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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW91103695ApriorityCriticalpatent/TWI266366B/en
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Publication of TWI266366BpublicationCriticalpatent/TWI266366B/en
A copper layer is positioned on a semiconductor wafer. A first chemical solution is used to clean a surface of the copper layer. Following this, a second chemical solution is used to perform a chemical mechanical polish to remove portions of the copper layer and make the remaining copper layer have a planar surface.
TW91103695A2002-02-272002-02-27Method of improving non-uniformity of chemical mechanical polish
TWI266366B
(en)