TWI267496B - Tunable microwave dielectric ceramic composition, the preparation thereof and the use thereof - Google Patents

Tunable microwave dielectric ceramic composition, the preparation thereof and the use thereof Download PDF

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TWI267496B
TWI267496B TW93135644A TW93135644A TWI267496B TW I267496 B TWI267496 B TW I267496B TW 93135644 A TW93135644 A TW 93135644A TW 93135644 A TW93135644 A TW 93135644A TW I267496 B TWI267496 B TW I267496B
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microwave dielectric
microwave
adjustable
metal electrode
electrode layer
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TW93135644A
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Chinese (zh)
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TW200616925A (en
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Yu-Nan Lin
Yan-Jr Li
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Univ Tsinghua
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Abstract

The present invention provides a tunable microwave dielectric ceramic composition and the preparation thereof, said tunable microwave dielectric ceramic composition is composed of (BaxSrl-x)TiO3 and Ba4Ti13O30, wherein 0 < x < 1. The present invention also provides a method for preparing a tunable microwave element and a tunable microwave element therefrom, said tunable microwave element containing a tunable microwave dielectric ceramic thick film containing above tunable microwave dielectric ceramic composition.

Description

1267496 九、發明說明: 【發明所屬之技術領域】 本發明是m種可調式微波介電陶i组絲(T_bie 寥rowave dielectric ceramic compositi〇n),特別是關於一種 由(BaxSr^TiOd以&amp;^所構成之可調式微波介電陶瓷 組成物、用於製備一可調式微波元件之方法以及由其所製 成之可調式微波元件,該可調式微波元件具有一含有上述 可調式微波介電組成物之可調式微波介電厚膜。 【先前技術】 由於可調式微波介電陶瓷具有優異的可調變性 (timability),加上其之介電特性會隨著外加電場而有所變化 ,因此,非常適合應用於各種可調式微波元件之製造。一 般而j,该可調式微波元件除了需具備高可調變性之外, 亦需^備良好之微波特性。在此所指之微波特性表示於微 波頻帶(m】cr0Wave frequency band)下具備適當介電常數(⑺ &lt;Κ&lt; 1〇〇)、低介電損耗(tangent loss,tan5),或介於適當數 值乾圍之品質因子(quality fact〇r,Q二⑽叫與頻率之乘積 ,亦即 Qxf&gt; 2000。 ' 習知之可調式微波介電陶瓷具有以下三種形式:塊材 (^lk matenal)、薄膜(thin film)以及厚膜(thick fiim)形式, ^ ^使用可調式微波介電陶瓷塊材,必須施加極大的 兒壓(仟伏以上)才能達到足夠的可調變性,所以目前業界較 ,、向利用&quot;玄可调式微波介電陶瓷塊材。當利用一可調式 4波”電陶究薄膜來製造該可調式微波元料,於實際應 1267496 用上又發現该可調式微波介命 ,而π、,人 ,丨电,專朕具有南介電損耗的缺點 而不適合用來製造該可铜々叫、士 —从 ”。式U波兀件。ij此,為了獲得 肩·可調變性及微波特性之可調式微波元件,目前已 有人言試利用—可調式微波介電㈣厚膜 ^ 微波元件。 / j旧式 再者,於眾多陶曼材料中,符合各種電子應用需求且 常用來做為可調式介電元件之材料為鈦酸銘鋇 价⑽軸出_’即(BaxSri.x)Ti〇3]。而雖然欽酸銷鎖薄膜 具備了高介電常數、高可調變性以及低介電損耗等特性, 但易因為產生氧空缺(vacancy)、Ti4+還原為Ti3+等原因,導 致絕緣性下降而造成介電損耗偏高等問題。目前較常使用 之改善方式是於鈦酸勰鋇之製備過程中添加異價元素 (aliovalent element)或低損耗的氧化物。 例如,C· W· Hubbard等人於論文,,办沖w k价叫2001)579,ρρ·248-250,,中曾揭露,藉由在鈦酸鏍鋇中 添加氧化鎂(MgO),並利用電泳披覆法(electr〇ph〇mic deposition)來製造用於一可調式微波元件之厚膜。於此文獻 中發現,該厚膜之可調變性、介電常數及介電損耗會隨著 氧化鎮之含量增加而減少。由此可見,添加氧化鎂僅能降 低介電4貝耗,而無法有效提升該厚膜之可調變性。 由上述可知,一具備高可調變性及良好微波特性之可 調式微波介電陶瓷材料,仍存在一需求。 【發明内容】 為了獲得一具備可調變性以及良好微波特性之可調式 1267496 山“電陶竞材料,本發明嘗試製 队Ti]3〇3G所構成 (心1.抑〇3及 將-含鋇之氧化物'人介電嶋成物,其係 以混合,再-過研卢及二之乳化物與一含鈦之氧化物予 丹、,二過研磨及煆燒等步驟所製得。 成物口二:發明提供’觸可調式微波介電陶竟植 1;;; (BaxSri^1267496 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to m kinds of adjustable microwave dielectric ceramics (T_bie 寥rowave dielectric ceramic compositi〇n), in particular, a kind of (BaxSr^TiOd &amp; The tunable microwave dielectric ceramic composition, the method for preparing a tunable microwave component, and the tunable microwave component made thereof, the tunable microwave component having a tunable microwave dielectric composition Adjustable microwave dielectric thick film. [Prior Art] Because the adjustable microwave dielectric ceramic has excellent tunability, and its dielectric properties change with the applied electric field, It is very suitable for the manufacture of various adjustable microwave components. Generally, in addition to the high tunability, the tunable microwave component also needs to have good microwave characteristics. The microwave characteristics referred to herein are expressed in the microwave. The band (m) cr0Wave frequency band has an appropriate dielectric constant ((7) &lt; Κ &lt; 1 〇〇), low dielectric loss (tangent loss, tan 5), or between appropriate The quality factor (r2) is called the product of the frequency, which is Qxf&gt; 2000. The conventionally tunable microwave dielectric ceramic has the following three forms: ^lk matenal, film (thin film) and thick film (thick fiim) form, ^ ^ use adjustable microwave dielectric ceramic block, must apply a large pressure (above the crouching) to achieve sufficient variability, so the current industry, To the use of "Xuan adjustable microwave dielectric ceramic block. When using an adjustable 4-wave" electric ceramic film to make the adjustable microwave element, the actual use of the adjustable microwave device is also found in 1267496. And π,, people, electricity, specializes in the shortcomings of South dielectric loss and is not suitable for the manufacture of the copper squeak, the singer--" U wave element. ij, in order to obtain shoulder variability And