TWI283439B - Ionized physical vapor deposition (IPVD) process - Google Patents

Abstract

An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure > 50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

Description

1283439 IX. INSTRUCTIONS: The present application is related to the transfer of the patent application No. 20030034244, which is hereby incorporated by reference. The invention relates to a high aspect ratio through hole and a trench structure of a through hole and a trench structure in a semiconductor wafer having a barrier layer formed by using an ion lining material to form a substrate. Metalization.曰之石夕曰曰固 [Prior Art]

In the metallization of the via hole and the trench structure on the semiconductor wafer, the barrier layer and the seed layer are coated with a good sidewall. u I want to have an ionized PVD deposition system to hide the barrier layer in the advanced IC wafer. In the thin hole and the trench structure, the ionized PVD touches the good sidewall. The requirement for ionization deposition is even more important. Therefore, when we are away from the PVD process, the bottom and sidewall coatings are extremely well-balanced and it is necessary to further control the step coating of the metal (step c〇ver or generally formed during the deposition step). 〇verhang). [Invention] The invention provides an operation method of an ionized physical vapor deposition (iPVD) system: the method comprises: setting a patterned substrate in the processing i of the iPVD system, on the stage Using a low net deposition (LND) process to deposit a barrier layer, where we have to adjust the bias on the wafer stage to build & super & deposition rates in the field of the smear substrate; use no net deposition (NND) The process deposits a layer of crystal on the patterned substrate, wherein we have to adjust the bias voltage on the wafer stage to produce a deposition rate approximately equal to zero in the patterned substrate field. [Embodiment] One = sar Wait for The process of utilizing the sequence of 1283439 TM is disclosed in the patent application publication No. 2〇〇3〇〇34244 (which is hereby incorporated by reference in its entirety assigned to the assignee of the present application). The first month! Gan Tianliang has a large overhang or overburden, but during the deposition sequence ^ some overhang or overburden will form, and it will not be completely removed in the _ order. In the single-vacuum chamber for multiple depositions and side-curing steps, the overhang is basically uncontrollable, and is used to deposit as much as possible of the bottom cladding as well as 7 # I' ^ Re-distribution of the material to the sidewalls and reduction will increase the bottom-side coating of the line resistance, reducing the canine suspension can be achieved in subsequent etching steps. _ , >, seeding physical mouse _ (Lion) secret operating cable / its L 2 1 upper 1: In the processing room, the material is deposited onto the wafer table iLN==f, the barrier layer, where we have to adjust the wafer; the ultra-low deposition rate is established in the % area of the patterned substrate For example, I can make a square = no net deposition (10)) iPVD silk will The seed layer is deposited on the pattern portion, the wall, wherein the person has to adjust the bias voltage on the wafer table to cause the deposition surface of the patterned substrate to have a surface equal to zero, and the surface of the substrate is widened. More than the through hole and the channel Reiner's rate surface; here the super_object is less than about 2LND *NND process per minute; · The process is typically attached to the lion: preparation j true: at the execution to the middle, where to be coated The substrate is supported on a support. In the treatment of the room towel - high-density plasma, the processing gas can be 3 vapors (usually using the miscellaneous method) of the inert gas ^ 3 degrees using the treatment outside the induction, by RF energy ΐ ΐ The body is ionized, and the RF energy ionizes both the processing gas and the partial coating material, which can be a low plasma voltage of only a few volts, and the ionized coating material is then controlled by the substrate. It is guided onto the substrate to coat and/or engrave the substrate. The LND and Excitation 1283439 process of the present invention implements the iPVD process, but the deposition rate is reduced as described in the following example. 'We control the parameters of the ipVD process to generate the field or domain of the plasma or substrate facing the substrate surface. LND or NND results, when controlled in such a way, the iPVD process performed in the manners stated in the various = same examples can produce the desired deposition results of the barrier or seed layer without being characterized A sudden suspension occurs near the opening of the part. • In a material processing system, a wafer or other substrate is disposed on a support (eg, a collet) that can include heating and/or cooling elements; in one embodiment of the invention, ^ is provided with a unique heater element A modified stent comprising a high purity carbon wire encapsulated in quartz. - An exemplary embodiment of the method of the present invention is described below, which will disclose a deposition technique utilizing an iPVD system that deposits ionized metal onto the surface of a field region of a substrate by a flux to metal The high aspect ratio vias and trenches will create a flux on the sidewalls of the features. This technique does not control the metal, the conformality, and the deposition process to eliminate or minimize the overhang or cover layer to reduce the dependence or need an etching step as the state of the suspension control. . In the illustrated embodiment, the process is to first deposit a thin barrier metal layer (e.g., Ta or TaN) followed by a layer of crystalline metal (e.g., Cu). In accordance with an embodiment of the present invention, an ion PV film deposition (iPVD) process is used to deposit material into a high aspect ratio structure having vias or .φ trenches having a size of less than about 13 Å. , the invention a month is different from the prior art, the prior art teaches that the south DG work of the high bias work f increases the storage, or the different vacuum processes (four) implements several product and side steps; It is characterized by an extremely low deposition rate. = We can reduce the DC power to reduce the deposition rate to less than 1 () - or additionally, or with little or no bias applied to the wafer during deposition. 1 shows a simplified cross-section of a wafer in accordance with an embodiment of the present invention. In the case of the example, the via structure 11 has a gold film deposited on the sidewall 16 of the via structure and a metal film 1 deposited on the bottom 15 of the via structure. The modified side process is used to deposit the metal film 10 to the via structure 11* formed in the layer 1283439 t of the semiconductor crystal 12, and when the metal ion 18 is deposited on the yen 12, The metal, the sidewall of the through hole at the entrance of the suspension structure 14 and the method of the present invention provide a demonstration of the second embodiment. • In the process chamber, that is, the gas source 27, which is coupled to the treatment (4), the bias is generated. π and a DC power source 24 coupled to the processing chamber 30. The ipID system includes a controller 50 that is coupled to the processing chamber, the system 23, the vehicle to the Lili control system 29, and is coupled to the first rf source coupling σ to the first source. 28. And coupled to the dc power source 24. The control group further includes an antenna 26, a window coupled to the antenna, a movable deposition baffle 33, a target 25, and a coupling group 34. The RF source can be supplied from the RF generator 27 to the antenna to establish an induced surface-faced plasma in the two or two tlfi30; the permanent magnet is fired, and the secret can be secreted on the tree 25, although the technique can be set, the Laoshantian fJ6 can be set in The processing chamber 30 behind the dielectric window 31 of the processing chamber 30 is preferably formed of a metal material, which is disposed at a process t τίί 31 to avoid deposition to the window 31; the controller 50 can be used

