1271252 九、發明說明： 【發明所屬之技術領域】 本發明疋關於-種雷射無碎裂微加工，制是關於—種對玻璃、石英等材 料，以雷射蝕刻進行微加工之方法與裝置。 【先前技術】 微流體晶片目前在各種生化學反應或奈米顆粒製作上，已是常用之工具。製 作u肌體[時’需使时、^英、賴、轉特料製備微流體通道之基板。 利用微流體晶片進行各種實驗、製造或檢驗，可以減少樣本及湖之用量並易於 控制流程。成為業界十分需要的技術。 玻璃由於具有極佳的化學及熱穩定性，是_種製備微流體晶片常用的基板材 料在進仃生化反應時，玻璃不會呈現對蛋白質或其他化學物質之吸附。與其他 適合作為基板之材質如石夕、氮切（_4)相比，更適合用以製作微流體晶片。 在製作微流體晶片時，需要在晶片基板上形成微流體通道。最常見的微通道 製備方式域式侧。不過，在進行濕式侧時，f依據所欲形通道結構及 特性，反覆進行多次的光罩及微影製程。不但手續繁複、時間冗長且亦增加成本。 以雷射刻畫方式進行微通道加工可以克服上朝題，而可將製備_縮短，並能 製得以微影技術尚無法製得之構型。 然而，以雷射在玻璃基板上刻畫遭遇到兩項難題。_是當雷射光束之強度 (energydensity)經常造成玻璃基板碎裂。反之，如果雷射光束強度不足，則所 形成的溝_度及高寬比（aspeetmti。）補，从以供微越晶紐用。習知 技術為解決上賴題，有人提㈣高強度雷射辆行奈秒（n__d)或千億 分之-秒（f—飛秒）之雷射加工，可以得到優良的溝槽結構。不過， 5 1271252 上述技術均使用紫外線雷射或飛秒雷射系統，其成本高昂且加工不易，為眾所周 知0 • 過去雖有文獻提及以成本較低之二氧化碳雷射對玻璃表面進行微加工。作文 . 獻亦記載，對BK7玻璃作二氧化碳雷射微加工，會產生破裂。文獻並指出，以 minidrilling技術在硼矽酸鹽玻璃（b〇r〇siHcate)及氧化矽玻璃加工可以得到品質 . 做的溝槽結構，但以二氧化碳雷射加工而能得到無碎裂之溝槽結構，尚無相關 報導。 _ 目此目前實衫要提供—種新穎的f射微加工技術，可以在玻轉材質之基 板上形成無碎裂之溝槽結構。 同時也必須有-種雷射微加工方法，可以在玻璃材質基板上進行微加工，製 成具有所需圖型之溝槽結構。 【發明内容】 本發明之目的即在提供一種新穎的雷射微加工方法，以在玻璃等材質之基板 上形成溝槽結構，而不致造絲板碎裂。 % #目的也在提供一種雷射微加工方法，可以在玻璃材質基板上進行 微加工，製成具有所需結構的溝槽。 之目的也在提供利用上述方法對玻璃等材質基板微加工之裝置。 依據本翻之雷射無餐微加4法，魏純備—賴μ魏板；將該 基板置於一工作平a夕*批上 "加熱板上’對該基板預熱至所定溫度；以二氧化碳雷射在 2基板上械所需及重複__之組成分進行刻晝，直鑛得所需之高 見比、結構及圖型為止等步驟。其中，二氧化碳雷射可以掃描方式或以刻畫方式 形成該圖型。此外，對今 圖型之組成分進行重複刻畫時，可對同一位置施以雷射 6 1271252 光束或對已細雷射光束之位置附近位置施以雷射光束。本發明並揭示一種可 以對玻璃基板進行上述微加工之t置。適用在本發明之基板，可以包括各種玻璃 及石英材料，特別是Borofl〇at®玻璃及pyrex⑧玻璃。 【實施方式】 上述本兔明之目的及優點，可由以下詳細說明並參照圖式而更形清楚。以下 依據圖式卿本發明之雷射鱗裂微加工裝置及其微加工方法。 第Θ表示本舍明雷射無碎裂微力口工裝置一施實例之結構示意圖。圖中顯 示，本發明之雷射無碎裂微加工裝置主要包括一雷射光源⑴及一工作平台⑵。 其中，該雷射光源⑴可以選用任何玻璃可吸收之波長，在8微米至2〇微米 之間’常用易取得的雷射波長為则微米，但不限於單_波段雷射。而在本發 明之實例巾，係建議使用二氧化碳雷射，其主要理由包括二氧化碳雷射光源成本 較低，取得容易，且所發出之光束能量較低，不轉致基板因應力集中或應 力累積而碎裂。該工作平台⑵可為任何可在水平面進行單軸、雙軸、經向或 多軸移動之平台。-般而言，商業上可見之數值控制母機，即為—種適用之工作 平台。 缸作平台⑵上置加熱板⑴，利用電氣或其他方式加熱後，可達到並維 持所需之溫度。加熱板⑴上以適用之方式設置定位治具（未圖示），用以固定 基板⑷。在進行微加工時，基板⑷可由加熱板⑴預熱至所需溫度，並持 續加熱或降溫。基板⑷也可紅作平台⑵之移動，而移動其位置或方向、 經度。 雷射光源⑴所發出之光束經反射鏡⑸反射後，達到半透鏡⑹，其中 部份光束穿透半透鏡（6)送到γ軸感測器⑼，其餘光束反射後，達到半透鏡 7 1271252 (7)，其中一部份光束透過而達到χ軸感測器〇〇)，其餘光束則在此反射，進 入聚焦鏡（8)，經集中後達到基板（4)，進行微加工。由γ軸感測器（9)及义 t 軸感測器（10)所偵測之雷射光束，可以產生控制用參數，用以控制雷射功率。 適用在本發明之基板（4)，材質包括石英、玻璃或類似材質。如為玻璃，可 為Borofloat或Pyrex或其他適於製作微流體晶片基板之玻璃。 . 以下以實施例說明本發明雷射無碎裂微加工方法。需說明者為以下之實例只 在例示本發明，不得用以限制本發明之範圍。 實施例1-3 C〇2雷射疋以市售之雷射光源（，Universai Laser办伽⑽）改裝而成。 其聚焦鏡片之焦距由38mm改為25mm，以縮小最小光束尺寸。基板加熱至 150-300°C。雷射最高強度為25W。雷射光束位移速度定為〇 6_/se(^6〇〇 mm/sec。基板上入射光束之直技係以調整基板與聚焦鏡片之距離，進行調整。微 加工之圖型疋由一般市售之繪圖軟體，例如CorelDraw或AutoCAD所產生。光 束掃描範圍定為308mmx610mm。 ^ 貫^例1之基板材質為石英，供應商為General Electric Company ( GE214 ), 炼點1，683 C，退火溫度為1，215°C，厚度為lmm。實施例2之基板為B〇r〇float， 由Schott公司供應，厚度為〇.7mm，其組成為81%&〇2 , 13%b2〇3，4%ν^〇， 2/〇Α12〇3。貫；例3之基板為pyrex，由c〇ming公司供應，厚度為〇 5誦，其組 成為 80% SA ’ 13·0%Β2Ο3，4.0%Na2O，2·3%Α1203 及 0.1% 微量雜質。兩種玻 璃的退火溫度均為560°C。 將該二種基板以上述方法進行微加工，刻畫出微溝槽。以電子顯微鏡觀察其 8 1271252 斷面，並以原子力顯微鏡觀察其表面結構。第2圖（a) - (d)即顯示實施例w 所製成之基板斷面圖。其中（a)表石英基板（實施例丨）之斷面照片為其 溝槽兩側突起部位照片。（e)為此^驗玻璃基板之斷面照片，⑷為p㈣玻 璃斷面照片。 如第2圖之照片所示，石英基板經過微加工後，表面平滑，無瑕疵。但其微 溝槽產生少量變形，而在兩側形成隆起。如經過重複刻纟，其隆起高度會持續增 加，在隆起處可觀察到微小顆粒（第2圖⑻），其粒徑約為丨㈣。而在第2圖 (O、（c〇中則顯示並無隆起產生。與此相比，如在室溫下對^沉〇；[1〇站及1>^以 玻璃進行相同微加工，則會產生碎裂。雖不欲為任何理論拘束，但在常溫下產生 碎裂之原因，推測可能是因為在光熱刻蝕過程中產生之熱應力。如將微加工溫度 定為基板材質之退火溫度大約200-300度以下，甚至350°C以下，則可消除熱應 力所產生之碎裂。據此，如Borofloat玻璃之退火溫度為560。(：，則將Borofloat 玻璃預熱至150-300X：，較好為200-30(TC，可以避免發生碎裂。 除石英之外，事實上在Borofloat玻璃及Pyrex玻璃之基板上也可發現隆起。 此種隆起現象可能產生自步進馬達驅動工作平台之過程所引起。如果所形成的圖 型不是直線而是弧線或轉彎，其隆起現象將更為明顯。而雷射光最初施予之位 置，其隆起現象也較為明顯。因此，如果妥善控制掃描或刻畫速率，將可減緩隆 起的發生。 雖然由本發明所製得之基板’在微溝槽兩側有少量隆起，但於製作微通道 時’通常是將兩基板對合後，封閉該溝槽，而形成微通道。因此，如果隆起的高 度在兩基板接合之容許範圍（通常為約4.5/zm)内，仍能製得合用的微通道。第 9 1271252 3圖（a)顯不刻畫次數與兩側隆起高度之關係圖。圖中，⑷顯示石英基板與 Borofloat玻璃基板之雷射光施加次數與隆起高度之關係圖。圖中顯示B〇r〇fl〇at 玻璃基板對刻畫次數較無敏感度。第3圖（b)顯示雷射光束線性強度〇inearenergy density)(指雷射光束能量與掃描速度之比值）與隆起高度之關係圖。如圖所示， 如將雷射光的線性強度㈣在適當賴，難引起雜起高度可㈣在2·5_ 以下。第3圖（e)為雷射光束線性強度與刻晝溝槽寬度之關係圖。（溝槽寬度定 A為在玻璃水平面下’溝槽之寬度，不包含兩側突起部份）圖中顯示，將雷射光 鲁束之線性強度控制在適當範圍時，仍可獲得寬至8〇 # m之溝槽。提高雷射光束線 性強度之結果，雖可加大溝槽之寬度，但也使隆起加高。 第4圖顯示雷射光束線性強度與刻畫溝槽結構關細。其中⑷顯示線性 強度與溝槽深度關係圖，⑻則顯示其與溝槽深寬比（aspectrati〇)之關係圖。 雷射光束之強度分布為高斯分布，所得之溝槽斷面也形成近似高斯曲線之形狀。 但在溝槽深度大於150#m後，其斷面不再形成高斯曲線，而產生偏差。圖中顯 示（第4圖⑻），對基板表面施以一次雷射刻晝，可以得到深寬比為〇·83之溝 • 槽。 實施例4 以實施例1-3之設備，對實施例2之基板進行雷射刻畫。刻畫方式為對一同 溝槽位置進行多次刻晝。刻晝時雷射光束係以與基板表面形成直角之角度入射。 其結果如第5圖所示。第5圖表示以雷射光束對同_溝槽進行多次刻畫所得基板 斷面圖。其中（a)表刻晝1次之結果，（b)表刻晝2次之結果，（c)表刻畫4 次之結果’而（d)則表刻畫8次之結果，每次刻晝之時間間距為丨秒。 !271252 圖中顯示，對同~溝槽刻畫4次後，可以獲得之溝槽深寬比為1.52。但對同 聋槽進行8人刻4後，其溝槽形狀將產生偏差，而不再是接近高斯曲線。 實施例5 以實施例1·3相同之設備，對實施例2之基板進行刻畫。刻畫時，首先 在無溝槽之基板上刻晝_道溝槽，再將雷射光束稍稍位移（距離小於所形成溝槽 寬度）/σ溝乜長度方向以相同條件刻晝一道。其結果如第6圖所示。第6圖 域同賴不同位置進行平行刻畫所得之溝槽斷面示意圖。如圖所示，兩溝槽 # 之寬度分別為14〇_及200,，兩者距離為1卿m。所形成的溝槽形狀為2 溝槽之併合。此種形狀之濕式侧並無法形成。而如以反應離子働1 (reactive ion etching ’ RIE) ’則需多數步驟才能達成。此種溝槽結構特別適用在例如微流體加 熱/降溫反應裝置上。 實施例6 以實施例1-3之設備，對實施例2之基板進行刻晝。刻畫時係以棋盤式刻畫， 形成直父之格線，格線之交點可形成微_ (mieiOweUs)，而成為微畴列。第7 圖即顯示本實施例之棋盤狀溝槽之SEM照片。圖中顯示，袼線之間距為3〇〇"m， 各歸之直徑為6G_，减為5G/zm。其中，深度指由各袼線溝槽底部向下量 測之結果，此種結構極適合作為細胞培養、保存，以供進一步生化實驗之用途。 由於本發明所提供之微加工方法實為簡便，此種結構可在2分鐘以内完成（面積 為2〇}(2〇1111112)，但在習知之八1*+乾式蝕刻與反應離子蝕刻，只能以1〇加^爪^ 之速度進行。且要刻晝出50#m深之微阱，需時更久。 實施例7 11 1271252 以實施例1-3之設備，對一 Borofloat玻璃表面進行刻畫。刻畫所得之圖形， 如第8圖所示。第請顯示本發明雷射無碎裂微加工方法適用在刻畫複雜圖形之 • 微溝槽基板表面照片。如圖所示，圖形中包括蜿蜒及螺形圖型。溝槽之寬度與深 度分別為90_與5〇，（各刻畫一次）。其中，所形成之流道可用來注入及取 出反應物及產物。絲板可㈣受高溫及化學則。在對絲板進行接合時，不 碰賴外/㈣Π物’例如無晶形卿mGiphGUS siH_)，以作陽極接合。所得之微 通道晶片極適合作為生化反應應用，並可耐受不良的反應條件。最重要的是，所 • 冑成的溝槽結構無碎裂產生，且可在2分鐘内完成（面積2〇X 65贿2)。均為習 知技術所不能及。 以上是對本發明雷射無碎裂微加工之說明。習於斯藝之人士，應可由以上說 月得知本發明之精神，並據以作出各種變化與衍生。唯只要不脫離本發明之精 神，均應包含於其申請發明專利範圍之内。 【圖式簡單說明】 第1圖表示本發明雷射無碎裂微加工裝置一施實例之結構示意圖。 • 第2圖- (d)即顯示實施例1-3所製成之基板斷面圖。 第3圖顯示刻畫深度與兩側隆起高度之關係圖。 第4圖顯示雷射光束線性強度與刻畫溝槽結構關係圖。 第5圖表示以雷射光束對同一溝槽進行多次刻畫所得基板斷面圖。 第6圖為對同-溝槽不同位置進行平行刻畫所得之溝槽斷面示意圖。 第7圖即顯示本實施例之棋盤狀溝槽之SEM照片。 第8圖顯不本發明雷射無碎裂微加工方法適用在刻晝複雜圖形之微溝槽基板 表面照片。 12 1271252 【主要元件符號說明】 1 雷射光源 2 工作平台 3 加熱板 4 基板 5 反射鏡 6 半透鏡 7 半透鏡 8 聚焦鏡 9 Y-stage感測器 10 X-stage感測器1271252 IX. Description of the invention: [Technical field of the invention] The invention relates to a laser-free fragmentation micro-machining method, and relates to a method and a device for micro-machining by laser etching on materials such as glass and quartz. . [Prior Art] Microfluidic wafers are currently a commonly used tool in various biochemical reactions or nanoparticle fabrication. The preparation of the u-body [time] requires time, ^, 、, and special materials to prepare the substrate of the microfluidic channel. Using microfluidic wafers for various experiments, fabrications, or inspections can reduce sample and lake usage and ease control of the process. Become a technology that is very needed in the industry. Due to its excellent chemical and thermal stability, glass is a commonly used base material for the preparation of microfluidic wafers. During the biochemical reaction, the glass does not exhibit adsorption to proteins or other chemicals. It is more suitable for making microfluidic wafers than other materials suitable as substrates, such as Shixi and Nitrogen (_4). When fabricating a microfluidic wafer, it is desirable to form a microfluidic channel on the wafer substrate. The most common microchannel preparation method is the domain side. However, when performing the wet side, f performs multiple mask and lithography processes in accordance with the structure and characteristics of the desired channel. Not only is the procedure complicated, the time is long and the cost is increased. Micro-channel processing by laser lithography can overcome the problem of the upper dynasty, and can shorten the preparation _, and can be configured by lithography technology. However, the laser engraving on the glass substrate encountered two problems. _ is when the energy density of the laser beam often causes the glass substrate to break. On the other hand, if the intensity of the laser beam is insufficient, the groove_degree and aspect ratio (aspeetmti.) formed will be used for the micro-crossing. In order to solve the problem, it is suggested that (4) high-intensity lasers with nanoseconds (n__d) or hundreds of billions-seconds (f-femtoseconds) can achieve excellent trench structure. However, 5 1271252 all of the above techniques use ultraviolet laser or femtosecond laser systems, which are costly and difficult to process, and are well known. • In the past, there have been references to the micromachining of glass surfaces with lower cost carbon dioxide lasers. Composition. It is also stated that the BK7 glass is subjected to carbon dioxide laser micromachining, which will cause cracking. The literature also pointed out that the quality of the borax silicate glass (b〇r〇siHcate) and yttrium oxide glass can be obtained by minidrilling technology. The groove structure is made, but the carbon dioxide laser processing can obtain the crack-free groove. Structure, there is no relevant report. _ This is the current real shirt to provide a new type of f-micro-machining technology, which can form a crack-free groove structure on the glass substrate. At the same time, there must be a laser micromachining method, which can be micromachined on a glass substrate to form a trench structure having a desired pattern. SUMMARY OF THE INVENTION It is an object of the present invention to provide a novel laser micromachining method for forming a trench structure on a substrate of a material such as glass without causing chipping of the wire. The purpose of % # is also to provide a laser micromachining method which can be micromachined on a glass substrate to form a trench having a desired structure. It