1286253 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種液晶顯示器，特別是指一種改變陣 列基板上薄膜電晶體結構以形成凸出部之液晶顯示器。 【先前技術】 制。傳統型液晶顯示器在陣列基板與彩色濾、光片基板對組 ‘程中，由於使用政佈式球狀間隔物製程，喷灑分佈密度 極難做有效控制，會造成球狀間隔物密度不均而影響液晶 顯示器模組平坦性，進而影響整體晝質表現。 此外，由於過去形成液晶胞間隙（cell卵幻的間隔物 材料主要疋使用樹醋系的散佈式球狀材料，但因球狀材料 有損害配向膜、導致顯示不良，及漏光致使對比低落的問 題，彩色濾光片業界遂朝開發可取代球狀材料的新型間隔 物材料，即在曝光工程形成柱狀樣式的間隔物方向發展， 可使厚度更一致與增加開口率。 由於使用柱狀間隔物技術會有較均勻的液晶胞間隙， 相對於液晶顯示器的特性部分，則會有較佳的透光率與較 高的對比，因而在液晶顯示技術中，柱狀間隔物（Spacer on Color Filter，SOC)漸漸取代球狀間隔物。但柱狀間 隔物技術也有新的問題：製程上，當彩色濾光片基板與陣 列基板對位組立時，會進行磨合的動作，此時會有較大的 摩擦阻力產生，進而增加製程時間，甚至刮傷基板，導致 顯示特性降低；且使用柱狀間隔物技術的液晶顯示器，在 承受一壓力下有可能會由於彩色濾光片基板上柱狀間隔物 1286253 的塑性變形，導致液晶胞間隙無法再回復至原本的高度， 進而造成液晶顯不面板顯不不良，再者’用柱狀間隔物的 液晶顯示器，在低溫環境下會因柱狀間隔物的收縮量小於 液晶材料的收縮量，而使液晶材料有低溫發泡的現象。 針對該等問題，一種作出不同高度的柱狀間隔物，以 達到有高低液晶胞間隙效果的技術便被發展出來。而欲製 作不同高度之柱狀間隔物，可藉由不同色層之厚度（不同 顏色之濾光片設以不同高度）達成之，但該等色層厚度並 不易控制；也可利用在彩色濾光片製程中，於曝光過程中 控制其曝光量來造成不同的色層高度，但其製程繁瑣，需 利用到多道光罩製程，不但費時、也增加了製造成本。 【發明内容】 本發明的主要目的在於提供一種液晶顯示器，藉由簡 單的光罩設計，於陣列基板上形成不同高度的平台，來造 成間隔物與陣列基板間之不同的預留空間，達到與先前技 術同樣的不同間隔物高度結果，並同時能解決先前技術之 問題與缺失。 鑒於前述習知技術的問題，本發明提供一種液晶顯示 器，包括一薄膜電晶體陣列基板、一彩色濾光片基板及夾 於薄膜電晶體陣列基板與彩色濾光片基板間之液晶層，本 發明係在彩色濾光片基板上設有複數第一間隔物及複數第 二間隔物且在薄膜電晶體陣列基板上設有分別對應該些第 一間隔物及該些第二間隔物的複數第一凸出部及複數第二 1286253 凸出部，此薄膜電晶體陣列基板與彩色濾光片基板相對放 置其間形成液晶層並填充液晶，其中該些第一間隔物與該 些第一凸出部相接觸，而該些第二間隔物與該些第二凸出 部相接觸並與該薄膜電晶體陣列基板具有一餘裕空間，此 空間存在係防止在低溫下因液晶量收縮而導致發泡的現象 產生，另一優點為在陣列基板上凸出部的存在可使間隔物 不至於因外在壓力而產生形變的問題。 為使對本發明的目的、構造特徵及其功能有進一步的 了解，茲配合圖示詳細說明如下： 【實施方式】 本發明主要是利用間隔物的高均勻性，在間隔物相對 應的陣列基板上做出與間隔物面積、形狀、高度不同的凸 出部，而達到與先前技術之不同高度間隔物效果，其中凸 出部之形成係於陣列基板在半導體層或源極與汲極層成膜 時，在對應光罩中對應陣列基板上閘極線之結構處上開以 一矩形孔，使在閘極線上的閘極絕緣層與接觸孔之間多出 一半導體層或源極與汲極層，其中該矩形孔之大小使所形 成之半導體層或源極與汲極層足以承載該間隔物，其優點 為不會增加製程中的光罩數目及時間與成本，另可改善液 晶低溫發泡及間隔物受壓問題，此凸出部之形成請參照下 列圖示及詳細說明如下。 首先，請參照第1圖，顯示一般習知液晶顯示器之陣 列基板製程之薄膜電晶體結構之剖面圖，其通常是透過習 1286253 知光罩製程技術（如：曝光、顯影、_••等技術）形成 一匕括有·於基底100上作為閘極線一部份之閘極110 ( 同度hi- 〇· 4〇//m)、於基底1〇〇與閘極1丨〇上之閘極絕 緣層120 (高度h2= 0.40//m)、於閘極絕緣層12〇上之 半導體層130 (而度h3= 0.18//m)、於半導體層130上 之源極與汲極層14〇 (高度h4= 0.40//m)、及覆蓋整個 基底100並位於閘極11〇、閑極絕緣層12〇、源極與汲極 層140、半導體層13〇上方之絕緣層15〇 (高度h5= 〇· 3〇 。該等層膜11〇, 120, 130, 140, 150在依該光罩製程 技術形成時皆使用一對應光罩，且所形成之總高度H1為 1.68//Π1。為方便表示，此結構以下係以薄膜電晶體結構 A稱之。 接著，請參照第2圖與第3圖，為本發明所提供之第 一具體實施例，包含有薄膜電晶體陣列基板21、彩色濾 光片基板10、與夾於兩基板-10、21間之的液晶層40，並 在薄膜電晶體陣列基板21之基底200上，依習知光罩製 程依序形成閘極210，閘極絕緣層220、半導體層230、 第一源極與汲極層240、絕緣層250、以及第二源極與汲 極層260，其中該等層膜210, 220, 230, 240, 250, 260在依 該光罩製程技術形成時皆使用一對應光罩，且該閘極絕緣 層220上的第二源極與汲極層260與絕緣層250構成凸出 部B。此實施例乃利用薄膜電晶體陣列基板21在形成第 一源極與沒極層240時’在對應光罩中對應薄膜電晶體陣 列基板上閘極線之結構處上開以一矩形孔，使不同畫素的 1286253 閘極線上閘極絕緣層220與絕緣層250之間多出與第一源 極與汲極層240相同高度h4 (0.4//m)的第二源極與汲 極層260，即凸出部B，其中該矩形孔之大小使該凸出部 β足以承載柱狀間隔物30，且該突出部B之總高度H2為 1 · 5 0 // m ’與薄膜電晶體結構a相較少了 〇 · 18 // m。所以 §柱狀間隔物3 0之彩色漉光片基板1 〇與薄膜電晶體陣列 基板21組立時，柱狀間隔物30與薄膜電晶體結構a相接 觸而凸出部B與柱狀間隔物30具有一高度差Dl= 0.18// m ° 如第4圖與第5圖所示，其為本發明所提供之第二具 體實施例，其包含薄膜電晶體陣列基板22、彩色濾光片 基板10、與夾於兩基板1〇、22間的液晶層40，並在於薄 膜電晶體陣列基板22之基底300上，依習知光罩製程依 序形成閘極310，閘極絕緣層320、第一半導體層330、 源極與汲極層340、絕緣層350、以及第二半導體層360 ’其中該等層膜310, 320, 330, 340, 350, 360在依該光罩製 程形成時皆使用一對應光罩，且在該閘極絕緣層32〇上的 第二半導體層360與絕緣層350構成一凸出部C ;此實施 例之凸出部C是利用於形成第一半導體層33〇時，在對應 光罩中對應薄膜電晶體陣列基板上閘極線之結構處上開以 一矩形孔’使在不同畫素的閘極線上多出和第一半導體層 330相同高度（h3 = 〇· 18//m)的第二半導體層360，且此 構造之總南度為H3 = 1· 28//m，與薄膜電晶體結構A相 車父少了 0· 40 // m ’其中該矩形孔之大小使該凸出部◦足以 1286253 承載該柱狀間隔物30。同理，當具有柱狀間隔物3〇之彩 色濾光片基板10與陣列基板22組立時，柱狀間隔物3〇 與凸出部C及薄臈電晶體結構a間的空間具有一高度差 D2 = 0· 40 // m 〇 另如第6圖所示，為本發明所提供之第三實施例，其 結合了第一實施例與第二實施例之設計，該第二半導體層 與第二源極與汲極層同時存在。本實施例是在薄膜電晶體 陣列基板23上依習知光罩製程形成第一半導體層、第一 源極與汲極層時，分別在第一半導體層和第一源極與汲極 層之對應光罩上對應薄膜電晶體陣列基板之閘極線的結構 處開以一矩开>孔，使在閘極線上的閘極絕緣層與絕緣層之 間形成多出高度為h3(0.18/zn〇的第二半導體層與高^為 h4(0.4/zm)的第二源極與汲極層，即分別為圖中第一凸出 部D與第二凸出部E，其中第一凸出部D之各層結構如第 5圖所示，總高度為H3(1.28//m)，而第二凸出部£之 各層結構則如第3圖所示，總高度為H2(15〇#m)，且 該矩形孔之大小使該第一及第二凸出部D，E足以承載柱狀 間隔物30的大小。