microwave-adjustable microwave components have been tried and used - adjustable microwave dielectric (four) thick film ^ microwave components. / j old-style, in many Taoman materials, in line with various electronic applications and commonly used to do Adjustable The material of the electrical component is titanic acid (10) axis _' (BaxSri.x) Ti 〇 3]. Although the phthalate lock film has high dielectric constant, high variability, low dielectric loss, etc. Characteristics, but it is easy to cause problems such as oxygen vacancy, Ti4+ reduction to Ti3+, etc., resulting in a decrease in insulation and high dielectric loss. The more commonly used improvement method is to add during the preparation of barium titanate. An alovalent element or a low loss oxide. For example, C. W. Hubbard et al. in the paper, the price of the call is called 2001) 579, ρρ·248-250, which was revealed by adding magnesium oxide (MgO) to barium titanate and using it. Electrolytic coating (electr〇ph〇mic deposition) is used to make thick films for a tunable microwave component. It is found in this document that the tunable denaturation, dielectric constant and dielectric loss of the thick film decrease as the content of the oxidized town increases. It can be seen that the addition of magnesium oxide can only reduce the dielectric 4 watts, and can not effectively improve the tunability of the thick film. As can be seen from the above, there is still a need for a tunable microwave dielectric ceramic material having high variability in denaturation and good microwave characteristics. SUMMARY OF THE INVENTION In order to obtain an adjustable 1267496 mountain "electric ceramics material with adjustable denaturation and good microwave characteristics, the present invention attempts to form a team Ti] 3〇3G (heart 1. 〇 3 and will - contain 钡The oxide 'human dielectric composition, which is prepared by mixing, re-injecting the emulsion of the Lu and the second with a titanium-containing oxide to Dan, two grinding and simmering. Object 2: The invention provides 'touch adjustable microwave dielectric Tao Jingzhi 1;;; (BaxSri^

本^明亦提供一種用於制傷卜、《ρ ·~ρ A 组成物之” “ 周式微波介電陶兗 成物之方法,係包含下列步驟·· ⑷將-含鋇之氧化物、一含錄之氧化物及一含鈦之氧化 物予以混合,以製得一前驅物; (b)將一溶劑加入該前驅物中,以獲得-懸浮液; ⑷將該懸浮液予以粉碎,以獲得_混合均勾之裝料; ⑷於一預定溫度下,將該敷料予以烘乾’以獲得一混合 物;以及 / σ (e)於-預定溫度下,令該混合物進行般燒,以獲得該可 調式微波介電陶瓷組成物。 此外,本發明另提供一種用於製備一可調式微波元件 之方法,包含下列之步驟·· (A) 於一基板上形成一内金屬電極層; (B) 藉由一網印法,於該内金屬電極層上形成一可調式微 波介電厚膜,該可調式微波介電厚膜含有上述可調式 微波介電陶究組成物;以及 (C) 分別於該可調式微波介電厚膜之上方及該基板之下方 1267496 形成二外金屬電極層,以繫 ^ ^ 衣传该具有可調式微波介電 异膜之可調式微波元件。 表後,本發明提供一種星 ^ ^ | —可調式微玻介雷厚膜之 可調式微波元件,包含一其4 w政波” ^子胲之 全Μ + π昆 ^ 土板、一位於該基板上方之内 主屬书極層'一位於該内金屬 ^ /e ^ 6上方之可調式微波介 ,子肤U及二^刀別位於該可 美叔夕丁+ 式被波介電厚膜之上方及該 暴板之下方之外金屬電極層, ^ ^ JL ^ 10亥可调式微波介電厚 ^有上述可調式微波介電H組成物。 【實施方式】 ^發明詳細說明&gt; ^ ^ 」碉式彳放波介電陶瓷組成物 由㈣心卿及叫、〜所構成,其中,〇〈… 帝 《月之具組例中.’ x=0.6,亦即該可調式微波 电陶乾組成物是峰為4)τ叫及ΜΑ所構成。 本發明之可調式微波介電陶竟組成物中之(BaxSr“)Ti ^ Ba4Th3〇3G的含量比例可依據最終產品之性質及用途進 ^整’較佳地 ’(BaxSiVx)Ti〇3A Ba4Tii3〇3Q 之含量 於9··]至〗:1之間。 ^再者,本發明亦提供一種用於製備上述可調式微波介 电陶瓷組成物之方法,係包含下列步驟: )將3鋇之氧化物、一含勰之氧化物及一含鈦之氧化 物予以混合,以製得一前驅物; (b)將一溶劑加入該前驅物中,以獲得一懸浮液,· (C)將該懸浮液予以粉碎,以獲得一混合均句之漿料; 1267496 (d)表 預定溫度下,將該漿料予以:):共乾,以獲得一混合 物;以及 (6)於—預定溫度下,令該混合物進行煆燒,以獲得該可 調式微波介電陶瓷組成物。 車父佳地,該步驟(a)之該含鋇之氧化物係選自於由下列 所構成之族群:鈦酸鋇(barium titanate,BaTi〇3)、碳酸鋇 (barium carb〇nate,BaC〇3)及氧化鋇(barium ⑽也,Ba〇)。 方、本發明之一具體例中,該含鋇之氧化物為鈦酸鋇。 較佳地’該步驟(a)之該含勰之氧化物係選自於由下列 構成之族群:鈦酸勰(strontium titanate,SrTi〇3)、碳酸總 (stromi賊 carbonate,SrC〇3)及氧化勰(str〇ntium 〇&gt;dde,The present invention also provides a method for making a wound, "the composition of ρ · ~ρ A", "a method of microwave-type dielectric ceramics, which comprises the following steps. (4) a precursor oxide and a titanium-containing oxide are mixed to prepare a precursor; (b) a solvent is added to the precursor to obtain a suspension; (4) the suspension is pulverized to Obtaining a mixture of _mixed hooks; (4) drying the dressing at a predetermined temperature to obtain a mixture; and / σ (e) at a predetermined temperature, causing the mixture to be fired to obtain the Adjustable microwave dielectric ceramic composition. In addition, the present invention further provides a method for preparing a tunable microwave component, comprising the steps of: (A) forming an inner metal electrode layer on a substrate; (B) by using a screen printing method; Forming an adjustable microwave dielectric thick film on the inner metal electrode layer, the adjustable microwave dielectric thick film containing the adjustable microwave dielectric ceramic composition; and (C) respectively for the adjustable microwave dielectric thick film A second outer metal electrode layer is formed on the upper side and below the substrate 1267496 to transfer the adjustable microwave component with the adjustable microwave dielectric film. After the table, the present invention provides a tunable microwave component of a tunable micro-glass ray-thick thick film, comprising a 4 w political wave "^ 胲 胲 Μ Μ Μ ^ 土 土 一 一 一The uppermost book layer in the upper part of the substrate is an adjustable microwave medium located above the inner metal ^ /e ^ 6 , and the sub-surface U and the two-knife are located in the thick film of the singular The metal electrode layer above and below the slab, ^ ^ JL ^ 10 hai adjustable microwave dielectric thickness ^ has the above-mentioned adjustable microwave dielectric H composition. [Embodiment] ^ Detailed Description of the Invention &gt; ^ ^ The composition of the 彳-type 波 wave dielectric ceramic consists of (4) Xinqing and 、, ~, 〇 ... ... ... ... ... 