TWI272730B - Method for growing group-III nitride semiconductor heterostructures on silicon substrate - Google Patents

Abstract

The present invention provides a method for forming group-III nitride semiconductor heterostructures on a silicon (111) substrate using a coincidently matched bilayer buffer grown on the Si (111) substrate. The coincidently matched bilayer buffer comprises a single-crystal silicon nitride (Si3N4) layer that is formed by introducing active nitrogen-plasma or ammonia to the Si (111) substrate at high temperature to form a single-crystal silicon nitride layer on the Si(111) substrate. Then, an AIN buffer layer or other group-III nitride layer is grown epitaxially on the single-crystal silicon nitride layer. Thereafter, the GaN epitaxial layer or group-III semiconductor heterostructures can be grown on the coincidently matched bilayer buffer.

Description

1272730 ------——————————— --- V. DESCRIPTION OF THE INVENTION (1) · 1. Technical Field of the Invention The present invention relates to a semiconductor structure, and more particularly to a A method of growing a Group III nitride semiconductor heterogeneous crystal structure on a tantalum substrate. 2. [Prior Art] The structure of a semiconductor light-emitting diode (LED) includes at least a substrate, a light-emitting hetero-epitaxial structure, and a pair of electrodes for driving the diode to emit light. The substrate can be transparent or opaque. In the application of short-wavelength semiconductor light-emitting diodes, the main light-emitting structure is a material of gallium nitride (G a N ; ga 1 1 iumnitride), and the substrate thereof can be a transparent and insulating substrate. Such as sapphire substrate. Generally, in the method of solving the large lattice mismatch between the epitaxial film and the insulating substrate, a buffer layer is grown on the sapphire substrate before the formation of the light emitting diode heterogeneous epitaxial structure. Or a nucleation layer. Among these methods, the buffer layer is used to control the formation of the nucleation of the epitaxial film and to reduce the occurrence of epitaxial film defects. Group II nitride semi-V body layers (such as gallium nitride, indium nitride, aluminum nitride, and alloys of these nitrides) are the choice of allowable materials, especially in light diodes and blue laser diodes. The research report has pointed out that, besides, the tri-family nitride will become the former, and the tri-nano-nitride has become the main body of the full-color or white light source (LDs; laser diode). . It is also a widely used semiconductor material that has been used as a material for photovoltaic applications. In the intended application, it is used as a light-emitting layer, but it is stored.

Page 6 V. Inventive Note (2) There is a material for the substrate that matches the substrate with a nitrided lattice (S i C; silicon material. However, in addition to the insulation of sapph ire and the cost is relatively large, the size of the carbonized twin is difficult. In contrast, the stupid crystal technology will be able to be made up of nitride-based extracts. Oxidized carb i de) is a feature that will make other aspects of the circle also make it grow up in Shi Xihe. The various new light layers are lacking in the formation of epitaxial crystals, and there is a lack of crystallinity mismatch between the two commonly used growth substrates of carbon dioxide (Al2〇3; sapphire) and nitride. The process of the component is more difficult for the microelectronics technology and the type function of the main material of the substrate, which is the main material of the substrate with the finite price of the stone and the anti-fossil-based substrate. For the gallium nitride substrate on the Shixi substrate, it is pointed out that the gasification chain buffer layer can provide more than two: long = production. However, 'Ming materials and Shiyue materials are between each other::3 luminescence experiments prove that the conditions are a total of 57rc, which is the growth temperature in the buffer layer. Therefore, Mingshi and Shiyue are at the interface of 820°c. ) Very high severity '❿ in the epitaxial layer and the tantalum substrate:: The phenomenon of interdiffusion is very high and causes the quality of the epitaxial layer to decrease. k is a non-deliberate high doping concentration of three materials [Summary of the invention] The main purpose of the present invention is to provide a one-to-one solution to the problem of inter-diffusion between the two-layer buffer structure of the chain/石夕 interface between the bottom of the raft. .