因此第一凸出部D與第二凸出部e的 高度差為0.22# m，所以當彩色濾光片基板1〇與薄膜電 晶體陣列基板23組立時，柱狀間隔物30與第一凸出部D 及第二凸出部E間之空間有一高度差D3 = 〇22_。另 ，如同第一實施例與第二實施例中，第一凸出部D與第二 凸出部E與薄膜電晶體結構A相較，分別少τ n 1〇/、 7 "J u. i8//m 與 〇· 40//m，因此柱狀間隔物30與第一凸出 11 1286253 空間和柱狀間隔物3G與薄膜電晶體結構A間的 1相較各有-高度差〇.18_與〇.4〇"m。 =實施例，於薄膜電晶體陣列基板23之製程中， 與沒極層及半導體層的光罩上，開出矩形孔，以 條狀之凸出部，乃為與柱狀間隔物相匹配；開孔亦 ::广狀’以配合其他種間隔物(如，球狀間隔物)。1286253 IX. Description of the Invention: [Technical Field] The present invention relates to a liquid crystal display, and more particularly to a liquid crystal display in which a thin film transistor structure on an array substrate is changed to form a projection. [Prior Art] System. In the conventional liquid crystal display (in the array substrate and the color filter, the light substrate substrate pair process), due to the use of the political cloth ball spacer process, the spray distribution density is extremely difficult to effectively control, resulting in uneven density of the spherical spacers. It affects the flatness of the liquid crystal display module, which in turn affects the overall performance of the enamel. In addition, due to the formation of liquid crystal cell gaps in the past (the cell illusion spacer material mainly uses the vinegar-based diffused spherical material, but the spherical material damages the alignment film, resulting in poor display, and light leakage causes the contrast to be low. The color filter industry has developed a new spacer material that can replace the spherical material, that is, the direction of the spacer formed by the exposure process, which can make the thickness more uniform and increase the aperture ratio. Due to the use of column spacers The technology will have a relatively uniform liquid crystal cell gap, and compared with the characteristic portion of the liquid crystal display, there will be a better light transmittance and a higher contrast. Therefore, in the liquid crystal display technology, a column spacer (Spacer on Color Filter, SOC) gradually replaces the spherical spacers. However, the column spacer technology also has a new problem: in the process, when the color filter substrate and the array substrate are aligned, the running-in action will be performed, and there will be a large Frictional resistance is generated, which in turn increases process time and even scratches the substrate, resulting in a decrease in display characteristics; and a liquid crystal display using column spacer technology, Under the pressure, there may be plastic deformation of the column spacer 1826253 on the color filter substrate, so that the liquid crystal cell gap can no longer return to the original height, and the liquid crystal display panel is not bad, and the column is used again. The liquid crystal display of the spacers has a phenomenon that the liquid crystal material has a low-temperature foaming phenomenon because the amount of shrinkage of the columnar spacers is smaller than the shrinkage amount of the liquid crystal material in a low-temperature environment. For these problems, a columnar shape of different heights is used. Spacers have been developed to achieve high and low liquid crystal cell gap effects. Columnar spacers of different heights can be achieved by the thickness of different color layers (filters of different colors are set at different