The 5/f rate and when it is applied to the antenna, such as from RF, to the ICP source of antenna 26 can be switched between different power levels during the deposition process. The operating frequency range of the RF generator 27 can range from zMRz to 1〇〇 ΜΙίζ, for example, an operating frequency of about 13.56 MHz can be used or other frequencies can be used. The iPVD processing module also includes a crystal that is coupled to the processing chamber by a z_actuator 35. The substrate-to-power supply distance is generally 150 to 275. After a Hi m nano 200-cut or 300-sided wafer, for example, the wafer 21 can be transported through the opening of the L-map: control opening (not shown) ϊ (not shown) the jr circle can be located The substrate lift pins in the wafer table 22 are mechanically transferred from the device in the wafer table 22, and the table =0 21 is received from the transmission system, and it can be lowered to the wafer from above 22 to the static mine. Crystal® 21 can be supported at the top of the Crystal® table 22, such as 5 〇Vm Ι, Λ 曰曰 I 曰曰 21, temperature, for optimal through-hole metallization. Control 22 and wafer temperature' In addition, the wafer temperature can be controlled by passing the cooling fluid through the wafer: circle 21 = \ circle for proper temperature control. The f-contact of the wafer table 22 can be controlled by providing a gas-to-gas conduction between the two to ensure a thin layer of metal deposition + domain, especially at the via junction. It is preferably about -3 (TC low, preferably less than 0; t, its electric power =; _ is supplied to the wafer table 22 by the RF bias generator 28, and "(4) 1150 can be used Decide which sand offset should be provided for the first time. For example, we can provide a net negative touch on the deposited product. ^, ^ 13.56ΜΖ 1 MHZ ^ 1〇0 MHZ ^ ^ 1283439 c ίΐίί can be supplied to the processing chamber 30 by the domain supply system 23, which is: metal-containing gas or a gas-containing surface; = J = mouse gas can also be any other inert gas Miscellaneous, or compatible 4 = μ ffiff can be controlled by the pressure control system 29. For example, the processing cymbal can be supplied to the processing chamber 3 by the gas ί, 1$ system 23; processing surface ^ field === ·?: Maintained in a vacuum state; the controller can control the process chamber pressure and control the chamber pressure. DC power can be supplied from a power source 24 to the target 25; Or scales sent to practice 25 ^ slow down or stop sedimentation in some cases, by 2 pieces of 状 ' 'must completely cut off the power supply, you can substantially slow down and make inert gas _ force between Between 3G and 13G mTQrr: ==2) Reactive reactivity is supplied under dust separation; (4) 6-9 slave variable substrate to = electrostatic tapping with back side gas heating or cooling; and (6) θ , () , material The surface of the nature is deposited to the extent that it can be removed to avoid particle generation. The general concept of the iPVD system is included in this article.

At the place where Zhongxuan Electric Finance turned to a high metal ion level, this elastic position allows the metal flux flowing to the wafer to be reduced, and the metal flux is reduced. The inevitable result of this scheme is that the process can be made into a conformal fi lm coverage. Controller 50 can be used to provide control information to system components and from system components

1283439 ^Process and / or status data, such as controller 5G can include U Lei Lei 2 ^ ί / η / Ί 200 and monitor the output from iPVD_2GG and M; f if ΐϋ埠 l then 'controller 5G can be ploughed with the system Exchange information, field 2ηΓ “, in the body, the program can be used to control the above iPVD system controller according to the process prescription 5G can be used to analyze process and / or status data, state data contact process and / or status data, and use, The system can be used to compare the process and/or the status data with the target data and the data, and use Compare the results to predict, avoid, and/or declare errors. ώ - f ^ The main splashing of the trapped magnets under the action of the field of the magnets on the surface of the material, the coating material is applied, and the people are thickened. The occupied empty space = area, where - the material of the substantial part is lost (four) and the coating material is formed to be a thousand, and a negative bias is applied to the wafer on the substrate holder, which will attract the positive of the sputtering material. The ions face and arrive from the secondary plasma region On the surface of the board, the incident angle is close to the vertical substrate, so that the positive ions of the splash material can enter the hole on the wafer substrate to cover the bottom of the trench and the hole. 々 In one embodiment, a conical material is used. However, this is not a requirement of the present invention, and other dry material types may be used. The iPVD system provides the following features and properties: (1) requires minimum operator labor and the smallest possible tool set to perform routine tasks, (2) The RF and DC power supplies are separated from the wafer to the best possible extent, (3) providing relative ease of design and operation, and (4) allowing rapid repair or replacement of the source, including rapid replacement of the entire component, (5) Providing internal components of the module, and (6) maintaining & shielding perfection to avoid radiation entering the operating environment. Figure 3 is a simplified flow of a method of operation of a deposition system in accordance with an embodiment of the present invention. In the process of performing a low net deposition (LND) process, a net deposition process (NND) is then applied; in another embodiment, other steps may be performed, including an f-LND process, a single NND process, and an LND process. Gu The various processes of the D process are not the same as 1283439. The method 300 begins with 310. In 315, the patterned substrate/wafer can be placed on a wafer stage of the processing chamber described herein; or an unpatterned substrate can be used. The wafer, the processing chamber can be, for example, a deposition chamber. • In 320, a first process is performed. In one embodiment, the first process can include performing an LND process, and the LND process can be performed in the process chamber; In the embodiment, the f NND process can be applied, and a high-density plasma can be established in the processing chamber, and the high-density plasma can include a high concentration of metal ions and a large amount of processing gas ions, and the patterned substrate can be exposed to the south density plasma. In an embodiment, the wafer table can be vertically adjusted. We can adjust at least one of process chamber pressure, process chamber temperature, substrate temperature, process gas chemistry, process gas flow rate, target material, lcp power, substrate position, target power, and substrate bias power to establish inclusion The deposition rate of ultra-low deposition scales in the field of the patterned base. When the process is performed, the material can be deposited by the person to pattern the characteristic portion of the substrate, so that the protruding material is generated at the opening of the feature portion. – pL:D ί 2 contains LND pre-processing time, LND processing time, or LND after ^; in another embodiment, we can use different times. The LND treatment time can vary from about leap seconds to about 5 seconds; (3) the second change, = 500 seconds; and the LND post-processing time can be self-contained. The second has changed from about 5 to = 可 可 可 可 可 可 离子 离子 离子 离子 离子 离子 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 离子 , , , , , , , , , , , , LND process. The board is ίίίί 2 = system can be packaged ί substrate bias generation 11, which can be used in the ud system, no need to substrate bias = ° in LND system _ /, substrate bias ^ power H value, around: The first value. In another embodiment, the LND bias power can be adjusted to a value greater than the splash value, and the substrate bias power can be changed to ^ 歹 = 12 1283439 steps to ensure the substantial There is no sudden suspension. The substrate bias is generated as an RF generator, and the RF generator can operate in a frequency range from MHz to about 1 GG MHz, for example, the RF generator can operate at about MHz; the substrate bias power range can be from about 〇· The 偏压w to about the surface substrate bias power can range from about 130 w to about 200 w. In addition, the deposition system may comprise a dry material and a dry material power supply, which will provide LND binding power to the ohms; in another embodiment, the 2 material power supply, and the reduced power setting may be in the Wei form. During the LND process, it is difficult to establish the LND deposition margin and the tree power supply is adjusted to the value in the LND region. In another embodiment, during the manufacturing process, the LND tree power supply can be adjusted to be larger than the area (Fig. 7) - the value can be adjusted, and (10) the target power can be adjusted to optimize the process. The point of chemistry is to ensure that there is no overhang in the quality. In our case, the LND can return to the power, and the bile has reached an ultra-low deposition rate in the field of the substrate, and the ultra-low deposition rate is 3 〇 nm/min. Dry material Lai can be DG surface; in another _ implementation, training Wei can be the second "! z frequency range operating RF generator. The L-peak force rate can range from about 1 GW to about 2 GGGW. For example, the LND power can range from about 800 W to about 1600 W. Dry view ^ J. Deposition, the system can be further included - coupled to the permanent magnet group. The age of the age is more integrated into the pressure control of the processing chamber (four) system, and the pressure is two 至少 at least - part of the LND processing time to establish LND processing f ^ lOOm Torr ^ For example, the range of $LND processing chamber pressure can be about 2 〇 to about 7 〇 rainbow (10). The Fenyi ♦ deposition system may comprise an antenna, an optical deposition baffle that is coupled to the antenna with a f window, one side to the dielectric window, and a ～ to a line to provide ICP power to the ICP source of the antenna. Or the power can be adjusted to adjust the power in the processing chamber during the lnd process. For example, a controller can be used, and the ICP power can be changed to optimize the process to ensure the essence. Does not cause sudden suspension. The ICP source can be an RF generator, and it can operate within a range of approximately 彳nM = the rate of the member, for example, the ICP source can range from about _w to about 13 GHz to about 56 MHz. _ w, for example ^^乍, can range from about 3000 W to about 6000 W. The P power specification should be two ===:=, in the _ processing chamber; at _ can be: ===== inflow metal-containing gas, or a combination thereof. "3" rolling body, or teach jiif Γ γ package, containing chlorine, gas, hydrazine, hydrazine, or hydrazine, or a combination thereof; containing all of the disorder can include copper (10), button (five), titanium (five), bismuth (Ru), 铱3 metal (A1), silver (Ag) or platinum (pt) or a combination thereof. ) The layer can be 'LND fracture (four) deposition - barrier layer, for example, the barrier can be in some cases, the wafer can be self- The processing chamber is removed, and in another chamber, we can use, for example, an optical digital contour (10) P) tool; in addition to the scanning electron microscope (SEM) data and ^/ or TEM data. π is used in the crime 5, the implementation of the query To determine when to stop the first process. When the first process is stopped, the method 300 proceeds to 330; when the decision will not stop the first system, the method 300 branches back to 320 and the method 3 Continuing as shown in Figure 3, for example, one or more L. deposition processes may be performed one or more times. / / In 330, a query is performed to determine when to perform the second process. When deciding that the second process will be performed, The method 300 proceeds to 335; when it is determined that the second process will not be performed, the method 300 branches to 355 and ends. A second process may be performed at 335. The process from the first process may be used to determine the type of process to be performed in accordance with the second process. • In an embodiment, the second process may include performing an NND process, and the process Can be performed in the same processing chamber, or the Li D process can be performed in different processing chambers; in other embodiments, the second processing can include one or more LND processes. 1283439 Identify processing time, _ processing time, or after nnd At the same time, we can use different time. The NND treatment time can vary from about leap seconds to about 5G seconds; the processing time can vary from about seconds to about 500 seconds. For example, from about 2 sec to about seconds; the interval can be from about 0 (four) to 5Q seconds. The processing chamber conditions can be changed during post-processing, and the NND process can be implemented, pressure, process chamber temperature, substrate temperature, process gas Chemistry, ICP power, substrate position power, or base

