TWI270215B - Optoelectronic semiconductor component and housing base-body for such a component - Google Patents

Abstract

An optoelectronic semiconductor component has at least one radiation (11) emitting semiconductor chip (1), which is arranged in the recess (2) of the housing base-body (3), said recess (2) is on the side adjacent to a wall (31) surrounding the semiconductor chip (1) and at least one part of the recess (2) is filled with a sealing material (4), which covers the semiconductor chip (1) and is well transmissive for the electromagnetic radiation emitted from the semiconductor chip (1). The inner side (32), which is adjacent to the recess (2), of the wall (31) is formed, so that the ring-shaped partial area (33), which fully surrounds the semiconductor component, of the inner side (32) is formed in the top-view when viewed from the front side of the semiconductor component, said area (33) is located in a shadow area when viewed from the radiation-emitting semiconductor chip (1) and at least partially is covered by the sealing material (4) when the semiconductor chip (1) is fully surrounded. In addition, this invention also provides the housing base-body for said semiconductor component.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optoelectronic semiconductor component (particularly a semiconductor component for emitting electromagnetic radiation) as described in the preamble of claim 1, and a patent application scope. The outer casing base described in the preface. More particularly, the present invention relates to a surface mountable optoelectronic component, particularly a leadframe, wherein the semiconductor wafer is disposed in a recess in the housing base and secured thereto. Preferably, the beta is prefabricated prior to mounting the semiconductor wafer in the recess. [Prior Art] The above semiconductor component is, for example, by Siemens Component 29 (1991)

Heft 4, pages 147 to 149, is known. Conventionally, for example, an epoxy-based casting material has been used as the covering material. However, such an encapsulating material is generally non-resistant to ultraviolet light, which will turn yellow faster under the influence of ultraviolet light and thus degrade the luminous efficacy of the assembly.

In order to improve the ultraviolet-durability of the radiation-emitting optoelectronic semiconductor component, a capping resin-based capping material or an encapsulating material composed of a terpene resin may be used. These encapsulating materials are slow enough to not turn yellow or yellow under the influence of short-wavelength radiation. However, the above-mentioned encapsulating material has the following difficulties: in a series of applications, especially when exposed to ultraviolet light, it is due to the material used in the outer casing-matrix (for example, 'polyphenylene diamine-based thermoplastics The combination of material) results in insufficient aging stability, as is the case with epoxy. Therefore, when using such an enclosure material in a conventional housing construction, 1270215, like its one described in Siemens Component 29 (1991) Heft 4', pages 147 to 149, creates a "shell-matrix" High risk of delamination between the material and the enclosure material. This delamination begins at the upper edge of the recess and continues to extend into the recess. In addition, in the worst case, the wafer envelope is completely peeled off from the outer casing-substrate. [Summary of the Invention]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor component or housing-substrate of the above type, and in particular to provide a surface mountable semiconductor component or a surface mountable housing-substrate of the above type, wherein the risk of delamination can be reduced, in particular The risk of complete delamination between the outer casing-base and the enclosure material can be reduced. In particular, the present invention provides a housing-substrate that is suitable for use in extremely miniaturized photovoltaic housing construction, particularly for use in extremely miniaturized LED- and photodiode formations. The above object is achieved by a semiconductor component having the features of claim 1 or a casing-matrix having the features of claim 19 of the patent application. Advantageous embodiments and other forms of the semiconductor component or the housing-substrate are described in claims 2 to 18 and 20 to 30. The front side of the semiconductor component or the casing-substrate in the present invention generally means an outer surface in a plan view of the semiconductor component as viewed in its emission direction. Thus, the front side thus allows the recess to penetrate deeper into the outer casing-substrate and the electromagnetic radiation generated by the semiconductor wafer can be emitted via the front side. In the semiconductor device of the present invention, a wall adjacent to the recess is formed to form a plurality of shaded portions disposed on the semiconductor wafer 1270215 i) on the semiconductor wafer in a top view on the front side of the semiconductor device or Ii) forming at least one, preferably all, of the area of the shadow portion surrounding the semiconductor wafer. The term "shadow" as used in the present invention means, in particular, that the portion of the area associated with each of the regions of the radiation-emitting semiconductor wafer that is exposed to radiation is in the shadow region and that at least a portion of the associated portion of the area is covered by the enclosure material. The covered and encapsulating material extends from the associated partial area to the semiconductor wafer and covers the semiconductor wafer.

