1284583 九、發明說明： 【發明所屬之技術領域】 本發明是關於半導體晶圓研磨技術之化學機械研磨（CMp) 裝置的自動回饋方法，特別是該CMP裝置中之操作彖數 (recipe)自動回饋的方法。 少 【先前技術】 ^圖1所示為習知技術之CMP裝置之基本架構，其作用過程 是將晶圓12以研磨頭（head) 20利用加壓裝置24壓在研磨 墊(pad)l〇上，再以研磨液18由研磨液提供装置16提供至晶 圓12與研磨塾1〇之間，當晶圓12進行研磨加工時，同時以 研，液18中所包含的超微磨粒（直徑在1〇〇奈米以下）拋光 材料利用研磨頭2〇和研磨平台％的旋轉的方式對晶圓a 之凸部進行選擇性的研磨動作。 為了保持研磨墊的平整性，必需使用研磨墊修整5| 14 來J整研㈣1Q，修整Μ半如伽製作，因為進行:曰曰圓 研磨同時也會磨損研磨墊10和研磨頭20的緩衝墊22，造成 和研磨頭20的表面產生不平整的情況，降低晶圓 12 ^的研磨效率，所以必需_硬度較高（如鑽石）的研 f墊L整器14將研磨塾1〇表面的不平整修整，以利晶圓12 t研磨塾10的接觸面能維持良好的狀態，讓研磨液18可以均 勻的分布在晶圓和研磨墊之間，維持研磨的良好效率。一 敕哭f研磨的過程中，無論研磨頭20、研磨墊丨〇和研磨墊修 j 14皆會磨損，因此這些零件都屬雜性零件，也都有^ 磨夺，長時，會造成晶圓表面某些部分的& 圓ί? L下降’如第3圖所示，在不同的生命週期下在晶 因，2内外部分所產生的研磨速率效果也會產生明顯的不 9 f形中所顯示，當消耗性零件生命週期尚屬年輕的曲線 ϋ ’曲線的落差還不算太大，但到生命聊較老化的曲 5 -1284583 線4(PAD 18小時/Condition 18小時/Head 18小時）時，曰圓 12邊緣㈣磨速率呈現大幅的下降趨勢，此― : ^晶圓_磨效果會_耗性零件生命週_增加;越 差0 因應這樣的變化，在CMP裝置的操作參數上，可以適當 整施加在晶圓12區域上的壓力，讓晶圓12的各部分的研& 率值產生變化，依此可以調整晶圓12邊緣的研磨速率，因此 ，要一個機制來判斷不同消耗性零件生命週期時，要如何調整 操作參數來保持研磨速率，以維持良好的研磨品質。1284583 IX. Description of the Invention: [Technical Field] The present invention relates to an automatic feedback method of a chemical mechanical polishing (CMp) device for semiconductor wafer polishing technology, in particular, an automatic feedback of operation of a recipe in the CMP device Methods. Less [Prior Art] Fig. 1 shows the basic structure of a conventional CMP apparatus, which is a process in which a wafer 12 is pressed against a polishing pad by a head 20 using a pressurizing device 24. Then, the polishing liquid 18 is supplied from the polishing liquid supply device 16 to the wafer 12 and the polishing crucible 1 . When the wafer 12 is subjected to the grinding process, the ultrafine abrasive grains contained in the liquid 18 are simultaneously studied ( The polishing material has a diameter of 1 〇〇 nanometer or less. The polishing material selectively polishes the convex portion of the wafer a by the rotation of the polishing head 2 〇 and the polishing table %. In order to maintain the flatness of the polishing pad, it is necessary to use a polishing pad to trim 5|14 to J. (4) 1Q, trimming and semi-finishing, because it is performed: the round grinding also wears the pad of the polishing pad 10 and the polishing head 20. 22, causing unevenness on the surface of the polishing head 20, reducing the polishing efficiency of the wafer 12 ^, so it is necessary to _ a higher hardness (such as diamond) of the grinding pad L device 14 will grind the surface of the 塾 1 不Smoothing and trimming, so that the contact surface of the wafer 12 t polishing crucible 10 can maintain a good state, so that the polishing liquid 18 can be evenly distributed between the wafer and the polishing pad to maintain good grinding efficiency. During the process of grinding and crying, no matter the grinding head 20, the polishing pad and the polishing pad repair, the