^ or a combination thereof, and changing the deposition rate from the LND deposition rate to the deposition rate may include a field deposition rate, which is the deposition rate of the material in the field of the patterned substrate; the range of the field deposition rate is From about -1 () nm/min to about +10 nm/mm, for example, the field deposition rate can range from about -3 nm/min to about +3 nm/min. The NND deposition rate may comprise a sidewall deposition rate which is the deposition rate of the material on one or more sidewalls of two or more features of the patterned soil plate, the width of the sidewall deposition rate - from about ° nm / Min to about +1° nm/min, for example, the range of the woven deposition rate is from about 0 nm/min to about +5 nm/min; the NND deposition rate may include the deposition rate of the bottom surface, which is the material in the patterned substrate. - the deposition rate on the bottom surface of two or more of the multi-feature features, the deposition rate of the bottom surface ranges from about -10 nm/min to about +10 nm/min, for example, the deposition rate of the bottom surface can range from about -5 nm/ Min to about +5 nm/min 材料 During at least a portion of the NND processing time, material can be deposited onto the patterned features (4), while no material is deposited on the field of the patterned substrate. During at least a portion of the dirty processing time, material may be deposited onto or removed from the underside of the features of the patterned substrate without substantially depositing material into the field regions of the patterned substrate. The substrate bias generator can operate at about 13.56 MHz T during at least a portion of the NND processing time, and the substrate bias power can range from about 5 〇〇w to about 1500 W. For example, the range of substrate bias power can be From about 75〇w to about 9〇〇w. During 15 1283439 _D, the substrate bias power can be adjusted to one or more values in the range greater than the sputtering threshold. For example, the controller can be used, and the substrate can be changed to optimize the process to ensure that Substantially clean deposition in the field region of the patterned substrate. , ^ The range of power can be from W to about W, for example ranging from about 450 w to about 55 G W; ICP power can range from about 2 _ about loooo w, such as target power range From about 3〇〇〇w to about 6〇卯. In addition, during at least a portion of the processing time, the process gas flowing into the process chamber may comprise an inert gas, a nitrogen-containing gas, or a metal-containing gas, or a combination thereof. The 3 milk-rolled legs and the gas-containing gas may include N2, N〇, and 3, and the oxygen-containing gas may include 〇2, (10), the inert gas may include argon, helium, neon, krypton, or xenon, or the gas may include copper. (CU), group (Ta), titanium (Ti), rice (Ru), silver (, ir3 1 (A1), silver (Ag) or platinum (pt) or a combination thereof, when we are in different processing chambers The second wafer stage of the first room of the NND system is implemented; the second process ϊϊΐ Τϊ Τϊ Τϊ 电 电 知 知 知 知 包含 包含 包含 包含 包含 包含 包含 包含 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及Executable _: human 32? chamber 1 force, processing chamber temperature, substrate temperature, process gas 3 buckle, processing cartridge speed, dry material, lcp power, substrate position or substrate bias power or a combination thereof Establish the deposition rate of the surface. 1 rate, in the example, 'deposition can be read and integrated to the Lu-f plate partial test 11 'the second substrate suspension produces H can be - the second sand brother - the first fRF generator can be 1 to the frequency range of 100 MHz to connect ^ Jie / and u surrounding n't about 13.56 mhz operation; the second plate biased to about the substrate material rate =; force 1283439 at least part of the NND During the time period, the substrate bias power can be adjusted to one or more values within the range above the sputtering threshold. For example, a controller can be used, and the second substrate bias power can be changed to the point where the process is optimized. To ensure that no net deposition occurs in the field region of the patterned substrate. "The NND deposition rate may include the field deposition rate, which is the deposition rate of the material in the field region of the patterned substrate; the field deposition rate The range is from about -1 〇 nm/min to about +10 nm/min, for example, the field deposition rate can range from about 1-5 nm/min to about +5 nm/min. The deposition rate of 丽0 can include sidewall deposition rate. , which is the deposition rate of the material on one or more sidewalls of one or more features of the patterned substrate, the sidewall sink rate ranging from about 0 nm/min to about +1 〇 nm/min, such as the side The wall deposition rate can range from about 0 nm/min to about +5 nm/min; the NND deposition rate can include a bottom deposition rate, which is one of one or more features of the patterned substrate or more The deposition rate on multiple bottom surfaces, the deposition rate of the bottom surface is from about one 1 〇 nm / mi: n to about + 10 nm / min, for example, the deposition rate of the bottom surface may range from about -5 nm / min to about +5 nm / min. In another embodiment, the deposition system may comprise a a second target, and the second power source can provide a second power to the second power supply, and the second dry power supply can be a DC power supply. In another embodiment, the second target power supply can be a single generator. It can operate in a frequency range from about 1 MHz to about 1 〇〇 MHz, and the range of the second target power can be from φ, 100 W to 1500 W. For example, the second dry material power can range from about 450. w to about 550 W. In addition, the deposition system may include a second antenna, a second dielectric window that is coupled to the second antenna to the second processing chamber wall, and a second to the second dielectric window. A deposition baffle, and a second ICP source that is bonded to the second antenna to provide a second ICP power to the mystery antenna; the wire can be configured differently. The second lcp work = can be adjusted for the LND process _ establish a high-density electricity in the second processing chamber, as can be used - controller 'and can change the second power to optimize the process' to ensure that the process is not Produce a sudden suspension. - the second 1CP source can be an RF generator and can operate from about 1 〇 MHz to about 17 1283439, for example the second ICP source can be in the range of about 13.56 MHz, for example the second Γ γρ if - 1 CP power It can range from about 2000 W to about 10000 W, and a power range of from about 3000 W to about 6000 W. In the second embodiment, the deposition system may include a second control system coupled to the second processing chamber, the second force control system may be used to establish a lion processing force at least a portion of the profitable The scope of the room service is </ br> § * / 1 1 * ^ &quot; In the example, the deposition system may also include a second gas supply system coupled to the second processing chamber for at least "partial" processing gas Flowing into the second processing chamber to process the gas. w emulsion, each nitrogen gas, oxygen-containing gas, or metal-containing gas, or a group thereof ω and tt gas may comprise N2, N0, age and title 3, and the oxygen-containing gas may comprise 〇2, ship, ; fa; ^:;^ ;f (8), silver (five) or heart)=. ), (_Step: Process ribs can be performed - the following step barrier layer., 曰 > set the 0-day layer, deposit a barrier layer; and repair a second process can include _ process or LND process. Stop Mu, decides when to stop the second process. In the decision process "Cal, tr, r will not stop the second, 3, or more, as shown in Figure 3, and can be used to decide when to stop. Plate temperature data: r processing chamber pressure data, processing room ^ ^ degree data, base X body chemical data, processing gas flow rate data, dry material 1283439 material data, ICP power data, base power data, office data f material power data, substrate deviation amount △ In some cases, the wafer can be placed in the room = material, and combined. I 'for example, we can use the optical number ^ '❿ in another room to test SEM data and / or TEM data.) Tools; in addition, we can decide when to stop when to stop the second process; or the thickness data can be applied by mtlll °; when it is decided that no additional process will be applied, the addition process can include LND process, ^H0 Ί路至355 and ended. , deposition / engraving process, cleaning process, knowing the deposition process, when the remaining time is completed; measurement data can be included in the 7 can be used to determine the steps = data, processing gas chemical data, = gas = material, negative materials, ICP power data, substrate position information, target pressure data, processing time data, or process substrate offset, for example, we can use optical digital wheel (in the 0Dj laboratory to test SEM data and / or TEM data. /, In addition, we can decide to decide when to stop the second process; or the thickness data can be used in Figure 4 to show that according to an embodiment of the present invention, Qian Yi, Shi #在,丨上再ί During the time period, the processor can be set up: Ricky: can be loaded into the processing chamber after 7!! △, and the wafer table can be set at the processing height; processing 19 1283439 in the processing chamber to increase the processing chamber pressure; The back side gas cooling can be started. The electric power is clamped on the aa5] table; the processing room, we can handle the _ private processing of the room towel, to "DC power supply; during the process, can provide the period ΐίi, / _ _ , the village provides the desired _ ΐ) Λϊ; I RF_ power can be adjusted, in the process of ⑽ by 0 ^ LNDRF the desired bias power to the dry wood, and to provide said system _ desired NND RF bias power to the targets. Gong, also

