯土申^焊仿生物、聚芴衍生物、聚伸苯基衍生物等。 又’關於構成聯苯環的芳香環之鄰位間相互鍵結 由 1至3 4固;^ 『 ,、或原子群而具有形成5至7員環的構造的 聯苯衍生物而士— <以再k的 物而3,在W〇(世界專利)〇1/96454 下式所示的高分子化合物。 1丁有如200403327 Rose, description of the invention [Technical field to which the invention belongs] The present invention relates to a polymer compound and a high-light-emitting device using the polymer compound (hereinafter, also referred to as a polymer LED (light emitting diode).). [Prior art] The light emitting material of ^ 77 s is different from the low molecular weight light emitting material; the reason is that the light emitting layer using the light emitting element can be formed in the grain medium according to the coating method. On the 0th, the research on this aspect was carried out. For example, there are well-known polyphenylene oxides, polyfluorene derivatives, polyphenylene derivatives, etc. And 'about the mutual bonding between the ortho positions of the aromatic rings constituting the biphenyl ring is fixed from 1 to 3 4; ^ ", or a group of atoms and a biphenyl derivative having a structure that forms a 5 to 7 member ring — & lt A polymer compound represented by the following formula: W (World Patent) 01/96454. 1 Ding Youru

RkRk

cw 卿 m=cR 在此記載有以廿古八 —N-、_(C〇)〜, 混合全屬離 °刀化’物作為基質(matrix),而對 至屬離子以形成發光層者。 又,在曰本專利特開平8_815 四氯[2,7-二基)衍生物。 揭不有MW, [發明内容] 本發明者等,就能作為發光材料使用的新賴的高分 314723 200403327 化合物專心研究的結果,發現 甘夂设早兀中具有2個芳 衣而具有此等芳環以特定鍵結所g a , 子化合物,適用於發光材料咬二合而成的構造之高分 於完成本發明。 嶋-何傳輸材料等的事實,终 亦即,本發明係有關含有式 取贫^ p & 一 $式(1)所不的反複單元,以· 來本乙烯換鼻之數平均分 工儿人 卞]刀于里為U 1〇3至lx 108的高分 子化合物。 77cw qing m = cR It is described here that the ancient VIII-N-, _ (C〇) ~, mixed all belong to the knife knife as a matrix (matrix), and the ions to form a light-emitting layer. In addition, Japanese Patent Laid-Open No. 8-815 tetrachloro [2,7-diyl) derivative. No MW, [Inventive Content] The inventors, etc., can use Xinlai's high score 314723 200403327 as a light-emitting material. As a result of intensive research, it was found that there are 2 fragrant clothes in Gansu Wuwu. The aromatic ring is bonded with a specific bond, and the sub-compound is suitable for the structure obtained by biting the light-emitting material to complete the present invention. The fact that 嶋 -He transmits materials and so on, that is, the present invention is related to the recurrence unit containing the formula to eliminate poverty ^ p & $ 1 (1), and the average number of workers who use ethylene to change the nose is卞] The knife is a polymer compound of U 103 to lx 108. 77

X1 ——X2X1-X2

[式中,Ar1及Ar2分別猸☆本-/成 乃J獨立表不4價之芳族烴基 價之雜環基。 4 χΐ及X2表示任一方為c(=〇)或C(R1)(R2)而另—方 、Si(R3)(R4)、n(r5)、B(R6)、 為 Ο、S、C( = 〇)、s( = 〇)、s〇 P(R7)或 P( = 0)(R8)。] (式中m R4、R5、R6、R7以及r8分別獨 立表示氮原子、i素原+、烷基、烷氧基、烷硫基、烷胺 基、芳基、芳氧基、芳硫基、芳胺基、芳烷基、芳基烷氧 基、芳基:):完硫基、芳基烧胺基、醯基、酿氧基、gi胺基,、 亞胺基、取代曱矽烷基、取代甲矽烷氧基、取代甲矽烷硫 基、取代曱矽烷胺基、1價之雜環基、芳烯基、芳基乙炔 基或氰基。) Μ表示式(2)、式(3)或式(4)表示之基。 6 314723 200403327 [式中,Y1及Y2分別獨立表示〇、S、c(==〇)、S卜⑺、 S02、C(R9)(R丨ο)、Si(R】】)(Ri”、N(R丨”、B(R1 ”、p(R〗5) 或 P〇〇)(R16)。 (式中,R9、R10、Rn、Ru、、R15 以及 r16 分別獨立表示氫原子、鹵素原子、烷基、烷氧基、烷硫基、 烷胺基、芳基、芳氧基、芳硫基、芳胺基、芳烷基、芳基 火元氧基、务基:):完硫基、务基烧胺基、酷基、酸氧基、醯胺 基、亞胺基、取代甲矽烷基、取代甲矽烷氧基、取代甲石夕 烷硫基、取代曱矽烷胺基、1價之雜環基、芳烯基、芳基 乙炔基或氰基。)但,Y1為C(R9)(Ri〇)、Si(RU)(R丨2)以外 時,Y1與γ2不會相同。] -Υ3 = Υ4 一 (3) [式中,Υ3及Υ4分別獨立表示Ν、Β、Ρ、C(R17)或 Si(R18)。 (式中,R17及R18分別獨立表示氫原子、鹵素原子、 烧基、烧氧基、烧硫基、燒胺基、芳基、芳氧基、芳硫基、 芳胺基、芳:):完基、芳基:):完氧基、芳基烷琉基、芳基:):完胺基、 基、氧基、S藍胺基、亞胺基、取代曱石夕烧基、取代曱 矽烧氧基、取代曱石夕烧硫基、取代甲矽烧胺基、1價之雜 環基、芳烯基、芳基乙炔基或氰基。)] - Y5- (4) [式中,丫)表示〇、8、(^卜〇)、8(二〇)、8〇2、(^(11】9)(以20)、 SURUKR22)、N(R23)、B(RH)、P(R25)或 P( = 0)(R26)。 314723 7 200403327 U中 Hr2G、r21'r22、r23、r24、r25^r2^ 別獨立表示氫原子、齒素原+、烷基、烷氧基、烷硫基刀、 烧胺基、芳基、芳氧基、芳硫基、芳胺基、芳炫基、芳基 烷氧基、芳基烷硫基、芳基烷胺基、醯基、醯氧基、醯胺 基、亞胺基、取代曱矽烷基、取代甲矽烷氧基、取代甲矽 烷硫基、取代甲矽烷胺基、丨價之雜環基、芳烯基、芳基 乙炔基或氰基。)] ^乙表示R37分別獨立表示 風原子、烷基、芳基、1價之雜環基或氰基。d表示〇或 [實施方式] 以下’就本發明之高分子化合物及使用該高分子化合 物之高分子發光元件加以詳細說明。 式(1)中,Ar1及Ar2分別獨立表示4價之芳族烴基或 4價之雜環基。Ar1及Ar2之雙方則以4價之芳族烴基者 為佳’雙方更以單環性之4價之芳族烴基者為更佳。 在此’ 4價之芳族烴基係指從苯環或稠環去除4個氫 原子後所剩的原子團之意,通常為碳數6至6〇,較佳為6 至20,可例示如下述之化合物。在此,在芳族烴基上可 具有取代基,而取代基可例示如··鹵素原子、羥基、烧基、 烷氧基、烷硫基、烷胺基、芳基、芳氧基、芳硫基、芳胺 基、芳烧基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯 基、醯氧基、醯胺基、亞胺基、取代曱矽烷基、取代曱石夕 烧氧基、取代甲矽烷硫基、取代甲矽烷胺基、1價之雜環 8 3)4723 200403327 基、芳烯基、芳基乙炔基或氰基。4價之〜 中,不包含取代基之碳數。 貝芳族烴基之碳數 4元芳族烴基可例示如下者。[In the formula, Ar1 and Ar2 are respectively 猸 ☆ Ben- / cheng is a heterocyclic group having a valence of a 4-valent aromatic hydrocarbon group independently of J. 4 χΐ and X2 indicate that either one is c (= 〇) or C (R1) (R2) and the other one is Si (R3) (R4), n (r5), B (R6), and 0, S, C (= 〇), s (= 〇), sO (R7) or P (= 0) (R8). (Where m R4, R5, R6, R7, and r8 each independently represent a nitrogen atom, a proton +, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, and an arylthio group. , Arylamino, aralkyl, arylalkoxy, aryl :): thio, aryl, amine, fluorenyl, aryloxy, giamino, imino, substituted silyl , Substituted silyloxy, substituted silylthio, substituted fluorsilylamino, monovalent heterocyclic group, arylalkenyl, arylethynyl, or cyano. ) M represents a base represented by formula (2), formula (3), or formula (4). 6 314723 200403327 [where Y1 and Y2 independently represent 0, S, c (== 〇), S ⑺, S02, C (R9) (R 丨 ο), Si (R)]) (Ri ”, N (R 丨 ”, B (R1”, p (R 〖5) or P〇〇) (R16). (Where R9, R10, Rn, Ru, R15 and r16 each independently represent a hydrogen atom, a halogen atom , Alkyl, alkoxy, alkylthio, alkylamino, aryl, aryloxy, arylthio, arylamino, aralkyl, arylcarbooxy, amine :): thiothio , Carbamoyl, acyl, acidoxy, amido, imino, substituted silyl, substituted siloxy, substituted methylsilylthio, substituted silylamino, monovalent Heterocyclyl, arylalkenyl, arylethynyl, or cyano.) However, when Y1 is other than C (R9) (Ri0), Si (RU) (R 丨 2), Y1 and γ2 are not the same.] -Υ3 = Υ4 one (3) [wherein Υ3 and Υ4 each independently represent N, B, P, C (R17) or Si (R18). (Wherein, R17 and R18 each independently represent a hydrogen atom, a halogen atom, Carbo, oxy, thio, amine, aryl, aryloxy, arylthio, arylamino, aryl :): cumyl, aryl :) : Pentyloxy, arylalkynyl, aryl :): pentylamine, aryl, oxy, S-blueamine, imide, substituted vermiculite, substituted silyloxy, substituted fluorene Ishigaki thio group, substituted silylamine group, monovalent heterocyclic group, arylalkenyl group, arylethynyl group or cyano group.)]-Y5- (4) [wherein, y) represents 0, 8 , (^ 卜 〇), 8 (two), 802, (^ (11) 9) (to 20), SURUKR22), N (R23), B (RH), P (R25), or P (= 0) (R26). 314723 7 200403327 U in Hr2G, r21'r22, r23, r24, r25 ^ r2 ^ Don't independently represent hydrogen atom, protogen +, alkyl group, alkoxy group, alkylthio group knife, burned amine Aryl, aryl, aryloxy, arylthio, arylamino, arylxyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, fluorenyl, fluorenyl, Imino, substituted fluorinyl silyl, substituted silyloxy, substituted silylthio, substituted silylamino, valence heterocyclic group, arylalkenyl, arylethynyl, or cyano.)] ^ B R37 each independently represents a wind atom, an alkyl group, an aryl group, a monovalent heterocyclic group or a cyano group. D represents 0 or [Implementation [Formula] Hereinafter, the polymer compound of the present invention and a polymer light-emitting device using the polymer compound will be described in detail. In the formula (1), Ar1 and Ar2 each independently represent a tetravalent aromatic hydrocarbon group or a tetravalent heterocyclic ring. Both Ar1 and Ar2 are more preferably a 4-valent aromatic hydrocarbon group, and both are more preferably a monocyclic 4-valent aromatic hydrocarbon group. Here, a tetravalent aromatic hydrocarbon group refers to benzene. The meaning of the remaining atomic group after the ring or fused ring has been removed by 4 hydrogen atoms is usually 6 to 60 carbon atoms, preferably 6 to 20 carbon atoms, and the following compounds can be exemplified. Here, the aromatic hydrocarbon group may have a substituent, and examples of the substituent include a halogen atom, a hydroxyl group, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, and an arylthio group. Base, arylamino, arylalkyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, fluorenyloxy, fluorenylamino, imino, substituted silyl, substituted fluorenyl Ishigamine, substituted silylthio, substituted silylamino, monovalent heterocyclic ring 8 3) 4723 200403327 group, arylalkenyl, arylethynyl or cyano. The number of carbons in the substituents is not included in the valences of valence to valence. Carbon number of the shell aromatic hydrocarbon group The 4-membered aromatic hydrocarbon group can be exemplified as follows.

又,4價之雜 後所剩下的原子gj 至2 0。且在雜環基 雜環基之碳數中, 壤基係指從雜環化合物去除4個氫原子 之意’而碳數通常為4 i 60,較佳為4 上可具有與芳_基時之相同取代基。 不包含取代基之碳數。 314723 9 200403327 在此’雜環化合物係 中 氮 構成環的元f不僅A山曰 造的有機化合物之 磷、 ”僅為妷原子,尚在環内含有氧、硫、 一.、石夕、碼等雜原子者之意。 -元_環基可例示如下述者。 、·含氮的4元雜環基之雜原子可例示如:吼。定四基(如 下述式(16))、二氮雜苯四基(如下述式(17))、喹啉四基(如 下述式(18))、喹喔林四基(如下述式(19))、吖啶四基(如下 述式(20))、菲繞啉四基(如下述式(21))等。In addition, the atoms gj to 20 remaining after the valence of the four valences. And in the carbon number of a heterocyclyl heterocyclyl, a phosphyl means the meaning of removing 4 hydrogen atoms from a heterocyclic compound, and the carbon number is usually 4 i 60, preferably 4 when it may have an aryl group. The same substituents. Does not include carbon number of substituents. 314723 9 200403327 In this heterocyclic compound system, the element f of nitrogen constituting the ring is not only the phosphorus of the organic compound made by A, but is only a halogen atom, but also contains oxygen, sulfur, I., Shi Xi, code in the ring. The meaning of those who are waiting for a heteroatom. -Member_ring group can be exemplified as follows: · Nitrogen-containing 4-membered heterocyclic group can be exemplified as: Hou. Definite four groups (such as the following formula (16)), two Azabenzenetetrayl (such as the following formula (17)), quinoline tetrayl (such as the following formula (18)), quinoxaline tetrayl (such as the following formula (19)), acridine tetrayl (such as the following formula ( 20)), phenanthroline tetrayl (such as the following formula (21)) and the like.

含矽、氮、氧、硫、硒等雜原子且具有芴構造的基(如 下述式(22)、(23))。 含矽、氮、氧、硫、硒等雜原子的5員環雜環基··可 例系如(下述式(24))。 含石夕、氮、氧、硫、硒等雜原子的5員環縮合雜環基: 示如(下 述式(25))。A group containing a hetero atom such as silicon, nitrogen, oxygen, sulfur, and selenium and having a europium structure (such as the following formulae (22) and (23)). Examples of the 5-membered ring heterocyclic group containing heteroatoms such as silicon, nitrogen, oxygen, sulfur, and selenium are as follows (the following formula (24)). A 5-membered ring condensed heterocyclic group containing heteroatoms such as stone, nitrogen, oxygen, sulfur, and selenium: as shown below (formula (25) below).

314723 200403327314723 200403327

(2 0) 11 314723 200403327(2 0) 11 314723 200403327

314723 200403327314723 200403327

(2 5) 上述式中,R’分別獨立表示氫原子、鹵素原子、烷基、 烷氧基、烷硫基、烷胺基、芳基、芳氧基、芳硫基、芳胺 基、芳烷基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯 氧基、醯胺基、芳基烯基、芳基炔基、1價之雜環基或氰 314723 200403327 基。Rn分別獨立表示氫原子、烷基、芳基、芳烷基、取 代甲矽烷基、醯基、或1價之雜環基。 X1及Αι·2以鍵結在Αι」之芳環碳之相鄰接位置,X2 及Αι· 1以鍵結在Ar2之芳環碳之相鄰接位置者為佳。 -X1 - X --可例不如下列者。 _C —O—(2 5) In the above formula, R 'each independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamino group, an aromatic group Alkyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, fluorenylamino, arylalkenyl, arylalkynyl, monovalent heterocyclic or cyano 314723 200403327 . Rn each independently represents a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, a substituted silyl group, a fluorenyl group, or a monovalent heterocyclic group. X1 and Al · 2 are preferably bonded to adjacent positions of the aromatic ring carbon of Al, and X2 and Alm · 1 are preferably bonded to adjacent positions of the aromatic ring carbon of Ar2. -X1-X-Examples are worse than the following. _C —O—

S I OMCS I OMC

OM OM OHS I one of -ϋ—Si—OM OM OHS I one of -ϋ—Si—

6 一 R—B I OMC R7 _C—p—6-R—B I OMC R7 _C—p—

onsMO OOP——R 1 I one OMC R11cIR - * _ 3 - 4 o R——si——R 1 Γ _ RI-cIRR1丨 C—R2 s 2^. 1P1c--R2 5 R—onsMO OOP——R 1 I one OMC R11cIR-* _ 3-4 o R——si——R 1 _ RI-cIRR1 丨 C—R2 s 2 ^. 1P1c--R2 5 R—

N R11c―-r2r1丨c―-R2N R11c―-r2r1 丨 c―-R2

OMC 6 R丨OMC 6 R 丨

.B.B

R o=-sr7_p- I iric-—r2 —CIR2R o = -sr7_p- I iric-—r2 —CIR2

R c―-r2r1丨c―R2R c―-r2r1 丨 c―R2

ΟΠ8ΠΟ oypIR 以 中 其 0 I one s I oneΟΠ8ΠΟ oypIR in which 0 I one s I one

OMC I OMC s 1PIcl-- o R1丨c-f one R1——cl 〇 f N I -c 一 Si 一 ofOMC I OMC s 1PIcl-- o R1 丨 c-f one R1——cl 〇 f N I -c one Si one of

π I *C~N— ofπ I * C ~ N— of

ii I *C一B— R1 R3 -C—Si- R1 R5 R1 R6 C—Isl— C—B— 為佳0 -X丨-X2-以 ]4 314723 200403327 οii I * C-B— R1 R3 -C—Si- R1 R5 R1 R6 C—Isl— C—B— preferably 0 -X 丨 -X2- to] 4 314723 200403327 ο

II c — ο 或 R1II c — ο or R1

I —c— o — 為佳, 以 οI —c— o — preferably, ο

II —c— 〇 — 為更佳。 _γΐ_γ2_可例示如下列者。 314723 200403327 O II —o—c— one I one - I OMC - s oneo=8—=c> - I OMC - ous 1 1 one 3R1·II —c— 〇 — is better. _γΐ_γ2_ can be exemplified as follows. 314723 200403327 O II —o—c— one I one-I OMC-s oneo = 8— = c >-I OMC-ous 1 1 one 3R1 ·

IN oneIN one

one ί I R丨B 5 R1 OMC - p R9丨( sone ί I R 丨 B 5 R1 OMC-p R9 丨 (s

11112 R—s·— R o 9 ,1rr· • ilR1011112 R—s · — R o 9, 1rr · • ilR10

3 I R1l-N R9丨c―1P R—3 I R1l-N R9 丨 c―1P R—

ο II R9 —c-c- R9丨 c.Ions • p o —R1 R]UR14 R9 —U- o 9 t1R flf 15 R1·ο II R9 —c-c- R9 丨 c.Ions • p o —R1 R] UR14 R9 —U- o 9 t1R flf 15 R1 ·

OMP—1P onsMO o: I oneOMP—1P onsMO o: I one

R 10 .i—R10 R9丨f:R10R9l-c· o —R1 oR 10 .i—R10 R9 丨 f: R10R9l-c · o —R1 o

11112 R—siIR R丨 s •TTR1211112 R—siIR R 丨 s • TTR12

3 - r1in 11112 RIsi——R3-r1in 11112 RIsi-R

14- R1IB 1 I 2 R—si—R14- R1IB 1 I 2 R—si—R

5 I R1-p 11一12 R——si——R R1 I -0-B- R1 I •S一B· r13 r145 I R1-p 11-1 12 R——si——R R1 I -0-B- R1 I • S-B · r13 r14

一N一BOne N one B

15IR11p i 一 RIB15IR11p i-RIB

oy Dv 4 ^ R1——B R. pI o 15I R-pIsoy Dv 4 ^ R1——B R. pI o 15I R-pIs

15I R—p 3 - R1丨-N oy i I < 4 R—si— R 1 _ 2 R1lsi—R1 9 Rt15I R—p 3-R1 丨 -N oy i I < 4 R—si— R 1 _ 2 R1lsi—R1 9 Rt

I10 c*— R 9 - ^ p—c ——R 0=0--RIs 以 中 其 16 314723 200403327 one Io one- s one-one 9 R_ sI10 c * — R 9-^ p—c ——R 0 = 0--RIs or less 16 314723 200403327 one Io one- s one-one 9 R_ s

o 11R r£ic—r fl9I-C―-R1 one one l ” -u 9 I S Risi—R R——c——R | I - ons ? 0I π —N— C-o 11R r £ ic—r fl9I-C―-R1 one one l ”-u 9 I S Risi—R R——c——R | I-ons? 0I π —N— C-