Page 7 1272730 V. DESCRIPTION OF THE INVENTION (3) Another object of the present invention is to provide a nitrided/nitridium nitride double capable of forming a coincident lattice (c 〇incident 1 a 11 ices ) having a special ratio lattice structure. Layer buffer structure to reduce the problems caused by lattice mismatch, and can be used to grow south quality stupid film. In accordance with the above objects, the present invention provides a buffer structure to solve the problem of autodoping, and an interface between aluminum/stones when a single-crystal aluminum nitride (0 0 0 1 ) buffer layer is formed. The problem of internal interdiffusion caused. The method comprises the use of a single crystal germanium substrate having a 晶 1 1) crystal orientation surface, the surface of which may be subjected to a thermal degassing step to remove surface remodeling in the native oxide layer. Next, in accordance with a feature of the present invention, a (double) buffer structure is formed on the (111) crystal orientation surface of the tantalum substrate. The double-layer buffer structure comprises a single crystal nitride layer and a nitride layer or a other group III nitride layer on the single crystal tantalum nitride layer. Then, a gallium nitride stupid layer can be grown on the double buffer layer. The proposed mechanism of the double layer buffer structure of the present invention has a preferred advantage for heterogeneous epitaxial formation with large lattice mismatch. In addition, for the gallium nitride heterogeneous epitaxial growth on the coffin, a lattice having a coincidence lattice constant ratio of 1: 2 and 5: 2 can be formed in the single crystal tantalum nitride (0 0 0 1 ), respectively. / Single crystal germanium (111) and single crystal aluminum nitride (〇〇〇1) / single crystal tantalum nitride (0 0 0 1 ) interface, so it can be used to form a high quality double buffer structure. Further, since the single crystal tantalum nitride can be used as the diffusion resistance layer, the problem of the mutual diffusion of the interface between the aluminum/germanium can be solved by the double buffer structure.

1272730 V. INSTRUCTIONS (4) In addition, the heterogeneous removal of the semiconductor semiconductor remains and forms a layer of cerium nitride on the substrate of the ruthenium substrate, and the substrate is cleaned on the ruthenium substrate. The layer is formed by using a stupid crystal into an aluminum nitride layer. The invention provides a method for forming a trivalent nitride epitaxial structure formed on a tantalum substrate, which comprises a square (1 1 1 ) crystal which is degassed by heat. The thin oxide layer remaining on the surface of the stone substrate was reconstituted. Next, a feature of the present invention is a clean 矽 double layer buffer structure. The double-layer buffer structure comprises a single single crystal tantalum nitride layer by introducing an active nitrogen plasma to the (1 1 1) crystal surface to form a single crystal tantalum nitride layer, followed by a nitride buffer layer. Or a other group III nitride is formed on the single crystal tantalum nitride layer. Next, a Group III nitride heteroepitaxial structure is formed in the same manner as in the fourth embodiment. [Embodiment] Some embodiments of the present invention will be described in detail below. However, the present invention is not limited to the scope of the invention, and the scope of the invention is not limited by the scope of the invention. In accordance with the present invention, a method and structure are provided to improve the problem of internal interdiffusion (i n t e r - d i f f u s i ο η ) located between the aluminum/germanium and the gallium/stone. Heterogeneous crystal structure of group-III nitride on Shixia substrate has recently been applied to photoelectric, microelectronic and surface acoustic wave elements.

Page 9 1272730 V. Description of invention (5) '' ------ Use Λ. 12 has a large size of usability (single crystal slab substrate - large-scale sputum), low cost and enamel substrate with good crystal quality.矽, also have good material properties, such as doping characteristics (bipolar and 冋 carrier; Chen), c lea v able, good heat conduction 11 (the force is twice as large as sapph i re) And has more mature process technology. The advantages of these tantalum substrates can be used to develop many new Group III nitride materials, and can be used to integrate gallium nitride and Shi Xi components. The reason for this is that the growth of gallium nitride heterogeneous epitaxial grains on the sputum is feasible, due to the hexagonal wurtzite (0001) crystal plane and cubic diamond or flash ore ( Cubic diam〇nd 〇r zinc — The (111) crystal orientation surface can be formed by the characteristics of wafer mismatch. The stacking buffer structure consists of several layers, each of which has layers/layers and layers/bottoms. The characteristics of the coincident lattice of special proportions are formed between the interfaces of the materials. In the embodiment of the present invention, the growth of the high-quality group III nitride heteroepitaxial growth on the tantalum substrate is utilized separately. In cold-nitriding crucible (〇〇〇i) / 矽 (1 ii) (call - s ^ 仏 ( oooi) / si (m)) and aluminum nitride (0 0 0 1 ) / 0 - tantalum nitride ( 〇〇〇1)(ai3n4 ( 000 1 )/ /3 -Si3N4 ( 0 0 0 1 )) interface: 2 and 5:2 special ratio lattices to form a double buffer structure. By using this buffer The technique of the structure can solve the problem of automatic doping and the problem of internal interaction diffusion caused between aluminum/germanium in the embodiment of the invention. As shown in the experimental results of the following examples, the epitaxial quality of the gallium nitride film can be simultaneously improved.