During the post-processing time, the wafer table can be set at the extraction height J body flow and the back texture cooling, and the substrate can be removed from the wafer table, and the pressure can be added to the wafer chamber; the substrate is removed from the wafer table. And FIG. 5 shows an exemplary diagram of the LND process space according to an embodiment of the present invention. As shown in the illustrated embodiment, the LND process space can be defined using the RF bias power as the x-axis and the ratio of the deposition rate to the DC power as the y-axis; in another embodiment, other process parameters and/or combinations of process parameters. Can be used to define the Lnd process space. Figure 5 shows a line 510 crossing one of the points 512, point 512 indicating the point at which the moment begins; and LND area 520 is also shown in Figure 5. The LND area shows a demonstration area where an LND process can be performed. Figure 6 shows an LND process in accordance with an embodiment of the present invention; in this illustrative embodiment, an LND resist P early layer deposition process is shown in which a plurality of different process parameters are varied to achieve a substantially uniform barrier layer. As shown, we can turn on the DC power from the power source 24 to the target 25' to a different level, and then turn off the power during the barrier layer deposition process; "DC power" refers to the application of the power source 24 to the dry material 25 DC power that causes the material to be sputtered. In addition, the ICP power from the RF generator 27 to the antenna 26 can be turned on or off during the LND barrier layer deposition process, and the "ICP power" refers to the RF inductively coupled plasma from the generator 27 used to form the dense plasma; The RF substrate bias power from the 胙 bias generator 28 to the wafer table 22 can also be turned on or off during the LNj) barrier layer deposition process 1283439. "RF substrate bias power is applied to the wafer table 22 wafer. The processing chamber pressure that produces a negative bias on 21 can be used in the LND barrier deposition process. The iPVD system can be used to perform the LND barrier deposition process. During the lnd barrier layer, the deposition process is required. The material can be miscellaneous or evaporated from the source, and then can be converted into positive ions before reaching the crystal to be coated; the complex can be hunted by high-density electropolymerization of the processing gas generated from the vacuum chamber. Secondly, we can apply electromagnetic force to the positive ions of the coating material, such as applying = bias on the wafer, this bias can accelerate the coating material ions toward the wafer, and there are multi-component coating materials. Can be deposited on the wafer at a nearly vertical angle to the crystal $, a uniform thin barrier layer can be deposited on the field surface of the wafer surface and within the aspect ratio aspect of the wafer. The LND process provides excellent cladding of the bottom and sidewalls of the high aspect ratio feature. ° Lu, between the wafer 21 can be supported on the top of the temperature control wafer table 22, the processing body can be supplied from the source 23 to the vacuum processing t 3 〇 β, the king is transferred to the vacuum, and adjusted to the LND process The DC power is supplied from the power source 24 to the material 25, and the power source % can be turned on to suit the power level of the LND process; the wafer RF bias is biased by the RF bias. The state 28 is supplied to the wafer table 22, and the RF bias generator sink can be turned on and adjusted to an appropriate level during the OPC process; in addition, the ICP power from the RF line 26 can be turned on during the LND process. And adjustment; again, the force can be changed to various values in the LND process. The free-edge process gas can be supplied from a gas supply system 23 into the vacuum, and the Lili paste pressure control system 29 of the vacuum processing chamber 30 is maintained. And adjusted to the ionization deposition range of the LND process.,, iPVD system A controller may be coupled to the processing chamber, and the party or parameter; during at least a portion of the LND pre-processing time, during which the at least - processing parameter is adjusted to a second level; and 21 1283439 LND post-processing time period Adjusting the at least one processing parameter to a third level. In the metallization of the high aspect ratio vias and trenches on the semiconductor wafer, we require that the barrier layer and the seed layer have good sidewalls and The bottom cladding, the barrier layer must be as thin as possible without shielding properties; the barrier layer must be thin and thin; the resistance of the through-hole structure must be minimized, and the barrier layer must be conformal and continuous? Is ΐ 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶It is shown that during at least part of the pre-processing time, the processing chamber 1 is at about 50 ^ 〇mT〇rT; and during the processing time, the processing chamber dust force can be large in a period of about 100 mTorr; and after at least a part of the LND is processed. The dust in the treatment chamber may be less than about 2〇mT〇rr, and the difference between the two may be less than about 2°; and the second to the second is less than about 5,000 w and less than about 5 _ W, and The 1Cp power can be less than about 20 W during the post processing time. , 1. Second, the === force r force rate can be less than about W and less than about 15 〇 (^ Wide 1 DC power can be greater than about 1000 &gt; the rate can be less than about 20 W. During the reasonable time, the % power board bias power can be More than j^ LND processing time, at least a part of the back of the sputum · ----- or different LND pre-processing periods can be used. &quot;, force 25 moved to about 35 seconds; range of J period; since more than about 150 seconds ' For example, the range of W ^ treatment period can be determined from the thickness of deposition from about 10 seconds to about 22 1283439. In addition, the post-processing period of LND can be less than about 5 、 shift, _ about 25 seconds lang 35 seconds; ^ adopt i The same conditions can be used to process the substrate, for example, the LND processing time can be established in a LND, and the processing conditions of the H Ϊ and the features can be established. Tightly stacking features