11I12 R——si——R 9 R· ’i—R1011I12 R——si——R 9 R · ’i—R10

3 _ R1丨-N 9 R, c丨3 _ R1 丨 -N 9 R, c 丨

0 1 丨R 11112 R—si—R I 0 11112 R—s—R I s0 1 丨 R 11112 R—si—R I 0 11112 R—s—R I s

3 * r1in 11112 R—si—R R'lsilR13 * r1in 11112 R—si—R R'lsilR1

Hi 1 - 1R1SI—R1 R9丨C-I1R r9_c-ir10 為佳。 - Y3 = Y4-可例示如下列者 —Ν 二Β— -Ν=Ρ一Hi 1-1R1SI—R1 R9 丨 C-I1R r9_c-ir10 is preferred. -Y3 = Y4- can be exemplified as the following-Ν 二 Β--Ν = Ρ 一

N = C— fW -N=Si-N = C— fW -N = Si-

R 18 B=P— •B=C— B=Si— —p=c—R 18 B = P— • B = C— B = Si— —p = c—

R 17R 17

R 18R 18

R 17 •P=Si-R 17 • P = Si-

R 18 *C=Si— R17 R18 其中,從化合物之安定性之觀點來看,則以 -N = C— •B=C—R 18 * C = Si— R17 R18 Among them, from the viewpoint of the stability of the compound, -N = C— • B = C—

R 17 —P=C — -C = Si— R17 R18 為佳 -Y、可例示如下列者。 17 3I4723 200403327 Ο 〇 〇 一〇一 S— 一C一 一S一 8— II 0R 17 —P = C — -C = Si— R17 R18 is preferably -Y and can be exemplified as follows. 17 3I4723 200403327 〇 〇 〇 〇 One S— One C One One S One 8— II 0

~~^Si一 R22 Γ~~ ^ Si 一 R22 Γ

N ΓΒ— Γ ΟΠΠΡN ΓΒ— Γ ΟΠΠΡ

6 2 • IR 其中,以:6 2 • IR where:

R21 R23R21 R23

I I —Si— —m— 式(1)中,M為-Y]-Y2-,而Y1及Ar2以鍵結在Ai」之 芳環碳之相鄰接位置,Y2及Ai*1鍵結在Ar2之芳環碳之相 鄰接位置為佳。 式(1)中,以Μ為-Υ^Υ2-,Y1及X2為C(二0)為佳。 在-Υ^Υ2-及-Χ^Χ2-的組合上,-Υ^Υ2-及-Χ^Χ2-在反 複單元中,芳環之鄰位間相互結合以成為C2對稱基為佳, 以-Υ】-Υ2_為 0 .丨丨 —〇 —-C- H2-為 0II —Si— —m— In formula (1), M is -Y] -Y2-, and Y1 and Ar2 are bonded to adjacent positions of the aromatic ring carbon of Ai ", and Y2 and Ai * 1 are bonded to The adjacent position of the aromatic ring carbon of Ar2 is preferable. In the formula (1), M is -Μ ^ Υ2-, and Y1 and X2 are preferably C (20). On the combination of -Υ ^ Υ2- and-× ^ χ2-, -Υ ^ Υ2- and -Χ ^ χ2- In the repeating unit, it is preferable that the adjacent positions of the aromatic rings combine with each other to form a C2 symmetrical group, with- Υ】 -Υ2_ is 0. 丨 丨 —〇—-C- H2- is 0

II —C — 〇 - 為佳。 本發明中高分子化合物所具有之可以式(1)表示的反 18 314723 200403327 複單儿,以A!」、Αι:2為苯環為者,又以式者為更佳II —C — 〇-better. In the present invention, the polymer compound has an inverse formula that can be expressed by formula (1). 18 314723 200403327 is a complex formula, where A! "And Aι: 2 are benzene rings, and the formula is more preferable.

[式中,R-、R28、R29以及R3〇分別獨立表示氫原子 Μ基、函素原子、烷基、烷氧基、烷硫基、烷胺基、芳基 芳氧基、芳硫基、芳胺基、 硫基、芳基烧胺基、基、 取代甲矽烷胺基、芳烯基、 基或氰基。R27與R28可連結 結而形成環。Z2表示_CR38 = 別獨立表示氫原子、烷基、 表示〇或1。1 芳烧基、芳基烷氧基、芳基烷 取代羧基、取代甲矽烷硫基、 芳炔基、芳胺基、丨價之雜環 而形成環,或R29與R3〇可連 CR:9-或·〇Ξ C-。R38 及 R39 分 芳基、1元雜環基或氰基。e Z】表示 _CR36=:(^p37 屮 ^ ^ 一卜 R -或—c_。R36及R37分別獨立声 不氫原子、烷美、—甘 刀μ殉立表 或丨。 土、方土、1價之雜環基或氰基。d表示〇[In the formula, R-, R28, R29, and R30 each independently represent a hydrogen atom M group, a halide atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an arylaryloxy group, an arylthio group, Arylamino, thio, aryl, amino, substituted, silylamino, arylalkenyl, aryl, or cyano. R27 and R28 can be connected to form a ring. Z2 represents _CR38 = Don't independently represent a hydrogen atom, an alkyl group, or 0 or 1.1. Arylalkyl, arylalkoxy, arylalkane substituted carboxyl, substituted silylthio, arylalkynyl, arylamine, A valence heterocyclic ring to form a ring, or R29 and R30 may be connected to CR: 9- or · 〇Ξ C-. R38 and R39 are aryl, 1-membered heterocyclic or cyano. e Z] means _CR36 =: (^ p37 屮 ^ ^ I R-or -c_. R36 and R37 are independent of each other without hydrogen atom, alkane,-gan dao μ standing table or 丨. Earth, earth, A monovalent heterocyclic group or a cyano group. D represents.

Zl為'CR3、r3、者為佳 之觀^爽 ^光兀件之發光波長之短波長化(藍色 士 .看,以4為〇(零)者為佳。 本發明之鹵辛;5工叮 原子可例示如:氟、氣、漠、碘。 314723 19 200403327 烷基可任意為直鏈、支鏈或環狀均可,碳數通常為1 至20左右。具體可例示如:曱基、乙基、丙基、異丙基、 丁基、異丁基、第三丁基、戊基、己基、環己基、庚基、 辛基、2-乙基己基、壬基、癸基、3,7-二甲基辛基、月桂 基、三氟甲基、五氟乙基、全氟丁基、全氟己基、全氟辛 基等。 烷氧可任意為直鏈、支鏈或環狀均可,碳數通常為1 至20左右。具體可例示如:曱氧基、乙氧基、丙氧基、 異丙氧基、丁氧基、異丁氧基、第三丁氧基、戊氧基、己 氧基、環己氧基、戊氧基、辛氧基、2-乙基己氧基、壬氧 基、癸氧基、3,7-二甲基辛氧基、月桂氧基、三氟甲氧基、 五氟乙氧基、全氟丁氧基、全氟己氧基、全氟辛基、曱氧 基曱氧基、2-甲氧基乙氧基等。 烷硫基可任意為直鏈、支鏈或環狀均可,而碳數通常 為1至20左右。具體可例示如:曱硫基、乙硫基、丙硫 基、異丙硫基、丁硫基、異丁硫基、第三丁硫基、戊硫基、 己硫基、環己硫基、戊硫基、辛硫基、2-乙基己硫基、壬 硫基、癸硫基、3,7-二甲基辛硫基、月桂硫基、三氟曱硫 基等。 烷胺基可任意為直鏈、支鏈或環狀均可,可為單烷胺 基亦可為二烷胺基,而碳數通常為1至40左右。具體可 例示如:曱胺基、二曱胺基、乙胺基、二乙胺基、丙胺基、 二丙胺基、異丙胺基、二異丙胺基、丁胺基、異丁胺基、 第三丁胺基、戊胺基、己胺基、環己胺基、庚胺基、辛胺 20 314723 200403327 基、2-乙基己胺基、壬胺基、癸胺基、3,7、二甲基辛胺A、 月桂胺基、環戊胺基、二環戊胺基、環己胺基、二環己胺 基、吡咯烷基、哌啶基、雙三氟甲胺基等。 芳基可具有取代基’碳數通常為3至60左右。具體 可例示如:苯基、c^2烷氧苯基(C|·,2表示碳數為i至12。 以下亦同。)、CV,2炫苯基、卜萘基、2_萘基、五敦苯基 等。 芳氧基在芳環上可具有取代基’而碳數通常為3至6〇 左右,具體可例示如:苯氧基、c^2烷氣苯氧基、 烷苯氧基、1-萘氧基、2_萘氧基、五氟笨氧臬等。 芳硫基在芳環上可具有取代基,而碳數通常為3至6〇 左右,具體可例示如··苯硫基、cN12烷氧苯硫基、Gw 烷基苯硫基、卜萘硫基、2-萘硫基、五氟苯硫基等。 芳胺基在芳環上可具有取代基,而 向杈數通常為3至60 左右,具體可例示如:苯胺基、二装妝 欠基、C】_i2:J:完氧苯 月女基、二((3】.】2烧氧苯基)胺基、二⑴ 一 苯胺基)胺基、1- 奈胺基、2_萘胺基、五氟苯胺基等。 芳烧基可具有取代基,而碳數通當 、㊉為7至60左右, 具體可例示如:苯基-Ci 12烷基、c ^ χ Γ 叫2垸氧本基- 完 基、C,.12烧苯基_cNl2烷基、卜萘基 士士其 烷基等。 兀基、2-奈基-Cl-12 右,具體可例示如:苯基-c^2烷氧基、c 少完氧基C丨·丨2烷苯基-(:丨_]2烷氧基、 芳基烧氧基可具有取代基’而^ 常為7至的左 314723 21 200403327 萘基-Cm2烷氧基等。 芳基烷硫基可具有取體基,而碳數通常為7至60左 右,具體可例示如:苯基-C卜12烷硫基、C卜12烷氧苯基-Cbu 烧硫基、C i . i 2烧苯基-C i i 2烧硫基、1 -奈基-C i i 2烧硫基、 2 -蔡基- Cm2烧硫基等。 芳基烷胺基之碳數通常為7至60左右,具體可例示 如·米基- Cm2院胺基、C^12烧氧1苯基- Cbu烧胺基、C!_12 烧苯基- Ο】.。烧胺基、二(C】_12烧氧苯基- Cbn烧基)胺基、 二(Ch12烧苯基- 烧基)胺基、1-蔡基- 烧胺基、2-蔡基-(^^烧胺基等。 醯基之碳數通常為2至20左右,具體可例示如:乙 醯基、丙醯基、丁醯基、異丁醯基、三甲基乙醯、苯醯基、 三氟乙醯基、五氟苯醯基等。 醯氧基之碳數通常為2至20左右,具體可例示如: 乙醯氧基、丙醯氧基、丁醯氧基、異丁醯氧基、三甲基乙 醯氧基、苯醯氧基、三氟乙醯氧基、五氟苯醯氧基等。 醯胺基之碳數通常為2至20左右,具體可例示如: 曱醯胺基、乙醯胺基、丙醯胺基、丁醯胺基、苯曱醯胺基、 三氟乙醯胺基、五氟苯曱醯胺基、二曱醯胺基、二乙醯胺 基、二丙醯胺基、二丁醯胺基、二苯曱醯胺基、雙三氟乙 醯胺基、二-五氟苯甲醯胺基、琥珀醯亞胺基、酞醯亞胺 基等。 亞胺基之碳數通常為2至20左右,具體可例示如: 可以下列構造式表示的化合物。 22 314723 200403327Zl is' CR3, r3, which is the best view ^ cool ^ the short wavelength of the luminous wavelength of the light element (blue, see, 4 is 0 (zero) is better. The halogen of the present invention; 5 workers Ding atoms can be exemplified as: fluorine, gas, desert, iodine. 314723 19 200403327 Alkyl can be any of linear, branched or cyclic, and the carbon number is usually about 1 to 20. Specific examples include: fluorenyl, Ethyl, propyl, isopropyl, butyl, isobutyl, third butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, 2-ethylhexyl, nonyl, decyl, 3, 7-dimethyloctyl, lauryl, trifluoromethyl, pentafluoroethyl, perfluorobutyl, perfluorohexyl, perfluorooctyl, etc. Alkoxy can be any of linear, branched or cyclic Yes, the carbon number is usually about 1 to 20. Specific examples include: fluorenyloxy, ethoxy, propoxy, isopropoxy, butoxy, isobutoxy, third butoxy, and pentyloxy. Base, hexyloxy, cyclohexyloxy, pentyloxy, octyloxy, 2-ethylhexyloxy, nonyloxy, decyloxy, 3,7-dimethyloctyloxy, lauryloxy, Trifluoromethoxy, pentafluoroethoxy, perfluorobutoxy Group, perfluorohexyloxy, perfluorooctyl, fluorenyloxy, 2-methoxyethoxy, etc. The alkylthio group can be any of linear, branched, or cyclic, and the number of carbons It is usually about 1 to 20. Specific examples include: sulfanyl, ethylthio, propylthio, isopropylthio, butylthio, isobutylthio, third butylthio, pentylthio, and hexylthio. Base, cyclohexylthio, pentylthio, octylthio, 2-ethylhexylthio, nonanyl, decylthio, 3,7-dimethyloctylthio, laurylthio, trifluorosulfanyl Alkylamine group can be any of linear, branched or cyclic, it can be monoalkylamine or dialkylamine group, and the carbon number is usually about 1 to 40. Specific examples include: 曱Amine, Diamido, Ethylamino, Diethylamino, Apropylamine, Dipropylamine, Isopropylamine, Diisopropylamine, Butylamine, Isobutylamine, Tertiary Butylamine, Amylamine Base, hexylamino, cyclohexylamino, heptylamino, octylamine 20 314723 200403327, 2-ethylhexylamino, nonamino, decylamino, 3,7, dimethyloctylamine A, laurel Amino, cyclopentylamino, dicyclopentylamino, cyclohexylamino, di Hexylamino, pyrrolidinyl, piperidinyl, bistrifluoromethylamino, etc. The aryl group may have a substituent, and the carbon number is usually about 3 to 60. Specific examples include phenyl, c ^ 2 alkoxybenzene (C | ·, 2 represents a carbon number of i to 12. The same shall apply hereinafter.), CV, 2xphenyl, naphthyl, 2-naphthyl, pendantyl, etc. An aryloxy group may have on the aromatic ring Substituent 'and the carbon number is usually about 3 to 60. Specific examples include: phenoxy, c ^ 2 alkoxyphenoxy, alkphenoxy, 1-naphthyloxy, 2-naphthyloxy, penta Fluorobenzyl, etc. The arylthio group may have a substituent on the aromatic ring, and the carbon number is usually about 3 to 60. Specific examples include phenylthio, cN12 alkoxyphenylthio, and Gw alkylbenzene. Thiyl, benzonaphthyl, 2-naphthylthio, pentafluorophenylthio, and the like. The arylamine group may have a substituent on the aromatic ring, and the number of branches is usually about 3 to 60. Specific examples can be exemplified by: aniline group, diisopropyl group, C] _i2: J: endoxybenzidine, Bis ((3).] 2 alkyloxyphenyl) amino groups, bis (monoanilide) amino groups, 1-naphthylamino groups, 2-naphthylamine groups, pentafluoroaniline groups, and the like. The aryl group may have a substituent, and the number of carbon atoms is about 7 to 60. Specific examples include: phenyl-Ci 12 alkyl group, and c ^ χ Γ is called 2 垸 oxybenzyl-endyl, C, .12 phenyl-cNl2 alkyl, benzonaphthyl alkyl and the like. Carboxyl, 2-naphthyl-Cl-12 right, specific examples can be exemplified as: phenyl-c ^ 2 alkoxy, c less alkoxy C 丨 · 丨 2 alkylphenyl- (: 丨 _) 2 alkoxy Group, arylalkyloxy group may have a substituent 'and is usually 7 to 314 723 21 200403327 naphthyl-Cm2 alkoxy group, etc. The arylalkylthio group may have a substituent, and the carbon number is usually 7 to About 60, specific examples can be exemplified: phenyl-C12 alkylthio, C12 alkoxyphenyl-Cbuthio, C i. I 2thiophenyl-C ii 2thio, 1-naphthalene -C ii 2 thiol group, 2-Czechyl-Cm2 thiol group, etc. The carbon number of the arylalkylamino group is usually about 7 to 60, and specific examples can be exemplified by · Micyl-Cm2 amine group, C ^ 12 oxy 1 phenyl-Cbu phenyl amine, C! _12 phenyl phenyl- 0] ... amine amine, bis (C) _12 oxy phenyl-Cbn phenyl amine, bis (Ch12 phenyl phenyl) -Alkenyl) amine, 1-zekiyl- amine, 2-zeyl-(^ amine, etc.) The carbon number of fluorenyl is usually about 2 to 20, and specific examples include ethenyl, Propionyl, butylfluorenyl, isobutylfluorenyl, trimethylethylfluorenyl, phenylfluorenyl, trifluoroethylfluorenyl, pentafluorophenylfluorenyl, etc. The carbon number of fluorenyloxy is usually 2 to 2 About 0, specific examples are: Fluorobenzyloxy, etc. The carbon number of amidino group is usually about 2 to 20, and specific examples can be exemplified by: amidino group, acetamido group, propylamido group, butylamido group, and phenylamido group , Trifluoroacetamido, pentafluorobenzylamido, diamidoamine, diethylamidoamine, dipropylamidoamine, dibutylamidoamine, diphenylamidoamine, ditrifluoro Acetylamino, di-pentafluorobenzylamido, succinimidoimino, phthaloimino, etc. The carbon number of the imino is usually about 2 to 20, and specific examples can be exemplified as follows: Represented compound. 22 314723 200403327

取代甲矽烷基可例示如:三曱基甲矽烷基、三乙基曱 石夕烧基、三正丙基曱石夕烧基、三異丙基曱石夕烧基、第三丁 基甲矽烷基二甲基甲矽烷基、三苯基甲矽烷基、三對二甲 苯基甲矽烷基、三〒基甲矽烷基、二苯基甲基甲矽烷基、 第三丁基二苯基曱矽烷基、二甲基苯基甲矽烷基等。 取代曱矽烷基可例示如:三曱基甲矽烷氧基、三乙基 甲矽烷氧基、三正丙基曱矽烷氧基、三異丙基甲矽烷氧基、 第三丁基甲矽烷基二曱基甲矽烷氧基、三苯基甲矽烷氧 基、三對二曱苯基甲石夕:t完氧基、二卞基甲石夕烧氧基、二苯 基曱基甲矽烷氧基、第三丁基二苯基曱矽烷氧基、二曱基 苯基甲矽烷氧基等。 取代曱矽烷硫基可例示如:三曱基曱矽烷硫基、三乙 基曱矽烷硫基、三正丙基甲矽烷硫基、三異丙基曱矽烷硫 基、第三丁基曱矽烷基二曱基曱矽烷硫基、三苯基曱矽烷 硫基、三對二甲苯基甲矽烷硫基、三苄基甲矽烷硫基、二 苯基甲基曱矽烷硫基、第三丁基二苯基曱矽烷硫基、二曱 314723 200403327 基苯基曱矽烷硫基等。 一 • W Μ. Ψ石夕炫*月女基、—一乙 取代曱石夕烧胺基可例示如:二曱暴〒 ^甘 -丙基曱矽说胺 基曱矽烷胺基、三正丙基甲矽烷胺基、一,、Substituted silyl groups can be exemplified by: trimethylsilyl, triethylpyringyl, tri-n-propylpyringyl, triisopropylpyringyl, third butylsilyldiyl Methylsilyl, triphenylsilyl, tri-p-xylylsilyl, trimethylsilyl, diphenylmethylsilyl, third butyldiphenylsilyl, diphenyl Methylphenylsilyl and the like. Examples of substituted fluorenylsilyl groups include: trimethylsilyloxy, triethylsilyloxy, tri-n-propylsilylsilyloxy, triisopropylsilyloxy, third butylsilyldifluorenyl Silyloxy, triphenylsilyloxy, tri-p-diphenylmethylsilyl: t-peroxy, dimethylsilyloxy, diphenylmethylsilyloxy, tert-butyl Diphenylfluorenylsilyloxy, difluorenylphenylsilyloxy and the like. Examples of the substituted fluorenylsilylthio group include, for example, trifluorenylsulfanylthio group, triethylfluorenylsilylthio group, tri-n-propylsilylthio group, triisopropylfluorenylsilylthio group, and third butylphosphoranylsilyl group. Difluorenylsulfanylthio, triphenylsulfanylthio, tri-p-xylylsilylthio, tribenzylsilylthio, diphenylmethylsulfanylthio, tert-butyldiphenyl Sulfonyl sulfanyl thio, disulfonyl 314723 200403327 phenyl sulfonyl sulfanyl and the like. I. W Μ. Ψ 石 夕夕 * 月 女 基, —One ethyl substituted for arsenite amine group can be exemplified as: dioxin 〒 ^ Gly-propyl sulfonylamine silane silylamine, tri-n-propyl Methylsilylamine, one ,,

