12854透亨 twfd〇c/g 九、發明說明： 【發明所屬之技術領域】 θ本發明是有關於一種電感元件及其製造方法，且特別 是有關於-種金屬_絕緣物金屬的變壓器m ^ 【先前技術】 由於’變壓器具備高效率、無磁漏、低雜訊點， 因此已成為目前射頻積體電路中不可或缺的元件之一 ”。 外，變壓器的應用範圍可以說是相當地歧 於微波與RF電路上。 ^應用 變壓器主要是由—個磁芯(core)與兩個線圈，主要線 圈(Pnmarycoil)與二次線圈（sec〇ndaryc〇ii)，組合而成。一 般而吕’變壓器是以磁芯為媒介，而將兩個線圈繞製於其 交流電流通至主要線圈時，會在磁芯内產生與 此*^的束’利用此磁束，在二次線圈產生電壓， 此卷£的大小與所繞的圈數成正比。 :型:變在同一平面上製作，因此其所;占的面積過 辦加。所設計出的射頻電路面積過大，導致成本 (space)H ^共平面型之變壓1㈣個線11之間的間距 (space)較大，因此會造成攀懕 的問題，進而景舰件陶係數不高 下在現今對於元件尺寸“求越來越小的趨勢 :此:=器的製程f結構已無法滿足設計上的需求。 〇 °决上述問題’以有效節省面積是目前製程所 5 128542^100°^ 關心的問題。 【發明内容】 有鑑於此’本刺的目龍是在提供 -金屬的變壓哭之制拌士、也Αμ ^ 丈蜀、、、巴、緣取 &… °°衣&方法，硓夠有效節省晶片面積，且巧 細短線圈之間的間距，巧提高赛合係、數。… 屙哭本ΪΓ的ί—目的是提供—種金屬_絕緣物_金屬的變 件效能與可靠度。1距，“麵合係數以及元 為達本發明之上述目的，本發明提出 ^屬的懸器之製造方法，其咖__成—全/= 、、彖物-金屬電容器與變壓哭、>屬、、、巴 有至少-介雷居夕一直4 衣造方法為，先提供已形成 全屬二/板。然後，於基板上軸圖案化之 器的第-全屬绫Γ:: 層，且同時形成變璧 、、、圈接f，形成一絕緣層，以覆蓋基板、 —金屬_ °之後’於絕緣層上形成圖案 鐵ίΐ屬:緣物-金屬電容器的第二金屬層’且同時形成 交壓益的第二金屬線圈。 一依ft發明的較佳實施例所述，上述之第-金屬線圈 一弟一孟屬線圈的圖案相同。在另一實施例中，上述之 一金屬線圈與第二金屬線圈的圖案不同。 方#依照本發明的較佳實施例所述，上述之第一金屬線圈 ，第二金屬線圈的線圈數相同。在另一實施例中，上述之 第一金屬線圈與第二金屬線圈的線圈數不同。 依R?、本發明的較佳實施例所述，上述之第一金屬層與 12 8 54M^twfd〇c/g 第一金屬線圈的材質相同 或銅。 依照本發明的較佳實 第二金屬線圈的材質相同 或銅。 ，其例如是氮化鈦、氮化鈕、鋁 施例所述，上述之第二金屬層與 例如疋氮化鈦、氮化组、|呂 依4發明的較佳實施例 例如是氧切·氮切氧切錢切層的材1 括第-‘屬出-種金屬-絕緣物-金屬的變壓器’其自 圈係圍繞出金:!圈3絕緣層。第-編 ί 11或，而罘二金屬線圈配置於第一金屬 " ，且第二金屬線圈係圍繞出一第二區域，其中第 =與第一區域係相對應部分重疊；: 金屬電容“ 輯層與金屬-絕緣物- 盥篦依ί ί發明的較佳實施例所述，上述之第-金屬線圈 ，、弟一孟屬線圈的圖案相同。在另一實施例中，上述之 一金屬線圈與第二金屬線圈的圖案不同。 斤依照本發明的較佳實施例所述，上述之第—金屬線圈 ，弟一金屬線圈的線圈數相同。在另一實施例中，上述之 第一金屬線圈與第二金屬線圈的線圈數不同。 ，照本發明的較佳實施例所述，上述之第一金屬線圈 的材貝例如是氮化鈦、氮化钽、铭或銅。 依ft?、本發明的較佳實施例所述，上述之第二金屬線圈 的材貝例如是氣化欽、氮化组、銘或銅。 lZ0D^E8/twfdoc/^ 依知、本發明的較佳每 例如是氧化石夕遗化石夕_氧==，’上述之絕緣層 的材質 φ综上所述，本發明用或-=：：，石夕。 電容器的製程，來形成c屬-絕緣物·金屬 本發明之變壓器所佔 、、，表物-孟屬的變壓器。因此， 可較為縮小，如此曰曰面積較小’且其二線圈之間距 能。另外，本發壓器之輕合係數以及元件效 方法亦可與形成金屬=^^^變厂聖器及其製造 行，因此可節省製程成本。i _电谷态的製程同時進 為讓本發明之上述和 易懂，下文特舉較佳ϋ，目的、⑽和優點能更明顯 明如下。 只&彳’亚配合所附圖式，作詳細說 【實施方式】 較二變壓:二=大以錢^ 明提出-齡^元件魏。因此’本發 解決屬的變壓11及其製造方法，以 ^至圖lc為依照本發明—實施例崎示之金屬_ 心彖物-金屬的變壓器之製造方法的剖面示意圖。 了先，請參照圖1A，提供一基底100，此基底100上 γ夕形成有介電層102。介電層102的材質例如是氧化矽、 鼠化矽、低介電常數材料等一般所熟知的介電材料，其形 成^法例如先以化學氣相沈積法(CVD)，沈積一層介電層 (未、9不)於基底10()上，然後再以化學機械研磨法(CMP) 1285427twfdoc/g 進行平坦化步驟，以形成之。此處熟知此技藝者當知介電 層102可為多層的結構，並且在基底100上與介電層1〇2 中可形成有多個元件與金屬内連線。 接著，請繼續參照圖1A，於基板100上同時形成圖 案化之第一金屬層104與第一金屬線圈106。第一金屬層 104與第一金屬線圈106的材質可例如是氮化鈦(TiN)或其 他合適之金屬，其形成方法例如是氣相沈積法、濺鍍法或 其他合適之方法。其中，第一金屬線圈106之上視圖如圖12854 Tengheng twfd〇c/g IX. Description of the invention: [Technical field of the invention] θ The present invention relates to an inductor element and a method of manufacturing the same, and in particular to a transformer of a metal-insulator metal m ^ [Prior Art] Since the transformer has high efficiency, no magnetic leakage, and low noise, it has become one of the indispensable components in the current RF integrated circuit. In addition, the application range of the transformer can be said to be quite different. On microwave and RF circuits. ^Application transformer is mainly composed of a core and two coils, the main coil (Pnmarycoil) and the secondary coil (sec〇ndaryc〇ii). The transformer is based on a magnetic core, and when two coils are wound around its alternating current to the main coil, a beam with this ^^ is generated in the core. This magnetic flux is used to generate a voltage in the secondary coil. The size of £ is proportional to the number of turns it is wound. : Type: It is made on the same plane, so it takes up; the area occupied is too large. The designed RF circuit area is too large, resulting in cost (space) H ^ total Planar change 1 (four) lines 11 between the space (space) is larger, so it will cause climbing problems, and then the view of the ship's ceramic coefficient is not high in today's component size "seeking smaller and smaller trend: this: = The process f structure has been unable to meet the design requirements. 