月 月 月 月 月 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 可调The composition is composed of a peak of 4) τ and ΜΑ. The content ratio of (BaxSr")Ti^Ba4Th3〇3G in the tunable microwave dielectric ceramic composition of the present invention can be adjusted to 'better' (BaxSiVx) Ti〇3A Ba4Tii3〇 according to the nature and use of the final product. The content of 3Q is between 9··] and 1:: Further, the present invention also provides a method for preparing the above-mentioned adjustable microwave dielectric ceramic composition, which comprises the following steps: And a cerium-containing oxide and a titanium-containing oxide are mixed to prepare a precursor; (b) a solvent is added to the precursor to obtain a suspension, (C) the suspension The liquid is pulverized to obtain a slurry of a mixed sentence; 1267496 (d) at a predetermined temperature, the slurry is:): co-dried to obtain a mixture; and (6) at a predetermined temperature, The mixture is calcined to obtain the tunable microwave dielectric ceramic composition. The father of the step (a), the cerium-containing oxide is selected from the group consisting of barium titanate ( Barium titanate, BaTi〇3), barium carbonate (barium carb〇nate, BaC〇3) and cerium oxide Barium (10), also, Ba〇). In one embodiment of the invention, the cerium-containing oxide is barium titanate. Preferably, the cerium-containing oxide of the step (a) is selected from The following constituent groups: strontium titanate (SrTi〇3), total carbonic acid (stromi thief carbonate, SrC〇3), and strontium oxide (str〇ntium 〇&gt;dde,

SrO)方;本發明之一具體例中,該含錄之氧化物為鈦酸錯。 較佳地,該步驟(a)之該含鈦之氧化物為二氧化鈦 〇 方;本發明之用於製備該可調式微波介電陶瓷組成物之 方法中,該步驟(a)之該含鋇之氧化物、該含勰之氧化物及 該含鈦之氧化物的用量比例是依據該組成物中之 χ)Τι〇3及BagTinOw的含量比例進行調整。較佳地,基於所 有反應物之齡,該步驟⑷之Μ鋇之氧化物的用量範圍 係介於60至65 wt%之間;該含鳃之氧化物的用量範圍係介 於!5至30 之間,·以及該含鈦之氧化物的用量範圍係介 於5至25 wt%之間。 該步驟⑻所使用之溶劑可為任何習知之適當溶劑,較 佳地,該步驟(b)之溶劑係選自於由下列所構成之族群:去 1267496 離子水、曱乙酮、酒精、 、7萨,4斤 本、二曱苯、己烷、三氯乙醇 、乙知,以及該等之組合。 步驟⑻之溶劑為去離子水。&amp;本發明之—具體例中’該 該步驟(C)之懸浮液 人这^^用任何習知的機器進行充分混 己及叔钎,而於本發明之一 e .,, /、月豆例中,該步驟(C)之懸浮液 疋利用1星球磨碎及混合。 該步驟(d)之烘乾溫度 ^ '、依據该步驟(b)所使用之溶劑的 沸;進仃调整,而於本發一 r- 〇λ 月之一具體例中,該步驟(d)之烘 乾/皿度‘介於90至100〇c之間。 選擇性地,本發明之 ^ 用衣‘備上述可調式微波介電陶 =:之,法更包含—步驟叫該步驟㈣是將該步 文、、且成物粕末的粒徑分佈均勻。 較佳地’該步驟⑷之炮燒溫度係介方&quot;00與出ooc之 間0 關本發明之前述及其他技術内容、特點與功效, ::呈下:合參考圖式之較佳實施例的詳細說明中,將可清; 參閱圖 件之方法, 1 ’本發明另提供一種用於製備一 包含下列之步驟·· 可調式微波元 (A)方、基板上形成一内金屬電極層; W稭由-網印法,於該内金屬電極層上形成一可調式微 波介電厚膜,該可調式微波介電厚膜含有 ^ ^ 6喇上述可調式 4波;丨电陶瓷組成物;以及 10 1267496 (C)分別於該可調式微波介電厚膜之上方及該基板之下方 形成-外金屬電極層,以製得該具有可調式微波介電 厚膜之可調式微波元件。 ^也。亥步驟(A)之内金屬電極層係藉由一網印法將 白金膠(ptpaste)塗佈於該基板上,並進行料而形成。 該步驟⑷之基板可視需要選擇適合之基板’而於本發 明之一具體例中,該步驟⑷之基板為多晶氧魅基板。 較佳地’該步驟(B)是由—步驟(B])、—步驟(Β·2)及一 步驟(Β姻構成。該步驟(叫是將該可調式微波介電陶兗 j物與-黏結劑予以混合’並製得—漿料,該步驟㈣' 疋错由-網印法將該漿料塗佈於該内金屬電極層之上方, ^製成一生坏’該步驟(B-3)是將該生坏進行燒結,以製得 一可调式微波介電厚膜。 較佳地’於該步驟(B _ 1)中, 八+ )中6亥铂、,、。劑與該可調式微波 ;1电陶_文組成物的用量比例為介於2:…:2之間。 該步驟(B-1)之黏結劑可為 ,,,,^ 1 j白知之適當黏結劑,較 仏地,该步驟(^)之黏結劑 俨孅給冬,u 剷加為帖烯酵(α-Terpinea】)與乙《 少兀緘維素(ethyl cellul〇se)之紐人· 1 . . 0 、、、σ,更侄地,該心萜烯醇與乙 烷緘維素的用量比例介於1:5至1:2〇之間。 較佳地,於該步驟⑹中 銀膠所製成。 卜五“極層係由高溫 此外,參閱圖2,本發明 雷里眩卩+ ^ &amp; 種具有一可調式微波介 屯厗胺3之可調式微波元件,係包含:一 基板1上方之内金屬電極層2、 “ 1 -位方。玄 曰 位於該内金屬電極層2上 1267496 分別位於該可調式微波 方之外金屬電極層4、5 含有上述可調式微波介 方之可調式微波介電厚膜3以及二 介電厚膜3之上方及該基板1之下 ’其中,該可調式微波介電厚膜3 電陶瓷組成物。 較佳地,該可調式微波元件更々八 人θ 匕S 一侧面金屬電極層6 ’该側面金屬電極層6係由該内金μ +化p 蜀电極層2之一側面向 下延伸至該基才反丨下方之該外金屬電 曰3之一側面。而 方;本發明之一具體例中,該側面 _ 層毛極層6係由高溫銀 膠所製成。 &lt;實施例1 &gt; L 可調式微波介電陶瓷組成物之製備 (a) 將64·68克之鈦酸鋇、3〇·97香夕私缺細Ώ ^ 〜兄之鈦酸鏍及4.35克之 二氧化欽予以混合,以製得一前趨物; (b) 再將5GG毫升之去離子水加人該前趨物中,以獲得 一懸浮液; (C)利用一衛星球磨法將該懸浮液予以充分混合及粉碎 ,而獲得一漿料; (d)將該漿料置入95°C的烘箱予以烘乾,並獲得一混合 物; (d-])將遠混合物以瑪瑙石绰研磨,然後過篩(#6〇);及 (e)隶後再置入一氧化紹掛禍,以1150。(2之溫度進行煆 燒’以獲得(BaG.6Sr〇.4)Ti〇3 : Ba4Ti】3〇3G重量比例為9 ·· 1之可調式微波介電陶瓷組成物,並進行XRD分 析,所獲得之結果如圖3所示。 ]2 1267496 η.可調式微波元件(如圖2所示)之製備 ()利用、罔印方式,將白金膠塗佈於-G.5冑米厚之 多晶氧化1呂基&amp;卜並以-加熱板加熱至 100〜150。(:且持續加熱1G分鐘,以於該基板^上形 成形成一内金屬電極層2,· (B-1)於 依據6 : 4之重量比例, 100〜150%之溫度下 將上述之可调式微波介電陶竟組成物與—黏結劑予 、_ &quot;亥‘、纟°劑是由乙烷纖維素與α-萜烯醇依據 1 · 10之重$比例進行混合而製得,最後獲得一 料; 7 ()藉ά ,罔印法,將該浆料塗佈於該内金屬電極層2 之上方,亚於10〇〜150〇C之溫度下進行、約1〇分鐘 之烘乾步驟,接著重複網印該漿料及烘乾步驟直至 塗佈於該内金屬電極層2上之該層達到所需厚度, 以製得一生坏; )將該生坏進行燒、结,首先以每分鐘5。(:加敎至 6〇〇°C,並持溫2小時,以進行去脂,再以每分鐘 2〇C加熱至13QG°C,並持溫4小時,最後以每分_ 5°C降至室溫’以於該内金屬電極層2上形成—可 調式微波介電厚膜3 ; (C) 將南溫銀膠分別塗佈於該可調式 微波介電厚膜 之 上方及4基板1之下方,並於 進行約10分鐘之烘乾步驟, 層4、5 ;以及 100〜150°C之溫度下 以形成二外金屬電極 13 1267496 (D) 之一側面向 ’以連接該 ’接著,於 將高溫銀膠塗佈於由該内金屬電極層2 下延伸至該外金屬電極層5之一側面上 内金屬電極層2與該外金屬電極層$ 100〜150。€之溫度下進行約1Q分鐘之M乾步驟,然 後再置入一去脂爐,以每分鐘5。匚升至,並 持續2小時,再以每分鐘5〇C升至85〇&lt;Dc,並持溫 1〇分鐘,最後以每分鐘5。(:降至室溫,而製得該可 调式微波元件。 &lt;實施例2 &gt; 除了將該步驟(a)之前趨物的重量比例予以變化為 63.77克之鈦酸鋇、27.53克之鈦酸鏍及8·7〇克之二氧化 欽’且所獲得之可調式微波介電陶瓷組成物中之 (Ba〇.6Sr〇.4)Ti03 : Ba4Ti1303〇 的重量比例為 8 : 2 之外,其 餘步驟與條件皆與實施例1相同,最後亦獲得一可調式微 波元件。 