TW200515614A - Method for growing group-Ⅲ nitride semiconductor heterostructures on silicon substrate - Google Patents
Method for growing group-Ⅲ nitride semiconductor heterostructures on silicon substrateInfo
- Publication number
- TW200515614A TW200515614A TW092128938A TW92128938A TW200515614A TW 200515614 A TW200515614 A TW 200515614A TW 092128938 A TW092128938 A TW 092128938A TW 92128938 A TW92128938 A TW 92128938A TW 200515614 A TW200515614 A TW 200515614A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- iii nitride
- layer
- semiconductor heterostructures
- nitride semiconductor
- Prior art date
Links
Abstract
The present invention provides a method for forming group-III nitride semiconductor heterostructures on a silicon (111) substrate using a coincidently matched bilayer buffer grown on the Si (111) substrate. The coincidently matched bilayer buffer comprises a single-crystal silicon nitride (Si3N4) layer that is formed by introducing active nitrogen-plasma or ammonia to the Si (111) substrate at high temperature to form a single-crystal silicon nitride layer on the Si(111) substrate. Then, an ALN buffer layer or other group-III nitride layer is grown epitaxially on the single-crystal silicon nitride layer. Thereafter, the GaN epitaxial layer or group-III semiconductor heterostructures can be grown on the coincidently matched bilayer buffer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92128938A TWI272730B (en) | 2003-10-17 | 2003-10-17 | Method for growing group-III nitride semiconductor heterostructures on silicon substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92128938A TWI272730B (en) | 2003-10-17 | 2003-10-17 | Method for growing group-III nitride semiconductor heterostructures on silicon substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200515614A true TW200515614A (en) | 2005-05-01 |
TWI272730B TWI272730B (en) | 2007-02-01 |
Family
ID=38441328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92128938A TWI272730B (en) | 2003-10-17 | 2003-10-17 | Method for growing group-III nitride semiconductor heterostructures on silicon substrate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI272730B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109599462A (en) * | 2018-11-30 | 2019-04-09 | 中国科学院半导体研究所 | The In ingredient enriched nitride material growing method of N polar surface based on Si substrate |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8809852B2 (en) * | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
TWI696822B (en) | 2015-10-05 | 2020-06-21 | 財團法人工業技術研究院 | Carrier concentration measuring method and equipment thereof |
-
2003
- 2003-10-17 TW TW92128938A patent/TWI272730B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109599462A (en) * | 2018-11-30 | 2019-04-09 | 中国科学院半导体研究所 | The In ingredient enriched nitride material growing method of N polar surface based on Si substrate |
Also Published As
Publication number | Publication date |
---|---|
TWI272730B (en) | 2007-02-01 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |