1274631 16998twf.doc/m 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種研磨墊及其製造方法，且特別是 有關於一種表面具有深度比在一定範圍之二溝槽的研磨墊 及其製造方法。 【先前技術】 在進行積體電路製程時，通常需要將晶圓表面的微鈿 凹凸消除並使其平坦化。以目前之平坦化的技術來說，化 學機械研磨法(Chemical Mechanical Polishing，簡稱 CMP) 疋現今較常使用之全面性平坦化(Global Planarization)的 技術。一般而5 ’在化學機械研磨的過程中，係藉由具有 懸浮研磨粒(abrasive particle)的研磨液(slurry)以及具有適 當的彈性(elasticity)與硬度(hardness)之研磨墊，在晶圓表 面彼此進行相對運動，來達成平坦化的目的。換言之，當 晶圓以按壓的方式於研磨墊上移動時，晶圓表面與研磨液 中的研磨粒子會彼此接觸而產生摩擦，如此會使得晶圓表 面產生耗損，而使其表面逐漸平坦。 為了在研磨墊上提供傳輸研磨液的通道，通常會在其 ^面形成許多溝槽。另外，為了提高研磨墊之壓縮性，通 常會在其背面形成許多溝槽。但是，在形成溝槽的過程， 則易在二溝槽的交界處產生大量殘屑，進而造成生產作業 費時。所以，如何製作出具有溝槽，且同時不會有大量殘 屑等問題的研磨墊已成為重要的發展課題。 【發明内容】 4 1274631 16998twf.doc/m 本發明的目的就是在提供—種研磨墊，可解決於其表 面上形成溝槽時，會有大量殘屑產生的問題。 本电明的另目的是提供一種研磨墊的製造方法 夠於表面形成溝槽時，減少殘屑產生。 、本發明提出-種研磨墊，此研磨墊係由聚合物基材所 構成，此聚合物基材之正面及/或背面形成有至少一徑向 槽以及至少-雜溝槽’其巾徑向溝槽與環狀溝槽之深产 比係介於0.1至1.05之間。 又 依照本發明的實施例所述，上述之徑向溝槽係一直線 形溝槽，其係由研磨墊之中心向外呈放射狀分布。另外， 徑向溝槽係-曲線形溝槽，其係由研磨墊之中心 旋狀分布。 依照本發明的實施例所述，上述之環狀溝槽係一圓形 溝槽、橢圓形溝槽或波浪形溝槽。 依照本發明的實施例所述’曰上述之徑向溝槽與環狀溝 槽之深度比係介於（U至0.3之間。在一實施例中， 溝槽與環狀溝槽之深度比係介於0.3至〇.5之間。在另一 實施例中，徑㈣槽與環狀溝槽之深度比係介於0.5至0.7 之間在X Λ %例中，控向溝槽與環狀溝槽之深度比係 ^於0.7”至0.9之間。在再—實施例中，徑向溝槽與環狀 溝槽之深度比係介於〇·9至ι·〇5之間。 本發明又提出-種研磨塾的製造方法，此方法為先提 供-?炎合物基材。然後，於聚合物基材之正面及域背面形 成至少-徑向線形溝槽以及至少—環狀溝槽，其中徑向溝 5 1274631 16998twf.doc/m 槽與環狀溝狀深纽係介於g.U1g 依照本發明的實施例 、^間。 法例如是-銑床加工方六、^ 以之#向溝槽的形成方 車床加工方式。在一大f槽的形成方法例如是一 環狀溝槽，且在經向溝槽 成，向溝槽再形成 驟。 ㈢夕成後更匕括進行一表面切削步 依照本發明的實施例所 、十少/一 & 形溝槽，其係由研磨塾之^=述之㈣溝槽係一直線 =係，二 溝槽依述之環狀 依照本發明的實施例所 槽之深度比係介於（U至=之=，純溝槽與環狀溝 f5與壞狀溝槽之深度比係介於（U S 0.5之間。在另- 槽與環狀溝槽之深度比係介於〇.5至〇 7 八 又貝轭例中，徑向溝槽與環狀溝槽之深度比係 、、羞抽7 〇.9之間。在再一實施例中，徑向溝槽與環狀 4槽之深度比係介於〇.9至丨.05之間。 本！X月係於研磨墊上形成徑向溝槽以及環狀溝槽，特 =疋由於徑向溝槽與環狀溝槽的深度比係限絲—定範圍 :因此可改善於製作溝槽的過程中，易在溝槽交界處產 歹4屑的問題’以減少生產作業的時間’並可降低製作的 成本。 1274631 16998twf.doc/m 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉實施例，並配合所附圖式，作詳細說明如 下。 【實施方式】 圖1為依照本發明實施例所繪示之研磨塾的示意圖。 請參照圖1，研磨墊100係由一聚合物基材102所構 成’ 合物基材102的材質例如是聚胺醋(polyurethane)、 ，環氧树脂(epoxy resin)、酉分曱酸樹脂(phen〇i formaidehyde resin)、二聚氰胺樹脂（melamine resin)或熱固性樹脂 (thermosetting resin)等。此外，在聚合物基材102之正面 104係形成有之至少一個徑向溝槽12〇以及至少一個環狀 溝槽140 ’其中徑向溝槽12〇與環狀溝槽14〇之课度比係 介於0.1至1·〇5之間。上述，徑向溝槽與環狀溝槽之深度 比係介於0.1至〇·3之間。在一實施例中，徑向溝槽與環 狀溝槽之深度比係介於〇·3至〇·5之間。在另一實施例中， 徑向溝槽與環狀溝槽之深度比係介於〇·5至〇·7之間。在 隊 又一實施例中，徑向溝槽與環狀溝槽之深度比係介於0.7 至0.9之間。在再一實施例中，徑向溝槽與環狀溝槽之深 度比係介於0.9至1.05之間。 在一實施例中，徑向溝槽120可例如是由圖2所示之 直線形’冓槽所構成，且直線形溝槽係由聚合物基材1〇2之 中心向外呈放射狀分布。在另一實施例中，徑向溝槽12〇 可例如是由圖3所示之曲線形溝槽所構成，且曲線^溝槽 係由聚合物基材丨02之中心向外呈螺旋狀分布。在又一實 1274631 16998twf.doc/m 施例中’徑向溝槽120可例如是由圖4所示之曲線形溝槽 所構成，且曲線形溝槽係由聚合物基材102之中心向外呈 放射狀分布。 另外，在一實施例中，環狀溝槽140可例如是由圖5 , 所示之圓形溝槽所構成，且其係不同半徑之同心圓。在另 一實施例中，環狀溝槽140可例如是由圖6所示之橢圓形 溝槽所構成，且其係不同軸長之同心橢圓。在又一實施例 _ 中，環狀溝槽140可例如是由圖7所示之波浪形溝槽所構 成。 本發明之研磨墊100可由上述實施例中之圖2至圖4 所示之徑向溝槽120以及圖5至圖7所示之環狀溝槽14〇 的任意組合而成。 - 值得一提的是，研磨墊100之徑向溝槽120與環狀溝 槽140系會在其製造過程中於溝槽兩侧產生殘屬，特別是 在兩個溝槽較界處此問題更為嚴重。所以，在使用研磨 墊進行研磨動作前，通常需先進行—清除朗的步驟，ς 、$會造成生產作業費時等問題。因此，本發明係特別地對 • ^向溝槽120與環狀频14Q的深度比限定在—^範圍内 (曰/罙度比0.1 1·〇5之間）’以改善上述提及之產生殘屬的問 題’減4生產作業的時間’降低製作的成本。 η、此外，可在研磨墊的背面106形成徑向溝槽 120以及 衣片、溝枱1/0。甚至是，可在研磨墊的正面1〇4與背面 同㈣成k向溝槽12〇以及環狀溝槽14Q。同樣地，背面 06之位向溝才曹12〇與環狀溝槽14〇之深度比係介於 8 1274631 16998twf.doc/m 至1.05之間’因此可改善在研磨墊上製造溝槽時，會產生 殘屑，因而耗費製造成本與時間的問題。承上述，在研磨 墊的背面卿叙徑向溝槽12〇無狀溝槽⑽可分別二 圖2至圖4以及圖5至圖7所示之示意圖，因此於此不再 ， 繪示，且不再贅述。 在上述貝加例中，本發明之研磨墊上的握向溝槽 的圖案係以直線形、曲線形，且分別是呈放射狀、螺旋狀 • 為例作說明，而環狀溝槽HO的圖案係以圓形、橢圓形、 波浪形為例作說明。然而，本發明並無對徑向溝槽12〇愈 環狀溝槽14G之随的形狀加以限定，且本發明亦不對_ 向溝槽U0與環狀溝槽140的數目、％度及間距做特獅 限定，其可端視實際的需要而定。 、為了詳述本發明，以下係說明本發明之研磨墊的製造 方法，且以在研磨墊之正面形成有呈放紐之直線形圖案 的徑向溝槽以及圓形圖案的環狀溝槽為例說明之。