基、第三丁基曱矽烷基二甲基甲矽烷胺基、二苯基甲矽烷 胺基、三對二甲苯基甲矽烷胺基、三〒基甲石夕烧胺基、一 苯基曱基曱矽烷胺基、第三丁基二苯基曱石夕烧胺基、二甲 苯基甲矽烷胺基、二(三甲基曱矽烷基)胺基、二(三乙基 曱矽烷基)胺基、二(三正丙基甲矽烷基)胺基、二(三異丙 基曱矽烷基)胺基、二(第三丁基甲矽烷基二甲基甲矽烷基) 胺基、二(三苯基曱矽烷基)胺基、二(三對二甲苯基曱矽 烷基)胺基、二(三T基甲矽烷基)胺基、二(二苯基甲基甲 矽烷基)胺基、二(第三丁基二苯基甲矽烷基)胺基、二(二 甲苯基甲矽烷基)胺基等。 1元雜環基係指從雜環化合物去除1個氫原子後所剩 下的原子團之意,碳數通常為4至60左右,而具體可例 示如··噻嗯基、CU12烷基噻嗯基、吡咯基、呋喃基、批 σ疋基、C η2烧基β比咬基、味哇基、吼嗤基、三。坐其、噚 唑基、噻唑基、噻二唑基箄。此辇其,可八 土签寻此寺丞Ί介由醚鍵、硫醚 鍵、烷基、胺基、烯基、炔基等而與Ari或Ar2鍵、纟士。 在芳烯基、芳乙炔基中之芳基可例示與上述之之 相同者。 本發明之高分子化合物 複單元2種以上。 本發明之高分子化合物 可分別含有式〇、《 Θ八u)所示的反 在不損害螢光4 士}^ 1 . Α 性或電荷傳 3】4723 24 200403327 輸特性的範圍内,可人右十 、卜σσ — s 八(1)所示的反複單元以外之反 稷早兀。又,式(1)所示的 一 j久I早元之總合以佔全反複單 兀之5莫耳%以上者為 ”、、土 更以在1 〇重量%以上者為更 佳0 本%明之咼分子化合物中可 之較合適者,可舉: 以通式(6)所 含式(1)以外之反複單位 示的反複單元。 —Ar3 { CR3i^ 32上 、 CR十£ ⑹ (式中,A!表不伸芳基或2個雜環基。、R32分別 獨立表示氫原+、烧基、芳基、"固雜環基或氰基。f為 0 或 1 〇 ) 上达通式(6)中的Arj係伸芳基或2價雜環基。該A〆 :具有1素原子、歸、絲基、烧硫基、烧胺基、伸 方基、伸方乳基、々申芳硫基、#芳胺基、伸芳烷基、伸芳 烷乳基、伸芳烷硫基、伸芳烷胺基、醯基、醯氧基、醯胺 基、亞胺基、取代甲矽烷基、取代甲矽烷氧基、取代甲矽 烷硫基、取代曱矽烷胺基、1價之雜環基、芳烯基、芳乙 块基或氰基等之取代基。Base, tert-butylphosphonium silyldimethylsilylamino, diphenylsilylamino, tri-p-xylylsilylamino, trimethylsilylamine, monophenylfluorenyl Sulfasilylamino, tert-butyldiphenyl vermiculite, dimethylxylsilylamino, bis (trimethylsilyl) amino, bis (triethylsilyl) amino , Bis (tri-n-propylsilyl) amino, bis (triisopropylphosphosilyl) amino, bis (third-butylsilyldimethylsilyl) amino, bis (triphenylphosphonium) Silyl) amino, bis (tri-p-xylylsilyl) amino, bis (tri-Tylsilyl) amino, bis (diphenylmethylsilyl) amine, di (third Butyldiphenylsilyl) amino, bis (xylylsilyl) amino and the like. The 1-membered heterocyclic group refers to the atomic group remaining after removing one hydrogen atom from a heterocyclic compound. The carbon number is usually about 4 to 60. Specific examples include ·· thienyl, CU12 alkylthionine Base, pyrrolyl, furanyl, sigma-fluorenyl, C η 2 alkynyl beta ratios, sulfanyl, glutaryl, trisyl. Sit, oxazolyl, thiazolyl, thiadiazolyl. In this case, you can find this temple with Ari or Ar2 bond or ether through ether bond, thioether bond, alkyl group, amine group, alkenyl group, alkynyl group, etc. Examples of the aryl group in the arylalkenyl group and the arylethynyl group are the same as those described above. The polymer compound of the present invention has two or more kinds of complex units. The polymer compounds of the present invention may each contain a reaction represented by formula 0 and "Θ 八 u) without damaging the fluorescent light 4 ^^ 1. Α property or charge transfer 3] 4723 24 200403327, which is acceptable The tenth from the right, σσ — s other than the repetition unit shown in eight (1), the other is too early. In addition, the sum of a long period of time and the early element shown in formula (1) is more than 5 mole% of the total repetition unit, and more preferably is more than 10% by weight. Among the more suitable molecular compounds of fluorene, the repeating units shown in repeating units other than formula (1) contained in general formula (6) are as follows. —Ar3 {CR3i ^ 32, CR 10 £ ⑹ (Formula In the formula, A! Represents an aryl group or two heterocyclic groups. And R32 each independently represents a hydrogen atom +, an alkyl group, an aryl group, a " solid heterocyclic group or a cyano group. F is 0 or 1 〇). Arj in the general formula (6) is an arylene group or a divalent heterocyclic group. The A〆: has a 1 atom, a natural group, a silk group, a thio group, an amine group, a square group, a square group, Aryl sulfanyl, #arylamino, aralkyl, aralkylene, aralkylthio, aralkylamino, fluorenyl, fluorenyl, fluorenyl, imino, substituted Substituents such as silyl, substituted silyloxy, substituted silylthio, substituted fluorsilylamino, monovalent heterocyclic group, arylalkenyl, arylethyl block, or cyano.

Ar3可為歷來作為EL(電致發光)發光材料利用的材料 中所含的伸芳基或2價之雜環基。此等材料係經揭示在例 如 W099/12989、WOOO/55927、WO01/49769A1、 WO01/49768A2、WO98/06773、US(美國專利)5,7775〇7〇、 W099/543 85、WOOO/4632 卜 US6,169,163B1、W002/077060 中。 314723 25 200403327 伸芳基中含有具有苯環、縮合環者,獨立的笨環或縮 , 合環2個經直接或介由亞乙烯等基之鍵結合,通常為碳數 6至6 0,以6至2 0為佳,可例示如:伸苯基(例如,下述 式(2 6))、_二基(下述式(27))、伸蒽基(下述式(28))、聯 伸苯基(下述式(29))、三伸苯基(下述式(30))、縮合環化合 物基(下述式(3 1))等。在伸芳基上可具有取代基。取代基 可例示如:鹵素原子、院基、烧氧基、:):完硫基、烧胺基、 芳基、芳氧基、芳硫基、芳胺基、芳烧基、芳基烧氧基、 . 芳基烧硫基、芳基烧胺基、酿基、酸氧基、酸胺基、亞胺 基、曱石夕烧基、曱石夕烧氧基、甲石夕烧硫基、1價之雜環基、 芳稀基、芳乙块基或氰基,而伸芳基之碳數中,不包含取 代基之碳數。Ar3 may be an arylene group or a divalent heterocyclic group contained in a material conventionally used as an EL (electroluminescence) light-emitting material. These materials are disclosed in, for example, W099 / 12989, WOOO / 55927, WO01 / 49769A1, WO01 / 49768A2, WO98 / 06773, US (U.S. Patent) 5,7775〇70, W099 / 543 85, WOOO / 4632, US6 , 169, 163B1, W002 / 077060. 314723 25 200403327 The arylene contains those with benzene ring and condensed ring, independent clumps or condensed rings. The two fused rings are bonded directly or through a bond such as vinylidene, usually having 6 to 60 carbon atoms. 6 to 20 are preferable, and examples thereof include phenylene (for example, the following formula (2 6)), _diyl (for the following formula (27)), anthracene (for the following formula (28)), Bis (phenylene) (the following formula (29)), tris (phenylene) (the following formula (30)), a condensed ring compound group (the following formula (3 1)), and the like. The arylene group may have a substituent. Substituents can be exemplified by: halogen atom, courtyard group, alkoxy group, :): thio group, amine group, aryl group, aryloxy group, arylthio group, arylamine group, aryl group, aryl group, oxyalkyl group Aryl, .aryl thio, aryl thio, aryl, acid oxy, acid amine, imine, vermiculite, vermiculyl oxy, methyl sulfonyl, A monovalent heterocyclic group, an aryl dilute group, an aryl ethyl block group, or a cyano group, and the carbon number of the arylene group does not include the carbon number of the substituent.

26 314723 20040332726 314723 200403327

booxbpbooxbp

κ oxκ ox

KK

(3 0)(3 0)

(3 1)(3 1)

本發明中,2價之雜環基係指從雜環化合物去除2個 I原子後之所剩下的原子團之意,而碳數通常為4至60, 27 314723 200403327 以4至20為杜 ^ …土。又’雜環基上可呈右 丄 之碳數中,則不包含取代基之碳數。土、而“基 之中==環化合μ指在具有環狀構造的有機化合物 /成展的元素不僅含石炭,而在環内尚含有氧、硫、 西等雜原子者之意。 <貝之雜環基可例示如下列者。 …含虱的2價雜環基之雜科;可例示如:吡啶二基(下 述式(32))、二氮雜伸苯基(下述式(33))、喹啉二基(下述式 〇 )) 土喔啉一基(下述式(35))、吖啶二基(下述式、 聯二^定二基(下述式(37))、#繞啉二基(下述式⑼))等。 含矽、氮、氧、硫、硒等雜原子並具有芴構造的基(下 述式(39))。 含矽、氮、氧、硫、硒等雜原子的5員環雜環基可例 系如:(下述式(40))。 含石夕、氮、氧、硫、硒等雜原子的5員環縮合雜環基 町例示如:(下述式(41))、笨并噻二唑-4,7-二基基或苯并 _二唑-4,7-二基基等。 含硫等雜原子的5員環雜環基且在其雜原子之α位鍵 結旅成為二聚物或低聚物之基,可例示如:(下述式(42))。 含矽、氮、氧、硫、硒等雜原子的5員環雜環基且在 其雜原子之〇;位與苯基結合的基:可例示(下述式(4 3))。 (3 2) 28 31472: 200403327In the present invention, a divalent heterocyclic group refers to the remaining atomic group after removing two I atoms from a heterocyclic compound, and the carbon number is usually 4 to 60, 27 314723 200403327, and 4 to 20 are used. …earth. The number of carbon atoms which may be represented by the right heterocyclic group does not include the number of carbon atoms of the substituent. Soil, and "in the base == cyclic compound [mu] means that organic compounds / forming elements in a ring structure not only contain charcoal, but also contain heteroatoms such as oxygen, sulfur, and west in the ring. ≪ Examples of the heterocyclic group of shellfish include the following:… A heterodiaceous group containing a divalent heterocyclic group of lice; examples include: pyridyldiyl (formula (32) below), diazaphenylene (formula below) (33)), quinolinediyl (the following formula 0)) toxaxanyl (the following formula (35)), acridinediyl (the following formula, bi-diphenyldiyl (the following formula ( 37)), #wroline diyl group (the following formula ⑼)), etc. A group containing heteroatoms such as silicon, nitrogen, oxygen, sulfur, and selenium and having a europium structure (the following formula (39)). Containing silicon and nitrogen Examples of 5-membered ring heterocyclic groups such as oxygen, oxygen, sulfur, and selenium are as follows: (the following formula (40)). 5-membered ring condensed heterocycles containing heteroatoms such as stone, nitrogen, oxygen, sulfur, and selenium Cyclocycline is exemplified by: (the following formula (41)), benzothiadiazole-4,7-diyl group, benzo_diazole-4,7-diyl group, etc. A 5-membered heterocyclic ring group which is bonded at the α position of its heteroatom to form a dimer or oligomer, and can be exemplified For example: (the following formula (42)). 5-membered ring heterocyclic group containing heteroatoms such as silicon, nitrogen, oxygen, sulfur, selenium, etc., and 0 of the heteroatoms; a group bonded to a phenyl group at the position: exemplified ( The following formula (4 3)). (3 2) 28 31472: 200403327

(3 6) 29 314723 200403327 (3 7) (3 8)(3 6) 29 314723 200403327 (3 7) (3 8)

/〇〇a ό^ό tjJ tjl IjJ R·· R" Rn/ 〇〇a ό ^ ό tjJ tjl IjJ R ·· R " Rn

(3 9) 戈 j I今斗 •R R1 r·· 30 314723 (40) 200403327 R" /(3 9) Ge j I Jindou • R R1 r · 30 314723 (40) 200403327 R " /

(4 1)(4 1)

q } 式中,R’分別獨立表示氫 氧基、烧硫基、垸胺基、芳基、芳※素原子、烧基] ^ 土 方虱基、芳硫基、芳胺基 方烷基芳基烷氧基、芳基烷硫基、芳基烷胺基、醯氧基 醯胺基、芳烯基、芳炔基、丨價之雜環基或氰基。r,,分另· 獨立表示氫原子、烷基、芳基、芳烷基、取代曱矽烷基, 醒基、或1價之雜環基。 31 314723 200403327 再者,2價之雜環基亦可包含如:三重項發光配位化 合物等,可例示:例如下列所例示的2價之金屬配位化合 基。q} In the formula, R ′ each independently represents a hydroxyl group, a thiol group, a sulfanyl group, an aryl group, an aryl * element atom, and a thiol group. ^ Earth alkoxyl, arylthio, and arylamino square alkylaryl groups Alkoxy, arylalkylthio, arylalkylamino, fluorenylamino, arylalkenyl, arylalkynyl, valent heterocyclic or cyano. r, separately and independently represents a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, a substituted fluorsilyl group, an alkyl group, or a monovalent heterocyclic group. 31 314723 200403327 In addition, the divalent heterocyclic group may also include, for example, a triplet luminescent coordination compound and the like, and examples thereof include, for example, the divalent metal coordination compound illustrated below.

32 314723 20040332732 314723 200403327

本發明之高分子化合物能含除了( l)以外之反複單元 而在發光效率方面較佳者,可舉如:下述式(7)表示的反 複單元。 33 314723The polymer compound of the present invention can contain repeating units other than (1) and is preferable in terms of luminous efficiency, and examples thereof include a repeating unit represented by the following formula (7). 33 314723

而Ar4歲 ’、 立的伸芳基或2價雜環 ^ " Al可互相鍵結以形成产 % 芳基、〕, 。又,R33表示烷λ 價之雜環基、可以下述式 土、 、八(8)所示的基、或可 為1至4之整數。 述式(9、雜環基、可以下述式⑻ )所示的基。g為1至4之整數Ar4 ', arylene or divalent heterocyclic ^ " Al can be bonded to each other to form a% aryl group,]. R33 represents a heterocyclic group having an alkane valence of valence, and may be a group represented by the following formula: 、, 八 (8), or an integer of 1 to 4. The group represented by formula (9, heterocyclic group, may be represented by the following formula ⑻). g is an integer from 1 to 4

Ar( h ⑻ 式中,Αι*6為伸芳基或2價夕% 1 桷之雒環基。表示 子、烷基、芳基、1價之雜環基、 土 或可以下述式(9)所干,, 基。Z3表示-CR4G = CR4丨-或r 7不的 一 〜^…汉“及r4i分別 不氫原子、烷基、芳基、1價之# a t u 表 雄&基或氰基。h為〇 $ 2之整數。Ar (h ⑻ In the formula, Aι * 6 is a aryl group or a divalent fluorene ring group of 1 桷. Represents a sub group, an alkyl group, an aryl group, a monovalent heterocyclic group, earth, or the following formula (9 ), Z3.-Z4 means -CR4G = CR4 丨-or r 7 is not a ~ ^ ... Han "and r4i respectively do not have a hydrogen atom, alkyl, aryl, 1-valent # atu epithion & radical or Cyano.h is an integer of 0 $ 2.

(9) 式中,Ar7及Ar8係分別獨立 1伸方基或2價之雜環 基。R42表示氫原子、烧基、芳美十 方暴或1價之雜環基。又, 反七表示烷基、芳基或1價之雜環美.. 一 及I。1為1至4之整數 可以通式(7)所示的反複單元 ^ 之較佳具體例可例示如 下圖者。又,在苯環上或雜環臬 基上可具有取代基。 314723 34 200403327(9) In the formulas, Ar7 and Ar8 are each independently a monovalent or divalent heterocyclic group. R42 represents a hydrogen atom, an alkyl group, a aryl group, or a monovalent heterocyclic group. In addition, trans seven represents an alkyl group, an aryl group, or a monovalent heterocyclic group .. I and I. 1 is an integer of 1 to 4. Preferred specific examples of the repeating unit ^ represented by the general formula (7) can be exemplified as shown in the figure below. Moreover, it may have a substituent on a benzene ring or a heterocyclic fluorenyl group. 314723 34 200403327

本發明之高分子化合物之數平均分子量以聚苯乙烯換 35 314723 异為10。至l〇8。反 y丨八 又構&之總數,雖因反複構造或其比 例會有所不同,惟p ^ & < 昇性之觀點來看,一般反複構造之 4數以5至100〇〇為佳, 以10至10000為更佳,又以20 至50000為最佳。 本發明之高分子化合物, . 可為無規共聚物、嵌段共聚 物或接枝共聚物,亦可為 j為具有此等之中間構造的高分子, 例如帶有嵌段性的益颊丘取 ^ …、規/、XK物。為製得螢光之量子產率高 的向分子化合物的觀點來看, ^ T有肷段性的無規共聚物或 者嵌段或接枝共聚物較完全的" 早乂7^王的热規共聚物為佳。主鍵上有 分枝而末端部有3個以上的愔 J f月形或樹枝狀聚物(den(lrimer) 亦包含在内。 本發明之咼分子化合物所含 I 5的反禝早兀,可為被非共 軛之單元所連結,或在反複單元中人& & > μ u + ’、 、 ^ 凡f含有此等非共軛部份。 連結反複單元的構造之例示如··下别抓一 下列所不者,下列所示者 與伸乙烯基組合者,以及下列所千去炎心 / j所不者為中組合2個以上 者。在此,R係氫原子、碳數丨$ 7 Ω + ^ u 丄至20之烷基、碳數6至 6〇之芳基以及選自碳數4至6〇之雜俨l 一 <濉%基而成的群中之 基,而Ar表示碳數6至60之煙美。 314723 36 200403327 oThe number average molecular weight of the polymer compound of the present invention is changed from polystyrene to 35,314,723, and is 10. To 108. Although the total number of anti-y and eight structures is different due to repeated structures or proportions, p ^ & < From the perspective of ascension, the number of repeated structures is generally 5 to 100,000. 10 to 10,000 is more preferred, and 20 to 50,000 is most preferred. The polymer compound of the present invention may be a random copolymer, a block copolymer or a graft copolymer, or j may be a polymer having such an intermediate structure, such as a blocky buccal mound. Take ^ ..., gauge /, XK thing. From the viewpoint of making molecular compounds with high quantum yields of fluorescence, ^ T random copolymers or block or graft copolymers with a segmented nature are relatively complete " Early 乂 7 ^ 王 的 热Atactic copolymers are preferred. The main bond has branches and three or more 愔 J f crescents or dendrimers (den (lrimer)) are also included. The 5 molecule of the 的 molecular compound of the present invention is premature, but To be connected by a non-conjugated unit, or in a repeating unit & & > μ u + ',, ^ where f contains these non-conjugated parts. An example of the structure of a connected repeating unit is ·· Do n’t focus on one of the following, a combination of the following and a vinyl group, and a combination of two or more of the following. The R is a hydrogen atom and a carbon number.丨 $ 7 Ω + ^ u alkyl groups of 之 to 20, aryl groups of 6 to 60 carbons, and a group selected from the group consisting of hetero 俨 l- 濉% groups of 4 to 60 carbons, And Ar represents the beauty of smoke with a carbon number of 6 to 60. 314723 36 200403327 o

-S-S

NN

RIBRIB

I—S-R R —4—I—S-R R —4—

R 1 OHC 1 '0o=c'R 1 OHC 1 '0o = c'

〇=c c=〇 \ / N OHC cyo OH-C〇=q、CHO -NIR Λ 一 OMnc cnMO I-N onnc 1ό〇 = c c = 〇 \ / N OHC cyo OH-C〇 = q, CHO -NIR Λ-OMnc cnMO I-N onnc 1ό