此外’亦將實施例2之可調式微波介電陶瓷組成物 進行分析,所得之結杲如圖3所示。 &lt;實施例3 &gt; 除了將該步驟(a)之前趨物的重量比例予以變化為 62.86克之鈦酸鋇、24.09克之鈦酸鋰及13.06克之二氧化 欽,且所獲得之可調式微波介電陶瓷組成物中之 (Ba〇 6Sr〇.4)Ti〇3 : Ba4Ti〗3〇3〇的重量比例為7 : 3之外,其 餘步驟與條件皆與實施例1相同,最後亦獲得一可調式微 波元件。 14 1267496 電陶瓷組成物 此外,亦將實施例3之可調式微波介 進行分析,所得之結果如圖3所示。 &lt;實施例4 &gt; 除了將該步驟⑷之前趨物的重量比例予以變化為 克之鈦酸鋇、17·2〇克之鈦酸锶及21 %克之二氧化 鈦,且所獲得之可調式微波介電陶瓷組成物中之 (Ba0.6Sr〇.4)Ti〇3 : Ba4Ti]3〇3〇 的重量比例為 5 : 5 之外,其 餘步驟與條件皆與實施例1相同,最後亦獲得-可調式微 波元件。 ^ …此外’亦將實施例4之可調式微波介電陶究組成物 違行分析,所得之結果如圖3所示。 &lt;結果&gt; 為瞭解忒可調式微波介電陶瓷組成物之特性,利用 一網路分析儀(netW0rk analyzer,美國安捷倫 司衣k,型唬為8722ES)以及一共振腔量測法(cavity meth〇d),量測由該等實施例1、3及4中之可調式微波介 包陶瓷組成物所製得之塊材,所得之結果如下表丨所示。 此外,為瞭解之重量與微波特性之關係, 亦將利用BaG.6Sr(MTi〇3i Ba4Tin〇3Q所製得之塊材之量 測結果列入下表1中,以進行比較。 15 1267496 實施例 (Ba〇.6Sr〇.4)Ti03 : Ba4Ti13〇30 介電常數 (K) 品質因子X頻率 (Qxf,GH7、 - 10:0 632 ---VJXlZ J 6? 1 9:1 313 yJ jl 1 0 1 0 3 7:3 13 7 k A ^ I u 4846 4 .5:5 ----——————__ 0 ·· 10 ------- 79 ziiTj 39 1 6000 由表 1 了知’ P返者Ba4Ti】3〇3G之重量的增 ^ ^ \J \J \J 加,介電常數 〜叫、^\八、以…,啲品質因子與頻率 之乘積亦隨著提昇(Qxf&gt;2_),因此,可證明該可調式微 波介電陶瓷組成物之特性可藉由改變Ba〇办4丁办及In one embodiment of the invention, the oxide of the record is titanic acid. Preferably, the titanium-containing oxide of the step (a) is titanium dioxide; in the method for preparing the adjustable microwave dielectric ceramic composition of the present invention, the step (a) The ratio of the amount of the oxide, the cerium-containing oxide, and the titanium-containing oxide is adjusted in accordance with the content ratio of χι〇3 and BagTinOw in the composition. Preferably, the amount of the oxide in the step (4) is in the range of from 60 to 65 wt% based on the age of all the reactants; the amount of the antimony-containing oxide is in the range of! Between 5 and 30, and the amount of the titanium-containing oxide is in the range of 5 to 25 wt%. The solvent used in the step (8) may be any suitable solvent. Preferably, the solvent of the step (b) is selected from the group consisting of: 1267496 ionized water, acetophenone, alcohol, 7, Sa, 4 kg of this, diphenyl, hexane, trichloroethanol, B, and combinations of these. The solvent of the step (8) is deionized water. &amp; In the present invention - in the specific example, the suspension of the step (C) is fully mixed with the unbranched and unbranched by any conventional machine, and in one of the present inventions e,, /, In the case of beans, the suspension of the step (C) is ground and mixed using a 1 star ball. The drying temperature of the step (d), the boiling of the solvent used in the step (b), and the adjustment of the solvent, and in the specific example of the present invention, the step (d) The drying/dishness is between 90 and 100 〇c. Alternatively, the present invention uses the above-mentioned adjustable microwave dielectric ceramics =:, and the method further comprises the step that the step (four) is to uniformly distribute the particle size distribution of the step and the finished material. Preferably, the calcination temperature of the step (4) is between the above-mentioned &quot;00 and the ooc. The foregoing and other technical contents, features and effects of the present invention are selected as follows: In the detailed description of the example, it will be clear; referring to the method of the drawing, 1 'the present invention further provides a method for preparing a method comprising the following steps: · Adjustable microwave element (A), forming an inner metal electrode layer on the substrate W straw-screen printing method, forming a tunable microwave dielectric thick film on the inner metal electrode layer, the adjustable microwave dielectric thick film containing the above-mentioned adjustable four-wave type; 丨 electric ceramic composition And 10 1267496 (C) respectively forming an outer metal electrode layer above the adjustable microwave dielectric thick film and under the substrate to obtain the adjustable microwave component with the adjustable microwave dielectric thick film. ^ Also. The metal electrode layer in the step (A) is formed by applying a ptpaste to the substrate by a screen printing method and forming a material. In the substrate of the step (4), a suitable substrate can be selected as needed. In a specific example of the present invention, the substrate of the step (4) is a polycrystalline oxygen substrate. Preferably, the step (B) is composed of - step (B)), - step (Β·2), and a step (constitution of the marriage. This step is called the adjustable microwave dielectric ceramics - the binder is mixed 'and prepared - the slurry, the step (4)' is applied to the upper surface of the inner metal electrode layer by the screen printing method, and the resulting step is formed. Is to sinter the raw material to obtain a tunable microwave dielectric thick film. Preferably, 'in this step (B _1), eight +) in the 6 hp, , and the agent Modulated microwave; 1 pottery _ composition of the amount of the ratio between 2: ...: 2. The binder of this step (B-1) can be,,,, ^ 1 j Bai Zhizhi appropriate adhesive, compared In the meantime, the binder of this step (^) is given to winter, the shovel is added as the alpha-Terpinea, and the second is the newcomer of ethyl cellul〇se. 