TWI264745B - Solid electrolytic capacitor - Google Patents

Solid electrolytic capacitor Download PDF

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Publication number
TWI264745B
TWI264745B TW91111736A TW91111736A TWI264745B TW I264745 B TWI264745 B TW I264745B TW 91111736 A TW91111736 A TW 91111736A TW 91111736 A TW91111736 A TW 91111736A TW I264745 B TWI264745 B TW I264745B
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TW
Taiwan
Prior art keywords
foil
electrolytic capacitor
solid electrolytic
solid
porosity
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TW91111736A
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Chinese (zh)
Inventor
Kazuhiro Higuchi
Akihiro Inoue
Akio Ishii
Kazuhiro Saegusa
Kazuhiro Hatanaka
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Nippon Chemicon
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Priority claimed from JP2001165940A external-priority patent/JP2002359159A/en
Priority claimed from JP2001244630A external-priority patent/JP4300722B2/en
Priority claimed from JP2001244529A external-priority patent/JP2003059776A/en
Application filed by Nippon Chemicon filed Critical Nippon Chemicon
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Publication of TWI264745B publication Critical patent/TWI264745B/en

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Abstract

To provide a solid electrolytic capacitor having a low ESR characteristic. The capacitor uses a capacitor element of the formed solid electrolyte, an anode foil for use in a capacitor element is set for a porosity of 51% or less after etching, and a cathode foil therefor is set for a porosity of 44% or less after etching. Thus, the conducting part of the electrode foil can be amplified, the resistance part of the electrode foil can be lowered, and a solid electrolytic capacitor having a low ESR characteristic is obtained.

Description

1264745 __87 五、發明説明(1 ) 發明所屬的技術領域 本發明係有關採用以固體電解質爲電解質之固體電解 電容器。 習知技術 近年’電子資訊機器之數位化,再者此等電子資訊機 器之心臟部的微處理器(Μ P U )之驅動頻率的高速化正 進行著。伴隨此,消耗電功之增大化之進展,放熱引起的 可靠性之問題亦突顯出來,因此乃有試圖降低驅動電壓之 對策。在此’供給高精密度的電力至微處理器內之電路, 被稱作電壓控制模組(V R Μ )之D C - D C轉換器乃被 廣泛使用著,於其輸出側電容器爲防止電壓下降,則有串 聯等價電阻(E S R )被多數使用。至於具有此低E S R 特性之電容器,以固體電解質爲電解質使用的固體電解電 容器正被實用化,以符合此等用途之電容器被廣泛採用。 然而’微處理器之驅動頻率顯著高速化,伴隨此現象 使消耗電力增加,爲對應於該現象,來自爲防止電壓下降 而自電容器之供給電力的增大化乃被要求。亦即必須以短 時間供給較大的電力,因此對前述的固體電解電容器被要 求大容量化、小型化、低電壓化,同時亦較至目前爲止更 低的E S R特性。 在此’就固體電解電容器予以說明,則對鉅或鈮等閥 作用金屬箔施以蝕刻並擴大表面積之後,於已形成於陽極 氧化被膜之陽極箱及銘、鉅或銳等的閥作用金屬范施以會虫 本^張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐"Τ' " - 4 - (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 經濟部智慧財產局員工>^t合作社印髮 經濟部智慧財產局員工消費合作社印製 1264745 A7 B7 _ 五、發明説明(2 ) 刻並形成陰極箔。於此陽極箔及陰極箔之間夾雜以由牛皮 紙,聚酯(Mylar )合成紙、玻璃纖維間隔件或維尼龍 、聚酯纖維等的合成纖維而成之非織物等的間隔件,於前 述陽極箔及前述陰極箱之任何位置上各自安裝陽極拉出.端 子及陰極拉出端子的狀態捲取,並形成電容器元件。於此 電容器元件上形成固體電解質,收容於金屬盒內,用由環 氧樹脂等而成的封口樹脂密閉金屬盒開口部或插入封口橡 膠,藉由鎖聚加工予以密閉而成者。 由上述構成的固體電解電容器,在用作電解質,與習 知的電阻係數爲1 Ο Ο Ω - c m級(order )之電解液相 比,係採用具有1 0數Ω - c m以下的具有低電阻係數之 固體電解質,故如前述,係E S R特性優越的電容器。 然而,至於此固體電解質,長久以來採用電阻係數數 Ω - c m之二氧化錳,其後雖有採用電阻係數爲1 Ω · c m以下的T C N Q錯合物、聚吡咯、噻吩電介質之聚合 物之固體電解電容器被實用化,惟在Μ P U之驅動頻率之 再高速化進展中,有再更小型、大容量且有再低的E S R 電容器被要求。若依本發明人等的硏究時,則在如此的固 體電解電容器,電解質之電阻係數儘管較低,但電容器 E S R降低的效果並不足夠。 發明欲解決的課題 如上述,僅以固體電解質之低電阻化的改善,欲降低 電容器之E S R有其界限。再者E S R之降低有難以達成 本纸張尺度適用中國國家標隼(CNS ) Α4規格(210Χ 297公楚) 卜__I____ί______丁______ (請先閱讀背面之注意事項再填寫本頁) 1264745 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明説明() 的問題存在。 本發明係爲解決上述問題而完成者,提供於採用電阻 係數較低的固體電解質之固體電解電容器,再者實現低 ESR之固體電解電容器者。 解決課題而採的手段 爲解決上述課題,發明人經精心檢討的結果,藉由謀 求電容器元件之電解箔所用的蝕刻箔之空孔率之最適化, 發現可降低電容器元件之電解箔所具的固有電阻値,使固 體電解電容器之E S R更進一步降低爲可行。 亦即,於電容器元件上形成固體電解質而成的固體電 解電容器,前述電容器元件之陽極箔所用的蝕刻箔,採用 空孔率在5 1 %以下的鈾刻箔。將此蝕刻箔予以生成( forming ),亦即予以陽極氧化可得本發明之陽極范。如 此將蝕刻箔之空孔率設成5 1 %以下’可增大陽極箔之導 電部分並降低陽極箔之電阻部分,而有助於低電阻係數( specific resistance)之固體電解質,可實現至目前爲止未 有的低E S R特性之固體電解電容器,惟若空孔率超過 5 1 %時,則電阻部分增大而未能製得所期待的E S R特 性。再者,空孔率若爲2 0 %以上時,則因可得高容量故 較合適。在此蝕刻箔之空孔率係指鈾刻箔空孔體積以外觀 之蝕刻箔容積除之而算出的値。 