〇 II —C-N-I R〇 II —C-N-I R

——I C=C— ^ 士 S明之高分子化合物之末端基其聚合活性基本身 ^則由於作成元件時之發光特性或耐用壽命會降 欠士可使用安定的基加以保護。以具有與主鏈之共軛 ,㈣的共輕鍵結者為佳’可例示如:介由碳_碳鍵;“ 與方基或雜環基鍵結的構造。 又,由於利用來自薄膜的發光,本發明八 物以使用固體狀態而具有螢光者為佳。 。刀 對本發明之高分子化合物之優良溶媒,可例示如: 仿一氣曱烷、二氯乙烷、四氫咲喃、甲笨、二甲苯、工3 三甲基苯、四氫化萘、十氫萘胺、正丁基苯等。1因高, 子化合物之構造或分子量而有所不同,惟通常可在此等 媒中溶解0 · 1重量%以上者。 ^ 其·人’就本發明之南分子化合物之制 Μ。 之衣适方法加以說 本發明之高分子化合物可將下述, 八(]〇)所示的化合斗 314723 37 200403327 作為原料之一種並加以稠聚合即 1 Γ製造。 X1——X2——I C = C— ^ S The terminal group of the polymer compound of S Ming has the basic polymerization activity. ^ Due to the light-emitting characteristics or durable life when the device is made, it can be protected by a stable base. Those having a conjugate to the main chain and a co-light bond of fluorene are preferred, such as: via a carbon-carbon bond; "a structure bonded to a square or heterocyclic group. In addition, since the Luminescence, the eight substances of the present invention are preferably those in a solid state with fluorescence. The excellent solvent for the polymer compounds of the present invention can be exemplified by: imitation monogasmane, dichloroethane, tetrahydrofuran, formazan Benzo, xylene, trimethylbenzene, tetrahydronaphthalene, decalin, n-butylbenzene, etc. 1 varies due to the high structure and molecular weight of the child compounds, but can usually be used in these media Those that dissolve more than 0.1% by weight. ^ The "human" is based on the method for preparing the molecular compound of the present invention. The polymer compound of the present invention can be expressed as follows, as shown in (8) below. Combining bucket 314723 37 200403327 as a kind of raw material and thick polymerization, that is, 1 Γ manufacturing. X1——X2

(式中,Ar1、Αι,2、X1、χ2 以 ⑽ 及D2分別獨立表示鹵素原子、埝:係舁式⑴相同。Dl 鹽基、芳基烧基績酸鹽基、·d μ鹽基、芳基續酸 磺酸鹽基甲基、單鹵化甲基、,:金曱基、鱗甲基、 乙稀基。) a基、甲醯基、氰甲基或 ° :甲烷磺酸鹽基、乙烷 芳基續酸鹽基可例示如: ’芳基烷基磺酸鹽基可例 在此,烧基績酸鹽基可例示 磺酸鹽基、三氟曱烷磺酸鹽基等, 苯續酸鹽基、對曱苯石黃酸鹽基等 示如··〒基磺酸鹽基等。 石朋酸酯基可例示如下述式所示(In the formula, Ar1, Aι, 2, X1, χ2, and ⑽ and D2 each independently represent a halogen atom, 埝: the same as 舁 formula ⑴. D1 salt group, aryl alkyl group salt group, · d μ salt group, Aryl continued acid sulfonate methyl, monohalogenated methyl, auranyl, squamyl, ethyl.) A group, methyl amidino, cyanomethyl or °: methane sulfonate, ethane Examples of the arylcontanoate group are as follows: 'Arylalkylsulfonate group may be exemplified here, and the alkanoate group may be exemplified by sulfonate group, trifluoromethanesulfonate group, etc., and benzoic acid Examples of the salt group, p-xenthionite salt, and the like include a sulfonate group and the like. The lithopentyl group can be exemplified by the following formula

OMe 〇Et i \)Me 〇etOMe 〇Et i \) Me 〇et

鎏甲基可例示如·下L式所示的基。_CH2SMe2X、-CH2SPh2X (式中,X表示鹵素廣子。) 鎸曱基可例示如:下述式所示的基。The fluorenylmethyl group is exemplified by a group represented by the following L formula. _CH2SMe2X, -CH2SPh2X (In the formula, X represents a halogen group.) The fluorenyl group can be exemplified by a group represented by the following formula.

XH2PPh3X (式中,X表示鹵素肩子。) 314723 38 200403327 磺酸鹽曱基可例示如:下述式所示的基 -CH2P〇(〇r"i)2 (式中,R’"表示烧基、芳基或芳燒芦 、氯曱基、溴甲基、碘 單鹵化甲基可例示如:貌曱基 甲基。 縮合聚合之方法在主鏈上具有伸乙烯基的情形,視需 要使用其他單體而可例示如:Π]藉由具有醛基的化合物 與具有鱗鹽基的化合物間之維持(Wittig)反應的聚合, 藉由具有酸基及鱗鹽基的化合物之維持反應的聚合,[3] 藉由具有乙稀基的化合物與具有_素原子的化合物間之駭 克(Heck)反應的聚合,[4]藉由具有乙烯基及鹵素原子的Λ 化合物之駭克反應的聚合’[5 ]藉由具有醛基的化合物與 烧基膦酸鹽基的化合物間之歐納·俄士歐斯.埃蒙 (Horner-Wadsworth-Emmons)法的聚合,[6]藉由具有駿義 及烧基膦酸鹽基的化合物之歐納·俄士歐斯·埃蒙法的 合’[7 ]藉由具有齒化甲基2個以上的化合物之去鹵化气 法的聚縮合,[8]藉由具有鎏鹽基2個以上的化合物之攻 鹽分解法的聚縮合’[9 ]藉由具有酸基的化合物與具有 3乙 腈基的化合物間之克内費納格爾(Κ η 〇 e v e n a g e 1)反應的3 合’ [l〇]藉由具有醛基及乙腈基的化合物之克内費納 、 个〇爾 反應的聚合等方法’[1 1 ]藉由具有2個以上駿基的化八物 之麥克姆萊(McMurry)反應的聚合等方法。 就上述[1 ]至[11 ]之聚合,依式表示如下。 31472 39 〔1〕 200403327 0HC Ar——CH0 + X* Ph3P+H2C一 Ar*-CH2P+Ph3 χ*XH2PPh3X (In the formula, X represents a halogen shoulder.) 314723 38 200403327 The sulfonate sulfonyl group can be exemplified by the following group: -CH2P〇 (〇r " i) 2 (In the formula, R '" represents An alkyl group, an aryl group, or an aromatic group, a chlorofluorenyl group, a bromomethyl group, and an iodine monohalogenated methyl group can be exemplified by a methyl group. The method of condensation polymerization has a vinyl group on the main chain, as required Examples using other monomers include: Π] Polymerization by a Wittig reaction between a compound having an aldehyde group and a compound having a scaly salt group, and a reaction by maintaining a reaction with a compound having an acid group and a scaly salt group. Polymerization, [3] Polymerization by the Heck reaction between a compound having a vinyl group and a compound with a _ prime atom, [4] Polymerization by the hacking reaction of a Λ compound having a vinyl group and a halogen atom Polymerization '[5] by the Horner-Wadsworth-Emmons polymerization between a compound having an aldehyde group and a compound having an alkyl phosphonate group, [6] The combination of Juna and burned-based phosphonate-based compounds is O'Neal Osim's method [7]. Polycondensation by dehalogenation gas method of two or more compounds having toothed methyl groups, [8] Polycondensation by salt decomposition method of two or more compounds having a sulfonium salt group '[9] The 3-in-1 reaction of Kennefenagel (K η eveneven 1) between a compound and a compound having 3 acetonitrile groups. And other methods of polymerization such as "1" [1 1] Polymerization by McMurry reaction of two or more compounds of eight groups. As for the polymerization of [1] to [11], according to the formula It is expressed as follows: 31472 39 [1] 200403327 0HC Ar——CH0 + X * Ph3P + H2C-Ar * -CH2P + Ph3 χ *

Check

〔2〕 OHC——Ar——CH2P+Ph3 X·〔2〕 OHC——Ar——CH2P + Ph3 X ·

n 〔3〕 驗 /n 〔3〕

Ar — + Br—Ar·-Br-^ -pAr ί巴觸媒 \Ar — + Br—Ar · -Br- ^ -pAr Catalyst

〔4〕Br ——Ar 驗 -3鈀觸媒〔4〕 Br ——Ar test -3 Palladium catalyst

η 〔5〕 40 314723 200403327 〇HC-Ar一CH〇 + (R0)2(0)PH2C—Ar*-CH2P(0)(〇R)2η [5] 40 314723 200403327 〇HC-Ar-CH〇 + (R0) 2 (0) PH2C-Ar * -CH2P (0) (〇R) 2

CN 〔10〕 驗 〇HC——Ar——CH2CN -►CN 〔10〕 Test 〇HC——Ar——CH2CN -►

n CN 41 314723 〔11〕 200403327 OHC- •Ar-CH〇n CN 41 314723 〔11〕 200403327 OHC- • Ar-CH〇

TiCl3-Zn •Ar 又,本發明之南分子化合物之製造方法,*主鏈上不呈有 伸乙晞基的情形’可例示如:叫藉由鈐木(Suzukl)偶合 反應而進行聚合的方法’ [13]藉由格利雅(—η—反應 而進行聚合的方法,[14]藉由Ni(〇)(鎳氧化物)觸媒而進 行聚合的方法’[15]藉由FeCl3(氯化鐵)等之氧化劑而進 行聚合的方法、電氣化學式的氧化聚合的方法,或問藉 由具有適當的脫離基的中間物高分子之分解的方法等。 就上述[12]至[16]止之聚合法,依式表示如下。 〔12〕 Br-Ar一Br + _ 絶觸媒 ( \ ^ (~Ar—Ar'—)- "Ar—Br + (RO)2B-Ar·—B(〇R)2 R為氫原子,貌基 鹼 η 〔13〕TiCl3-Zn • Ar In addition, the method for producing the south molecular compound of the present invention, * the case where the main chain does not have an ethylidene group, can be exemplified by a method called polymerization by a Suzukl coupling reaction '[13] A method of polymerization by Grignard (-η- reaction, [14] A method of polymerization by Ni (〇) (nickel oxide) catalyst "[15] by FeCl3 (chlorination A method of polymerizing an oxidizing agent such as iron), a method of oxidative polymerization of an electrochemical formula, or a method of decomposing a polymer by an intermediate having an appropriate leaving group, and the like. [12] to [16] above The polymerization method is expressed as follows: [12] Br-Ar-Br + _ absolute catalyst (\ ^ (~ Ar-Ar '—)-" Ar-Br + (RO) 2B-Ar · -B (〇 R) 2 R is a hydrogen atom, and the base η [13]

Br-Ar-MgBr 鎳觸媒 n 〔14〕 Br-Ar—BrBr-Ar-MgBr nickel catalyst n [14] Br-Ar-Br

Ni(0) 〔15〕Ni (0) 〔15〕

Cf 氧化聚合Cf oxidative polymerization

Y FeC13,電氣化學式 Y 為 S,NH 錢 314723 42 〔16〕 200403327Y FeC13, chemical formula Y is S, NH Qian 314723 42 〔16〕 200403327

ROCO OCORROCO OCOR

R 熱分解 -->R Thermal Decomposition->

此中,由於容易進行構造控制之故,較佳為藉由維持 反應的聚合、藉由駭克反應的聚合、藉由歐納·俄士歐斯· 埃蒙法的聚合、藉由克内費納格爾反應的聚合以及藉由铃 木偶合反應而進行聚合的方法、藉由格利維反應而進行聚 θ的方法、藉由N i (Ο)觸媒進行聚合的方法。再者,從原 料容易取得及聚合反應操作之方便性來看,較佳為藉由鋒 木偶合反應而進行聚合的方法、藉由格利維反應而進行聚 合的方法、藉由Ni(0)觸媒而進行聚合的方法。 π村尽贫明之高分子化合物作為高分子led之發光 材料使用時,由於其純度會對發光特性產生影響之故, ::明,製造方法中’則以充份實施上述分離操作,精靠 去除未反應單體、副生成物、觸媒殘造等。 乙、木日寸,祇要是能充份去除、^ 可。為防止·于所歹“的办媒的條件即 阿刀子化合物之變質起f , t 遮光而進行乾焊者、(見以此在惰性氣體中 熱而變質的溫度下進疒m -刀子化合物不致於因 反卜進订乾燥者為佳。 本發明夕古, 用 B 阿刀子化合物可作為發光 用。再者,亦可作生币# ^ ^材科之有效成份使 先干材料,或藉由摻 · 有祛+導體材料、 太义 、〇PIng)而作為導雷奸 本發明中具有液晶性的*八;生材料使用。 子化合物的分子顯示 ::子化合物’係指含有高分 “目之意。液晶相,係可藉由偏光 314723 43 200403327 ’、A ’兄以及差示掃瞄熱量測定、X光繞射測定等加以確 認。 具'有液晶性的化合物,已知有由於使其定向即可具有 笔氣性的各向齐性。(合成金屬(Synthetic Metals)ll9 期,(2001 年)537 頁) 一"疋向的作法而言,可採用:一般周知為作為液晶 之疋向作法者,例如「液晶之基礎與應用」(松本正一、 市良共著,工業調查會出版,1991年)第5章,「強 。二性液曰曰之構造及物性」(福田敦夫、竹添秀男共著, 那社出版’ 1990年)第7章,「液晶」第3卷第1張(1999 1 6頁寻所纪載之方法。其中擦拭法、光定向法、 施加法或提升塗佈法在作為定向作法上簡便有用 丑合易利用。 使用=二係使用布等將基板表面輕輕擦拭的方法。可 1定用圾每或尚分子薄 · 紗布或聚酿、棉布n 拭基板用的布,可使用 外形成定向膜,二:;二、奮等布。又,如在基板上另 如.承fe亞胺、聚醯胺HfeT舉 而市售之液晶用定h (水乙烯醇)、聚酯、尼龍等, 仪3曰用疋向膜亦可估用。—a * 版印刷等形成,擦拭 疋向版可依旋塗法、柔 選擇。 , 可配合定向膜之情況適當 光定向法,係指名/ UV(紫外線)光照射$ :板上形成(向膜,並藉由將偏光 定向功能的方法。光的方法而使其具有 -向膜可舉如··聚醯亞胺、聚醒胺、聚 314723 44 200403327 乙烯肉桂酸酯,而市售之液晶用定向膜亦可使用。 在擦拭法或光定向法中,在經實施上述所記載之處理 的基板間夾介有經定向的高分子材料,即可使其定向。此 時,必須將基板作成材料達到液晶相或各向等相之溫度。 〉凰度δ又疋之^ 施,可尤脾古八 y 了在將呵分子材料夾介在基板之前或 後。又,僅將該高分子材料塗佈在經實施定向處理的基板 ί= ° w分子之塗佈,係可依將高分子載置在基板上並 故疋為Tg(玻璃化溫度)以上或能顯示液晶相或各向等相 的溫度,使用輕子「 …望 (d)寻在—方向塗佈,或調製經溶解 在有機=媒的溶液,而可依旋塗法或柔版印刷法等實施。 切’交應力施加法,在并产 料上恭蓄甘 ^ !載置在基板上的高分子材 使美板往1基板’在能成為液晶相或各向等相的溫度下 :二 向挪移的方法。此時,基板,如使用經實施 :::=或光定向法中所記載的定向處理的基板,'即 == 者。基板可使用破璃或高分子薄膜,亦 心力所挪移者非為基板而為金屬製之|昆子。 提上/塗佈法’係指將基板浸潰在高分子溶液中後,再 k上來的作法。用 升速度並不特別限… 液的有機溶液,或基板之提 整。 疋而可配合南分子之定向度選擇並調 將本發明之高分子化合古 材料使用時,為^ 丨為子LED之發光 佳為將〜〜…屯U發光特性產生影響起見,較 、“ 前之單體藉由蒸館、昇華精製、再”日等々古 法加以精製後再進行聚合,又…:“,再—寺之方 .X 為合成後進行依再沈 31472, 45 200403327 殿精製、色譜法的分離等之純化處理。 又’由於利用來自薄膜之發光或磷光之故,本發明之 高分子化合物較佳為使用在固體狀態下具有螢光或磷光 者。 對本發明之高分子化合物的優良溶媒可例示如··氯Among these, since it is easy to control the structure, it is preferable to use polymerization by maintaining reaction, polymerization by hacking reaction, polymerization by Ona Oshos-Emmon method, and by Kennef. Polymerization of Nagel reaction and method of polymerization by Suzuki coupling reaction, method of polytheta by Gleeve reaction, and method of polymerization by Ni (0) catalyst. Furthermore, from the viewpoint of easy availability of raw materials and the convenience of polymerization reaction operation, a method of polymerization by frontal coupling reaction, a method of polymerization by Gleeve reaction, and Ni (0) are preferred. Catalyst for polymerization. When the π village's poor and bright polymer compound is used as a polymer led light-emitting material, its purity will affect the light-emitting characteristics. :: 明, in the manufacturing method, the above-mentioned separation operation is fully implemented, and the removal is precisely performed. Unreacted monomers, by-products, catalyst residues, etc. B, Mu Ri inch, as long as it can be fully removed, ^ OK. In order to prevent the conditions of the media, that is, the deterioration of the A knife compound starts from f and t, and the dry welding is performed by shading (see this, the temperature is deteriorated by the heat in an inert gas, and the m-knife compound does not cause It is better to order the dry because of anti-bubble. According to the present invention, the compound with B A knife can be used as light. Furthermore, it can also be used as the active ingredient of the raw coin # ^ ^ Materials to make the material dry, or by Doped with + conductive material, Taiyi, 〇PIng) and used as the material of the liquid crystal in the present invention; the use of raw materials. The molecular display of sub-compounds: "Sub-compounds" means high Meaning. The liquid crystal phase can be confirmed by polarized light 314723 43 200403327 ', A', and differential scanning calorimetry, X-ray diffraction measurement. It is known that a compound having a liquid crystallinity has an isotropic property of writing by aligning it. (Synthetic Metals Issue ll9, (2001), p. 537) In terms of the "direction", it can be adopted: generally known as the direction of liquid crystal, such as "basics and applications of liquid crystal" ( Co-authored by Matsumoto Masao and Ichi, published by the Industrial Survey Association, 1991) Chapter 5, "Strong. Structure and Physical Properties of Amphoteric Fluids" (Co-authored by Atsuo Fukuda and Hideaki Taketa, published by Nasha '1990) No. 7 Chapter, "Liquid Crystals", Vol. 3, No. 1 (1999-16). The methods of wiping, light-orientation, application, or lift-up are simple, useful, and easy to use as orientation methods. Use = two methods of gently wiping the surface of the substrate with cloth, etc. You can use a thin cloth or gauze or polystyrene, cotton cloth n to wipe the substrate cloth, you can use an outer orientation film, two: Second, Fen and other cloths. For example, on the substrate, another example is to support feimine, polyamidoamine HfeT, and commercially available liquid crystals (water vinyl alcohol), polyester, nylon, etc. Orientation film can also be used for evaluation. —A * Plate printing and other formation, wipe the direction plate can be spin-coated Flexible selection. Can be matched with the situation of the orientation film. Appropriate light orientation method refers to the name / UV (ultraviolet) light irradiation. $: Formed on the board (to the film, and by the function of directing polarized light. The method of light makes it Examples of the oriented film include: polyimide, polyamine, poly314723 44 200403327 vinyl cinnamate, and commercially available alignment films for liquid crystals can also be used. In the wiping method or light alignment method, the Oriented polymer materials are interposed between the substrates on which the above-mentioned treatment is performed, so that they can be oriented. At this time, the substrate must be made of a material to reach the temperature of the liquid crystal phase or isotropic phase. It can be applied to the substrate before or after the molecular material is sandwiched between the substrates. Moreover, the polymer material is coated only on the substrate subjected to the orientation treatment. Depending on the temperature on which the polymer is placed on the substrate and the temperature is higher than Tg (glass transition temperature) or can display the liquid crystal phase or isotropic phase, use the lepton "... look (d) coating in the-direction, Or prepare a solution which is dissolved in organic solvent, and can be spin-coated. Or flexographic printing method, etc. Cut the 'cross-stress application method, respectfully coexist on the production materials ^! The polymer material placed on the substrate makes the US board to one substrate' can become a liquid crystal phase or isotropic etc. Phase temperature: two-way displacement method. At this time, if the substrate is subjected to the orientation treatment described in the ::: = or the light orientation method, the substrate can be broken glass or high. The molecular film is also made of metal instead of a substrate | Kunzi. Lifting / coating method refers to the method of immersing the substrate in a polymer solution, and then k up. Use the speed and It is not particularly limited to ... a liquid organic solution, or the finishing of a substrate. 疋 It can be used to select and adjust the polymer compound ancient materials of the present invention in accordance with the orientation of the South molecule. ~~ ... In order to affect the luminous characteristics of the U, the former monomers are refined by ancient methods such as steaming halls, sublimation refining, and re-refining, and then polymerized, and ...: "Re-Sifang Fang .X is a chromatographic separation and refining 31472, 45 200403327 after synthesis. The purification process. Since the light-emitting or phosphorescent light from the thin film is used, the polymer compound of the present invention is preferably one having fluorescence or phosphorescence in a solid state. Examples of excellent solvents for the polymer compounds of the present invention include chlorine.

