1270637 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種溫控設備，特別是指一種冷/暖氣 裝置。 【先前技術】 叉到溫室效應的影響，全球各地的溫度變化越來越大 且义化莫測，因此，4人所周知的一北極是全球最冷的地 方，現已改寫歷史，轉變成一南極才是現今最冷的地方， 所以，冷/熱莫測的時代來臨，人們不能只聽天由命地任由 擺佈，積極的想法是，更應該尋求抵抗/解決的方法。 养冷天氣」可以使用暖氣來軟化寒風，「酷熱天氣」 可以，用冷氣來隔絕熱氣，但是，就現有的暖氣機或冷氣 機而言，雖然可產生冷/暖風，唯一的缺憾是，要達到大功 率的冷/暖氣時’勢必要大幅提高供應的電源，以及相對容 置機件的機體也要跟著變大，因此，普遍的現象是，需要 ^力率的冷/暖氣時，冷/暖氣機的體積亦相對倍增，如此一 去不^較佔使用空間’而且成本亦相對倍增’這對於消 、而3，不但是一大負擔，而且，也相當耗材 也衍生環保問題。所以，亟待再尋求解決之道。 =外，—般的致冷晶片1電源_ I]取 =)的耐塵耐流容量為例’只能產生 A( 因此，若要達到功率1200w(瓦特）的需 力丰 20顆致冷晶片，如此一來 以須使用 體的空間。 成本^，且相對佔用機 5 1270637 【發明内容】 因此，本發明之目的，即在提供一種無需增加體積， 又可獲得高功率高效能的冷/暖氣裝置。 於是，本發明冷/暖氣裝置包含一殼體、一電源單元、 一蓄溫單元、一能源交換單元、一泵浦、一高功率熱電半 導體、一引導單元、一擾動單元，及一溫控器。 該機殼具有一殼本體、一安置在該殼本體内部並區隔 出一第一容室及一第二容室的隔板、一形成於該殼本體上 ϋ 且與該第一容室相連通的第一開口，以及相互間隔地形成 於該殼本體上且與該第二容室相連通的一第二開口及一第 三開口。 該電源單元裝設在該機殼内部，為高壓低電流之電路 ，並供應整個系統所需之電力來源。 該蓄溫單元嵌設在該機殼之隔板上，並且置於該第一 容室内，該蓄溫單元内部蓄存有適量不凝結的液體。 該能源交換單元安置在該機殼之第一容室内部，並與 該畜溫早元相連接。 該泵浦與該電源單元電連接，並且串接在該能源交換 單元之一管路上，提供輸送液體。 該面功率熱電半導體嵌設在該殼體的隔板上’並與該 第二容室相連通。 該擾動單元裝設在該機殼之壁面上，並具有一與該第 一容室相連通的第一風扇，及一與該第二容室相連通的第 二風扇，該第二風扇的位置是正對該高功率熱電半導體。 1270637 本發明的功效，藉用高Λ .玄 用呵功率致冷晶元產生高功率、高 效能的冷/暖氣，而且，冷/瞎今擁-_ ~/暖軋機機體可維持在一般尺 所以可有效降低使用成本。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合爹考圖式之_個較佳實施例的詳細說明中，將可 清楚的呈現。1270637 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a temperature control device, and more particularly to a cold/heating device. [Prior Art] With the effect of the greenhouse effect, the temperature changes around the world are getting bigger and more unpredictable. Therefore, the four Arctic, which is well known to all, is the coldest place in the world. It has been rewritten into history and transformed into an Antarctic. It is the coldest place today, so the cold/unpredictable era is coming, people can't just rely on the commandment of life, the positive idea is that they should seek resistance/solution. In cold weather, you can use heating to soften the cold wind. "Cool weather" can use cold air to insulate the hot air. However, in the case of existing heaters or air conditioners, although the cold/warm air can be generated, the only drawback is that When it comes to high-powered cold/heating, it is necessary to greatly increase the supply of power, and the body that is relatively accommodating the parts must also become larger. Therefore, the general phenomenon is that when cold/heating is required, cold/heating/ The volume of the heating machine is also relatively doubled, so that it does not occupy the space of use and the cost is relatively doubled. This is not only a big burden, but also a considerable amount of consumables. Therefore, it is urgent to seek a solution. = Outside, the general cooling chip 1 power supply _ I] take =) the dust and current resistance capacity as an example 'only A can be generated (thus, to reach the power of 1200w (watts) of the need for 20 pieces of cryogenic wafers, Therefore, it is necessary to use the space of the body. Cost ^, and relatively occupying machine 5 1270637 [Invention] Therefore, it is an object of the present invention to provide a cold/heating device capable of obtaining high power and high efficiency without increasing the volume. Thus, the cold/heating device of the present invention comprises a casing, a power supply unit, a temperature storage unit, an energy exchange unit, a pump, a high power thermoelectric semiconductor, a guiding unit, a disturbance unit, and a temperature control The casing has a shell body, a partition disposed