-1270288 < • * 九、發明說明： 發明所屬之技術領域 本發明係關於化學機械研磨，特別是關於使用於化學 機械研磨器具之扣持環。 先前技術 隨著半導體積體電路的微型化及多層交互連接的需 求出現’於某些製造步驟時，使晶圓表面平坦化（pi anarize) 戈選擇性地移除形成於晶圓表面的導電層，即有其需要。 _為滿足此需求，近來，化學機械研磨（CMP)即被廣泛使用 於半導體積體電路的製造上。一般而言，於化學機械研磨 (CMP)程序中，晶圓表面的平坦化或選擇性地移除晶圓表 面的導電層’係以散佈拋光液於拋光墊 (polishing pad)上，使晶圓表面與拋光墊接觸並且施加壓 力於晶圓上而使晶圓與拋光墊互相之間朝對方移動。 圖1代表例示化學機械研磨（CMP)器具之晶圓研磨 鲁程序之橫切圖圖示。為詳細敘述，在將拋光墊12與壓板 10連接後’拋光液14會被散佈在拋光墊12之上。之後， 晶圓16會與塗佈（coated)拋光液14之拋光墊12相接觸， 且壓板10會進行旋轉或繞行運轉的動作。之後，接觸拋光 墊12的晶圓表面的平坦化工作，即由介於晶圓16與拋光 墊12之間的摩擦所完成。於此，於進行化學機械研磨時， 轉動晶圓16並同時於其上施加研磨壓力，並且亦於化學機 械研磨程序開始前與開始後驅動晶圓16之組件18，被稱 為「研磨頭」或「驅動器」。本文中自此之後，組件18將 ‘1279288. 1 t 被指稱為「驅動器」。驅動器18通常包括一自驅動軸20 接受動能及提供空間以固定（f iX)其他驅動組件之驅動器 底座（carrier base)22、一種壓力施加方法24例如當以接 觸晶圓16表面之方式而轉動晶圓16時，以薄板（plate) 或囊袋（bladder)施加研磨壓力於晶圓16之上、及一為防 止晶圓16自驅動器18下方滑出而支撐晶圓16的側邊表面 之扣持環26。於進行化學機械研磨時，扣持環26的功能 ^除了能防止晶圓滑出以外，尚能在晶圓16邊緣附近以 •施加預設的壓力於拋光墊12上的方式，導致一致性的變形 (uniform deformation)，因此就能得到較佳的研磨一致 性。因此，在扣持環26及塗佈拋光液14之拋光墊12之間 亦會產生磨擦’並且會在扣持環26的底部表面產生擦蝕 (abrasion)現象。 圖2疋根據先前技藝（prior art)之的例子。此圖 例不一 το全由單一物體（b〇dy)構成之扣持環3〇。為了將扣 ⑩持環30固定於驅動器底座（未顯示）之上，通常會使用到螺 絲。為此，於扣持環30的上部表面會形成螺絲孔32。扣 持環30的尺寸可由内侧直徑，即寬度w、厚度h來定義。 扣持％ 30的内側直徑係根據要被研磨的晶圓直徑而定。寬 度W的範圍係10咖至40mm，而厚度h的範圍係10mm至 30mm。扣持壤30通常係由顯示出低磨損率及良好耐用性的 塑膠材料所I成’例如聚苯硫醚（PPS) (p〇iyphenylene sulfide)或來醚_ 酉同（peek) (p〇iyetheretherket〇ne)。 扣持％的替換大多是因為研磨一致性的退化 J279288 (deterioration)或因為扣持環底部表面的磨損所致之扣 住晶圓的能力（wafer retaining capability)下降。當底 部表面的磨損達到大約500微米（5〇〇 後，研磨一致性 會出現退化的傾向並且扣持環大約於此時就會被替換。因 此，考慮到扣持環的厚度，僅有極小一部分被使用，並導 致不必要的資源浪費及環境污染。 一圖3是另一根據先前技藝所製扣持環的範例。此圖例 =-由二部分構成之扣持環4G;其中一部分係連接於驅動 了底座（未顯不）之上部圓環（upper ri叩⑽，另一部分則 係於進行化學機械研磨時’經由支撐晶圓之侧邊表面，實 „晶圓(未顯示)之下部圓環(lower r_)60。於上 上^衣別之上’會形成為將扣持環40固定於驅動器底座 =須之螺絲孔52。於下部圓環6〇的底部表面上，會 犯成:進行化學機械研磨時，為促進拋 62。上部圓環50通常由能夠顯干屮以凹槽 作為機械加工的能力（machi h^出良好的抗腐姓能力及可 所组成，而下部圓環60二的金屬’例如不錄鋼 驗_ (咖）之__^ T㈣（PPS)或聚 環5〇與下部疋飾了上部圓 連接在—起之橫切過圖3^；mp〇xy)之連接材料 切圖。下部圓環60的厚声/，40中之AA，部位之橫 下部圓環60的磨損達到：二大約為5随。本例中，當 f會被更換，卜考慮到 部分被利用到。 』下4圓裱60的厚度，只有一小 -1279288 f 氟 由二部分（上部圓環50與下部圓環60)組成之扣持 環40與圖2之由單一物體組成之扣持環30相比較之不 同，係當下部圓環60磨損之後，如圖5所示之上部圓環 50在與下部圓環60分離（detaching)之後，是可重複使用 的。將上部圓環50與下部圓環60分離的方法之一，是將 扣持環40加熱到一定的高溫（例如介於攝氏200度至300 度），而使得結合此二圓環之黏著材料融化(melted)或熱分 * 解（thermally decomposed)。當加熱於扣持環40時，如果 肇組成上部圓環50的材料之熱擴張係數（thermal expansion coefficient)與組成下部圓環60的材料之熱擴張係數不 同，於圖6中以虛線例示之加熱後之上部圓環50’與下部 圓環60’之直徑就會變得不同，儘管於室溫下，上部圓環 50與下部圓環60之直徑是相同的。為分離上部圓環50與 下部圓環60而加熱所導致之尺寸差異，可能會導致此二圓 環之形狀扭曲（distortion)。特別是可重複使用之上部圓 • 環50的此一扭曲可能會使重製（refurbished)之扣持環之 尺寸準確性（dimensional accuracy)品質降低，並因此導 致研磨一致性的退化。 發明内容 技術問題 如前所述，根據先前技藝所製之扣持環消耗太多材料 而於化學機械研磨程序中，僅有該圓環的一小部分被利用 後即丟棄。 技術解決 -1279288 3 « 、為解決上述問題’本發明之目標即是提供—能夠減少 不必要丢棄的部位’並且能夠以消除因丢棄及回收再利用 部位之，擴張係數的不同所致之扭曲，而增進研磨一致性 的扣持環。 根據本發明，為達成上述目標，供化學機械研磨哭且 使用之扣持環包括複數於進行化學機械研磨時，為 圓W出而支撐晶圓的侧邊表面之扣持組件，及一曰曰 持組件所連接之大體上為環狀之基座環。 及獲數扣 圖式簡單說明 上述之本發明之目標及優點當與所附圖* 將會更清楚地被瞭解如下： 考里 圖1代表例示化學機械研磨程序之橫切圖圖示； 圖2代表一根據先前技藝所製、， 圖； 付衣的乾例的透視-1270288 < ** ** ** ** ** ** ** ** ** ** ** ** ** ** ** ** ** ** ** 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The prior art has appeared in the miniaturization of semiconductor integrated circuits and the need for multiple layers of interconnections. In some manufacturing steps, the wafer surface is flattened to selectively remove the conductive layer formed on the surface of the wafer. , that is, there is a need. In order to meet this demand, chemical mechanical polishing (CMP) has recently been widely used in the manufacture of semiconductor integrated circuits. In general, in a chemical mechanical polishing (CMP) process, the planarization of the wafer surface or the selective removal of the conductive layer on the surface of the wafer is performed by spreading the polishing liquid onto the polishing pad to make the wafer The surface is in contact with the polishing pad and applies pressure to the wafer to move the wafer and the polishing pad toward each other. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a wafer polishing process for a chemical mechanical polishing (CMP) apparatus. For the detailed description, after the polishing pad 12 is attached to the platen 10, the polishing liquid 14 is spread over the polishing pad 12. Thereafter, the wafer 16 is brought into contact with the polishing pad 12 coated with the polishing liquid 14, and the platen 10 is rotated or bypassed. Thereafter, the planarization of the wafer surface contacting the polishing pad 12 is accomplished by friction between the wafer 16 and the polishing pad 12. Here, in the chemical mechanical polishing, the wafer 16 is rotated while applying the polishing pressure thereon, and the assembly 18 of the wafer 16 is also driven before and after the start of the chemical mechanical polishing process, which is called a "grinding head". Or "drive". Since then, component 18 has referred to ‘1279288. 1 t as the “driver”. The driver 18 typically includes a driver base 22 that receives kinetic energy from the drive shaft 20 and provides space to secure (f iX) other drive components. A pressure application method 24, for example, rotates the crystal in contact with the surface of the wafer 16. At 16 o'clock, a polishing pressure is applied to the wafer 16 by a plate or bladder, and a support for supporting the side surface of the wafer 16 to prevent the wafer 16 from slipping out of the driver 18. Ring 26. In the case of chemical mechanical polishing, the function of the holding ring 26 can prevent the wafer from slipping out, and can also apply a predetermined pressure to the polishing pad 12 near the edge of the wafer 16, resulting in uniform deformation. (uniform deformation), so that better grinding consistency can be obtained. Therefore, friction "also occurs between the retaining ring 26 and the polishing pad 12 to which the polishing liquid 14 is applied and an abrasion phenomenon is generated on the bottom surface of the holding ring 26. Figure 2 is an example based on prior art. This illustration is different. το is a holding ring consisting of a single object (b〇dy). In order to secure the buckle 10 retaining ring 30 to the drive base (not shown), a screw is typically used. To this end, a screw hole 32 is formed in the upper surface of the retaining ring 30. The size of the retaining ring 30 can be defined by the inner diameter, i.e., the width w, thickness h. The inner diameter of the holding % 30 depends on the diameter of the wafer to be polished. The width W ranges from 10 to 40 mm, and the thickness h ranges from 10 mm to 30 mm. Buckle soil 30 is usually made of a plastic material that exhibits low wear rate and good durability, such as polyphenylene sulfide (PPS) or pei (peek) (p〇iyetheretherket) 〇ne). The replacement of the % hold is mostly due to degradation of the grinding consistency J279288 (deterioration) or a decrease in the wafer retaining capability due to wear of the bottom surface of the buckle ring. When the wear of the bottom surface reaches about 500 microns (5 〇〇, the grinding consistency tends to degenerate and the retaining ring is replaced at about this time. Therefore, considering the thickness of the retaining ring, only a very small part It is used and causes unnecessary waste of resources and environmental