TWI277735B - Semiconductor acceleration sensor - Google Patents

Semiconductor acceleration sensor Download PDF

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Publication number
TWI277735B
TWI277735B TW094132470A TW94132470A TWI277735B TW I277735 B TWI277735 B TW I277735B TW 094132470 A TW094132470 A TW 094132470A TW 94132470 A TW94132470 A TW 94132470A TW I277735 B TWI277735 B TW I277735B
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TW
Taiwan
Prior art keywords
flexible
piezoelectric
wrist
flexible wrist
wrists
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Application number
TW094132470A
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Chinese (zh)
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TW200624813A (en
Inventor
Yoshio Ikeda
Masayuki Hosoda
Isao Sakaguchi
Masakatsu Saitoh
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Hitachi Metals Ltd
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Priority claimed from JP2004287077A external-priority patent/JP4431475B2/en
Priority claimed from JP2004287079A external-priority patent/JP2006098323A/en
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of TW200624813A publication Critical patent/TW200624813A/en
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Publication of TWI277735B publication Critical patent/TWI277735B/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)

Abstract

A semiconductor acceleration sensor is disclosed which has a small difference in acceleration detection sensitivity among X, Y, and Z axes and a high detection sensitivity. The acceleration sensor has a mass portion in its center, a support frame surrounding the mass portion, and a plurality of flexible arms connecting the mass portion and the support frame. The flexible arm has wider portions on both ends and a narrower portion between the wider portions. Piezo resistors are restrictedly provided within a top surface region of the wider portion of the flexible arm, and through holes connecting metal wires and the piezo resistors are disposed on the mass portion/support frame. The plurality of flexible arms are symmetric with respect to the center of the mass portion, and each of the flexible arms is symmetric with respect to the center line of the flexible arm.

Description

1277735 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於攜帶型終端機器與玩具、 所使用之加速度檢測用半導體型加速度感測 【先前技術】 說明使用壓電阻抗元件之以往的3軸加 φ 構造。第1 5圖係以分解斜視圖來表示加速 速度感測器中，加速度感測器元件200係以 於機殻2，蓋3以接著劑被固定於保護機殼 測器元件200的外部端子7及保護機殻2之 金屬線4而被連接，加速度感測器元件200 機殼之外部端子6而被取出外部。在此說明 度感測器元件200稱爲加速度感測器。 第16圖係表示加速度感測器200的平佳 • 中，爲了使得壓電阻抗元件的配置容易了解 支撐框上之外部端子的記載。加速度感測器 矽單結晶基板的厚板部所形成的質量部1 3 配置之支撐框11、及由連接質量部13與支 單結晶基板的薄板部所形成之2對的相互正 撓腕21、21’、22、22’、及對應可撓腕上面I 方向（X與Y)及垂直可撓部上面之方向（ 各軸複數的壓電阻抗元件51與51’、52 | 6Γ、62 與 62*、71 與 711、72 與 72’所構成 汽車、飛機等 器0 速度感測器的 度感測器。加 接著劑被固定 2。加速度感 端子5，係以 的輸出從保護 書中，將加速 5圖。第16圖 ，省略配線與 2 0 0係由：由 、及包圍其而 撐框11之矽 交的樑狀之可 的2個正交之 Z )而設置的 每52' 、 61與 。另外，可撓 -5- (2) 1277735 腕21、21’、22、22’係藉由於薄板部設置貫穿孔150而作 成樑狀，成爲容易變形、適合高靈敏度化之構造。 在以往之加速度感測器中，X軸用壓電阻抗元件 51、51’與Z軸用壓電阻抗元件71、71’之各一端，係分別 設置有使可撓腕21與支撐框11的邊界及可撓腕11與質 量部1 3的邊界成爲一致之壓電阻抗元件，以便獲得最大 的感測器輸出。 壓電阻抗元件在如第1 6圖所示般配置時，X軸與z 軸的靈敏度（對於加速度1 G、驅動電壓1 V之輸出），一 般知道有如第1 7圖之曲線所示的關係。質量部的厚度改 變時，X軸的靈敏度爲二次函數地改變。Z軸的靈敏度爲 1次函數地改變。因此，X軸與Z軸的靈敏度產生差異。 爲了使此差異不見，則進行改變質量部的厚度與壓電阻抗 元件本身的靈敏度、或改變壓電阻抗元件的配置等。 爲了使X軸與Z軸的輸出差異不見，可將質量部的 厚度設爲使X軸與Z輸的靈敏度値成爲相同之8 00 μηι程 度。但是，半導體等所使用之Si單結晶基板的厚度，以 62 5 μιη與52 5 μηι爲主流，約800μιη之Si單結晶基板成爲 特製品，不單高成本，也有交期不穩定的問題，因此，依 據質量部的厚度來進行輸出調整，並不理想。 壓電阻抗元件係於砂基板植入硼等之不純物元素而形 成。藉由改變此不純物元素濃度，雖可改變壓電阻抗本身 的靈敏度，但是，在改變不純物元素濃度上，至少需要數 次的不純物植入作業。因此，不單導致製造成本的提升， -6- (3) 1277735 也會導致設備能力的降低，也不是理想的方法。 另外，爲了使X、Y、Z軸的輸出差異不見，藉由改 變壓電阻抗元件的配置，降低Ζ軸的輸出來配合X、γ軸 的輸出，此在日本專利特開2003 -2795 92號及日本專利特 開2003-294781號公報中被提出。使Ζ軸靈敏度配合輸出 低的Χ、Υ軸的靈敏度，會犧牲其之靈敏度。另外，在以 往的加速度感測器中，係一種和X軸的輸出比較，Ζ軸 • 的輸出變大之構造，軸間的輸出差異會變大。軸間的輸出 差異爲大時，需要各軸準備有輸出放大率不同的放大器。 【發明內容】 本發明之目的爲：藉由不降低Ζ軸的輸出，使X、Υ 軸的輸出提高，使得Χ、γ、ζ軸的輸出差異變小，無須 各軸準備輸出放大率不同的放大器，可獲得便宜、高靈敏 度的半導體型加速度感測器。 ©本發明之半導體型加速度感測器，其特徵爲：具有， 位於中央，且具有上面之質量部、及 從質量部分開特定距離，包圍該質量部，且具有上面 之支撐框、及 從質量部上面的端部延伸，連結質量部上面端與支撐 框上面的內側端，以支撐框內面懸吊質量部之複數的可撓 腕； 複數之可撓腕各由： 爲各爲連接可撓腕與支撐框或質量部之邊界的可撓腕 -7- (4) 1277735 的兩端部份，且具有垂直可撓腕長度方向之剖面積的寬幅 部、及 爲被以位於可撓腕的兩端之2個寬幅部所夾住之可撓 腕部份，且垂直可撓腕長度方向之剖面積比寬幅部剖面積 更小之窄幅部所形成； 可撓腕上面係具有： 於支撐框上面或質量部上面具有兩端子，各由兩端子 Φ 延伸於可撓腕長度方向，限定性設置於可撓腕寬幅部上面 區域內之壓電阻抗元件、及 於可撓腕上面，對稱配置於可撓腕上面中心線，從該 可撓腕之一方的寬幅部上面延伸至窄幅部上面，並及於其 它的寬幅部上面，而延伸於該可撓腕長度方向之複數條的 金屬配線； 複數條的金屬配線中，至少一條係連接於設置在該可 撓腕上面之壓電阻抗元件之至少其中1端子，而且， Φ 壓電阻抗元件各具有： 對稱配置於可撓腕上面的中心線，且各延伸於可撓腕 長度方向之至少2個壓電副阻抗元件、及 連接壓電阻抗元件之兩端子以外的該至少2個壓電副 阻抗元件之端部各2個’於壓電阻抗元件之兩端子間’串 聯連接該至少2個壓電副阻抗元件之高濃度擴散層。 在前述半導體型加速度感測器中’質量部與支撐框與 複數的可撓腕，係以矽結晶形成爲一體， 壓電副阻抗元件與高濃度擴散層，以於形成可撓腕之 -8 - (5) 1277735 Ϊ夕結晶的一部份摻雜週期表III族或V族元素所形成爲 佳。 在前述半導體型加速度感測器中，前述複數條之金屬 配線的至少其中1條，係沒有連接於壓電阻抗元件之任何 一個端子的虛擬金屬配線。 在前述半導體型加速度感測器中，前述複數的可撓腕 中，2個係延伸於質量部上面內的正交之2方向中之1方 ，向， 前述複數的可撓腕中，其它2個係延伸於質量部上面 內的正交之2方向中的其它1方向， 前述複數的可撓腕各個在複數條的金屬配線之配置 中，以與其它之任何一個可撓腕爲實質上相同爲佳。 在本發明之半導體型加速度感測器中，複數的可撓腕 各個所具有之寬幅部，在垂直可撓腕長度方向之剖面中， 以成爲該窄幅部的1 .1至3.5倍爲佳，複數的可撓腕各個 > 所具有之寬幅部，在垂直可撓腕長度方向之剖面中，以成 爲爲該窄幅部的1 . 5至2 · 5倍更佳。 本發明之半導體型加速度感測器中，其特徵爲：具 有， 位於中央，且具有上面之質量部、及 從質量部分開特定距離，包圍該質量部，且具有上面 之支撐框、及 從質量部上面的端部延伸，連結質量部上面端與支撐 框上面的內側端，以支撐框內面懸吊質量部之4個可撓 -9- 1277735[Brief Description of the Invention] [Technical Field] The present invention relates to a portable terminal device and a toy, and a semiconductor type acceleration sensing for acceleration detection. [Prior Art] A conventional method using a piezoelectric impedance element is described. 3-axis plus φ construction. Fig. 15 is an exploded perspective view showing the acceleration speed sensor in which the acceleration sensor element 200 is attached to the casing 2, and the cover 3 is fixed to the external terminal 7 of the protective casing element 200 with an adhesive. And the metal wire 4 of the casing 2 is protected and connected, and the external terminal 6 of the casing of the acceleration sensor element 200 is taken out. The sensor element 200 is referred to herein as an acceleration sensor. Fig. 16 is a view showing the accuracy of the acceleration sensor 200. In order to make the arrangement of the piezoelectric impedance elements easy to understand the description of the external terminals on the support frame. The support frame 11 in which the mass portion 13 is formed by the thick sensor portion of the single crystal substrate of the acceleration sensor, and the two pairs of mutually rigid wrists 21 formed by the connecting mass portion 13 and the thin plate portion of the single crystal substrate , 21', 22, 22', and the direction of the upper surface of the flexible wrist (X and Y) and the direction of the vertical flexible portion (the piezoelectric impedance elements 51 and 51', 52 | 6Γ, 62 of each axis 62*, 71 and 711, 72 and 72' constitute the degree sensor of the vehicle, aircraft, etc. 0 speed sensor. The adhesive is fixed 2. The acceleration sensor terminal 5, the output is from the protection book, The figure 5 will be accelerated. In Fig. 16, the wiring is omitted, and every 2' is set by the two orthogonal Zs of the beam that surrounds the frame 11 and surrounds it. 61 with. Further, the flexible -5-(2) 1277735 wrists 21, 21', 22, and 22' are formed in a beam shape by providing the through-holes 150 in the thin plate portion, and are easily deformed and have a high sensitivity. In the conventional acceleration sensor, the X-axis piezoelectric impedance elements 51 and 51' and the Z-axis piezoelectric impedance elements 71 and 71' are provided with the flexible wrist 21 and the support frame 11 respectively. The boundary and the boundary of the flexible wrist 11 and the mass portion 13 become uniform piezoelectric resistive elements in order to obtain the maximum sensor output. When the piezoelectric impedance element is arranged as shown in Fig. 16, the sensitivity of the X-axis and the z-axis (for the acceleration 1 G, the output of the driving voltage 1 V) is generally known as the relationship shown in the curve of Fig. 17. . When the thickness of the mass portion is changed, the sensitivity of the X-axis changes as a quadratic function. The sensitivity of the Z-axis changes as a function of one time. Therefore, the sensitivity of the X-axis and the Z-axis is different. In order to make this difference, the thickness of the mass portion and the sensitivity of the piezoelectric impedance element itself are changed, or the arrangement of the piezoelectric impedance element is changed. In order to make the difference between the X-axis and the Z-axis output, the thickness of the mass portion can be set such that the sensitivity of the X-axis and the Z-transmission becomes the same 800 μm. However, the thickness of the Si single crystal substrate used for semiconductors and the like is 62 5 μm and 52 5 μm. The Si single crystal substrate of about 800 μm is a special product, which is not only expensive but also has a problem of unstable delivery. It is not desirable to perform output adjustment based on the thickness of the mass portion. The piezoelectric impedance element is formed by implanting an impurity element such as boron on a sand substrate. By changing the concentration of the impurity element, although the sensitivity of the piezoelectric impedance itself can be changed, at least several impurity implantation operations are required to change the concentration of the impurity element. Therefore, not only does the manufacturing cost increase, but the -6-(3) 1277735 also leads to a reduction in equipment capacity, which is not an ideal method. In addition, in order to make the difference in the output of the X, Y, and Z axes inconspicuous, the output of the x-axis is reduced by changing the arrangement of the piezoelectric impedance element to match the output of the X and γ axes, which is disclosed in Japanese Patent Laid-Open No. 2003-279592. And Japanese Patent Laid-Open No. 2003-294781 is proposed. Sensitivity to the Χ and Υ axes of the Ζ 灵敏度 sensitivity can be sacrificed. In addition, in the conventional acceleration sensor, a structure in which the output of the x-axis is increased as compared with the output of the X-axis, and the difference in output between the axes becomes large. When the difference between the outputs of the axes is large, it is necessary to prepare amplifiers with different output amplification factors for each axis. SUMMARY OF THE INVENTION The object of the present invention is to improve the output of the X and Υ axes without lowering the output of the Ζ axis, so that the output difference of the Χ, γ, and ζ axes becomes smaller, and it is not necessary to prepare the output magnifications of the axes differently. Amplifiers provide a low-cost, high-sensitivity semiconductor-type accelerometer. The semiconductor type acceleration sensor of the present invention is characterized in that it has a central portion and has a mass portion on the upper portion and a specific distance from the mass portion, surrounds the mass portion, and has a support frame and a quality from the upper surface. The upper end of the portion extends to connect the upper end of the mass portion with the inner end of the upper surface of the support frame to support the plurality of flexible wrists of the mass portion of the inner surface of the frame; the plurality of flexible wrists are respectively: The end of the wrist and the support frame or the mass of the boundary of the flexible wrist-7- (4) 1277735, and has a wide portion of the cross-sectional area of the vertical flexible wrist length direction, and is located in the flexible wrist The flexible wrist portion sandwiched between the two wide ends of the two ends, and the cross-sectional area of the vertical flexible wrist in the longitudinal direction is formed by a narrower portion having a smaller sectional area; the flexible wrist has : There are two terminals on the upper part of the support frame or on the upper part of the mass, each of which has two terminals Φ extending in the longitudinal direction of the flexible wrist, and is defined in the piezoelectric impedance element in the upper region of the wide portion of the flexible wrist, and the flexible wrist Above, symmetrically placed on the flexible wrist a center line extending from above the wide portion of the flexible wrist to the upper portion of the narrow portion and over the other wide portions, and extending a plurality of metal wires extending in the longitudinal direction of the flexible wrist; At least one of the metal wires of the strip is connected to at least one of the terminals of the piezoelectric impedance element disposed on the flexible wrist, and the Φ piezoelectric impedance elements each have: a center line symmetrically disposed on the upper surface of the flexible wrist, And at least two piezoelectric sub-impedance elements extending in the longitudinal direction of the flexible wrist and two end portions of the at least two piezoelectric auxiliary impedance elements other than the two terminals connected to the piezoelectric impedance element are respectively in the piezoelectric impedance A high concentration diffusion layer of the at least two piezoelectric sub-impedance elements is connected in series between the two terminals of the element. In the above-mentioned semiconductor type acceleration sensor, the 'mass part and the support frame and the plurality of flexible wrists are integrally formed by 矽 crystal, and the piezoelectric auxiliary impedance element and the high concentration diffusion layer are formed to form the flexible wrist -8 - (5) 1277735 A part of the crystallization of the cerium is preferably formed by group III or group V elements of the periodic table. In the above semiconductor type acceleration sensor, at least one of the plurality of metal wirings is not connected to a dummy metal wiring of any one of the piezoelectric impedance elements. In the semiconductor type acceleration sensor, two of the plurality of flexible wrists extend in one of two orthogonal directions in the upper surface of the mass portion, and the other two of the plurality of flexible wrists are the other two. The plurality of flexible wrists extend in the other one of the two orthogonal directions in the upper portion of the mass portion, and the plurality of flexible wrists are substantially identical to any other flexible wrist in the arrangement of the plurality of metal wires. It is better. In the semiconductor type acceleration sensor of the present invention, each of the plurality of flexible wrists has a wide portion in the longitudinal direction of the longitudinally flexible wrist, so as to be 1.1 to 3.5 times the narrow portion. Preferably, the plurality of flexible wrists each have a wide portion which is preferably 1.5 to 2.5 times as large as the narrow portion in the longitudinal direction of the longitudinally flexible wrist. The semiconductor type acceleration sensor of the present invention is characterized in that it has a central portion and has a mass portion on the upper surface and a specific distance from the mass portion, surrounds the mass portion, and has a support frame and a quality from the upper surface. The upper end of the upper portion extends, and connects the upper end of the mass portion with the inner end of the upper surface of the support frame to support the four flexible 9- 1277735 of the inner mass of the frame.