圖8係 依照本發明實施例所繪示之研磨墊的上視示意圖，而圖9 鲁 則是繪示沿圖8之剖面線的剖面示意圖。 請參照圖8與圖9，研磨墊1〇〇的製造方法係先提供 •一聚合物基材102，且此聚合物基材1〇2具有—正面1〇4 與一背面106。 然後，於聚合物基材102之正面1〇4上形成徑向溝槽 120以及環狀溝槽140。徑向溝槽12〇的形成方法例如是利 用銑床(milling machine)加工方式形成之。銑床加工方式例 如是，將聚合物基材102固定於銑床加工機台上，並^轉 12746311274631 16998twf.doc/m IX. Description of the Invention: [Technical Field] The present invention relates to a polishing pad and a method of manufacturing the same, and more particularly to a surface having a surface having a depth ratio of a certain range of two grooves Pad and its manufacturing method. [Prior Art] When performing an integrated circuit process, it is usually necessary to eliminate and flatten the microbends on the surface of the wafer. In the current flattening technology, Chemical Mechanical Polishing (CMP) is the technology used today for Global Planarization. In general, 5' is in the process of chemical mechanical polishing by using a slurry with suspended abrasive particles and a polishing pad with appropriate elasticity and hardness on the wafer surface. Move relative to each other to achieve the purpose of flattening. In other words, when the wafer is moved on the polishing pad by pressing, the surface of the wafer and the abrasive particles in the polishing liquid come into contact with each other to cause friction, which causes the surface of the wafer to be depleted and the surface thereof to be flat. In order to provide a passage for transporting the slurry on the polishing pad, a plurality of grooves are usually formed on the surface. In addition, in order to improve the compressibility of the polishing pad, a large number of grooves are usually formed on the back surface. However, in the process of forming the grooves, it is easy to generate a large amount of debris at the boundary of the two grooves, which causes time-consuming production work. Therefore, how to make a polishing pad having a groove without causing a large amount of debris and the like has become an important development issue. SUMMARY OF THE INVENTION 4 1274631 16998 twf.doc/m The object of the present invention is to provide a polishing pad which solves the problem that a large amount of debris is generated when a groove is formed on the surface thereof. Another object of the present invention is to provide a method of manufacturing a polishing pad which is capable of reducing the generation of debris when a groove is formed on the surface. The present invention provides a polishing pad which is composed of a polymer substrate having a front surface and/or a back surface formed with at least one radial groove and at least a miscellaneous groove The deep ratio of the groove to the annular groove is between 0.1 and 1.05. Still further in accordance with an embodiment of the present invention, the radial grooves are linear grooves which are radially outwardly distributed from the center of the polishing pad. Further, the radial groove-curved groove is distributed in a spiral shape from the center of the polishing pad. According to an embodiment of the invention, the annular groove is a circular groove, an elliptical groove or a wavy groove. According to an embodiment of the invention, the depth ratio of the radial groove to the annular groove is between (U and 0.3. In one embodiment, the depth ratio of the groove to the annular groove The system is between 0.3 and 〇.5. In another