pollution. Figure 3 is another example of a buckle ring made according to the prior art. This illustration = a holding ring 4G consisting of two parts; Drive the upper ring of the base (not shown) (upper ri叩 (10), and the other part is for chemical mechanical polishing 'via the side surface of the supporting wafer, the actual ring below the wafer (not shown) (lower r_) 60. Above the upper clothes, it will be formed to fix the holding ring 40 to the driver base = the screw hole 52. On the bottom surface of the lower ring 6〇, it will be made: In chemical mechanical polishing, in order to promote the throwing 62. The upper ring 50 is usually composed of a capable ability to dry out and use a groove as a mechanical processing (machi h^ has a good anti-corruption ability and can be composed, and the lower ring 60 2 Metal 'for example, does not record steel _ (C) __^ T (four) (PPS) or poly ring 5 〇 with the lower 疋 decorated with the upper circle connected in the cross-cut through the Figure 3 ^; mp 〇 xy) connection material cut. The lower ring 60 Thick sound /, AA in 40, the wear of the lower horizontal ring 60 of the part reaches: two is about 5. In this case, when f will be replaced, the part considering the use is taken. 』 下四圆裱60 The thickness is only a small -1279288 f. The holding ring 40 composed of two parts (the upper ring 50 and the lower ring 60) is different from the holding ring 30 composed of a single object in Fig. 2, and is now After the ring 60 is worn, the upper ring 50 is reusable after being detached from the lower ring 60 as shown in Fig. 5. One of the methods of separating the upper ring 50 from the lower ring 60 Is to heat the holding ring 40 to a certain high temperature (for example, between 200 and 300 degrees Celsius), so that the adhesive material combined with the two rings is melted or thermally decomposed. When the ring 40 is held, if the thermal expansion coefficient of the material constituting the upper ring 50 is The material of the lower ring 60 has a different thermal expansion coefficient, and the diameter of the upper ring 50' and the lower ring 60' after heating is exemplified by a broken line in Fig. 6, although at room temperature, the upper portion The diameter of the ring 50 and the lower ring 60 are the same. The difference in size caused by the heating of the upper ring 50 and the lower ring 60 may cause the shape of the two rings to be distorted. Reuse of the upper circle • This distortion of the ring 50 may degrade the dimensional accuracy of the refurbished buckle ring and thus cause degradation of the grinding consistency. Disclosure of Invention Technical Problem As described above, the retaining ring manufactured according to the prior art consumes too much material. In the chemical mechanical polishing process, only a small portion of the ring is discarded after being utilized. Technical Solution -1279288 3 « In order to solve the above problems, the object of the present invention is to provide a portion capable of reducing unnecessary disposal and to eliminate the difference in expansion coefficient due to disposal and recycling of the reused portion. A buckle that twists and enhances the consistency of the grinding. According to the present invention, in order to achieve the above object, the holding ring for chemical mechanical polishing and crying includes a plurality of holding members for supporting the side surface of the wafer for the round W out when performing chemical mechanical polishing, and A substantially annular pedestal ring to which the assembly is attached. BRIEF DESCRIPTION OF THE DRAWINGS The objects and advantages of the present invention will be more clearly understood from the following description: FIG. 1 is a cross-sectional illustration of a exemplified chemical mechanical polishing procedure; Representing a system based on prior art, Figure; perspective of a dry case