heights). However, the thickness of the color layers is not easy to control; it can also be used in the color filter process to control the exposure amount during the exposure process to cause different color layer heights, but the process is cumbersome, and multiple masks are needed. The process is not only time-consuming but also increases the manufacturing cost. SUMMARY OF THE INVENTION The main object of the present invention is to provide a liquid crystal display, which is simplified by The single reticle design forms different height platforms on the array substrate to create different reserved spaces between the spacers and the array substrate, achieving the same different spacer height results as the prior art, and simultaneously solving the prior art. In view of the problems of the prior art, the present invention provides a liquid crystal display comprising a thin film transistor array substrate, a color filter substrate, and a liquid crystal sandwiched between the thin film transistor array substrate and the color filter substrate. The layer is provided with a plurality of first spacers and a plurality of second spacers on the color filter substrate, and the first spacers and the second spacers are respectively disposed on the thin film transistor array substrate. a plurality of first protrusions and a plurality of second 1286253 protrusions, wherein the thin film transistor array substrate is disposed opposite to the color filter substrate to form a liquid crystal layer and fill the liquid crystal, wherein the first spacers and the first portions The protrusions are in contact with each other, and the second spacers are in contact with the second protrusions and have a margin with the thin film transistor array substrate , The presence of the space-based due to the liquid crystal at a low temperature to prevent the amount of shrinkage caused foaming phenomenon is generated, a further advantage is that the presence of the projecting portion on the array substrate may cause problems due to external pressure spacers will not generate deformation. In order to further understand the object, structural features and functions of the present invention, the following detailed description is provided with the accompanying drawings: [Embodiment] The present invention mainly utilizes the high uniformity of spacers on the array substrate corresponding to the spacers. A protrusion different from the area, shape, and height of the spacer is formed to achieve a height spacer effect different from that of the prior art, wherein the formation of the protrusion is performed on the array substrate to form a film on the semiconductor layer or the source and the drain layer A rectangular hole is formed in the corresponding structure of the gate line on the corresponding array substrate in the corresponding mask, so that a semiconductor layer or a source and a drain are formed between the gate insulating layer and the contact hole on the gate line. a layer, wherein the rectangular hole is sized such that the formed semiconductor layer or source and the drain layer are sufficient to carry the spacer, which has the advantages of not increasing the number of masks and time and cost in the process, and improving the low temperature of the liquid crystal For the problem of pressure on the bubble and the spacer, please refer to the following diagram and detailed description for the formation of the protrusion. First, please