腕； 前述4個可撓腕中，2個係延伸於質量部上面內的正 '交之2方向中的1方向’其它2個係延伸於質量部上面內 的正交之2方向的其它1方向’ 可撓腕各由： 爲各爲連接可撓腕與支撐框或質量部之邊界的可撓腕 的兩端部份，且具有垂直可撓腕長度方向之剖面積的寬幅 φ 部、及 爲被以位於可撓腕的兩端之2個寬幅部所夾住之可撓 腕部份，且垂直可撓腕長度方向之剖面積比寬幅部剖面積 更小之窄幅部所形成； 前述4個可撓腕中，2個可撓腕上面，各具有： 於支撐框上面或質量部上面具有兩端子，各由兩端子 延伸於可撓腕長度方向，限定性設置於可撓腕寬幅部上面 區域內之測定可撓腕長度方向的加速度成分之壓電阻抗元 Φ 件，及測定質量部上面方向的加速度成分之壓電阻抗元 件、及 於可撓腕上面，對稱配置於可撓腕上面中心線，從該 可撓腕之一方的寬幅部上面延伸至窄幅部上面，並及於其 它的寬幅部上面，而延伸於該可撓腕長度方向之複數條的 金屬配線； 複數條的金屬配線中，至少一條係連接於設置在該可 撓腕上面之壓電阻抗元件之至少其中1端子， 前述4個可撓腕中，其它2個可撓腕上面各具有： -10- (7) 1277735 於支撐框上面或質量部上面具有兩端子，各由兩端子 延伸於可撓腕長度方向，限定性設置於可撓腕寬幅部上面 ~ 區域內之測定可撓腕長度方向的加速度成分之壓電阻抗元 件、及 於可撓腕上面，對稱配置於可撓腕上面中心線，從該 可撓腕之一方的寬幅部上面延伸至窄幅部上面，並及於其 它的寬幅部上面，而延伸於該可撓腕長度方向之複數條的 φ 金屬配線； 複數條的金屬配線中，至少一條係連接於設置在該可 撓腕上面之壓電阻抗元件之至少其中1端子， 壓電阻抗元件各具有： 對稱配置於可撓腕上面的中心線，且各延伸於可撓腕 長度方向之至少2個壓電副阻抗元件、及 連接壓電阻抗元件之兩端子以外的該至少2個壓電副 阻抗元件之端部各2個，於壓電阻抗元件之兩端子間，串 # 聯連接該至少2個壓電副阻抗元件之高濃度擴散層；而 且， 前述4個可撓腕各在複數條之金屬配線的配置中，與 其它任何一個可撓腕爲實質上相同。 在前述半導體型加速度感測器中，質量部與支撐框與 複數的可撓腕，係以矽結晶形成爲一體， 壓電副阻抗元件與高濃度擴散層，以於形成可撓腕之 矽結晶的一部份摻雜週期表III族或V族元素所形成爲 佳0 -11 - (8) 1277735 在前述半導體型加速度感測器中，前述4個可撓腕 中’其它2個之上面分別具有之複數條的金屬配線中，其 中2條係沒有連接於壓電阻抗元件之任何一個端子的虛擬 金屬配線。 在前述半導體型加速度感測器中，支撐質量部的可撓 腕’係於其之中央部具有比位於可撓腕的端部之寬幅部的 剖面積更小之窄幅部，所以，藉由所被施加的加速度，質 • 量部可以容易動作，延伸於所被施加的加速度之方向之可 撓腕可大爲彎曲。因此，關於質量部上面內的各軸方向 (可撓腕的延伸方向）的加速度，檢測靈敏度可以變大。 例如’在施加有X軸方向加速度時，延伸於垂直其 之方向（Y軸方向）之可撓腕，雖妨礙往質量部往X軸方 向的移位，但是，於Y軸方向的可撓腕設置有窄幅部， 所以’其阻力變小。因此，認爲X軸方向的檢測靈敏度 也可以變大。 • X軸方向的可撓腕與γ軸方向的可撓腕，如分別設置 窄幅部時，Y軸方向的檢測靈敏度與X軸方向的檢測靈敏 度都變大。其結果爲，能使X軸方向的檢測靈敏度與γ 軸方向的檢測靈敏度和Z軸方向的檢測靈敏度成爲相同程 度。 可撓腕的寬幅部剖面積（b )對窄幅部剖面積（a )之 剖面積比（b/a)爲1·1至3.5之間時，X軸方向與γ軸方 向之檢測靈敏度變得比以往者更大，X軸方向與Υ軸方向 之檢測靈敏度對Ζ軸方向的檢測靈敏度的靈敏度比變成接 -12- (10) 1277735 性。 壓電阻抗元件爲從可撓腕與質量部或支撐框的邊界而 限定性地設置於可撓腕的寬幅部上面區域內，在藉由加速 度之可撓腕的變形最大處，也有壓電阻抗元件，壓電阻抗 元件可顯示優異的靈敏度。進而，進行壓電阻抗元件與金 屬配線之連接的通孔並不在可撓腕之上，壓電阻抗元件的 偏置電壓小，其之溫度相關性也小。 如此，本發明之半導體型加速度感測器，可提高質量 部上面內之各方向（X軸方向與Y軸方向）的加速度檢測 靈敏度，成爲與垂直質量部上面之方向（Z軸方向）的加 速度檢測靈敏度相同位準。另外，使加速度檢測靈敏度比 以往更高，偏置電壓爲小、偏置電壓的溫度相關性也變 小。 【實施方式】 實施例1 參照第1圖至第5圖來說明本發明之半導體型加速度 感測器。第1圖係半導體型加速度感測器的平面圖，第2 圖係將半導體型加速度感測器的可撓腕加以放大表示之斜 視圖。在這些圖中，省略金屬配線的圖示。 本發明之半導體型加速度感測器，爲了可以高精度地 控制可撓腕的厚度，係以介由Si〇2絕緣層而形成SOI層 之矽單結晶基板，即 SOI晶圓所製作。所謂 SOI爲 Silicon On Insulator (絕緣層覆矽）之略稱。在此例中， -14- (11) 1277735 係將於約625 μηι厚之Si晶圓上薄薄形成成爲蝕刻阻擋層 之Si〇2絕緣層（約Ιμηι)，於其上形成約ΙΟμηι厚之N 型矽單結晶層之晶圓當成基板使用。在實施例之半導體型 加速度感測器1 〇〇中，於做成支撐框1 1的大小之正方形 的矽單結晶基板開有4個L字狀貫穿孔1 5 0，形成中央的 質量部1 3與位於其周圍之支撐框1 1、及橫跨彼等之間的 可撓腕21、21’、22、22’，而使可撓腕的部份變薄。加速 φ 度感測器1 〇〇是對應2個正交的檢測軸（X與Υ軸）及垂 直加速度感測器上面之檢測軸（Ζ軸），而於可撓腕上各別 具有壓電阻抗元件R1 1、R12.......R33、R34。即於延伸 在 X軸方向之可撓腕 21、21’上設置有壓電阻抗元件 R 1 1、R1 2、R1 3、R ί 4，來檢測X軸方向的加速度。於延 伸在 Y軸方向之可撓腕22、22’上設置有壓電阻抗元件 R2 1、R22、R2 3、R24，來檢測 Y軸方向的加速度。於延 伸於X軸方向之可撓腕21、21’進而設置有壓電阻抗元件 • R3 1、R3 2、R3 3、R34，來檢測Z軸方向之加速度。在此 例中，雖以設置於可撓腕21、21’上之壓電阻抗元件來檢 測Z軸方向的加速度，但是，檢測Z軸方向之加速度的 元件，也可以設置於可撓腕22、22’上。檢測各軸方向之 加速度的壓電阻抗元件，係各別構成全橋式檢測電路。 4個之可撓腕21、2Γ、22、22’，各別爲連接可撓腕 與支撐框11或質量部13之邊界，而且，由：具有垂直可 撓腕長度方向之剖面積的寬幅部2 1 1、2 1 2、及被位於可 撓腕兩側之2個寬幅部2 1 1、2 1 2所夾住之可撓腕部份， -15- (12) 1277735 且垂直可撓腕長度方向之剖面積比寬幅部剖面積還小之窄 幅部2 1 3所形成。 各壓電阻抗元件R1 1、R12.......R33、R34係如第1 圖及第2圖所示般，於支撐框上面或質量部上面具有兩端 子（通孔）11a與lib、......、34a與34b，各從兩端子 11a與 lib........ 34a與 34b延伸於可撓腕 21、2Γ、 22、22’長度方向而設置於可撓腕寬幅部211、212上面區 域內。各壓電阻抗元件R1 1、R12.......R33、R34係對稱. 配置於可撓腕21、21’、22、22’上面的中心線，而且，具 有延伸於可撓腕長度方向之至少2個（在此例中爲2個） 的壓電副阻抗元件（例如，R 1 1 a、R 1 1 b )。壓電姐抗元 件的兩端子（通孔）1 1 a與1 lb、......34a與34b以外之 至少2個壓電副阻抗元件的端部各2個，係被以高濃度擴 散層所連接，於壓電阻抗元件的兩端子 11a與 11b........34a與34b間，該至少2個之壓電副阻抗元 件係被串聯連接。 半導體型加速度感測器中，質量部1 3與支撐框1 1與 可撓腕21、2Γ、22、22’係以矽結晶形成爲一體。於以矽 結晶所製作之可撓腕21、2Γ、22、22’的上面之一部份， 摻雜週期表III族或V族元素，例如硼，而形成各壓電阻 抗元件及連接各2個之壓電阻抗元仵的高濃度擴散層 41。進而，壓電阻抗元件之各端子之介由通孔而與金屬配 線連接的部份，也成爲高濃度擴散層。 設置於延伸在X軸方向之可撓腕2 1、2 Γ上的壓電阻 -16- (13) 1277735 抗元件R1 1、R12、R13、R14，係形成第3A圖所示之全 橋式電路。壓電阻抗元件的端部係連接於設置於支撐框上 之外部端子1 It、12t、13t、14t，對外部端子12t、14t間 施加檢測用電壓，從外部端子1 11、1 3 t間而取出輸出。 設置於延伸在Y軸方向之可撓腕22、22’上之壓電阻抗元 件R2 1、R22、R2 3、R24的橋式電路，雖未顯示出，但 是，係和第3 A圖相同，對支撐框上的外部端子22t、2 4t φ 間施加檢測用電壓，從外部端子2 11、2 3 t間取出輸出。Ζ 軸用壓電阻抗元件R3 1、R32、R33、R34係設置於延伸在 X軸方向之可撓腕21、21’上，形成第3Β圖所示之全橋式 電路。壓電阻抗元件的端部係連接於設置於支撐框上之外 部端子31t、32t、33t、34t，對外部端子32t、34t間施加 檢測用電壓，從外部端子3 11、3 3 t間取出輸出。 第4圖與第5圖係表不可撓腕上之壓電阻抗元件的配 置與金屬配線的詳細。第4A圖係表示可撓腕21上之X 軸用與Z軸用之壓電阻抗元件，第4B圖係表示第4A圖 之4B-4B線剖面。第5A圖係表示可撓腕2Γ上之X軸用 與Z軸用之壓電阻抗元件，第5B圖係表示Y軸用之壓電 阻抗元件。 第4A圖中，於接近可撓腕21上之支撐框1 1處，將 從支撐框11上延伸於可撓腕21上之2個X軸用壓電副 阻抗元件R1 la、R1 lb對稱於可撓腕21的中心線而配 置，這些2個之壓電副阻抗元件Rlla、Rllb的可撓腕中 心側的端部間，係以高濃度擴散層41加以連接，而形成 -17- (14) 1277735 X軸用壓電阻抗元件R π。另外，於接近可撓腕21上之 質量部13處，將從質量部13上延伸於可撓腕21上之2 個X軸用壓電副阻抗元件R12a、R12b對稱於可撓腕21 的中心線而配置，這些2個之壓電副阻抗元件R1 2a、 R 1 2b的可撓腕中心側之端部間，係以高濃度擴散層4 1加 以連接，而形成X軸用壓電阻抗元件R1 2。另外，壓電副 阻抗元件R1 la與壓電副阻抗元件R1 2b係在可撓腕21上 排列於同一線上，壓電副阻抗元件R1 1 b與壓電副阻抗元 件R 1 2 a係於可撓腕2 1上排列於同一線上。此處，構成壓 電阻抗元件R 1 1之2個壓電副阻抗元件R 1 1 a、R 1 1 b各別 之長度、及構成壓電阻抗元件R12之2個壓電副阻抗元件 R12.a、R12b各別之長度，係成爲以往之加速度感測器所 使用的壓電阻抗元件長度（約1〇〇 μπι )的約一半（約 50μιη )，寬度幾乎相同（約5μπι )，所以，由2個壓電 副阻抗元件所形成的壓電阻抗元件R11、R12的長度，各 別爲約1 〇 〇 μ ni。 如第4Β圖之X軸用壓電阻抗元件的剖面圖所示般， 壓電副阻抗元件R 1 1 a的支撐框1 1上之端部，係通過開通 於氧化矽絕緣層31之通孔1 1 a ’而連接於形成於支撐框 1 1上之金屬配線1 7 (以粗虛線表示），此金屬配線1 7係 連接於支撐框上之外部端子nt。再度參照第4A圖，壓 電副阻抗元件R Π b之支撐框1 1上的端部，係通過開通於 氧化矽絕緣層31之通孔Π b ’而連接於形成於支撐框1 1 上之金屬配線1 7，此金屬配線1 7係連接於支撐框上之外 -18- (15) 1277735 部端子12t。壓電副阻抗元件R12a之質量部13上的端 部，係通過開通於氧化矽絕緣層31之通孔12a，而連接 於金屬配線1 7，此金屬配線1 7係在絕緣層3 1上與壓電 副阻抗元件R1 2a、R1 lb平行而沿著可撓腕21延伸，於 通孔lib處和延伸於外部端子12t之金屬配線17連接。 壓電副阻抗元件R1 2b之質量部13上的端部，係通過開通 於氧化矽絕緣層31之通孔12b，而連接於2條之金屬配 線1 7，其中一條金屬配線係在絕緣層31上與壓電副阻抗 元件R12b ' R1 la平行而沿著可撓腕21延伸，避開通孔 1 1 a而連接於外部端子1 3t。另外一條金屬配線係橫亙質 量部1 3上而與位於可撓腕21相反側之可撓腕2 1 ’上的壓 電阻抗元件R1 3的壓電副阻抗元件R13a連接。壓電副阻 抗元件R1 la與壓電副阻抗元件R1 lb係於可撓腕21上， 對稱於可撓腕21之中心線，壓電副阻抗元件R1 2a與壓電 副阻抗元件2b係於可撓腕21上，對稱於可撓腕21的 中心線，所以，在可撓腕21上將壓電副阻抗元件R1 la的 通孔1 1 a與壓電副阻抗元件R 1 2b的通孔1 2b加以連結之 金屬配線1 7，與在可撓腕2 1上將壓電副阻抗元件R1 lb 的通孔lib與壓電副阻抗元件R12a的通孔12a加以連結 之金屬配線1 7，係對稱於可撓腕2 1的中心線。 關於設置於可撓腕2 1 ’上之X軸用壓電阻抗元件 R13、R14，則參照第5A圖，來說明構成壓電阻抗元件 R13之2個壓電副阻抗元件R13a、R13b及構成壓電阻抗 元件R14之2個壓電副阻抗元件R14a、R14b之構造，及 -19- (17) 1277735 部，係通過開通於氧化矽絕緣層3 1之通孔1 3 b而連接於 金屬配線1 7，此金屬配線1 7係於氧化矽絕緣層31上和 壓電副阻抗元件R13b、R14a平行，而在沿著可撓腕2Γ 而延伸之通孔1 4a處，與延伸於外部端子1 4t之金屬配線 17連接。壓電副阻抗元件R1 4b之支撐框1 1上的端部， 係通過開通於氧化矽絕緣層31之通孔14b而與形成於支 撐框1 1上之金屬配線1 7連接，此金屬配線1 7係連接於 支撐框上之外部端子lit。 質量部1 3上之通孔1 3 a與支撐框1 1上之通孔1 4b附 近之間，金屬配線1 7係於氧化矽絕緣層3 1上和壓電副阻 抗元件R] 3a、R14b平行，而沿著可撓腕21’延伸而設 置。但是，此，金屬配線1 7在材質、剖面構造與R寸上， 雖與可撓腕2 1’上的其他金屬配線1 7相同，雖然連接於通 孔1 3 a，但是，並沒有連接於通孔1 4b，而係連接於支撐 框11上之外部端子13t。設置於壓電副阻抗元件R1 3a、 R 14b上之金屬配線17的可撓腕21’上之部份，與設置於 壓電副阻抗元件R13b、R1 4a上之金屬配線17的可撓腕 2 1’上的部份，係做成完全相同的構造，所以，可撓腕21 上之2個壓電阻抗元件Rll、R12以及其之配線，和可撓 腕2Γ上之2個壓電阻抗元件R13、R14及其之配線係成 爲完全相同之構造。 如該第4A圖所示般，於可撓腕21上設置有Z軸用 壓電阻抗元件R31、R32。構成壓電阻抗元件R31之2個 壓電副阻抗元件R3 la、R3 lb各於接近可撓腕21上之支 -21 - (18) 1277735 撐框Π處，從支撐框11上延伸於可撓腕21上，對稱於 可撓腕21的中心線，配置於從X軸用壓電副阻抗元件 R 1 1 b、R 11 a之各外側，即可撓腕2 1的中心線比壓電副阻 抗元件Rllb、Rlla各個更遠之位置，2個壓電副阻抗元 件R3 1 a、R3 1 b之可撓腕中心側的端部間，係以高濃度擴 散層41所連接，來形成Z軸用壓電阻抗元件R31。另 外，構成Z軸用壓電阻抗元件R3 2之2個壓電副阻抗元 件R32b、R3 2a各個，係於接近可撓腕21上之質量都13 處，從質量部13上延伸於可撓腕21上，對稱於可撓腕 2 1的中心線，配置於從X軸用壓電副阻抗元件R 12a、 R 1 2b之各外側，即可撓腕2 1的中心線比壓電副阻抗元件 R12a、R12ba各個更遠之位置。2個塵霓副阻抗元件 R3 1 a、R3 1 b之可撓腕中心側的端部間，係以高濃度擴散 層4 1所連接，來形成Z軸用壓電阻抗元件R3 2。壓電副 阻抗元件R3 la與壓電副阻抗元件R3 2 b係於可撓腕21上 排列於同一線上，壓電副阻抗元件R3 1 b與壓電副阻抗元 件R3 2 a係於可撓腕2 1上排列於同一線上。此處，壓電副 阻抗元件R31a、R31b、R32a、R32b各別之長度，係爲以 往的加速度感測器所使用之壓電阻抗元件長度的約一半， 寬度幾乎相同。 壓電副阻抗元件R3 1 a的支撐框1 1上之端部，係通過 開通於氧化矽絕緣層31之通孔3 1 a，而連接於形成於支 撐框1 1上之金屬配線1 7，此金屬配線1 7係連接於支撐 框上之外部端子3 11。壓電副阻抗元件R3 1 b之支撐框1 1 -22- (19) 1277735 上的端部，係通過開通於氧化矽絕緣層31之通孔3 1 b， 而連接於形成於支撐框1 1上之金屬配線1 7，此金屬配線 17係連接於支撐框上之外部端子32t。壓電副阻抗元件 R3 2a之質量部13上的端部，係通過開通於氧化矽絕緣層 3 1之通孔32a，而連接於金屬配線1 7，此金屬配線1 7係 在絕緣層31上與壓電副阻抗元件R3 2a、R31b平行而沿 著可撓腕21延伸，於通孔31b處和延伸於外部端子32t 之金屬配線17連接。壓電副阻抗元件R3 2b之質量部13 上的端部，係通過開通於氧化矽絕緣層3 1之通孔3 2b， 而連接於金屬配線1 7，該金屬配線係在絕緣層31上與壓 電副阻抗元件R3 2b、R3 la平行而沿著可撓腕21延伸， 避開通孔3 1 a而連接於外部端子.33 t。壓電副阻抗元件 R3 la與壓電副阻抗元件R3 lb係於可撓腕21上，對稱於 可撓腕2 1之中心線，壓電副阻抗元件R3 2b與壓電副阻抗 元件R3 2a係於可撓腕21上，對稱於可撓腕21的中心 線，所以，在可撓腕2 1上將壓電副阻抗元件R3 1 a的通孔 3 1a與壓電副阻抗元件R32b的通孔32b加以連結之金屬 配線1 7，與在可撓腕2 1上將壓電副阻抗元件R3 1 b的通 孔3 1b與壓電副阻抗元件R32a的通孔32a加以連結之金 屬配線1 7，係對稱於可撓腕2 1的中心線。 設置於可撓腕21’上之Z軸用壓電阻抗元件R3 3、R34 的詳細，請參照第5A圖，構成壓電阻抗元件R33之2個 壓電副阻抗元件R33a、R33b及構成壓電阻抗元件R34之 2個壓電副阻抗元件R3 4a、R3 4b的構造與彼等間之接 -23- (20) 1277735 線，和構成設置於可撓腕21上之Z軸用壓電阻抗元件 R3 2、R31各個之壓電副阻抗元件R32b、R32a以及壓電 副阻抗元件R3 1 b、R3 1 a之構造及彼等間之接線’係完全 相同。 如以上詳細說明般，形成於可撓腕21上之X軸用壓 電阻抗元件R11、R12之構造及在可撓腕21上連結彼等 之間的金屬配線17之構造，與形成於可撓腕21’上之X 軸用壓電阻抗元件R14、R13的構造及於可撓腕21’上連 結彼等之間的金屬配線1 7、1 之構造，實質上爲相同， 另外，形成於可撓腕21上之Z軸用壓電阻抗元件R31、 R32的構造及於可撓腕21上連結彼等之間的金屬配線17 的構造，和形成於可撓腕21’上之Z軸用v壓“電阻抗元件 R3 4、R33之構造及於可撓腕21’上連結彼等之間的金屬配 線17之構造，實質上爲相同。因此，可撓腕21與可撓腕 2 1 ’實質上成爲相同，依據從外部所施加的加速度，同樣 地，或對稱於質量部1 3的中心而進行相同動作與彎曲。 第5B圖中，於接近可撓腕22上之支撐框11處，將 從支撐框11上延伸至可撓腕22上之2個Y軸用壓電副 阻抗元件R21a、R21b對稱於可撓腕22的中心線而配 置，將這些2個壓電副阻抗元件R21a、R2 lb的可撓腕中 心側之端部間以高濃度擴散層41加以連接，來形成Y軸 用壓電阻抗元件R21。另外，於接近可撓腕22上之質量 部1 3處，將從質量部1 3上延伸至可撓腕22上之2個Y 軸用壓電副阻抗元件R2 2a、R22b對稱於可撓腕22的中 -24- (21) 1277735 心線而配置，將這些2個壓電副阻抗元件R22 a、R2 2b的 可撓腕中心側之端部間以高濃度擴散層4 1加以連接，來 形成Y軸用壓電阻抗兀件R 2 2。另外，壓電副阻抗元件 R21 a與壓電副阻抗元件R22b於可撓腕22上爲排列於同 —線上，壓電副阻抗元件R2 lb與壓電副阻抗元件R2 2 a 於可撓腕22上爲排列於同一線上。此處，壓電副阻抗元 件R21a、R21b、R22a、R2 2b各別之長度，係爲以往之加 φ 速度感測器所使用之壓電阻抗元件長度的約一半，寬度幾 乎相同。 ’ 壓電副阻抗元件R2 1 a的支撐框1 1上之端部，係通過 開通於氧化矽絕緣層3 1之通孔2 1 a，而連接於形成於支 撐框1 1上之金屬配線17，此金屬配線17係連接於支撐 框上之外部端子21t。壓電副阻抗元件R21b之支撐框11 上的端部，係通過開通於氧化矽絕緣層3 1之通孔2 1 b， 而連接於形成於支撐框1 1上之金屬配線1 7，此金屬配線 φ 1 7係連接於支撐框上之外部端子22t。壓電副阻抗元件 R22a之質量部13上的端部，係通過開通於氧化矽絕緣層 3 1之通孔22a，而連接於金屬配線1 7，此金屬配線1 7係 在絕緣層31上與壓電副阻抗元件R22 a、R2 lb平行而沿 著可撓腕22延伸，於通孔21b處和延伸於外部端子22t 之金屬配線17連接。壓電副阻抗元件R22b之質量部13 上的端部，係通過開通於氧化矽絕緣層3 1之通孔22b， 而連接於2條之金屬配線1 7，其中一條金屬配線係在絕 緣層31上與壓電副阻抗元件R22b、R21a平行而沿著可 -25- (22) 1277735 撓腕22延伸，避開通孔21a而連接於外部端子23t。另外 一條金屬配線係橫亙質量部1 3上而與位於可撓腕22相反 側之可撓腕22’上的壓電阻抗元件R23的壓電副阻抗元件 R23a連接。壓電副阻抗元件 R21a與壓電副阻抗元件 R21b係於可撓腕22上，對稱於可撓腕22之中心線，壓 電副阻抗元件R22a與壓電副阻抗元件R22b係於可撓腕 22上，對稱於可撓腕22的中心線，所以，在可撓腕21 φ 上將壓電副阻抗元件R2 1 a的通孔2 1 a與壓電副阻抗元件 R22b的通孔22b加以連結之金屬配線17，與在可撓腕22 上將壓電副阻抗元件R2 1 b的通孔2 1 b與壓電副阻抗元件 R22a的通孔22a加以連結之金屬配線17，係對稱於可撓 腕22的中心線。4 … 〃 如此處說明般，設置於可撓腕22上之Y軸用壓電阻 抗元件R21、R22及連結彼等的金屬配線17之構造，與 設置於可撓腕21上之X軸用壓電阻抗元件Rll、R12及 • 連結彼等的金屬配線之構造，實質上爲相同。 位於可撓腕22上之氧化矽絕緣層3 1上，對稱於可撓 腕22的中心線，於從連結通孔22b與通孔21a附近之金 屬配線1 7與連結通孔2 1 b、22a間之金屬配線1 7各別之 外側，即可撓腕22的中心線更遠離這些金屬配線之位 置，設置有與金屬配線17相同構造、材質、尺寸的虛擬 金屬配線17d、17d’。 虛擬金屬配線17d係設置於對應 在可撓腕21上設置有連結通孔31b、32a間之金屬配線 17的位置之可撓腕22上的位置，虛擬金屬配線17d’係設 -26- (23) 1277735 置於對應在可撓腕21上設置有連結通孔32b與通孔31a 附近之金屬配線1 7的位置之可撓腕22上的位置。而且， 虛擬金屬配線17d、17d’係於支撐框11與質量部13之 間，橫亙可撓腕2 2全長而延伸。 設置於可撓腕22’上之 Y軸用壓電阻抗元件R23、 R24的詳細，雖然未圖示出，但是，構成壓電阻抗元件 R23之2個壓電副阻抗元件R23a、R23b及構成壓電阻抗 元件R24之2個壓電副阻抗元件R24a、R24b之構造及彼 等間之接線，和構成設置於可撓腕2 Γ上之X軸用壓電阻 抗元件 R14、R13 之壓電副阻抗元件 R14a、R14b、 R1 3a、R1 3b的構造及彼等之接線爲相同，所以從以上說 明應該可以理解。可撓腕22’係和可撓腕22相同，具有2 條的虛擬金屬配線。因此，可撓腕22與可撓腕22’實質上 成爲相同，根據從外部所施加的加速度，同樣地或對稱於 質量部的中心而產生相同的動作與彎曲。 如比較可撓腕21(21’）與可撓腕22(22’）時，前者係具 有8個壓電副阻抗元件，及具有4個連結彼等之高濃度擴 散層，後者係具有4個壓電副阻抗元件，及具有2個連結 彼等之高濃度擴散層。而且，可撓腕21與可撓腕22都具 有4條實質上相同之金屬配線或虛擬金屬配線。可撓腕 21 ( 2Γ ) 、22(22’）的剩餘部份係由矽結晶與氧化矽絕緣 層所形成。壓電副阻抗元件係對矽層摻雜硼成爲1至3 X 1 0 2 1原子/c m之濃度而形成’局濃度擴散層則爲對砂層摻 雜硼成爲1至3xl021原子/cm3之濃度而形成，所以，那 -27- (24) 1277735 些部份在機械特性上，和剩餘部份之矽層完全相同。因 此，在本發明之加速度感測器中，4條的可撓腕21、 2 1 ’、2 2、2 2 '機械特性上完全相同，所以，對於加速度， 產生相同動作與彎曲。 以上說明之本發明的加速度感測器〗〇 〇中，支撐框 11係爲一邊長度3300μηι之正方形，厚度爲600μπι、寬度 爲 450μηι。質量部 13 爲 1000μηι 長度 χι〇〇〇μιη 寬 χ600μιη 厚。各可撓腕爲700μηι長χ6μιη厚，形成於可撓腕上之氧 化矽絕緣層3 1的厚度爲〇 . 5 μπι，鋁金屬配線1 7的厚度爲 0·3 μιη。位於可撓腕之兩側的寬幅部2 1 1、2 1 2爲1 1 Ομτη 長、1 1 Ομιη寬。位於可撓腕中央之窄幅部21 3爲23 0μΐϋ 長，其寬度改變爲'22<μηι至1 1 0 μηι。將位於寬幅部2 1 1、 2 1 3與窄幅部2 1 3之間的傾斜部之長度設爲約1 25 μιη。 改變可撓腕的窄幅部之寬度爲22μιη至1 ΙΟμηι，分別 製作改變寬幅部剖面積（b )對窄幅部剖面積（a )之剖面 積比（b/a )爲1至5之加速度感測器共20個，進行靈敏 度與耐衝擊性之評估。此處，提供靈敏度與耐衝擊性試驗 之加速度感測器，係放入如第1 5圖所示之保護機殼，以 接著劑將支撐框底面固定於保護機殼內的底板上，使質量 部與保護機殼底板間之間隙成爲1 〇μηι。另外，將保護機 殻上部的保護板與質量部上面間的間隙設爲1 〇μηι。靈敏 度係每施加電壓1 V，施加加速度1 G之輸出電壓。檢測於 振動機安裝加速度感測器加上20G的加速度時之X、Υ、 Ζ軸的輸出，針對各別之加速度感測器來檢測X軸方向靈 -28 - (25) 1277735 敏度（Ex )對 Z軸方向靈敏度（Ez )之靈敏度比 (Ex/Ez )，求得該靈敏度比的平均。於檢測靈敏度比 後，使加速度感測器從lm的高度自然落下於100mm厚度 的木板上，來檢測耐衝擊性。如由此高度落下時，會對加 速度感測器施加約1 5 00至2000G之衝擊。使落下後，再 度以振動機加上20G之加速度，檢查輸出之有無。沒有 輸出之加速度感測器，則判定爲已經破壞。 以與可撓腕之寬幅部剖面積（b )對窄幅部剖面積（a) 之剖面積比（b/a)的關係，於第6圖以曲線來表示此處所檢 測之X軸方向靈敏度（Ex )對Z軸方向靈敏度（Ez)之靈敏 度比（Ex/EZ)。剖面積比（b/a)爲1之加速度感測器，係 於可撓腕無窄幅部者，此爲比較例，其之靈敏度比 (Ex/Ez)爲0.83，Z軸方向靈敏度和X軸方向靈敏度相 比，爲非常大。剖面積比（b/a)爲約 2.1，靈敏度比 (Ex/Ez )成爲約1，約3.6的剖面積比，則靈敏度比成爲 1.25。所謂靈敏度比1.25，係X軸方向靈敏度和Z軸方 向靈敏度相比，成爲非常大，剖面積比爲1之情形的Z軸 方向靈敏度/X軸方向靈敏度成爲相反之靈敏度比，並不 理想。因此，在剖面積比（b/a)爲1 .1至3.5之間，知道可 以獲得理想之靈敏度比（Ex/Ez)。在剖面積比（b/a)爲1.5 至2.5之間，成爲更理想之靈敏度比（Ex/Ez )。 關於耐衝擊性試驗的結果，於加上衝擊後沒有輸出的 加速度感測器，在剖面積比爲4.2者當中，20個中爲1 個，剖面積比爲5.0者當中，2 0個中爲4個，但是，在剖 -29· (26) 1277735 面積比爲3 · 5以下者當中，並無破損的。使窄幅部變細’ 而使剖面積比成爲3.6以上時，知道會使靈敏度比和耐衝 擊性惡化。因此，剖面積比（b/a)爲低於3.5時，耐衝擊性 也理想。 