The method ί: is the gas supply system of ίί; and at least a part of the LND (10) is treated after the post-processing, and the breast can be established during the different LND processing time. The flow rate during this time period can be varied. Peach speed, and at different LNDs, in an embodiment, the first process gas may comprise an integral second process gas may comprise - an inert gas η: a metal-containing gas, or a combination thereof; The boring body, or the nitrogen-containing gas or a combination thereof, for example, the inert gas may be chlorine, m gas = one or a combination thereof; in addition, the metal-containing gas may include mm, to attract the two characteristic two products: f is applied to the crystal The circle J is deposited with little or no overhang; thus, U improves the ideal height-preserving metal deposition of the barrier metal. Soils such as Tai^ can be added during the ® barrier deposition process by adding 例, &amp; or another-reaction gas. Typically, the nitrogen flow system is such that the lion system is carried out in the preferred dry material non-poison mode or metal mode of 23 1283439; however, by increasing the flow of the reaction gas, we can change the 'two steps' of the present invention. The metal nitride composition is quite easy to measure from the stoichiometry of the material. Whether we prefer a nitrogen rolling or reactive rolling flow to control the entire deposition process; in addition, nitriding can be controlled by Ar/沁 ion plasma after the deposition step. , ,

The method of the present invention is particularly advantageous when used in combination with an iPVD system and with a polar-sub-material (such as Ta and Cu); this === 30^00 mTorr has the advantage of uniformly depositing the same material under a south pressure, which may also The rate is used to deposit ionized metal; in addition, the process of the present invention is highly adaptable to different metals, especially when used in conjunction with the aforementioned apparatus. The Fortune-iPVD New Zealand operates with a high-gold leakage and a deposition mode of large processing gas ion flux flowing to the f-plate, where the large processing gas ion flux can cause a small viscous of the deposited material. Coefficient (sticki=larger surface mobility, so the invention can be improved.) The iPVD system has a thin ultra-low deposition rate deposition mode applied to the field area of the patterned substrate and is provided. Better conformal coverage, especially for the sidewall coating of the iPVD process. / 'Eight in the embodiment - the lake process, the bias power applied to the wafer is ramped up to even if the deposition still occurs in the feature On the side wall, the thickness of the gold is deposited on the field. This degree can be achieved by reducing the amount of gold to the surface of the substrate. During this process, the interlayer dielectric layer or pre-metallization (pre- The metalized surface is not etched because the deposition and etch rate of the gold number can be balanced by applying a suitable wafer bias. Figure 7 shows an exemplary diagram of a process space in accordance with an embodiment of the invention, such as 24 1283439: tίΪ As shown in the example, _process The ratio can be defined as the y-axis by the RF bias power as the x-axis, and the ratio of the ratio to the power source; in another embodiment space: the combination of the parameters and/or the process parameters can be used to define the nnd process. Point 7 shows that the line 710 of point 712 is not crossed, and point 712 indicates that the NTD area 720 is different in the timing of the start of the etching, and the NND area shows that the NND can be implemented in the example of the invention. Process. In the illustrated implementation layer, we have a variety of different process parameters to participate in the production of a seed layer! A substantially uniform seed layer is obtained. As shown in the figure, during the brain Cu change, 'we can open from the power supply 24 To the DC power of the material 25, the ICP^^' of 26 turns off the % power; in addition, 'from the RF generator 27 to the antenna is turned on and off during the crystal layer deposition process from the RF bias; and ϋ fit to the wafer stage 22 The RF substrate can also be used to charge the positive ions of the coating material to the coating material. For example, 1 = negative ϊ 2 C magnetic force can accelerate the coating material ions toward the wafer, 俾Applying 2 biases to a nearly perpendicular angle to the wafer, the acoustic sinking θ nf has a coating rate of 1 knife Cocoa is deposited on the field of the wafer surface; such: the 'uniform thin barrier layer _ provides a high aspect ratio = width ratio feature inside. At the top of the warm (four) is the use of _ 29 to transfer the domain The core power is supplied from the power source 24 to the dry material 25, and the power source 24 can be turned on and adjusted to a power level suitable for the NND process; the wafer RF bias is by the bias generator 28 And supplied to the wafer table 22, the RF bias generator 28 can also be turned on and adjusted to an appropriate level during the process; in addition, the ICP power generated from the crying 27 to the antenna 26 can be turned on and adjusted during the LND process. In addition, it can be changed to various values during the process of Li D. The process gas can be supplied from the gas supply system 23 into the vacuum process. The pressure of the vacuum process chamber 30 is maintained by the pressure control system 29 and adjusted to the ionization deposition range suitable for the NND process. The second iPVD system can control the control room to the control room, and the financial method benefits the flute during at least part of the _ pre-processing time, the Uif number i is the first level; at least the part of the nnd processing time is as shown in the figure 8, the to (4) force can be less than 3520 ιηΤοιτ; secret _ to do ^ to pressure about 50 mTorr and less than about 1 〇〇 cylinder: . 'Process chamber pressure can be large period of time, the processing chamber pressure can be less than about 2 〇 mT 〇 = to =, minutes _ post-processing time, ICP power can be less than about 20 w; The two parts in front of the time period 'ICP power can be greater than about _ w and: less ^ _ _ less - after the processing time, lcp power ^ 〇〇 W '· and in addition, in at least a part of the front, , =20 W. And at least a portion of the processing time: ^ DC power can be less than about 15 〇〇 W; 1 〇 00 at about 20 W. The DC power can be less than about 丨 during at least a portion of the front. W; and during at least two periods, the RF substrate bias voltage may be greater than about 450 W and less than about &amp; 〇 w processing time, ie, at the base: time period, the 胙 substrate bias power may be less than about = at least - Part _ As shown in the illustrated embodiment, the front processing period may be (4) about % seconds and the period of 26 1283439 period such as the NND processing period may range from about 10 seconds to about i coffee / another one: J is determined by the thickness of the deposit. The heart treatment period can be measured. In addition, the NND post-processing period can be less than about 3 〇. Xie Ziqing, Butterfly ^ in the other ^ ND processing axis 'but the necessary conditions for county purchase. To deal with the beauty; ^ with - or more different processing conditions of the lnd processing period conditions. During the surface treatment time, the tightly stacked feature method can be stitched: and the biliary tree is fine, the second 纟:=: at work 2: sex, nitrogen-containing metal gas, or a combination thereof; third treatment Body J package; Ge or Hui HiS: ί rf qi === can be deposited onto the wafer at a rate of 0.1 nm/min. We applied a very low bias to the bottom of the crystal 27 1283439 53 „the bottom of the feature, because there is no deposition on the projection f and the deposition on the sidewall is substantially uniform. The metal deposition is very little or no money; thus the side wall package is changed. The result is the ideal height metal deposition of the barrier metal. hi^msNND treatment can be used to make fine argon gas for gas plating. For the deposition of a metal nitride barrier layer such as TaNx, nitrogen can also be used during the gallbladder treatment. Or, if it is a suitable process, for example, TaN, N2 jI reaction (4) may be added during the biliary process. Typically, the nitrogen flow system is such that the iPVD system is operated under the preferred dry gas climatic mode; however, the poisoning mode can be By increasing the reaction 吾 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The ratification of the sidewalls of the crucible can be utilized uniformly, and the force can cause the positive argon ions to flow onto the wafer to become overhang when the features 911 are formed. The seed layer 914 can be deposited and other materials can be used. 914 may contain ^; or also within and _ The top surface, t at 911, an additional seed layer may be deposited ⑽, the layer most financial feature 28 ^ overhanging does not occur