圖3至圖6係例示了組成扣持環之上部圓環 辰的另-根據先前技藝所製之扣持環的範:、刊 圖9至圖u係例示了扣持參且件的範 类 中複數扣持組件會構成根據本發明所製叙=圖’其 横切=圖一 _圖14代表根據本發明另—實施例所製之扣持環之透 ‘12792883 to FIG. 6 illustrate another embodiment of a buckle ring formed according to the prior art of the ring ring of the upper portion of the buckle ring. FIG. 9 to FIG. 9 illustrate a model for holding the joint member. The middle plurality of fastening components will constitute a drawing according to the present invention. FIG. 14 is a cross-cutting FIG. 1 and FIG. 14 is a view showing a holding ring made in accordance with another embodiment of the present invention.
• I 圖15至圖20係例示了形成於扣持環及基座環上之突 出（protruded)及刻# (engraved)結構之透視圖； 圖21至圖24係例示了根據扣持組件總數目之扣持組 件形狀之範例，並且例示了在二個相鄰的扣持組件之間的 裂縫方向之根據本發明所製之扣持環之底視圖（b〇ttom view)； 圖25及圖26係例示了形成於基座環上之凹槽之範例 之透視圖。 ®實施方式 於本文中自此之後，根據本發明之用於化學機械研磨 之扣持環將以參考附圖之方式為詳細的敘述。然而請注 意，本發明之實施例之提供將會以通透的及完整的方式揭 露’並且將會完整傳達本發明之範疇於熟習此技藝 (ski 1 led in the art)之人。因此，於這些圖示中，為求 清楚明瞭起見，零組件（members)之相關的尺寸及形狀可能 馨會被誇大；並且相同的參考符號指射相同的零組件。 圖7及圖8例示了根據本發明某一實施例所製之扣持 環90。扣持環9〇包括複數扣持組件1〇()及一該複數扣持 組件1GQ所連接之大體上為環狀之基座環2〇〇。扣持組件 100扮演一於進行化學機械研磨時，為防止晶圓（未顯示） 滑出而支樓晶圓的側邊表面的角色。如於圖8 (圖7之鏡 面反射圖）中所示，該扣持組件100所連接之基座環200 於其頂部表面上具有螺絲孔210，因此驅動器底座（未顯 示）能以螺絲將扣持環90固定。扣持組件1〇〇扮演的另一 1279288· 1 i 角色疋於進行化本機械研磨時，以推壓（叩6%1叫）抛光墊 (未顯不）的方式，對於在晶圓邊緣附近之拋光墊為一致 性的變形。 圖9至圖11係例示了扣持組件的範例之透視圖，其 中複數扣持組件會構成根據本發明所製成之扣持環。首 、先，請參考圖9，扣持組件100包括一彎曲的内侧表面即 直徑為Ri之圓弧及一彎曲的外侧表面即直徑為R〇之圓 弧。此處，内侧表面即直徑為Ri之圓弧於進行化學機械研 磨日^，將會接觸並支撐晶圓表面。因此，較佳的作法是， 直徑Ri比受研磨之晶圓直徑大上〇 5mm至2mmc>R〇可以比 直徑Ri大上l〇mm至4〇mm。扣持組件1〇〇的厚度t可以是 在〇· 5mm至5mm的範圍内。第1〇圖例示了扣持組件1〇2 的另一範例。雖然如上述範例之扣持組件1〇2的内侧表面 被定義為直徑為Ri之圓弧，但是扣持組件1〇2的外侧表面 可能包括平® (例如P1及P2)❿不是被定義為圓弧之曲 _線表面。圖11例示了扣持組件103的另一範例。於此，扣 持組件103的内侧表面被定義為平面P3且其外側表面被定 義為另一平面P4,此亦是另一扣持環的内側表面及外側表 面均非被定義為圓弧之範例。以此一平坦的内側表面（例 如P3)的例子而言，較佳的作法是由扣持環（未顯示）的 中央C至扣持環103的二邊端點之二條線（以虛線顯示） 所構成之角度0，小於20度。亦即，當一扣持環包括不少 於18個扣持組件時，該扣持組件之内側表面即可能由例如 P3之平面所組成。 11 1279288 相較於先前技藝所使用之圓環形式，上述範例之級件 形式是較小的，也因此較容易製造。特別是，當―圓環的 厚=須是薄形的之時（例如小於2随的厚度），製造這種 圓環就會變得困難。儘管這《環能成功地被製造出來， 因為厚度的關係，會變得容易破裂。與圓環相反地，於製 f薄形組件時較少遭遇到問題。考量到在磨損達大約500 微米（500 #111)4扣持環就要被替換掉，部件被丟棄的情形 就能以僅以連接於基座環之薄形（例如小於2咖的厚度） 扣持組件組成扣持環，秘使用後僅吾棄磨損的扣持技件 的方法被減少。 使用，形扣持組件的另—優點是，它許可扣持環採用 因為具有兩度可壓縮性而擁有良好抗磨損能力卻又能輕易 地變形的材料，因為於進行化學機械研磨時，薄形扣持组 件在壓力下的厚度·是小的。為了以參相㈣方式來 解釋此點，如於圖12中所示，於壓力P之下之由具有高度 可壓縮性的材料所製叙扣持組件12G，㈣成往所施壓 力P平行及垂直的方向變形之扣持組件12G，。當扣持組 :120的厚度是厚的之時，扣持組件120的厚度減少及側 ^膨脹的程度就會是大的，並且於進行化學機械研磨 時’會導致扣持住晶圓上的問題。另一方面，如於圖13 中所不’當扣持組件13〇的厚度是薄的之時，由廢力P所 =之扣持組件13G的厚度減少及侧邊表面膨脹的程度就 曰疋小的，這樣就會有助於扣持住晶圓。 扣持組件可由顯示出良好抗磨損能力及不具活性 12 *1279288 (inertness)的塑膠所組成，例如聚苯硫醚（ppS)、聚醚醚 酮（PEEK )、多元脂（p〇lyester)、聚醯胺醯亞胺 (polyamide-imide)、聚氨脂（p〇iyUrethane)或類似之物。 扣持組件所連接之基座環可以由抗腐蝕金屬例如不 鏽鋼塑膠材料例如聚苯硫醚（pps)、或是陶瓷材料如礬土 (alumina)所組成。基座環可由如圖7之基座環2〇〇之單一 物體所構成。複數圓環連接在一起個可以形成如圖(例 議示根據本發明另一實施例所製成之扣持環9〇 )所示之基座 •環。於此，基座環206包括一下部基座環2〇2及一上$基 座環204。扣持組件10Q所連接之上部基座環若是由 例如PPS的塑膠材料所形成是較佳的，因為它會接觸到抛 光液。而連接至驅動器底座之下部基㈣202，若是由例 如不鏽鋼之金屬所形成是較佳的。本文中自此之後，為长 圖示精簡起見，由單-物體所構成之基座環（如於圖7中 所示）將會以圖示例示之。 # 為將扣持組件與基座環連接，例如環氧樹脂 (一、聚石夕氧(silicone)、或石徵(pa• I Figures 15 to 20 illustrate perspective views of the protruded and engraved structures formed on the retaining ring and the susceptor ring; Figures 21 through 24 illustrate the total number of latching components. An example of the shape of the fastening component, and illustrating a bottom view of the buckle ring made in accordance with the present invention in the direction of the crack between two adjacent fastening components; Figure 25 and Figure 26 A perspective view of an example of a groove formed on a susceptor ring is illustrated. ® Embodiments Hereafter, the retaining ring for chemical mechanical polishing according to the present invention will be described in detail with reference to the accompanying drawings. However, it is noted that the provision of the embodiments of the present invention will be disclosed in a thorough and complete manner and will fully convey the scope of the present invention to those skilled in the art. Therefore, in these figures, the relative size and shape of the members may be exaggerated for clarity and clarity; and the same reference symbols refer to the same components. Figures 7 and 8 illustrate a snap ring 90 constructed in accordance with an embodiment of the present invention. The retaining ring 9A includes a plurality of latching assemblies 1A and a substantially annular base ring 2A to which the plurality of latching assemblies 1GQ are coupled. The latching assembly 100 acts as a side surface for the wafer to prevent wafers (not shown) from slipping out during chemical mechanical polishing. As shown in FIG. 8 (the specular reflection view of FIG. 7), the base ring 200 to which the fastening component 100 is attached has a screw hole 210 on the top surface thereof, so that the driver base (not shown) can be buckled with a screw. The ring 90 is fixed. The other 1279288·1 i role played by the holding component 1〇〇 is used to push the polishing pad (not shown) in the vicinity of the edge of the wafer. The polishing pad is a consistent deformation. Figures 9 through 11 illustrate perspective views of an example of a clasp assembly in which a plurality of clasp assemblies form a clasp loop made in accordance with the present invention. First, first, referring to Fig. 9, the fastening assembly 100 includes a curved inner side surface, i.e., a circular arc having a diameter Ri and a curved outer side surface, i.e., a circular arc having a diameter of R. Here, the inner surface, i.e., the arc of diameter Ri, is subjected to a chemical mechanical polishing day to contact and support the wafer surface. Therefore, it is preferable that the diameter Ri is larger than the diameter of the wafer to be polished by 5 mm to 2 mmc > R 〇 can be larger than the diameter Ri by 10 〇 mm to 4 〇 mm. The thickness t of the fastening member 1〇〇 may be in the range of 〇·5 mm to 5 mm. The first figure illustrates another example of the holding component 1〇2. Although the inner side surface of the holding member 1〇2 as the above-described example is defined as a circular arc having a diameter Ri, the outer side surface of the holding assembly 1〇2 may include a flat® (for example, P1 and P2), which is not defined as a circle. The curve of the arc _ line surface. FIG. 11 illustrates another example of the latching assembly 103. Here, the inner side surface of the holding component 103 is defined as a plane P3 and the outer side surface thereof is defined as another plane P4, which is also an example in which the inner side surface and the outer side surface of the other holding ring are not defined as arcs. . With the example of a flat inner side surface (e.g., P3), it is preferred to have two lines from the center C of the retaining ring (not shown) to the two end points of the retaining ring 103 (shown in dashed lines). The angle 0 formed is less than 20 degrees. That is, when a holding ring includes not less than 18 holding members, the inner side surface of the holding member may be composed of, for example, a plane of P3. 