實施例2 實施例〗之半導體型加速度感測器中，係製作改變可 φ 撓腕（7〇〇μπι長）的窄幅部長爲200μηι至400μηι之加速 度感測器，而進行靈敏度比（Εχ/Εζ )之評估。將可撓腕 的厚度固定爲5μηα，使壓電阻抗元件的尺寸、金屬配線的 尺寸、氧化矽絕緣層的厚度和實施例1的加速度感測器之 該者相同。另外，將寬幅部的寬設爲1 1 Ομη?、將窄幅部的 寬設爲52.5μπι，使寬幅部剖面積（b )對窄幅部剖面積 (a )之剖面積比（b/a)成爲2.1。 分別準備具有從200μπι至400μηι而改變之窄幅部長 φ 的加速度感測器共20個，將各加速度感測器放入如第1 5 圖所示之保護機殼，以接著劑將支撐框底面固定於保護機 殼內的底板上，使質量部與保護機殼底板間之間隙成爲 1 0 μηι。另外，將保護機殼上部的保護板與質量部上面間 的間隙設爲1 〇μπι。檢測於振動機安裝加速度感測器加上 20G的加速度時之X、Υ、Ζ軸的輸出，針對各別之加速 度感測器來檢測X軸方向靈敏度（Ex)對Ζ軸方向靈敏 度（Ez )之靈敏度比（Ex/Ez )，求得該靈敏度比的平 均。以對於窄幅部長之關係，而於第7圖以曲線來表示靈 -30- (27) 1277735 敏度比（Ex/Ez )。由此曲線可以明白，即使改變窄幅部 長爲200μπι至400μηι，對靈敏度沒有大的影響。 實施例3 實施例3之半導體型加速度感測器，係由實施例1者 於可撓腕的形狀做改變。實施例3之半導體型加速度感測 器的可撓腕，係如第8圖中以斜視圖所示般’寬幅部 φ 2ir、212f的寬與窄幅部213’的寬爲相同，雖爲ΙΙΟμπι 寬，但是，窄幅部21 3’比寬幅部21 1’、212’更薄。將寬幅 部設爲8μχη厚，改變窄幅部的厚度爲1·74μιη至8μτη° 分別製作改變寬幅部剖面積（b )對窄幅部剖面積 (a):之剖面積比（b/a)爲1至4.6之加速度感測器共20 個，進行靈敏度與耐衝擊性之評估。將加速度感測器放入 如第15圖所示之保護機殻，以接著劑將支撐框底面固定 於保護機殼內的底板上，使質量部與保護機殼底板間之間 φ 隙成爲1 0 μηι。另外，將保護機殼上部的保護板與質量部 上面間的間隙設爲1 〇 μπι。檢測於振動機安裝加速度感測 器加上20G的加速度時之X、Υ、Ζ軸的輸出，針對各別 之加速度感測器來檢測X軸方向靈敏度（Ex )對Ζ軸方 向靈敏度（Ez )之靈敏度比（Ex/Ez )，求得該靈敏度比 的平均。 以與可撓腕之寬幅部剖面積（b )對窄幅部剖面積（a) 之剖面積比（b/a)的關係，於第9圖以曲線來表示此處所檢 測之X軸方向靈敏度（Ex )對Z軸方向靈敏度（Ez)之靈敏 -31 - (28) 1277735 度比（Ex/Ez)。由此曲線可以明白，在剖面積比（b/a)爲 超過3.6時，靈敏度比會超過1.25，所以，剖面積比（b/a) 爲1 .1至3.5之間，可以獲得理想之靈敏度比（Ex/Ez)， 在剖面積比（b/a)爲1.5至2.5之間，成爲更理想之靈敏度 比（Ex/Ez )。由第6圖之曲線與第9圖之曲線，得知在 本發明中，爲了使可撓腕的窄幅部的剖面積比寬幅部的剖 面積更小，可以使寬度變小或使厚度變小之其中一種方式 來進行。 關於耐衝擊性試驗的結果，於加上衝擊後沒有輸出的 加速度感測器，在剖面積比爲4.2者當中，20個中爲2 個，剖面積比爲4 · 5者當中，2 0個中爲6個，但是，在剖 面積比爲3·5以下者當中，並無破.損·的；。使窄幅部變細， 而使剖面積比成爲3 · 6以上時，知道會使靈敏度比和耐衝 擊性惡化。 實施例4 實施例4之半導體型加速度感測器，係由實施例3者 於可撓腕的形狀更爲不同。實施例4之半導體型加速度感 測器的可撓腕，係如第1 〇圖中以斜視圖所示般，窄幅部 2 1 3 "的寬度與厚度都比寬幅部2 1 1 ”、2 1 2 ”之該者小。於實 施例4之加速度感測器中，分別製作改變寬幅部剖面積 (b)對窄幅部剖面積（〇之剖面積比（b/a)爲1至4.7之 加速度感測器共2 0個，進行靈敏度與耐衝擊性之評估。 將加速度感測器放入如第1 5圖所示之保護機殼，以接著 -32- (29) 1277735 劑將支撐框底面固定於保護機殼內的底板上，使質量部與 保護機殻底板間之間隙成爲1 Ομπι。另外，將保護機殼上 部的保護板與質量部上面間的間隙設爲1 0 μιη。檢測於振 動機安裝加速度感測器加上20G的加速度時之X、Υ、Ζ 軸的輸出，針對各別之加速度感測器來檢測X軸方向靈 敏度（Ex )對 Z軸方向靈敏度（Ez )之靈敏度比 (Ex/Ez )，求得該靈敏度比的平均。 以與可撓腕之寬幅部剖面積（b )對窄幅部剖面積（a) 之剖面積比（b/a)的關係，於第11圖以曲線來表示此處所 檢測之X軸方向靈敏度（Ex )對Z軸方向靈敏度（Ez)之靈 敏度比（Ex/Ez)。由此曲線可以明白，在剖面積比（b/a) 爲超過3.6時，靈敏度比會超過1.25 .，所以，剖面積比 (b/a)爲1.1至3.5之間，可以獲得理想之靈敏度比 (Ex/Ez)，在剖面積比（b/a)爲1.5至2.5之間，成爲更 理想之靈敏度比（Ex/Ez )。 關於耐衝擊性試驗的結果，於加上衝擊後沒有輸出的 加速度感測器，在剖面積比爲4.3者當中，20個中爲3 個，剖面積比爲4.7者當中，20個中爲5個，但是，在剖 面積比爲3 .5以下者當中，並無破損的。使窄幅部變細， 而使剖面積比成爲3.6以上時，知道會使靈敏度比和耐衝 擊性惡化。 實施例5 準備於實施例1中所使用的半導體型加速度感測器 -33- (30) 1277735 中，可撓腕的寬幅部剖面積（b)對窄幅部剖面積（a )之剖 面積比（b/a )爲約2· 1者共1 〇〇〇個，及第1 6圖所示之 以往的加速度感測器1 〇〇〇個，檢測彼等之靈敏度與偏置 電壓及偏置電壓的溫度特性。於以下之檢測中，將加速度 感測器安裝於第1 5圖所示之保護機殼而進行檢測。於振 動器安裝加速度感測器，將5V之電壓（Vin)施加於全橋式 電路的狀態下，加上20G的加速度，檢測X、Y、Z軸之 φ 輸出，求得每1G之靈敏度。靈敏度係以每1G之輸出電 壓（h mV)來表示。偏置電壓係於全橋式電路施加有5V的 電壓（Vin)之狀態下，使加速度感測器傾斜，使用因傾斜 所產生的1 G之重力加速度來檢測。偏置電壓的溫度特 性，係於施加5 V之驅動電壓下，使加速度感測器傾斜而 加以保持，並放入恆溫槽，改變溫度爲-40 °C至95 °C而加 以檢測。偏置電壓的溫度特性係以加速度換算誤差（Y %)來表示。從基準溫度下之每1G的輸出電壓（h mV)與 φ 在溫度T°C下之偏置電壓（j mV)與25°C之偏置電壓（k mV) 之差所求得。即Υ = ϋ-1〇/1ι(%)。舉例說明時，於每1G之 輸出電壓（h)爲3.6mV之加速度感測器中，在25 °C之偏置 電壓（k)爲2mV、在80°C之偏置電壓（j)爲3mV時，則成爲 Υ = (3-2)/3·6 = 28%。此 28%係指以 80°C 與 25°C 之溫度差， 會產生0.28G之檢測誤差。提供偏置電壓的溫度特性之檢 測的加速度感測器之個數，各爲30個。 第12圖係表示X軸方向靈敏度（每1G的輸出電壓 (h mV) ) 。X、Y、Z軸各別之靈敏度分布爲相同，所以記 -34- (31) 1277735 載X軸方向靈敏度。圖中的白棒係本發明品，黑棒爲以 往品的結果。以往品的加速度感測器之靈敏度的平均値爲 3.6mV，本發明品之靈敏度的平均値爲4.4mV，可獲得約 1 .22倍的靈敏度。在本發明品中，使壓電阻抗元件R短 些，而配置於可撓腕上之應力集中的區域，使壓電阻抗元 件受到的應力比以往品的情形爲大之結果。另外，在本發 明品中，加速度感測器的靈敏度的分布寬度變小。靈敏度 的分布寬度會變小，認爲係使半導體型加速度感測器介由 絕緣層的通孔而以金屬配線加以連接的連接部從可撓腕上 使其不見的結果，藉由使連接部不存在，認爲可將以通孔 形狀、尺寸與金屬配線的厚度等之偏差等爲起因之輸出電 壓的偏差因素予以排除之效果。 ί … 第1 3 Α圖係表示本發明品的偏置電壓的分布，第1 3 Β 圖係表示以往品的偏置電壓的分布。本發明之加速度感測 器的偏置電壓，雖分布於-4.2mV至4.6mV之範圍，但 是，以往品爲-9.7mV至9.5mV之約2倍的分布範圍。藉 由從可撓腕上排除熱膨脹係數與應力不同之材料以複雜的 形狀組合的連接部，於可撓腕的變形時，連接部不會妨礙 其之變形，可使偏置電壓變小。 第14圖係以加速度換算誤差（％)來表示偏置電壓的溫 度特性。第14A圖係本發明品，第14B圖係以往品的結 果。各記載8試料的資料。以25 t：之偏置電壓爲基準， 而以加速度換算誤差（％)來表示改變加速度感測器的溫度 爲-40 °C至95 t時之各溫度的偏置電壓。第14A圖之本發 •35- (32) 1277735 明的加速度感測器和第1 4B圖的以往品比較，加速度換算 誤差之量變成一半以下。另外，以往品其加速度換算誤差 係非直線性改變，但是，在本發明品中，可以近似一次函 數之程度而直線化。能一次函數化，可以簡易的補正電路 而容易地進行補正。減少加速度換算誤差對溫度變化的變 化量，可直線化爲以一次函數來近似變化之程度，認爲係 從可撓腕上使連接部不見的結果。 【圖式簡單說明】 第1圖係本發明之實施例1的半導體型加速度感測器 之平面圖。 第2圖係將第1圖之半導體型加键:度感測器的可撓腕 予以放大表示之斜視圖。 第3A圖係表示本發明之半導體型加速度感測器所使 用之X軸用壓電阻抗元件的全橋式電路，第3B圖係表示 φ 本發明之半導體型加速度感測器所使用之Z軸用壓電阻抗 元件的全橋式電路。 第4A圖係表示X軸方向之可撓腕上的壓電阻抗元件 與金屬配線的平面圖，第4B圖係第4A圖之4B-4B線的 剖面圖。 第5A圖係表示X軸方向方向之其他的可撓腕上的壓 電阻抗元件與金屬配線之平面圖，然後，第5B圖係表示 Y軸方向之可撓腕上的壓電阻抗元件與金屬配線之平面 圖。 -36- (33) 1277735 第6圖係實施例1之半導體型加速度感測器 腕之寬幅部剖面積（b )對窄幅部剖面積（a )之 (b/a)的關係來表示靈敏度（Ex/Ez)之曲線圖。 第7圖係以與窄幅部長之關係來表示靈敏 之曲線圖。 第8圖係表示實施例3之半導體型加速度感 撓腕之斜視圖。 第9圖係實施例3之半導體型加速度感測器 腕之寬幅部剖面積（b )對窄幅部剖面積（a )之 (b/a)的關係來表示靈敏度（Ex/Ez)之曲線圖。Among the four flexible wrists, two of the four flexible wrists extend in one of the two directions of the positive 'intersection' in the upper part of the mass section; the other two extend in the orthogonal direction of the upper part of the mass section. The direction of the flexible wrist is: each of the two ends of the flexible wrist that connects the boundary between the flexible wrist and the support frame or the mass portion, and has a wide φ portion of the cross-sectional area of the longitudinal direction of the flexible wrist, And a narrow portion of the flexible wrist portion that is sandwiched between two wide portions at both ends of the flexible wrist, and the cross-sectional area of the vertical flexible wrist in the longitudinal direction is smaller than the wide sectional portion. Formed in the above four flexible wrists, two flexible wrists, each having: two terminals on the upper surface of the support frame or on the upper portion of the mass, each of which extends from the two ends to the length of the flexible wrist, and is defined to be flexible The piezoelectric impedance element Φ which measures the acceleration component in the longitudinal direction of the wrist in the upper region of the wrist width portion, and the piezoelectric impedance element which measures the acceleration component in the upper direction of the mass portion, and the symmetrical arrangement on the upper surface of the flexible wrist The center line of the wrist can be flexed from the width of one of the flexible wrists a plurality of metal wires extending over the narrow portion and over the other wide portions and extending over the length of the flexible wrist; at least one of the plurality of metal wires is connected thereto At least one of the four piezoelectric barrier elements on the wrist can be flexed, and the other two flexible wrists have the following: -10- (7) 1277735 has two on the support frame or on the upper part of the mass The terminal, each of which extends from the length of the flexible wrist, is defined on the upper surface of the flexible wrist portion, and the piezoelectric impedance element for measuring the acceleration component in the longitudinal direction of the wrist and the flexible wrist Symmetrically disposed on the center line of the flexible wrist, extending from the wide portion of one of the flexible wrists to the upper portion of the narrow portion and over the other wide portions, extending over the length of the flexible wrist a plurality of φ metal wires; at least one of the plurality of metal wires is connected to at least one of the piezoelectric impedance elements disposed on the flexible wrist, and the piezoelectric impedance elements each have: a symmetric configuration a center line on the upper surface of the wrist, and at least two piezoelectric sub-impedance elements extending in a longitudinal direction of the flexible wrist and an end portion of the at least two piezoelectric auxiliary impedance elements connected to the two terminals of the piezoelectric impedance element Two high-density diffusion layers of at least two piezoelectric sub-impedance elements are connected in series between two terminals of the piezoelectric impedance element; and the arrangement of the plurality of metal wires in each of the four flexible wrists It is essentially the same as any other flexible wrist. In the above-mentioned semiconductor type acceleration sensor, the mass portion and the support frame and the plurality of flexible wrists are integrally formed by ruthenium crystal, and the piezoelectric sub-impedance element and the high-concentration diffusion layer are formed to form a crystal of the flexible wrist. A part of the doping period III or V element is formed as a good 0 -11 - (8) 1277735 In the aforementioned semiconductor type acceleration sensor, the other two of the above four flexible wrists are respectively Among the metal wirings having a plurality of strips, two of them are not connected to the dummy metal wiring of any one of the terminals of the piezoelectric impedance element. In the above-described semiconductor type acceleration sensor, the flexible wrist portion of the supporting mass portion has a narrow portion which is smaller than the sectional area of the wide portion located at the end portion of the flexible wrist in the central portion thereof, so Due to the applied acceleration, the mass portion can be easily moved, and the flexible wrist extending in the direction of the applied acceleration can be greatly curved. Therefore, the detection sensitivity can be increased with respect to the acceleration of each axial direction (the direction in which the wrist can be extended) in the upper surface of the mass portion. For example, when the acceleration in the X-axis direction is applied, the flexible wrist that extends in the direction perpendicular to the vertical direction (Y-axis direction) hinders the displacement of the mass portion in the X-axis direction, but the flexible wrist in the Y-axis direction It is provided with a narrow section, so 'the resistance is small. Therefore, it is considered that the detection sensitivity in the X-axis direction can also be increased. • For the flexible wrist in the X-axis direction and the flexible wrist in the γ-axis direction, if the narrow width is set separately, the detection sensitivity in the Y-axis direction and the detection sensitivity in the X-axis direction become larger. As a result, the detection sensitivity in the X-axis direction can be made equal to the detection sensitivity in the γ-axis direction and the detection sensitivity in the Z-axis direction. Detection sensitivity of the X-axis direction and the γ-axis direction when the cross-sectional area (b) of the flexible wrist has a sectional area ratio (b/a) of a narrow section (a) of between 1.1 and 3.5 It is larger than the past, and the sensitivity ratio of the detection sensitivity in the X-axis direction and the x-axis direction to the detection sensitivity in the x-axis direction becomes -12-(10) 1277735. The piezoelectric impedance element is defined in a region of the upper portion of the wide portion of the flexible wrist from the boundary between the flexible wrist and the mass portion or the support frame, and the piezoelectric body is deformed by the acceleration wrist. The impedance element and the piezoelectric impedance element can exhibit excellent sensitivity. Further, the through hole for connecting the piezoelectric impedance element to the metal wiring is not above the flexible wrist, and the bias voltage of the piezoelectric impedance element is small, and the temperature dependency thereof is also small. As described above, the semiconductor-type acceleration sensor of the present invention can improve the acceleration detection sensitivity in each direction (the X-axis direction and the Y-axis direction) in the upper surface of the mass portion, and becomes the acceleration in the direction (Z-axis direction) above the vertical mass portion. The detection sensitivity is at the same level. In addition, the acceleration detection sensitivity is higher than in the past, the bias voltage is small, and the temperature dependence of the bias voltage is also small. [Embodiment] Embodiment 1 A semiconductor type acceleration sensor of the present invention will be described with reference to Figs. 1 to 5 . Fig. 1 is a plan view of a semiconductor type acceleration sensor, and Fig. 2 is a perspective view showing an enlarged wrist