TWI281201B - Method for manufacturing chips by reactor - Google Patents

Abstract

A method for manufacturing chips by a reactor is provided. Firstly, a reactor comprising a reaction cavity and an inner tube is provided. The inner tube is disposed inside the reaction cavity. The inner tube has a boat exit opening, and the wall of the inner tube has a foreign particle. Then, the boat exit opening is sealed by a boat carrier. Next, a continuous fluid is introduced into and out of the reaction cavity. Then, the pressure of the continuous fluid is adjusted to be within a range from 100 torr to 300 torr for removing the foreign particle out of the reaction cavity. Next, the continuous fluid is stopped introducing into the reaction cavity after a cleaning time. Then, the boat carrier is removed. Next, a wafer is placed on a boat. Then, the boat is placed on the boat carrier. Next, the boat exit opening is sealed by the boat carrier and the boat is placed inside the reaction cavity. Then, a reactant source gas is infused into the reaction cavity to proceed the semiconductor manufacturing process of the wafer.

Description

1281201

达三达编号: TW2746PA • Nine, invention description: [Technical field of the invention] The present invention relates to a method for manufacturing a wafer in a reactor, and in particular to a method for cleaning a reactor under a low pressure state with a continuous fluid. A method of manufacturing a wafer using the cleaned reactor. [Prior Art] φ Today's semiconductor industry is developed. In addition to the high quality requirements for semiconductor-related products, it is also the goal of the semiconductor industry to reduce production costs and maximize profits. Semiconductor related products, such as wafers, are subjected to a wafer surface deposition process, such as a Low Pressure Chemical Vapor Deposition (LPCVD) process, via a reactor unit, such as a reactor tube. Therefore, the quality of the wafer is closely related to the control of the reaction tube. However, most reactors encounter the same problem after periodic use, ie the foreign matter of the reactor. The production of foreign matter is usually caused by the reaction of the reaction source gas after the product adheres to the surface of the non-wafer, such as the reactor inner tube, the boat, the column foot or the manifold, which is an unnecessary particle or film. . Therefore, solving the foreign matter problem inside the reactor is a priority. 'The main method to solve the problem of foreign matter inside the reactor is to replace the inner tube of the reactor. After using the reactor - after a certain number of times, the foreign matter reacted to the internal organs will reach a thickness. At this point, the reactor is stopped first, and the components (boats, legs, manifolds, etc.) inside the reactor are taken out in sequence. Then remove the foreign matter (particles or film) on the inner tube and place it 1281201

, Sanda number: TW2746PA * After the other inner tube is replaced by the reactor, the reactor can be reused to manufacture the wafer. This cleaning method is not only complicated, but also has to cost the replacement of the inner tube of the reactor, and at the same time does not increase the service life of the reactor fabrication wafer, and thus is not an efficient cleaning method. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a method for manufacturing a 10 wafer in a reactor by first guiding a continuous fluid into the interior of the reactor, cleaning the reaction under a low pressure, and then applying the reaction. The wafer is fabricated and the life of the inner tube of the reactor is increased. According to an object of the present invention, a wafer manufacturing method is proposed. First, a reactor is provided which includes at least one reaction chamber and an inner tube. The inner tube is placed in the reaction chamber, and the inner tube has a wafer boat inlet and outlet opening, and the inner tube has a foreign body on the tube wall. Then, the boat inlet and outlet openings are closed by a boat carrier. Next, a continuous fluid is directed into and out of the reaction chamber. Then, the pressure of the φ continuous fluid is adjusted from 100 torr to 300 torr to remove foreign matter and carry foreign matter away from the reaction chamber. Next, the continuous fluid is directed into and out of the reaction chamber after a cleaning time. Then, remove the boat carrier. The receiver placed a wafer on a boat. Then the boat is placed in the boat carrier. Next, the wafer boat inlet and outlet are closed by the boat carrier, and the boat is placed in the reaction chamber. Then, a reaction source gas is introduced into the reaction chamber to perform a semiconductor process of the wafer. According to another object of the present invention, a method of cleaning a reactor is provided, the reactor comprising at least a reaction chamber and an inner tube. The inner tube is placed in the reaction 1281201

Sanda number: TW2746PA indoor, the inner tube has a foreign body on the wall. In the cleaning method, first, a continuous fluid is introduced into and out of the reaction chamber. Next, the pressure of the continuous fluid is adjusted from 100 torr to 300 torr to remove foreign matter and carry foreign matter out of the reaction chamber. According to still another object of the present invention, a reactor cleaning method is proposed. The reactor comprises at least one reaction chamber and an inner tube. The inner tube is placed in the reaction chamber and has a boat inlet and outlet opening, and the inner tube has a foreign matter on the wall of the tube. In the cleaning method, the boat is first closed to the opening and exit by a boat carrier. Next, a continuous fluid is directed into and out of the reaction chamber. Then, the pressure of the continuous fluid is adjusted from 100 torr to 300 torr to remove foreign matter and carry foreign matter out of the reaction chamber. Next, the introduction of continuous fluid into and out of the reaction chamber is stopped after a cleaning time. Then, remove the boat carrier. The above described objects, features, and advantages of the present invention will become more apparent and understood.