In a particularly advantageous semiconductor component or particularly advantageous outer casing-substrate of the invention, a wall adjoining the recess is formed in order to form a ring on the semiconductor wafer which completely surrounds the semiconductor wafer in a top view on the front side of the semiconductor component. The shaded portion area, particularly in view of each point of the radiation-emitting region of the radiation-emitting semiconductor wafer, is located in the shadow region and completely surrounds the semiconductor wafer and at least a portion is covered by the enclosure material, the enclosure material The annular shadow portion area thus extends toward the semiconductor wafer and covers the semiconductor wafer. The above-mentioned shaded portion area is particularly advantageous in that it extends completely in a funnel-shaped manner from the front side of the assembly in the direction of the semiconductor wafer, wherein the shaded portion area causes the recess to taper in the direction toward the semiconductor wafer. It is particularly advantageous to arrange the shaded partial area on the upper edge of the wall such that the three-phase boundary of the air/enclosure material/case-substrate extends completely over the area of the shadow portion and thus one from the semiconductor wafer Undesired radiation on the front side of the enclosure material is not applied to the shaded area or only to a small extent (eg, due to reflection of 1270215 on the front side of the enclosure material) applied to the shadow Area. Preferably, at least one shaded portion area is formed on the edge of the notch toward the SU side of the outer casing-substrate, particularly on the front side of the front side of the wall' or the area of the shadow portion itself is the wall The front side of the front side. This advantageously saves space in the area of the shadow portion, thus saving space for the entire assembly, and the recess for reflection does not have to be reduced when compared to conventional components without UV and epoxy-free enclosures. .

The at least one shaded portion area can advantageously be formed in a particularly simple manner on the edge of the front side of the wall by means of at least one bevel (in case of space saving, preferably by a single bevel), which is particularly simple. The wall is inclined towards the recess. The front side edge of the recess is thus formed in the form of a funnel toward the semiconductor wafer. In an advantageous embodiment, at least a portion of the positive side of the wall is formed in the form of a funnel over its entire width and thus at least a portion is considered to be a component of the recess. A complete funnel-shaped shaded portion area can be achieved by the outer casing-matrix of the present invention and has the particular advantage that the shaded portion of the funnel shape can be well filled with the enclosure material as compared to The conventional components of the same construction form do not shrink the area of the recess as a reflector due to the geometry of the recess of the present invention. In another advantageous form, the shaded portion area is formed on the front side edge of the wall by at least one of the walls (which is preferably only space-saving by space) by a concave bevel in the cross-section. on. By this form, it is also possible to achieve a shaded partial area in the outer casing-matrix having a large recess with planar radiation incident on the wall. 1270215 The outer casing-substrate of the present invention can be used particularly advantageously in a semiconductor component provided with a semiconductor wafer, wherein at least a portion of the semiconductor wafer emits ultraviolet radiation, which can be, for example, a nitride that emits blue or ultraviolet radiation. - A light-emitting diode wafer based on a compound semiconductor material, as described in the document WO 〇l/39282 A2, which is hereby no longer described in detail.