0, , σ, more specifically, the ratio of the content of the heart decyl alcohol to the ethane acesulfame is between 1:5 and 1:2 。. Preferably, the silver glue is prepared in the step (6).卜五"The polar layer is made of high temperature. In addition, refer to Figure 2, the invention of Reli卩+ ^ &amp; an adjustable microwave component having a tunable microwave mesogen 3, comprising: a metal electrode layer 2 above the substrate 1, "1 - square". The sinus is located in the inner metal electrode layer 2 1267496 is located outside the adjustable microwave side, and the metal electrode layer 4, 5 includes the adjustable microwave dielectric thick film 3 and the upper dielectric thick film 3 above the substrate 1 and below the substrate 1 Wherein, the adjustable microwave dielectric thick film 3 electric ceramic composition. Preferably, the adjustable microwave component is further octagonal θ 匕 S one side metal electrode layer 6 'the side metal electrode layer 6 is composed of the inner gold μ One side of the p-electrode layer 2 extends downwardly to one side of the outer metal electrode 3 below the substrate. However, in one embodiment of the invention, the side-layer layer 6 is made of high-temperature silver glue. <Example 1> L Preparation of adjustable microwave dielectric ceramic composition (a) 64.68 g of barium titanate, 3〇·97 fragrance ^ ~ Brother's barium titanate and 4.35 grams of dioxins are mixed to make a precursor; (b) 5G G ml of deionized water is added to the precursor to obtain a suspension; (C) the suspension is thoroughly mixed and pulverized by a satellite ball milling method to obtain a slurry; (d) the slurry The material is placed in an oven at 95 ° C and dried to obtain a mixture; (d-)) the far mixture is ground with agate stone mortar, then sieved (#6〇); and (e) placed one after the other Oxidation and stagnation, with 1150. (2 at the temperature of simmering to obtain (BaG.6Sr 〇.4) Ti 〇 3 : Ba4Ti] 3 〇 3G weight ratio of 9 · · 1 adjustable microwave dielectric ceramic composition And XRD analysis, the results obtained are shown in Figure 3. ] 2 1267496 η. Preparation of adjustable microwave components (shown in Figure 2) () using the method of printing, printing platinum glue on -G.5 胄m thick polycrystalline oxidized 1 基 && Heated to -100~150 with a heating plate. (: and continuously heating for 1G minutes, so as to form an inner metal electrode layer 2 on the substrate ^, (B-1) according to the weight ratio of 6: 4, 100~150% of the above-mentioned adjustable Microwave dielectric ceramic composition and bonding agent, _ &quot; Hai', 纟 ° agent is prepared by mixing ethane cellulose and α-nonenol according to the weight ratio of 1 · 10, and finally obtained First, 7 () by means of ά, 罔 printing method, the slurry is coated on the inner metal electrode layer 2, at a temperature of 10 〇 150 150 ° C, drying step of about 1 〇 minutes And then repeating the printing of the slurry and the drying step until the layer coated on the inner metal electrode layer 2 reaches a desired thickness to produce a raw and bad; the raw and the bad are burned and knotted, firstly each Minute 5. (: Add to 6 ° ° C, and hold the temperature for 2 hours to degrease, then heat to 13QG ° C at 2 ° C per minute, hold the temperature for 4 hours, and finally drop _ 5 ° C per minute To the room temperature 'to form the adjustable metal dielectric thick film 3 on the inner metal electrode layer 2; (C) apply the south temperature silver glue to the upper of the adjustable microwave dielectric thick film and the 4 substrate 1 Below, and performing a drying step of about 10 minutes, layers 4, 5; and a temperature of 100 to 150 ° C to form one of the outer metal electrodes 13 1267496 (D) side to 'to connect the', then Applying a high-temperature silver paste to the inner metal electrode layer 2 and the outer metal electrode layer $100 to 150 extending from the inner metal electrode layer 2 to one side of the outer metal electrode layer 5. 1Q minutes of M dry steps, then put into a degreaser, to 5 per minute, soar to 2 hours, then 5 liters per minute to 85 〇 &lt; Dc, and hold 1 持Minutes, and finally at 5 minutes per minute (: to room temperature, the adjustable microwave element is produced. &lt;Example 2 &gt; In addition to the weight ratio of the precursor before the step (a) It is changed to 63.77 g of barium titanate, 27.53 g of barium titanate and 8·7 g of dioxin and obtained in a tunable microwave dielectric ceramic composition (Ba〇.6Sr〇.4) Ti03 : Ba4Ti1303 The weight ratio of ruthenium is 8:2, and the other steps and conditions are the same as those of Embodiment 1. Finally, an adjustable microwave component is obtained. In addition, the tunable microwave dielectric ceramic composition of Example 2 is also analyzed. The resulting crucible is shown in Fig. 3. &lt;Example 3 &gt; In addition to the weight ratio of the precursor before the step (a), 62.86 g of barium titanate, 24.09 g of lithium titanate, and 13.06 g of dioxin were changed. And the weight ratio of (Ba〇6Sr〇.4)Ti〇3 : Ba4Ti〗 3〇3〇 in the tunable microwave dielectric ceramic composition obtained is 7:3, and the remaining steps and conditions are implemented In the same manner as in Example 1, a tunable microwave component was finally obtained. 