再者,於前述的固體電解電容器’若陽極箔之箔厚在 7 0 μ m以上時,則陽極泊之電阻部分會降低’ E S R會 本紙張尺度適用中國國家標隼(CNS ) Α4規格(210x 297公釐)-6 - (請先閱讀背面之注意事項再填寫本頁)BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid electrolytic capacitor using a solid electrolyte as an electrolyte. Conventional technology In recent years, the digitization of electronic information devices has progressed, and the speed of driving of the microprocessor (Μ P U ) in the heart of these electronic information devices is progressing. Along with this, the progress of the increase in the power consumption and the reliability caused by the heat release are also prominent, and there is a countermeasure for attempting to lower the driving voltage. Here, a circuit that supplies high-precision power to the microprocessor, a DC-DC converter called a voltage control module (VR Μ ) is widely used, and the output side capacitor prevents voltage drop. Then a series equivalent resistance (ESR) is used by most. As for the capacitor having such a low E S R characteristic, a solid electrolytic capacitor using a solid electrolyte as an electrolyte is being put to practical use, and a capacitor suitable for such use is widely used. However, the drive frequency of the microprocessor is significantly increased, and the power consumption is increased along with this phenomenon. In response to this phenomenon, the increase in the supply power from the capacitor to prevent the voltage drop is required. In other words, it is necessary to supply a large amount of electric power in a short period of time. Therefore, the solid electrolytic capacitor described above is required to have a large capacity, a small size, a low voltage, and a lower E S R characteristic than the conventional one. Here, the solid electrolytic capacitor is described, and after the metal foil of the valve such as giant or bismuth is etched and the surface area is enlarged, the valve is applied to the anode case of the anodized film and the valve metal body of the Ming, Ju or Rui. Applying the worms to the scales of the Chinese National Standard (CNS) Α4 specifications (210Χ297 mm"Τ' " - 4 - (please read the notes on the back and fill out this page) Bureau staff>^t Cooperatives Printing and Printing Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printing 1264745 A7 B7 _ V. Invention Description (2) Engraving and forming a cathode foil. The anode foil and the cathode foil are interspersed with kraft paper. a spacer such as a polyester (Mylar) synthetic paper, a glass fiber spacer, or a synthetic fiber such as a nylon or a polyester fiber, and an anode is pulled out at any position of the anode foil and the cathode casing. The state of the terminal and the cathode pull-out terminal is taken up, and a capacitor element is formed. A solid electrolyte is formed on the capacitor element, and is housed in a metal case, and is sealed by an epoxy resin or the like. The resin is sealed in the opening of the metal case or inserted into the sealing rubber, and is sealed by a lock-up process. The solid electrolytic capacitor having the above structure is used as an electrolyte, and has a conventional resistivity of 1 Ο Ω Ω - cm ( Compared with the electrolyte of order), a solid electrolyte having a low resistivity of 10 Ω -cm or less is used, and as described above, it is a capacitor having excellent ESR characteristics. However, as for the solid electrolyte, a resistivity has been used for a long time. A few Ω-cm of manganese dioxide, although a solid electrolytic capacitor using a TCNQ complex, a polypyrrole, or a thiophene dielectric having a resistivity of 1 Ω·cm or less is put into practical use, but driven by ΜPU In the progress of re-speeding of the frequency, ESR capacitors which are smaller, larger, and lower are required. According to the inventors of the present invention, in such a solid electrolytic capacitor, the resistivity of the electrolyte is relatively small. Low, but the effect of reducing the ESR of the capacitor is not sufficient. The problem to