〇 ° Determine the above problem ‘To effectively save the area is the current concern of the process 5 128542^100°^. [Summary of the Invention] In view of this, the thorn of the thorn is provided in the metal-made pressure-shrinking system, Αμ ^ 蜀 蜀, 、, 巴, 缘取 &... ° ° clothing & method, 硓It is effective enough to save the wafer area, and the spacing between the coils is fine and small, and the system and number are improved. ... The purpose of crying is to provide the performance and reliability of a metal_insulator_metal. 1 distance, "face factor and element" are the above-mentioned objects of the present invention, and the present invention proposes a method for manufacturing a suspension of the genus, which is a coffee-metal capacitor and a pressure-reducing cry. > genus,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, a layer, and at the same time forming a bismuth, and a ring, forming an insulating layer to cover the substrate, after the metal _ °, forming a pattern on the insulating layer: a second metal layer of the edge-metal capacitor And at the same time forming a second metal coil of the cross-pressure. According to a preferred embodiment of the ft invention, the pattern of the first metal coil is the same as that of the other one. In another embodiment, one of the above The metal coil is different from the pattern of the second metal coil. According to a preferred embodiment of the present invention, the first metal coil and the second metal coil have the same number of coils. In another embodiment, the foregoing The number of coils of one metal coil and the second metal coil is different. According to R?, this hair In a preferred embodiment of the present invention, the first metal layer is made of the same material or copper as the first metal coil of 12 8 54 M ^ twfd 〇 c / g. The second metal coil of the preferred embodiment of the present invention has the same material or Copper, which is, for example, a titanium nitride, a nitride button, or an aluminum embodiment, wherein the second metal layer and the preferred embodiment of the invention such as titanium niobium nitride, nitrided group, and | The cut-cut nitrogen cut-cut material 1 includes a '-------metal-insulator-metal transformer' whose self-loop is surrounded by gold:! Ring 3 insulation. Chapter-Edition 11 or The second metal coil is disposed on the first metal " and the second metal coil surrounds a second region, wherein the first portion and the first region are partially overlapped; the metal capacitor "layer and metal-insulator" According to a preferred embodiment of the invention, the pattern of the first metal coil and the second coil is the same. In another embodiment, the one of the metal coils is different from the pattern of the second metal coil. According to a preferred embodiment of the present invention, the number of coils of the first metal coil and the metal coil is the same. In another