1283439 A schematic diagram of another exemplary process of the embodiment of the present invention, wherein the amount #A plate 1η(Γ thlOUgh) region'_process can control the penetration portion ^ other material. 1 or a combination of the 'deposition barrier layer 1012 may not be produced on the special mass without a suspension, the seed layer 1014 may be deposited ====' ΐ: In the embodiment, the seed layer 1014 may comprise (3) Or on the top surface, when the opening of the feature portion does not substantially produce the H additional seed layer 1G16, the plated leg can be finally deposited. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Demonstration of the deposition process, ^, , | No (: SEM results of 11 kinds of crystal layer processes, the results show that the NND process does not produce crying. Although some of the embodiments of the present invention are only described above, familiar with the technology It will be readily apparent that many modifications may be made to the embodiments without departing from the novel teachings and advantages of the present invention. Therefore, all such modifications are intended to be included within the scope of the present invention. The detailed description of the various embodiments of the present invention, as well as many of the attendant advantages thereof BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 shows an exemplary block diagram of a processing system in accordance with an embodiment of the present invention; 29 1283439 FIG. 3 shows a simplified flow of an iPVD system operation method in accordance with an embodiment of the present invention. Figure 4 shows an exemplary deposition process in accordance with an embodiment of the present invention. Figure 5 shows an exemplary LND process space in accordance with an embodiment of the present invention. Figure 6 shows an LND barrier layer deposition process in accordance with an embodiment of the present invention. FIG. 7 shows an exemplary diagram of a NND process space according to an embodiment of the invention, FIG. 8 shows a process for depositing a seed layer according to an embodiment of the invention; FIG. 9 shows an exemplary process according to an embodiment of the invention. FIG. 10 is a schematic view showing another exemplary embodiment of the present invention; FIG. 11 is a view showing an LND process space according to an embodiment of the present invention; - Explanation of the seed layer deposition process of the embodiment % ° [Main component symbol description] 10 Metal film 11 Via structure 12 Wafer 13 interlayer dielectric layer 14 Suspension structure 15 Via structure bottom 16 Side wall 18 Metal ion 21 crystal Circle 22 Wafer Table 23 Gas Supply System 24 DC Power Supply 25 Target 26 Antenna 27 First RF Source 1283439 28 RF Bias Generator 29 Pressure Control System 30 Process Chamber 31 Dielectric Window 32 Chamber Wall 33 Active Deposition Baffle 34 The long magnet group 35 Z-actuator 50 controller 200 iPVD system 300 iPVD system operation method 310 begins 345 setting the patterned substrate/wafer 320 on the wafer table in the processing chamber to execute the first process 325 is completed? Process 335 Performing Second Process 340 Complete No? 345 Additional Process 350 Performing Additional Process 355 End 400 Simplified Deposition Process 410 Pre-Processing Time 420 Processing Time 430 Post-Processing Time 710 Line 712 When the Etching Starts Occurred Point 720 Li D Area 910 Substrate 31 1283439 911 feature 912 barrier layer 914 seed layer 916 additional seed layer 918 plating layer 1010 substrate 1011 feature 1012 barrier layer 1014 seed layer 1016 additional seed layer 1018 plating layer

Claims (1)