refer to FIG. 1 , which shows a cross-sectional view of a thin film transistor structure of an array substrate process of a conventional liquid crystal display, which is generally performed by a technique of a light-receiving mask process (eg, exposure, development, _••, etc.). Forming a gate 110 (same degree hi- 〇·4〇//m) as a part of the gate line on the substrate 100, and a gate on the substrate 1〇〇 and the gate 1丨〇 a very insulating layer 120 (height = 0.40 / / m), a semiconductor layer 130 on the gate insulating layer 12 (and a degree h3 = 0.18 / / m), a source and a drain layer 14 on the semiconductor layer 130 〇 (height h4=0.40//m), and an insulating layer 15 覆盖 (height) covering the entire substrate 100 and located at the gate 11 〇, the dummy insulating layer 12 〇, the source and drain layers 140, and the semiconductor layer 13 〇 H5 = 〇·3〇. The layers 11〇, 120, 130, 140, 150 are all formed using a corresponding mask when formed according to the reticle process technology, and the total height H1 formed is 1.68//Π1. For convenience of presentation, this structure is referred to below as a thin film transistor structure A. Next, please refer to FIGS. 2 and 3 for the first embodiment of the present invention. The thin film transistor array substrate 21, the color filter substrate 10, and the liquid crystal layer 40 sandwiched between the two substrates -10, 21, and on the substrate 200 of the thin film transistor array substrate 21, according to the conventional mask process Forming a gate 210, a gate insulating layer 220, a semiconductor layer 230, a first source and drain layer 240, an insulating layer 250, and a second source and drain layer 260, wherein the film 210, 220 , 230, 240, 250, 260 are all formed by a mask according to the mask manufacturing process, and the second source and the drain layer 260 and the insulating layer 250 on the gate insulating layer 220 form a protruding portion. B. This embodiment utilizes the thin film transistor array substrate 21 to form a rectangular hole in the structure of the gate line on the corresponding thin film transistor array substrate in the corresponding photomask when the first source and the gate layer 240 are formed. The second source and the drain of the gate electrode insulating layer 220 and the insulating layer 250 of the different pixel of the same pixel have the same height h4 (0.4//m) as the first source and the drain layer 240. a layer 260, that is, a projection B, wherein the rectangular hole is sized such that the projection β is sufficient to carry the column spacer 3 0, and the total height H2 of the protrusion B is 1 · 5 0 // m ' is less than the film transistor structure a 〇 · 18 // m. Therefore, the color spacer of the column spacer 30 When the substrate 1 is assembled with the thin film transistor array substrate 21, the column spacer 30 is in contact with the thin film transistor structure a, and the protrusion portion B and the column spacer 30 have a height difference Dl = 0.18 / / m ° as in the first 4 and 5 are a second embodiment of the present invention, comprising a thin film transistor array substrate 22, a color filter substrate 10, and a liquid crystal sandwiched between the two substrates 1 and 22 The layer 40 is disposed on the substrate 300 of the thin film transistor array substrate 22, and the gate 310, the gate insulating layer 320, the first semiconductor layer 330, the source and