14 1267496 Electric Ceramic Composition In addition, the tunable microwave dielectric of Example 3 was also analyzed, and the results obtained are shown in Fig. 3. &lt;Example 4 &gt; In addition to the weight ratio of the precursor before the step (4) The change is gram of barium titanate, 17.2 grams of barium titanate and 21% of titanium dioxide, and the obtained microwave dielectric ceramic composition (Ba0.6Sr〇.4) Ti〇3 : Ba4Ti] The weight ratio of 3〇3〇 is 5:5, and the other steps and conditions are the same as those in Embodiment 1. Finally, the -tunable microwave component is also obtained. ^...In addition, the adjustable microwave dielectric ceramic of Embodiment 4 is also used. The composition was analyzed by violation, and the results obtained are shown in Figure 3. &lt;Results&gt; To understand the characteristics of the 忒-tunable microwave dielectric ceramic composition, a network analyzer (netW0rk analyzer, Agilent, USA, 8722ES) and a cavity meth method (cavity meth) were used. 〇d), the bulk materials prepared from the tunable microwave-intervening ceramic compositions of Examples 1, 3 and 4 were measured, and the results obtained are shown in the following table. In addition, in order to understand the relationship between the weight and the microwave characteristics, the measurement results of the block made of BaG.6Sr (MTi〇3i Ba4Tin〇3Q) are also listed in Table 1 for comparison. 15 1267496 Example (Ba〇.6Sr〇.4) Ti03 : Ba4Ti13〇30 Dielectric constant (K) Quality factor X frequency (Qxf, GH7, -10:0 632 ---VJXlZ J 6? 1 9:1 313 yJ jl 1 0 1 0 3 7:3 13 7 k A ^ I u 4846 4 .5:5 ----——————__ 0 ·· 10 ------- 79 ziiTj 39 1 6000 by Table 1 Knowing that 'P returner Ba4Ti】3〇3G weight increase ^ ^ \J \J \J plus, dielectric constant ~ call, ^ \ eight, to..., the product of the quality factor and frequency also increases with (Qxf> ; 2_), therefore, it can be proved that the characteristics of the tunable microwave dielectric ceramic composition can be changed by

Ba4Ti13〇3G之重量比例進行調整,且亦可依據該可調式微波 兀件之需求加以變化及調整。 、不上所述’本發明之可調式微波介電陶瓷組成物是由The weight ratio of Ba4Ti13〇3G is adjusted and can be varied and adjusted according to the requirements of the adjustable microwave device. The above-mentioned adjustable microwave dielectric ceramic composition is composed of

Ba0.6Sr0.4Ti〇3 及 Ti 〇 、 所構成,其之重量比例可依據最 、’、產口 口之需求進行變化及含周敕 m 、又匕及凋正。本發明之用於製備可調式 一 t方法則疋利用-網印法進行塗佈,而最後製得 2有一可調式微波介電厚膜之可調式微波元件,且該可 含有上述可調式微波介電陶究組成物,並兼 具可调性及微波特性。 淮以上所述者,僅為本 — 处”丨月之較佳貫施例而已,當不 此以此限定本發明實施之 w 田不 銘FI Bn 口 即大凡依本發明申請專利 章巳圍及發明說明内容所作 &amp; 月寻扪 Μ±^ΒΒ 間早的夺效變化與修飾,皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 16 1267496 圖1是一流程圖,說明本發明之用於製備一可調式微 波元件之方法的一較佳實施例; 圖2是一示意圖,說明本發明之可調式微波元件之一 較佳實施例的結構;以及 圖3是一 X射線繞射分析圖,說明本發明之實施例1 至4之可調式微波介電陶瓷組成物之成分分析。 17 1267496 【主要元件符號說明】 1……基板 4…‘外金屬電極層 2……内金屬電極層 5…·…外金屬電極層 3 “…可調式微波介電厚膜 6……側面金屬電極層 18Ba0.6Sr0.4Ti〇3 and Ti 〇 are formed, and the weight ratio thereof can be changed according to the needs of the most, and the mouth of the mouth, and the circumference, m, and enthalpy. The method for preparing a tunable one of the present invention is coated by a screen printing method, and finally a tunable microwave component having an adjustable microwave dielectric thick film is obtained, and the tunable microwave dielectric can be contained. The electric ceramics composition has both adjustability and microwave characteristics. The above-mentioned ones are only for the best example of this month, and this is not to limit the implementation of the present invention. SUMMARY OF THE INVENTION The early changes and modifications made by the &amp; month search are still within the scope of the present patent. [Simplified illustration] 16 1267496 FIG. 1 is a flow chart illustrating the present invention. A preferred embodiment of the method for preparing a tunable microwave component of the invention; FIG. 2 is a schematic view showing the structure of a preferred embodiment of the tunable microwave component of the present invention; and FIG. 3 is an X-ray winding The composition analysis of the composition of the tunable microwave dielectric ceramics of Examples 1 to 4 of the present invention is shown. 17 1267496 [Description of main component symbols] 1...substrate 4...'outer metal electrode layer 2...internal metal Electrode layer 5...·...outer metal electrode layer 3"...adjustable microwave dielectric thick film 6...side metal electrode layer 18

Claims (1)