1272730 V. INSTRUCTIONS (6) The nitride film on the Shixi substrate has nearly 2 〇. 4 percent in-plane lattice mismatch (three (a) a a (nitriding) Gallium)) / a (gallium nitride, a (gallium nitride) (〇〇〇i) = 3.189A; a (矽) (111) = 3·840Α) and a large thermal expansion coefficient mismatch. Fortunately, The lattice matching can be reduced by using a buffer layer having a special ratio of lattice conditions. For example, in Niobium (0001) (a (aluminum nitride) ( 00 0 1 ) = 3.112 Α) and 矽 ( 111) When the special ratio lattice is 5:4, the effective lattice matching can be reduced from +2.3% to -ΐ·3 percentage. Therefore, the lattice deformation can be reduced. A mode of two-dimensional smooth heterogeneous crystal growth is obtained. Growth Process In the embodiment of the present invention, a molecular-beam epitaxy (MBE) device is used, and the device is equipped with radio frequency (RF; radio frequency) Nitrogen plasma source. In the molecular beam epitaxy, the inverse degree of gallium and gold nitrogen is in the stupid crystal wave of the Shixi substrate (111 step by step, by means of REFLECTING

The basic pressure of the chamber is 6 * 1 0-11 Torr (t 〇 r r), and the high-genus and molecular beam source of aluminum metal (MBE effusion cel 1) is used. It was purified by a nitrogen purifying device before being introduced into the plasma source. Nitrogen plasma was produced using the same conditions during growth. The power of the shot is about 450 watts and the flow rate of nitrogen is 〇·5 sccin. Prior to loading into the molecular beam reaction chamber, the substrate is etched by chemical etching to the surface of the substrate. The substrate of (111) crystal orientation surface is further i. The on-site thermal degassing method is utilized to remove the residual native oxide layer. The other processing steps described in the above-mentioned (1 11) crystal orientation to the surface of the substrate can be performed] and the surface of the stomach is reconfigured' and by the high-energy electron diffraction at a substrate temperature of 80 ° C ( RHEED ; reflecti〇n high- 1272730 V. Inventive Note (7) Energy electron diffraction) The surface characteristics of the tantalum substrate can be confirmed. In addition, the reflective 咼 energy electron diffraction pattern can be used to indicate the quality and flatness of the surface of the ruthenium substrate prior to the epitaxial growth process. The substrate temperature of the substrate is 矽(1 1 1 ) crystal to the surface of the surface at a temperature of 8 7 5 . The (M7) transition of 〇 is obtained by (m) recombination phase transfer. In this embodiment, two different buffer layer systems are compared in the gallium nitride epitaxial growth on the surface of the germanium substrate (111). The two buffer layers of the system 2 are nitrogen. The only difference is that it is two; 统, 统, 一 曰曰曰 氮化 氮化 氮化 点 点 (point __) (its thickness is approximately, confirmed by transmissi〇n electron microscopy) The obtained knot can be made by using (111) crystal orientation surface 矽 substrate #/ early day 虱 矽 矽 layered nitrogen plasma in the substrate temperature production is two U table, chemicalization and utilization of live. The thickness is 30 C, time For 30 seconds, the shape of the singularity, the smashing of the Xuanxun buffer layer is 〇1 2 micro, the growth rate and the growth temperature is 82 (rc strip / 0.12 ^ card into In addition, the growth of the buffer layer is thick n': the day-to-day growth of the cat is formed at a lower substrate temperature (about:=m, gallium nitride worm crystals, 08 micron). 8. The growth rate is 2 hours after the growth of plasma, and after 2 crystal growth, it can be observed at 600 t: (growth of gallium surface (cooling to 500 to the surface characteristics of this gallium nitride) For the /) / ^ 1 structure, which can be referred to as Polarity).

1272730

_ # i ί ί Figure 1 is a flow chart showing the method of the present invention for the surface structure of the substrate on the (1) crystal orientation surface. Step 1 represents the (ui) crystal orientation oxide layer: and the heat treatment method removes the native atomic flat and reconstituted surface of the Shixi substrate. (1 1 1 ) Crystalline surface material can be produced by the above preparation method. The surface reconstruction of the ruthenium substrate (7*7) can be confirmed on the 800/Λ4 structure surface by the reflective high-energy electron diffraction pattern. characteristic. Step 2 denotes that the surface of the substrate is: 矽 矽 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面= Ϊ Ϊ ” step, according to the flow rate of the aluminum molecular beam and under the condition of closing ,, • forming a single atom on the single crystal yttrium nitride layer, located in the 々彳ί t S咼 temperature tempered aluminum predeposited atomic layer to form a Aluminum nitride, above the mouse fossil layer (step 4). Then, the nitriding layer is stretched to form an aluminum nitride buffer layer over the single crystal tantalum nitride layer (step 5) 吖: 1 A gallium nitride film of a polar surface of a gallium atom is formed on the buffer layer, and a heterogeneous structure of a group III nitride semiconductor is formed over the nitride buffer layer (step 6). Figure 2A, 矽 substrate] [Tanning system using thermal degassing treatment, or - passivation treatment (wet etching or on-site nitrogen plasma treatment) to remove the original oxide layer 1 using the thermal degassing treatment step prepared by the bottom Material 1 Q can produce (7*7) kneading surface reconstruction characteristics, and can utilize reflective high-energy electricity; the diffraction pattern confirms its characteristics at 8GG t. In addition, reflective high-energy electrons