11 1279288 The form of the above-described example is smaller in size than the ring form used in the prior art, and is therefore easier to manufacture. In particular, when the thickness of the ring = must be thin (e.g., less than 2), it becomes difficult to manufacture such a ring. Although this "ring can be successfully manufactured, it will become easily broken due to the thickness. Contrary to the ring, fewer problems are encountered in making f-shaped components. It is considered that the buckle ring of about 500 micrometers (500 #111) will be replaced, and the parts will be discarded in a thin shape (for example, less than 2 coffee thickness) attached to the base ring. Holding the components to form the buckle ring, only the method of discarding the worn buckle technology after the use of the secret is reduced. Another advantage of the use of the snap-on assembly is that it allows the retaining ring to be of a material that has good wear resistance but is easily deformable because of its two-degree compressibility, because it is thin for chemical mechanical polishing. The thickness of the fastening component under pressure is small. In order to explain this in the phase (4) manner, as shown in FIG. 12, the holding component 12G is made of a material having high compressibility under the pressure P, and (4) the applied pressure P is parallel and The latching assembly 12G is deformed in a vertical direction. When the thickness of the holding group: 120 is thick, the thickness of the holding component 120 is reduced and the degree of side expansion is large, and when performing chemical mechanical polishing, it will cause the wafer to be held on the wafer. problem. On the other hand, as shown in Fig. 13, when the thickness of the holding member 13A is thin, the thickness of the holding member 13G by the waste force P is reduced and the degree of expansion of the side surface is 曰疋Small, this will help hold the wafer. The fastening component can be composed of plastics that exhibit good abrasion resistance and are not active 12 *1279288 (inertness), such as polyphenylene sulfide (ppS), polyetheretherketone (PEEK), polyester (p〇lyester), poly Polyamide-imide, p〇iyUrethane or the like. The susceptor ring to which the fastening component is attached may be composed of a corrosion resistant metal such as a stainless steel plastic material such as polyphenylene sulfide (pps) or a ceramic material such as alumina. The susceptor ring can be constructed of a single object such as the susceptor ring 2 of Figure 7. The plurality of rings are joined together to form a susceptor/ring as shown in the figure (for example, a retaining ring 9 制成 made in accordance with another embodiment of the present invention). Here, the susceptor ring 206 includes a lower base ring 2〇2 and an upper base ring 204. It is preferable that the upper base ring to which the holding member 10Q is attached is formed of a plastic material such as PPS because it is in contact with the polishing liquid. It is preferred to connect to the base (4) 202 below the base of the drive, if formed of a metal such as stainless steel. Since then, for the sake of simplification of the long illustration, the susceptor ring consisting of a single-object (as shown in Figure 7) will be illustrated by way of example. # Connect the holding component to the pedestal ring, such as epoxy resin (1, polysilicon, or stone sign)