embodiment, the depth ratio of the radial (four) groove to the annular groove is between 0.5 and 0.7. In the case of X Λ %, the control groove and the ring The depth ratio of the groove is between 0.7" and 0.9. In the re-embodiment, the depth ratio of the radial groove to the annular groove is between 〇·9 and ι·〇5. The invention further proposes a method for manufacturing a polishing crucible, which first provides an inflammatory substrate, and then forms at least a radial line groove and at least an annular groove on the front side and the back side of the polymer substrate. a groove, wherein the radial groove 5 1274631 16998twf.doc/m groove and the annular groove-shaped deep line are between g.U1g according to an embodiment of the present invention. The method is, for example, a milling machine processing square 6, ^ by # The method of forming a square lathe into a groove. The forming method of a large f-groove is, for example, an annular groove, and is formed in the meridional groove, and is formed into a groove. (3) After the formation进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照According to an embodiment of the present invention, the depth ratio of the groove is between (U to ==, the depth ratio of the pure groove to the annular groove f5 to the bad groove is between (US 0.5). In another - The depth ratio of the groove to the annular groove is between 〇.5 and 〇7, and the ratio of the depth of the radial groove to the annular groove is between 〇.9. In another embodiment, the ratio of the depth of the radial groove to the annular groove is between 〇.9 and 丨.05. The X-month is formed on the polishing pad to form a radial groove and an annular groove. Because the depth ratio of the radial groove to the annular groove is limited to the wire-fixed range: it can improve the problem of easy to produce 4 chips at the groove boundary during the process of making the groove. The above-mentioned and other objects, features and advantages of the present invention will become more apparent from the <RTIgt; </ RTI> </ RTI> <RTIgt; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a polishing crucible according to an embodiment of the invention. Referring to FIG. 1, a polishing pad 100 is composed of a polymer substrate 102. The material of the composite substrate 102 is, for example, polyurethane, epoxy resin, phen〇i formaidehyde resin, melamine resin or thermosetting. Further, a thermosetting resin, etc. Further, at least one radial groove 12 〇 and at least one annular groove 140 ′ are formed on the front surface 104 of the polymer substrate 102 , wherein the radial groove 12 〇 and the annular groove The ratio of the slot 14 is between 0.1 and 1·〇5. In the above, the ratio of the depth of the radial groove to the annular groove is between 0.1 and 〇·3. In one embodiment, the ratio of the depth of the radial groove to the annular groove is between 〇·3 and 〇·5. In another embodiment, the ratio of the depth of the radial groove to the annular groove is between 〇·5 and 〇·7. In yet another embodiment of the team, the ratio of the depth of the radial groove to the annular groove is between 0.7 and 0.9. In still another embodiment, the ratio of the depth of the radial groove to the annular groove is between 0.9 and 1.05. In one embodiment, the radial grooves 120 may be formed, for example, by a linear 