Page 13 1272730

The diffraction pattern indicates the quality of the reconstructed tantalum surface prior to the epitaxial growth process. The substrate temperature is corrected using (1) twins to the surface of the surface of the bottom 2 at a temperature of 875. The (7*7) conversion to the (1*丨) phase transfer is obtained. J ^ Next, according to the features of the present invention, the diffusion barrier layer 12 is a single crystal tantalum nitride layer which is produced by the nitridation of the (111) crystal surface to the surface of the substrate. The active nitrogen gas nozzle is introduced into the active nitrogen gas nozzle at a temperature of 9 〇 0 C to form a single crystal nitrogen layer. In the present invention, (=) \ water surface bismuth telluride (single crystal yttrium nitride) layer (000 1 1 2 can be produced by the introduction of reactive nitrogen or by the introduction of thermally cracked NH3, when the surface of the (1 11 ) surface substrate is slightly higher than the si (丨丨丨) phase transition. Temperature (transferred from (7*7) to (m) phase), can produce single crystal Si3N4(〇〇〇l) - (4*4) surface reconstruction (in the crystal lattice of (111) crystal orientation surface 矽 substrate In terms of parameters, it can also be called “(8*8)” surface reconstruction). In the reflection-type electron diffraction diagram, it can be shown that the active nitrogen plasma is introduced into the (111) crystal surface to the bottom. The surface of the material is at a temperature of 9 〇〇r and its time is 30 seconds, "(8*8)" reconstructed reflective high-energy electron diffraction pattern. Reflective high-energy electron diffraction pattern table Two different surface atomic orders are shown on the stone-nitridite layer (0 0 0 1 ) 1 2 , one of which conforms to the uppermost layer of (8/3*8/3)”-structured nitrogen-adsorbing atoms ( Adat〇ms) and another surface order conforming to, (8*8), the lattice period. In the scanning tunneling microscopy (STM, Scanning Tunneling Microscopy)

Page 14 1272730 V. INSTRUCTIONS (10) During the test, it can be confirmed that the π ( 8 * 8 ) '' lattice period is a single crystal (〇〇〇丨) crystal plane cold-tantalum nitride surface reconstruction Unit cell. Next, the nitrogen is deposited on the surface nitrogen layer as shown in the second C-graph of the atomic layer 14 above the high temperature tempering layer 1-2. The nitrogen adsorption of the reflective high energy layer is smooth. Here, the pattern of the shot is determined along the -1 -1 0)16 system. Next, the gasification of the gasification of the nucleus in the double-layered buffer structure system with the nitriding chain buffer layering of the buffer layer 16 begins as shown in Fig. 2B and . In the pre-deposition step, ruthenium was deposited for 5 seconds, and a single aluminum was formed on the (111) crystal to the surface of the substrate. The atomic layer is then pre-deposited to form an aluminum nitride layer on the single crystal nitride and the nitride (M 0 0 1 ) - ( 1 * 丨) structure is shown in an instant electronic diffraction pattern (not shown). It is pointed out that the aluminum atom is bonded to the uppermost sub-layer to form a layer of aluminum nitride ruthenium 6 and its surface is very large. Note that 'reflective high-energy electrons can be used to bypass the cold-zinc nitride (2 - 1 - 1 0 ) 1 2 And aluminum nitride (the distance between the 2-way and the coincident crystals has an integer ratio cyclically. The stupid crystal growth mode forms 16 ° above the single crystal tantalum nitride layer 丨2. Buffer structure, 〇 and its growth rate is n, ten ^ : 曰曰 growth of the dish in the 820 layer 20 is longer than the single crystal ^ 12 broken rice. Then, the gallium nitride epitaxy is 240 microns On the V handle layer 16, the thick crystal growth rate of the gallium carbide remote layer 20 produces a lower substrate temperature growth (about 72 〇. 〇), and its insect 'utilizes double buffer. After the crystal growth, the gallium nitride 2 傅 傅 〇 cooled to 500 艺 to 6 〇〇