parts will be worn. Therefore, these parts are all miscellaneous parts, and there are also ^ grinding, which will cause crystals for a long time. The & circle ί? L drop in some parts of the circular surface, as shown in Figure 3, the effect of the grinding rate produced in the inner and outer parts of the crystal in different life cycles will also produce a distinct 9 f shape. It shows that when the life cycle of consumable parts is still young, the curve's drop is not too big, but to the life of the aging song 5 -1284583 line 4 (PAD 18 hours / Condition 18 hours / Head 18 hours When the edge of the 12 round (four) grinding rate shows a sharp downward trend, this - : ^ wafer _ grinding effect will be _ wear parts life cycle _ increase; the worse 0 due to such changes, on the operating parameters of the CMP device The pressure applied to the area of the wafer 12 can be properly adjusted to change the research &litude values of the portions of the wafer 12, thereby adjusting the polishing rate of the edge of the wafer 12. Therefore, a mechanism is needed to judge the difference. How to adjust when consumable parts life cycle Operating parameters to maintain the polishing rate to maintain good grinding quality.
因此在使用CMP裝置研磨過程中，自動依據不同的消耗性 零件生命週期來產生最佳的操作參數設定，以維持良好的研 品貧是必需的。 【發明内容】 本段摘述本發明的某些特徵，其他特徵將敍述於後續的段 落。本發明藉由附加的申請專利範圍定義，其合併於此段落 為參考。 為了改善上述的缺點，本發明揭露一種用於化學機械研磨 (CMP)裝置的操作參數(recipe)自動回饋方法，其步驟包括： • (1)將該.CMP裝置中相關消耗性零件生命週期（consumable parts lifetime)下載(download)至資料庫中，該資料庫包含 第一參照表和第二參照表；（2)利用該資料庫中之第一參照 ，’查出於該CMP裝置中相關消耗性零件生命週期所對應的晶 圓厚度輪廓(thicknessprofile)值；（3)利用該晶圓厚度輪廓 值以及該資料庫中之第二參照表，查出最佳的CMp裝置的操作 參數；以及(4)將該最佳操作參數上傳(upl〇ad)至CMp裝置中。 根據本發明之方法，該消耗性零件為研磨墊(pad)。 根據本發明之方法，該消耗性零件為研磨墊平整器（pad conditioner) 〇 6 1284583 之方法，該消耗性零件為研_(head)。 晶圓厚度輪廓值她）對_研磨位置之 研磨速率方法’其中第二參照表為不同操作參數下， rJ^ 操作溫度的e #作壓力（pressure)、研磨頭及研磨墊轉速、 廓值包括步驟⑸，將_度輪 之用。 、’斗庫之第一與第二參照表内，作為以後比對 控制露:種化學麵研磨_操作參數自動回饋 佳操作參數上傳職eMP裝置U輯’謂比對出的最 台=ί件為研磨墊。 2時’研磨速率對應 迷率ϊϊ::位不同操作參數下’研磨 根據本發明之，以值變化關係表。 研磨頭及研磨塾轉速數包括:研磨率、操作壓力、 至於其它本發明之倾和ί點，將於Τ段啸佳實施例配 7 1284583 合圖式詳細說明解 【實施方式】 體現本發明特徵與優點 血 明中詳細魏。應_的是本婦丨將在後段的說 r：£r^ 效率值:依此表格可以繪製成如第磨位置時的研磨 在第6圖的本發明之流程圖中，如圖所示 ⑴ 晶圓進入CMP裝置之前，將目前CMP裝置消耗性零件g 週，由步驟S02下載到本發明之自細統5。2中(如第$ 圖是本發明系統關係圖），而此自動回饋系統5G2中進一步 括步驟S03將下載的生命週期值與資料庫中第一參照表作比 對’第-參絲是將以往之研磨經驗所累積的晶®研磨厚度輪 廓變化記錄起來，依過去的記錄來判斷此次的研磨過程將會發 生何種的情況，晶圓的邊緣的研磨速率落差有多大等等。 而表2是依照不同的操作參數設定下，CMp裝置研磨晶 圓時，在不同的晶圓研磨位置上之研磨速率（A/m)節錄自一 實施例中第二參照表的部分資料，其中1、2、3、4、5分別代 表不同的操作參數： #1 .RR.8.8，Zonel :7.2，Zone2:3.4，Zone3:3.4，Zone4:3.4，Zone5:3.4; #2.RR.9.8?Zonel:7.9?Zone2:3.8?Zone3:3.8?Zone4:3.8,Zone5:3.8; #3:RR.8.8，Zonel:9.2，Zone2:4.4，Zone3:4.5，Zone4:4.6，Zone5:4.7; 8 1284583 #4:RR:9.3，Zonel:8.9，Zone2:4.4，Zone3:4.1，Zone4:4.6，Zone5:4.7;# 5:RR:11.8，Zonel:9.2,Zone2:4.4，Zone3:4.5，Zone4:4.6，Zone5:4.7; •- 依照這些不同操作參數所得到的如表2的值，可以畫出如 ··· 第4圖的關係圖。