of a semiconductor type acceleration sensor. In these figures, the illustration of the metal wiring is omitted. In order to control the thickness of the flexible wrist with high precision, the semiconductor type acceleration sensor of the present invention is produced by using a single crystal substrate of an SOI layer formed of an insulating layer of Si 2 , that is, an SOI wafer. The so-called SOI is an abbreviation for Silicon On Insulator. In this example, -14-(11) 1277735 is formed by forming a Si〇2 insulating layer (about Ιμηι) which is an etch barrier layer on a Si wafer of about 625 μm thick, and forming a thickness of about ΙΟμηι thereon. The wafer of the N-type germanium single crystal layer is used as a substrate. In the semiconductor type acceleration sensor 1 of the embodiment, four L-shaped through holes 150 are formed in a square single crystal substrate having a size of the support frame 11 to form a central mass portion 1 3, with the support frame 11 around it, and the flexible wrists 21, 21', 22, 22' extending between them, the thin portion of the flexible wrist is thinned. Acceleration φ sensor 1 〇〇 corresponds to 2 orthogonal detection axes (X and Υ axis) and the detection axis (Ζ axis) above the vertical acceleration sensor, and each has a piezoelectric on the flexible wrist Impedance elements R1 1, R12, ..., R33, R34. That is, the piezoelectric impedance elements R 1 1 , R1 2, R1 3, and R ί 4 are provided on the flexible arms 21, 21' extending in the X-axis direction to detect the acceleration in the X-axis direction. Piezoelectric impedance elements R2 1 , R22 , R2 3 , and R24 are provided on the flexible arms 22 and 22' extending in the Y-axis direction to detect acceleration in the Y-axis direction. The flexible arms 21, 21' extending in the X-axis direction are further provided with piezoelectric impedance elements R3 1, R3 2, R3 3, and R34 to detect acceleration in the Z-axis direction. In this example, the acceleration in the Z-axis direction is detected by the piezoelectric impedance elements provided on the flexible arms 21 and 21'. However, the element for detecting the acceleration in the Z-axis direction may be provided on the flexible wrist 22, 22' on. The piezoelectric impedance elements that detect the acceleration in the direction of each axis form a full bridge type detection circuit. 4 flexible wrists 21, 2, 22, 22', each of which is a boundary between the flexible wrist and the support frame 11 or the mass portion 13, and is: a wide width having a sectional area of a longitudinally flexible wrist length direction The part 2 1 1 , 2 1 2 , and the flexible wrist part clamped by the two wide parts 2 1 1 , 2 1 2 on both sides of the flexible wrist, -15- (12) 1277735 and vertical The cross-sectional area in the longitudinal direction of the wrist is formed by a narrow portion 2 1 3 which is smaller than the sectional area of the wide portion. Each of the piezoelectric impedance elements R1 1 , R12, ..., R33, and R34 has two terminals (through holes) 11a and lib on the upper surface of the support frame or the mass portion as shown in Figs. 1 and 2 . , ..., 34a and 34b, each extending from the two terminals 11a and lib........ 34a and 34b extending in the longitudinal direction of the flexible wrist 21, 2Γ, 22, 22' The upper portions of the wrist width portions 211, 212 are in the upper region. Each of the piezoelectric impedance elements R1 1 , R12 . . . R33, R34 is symmetrical. The center line is disposed on the flexible wrist 21, 21', 22, 22', and has a length extending to the flexible wrist. Piezoelectric secondary impedance elements (for example, R 1 1 a, R 1 1 b ) having at least two (two in this example) directions. Two ends (through holes) of the piezoelectric anti-interference element, two ends of at least two piezoelectric sub-impedance elements other than 1 lb, ... 34a and 34b, are at a high concentration The diffusion layer is connected between the two terminals 11a and 11b.....34a and 34b of the piezoelectric impedance element, and the at least two piezoelectric sub-impedance elements are connected in series. In the semiconductor type acceleration sensor, the mass portion 13 and the support frame 11 and the flexible arms 21, 2, 22, 22' are integrally formed by ruthenium crystal. One part of the upper surface of the flexible wrist 21, 2Γ, 22, 22' made of ruthenium crystal is doped with a group III or V element of the periodic table, such as boron, to form each piezoelectric impedance element and connect each 2 A high-concentration diffusion layer 41 of a piezoelectric impedance element. Further, the portion of each of the terminals of the piezoelectric impedance element that is connected to the metal via the through hole also serves as a high concentration diffusion layer. A piezoresistor-16-(13) 1277735 anti-component R1 1, R12, R13, R14 disposed on the flexible wrist 2 1 , 2 延伸 extending in the X-axis direction forms a full-bridge circuit as shown in FIG. 3A . The end of the piezoelectric impedance element is connected to the external terminals 1 It, 12t, 13t, and 14t provided on the support frame, and a voltage for detection is applied between the external terminals 12t and 14t, and between the external terminals 1 11 and 1 3 t. Take out the output. The bridge circuit of the piezoelectric impedance elements R2 1 , R22 , R2 3 , and R24 provided on the flexible arms 22 and 22' extending in the Y-axis direction is not shown, but is the same as FIG. 3A. A detection voltage is applied between the external terminals 22t and 2 4t φ on the support frame, and the output is taken out from the external terminals 2 11 and 2 3 t. The 压电-axis piezoelectric impedance elements R3 1 , R32, R33, and R34 are provided on the flexible arms 21 and 21' extending in the X-axis direction to form a full-bridge circuit as shown in Fig. 3 . The end of the piezoelectric impedance element is connected to the external terminals 31t, 32t, 33t, and 34t provided on the support frame, and a detection voltage is applied between the external terminals 32t and 34t, and the output is taken out from the external terminals 3 11 and 3 3 t. . Figures 4 and 5 show the configuration of the piezoelectric impedance element on the inflexible wrist and the details of the metal wiring. Fig. 4A is a view showing a piezoelectric impedance element for the X-axis and the Z-axis on the flexible wrist 21, and Fig. 4B is a cross-sectional view taken along line 4B-4B of Fig. 4A. Fig. 5A shows a piezoelectric impedance element for the X-axis and the Z-axis on the flexible wrist 2, and Fig. 5B shows a piezoelectric impedance element for the Y-axis. In FIG. 4A, at the support frame 11 near the flexible wrist 21, the two X-axis piezoelectric auxiliary impedance elements R1 la, R1 lb extending from the support frame 11 to the flexible wrist 21 are symmetric with respect to The center line of the wrist 21 is flexibly arranged, and the end portions of the two piezoelectric auxiliary impedance elements R11a and R11b on the center of the flexible wrist are connected by a high-concentration diffusion layer 41 to form -17- (14). 1277735 Piezoelectric impedance element R π for X-axis. Further, at the mass portion 13 close to the flexible wrist 21, the two X-axis piezoelectric sub-impedance elements R12a and R12b extending from the mass portion 13 to the flexible wrist 21 are symmetrical to the center of the flexible wrist 21 Arranged in a line, the end portions of the two piezoelectric sub-impedance elements R1 2a and R 1 2b on the center of the flexible wrist are connected by a high-concentration diffusion layer 41 to form a piezoelectric impedance element for the X-axis. R1 2. Further, the piezoelectric sub-impedance element R1 la and the piezoelectric sub-impedance element R1 2b are arranged on the same line on the flexible wrist 21, and the piezoelectric sub-impedance element R1 1 b and the piezoelectric sub-impedance element R 1 2 a are The wrists 2 1 are arranged on the same line. Here, the lengths of the two piezoelectric sub-impedance elements R 1 1 a and R 1 1 b constituting the piezoelectric impedance element R 1 1 and the two piezoelectric sub-impedance elements R12 constituting the piezoelectric impedance element R12. The length of each of a and R12b is about half (about 50 μm) of the length of the piezoelectric impedance element (about 1 〇〇μπι ) used in the conventional acceleration sensor, and the width is almost the same (about 5 μπι ), so The lengths of the piezoelectric impedance elements R11 and R12 formed by the two piezoelectric secondary impedance elements are each about 1 μμη. As shown in the cross-sectional view of the piezoelectric impedance element for the X-axis of Fig. 4, the end portion of the piezoelectric sub-impedance element R 1 1 a on the support frame 11 is opened through the through hole of the yttria insulating layer 31. 1 1 a ' is connected to a metal wiring 17 (shown by a thick broken line) formed on the support frame 11 , and the metal wiring 17 is connected to the external terminal nt on the support frame. Referring again to FIG. 4A, the end portion of the piezoelectric sub-impedance element R Π b on the support frame 11 is connected to the support frame 11 by a through hole Π b ' opened to the yttria insulating layer 31. Metal wiring 1 7 This metal wiring 17 is connected to the -18- (15) 1277735 terminal 12t other than the support frame. The end portion of the mass portion 13 of the piezoelectric sub-impedance element R12a is connected to the metal wiring 1 through the through hole 12a opened to the yttria insulating layer 31, and the metal wiring 17 is connected to the insulating layer 31. The piezoelectric secondary impedance elements R1 2a, R1 lb are parallel and extend along the flexible wrist 21, and are connected to the metal wiring 17 extending from the external terminal 12t at the through hole lib. The end portion of the mass portion 13 of the piezoelectric sub-impedance element R1 2b is connected to the two metal wirings 1 through the through holes 12b of the tantalum oxide insulating layer 31, one of which is attached to the insulating layer 31. The upper portion is parallel to the piezoelectric secondary impedance element R12b' R1 la and extends along the flexible wrist 21 to be connected to the external terminal 13t by avoiding the through hole 1 1 a. The other metal wiring is connected to the piezoelectric sub-impedance element R13a of the piezoelectric impedance element R1 3 on the flexible wrist 2 1 ' on the side opposite to the flexible wrist 21 across the mass portion 13 . The piezoelectric secondary impedance element R1 la and the piezoelectric secondary impedance element R1 lb are attached to the flexible wrist 21 and are symmetric with respect to the center line of the flexible wrist 21, and the piezoelectric secondary impedance element R1 2a and the piezoelectric secondary impedance element 2b are The wrist 21 is symmetric with respect to the center line of the flexible wrist 21, so the through hole 1 1 a of the piezoelectric secondary impedance element R1 la and the through hole 1 of the piezoelectric secondary impedance element R 1 2b are formed on the flexible wrist 21 The metal wiring 17 connected to 2b is connected to the through hole lib of the piezoelectric sub-impedance element R1 lb and the through hole 12a of the piezoelectric sub-impedance element R12a on the flexible wrist 21, and is symmetric. On the centerline of the flexible wrist 2 1 . With regard to the X-axis piezoelectric impedance elements R13 and R14 provided on the flexible wrist 2 1 ', the two piezoelectric secondary impedance elements R13a and R13b and the constituent voltages constituting the piezoelectric impedance element R13 will be described with reference to FIG. 5A. The structure of the two piezoelectric sub-impedance elements R14a and R14b of the electric impedance element R14, and the -19-(17) 1277735 part are connected to the metal