料可以被使用。為回收再利用基座環，黏著材料能在高溫 下（例如介於攝氏2GG度至_度的範圍）被融化或分解皿 或是能被溶解於特定的溶液中（例如三氯乙稀 (trichloroethylene))以便將磨損的扣持組件自基座環上 分離，是合乎意欲的。 A 當扣持組件被黏著於基座環上時，它們應該被對齊 (align to)基座環以維持尺寸的正確性。為將扣持組件快 13 1279288 速地對齊基座環’如於圖15中所示，於扣持組件1〇4的黏 著表面上能夠形成突出結構140。圖16例示了因相同目的 而形成於扣持組件104的黏著表面上之刻蝕結構15〇。圖 Π及圖18顯示了扣持組件1〇4上之具有能將突出結構14〇 及刻餘結構150相連接的結構（matching structures)之基 %座環200。此處，如於圖17中所示，基座環200的黏著表 面上會形成刻敍連接結構2 2 〇，而在圖18中，基座環2 〇 〇 的黏著表面上則會形成突出連接結構230。一旦扣持組件 104之突出結構140與基座環200之刻蝕連接結構22〇相 吻合（coincide with)，或是扣持組件1〇4之刻蝕結構15〇 與基座ί衣2 0 0之犬出連接結構2 3 0相吻合，扣持組件1 〇 4 就能對齊基座環200。突出結構的形狀可能是圓柱狀或方 柱狀。因此，刻蝕結構的形狀可能是圓形孔或方形孔。圖 19及圖20分別顯示了山脊狀（ridge-shaped)之突出結構 142及溝渠狀（trench-shaped)之刻蝕結構Η〗之另一範 鲁例。 圖21至圖23係例示了根據連接於基座環2〇〇之扣持 組件106、108、及109之總數之扣持組件形狀之另一範例 之扣持環90之底視圖。根據扣持環的尺寸、扣持組件的厚 度、及扣持組件係由何種金屬所組成之不同，扣持組件的 總數可以是4至72。當扣持環的尺寸愈大，亦即當被研磨 的晶圓愈大時，且當扣持組件的厚度愈薄時，增加扣持組 件的總數是合乎意欲的。參考圖23，當扣持環9〇係由呼 多扣持組件（例如不少於18件）所構成之時，於於進行化 14 1279288, * » 學機械研磨時，會接觸並支撐晶圓的侧邊表面之扣持組件 109之内侧表面，即可由平面所組成。參考圖21至圖23， 如果扣持組件106、108、及109的尺寸能夠確定 (determined)，因此當全部的扣持組件連接於基座環200 時，相鄰的二個扣持組件便可以被裂縫150分開，這樣的 作法是合乎意欲的。裂缝150提供空間使扣持組件106、 ' 108、及109易於自基座環200上分離，並且容納 • (accommodating)因為熱膨脹所致之扣持組件106、108、 • 及109的侧邊膨脹。裂縫150亦使得拋光液於進行化學機 械研磨時易於流動。裂縫150的寬度介於1 mm至5mm是合 乎意欲的。裂縫150的方向指向如圖21至圖23中所示之 扣持環90的中央。然而，如圖24中所示，當使用不對稱 的扣持組件110時，裂缝160的方向可能會自扣持環90 的中央偏離。 圖25代表基座環250之透視圖。於此，基座環250 $ 於扣持組件所連接之頂部表面具有凹槽260。如果扣持組 件的厚度是薄的，當該扣持組件與基座環的平坦頂部表面 連接時，介於二個相鄰的扣持組件間之裂縫深度將會是淺 的。這樣可能會導致於進行化學機械研磨時，拋光液的流 動至扣持環的内側部位不充足。為增加裂縫的深度，首先 在基座環250之上會形成凹槽260，並且扣持組件100會 被連接於如圖26所示之基座環上。之後，介於二個扣持組 件100間之裂縫270即具有大於扣持組件100厚度之深度。 雖然本發明的原理已以參考於本文中例示之某些實 15 J279288 知例的範例的方式為敘述，但對於本發明的原理在形式上 及細節上所作的許多改變，在不違反如下方所述之申請專 利範圍之本發明之精神及範圍的情形下，熟習此技藝之人 將能夠瞭解。 元件符號說明 10 壓板 12 拋 光墊 16 晶圓 18 驅 動器 20 驅動軸 22 驅 動器底座 26,30,40,90 扣持壞 50,50， 上 部圓環 60， 6(Γ 下部圓環 200, 202,204 ,206 基座ί哀 100, 102,104 ，106，108，109，120，120 ，，130 ，130， 扣持組件Material can be used. In order to recycle and reuse the susceptor ring, the adhesive material can be melted or decomposed at high temperatures (eg, between 2 GG and _ degrees Celsius) or can be dissolved in a specific solution (eg, trichloroethylene). It is desirable to separate the worn clasp assembly from the susceptor ring. A When the retaining components are attached to the base ring, they should be aligned to the base ring to maintain dimensional correctness. In order to fasten the fastening assembly 13 1279288 to the base ring as shown in Fig. 15, a protruding structure 140 can be formed on the adhesive surface of the holding assembly 1〇4. Fig. 16 illustrates an etched structure 15A formed on the adhesive surface of the holding member 104 for the same purpose. FIG. 18 and FIG. 18 show the base seat ring 200 of the fastening assembly 1〇4 having matching structures capable of joining the protruding structure 14〇 and the residual structure 150. Here, as shown in FIG. 17, the engraved connection structure 2 2 〇 is formed on the adhesive surface of the susceptor ring 200, and in FIG. 18, the affixed surface of the susceptor ring 2 形成 is formed with a protruding connection. Structure 230. Once the protruding structure 140 of the holding component 104 is coincident with the etched connection structure 22 of the susceptor ring 200, or the etched structure of the holding component 1〇4 is 〇 基座 2 2 0 0 The dog out connection structure 2 3 0 coincides, and the fastening component 1 〇 4 can be aligned with the susceptor ring 200. The shape of the protruding structure may be cylindrical or square. Therefore, the shape of the etched structure may be a circular hole or a square hole. Figures 19 and 20 show another example of a ridge-shaped protruding structure 142 and a trench-shaped etched structure. 