be solved by the invention is as described above, and only the improvement of the low resistance of the solid electrolyte is desired. The ESR of the low capacitor has its limits. In addition, the ESR reduction is difficult to achieve the paper size. The Chinese National Standard (CNS) Α4 specification (210Χ 297 public Chu) __I____ί______ ______ (please read the back note first) Matters fill out this page again) 1264745 Ministry of Economic Affairs Intellectual Property Bureau Employees' Consumption Cooperatives Printed Β7 Β7 V. Inventions () The problem exists. The present invention is completed to solve the above problems and is provided by using a solid electrolyte having a low resistivity. Solid electrolytic capacitors, and those who achieve low ESR solid electrolytic capacitors. In order to solve the above problems, the inventors have carefully reviewed the results, and by optimizing the porosity of the etching foil used for the electrolytic foil of the capacitor element, it has been found that the electrolytic foil of the capacitor element can be reduced. The inherent resistance 値 makes it possible to further reduce the ESR of the solid electrolytic capacitor. In other words, a solid electrolytic capacitor in which a solid electrolyte is formed on a capacitor element, and an etched foil used for an anode foil of the capacitor element is an uranium engraved foil having a porosity of 51% or less. The etched foil is formed, that is, anodized to obtain the anode of the present invention. Thus, the porosity of the etched foil is set to be less than 51%, which can increase the conductive portion of the anode foil and reduce the resistance portion of the anode foil, and contribute to a low specific resistance solid electrolyte, which can be realized up to the present In the solid electrolytic capacitor having a low ESR characteristic that has not been obtained, if the porosity exceeds 51%, the resistance portion is increased and the desired ESR characteristics are not obtained. Further, when the porosity is 20% or more, it is suitable because a high capacity can be obtained. The porosity of the etched foil herein refers to the enthalpy of the uranium engraved foil void volume divided by the apparent etched foil volume. Furthermore, in the above-mentioned solid electrolytic capacitor, if the foil thickness of the anode foil is 70 μm or more, the resistance of the anode moieties will decrease. ESR will be applicable to the Chinese National Standard (CNS) Α 4 specification (210x). 297 mm)-6 - (Please read the notes on the back and fill out this page)

1264745 A7 B7 五、發明説明 降低’若在 宜爲7 〇〜 又,於 電容器,至 採用空孔率 設成4 4 % 阻係數之有 E S R特性 ’則電阻部 ’空孔率若 1 8 Ο μ m 1 8 Ο μ m 電容器元件 於前述電容 4 4 %以下 以下,陰極 機半導體, 之固體電解 分增大而未 爲1 0 %以 以下時,則可謀求小型化,故箔厚 〇 上形成固體電解質而成的固體電解 器元件之陰極范所用的蝕刻箔’係 的蝕刻箔。藉由將蝕刻范之空孔率 范之電阻部分會降低’有助於低電 可實現出至目前爲止未有的低 電容器,惟若空孔率超過4 4 %時 能製得所期待的E S R特性,再者 上時,則因可得高容量故較合適的 ----I I— m (請先閱讀背面之注意事項再填寫本頁 裝·--- 經濟部智慧財產局sv一消費合作社印製 再者, 5 0 〜1 8 小型化,故 再者, ’電容器之 分較大,故 在此, 可實現出近 又若採 E S R可得 之耐熱特性 特性良好的 於前述的固體電解電容器,若陰極箔之箔厚在 ◦ μ 1Ώ之範圍時,則E S R會更降低,可謀求 較合適。 於捲取前述的電極箔所構成的固體電解電容器 電極箔長且本質上由電極箔本身引起的電阻部 電容器整體之E S R的降低效果變成極大。 若採用T C N Q錯合物作爲固體電解質時,則 年正要求的E SR爲5〜8η]Ω之低E SR。 用式1表示的噻吩電介質之聚合物時,貝ij 與C N Q錯合物相同以上的特性,再者電容器 會提高,故較合適。其中較佳爲反應性、電氣 3 ,4 一伸氧基二氧基噻吩。 本纸張尺度適用中國國家榡孪(CNS ) A4規格(210X 297公釐) -7 - I ! - r I }· II -- 訂 ____f I, _ 1264745 A7 B7 五、發明説明()1264745 A7 B7 V. Description of the invention: If the voltage is set to 7 〇 又 又 又 于 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器 电容器m 1 8 Ο μ m The capacitor element is not more than 4% by volume of the capacitor, and when the solid electrolytic component of the cathode semiconductor is increased and not more than 10%, the size can be reduced, so that a solid is formed on the foil thickness. An etched foil of an etched foil used in the cathode of a solid electrolyte device made of an electrolyte. By reducing the resistance of the etched vane to the low-capacitance portion, it is possible to achieve a low-capacitance that has not been achieved until now, but the expected ESR can be obtained if the porosity exceeds 4 4 %. Characteristics, and when it comes up, it is more suitable because of the high capacity available ---- II- m (Please read the notes on the back and fill out this page again.