Therefore, it is necessary to automatically generate optimal operating parameter settings for different consumable part life cycles during the grinding process using CMP equipment to maintain good leanness. SUMMARY OF THE INVENTION This section summarizes certain features of the present invention, and other features will be described in the subsequent paragraphs. The invention is defined by the scope of the appended claims, which are incorporated herein by reference. In order to improve the above disadvantages, the present invention discloses an automatic feedback method for a chemical mechanical polishing (CMP) device, the steps of which include: (1) the life cycle of the relevant consumable parts in the .CMP device ( Consumable parts lifetime) downloaded to the database, the database includes a first reference table and a second reference table; (2) using the first reference in the database, 'detecting the relevant consumption in the CMP device The thickness profile value corresponding to the life cycle of the component; (3) using the wafer thickness profile value and the second reference table in the database to find the optimal operating parameters of the CMp device; 4) Upload the optimal operating parameters to the CMp device. According to the method of the invention, the consumable part is a polishing pad. According to the method of the present invention, the consumable part is a method of a pad conditioner 〇 6 1284583, which is a head. Wafer thickness profile value)) _ grinding position grinding rate method 'where the second reference table is different operating parameters, rJ^ operating temperature e # pressure (pressure), grinding head and polishing pad speed, profile including Step (5) will be used for the _ degree round. , 'the first and second reference tables of the bucket library, as the later comparison control dew: chemical surface grinding _ operating parameters automatic feedback good operating parameters upload job eMP device U series 'that is the most out of the comparison = ί For the polishing pad. 2 o' polishing rate corresponding to the ϊϊ ϊϊ:: bit under different operating parameters 'grinding according to the present invention, in terms of value change table. The number of revolutions of the grinding head and the grinding wheel includes: grinding rate, operating pressure, and other tilting points of the present invention, which will be explained in detail in the section of the 啸 啸 佳 实施 7 7 12 12 12 12 12 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施Detailed blood in the blood. It should be _ that this woman will say in the latter paragraph r: £r^ efficiency value: according to this table can be drawn as the grinding position in the first grinding position in the flow chart of the invention in Figure 6, as shown (1) Before the wafer enters the CMP device, the current CMP device consumable parts g weeks are downloaded from step S02 to the self-detailed system 5. 