The so-called "nitride-compound semiconductor material is preferred, and in the context of the present invention, the light-emitting Jiajing layer sequence or at least a portion thereof comprises a nitride-III-V-compound semiconductor material, preferably Is AlnGamIni_n_mN, where 1, OSmS 1 and n + ms 1. Therefore, such a material does not necessarily have a mathematically correct composition as shown by the formula of the above form. Conversely, it may have one or more dopants and other components, These components do not substantially alter the specific physical properties of the AlnGamlnmN material. However, for the sake of simplicity, the above formula only contains the main components of the crystal grid (Al, Ga, In, N) 'When a part of these components can be small When other materials are substituted, the encapsulating material is preferably made of a bismuth material, and the encapsulating material may especially be an enamel resin. In addition, the gel form of the encapsulating material may promote the detachment. The risk of the layer is reduced. In terms of further degradation of the risk of delamination, it is advantageous to have a plurality of fixing elements formed on the inner shadow portion of the area. The area of the shadow portion begins or extends into the enclosure material starting from the inner side of the recess. These fixing elements are preferably evenly distributed over the area of the shadow portion 'ie, they are arranged in the shadow at the same pitch. Part of the area. A fixed nose, a knot or a rib protruding from the area of the shadow portion is suitable for use as a fixing element. A particularly advantageous way of securing each fixing element is to completely cover the material of the enclosure 1270215 " Therefore, the state of the encapsulation material is particularly high in the interior of the recess, so that the encapsulating material completely covers the fixing elements. This can counteract the above-mentioned delamination and can also be overcome by the conventional Pick- The and-Place device facilitates reprocessing of the assembly. Further, the fixed member described above can advantageously provide an advantage to the following phenomenon: an enclosure material that breaks into the recess in a fluid state (eg,矽 resin) due to the force caused by the capillary phenomenon of the capping material, a high drawing phenomenon is formed on each of the fixing members, so that the area of the shadow portion and the edge of the Φ portion of the notch are wetted. The above object is achieved in particular by a semiconductor component in which the encapsulation material is at least one shaded area on the outer edge of the recess of the outer casing-substrate (at least a major portion of which is comprised by the semiconductor wafer Formed by the emitted radiation, a sealing strip is formed which can form a broad shielding effect on the radiation of the wafer. It is particularly advantageous to form the encapsulating material in a region of the annular shadow portion that completely surrounds the semiconductor wafer. Shadow seal ring.

The remainder of the recess is preferably a reflector for forming radiation from the semiconductor wafer. In a particularly advantageous embodiment, the housing base is formed on a metal lead frame made of a plastic-forming material, in particular by sputtering and/or pressing. The luminescent material can be mixed in an encapsulating material that absorbs a portion of the radiation emitted by the semiconductor wafer and emits a radiation having a wavelength different from the absorbed radiation. Similarly, the semiconductor wafer can be provided with an outer cover layer comprising a -10- 1270215 ^ luminescent material. Thus, each of the light-emitting diode assemblies can be made in a simple manner, which can emit mixed color light or emit color-adjusted light. Suitable luminescent materials are described, for example, in WO 97/50 1 32 and WO_9 8/1 27 57 A1, the disclosure of which is incorporated herein by reference to the outermost side of the reference notch - or the upper edge of the shadow portion area The edges are as smooth as possible, i.e., they do not have various grooves, notches, craters or the like. This advantageously reduces the risk of spillage of the enclosure material when the recess is filled. Preferably, each of the retaining elements does not reach the outer edge of the recess to ensure a smooth edge. The above description of the components of the present invention can be similarly applied to the outer casing-matrix of the present invention.