--- Ministry of Economic Affairs Intellectual Property Bureau sv a consumer cooperative In addition, 5 0 to 1 8 are miniaturized, and therefore, 'the capacitors are large, so here, the solid electrolytic capacitors with good heat resistance characteristics that can be obtained by ESR can be realized. If the thickness of the foil of the cathode foil is in the range of ◦ μ 1 , the ESR will be further lowered, and the method can be suitably applied. The electrode of the solid electrolytic capacitor formed by winding the electrode foil described above is long and is essentially caused by the electrode foil itself. The effect of reducing the ESR of the entire resistor capacitor becomes extremely large. When a TCNQ complex is used as the solid electrolyte, the ESR required for the year is a low E SR of 5 to 8 η] Ω. The thiophene dielectric represented by Formula 1 When polymer, beij and CN It is more suitable for the Q complex to have the same characteristics or more, and the capacitor is improved, and it is more suitable. Among them, the reactive, electrical 3,4-extended oxydioxythiophene is preferred. The paper size is applicable to the Chinese national standard (CNS). A4 size (210X 297 mm) -7 - I ! - r I }· II -- Order ____f I, _ 1264745 A7 B7 V. Invention description ()

經濟部智¾財產局員工消費合作社印製 (式內,X表示〇或S,X爲〇之時,A爲伸烷基或聚氧 基伸烷基,X之至少〜考爲S時,厶爲伸烷基、聚氧基伸 烷基、取代伸烷基、取代聚氧基伸烷基,在此,取代基係 烷基、烯基、烷氧基。 又至於固體電解質,若採用二氧化錳時,則因耐熱特 性提高,故較合適。 發明之實施形態 具體的說明本發明之實施形態。於由鹽酸水溶液等而 成的飽刻液中以交流蝕刻方式使鋁箔粗面化,使空孔率成 5 1 %以下。再者爲形成介電體被膜,在由磷酸水溶液等 而成的予以生成液中施行予以生成,製作陽極箔,如此藉 由將蝕刻箔之空孔率設成5 1 %以下,宜爲4 3 %以下, 更宜爲3 7 %以下,使陽極箔之導電部分增大並降低電阻 部分’使固體電解電容器之E S R降低。如此於本發明, 藉由使空孔率降低,使電極箔之導電部分增大並試圖降低 E S R,故儘管蝕刻凹痕之深度尺度或面積比率等的狀態 (請先閱讀背面之注意事項再填寫本頁) -3 ·1 l*li — — 1 ml 0¾ . 、v5 έ 本纸張尺度適用中國國家標準(CNs ) A4規格(210X'297公釐)-8 - 1264745 A7 ____ B7 6 --- 五、發明説明() (請先閱讀背面之注意事項再填寫本頁) ’例如即使在蝕刻箔之兩面的蝕刻凹痕之深度不同的狀態 ’本發明之功效亦不減少。再者,爲確保最大限之容量體 積效率’若空孔率爲2 〇 %以上時,則蝕刻面積增大並可 得局容量,故較合適。 再者’若陽極箔之箔厚在7 Ο μ m以上,宜爲9〇 μ m以上時,則陽極箔之電阻部分降低且E s r降低,若 18 0 μ m以下,宜爲1 5 0 μ ηι以下,則電容器之體 積效率提高,可謀小型化,故膜厚爲7 0〜1 8 0 μ m, 更且爲9 0〜150 μ π}。 又,與陽極箔同樣的以交流蝕刻或化學蝕刻使鋁箔粗 面化’藉由將空孔率設成4 4%以下,宜爲3 5%以下, 更宜爲2 6 %以下,製作陰極箔。以如此進行,使陰極箔 電阻部分降低,使固體電解電容器之E S R降低。再者爲 確保最大限之容量體積效率,若空孔率爲1 〇 %以上時’, 則蝕刻面積增大,可得高容量,故較合適。再者,陰極范 之箱厚爲5〇〜180 μη],宜爲70〜15〇 μιπ, 更宜爲7 0〜1 0 0 μ m之範圍時,則E S R可進一步降 低,可謀小型化,故較宜。 經濟部智慧財產局員工消費合作社印製 在此,採用電阻係數較低的有機半導體,使空孔率降 低並電極箔之導電部分增大的捲回型之固體電解電容器, 藉由圖謀電極箔之每單位面積之電阻値’亦即正四方形之 電極箔之端面間的電阻値(以下稱箔電阻率)、箱寬度及 箔面積之最適化,可進一步降低電容器之E s R。 亦即,電阻係數係採用1 〇 Ω · c m以下的有機半導 本纸張尺度適用中國國家標隼(CNS ) A4規格(2丨0Χ 297公釐) 1264745 Α7 Β7 五、發明説明() 體,藉由採用以下的電極箔’可使有機半導體之低電阻係 數特性發揮至最大限。本發明所用的電極箔係箔電阻係數 爲〇.1 5〜〇.6 m Ω ,更佳爲〇 · 1 7〜〇· 4 5 m Ω。藉由採用此範圍之電極箔,使電極箔之電阻部分.降 低,降低E S R。未滿此範圍使E S R之降低效果少, 若超過此範圍時,則E S R之降低率降低。 因此,箔寬度爲3〜1 6 m m,宜爲5〜1 4 m m。 未滿此範圍時,箔電阻係數即使降低亦大大有助於電解質 之電阻部分,使E S R不降低。若超過此範圍時,則 E S R之降低率減少,再者電容器元件長度變大,使有機 半導體之浸漬性降低,降低電解質之保持性,E S R上升 〇 因此,箔面積需在3 0 0 m m 2以上,宜爲5 0 0 m m 2以上。未滿此範圍,則電極箔及電解質之面積部分 較小,電阻値不降低,故E S R不降低。因此,因係採用 本發明之固體電解電容器介經間隔件並予捲回而成的電容 器元件,可採用電極箔之箔長較長者。由此可得足夠的箔 面積,E S R會降低。 在此,如上述,陰極箔係採用蝕刻箔,陽極箔係於由 磷酸水溶液等而成的予以生成液中使此蝕刻箔通電,並於 此表面上形成氧化被膜者。因此此種電極箔係由未予蝕刻 的鋁之部分(以下稱作殘芯)及蝕刻部分,陽極箔時則再 由氧化被膜部分而成,惟藉由將此殘芯之度設成5 0〜 17 0 μ m,更宜爲設成6 0〜1 5 0 μ m,可將箔電 (請先閱讀背面之注意事項再填寫本頁) 裝·--- 訂--- 經濟部智慧財產局員工消費合作社印製 本纸張尺度適用中國國家標準(CNS ) A4規格(210Χ297公釐) -10 - 1264745 經濟部智慧財產局員工消骨合作社印製 A7 B7 五、發明説明(8 ) 阻係數設成0 · 1 5〜0 · 6 m Ω,更宜爲0 · 1 7〜 0 · 4 5 m Ω。又,殘芯厚度過大時,則捲回作業變成不 容易,故殘芯厚度宜爲1 〇 〇 μ m以下。 在此’至於有機半導體若採用T C N Q錯合物時,·則 可實現近年被要求的E SR爲4〜6ιήΩ之低E SR。 又’至於有機半導體,即使採用導電性聚合物, E S R係可得與T C N Q錯合物同等以上的特性,再者若 採用以導電性聚合物(式1 )表示的噻吩電介質之聚合物 時,則電容器之耐熱特性提高,故較合適,其中,宜爲反 應性、電氣特性良好的3,4乙氧基噻吩。 又’在被要求小型化的表面實際安裝用之固體電解電 容器’前述的電極箔之箔寬或箔長不可儘量的小,惟採用 電阻係數較低的導電性聚合物,使空孔率降低並使電極箔 之導電部分增大的捲回型之表面實際安裝型固體電解電容 器,藉由圖謀箔電阻係數及箔寬與箔面積之最適化,可再 降低電容器之ESR。 