2 of the present invention (as shown in Figure # is the system relationship diagram of the present invention), and the automatic feedback system 5G2 further includes step S03 to compare the downloaded life cycle value with the first reference table in the database. 'The first-shen wire is recorded by the past grinding experience, and the crystal polishing thickness profile change accumulated by the previous grinding experience is recorded. To determine what will happen to the grinding process, how much the grinding rate of the edge of the wafer will fall, and so on. Table 2 shows the polishing rate (A/m) at different wafer polishing positions in the CMp device when the wafer is polished according to different operating parameters. The data is extracted from the second reference table in an embodiment. 1, 2, 3, 4, and 5 represent different operating parameters: #1 .RR.8.8, Zonel: 7.2, Zone 2: 3.4, Zone 3: 3.4, Zone 4: 3.4, Zone 5: 3.4; #2. RR.9.8? Zonel: 7.9? Zone2: 3.8? Zone3: 3.8? Zone4: 3.8, Zone5: 3.8; #3: RR.8.8, Zonel: 9.2, Zone2: 4.4, Zone3: 4.5, Zone4: 4.6, Zone5: 4.7; 8 1284583 # 4: RR: 9.3, Zonel: 8.9, Zone 2: 4.4, Zone 3: 4.1, Zone 4: 4.6, Zone 5: 4.7; # 5: RR: 11.8, Zonel: 9.2, Zone 2: 4.4, Zone 3: 4.5, Zone 4: 4.6, Zone 5 :4.7; •- According to the values of Table 2 obtained from these different operating parameters, the relationship diagram of Figure 4 can be drawn.
表1Table 1
Diameter Mean Max Min Range U% 83.30 85.75 88.20 90.65 93.10 95.55 98.00 100.45 102.90 105.35 1 1708 1835 1572 263 7.69 1770 1762 1792 1748 1784 1794 1729 1730 1699 1672 2 1710 1898 1485 413 12.06 1803 1721 1740 1803 1766 1764 1756 1683 1676 1696 3 1659 1827 1403 424 12.78 1732 1745 1758 1721 1692 1736 1747 1715 1651 1636 4 1666 1847 1154 693 20.80 1781 1752 1792 1773 1768 1715 1658 1647 1673 1673 Diameter 107.80 110.25 112.70 115.15 117.60 120.05 122.50 124.95 127.40 129.85 132.30 134.75 137.20 139.65 140.26 1 1672 1668 1649 1680 1631 1638 1663 1632 1678 1703 1718 1746 1744 1738 1706 2 1704 1628 1658 1661 1686 1680 1688 1729 1732 1737 1758 1791 1773 1679 1654 3 1606 1598 1645 1608 1578 1638 1661 1683 1668 1682 1698 1713 1721 1654 1582 4 1659 1646 1653 1656 1678 1686 1688 1717 1729 1680 1689 1626 1591 1490 1468 Diameter 140.88 141.49 142.10 142.71 143.33 143.94 144.55 145.00 145.16 145.78 146.39 147.00 147.61 148.23 148.84 1 1707 1706 1697 1703 1736 1772 1805 1833 1849 1928 1978 2048 2090 1954 1610 2 1621 1571 1598 1485 1536 1541 1589 1641 1621 1708 1733 1777 1816 1816 1718 3 1600 1577 1538 1404 1422 1403 1439 1474 1457 1549 1634 1631 1655 1676 1576 4 1452 1403 1372 1210 1188 1154 1189 1203 1202 1276 1329 1391 1383 1204 716 步驟S04是將由第一參照表中對照出目前裝置的消耗性 零件生命週期對晶圓研磨速率和晶圓厚度輪廓的影響之後，再 根據第二參照表，在不同的操作參數設定中選擇一個最佳的操 作參數，而此操作參數對晶圓研磨厚度輪廓的變化影響，正^ 可以補償因為雜性零件生命職老化對晶圓邊緣的研磨 率所造成的影響。