embodiment, the first metal coil and the second metal coil have different numbers of coils. According to a preferred embodiment of the present invention, the material of the first metal coil is, for example, titanium nitride, tantalum nitride, or copper. According to a preferred embodiment of the present invention, the material of the second metal coil is, for example, a gasification, a nitrided group, a quartz or a copper. lZ0D^E8/twfdoc/^ According to the knowledge, the preferred embodiment of the present invention is, for example, an oxidized stone fossilized stone _ oxygen ==, 'the above-mentioned insulating layer material φ in summary, the present invention uses or -=:: , Shi Xi. The process of the capacitor is to form a c-generator/metal. The transformer of the present invention is a transformer of the present invention. Therefore, it can be made smaller, so that the area is smaller, and the distance between the two coils is higher. In addition, the light-weighting factor of the pressure generator and the component effect method can also be used to form a metal=^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ The process of the i-electrical state is the same as that of the present invention. The following is a better description, and the purpose, (10) and advantages can be more clearly as follows. Only & 彳' sub-combination with the drawing, for details; [Embodiment] More than two pressure: two = big money ^ Ming proposed - age ^ component Wei. Therefore, the transformer 11 of the present invention and the method of manufacturing the same are shown in cross section to Fig. 1c, which is a cross-sectional view showing a method of manufacturing a metal-heart-metal-metal transformer according to the present invention. First, referring to FIG. 1A, a substrate 100 is provided on which a dielectric layer 102 is formed on the gamma. The material of the dielectric layer 102 is, for example, a commonly known dielectric material such as yttrium oxide, lanthanum ytterbium, low dielectric constant material, etc., which is formed by, for example, first depositing a dielectric layer by chemical vapor deposition (CVD). (No, 9) is applied to the substrate 10 (), and then a planarization step is performed by chemical mechanical polishing (CMP) 1285427 twfdoc/g to form it. It is well known to those skilled in the art that the dielectric layer 102 can be a multi-layered structure, and a plurality of components and metal interconnects can be formed in the dielectric layer 1 and the substrate 100. Next, referring to FIG. 1A, the patterned first metal layer 104 and the first metal coil 106 are simultaneously formed on the substrate 100. The material of the first metal layer 104 and the first metal coil 106 may be, for example, titanium nitride (TiN) or other suitable metal, and the formation method thereof is, for example, a vapor deposition method, a sputtering method, or other suitable methods. Wherein, the top view of the first metal coil 106 is as shown
