1273026 九、發明說明： 【發明所屬之技術領域】 、本發明係為一種塑膠基板低溫表面改質之方 法，尤指利用一直流脈衝電源產生電漿進行塑膠基 板表面改貝之方法，以及利用各種真空鍍膜法鑛膜 亦可保持薄膜與基板間之附著性。 # 【先前技術】 目前塑膠基板的電漿表面改質方法有很多種， 主要是以交流（AC)電源，包括射頻電漿和微波電 漿，以及離子束轟擊為主，這是因為塑膠基板為非 導體，谷易累積電荷而放電，造成表面損傷。 另外’這些電漿源都操作在真空低氣壓 (10 3〜10 lTorr)，不但放電電壓高（>1000V)，電漿粒 馨子碰撞的機率也低，因此電漿粒子攜帶有較高之動 月b，入射至基板表面時，會引起基板表面溫度急劇 上升’而塑膠基板導熱性差，即使基板座有冷水冷 卻’塑膠基板表面也會因受熱而變形，無法達到表 面改質的目的，這種現象對厚度較厚（〉5111111)之塑膠 基板，更為嚴重。 如美國專利第6156394號，係以微波（MW)源產 生笔椠’並以RF做為基板偏壓操作在1 〇〇mTorr氣 1273026 ^下’此法不但需要維持在較高真空，而且微波源 M RF電源供應器價格昂貴，無法商業化。另外德 國專利：如9703538 Α1使用離子源以1KV以上 同電壓產生離子’在7.5mTorr氣壓下轟擊基 板’_在此條件下離子的能㈣常高，^對基板造 成幸*射損傷。 雖然上述之習知技術，可進行基板表面改質處1273026 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for modifying a low temperature surface of a plastic substrate, in particular, a method for generating a plasma on a surface of a plastic substrate by using a continuous pulse power source to generate plasma, and utilizing various methods. The vacuum coating method also maintains the adhesion between the film and the substrate. # [Prior Art] At present, there are many kinds of plasma surface modification methods for plastic substrates, mainly based on alternating current (AC) power sources, including radio frequency plasma and microwave plasma, and ion beam bombardment. This is because the plastic substrate is Non-conductors, the valley is easy to accumulate charge and discharge, causing surface damage. In addition, 'these plasma sources are operated at a vacuum low pressure (10 3~10 lTorr), not only the discharge voltage is high (>1000V), but also the probability of collision of the plasma granules is low, so the plasma particles carry a high movement. When b is incident on the surface of the substrate, the surface temperature of the substrate rises sharply, and the thermal conductivity of the plastic substrate is poor. Even if the substrate is cooled by cold water, the surface of the plastic substrate is deformed by heat and cannot be modified. The phenomenon is more serious for plastic substrates with thicker thickness (>5111111). For example, in U.S. Patent No. 6,156,394, a microwave (MW) source is used to generate a pencil 椠 'and RF is used as a substrate biasing operation at 1 〇〇mTorr gas 1273026 ^'. This method needs to be maintained not only at a higher vacuum but also at a microwave source. M RF power supplies are expensive and cannot be commercialized. In addition, the German patent: such as 9703538 Α1 uses an ion source to generate ions at the same voltage above 1KV and bombards the substrate at a pressure of 7.5 mTorr. _ Under these conditions, the energy of the ions (4) is always high, and the substrate is damaged. Although the above-mentioned conventional techniques can be used to modify the surface of the substrate