如第5 _裝置中，本發明之自動回饋统 502，會自動的比對資料庫第二參照表内各種不同的操作參數 研磨速率在晶圓上不同研磨點的變化，並判斷 ，償因為雜性零件生命職對晶騎造成的傷 數上傳至CMP裝置501。 卞， 步驟S05疋將所選擇之最佳操作參數上傳至裝 中並依此操作參數來奴CMp裝置，錢行㈣6()5之^^ 9 1284583 研磨晶圓的程序，同樣在此程序完成後，最後將晶圓表面研磨 之結果回存至資料庫作為下次自動回饋系統502中的參照表 資料之一。Diameter Mean Max Min Range U% 83.30 85.75 88.20 90.65 93.10 95.55 98.00 100.45 102.90 105.35 1 1708 1835 1572 263 7.69 1770 1762 1792 1748 1784 1794 1729 1730 1699 1672 2 1710 1898 1485 413 12.06 1803 1721 1740 1803 1766 1764 1756 1683 1676 1696 3 1659 1827 1403 424 12.78 1732 1745 1758 1721 1692 1736 1747 1715 1651 1636 4 1666 1847 1154 693 20.80 1781 1752 1792 1773 1768 1715 1658 1647 1673 1673 Diameter 107.80 110.25 112.70 115.15 117.60 120.05 122.50 124.95 127.40 129.85 132.30 134.75 137.20 139.65 140.26 1 1672 1668 1649 1680 1631 1638 1663 1632 1678 1703 1718 1746 1744 1738 1706 2 1704 1628 1658 1661 1686 1680 1688 1729 1732 1737 1758 1791 1773 1679 1654 3 1606 1598 1645 1608 1578 1638 1661 1683 1668 1682 1698 1713 1721 1654 1582 4 1659 1646 1653 1656 1678 1686 1688 1717 1729 1680 1689 1626 1591 1490 1468 Diameter 140.88 141.49 142.10 142.71 143.33 143.94 144.55 145.00 145.16 145.78 146.39 147.00 147.61 148.23 148.84 1 1707 1706 1697 1703 1736 1772 1805 1833 1849 1928 1978 2048 2090 1954 1610 2 1621 1571 1598 1485 1536 1541 1589 1641 1621 1708 1733 1777 1816 1816 1718 3 1600 1577 1538 1404 1422 1403 1439 1474 1457 1549 1634 1631 1655 1676 1576 4 1452 1403 1372 1210 1188 1154 1189 1203 1202 1276 1329 1391 1383 1204 716 Step S04 is to compare the life cycle of the consumable parts of the current device against the wafer polishing rate and the wafer thickness profile by the first reference table, and then according to the second reference table, in different operating parameter settings. Choosing an optimal operating parameter, which affects the variation of the wafer grinding thickness profile, can compensate for the impact of the abrasive fraction of the wafer edge due to the aging of the hybrid component. For example, in the fifth device, the automatic feedback system 502 of the present invention automatically compares the different grinding parameters of different operating parameters in the second reference table of the database, and judges that the grinding point is different. The number of injuries caused by the life of the part to the crystal ride is uploaded to the CMP device 501.卞, step S05疋 uploads the selected optimal operating parameters to the device and uses the operating parameters to slave the CMp device. The money line (4) 6() 5^^ 9 1284583 is used to grind the wafer, also after the program is completed. Finally, the result of wafer surface grinding is returned to the database as one of the reference materials in the next automatic feedback system 502.