1272730 V. Description of invention (11). (: 'and (2*2) reconstruction pattern of a strip of gallium nitride layer 20 having a nitrogen plasma gas flow. H豕 atomic surface polar structure of Π: : ϋ 图, 's the present invention provides a The double-layer buffered junction f 1 ^ $ one-pole body, 纟0 structure to solve the problem that when the single-crystal aluminum nitride is automatically changed and the layer is formed in the second layer of the interface, it is provided in the present invention. a lattice constant of 3.840 angstroms) of the surface of the ruthenium substrate (the ill splicer on the plane forms a double buffer structure on the substrate 1 of the present invention, the double buffer structure The semiconductor can be improved; a η 1 ϋ μ g ^11 internal enthalpy interdiffusion problem, wherein the double buffer layer comprises a single crystal yttrium nitride layer (〇〇〇Ul2 苴 lattice constant is 7.61 angstroms, and The aluminum nitride layer (0 0 0 1 ) 16 on the single crystal tantalum nitride layer 12 has a lattice constant of 3 · 11 2 angstroms, and the yttrium is in the moon. A (1*1) reflective high-energy electron diffraction pattern can be displayed, and the aluminum nitride buffer layer 16 can be made of a high-quality thin surface having a flat surface by the diffraction pattern. , "Molecular beam epitaxy can be used to form a gallium nitride epitaxial layer 2 〇 or a group III nitride semi-body worm crystal structure, which can also be used in a reflective high-energy electron diffraction pattern. The film product after the growth of the subsequent gallium nitride layer is displayed. In the present invention, the reflective high energy electron diffraction pattern can be used to determine the coincidence interface of the i:2 and 5:2 special ratio lattice structures respectively formed in the ^_nitrogen矽 (0001) / Shi Xi (111) and nitride I (0001) / nitrite 〇〇〇 (〇〇〇 1). ^ 1272730 V. Description of invention (12) In addition, can be reflected by high-energy electrons The following epitaxial alignment relationships were found in diffraction patterns and X-ray diffraction studies: β -Si3N4 ( 0 0 0 1 ) II Si (111 ) ; ^ ~Si3N4 [ 0-11 0 ] I |Si[11^2 b-Si3N4[2-1-10]||Si [-110] and A1N( 0 0 0 1 )1| b-Si3N4 (0001); A1N[0-110]||b~Si3N4[0- 110]; A1N[2-ll〇]||b one

Sis I [2-1-1 0 ]. Therefore, the c-axis of gallium nitride/aluminum nitride/yttria is perpendicular to the surface of the (1 1 1 ) crystallite substrate.

Since gallium nitride epitaxial growth is carried out under the same growth conditions on different buffer structures (all containing an aluminum nitride buffer layer), in order to compare the effects of these different buffer structures on the properties of the epitaxial film, secondary ions Measurements such as secondary-ion mass spectroscopy (SIMS), χ-ray diffraction, photoluminescence (PL), and Raman scattering were used to compare these with/without stone-nitrogen. The influence of the buffer structure of the ruthenium layer on the structural properties and optical properties of the gallium nitride epitaxial film. Next, the third figure shows the use of secondary ion mass spectrometry for a gallium nitride film grown with a single crystal aluminum nitride/single crystal nitride double layer buffer structure (a) and an aluminum nitride single layer buffer structure (b). An indication of the 矽/aluminum elemental analysis in the vicinity of the depth range of the gallium nitride film/buffer structure/substrate male surface region. First, the distribution of the heterogeneous mass in the growth direction can be detected by secondary ion mass spectrometry. ^ In order to study the automatic growth of gallium nitride on the (111) crystal surface to the surface of the substrate.

1272730 V. INSTRUCTIONS (13) Doping effect, in the φ # ^ % AV ^ ^ of the present invention, is for samples of two buffer structure systems, for the gallium-imide layer/aluminum nitride layer and the二次 虱 虱 虱 虱 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近 附近From this measurement, it can be determined that the nitrogen is determined by the L 旦 旦 L L 具有 具有 具有 具有 具有 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 β β β β β β β β β S 绫 冲 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上(〇〇J) The U layer can also prevent the diffusion of the precursor to the % substrate. In the sample containing m =, the sample t element is smaller than the sample of the non-IS antimony diffusion suppression layer. Nearly an order of magnitude. Therefore, -2子Ϊ : Ϊ ^ : 5 can show that the single crystal tantalum nitride layer can diffuse to the aluminum nitride layer and nitrogen during the high temperature growth of the nitrided layer and the coughing and twisting day layer. The gallium layer is layered and the aluminum is inhibited from diffusing to the tantalum substrate. Referring to the fourth and fourth maps, it is indicated that the gallium nitride film is not

Comparison of optical properties on the buffer structure. In the low temperature (6.7 κ 1 spectrum, the GaN film is grown on the aluminum nitride/tantalum nitride/矽1 layer buffer structure, the neutral ferrite of the gallium telluride film binds the excitons; the neutral-donor -bound exciton) The illuminating peak* is smaller than the nitriding/second (111) single-layer buffer structure