仿、二氯甲烷、二氯乙烷、四氫呋喃、甲苯、二甲苯、US 二甲基苯、四氫化萘、十氫萘胺、正丁基苯等。雖因高分 子、物之構4或为子$而有所不同,惟通常可在此等溶 媒中溶解〇 · 1重量%以上。 接者,就本發明之高分子LED加以說明。 月之阿刀子LED之特徵為:在由陽極及陰極而 成的電極間具有發光層, 化合物。 七尤層3有本發明之高分子 又,本發明之高分子LED而言,可舉··在阶極 光層之間設置有電子傳輸層的高分子咖:心 =之間設置有空穴傳輸層的高分子LED,在陰極二 先層之間設置有電子傳輸層’且 ;… 右六々德蛉岛从一 刃仏,、心九層之間設置 有二八傳軏層的鬲分子LED等。 本發明之高分子LED中,1 層之間設置有與該電極相鄰接:八至…之電極… 高分子其至少==有導電性高分子的層的 與該電極相鄰接而膜厂”"發光層之間亦設置有 ……子随以下之絕緣層的高分子LED。 ’Μ示如下述之a)U)之構造。 a) 1%極/發光層/陰極 314723 46 b) 陽極/空穴傳輸層/發光層/陰極 c) 陽極/發光層/電子傳輸層/陰極 d) 陽極/空穴傳輸層/發光層/電子傳輸層/陰極 (在此,/ §己號表示各声 同。) 。層相鄰接而經積層之意。以下刃 在此,發光層係指具有發 係指具有傳輸空穴的功能之…=,而空穴傳^ 電子的功能之層。另外,將!:傳輸層則指具物 為電荷傳輸層。 '子傳輸層及空穴傳輪層總* 發光層、空穴俚於恳 _ 層以上。 傳‘層、電子傳輸層可分別獨立使用2 :二與電極相鄰接所設置的電荷傳輸 有 文。耒自電極的電荷植入效 一 具有 的效果者,一般特別 〜低兀件之驅動電屬 植入層)。 扭為电何植入層(空穴植入層、電子 再者’為提昇與電極之 植入之改善起見,可與電:;:::貼性或來自電極的電荷 層或膜厚2議以下之絕 妾而设置雨述之電荷植入 性或防止混入等起見*曰’又,亦為提昇界面之密貼 此σ寻趣見^,可,恭* 入薄薄的緩衝層。 兒何專輸層或發光層之界面插 =層積層之順序或數目、以及各層厚度,可斟的發 先效干或元件耐用壽命之下適當使用。 入岸: ' 月中。又置有電荷植入層(電子植入層、空穴植 …南分子LED可例舉如:與陰極相鄰接而設置有電 314723 47 200403327 何植入層的高分子LED、與陽極相鄰接而設置有電荷植 入層的高分子LED。 例如,具體可舉:以下之e)至p)之構造。 e) 陽極/電荷植入層/發光層/陰極 f) 陽極/發光層/電荷植入層/陰極 g) 陽極/電荷植入層/發光層/電荷植入層/陰極 h) ^極/電荷植入層/空穴傳輪層/發光層/陰極 0陽極/空穴傳輸層/發光層/電荷植入層/陰極 J)陽極/電荷植入層/空六傳輪 兒何植入層/陰極 木包何植入層/發光層/電荷傳輸層/陰極 U陽極/發光層/電子傳輸層/電荷植入層/陰極 m)陽極/電荷植入層/發光層/ 电卞得™層/電何植入厚/险士s η)陽極/電荷植声/ a IW極 〇)陽搞,Γ 輸層/發光層/電荷傳輸層/陰極 17二八傳知層/發光層/電子傳 P)陪托/千4 丁1寻叛層/兒何植入層/陰極 極/-电何植入層/空穴傳輪層/發光 植入層/陰極 电千傳知層/電荷 電荷植入層之具體例可例示如:含 層’·經設置在陽極與空穴傳輸· u 刀子的Imitation, dichloromethane, dichloroethane, tetrahydrofuran, toluene, xylene, US dimethylbenzene, tetralin, decalin, n-butylbenzene, and the like. Although it differs depending on the high molecular weight, the structure of the material, or the molecular weight, it can usually be dissolved in these solvents by 0.1% by weight or more. Then, the polymer LED of the present invention will be described. The feature of Tsuki's A knife LED is that it has a light-emitting layer and a compound between electrodes formed by an anode and a cathode. The Qiyou layer 3 contains the polymer of the present invention. For the polymer LED of the present invention, a polymer coffee having an electron transport layer disposed between the step aurora layers can be mentioned: a hole transport is provided between the heart =. Polymer LED with two layers, an electron transport layer is provided between the first two cathode layers; Wait. In the polymer LED of the present invention, a layer is provided adjacent to the electrode between one layer: eight to ... an electrode ... a polymer having at least a layer of conductive polymer adjacent to the electrode and the film factory "&Quot; Polymer LEDs with ... following insulating layers are also provided between the light-emitting layers. 'M shows the following a) U) structure. A) 1% pole / light-emitting layer / cathode 314723 46 b) Anode / hole transport layer / light emitting layer / cathode c) anode / light emitting layer / electron transport layer / cathode d) anode / hole transport layer / light emitting layer / electron transport layer / cathode (here, / § number indicates each The meaning is the same.). The layers are adjacent to each other and are laminated. The following is here. The light-emitting layer refers to the layer that has the function of transporting holes ... =, and the function of transporting electrons by holes. , !! The transport layer refers to the object as a charge transport layer. 'Sub-transport layer and hole-transport layer total * The light-emitting layer and the hole are trapped above the __ layer. The transport-layer and the electron-transport layer can be used independently. 2: The charge transfer provided adjacent to the electrode is well documented. Those who have the effect of charge implantation from the electrode are generally special ~ The driving element of the low element is the implantation layer.) The twist is the electrical implantation layer (hole implantation layer, electrons, and 'for the improvement of the improvement of the implantation of the electrode and the electrode, can be connected with the electricity:; :: : Adhesive or the charge layer from the electrode or the thickness of 2 or less. Set the charge implantability or prevent the incorporation of rain, etc. * Y ', also to improve the interface's close adhesion ^ , 可 , 恭 * Into a thin buffer layer. Interpolation of the transport layer or the light-emitting layer = the order or number of laminated layers, and the thickness of each layer can be considered as appropriate or under the durability of the component. Use. Inshore: 'Mid-month. There is a charge implantation layer (electron implantation layer, hole implantation ... South molecular LED can be exemplified as: adjacent to the cathode and provided with electricity 314723 47 200403327 He implantation layer Polymer LED and polymer LED adjacent to the anode and provided with a charge implantation layer. For example, the following can be specifically mentioned: e) to p). E) Anode / charge implantation layer / light emitting layer / Cathode f) anode / light-emitting layer / charge-implanted layer / cathode g) anode / charge-implanted layer / light-emitting layer / charge-implanted layer / cathode h) electrode / electrical Charge implantation layer / hole transfer layer / light emitting layer / cathode 0 anode / hole transport layer / light emitting layer / charge implant layer / cathode J) anode / charge implant layer / air six pass wheel child implant layer / Cathode wood-wrapped implant layer / Light-emitting layer / Charge transport layer / Cathode U Anode / Light-emitting layer / Electron transport layer / Charge implant layer / Cathode m) Anode / Charge implant layer / Light-emitting layer / Electronic ™ layer / Electricity implantation thickness / Insurance s) Anode / Charge-implanted sound / a IW pole 0) Anodizing, Γ Transport layer / Light-emitting layer / Charge transport layer / Cathode 17 28 Knowledge layer / Light-emitting layer / Electronic transmission P) Supporting / Thousand and Four Ding 1 Tracing layer / Er Ho implant layer / Cathode pole / -Electro He implant layer / Hole transfer layer / Luminous implant layer / Cathode electric sensor layer / Charge charge implant A specific example of the layer-into-layer can be exemplified as: "containing layer '· via the anode and hole transport · u knife

刺t 層之間,而含有呈右陽代U 化兩Μ, 專知材料的中間之值之離子 电位(potential)的材料之層;離子 層之間,而含有呈有^^ f 極與電子傳輪 # 有匕極材料與電子傳輸屌中所人Μ + 傳輪材料的中間之值之電子親和…層中所3的電子 、、 卞親和力的材料之層等。 如上逑電荷植入層含有導八 電性高分子之雪氣俥導戶π刀子的層時,則該導 “度較佳為以上】〇3S/cm 3)4723 48 200403327 "~p 而如為減少發光像元間之漏# 10'5S/cm .泄笔^時,則較佳為 八上l〇-S/cm以下,更估炎 以下。 為1〇〇S/cm以上l〇iS/cm I《,為使該導電性高分子泰々 ^S/cm ^ , l α; <包乳傳導度作成10- ^ 上 S/Cm以下起見,對該導兩秘古乂 (doPe)適去 今%丨生同分子中摻雜 田尚隹子。 將摻雜的離子之種類,如係处〜 如係電子始X Θ 、二八植入層則為陰離子, 卞植入層則為陽離子。 乙烯磺酸離子、”石m 子之例可例示如··聚苯 卞 /兀本石頁酸_子、摄 子之例可例-^^月旬石頁酸離子等,而陽離 J 了例不如··鋰離子、鈉離 子等。 鉀離子、四丁基銨離 電荷植入層之膜厚可例如為 為2如万至50nm。 m至lOOmn,而較佳 因為電荷植入層的材料, + 材料問& M ^ '攸电極或與相鄰接的層之 何卄間的關係上適當選擇即 生物、衆暌。八3甘/ a 了例不如··聚苯胺及其衍 χΚ _ %及其竹生物、聚 伸乙·说B甘 及其釘生物、聚伸苯基 申烯及其衍生物、聚伸噻吩 菸甘/ , ,T 〇佈及其衍生物、聚喹 林及其衍生物、聚喹喔啉及苴 右—# > ”何生物、在主鏈或支鏈上含 有方無胺構造的聚合物等之導 駄菁等)、碳等。 之¥…分子、金屬酞菁(銅 膜厚2_以下之絕緣層,係具有使電荷植入容易進 :的:編。亡述絕緣層之材料,可舉如:金屬氟化物、 孟屬氧化物、,機絕緣材料箄& 十寻5又置有朕厚2nm以下之 、电緣層的咼分子led可舉如.盘卩人士 牛如·與^極相鄰接而設置有膜 314723 49 200403327 厚2nm以下之絕緣層的高分子LED、與陽極相鄰接而設 置有膜厚2nm以下之絕緣層的高分子LED。 具體可例舉如:以下之…至ab)之構造。 q)陽極/膜厚2nm以下之絕緣層/發光層/陰極 0陽極/發光層/膜厚2nm以下之絕緣層/陰極 s)陽極/膜厚2nm以下之絕緣層/發光層/膜厚2nm以下之 絕緣層/陰極Between the t-layers, there is a layer containing a material with an ion potential of the right masculine U, two M, known as the intermediate value of the material; between the ion layers, there is a ^^ f pole and electron transmission轮 # There is an electron affinity in the middle of the dagger pole material and the human M + transfer material in the electron transport unit ... the electrons in the layer 3, the layer of the material of the affinity unit, etc. As mentioned above, when the charge implantation layer contains a layer of snow gas that conducts an electric polymer, and a layer of a π knife, the guide "preferably is above." 〇3S / cm 3) 4723 48 200403327 " ~ p In order to reduce the leakage between the light-emitting pixels # 10'5S / cm. When the pen is ventilated, it is preferably below 80-S / cm, more preferably below inflammation. It is 100S / cm or more and 10iS. / cm I ", in order to make the conductive polymer Tai々 ^ S / cm ^, l α; < the milk-conducting conductivity is made 10- ^ up to S / Cm, the guide two secret ancient 乂 (doPe ) It is suitable for doping Tianshang Zongzi in the same molecule. The type of ions to be doped, such as the Department ~ If the electrons are X Θ, the implanted layer is anion, and the Er implanted layer is cation. Examples of vinyl sulfonate ions, "stone m" can be exemplified, such as · polyphenylene oxide / wooden slate acid, and photographic examples can be exemplified-^ ^ month end luteal ions, etc. Examples are not as good as lithium ion, sodium ion, etc. The film thickness of the potassium ion and tetrabutylammonium ion-implanted charge layer may be, for example, 2 to 50 nm. m to lOOmn, and it is preferred because the material of the charge implantation layer, the material, and the relationship between the electrode or the adjacent layer are appropriately selected, that is, biological and public. 8 3 Gan / a example is not as good as ... polyaniline and its derivative χκ_% and its bamboo creatures, polyethene · B Gan and its nail organisms, polyphenylene sene and its derivatives, polythiophene smoke Gan /,, T 〇 cloth and its derivatives, polyquinine and its derivatives, polyquinoxaline and hydrazone — # > "He Biao, a polymer containing a square amine structure on the main chain or branch chain Etc., etc.), carbon, etc. ¥ ... molecules, metal phthalocyanines (copper film thickness 2_ or less, an insulating layer that has an easy to implant charge charge: Examples include: metal fluorides, mongolian oxides, and organic insulating materials & Shiki 5 and 咼 molecule leds with an electrical edge layer of 朕 2nm thick and below can be exemplified. A polymer LED with an insulating layer having a thickness of 2 nm or less is arranged adjacent to the electrodes 314723 49 200403327, and a polymer LED having an insulating layer with a thickness of 2 nm or less is provided adjacent to the anode. Specific examples include the following: From ... to ab). Q) anode / insulating layer / film thickness below 2nm / cathode 0 anode / emissive layer / insulating layer / cathode below 2nm s) Electrode / insulating layer of a thickness of 2nm or less / light emitting layer / thickness of 2nm or less of the insulating layer / cathode

t) 陽極/膜厚2nm以下之絕緣層/空穴傳輸層/發光層/陰極 u) 陽極/空穴傳輸層/發光層/膜厚2_α下之絕緣層/陰極 v) 陽極/膜厚2nm以下之絕緣層/空穴傳輸層/發光層/膜厚 2nm以下之絕緣層/陰極 順極/膜厚2謹以下之絕緣層/發光層/電子傳輸層/陰極 咖極/發光層/電子傳輸層/膜厚2nm以下之絕緣層/陰極 y)陽極/膜厚2nm以下之絕緣層/發光層/電子傳輸層/膜厚 2nm以下之絕緣層/陰極 Z)陽極/膜厚2nm以下之絕緣層/空穴傳輸層/發光層/電 傳輸層/陰極 aa) 陽極/空穴傳輸層/發光層/電子傳輸層/膜厚2nm以下之 絕緣層/陰極 ab) %極/肤厚2nm以下之絕緣層/空穴傳輸層/發光層/電子 傳輪層/膜厚2nm以下之絕緣層/陰極 本發明之高分子LED中的發光層之膜厚,由於所用 的材料而最適值有所不同之故’按驅動電壓及發光效率能 成為恰當的值之方式選擇即可,惟例如為從〗n m至 I此 314723 50 200403327 較佳為2nm至500nm,更佳為5nm至200nm。 本發明之高分子LED中,對發光層中可混合使用上 述高分子化合物以外之發光材料。又,在本發明之高分子 LED中’含有上述高分子螢光體以外之發光材料的發光 層’可積層含上述高分子螢光體旳發光層。 該發光材料,可使用周知者。在低分子化合物中,例 如可使用·蔡衍生物、蒽或其衍生物、!(Perylene)或其 竹生物、4々甲川(ρ 〇 1 y m e t h i n e)系、咕σ頓(X a n t h e n e)系、香 豆素(cumalin)系、花青脊(cyanine)系等之色素類、經基 嗤啉或其衍生物之金屬配位化合物、芳族胺、四苯基環戊 二烯或其衍生物、或四笨基丁二烯或其衍生物等。 具體而言,可使用例如曰本專利特開昭57_5丨78 1號, 同5 9-1 943 93號公報中所記載等習知者。 發光層之成膜之方法並不制定,惟可例示使用從溶液 之成膜的方法。從溶液之成膜方法,可使用如:旋轉塗佈 法、洗注成型4、微凹版塗佈法、凹版塗佈法、鑲條塗佈 法、輥式塗佈:¾、鋼絲桿塗佈法、浸潰塗佈法、喷霧塗佈 法、網版印刷法、柔版印刷法、膠版印刷法、t墨印刷法 等之塗佈法。 〜一〜,了干則/百町,尸汀4史用 的空穴傳輸材料可例示如·万 如·聚乙烯基咔唑或其衍生物、 石夕烧或其衍生物、在支鏈哎主 — A主鏈上具有方族胺的聚矽氧 衍生物、吡唑啉衍生物、关 一 方胺何生物、达(StUbene)衍生 物、二本基一胺衍生物、平贫^斗、 ♦ +胺或其衍生物、聚噻吩或 31472 51 200403327 衍生物、聚吡咯或其衍生 生物、或者聚(2,5-伸噻吩A伸二對伸笨基伸乙烯)或其衍 在此等之中,以: 乙岣或其衍生物者。 立行生物/ * '乙烯基咔唑或其衍生物、聚矽烷或 其何生物、在支鏈或主鏈上呈 、P柯斗舲取— ,、有方私胺化合物基的聚石夕氧 烷何生物、聚笨胺或其衍 # ^ A ^ r ,χ 來嗥吩或其衍生物、聚(對 伸本基伸乙烯)或其衍生物、 。戈苴衍生物耸βγ 次者永(2,5-伸噻吩基伸乙烯) 味* *甘, 傳軚材料為佳’更以聚乙烯基 咔唑或其衍生物、聚矽烷 ^ ^ ^ . ,、订生物、在支鏈或主鏈上具 有方知胺的聚矽氧烷衍生物 ..S!f „ ^ 籾马取佳。而低分子之空穴傳輸 材枓:以使用分散在高分子黏合劑者為理想。 聚乙烯基咔唑或其衍生物, 陽離子聚合或自由基聚合而製得:…乙細基單體藉由 t ^ &或其柯生物可例示如:化學評論期刊(Chem· 弟⑼卷,⑽頁(1989年)出版,英國專利gb23〇〇i96 號公開說明書所記載之化合物等。合成方法亦可使用此等 中所。己載之方法,但以奇萍法最為適用。 聚石夕乳燒或其衍生物,由於石夕氧烧骨架構造中殆益* 穴傳輸性之故,以在支鏈或主鏈上具有上述低分子空:: 輸材料之構造者為適用。特別是可例示如:在支鏈或主鍵 上具有空穴傳輸性之芳族胺者。 空穴傳輪層之成膜方法並不特別限定’惟在低分子空 穴傳輸材料方面,可例示如:從與高分子黏合劑的二合: 液而成的成膜之方法。又’在高分子空穴傳輪材料方二 則可例不:由溶液所成的成膜之方法。 314723 52 200403327 從溶液而成的成膜所使用之溶液 傳輸㈣者,i不特別限定。該溶媒可例示如^空= 氯:烷、二氯乙烷等之氯系溶媒;四氫呋喃等之醚 — 甲本、二甲笨等之芳族烴系溶媒、丙_、甲基 :、二 之酮系溶媒、乙酸乙酯、 土 土 S同等 之醋系溶媒。 m…基-纖素乙酸能等 從溶液而成的旋轉塗 凹版塗佈法、鑲條塗 浸潰塗佈法、噴霧塗 從/谷液而成的成膜方法可使用 佈法、澆注成型法、微凹版塗佈法 佈法、親式塗佈法、鋼絲桿塗佈法 佈法、網版印刷法、柔版印刷法、膠版印刷法二务塗 等之塗佈方法。 貝W P刷 所混合的高分子黏合劑以不過度阻礙電荷t) Anode / Insulation layer / Hole transport layer / Light emitting layer / Cathode below 2nm u) Anode / Hole transport layer / Emitting layer / Insulation layer / Cathode below 2_α v) Anode / Thickness below 2nm Insulation layer / hole transport layer / light-emitting layer / insulation layer with a thickness of less than 2nm / cathode forward / insulation layer / light-emitting layer / electron transport layer / cathode cathode / light-emitting layer / electron transport layer / Insulating layer with a thickness of less than 2nm / Cathode y) Anode / Insulating layer with a thickness of less than 2nm / Emitting layer / Electron transport layer / Insulating layer with a thickness of less than 2nm / Cathode Z) Anode / Insulating layer with a thickness of less than 2nm / Hole transport layer / Light emitting layer / Electric transport layer / Cathode aa) Anode / Hole transport layer / Light emitting layer / Electron transport layer / Insulation layer with thickness less than 2nm / Cathode ab)% Insulation layer with skin thickness less than 2nm / Hole transport layer / Light-emitting layer / Electron transfer layer / Insulation layer with a thickness of less than 2nm / Cathode The film thickness of the light-emitting layer in the polymer LED of the present invention is different due to the material used. The driving voltage and the luminous efficiency can be selected as appropriate values, but for example, it is from nm to I. This is 314723 50 200403327. Of 2nm to 500nm, 200nm to 5nm is better. In the polymer LED of the present invention, a light-emitting material other than the above-mentioned polymer compound may be mixed and used in the light-emitting layer. Further, in the polymer LED of the present invention, the "light-emitting layer containing a light-emitting material other than the above-mentioned polymer phosphor" may be laminated to include the above-mentioned polymer phosphor and a light-emitting layer. A known material can be used for this luminescent material. Among the low-molecular compounds, for example, Tsai derivatives, anthracene or its derivatives, can be used! (Perylene) or its bamboo organisms, pigments such as 4々 甲 川 (ρ 〇1 ymethine) system, X anthene system, cumalin system, cyanine system, etc. Metal complexes of oxoline or its derivatives, aromatic amines, tetraphenylcyclopentadiene or its derivatives, or tetrabenzyl butadiene or its derivatives. Specifically, those skilled in the art can be used, for example, as described in Japanese Patent Application Laid-Open No. Sho 57_5 丨 78 No. 1 and 5 9-1 943 93. The method for forming a light-emitting layer is not specified, but a method using a film from a solution can be exemplified. From the film forming method of the solution, spin coating method, washing molding 4, micro gravure coating method, gravure coating method, insert coating method, roll coating method: ¾, wire rod coating method can be used. , Dip coating method, spray coating method, screen printing method, flexographic printing method, offset printing method, t ink printing method and other coating methods. ~~~ The hole transporting materials used in the history of Kangan / Hakucho, Shiten 4 can be exemplified by: Wanru · Polyvinylcarbazole or its derivative, Shixiyao or its derivative, in a branched chain. Main — A polysiloxane derivative with square amines on the main chain, pyrazoline derivatives, monoamines, StUbene derivatives, dibenzylamine derivatives, pentamine, ♦ + Amine or its derivative, polythiophene or 31472 51 200403327 derivative, polypyrrole or its derivative, or poly (2,5-thiophene A double phenylene vinylene) or its derivative in these, : Ethyl or its derivatives. Lixing Biotechnology / * 'Vinyl carbazole or its derivatives, polysilane or any other organism, presenting on the branch or main chain, P-copper extraction —, polyethoxylates with a private amine compound base Any organism, polybenzylamine or its derivative # ^ A ^ r, χ to phenphene or its derivative, poly (p-benzylidene) or its derivative,. Ge 苴 derivative β γ second time yong (2,5-thienyl vinylene) taste * * Gan, good transmission material is more 'Polyvinyl carbazole or its derivative, polysilane ^ ^, Biosynthetic derivatives, polysiloxane derivatives with well-known amines on the side chain or main chain .. S! F ^ ^ is best. Low-molecular hole-transporting materials 枓: used to disperse in polymer binding Polyvinylcarbazole or a derivative thereof, which is prepared by cationic polymerization or radical polymerization: ... ethylene monomers can be exemplified by t ^ & · Di Yi Juan, published on the title page (1989), compounds described in British Patent gb23001i96, etc. Synthetic methods can also be used in these methods. The methods already included, but the Qiping method is most applicable The polylithic yakiniku or its derivative is suitable for those who have the above-mentioned low-molecular vacancies on the branch or main chain due to the benefits of the * hole transport properties in the oxidative structure of the oxidized stone. In particular, for example, an aromatic amine having a hole-transporting property in a branch or a main bond can be exemplified. The film-forming method of the transfer layer is not particularly limited, but in the case of low-molecular hole-transporting materials, it can be exemplified by: a method of forming a film from a combination of a polymer binder and a liquid. The hole transfer wheel material can be exemplified by the method of forming a film from a solution. 314723 52 200403327 From the solution used for film formation from a solution, i is not particularly limited. The solvent can be exemplified as ^ Empty = Chlorine: Chlorine solvents such as alkane, dichloroethane, etc .; Ethers such as tetrahydrofuran-aromatic hydrocarbon solvents such as methylben, dimethylbenzyl, propane, methyl :, dione ketone solvents, acetic acid Ethyl acetate, soil S are equivalent vinegar-based solvents. M ... based-cellulose acetic acid can be made from solution by spin-coating gravure coating method, strip coating dipping coating method, spray coating from / valley For the film formation method, cloth method, casting method, micro gravure coating method, cloth coating method, wire rod coating method, cloth method, screen printing method, flexographic printing method, and offset printing method can be used. Coating method such as coating. The polymer binder mixed with the WP brush does not excessively hinder the charge.