表2Table 2
Diameter Mean Max Min Range U% 83.30 85.75 88.20 90.65 93.10 95.55 98.00 100.45 102.90 105.35 1 1493 1652 1213 439 14.68 1623 1650 1671 1667 1722 1623 1584 1504 1509 1494 2 1553 1680 1402 278 8.96 1528 1563 1551 1545 1566 1509 1525 1528 1544 1515 3 1524 1617 1405 212 6.97 1593 1580 1608 1630 1615 1593 1576 1620 1569 1556 4 1556 1807 1370 437 14.04 1657 1704 1701 1700 1688 1599 1606 1629 1552 1526 5 1584 1839 1431 408 12.89 1503 1544 1592 1590 1618 1604 1588 1553 1504 1506 Diameter 1432 1431 1443 1437 1466 1504 1568 1568 1588 1639 1652 1502 1574 1439 1392 1 1522 1478 1479 1431 1440 1481 1525 1455 1520 1534 1589 1607 1584 1550 1533 2 1432 1431 1443 1437 1466 1504 1568 1568 1588 1639 1652 1502 1574 1439 1392 3 1493 1516 1554 1549 1596 1563 1580 1565 1557 1557 1565 1627 1443 1402 1402 4 1535 1513 1560 1530 1460 1489 1502 1509 1551 1553 1530 1581 1491 1453 1433 5 1563 1562 1534 1527 1510 1509 1511 1534 1513 1557 1537 1486 1464 1420 1415 Diameter 140.88 141.49 142.10 142.71 143.33 143.94 144.55 145.00 145.16 145.78 146.39 147.00 147.61 148.23 148.84 1 1334 1314 1321 1311 1264 1264 1242 1221 1203 1183 1169 1167 1190 1274 1494 2 1440 1445 1455 1447 1525 1560 1581 1572 1546 1518 1497 1489 1512 1546 1680 3 1418 1422 1427 1432 1472 1506 1507 1510 1516 1520 1530 1551 1590 1687 1914 4 1385 1370 1372 1409 1433 1474 1485 1498 1514 1529 1551 1588 1641 1672 1767 5 1547 1584 1600 1605 1645 1642 1658 1677 1698 1718 1742 1779 1841 1964 2223 在本實施例中，當晶圓進入CMP裝置時，下載到資料庫 的生命週期在18〜20小時（也就是Pad 18〜20hr/Condition 18-20hr/Head 18〜20hr)之間時，對照第一參照表其將會產生如 第3圖中之第4條的晶圓厚度輪廓值曲線，明顯的看出在晶圓 的邊緣部分其研磨速率有明顯的下降，造成晶圓的研磨品質不 良。 再對照第4圖的第二參照表，可以發現當使用操作參數第 5 模組時(RR:11.8, Zonel:9.2, Zone2:4.4, Zone3:4.5, Zone4:4 5Diameter Mean Max Min Range U% 83.30 85.75 88.20 90.65 93.10 95.55 98.00 100.45 102.90 105.35 1 1493 1652 1213 439 14.68 1623 1650 1671 1667 1722 1623 1584 1504 1509 1494 2 1553 1680 1402 278 8.96 1528 1563 1551 1545 1566 1509 1525 1528 1544 1515 3 1524 1617 1405 212 6.97 1593 1580 1608 1630 1615 1593 1576 1620 1569 1556 4 1556 1807 1370 437 14.04 1657 1704 1701 1700 1688 1599 1606 1629 1552 1526 5 1584 1839 1431 408 12.89 1503 1544 1592 1590 1618 1604 1588 1553 1504 1506 Diameter 1432 1431 1443 1437 1466 1504 1568 1568 1588 1639 1652 1502 1574 1439 1392 1 1522 1478 1479 1431 1440 1481 1525 1455 1520 1534 1589 1607 1584 1550 1533 2 1432 1431 1443 1437 1466 1504 1568 1568 1588 1639 1652 1502 1574 1439 1392 3 1493 1516 1554 1549 1596 1563 1580 1565 1557 1557 1565 1627 1443 1402 1402 4 1535 1513 1560 1530 1460 1489 1502 1509 1551 1553 1530 1581 1491 1453 1433 5 1563 1562 1534 1527 1510 1509 1511 1534 1513 1557 1537 1486 1464 1420 1415 Diameter 140.88 141.49 142.10 142.71 143.3 。 。 。 。 。 。 。 。 。 。 。 。 。 