wiring 1 by opening the through hole 1 3 b of the yttria insulating layer 31 7. The metal wiring 17 is connected to the iridium oxide insulating layer 31 in parallel with the piezoelectric sub-impedance elements R13b and R14a, and extends at the through hole 14a extending along the flexible wrist 2Γ, and extends to the external terminal 1 4t. The metal wires 17 are connected. The end portion of the piezoelectric sub-impedance element R1 4b on the support frame 11 is connected to the metal wiring 17 formed on the support frame 11 by opening the through hole 14b of the tantalum oxide insulating layer 31. The metal wiring 1 is connected. The 7 series is connected to the external terminal lit on the support frame. Between the through hole 1 3 a on the mass portion 13 and the vicinity of the through hole 14b on the support frame 11, the metal wiring 17 is attached to the yttria insulating layer 31 and the piezoelectric sub-impedance elements R] 3a, R14b Parallel, and disposed along the flexible wrist 21'. However, the metal wiring 17 is the same as the other metal wirings 17 on the flexible wrist 21' in the material, the cross-sectional structure, and the R-inch, and is connected to the through-hole 13 3 a, but is not connected to The through hole 14b is connected to the external terminal 13t on the support frame 11. a portion of the flexible wrist 21' of the metal wiring 17 provided on the piezoelectric secondary impedance elements R1 3a, R 14b, and a flexible wrist 2 of the metal wiring 17 provided on the piezoelectric secondary impedance elements R13b, R1 4a The parts on the 1' are made of the same structure, so the two piezoelectric impedance elements R11 and R12 on the wrist 21 and the wiring thereof can be flexed, and the two piezoelectric impedance elements on the flexible wrist 2 R13, R14 and their wiring systems are identical structures. As shown in Fig. 4A, the Z-axis piezoelectric impedance elements R31 and R32 are provided on the flexible wrist 21. The two piezoelectric sub-impedance elements R3 la and R3 lb constituting the piezoelectric impedance element R31 are each located near the branch - 21 (18) 1277735 frame frame of the flexible wrist 21, and extend from the support frame 11 to be flexible. The wrist 21 is symmetric with respect to the center line of the flexible wrist 21, and is disposed on the outer side of the X-axis piezoelectric auxiliary impedance elements R 1 1 b and R 11 a , so that the center line of the wrist 2 1 is smaller than the piezoelectric pair Each of the impedance elements R11b and R11a is located further away, and the ends of the two piezoelectric sub-impedance elements R3 1 a and R3 1 b on the center of the flexible wrist center are connected by the high-concentration diffusion layer 41 to form the Z-axis. A piezoelectric impedance element R31 is used. Further, each of the two piezoelectric sub-impedance elements R32b and R3 2a constituting the Z-axis piezoelectric impedance element R3 2 is attached to the flexible wrist 13 at a mass 13 and extends from the mass portion 13 to the flexible wrist. 21, symmetrical to the center line of the flexible wrist 21, disposed on the outer side of the X-axis piezoelectric auxiliary impedance elements R 12a, R 1 2b, that is, the center line of the wrist 2 1 is more than the piezoelectric secondary impedance element R12a, R12ba are farther away. The two dust-and-sub-impedance elements R3 1 a and R3 1 b are connected to each other at the center of the flexible wrist center side by a high-concentration diffusion layer 41 to form a Z-axis piezoelectric impedance element R3 2 . The piezoelectric secondary impedance element R3 la and the piezoelectric secondary impedance element R3 2 b are arranged on the same line on the flexible wrist 21, and the piezoelectric secondary impedance element R3 1 b and the piezoelectric secondary impedance element R3 2 a are attached to the flexible wrist. 2 1 is arranged on the same line. Here, the respective lengths of the piezoelectric sub-impedance elements R31a, R31b, R32a, and R32b are about half of the length of the piezoelectric impedance element used in the conventional acceleration sensor, and the width is almost the same. The end portion of the piezoelectric sub-impedance element R3 1 a on the support frame 11 is connected to the metal wiring 17 formed on the support frame 11 by opening the through hole 3 1 a of the tantalum oxide insulating layer 31. This metal wiring 17 is connected to the external terminal 3 11 on the support frame. The end portion of the support frame 1 1 -22- (19) 1277735 of the piezoelectric secondary impedance element R3 1 b is connected to the support frame 1 1 by opening the through hole 3 1 b of the yttria insulating layer 31 The upper metal wiring 17 is connected to the external terminal 32t on the support frame. The end portion of the mass portion 13 of the piezoelectric sub-impedance element R3 2a is connected to the metal wiring 17 by opening the through hole 32a of the yttria insulating layer 31, and the metal wiring 17 is attached to the insulating layer 31. The piezoelectric sub-impedance elements R3 2a and R31b extend parallel to the flexible wrist 21, and are connected to the metal wiring 17 extending from the external terminal 32t at the through hole 31b. The end portion of the mass portion 13 of the piezoelectric secondary impedance element R3 2b is connected to the metal wiring 17 by opening the through hole 3 2b of the tantalum oxide insulating layer 31, and the metal wiring is on the insulating layer 31. The piezoelectric secondary impedance elements R3 2b and R3 la are parallel and extend along the flexible wrist 21, and are connected to the external terminal .33 t while avoiding the through hole 3 1 a. The piezoelectric secondary impedance element R3 la and the piezoelectric secondary impedance element R3 lb are attached to the flexible wrist 21, are symmetric with respect to the center line of the flexible wrist 21, and the piezoelectric secondary impedance element R3 2b and the piezoelectric secondary impedance element R3 2a are The flexible wrist 21 is symmetric with respect to the center line of the flexible wrist 21, so that the through hole 3 1a of the piezoelectric secondary impedance element R3 1 a and the through hole of the piezoelectric secondary impedance element R32b are formed on the flexible wrist 21 The metal wiring 17 connected to 32b and the metal wiring 17a that connects the through hole 3 1b of the piezoelectric sub-impedance element R3 1 b and the through hole 32a of the piezoelectric sub-impedance element R32a on the flexible wrist 21 It is symmetrical to the center line of the flexible wrist 21 . For details of the Z-axis piezoelectric impedance elements R3 3 and R34 provided on the flexible wrist 21', refer to FIG. 5A to form the two piezoelectric sub-impedance elements R33a and R33b of the piezoelectric impedance element R33 and the piezoelectric element. The structure of the two piezoelectric sub-impedance elements R3 4a, R3 4b of the impedance element R34 is connected to the -23-(20) 1277735 line, and the piezoelectric impedance element for the Z-axis provided on the flexible wrist 21 The structures of the piezoelectric sub-impedance elements R32b and R32a and the piezoelectric sub-impedance elements R3 1 b and R3 1 a of R3 2 and R31 are identical to each other. As described in detail above, the structure of the piezoelectric resistive elements R11 and R12 for the X-axis formed on the flexible wrist 21 and the structure of the metal wiring 17 between the flexible wrists 21 are formed and flexible. The structure of the piezoelectric impedance elements R14 and R13 for the X-axis on the wrist 21' and the metal wirings 177 and 1 connected to the flexible wrist 21' are substantially the same, and are formed in the same manner. The structure of the Z-axis piezoelectric impedance elements R31 and R32 on the wrist 21 and the structure of the metal wiring 17 connected between the flexible wrists 21 and the Z-axis formed on the flexible wrist 21' The structure of the voltage-resistance elements R3 4 and R33 and the metal wiring 17 between the flexible wrists 21' are substantially the same. Therefore, the flexible wrist 21 and the flexible wrist 2 1 'substantially The same is true, and the same action and bending are performed in the same manner or symmetrically from the center of the mass portion 13 in accordance with the acceleration applied from the outside. In Fig. 5B, at the support frame 11 near the flexible wrist 22, The two Y-axis extending from the support frame 11 to the flexible wrist 22 are symmetric with the piezoelectric secondary impedance elements R21a, R21b The center line of the wrist 22 is flexibly arranged, and the end portions of the two piezoelectric sub-impedance elements R21a and R2 lb on the center of the flexible wrist center are connected by a high-concentration diffusion layer 41 to form a piezoelectric impedance for the Y-axis. The element R21. In addition, the two Y-axis piezoelectric sub-impedance elements R2 2a, R22b extending from the mass portion 13 to the flexible arm 22 are symmetric with respect to the mass portion 13 near the flexible wrist 22 The mid--24-(21) 1277735 of the flexible wrist 22 is placed in the center line, and the end portions of the two piezoelectric sub-impedance elements R22 a and R2 2b on the center of the flexible wrist are centered by the high-concentration diffusion layer 4 1 . Connected to form a piezoelectric impedance element R 2 2 for the Y-axis. Further, the piezoelectric secondary impedance element R21 a and the piezoelectric secondary impedance element R22b are arranged on the same line on the flexible wrist 22, and the piezoelectric secondary impedance element R2 lb and the piezoelectric sub-impedance element R2 2 a are arranged on the same line on the flexible arm 22. Here, the respective lengths of the piezoelectric sub-impedance elements R21a, R21b, R22a, and R2 2b are conventionally added φ The length of the piezoelectric impedance element used by the speed sensor is about half and the width is almost the same. ' Piezoelectric secondary impedance element R2 1 a The end portion of the support frame 1 is connected to the metal wiring 17 formed on the support frame 11 by opening the through hole 2 1 a of the yttria insulating layer 31, and the metal wiring 17 is connected to the support frame. The upper external terminal 21t. The end portion of the piezoelectric sub-impedance element R21b on the support frame 11 is connected to the metal formed on the support frame 11 by opening the through hole 2 1 b of the yttria insulating layer 31 Wiring 1 7 This metal wiring φ 1 7 is connected to the external terminal 22t on the support frame. The end portion of the mass portion 13 of the piezoelectric sub-impedance element R22a is connected to the metal wiring 17 by opening the through hole 22a of the yttria insulating layer 31, and the metal wiring 17 is attached to the insulating layer 31. The piezoelectric secondary impedance elements R22a, R2lb are parallel and extend along the flexible wrist 22, and are connected to the metal wiring 17 extending from the external terminal 22t at the through hole 21b. The end portion of the mass portion 13 of the piezoelectric secondary impedance element R22b is connected to the two metal wirings 1 through the through holes 22b of the tantalum oxide insulating layer 31, and one of the metal wirings is on the insulating layer 31. The upper side is parallel to the piezoelectric sub-impedance elements R22b and R21a, and extends along the bendable arm 22 of the -25-(22) 1277735, and is connected to the external terminal 23t so as to avoid the through-hole 21a. Further, a metal wiring is connected to the piezoelectric sub-impedance element R23a of the piezoelectric impedance element R23 on the flexible arm 22' on the opposite side of the flexible wrist 22 across the mass portion 13. The piezoelectric secondary impedance element R21a and the piezoelectric secondary impedance element R21b are attached to the flexible wrist 22 and are symmetric with respect to the center line of the flexible wrist 22, and the piezoelectric secondary impedance element R22a and the piezoelectric secondary impedance element R22b are attached to the flexible wrist 22 The symmetry is perpendicular to the center line of the flexible wrist 22, so that the through hole 2 1 a of the piezoelectric secondary impedance element R2 1 a and the through hole 22 b of the piezoelectric secondary impedance element R22b are connected to the flexible wrist 21 φ The metal wiring 17 is symmetrical to the flexible wrist with the through hole 2 1 b of the piezoelectric secondary impedance element R2 1 b and the through hole 22a of the piezoelectric secondary impedance element R22a on the flexible wrist 22 22 centerline. 