[Embodiment] FIG. 1 is a flow chart showing a method of manufacturing a wafer according to a preferred embodiment of the present invention. Please also refer to Fig. 2, which shows a schematic view of a reactor in accordance with a preferred embodiment of the present invention. Due to the process of manufacturing the wafer, it is easy to generate unnecessary foreign matter. Therefore, in the process of manufacturing a wafer by using a reactor, it is necessary to use a cleaning method of the reactor, particularly for the cleaning of the reactor in a low pressure state, to remove foreign matter inside the reactor. After that, carry out the semi-conducting of the wafer. 8 1281201

Sanda number: TW2746PA institutional process. First, as shown in step 10, a reactor 200 is provided which has a reaction chamber 202 and an inner tube 220. The inner tube 220 has a boat inlet and outlet opening 222. The reaction source gases of the wafer semiconductor process, such as silane (SiHU) and ammonia (NH3), can enter the reaction chamber 202 from the device inlet 204 for Low Pressure Chemical Vapor Deposition (LPCVD), and then exit the device. 206 export. After a certain number of uses of the reactor 200, the foreign matter generated by the action of the reaction source gas is easily attached to the tube of the inner tube 220 in the form of fine particles or a film. Before the cleaning of the foreign matter of the reactor 200 is performed, the wafer boat 240 is removed first, and then the cleaning work is performed. Next, as shown in step 11, the wafer boat access opening 222 is closed by the boat carrier 260. Wherein, a continuous fluid ρ is supplied from a source of continuous fluid F to provide a continuous fluid ρ, a vacuum pump is connected to the outlet 206 to direct the flow of the continuous fluid F, and the pressure of the continuous fluid F is adjusted. Then, 'Going to step 12, the continuous fluid F is introduced into and out of the reactor 200 by the operation of the vacuum pumping pump, and the foreign matter on the wall of the inner tube 220 is prepared to be removed. At this point, the continuous fluid F will continuously enter the reaction chamber 202 from the unit inlet 204, flow through the inner tube 220, and exit the reaction chamber 202 from the unit outlet 206. Among them, the continuous fluid f will fill the reaction chamber 202 and contact the inner tube 220. Next, proceeding to step 13, the pressure of the continuous fluid F is adjusted by the vacuum pumping pump to make the pressure range preferably from 100 torr to 9 1281201.

Sanda number: TW2746PA 300 tor (torr) to remove foreign matter on the wall of inner tube 220 and take foreign matter out of reaction chamber 202. Wherein, the pressure of the continuous fluid F may be from 150 torr to 250 torr. The method utilizes the action of the continuous fluid F to impact foreign matter in a low pressure state, causing foreign matter on the wall of the inner tube 220 to fall off, and the foreign matter is carried away from the reaction chamber 200 by the continuous fluid F'. Here, the continuous fluid F is a pure continuous fluid containing no foreign matter, and the continuous fluid F' contains foreign matter falling off the wall of the inner tube 220. In order to avoid unnecessary additional reactions, the guided continuous fluid F must preferably be a fluid that does not react with foreign matter, such as an inert gas or nitrogen. Then, proceeding to step 14, after the cleaning time of the continuous fluid F cleaning reactor 200, the source of the vacuum pumping pump and the continuous fluid F can be turned off to stop guiding the continuous fluid F into and out of the reaction chamber 202. Among them, the method controls the cleaning time to be 10 minutes to 30 minutes, preferably 20 minutes. The particle removal rate is proportional to the pressure and cleaning time of the continuous fluid F. The greater the pressure of the continuous fluid F, or the longer the time (cleaning time) for guiding the continuous fluid F, the more molecules that cause the continuous fluid F to contact foreign matter, and the greater the amount of foreign matter carried away. When the pressure of the continuous fluid is 200 torr, the cleaning time is 20 minutes, and the temperature is 400 ± 10 ° C, the cleaning method has the best effect of removing foreign matter. Next, proceeding to step 15, the wafer carrier 260 is removed. So far, the work of cleaning the reactor 200 has been completed. Above, steps 11 to 15 are used to clean the reactor. At the same time, in order to enhance the cleaning effect, the inner tube 220 and foreign objects can be used 10 1281201

