I279556 人、發明說明： 【發明所屬之技術領域】 · $制2日1是有關於一種微彈性接觸器（miCr。—s_g contactoO 之政方法及其結構’特別是有關於—種應用於電子辦之電子 生接觸為之製造方法及其結構。 【先前技術】 在測試咼性能電氣裝置，如超大型積體 日_^=用高性能的探針(⑽e)或接觸器（c〇nt(ac J二 spHngeQntaeta〇_於各類電子元件之 n。連接（接觸）之組件’如半導體元件之裸晶測試^阶 枝測忒寻測5式組件；或應用在電子元件之連接裝置，如半導 ^兀ί之!丨線及封裝。而探針卡是朗在積體電路⑽尚未封裝 =，對裸晶以探針(pr〇be)做功能測試，篩選出不良品、再進行之 程。因此，是積體電路製造中對製造成本影響相當大 刈〇/沾白H，此棟針卡可使成品的良率由原來的70%提升至90%， ' °、良獻度對1%良率差異都錙銖必較的半導體廠而言，影響 ’探針卡是一測試機台與晶圓間之介面“ 接L /需一片相對應之探針卡’而測試的目的是使晶圓切割 ，^品^入下一封裝製程並避免不良品繼續加工造成浪費。因I279556 Person, invention description: [Technical field of invention] · $2 is a micro-elastic contactor (miCr.-s_g contactoO's political method and its structure', especially related to The manufacturing method and structure of the electronic contact are used. [Prior Art] In testing the performance of electrical devices, such as ultra-large integrated bodies, _^= using high-performance probes ((10)e) or contactors (c〇nt(ac) J spHngeQntaeta 〇 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ^兀ί之!丨线和包装。 And the probe card is in the integrated circuit (10) is not yet packaged =, the bare crystal is tested with a probe (pr〇be), screening out defective products, and then proceed. Therefore, it is a considerable impact on the manufacturing cost of the integrated circuit manufacturing. This needle card can increase the yield of the finished product from 70% to 90%, '°, good contribution to 1%. The difference in yield is inevitable compared to the semiconductor factory, the impact of the probe card is a test The interface between the test machine and the wafer is “connected to L/requires a corresponding probe card.” The purpose of the test is to cut the wafer, and to prevent the defective product from continuing to be processed.
Llil信賴度（high reliability)是判斷探針卡製造商競爭 力相當重要的指標。 抑=上，如美國專利第4,757, 256號所揭露之環氧樹脂環式 二rmg Pr〇be Card)，因這類具有少量、多樣及彈性 :點’至今仍是業界廣泛能接受的技術。這類探針卡的製 人工逐根擺放的方式組裝探針，再上職定完成環氧 J二衣式板針頭（Epoxyringpr〇behead);再將這探針頭（probe ea上之板針逐根以焊錫的方式與印刷電路板(pCB)接合；之後 1279556 度有較佳針於加工’使得所有探針的共平面 麸而制進仃彳木針取後位置的檢查及調整。 多樣幻單性脂;!ffi十卡雖具有製造時間短、少量、 效降低探Μ ’但仍有—絲本設計的魏。為使能有 層探針受力間:ΐ:蝴降低間距’但其造成每 長、也不ff十也不同，這限制探針數不能再成 ^ Logic 簡言之，未來探針卡括r將ΐ丄^頻寬約職日月顯不足。 粒測鮮展罙針分佈、高頻測試及多晶 ^展上叙種祕統的探針卡製作方法已不用 此，近年來有許多解決方案提出，如下說明。 樑(cLir專7 Τ’19M虎揭露一種探針卡，其探針以懸臂 料m—ever beam)疏放’微接繼構錄㈣縣緣、呈全 ^-^(pyramid structure) ^ 讀(piezQel隨ie elements)使這些探針能主動地 下私動，電子訊號連接是在懸臂樑的一侧沉積一導電薄膜以 待測元件與檢測器。眾所周知，石夕是—脆性材料=== 曰曰=材料強度㈣、錄(toueh_d_細㈣將較低；又 號ΪΪ上述導電薄膜傳送將使阻抗提高，負載很容易過 阿而紐路。間言之，由上述製程所製作而成之探針卡其 不能符合工業界越來越高的需求。 又、 又美國專利第5, 476, 211號揭示一微電子元件彈隻 ^ (wire bondin,)^^ 兀件之接點（pad)上逐根焊接金線(gold wire)並繞成特定的俨 (probes)形狀，然因金線太軟無法提供足夠的材料強度，^此 在其外表披覆一層較硬的材料（如鎳或鎳合金)形成彈菩= 以滿足測試所需之強度。然這技術目前最小間距(pitc^)約⑽70， 然隨著電子元件上之接點(pad)間距日益緊密，這技術越來越^以 6 t 1279556 滿足所需；且因這類彈簧互連牟件製程限制其生產速度也使得其 售價居咼不下、並限制僅可應用在DARM testing。。