4 ... 构造 The structure of the Y-axis piezoelectric impedance elements R21 and R22 provided on the flexible arm 22 and the metal wires 17 connecting the same, and the X-axis pressure provided on the flexible wrist 21 The structures of the electrical impedance elements R11 and R12 and the metal wirings connected thereto are substantially the same. The yttrium oxide insulating layer 31 on the flexible wrist 22 is symmetric with respect to the center line of the flexible wrist 22, and the metal wiring 17 and the connecting through hole 2 1 b, 22a in the vicinity of the connecting through hole 22b and the through hole 21a. The outer side of the metal wiring 1 7 is such that the center line of the wrist 22 is farther away from the metal wiring, and the dummy metal wirings 17d and 17d' having the same structure, material, and size as the metal wiring 17 are provided. The dummy metal wiring 17d is provided at a position corresponding to the flexible wrist 22 on the position where the flexible wrist 21 is provided with the metal wiring 17 connecting the through holes 31b and 32a, and the dummy metal wiring 17d' is provided -26- (23 1277735 is placed at a position corresponding to the flexible wrist 22 on which the flexible wrist 21 is provided with a position connecting the through hole 32b and the metal wiring 17 near the through hole 31a. Further, the dummy metal wires 17d and 17d' are interposed between the support frame 11 and the mass portion 13, and extend across the entire length of the flexible wrist 212. The details of the Y-axis piezoelectric impedance elements R23 and R24 provided on the flexible arm 22' are not shown, but the two piezoelectric sub-impedance elements R23a and R23b constituting the piezoelectric impedance element R23 and the constituent voltage are formed. The structure of the two piezoelectric auxiliary impedance elements R24a and R24b of the electrical impedance element R24 and the wiring therebetween, and the piezoelectric secondary impedance of the piezoelectric impedance elements R14 and R13 for the X-axis provided on the flexible wrist 2 Since the structures of the elements R14a, R14b, R1 3a, and R1 3b and the wirings thereof are the same, it should be understood from the above description. The flexible wrist 22' is the same as the flexible wrist 22 and has two virtual metal wires. Therefore, the flexible wrist 22 and the flexible wrist 22' are substantially identical, and the same motion and bending are generated similarly or symmetrically with respect to the center of the mass portion based on the acceleration applied from the outside. For example, when the flexible wrist 21 (21') and the flexible wrist 22 (22') are compared, the former has eight piezoelectric secondary impedance elements, and has four high-concentration diffusion layers connected to each other, and the latter has four The piezoelectric secondary impedance element has two high-concentration diffusion layers that are connected to each other. Further, both the flexible wrist 21 and the flexible wrist 22 have four substantially identical metal wiring or virtual metal wiring. The remainder of the flexible wrist 21 ( 2 Γ ) and 22 (22') is formed by a ruthenium crystal and a yttria insulating layer. The piezoelectric secondary impedance element is formed by doping the lanthanum layer with boron at a concentration of 1 to 3×10 2 1 atoms/cm to form a local concentration diffusion layer, and doping the sand layer with boron to a concentration of 1 to 3×10 2 atoms/cm 3 . Formed, so that -27- (24) 1277735 parts are mechanically identical to the remaining layers. Therefore, in the acceleration sensor of the present invention, the four flexible arms 21, 2 1 ', 2 2, 2 2 ' are identical in mechanical characteristics, so that the same motion and bending are generated for the acceleration. In the acceleration sensor of the present invention described above, the support frame 11 is a square having a length of 3300 μm, a thickness of 600 μm, and a width of 450 μm. The mass part 13 is 1000μηι length χι〇〇〇μιη width χ600μιη thick. Each of the flexible wrists is 700 μm long and 6 μm thick, and the thickness of the yttria insulating layer 31 formed on the flexible wrist is 〇 5 μm, and the thickness of the aluminum metal wiring 17 is 0·3 μιη. The wide portions 2 1 1 and 2 1 2 located on both sides of the flexible wrist are 1 1 Ομτη long and 1 1 Ομιη wide. The narrow portion 21 3 at the center of the flexible wrist is 23 0 μΐϋ long and its width is changed to '22 <μηι to 1 1 0 μηι. The length of the inclined portion between the wide portion 2 1 1 , 2 1 3 and the narrow portion 2 1 3 is set to be about 1 25 μm. The width of the narrow portion of the flexible wrist is changed from 22 μm to 1 ΙΟμηι, and the sectional area ratio (b/a) of the cross-sectional area (b) of the wide-width portion to the narrow-sectional area (a) is 1 to 5, respectively. A total of 20 accelerometers were evaluated for sensitivity and impact resistance. Here, the acceleration sensor providing the sensitivity and impact resistance test is placed in a protective casing as shown in FIG. 5, and the bottom surface of the support frame is fixed on the bottom plate in the protective casing with an adhesive to make the quality The gap between the part and the bottom plate of the protective case becomes 1 〇μηι. In addition, the gap between the protective plate on the upper part of the protective case and the upper surface of the mass portion is set to 1 〇μηι. Sensitivity applies an output voltage of 1 G per applied voltage of 1 V. Detects the X, Υ, and Ζ axis outputs of the vibration sensor with the acceleration sensor plus 20G acceleration, and detects the X-axis direction for each acceleration sensor. - (25) 1277735 Sensitivity (Ex The sensitivity ratio (Ex/Ez) to the sensitivity (Ez) in the Z-axis direction is obtained by averaging the sensitivity ratio. After detecting the sensitivity ratio, the acceleration sensor was naturally dropped from the height of lm on a board of 100 mm thickness to detect impact resistance. When the height is dropped, an impact of about 1 500 to 2000 G is applied to the acceleration sensor. After the drop is made, the acceleration of the vibration is added to the vibration machine to check the presence or absence of the output. If there is no output acceleration sensor, it is judged to have been destroyed. The X-axis direction detected here is shown by a curve in FIG. 6 in relation to the sectional area ratio (b/a) of the wide-area sectional area (b) of the flexible wrist to the narrow-sectional sectional area (a). Sensitivity (Ex) sensitivity ratio (Ex/EZ) to sensitivity in the Z-axis direction (Ez). An acceleration sensor with a sectional area ratio (b/a) of 1 is used for a non-narrow section of a flexible wrist. This is a comparative example with a sensitivity ratio (Ex/Ez) of 0.83, sensitivity in the Z-axis direction and X. The sensitivity in the axial direction is very large. The sectional area ratio (b/a) is about 2.1, and the sensitivity ratio (Ex/Ez) is about 1, and the sectional area ratio of about 3.6 is 1.25. The sensitivity ratio is 1.25, and the X-axis direction sensitivity is significantly larger than the Z-axis direction sensitivity. When the cross-sectional area ratio is 1, the Z-axis direction sensitivity/X-axis direction sensitivity is opposite, which is not preferable. Therefore, it is known that the ideal sensitivity ratio (Ex/Ez) can be obtained between the sectional area ratio (b/a) of 1.1 to 3.5. The ratio of the cross-sectional area (b/a) is between 1.5 and 2.5, which is a more desirable sensitivity ratio (Ex/Ez). As for the results of the impact resistance test, the acceleration sensor that has no output after the impact is added, among the two of the cross-sectional area ratios of 4.2, one of the 20, and the cross-sectional area ratio of 5.0, among the 20 4, however, among the sections -29. (26) 1277735 with an area ratio of 3 · 5 or less, there is no damage. When the narrow portion is made thinner and the cross-sectional area ratio is 3.6 or more, it is known that the sensitivity ratio and the impact resistance are deteriorated. Therefore, when the sectional area ratio (b/a) is less than 3.5, the impact resistance is also satisfactory. Embodiment 2 In the semiconductor type acceleration sensor of the embodiment, an acceleration sensor with a narrow width of 200 μm to 400 μm is changed, and the sensitivity ratio is made (Εχ/ Εζ ) Evaluation. The thickness of the flexible wrist was fixed to 5 μηα, and the size of the piezoelectric impedance element, the size of the metal wiring, and the thickness of the tantalum oxide insulating layer were the same as those of the acceleration sensor of the first embodiment. Further, the width of the wide portion is set to 1 1 Ομη?, the width of the narrow portion is set to 52.5 μm, and the sectional area ratio of the sectional area (b) of the wide portion to the sectional area (a) of the narrowed portion (b) /a) becomes 2.1. A total of 20 acceleration sensors having a narrow width φ changed from 200 μm to 400 μm were prepared, and each acceleration sensor was placed in a protective case as shown in Fig. 5, and the bottom surface of the support frame was adhered with an adhesive. It is fixed on the bottom plate inside the protective case, so that the gap between the mass part and the bottom plate of the protective case becomes 10 μm. In addition, the gap between the protective plate on the upper part of the protective case and the upper surface of the mass portion is set to 1 〇μπι. Detects the X, Υ, and Ζ axis outputs of the vibration sensor with the acceleration sensor plus 20G acceleration, and detects the X-axis direction sensitivity (Ex) versus the 方向 axis direction sensitivity (Ez) for each acceleration sensor. The sensitivity ratio (Ex/Ez) is used to find the average of the sensitivity ratios. In relation to the narrow minister, the graph _-(27) 1277735 sensitivity ratio (Ex/Ez) is represented by a curve in Fig. 7. From this curve, it can be understood that even if the narrow portion length is changed from 200 μm to 400 μm, there is no large influence on the sensitivity. Embodiment 3 The semiconductor type acceleration sensor of Embodiment 3 is changed by the shape of the flexible wrist of Embodiment 1. The flexible wrist of the semiconductor type acceleration sensor of the third embodiment is the same as the width of the wide portion and the narrow portion 213' of the wide portions φ 2ir and 212f as shown in a perspective view in Fig. 8, although ΙΙΟμπι is wide, however, the narrow portion 21 3' is thinner than the wide portions 21 1 ', 212'. The wide portion is set to a thickness of 8 μχη, and the thickness of the narrow portion is changed from 1·74 μm to 8 μτη°, and the cross-sectional area ratio (b) of the wide-width section (a) to the narrow-width section (a) is separately produced (b/ a) A total of 20 accelerometers from 1 to 4.6 are evaluated for sensitivity and impact resistance. Insert the acceleration sensor into the protective case as shown in Figure 