TWI276292B - A matrix converter for transforming electrical energy - Google Patents

A matrix converter for transforming electrical energy Download PDF

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Publication number
TWI276292B
TWI276292B TW092100613A TW92100613A TWI276292B TW I276292 B TWI276292 B TW I276292B TW 092100613 A TW092100613 A TW 092100613A TW 92100613 A TW92100613 A TW 92100613A TW I276292 B TWI276292 B TW I276292B
Authority
TW
Taiwan
Prior art keywords
matrix converter
electrical energy
terminals
transforming electrical
matrix
Prior art date
Application number
TW092100613A
Other languages
English (en)
Other versions
TW200302620A (en
Inventor
Emmanuel Dutarde
Christophe Beuille
Fabrice Breit
Henri Schneider
Original Assignee
Alstom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alstom filed Critical Alstom
Publication of TW200302620A publication Critical patent/TW200302620A/zh
Application granted granted Critical
Publication of TWI276292B publication Critical patent/TWI276292B/zh

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M11/00—Power conversion systems not covered by the preceding groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Ac-Ac Conversion (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW092100613A 2002-01-17 2003-01-13 A matrix converter for transforming electrical energy TWI276292B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0200552A FR2834829B1 (fr) 2002-01-17 2002-01-17 Convertisseur matriciel pour la transformation d'energie electrique

Publications (2)

Publication Number Publication Date
TW200302620A TW200302620A (en) 2003-08-01
TWI276292B true TWI276292B (en) 2007-03-11

Family

ID=8871331

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092100613A TWI276292B (en) 2002-01-17 2003-01-13 A matrix converter for transforming electrical energy

Country Status (11)

Country Link
US (1) US6781854B2 (zh)
EP (1) EP1329954B1 (zh)
JP (1) JP4087718B2 (zh)
KR (1) KR100967251B1 (zh)
CN (1) CN1317812C (zh)
CA (1) CA2416193C (zh)
ES (1) ES2625771T3 (zh)
FR (1) FR2834829B1 (zh)
HK (1) HK1057425A1 (zh)
RU (1) RU2298858C2 (zh)
TW (1) TWI276292B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2834828B1 (fr) * 2002-01-17 2005-04-29 Alstom Convertisseur matriciel pour la transformation d'energie electrique
ES2388720T3 (es) * 2010-02-11 2012-10-17 Abb Schweiz Ag Amortiguación activa de armónicos de corriente de un convertidor de niveles múltiples
CN102707180A (zh) * 2012-06-28 2012-10-03 南京南车浦镇城轨车辆有限责任公司 一种轨道车辆电气元件地面测试装置及其测试方法
TWD204008S (zh) * 2019-03-22 2020-04-11 晶元光電股份有限公司 發光裝置之部分

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US26427A (en) * 1859-12-13 Improvement in preserving flesh and meats
JPH09252119A (ja) * 1996-03-15 1997-09-22 Rohm Co Ltd 半導体装置
WO1999067798A2 (en) * 1998-06-05 1999-12-29 Alameda Applied Sciences Corporation Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates
US6140715A (en) * 1998-11-06 2000-10-31 Asea Brown Boveri Ab Electric switching device and a method for performing electric disconnection of a load
FR2786655B1 (fr) * 1998-11-27 2001-11-23 Alstom Technology Dispositif electronique de puissance
DE10005449B4 (de) * 2000-02-08 2008-06-12 Siemens Ag Überspannungsschutzvorrichtung für einen Matrixumrichter

Also Published As

Publication number Publication date
RU2298858C2 (ru) 2007-05-10
US6781854B2 (en) 2004-08-24
ES2625771T3 (es) 2017-07-20
EP1329954A1 (fr) 2003-07-23
US20030156432A1 (en) 2003-08-21
CA2416193C (fr) 2009-08-18
EP1329954B1 (fr) 2017-03-15
CN1317812C (zh) 2007-05-23
KR100967251B1 (ko) 2010-07-01
HK1057425A1 (en) 2004-04-02
FR2834829B1 (fr) 2005-04-29
JP4087718B2 (ja) 2008-05-21
FR2834829A1 (fr) 2003-07-18
CA2416193A1 (fr) 2003-07-17
CN1433129A (zh) 2003-07-30
JP2003289677A (ja) 2003-10-10
KR20030063152A (ko) 2003-07-28
TW200302620A (en) 2003-08-01

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MM4A Annulment or lapse of patent due to non-payment of fees