In the present invention, a component housing (housing-substrate+encapsulation material) can be advantageously used not only in radiation-emitting components (particularly semiconductor wafers, in particular at least a portion of which emit ultraviolet light), but also advantageously (for example, High heat resistance) A component for radiation detection (for example, a photodiode or a phototransistor). The component-case (housing-substrate+encapsulation material) formed according to the invention can achieve a very large size. Small configuration, because the recess has only the end on the front side of the outer casing-base (ie, directly on the transition from the inner wall of the recess to the front side of the outer shell-base) Part of the area in the shaded area. Its advantages are: the three-phase, the outer layer - the base / the cover material / the air (or the surrounding atmosphere), - the boundary line will not receive the radiation of the semiconductor wafer - 1170215 A much smaller radiation will be received. Other advantages and advantageous forms of the semiconductor component or the housing-substrate of the present invention will be described below with reference to the embodiments shown in Figures 1 to 6. [Embodiment] In each embodiment The same or equivalent components of the various figures are denoted by the same reference symbols, respectively, and the drawings are not substantially drawn according to the scale of the real elements of the invention. Conversely, the various components of the various embodiments are For clarity, the drawings may be displayed in an enlarged manner or not according to the actual ¥ size ratio. The components or housing-substrate shown in each figure are a surface mountable so-called sidelooker illumination. a so-called surface mountable casing-base 3 for a diode assembly or such a light-emitting diode assembly, the assembly

There is a case in which an ultraviolet light emitting diode chip 1 can be additionally emitted, which can be, for example, a light emitting diode chip which emits visible blue light mainly in In GaN, which can be designed to emit ultraviolet light intentionally or unintentionally. radiation. Such a light-emitting diode wafer has been described, for example, in WO 0 1/39282 A2, and therefore will not be described in detail here. The above-described component housing and housing-substrate are also basically suitable for use in other forms of light-emitting diode wafers, as well as in infrared-emitting components designed especially for high temperature applications. The light-emitting diode wafer 1 is mounted on a conductive wafer termination member of the metal lead frame 6 in a wafer region of the outer casing-substrate 3 (represented by a region 2 1 surrounded by a broken line in FIGS. 1 to 4) via a The connecting wire 5 is connected to the conductive wire end piece 6 1-12-1270215 which is electrically separated from the wafer end piece 62 by the lead frame 6. Other forms of contact LED chips (eg, Flip-Chip mounted light emitting diode wafers) have anode- and cathode contact regions disposed on one side of the wafer and facing the leadframe. A light-emitting diode wafer can also be used in the present invention. Only the installation technology needs to be adjusted.

On the lead frame 6, there is a pressing material such as a thermoplastic (for example, a polyphenylene diamine-based pressing material which is filled with titanium oxide or cerium oxide and/or glass fiber) by sputtering or sputtering. The resulting outer casing, the base body 3, has a recess 2. In the recess 2, a light-emitting diode wafer 1 is present, which is electrically fixed to the wafer termination member 62, for example, by a conductive adhesive. The recess 2 is laterally adjacent to a wall 31 surrounding the semiconductor wafer 1 and at least a portion of the recess is interposed with a capping resin material 4, which covers the semiconductor wafer. 1 and the electromagnetic radiation emitted from the semiconductor wafer 1 can be well transmitted. The encapsulating material 4 comprises, for example, a radiopaque, in the form of a transparent gel, a polysilicon-based casting material. A luminescent material powder 7 (for example, a luminescent material powder mainly composed of YAG:Ce, TbAG:Ce or TbYAG:Ce) is mixed into the casting material. Such luminescent materials are known, for example, from W Ο 9 8 / 1 2 7 5 7 and WO 0 1 /0 8 45 2 , the disclosure of which is incorporated herein by reference. In the assembly for which only the original radiation of the LED chip 1 should be emitted, the encapsulating material 4 may be a casting material in the form of a transparent gel mainly composed of polyoxalate. Alternatively, the encapsulating material 4 can be provided with diffusing micro- 13-1270215 particles and thus becomes darker.