4所示，其圖案例如是呈同心方形螺旋狀。第一金屬層ι〇4 例如是金屬·絕緣物-金屬電容器（metal_insulat〇r_metal capacitor ’ MIM capacitor)的下電極，亦即是在進行金 1ΛΛ .人/“、、闻113，形成一絕緣層108,以覆苔Α 100、第一金屬層104邀 从设盍基‘ 如是與金屬'絕緣物二/一金屬線圈106。絕緣層108. 例如是氧化矽-氮化二&電容器的絕緣物相同，其材質 (NO)或其他適合之石/氧化矽(0Ν0)、或氮化矽_氧化> 隨後，請參照圖：。 化之第二金屬層11〇 ^ ，於絕緣層108上同時形成圖〗 110以及第二金屬綠第二金屬、線目112。第二金❸ 合適之金屬，其形戍=112的材質可例如是氮化鈦或其+ 他合適之方法。其中，士例如是氣相沈積法、濺鍍法或$ 所示，其圖案例如二第二金屬線圈Π2之上視圖如圖/ 王同心方形螺旋狀。第二金屬層Ui I28542fwfdoc/g • 例如是金屬-絕緣物-金屬電容器的上電極，亦即是在進行 金屬_絕緣物-金屬電容器的製作過程中，可以在相同製程 中形成第一金屬線圈112。第一金屬線圈1〇6、第二金屬線 圈112以及形成於—者間的絕緣層1⑽係可構成一金屬_ 絕緣物-金屬 _ 壓器（metaHnsulat〇r_metal transf〇rmer， MIM transformer)。 …特別要說_是，本發明之金屬·絕緣物_金屬的變壓 态係利用一般形成金屬-絕緣物_金屬電容器的製程，所製 鲁 作的。因此，本發明之變壓器的二線圈之間距可較為縮小， 如此可提尚變壓器之耦合(coupling)係數以及元件效能。另 -方面，本發明之變壓器亦可有效節省晶片面積，進 節省製程成本。 此外，本發明並不限於上述之製程步驟。卩下係 多個實施例以更佳詳細說明本發明。 牛 圖2A至圖2C為依照本發明另一實施例所綠示之 -絕緣物-金屬的變壓器之製造方法的剖面示意圖。 首先’請參照圖2A，提供-基底2〇〇，此基底2 至少形成有介電層202。介電層2〇2的材質例如是氧 I化石夕、低介電常數材料等—般所熟知的介電材料，、 成方法例如先以化學氣相沈積法，沈積一 二彤 於基底⑽上，然後再以化學機械研磨^進;^= “，以形成之。此處熟知此技藝者當知介電層2犯 ^ 層的結構，並且在基底200上與介電層2〇2 ; 2多 個元件與金屬内連線。 ^战有多 12854S 甲twfd〇c/g 之後，於基板200上之介電層2Q2中ρη 士 之第-金屬層204以及第—金屬線圈2〇6。第：=匕 以及第-金屬線圈206的材質例如 二曰204 f，；形成方法例如是以-般所熟知之金屬鑲St 丨電層搬中形成圖案化的開口（未圖示），再將全严 開口中，以形成之。 埏寺方法填入As shown in Fig. 4, the pattern is, for example, a concentric square spiral shape. The first metal layer ι4 is, for example, a lower electrode of a metal_insulat〇r_metal capacitor 'MIM capacitor', that is, a gold electrode is formed. A person/", a light 113, an insulating layer 108 is formed. To cover the moss 100, the first metal layer 104 is invited to be provided with a ruthenium base as in the case of a metal 'insulator/two metal coil 106. The insulating layer 108. For example, the insulation of the yttria-nitriding two & capacitor , the material (NO) or other suitable stone / yttrium oxide (0 Ν 0), or tantalum nitride _ oxidation > gt; Subsequently, please refer to the figure: The second metal layer 11 〇 ^, simultaneously formed on the insulating layer 108 Figure 110 and the second metal green second metal, line 112. The second metal is a suitable metal, and the material of the shape =112 can be, for example, titanium nitride or a method suitable for him. Vapor deposition, sputtering or as shown in Fig. 2, for example, the view of the second metal coil Π2 is as shown in the figure / Wang concentric square spiral. The second metal layer Ui I28542fwfdoc / g • For example metal-insulators - The upper electrode of the metal capacitor, that is, the metal _insulator-gold During the fabrication of the capacitor, the first metal coil 112 may be formed in the same process. The first metal coil 1〇6, the second metal coil 112, and the insulating layer 1(10) formed therebetween may constitute a metal_insulator- Metal-pressure device (metaHnsulat〇r_metal transf〇rmer, MIM transformer). In particular, the metal-insulator-metal transformation state of the present invention utilizes a process for generally forming a metal-insulator-metal capacitor. Therefore, the distance between the two coils of the transformer of the present invention can be reduced, so that the coupling coefficient of the transformer and the component performance can be improved. In addition, the transformer of the present invention can also effectively save the wafer area. Further, the present invention is not limited to the above-described process steps. The present invention is described in more detail with reference to a plurality of embodiments. Figure 2A to Figure 2C show green in accordance with another embodiment of the present invention. A schematic cross-sectional view of a method of manufacturing an insulator-metal transformer. First, please refer to FIG. 2A, providing a substrate 2, which is formed