drain layers 340, and the insulating layer 350 are sequentially formed according to the conventional mask process. And the second semiconductor layer 360' wherein the layers of the film 310, 320, 330, 340, 350, 360 are each formed using a corresponding mask when the mask process is formed, and on the gate insulating layer 32 The second semiconductor layer 360 and the insulating layer 350 form a protrusion C; the protrusion C of this embodiment is used to form the first semiconductor When the layer is 33 ,, a rectangular hole is formed in the structure corresponding to the gate line on the corresponding thin film transistor array substrate in the corresponding mask so that the gate electrode lines of different pixels have the same height as the first semiconductor layer 330 ( H3 = 〇 · 18 / / m) of the second semiconductor layer 360, and the total southness of this configuration is H3 = 1 · 28 / / m, and the film transistor structure A phase of the father is less than 0 · 40 / m 'The rectangular hole is sized such that the projection is sufficient for 1286253 to carry the column spacer 30. Similarly, when the color filter substrate 10 having the column spacers 3 is assembled with the array substrate 22, the space between the column spacers 3 and the protrusions C and the thin transistor structure a has a height difference. D2 = 0·40 // m 〇 as shown in Fig. 6, which is a third embodiment provided by the present invention, which combines the design of the first embodiment and the second embodiment, the second semiconductor layer and the The two sources and the drain layer exist simultaneously. In this embodiment, when the first semiconductor layer, the first source and the drain layer are formed on the thin film transistor array substrate 23 by the conventional mask process, the corresponding light is respectively in the first semiconductor layer and the first source and the drain layer. The structure of the gate line corresponding to the thin film transistor array substrate is opened with a hole opening, so that an extra height h3 is formed between the gate insulating layer and the insulating layer on the gate line (0.18/zn〇). a second semiconductor layer and a second source and a drain layer having a height h4 (0.4/zm), that is, a first protrusion D and a second protrusion E in the figure, respectively, wherein the first protrusion The structure of each layer of D is as shown in Fig. 5, the total height is H3 (1.28//m), and the structure of each layer of the second protrusion is as shown in Fig. 3, and the total height is H2 (15〇#m). And the size of the rectangular hole is such that the first and second protrusions D, E are sufficient to carry the size of the column spacer 30. Therefore, the height difference between the first protrusion D and the second protrusion e is 0.22# m, so when the color filter substrate 1A and the thin film transistor array substrate 23 are assembled, the space between the columnar spacer 30 and the first protruding portion D and the second protruding portion E has a height D3 = 〇22_. In addition, as in the first embodiment and the second embodiment, the first protrusion D and the second protrusion E are smaller than the thin film transistor structure A, respectively, τ n 1〇/, 7 "J u. i8//m and 〇·40//m, so the column spacer 30 and the first protrusion 11 1286253 space and the column spacer 3G and the thin film transistor structure A have a - Height difference 18.18_和〇.4〇"m. = Embodiment, in the process of the thin film transistor array substrate 23, a rectangular hole is formed on the photomask with the electrodeless layer and the semiconductor layer, The convex portion is matched with the column spacer; the opening is also: wide to match other kinds of spacers (for example, spherical spacers).