15, and fix the bottom surface of the support frame to the bottom plate in the protective case with the adhesive, so that the gap between the mass part and the bottom plate of the protection case becomes 1 0 μηι. In addition, the gap between the protective plate on the upper part of the protective case and the upper part of the mass portion is set to 1 〇 μπι. Detects the output of the X, Υ, and Ζ axes when the vibration sensor is installed with the acceleration sensor plus 20G acceleration. The X-axis direction sensitivity (Ex) is detected for the x-axis direction sensitivity (Ez) for each acceleration sensor. The sensitivity ratio (Ex/Ez) is used to find the average of the sensitivity ratios. The X-axis direction detected here is shown by a curve in FIG. 9 in relation to the sectional area ratio (b/a) of the cross-sectional area (b) of the wide section of the flexible wrist to the cross-sectional area (a) of the narrow section. Sensitivity (Ex) Sensitivity to Z-axis sensitivity (Ez) -31 - (28) 1277735 degrees ratio (Ex/Ez). From this curve, it can be understood that when the sectional area ratio (b/a) is more than 3.6, the sensitivity ratio exceeds 1.25, so that the sectional area ratio (b/a) is between 1.1 and 3.5, and the desired sensitivity can be obtained. The ratio (Ex/Ez) is between 1.5 and 2.5 in the sectional area ratio (b/a), which is a more desirable sensitivity ratio (Ex/Ez). From the curve of Fig. 6 and the curve of Fig. 9, it is understood that in the present invention, in order to make the sectional area of the narrow portion of the flexible wrist smaller than the sectional area of the wide portion, the width can be made smaller or thicker. One of the ways to get smaller. As for the results of the impact resistance test, the acceleration sensor that has no output after the impact is added, of which 2 out of 20 are in the cross-sectional area ratio of 4.2, and the cross-sectional area ratio is 4 · 5 There are six in the middle, but among those with a sectional area ratio of 3.5 or less, there is no damage. When the narrow portion is made thinner, and the cross-sectional area ratio is 3.6 or more, it is known that the sensitivity ratio and the impact resistance are deteriorated. [Embodiment 4] The semiconductor type acceleration sensor of the fourth embodiment is different from the shape of the flexible wrist by the third embodiment. The flexible wrist of the semiconductor type acceleration sensor of Embodiment 4 is as shown in a perspective view in the first drawing, and the width and thickness of the narrow width portion 2 1 3 " are larger than the width portion 2 1 1 ” , 2 1 2 ” The one is small. In the acceleration sensor of the fourth embodiment, an acceleration sensor for changing the sectional area of the wide portion (b) to the sectional area of the narrow portion (the sectional area ratio (b/a) of the 〇 is 1 to 4.7, respectively. Evaluation of sensitivity and impact resistance. Place the acceleration sensor in the protective case as shown in Fig. 15. Attach the bottom surface of the support frame to the protective case with -32- (29) 1277735. On the inner bottom plate, the gap between the mass portion and the bottom plate of the protective case is 1 Ομπι. The gap between the protective plate on the upper part of the protective case and the upper surface of the mass portion is set to 10 μm. The X, Υ, and Ζ axis outputs of the detector plus 20G acceleration are used to detect the sensitivity ratio of the X-axis direction sensitivity (Ex) to the Z-axis direction sensitivity (Ez) for each acceleration sensor (Ex/Ez The average of the sensitivity ratio is obtained. The relationship between the cross-sectional area ratio (b) of the wide-section cross-sectional area (b) of the flexible wrist and the cross-sectional area (a) of the narrow-width section is shown in Fig. 11 The curve shows the sensitivity of the X-axis direction sensitivity (Ex) detected here to the Z-axis sensitivity (Ez) Ratio (Ex/Ez). From this curve, it can be understood that when the sectional area ratio (b/a) is more than 3.6, the sensitivity ratio exceeds 1.25. Therefore, the sectional area ratio (b/a) is between 1.1 and 3.5. The ideal sensitivity ratio (Ex/Ez) can be obtained, and the ratio of the cross-sectional area (b/a) is between 1.5 and 2.5, which is a more desirable sensitivity ratio (Ex/Ez). In addition, there is no acceleration sensor after the impact. Among the 4.3 area-to-area ratios, 3 out of 20, and the cross-sectional area ratio of 4.7 is 5 out of 20, but the area ratio is In the case of 5.3 or less, the thickness is not broken. When the cross-sectional area ratio is 3.6 or more, it is known that the sensitivity ratio and the impact resistance are deteriorated. Example 5 Prepared in Example 1. In the semiconductor type acceleration sensor used in -33- (30) 1277735, the sectional area ratio (b) of the flexible portion of the wide section (b) to the narrow section (a) is about 2 · 1 in total, and 1 of the previous accelerometers shown in Figure 16, to detect their sensitivity and bias voltage and bias The temperature characteristic of the pressure. In the following test, the acceleration sensor is mounted on the protective case shown in Fig. 15. The acceleration sensor is mounted on the vibrator, and a voltage of 5 V (Vin) is applied to In the state of the full-bridge circuit, the acceleration of 20G is added to detect the φ output of the X, Y, and Z axes, and the sensitivity per 1G is obtained. The sensitivity is expressed by the output voltage per 1G (h mV). The acceleration sensor is tilted in a state where a full-bridge circuit is applied with a voltage of 5 V (Vin), and is detected using a gravity acceleration of 1 G due to the tilt. The temperature characteristic of the bias voltage is such that when the driving voltage of 5 V is applied, the acceleration sensor is tilted and held, and placed in a thermostat, and the temperature is changed from -40 ° C to 95 ° C to be detected. The temperature characteristic of the bias voltage is expressed by the acceleration conversion error (Y %). The difference between the output voltage (h mV) per 1 G at the reference temperature and the bias voltage (j mV) at φ at temperature T ° C and the bias voltage (k mV ) at 25 ° C was obtained. That is Υ = ϋ-1〇/1ι (%). For example, in an acceleration sensor with an output voltage (h) of 3.6 mV per 1 G, the bias voltage (k) at 25 °C is 2 mV, and the bias voltage (j) at 80 °C is 3 mV. Then, it becomes Υ = (3-2)/3·6 = 28%. This 28% means that the temperature difference between 80 ° C and 25 ° C will produce a detection error of 0.28 G. The number of acceleration sensors for detecting the temperature characteristics of the bias voltage is 30 each. Figure 12 shows the sensitivity in the X-axis direction (output voltage per 1G (h mV)). The sensitivity distributions of the X, Y, and Z axes are the same, so note the sensitivity of the X-axis direction of -34- (31) 1277735. The white stick in the figure is the product of the present invention, and the black stick is the result of the previous product. The sensitivity of the conventional acceleration sensor has an average 値 of 3.6 mV, and the sensitivity of the product of the present invention has an average 値 of 4.4 mV, and a sensitivity of about 1.22 times is obtained. In the present invention, the piezoelectric impedance element R is made shorter, and the stress placed on the flexible wrist is concentrated, so that the stress applied to the piezoelectric impedance element is larger than that of the conventional product. Further, in the present invention, the distribution width of the sensitivity of the acceleration sensor becomes small. The distribution width of the sensitivity is reduced, and it is considered that the connection portion of the semiconductor-type acceleration sensor that is connected by the metal wiring through the through hole of the insulating layer is made to be invisible from the flexible wrist by the connection portion If it does not exist, it is considered that the deviation of the output voltage due to the variation in the shape and size of the through hole, the thickness of the metal wiring, or the like can be excluded.第 ... The 1 3 Α diagram shows the distribution of the bias voltage of the present invention, and the 1 3 Β diagram shows the distribution of the bias voltage of the conventional product. The bias voltage of the acceleration sensor of the present invention is distributed in the range of -4.2 mV to 4.6 mV, but the conventional product has a distribution range of about 2 times from -9.7 mV to 9.5 mV. By excluding a connecting portion in which a material having a thermal expansion coefficient different from a stress is combined in a complicated shape from the flexible wrist, the connecting portion does not hinder the deformation of the flexible wrist, and the bias voltage can be made small. Fig. 14 shows the temperature characteristics of the bias voltage by the acceleration conversion error (%). Fig. 14A is a product of the present invention, and Fig. 14B is a result of a conventional product. Each of the data of the 8 samples is described. Based on the bias voltage of 25 t:, the acceleration conversion error (%) is used to indicate the bias voltage at each temperature when the temperature of the acceleration sensor is changed from -40 °C to 95 t. In the first shot of the 14A, the acceleration sensor of the 35-(32) 1277735 is compared with the conventional product of the 1st 4B, and the amount of the acceleration conversion error is less than half. Further, in the conventional product, the acceleration conversion error is not linearly changed. However, in the present invention, it is possible to linearize by approximating the degree of the primary function. It can be functionalized once and can be easily corrected by simply correcting the circuit. Reducing the amount of change in the acceleration conversion error to the temperature change can be linearized to a degree that approximates the change by a linear function, and is considered to be a result of making the connection portion invisible from the flexible wrist. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a semiconductor type acceleration sensor according to a first embodiment of the present invention. Fig. 2 is an enlarged perspective view showing the flexible wrist of the semiconductor type key of the first figure: the degree sensor. 3A is a full-bridge circuit of a piezoelectric impedance element for X-axis used in the semiconductor type acceleration sensor of the present invention, and FIG. 3B is a view showing a Z-axis used by the semiconductor type acceleration sensor of the present invention. A full bridge circuit using piezoelectric impedance elements. Fig. 4A is a plan view showing a piezoelectric impedance element and a metal wiring on a flexible wrist in the X-axis direction, and Fig. 4B is a cross-sectional view taken along line 4B-4B of Fig. 4A. Fig. 5A is a plan view showing the piezoelectric impedance element and the metal wiring on the other flexible wrist in the X-axis direction, and then Fig. 5B shows the piezoelectric impedance element and the metal wiring on the flexible wrist in the Y-axis direction. Floor plan. -36- (33) 1277735 Fig. 6 is a diagram showing the relationship between the wide cross-sectional area (b) of the semiconductor type acceleration sensor wrist of the first embodiment and the (b/a) relationship of the narrow section sectional area (a). Sensitivity (Ex/Ez) graph. Figure 7 shows a sensitive graph in relation to a narrow minister. Fig. 8 is a perspective view showing the semiconductor type acceleration sensing wrist of the third embodiment. Fig. 9 is a graph showing the sensitivity (Ex/Ez) of the relationship between the wide-section sectional area (b) of the semiconductor-type acceleration sensor wrist of the third embodiment and the (b/a) of the narrow-sectional sectional area (a). Graph.