佳,又’對可視光的吸收不會太強者為適用。該古八L 合劑可例示如:聚碳酸酯、聚丙烯酸酯 =刀‘ ^ ^ κ T基丙烯酸酷、 :曱基甲基丙雜1笨乙稀、聚氯化乙缚、聚、 空穴!輸層之膜厚其最適值因所使用的材料而有所不 同’只要每擇按驅動電壓及發光效率 \尤欢羊所成恰當的值即可, 惟至少需要不致產生針孔厚度,如過 - 壓增高而不宜。因而,該空穴傳輸声 、兀之驅動電 寻知層之振厚則例如為從lnm 至⑽’以2nm至500nm為佳’又以5nm至200騰為 更佳。 如本發明之高分子LED具有電子傳輪層時,可使用 習知之電子傳輸材料’可例示如:嗜二。坐衍线、蒽醒二 314723 53 200403327 曱烧或其衍生物、笨酿或其衍生物、萘醌或其衍生物、蒽 酉昆或其衍生物、四氰基蒽艦二甲烧或其衍生物、芴s同衍生 物、二苯基二氰基乙烯或其衍生物、二吩醌衍生物、或者 8 -羥基喹啉或其衍生物之金屬配位化合物、聚喹啉或其衍 生物、聚喹喔啉或其衍生物、聚芴或其衍生物。 其中’从^ — 土何生奶 +日比我头何王职/、恩Η比或其 衍生物、或者8 -經基嘆琳或其衍生物之金屬配位化合物、 聚喹啉或其衍生物、聚喹喔啉或其衍生物、聚芴或其衍生 物為佳,而以2-(4-聯苯基)-5-(4-第三丁基苯基)-1,3,心嗜 二唑、苯醌、蒽醌、參(8 -喹啉酚)鋁、聚喹啉為更佳。 電子傳輸層之成膜法並無特別限定,惟在低分子電子 傳輸材料中可例示:藉由從粉末而成的真空沈積法、或者 〇谷液或熔融狀態而成的成膜之方法,而高分子電子傳輸 材料則可例示:藉由從溶液或熔融狀態而成的成膜之方别 去。在從溶液或熔融狀態而成的成 合劑。 」1汗用回分子黏 從溶液而成的成膜所使用之溶、 傳輸材料及/或高分子* ”,衹要是能溶解電子 可例示如:氯仿、二氯甲烧、二々#寸別限疋。該溶媒 氫呋喃等之醚系溶媒;甲苯、二虱乙烷等之氯系溶媒;四 丙酮、甲基乙基甲酉同等之酮系溶—甲笨等之芳族烴系溶媒; 甲基溶纖素乙酸_等之酯系溶媒。,乙醆乙酿、乙酸丁酿、 攸:谷液或熔融狀態而成的成膜 〜主成型法、微凹版塗佈、去’去可扭用:旋轉塗佈 *、凹版塗佑.广 <佈法、鎮條塗佈 314723 200403327 法、輥式塗佈法 法、網版印刷法 專之塗佈法。 鋼絲桿塗佈法、浸潰塗佈法、噴霧冷佈 系版印刷法、膠版印刷法、喑 貝主、印刷法 卜又二 子黏合劑以不會過份阻礙電荷傳輸者為 例Γί的吸收不會太強者為適用。以分子黏 丄如:柳-乙稀物)、聚苯胺或其衍生物、 广或其衍生物、聚(對伸苯基伸乙稀)或其衍生物j “5-伸噻吩基伸乙烯)或其衍生物 : 醋、聚甲基丙烯酸酿、γ甲其田盆乂 永丙烯酸 聚氣化乙嫌丙烯酸醋、聚笨乙烯、 化乙坪、或者聚矽氧烷等。 電子傳輪層之膜展1 g、# Μ ^ 同,只要選擇按驅動電=Γ/Γ用的材料有所不 厂堅增心:針孔“,如過厚,則元件之驅動電 至U"7’該電子傳輸層之膜厚則例如為從lnm 更佳12請至5〇〇軸為佳’又以5麵至細麵為 本發明之高分子τ p 極、形成右 ED的基板,祇要是當形成ΐ 士成有機物之層時不 π 螭、塑膠、高分m “b者即可’而可例示如·· 則相對之+ ’.、矽基板等。如係不透明的基板時 本=3透明或半透明者為佳。 明或不透明中&陽極及陰極而成的電極之至少-方係 ^ ,而以陽極側為透明或半透明者。 該陽極之好赳π % 人卞是明者為佳。 之金屬β隊 、α木用導電性之金屬氧化物膜、半透 興-r媒寺。亘體 e •氧化銦、氧化鋅、氧化錫以 314723 55 200403321 使用由其等之和人4 …u 铋口物的銦.錫.氧化物(ιτο)、銦.鋅· 乳化物寺而成的導雷 銘、銀、鋼等·、节性破壤所製作的膜(NESA等)’或金、 製作方法可舉:=T〇、銦.鋅.氧化物、氧化錫為佳。 法算。 + 二沈積法、濺鍍法、離子電鍍法、電鍍 • ’该陽極亦可' p m 其衍生物箄> # ^用聚苯胺或其衍生物、聚噻吩或 9寺之有機透明導電膜。 陽極之膜厚可考 处 擇,惟例如A …、 牙透性及電氣傳導度而適當選 馮 1 〇nm 至 1 〇 ~ 以50nm至 m,而以20nm至1 // m為佳, 芏50〇nm為更佳。 又,在陽極上,為交 一 酞菁衍生物、導電性言八 行電荷植入起見,可設置由 化物或金屬氟化:、::::炭而成的層、或者由金屬氧 以下之層。 巴材料等而成的平均膜厚2nm 在本發明之高分子LEd 小的材料為佳。可#田η 刼用的陰極材料以功函數 ,-, J才木用例如:鈿卜 鎂、鈣、鰓、鋇、鋁、銳、釩、’:、鈉、鉀、铷、鉋、鈹、 铽、餚等之金屬,及其等二、鋅、釔、銦、鈽、釤、銪、 "重以上與金、銀、始、、銷、2 :重以上之合金、或者其等t 1種的合金、石墨或石墨層I、鈦、鈷、鎳、鎢、錫中 鎂-銀合金、鎂-銦合金、鎂-鋁八合物等。合金之例可舉··It is suitable if the absorption of visible light is not too strong. The ancient eight L mixture can be exemplified by: polycarbonate, polyacrylate = knife ^ ^ κ T-based acrylic cool,: fluorenyl methyl propyl 1 stylene, polyvinyl chloride, poly, cavity! The optimal value of the film thickness of the transport layer will vary depending on the materials used. 'As long as the appropriate values are set according to the driving voltage and luminous efficiency, you Huanyang will only need to avoid the occurrence of pinhole thickness. -Unfavorable pressure increase. Therefore, the thickness of the hole-transporting acoustic driving layer is preferably from 1 nm to ⑽ ', preferably from 2 nm to 500 nm, and more preferably from 5 nm to 200 tens. For example, when the polymer LED of the present invention has an electron transfer layer, a conventional electron transfer material can be used. Zanyan line, Anthracene 314723 53 200403327 Burnt or its derivatives, Stupid or its derivatives, Naphthoquinone or its derivatives, Anthracene or its derivatives, Tetracyanoanthracene or its derivatives Compounds, hydrazine derivatives, diphenyl dicyanoethylene or its derivatives, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or its derivatives, polyquinolines or its derivatives, Polyquinoxaline or a derivative thereof, polyfluorene or a derivative thereof. Where 'from ^ — Tu Ho Sheng Milk + Ribei Tou Ho Wang Dui /, Enbei or its derivatives, or 8-Metal complexes based on Kirin or its derivatives, polyquinoline or its derivatives It is preferred that the compound, polyquinoxaline or a derivative thereof, polyfluorene or a derivative thereof, and 2- (4-biphenyl) -5- (4-third butylphenyl) -1,3, Diazine, benzoquinone, anthraquinone, ginseng (8-quinolinol) aluminum, and polyquinoline are more preferred. The film-forming method of the electron transport layer is not particularly limited, but examples of the low-molecular electron-transport material include a vacuum deposition method made of powder, or a film formation method made of gluten solution or molten state, and An example of a high-molecular electron-transporting material is a method of forming a film from a solution or a molten state. A composition made from a solution or a molten state. "Solution, transmission material, and / or polymer used for film formation from the solution of 1 Khan's molecular adhesion from solution." As long as it can dissolve electrons, it can be exemplified by: chloroform, dichloromethane, erbium #inchbe Restriction: Ether solvents such as hydrogen furan; chlorine solvents such as toluene and dioxane; ketone solvents equivalent to tetraacetone and methyl ethyl formamidine—aromatic hydrocarbon solvents such as methylbenzyl; Ester solvents such as methyl lysin, acetic acid, etc., acetic acid, acetic acid, butyl acetate, etc .: film formation from cereal or molten state ~ main molding method, micro gravure coating, and de-twistable Application: spin coating *, gravure coating. Wide < cloth method, ballast coating 314723 200403327 method, roll coating method, screen printing method coating method. Wire rod coating method, dipping The coating method, spray-cold cloth printing method, offset printing method, puppet master, and printing method are two-phase adhesives. For example, those who do not excessively hinder charge transport are taken as examples. Those whose absorption is not too strong are applicable. Take molecules Adhesives such as: willow-ethylene diene), polyaniline or its derivatives, polyaniline or its derivatives, poly (p-phenylene diene) ) Or its derivatives j "5-thienyl vinylene) or its derivatives: vinegar, polymethacrylic acid, γ-methyl acetic acid, polyacrylic acid, polyethylenic acid, vinyl acetate, polyethylen, Or polysiloxane. The film thickness of the electron transfer layer is 1 g, # Μ ^ Same, as long as the material selected for the driving power = Γ / Γ is not factory-strengthened: pinhole ", if it is too thick, the driving power of the component to U & quot 7 'The film thickness of the electron transport layer is, for example, preferably from 1 nm to 12 to 500 axes. The substrate with the right ED is the polymer τ p pole of the present invention with 5 to fine surfaces, As long as it is not a π 成, plastic, high score m "b" when forming a layer of organic matter, and can be exemplified as "+"., Silicon substrate, etc. For opaque substrates, this = 3 is transparent or translucent. An electrode made of bright or opaque & anode and cathode is at least -square ^, and the anode side is transparent or translucent. The anode is better than π% of people. Metal beta team, conductive metal oxide film for alpha wood, semi-transparent-r medium temple. Carcass e • Indium oxide, zinc oxide, tin oxide 314723 55 200403321 made from the sum of 4 ... u bismuth indium. Tin. Oxide (ιτο), indium. Zinc, emulsion Guiding Ming, silver, steel, etc., film (NESA, etc.) or gold made of joints, can be produced by the following methods: = T0, indium, zinc, oxide, and tin oxide. Law. + Two-deposition method, sputtering method, ion plating method, electroplating • ‘The anode may also be’ p m and its derivatives 箄 ># ^ Use polyaniline or its derivative, polythiophene, or an organic transparent conductive film. The thickness of the anode can be selected, but for example, A ..., tooth permeability and electrical conductivity, it is appropriate to select Feng 10nm to 10 ~ 50nm to m, and preferably 20nm to 1 // m, 芏 50 0 nm is more preferable. In addition, on the anode, a layer made of a compound or metal can be provided for the purpose of implanting a phthalocyanine derivative and a conductive charge of eight lines: or a layer made of carbon or a metal oxide or less Of layers. A material having an average film thickness of 2 nm made of a bar material or the like is preferably a material having a small polymer LEd according to the present invention. The cathode material that can be used for the field has a work function,-, J is used for example: magnesium, calcium, gill, barium, aluminum, sharp, vanadium, ':, sodium, potassium, thallium, planer, beryllium, Metals such as ytterbium and food, and their equivalents, zinc, yttrium, indium, osmium, ytterbium, osmium, " more than gold, silver, starting, pin, 2: alloys with more than weight, or their equivalent t 1 Kinds of alloys, graphite or graphite layer I, titanium, cobalt, nickel, tungsten, magnesium-silver alloys in tin, magnesium-indium alloys, magnesium-aluminum eight compounds, and the like. Examples of alloys ...

金、鋰-鎂合金、鋰-銦合金、S公金、銦-銀合金、鋰-鋁合 為2層以上之積層構造、心呂合金等。可作成陰極 陰極之膜厚,可考 A 擇,惟例如為I〇nm至】::广傳導度或耐久性而適當選 A ni而以20nm至} a m為佳, 314723 56 200403327 以50nm至500nm為更佳。 陰極之製作方法可採用:真空 、、 將金屬薄膜進行熱壓接的層壓法等。^ 鍍法、以及 機物層之間設置由導電性高分子而成的’、可在陰極與有 ^ 成的層,或者由金屬氧 4物或金屬亂化物、有機絕緣 以τ ^ ^ ^ 4竹寻而成的平均膜厚2nmGold, lithium-magnesium alloy, lithium-indium alloy, S-gold, indium-silver alloy, lithium-aluminum have a laminated structure of two or more layers, Xinlu alloy, and the like. The thickness of the cathode can be made. The choice of A can be considered, but for example, it is 100nm to】 :: wide conductivity or durability, and A ni is appropriately selected, preferably 20nm to} am, 314723 56 200403327, 50nm to 500nm. For the better. The manufacturing method of the cathode can be: vacuum, lamination method of thermal compression bonding of metal thin films, and the like. ^ The plating method and the organic material layer are provided with a conductive polymer, a layer that can be formed on the cathode, or a metal oxide or a metal chaotic compound, and an organic insulation with τ ^ ^ ^ 4 Takenizumi's average film thickness is 2nm