with at least dielectric 202. The material of the dielectric layer 2〇2 is, for example, a dielectric material well known as an oxy-I fossil, a low dielectric constant material, or the like, and the method is, for example, first deposited by chemical vapor deposition on the substrate. (10) Upper, and then chemical mechanical grinding ^ ^ ", to form. It is well known to those skilled in the art that the structure of the dielectric layer 2 is known to be the same as that of the dielectric layer 2 and the dielectric layer 2 2; After the warfare 12854S A twfd〇c/g, the first metal layer 204 and the first metal coil 2〇6 of the dielectric layer 2Q2 on the substrate 200. The first:=匕 and the material of the first metal coil 206 are, for example, two 204 f, and the forming method is, for example, a patterning opening (not shown) in a metal-stamped electric layer which is generally known, and then In the strict opening, to form. Fill in the temple method
之後，請參照圖2B，形成一絕緣層2〇8，以舜 、第一金屬層204與第-金屬線圈206。絕緣^ 如是與金屬'絕緣物金屬電容器的絕緣物相同，“ 氮化—、或氮化，氧化㈣= 化之金】2C ’於絕緣層2〇8上同時形成圖案 210以^屬第二金屬線圈212。第二金屬層 Γ八ί Γ 2的材質可例如是銅或其他合適Thereafter, referring to Fig. 2B, an insulating layer 2〇8 is formed to 舜, the first metal layer 204 and the first metal coil 206. Insulation ^ is the same as the insulation of the metal 'insulator metal capacitor, "nitriding - or nitriding, oxidizing (4) = gold] 2C ' simultaneously forming a pattern 210 on the insulating layer 2 〇 8 to be a second metal The coil 212. The material of the second metal layer Γ8ί Γ 2 can be, for example, copper or other suitable
J二1成方法例如是氣相沈積法、_法或其他合 適之方法。弟—金屬線圈綱、第二金屬線圈212以及形 成，二者_絕緣層遍係可構成—金屬絕緣物·金屬的 變壓器。 圖3Α至圖3C為依照本發明又一實施例所繪示之金屬 -絕緣物-金屬的變壓器之製造方法的剖面示意圖。 首先，％翏照圖3Α，提供一基底3〇〇，此基底3〇〇上 f少形成有介電層3〇2。介電層302的材質例如是氧化矽、 氮化矽、低介電常數材料等一般所熟知的介電材料，其形 12854烫▽twfdoc/g 成方法例如先以化學氣相沈積法，沈積一層介電層（未緣示) 於基底300上，然後再以化學機械研磨法進行平坦化步 驟，以形成之。此處熟知此技藝者當知介電層3〇2可為多 層的結構，並且在基底300上與介電層302中可形成有多 個元件與金屬内連線。The J two-ten method is, for example, a vapor deposition method, a method, or other suitable method. The younger-metal coil and the second metal coil 212 are formed, and the two insulating layers can constitute a metal insulator/metal transformer. 3A to 3C are schematic cross-sectional views showing a method of manufacturing a metal-insulator-metal transformer according to still another embodiment of the present invention. First, as shown in Fig. 3, a substrate 3 is provided, and a dielectric layer 3〇2 is formed on the substrate 3〇〇f. The material of the dielectric layer 302 is, for example, a commonly known dielectric material such as yttrium oxide, tantalum nitride, or a low dielectric constant material. The shape of the dielectric layer twfdoc/g is, for example, first deposited by chemical vapor deposition. A dielectric layer (not shown) is applied to the substrate 300 and then planarized by chemical mechanical polishing to form. It is well known to those skilled in the art that the dielectric layer 3〇2 can be a multi-layer structure, and a plurality of elements and metal interconnects can be formed in the substrate 300 and the dielectric layer 302.
之後，於基板300上之部分介電層302表面上同時形 成圖案化之第一金屬層304以及第一金屬線圈3〇6。第一 金屬層304以及第一金屬線圈3〇6的材質例如是氮化钽 (TaN)或其他合適之金屬，其形成方法例如是先於介電層 302中形成圖案化的開σ(未圖示），再將金屬材料以例如^ 賤鑛法或化學氣相沈積法等方法填人開口之側壁，以形成 之後’請參照圖3B，形成一絕緣層3〇8，去 m一严金r 304與第一金屬線圈3〇6。絕緣層:例 緣物·金屬電容器的絕緣物相Thereafter, the patterned first metal layer 304 and the first metal coil 3〇6 are simultaneously formed on the surface of the portion of the dielectric layer 302 on the substrate 300. The material of the first metal layer 304 and the first metal coil 3〇6 is, for example, tantalum nitride (TaN) or other suitable metal, and is formed by, for example, forming a patterned opening σ before the dielectric layer 302 (not shown). Show), and then fill the metal material with the sidewall of the opening by a method such as 贱 贱 or chemical vapor deposition, etc., after forming 'Please refer to FIG. 3B, forming an insulating layer 3 〇 8, and going to m a strict gold r 304 and the first metal coil 3〇6. Insulation: Examples of insulators and insulators of metal capacitors
合之材料。 夕-乳化矽、或氮化矽-氧化矽或其他適 化之J者全C 3C’於絕緣層308上同時形成圖案 合適之金屬，甘線圈312的材質可例如是氮化鈕或其他 他合適之方法If方法例如是氣相沈積法、濺鑛法或其 及形成於二者間線圈306、第二金屬線圈312以 屬的變屙哭。勺、'、巴緣層3⑽係可構成一金屬-絕緣物-金 12 1285歹 twf.d〇c/g 在上述實施例中，金屬（第一金屬層、第二金屬層、第 一金屬線圈與第二金屬線圈）的材質並不限定於上述所提 及的材質，其還可例如是紹或其他合適之金屬。 接下來，說明利用本發明之方法所形成之金屬-絕緣物 -金屬的變壓器之結構。 請參照圖6,其為依照本發明實施例所繪示之金屬-絕緣物-金屬的變壓器之示意圖。金屬-絕緣物-金屬的變壓 器600係由第一金屬線圈610、第二金屬線圈620以及絕 緣層630所組成。其中，第一金屬線圈610係圍繞出一第 一區域611。第二金屬線圈620配置於第一金屬線圈610 上方，其係圍繞出一第二區域621，而第二區域621與第 一區域611係相對應部分重疊。另外，絕緣層630配置於 第一金屬線圈610與第二金屬線圈620之間，特別是絕緣 層630與金屬-絕緣物-金屬電容器的絕緣物相同。 在上述實施例中，本發明係以變壓器的第一金屬線圈 與第二金屬線圈之圖案呈同心方形螺旋狀為例，且第一金 屬線圈與第二金屬線圈的線圈數為2做說明，然本發明並 不限定於此。本發明之第一金屬線圈與第二金屬線圈的圖 案可例如是同心圓形螺旋狀(如圖7所示）、同心八角形螺 旋狀(如圖8所示）、同心多邊形螺旋狀(如圖9所示）或其他 適合之圖案。 在一實施例中，第一金屬線圈與第二金屬線圈的圖案 可相同，也可不同。在另一實施例中，第一金屬線圈與第 二金屬線圈的線圈數可相同，也可不同。 13 I28542^wfdoc/g 綜上所述，本發明係利用一般製作金屬-絕緣物-金屬 電容器的製程，來形成金屬-絕緣物-金屬的變壓器。因此， 本發明之變壓器的二線圈之間距可較為縮小，如此可提高 變壓器之耦合係數以及元件效能。而且，本發明之變壓器 所佔之晶片面積較小，可節省製程成本。 另一方面，本發明之金屬-絕緣物-金屬的變壓器及其 製造方法亦可與形成金屬-絕緣物-金屬電容器的製程同時 進行，因此可節省製程成本。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1A至圖1C為依照本發明一實施例所繪示之金屬-絕緣物-金屬的變壓器之製造方法的剖面示意圖。 圖2A至圖2C為依照本發明另一實施例所繪示之金屬 -絕緣物-金屬的變壓器之製造方法的剖面示意圖。 圖3A至圖3C為依照本發明又一實施例所繪示之金屬 -絕緣物-金屬的變壓器之製造方法的剖面示意圖。 圖4、圖5、圖7、圖8與圖9為依照本發明實施例所 繪示之金屬-絕緣物·金屬的變壓器之第一金屬線圈與第二 金屬線圈的上視圖。 圖6為依照本發明實施例所繪示之金屬-絕緣物-金屬 的變壓器之示意圖。 14 ί2854¾ 甲wf.d〇c/g 【主要元件符號說明】 100、200、300 :基底 102、202、302 :介電層 104、204、304 :第一金屬層 106、206、306、610 :第一金屬線圈 108、208、308、630 :絕緣層 110、210、310 :第二金屬層 112、212、312、620 :第二金屬線圈 600 :金屬-絕緣物-金屬的變壓器 611 ·•第一區域 621 ··第二區域 15Combined materials. The eve-emulsified ruthenium, or tantalum nitride-ruthenium oxide or other suitable J 3 C'C' on the insulating layer 308 simultaneously forms a suitable pattern of metal, and the material of the gyro coil 312 can be, for example, a nitride button or other suitable The method If method is, for example, a vapor deposition method, a sputtering method, or a coil 306 formed therebetween, and the second metal coil 312 is smashed by the genus. The spoon, ', the edge layer 3 (10) can constitute a metal-insulator - gold 12 1285 歹 twf.d〇c / g In the above embodiment, the metal (the first metal layer, the second metal layer, the first metal coil The material of the second metal coil) is not limited to the above-mentioned materials, and may be, for example, a suitable metal or other suitable metal. Next, the structure of a metal-insulator-metal transformer formed by the method of the present invention will be described. Please refer to FIG. 6 , which is a schematic diagram of a metal-insulator-metal transformer according to an embodiment of the invention. The metal-insulator-metal transformer 