1283439 X. Patent application scope: 1. A method for operating a deposition system, comprising: placing a patterned substrate on a wafer table in a processing chamber, and establishing a high-density plasma in the processing chamber, a material in the bean, and a material The ions and a large amount of process gas ions, krypton, and electro-hydraulic water are coated to expose the patterned substrate to the high-density electrode. The power substrate biases the over-rate and deposition rate contained in the field region of the patterned substrate. And depositing material into the features of the patterned substrate, while the solid opening creates an overhang material. And the operation method of the deposition system of the first aspect of the feature patent scope, wherein the 355, the pre-treatment time, the LND treatment time, or the (10) post-processing time, the ί2H, the (10) pre-processing time, The 0 second change to about 50 seconds; the LND = the change from about 10 seconds to about 5 seconds; and the LND post-processing time varies from about to 5000 seconds. Nmi. The method of operation of the deposition system of claim 2, wherein the LND treatment time is greater than about 150 seconds and less than about 250 seconds. The working method of the deposition system of claim 2, wherein the deposition sequence further comprises a substrate bias generator coupled to the wafer stage, the method further comprising: at least a portion of the LND During the processing time, the LND substrate biasing power f is adjusted to be less than a first value in the -sputter threshold range, wherein the LND substrate bias power ranges from about 0 W to about 200 W. 2 / 5. The operation method of the deposition system according to item 2 of the Shen/Qing patent scope, wherein the deposition system further comprises a target, and the power source for supplying the LND target power to the target, the 1283439 square includes : adjusting the LNI) material power to achieve the LND deposition rate during at least a portion of the lnd processing time, wherein the ultra low deposition rate is less than about 3 Å/min, and the LND target power ranges from about 1 〇w to about 2000 w. 6. The method of operation of the deposition system of claim 2, wherein the deposition system further comprises a pressure control system coupled to the processing chamber, the method further comprising: establishing during at least a portion of the LND processing time An LND process chamber pressure, wherein the LND process chamber pressure system is less than about 130 mTorr and greater than about 1 mTorr. 7. The method of operating a deposition system of claim 2, wherein the deposition system further comprises an antenna, a dielectric window lightly coupled to the antenna and the processing chamber wall, and an activity coupled to the dielectric window a deposition baffle, and an ICP source coupled to the antenna, the method of operating the deposition system further comprising: operating the ICP source at a first frequency; and adjusting the ICP source to provide a period during at least a portion of the LND processing time LND ICP power level. 8. The method of operation of the deposition system of claim 7, wherein the LND ICP power level is greater than about 3000 W and less than about 6000 W. 9. The method of operation of the deposition system of claim 5, wherein the deposition system further comprises a target coupled to the processing chamber wall, a permanent magnet group coupled to the target, and a coupling to the target The DC power supply of the material, the operation method of the deposition system further comprises: setting a power output level of the DC power source to a first LND target power level during at least a portion of the LND processing time, wherein the first LND target The power level is greater than about 1000 W and less than about 3000 W. 1) The method of operation of the deposition system of claim 2, wherein the 34 1283439 NND field deposition rate ranges from about -10 nm/min to about +1 〇 nm/min. The method of operation of the deposition system of claim 15 wherein the field deposition rate ranges from about -5 nm/min to about +5 nm/min. The method of operation of the deposition system of claim 14, wherein the bottom surface deposition rate ranges from about -10 nm/min to about +1 〇 nm/min. 2. The method of operation of the deposition system of claim 17, wherein the &amp; surface deposition rate ranges from about -5 nm/min to about +5 nm/min. The method of operation of the deposition system of claim 14, wherein the method comprises a ray D pre-processing time, an NND processing time, or an NND post-processing time, m ^^0 50 #; Seconds i = _ seconds; and the operation method of the deposition system of the 19th item of the _ post-processing person, Shen Qing patent scope, - spoon 3 · during the part of the D D processing time, the handle value is more The 反 伯 反 reverse bias power of 匕 greater than the second sputtering threshold is adjusted to about 500 W to about 1500 watts. The range of the bias power of the middle wire plate is determined from the operation method of the deposition system of the second item, and the range of the power of the substrate is from about 750 W to about _W. Go to the package 23 · The method of operation of the deposition system of claim 19, 36 1283439 1 salary, at least - part of the blue D processing time, the nnd target power is adjusted to a value, where the D target The power range is from about 100 W to about 15 〇〇w. Person: = · The application method of the deposition system of claim 19, more π, less - part of the NND processing time, adjust the ICP source to provide a 5 steal power level, wherein the D DC The power level ranges from approximately 2 _ W main to approximately 10,000 W. _ 1 * Patent application 胄 24 J member's deposition system operation method, wherein the U iCP power level ranges from about 3000 W to about 6000 W. 26. The method of operation of the deposition system of claim 19, further comprising: • establishing an NND process chamber pressure during at least a portion of the NND processing time, wherein the NND process chamber pressure is less than about 〇3〇mT〇rr and Greater than about 丨mT〇rr. • 27. The method of operation of the deposition system of claim 19, further comprising: flowing a second process gas into the process chamber during at least a portion of the process time of the D process, wherein the second process gas comprises an inert gas , a nitrogen-containing gas, an oxygen-containing gas, or a metal-containing gas or a combination thereof. 28. The method of operation of a deposition system of claim 27, wherein the inert gas comprises argon, helium, neon, xenon, or gas, or a combination thereof. 29. The method of operating a deposition system according to claim 27, wherein the metal-containing gas comprises tungsten (W), copper (cu), tantalum (Ta), titanium (Ti), ruthenium (Ru), iridium (Ir) ), aluminum (A1), silver (Ag) or platinum (pt) or a combination thereof. 30. The method of operating a deposition system according to claim 14, wherein the NND process is for depositing a seed layer. 37 1283439 31. The method of operation of a deposition system according to claim 14, wherein the 兮NND process is used to repair the seed layer. ^ &amp; 32. The method of operation of the deposition system of claim 14, wherein the 兮NND process is used to repair the barrier layer. The method of operation of the deposition system of claim 14, wherein the NND process is used to deposit a barrier layer. The operation method of the deposition system of claim 14, wherein the NND process is used to establish a punch through in at least one of the features of the patterned substrate. ^, 35 · Apply The method of operation of the deposition system of the scope of the third aspect of the invention, the deposition system comprising an ionized physical vapor deposition (ipVD) processing chamber. 36 36. The method of operation of the deposition system according to the scope of the patent application, the deposition system comprises a The transmission system / / μ H application method of the deposition system of the scope of the patent range, including: The entire plant power and base flat pressure power is adjusted and established in the field of the substrate The second (10) deposition rate; the characteristic === the characteristic portion of the round substrate; and the operation method of the deposition system of the first aspect of the patent scope is substantially not included, and the method further comprises: disposing the substrate in the second processing chamber On the second wafer stage, the second LND process is performed, and the second LND process is performed, and the cage is buckled, and the Xuan β junction is in the area of the substrate, and the additional material is deposited to the characteristic portion of the substrate. Produce the suspension material. The towel is only inferior in quality, and the operation method of the deposition system of the 14th item of the application, including the whole, D t 'where the power of the material and the substrate _ power are adjusted, the surface sinks Zero product=and the field area of the substrate on the surface of the substrate. The operation method of the deposition system according to claim 14 of the patent application, the package substrate is set in the first The second wafer stage in the processing chamber; the middle and middle application! ^ two NND processes, wherein the m power and the substrate dust power are adjusted by the second bile deposition rate, and the field is in the field of the patterned substrate D deposition rate is about zero; and processing the substrate, thereby depositing material on the patterned substrate. The rigid wall or the bottom surface of the feature of the B-form substrate or a combination thereof. The method for operating a deposition system of claim 1, further comprising: disposing the patterned substrate on a wafer stage in an additional processing chamber; and performing an additional process. 42. The deposition system of claim 14 Operation method, including: The patterned substrate is disposed on the wafer stage in the additional processing chamber; and an additional process is performed. 