1272730 V. INSTRUCTIONS (14) The full width and width values of the fluorescence spectral wave ♦ are consistent with the results of the hunting by the atomic force microscopy (Ul2mevvs· 2〇meV) vs· 1· 1*1 〇9 cur2). Proof - defect defect (7 * 1 〇 8 cm - 2 improvement. Within the fourth gray figure; ϋ in the epitaxial layer crystal quality growth in aluminum nitride / tantalum nitride / 矽 (11 〇:, The system is at different temperatures, the peak position of the light is at a temperature higher than 7〇κ日, and the main peak of the gallium sample is emitted by the neutral donor-bound exciton emission to the emission of the photoluminescence spectrum FX from the 3 (70 kB approaches the free exciton; El〇C), where kB is the Boltzmann constant. The localized energy of the scorpion (sample of the buffer structure, its neutrality, ^ f This characteristic, monotonously rising for the increase of the temperature of the single layer, represents that the position of the 'primary exciton peak is very large with concentration. Therefore, this is consistent with the above-mentioned fruit from the second A (Yuanzi) in this sample. ——The junction obtained by the human ionic mass spectrometer refers to the fourth B diagram, which indicates that the 罄 本 本 铉 铉 τ τ τ τ 从 从 从 从 从In the double-buffer structure -, first the first funding ~'Χ strength and neutral administered sub-bound exciton intensity production of Pu in the nitride film growth πχ clock fluorescent light shoots on a single layer of the buffer structure, bearing

Schematic diagram of Arrhenius. According to Arrhenius, the activation energy on the aluminum nitride/tantalum nitride/niobium (1U) double-layer buffer structure is obtained by fitting the thermal activation relationship to a value of about 25 meV. The results of the study on the activation energy value of FX in undoped gallium nitride are consistent in the literature. In addition, the non-radioactive recombination activation energy of neutral-strength-bound excitons in gallium nitride grown on an aluminum nitride/germanium (111) monolayer buffer can be fitted using two thermal activation energies (Eai and Ea2). Fitting the Eai and £^ phase

1272730

In addition, in the present invention, when the Raman scattering is used to measure the ratio of the = stone system to the = layer system, the growth of the nitrogen substrate in the cleaved substrate (1) to the surface is referred to the fifth figure, and the backscattering geometry is expressed. The polarization polarization branch spectrum, the incident light direction is the growth direction along the nitrogen 51 direction, and the light source with the 虱 ion laser having a wavelength of 51 4 5 water, both of which can be obtained ~520^ Raman signal. In addition, childbirth. In addition, in the growth of the double-layered two-page pull and the product part, you can get the ^(1^) band (the gallium nitride film on the 73,,, ° structure) "(10) The presence of the signal represents the double: (The two samples have a high-quality lattice. At the same time, the ratio of the strength of the 2: grown gallium nitride film to the E 2 Raman signal is: : 3. In the absence of the material = rumors: A i ( L 〇) A1 (L〇) ^Ε2Χ obtained by double-layer buffer structure is measured to be slightly larger than 3), indicating that the carrier concentration is only slightly higher, which is 1:3.3 (only a slight concentration. This result is related to: secondary ion The f-spectrometer has a carrier property of the gallium layer, and shows that the nitrided layer is formed on the tantalum substrate of the (111) crystal orientation surface by using the nitrided/nitrided layer. The growth nitrogen has a lower concentration of ruthenium, so the cadmium layer in the autodoping layer can be greatly reduced. The above description is only a preferred embodiment of the present invention and is not intended to be limited.

1272730

Page 21 1272730

The formula 1 briefly describes the technique of the family nitrogen system. "The growth of the substrate on the eve of the substrate is three; /, the flow chart of each step in the method of daily life, and the structure of the mouth. The growth of the substrate 1 is as follows: to the second to the D The technology disclosed in the present invention grows on the 矽 知 氮化 氮化 氮化 丰 丰 丰 ζ ζ 简单 β β β β β β β β β β β β β β β ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; According to the technology disclosed in the invention, the invention discloses a double-layered buffer structure (a) having a buffering day and a single layer of aluminum nitride. The membrane is subjected to secondary ion mass spectrometry as a 矽/aluminum element analysis near the depth range of the nitriding plane region: Ί is based on the technique disclosed in the present invention, and is shown in (ι 11) crystal heart button. Upper Asia uses aluminum nitride/tantalum nitride double-layer buffer structure and i-fluorescent]: "Γ structure to grow gallium nitride insect crystal film low temperature light double S: optical spectrum comparison; "Interview: diagram: according to this The invention discloses a free exciton of a gallium nitride epitaxial film grown by an aluminum nitride/I layer buffer structure. FX) # 'neutral aluminum nitride grown on the gallium nitride epitaxial monolayer cushioning structure of membrane bound exciton = sub (D〇X) Arrhenius light induced fluorescence spectrum peak intensity of the pattern, and *