is also an object of providing a device for micromachining a substrate such as glass by the above method. According to the laser, there is no meal micro-addition 4 method, Wei Chunbei- Lai Wei Wei board; the substrate is placed on a working flat, a batch of hot plates, and the substrate is preheated to a predetermined temperature; The laser is required to be machined on the 2 substrate and the components of the __ are repeated for engraving. The straight ore is required to have the required high aspect ratio, structure and pattern. Among them, the carbon dioxide laser can form the pattern in a scanning manner or in a characterization manner. In addition, when repeating the composition of the current pattern, a laser beam of 1 1271252 or a laser beam may be applied to a position near the position of the fine laser beam. The present invention also discloses a t-setting in which the above-described micromachining can be performed on a glass substrate. Suitable substrates for use in the present invention may include various glass and quartz materials, particularly Borofl〇at® glass and pyrex8 glass. [Embodiment] The above objects and advantages of the present invention will be more apparent from the following detailed description and drawings. The following is a laser-splitting micro-machining device and a micro-machining method thereof according to the present invention. Dijon shows the structural schematic of an example of the Benchering laser non-fragmented micro force porting device. The figure shows that the laser chipless micromachining device of the present invention mainly comprises a laser light source (1) and a working platform (2). Among them, the laser light source (1) can use any glass absorbable wavelength, between 8 micrometers and 2 micrometers. The commonly used laser wavelength is micrometer, but not limited to single-band laser. In the example towel of the present invention, a carbon dioxide laser is recommended, and the main reason is that the carbon dioxide laser light source is low in cost, easy to obtain, and the emitted beam energy is low, and the substrate is not transferred due to stress concentration or stress accumulation. Fragmentation. The work platform (2) can be any platform that can be uniaxial, biaxial, warp or multi-axis moving in the horizontal plane. In general, the numerically controlled master machine that is commercially visible is the applicable work platform. The cylinder plate (2) is provided with a heating plate (1), which can be heated and maintained by electric or other means to maintain and maintain the required temperature. A positioning jig (not shown) is provided on the heating plate (1) to fix the substrate (4). During micromachining, the substrate (4) can be preheated to the desired temperature by the heating plate (1) and continuously heated or cooled. The substrate (4) can also be moved by the red platform (2) to move its position or direction and longitude. The beam emitted by the laser source (1) is reflected by the mirror (5) and reaches the half lens (6). A part