TW200515614A - Method for growing group-Ⅲ nitride semiconductor heterostructures on silicon substrate - Google Patents

Method for growing group-Ⅲ nitride semiconductor heterostructures on silicon substrate

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Publication number
TW200515614A
TW200515614A TW092128938A TW92128938A TW200515614A TW 200515614 A TW200515614 A TW 200515614A TW 092128938 A TW092128938 A TW 092128938A TW 92128938 A TW92128938 A TW 92128938A TW 200515614 A TW200515614 A TW 200515614A
Authority
TW
Taiwan
Prior art keywords
substrate
iii nitride
layer
semiconductor heterostructures
nitride semiconductor
Prior art date
Application number
TW092128938A
Other languages
Chinese (zh)
Other versions
TWI272730B (en
Inventor
Shang-Jr Gwo
Chung-Lin Wu
Original Assignee
Shang-Jr Gwo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shang-Jr Gwo filed Critical Shang-Jr Gwo
Priority to TW92128938A priority Critical patent/TWI272730B/en
Publication of TW200515614A publication Critical patent/TW200515614A/en
Application granted granted Critical
Publication of TWI272730B publication Critical patent/TWI272730B/en

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Abstract

The present invention provides a method for forming group-III nitride semiconductor heterostructures on a silicon (111) substrate using a coincidently matched bilayer buffer grown on the Si (111) substrate. The coincidently matched bilayer buffer comprises a single-crystal silicon nitride (Si3N4) layer that is formed by introducing active nitrogen-plasma or ammonia to the Si (111) substrate at high temperature to form a single-crystal silicon nitride layer on the Si(111) substrate. Then, an ALN buffer layer or other group-III nitride layer is grown epitaxially on the single-crystal silicon nitride layer. Thereafter, the GaN epitaxial layer or group-III semiconductor heterostructures can be grown on the coincidently matched bilayer buffer.
TW92128938A 2003-10-17 2003-10-17 Method for growing group-III nitride semiconductor heterostructures on silicon substrate TWI272730B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92128938A TWI272730B (en) 2003-10-17 2003-10-17 Method for growing group-III nitride semiconductor heterostructures on silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92128938A TWI272730B (en) 2003-10-17 2003-10-17 Method for growing group-III nitride semiconductor heterostructures on silicon substrate

Publications (2)

Publication Number Publication Date
TW200515614A true TW200515614A (en) 2005-05-01
TWI272730B TWI272730B (en) 2007-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW92128938A TWI272730B (en) 2003-10-17 2003-10-17 Method for growing group-III nitride semiconductor heterostructures on silicon substrate

Country Status (1)

Country Link
TW (1) TWI272730B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109599462A (en) * 2018-11-30 2019-04-09 中国科学院半导体研究所 The In ingredient enriched nitride material growing method of N polar surface based on Si substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809852B2 (en) * 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
TWI696822B (en) 2015-10-05 2020-06-21 財團法人工業技術研究院 Carrier concentration measuring method and equipment thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109599462A (en) * 2018-11-30 2019-04-09 中国科学院半导体研究所 The In ingredient enriched nitride material growing method of N polar surface based on Si substrate

Also Published As

Publication number Publication date
TWI272730B (en) 2007-02-01

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