1272730 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a diagram showing the growth of a (111) crystal orientation surface 矽 substrate by an aluminum nitride/tantalum nitride double buffer structure and an aluminum nitride single layer buffer structure according to the disclosed technology. Schematic diagram of room temperature Raman spectroscopy of two kinds of gallium nitride epitaxial layers. Representative symbols of the main part: 1 0 矽 substrate 1 2 single crystal yttrium nitride layer 1 4 pre-deposited atomic layer 1 6 single crystal aluminum nitride buffer layer 20 gallium nitride layer with gallium atom surface polarity

Page 23

Claims (1)

1272730 _ Case No. 92128938 曰 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A double buffer structure is positioned over the single crystal germanium substrate having a (111) crystal orientation surface; and a group III nitride semiconductor structure is formed over the double buffer structure. 2. The method of forming a semiconductor structure according to claim 1 of the patent application, further comprising performing a surface reconstruction preparation step on the tantalum substrate having a (1 11 ) crystal orientation surface. 3. The method of claim 2, wherein the surface reconstruction preparation step comprises a thermal tempering step in an ultra-high vacuum. 4. The method of forming a semiconductor structure according to claim 1 of the patent application, further comprising: performing a surface preparation step on the tantalum substrate having a (111) crystal orientation surface. 5. The method of forming a semiconductor structure according to item 4 of the patent application, wherein the surface preparation step comprises cleaning the surface of the crucible with hydrogen plasma at a growth site. 6. The method of forming a semiconductor structure according to item 4 of the patent application, wherein the surface preparation step comprises a wet etching outside the growth chamber. Page 24 1272730 yf ^ _________ Case No. 92128938 Sheep k month: ^ 日佟π: __ VI. Patent application scope "" 1 ~' ' 7 · Patent scope 1st method of forming a semiconductor structure, wherein the above forms a double The layer buffer layer comprises: forming a crystal nitride layer on the stone substrate having a (111) crystal orientation surface; and 4 forming a group III nitride layer on the single crystal tantalum nitride layer. 8. The method of forming a semiconductor structure according to claim 7, wherein the forming the single crystal tantalum nitride layer comprises performing a nitrogen plasma thermal nitridation onto the fractured substrate having a (111) crystal orientation surface. 9. The method of forming a semiconductor structure according to claim 7, wherein the forming the single crystal tantalum nitride layer comprises performing an ammonia thermal nitridation onto the stone substrate having a (111) crystal orientation surface. 1 0. A method of forming a semi-conductor structure by applying a plurality of semiconductor structures, wherein said forming said single crystal nitride layer comprises performing a chemical vapor deposition onto said stone substrate having a (111) crystal orientation surface . 1 1 . The method of forming a semiconductor structure according to claim 7 , wherein the step of forming the group III nitride layer comprises: performing an aluminum pre-deposition step on the single crystal tantalum nitride without introducing the nitrogen plasma Forming an aluminum pre-deposited atomic layer over the single crystal tantalum nitride layer; performing a temperature tempering step on the aluminum pre-deposited atomic layer to form a single crystal nitride layer in the single crystal nitride layer Above; Page 25 1272730 〆k Case No. 92128938 W Year ^ Month Day Correction - \ —— — 1 —— — VI. Application for Patent Scope Execution of an aluminum nitride epitaxial growth in the single crystal aluminum nitride layer to form the three A family nitride layer is formed over the single crystal aluminum nitride layer. 1 2. A method of forming a semiconductor structure according to the first aspect of the patent application, wherein the method of forming the group III nitride semiconductor structure may be a chemical vapor deposition method. 1 3. A method of forming a semiconductor structure according to the first aspect of the patent application, wherein the method of forming the structure of the group III nitride semiconductor layer may be molecular beam epitaxy. 1 4. A method of forming a semiconductor structure according to claim 1, wherein the above-mentioned Group III nitride semiconductor structure may be a Group III nitride semiconductor single layer structure. A method of forming a semiconductor structure according to the first aspect of the patent application, wherein the above-mentioned group III nitride semiconductor structure may be a group III nitride semiconductor multilayer structure. 1 6. The method of forming a semiconductor structure according to claim 1, wherein the above-described group III nitride semiconductor structure may be a gallium nitride layer. 