inside the shell body and partitioning a first chamber and a second chamber, a shell formed on the shell body and the first volume a first opening communicating with the chamber, and a second opening and a third opening formed on the housing body and communicating with the second chamber. The power unit is mounted inside the casing High-voltage, low-current circuit, and supply A power source required for the system. The temperature storage unit is embedded in the partition of the casing and placed in the first chamber, and the temperature storage unit stores an appropriate amount of non-condensable liquid inside. It is disposed inside the first chamber of the casing and connected to the temperature of the animal. The pump is electrically connected to the power unit and is connected in series to one of the energy exchange units to provide a liquid to be transported. The surface power thermoelectric semiconductor is embedded on the partition of the casing and communicates with the second chamber. The disturbance unit is mounted on the wall of the casing and has a communication with the first chamber. a first fan, and a second fan connected to the second chamber, wherein the position of the second fan is directly opposite to the high-power thermoelectric semiconductor. 1270637 The effect of the invention is borrowed from the sorghum. The wafers produce high-power, high-efficiency cold/heating, and the cold/roller--~/ warm-rolling machine body can be maintained at a general level, so that the cost of use can be effectively reduced. [Embodiment] The foregoing and other aspects of the present invention Technical content, features and merits , _ In the following detailed description of a preferred embodiment of the drawings father test, a clearly presented.
參閱圖i，本發明冷/暖氣裝置之較佳實施例包含一殁 體卜-電源單元2、一蓄溫單元3、一能源交換單元4、 -泵浦5、-高功率熱電半導體6、一引導單元7、一擾動 早元8 ’及· 溫控器9。 該機殼1具有—殼本體11、—安置在該殼本體11内部 並區隔出一第一容室12及-第二容室13的隔板14、一形 於該殼本體11上且與該第一容室12相連通的第一開口 μ ，以及相互間隔地形成於該殼本體u上且與該第二容室Η 相連通的一第二開口 16及一第三開口 17。該第一、二、三 開口 15、16、17各嵌設有一具有多數孔網目的濾網18。 參閱圖1與圖2，該電源單元2裝設在該機殼】的第一 谷至12内部，為為高壓低電流之電路，並供應整個系統所 需之電力來源。 该蓄溫單元3嵌設在該機殼1之隔板14上，並且置於 该第一容室12内，該蓄溫單元3内部蓄存有適量不凝結的 液體（本實施例是該液體為純水）。 該能源交換單元4安置在該機殼1之第一容室12内部 1270637 ，並藉由一管路41與該蓄溫單元3相連接。 細：5與該電源單元2電連接，並且串接在該能源 父換早兀4之官路41上，提供輸送液體。 、，該：功率熱電半導體6喪設在該殼體】的隔板u上， X 一亥第—奋至13相連通。該高功率熱電半導體6 一 貼附於該蓄溫單元3上的第一側面61，及—與該第:側面 01反向設置的第二側面62。該高 生高功率能源的特多^ , …、电h體6具有產 ^㈣色’其細部結構特徵係另案提申 不予賢述。 该引導單元7安置在該殼體丨的第二 附在該高功率熱電半導體6的第二側面62上在：：並貼 中，該引導單元是一梳型的散熱器。 纟本貫施例 «動單元8裝設在該機殼 該第-容室12相連通的第…面上’亚包括-與 邳連通的弟一風扇81，及一盥 13相連通的第二風扇82,該第二風扇82的：°亥一至 :功率熱電半導體6、該引導單元7，並且正對該 開口 16、17之間。 第一 一 "該溫控器9是貼附於該蓄溫單元 並且與該電源單元2電連接，主要作用 土面31上’ 的液體溫度。 要作用疋控制該蓄溫單元3 此外，當作冷氣使用時，高 —側面〇是咸廂^ 乂同功车熱電半導體6的第 側面62是產溫單元3内部的冷溫度，而，該第二 作暖氣二:並藉由該引導單元7散熱;反之，當 …力率熱電半導體6的第-側面61是感 8 U70637 應该畜溫早元3内立β沾古、拉Referring to FIG. 1, a preferred embodiment of the cold/heating device of the present invention comprises a body-power unit 2, a temperature storage unit 3, an energy exchange unit 4, a pump 5, a high-power thermoelectric semiconductor 6, and a The guiding unit 7, a disturbing early element 8' and the thermostat 9. The casing 1 has a shell body 11 , a partition 14 disposed inside the shell body 11 and partitioning a first chamber 12 and a second chamber 13 , and is formed on the shell body 11 and The first opening μ of the first chamber 12 communicates with the second opening 16 and the third opening 17 which are formed on the shell body u and are in communication with the