Sanda number: TW2746PA The original thermal expansion coefficient is different. The greater the difference in thermal expansion coefficient, the lowering of the material (four) and the foreign matter. If it is - nitride (five), the effect of coffee peeling is better. The material of the foreign material may preferably have a coefficient of thermal expansion of 5, and the inner tube 220 is more preferably quartz (SioVJf) having a coefficient of thermal expansion of 4.5 Å or a coefficient of thermal expansion of 0.54. After performing the varnish of the reactor, the foreign matter in the reactor 200 has been removed. Therefore, it is possible to produce a wafer by 佶Hc10. The semiconductor process of the wafer is performed by the reactor 200. Then, the process proceeds to step 6, I B . . m Place at least one wafer on the Sundial 240 to prepare the wafer semiconductor process. Next, proceeding to step 17, placing the boat 240 on the boat carrier 26, then proceeding to step 18, and then closing the boat inlet and outlet 222 with the boat carrier, and placing the boat 240 in the reaction chamber 2 2 inside. After the crystal boat enters the opening of the reaction chamber 202, the φ boat carrier 260 also closes the wafer boat inlet and outlet opening 222. Next, 'Entering step 19, a reaction source gas is introduced into the reaction chamber 202 to perform a semiconductor process of the wafer, such as a wafer deposition process. After the source of the reaction source gas is passed to the inlet 204 of the apparatus, a reaction source gas such as decane (SiHU) and ammonia (NH3) is started to start low pressure chemical vapor deposition (LPCVD). After the reaction time, a film is formed on the surface of the wafer, such as tantalum nitride (SiNd, the fabrication of the wafer is completed. According to the wafer manufacturing method of the preferred embodiment of the present invention, after performing the cleaning method of the reaction, Perform the detection of foreign matter inside the reactor. 11 1281201

Sanda number: TW2746PA The detection steps are: (1) placing a control wafer on the wafer boat 240, and (2) filling the wafer boat 240 with a dummy wafer or a dummy wafer; (3) performing a wafer deposition process; (4) taking out the wafer, observing and estimating the amount of foreign matter (particles) on the wafer by a microscope, and recording the data of each test. Referring to Fig. 3, there is shown a statistical diagram of the presence or absence of foreign matter residual_detection data after the foreign matter is removed by a continuous fluid in a low pressure state in accordance with a preferred embodiment of the present invention. As shown in Fig. 3, in the case of the foreign matter detection data after the section I was subjected to the conventional conventional cleaning method, it was observed that the amount of foreign matter in the reactor was high, indicating that the inside of the reactor contained a large amount of foreign matter. Therefore, it is not suitable for the wafer deposition process. In the section II, the result of the foreign matter detection data after the cleaning method of the present invention was carried out, the decrease in the amount of foreign matter was clearly observed, indicating that a small amount of foreign matter was contained inside the reactor. Therefore, the degree of cleaning is quite suitable for the wafer deposition process. That is, the cleaning method of the present invention is excellent in effect, and the removal ability is increased by about 3% to 50%, and the > foreign matter of the reactor is effectively removed. The method of manufacturing a wafer by the reactor disclosed in the above embodiments of the present invention guides the continuous fluid and controls the pressure and the cleaning time without taking out the inner tube of the reactor. By the action of the continuous fluid on the foreign matter and the different expansion coefficients of the inner tube and the foreign matter, not only the foreign matter in the reaction chamber can be effectively removed, but also the service life of the reactor can be increased to save the equipment cost. In view of the above, the present invention has been disclosed in a preferred embodiment, and is not intended to limit the present invention. The invention belongs to the technical field of the invention 12 1281201

The three-way number: TW2746PA can be used for various changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

13 1281201

Sanda Number: TW2746PA [Simple Description of the Drawings] Fig. 1 is a flow chart showing a method of manufacturing a wafer in accordance with a preferred embodiment of the present invention. Figure 2 is a schematic illustration of a reactor in accordance with a preferred embodiment of the present invention. Fig. 3 is a graph showing the presence or absence of the residual matter detection data of the foreign matter after the foreign matter is removed by the continuous fluid in a low pressure state according to a preferred embodiment of the present invention. " [Main component symbol description] 200: Reactor 202: Reaction chamber 204: Device inlet 206: Device outlet 220: Inner tube 222 · Crystal boat inlet and outlet _ 240 · Crystal boat 260: Boat carrier 14

Claims (1)