An inner side 32 adjacent to the recess 2 has a front end on the front side of the wall 3 1 having a shape that faces downwardly toward the inside of the recess 2 (i.e., toward the semiconductor wafer 1) - and completely surrounds the recess Beveled edge 3 3 1. The beveled edge 3 3 1 produces an annular shadowed portion area 3 3 which completely surrounds the semiconductor wafer 1 in a top view viewed on the front side of the semiconductor component, which is completely shadowed when viewed from the entire point on the front side of the semiconductor wafer 1. At least a portion of the region and which is completely surrounded by the semiconductor wafer 1 is covered by the encapsulation material 4. The front side edge of the recess forms a funnel shape. The partial area of the shadow is also the front side of the front side of the wall 31. The second embodiment of Figs. 2 to 4 differs from the first embodiment described above in particular in that the shadow portion area 3 3 of the inner side of the inner ring 3 is in the cross section by the front side of the front side of the wall 3 1 A concave shadow zone 3 3 2 is formed. The third embodiment of FIGS. 2 to 6 differs from the first embodiment described above in particular in that a plurality of fixing members 24 are formed in a manner of uniformly surrounding the notch 2 on the area 3 3 of the shadow portion of the ring, It is here a form of fixed grain. These fixed pellets extend from the shaded portion area 3 3 into the encapsulating material 4 but do not pass through the encapsulating material 4, i.e., each of the fixed pellets is completely covered by the encapsulating material 4. When viewed from the semiconductor wafer 1, the encapsulating material is continuously surrounded by the respective fixing members 24 on the shaded portion area 3 3 . For all of the above embodiments, the outer casing-base 3 and the respective fixing members 24 are preferably formed together in a single piece and are preferably formed during the sole sputtering or sputtering process. -14-1270215' The housing base and encapsulant material corresponding to the various embodiments can also be used to receive radiation semiconductor wafers (e.g., photodiode wafers). A photodiode wafer can be disposed at the position of the light emitting diode chip 1. The configuration of the present invention is equally applicable to laser diode assemblies, side detection components, and high temperature applications. The technical description of the invention in accordance with the various embodiments is of course not a limitation of the invention. Conversely, all of the components and the housing-base (which has a recess to accommodate the semiconductor wafer and a ring-shaped bevel or the like on the front edge of the recess) can use the techniques of the present invention, wherein the Φ is oblique The edges are obscured by the radiation of the semiconductor wafer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of the assembly of the present invention. Figure 2 is a cross-sectional view of a second embodiment of the assembly of the present invention. Figure 3 is a cross-sectional view of a third embodiment of the assembly of the present invention. Figure 4 is another cross-sectional view of the second embodiment. Fig. 5 is a plan view showing the perspective of the outer casing-base of the first embodiment. Fig. 6 is a plan view showing the perspective of the outer casing-base of the third embodiment. 0 [Description of component symbols] 1 Radiation-emitting semiconductor wafer 11 Radiation 2 Notch 2 1 Wafer area 2 4 Fixing element 3 Housing - Base 3 1 Wall -15 - 1270215 32 Inner side 33 Part of inner side 32 Area 331 Ring phase 3 32 concave bevel 4 cover material 5 connecting line 6 lead frame 6 1 wire end piece

62 wafer terminal parts

-16-

Claims (1)

1270215 修)) Replacement page wr—III a~i »πι I . No. 94 1 1 76 1 3 “Optoelectronic semiconductor components and the shell substrate used” Patent (amended in September 2006) X. Patent application Scope: 1. An optoelectronic semiconductor component having at least one semiconductor wafer (1) that emits radiation (11), the semiconductor wafer (1) being disposed in a recess (2) of the outer casing-base (3), the recess (2) adjacent to an inner side (32) of a wall (31) surrounding the semiconductor wafer (1) on the side surface and at least a portion of the recess (2) is interposed with the cover material φ (4). The cover material (4) covers the semiconductor wafer (1) and is well permeable to electromagnetic radiation emitted by the semiconductor wafer (1), characterized by: forming the inner side (32) of the wall (31) to make the inner side (3) 2) having at least one partial area (33) in a top view when viewed on the front side of the semiconductor component, which is located in the shaded area when viewed by the semiconductor wafer (1) for radiation and at least part of which is covered by the enclosure Covered by material (4), the enclosure material (4) is directed toward the semiconductor by the area (33) Wafer (1) extending and covering the semiconductor wafer ⑴. 2. The semiconductor component of claim 1, wherein the inner side (32) of the wall (31) is formed such that the inner side (32) surrounds the semiconductor wafer in a top view when viewed on the front side of the semiconductor component. And configured to have a plurality of partial areas (3 3) which are located in the shaded area when viewed by the semiconductor wafer (1) for emitting radiation and at least a portion of which is covered by the encapsulating material (4) The cover material (4) extends from the partial area (33) toward the semiconductor wafer (1) and covers the semiconductor wafer (1) ° 3 . The semiconductor component of claim 1 is formed therein. 1) The inner side (32) of 1270215 β, such that the inner side (32) has a ring-shaped partial area (33) completely surrounding the semiconductor wafer (1) when viewed from the front side of the semiconductor component, which emits radiation The semiconductor wafer (1) used is located in the shaded area when viewed and at least partially covered by the encapsulation material (4) in the case of completely surrounding the semiconductor wafer (1). The semiconductor component according to any one of claims 1 to 3, wherein at least one partial area (3 3) of the inner side (32) is formed on the edge of the front side facing the outer casing-base (3) . The semiconductor component according to any one of claims 1 to 3, wherein at least one partial area (3 3) of the inner side (32) is the front side of the outer casing_base (3). The semiconductor component according to any one of claims 1 to 3, wherein at least one partial area (3 3) of the inner side (32) is formed on the wall by at least one oblique side (331) (3 1) On the edge of the front side. The semiconductor component according to any one of claims 1 to 3, wherein at least one partial area (3 3) of the inner side (32) is in the cross section by at least one of the walls (31) A concave bevel (3 32) is formed on the edge of the front side thereof. The semiconductor component of any one of claims 1 to 3, wherein the semiconductor wafer (1) has a material suitable for emitting ultraviolet radiation in at least a portion. The semiconductor component according to any one of claims 1 to 3, wherein the encapsulating material (4) comprises a bismuth-based material, in particular, a bismuth resin. The semiconductor component of any one of claims 1 to 3, wherein 1270215 • the enclosure material (4) has a gel form of strength. The semiconductor component of any one of claims 1 to 3, wherein at least one of the partial areas (3 3) of the inner side (32) forms at least one fixing member (24) extending into the In the enclosure material (4). 12. The semiconductor component of claim 11, wherein the at least one partial area (3 3) of the inner side (32) is distributed (particularly uniformly distributed around the recess (2)) A fixing element (24) that extends from the partial area (33) into the enclosure material (4). 41 1 3 The semiconductor component of claim 12, wherein the fixing member is formed by a fixed nose protruding from at least one partial area (3 3 ) of the inner side (32), and the fixed particle is fixed. Or the ribs are fixed and the enclosure material (4) spans the respective fixing elements. The semiconductor component of any one of claims 1 to 3, wherein the enclosure material (4) surrounds the recess (23) on at least one partial area (33) of the inner side (32) (2) ) to form a general sealing ring. 1 5 · The semiconductor component of the Ε 靑 靑 靑 靑 靑 丨 丨 丨 。 。 , , , 宜 宜 宜 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该1 6 . The semiconductor component according to any one of claims 1 to 3, wherein the outer casing-substrate (3) is in a single piece on a metallic lead frame (6), in particular by sputtering Or pressed and prefabricated from plastic-forming materials. The semiconductor component of any one of claims 1 to 3, wherein the encapsulating material (4) comprises at least one luminescent material 'which is adapted to absorb a portion of the radiation emitted by the semiconductor wafer and A radiation having a wavelength that has changed relative to the absorbed radiation is emitted. The semiconductor component of any one of claims 1 to 3, wherein the semiconductor wafer has at least one luminescent material adapted to absorb a portion of the radiation emitted by the semiconductor wafer and can be emitted A ray that has changed in wavelength relative to the absorbed radiation. 1 9 · A housing-substrate for at least one semiconductor wafer (1), in particular for use in a radiation-emitting semiconductor component having at least one semiconductor wafer (1) that emits radiation (11) and Having a recess (2) for accommodating a semiconductor wafer (1), a wafer region (21) is present in the recess (2) and the recess (2) # is laterally adjacent to a wall surrounding the wafer region (21) The inner side (32) of (31) is characterized in that: the inner side (32) of the wall (31) is formed such that the inner side (32) has at least one partial area in a plan view when viewed on the front side of the outer casing-base body. (3 3 ), which is located in the shaded area when viewed by the wafer area (21), and the partial area (33) can be formed by an encapsulation material for forming at least a portion of the encapsulation of the semiconductor wafer (1). The encapsulation material (4) extends from the partial area (3 3) toward the semiconductor wafer (1) and covers the semiconductor wafer (1). • 20. The outer casing-substrate of claim 19, wherein the inner side (32) of the wall (31) is formed such that the inner side (32) surrounds the wafer in a top view when viewed on the front side of the outer casing-substrate The region (21) is disposed and has a plurality of partial regions (3 3 ) which are located in the shadow region when viewed by the wafer region (21) and which can be used as a semiconductor wafer (1) forming at least a portion of the encapsulating material used for encapsulation to break into the 'covering material (4) from the portion of the area " (33) toward the semiconductor wafer (1) and covering the semiconductor wafer . * 2 1. The outer casing-base of claim 19, wherein the inner side (32) of the wall (3 1) 1270215, ··, • is formed such that the inner side (32) is on the front side of the outer casing-substrate The top view when viewed from above has a portion of the annular portion (3 3) that completely surrounds the wafer region (21). It is located in the shadow region when viewed from the wafer region (21), and the portion (33) can be An encapsulating material for forming at least a portion of the encapsulation of the semiconductor wafer (1) to be inserted, such that the encapsulation material (4) extends from the portion of the area (3 3) toward the semiconductor wafer (1) The semiconductor wafer is covered. A casing-matrix according to any one of the claims 1-9 to 2, wherein at least one partial area (3 3) of the inner side (3 2) is formed in the outer casing - (I matrix) 3) The outer casing-matrix of any one of claims 1 to 2, wherein at least one partial area (3 3) of the inner side (32) is the outer casing - The outer side of the substrate (3). The outer casing-substrate of any one of the items (1) to (2), wherein at least one partial area (33) of the inner side (3 2) is at least A beveled edge (33 1) is formed on the end of the front side of the wall (31). 25. The outer casing-matrix of any one of the items 19 to 21 of the patent application, the inner side (3) 2) at least one partial area (3 3) is formed on the front end of the front side by at least one of the walls (31) having a concave bevel (3 3 2) in the transverse plane. The outer casing-substrate of any one of clauses 19 to 21, wherein at least one fixing element for the covering material (4) is formed on at least one partial area (3 3) of the inner side (32) ( 24). 27. The outer casing-substrate of claim 26, wherein at least one partial area (3 3) of the inner side (32) is distributed (particularly uniformly surrounding the 1270215 * 4 . notch (2) as a cloth The cover material (a)) is provided with a plurality of fixing elements 4). 28. If the outer casing-base of claim 27 is applied, the notch (2) is formed in $, so that the covering material (4) is on at least one partial area (3 3) of the inner side (32) A general sealing ring surrounding the recess (2) can be formed on the exterior of each of the fixing elements (24) when viewed from the inside. A casing-matrix according to any one of claims 9 to 21, wherein the notch (2) forms a reflector. The outer casing-substrate of any one of claims 19 to 21, wherein the outer casing-substrate (3) is prefabricated on the metallic lead frame (6) by sputtering or pressing.