下之層’或在製作陰極後,裝貼有保護該高分子LED =的保護層。為能長期安定使用該高分子咖起見, 外縣m以裝貼保護層及/或保護罩者為佳。 該保護層可採用高分子化入物、 刀于化口物金屬氧化物、金屬氟 化物、金屬硼化物等。 ^ ^ 又保瘦罩可採用玻璃板、在表面 貫施有低透水率處理的询峡 千、里的塑恥板寻,而以使用熱效果樹脂或 光固化樹脂將該罩緊貼开杜其k μ + 4 i 一 $貼兀件基板的方法為適用。如使用間 隔片以維持空間時,則可容易防止元件遭受損傷。 八如對該空間内封入如氮或氬等的惰性氣體時,則可防 ^陰極之氧化,如再在該空間内設置如氧化鋇等之乾燥 劑’即可容易抑制在製造過程中所吸附的水份所帶給元件 的損傷。以採取此中之任一個以上之對策者為佳。 又,在由陽極及陰極而成的電極間具有電荷傳輸層及 卷光層,而该電荷傳輸層亦可含有本發明之高分子化合物 之高分子LED。 本發明之鬲分子發光元件,可作為平面狀光源、段顯 不(segment display)裝置、點矩陣(dot matrix)顯示裝置、 液晶顯示裝置之背光(back light)使用。 如使用本發明之高分子LED以獲得平面狀之發光 314723 200403327 時’可將面狀之陽極與陰極按重疊之方式配置即 為獲得圖型(―)狀之發光時,則冑:在前平面’ 先几件表面設置有裝設圖型狀之窗孔的遮罩之方法。/ 將非發光部之有機物層形成為極度厚以作成實質上非^ =二將陽極或陰極之任—方或雙方之電極形成為圖型 按獨立方;依此寻中之任—方法形成圖型,並將幾個電極 字式配置為能0N/0FF(通/斷),即可製得能顯示數 子或文子、簡單記號的段類型之顯示元件。再纟 點矩陣元件時,則 … 成 :不亚按能垂直相交之方式配置即可。藉由將複數種發) =相同的高分子營光體分開塗佈的方法,或 翻_ .. 。。的方法,即能實現部份彩色顯示、多色 :不。點矩陣元件亦能進行無源驅動(passive driving), d、了共TFT(溥膜電晶體)組合而進行有源驅動(active 一g)。此等顯示元件’可作為電腦、電視、行動終端 話、汽車導航㈣、視訊攝影機之取景器等的 頭不裝置使用。 ^ 再者刖4平面狀之發光元件係-種自生光薄型,而 可適用於液晶蟝示壯婆々北 而 狀之照明用光源^衣,月光用平面狀光源或者作為平面 ’、又,如使用撓性基板,則亦可作為曲面 狀之光源或顯示裝置使用。 、,以下,為更詳細說明本發明而列示實施例,惟本發明 亚不被此等實施例所限定。 在it匕,平土A 曰 ^ 刀子里係以四氫咲喃為溶媒,依凝膠滲透 314723 58 200403327 μ普法(GPC)所求得的聚苯乙稀換算之數平均分子量 貫施例1 <單體1之合成> 使鞣花酸(ellagic acid)25g、及^溴代乂厂二甲基辛 烷22lg、及碳酸鉀60g在N,N_二甲基甲醯胺45〇g _ =上⑼ °C下進行反應28小時。冷卻此反應液後靜置,結果分離 二、層接著回收上層。使用離子交換水洗淨所回收的 溶液。反覆水洗至洗淨水成為中性為止。接著,將此油層 進行減壓乾燥後,使用矽膠管柱,藉由流動相曱苯/己烷 ,將未反應卜溴代-3,7-二?基辛烷及鞣花酸之四烷 氧取代物去除後,#由流動相㈣,將二烷氧取代物加以 刀取攸所为取的,谷液使溶媒進行減壓餾除後加以減壓乾 燥’製得二烷氧取代物6.5g。所得的二烷氧取代物,從 貝子核子共振譜(NMR)之化學位移以及-位及3,8位之 經基與i-漠代_3,7_二甲基辛烷間之反應性考察之結果, 推定為2,7-二經基-3,8-二(3,7_二曱基辛氧基Ηι]苯并吼 喃[5,4,3-cde][l]苯并吡喃 〇-二酮者。 將所得的化學物,稱為單體1。 <尚分子化合物1之合成> 將單體1與三氟甲烷磺酸酐反應所得的單體丨之三氟 甲烷磺酸醋0.59g、及9,9_二辛基_2,7_努二石朋酸乙二醇西旨 〇.37g、及碳酸鉀lg,溶解在甲苯2〇g及離子交換水2〇§ 中佼’在氮氣中沸#’進行系内之氮氣交換。在該溶液中 添加將鈀觸媒{Pd(PPh3)4}0.02g溶解在預先經以氮氣冒泡 314723 59 200403327 並脫氣的曱苯1 ml内的溶液。宇、、四 ^ 至,皿下撹拌1 〇分鐘後,在 1 00°C下進行反應5小時。力;仁广〆 、 ’反應係在氮氣環境中進 行。 將此反應液冷卻後,、、表士田# I俊添加甲本,分液後回收曱苯層。 使用1當里派度之鹽酸洗淨士卜甲贫 无/尹此曱本浴液後,再使用2%氨The lower layer 'or after the cathode is fabricated, a protective layer for protecting the polymer LED is attached. In order to use the polymer coffee stably for a long time, it is better to attach a protective layer and / or a protective cover to the outer county m. The protective layer may be made of a polymer compound, a metal oxide, a metal fluoride, a metal boride, or the like. ^ ^ You can also use a thin glass cover and a plastic plate with a low water permeability treatment on the surface, and use a thermal effect resin or light-curing resin to hold the cover close to it. The method of k μ + 4 i for attaching a substrate is applicable. When spacers are used to maintain space, it is easy to prevent damage to the components. Eight, if an inert gas such as nitrogen or argon is enclosed in the space, the oxidation of the cathode can be prevented. If a desiccant such as barium oxide is provided in the space, the adsorption during the manufacturing process can be easily suppressed Damage to components caused by water. It is better to take any one or more of these measures. In addition, a charge transport layer and a light coil layer are provided between the electrodes formed by the anode and the cathode, and the charge transport layer may also contain a polymer LED of the polymer compound of the present invention. The europium molecular light emitting device of the present invention can be used as a back light of a planar light source, a segment display device, a dot matrix display device, and a liquid crystal display device. If the polymer LED of the present invention is used to obtain a planar light emission 31723 200403327, 'the planar anode and the cathode can be arranged in an overlapping manner to obtain a pattern (-)-shaped light emission, then: 在: in the front plane '' The first method is to set a mask with a patterned window hole on the surface. / The organic material layer of the non-light emitting part is formed to be extremely thick so as to be substantially non-^ = 2. Either the anode or the cathode or both electrodes are formed into a pattern according to the independent party; follow any of these methods to form a diagram Type, and several electrode characters are configured to be 0N / 0FF (on / off), and a segment type display element that can display numbers, texts, and simple marks can be made. When the dot matrix element is clicked again, it is… as: it can be arranged in such a way that it can intersect vertically. By applying a plurality of types of hair) = coating method of the same macromolecules, or turning _ ... . Method, which can achieve partial color display, multi-color: No. The dot matrix element can also be passively driven. D. Active-g (common TFT) is used for active driving. These display elements' can be used as head units of computers, televisions, mobile phones, car navigation cards, viewfinders of video cameras, and the like. ^ Furthermore, 4 planar light-emitting elements-a thin type of self-generating light, which can be applied to liquid crystal display light sources ^ clothing, moonlight use a flat light source or as a plane ', and, such as A flexible substrate can also be used as a curved light source or display device. In the following, examples are described in order to explain the present invention in more detail, but the present invention is not limited to these examples. In it, Pingtu A. The knife uses tetrahydrofuran as a solvent, and the number average molecular weight of polystyrene based on the method of gel permeation (314723 58 200403327 μ) (GPC) is used throughout Example 1 & lt Synthesis of monomer 1> 25 g of ellagic acid, 22 g of dimethyl octane bromide, and 60 g of potassium carbonate were added to 45,0 g of dimethylformamide. = Reaction at 28 ° C for 28 hours. After cooling the reaction solution, it was allowed to stand. As a result, the second layer was separated, and then the upper layer was recovered. The recovered solution was washed with ion-exchanged water. Wash repeatedly until the washing water becomes neutral. Next, the oil layer was dried under reduced pressure, and then, using a silica gel column, the unreacted p-bromo-3,7-di? After removal of the tetraalkoxy substitutes of octane and ellagic acid, # the mobile phase is used to remove the dialkoxy substitutes by knife cutting. Dry 'to obtain 6.5 g of dialkoxy substitution. Observation of the obtained dialkoxy substituents from the chemical shifts of the nucleus resonance spectrum (NMR) of the shellfish and the reactivity between the-and 3,8 radicals and i-Mo_3,7_dimethyloctane As a result, it is presumed to be 2,7-diademyl-3,8-bis (3,7_diamidyloctyloxyΗι] benzoxan [5,4,3-cde] [l] benzopyridine Those who are ano-dione. The obtained chemical is referred to as monomer 1. < Synthesis of molecular compound 1 > The monomer obtained by reacting monomer 1 with trifluoromethanesulfonic anhydride. 0.59g of sour vinegar and 9,9_dioctyl_2,7_nuthiprate ethylene glycol 0.17g, and potassium carbonate lg, dissolved in 20g of toluene and ion-exchanged water 2〇§ Zhongjiao was boiled in nitrogen # for nitrogen exchange in the system. To this solution was added 0.02g of palladium catalyst {Pd (PPh3) 4} dissolved in degassed tritium which was previously bubbled with nitrogen 314723 59 200403327 The solution in 1 ml of benzene. Yu ,, and ^ ^, and stir for 10 minutes under the dish, then carry out the reaction at 100 ° C for 5 hours. Force; Ren Guangye, 'The reaction is carried out in a nitrogen environment. After the reaction solution was cooled, add a Koben to Table Shitian # 1, and After closing Yue benzene layer. When using a hydrochloric acid wash in degrees Shibo sent without lean A / Yin Yue present this bath, then 2% ammonium

水洗淨,最後使用離子$拖k、、杰W T又換水冼乎。將此甲苯溶液通過填 充有氧化鋁的管柱以精絮祛,脸& w # 了月衣後,將此甲苯溶液注入曱醇中再 加以沈;殿精製。回收所哇忐沾、+ 生成的沈;lx後,經過減壓乾燥而得 聚合物0 · 3 g。將此所得的辛八% 于们水合物%為高分子化合物1。 高分子化合物1之:^ 7、膝她μ ♦乙細換异之數平均分子量為2.0 X 104’而重量平均分+吾么 物所推定的南分子化合物]由 σ物1中所含反複單元之構造。Rinse with water, and finally use the ion $$ k, Jie W T and change the water again. This toluene solution was passed through a column filled with alumina to remove the fines. After the face & w # was cloaked, this toluene solution was poured into methanol and then sank; refined. The solute and the precipitate produced were recovered; after lx, the polymer was dried under reduced pressure to obtain 0.3 g of polymer. The obtained octanoate hydration% was polymer compound 1. Macromolecular compound 1: ^ 7. Knee her μ ♦ The number of sacrifice is different. The average molecular weight is 2.0 X 104 'and the weight average score + the estimated molecular compound of the South]. From the repeating unit contained in σ1 Of the structure.

<高分子化合物2之合成> 里為5 · 6χ 1 〇 。下列表示從飼裝 實施例2 將實施例1所得單體1盥二 一鼠甲烷磺酸酐反應所得| 體1之二氟曱烧石黃酸S旨 曰〇.63g及2,2、聯二吡啶〇.28g溶解 在四氫呋喃(脫水)3〇ζ中德,氣# + ^ 千 ^ 後虱虱中沸騰,進行系内之氮 氣交換。在該溶液中添加雙(1,5•環辛二稀)錄 ⑼㈣C0D)取5g,在室溫下搜掉⑺分鐘後升溫,在 314723 60 200403327 C下反應3小時。在此,反應係在氮氣環境中進行。 將此反應液冷卻後,添加25°/。氨水i〇mi/甲醇1〇〇ml/ 離子交換水20〇mi混合溶液,並攪拌約i小時。將此溶 ’夜在至溫下靜置一夜後過濾以回收所生成的沈澱。接著, 將此沈殿乾燥|,溶解在甲苯中。過濾以去除不溶物後, 將此溶液通過填充有氧化紹的管柱以精製。接著,將此溶 m甲_中再加以沈殿精製。时所生成的沈殿,並使 用乙醇洗淨後,經過減壓乾燥而得聚合物Q Q2g。將所得 的聚合物稱為高分子化合物2。 门刀子化&物2之聚笨乙稀換算之數平均分子量為 4.5X 1〇3’而重量平均分子量為7·2χ 1〇3。下列表示從飼 裝物所推定的高分子化合物2中所含反複單元之構造。 =外,使用偏光顯微鏡,在直交偏光下(cr〇ssnic〇i) 下觀㈣高分子化合物2之結果,從其結構(㈣叫判斷, 確認該咼分子化合物2為一種液晶。< Synthesis of polymer compound 2 > The following is obtained from Feeding Example 2 by reacting the monomer 1 obtained in Example 1 with chlorinated methanesulfonic anhydride | Difluoropyrrolite succinic acid S of body 1 is 0.63 g and 2,2 bipyridine. 〇.28g was dissolved in tetrahydrofuran (dehydrated) 3〇ζ, German, gas # + ^ thousand ^ boil in the lice, nitrogen exchange within the system. To this solution was added bis (1,5 • cyclooctane dilute) (COD), 5 g was taken out, it was searched at room temperature for ⑺ minutes, and the temperature was raised. The reaction was performed at 314723 60 200403327 C for 3 hours. Here, the reaction was performed in a nitrogen atmosphere. After cooling the reaction solution, 25 ° / was added. Ammonia water 100m / methanol 100ml / ion-exchanged water 200m mixed solution, and stirred for about 1 hour. This solution was allowed to stand overnight at room temperature and then filtered to recover the formed precipitate. Then, this Shen Dian was dried and dissolved in toluene. After filtration to remove insoluble matter, the solution was purified by passing it through a column filled with oxide. Then, this solution was refined by Shen Dian. The resulting Shen Dian was washed with ethanol, and then dried under reduced pressure to obtain a polymer Q Q2g. The obtained polymer is referred to as polymer compound 2. The polystyrene-equivalent number average molecular weight of the door knives & products 2 was 4.5X 103 'and the weight average molecular weight was 7.2x103. The structure of the repeating unit contained in the polymer compound 2 estimated from the feed is shown below. In addition, a polarizing microscope was used to observe the results of the polymer compound 2 under orthogonal polarized light (crOssnicOi), and from the structure (howl), it was confirmed that the polymer molecule 2 was a liquid crystal.

Ο II〇 II

實施例 3 <高分子化合物3之合成>Example 3 < Synthesis of polymer compound 3 >

將實施例1所得單體1與 1之二氟曱烧石夤酸酯〇. 6 3 g 三氟甲烷磺酸酐反應所得單 及N,N-雙(4-溴笨基)-N,N' 314723 61 200403327 又(4正丁基苯基卜丨,‘伸苯基二胺mg及聯二吡啶 〇·八命解在四氫呋喃(脫水)3〇g中後,在氮氣中沸騰, 進行;r、内之氮氣父換。在該溶液中添加雙(丄,5 ·環辛二烯) 錄⑴){Ni(COD)2}0.7g,在室溫下授拌1〇分鐘後升溫,在 60 C下反應3小時。在此,反應係在氮氣環境中進行。Monomer N, N-bis (4-bromobenzyl) -N, N 'obtained by reacting monomer 1 obtained in Example 1 with difluoropyrene tartaric acid ester 0.63 g of trifluoromethanesulfonic anhydride 314723 61 200403327 and (4-n-butylphenylbenzene, mg of biphenylene diamine, and bipyridine 0.8-decomposition in 30 g of tetrahydrofuran (dehydrated), boiling in nitrogen, and carried out; r, The nitrogen inside was changed. To this solution was added bis (丄, 5 · cyclooctadiene) {Ni (COD) 2} 0.7g, and the mixture was heated at room temperature for 10 minutes and heated at 60 ° C. The reaction was continued for 3 hours. Here, the reaction was performed in a nitrogen atmosphere.

將此反應液冷卻後’添加25%氨水1〇rnl/甲醇i〇〇ml/ 離子交換水200ml混合溶液,並攪拌約i小時。將此溶 液在至溫下靜置一仪後過濾以回收所生成的沈澱。接著, 將此沈澱乾燥後,溶解在甲苯中。過濾以去除不溶物後, 將此溶液通過填充有氧化鋁的管柱以精製。接著,將此溶 液注入曱醇中再加以沈澱精製。回收所生成的沈澱,以甲 酉子洗淨後’經過減壓乾燥而得聚合物〇 〇3§。將此所得的 聚合物稱為高分子化合物3。 該高分子化合物3之聚笨乙烯換算之數平均分子量為 5·3χ 1〇3,而重量平均分子量為! 2χ 1〇4。下列表示從飼 裝物所推定的高分子化合物3中所含反複單元之構造。 314723 62 200403327After cooling the reaction solution, a mixed solution of 25% ammonia water 10rnl / methanol 100ml / ion-exchanged water 200ml was added and stirred for about 1 hour. This solution was allowed to stand at room temperature for a while, and then filtered to recover the formed precipitate. Next, this precipitate was dried and then dissolved in toluene. After filtering to remove insoluble matter, this solution was purified by passing it through a column filled with alumina. Next, this solution was poured into methanol and then precipitated and purified. The resulting precipitate was recovered, washed with formazan, and dried under reduced pressure to obtain a polymer 〇3§. This polymer is referred to as polymer compound 3. The polymer compound 3 has a number-average molecular weight in terms of polyethylene of 5 · 3χ 10, and a weight-average molecular weight is! 2χ 104. The structure of the repeating unit contained in the polymer compound 3 estimated from the feed is shown below. 314723 62 200403327

夏_基例4 <高分子化合物4之合成> 將實施例1所得單體丨與三氟平烷磺酸酐反應所得單 體1之三氟甲烷磺酸酯〇.25g及1,4-二溴代-2,5_雙(3 7_二 曱基辛氧基)苯〇.66g以及2,2,_聯二吡啶〇61g溶解在四 氫呋喃(脫水)40g中後,在氮氣中沸騰,進行系内之氮氣 交換。在溶液中添加雙(1,5_環辛二烯)鎳 (〇){Ni(COD)2} l.lg,在室溫下反應24小時。在此,反應 係在氮氣環境中進行。 接著,對此反應液中,添加25%氨水10ml/曱醇30ml/ 離子父換水60ml混合溶液,並搜拌約1小時。將此溶液 在室溫下靜置一夜後過濾以回收所生成的沈澱。接著,將 此沈殿乾燥後,溶解在甲笨中。過濾以去除不溶物。其次, 將該溶液以1當量濃度鹽酸洗淨、分液後,接著,使用約 63 314723 200403327 2.5%之氨水洗淨、分液甲笨層後, 苯層。其次,將所得曱苯溶液注入甲醇 又換水洗淨曱 回收所生成的沈澱,以甲萨斗…μ 加以沈澱精製。 人丄 卞’先/尹便,經過減壓乾释而〜取 合物〇均。將此所得的聚合物稱為高 W而付t 該高分子化合物4之聚笨 口物4。 , . ^ 細換异之數平均分早旦夂 4·7χ 10、而重量平均分子量為7〇χ 1〇 子里為 裝物所推定的高分子化合物4 _ &不從飼 所5畫歿早兀之構造。 C —〇Xia _ Example 4 < Synthesis of Polymer Compound 4 > The monomer 1 obtained in Example 1 was reacted with trifluoropine sulfonic anhydride, trifluoromethanesulfonate 0.25 g and 1, 4- 0.66 g of dibromo-2,5-bis (3 7-difluorenyloctyloxy) benzene and 61 g of 2,2, -bibipyridine were dissolved in 40 g of tetrahydrofuran (anhydrous) and then boiled in nitrogen Perform nitrogen exchange in the system. To the solution was added bis (1,5-cyclooctadiene) nickel (〇) {Ni (COD) 2} 1.1 g, and the mixture was reacted at room temperature for 24 hours. Here, the reaction was performed under a nitrogen atmosphere. Next, to this reaction solution, a mixed solution of 25% ammonia water 10ml / methanol 30ml / ion parent exchange water 60ml was added and mixed for about 1 hour. This solution was allowed to stand at room temperature overnight and then filtered to recover the formed precipitate. Then, this Shen Dian was dried and dissolved in Jiaben. Filter to remove insolubles. Next, the solution was washed with 1 equivalent concentration of hydrochloric acid and separated. Then, the solution was washed with about 63 314723 200403327 2.5% ammonia water, and the methylbenzene layer was separated, and then the benzene layer was separated. Next, the obtained toluene solution was poured into methanol and washed with water. The resulting precipitate was recovered, and the resulting mixture was refined with a nail bucket ... μ. Human 丄 卞 'first / yin bian, after decompression and dry release, ~ all compounds were obtained. The polymer obtained is referred to as a high-w polymer compound 4 of the polymer compound 4. ,. ^ The average number of fine-to-different numbers is 4.07 × 10, and the weight-average molecular weight is 70 × 10. The estimated polymer compound for the contents is 4 _ & not drawn from the feed 5 Early Wu structure. C —〇