:出部之尺寸亦不加以限制’在上述實施例中，凸出部 之見度比間隔物略大4〜8/ζιη。 上述實施例中’形成於薄膜電晶體陣列基板23上之 平台面積略A於柱㈣隔物；而本發明之另—構想，則是 於陣列基板上形成面積較小或形狀純狀間隔物相異的 台。詳細說明於下。 請參照第7圖與第8圖，顯示本發明之第四具 例。和第二具體實施例不同的是，本實施例透過在光罩上 開出面積小於柱狀間隔物之矩形孔，所形成的凸出部G之 面積會小於柱狀間隔物30。當彩色濾光片基板1〇與薄膜 電晶體陣列基板25組立時，柱狀間隔物3〇會受一壓力， 由於薄膜電晶體陣列基板25上有高度H5 (〇· 18“ m)平 口頂住的緣故，如第9圖所示，可看出柱狀間隔物與 薄膜電晶體陣列基板25間還有高度H6 (0.03//m)的餘 裕度，而此餘裕度的存在，可讓柱狀間隔物3〇與平台間 還有高度H6 (0· 03//m)的高度可供壓縮，以避免柱狀間 隔物30因受力產生無法回復的狀況，進而造成顯示不良 。另一方面’此餘裕度.可防止液晶顯示器在低溫下因液晶 12 1286253 量收縮而導致發泡的現象產生。 另如第ίο圖所示，為本發明之第五具體實施例。和 前述具體實施例不同的是，本實施例在光罩上開出矩形孔 時，矩形孔之長度需大於柱狀間隔物的大小，因此所形成 的凸出部Η之長度會大於柱狀間隔物30，藉以產生與前 述構想一樣的效果。 綜而言之，利用本發明之構想，即僅藉由改變光罩的 設計，我們可製作出不同高度的平台，如凸出部Β、凸出 部C、第一凸出部D、第二凸出部Ε，或是不同面積或形 狀的平台，如凸出部G、凸出部Η，來承載間隔物，使間 隔物與陣列基板間形成不同的預留空間，而達到與不同高 度柱狀間隔物有相同的效果，來避免過大應力造成柱狀間 隔物產生塑性變形、或溫度變化使液晶層產生真空氣泡， 而導致液晶顯示器之顯示產生瑕疵等問題；並且不會增加 製程中的光罩數目，不會增加製程的時間，也不會增加製 造成本。 雖然本發明之較佳實施例揭露如上所述，然其並非用 以限定本發明，任何熟習相關技藝者，在不脫離本發明之 精神和範圍内，當可作些許之更動與潤飾，因此本發明之 專利保護範圍須視本說明書所附之申請專利範圍所界定者 為準。 【圖式簡單說明】 第1圖為一般液晶顯示器之薄膜電晶體結構之剖面圖； 第2圖為本發明之液晶顯示器之第一具體實施例之組合示 ⑧ 13 意圖； 第3圖為本發明之液曰曰，示 面圖； °。弟一具體實施例之結構剖 第4圖為本發明之液晶顯 意圖； 第一具體實施例之組合示 第5圖為本發明之液晶顯示 面圖； 之弟二具體實施例之結構剖 第6圖為本發明之液 意圖； 第7圖為本發明之液晶顯示哭 咅圖· 弟四具體實施例之組合示 第8圖為本發明之液晶顯示哭 ,,L ^ 之弟四具體實施例之組立後 的上方俯視圖； 1夂 第9圖為本發明之液晶顯 其不為之苐四具體實施例之受到外 _ 晶顯示器之第三具體實施例之組合示 力塵縮後之示意圖；及 第10圖為本發明之液晶顯示器之第五具體實施例之組立 後的上方俯視圖。 彩色濾光片基板 陣列基板 間隔物 液晶層 基底 【主要元件符號說明】 10 2卜 22 、 23 、 25 30 40 1〇〇 、 200 、 300 1286253The size of the outlet portion is also not limited. In the above embodiment, the visibility of the projection is slightly larger than the spacer by 4 to 8/ζι. In the above embodiment, the terrace surface formed on the thin film transistor array substrate 23 is slightly larger than the pillar (four) spacer; and the other aspect of the present invention is to form a spacer having a small area or a pure shape on the array substrate. Different stations. Details are given below. Referring to Figures 7 and 8, a fourth example of the present invention is shown. Different from the second embodiment, in the present embodiment, by forming a rectangular hole having a smaller area than the column spacer on the photomask, the area of the projection G formed is smaller than that of the column spacer 30. When the color filter substrate 1 is assembled with the thin film transistor array substrate 25, the column spacer 3 is subjected to a pressure, and the film is placed on the film transistor array substrate 25 with a height H5 (〇·18" m). For the reason, as shown in Fig. 9, it can be seen that there is a margin of height H6 (0.03//m) between the column spacer and the thin film transistor array substrate 25, and the margin can exist in the columnar shape. The height of the spacer 3〇 and the height H6 (0· 03//m) between the platforms can be compressed to prevent the column spacer 30 from being unable to recover due to the force, thereby causing poor display. This margin can prevent the phenomenon that the liquid crystal display causes foaming due to the shrinkage of the liquid crystal 12 1286253 at a low temperature. Further, as shown in Fig. 5, it is a fifth embodiment of the present invention, which is different from the foregoing