Llil's high reliability is an important indicator of the competitiveness of probe card manufacturers. For example, the epoxy resin ring type rmg Pr〇be Card disclosed in U.S. Patent No. 4,757, No. 256, is a widely accepted technique in the industry because of its small size, variety and flexibility. The probe card is assembled by manual placement of the probe, and then the epoxy J-plate needle (Epoxyringpr〇behead) is completed; the probe head (the needle on the probe ea) is used again. It is soldered to the printed circuit board (pCB) one by one; after that, there is a better needle processing at 1279556 degrees, so that the coplanar bran of all the probes can be inspected and adjusted after the position of the beech needle is taken. Monosexual fat;!ffi ten card has a short manufacturing time, a small amount, and a reduction in efficiency. 'But there is still a silk design. In order to enable the layer probe to be stressed: ΐ: butterfly reduces the spacing' but its The length of each probe is not the same as that of ff. This limits the number of probes to no longer. Logic In short, in the future, the probe will include r^ 频 频 频 频 频 频 频 粒 粒 粒 粒 粒 粒The distribution, high-frequency testing, and the method of making the probe card for the micro-crystals have not been used. In recent years, there have been many solutions proposed, as explained below. Beam (cLir special 7 Τ '19M tiger exposes a probe card , the probe is suspended by the cantilever m-ever beam, and the micro-continuation is recorded. (4) County edge, full ^-^ (pyramid structure) ^ Reading (piezQel with ie elements) enables these probes to actively move underground. The electronic signal connection is to deposit a conductive film on the side of the cantilever beam to measure the component and the detector. As we all know, Shi Xi is - brittle material ===曰曰 = material strength (four), recorded (toueh_d_ fine (four) will be lower; ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ ΪΪ The probe card does not meet the ever-increasing demands of the industry. Moreover, U.S. Patent No. 5,476,211 discloses a contact of a microelectronic component bomb (wire bondin) ^^ component. Gold wire is welded one by one and wound into a specific probe shape, but because the gold wire is too soft to provide sufficient material strength, it is coated with a harder material such as nickel or nickel. The alloy) forms the elastic force to meet the strength required for the test. However, the current minimum pitch (pitc^) of this technology is about (10) 70, but as the pitch of the pads on the electronic components becomes closer, this technology is becoming more and more 6 t 1279556 meets the requirements; and due to the limitations of such spring interconnect components Such that the production speed is less than the price of home 咼, and can be used in only limited DARM testing ..