亦即,藉由採用電阻係數0 . 1 Ω · c m以下的導電 性聚合物,採用以下的電極箔,可使導電性聚合物之低電 阻係數特性發揮至最大限者,可實現出具有向來未有的低 E S R特性之固體電解電容器者。本發明所用的電極箔係 箔電阻係數爲0 · 27〜0 · 7ηιΩ,更宜爲〇 · 34〜 〇 . 5 5 m Ω。藉由採用此範圍之電極箔,可使電極箔之 電阻部分降低,E S R降低。在未滿此範圍時,E S R之 降低效果少,若超過此範圍時,則E S R之降低率會減少 本纸乐尺度適用中國國家標準(CNS ) A4規格(2丨〇:<297公釐)—川一 (請先閱讀背面之注意事項再填寫本頁)Ministry of Economic Affairs Zhizhi 3⁄4 Property Bureau employee consumption cooperative printing (in the formula, X means 〇 or S, X is 〇, A is alkyl or polyoxyalkylene, X is at least ~ test is S, 厶An alkyl group, a polyoxyalkylene group, a substituted alkylene group, or a substituted polyoxyalkylene group, wherein the substituent is an alkyl group, an alkenyl group or an alkoxy group. Further, as for a solid electrolyte, when manganese dioxide is used, The embodiment of the present invention is specifically described in the embodiment of the present invention. The aluminum foil is roughened by an alternating current etching method in a saturated liquid obtained from an aqueous solution of hydrochloric acid or the like to form a porosity. 5 1 % or less. In addition, a dielectric film is formed and formed in a liquid to be formed by a phosphoric acid aqueous solution or the like to prepare an anode foil, whereby the porosity of the etching foil is set to 5 1 % or less. Preferably, it is 43% or less, more preferably 7% or less, and the conductive portion of the anode foil is increased and the resistance portion is lowered to lower the ESR of the solid electrolytic capacitor. Thus, in the present invention, by reducing the porosity, Increase the conductive portion of the electrode foil and try to reduce E SR, so the state of the depth scale or area ratio of the etched pits (please read the back of the page and fill in the page) -3 ·1 l*li — — 1 ml 03⁄4 . , v5 έ This paper size applies. China National Standard (CNs) A4 Specification (210X'297 mm)-8 - 1264745 A7 ____ B7 6 --- V. Invention Description () (Please read the note on the back and fill out this page) 'For example, even after etching The effect of the present invention is not reduced in the state where the depths of the etched pits on both sides of the foil are different. Further, in order to ensure the maximum volumetric volumetric efficiency, if the porosity is 2% or more, the etching area is increased. If the foil thickness of the anode foil is above 7 Ο μ m, preferably above 9 〇μm, the resistance of the anode foil is reduced and E sr is reduced, if 18 μ μ When m is less than or equal to 150 μm or less, the volumetric efficiency of the capacitor is increased, and the size can be reduced, so that the film thickness is 70 to 180 μm, and more preferably 90 to 150 μππ}. The aluminum foil is roughened by AC etching or chemical etching as in the anode foil 'by setting the porosity to 4 4% or less, preferably 35% or less, more preferably 26% or less, to prepare a cathode foil. In this way, the resistance of the cathode foil is lowered, and the ESR of the solid electrolytic capacitor is lowered. Further, the maximum capacity is ensured. The volumetric efficiency, if the porosity is 1% or more, the etching area is increased, and a high capacity is obtained, so that it is suitable. Further, the thickness of the cathode is 5 〇 to 180 μη], preferably 70 〜 When 15 〇 μιπ, more preferably in the range of 70 to 1 0 0 μm, the ESR can be further lowered, and it is preferable to be miniaturized. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the consumer cooperatives, using a low-resistance organic semiconductor to reduce the porosity and increase the conductive portion of the electrode foil, by drawing back the electrode foil. The resistance 每 of each unit area, that is, the resistance 値 (hereinafter referred to as foil resistivity) between the end faces of the square square electrode foil, the box width and the foil area are optimized, and the E s R of the capacitor can be further reduced. That is, the resistivity is 1 〇Ω · cm or less. The organic semi-conducting paper scale is applicable to the Chinese National Standard (CNS) A4 specification (2丨0Χ 297 mm) 1264745 Α7 Β7 5. Inventive Note () The low resistivity characteristic of the organic semiconductor can be maximized by using the following electrode foil '. The electrode foil foil used in the present invention has a resistivity of 〇.1 5 〇.6 m Ω , more preferably 〇 · 1 7 〇 · 4 5 m Ω. By using the electrode foil of this range, the resistance portion of the electrode foil is lowered, and E S R is lowered. If the range is less than this, the effect of reducing E S R is small, and if it exceeds this range, the rate of decrease of E S R is lowered. Therefore, the foil width is 3 to 16 m m, preferably 5 to 14 m m. When this range is not reached, even if the foil resistivity is lowered, it contributes greatly to the resistance portion of the electrolyte, so that E S R does not decrease. When it exceeds this range, the rate of decrease of ESR is reduced, and the length of the capacitor element is increased, the impregnation property of the organic semiconductor is lowered, the retention of the electrolyte is lowered, and the ESR is increased. Therefore, the foil area needs to be 300 mm 2 or more. It should be more than 500 mm 2 or more. When this range is not satisfied, the area of the electrode foil and the electrolyte is small, and the resistance 値 is not lowered, so E S R does not decrease. Therefore, since the capacitor element of the solid electrolytic capacitor of the present invention is formed by interposing a spacer through a spacer, the foil of the electrode foil can be made longer. As a result, a sufficient foil area is obtained and E S R is lowered. Here, as described above, the cathode foil is an etched foil, and the anode foil is applied to a liquid to be formed by a phosphoric acid aqueous solution or the like to cause the etching foil to be energized, and an oxide film is formed on the surface. Therefore, the electrode foil is composed of a portion of aluminum that is not pre-etched (hereinafter referred to as a residual core) and an etched portion, and an anode foil is formed by a portion of the oxidized film, but by setting the degree of the residual core to 50. ~ 17 0 μ m, more preferably set to 60 0~1 5 0 μ m, can foil the electricity (please read the back of the note before you fill in this page) Pack ·--- Order --- Ministry of Economics intellectual property Bureau employees' consumption cooperatives printed this paper scale applicable to China National Standard (CNS) A4 specifications (210Χ297 mm) -10 - 1264745 Ministry of Economic Affairs Intellectual Property Bureau employees Bone Cooperatives Printing A7 B7 V. Invention Description (8) Resistance coefficient Set to 0 · 1 5~0 · 6 m Ω, more preferably 0 · 1 7~ 0 · 4 5 m Ω. Further, when the thickness of the residual core is too large, the winding back operation becomes difficult, so the thickness of the residual core should be 1 〇 〇 μ m or less. Here, as for the organic semiconductor, if a T C N Q complex is used, a low ESR of E 6 of 4 to 6 ή Ω which has been required in recent years can be realized. Further, as for the organic semiconductor, even if a conductive polymer is used, ESR can obtain properties equivalent to or higher than those of the TCNQ complex, and when a polymer of a thiophene dielectric represented by a conductive polymer (Formula 1) is used, It is preferable that the heat resistance of the capacitor is improved, and among them, 3,4 ethoxythiophene which is excellent in reactivity and electrical properties is preferable. In addition, the thickness of the foil or the foil length of the electrode foil of the above-mentioned electrode foil is not as small as possible, but the conductivity of the conductive polymer having a low electrical resistivity is lowered to reduce the porosity. The roll-back type surface-mounted