1281201 Sanda number: TW2746PA X. Patent application scope: 1 · - Method for manufacturing wafers' includes: providing a reactor comprising at least one reaction chamber and an inner tube, the inner tube being placed in the reaction chamber The inner tube has a wafer boat inlet and outlet opening, the inner tube has a foreign body on the tube wall; a wafer boat carrier closes the wafer boat inlet and outlet; guides a continuous fluid into and out of the reaction chamber; adjusts the continuous fluid a pressure of 100 torr to 300 Torr (torr) to remove the foreign matter and carry the foreign matter out of the reaction chamber; stop guiding the continuous fluid into and out of the reaction chamber after a cleaning time; The wafer carrier is placed on a wafer boat, and the boat is placed on the boat carrier; the boat carrier is used to close the boat inlet and outlet opening and the wafer boat is placed in the wafer boat The reaction chamber; and _ a reaction source gas is introduced into the reaction chamber to perform a semiconductor process of the wafer. 2. The method of claim 1, wherein the continuous fluid has a pressure of from 150 torr to 250 torr. 3. The method of claim 2, wherein the continuous fluid pressure is 200 torr. 4. The method of claim 1, wherein the continuous flow system is an inert gas. 5. The method of claim 1, wherein the continuous 15 1281201 is numbered: TW2746PA flow system nitrogen. 6. For the case of a full-time job, please refer to the method of “Dimensional Division”, and “the system does not react with the foreign body—continuous fluid. ^ Shimen 1.2 Please refer to the method described in item 1 of the patent scope, where the cleaning day is 10 minutes to 30 minutes. 8. If you apply for the special section, the time series is 20 minutes. / The method of claim i, wherein the foreign matter has a different coefficient of thermal expansion. The method of claim 9, wherein the foreign matter = nitride (10) dde), the material of the (four) f is quartz (s丨 (6) or carbonized stone eve 11. a cleaning method of the reactor, the reactor is at least Including a reaction chamber and an inner tube, wherein the inner tube is placed in the reaction chamber, and the inner tube has a foreign body on the tube wall, the method comprising: guiding a continuous fluid into and out of the reaction chamber; and adjusting the continuous fluid The displacement force is 100 Torr ((4) to 300 Torr (torr) to remove the foreign matter and take the foreign matter out of the reaction chamber. 12. The method described in the scope of claim U, wherein the performance is The pressure of the fluid is from 150 torr to 25 Torr (t〇n <). The method of claim 12, wherein the pressure of the fluid is 200 Torr (t〇rr 14. The method of claim 5, wherein the freewheeling system is an inert gas. 16 1281201 Sanda number: TW2746PA 15. The method of the patent application range 帛n, the freewheeling system nitrogen. , rβ 连 16 · as described in the scope of patent application 帛 u Wherein the freewheeling system - a continuous fluid that does not react with the foreign matter. "17. The method of claim 5, further comprising: stopping the guiding of the continuous fluid into and out of the reaction after / washing time The method of claim 17, wherein the washing time is 10 minutes to 30 minutes. The method of claim 18, wherein the washing time is 20 minutes. The method of claim 11, wherein the inner tube and the foreign matter have different coefficients of thermal expansion. ... a cleaning method for the reactor, the reactor comprising at least an anti-chamber and an inner officer, Placed in the reaction chamber, the inner tube is in the form of a boat (4) π 'the inner tube has a foreign body on the wall of the tube, and the method comprises: closing the inlet and outlet of the boat with a boat carrier; Continuous fluid enters and exits the reaction chamber; adjusts the pressure of the continuous fluid to 1 Torr ((4) to 3 (8) Torr (to remove the foreign matter and take the foreign matter out of the reaction chamber; stop guiding after β washing) Leading the continuous fluid into and out of the opposite ; Xi and spear away boat supporting base addition &. The method of claim ΐ Please patentable scope of item 21, wherein the linkage 17 wherein the linking 1281201 Sanda number: TW2746PA The pressure of the continuous fluid is 15 torr to 250 torr (t〇rr). 23. The method of claim 22, wherein the pressure of the continuous fluid is 200 ears (t〇rr). X 24. The method of claim 21, wherein the freewheeling system is an inert gas. ^ 25· The method described in claim 21 of the patent scope is a freewheeling system nitrogen. 26. The method of claim 21, wherein the continuous flow system is a continuous fluid that does not react with the foreign matter. 27. The method of claim 21, wherein the main day is between 10 minutes and 3 minutes. 28. The method of claim 27, wherein the washing time is 20 minutes. Χ /月 29. The method of claim 21, wherein the inner tube and the foreign matter have different coefficients of thermal expansion. X / 30. The method of claim 29, wherein the foreign body is a nitride, and the inner tube is made of quartz (9).