又美國專利弟5, 613, 861號揭示一在基板上經由光敍刻技術 (photo 1 i thography techno 1 ogy )形成可圖案化之彈簧互連元件 (patterned spring contact)製造方法。其製造方法是在基板上 以濺鍍（sputtering)沉積具有固定應力梯度之金屬薄膜（二鎳鈷 合金或鉻鉬合金），再將其一側由基板釋放形成弧形形狀之彈筈互 連元件。這發明限制彈簧元件之厚度，使得這元件之彈性常數 K(=Force/deflection)太小，如此將無法產生對電子元件可靠的 墨力接觸。簡&之，接觸力（contact force)過小、造成接觸阻抗 (contact resistance)過大，又其電氣訊號僅靠一數微米之= 傳送將使阻抗提高，負載很容易過高而短路。 /' 、 為克服這些缺點美國專利第6,64〇, 432號（台灣專利第 546, 803號）揭不一改良技術，其中彈簧互連元件包括可連接於基 ，的第一元件材料(如Pd/C〇合金），及包括具有可熱轉變性質二 第二元件材料(如Ni/Co合金），如此當第二元件材料之性質改變 時簧互連元j!(ShaPed SpringS)的形狀可修正為弧形，、且： 使彈百元件之厚度增加，以加大這元件之彈性常數K，第一、二^Also, U.S. Patent No. 5,613,861 discloses a method of forming a patternable spring contact on a substrate via photo lithography techno 1 ogy. The manufacturing method comprises the steps of: depositing a metal film (NiNiCo alloy or chrome molybdenum alloy) having a fixed stress gradient on a substrate by sputtering, and releasing one side of the substrate from the substrate to form an arc-shaped elastic interconnecting element. . This invention limits the thickness of the spring element such that the element's spring constant K (=Force/deflection) is too small to produce a reliable ink contact to the electronic component. Jane & contact force is too small, causing excessive contact resistance, and its electrical signal is only a few micrometers = transmission will increase the impedance, the load is easily too high and short circuit. In order to overcome these disadvantages, U.S. Patent No. 6,64, 432 (Taiwan Patent No. 546,803) discloses a modified technique in which a spring interconnecting member includes a first component material connectable to a base (e.g. Pd/C〇 alloy), and including a second element material having a thermally convertible property (such as Ni/Co alloy), such that the shape of the spring interconnect element j! (ShaPed SpringS) can be changed when the properties of the second element material are changed. Corrected to an arc shape, and: Increase the thickness of the elastic element to increase the elastic constant K of the element, first, second
件材半! ϋ電鍍方式沉積。鎌據古典力學理論得知，熱轉變將C 成这彈黃兀件的殘留應力，這將使得這類彈簧元件的接觸次= (touch-down number)明顯較低。 一又美國專利第6, 084, 420號（台灣專利第4〇6,860號)揭示一 二臂式、橋式微探針結構，這發明在微彈性機械設計上明 間距再降低的能力，很難滿足目前的需求。有鑑於此，此公 出-剛性微探針設計以克關距無法再降低的關，如美^ 第2003/141889號（台灣專利第565,529號），然因這 =簡針與制電子元件存在—技好面誤差，為使 有良子的铜需加大觸力，且因微探料具使得接觸凸塊 上(contact bump)形成較深的破壞，進而影響後續的封裝製程。 1279556 - 從上述.可知，一個高可靠度、高性能之電 :組件需具備有高密度分佈及bulk彈性微結性。^八卜 .提;行;^細間距接觸墊測試的需求，：= .ί二耻，罐於彈菁互 【發明内容】 、去及ίϊΠίίΓί目的在於提供—微彈性接觸器之製造方 性常數、_力、之外，更具有控制欲達到之彈 構，其所製作出之微彈 2阻止’以控制微彈性接觸器結構 觸器結構因過度形變而損毀。 A 乂里而了避免微哮性接 έ士娃本t月之再目的在於提供—微彈性接觸哭之繫芒方半月坌 ^用 作-出之微彈性接觸器可運用於半i體裸晶 係先二f u供—種微彈性接觸器之製造方法， 基板上，形成—盘此’接者在未覆蓋圖案化光阻層之 金屬犧牲層具有選擇性基=面_成-與第-化步驟，以使第二入严a 性的弟—孟屬層，接著進行一平坦 重複上述相同製程二:3:金屬犧牲層達到相同厚度，然後 以由不同圖形去定義微彈性接觸器想要獲得Parts half! ϋ Electroplating deposition. According to classical mechanics theory, the thermal transition will cause C to become the residual stress of the yellow scorpion, which will make the touch-down number of such spring elements significantly lower. U.S. Patent No. 6,084,420 (Taiwan Patent No. 4,6,860) discloses a two-arm type, bridge type micro-probe structure, which has the ability to reduce the distance between micro-elastic mechanical design and is difficult to meet. Current needs. In view of this, the male-rigid microprobe design can not be reduced by the gram distance, such as US ^ 2003/141889 (Taiwan Patent No. 565, 529), but because of this = simple needle and electronic components exist - Technical error, in order to make the good copper need to increase the contact force, and the micro-exploring material makes the contact bumps form deep damage, which affects the subsequent packaging process. 