solid electrolytic capacitor in which the conductive portion of the electrode foil is enlarged can reduce the ESR of the capacitor by optimizing the foil resistivity and the foil width and the foil area. In other words, by using a conductive polymer having a resistivity of 0.1 Ω·cm or less, the following electrode foil can be used to maximize the low resistivity of the conductive polymer, and it is possible to achieve a long-term Some solid electrolytic capacitors with low ESR characteristics. The electrode foil foil used in the present invention has a resistivity of 0 · 27~0 · 7ηιΩ, more preferably 〇 · 34~ 〇 . 5 5 m Ω. By using the electrode foil of this range, the resistance portion of the electrode foil can be lowered and the E S R can be lowered. When the range is less than this range, the ESR reduction effect is small. If it exceeds this range, the ESR reduction rate will be reduced. The paper standard is applicable to the Chinese National Standard (CNS) A4 specification (2丨〇: <297 mm) —Chuan Yi (please read the notes on the back and fill out this page)

1264745 A7 B7 五、發明説明() 〇 因此,如上述5爲使電極箔之箔電阻係數I受胃 0 · 27〜〇· 7]ήΩ,更宜爲〇.34〜〇.55]όΩ (請先閱讀背面之注意事項再填寫本頁) ’可採用殘芯厚度4〇〜1〇0 pm,更宜爲5〇〜8〇 μ 1Ή之電極箱。 因此,至於導電性聚合物,若採用以式丨表示的噻吩 衍生之聚合物時,則因具有〇 · 1 Ω · c m以下的低電阻 係數特性,故可使電容器之E S R降低,使電容器之耐熱 特性提局’故較合適,其中宜爲以反應性、電氣特性良好 的3 ,4 一伸乙氧基噻吩爲宜。 又若於陰極箱上形成0 · 1〜10V,宜爲q . 3〜 5 V之予以生成被膜時,則E S R降低,高溫壽命特性可 提高,故較合適。 又’若於陰極箔之表面上形成氮化鈦或鈦等的氧化性 較低的金屬化合物或由金屬而成的層時,則靜電容量增加 ’故較宜。在此,於陰極箔上形成予以生成被膜,於此予 以生成被膜之上若形成前述的氧化性較低的金屬或由金屬 化合物而成的層,則更宜。 經濟部智慧財產局員工消費合作社印製 於以上的陽極箔及陰極箔上安裝陽極拉出端子,陰極 拉出端子,介經間隔件並予捲回。其後,於予以生成液中 施加電壓’可修復於至目前爲止的步驟損傷的介電體氧化 被膜,採用在此已前述的本發明之陽極箔及習用的陰極箔 ,習用的陽極箔及本發明之陰極箔,可得本發明之效果, 惟藉由採用本發明之陽極箔及陰極箔之雙方,可得最大的 本纸張尺度適用中國國家標準(CNS ) A4規格(210X_297公釐) -12 - 1264745 A7 B71264745 A7 B7 V. INSTRUCTIONS () 〇 Therefore, as described above, the foil resistance coefficient I of the electrode foil is affected by the stomach 0 · 27~〇·7] ήΩ, more preferably 〇.34~〇.55]όΩ (please Read the precautions on the back and fill out this page. 'The residual core thickness can be 4〇~1〇0 pm, more preferably 5〇~8〇μ1Ή. Therefore, when a thiophene-derived polymer represented by the formula 采用 is used as the conductive polymer, since the low resistivity characteristic of 〇·1 Ω·cm or less is used, the ESR of the capacitor can be lowered, and the heat resistance of the capacitor can be made. It is more suitable for the characteristic pick-up, and it is preferable to use 3,4 ethoxy thiophene with good reactivity and good electrical properties. Further, when a film of 0·1 to 10 V is formed on the cathode case, and it is preferable to form a film of q. 3 to 5 V, E S R is lowered, and high-temperature life characteristics can be improved, which is preferable. Further, when a metal compound having a low oxidizing property such as titanium nitride or titanium or a layer made of a metal is formed on the surface of the cathode foil, the electrostatic capacity is increased, which is preferable. Here, it is preferable to form a film on the cathode foil to form a film on which a metal having a low oxidizing property or a metal compound is formed on the film. Printed by the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs. The anode pull-out terminal is mounted on the above anode foil and cathode foil, and the cathode is pulled out of the terminal, and the spacer is rolled back through the spacer. Thereafter, a dielectric oxide film which can be repaired in the step of applying a voltage to the present solution is used, and the anode foil of the present invention and the conventional cathode foil, the conventional anode foil and the present invention are used. The cathode foil of the invention can obtain the effect of the invention, but by using both the anode foil and the cathode foil of the invention, the largest paper scale can be applied to the Chinese National Standard (CNS) A4 specification (210X_297 mm) - 12 - 1264745 A7 B7