1 7. A method for growing a heterogeneous epitaxial structure of a Group III nitride semiconductor on a ruthenium substrate, which grows a heterogeneous epitaxial junction of a Group III nitride semiconductor on a ruthenium substrate Page 26 k for one of the (111) crystal orientation surfaces to be shredded; performing thermal gasification on the (111) crystal orientation surface of the Shimasson / into a single crystal tantalum nitride layer having a (1 1 1 ) crystal orientation On the surface of the substrate, f is not subjected to the thermal nitridation to perform an aluminum pre-deposition step on the single tantalum nitride layer to form an aluminum pre-deposited atomic layer on the single crystal nitride Performing a temperature tempering step on the aluminum pre-deposited atomic layer to form a single crystal f-aluminized layer over the single crystal tantalum nitride layer; 09 rat performing an aluminum nitride epitaxial growth on the single crystal nitrogen Above the aluminum layer; and forming a group III nitride semiconductor structure over the aluminum nitride epitaxial layer. 1 8 · A method for growing a Group III nitride V-body heterogeneous epitaxial structure on a ruthenium substrate, as in claim 17, further comprising performing a tempering step under ultra-high vacuum to have (1 1 1 ) The substrate is crystallized to form a reconstituted, stone substrate. Fan Li specializes in Zhongweiwei M crystal surface 1 Table IX IX The first π method I - square structure crystal m 晶磊 has 11 贝 and (rH is different (1 body 矽 矽 矽 向 向 向 向 向 向The growth of the Group III nitride on the substrate is carried out by performing an on-site hydrogen plasma cleaning to form an atomic degree. The growth of the group III nitrogen on the substrate is as described in the 17th article of the patent application. The method of compounding a semi-V body heterogeneous stupid structure' further includes performing a growth cavity Page 27 To form a flat (1 1 1 ) crystal orientation surface of the stone substrate having a (111) crystal orientation surface. 21·If you apply for the patent scope, item 17 in the 矽 材 卜 卜 从 从 从 & & & 增 增 增 增 增 增 增 增 增 增 增 增 增 增 增 增 增 增 增 增 y y y y y y y y y y y y y y y y y y y Nitriding acts on the tantalum substrate of the (1 1 1 ) day-to-surface surface, and the Ηη曰△ main r is formed into the early crystalline tantalum nitride layer on the surface of the (111) crystal orientation surface. Above the substrate. 2 2 · If the patent application scope is in the 17th item, the method of heterogeneous epitaxial structure of the conductor is one, and the upper and lower x-nitrides are semi-nitrogen plasma. - The upper middle heat nitriding effect can be a 2 3 · If you apply for a patented dry circumference, the 17th item in the Loudi conductor, the nickname 曰纴 ΛΑ 4 4 ^ - - - - - - - - - - - - - - - - - - - - - A method of day-to-day structure, wherein the above tri-family structure may be a tri-family nitride semiconductor single-layer structure. ,, Feng conductor, -,. ΓΛ Λ Λ Λ 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 The semiconductor structure can be known as a nitride semiconductor multilayer structure. 25. A heterogeneous epitaxial junction having a group III nitride semiconductor = a semiconductor structure having a tri-nano-half (tetra) heterostructure; a substrate having a (11 1 ) crystal orientation surface; 1272730 Case No. 92128938 f year ^ month ^ day correction _ VI. Patent application range A double buffer structure is located above the germanium substrate having a (111) crystal orientation surface; and a triassic nitride semiconductor structure is located in the double layer buffer Above the layer. 2 6. The semiconductor structure having a heterogeneous epitaxial structure of a group III nitride semiconductor according to claim 25, wherein the double-layer buffer structure comprises a diffusion barrier layer located on the surface having a (1 1 1 ) crystal orientation surface Above the substrate. 2 7. The semiconductor structure having a heterogeneous epitaxial structure of a group III nitride semiconductor according to claim 25, wherein the material of the diffusion barrier layer is a single crystal nitride. 28. The semiconductor structure of claim 3, wherein the double buffer structure comprises an aluminum nitride layer over the diffusion barrier layer. A semiconductor structure having a Group III nitride semiconductor heteroepitaxial structure as claimed in claim 25, wherein the double buffer structure comprises a gallium nitride layer over the diffusion barrier layer. 30. A semiconductor structure having a heterogeneous epitaxial structure of a group III nitride semiconductor according to claim 25, wherein the double buffer structure comprises an indium nitride layer over the diffusion barrier layer. Page 29 1272730 Case No. 92128938 Amendment 6. Patent Application No. 3 1. A semiconductor structure having a heterogeneous epitaxial structure of a Group III nitride semiconductor according to the 25th patent application, wherein the above-mentioned Group III nitride semiconductor structure is a three-family Nitride semiconductor single layer structure. A semiconductor structure having a Group III nitride semiconductor heteromorphous structure, wherein the above-described Group III nitride semiconductor structure is a Group III nitride semiconductor multilayer structure. Page 30