1279556 - From the above, we can see that a high-reliability, high-performance electricity: components need to have a high density distribution and bulk elastic micro-junction. ^八卜.提;行;^The requirement of fine-pitch contact pad test,:= ί二耻, cans in the elastic phase [invention], and ίϊΠίίί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί , _ force, in addition, more control of the desired elastic structure, the micro-elastic 2 made to prevent 'to control the micro-elastic contactor structure of the contactor structure due to excessive deformation and damage. A 乂 而 避免 避免 避免 避免 避免 避免 避免 避免 避免 避免 避免 避免 避免 避免 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本The method for manufacturing a micro-elastic contactor is provided on the substrate, and the substrate is formed on the substrate. The metal sacrificial layer of the uncoated patterned photoresist layer has a selective basis = surface------- Steps to make the second sturdy A-Men layer, followed by a flat repeat of the same process described above: 2: The metal sacrificial layer reaches the same thickness, and then the microelastic contactor is defined by different patterns to obtain
S 8 1279556 勺¥寸1± (如名人達到之彈性常數、接 的結構剛性等)，而形成第-金屬犧牲層内能力及足夠 彈性接觸元件，最後移除掉第—全1 弟7屬層之多個微 性接觸元件。 蜀犧4層’進而釋放這些微彈 土於上述目的，本發明提供一種微彈性接_%ϋ # 由多個水平支撐體、至少_水平桦結構，主要係 中，多個水平支雜相互堆疊連接， 所構，。其 的水平支撐體連接’而微接觸結構係盘水俨最頂部 維持足夠的結構=。牙 紐聽，而可調整彈性力並 【實gir之較佳實施例與技触容，舰合圖式說明如下·· 性接ΐί序Γ閱「第11〜卜9圖」，該些圖式係為本發明之微彈 實施例的製作流程圖。首先，請參_ η圖， 柄100且供i有空間轉換（Space transf〇rmer)的基板100。此基 Ϊϋί ^將接觸墊職C〇ntaCt Pad)重佈(dlStnb此⑻、 /提供很好共平面度（C0-Planner)的功能，並可在相反 、面形成相應接觸墊1〇4 ’其中，接觸墊1〇2與接觸墊1⑽係 内層線路106電性連接’且接觸塾1〇4例如是與測試電路（圖未 =出）電性連接。此外’基板⑽可為陶兗基板、玻璃基板或FR—4 土板等，在工業上可容易獲得為多層陶瓷基板l邳奸 ceranucs substrate，MLC)或低溫共燒陶莞基板〇〇w对· ⑺―flred . Ceramics substra1：e，LTCC)或多層聚亞醯胺基板 (Polyimide substrate)0 接著，如第1-2圖，在基板loo之上表面沉積一種子層（seed 27) 110，種子層11〇材料可為銅、鈦(Ti)、鈦/鶴（Ti/W) 3至或其匕合適的金屬，而種子層HQ的目的在提供後續製造微 彈性接觸器的電鑄（eleckofoming)/電鍍（electr〇plati呢）製 1279556 i 丁 本實施例·中’採_技術沉積約5〇〇()埃銅薄膜較 乜其=如条鍍、無電鍍亦是可行的技術。 顿孕乂 者Fit^ ’在基板⑽上塗佈—光阻（PhQto—Resist， ΞΪΓ-Ξ ίΓΪ 5 (deVel〇pment) 12Q ’其厚度㈣微米較佳，且以本實施 之後，如θΊ f阻層12G之部分制應於接觸墊1G2的上方。 層120之L^ nn電鑛/無電鑛的方式在未覆蓋圖案化光阻 —全屬犧“ nn严成—與圖案化光阻層12G相同厚度之第 性接觸器材料選擇性侧的娜 ，、I、後，衣作顺 的4寸〖生在本貝轭例中以銅（Cu)或銅合 Γ^ΐ圖卜5 ’將圖案化光阻層⑽去除。接著，如圖S 8 1279556 Spoon ¥ inch 1± (such as the elastic constant reached by the celebrity, the structural rigidity of the joint, etc.), and the ability to form the first metal sacrificial layer and sufficient elastic contact elements, and finally remove the first 7 layers of the first A plurality of micro-contact elements. In order to release the micro-elastic soil for the above purpose, the present invention provides a micro-elastic connection _%ϋ# from a