-η /49Q 十、申請專利^圍: 2 备由上“ ”肀,0&lt; x&lt; j。 •申%專利範圍第〗JS ^ ' 1中,;R c 員之可調式微波介電陶瓷组成I T Baxsri_xTi〇3 及 u 成物, 至1 : 1之間。 4 1丨3〇30之含量比例為介於9 : J 3 · —種用於费供— 波介電陶莞組二==1項所述之可調式微 万法,包含下列步驟·· 字一含鋇之氧化% 气儿 化物、一含鎇之氧化物及一含钍— 虱化物予以混合,制 、, 、太之 A、 y 以衣侍一 W驅物; (b)將一溶劍加入# ⑷將^ W驅物中1獲得—懸浮液; I J將°玄浮液予π 4八r广 ; 4子,以獲得一混合均句之漿料 ⑷於-預定溫度下’將該㈣予以供 混合物;以及 ^件— ⑷於—預定溫度下,令該混合物進行煆燒,以— 该可調式微波介電陶究組成物。 又件 4·如申請專利範圍第3項 ^ ^ ^ 、方;衣備一如申請專利範圍第 1項所述之可調式微波介電陶兗組成物之方法,复中 該步驟⑷之該含鎖之氧化物係選自於由下列所構成 群:鈦酸鋇、碳酸鋇及氧化鋇。 矢 5.如申請專利範圍第3項之用於製備一如申請專 &quot;員所述之可調式微波介電陶I组成物之方法,其中, 該步驟⑷之該含錄之氧化物係選自於由下列所構成之族 19 1267496 f ••鈦酸鋇、碳酸鎇及氧化鋇。 6·如申請專利範圍第3項之用於製備一如申請專 項所述之可調式微波介電陶I組成物之方:弟 7 f步驟⑷之該含鈦之氧化物係為:氧化鈦。、中, •如申請專利範圍第3項之用於製備―如㈣專 1項所述之可調式外、由八 執圍弟 U波;丨琶陶瓷組成物之方法,龙 ::所有反應物之總重,該步驟⑷之含鋇 物, 1耗圍係介於6〇至65wt%之間。 匕物的用 •如申請專利範圍第3項 1頂所、f,、、用方;衣備一如申請專利範圍第 :Μ可旧式微波介電㈣組成物之方法,其 :方'所有反應物之總重,該步驟之 9 量範圍係介於15至30糾%之間。 &amp;化物的用 .如申請專利範圍第3項之用於製備—如中請專利 1項所述之可調式微波介電陶究組成物之方法, 基於所有反應物之總重’該步驟⑷之含鈦之氧化物中, 量範圍係介於5至25wt%之間。 ^化物的用 士申。月專利軌圍第3項之用於製備—如申 1項所述之可調式微波介電陶究組成物之方法,=第 ^之溶劑係選自於由下列所構成之族群:=子 水、甲乙酮、酒精、甲苯、二甲苯、己炫、:氣tr 乙醇,以及該等之組合。 一虱乙醇、 u·如申請專利範圍第10項之用於製備 1項所述之可調式微波介㈣組成物之;=第 該步驟⑻之溶劑係為去離子水。 ”中’ 20 1267496 1 2.如申請專利範(f|楚:!话+ m 摩巳圍弟3項之用於製備一如申請專利 1項所述之可調式微波介命 叭値反;1兔陶究組成物之方法,爱由, 該步驟⑷之埃乾溫度係、介於9〇WCq。 1 3 ·如申請專利範圍第3項 制 1頊所诚. 申請專利範圍第 ' 17调式微波介電陶瓷組成物之方法,更包含 該娜υ是將該步驟(_ 篩,以使該―的粒 14·如申請專利範圍第3項之一 ^ ^ ^ 衣侑如申凊專利範圍第 項所述之可調式微波介電陶变組成物之方法,其中, 该步驟(e)之煆燒溫度係介於9〇〇與115〇。匸之門。 驟. (Α)於一基板上形成一内金屬電極層,· (B) 藉由一網印法,於該内全眉#代昆 / Μ孟屬兒極層上形成一可調 式微波介電厚膜,該可調式微波介電厚膜含有一 如申請專利範圍第丨項所述之 &lt; ^。周式微波介電陶 瓷組成物;以及 (C) 分別於該可調式微波介電厚膜 、 〜丄万及该基板之 下方形成一外金屬電極層,以制彡曰外 Λ衣传该可調式微波 元件。 16·如申請專利範圍第15項之用於製備_ ^ 可调式微波元件之 方法,其中,該步驟⑷之内金屬電極層係藉由一網印法 將白金膠塗佈於該基板上,並進行供乾而米成 21 1267496 17.如申請專利範圍第15項之用於製備_ 方法,JL Φ »匕 巧式微波元件夕 其中,該步驟(B)是由一步驟(Β·η、一 之 及一步驟(Β·3)所構成,該步驟(Β])是將士步騎泰2) 電陶变組成物與一黏結劑予以混合,、、:曰调式被波介 步驟(Β-2)是藉由一網印法將該激料塗:二-漿料,該 層之上方,而fέ亥内金屬電極 叩衣成生坏,该步驟(5 燒結,以製得-可調式微波介電厚膜。&amp; : 5亥生坏進行 I8·如申請專利範圍第17項之用 方法’其中,於該步驟(B-D中:式微波元件之 波介電陶究組成物的用量比例為::;。刻與該可調式微 。 2· 1至1:2之間 19·如申請專利範圍第18項之用於 方法,其中,該步驟(―二:調ί微波元件之 纖維素之組合。 '、α帖烯醇與乙烷 20·如申請專利範圍第19項之用於製備— … 方法’其中,於該步驟(Β_υ中,該^稀:波凡件之 素之用量比例介於i : 5至i : I子14乙烷纖維 2 1 κ . &lt; Γ曰1 〇 .°申請專利範圍第15項之用於製備一 — 方法,其中,於該步驟(C)中,該屬=波兀件之 溫銀膠所製成。 玉屬毛極層係由高 22·-種具有一可調式微波介電 含: 了凋式微波元件,包 一基板; 一位於該基板上方之内金屬電極層 22 Ϊ267496 八彳双砹介電厚 、&quot;可調式微波介電厚膜含有—如t請專利範圍第1 項所述之可調式微波介電陶莞組成物;以及 广外金屬電極層,係分別位於該可調式植t波介杂 厚膜之上方及該基板之下方。 电 23·如中請專利範圍第22項之具有—可調式微波介電厚膜之 可調式微波元件,其中,該内金屬電極層係藉由:: 法將白金膠塗佈於該基板上,並進行烘乾而形成。, 2(如申請專利範圍第22項之具有一可調式微波介電厚膜 可調式微波元件,其中,該等外金屬電極層:、: 膠所製成。 阿, 里銀 25·如申請專利範圍第22項之具有—可調式微波介電 式微波元件’更包含一側面金屬電極層,該側面: *電極層係由該内金屬電極層之—側面向下延伸至节美 板下方之該外金屬電極層之一側面。 土 26.如申請專利範圍第25項之具有一可調式微波介電厚膜 可調式微波元件’其中,該側面金屬電極:之 膠所製成。 τ由网溫銀 23-η /49Q X. Apply for a patent ^Weighing: 2 Prepare by " 肀", 0 &lt;x&lt; j. • Shen% patent scope 〖JS ^ '1; Rc member's adjustable microwave dielectric ceramic composition I T Baxsri_xTi〇3 and u, between 1:1. The ratio of 4 1丨3〇30 is between 9: J 3 · the kind of adjustable micro-method described in the fee supply-wave dielectric group 2 ==1, including the following steps·· A cerium oxide containing cerium oxide, an oxide containing cerium and a cerium-containing cerium compound are mixed, made, and, too, A, y is served as a W drive; (b) will dissolve a sword Add # (4) to obtain a suspension in the W-driver; IJ to ° ° Xuan floating liquid to π 4 八r wide; 4 sub-to obtain a mixed average slurry (4) at - the predetermined temperature 'the (four) The mixture is supplied; and the components are- (4) at a predetermined temperature, the mixture is subjected to calcination to - the tunable microwave dielectric ceramic composition. Further, if the application of the patent scope is the third item ^ ^ ^, square; clothing preparation as claimed in the patent scope of the first item of the method of the microwave dielectric ceramic composition, the above step (4) The oxide of the lock is selected from the group consisting of barium titanate, barium carbonate, and barium oxide. A method for preparing a tunable microwave dielectric ceramic composition as described in claim 3, wherein the oxide of the step (4) is selected as described in claim 3 From the group consisting of the following 19 1267496 f •• barium titanate, barium carbonate and barium oxide. 6. The method for preparing a tunable microwave dielectric ceramic composition as described in the application of claim 3, wherein the titanium-containing oxide of the step (4) is titanium oxide. , in the middle of the patent application, in the third paragraph of the patent application, for the preparation of the "adjustable type" as described in item (4), the method of the composition of the ceramics, the dragon: all the reactants The total weight, the mash containing the step (4), the 1 consumption is between 6 〇 and 65 wt%. Use of stolen goods • For example, the third paragraph of the patent application scope, the top, the f, and the use; the clothing is as the patent scope: the old microwave dielectric (four) composition method, which: square 'all reactions The total weight of the object, the range of 9 of this step is between 15 and 30%. For the preparation of the compound of the invention, as described in claim 3, the method for