/oci〇H 21/ oci〇H 21

^2lC10O Ο——c^ 2lC10O Ο——c

II ο pc 10^21 〇0 例 5 <南分子化合物5之合成> 將實施例1所得單體丨與三氟甲烷磺酸酐反瘫 “ ^传單 體1之三氟甲烷磺酸酯〇.25g及3,7-二溴代-2,8-二矣& T虱基 二苯并噻吩〇.72g及2,2,-聯二吡啶〇.55g溶解在四氣吹。南 (脫水)40g中後,在氮氣中沸騰,進行系内之氮氣交換。 在溶液中添加雙(1,5 -環辛二稀)錄(〇){ N i (C〇D) 2 } 1 · Q α & ’在 室溫下反應24小時。在此,反應係在氮氣環境中進行。 64 314723 200403327 接著’對此反應液中,添加25%氨水ι〇ηι1/甲醇30ml/ 尚隹子父換水6 0 m 1混合溶液,並授拌約1小時。將此溶液 在室溫下靜置一夜後過濾以回收所生成的沈澱。接著,將 此沈澱乾燥後’溶解在甲苯中。過濾以去除不溶物。其次, 將該溶液以1當量濃度鹽酸洗淨、分液後,接著,以約2·5% 之氨水洗淨、分液此溶液後,使用離子交換水洗淨甲苯層。 其次’將所得甲苯溶液注入甲龄 Τ醇中再加以沈澱精製。回收 所生成的沈殿,使用甲醇洗潘仏 , &宁後,經過減壓乾燥,製得聚 合物0.05g。將此所得的聚合物一 吻%為南分子化合物5。 該高分子化合物5之聚! 广 本乙烯換鼻之數平均分子量為 1·0χ 104,而重量平均分子量 里為1·8χ 104。下列表示從飼 裝物所推定的南分子化合物$ % 5所含反複單元之構造。 h21c10oII ο pc 10 ^ 21 〇0 Example 5 < Synthesis of South molecular compound 5 > The monomer obtained in Example 1 丨 was antiparalyzed with trifluoromethanesulfonic anhydride "^ Leaflet 1 of trifluoromethanesulfonate. .25 g and 0.72 g of 3,7-dibromo-2,8-difluorene & Tyldibenzothiophene and 0.55 g of 2,2, -bibipyridine were dissolved in four air blows. South (dehydrated ) After 40 g, boil in nitrogen to perform nitrogen exchange in the system. Add bis (1,5-cyclooctane dilute) to the solution (〇) {N i (C〇D) 2} 1 · Q α & 'The reaction was carried out at room temperature for 24 hours. Here, the reaction was carried out in a nitrogen atmosphere. 64 314723 200403327 Next' To this reaction solution, 25% ammonia water was added 〇ιιιη 1 / methanol 30ml / water was changed by the father-in-law 6 The solution was mixed with 0 m 1 and allowed to stir for about 1 hour. The solution was allowed to stand at room temperature overnight and then filtered to recover the resulting precipitate. Then, the precipitate was dried and 'dissolved in toluene. Filtered to remove insoluble matter Next, the solution was washed with 1% strength hydrochloric acid and separated, and then the solution was washed with about 2.5% ammonia water. After the solution was separated, the toluene layer was washed with ion exchange water. Next, the obtained toluene solution was poured into methyl alcohol and then precipitated and purified. The resulting Shen Dian was recovered, washed with methanol, and then dried under reduced pressure to obtain 0.05 g of a polymer. This obtained One percent of the polymer is south molecular compound 5. The polymer of the polymer compound 5! The number average molecular weight of Hiromoto Ethylene is 1. 0x104, and the weight average molecular weight is 1.8x104. The following indicates from the feed The structure of the repetitive unit contained in the presumed southern molecular compound $% 5. h21c10o

o op 21 Η ον ο chnoo op 21 Η ον ο chno

實施例 6 <高分子化合物6之合成> 氟甲烷磺酸酐反應所得單 將實施例1所得單體丨與 314723 65 200403327 體1之三氟甲烷磺酸酯0.25g及3,7-二溴代-2,8-二辛氧基 二苯并噻吩0.45g及N,N、雙(4」溴苯基)-N,N,-雙(2,6-二曱 基第三丁基苯基)-1,4-伸苯基二胺〇.33g以及2,2,-聯二 吼咬0.5 5g溶解在四氫呋喃(脫水)4〇g中後,在氮氣中沸 騰’進行系内之氮氣交換。在該溶液中添加雙(1,5 _環辛 一烯)鎳(〇){Ni(COD)2}l.〇g,在室溫下反應4〇小時。在 此,反應係在氮氣環境中進行。 接著對此反應液中,添加曱醇$ Om"離子交換水$ 之混合溶液,並攪拌約1小時。將此溶液在室溫下靜置一 夜後過濾以回你辦& + 丄 溶解在甲笨中::沈激。接著,將此沈殿乾燥後, 有氧化紹的營、二除:溶物後,將此溶液通過填充 以沈澱精製。以"月衣。接著,將此溶液注入甲醇中再加 、 回收所生成的沈澱,並使用Γ舻、土、^ 過減壓乾燥而^曰取 乙醇冼淨後,經 侍♦云物〇. 3 5 g。將此所y 分子化合物6。 ,匕所侍的聚合物稱為高 〗該,分子化合物6之聚苯乙稀換〜工 ⑸104,而重量平均分子量為?δχ、「之數平均分子量為 裝物所推定的古 — 。下列表示從飼 〕问分子化合物6所含 里砰夂早兀之構造。 314723 66 200403327Example 6 < Synthesis of high molecular compound 6 > The monomer obtained in Example 1 obtained from the reaction of fluoromethanesulfonic acid anhydride with 314723 65 200403327 0.25g of trifluoromethanesulfonate of body 1 and 3,7-dibromo -2,8-dioctyloxydibenzothiophene 0.45g and N, N, bis (4 "bromophenyl) -N, N, -bis (2,6-difluorenyl tert-butylphenyl) ) 0.33 g of 1,4-phenylenediamine and 0.5 5 g of 2,2, -dioxine were dissolved in 40 g of tetrahydrofuran (dehydrated), and then boiled in nitrogen to perform nitrogen exchange in the system. To this solution, bis (1,5-cyclooctenene) nickel (〇) {Ni (COD) 2} 1.0 g was added and reacted at room temperature for 40 hours. Here, the reaction was performed under a nitrogen atmosphere. Next, a mixed solution of methanol [Om] " ion-exchanged water " was added to the reaction solution, and stirred for about 1 hour. This solution was allowed to stand at room temperature overnight and then filtered to return to your office & + 丄 Dissolved in Jiaben: Shen Shen. Then, after this Shen Dian was dried, there was a solution of oxides and two removals: after dissolving the dissolved matter, the solution was filled by precipitation to refine it. With "Moon Clothes." Next, this solution was poured into methanol and then added to recover the resulting precipitate. After drying under reduced pressure using Γ 舻, soil, ^, and ethanol, the mixture was cleaned, and then passed through a cloud of 0.35 g. Put this y molecule on compound 6. The polymer served by the dagger is called high. The polystyrene of molecular compound 6 is replaced by 工 104, and what is the weight average molecular weight? δχ, "The number average molecular weight is the estimated ancient-. The following indicates from the feed] asked the molecular compound 6 contained in the structure of bang bang early. 314723 66 200403327

h17c8o oc8h17 0-N— H3C CH3 h3c、 τ 1 t-C4H9 實施例7 <吸收光譜、螢光光譜之測定> 高分子化合物1至6,均易於溶解在氯仿中。將其0.2% 氯仿溶液旋轉塗佈在石英板上以製作聚合物之薄膜。分別 使用島津製作所製自記分光光度計UV3 65及日立製作所 製螢光分光光度計8 5 0測定此薄膜之紫外可視吸收光譜及 螢光色譜。 表1中表示高分子化合物1至6之螢光峰值波長及相 對強度。 67 314723 200403327 表1 高分子化合物 1 2 3 4 5 6 ijfe 例 8 重光峰值波長(nm) 438 428 598 437 442 531 螢光強度(a. u.) 6.7 1.2 0.01 2.8 0.7 0.07 、几忏之裂作及評估>h17c8o oc8h17 0-N—H3C CH3 h3c, τ 1 t-C4H9 Example 7 < Measurement of absorption spectrum and fluorescence spectrum > Polymer compounds 1 to 6 are easily dissolved in chloroform. A 0.2% chloroform solution was spin-coated on a quartz plate to make a polymer film. A UV spectrophotometer UV3 65 manufactured by Shimadzu Corporation and a fluorescent spectrophotometer 850 manufactured by Hitachi, Ltd. were used to measure the ultraviolet visible absorption spectrum and fluorescence chromatography of the film. Table 1 shows the fluorescence peak wavelengths and relative intensities of the polymer compounds 1 to 6. 67 314723 200403327 Table 1 Polymer compound 1 2 3 4 5 6 ijfe Example 8 Peak light wavelength (nm) 438 428 598 437 442 531 Fluorescence intensity (au) 6.7 1.2 0.01 2.8 0.7 0.07 ;

在依濺鍍法按l50nm厚度附著有IT〇膜的破璃基板 上’使用聚(乙烯基二經基噻吩)/聚苯乙烯績酸之溶液(拜 耳社拜多隆(Baytron))依旋轉塗佈法按5〇nm之厚度成膜 ^加熱板上在mt:下乾燥5分鐘。其次,使用高分子化 合物1之1.5wt(重量)%甲苯溶液依旋轉塗佈法按、瓜之 厚度成膜。再者’將此在減壓下㈣下乾燥i小時後, 使敦化鐘沈積約4nm後,作為陰極而使妈沈積約、①, 接者使紹沈積約5〇nm以製作高分子咖。沈積時之真* :=:1〇、_。對所得元件上施加電壓:、即 7 Μ刀子化合物1的EL發光。發光起始電谭為約 ::V(伏特)’而發光效率為最大約一A,…= 、.勺lOOcd/m2。丘[峰值波長與高分子化人 儿又.·、、 光蜂值波長略為…而經確認°之缚膜之螢 EL發光。 円刀子化合物1的 [產業上之利用可能性] 光材料使用。因而 。亥而分子LED可適 本發明之高分子化合物可作為發 該高分子化合物可用為高分子led。 314723 68 200403327 合於作為背光的平面狀光源、扁平面顯示器(flat panel display)等之裝置。 69 314723Spin-coating using a solution of poly (vinyl dithiophene) / polystyrene acid (Bayer) on a glass-breaking substrate with an IT0 film adhered to a thickness of 150 nm by a sputtering method (Bayer) The cloth method was formed into a film having a thickness of 50 nm. The hot plate was dried at mt: 5 minutes. Next, a 1.5 wt.% Toluene solution of polymer compound 1 was used to form a film according to the thickness of the melons by a spin coating method. Furthermore, after drying under reduced pressure for 1 hour, Dunhuazhong was deposited to a thickness of about 4 nm, and then the cathode was deposited to a thickness of about ①, and then, to a thickness of about 50 nm to produce a polymer coffee. True during deposition *: =: 1〇, _. A voltage was applied to the obtained element, that is, EL emission of 7 M knife compound 1. The light emission starting voltage is about :: V (volt) 'and the light emitting efficiency is about one A, ... =, 100 sc / m2. Yau [Peak wavelength and high molecular weight ....., light bee value wavelength is slightly ... and it has been confirmed that the fluorescent film EL of the bound film ° emits light. [Industrial Applicability] Light materials for trowel compound 1. Thus. The molecular LED is applicable to the polymer compound of the present invention, and the polymer compound can be used as a polymer LED. 314723 68 200403327 Suitable for devices such as flat light sources and flat panel displays that are backlights. 69 314723

Claims (1)

曱睛專利範圍 洽、 一種高分子化合物,1 i ^ 5 /、拆徵為:含有式(U& 早兀,而及笨乙烯換算 斤不的反複 χ1 #t千均分子$為10、1〇8, X--X2 At1 為 *Αγ2The scope of the patent is a high-molecular compound, 1 i ^ 5 /, the demolition is: containing the formula (U & early Wu, and the repeated conversion of stupid ethylene is not repeated χ1 #t thousand average molecules $ 10, 10. 8, X--X2 At1 is * Αγ2 Ζι (i) [式中,Ar1及Ar2分 或4價之雜環基; 別獨立表示4元之芳 族烴基 及X表示任方為C( = 〇)或(^(RJhR2),而另 一方為 〇、s、c(=〇)、si(=〇)、s〇2、Si(R3)(R4)、n(r5)、 B(P6)、P(R7)或 P( = 〇)(r8); (式中,R1、R2、R3、R4、r5、r6、R7 以及 r8 分 別獨立表示氫原子、齒素原子、烷基、烷氧基、烷硫 基、烧胺基、芳基、芳氧基、芳硫基、芳胺基、芳烧 基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯基、 醯氧基、醯胺基、亞胺基、取代曱矽烷基、取代甲矽 烷氧基、取代甲矽烷硫基、取代甲矽烷胺基、1價之 雜環基、芳烯基、芳乙炔基或氰基) Μ表示式(2)、式(3)或式(4)所表示的基; W 一 (2) [式中,Υ1及Υ2分別獨立表示〇、s、C( = 〇)、= 、 S〇2、C(R9)(R1G)、Si(Rn)(R】2)、N(R13)、B(R14)、P(R15) 或 P( = 0)(Ri6), 314660 70 200403327 (式中,R9、R10、Rn、R12、R13、R14、R15 以及 R】6 分別獨立表示氫原子、鹵素原子、烷基、烷氧基、烷 * 硫基、烷胺基、芳基、芳氧基、芳硫基、芳胺基、芳 烧基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯基、 醯氧基、醯胺基、亞胺基、取代曱矽烷基、取代甲矽 炫氧基、取代甲矽烷硫基、取代甲矽烷胺基、1價之 雜環基、芳烯基、芳基乙炔基或氰基)但,γΐ為 C(R9)(R1())、Si(Rn)(R12)以外時 ’ Υ1 與 Υ2 不會相同] 等 -Y3 = Y4- (3) ’ [式中,Υ3及Υ4分別獨立表示Ν、Β、Ρ、C(R17) 或 Si(R18), (式中,R17及R18分別獨立表示氫原子、鹵素原子、 烷基、烷氧基、烷硫基、烷胺基、芳基、芳氧基、芳 硫基、芳胺基、芳烧基、芳基烧氧基、芳基烧硫基、 ’ 芳基烧胺基、驢基、酸氧基、酸胺基、亞胺基、取代 · 甲矽烷基、取代曱矽烷氧基、取代甲矽烷硫基、取代 # 曱石夕烧胺基、1價之雜環基、芳烯基、芳基乙快基或 氰基)] -γ5- (4) [式中,Υ)表示 0、S、C( = 〇)、s( = 0)、so2、 C(R】9)(R2〇)、Si(R21)(R22)、N(R23)、B(R24)、P(R25)或 P( = 0)(R26) ’ (式中,R】9、R20、R2】、R22、R23、r24、r25 以及 R20分別獨立表示氫原子、鹵素原子、烧基、烧氧基、 314660 71 200403327 烷硫基、院胺基、芳基、芳氧基、芳硫基、芳胺基、 芳烧基、芳基烷氧基、芳基烷硫基、芳基烷胺基、醯 基、醯氧基、醯胺基、亞胺基、取代曱矽烷基、取代 甲石夕少元氧基、取代甲石夕烧硫基、取代曱石夕烧胺基、1 價之雜環基、芳烯基、芳基乙炔基或氰基)] Z,表示-CR36 = CR37-或-Ce C-,R36 及 R37 分別獨立Z i (i) [wherein Ar1 and Ar2 are heterocyclic groups of 4 or 4 valences; do not independently represent a 4-membered aromatic hydrocarbon group and X represents that either party is C (= 〇) or (^ (RJhR2), and the other 〇, s, c (= 〇), si (= 〇), s〇2, Si (R3) (R4), n (r5), B (P6), P (R7), or P (= 〇) ( r8); (wherein R1, R2, R3, R4, r5, r6, R7, and r8 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an amine group, an aryl group, Aryloxy, arylthio, arylamino, arylthio, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, fluorenyl, fluorenyl, imino, substituted曱 silyl, substituted silyloxy, substituted silylthio, substituted silylamino, monovalent heterocyclic group, arylalkenyl, arylethynyl, or cyano) M represents formula (2), formula (3 ) Or a group represented by formula (4); W a (2) [wherein Υ1 and Υ2 each independently represent 0, s, C (= 〇), =, S〇2, C (R9) (R1G), Si (Rn) (R) 2), N (R13), B (R14), P (R15) or P (= 0) (Ri6), 314660 70 200403327 (where R9, R10, Rn, R12, R13 , R14 R15 and R] 6 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkyl * thio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamine group, an aryl group, and an aromatic group. Alkylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, fluorenyl, fluorenyl, imino, substituted fluorsilyl, substituted silyloxy, substituted silylthio, Substituted silylamino, monovalent heterocyclic group, arylalkenyl, arylethynyl or cyano), but γΐ is other than C (R9) (R1 ()), Si (Rn) (R12) 'Υ1 Not the same as Υ2] etc. -Y3 = Y4- (3) '[where Υ3 and Υ4 independently represent N, B, P, C (R17) or Si (R18), (where R17 and R18 are respectively Independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an alkylamino group, an aryl group, an aryloxy group, an arylthio group, an arylamine group, an aryl group, an aryl group, an aryl group, or an aryl group Burning thio, 'aryl burning amine, donkey, acidoxy, acid amine, imine, substituted silyl, substituted fluorin silyloxy, substituted silylthio, substituted # 曱 石 夕 烧Amino group, monovalent heterocyclic group Arylalkenyl, arylethenyl, or cyano)] -γ5- (4) [wherein Υ) represents 0, S, C (= 0), s (= 0), so 2, C (R) 9 ) (R2〇), Si (R21) (R22), N (R23), B (R24), P (R25), or P (= 0) (R26) '(where R is 9, R20, R2) , R22, R23, r24, r25 and R20 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkyl group, 314660 71 200403327 an alkylthio group, an amino group, an aryl group, an aryloxy group, an arylthio group, an arylamine Aryl, aralkyl, arylalkoxy, arylalkylthio, arylalkylamino, fluorenyl, fluorenyloxy, fluorenylamino, imino, substituted fluorinated silyl, substituted methacrylate (Oxyl, substituted methanthoxythio, substituted vermiculite amine, monovalent heterocyclic group, arylalkenyl, arylethynyl, or cyano)] Z, represents -CR36 = CR37- or -Ce C-, R36 and R37 are independent 表不風原子、烷基、芳基、丨價之雜環基或氰基_,d表 示0或1 ]。 2·如申請專利範圍第i項之高分子化合物,其 中,Μ係式(2)所示者。 ^ τ 口月寸π靶圍第 ,η甘初,具中,在式α ,及Ar2係鍵結在Ar,之芳環碳之相鄰接位 :ΐ:Γ:*Α1·2之芳環碳之相鄰接位置,… 鍵二^tArI之芳環碳之相鄰接位置,Υ2及^係 鍵、0在Ar-之芳環碳之相鄰接位置。 4. :=:範圍第〗項、第2項、 南勿子化合物,其中’在式⑴中’ a 1頁之 5. 如申請專利範圍 r係苯環者。 合物,其令,在式⑴中,Ym弟4項之高分子化 ",專利範圍第2:、第項x!(c——0)者。 高分子化合物,其中’在式⑴中及項χ?Γ項之 而γ及X1為〇(氧原子)者。 為(〇〇), 7.如辛請專利範圍帛1項 合物,其令,在式 員中任一項之高分子化 Ο所示的反複單元之合計為全反複 314660 72 200403327 單元之1 0莫耳%以上者。 8 ·如申請專利範圍第1項至第7項中任一項之高分子化 合物,其中,係具有液晶性者。 9.如申請專利範圍第1項至第7項中任一項之高分子化 合物,其中,在固體狀態下具有螢光者。It represents a wind atom, an alkyl group, an aryl group, a valence heterocyclic group or a cyano group, and d represents 0 or 1]. 2. The polymer compound according to item i in the patent application range, wherein M is represented by formula (2). ^ τ Orbital π target circumference, η Ganchu, in the formula α, and Ar2 is bonded to the adjacent ring of aromatic ring carbon, ΐ: Γ: * A1 · 2 aromatic ring Adjacent positions of carbon, ... Adjacent position of aromatic ring carbon of bond 2 ^ tArI, Υ2 and ^ series bonds, 0 are adjacent positions of aromatic ring carbon of Ar-. 4.: =: Scope item 〖2 」, Nanbezi compound, in which‘ in formula ’’ a Page 1 of 5. If the scope of patent application is r-benzene ring. Compound, its order, in the formula ,, the polymerization of the 4th item of Ym brother ", the scope of the patent 2: and the item x! (C-0). A polymer compound in which 'is in the formula 及 and the term χ? Γ is the term, and γ and X1 are 0 (oxygen atom). It is (〇〇). 7. If the patent scope of the patent application is 1 item, it makes the total number of repeating units shown in the macromolecularization 0 of any one of the formulas be the total repeating 314660 72 200403327 units. Above 0 mole%. 8. The polymer compound according to any one of claims 1 to 7 of the scope of application for a patent, wherein the polymer compound is liquid crystalline. 9. The polymer compound according to any one of claims 1 to 7 of the scope of application for a patent, wherein the polymer compound has fluorescence in a solid state. 1 〇· —種高分子電子元件,其特徵為:含有申請專利範圍 第1項至第9項之高分子化合物。 11. 一種高分子發光元件,其特徵為:在由陽極及陰極而 成的電極間具有發光層,而該發光層含有申請專利範 圍第1項至第9項中任一項之高分子化合物。 12· —種平面狀光源,其特徵為:含有申請專利範圍第11 項之高分子發光元件。 1 3 · —種段顯示裝置,其特徵為:含有申請專利範圍第1 1 項之高分子發光元件。1 〇 · A polymer electronic component, which is characterized in that it contains a polymer compound in the scope of claims 1 to 9 of the patent application. 11. A polymer light-emitting device, characterized in that it has a light-emitting layer between electrodes formed by an anode and a cathode, and the light-emitting layer contains a polymer compound according to any one of claims 1 to 9 of the patent application range. 12 · —A planar light source, which is characterized in that it contains a polymer light emitting element according to item 11 of the scope of patent application. 1 3 · —Segment display device, which is characterized in that it contains a polymer light-emitting element according to item 11 of the scope of patent application. 14· 一種點矩陣顯示裝置,其特徵為:含有申請專利範圍 第11項之高分子發光元件。 1 5 · —種液晶顯示裝置,其特徵為:以申請專利範圍第1 1 項之高分子發光元件作為背光。 314660 200403327 * 柒、指定代表圖:本案無代表圖 (一) 本案指定代表圖為:第( )圖。 (二) 本代表圖之元件代表符號簡單說明: ^ φ 捌、本案若有化學式時,請揭示最能顯示發明特徵的化學式: X1-X214. A dot matrix display device, which is characterized in that it contains a polymer light-emitting element according to item 11 of the scope of patent application. 1 5 · A liquid crystal display device, characterized in that a polymer light emitting element according to item 11 of the patent application scope is used as a backlight. 314660 200403327 * 指定, designated representative map: no representative map in this case (I) The designated representative map in this case is: (). (II) Brief description of the representative symbols of the components in this representative figure: ^ φ 捌, if there is a chemical formula in this case, please disclose the chemical formula that can best show the characteristics of the invention: X1-X2 4 3147234 314723
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