理’但須要高頻電源供應氣及高放電氣壓，無法大 型化及量產化，故’―般習用者係無法符合使用者 於實際使用時之所需。 【發明内容】 本發明之主要目的係在於提供一有效降低塑膠 基板表面溫度，達到塑膠基板表面改質之方法，並 增加該塑膠基板與鑛膜之附著力。 為達上述之目的，本發明係為一種塑膠基板低 /JHL表面改貝之方法，戎方法係利用一直流脈衝電源 使該電極間進行放電產生一電漿，利用該電漿進行 該基板表面改質。以下為其步驟： (1) 將一塑膠基板放置於一真空腔體之基板座 上，經由一幫浦糸統抽氣至一真空度； (2) 通入一氣體使該真空腔體維持一氣壓，並開 1273026 啟一直流脈衝電源供應器，進行直流放電產生一電 漿；以及 (3)利用該電漿進行該塑膠基板之表面處理，待 表面處理後，以真空鍍膜法於處理過之塑膠基板表 面鍍上一薄膜。 【實施方式】However, high-frequency power supply gas and high discharge air pressure are required, and it is impossible to enlarge and mass-produce. Therefore, the "normal users" cannot meet the needs of users in actual use. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for effectively reducing the surface temperature of a plastic substrate, modifying the surface of the plastic substrate, and increasing the adhesion between the plastic substrate and the mineral film. In order to achieve the above object, the present invention is a method for modifying the low/JHL surface of a plastic substrate by using a continuous current pulse power source to discharge a discharge between the electrodes to generate a plasma, and using the plasma to perform surface modification of the substrate. quality. The following steps are as follows: (1) placing a plastic substrate on a substrate holder of a vacuum chamber and pumping it to a vacuum through a pump; (2) introducing a gas to maintain the vacuum chamber Air pressure, and open 1273026 to start the pulse power supply, DC discharge to produce a plasma; and (3) use the plasma to perform surface treatment of the plastic substrate, after surface treatment, vacuum treatment The surface of the plastic substrate is coated with a film. [Embodiment]
。月芩閱『第1及第2圖』所示，係本發明之流 程示意圖及本發明之適用裝置結構示意圖。如圖所 不·本發明係為一種塑膠基板低溫表面改質之方 法’使用於一裝置(如第2圖所示），該裝置係為一 2腔體4,係包含一基板座5、一陰極電極6、至 夕以上之陽極電極7、一氣壓控置閥8、一幫浦裝. The drawings are shown in "First and Second Figures", which are schematic diagrams of the process of the present invention and a schematic view of the structure of the applicable device of the present invention. As shown in the drawings, the present invention is a method for modifying a low temperature surface of a plastic substrate, which is used in a device (as shown in FIG. 2). The device is a 2-cavity 4, which comprises a substrate holder 5 and a Cathode electrode 6, anode electrode 7 above, and a pressure control valve 8, a pump
置9及一直流脈衝電源供應器1〇，該塑膠基板低溫 表面改負之方法至少包含以下步驟： ^鄉（丨）1 ··將一塑膠基板 之基板座5上，經由一幫浦裝置9抽氣至—真 度’其中δ亥真空度為！ 〇-3托爾以下，該基板座$ 陰極電極6及陽極電極7係引人冷卻水冷卻，用 吸收電漿放電時所產生之熱能，該基板座5之電 !:為：接電位，用以減少帶電粒子對塑勝基板， 電位亦可接地；該陽極電極7之電位係· 接-正_，用以吸收電之電子，用以減少1 1273026 子對塑膠基板51之轟擊，其電位亦可為接地。The method of changing the low temperature surface of the plastic substrate comprises at least the following steps: ^ Township (丨) 1 · A substrate of a plastic substrate 5 is passed through a pump device 9 Pumping to - true degree 'where δ hai vacuum is! Below the 〇-3 Torr, the substrate holder $the cathode electrode 6 and the anode electrode 7 are cooled by cooling water, and the heat generated by the discharge of the absorption plasma is used to: the potential of the substrate holder 5: In order to reduce the charged particles to the plastic substrate, the potential can also be grounded; the potential of the anode electrode 7 is connected to positive_, which is used to absorb the electric electrons, to reduce the bombardment of the 1 1273026 sub-plastic substrate 51, and the potential thereof is also Can be grounded.
