TWI266312B - Temperature-dependent dram self-refresh circuit - Google Patents

Temperature-dependent dram self-refresh circuit

Info

Publication number
TWI266312B
TWI266312B TW93137737A TW93137737A TWI266312B TW I266312 B TWI266312 B TW I266312B TW 93137737 A TW93137737 A TW 93137737A TW 93137737 A TW93137737 A TW 93137737A TW I266312 B TWI266312 B TW I266312B
Authority
TW
Taiwan
Prior art keywords
temperature
dependent
self refresh
refresh circuit
circuit
Prior art date
Application number
TW93137737A
Other languages
Chinese (zh)
Other versions
TW200620287A (en
Inventor
Chien-Yi Chang
Original Assignee
Elite Semiconductor Esmt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elite Semiconductor Esmt filed Critical Elite Semiconductor Esmt
Priority to TW93137737A priority Critical patent/TWI266312B/en
Publication of TW200620287A publication Critical patent/TW200620287A/en
Application granted granted Critical
Publication of TWI266312B publication Critical patent/TWI266312B/en

Links

Abstract

A device comprising a temperature-dependent self refresh circuit for a memory device is provided where the self refresh circuit includes: a temperature sensor circuit for providing an output that reflects an operation temperature; means for switching the temperature sensor circuit to a low power state during a self refresh operation; an encoder for encoding temperature data from said output; and a programmable oscillator responsive to the encoded data to provide a temperature-dependent refresh signal for the self refresh operation.
TW93137737A 2004-12-07 2004-12-07 Temperature-dependent dram self-refresh circuit TWI266312B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93137737A TWI266312B (en) 2004-12-07 2004-12-07 Temperature-dependent dram self-refresh circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93137737A TWI266312B (en) 2004-12-07 2004-12-07 Temperature-dependent dram self-refresh circuit

Publications (2)

Publication Number Publication Date
TW200620287A TW200620287A (en) 2006-06-16
TWI266312B true TWI266312B (en) 2006-11-11

Family

ID=38191550

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93137737A TWI266312B (en) 2004-12-07 2004-12-07 Temperature-dependent dram self-refresh circuit

Country Status (1)

Country Link
TW (1) TWI266312B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10497423B1 (en) * 2018-05-14 2019-12-03 Nanya Technology Corporation Frequency-adjusting circuit, electronic memory, and method for determining a refresh frequency for a plurality of dram chips
TWI690697B (en) * 2019-01-29 2020-04-11 華邦電子股份有限公司 Temperature sensor evaluation method
US10878881B1 (en) * 2019-11-26 2020-12-29 Nanya Technology Corporation Memory apparatus and refresh method thereof
CN113470709B (en) * 2020-03-31 2024-04-12 华邦电子股份有限公司 Temperature sensing circuit and sensing method thereof
US11536613B2 (en) 2020-04-01 2022-12-27 Winbond Electronics Corp. Temperature sensing circuit and sensing method thereof

Also Published As

Publication number Publication date
TW200620287A (en) 2006-06-16

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