second chamber Η. The first, second and third openings 15, 16, 17 are each embedded with a screen 18 having a plurality of mesh openings. Referring to Figures 1 and 2, the power supply unit 2 is mounted inside the first valley to the inside of the casing, and is a circuit for high voltage and low current, and supplies the power source required for the entire system. The temperature storage unit 3 is embedded in the partition 14 of the casing 1 and placed in the first chamber 12, and the liquid storage unit 3 stores a proper amount of non-condensed liquid (this embodiment is the liquid). For pure water). The energy exchange unit 4 is disposed inside the first chamber 12 of the casing 1 1270637 and is connected to the temperature storage unit 3 by a pipeline 41. Fine: 5 is electrically connected to the power unit 2, and is connected in series to the official road 41 of the energy source to provide a transport liquid. Then, the power thermoelectric semiconductor 6 is disposed on the partition u of the casing, and the X-Hai-Fen-to-13 phase is connected. The high-powered thermoelectric semiconductor 6 is attached to the first side surface 61 of the temperature storage unit 3, and the second side surface 62 disposed opposite to the first side surface 01. The high-energy and high-power energy of the special ^, ..., electric h body 6 has the production of (four) color 'the detailed structural characteristics of the case is not recommended. The guiding unit 7 is disposed on the second side 62 of the housing 附 attached to the second side 62 of the high-power thermoelectric semiconductor 6 and is a comb-type heat sink.纟 施 « « « « « « « « « « « « « « « « « 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动 动The fan 82, the second fan 82 is: between the power thermoelectric semiconductor 6, the guiding unit 7, and is between the openings 16, 17. The first "the thermostat 9 is a liquid temperature attached to the temperature storage unit and electrically connected to the power supply unit 2, mainly acting on the soil surface 31. In order to control the temperature storage unit 3, in addition, when used as cold air, the high-side side is the salt chamber; the first side 62 of the isoelectric thermoelectric semiconductor 6 is the cold temperature inside the temperature generating unit 3, and the The second heating system 2: and the heat is dissipated by the guiding unit 7; conversely, when the first side 61 of the force rate thermoelectric semiconductor 6 is the feeling 8 U70637, the animal temperature is early 3, the inner side is β, and the old
， β⑷的雨溫，而，該第二側面62是產生A 源，並藉由㈣導單元7疏散。 々 才錄以暖氣裝置為實施說明為例，在供 ，由於該高功率熱電丰導卿& 了方a , 弘狀匕、 ^ L 包丰導體6可產生穩定高功率的埶源， 因此，該蓄溫單元3 / 、 ”、、# 呆持在咼溫狀態，藉由該泵浦 熱的液體在該能源夺施印-a 〕將同 一一 換早兀4的管路41中循環<，如此，萨 由έ亥殼體1的第_厨 精 =扇们將該能源交換單元4所產生於該 φ $日友虱向外抽送，而獲致高功率 零 該第一風扇81之—々k4丄门 午友乱此％ μ吸入該第—容然地外部空氣由該第一開口 熱電半導體6之第—側面效果’·至於’該高功率 弟一側面62的冷源，則藉由 疏散，並藉由嗜筮—门白 日街％W V早兀7 °弟-風扇82自外部吸入氣流，且由該第二 4 16、17將存在於該第二容室^ 此週而復始，就可獲得高功率的暖氣。 如 ，嚷要改變上述之高功率熱電半導體6電源極性 • 々源的第二側面62貼附在該蓄 產生熱源的第—側面61 :…3上，而讓 上述择作^ 咐在°亥引導早疋7’藉此，如同 上仏作4，就可要獲得高功率的冷氣。 歸納上述，相較於現有可古 相對增加使用#太μ 產^功率的冷氣/暖氣， 1之用成本、機具體積之知 妖電半# 、、，本發明藉由高功率 暖氣機機體可维持在/ 文成的冷/暖氣，而且冷/ ，故確實可達n力效與目的。㈣成本也可有效降低 卜相較於現有致冷晶片要能達到12婦（瓦特）的功 1270637 率需求時，必須使用20顆致冷晶片之缺失，本發明該高功 率熱黾半導體6内的每一顆致冷晶片供應電源電壓16〇v(伏 锊）、5A(安培）的耐電壓耐電流，故每一顆致冷晶片可產生 80〇w(瓦特）的功率，因此，兩顆致冷晶片就可達到16⑻界( 瓦特）的功率需求，遠大於現有致冷晶片必須使用20顆才足 夠，如此一來，本發明相對可降低製造成本，以及機體的 使用空間。 ‘以上所述者，僅為本發明之較佳實施例而已, the rain temperature of β(4), and the second side 62 is to generate an A source, and is evacuated by the (four) guiding unit 7. For example, in the case of the heating device, the high-power thermoelectric Fengqing & Fang A, Hongli, and L L Baofeng conductor 6 can produce a stable high-power source, therefore, The temperature storage unit 3 / , ", , # is in a state of enthalpy, and the liquid of the pumping heat is circulated in the line 41 of the same early 兀 4 by the liquid of the pumping heat. ;, in this way, the first fan of the shell 1 of the έ έ = = 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 扇 能源 能源 能源 能源 能源 能源 能源 能源 能源 能源 能源 能源 能源 能源 能源々k4丄门午友乱%% μ inhaling the first—the external air from the first open thermoelectric semiconductor 6’s side-side effect’ Evacuate, and draw airflow from the outside by the embarrassing-door Bairijie%WV as early as 7 °-fan-fan 82, and the second 4 16 and 17 will exist in the second chamber and repeat this week. Obtain high-powered heating. For example, to change the polarity of the above-mentioned high-power thermoelectric semiconductor 6 power supply • The second side 62 of the source is attached The first side 61:...3 of the heat source is generated, and the above-mentioned selection is made at the beginning of the year, so that the high-power cold air can be obtained. Compared with the existing Kegu, the use of the air conditioner/heating of the power of the #太μ production, the cost of the machine, the specific cost of the machine, and the body of the invention can be maintained by the high-power heater body. Cold/heating, and cold/, so it can achieve n force effect and purpose. (4) Cost can also effectively reduce the amount of work required to achieve 12 women (w) of 1270637 compared to existing cryogenic wafers, must use 20 In the absence of a cryogenic wafer, each of the refrigerating wafers in the high-power thermal semiconductor 6 of the present invention supplies a voltage withstand voltage of 16 〇v (volts volts) and 5 amps (ampere), so that each Cold wafers can generate 80 〇 w (watts) of power, so two refrigerated wafers can reach 16 (8) bound (watt) power requirements, far greater than the existing cryogenic wafers must use 20, so that this The invention can relatively reduce the manufacturing cost and the use of the body Inter 'above are merely preferred embodiments of the present invention it
=以此限定本發明實施之範圍’即大凡依本發”請專利 範圍及發明說明内衮所柞 a Μ合所作之間早的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 實施、组合剖視圖’說明本發明冷/暖氣裝置的較佳 圖2是一線路圖，說明一電源單元</ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a circuit diagram illustrating a power supply unit. FIG.
10 1270637 【主要元件符號說明】 1 *… ……殼體 4 •…· ••…能源交換單元 11… ……殼本體 41…* •…·管路 12… ****** 容室 5…… •…·泵浦 13…， …第二 容 室 6 … ••…高功率熱電半導體 14"·， P閉板 61…· ♦•…弟一側面 15*… 開 V 62***· •—弟一側面 16…. ♦…·第二 開 α 7…… …··引導單元 17*… ……第三 開 V 8…… •…擾動單元 18·*" ……濾網 81 ••… •…弟一風扇 2 ***** •…·電源單元 82… •…弟一風扇 3 … * ·…蓄溫單元 83 ·…· .…弟二風扇10 1270637 [Explanation of main component symbols] 1 *... ...... housing 4 •...· ••...energy exchange unit 11... ......shell body 41...* •...·pipe 12... ****** Room 5 ...... •...·Pump 13..., ...Second chamber 6 ... ••...High power thermoelectric semiconductor 14"·, P closed plate 61...· ♦•...Side side 15*... Open V 62***· •—Side side 16.... ♦...·Second open α 7.........··Leading unit 17*.........Third open V 8... •...Perturbation unit 18·*" ......Screen 81 • •... •...different fan 2 ***** •...·power unit 82... •...different fan 3...*·...storage unit 83 ·...·....two fan