of the beam passes through the half lens (6) and is sent to the γ-axis sensor (9). After the other beams are reflected, the half lens 7 1271252 is reached. (7), a part of the beam passes through to reach the x-axis sensor 〇〇), and the remaining beams are reflected here, enter the focusing mirror (8), and after concentration, reach the substrate (4) for micromachining. The laser beam detected by the gamma-axis sensor (9) and the sensed-axis sensor (10) can generate control parameters for controlling the laser power. Applicable to the substrate (4) of the present invention, the material comprises quartz, glass or the like. In the case of glass, it may be Borofloat or Pyrex or other glass suitable for making microfluidic wafer substrates. The laser non-fragmentation micromachining method of the present invention will be described below by way of examples. The following examples are intended to illustrate the invention and are not intended to limit the scope of the invention. Example 1-3 A C〇2 laser was retrofitted with a commercially available laser source (Universai Laser (10)). The focal length of the focusing lens is changed from 38mm to 25mm to reduce the minimum beam size. The substrate is heated to 150-300 °C. The laser has a maximum intensity of 25W. The displacement speed of the laser beam is set to 〇6_/se (^6〇〇mm/sec. The direct beam of the incident beam on the substrate is adjusted by adjusting the distance between the substrate and the focusing lens. The pattern of micromachining is generally available from the market. The drawing software, such as CorelDraw or AutoCAD, has a beam scanning range of 308mm x 610mm. ^ The substrate of Example 1 is made of quartz, supplied by General Electric Company (GE214), with a melting point of 1,683 C and an annealing temperature of 1. 215 ° C, thickness lmm. The substrate of Example 2 is B〇r〇float, supplied by Schott, the thickness is 7.7mm, the composition is 81% & 〇2, 13% b2 〇 3, 4% ν^〇, 2/〇Α12〇3. The substrate of Example 3 is pyrex, supplied by c〇ming, with a thickness of 〇5诵, and its composition is 80% SA ' 13·0%Β2Ο3, 4.0% Na2O, 2·3%Α1203 and 0.1% trace impurities. The annealing temperature of both glasses is 560 ° C. The two substrates are micromachined by the above method to describe the micro-grooves. The 8 1271252 section is observed by electron microscope. And observe the surface structure by atomic force microscope. Figure 2 (a) - (d) shows the preparation of example w A cross-sectional view of the plate, wherein (a) a cross-sectional photograph of the quartz substrate (Example 丨) is a photograph of the protrusion on both sides of the groove. (e) a cross-sectional photograph of the glass substrate, (4) a p (four) glass break Photograph. As shown in the photo in Figure 2, the quartz substrate has a smooth surface and flawless surface after micromachining, but the micro-grooves produce a small amount of deformation and form ridges on both sides. It will continue to increase, and fine particles (Fig. 2 (8)) can be observed at the bulge, and the particle size is about 