600 is composed of a first metal coil 610, a second metal coil 620, and an insulating layer 630. The first metal coil 610 surrounds a first region 611. The second metal coil 620 is disposed above the first metal coil 610 to surround a second region 621, and the second region 621 and the first region 611 are partially overlapped. Further, the insulating layer 630 is disposed between the first metal coil 610 and the second metal coil 620, and in particular, the insulating layer 630 is the same as the insulator of the metal-insulator-metal capacitor. In the above embodiment, the invention is exemplified by a concentric square spiral pattern of the first metal coil and the second metal coil of the transformer, and the number of coils of the first metal coil and the second metal coil is 2, The present invention is not limited to this. The pattern of the first metal coil and the second metal coil of the present invention may be, for example, a concentric circular spiral (as shown in FIG. 7), a concentric octagonal spiral (as shown in FIG. 8), and a concentric polygonal spiral (as shown in FIG. 9) or other suitable pattern. In an embodiment, the patterns of the first metal coil and the second metal coil may be the same or different. In another embodiment, the number of coils of the first metal coil and the second metal coil may be the same or different. 13 I28542^wfdoc/g In summary, the present invention utilizes a general process for fabricating a metal-insulator-metal capacitor to form a metal-insulator-metal transformer. Therefore, the distance between the two coils of the transformer of the present invention can be reduced, which can improve the coupling coefficient of the transformer and the performance of the component. Moreover, the transformer of the present invention occupies a small wafer area, which saves process costs. On the other hand, the metal-insulator-metal transformer of the present invention and the method of manufacturing the same can be carried out simultaneously with the process of forming the metal-insulator-metal capacitor, thereby saving process cost. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1C are schematic cross-sectional views showing a method of manufacturing a metal-insulator-metal transformer according to an embodiment of the invention. 2A-2C are schematic cross-sectional views showing a method of manufacturing a metal-insulator-metal transformer according to another embodiment of the present invention. 3A-3C are schematic cross-sectional views showing a method of manufacturing a metal-insulator-metal transformer according to still another embodiment of the present invention. 4, 5, 7, 8, and 9 are top views of a first metal coil and a second metal coil of a metal-insulator/metal transformer according to an embodiment of the invention. Figure 6 is a schematic illustration of a metal-insulator-metal transformer in accordance with an embodiment of the present invention. 14 2828543⁄4 Awf.d〇c/g [Main component symbol description] 100, 200, 300: Substrate 102, 202, 302: Dielectric layer 104, 204, 304: First metal layer 106, 206, 306, 610: First metal coils 108, 208, 308, 630: insulating layers 110, 210, 310: second metal layers 112, 212, 312, 620: second metal coil 600: metal-insulator-metal transformer 611 ·• One area 621 ··the second area 15