specific embodiment. In this embodiment, when a rectangular hole is formed in the reticle, the length of the rectangular hole needs to be larger than the size of the column spacer, so that the length of the protruding portion 形成 formed is larger than that of the column spacer 30, thereby generating the foregoing Imagine the same effect. In summary, use this The idea of the invention is that by merely changing the design of the reticle, we can create platforms of different heights, such as a bulge, a bulge C, a first bulge D, a second bulge, or Platforms of different areas or shapes, such as the protrusions G and the protrusions, carry the spacers, so that different spaces are formed between the spacers and the array substrate, and the same effect as the column spacers of different heights is achieved. To avoid excessive stress causing plastic deformation of the column spacers, or temperature changes to cause vacuum bubbles in the liquid crystal layer, which causes problems such as defects in the display of the liquid crystal display; and does not increase the number of masks in the process, and does not increase the process. The present invention is not limited to the present invention, and it is not intended to limit the scope of the present invention. The invention can be modified and retouched. Therefore, the scope of patent protection of the present invention is subject to the definition of the patent application scope attached to the specification. A cross-sectional view of a thin film transistor structure of a liquid crystal display; FIG. 2 is a combination of the first embodiment of the liquid crystal display of the present invention; FIG. 3 is a liquid helium of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a schematic view of a liquid crystal according to the present invention; a combination of the first embodiment is shown in FIG. 5 is a liquid crystal display surface view of the present invention; 6 is a liquid intent of the present invention; FIG. 7 is a combination of a liquid crystal display and a fourth embodiment of the present invention; FIG. 8 is a liquid crystal display crying of the present invention, and a specific embodiment of L ^ FIG. 9 is a schematic view of the liquid crystal display of the present invention, which is not the fourth embodiment of the present invention, which is subjected to the combination of the third embodiment of the external crystal display; Figure 10 is a top plan view of the assembled fifth embodiment of the liquid crystal display of the present invention. Color filter substrate Array substrate Spacer Liquid crystal layer Substrate [Main component symbol description] 10 2 Bu 22 , 23 , 25 30 40 1〇〇 , 200 , 300 1286253
110 、 210 、 310 120 、 220 、 320 130 、 230 140 、 340 150 、 250 、 350 240 260 330 360 A110, 210, 310 120, 220, 320 130, 230 140, 340 150, 250, 350 240 260 330 360 A
B、C、G > Η DB, C, G > Η D
D卜 D2 、 D3 E h卜 h2、h3、h4、h5 HI 、 H2 、 H3 H5、H6 閘極 閘極絕緣層 半導體層 源極與汲極層 絕緣層 第一源極與汲極層 第二源極與汲極層 第一半導體層 第二半導體層 薄膜電晶體結構 凸出部 第一凸出部 高度差 第二凸出部 高度 總高度 高度 15D Bu D2 , D3 E h b h2 , h3 , h4 , h5 HI , H2 , H3 H5 , H6 gate gate insulating layer semiconductor layer source and drain layer insulating layer first source and drain layer second source Polar and drain layer first semiconductor layer second semiconductor layer thin film transistor structure convex portion first convex portion height difference second convex portion height total height height 15