丨 (4). In Fig. 2 (O, (c〇 shows no bulge). For example, at room temperature, [1〇 station and 1>^ with the same micromachining of glass will cause chipping. Although it is not intended to be bound by any theory, it causes cracking at normal temperature. It is speculated that it may be due to thermal stress generated during photothermal etching. If the micromachining temperature is set to an annealing temperature of the substrate material of about 200-300 degrees or less, or even 350 ° C or less, the chip generated by thermal stress can be eliminated. According to this, the annealing temperature of Borofloat glass is 560. (:, Preheat the Borofloat glass to 150-300X: preferably 200-30 (TC) to avoid chipping. In addition to quartz, bumps can also be found on the Borofloat glass and Pyrex glass substrates. The phenomenon may be caused by the process of driving the working platform from the stepping motor. If the pattern formed is not a straight line but an arc or a turn, the bulging phenomenon will be more obvious. The position of the laser light initially applied is also obvious. Therefore, if the scanning or characterization rate is properly controlled, the occurrence of bulges will be slowed down. Although the substrate 'made by the present invention has a small amount of ridges on both sides of the micro-grooves, when the micro-channels are formed, the two substrates are usually joined together, and the grooves are closed to form microchannels. Therefore, if the height of the ridge is within the allowable range of bonding of the two substrates (usually about 4.5/zm), a combined microchannel can still be produced. No. 9 1271252 3 (a) shows the relationship between the number of times of depiction and the height of the ridges on both sides. In the figure, (4) shows a relationship between the number of times of application of the laser light and the height of the ridges of the quartz substrate and the Borofloat glass substrate. The figure shows that the B〇r〇fl〇at glass substrate is less sensitive to the number of characterizations. Figure 3 (b) shows the relationship between the linear intensity of the laser beam 〇inearenergy density (the ratio of the laser beam energy to the scanning speed) and the height of the ridge. As shown in the figure, if the linear intensity (4) of the laser light is appropriate, it is difficult to cause the height of the hybrid to be (4) below 2. 5_. Figure 3 (e) is a plot of the linear intensity of the laser beam versus the width of the engraved trench. (The width of the groove is set to be the width of the groove below the horizontal plane of the glass, and does not include the protrusions on both sides.) The figure shows that when the linear intensity of the laser beam is controlled to an appropriate range, it can still be as wide as 8〇. #m的槽. As a result of increasing the linearity of the laser beam, although the width of the groove can be increased, the ridge is also raised. Figure 4 shows the linear intensity of the laser beam and the structure of the groove. (4) shows the relationship