'groove as shown in FIG. 2, and the linear grooves are radially outwardly distributed from the center of the polymer substrate 1〇2. . In another embodiment, the radial grooves 12A may be formed, for example, by the curved grooves shown in FIG. 3, and the curved grooves are spirally distributed outward from the center of the polymer substrate 丨02. . In a further embodiment 1274631 16998 twf.doc/m embodiment, the radial groove 120 can be formed, for example, by a curved groove as shown in FIG. 4, and the curved groove is centered on the polymer substrate 102. The outside is radially distributed. Additionally, in one embodiment, the annular groove 140 can be formed, for example, by a circular groove as shown in FIG. 5, and is concentric with different radii. In another embodiment, the annular groove 140 can be formed, for example, by an elliptical groove as shown in Figure 6, and is a concentric ellipse of different axial lengths. In still another embodiment, the annular groove 140 may be formed, for example, by a wavy groove as shown in FIG. The polishing pad 100 of the present invention can be formed by any combination of the radial grooves 120 shown in Figs. 2 to 4 and the annular grooves 14A shown in Figs. 5 to 7 in the above embodiment. - It is worth mentioning that the radial grooves 120 and the annular grooves 140 of the polishing pad 100 may cause residuals on both sides of the groove during the manufacturing process thereof, especially at the boundary between the two grooves. More serious. Therefore, before using the polishing pad for the grinding operation, it is usually necessary to perform the first step - clearing the lang, which will cause problems such as time-consuming production. Therefore, the present invention specifically limits the depth ratio of the groove 120 to the ring frequency 14Q within a range of - (曰 / 比 ratio 0.1 1 · 〇 5) to improve the above-mentioned production. The problem of the genus 'minus 4 time of production work' reduces the cost of production. Further, η, in addition, a radial groove 120 and a sheet and a land 1/0 may be formed on the back surface 106 of the polishing pad. In even, the front surface 1〇4 and the back surface of the polishing pad may be the same as (4) the k-direction groove 12〇 and the annular groove 14Q. Similarly, the depth ratio of the back surface 06 to the groove 12 〇 and the annular groove 14 系 is between 8 1274631 16998 twf.doc/m to 1.05', so that when the groove is formed on the polishing pad, Residues are generated, which incurs manufacturing cost and time. In the above, the radial groove 12 〇 状 沟槽 ( ( ( ( 可 可 可 可 可 可 可 可 可 可 可 可 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向 径向No longer. In the above-mentioned Bega example, the pattern of the grip groove on the polishing pad of the present invention is linear, curved, and is radially, spiral, respectively, as an example, and the pattern of the annular groove HO The circular, elliptical, and wavy shapes are taken as an example. However, the present invention does not define the shape of the radial groove 12 to cure the annular groove 14G, and the present invention does not make the number, %, and spacing of the groove U0 and the annular groove 140. Special lions are limited, depending on actual needs. In order to explain the present invention in detail, the following is a description