plurality of horizontal supports, at least _ horizontal birch structure, in the main system, a plurality of horizontal branches are stacked on each other Connected, constructed, Its horizontal support is connected to 'and the micro-contact structure is the top of the leeches to maintain sufficient structure =. The teeth can be adjusted, and the elastic force can be adjusted. [The preferred embodiment and the technical touch of the real gir, the ship-in diagram is as follows.······························ It is a production flow chart of the micro-elastic embodiment of the present invention. First, please refer to the η map, the handle 100 and the substrate 100 for space conversion (Space transf〇rmer). This base Ϊϋ ^ will be in contact with the C〇ntaCt Pad) (dlStnb this (8), / provides good coplanarity (C0-Planner) function, and can form the corresponding contact pad 1 〇 4 ' on the opposite side The contact pad 1〇2 is electrically connected to the inner layer 106 of the contact pad 1 (10), and the contact 塾1〇4 is electrically connected to the test circuit (not shown), for example, the substrate (10) may be a ceramic substrate or a glass. Substrate or FR-4 earth plate, etc., can be easily obtained industrially as a multilayer ceramic substrate l ceranucs substrate, MLC) or low temperature co-fired pottery substrate 〇〇 w pair · (7) ―flred . Ceramics substra1:e, LTCC) Or a multilayer polyimide substrate 0. Next, as shown in FIGS. 1-2, a seed layer (seed 27) 110 is deposited on the surface of the substrate loo. The seed layer 11 material may be copper or titanium (Ti). Titanium/crane (Ti/W) 3 to or a suitable metal thereof, and the seed layer HQ is intended to provide electroforming (electofoming)/electroplating (electr〇plati) 1279556 i for subsequent fabrication of microelastic contactors In this embodiment, the 'extraction_technology deposits about 5 〇〇 () Å copper film compared to = = = strip plating, no Plating is also feasible technology. Pregnancy Fit ^ 'coated on the substrate (10) - photoresist (PhQto-Resist, ΞΪΓ-Ξ ΓΪ ΓΪ ΓΪ 5 (deVel〇pment) 12Q 'the thickness (four) micron is better, and after this implementation, such as θ Ί f resistance The portion of the layer 12G is formed above the contact pad 1G2. The layer 120 of the L ^ nn galvanic / non-electrical ore is not covered by the patterned photoresist - all of the sacred "n yan yan - the same as the patterned photoresist layer 12G The thickness of the contactor material on the selective side of the Na, I, after, the clothing of the 4 inch〗 〖In the case of Benbe yoke with copper (Cu) or copper Γ ^ ΐ 卜 5 5 ' will be patterned The photoresist layer (10) is removed. Then, as shown in the figure