步驟(2)2 :待達到所需之真空度時，通入 電氣體η使該真空腔體4’其中該放電氣體"係 可為氫氣、氦氣、氬氣、氮氣、氧氣或上述之混入 氣體，利用該氣壓控制閥8調整維持一氣壓於丨^ 爾至50托爾F曰’，並開啟一直流脈衝電源供應器 進行直流放電產生一電漿，其電源為直流脈衝，节 直流脈衝放電電壓係低於1〇〇〇伏特，工作頻率為 〇〜350KHZ，處理功率及時間係依塑膠基板51之性 質而定。 步驟（3)3 ·利用該電漿進行該塑膠基板η之表 面處理，待表面處理後，以真空鍵膜法於處理過之 塑膠基板51表面鑛上一薄膜，其中，該真空鑛膜法 係可為熱蒸鍍、磁控濺射、離子被覆、物理氣相沉 # 積（PVD)或電漿輔助化學氣相沉積（pecvd)。 凊芩閱『第3圖』所示，係本發明之實施例裝 置結構示意圖。如圖所示：下列為本發明塑膠基板 低溫表面改質之方法之實施例說明·· [實施例1]壓克力基板進行表面改質 步驟（1):該50x50mm、厚度2mm之透明壓克 力基板51放置於一不銹鋼之真空腔體*之基板座 5，利用該幫浦裝置9抽氣至8x1 〇·5托爾，接著關 8 1273026 閉該氣廢控㈣8,並使該幫浦襄置9維持插氣。 步：⑺··通入一氫氣lu，其流量為丨_ seem，使該真空氣壓係維持於5㈣， Μ基板座5剌人冷卻水冷卻，職板座5^Step (2) 2: When the desired degree of vacuum is reached, the electric gas η is introduced to make the vacuum chamber 4' wherein the discharge gas is hydrogen, helium, argon, nitrogen, oxygen or the like. The gas is controlled by the air pressure control valve 8 to maintain a pressure of 丨^ to 50 Torr F曰', and the DC pulse power supply is turned on to generate a plasma, and the power source is a DC pulse, and the DC pulse is discharged. The voltage system is less than 1 volt, and the operating frequency is 〇~350KHZ. The processing power and time are determined by the nature of the plastic substrate 51. Step (3) 3: The surface treatment of the plastic substrate η is performed by using the plasma, and after the surface treatment, a film is deposited on the surface of the treated plastic substrate 51 by a vacuum bonding method, wherein the vacuum film system is It can be thermal evaporation, magnetron sputtering, ion coating, physical vapor deposition (PVD) or plasma assisted chemical vapor deposition (pecvd). Referring to Fig. 3, there is shown a schematic view of the structure of an embodiment of the present invention. As shown in the figure: The following is a description of an embodiment of the method for modifying the low temperature surface of the plastic substrate of the present invention. [Example 1] Surface modification step of the acrylic substrate (1): transparent stamp of 50 x 50 mm and thickness 2 mm The force substrate 51 is placed on the substrate holder 5 of a stainless steel vacuum chamber*, and is pumped to 8x1 〇·5 Torr by the pump device 9, and then closed 8 1273026 to close the gas waste control (4) 8 and make the pump 襄Set 9 to maintain the air. Step: (7)··Into a hydrogen gas, the flow rate is 丨_ seem, so that the vacuum pressure system is maintained at 5 (four), Μ substrate holder 5 冷却人 cooling water cooling, job board seat 5^
/于接電位，該基板座與陰極電極之距離12為⑺公 分’其之間係具有陽極電極7，該陽極電極7係為 接地。開啟一直流脈衝電源供應器1〇產生電漿，其 直流脈衝放電電壓係為38〇伏特，工作頻率為 ΙΟΟΚΗζ，處理功率為8〇〇瓦，處理時間為1〇分鐘。 步驟（3):待該壓克力基板51進行表面改質後， 將壓克力基板51取出，置於另一真空腔體4以雙磁 控表射鑛上一二氧化石夕之薄膜，該薄膜厚度為 500ilm，並進行剝離測試、浸泡2〇%之濃鹽水24小 時及置於溫度50度、濕度95%之環境測試24小時， 測試結果係指該薄膜仍可保持完整及良好之附著 性。 [實施例2]壓克力基板進行表面改質及電漿輔助化 學氣相沉積（PECVD)鍍膜 該壓克力基板5 1進行表面改質之條件及方 法，係與該實施例1之步驟（1)及步驟（2)相同。 另外，於步驟（3)本實施例係利用電漿輔助化學 氣相沉積（PECVD)進行鍍膜，鍍上一層氧化矽之透 1273026 明保護膜，該保護膜之厚度為600nm，進行鍍膜之 射頻功率為400瓦，HMDS與氧氣之氣體比為15 比1，氣壓為68m托爾。並經剝離測試、浸泡 之濃鹽水24小時及置於溫度5〇度、濕度95%之環 境測試24小時’測試結果係指該薄膜仍可保持完整 及良好之附著性。 [實施例3]厚壓克力基板進行表面改質 步驟（1):該100xl〇〇mm、厚度5mm之透明壓 克力基板51放置於一不銹鋼之真空腔體4之基板座 5，利用該幫浦裝置9抽氣至8xl〇-5托爾，接㈣ 閉該氣壓控制閥8，並使該幫浦裝£ 9維持抽氣。 ❿ 步驟（2):通入-氫氣⑴，其流量為1〇〇〇 seem，使該真空氣壓係維持於5托爾，該陰極電極 6與基板座5係引人冷卻水冷卻’該基❹$係為 :接電位，該基板座與陰極電極之距離12為⑺公 分’其之間係具有陽極電極6 ’該陽極電極6係為 接地。開啟一直流脈衝電源供應器1〇產生電漿，其 脈衝直流放電電壓係為38〇伏特，工作頻為 1 OOKHz，處理功率為瓦，處理時間為1 $分鐘 步驟(3):待㈣克力基板51進行表面改質後， :堡克力基板51取出’置於另一真空腔體4以雙磁 控濺射鍍上三層薄膜，該三層薄膜係為一厚度— 1273026 之氧化矽薄獏、一厚度20nm之鋁薄膜及一厚度 jOOnm之二氧化矽薄膜，使該基板51呈半透明，其 可^光穿透率約為60%，並進行剝離測試、浸泡2〇% ^缚鹽水24小時及置於溫度50度、濕度95%之環 兄、j忒24小時，測試結果係指該薄膜仍可保持完整 及良好之附著性。 、 綜上所述，本發明塑膠基板低溫表面改質之方 • 1可有效改善習用之種種缺點，可使不同厚度之塑 膠基板皆可進行表面改質，並於改質過程中保持低 溫，使該塑膠基板不會熱變形，該基板經改質後以 :同之真空鍍膜法鍍膜，該鍍膜皆能保持良好之附 著力，進而使本發明之産生能更進步、更實甩、更 寸3使用者之所須，確已符合發明 件’麦依法提出專利申請。要 • 惟以上所述者，僅為本創作之較佳實施例而 已’ §不能以此限定本發明實施之範圍；故，凡依 本=明申請專利範圍及發明說明書内容所作之簡單 的等效變化與修飾，皆應仍屬本發明專利涵蓋之範 1273026 【圖式簡單說明】 第1圖，係本發明之流程示意圖。 第2圖，係本發明之適用裝置結構示意圖。 第3圖，係本發明之實施例裝置結構示意圖。 【主要元件符號說明】 步驟（1)1 步驟（2)2 步驟（3)3 真空腔體4 基板座5 基板51 陰極電極6 陽極電極7 氣壓控制閥8 幫浦裝置9 直流脈衝電源供應器10 氣體11 氫氣m 陰極電極與基板座之距離12The potential of the substrate holder and the cathode electrode is (7) cm. There is an anode electrode 7 therebetween, and the anode electrode 7 is grounded. The on-current pulse power supply 1 is turned on to generate plasma, and the DC pulse discharge voltage is 38 volts, the operating frequency is ΙΟΟΚΗζ, the processing power is 8 watts, and the processing time is 1 〇 minute. Step (3): After the surface of the acrylic substrate 51 is modified, the acrylic substrate 51 is taken out, and placed in another vacuum chamber 4, and a double magnetron is used to inject a film of the first sulfur dioxide film. The film has a thickness of 500 il, and is subjected to a peeling test, immersing 2% by weight of concentrated brine for 24 hours, and being placed in an environment of temperature 50 degrees and humidity of 95% for 24 hours. The test result means that the film can remain intact and adhere well. Sex. [Example 2] Surface modification and plasma-assisted chemical vapor deposition (PECVD) coating of an acrylic substrate The conditions and methods for surface modification of the acrylic substrate 51 are the same as those of the first embodiment ( 1) Same as step (2). In addition, in the step (3), the present embodiment is coated by plasma-assisted chemical vapor deposition (PECVD), and is coated with a yttria-permeable 1273026 clear protective film having a thickness of 600 nm, and the RF power of the coating is performed. For a 400 watt, the ratio of HMDS to oxygen gas is 15 to 1, and the gas pressure is 68 m. It was tested by peeling test, immersed in concentrated brine for 24 hours, and placed in an environment of temperature of 5 Torr and humidity of 95% for 24 hours. The test results indicated that the film remained intact and good adhesion. [Example 3] Surface modification step of a thick acrylic substrate (1): The transparent acrylic substrate 51 of 100 x 1 mm and 5 mm thickness is placed on a substrate holder 5 of a