第10圖係表示實施例4之半導體型加速度 可撓腕之斜視圖。 « V 第1 1圖係實施例4之半導體型加速度感測 撓腕之寬幅部剖面積（b )對窄幅部剖面積（a ) 比（b/a)的關係來表示靈敏度（Ex/Ez)之曲線圖< 第12圖係針對本發明之半導體型加速度感 往產品，來表示靈敏度的個數比率之曲線圖。 第13A圖係針對本發明之半導體型加速度 表示偏置電壓的分布曲線圖，第1 3 B圖係針對以 表示偏置電壓的分布曲線圖。 第14A圖係針對本發明之半導體型加速度 以加速度換算誤差（％ )與溫度之關係來表示偏 溫度特性之曲線圖，第1 4B圖係針對以往產品， 換算誤差（％ )與溫度之關係來表示偏置電壓的 ，以可撓_ 剖面積比 度（Ex/Ez) 測器的可 ，以可撓 剖面積比 感測器的 器，以可 之剖面積 〇 測器與以 感測器來 往產品來 感測器， 置電壓的 以加速度 溫度特性 -37- (34) 1277735 >曲線圖。 第1 5圖係表示以往的加速度感測器的分解斜視圖。 第1 6圖係以往的加速度感測器的平面圖。 第17圖係以與質量部厚度的關係來表示以往的加速 度感測器之X軸的靈敏度與Z軸的靈敏度之曲線圖。 [主要元件符號說明】 1 1 :支撐框 Ht :外部端子 12t :外部端子 1 3 :質量部 13t :外部端子 14t :外部端子 1 7 ·金屬配線 21、 21’ ：可撓腕 22、 22’ ：可撓腕 21t、22t、23t、24t :外部端子 2 1 a、2 1 b :通孔 22a 、 22b :通孔 3 1 :氧化矽絕緣層 3 11、32t、33t、34t :外部端子 4 1 :高濃度擴散層 100:半導體型加速度感測器 Rl 1〜R14 :壓電阻抗元件 -38 - (35)1277735Fig. 10 is a perspective view showing the semiconductor type acceleration movable wrist of the fourth embodiment. « V Figure 11 shows the sensitivity of the wide-section cross-sectional area (b) of the semiconductor-type acceleration-sensing wrist of the fourth embodiment to the ratio (b) of the narrow-section area (b/a) (Ex/ Graph of Ez) < Fig. 12 is a graph showing the ratio of the number of sensitivity for the semiconductor type acceleration sensing product of the present invention. Fig. 13A is a distribution diagram showing the bias voltage for the semiconductor type acceleration of the present invention, and Fig. 13B is for the distribution curve showing the bias voltage. Fig. 14A is a graph showing the bias temperature characteristic for the semiconductor type acceleration of the present invention in terms of acceleration conversion error (%) and temperature, and Fig. 14B shows the relationship between the conversion error (%) and temperature for the conventional product. Indicates the bias voltage, which can be used as a flexible/area ratio (Ex/Ez) detector, with a flexible sectional area ratio sensor, and the cross-sectional area of the detector and the sensor The product comes to the sensor, setting the voltage to the acceleration temperature characteristic -37- (34) 1277735 > graph. Fig. 15 is an exploded perspective view showing a conventional acceleration sensor. Figure 16 is a plan view of a conventional acceleration sensor. Fig. 17 is a graph showing the sensitivity of the X-axis of the conventional acceleration sensor and the sensitivity of the Z-axis in relation to the thickness of the mass portion. [Main component symbol description] 1 1 : Support frame Ht : External terminal 12 t : External terminal 1 3 : Mass portion 13 t : External terminal 14 t : External terminal 1 7 · Metal wiring 21 , 21 ' : Flexible wrist 22 , 22 ' : Flexible wrist 21t, 22t, 23t, 24t: external terminal 2 1 a, 2 1 b : through hole 22a, 22b: through hole 3 1 : yttria insulating layer 3 11 , 32t, 33t, 34t : external terminal 4 1 : High concentration diffusion layer 100: semiconductor type acceleration sensor Rl 1 to R14 : piezoelectric impedance element -38 - (35) 1277735

R 1 1 a、R 11 b :壓電副阻抗元件 R12a、R12b :壓電副阻抗元件 R 1 3 a、R 1 3 b :壓電副阻抗元件 R14a、R14b :壓電副阻抗元件 R21〜R24 :壓電阻抗元件 R21a、R21b :壓電副阻抗元件 R22a、R22b :壓電副阻抗元件 R31〜R34 :壓電阻抗元件 R3 1a、R3 1b :壓電副阻抗元件 R3 2a、R3 2b :壓電副阻抗元件 -39-R 1 1 a, R 11 b : Piezoelectric secondary impedance elements R12a, R12b : Piezoelectric secondary impedance elements R 1 3 a, R 1 3 b : Piezoelectric secondary impedance elements R14a, R14b : Piezoelectric secondary impedance elements R21 to R24 : Piezoelectric impedance elements R21a, R21b: Piezoelectric secondary impedance elements R22a, R22b: Piezoelectric secondary impedance elements R31 to R34: Piezoelectric impedance elements R3 1a, R3 1b : Piezoelectric secondary impedance elements R3 2a, R3 2b : Piezoelectric Secondary impedance element -39-

Claims (1)

p1修(更)正替換頁 1277735 十、申請專利範圍 第94 1 3 24 70號專利申請案 中文申請專利範圍修正本 民國9 5年8月2 4日修正 1 · 一種半導體型加速度感測器，其特徵爲：具有， 位於中央，且具有上面之質量部、及P1 repair (more) is replacing page 1277735 X. Patent application No. 94 1 3 24 70 Patent application Chinese patent application scope revision The Republic of China August 24, 24 correction 1 · A semiconductor type acceleration sensor, Characterized by: having, located in the center, having the upper quality portion, and 從質量部分開特定距離，包圍該質量部，且具有上面 之支撐框、及 從質量部上面的端部延伸，連結質量部上面端與支撐 框上面的內側端，以支撐框內面懸吊質量部之複數的可撓 腕； 複數之可撓腕各由： 爲各爲連接可撓腕與支撐框或質量部之邊界的可撓腕 的兩端部份，且具有垂直可撓腕長度方向之剖面積的寬幅 部、及 爲被以位於可撓腕的兩端之2個寬幅部所夾住之可撓 腕部份，且垂直可撓腕長度方向之剖面積比寬幅部剖面積 更小之窄幅部所形成； 可撓腕上面係具有： 於支撐框上面或質量部上面具有兩端子，各由兩端子 延伸於可撓腕長度方向，限定性設置於可撓腕寬幅部上面 區域內之壓電阻抗元件、及 於可撓腕上面，對稱配置於可撓腕上面中心線，從該 可撓腕之一方的寬幅部上面延伸至窄幅部上面，並及於其 1277735 ]Γ年友月v/曰修(更)正替換頁 它的寬幅部上面，而延伸於該可撓腕長度方向之複數條的 金屬配線； 複數條的金屬配線中，至少一條係連接於設置在該可 撓腕上面之壓電阻抗元件之至少其中1端子，而且， 壓電阻抗元件各具有： 對稱配置於可撓腕上面的中心線，且各延伸於可撓腕 長度方向之至少2個壓電副阻抗元件、及Opening a certain distance from the mass portion, surrounding the mass portion, and having the upper support frame and extending from the upper end portion of the mass portion, connecting the upper end of the mass portion and the inner end of the upper surface of the support frame to support the hanging quality of the inner surface of the frame The plurality of flexible wrists; the plurality of flexible wrists are: each of the ends of the flexible wrist that connects the boundary between the flexible wrist and the support frame or the mass portion, and has a vertical flexible wrist length direction The wide portion of the sectional area and the flexible wrist portion sandwiched by the two wide portions at both ends of the flexible wrist, and the cross-sectional area of the vertical flexible wrist in the longitudinal direction is larger than the wide sectional area The smaller part of the wrist is formed; the top of the flexible wrist has: two terminals on the upper side of the support frame or on the upper part of the mass, each of which extends from the two terminals to the length of the flexible wrist, and is defined in the width of the flexible wrist The piezoelectric impedance element in the upper region and the top of the flexible wrist are symmetrically disposed on the center line of the flexible wrist, extending from the wide portion of the flexible wrist to the narrow portion, and its 1277735 ]Γ年友月v/曰修(more) a plurality of metal wires extending over the wide portion of the page and extending over the length of the flexible wrist; at least one of the plurality of metal wires is connected to the piezoelectric impedance element disposed on the flexible wrist At least one of the terminals, and each of the piezoelectric impedance elements has: a center line symmetrically disposed on the upper surface of the flexible wrist, and at least two piezoelectric auxiliary impedance elements extending in the longitudinal direction of the flexible wrist, and 連接壓電阻抗元件之兩端子以外的該至少2個壓電副 阻抗元件之端部各2個，於壓電阻抗元件之兩端子間，串 聯連接該至少2個壓電副阻抗元件之高濃度擴散層。 2 .如申請專利範圍第1項所記載之半導體型加速度 感測器，其中：質量部與支撐框與複數的可撓腕，係以矽 結晶形成爲一體， 壓電副阻抗元件與高濃度擴散層係於形成可撓腕之矽 結晶的一部份摻雜週期表ΙΠ族或V族元素所形成。Connecting at least two end portions of the at least two piezoelectric sub-impedance elements other than the two terminals of the piezoelectric impedance element, and connecting the high concentration of the at least two piezoelectric sub-impedance elements in series between the two terminals of the piezoelectric impedance element Diffusion layer. 2. The semiconductor type acceleration sensor according to claim 1, wherein the mass portion and the support frame and the plurality of flexible wrists are integrally formed by ruthenium crystal, and the piezoelectric auxiliary impedance element and the high concentration diffusion The layer is formed by a part of the doped periodic table of the lanthanum or group V element forming the ruthenium of the flexible wrist. 3.如申請專利範圍第2項所記載之半導體型加速度 感測器，其中：前述複數條之金屬配線的至少其中1條， 係沒有連接於壓電阻抗元件之任何一個端子的虛擬金屬配 線。 4.如申請專利範圍第2項所記載之半導體型加速度 感測器，其中：前述複數的可撓腕中，2個係延伸於質量 部上面內的正交之2方向中之1方向，前述複數的可撓腕 中，其它2個係延伸於質量部上面內的正交之2方向中的 其它 1方向， -2- 1277735 彳月’，修(更)正替換頁 前述複數的可撓腕各個在複數條的金屬配線之配置 中，與其它之任何一個可撓腕爲實質上相同。 5 .如申請專利範圍第3項所記載之半導體型加速度 感測器，其中：前述複數的可撓腕中，2個係延伸於質量 部上面內的正交之2方向中之1方向，前述複數的可撓腕 中，其它2個係延伸於質量部上面內的正交之2方向中的 其它1方向，3. The semiconductor type acceleration sensor according to claim 2, wherein at least one of the plurality of metal wirings is a dummy metal wiring which is not connected to any one of the piezoelectric impedance elements. 4. The semiconductor-type acceleration sensor according to the second aspect of the invention, wherein the plurality of flexible wrists extend in one of two orthogonal directions in the upper surface of the mass portion, Among the plurality of flexible wrists, the other two systems extend in the other one of the two orthogonal directions in the upper part of the mass section, -2- 1277735 彳月', repair (more) replaces the aforementioned plurality of flexible wrists Each of the plurality of metal wirings is substantially identical to any other flexible wrist. 5. The semiconductor type acceleration sensor according to claim 3, wherein: of the plurality of flexible wrists, two of the plurality of flexible wrists extend in one of two orthogonal directions in the upper surface of the mass portion, In the plurality of flexible wrists, the other two systems extend in the other one of the two orthogonal directions in the upper portion of the mass portion. 前述複數的可撓腕各個在複數條的金屬配線之配置 中，與其它之任何一個可撓腕爲實質上相同。 6.如申請專利範圍第1項所記載之半導體型加速度 感測器，其中：複數的可撓腕各個所具有之寬幅部，在垂 直可撓.腕長度方向之剖面中，爲該窄幅部的1.1至3-5 倍。Each of the plurality of flexible wrists is substantially identical to any other flexible wrist in the arrangement of the plurality of metal wires. 6. The semiconductor type acceleration sensor according to claim 1, wherein: the plurality of flexible wrists each have a wide portion, and the narrow width is in a section of the vertical flexible wrist length direction. 1.1 to 3-5 times the department. 7.如申請專利範圍第6項所記載之半導體型加速度 感測器，其中：複數的可撓腕各個所具有之寬幅部，在垂 直可撓腕長度方向之剖面中，爲該窄幅部的1.5至2.5 倍。 8. —種半導體型加速度感測器，其特徵爲：具有， 位於中央，且具有上面之質量部、及 從質量部分開特定距離，包圍該質量部，且具有上面 之支撐框、及 從質量部上面的端部延伸，連結質量部上面端與支撐 框上面的內側端，以支撐框內面懸吊質量部之4個可撓 腕； -3- 1277735 f件t月日修(更)正替換頁 前述4個可撓腕中，2個係延伸於質量部上面內的正 交之2方向中的1方向，其它2個係延伸於質量部上面內 的正交之2方向的其它1方向’ 可撓腕各由： 爲各爲連接可撓腕與支撐框或質量部之邊界的可撓腕 的兩端部份，且具有垂直可撓腕長度方向之剖面積的寬幅 部、及7. The semiconductor type acceleration sensor according to claim 6, wherein: the plurality of flexible wrists each have a wide portion, and the narrow portion is in a section of the longitudinally flexible wrist length direction. 1.5 to 2.5 times. 8. A semiconductor type acceleration sensor, characterized by having a central portion and having a mass portion thereon, and opening a specific distance from the mass portion, surrounding the mass portion, and having the upper support frame and the quality of the support The upper end of the upper portion extends, connecting the upper end of the mass portion and the inner end of the upper surface of the support frame to support the four flexible wrists of the mass portion of the inner surface of the frame; -3- 1277735 f piece of the month of repair (more) In the replacement page, two of the four flexible wrists extend in one of the two orthogonal directions in the upper surface of the mass portion, and the other two extend in the other two directions in the two orthogonal directions in the upper surface of the mass portion. 'The flexible wrists are: each of the two ends of the flexible wrist that connects the boundary between the flexible wrist and the support frame or the mass portion, and has a wide portion of a cross-sectional area perpendicular to the longitudinal direction of the wrist, and 爲被以位於可撓腕的兩端之2個寬幅部所夾住之可撓 腕部份，且垂直可撓腕長度方向之剖面積比寬幅部剖面積 更小之窄幅部所形成； 前述4個可撓腕中，2個可撓腕上面各具有：The portion of the flexible wrist portion that is sandwiched by the two wide portions at the ends of the flexible wrist, and the cross-sectional area of the vertical flexible wrist in the longitudinal direction is smaller than the narrow portion of the wide portion. Among the four flexible wrists, the two flexible wrists have: 於支撐框上面或質量部上面具有兩端子，各由兩端子 延伸於可撓腕長度方向，限定性設置於可撓腕寬幅部上面 區域內之測定可撓腕長度方向的加速度成分之壓電阻抗元 件，及測定質量部上面方向的加速度成分之壓電阻抗元 件、及 於可撓腕上面，對稱配置於可撓腕上面中心線，從該 可撓腕之一方的寬幅部上面延伸至窄幅部上面，並及於其 它的寬幅部上面，而延伸於該可撓腕長度方向之複數條的 金屬配線； 複數條的金屬配線中，至少一條係連接於設置在該可 撓腕上面之壓電阻抗元件之至少其中1端子， 前述4個可撓腕中，其它2個可撓腕上面各具有： 於支撐框上面或質量部上面具有兩端子，各由兩端子 -4 - 1277735 贫年t月)/y日修:更)正替換頁 延伸於可撓腕長度方向，限定性設置於可撓腕寬幅部上面 區域內之測定可撓腕長度方向的加速度成分之壓電阻抗元 件、及 於可撓腕上面，對稱配置於可撓腕上面中心線，從該 可撓腕之一方的寬幅部上面延伸至窄幅部上面，並及於其 它的寬幅部上面，而延伸於該可撓腕長度方向之複數條的 金屬配線；There are two terminals on the upper part of the support frame or on the upper part of the mass part, and each of the two terminals extends in the longitudinal direction of the flexible wrist, and is defined in the upper part of the wide portion of the flexible wrist to measure the piezoelectric component of the acceleration component in the longitudinal direction of the flexible wrist. The impedance element and the piezoelectric impedance element for measuring the acceleration component in the upper direction of the mass portion are symmetrically disposed on the upper surface of the flexible wrist on the upper surface of the flexible wrist, and extend from the wide portion of the flexible wrist to the narrow portion a plurality of metal wires extending over the width of the flexible wrist and extending over the length of the flexible wrist; at least one of the plurality of metal wires is attached to the flexible wrist At least one of the piezoelectric impedance elements, the other four flexible wrists, and the other two flexible wrists have: two terminals on the support frame or on the upper part of the mass, each of which is poor by two terminals - 4 - 1277735 t month) / y day repair: more) the replacement page extends in the length direction of the flexible wrist, and is defined in the upper region of the wide portion of the flexible wrist to measure the acceleration component of the length of the wrist The electrical impedance element and the top of the flexible wrist are symmetrically disposed on the center line of the flexible wrist, extending from the wide portion of one of the flexible wrists to the upper portion of the narrow portion and to the other wide portions. And a plurality of metal wires extending in the longitudinal direction of the flexible wrist; 複數條的金屬配線中，至少一條係連接於設置在該可 撓腕上面之壓電阻抗元件之至少其中1端子， 壓電阻抗元件各具有： 對稱配置於可撓腕上面的中心線，且各延伸於可撓腕 長度方向之至少2個壓電副阻抗元件、及At least one of the plurality of metal wires is connected to at least one of the piezoelectric impedance elements disposed on the flexible wrist, and each of the piezoelectric impedance elements has a center line symmetrically disposed on the flexible wrist, and each of Extending at least two piezoelectric secondary impedance elements extending in the longitudinal direction of the flexible wrist, and 連接壓電阻抗元件之兩端子以外的該至少2個壓電副 阻抗元件之端部各2個，於壓電阻抗元件之兩端子間，串 聯連接該至少2個壓電副阻抗元件之高濃度擴散層；而 且， 前述4個可撓腕各在複數條之金屬配線的配置中，與 其它任何一個可撓腕爲實質上相同。 9. 如申請專利範圍第8項所記載之半導體型加速度 感測器，其中：質量部與支撐框與4個可撓腕，係以矽結 晶形成爲一體， 壓電副阻抗元件與高濃度擴散層係於形成可撓腕之矽 結晶的一部份摻雜週期表III族或V族元素所形成。 10. 如申請專利範圍第9項所記載之半導體型加速度 -5- 1277735 r-----1 月修(更)正替換頁 感測器，其中：前述4個可撓腕中，其它2個之上面分別 具有之複數條的金屬配線中’其中2條係沒有連接於壓電 阻抗元件之任何一個端子的虛擬金屬配線° 11.如申請專利範圍第9項所記載之半導體型加速度 感測器，其中：前述4個可撓腕各個所具有之寬幅部，在 垂直可撓腕長度方向之剖面中’爲該窄幅部的1.1至3.5 倍。Connecting at least two end portions of the at least two piezoelectric sub-impedance elements other than the two terminals of the piezoelectric impedance element, and connecting the high concentration of the at least two piezoelectric sub-impedance elements in series between the two terminals of the piezoelectric impedance element The diffusion layer; and the four flexible wrists are substantially identical to any other flexible wrist in the arrangement of the plurality of metal wires. 9. The semiconductor type acceleration sensor according to claim 8, wherein the mass portion and the support frame and the four flexible wrists are integrally formed by ruthenium crystal, and the piezoelectric auxiliary impedance element and the high concentration diffusion The layer is formed by a portion of the Group III or Group V element of the periodic table that forms the crystal of the flexible wrist. 10. The semiconductor type acceleration -5 - 1277735 r-----1 month repair (more) positive replacement page sensor as described in item 9 of the patent application scope, wherein: the above 4 flexible wrists, the other 2 Among the metal wirings of the plurality of strips, the two of which are not connected to the dummy metal wiring of any one of the piezoelectric impedance elements. 11. The semiconductor type acceleration sensing described in claim 9 And wherein: the wide portions of each of the four flexible wrists are '1.1 to 3.5 times the section of the vertical flexible wrist length direction. 12·如申請專利範圍第Π項所記載之半導體型加速 度感測器，其中··前述4個可撓腕各個所具有之寬幅部， 在垂直可撓腕長度方向之剖面中，爲該窄幅部的1.5至 2.5 倍。12. The semiconductor-type acceleration sensor according to the scope of the patent application, wherein the wide portions of the four flexible wrists are narrow in the longitudinal direction of the longitudinally flexible wrist. 1.5 to 2.5 times the width. -6--6-
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