between the linear intensity and the groove depth, and (8) shows the relationship between the groove and the aspect ratio (aspectrati). The intensity distribution of the laser beam is Gaussian, and the resulting groove section also forms the shape of an approximate Gaussian curve. However, after the groove depth is greater than 150#m, the section no longer forms a Gaussian curve, and a deviation occurs. As shown in the figure (Fig. 4 (8)), a laser engraving is applied to the surface of the substrate to obtain a groove/slot with an aspect ratio of 〇·83. Example 4 The substrate of Example 2 was subjected to laser characterization using the apparatus of Examples 1-3. The way of characterization is to sculpt the position of the groove together. The laser beam is incident at an angle that forms a right angle to the surface of the substrate. The result is shown in Fig. 5. Fig. 5 is a cross-sectional view showing the substrate obtained by multi-characterizing the same groove with a laser beam. Among them, (a) the result of the engraving of the first time, (b) the result of the engraving of the second time, (c) the result of the four engravings of the table, and (d) the result of the engraving of the eight times, each engraving The time interval is leap seconds. !271252 The figure shows that after 4 times of the same groove, the groove aspect ratio can be obtained as 1.52. However, after 8 engravings for the same groove, the groove shape will be biased instead of being close to the Gaussian curve. Example 5 The substrate of Example 2 was characterized by the same apparatus as in Example 1-3. When characterization, first engrave the _-channel on the grooveless substrate, and then slightly shift the laser beam (the distance is smaller than the width of the formed groove) / σ groove length in the same condition. The result is shown in Fig. 6. Figure 6 is a cross-sectional view of the trench obtained by parallel characterization of different locations. As shown in the figure, the widths of the two grooves # are 14 〇 _ and 200, respectively, and the distance between the two is 1 qing m. The groove shape formed is a combination of 2 grooves. The wet side of this shape cannot be formed. However, in the case of reactive ion etching (RIE), most steps are required. Such a trench structure is particularly useful, for example, in microfluidic heating/cooling reaction devices. Example 6 The substrate of Example 2 was engraved with the apparatus of Examples 1-3. When depicting, it is characterized by a checkerboard pattern, forming a straight line of straight fathers. The intersection of the grid lines can form micro_(mieiOweUs) and become a microdomain column. Fig. 7 is a SEM photograph showing the checkerboard groove of this embodiment. The figure shows that the distance between the turns is 3〇〇"m, and each has a diameter of 6G_, which is reduced to 5G/zm. Among them, the depth refers to the result measured downward from the bottom of each rifling groove. This structure is very suitable for cell culture and preservation for further