preparing the tunable microwave dielectric ceramic composition according to the patent item 1, based on the total weight of all the reactants, the step (4) In the titanium-containing oxide, the amount ranges from 5 to 25 wt%. ^Use of the compound. The method of the third aspect of the patent is used for the preparation of the tunable microwave dielectric ceramic composition according to claim 1, wherein the solvent is selected from the group consisting of: sub water , methyl ethyl ketone, alcohol, toluene, xylene, hexazone, gas tr ethanol, and combinations of these. Ethanol, u. For the preparation of the tunable microwave dielectric (IV) composition of claim 1, wherein the solvent of the step (8) is deionized water. "中中" 20 1267496 1 2. If you apply for a patent (f|Chu:! words + m), you can use it to prepare a tunable microwave device as described in Patent Application 1; The method of rabbit ceramics composition, love by, the step (4) of the Eggen temperature system, between 9 〇 WCq. 1 3 · If the patent application scope 3 system 1 顼 诚. Patent application scope '17-mode microwave The method of dielectric ceramic composition, further comprising the step of υ ( 筛 以 以 以 以 以 14 14 · · · · · · 14 14 14 14 14 14 14 14 14 14 ^ ^ ^ ^ The method for adjusting the microwave dielectric composition of the microwave, wherein the temperature of the calcination in the step (e) is between 9〇〇 and 115〇. The gate of the crucible. The crucible is formed on a substrate. An inner metal electrode layer, (B) by means of a screen printing method, an adjustable microwave dielectric thick film is formed on the inner layer of the inner eyebrow #代昆/Μ孟属, the adjustable microwave dielectric thickness The film contains a &lt; ^. week type microwave dielectric ceramic composition as described in the scope of the patent application; and (C) respectively The microwave dielectric thick film, 〜 10,000 and an underlying metal electrode layer are formed under the substrate, and the tunable microwave component is transferred to the outer casing. 16 · For the preparation of the scope of claim 15 The method of the tunable microwave component, wherein the metal electrode layer in the step (4) is coated on the substrate by a screen printing method, and is supplied to the substrate to be dried. 21 1267496 17. 15 items for preparation _ method, JL Φ » 微波 式 微波 微波 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中Β]) is to mix the stone stepping compound 2) the electric ceramic composition with a bonding agent, and: the 曰-adjusted wave-passing step (Β-2) is to apply the stimuli by a screen printing method: The slurry, above the layer, and the metal electrode in the fέhai is ruined, this step (5 sintering, to obtain - adjustable microwave dielectric thick film. &amp; : 5 Haisheng bad I8 · as applied The method of the 17th patent range] wherein, in this step (BD: the wave dielectric ceramics of the microwave component) The ratio of the amount of the product is::; engraved with the adjustable micro. Between 1 and 1:2 19. The method for applying the scope of claim 18, wherein the step ("two: adjust" a combination of cellulose of a microwave component. ', α-enol and ethane 20 · For the preparation of the method of claim 19 - Method ', wherein in this step (Β υ, the ^ 稀: 波凡件The ratio of the amount of the substance is between i: 5 to i: I sub- 14 ethane fiber 2 1 κ . &lt; Γ曰 1 〇. ° Patent Application No. 15 for the preparation of a method, wherein, in this step In (C), the genus is made of warm silver glue. The jade hair layer is composed of a high-enhanced microwave dielectric containing: a microwave-type component, including a substrate; a metal electrode layer 22 Ϊ 267496 located above the substrate; , &quot;Adjustable microwave dielectric thick film contains - such as the adjustable microwave dielectric pottery composition described in item 1 of the patent scope; and the outer metal electrode layer, which are respectively located in the adjustable t-wave dielectric Above the thick film and below the substrate. An adjustable microwave component having a tunable microwave dielectric thick film according to the 22nd aspect of the patent, wherein the inner metal electrode layer is coated on the substrate by a method: And formed by drying. 2, as claimed in claim 22, has a tunable microwave dielectric thick film adjustable microwave component, wherein the outer metal electrode layer::: glue is made. A, Li Yin 25·such as applying for a patent The tunable microwave dielectric microwave component of the scope 22 further includes a side metal electrode layer, the side surface: the electrode layer is extended from the side of the inner metal electrode layer to the lower portion of the slab One side of the outer metal electrode layer. Soil 26. As claimed in claim 25, there is an adjustable microwave dielectric thick film adjustable microwave element, wherein the side metal electrode: the glue is made. Silver 23
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