stainless steel vacuum chamber 4, The pump device 9 is pumped to 8xl 〇-5 Torr, and (4) the gas pressure control valve 8 is closed, and the pump is installed to maintain the pumping. ❿ Step (2): pass-hydrogen (1), the flow rate is 1 〇〇〇 seem, the vacuum pressure system is maintained at 5 Torr, and the cathode electrode 6 and the substrate holder 5 are cooled by cooling water. The system is: connected to the potential, the distance between the substrate holder and the cathode electrode 12 is (7) centimeters 'with an anode electrode 6' between the anode electrode 6 is grounded. Turn on the DC pulse power supply 1〇 to generate plasma, the pulse DC discharge voltage is 38〇V, the working frequency is 1 OOKHz, the processing power is watt, the processing time is 1 $ minutes Step (3): Wait (4) After the substrate 51 is surface-modified, the Fort-German substrate 51 is taken out and placed in another vacuum chamber 4, and a three-layer film is deposited by double magnetron sputtering. The three-layer film is a thickness of 1273026.貘, a 20nm thick aluminum film and a thickness of jOOnm cerium oxide film, the substrate 51 is translucent, its light transmittance is about 60%, and peeling test, soaking 2〇% ^ salt water 24 hours and placed at a temperature of 50 degrees, 95% humidity, 24 hours, the test results that the film can still maintain intact and good adhesion. In summary, the low temperature surface modification of the plastic substrate of the present invention can effectively improve various disadvantages of the conventional use, and the plastic substrates of different thicknesses can be surface-modified and kept at a low temperature during the upgrading process. The plastic substrate is not thermally deformed, and the substrate is modified by the same vacuum coating method, and the coating can maintain good adhesion, thereby making the invention more progressive, more practical, and more compact. The user's needs have indeed met the invention patent 'Mc legally filed a patent application. The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the practice of the present invention; therefore, the simple equivalent of the scope of the patent application and the contents of the invention specification Variations and modifications should still be covered by the patent of the present invention. 1273026 [Simplified description of the drawings] Fig. 1 is a schematic flow chart of the present invention. Fig. 2 is a schematic view showing the structure of a device suitable for use in the present invention. Fig. 3 is a schematic view showing the structure of an apparatus according to an embodiment of the present invention. [Description of main component symbols] Step (1) 1 Step (2) 2 Step (3) 3 Vacuum chamber 4 Substrate base 5 Substrate 51 Cathode electrode 6 Anode electrode 7 Pneumatic control valve 8 Pump device 9 DC pulse power supply 10 Gas 11 Hydrogen m Cathode electrode and substrate holder distance 12