TWI267210B - Matrix light emitting diode and fabricating method thereof - Google Patents

Matrix light emitting diode and fabricating method thereof

Info

Publication number
TWI267210B
TWI267210B TW94120619A TW94120619A TWI267210B TW I267210 B TWI267210 B TW I267210B TW 94120619 A TW94120619 A TW 94120619A TW 94120619 A TW94120619 A TW 94120619A TW I267210 B TWI267210 B TW I267210B
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting diode
positive
circuit layer
negative electrodes
Prior art date
Application number
TW94120619A
Other languages
Chinese (zh)
Other versions
TW200701502A (en
Inventor
Yen-Cheng Chen
Ching-Lin Tseng
Yun-Tao Kuo
Ming-Li Chang
Original Assignee
Bright Led Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bright Led Electronics Corp filed Critical Bright Led Electronics Corp
Priority to TW94120619A priority Critical patent/TWI267210B/en
Application granted granted Critical
Publication of TWI267210B publication Critical patent/TWI267210B/en
Publication of TW200701502A publication Critical patent/TW200701502A/en

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Abstract

A matrix light emitting diode and fabricating method thereof are provided. The matrix light emitting diode comprises a substrate, a circuit layer, a reflection cap, a plurality of light emitting chips, at least a positive/negative pins and a lens module. In the invented method of manufacturing matrix type light emitting diode, a substrate is first provided. After that, the circuit layer with positive/negative electrodes is set on the substrate. The reflection cap with a plurality of openings arranged in a matrix manner is disposed on the circuit layer. Each light emitting diode chip is set on each opening. The positive/negative electrodes of light emitting chip are electrically connected to the positive/negative electrodes of the circuit layer. Then, positive/negative pins are set on the baseboard and electrically connected to positive/negative electrodes of the circuit layer. Finally, the lens module is set on the reflection cap and the light emitting chip is sealed.
TW94120619A 2005-06-21 2005-06-21 Matrix light emitting diode and fabricating method thereof TWI267210B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94120619A TWI267210B (en) 2005-06-21 2005-06-21 Matrix light emitting diode and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94120619A TWI267210B (en) 2005-06-21 2005-06-21 Matrix light emitting diode and fabricating method thereof

Publications (2)

Publication Number Publication Date
TWI267210B true TWI267210B (en) 2006-11-21
TW200701502A TW200701502A (en) 2007-01-01

Family

ID=38191785

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94120619A TWI267210B (en) 2005-06-21 2005-06-21 Matrix light emitting diode and fabricating method thereof

Country Status (1)

Country Link
TW (1) TWI267210B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459605B (en) * 2012-02-14 2014-11-01 Leadray Energy Co Ltd A light emitting diode module with high heat dissipation efficiency

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459605B (en) * 2012-02-14 2014-11-01 Leadray Energy Co Ltd A light emitting diode module with high heat dissipation efficiency

Also Published As

Publication number Publication date
TW200701502A (en) 2007-01-01

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