39 1283439 43. A method of operating a deposition system, comprising: placing a patterned substrate on a wafer stage in a processing chamber; The high brittleness of the high bribe, the substrate is exposed to the high density electropolymerization; the power or the target: the force rate or _ bias includes the NND field deposition rate, the coffee side S$_D deposition rate or Combining; and /U accumulation rate, or surface D bottom deposition rate, using the NND process to _ patterned substrate substrate, the material is deposited on the substrate, wherein the substrate is The bottom surface of the feature portion or a combination thereof, the gas chemistry, the temperature of the processing chamber, the temperature of the substrate, the power of the substrate, the power of the ceramic, or the value of the cup, the body hunger, the material of the material, the power of the ICP, the bias voltage of the substrate, or a combination thereof It has been adjusted. 44. For example, the method of applying the deposition method of the deposition method of the NND field deposition rate, wherein the enthalpy is from about -10 nm/min to about +1 〇 nm/min. NND field deposition rate ^ The operation method of the deposition system of item 44, wherein the ceremonial system is from about -5 nm/min to about +5 nm/min. The operation method of the deposition system of Item 43 of the bottom surface of the NND, wherein the motor has been enclosed from about 10 nm/min to about +1 〇 nm/min. The operation method of the deposition system of Item 46 of the bottom surface of the NND, wherein the light 4 is from about -5 nm/min to about +5 nm/min. 48. If the patent application 々々 NND process includes a method of depositing a deposit of 43 deposits, including the 1J% rational time, the NND processing time, or the NND post-processing time, 1283439 or a combination thereof, wherein The NND pretreatment time varies from about 0 seconds to about 50 seconds; the NND processing time varies from about 1 second to about 500 seconds; and the NND post processing time varies from about leap seconds to about 5000 seconds. 49. The method of operation of the deposition system of claim 48, wherein the NND treatment time is greater than about 150 seconds and less than about 250 seconds. 50. The method of operation of a deposition system of claim 48, wherein the deposition system further comprises a substrate bias generator coupled to the wafer stage, the method further comprising: • during at least a portion of the NND processing time, The NND substrate bias power is adjusted to be greater than a first value in a range of sputtering thresholds, wherein the radix D substrate bias power ranges from about 500 W to about 1500 W. 51. The method of operation of a deposition system of claim 50, wherein the substrate bias power ranges from about 750 W to about 900 W. 52. The method of operation of a deposition system according to claim 48, wherein the deposition system further comprises a ceramic material and a dry material power supply, the material power of the material providing NND dry material power to the target, operation of the deposition system The method further includes: adjusting the NND target power to a value to achieve the NND deposition rate during at least a portion of the NND processing time, wherein the NND target power ranges from about 100 W to about 1500 W. 53. The method of operating a deposition system of claim 48, wherein the deposition system further comprises a dry material coupled to the processing chamber wall, a bonded permanent magnet set, and a coupled to the The sinking power supply of the target, the method of operation of the deposition system further comprises: - adjusting the power of the NND target to a value of 1283439 during at least a portion of the NND processing time to achieve the NND deposition rate, from about 100 W to about 15 〇〇w. Where the range of the NND dry material power is At about 100 mTorr and greater than about 1 mT 〇rr. (4) The method for operating a deposition system of claim 48, wherein: 糸, 、, first includes an antenna, a dielectric direction coupled to the antenna and the processing chamber wall, and lightly coupled to the dielectric window The active deposition plate, and the ICP RF source coupled to the antenna, the method of operating the deposition system further comprises: operating the ICP RF source at a first frequency; and adjusting the ICP RF source to at least a portion of the brain treatment A _) ICP power level is provided during the time period. 56. The method of operating a deposition system of claim 55, wherein the NND Icp power level is greater than about 1000 W and less than about 10,000 W. 57. The method of operation of a deposition system of claim 56, wherein the NND ICP power level ranges from about 3 〇〇〇 w to about 6 〇〇〇 w. The method of operation of the deposition system of claim 48, wherein the deposition system further comprises a gas supply system coupled to the processing chamber, the method of operation of the deposition system further comprising: at least a portion of the NND During the processing time, a first process gas is flowed into the chamber, wherein the first process gas comprises an inert gas, a nitrogen-containing gas, an oxygen-containing gas, or a metal-containing gas, or a combination thereof. 42 1283439 59. The method of operation of the deposition system of claim 58 wherein the inert gas comprises argon, helium, neon, xenon, or krypton, or a combination thereof. 60. The method of operation of a deposition system according to claim 58 of the patent application, the metal-containing gas comprising tungsten (W), copper (cu), tantalum (Ta), titanium (Ti), tantalum (p or silver) (Ir), aluminum (A1), silver (Ag) or platinum (Pt) or a combination thereof, KU), 6L The operation NND process of the deposition system of claim 43 is for depositing a barrier layer. /, Zhongzhi 62. The deposition system of the 43rd patent application scope NND process is used to repair the barrier layer. The operation process of the deposition system of the 63th application of the invention is to use at least one of the features of the patterned substrate to establish a penetration of the patent application scope 43 The operation method of the deposition system changes the process from the surface process to the low net deposition (LND) process ^. = rate changes from the deposition rate to the deposition rate &lt; = the "field deposition rate, the L_wall deposition rate, Or the tNDl rate or a combination thereof, the LM) field deposition rate comprises 22 = 1 = bottom deposition rate, ultra low deposition rate, and /, the bottom surface of the feature in the field region of the patterned substrate or a combination thereof i 1 - Base, suspended material, in which the chamber is moved, where the jd portion is opened: no spoke property, processing gas flow rate, mm plate =, processing n rate, substrate bias-power or combination thereof 12 3 power, substrate position, The light material ^~^ is over-processed to change the process from the NND system to the LND process. nmi5· The method of operation of the deposition system of claim 64, wherein the 琢' Range from about 0 nm/min to about +50 nm/min τ Nm i6. The method of operation of the deposition system of claim 65, wherein the bismuth deposition rate ranges from about 〇nm/min to about +3 〇. ^Deposition system as claimed in claim 64 The method of operation, wherein the rate of deposition of the bottom surface ranges from about -1 G rnn/min to about ϊ NT). The method of operation of the deposition system of claim 67, wherein the rate of the deposition is from about -5 nm /min to about +5 nm/min. ί9 d-specific 64-item deposition system operation method, wherein the i-pot tt Λ 1 time, LND processing time, or (10) post-processing time, ', COSCO pre-treatment time from A change from about 0 to about 50 seconds; the LND is about 500 seconds; and the post-processing time is from about :2, including ===:3⁄4 product=, the method is more rounded to less than - the value of the ship value The range of the ND substrate bias power adjustment power is from about 0 W to about 1 〇〇〇 w. The LND substrate is biased in the middle, and the 72 is as disclosed in the patent item 71. The method for operating a deposition system according to claim 78, wherein the metal-containing gas comprises bismuth (W), steel ((5)), group (Ta), bismuth (Ti), |ft〇(ru), iridium (Ir), aluminum (A1), silver (Ag) or platinum (Pt) or a combination thereof. The operation method of the deposition system of the 64th item, the LND process is used for depositing the seed layer. The operation method of the deposition system of the 64th application of the patent application, the LND process is used for repairing the seed layer . w 83 · The method of operation of the deposition system of claim 65, the medium-sized LND process is used to repair the barrier layer. 〃 μ 84 · The operation method of the deposition system of claim 43 of the patent application, wherein The deposition system comprises an ionized physical vapor deposition (ipVD) processing chamber., 85. The method of operation of the deposition system according to claim 43 of the patent application, the deposition system comprising a transmission system. μ Lu, patent application scope item 64 The method of operating the deposition system further includes: performing a second LND process, wherein the target power and the substrate bias power pass through, in order to establish a second LND deposition rate in the field region of the patterned substrate; and The additional material is deposited onto the features of the patterned substrate without substantially causing the feature opening to create a protruding material. The method of operation of the deposition system of claim 64, further comprising: The substrate is disposed on the second wafer stage in the second processing chamber; the target row is a second LND process, wherein the second target power and the second substrate bias power 46 12834 39 ϊϊί, and in order to establish a feature of the second (10)-thickness-characterized substrate in the field region of the patterned substrate, and substantially not in the operation method of the deposition system of claim 43 of the patent application, further comprising: tM Ding first _ process 'where the shoe material is full, in order to establish a second NND deposition rate, and in the ram, over-dead, the _ deposition rate is about zero; and the field characteristics of the μ patterned substrate === === 4:=3⁄4 of the substrate is passed through the field area, the deposition rate is about zero; and "the substrate is processed by the patterned substrate, thereby _adding material features side money_ The method for operating the deposition system of the substrate of the bristle substrate of the substrate, further includes: the wafer table disposed in the additional processing chamber; the operation method of the deposition system of 64 items, further comprising: setting in the additional processing On the wafer table in the room; Figure 92. A method of processing a semiconductor substrate by depositing material to the