21 to 23 are bottom views of another example of the buckle ring 90 in accordance with the shape of the latching assembly connected to the total number of the latching members 106, 108, and 109 of the base ring 2''. Depending on the size of the buckle ring, the thickness of the fastening component, and the metal of the fastening component, the total number of fastening components can range from 4 to 72. The greater the size of the retaining ring, i.e., the larger the wafer being ground, and the thinner the thickness of the latching assembly, the greater the total number of latching components is desirable. Referring to FIG. 23, when the holding ring 9 is composed of a multiple holding component (for example, not less than 18 pieces), it is subjected to the process of chemical processing, and the wafer is contacted and supported. The inner side surface of the fastening component 109 of the side surface can be composed of a flat surface. Referring to FIGS. 21-23, if the dimensions of the fastening components 106, 108, and 109 can be determined, when all of the fastening components are coupled to the susceptor ring 200, the adjacent two fastening components can It is desirable to be separated by the crack 150. The slit 150 provides space to facilitate the separation of the latching assemblies 106, '108, and 109 from the susceptor ring 200 and accommodating the sides of the latching assemblies 106, 108, and 109 due to thermal expansion. The crack 150 also allows the polishing fluid to flow easily during chemical mechanical polishing. It is desirable that the width of the crack 150 is between 1 mm and 5 mm. The direction of the slit 150 is directed to the center of the retaining ring 90 as shown in Figs. 21 to 23 . However, as shown in Fig. 24, when the asymmetric latching assembly 110 is used, the direction of the crack 160 may deviate from the center of the retaining ring 90. FIG. 25 represents a perspective view of the susceptor ring 250. Here, the base ring 250 has a recess 260 on the top surface to which the fastening component is attached. If the thickness of the fastening component is thin, when the fastening component is attached to the flat top surface of the susceptor ring, the depth of the crack between the two adjacent fastening components will be shallow. This may result in insufficient flow of the polishing liquid to the inside of the retaining ring during chemical mechanical polishing. To increase the depth of the crack, a groove 260 is first formed over the susceptor ring 250, and the retaining assembly 100 is attached to the susceptor ring as shown in FIG. Thereafter, the crack 270 between the two fastening components 100 has a depth greater than the thickness of the fastening component 100. Although the principles of the present invention have been described with reference to the examples of some of the examples exemplified herein, many variations in form and detail of the principles of the present invention do not violate the following Those skilled in the art will be able to understand the teachings of those skilled in the art. Component Symbol Description 10 Platen 12 Polishing Pad 16 Wafer 18 Driver 20 Drive Shaft 22 Drive Base 26, 30, 40, 90 Buckle Bad 50, 50, Upper Ring 60, 6 (Γ Lower Ring 200, 202, 204, 206 Base Blocks, 100, 102, 104, 106, 108, 109, 120, 120,, 130, 130, holding components
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