of a method for manufacturing a polishing pad of the present invention, in which a radial groove having a linear pattern in a front surface and a circular groove having a circular pattern are formed on the front surface of the polishing pad. Explain the example. Figure 8 is a top plan view of a polishing pad according to an embodiment of the present invention, and Figure 9 is a schematic cross-sectional view taken along line line of Figure 8. Referring to FIG. 8 and FIG. 9, the manufacturing method of the polishing pad 1 先 first provides a polymer substrate 102, and the polymer substrate 1 〇 2 has a front surface 1 〇 4 and a back surface 106. Then, a radial groove 120 and an annular groove 140 are formed on the front surface 1〇4 of the polymer substrate 102. The method of forming the radial grooves 12A is formed, for example, by a milling machine. For example, the milling machine is fixed on the milling machine table and turned 1274631
徑向溝槽120之圖案。環狀溝槽14〇的形成方法例如是 用車床(lathe)加工方式形成之。銑床加工方式例如是， 聚合物基材102裝置於銑床加工機台上，並以移動機台上 - 之刀具(cutter)，且配合旋轉聚合物基材1〇2，以形成^大 溝槽14Θ 〇 在=貫施例巾，是以銑床加I方式絲合物基材102 • 上形鍊向賴12Q，然後再以車床的方式形成環狀溝槽 =0。車ϋ的，在形成徑向溝槽12〇之後，形成環狀溝槽 士〇之月k包括進行-表面切削步驟，將形成徑向溝槽· 日请產生的殘屑磨除。最終形成的徑向翻丨2Q的深唐0 rThe pattern of radial grooves 120. The method of forming the annular groove 14 is formed, for example, by lathe processing. The milling machine is processed, for example, by placing the polymer substrate 102 on a milling machine table, and moving the cutter on the machine table, and rotating the polymer substrate 1〇2 to form a large groove 14Θ In the case of the uniform application, the machine is combined with the I-type filament substrate 102. The upper chain is oriented 12Q, and then the annular groove is formed by lathe. In the rut, after the radial grooves 12 are formed, the formation of the annular groove g of the girth includes a carry-surface cutting step to remove the debris generated by the radial grooves. The resulting radial turn 2Q deep Tang 0 r
伟僧140，其形成方法同樣可分別例 工方式、表面切削步驟以及車床加工方式 不再贅述。 如是利用銑床加工方式、 以形成之，於此不再贅述Wei Wei 140, its formation method can also be separately described in the form of work, surface cutting steps and lathe processing methods. If it is processed by milling machine, it will not be described here.
10 1274631 16998twf.doc/m 中，且將表1之數據綠於圖l〇中。 表 實驗例10 1274631 16998twf.doc/m, and the data in Table 1 is green in Figure l〇. Table
Dl (mm) D2 (mm) 深度比 (D1/D2) ^-------^ 殘屑密度 ^〇04~ ~~~——__ Π Af. 1.60 1.79 1.73 ~ 1.79 0.97 〜 1.82 1.79 1.02 -—~~--__ Π ο 〇 1.95 ~ 1.79 1.09 ^ \j.y〇 ^ Q CQ 2.00 — 1.79 1.12 ^ J〇 --一_ 7.63 ·— -~1 槽的=3,1與圖1G，實驗例1〜5是固定環狀 曰、/又2為L79 mm，而徑向溝槽的深度Dl分 :·60每1.73、1·82、195、2 〇〇疆以進行試驗。由表1 a例1〜5的徑向溝槽與環狀溝槽之Dl (mm) D2 (mm) Depth ratio (D1/D2) ^-------^ Residual density ^〇04~ ~~~——__ Π Af. 1.60 1.79 1.73 ~ 1.79 0.97 ~ 1.82 1.79 1.02 -—~~--__ Π ο 〇1.95 ~ 1.79 1.09 ^ \jy〇^ Q CQ 2.00 — 1.79 1.12 ^ J〇--一_ 7.63 ·— -~1 slot =3,1 and Figure 1G, experimental example 1 to 5 are fixed ring 曰, / 2 is L79 mm, and the depth Dl of the radial groove is: ·60 per 1.73, 1.82, 195, 2 〇〇 Xinjiang for testing. From the radial grooves and the annular grooves of Table 1 a to Examples 1 to 5