Si 機f雜的需求，崎/錄/⑹合金或鎳 f子Λ二金屬層140去除、使表面保持與基板刚良 第-S犧:ίΐίπ述:二1-3:1—7的製程’形成如圖1-8，在 2〇〇。最德，Μ 已'有第二金屬層140之微彈性接觸器 第二〇尸展μΓ弟一8圖ί第卜9圖’因第一金屬犧牲層130與 j·，蜀a 之間具有選擇性姓刻的特性赘可挑選適當的 並將未與賺纖牲層130， 性接觸器·。當然，麟該11咖μ釋放微彈 _子層110的這個步驟為可選擇口 ’上^，上形 复、.=-=犧牲層13G、第二金屬層刚是制何種形成技術， 如本貫施例以靖/電鑛/無電料 110,若以麟的方式就無需上述種子層11〇。成j而、種子層 10 1279556 -值#注意的是，本發明之微彈性接觸器2〇〇主要 :同製程（即上述圖卜3〜卜7的製程）而形成。請參閱「第γ9=相 以本實施例而言，本發明之製造方法所製成的微彈 」哭 200以微觀觀之，係由兩個垂直支撐體21〇、兩個水平 s = -微接觸結構230所構成。上述兩垂直支撐體21{)巾，^―#吉 支撐體210係與基板100上之接觸墊1〇2電性連接，另二吉^ 撐體210則與基板100機慨連接（即與基板1〇 j 提？足夠的機械強度。此外，上述兩水平樑體⑽*目互; 且取底部的水平樑體220係與垂直支摟體21〇連接，而微 > 頂部的水平樑體220連接，且微接觸結構230與ί f支撑體210位於這些水平樑體22〇的兩相對端（即相里。 相互堆疊辭段來㈣整體厚度，進_整 712 0 偏- 數接觸力及偏轉距離等能力。舉 例而§，係可猎由不同的厚度設計，使得水平樑體22〇 $支撐體210的部分能具有較強的機械強 «^20 1« 23〇 由於本發明之微彈性接觸器2〇〇因可 丁 »，形去錢微彈性接觸器結構的型9 =紅 無的=樣。此外’上述將多個水平:體目二= 4又，可採用階梯狀的排列方十r (nucro-sten · + 式（即利用微階梯製造技術 2〜4皆有揭霖）。=:加以實現（圖卜9、圖 l 卜，本叙明之微彈性接觸哭200在制1 中垂直支撐體210的數.須舰（- 20◦在衣物，其 體挪其數量同樣無須侷限（即兩固以上），而多個水平樑 (如機械财、雜力或接觸力等）倾設^可依據不同的而求 更可口 =4圖’本發明之微彈性接觸器200在製作時， 更了在上述取底部之水平樑體220上形成—停止件（st〇醇） 1279556 f 240，此停止件240與垂直支撐體210位於同一側，並位於垂直支 撐體210與微接觸結構230之間，用以控制微彈性接觸器2〇〇的 變形量。較詳細的說，假設當微接觸結構230接觸待測體之接觸 墊（圖未示出）時，水平樑體22〇會產生一朝向基板丨⑽的下壓力 C係ΊΓ透過彳τ止件240擋止於基板1〇〇的作動，以避免微彈性 接觸為200因過度形變而損毀。當然，熟悉該項技術者應知，本 發明之停止件240的設計，並無須如第4圖需在水平摔^22〇 多^個的情況下施行，換言之，水平樑體22G的數量僅^單一個 的6況下亦可單獨實施。 …明參閱第5圖，基於本發明的製造方法，更可製作出一 性接觸器200 ’此微彈性接觸器200在圖式中係以多個 =所構成。其中，多個水平支樓體211相互二:接： 水平支撐體211係與基板⑽上的接輕丨 ΐί 中，最底部的水平樑體_與最頂部的ΐ 連ί且結構23G係與最頂部的水平樑體220 =而言，該些水信體 以實現）。i得方式（即利用微階梯製造技術加 的部分係為庫力&接觸器2〇0與基板⑽連結 後的厚产^ 度域’透過該些水平支樓體211堆疊 可靡·咖轉性力之外，更 上开悉該項技術應知，同樣可在最底部的水平_ 220 形變而損毁。 ；㈤以避免微彈性接觸器200因過度 可保寬l本：丄製作心,=成的=彈性接觸器，除 、、佑小間距（Pitch)及提升並排測試 1279556 制之彈_、_力、偏轉距 所製成之微彈性接觸本作方法 件。如對單或多曰私々丄用f夕用途，包括各種接觸元 接觸墊作短暫的:，其上 些結合(如印刷電路板、機構零二土系統=件作一 或如這微雜翻||可#^ > ⑽試組件’ 件。換言之，意㈣裝上的彈菁接觸元 可運用在半導體職的^：m成之微彈性接觸器係 元件。當然，以本發明之製作==後巧品的電連接彈性 限對晶圓或晶粒進行測試 衣/之^1彈性接觸器並不揭 子元件或其他電子產品進行=如.印刷電路板⑽)等電 雖然本發明已以較佳實施例揭露如上 發明，任何熟習此技藝者，在不脫^^非用以限定本 視後附之申請專利翻所界定日此本翻之髓範圍當 1279556 •【.圖式簡單說明】 . . 第1-1〜1-9圖，係為本發明之微彈性接觸器一較佳實施例的 製作流程圖。 第2圖〜第6圖，係為以本發明之製作方法所製成之微彈性 接觸器的其他較佳實施例圖。 【主要元件符號說明】 100 ·· · • ••基板 102 ·· · •··接觸墊 104 ·· · •.·接觸墊 106 ·· · •••内層線路 110 ·· · •··種子層 120 ·· · • ••圖案化光阻層 130 ·· · •••第一金屬犧牲層 140 ·· · •··弟一金屬層 200 ·· · •••微彈性接觸器 210 ·· · •••垂直支撐體 211 ·· · •••水平支撐體 220 ·· · •••水平樑體 230 ·· · •••微接觸結構 240 ·· · •··停止件 14'Si machine f miscellaneous demand, Saki / recorded / (6) alloy or nickel f sub-metal layer 140 removed, the surface is maintained and the substrate is just the first -S sacrifice: ίΐί π: two 1-3:1-7 process ' Formed as shown in Figure 1-8, at 2〇〇. The most German, Μ has 'the second metal layer 140 micro-elastic contactor second corpse exhibition μ Γ brother one 8 figure ί 卜 9 picture 'Because of the choice between the first metal sacrificial layer 130 and j·, 蜀a The characteristics of the sexual surname can be selected and will not be associated with the earning layer 130. Of course, this step of releasing the micro-elastic _ sub-layer 110 is the selection of the forming technique, such as the upper surface, the upper shape, the .