biochemical experiments. Since the micromachining method provided by the present invention is simple, the structure can be completed within 2 minutes (area 2 〇} (2〇1111112), but in the conventional 8*+ dry etching and reactive ion etching, only It can be carried out at a speed of 1 〇 plus ^^, and it takes longer to take out the 50#m deep micro-trap. Example 7 11 1271252 With the apparatus of Examples 1-3, a Borofloat glass surface is subjected to Characterize the resulting image, as shown in Figure 8. Please show that the laser-free fragmentation micromachining method of the present invention is suitable for depicting the surface of a micro-trench substrate on a complex pattern. As shown in the figure, the image includes 蜿蜒 and spiral pattern. The width and depth of the groove are 90_ and 5〇, respectively (each time is drawn), wherein the formed flow channel can be used to inject and take out the reactants and products. The wire plate can be (4) subjected to high temperature. And chemistry. When joining the silk plate, do not touch the outer / (four) sputum 'such as crystal clear gGiphGUS siH_) for anodic bonding. The resulting microchannel wafers are well suited for biochemical reaction applications and can withstand poor reaction conditions. Most importantly, the resulting grooved structure is free of debris and can be completed in 2 minutes (area 2〇X 65 bribe 2). It is beyond the reach of conventional technology. The above is a description of the laser-free fragmentation micromachining of the present invention. Those who are acquainted with the artist may know the spirit of the invention from the above-mentioned month and make various changes and derivatives. Only the spirit of the invention should be included in the scope of the invention patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the structure of an embodiment of the laser non-fragmentation micromachining apparatus of the present invention. • Fig. 2 - (d) shows a cross-sectional view of the substrate produced in Example 1-3. Figure 3 shows the relationship between the depth of the depiction and the height of the ridges on both sides. Figure 4 shows the relationship between the linear intensity of the laser beam and the characterization of the trench structure. Fig. 5 is a cross-sectional view showing the substrate obtained by performing a plurality of times on the same trench by a laser beam. Figure 6 is a schematic cross-sectional view of the trench obtained by parallel characterization of different locations of the same-trench. Fig. 7 is a SEM photograph showing the checkerboard groove of this embodiment. Fig. 8 shows that the laser non-fragmented micromachining method of the present invention is suitable for photographing the surface of a microgrooved substrate engraved with a complicated pattern. 12 1271252 [Description of main component symbols] 1 Laser source 2 Working platform 3 Heating plate 4 Substrate 5 Mirror 6 Half lens 7 Half lens 8 Focusing mirror 9 Y-stage sensor 10 X-stage sensor
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