1507 1510 1516 1520 1530 1551 1590 1687 1914 4 1385 1370 1372 1409 1433 1474 1485 1498 1514 1529 1551 1588 1641 1672 1767 5 1547 1584 1600 1605 1645 1642 1658 1677 1698 1718 1742 1779 1841 1964 2223 In this embodiment, when the wafer When entering the CMP device, when the life cycle of downloading to the database is between 18 and 20 hours (that is, Pad 18~20hr/Condition 18-20hr/Head 18~20hr), it will be generated as compared with the first reference table. 3 The wafer thickness profile curve of the fourth article in the figure clearly shows that the polishing rate is significantly reduced at the edge portion of the wafer, resulting in poor polishing quality of the wafer. Referring to the second reference table in Figure 4, it can be found that when using the fifth module of the operating parameters (RR: 11.8, Zonel: 9.2, Zone 2: 4.4, Zone 3: 4.5, Zone 4: 4 5
Zone5:4.7)時，可以補償因耗材的生命週期對晶圓的邊緣所造 成的傷害，因此本發明之自動回饋系統，將會從第二參照表中 挑選操作參數第5模組回傳到CMP的裝置中，然後依此操作 10 !284583 參數對晶圓進行研磨的程序。 性零裝過程，會將使用的操作參數、消耗 内，可以讓資料庫Γβ曰召矣^磨結果再回存到資料庫的參照表 曰问i梁讀庫參照表更加完整，讓每次CMPM要研麻 j時，更精確的掌握不同的消耗性零件生命二 ^呆^參數’有效的補伽肖耗性零 ^ 害，讓研磨鱗祕持良好n 卩似所&成的傷 縱使本發明已由上述之實施例詳細 施匠思而為諸般軸，然皆不— 【圖式簡單說明】 第1圖是習知技術CMP裝置示意圖。 變化圖 第3 零件生命週期時研磨速率 =是研磨墊_)初期/中期/末期和晶圓邊緣輪廊值 和晶圓研 磨位置之晶圓輪廓值關係圖 第4圖是不同操作參數時研磨速率 圓輪廓值關侧。 疋伟日日®研磨位置之晶 第5圖是本發明之CMP裝置和自動 第6圖是本發明之流程圖。 貝系、，先圖。 1284583 【主要元件符號說明】 10研磨墊 12晶圓 14研磨墊修整器 16裝置 18研磨液 20研磨頭 22緩衝墊 24加壓裝置 26研磨平台 501 CMP裝置 502自動回饋系統Zone5: 4.7) can compensate for the damage caused by the life cycle of the consumables on the edge of the wafer. Therefore, the automatic feedback system of the present invention will select the fifth module from the second reference table and return it to the CMP. In the device, then operate the 10!284583 parameter to grind the wafer. The process of zero-loading will use the operating parameters and consumption, so that the database can be saved and returned to the reference table of the database. The i-beam reading reference table is more complete, so that each CMPM When we want to study j, we can more accurately grasp the life of different consumable parts. The parameter ^'s effective gamma consuming zero is harmful, so that the grinding scale is good and the n is like this. The invention has been described in detail by the above-described embodiments and is not intended to be a shaft. However, the first embodiment is a schematic diagram of a conventional CMP apparatus. Change Graph 3rd Part Life Cycle Grinding Rate = is the polishing pad _) Initial/Interim/End and wafer edge porch value and wafer grinding position wafer profile relationship diagram Figure 4 is the grinding rate for different operating parameters The circular contour value is off the side.疋伟日日® Grinding Position Crystal Figure 5 is a CMP apparatus and automatic drawing of the present invention. Figure 6 is a flow chart of the present invention. Shellfish, first map. 1284583 [Main component symbol description] 10 polishing pad 12 wafer 14 polishing pad conditioner 16 device 18 polishing liquid 20 polishing head 22 cushion 24 pressure device 26 grinding platform 501 CMP device 502 automatic feedback system