=-= sacrificial layer 13G, and the second metal layer. In this embodiment, the Jing/Electrical/Electrical-free material 110 is used, and the seed layer 11〇 is not required in the form of Lin. The seed layer 10 1279556 - value # Note that the micro-elastic contactor 2 of the present invention is mainly formed by the same process (i.e., the process of the above-mentioned Figure 3 to Table 7). Please refer to "the γ9=phase, in the present embodiment, the micro-elastic made by the manufacturing method of the present invention" cry 200, which is microscopically viewed by two vertical supports 21, two levels s = -micro The contact structure 230 is constructed. The two vertical support bodies 21{), the support 210 are electrically connected to the contact pads 1〇2 on the substrate 100, and the other supports 210 are mechanically connected to the substrate 100 (ie, the substrate) 1〇j mentions sufficient mechanical strength. In addition, the above two horizontal beam bodies (10)* mesh with each other; and the bottom horizontal beam body 220 is connected to the vertical support body 21〇, and the micro> top horizontal beam body 220 Connected, and the micro-contact structure 230 and the ί f support 210 are located at opposite ends of the horizontal beam body 22〇 (ie, in the phase. The stacks are stacked one on another (4) the overall thickness, and the 712 0 partial-number contact force and deflection Distance and other capabilities. For example, §, can be designed from different thicknesses, so that the horizontal beam body 22 支撑 $ part of the support body 210 can have a strong mechanical strength «^20 1 « 23 〇 due to the microelastic contact of the present invention 2〇〇因可丁», the shape of the micro-elastic contactor structure type 9 = red no = sample. In addition, the above will be multiple levels: body 2 = 4 again, can be arranged in a stepped manner r (nucro-sten · + (that is, using the micro-step manufacturing technology 2 to 4 have Jielin). =: to achieve (Figure 2, Figure lb, the microelastic contact crying 200 of the present invention is the number of vertical support bodies 210 in the system 1. The ship is required to be loaded (the number of the body is also not limited (ie, two solids or more), and multiple The horizontal beam (such as mechanical money, miscellaneous force or contact force, etc.) can be more delicious according to different ones. 4Fig. 'The micro-elastic contactor 200 of the present invention is made at the above-mentioned horizontal beam at the bottom. Forming a stop member (st〇 alcohol) 1279556 f 240 on the body 220, the stop member 240 is located on the same side as the vertical support body 210, and is located between the vertical support body 210 and the micro-contact structure 230 for controlling the micro-elastic contactor In more detail, it is assumed that when the microcontact structure 230 contacts the contact pad of the object to be tested (not shown), the horizontal beam 22 will generate a downforce C system toward the substrate crucible (10). The operation of the substrate 1 is blocked by the 彳 stopper 240 to prevent the microelastic contact from being damaged due to excessive deformation. Of course, those skilled in the art should understand the design of the stop 240 of the present