墊H 8、7·63。表1中之「鋪密度」即是指柄i 形成後向溝槽與環狀溝槽時，其交界處所產生之每 位面積的殘屑量。 户貝知例1〜5的貫驗結果為：實驗例1〜3所產生的殘屑 =度在⑽4〜㈣之間，而實驗例4、5所產生的殘屑密度較 、Ί乂易對整個生產作業造成影響。由圖10可發現，徑向 ，槽與環，溝槽之深度比錢大，_產生的殘屑密度越 伯i另外’實驗例1〜5僅以深度比為_〜1.12之間做試驗， 圖1〇所繪示之曲線的趨勢，可推知在深度比^ 、於0.89的 1274631 16998twf.doc/m 情況下’其殘屬密度在〇.〇4以下。因此，本發明之徑向溝押 與環狀溝槽的深度比介於0.K05之間，所以其所產生的^ 屑密度在約0.98以下，如此將不會有影響生產作業時間的問 題。Pad H 8, 7 · 63. The "ply density" in Table 1 refers to the amount of debris per area produced at the junction of the shank i when forming the backward groove and the annular groove. The results of the tests of Examples 1 to 5 of the households are as follows: the residuals generated in Experimental Examples 1 to 3 = degrees between (10) 4 and (4), and the residual density generated in Experimental Examples 4 and 5 is relatively simple. The entire production operation has an impact. It can be found from Fig. 10 that the radial direction, the groove and the ring, the depth of the groove is larger than the money, and the residual density of the _ is more inferior. In addition, the experimental examples 1 to 5 are only tested with a depth ratio of _~1.12. The trend of the curve shown in Fig. 1 可 can be inferred that the depth density is below 〇.〇4 in the case of a depth ratio of 1,274,631,16,998 twf.doc/m at 0.89. Therefore, the depth ratio of the radial groove to the annular groove of the present invention is between 0. K05, so that the density of the chips generated is less than about 0.98, so that there will be no problem affecting the production time.
綜上所述，本發明之研磨墊上係形成有徑向溝槽，以 及環狀溝槽，而此二溝槽的作用不僅是可提供較好的壓縮 性之外’也可於研磨過程中協助研磨液能约均勾輸送到不 同區域。特別是，由於徑向溝槽與環狀溝槽的深度係限 在:定範圍内’、因此可改善於製作溝槽的過程中，易在溝 槽父界處產生朗㈣題，喊少生產作業 降低製作的成本。 J $財^已以實施_露如上，齡並祕以限定 ίί 沾習此技勢者’在不脫離本發明之精神和範 圍内’當可作些許之更動與濁飾，因此本發明之伴=門 當視後附之申請專利範圍所界定者為準。/之保5又乾圍 【圖式簡單說明】 ===發明實施例所緣示之研磨塾的示意圖。 之上:示：本發明所繪示之研磨塾的徑向溝槽 之上::;圖圖:為依照本發明所'㈣之研磨塾的環狀溝槽 圖 圖8係依照本發明實施例所緣示之研磨塾的上視示意 圖9為繪示沿® 8的14,剖面_剖面示意圖。 1274631 16998twf.doc/m 圖10為繪示研磨墊的徑向溝槽與環狀溝槽之深度比 對殘屑密度的關係圖。 【主要元件符號說明】 100 :研磨墊 102 聚合物基材 104 正面 106 _ 120 140 背面 徑向溝槽 環狀溝槽 13In summary, the polishing pad of the present invention is formed with radial grooves and annular grooves, and the two grooves not only provide better compression but also assist in the grinding process. The slurry can be transported to different areas. In particular, since the depths of the radial grooves and the annular grooves are limited to: within a certain range, it can be improved in the process of making the grooves, and it is easy to produce a rough (four) problem at the parent boundary of the groove, shouting less production. The job reduces the cost of production. J $财^ has been implemented as _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ = The definition of the patent application scope attached to the door is subject to change. /保保5及干围 [Simplified description of the schema] === schematic diagram of the grinding crucible shown in the embodiment of the invention. Above: Show: above the radial groove of the grinding crucible shown in the present invention: Fig. 8 is an annular groove diagram of the grinding crucible according to the invention (4). FIG. 8 is an embodiment according to the present invention. The top view of the polishing crucible shown in Fig. 9 is a cross-sectional view taken along line 14 of the ® 8. 1274631 16998twf.doc/m Figure 10 is a graph showing the relationship between the depth of the radial groove of the polishing pad and the annular groove versus the density of the debris. [Main component symbol description] 100: polishing pad 102 polymer substrate 104 front 106 _ 120 140 back radial groove annular groove 13