invention. It is not necessary to have a level of ^22〇^ in the case of Figure 4. Executing, in other words, the number of horizontal beam bodies 22G can be implemented separately in a single case. ... Referring to Figure 5, based on the manufacturing method of the present invention, a one-dimensional contactor 200 can be fabricated. The contactor 200 is composed of a plurality of = in the figure, wherein the plurality of horizontal support bodies 211 are connected to each other: the horizontal support body 211 is connected to the substrate (10), and the bottom horizontal beam The body_and the topmost ί ί and the structure 23G and the topmost horizontal beam body 220 =, the water bodies are implemented.) i way (ie using the micro-step manufacturing technology plus part of the library The thickness & the contact area between the contactor 2〇0 and the substrate (10) is superimposed through the horizontal support body 211, and the technical knowledge should be known. Can be deformed at the bottom level _ 220 deformation. (5) to avoid the micro-elastic contactor 200 due to excessive maintenance of the book: 丄 making the heart, = into = elastic contactor, except,, small pitch (Pitch) and lifting side by side test 1279556 made of _, _ force The microelastic contact made by the deflection distance is used as a method member. For example, for single or multiple private use, including various contact element contact pads for a short time: the combination of the above (such as printed circuit board, mechanism zero two soil system = one or one such as || 可#^ > (10) Test component 'piece. In other words, the (4) mounted elastic cyanine contact element can be used in the micro-elastic contactor element of the semiconductor job: m, of course, with the invention = After the electrical connection of the product, the elastic limit is applied to the wafer or the die. The elastic contactor does not expose the component or other electronic products. For example, the printed circuit board (10) is isoelectric. The preferred embodiment discloses the above invention, and any person skilled in the art will not be able to limit the scope of the patent application after the definition of the patent application, and the scope of the application is 1279556. Figures 1-1 to 1-9 are flowcharts showing the fabrication of a preferred embodiment of the microelastic contactor of the present invention. Fig. 2 to Fig. 6 are views showing other preferred embodiments of the microelastic contactor produced by the manufacturing method of the present invention. [Description of main component symbols] 100 ··· • ••Substrate 102 ······Contact pad 104 ·· ·•··Contact pad 106 ·· ·••• Inner layer 110 ······Seed layer 120 ·· · • •• Patterned photoresist layer 130 ···•••1st metal sacrificial layer 140 ·································· •••Vertical support body 211 ·· ·•••Horizontal support body 220 ·· ·•••Horizontal beam body 230 ···•••Micro-contact structure 240 ······ Stopper 14'