Γ ' TD 五、發明説明() 效果。 (請先閱讀背面之注意事項再填寫本頁) 在此,至於間隔件,可採用由馬尼拉紙、牛皮紙、玻 璃間隔件等、或乙烯醇(維尼龍)、聚酯等合成纖維而成 的非織物、再者可採用多孔質間隔件。 且,於電極箔上安裝拉出端子之際,若採用本發明之 導電部分已增大的電極箔時’則電極箔及拉出端子之接合 部分的接觸電阻降低,使固體電解電容器之E S R再降低 接著,說明採用T C N Q錯合物作爲固體電解質之情 形。於由鋁而成的圓筒形之金屬外殼內,置於於已加熱的 平面加熱器上,使T C N Q錯合物熔融液化。因此,浸漬 經予預熱的前述電容器元件,將金屬外殼浸入冷卻水內並 使T C N Q錯合物冷卻固化,再者,於外殼內注入環氧樹 月旨,在高溫氣圍中使加熱硬化。其後,施加加熱電壓並進 行老化以製作固體電解電容器。 經濟部智慈財產局員工消资合作社印^ 又於採用3 ,4 —伸乙氧基噻吩(EDT)之聚合物 的聚一 (3,4 一伸乙氧基噻吩)(PEDT)作爲固體 電解質時,將電容器元件浸瀆於混合E D T及氧化劑與指 定的溶劑而製備的混合液,在電容器元件內使發生E D 丁 之聚合反應,形成由P E D T而成的固體電解質層。因此 ,將此電容器元件插入金屬外殼內,於開口端部插入封口 橡膠,以鎖緊加工予以封□,完成固體電解電容器。 至於前述的E D T,可採用E D T單體,惟亦可採用 以1 : 0〜1 : 3之體積比混合E D T及揮發性溶劑的單 本纸浪尺度適用中國國家標準(CNS ) A4規格(210x 297公釐) -13 - 經濟部智慧財產局工消費合作社印製 1264745 A7 __ B7 11 五、發明説明()Γ ' TD V. Invention Description () Effect. (Please read the precautions on the back and fill out this page.) Here, as for the spacer, non-synthetic fibers such as Manila paper, kraft paper, glass spacers, or vinyl alcohol (Vinyl) or polyester can be used. For the fabric, a porous spacer may be used. Further, when the pull-out terminal is attached to the electrode foil, when the electrode foil having the conductive portion of the present invention is used, the contact resistance of the joint portion between the electrode foil and the pull-out terminal is lowered, and the ESR of the solid electrolytic capacitor is further Lowering Next, the case where a TCNQ complex is used as a solid electrolyte will be described. The T C N Q complex is melted and liquefied in a cylindrical metal casing made of aluminum and placed on a heated planar heater. Therefore, the pre-heated capacitor element is immersed, the metal casing is immersed in the cooling water, and the T C N Q complex is cooled and solidified. Further, an epoxy resin is injected into the casing to heat-harden it in the high temperature gas cell. Thereafter, a heating voltage was applied and aged to prepare a solid electrolytic capacitor. The Ministry of Economic Affairs, the Intellectual Property Co., Ltd. employee-sponsored co-operatives, and the use of poly(3,4 ethoxylated thiophene) (PEDT) as a solid electrolyte in the polymer of 3,4-ethoxy thiophene (EDT) The capacitor element is immersed in a mixed liquid prepared by mixing EDT and an oxidizing agent with a predetermined solvent, and a polymerization reaction of ED is performed in the capacitor element to form a solid electrolyte layer made of PEDT. Therefore, the capacitor element is inserted into the metal casing, and the sealing rubber is inserted into the open end portion to be sealed by the locking process to complete the solid electrolytic capacitor. As for the aforementioned EDT, EDT monomers can be used, but it is also possible to use a single paper wave scale of EDT and volatile solvent in a volume ratio of 1:0 to 1:3. Applicable to the Chinese National Standard (CNS) A4 specification (210x 297)公)) -13 - Ministry of Economic Affairs, Intellectual Property Bureau, Consumer Cooperatives, Printing 1264745 A7 __ B7 11 V. Inventions ()

Bs ί谷液。至於前述揮發性溶劑,可採用戊烷等烴類、四氯 呋喃等醚類、蟻酸乙酯等酯類,丙酮等酮類、甲醇等醇類 、乙‘等氮化合物等。其中’宜爲甲醇、乙醇、丙酮等。 又主於氧化劑,可採用已溶解於丁醇的對甲苯磺酸鐵、過 碘酸或碘酸之水溶液,氧化劑對溶劑之溫度宜爲4 〇〜 5 5重量%。未滿在此範圍,ε SR會上升,若超過此範 時,則靜電容量降低。 £ D Τ及氧化劑(不含溶劑)之混合比,係以重量比 在1 · 0 · 9〜1 : 2 · 2之範圍爲較合適。在此範圍外 ’ E S R會上升。其理由可被視作如下述。亦即,對單體 之氧化劑的量若過多時,則相對的經予浸漬的單體之量降 低’故所形成的P E D Τ之量降低,且E s r上升。另一 方面,氧化劑之量若過少時,則聚合單體所需的氧化劑不 足’所形成的P E D Τ之量減少且E S R上升。 可採用在此已說明的E D Τ及其他亦有聚合性單體。 至於聚合性單體,係苯胺、吡咯、呋喃、乙炔或該等的衍 生物’藉由指定的氧化劑使進行氧化聚合,若爲可形成導 電性聚合物者時,則可適用。 又’至於固體電解質中無機電解質,可採用二氧化錳 時’則在已浸漬電容器元件於硝酸錳水溶液後,以3 〇 〇 〜4 0 0 °C進行熱處理。其後再度於予以生成液中施加電 壓’進行熱處理中已損傷的介電體被膜之修復予以生成。 重複此硝酸錳水溶液浸漬、熱處理、修復予以生成數次。 最後在4 0 0〜5 0 0 °C進行熱處理,再度進行修復予以 本纸張尺度適用中國國家標隼(CNS ) A4規格(210x 297公釐)_ 14 - --------裝·-----:----訂-------I------1 (請先閱讀背面之注意事項再填寫本頁) 1264745Bs ί谷液. As the volatile solvent, a hydrocarbon such as pentane, an ether such as tetrachlorofuran or an ester such as ethyl formate, an ketone such as acetone, an alcohol such as methanol, or a nitrogen compound such as B may be used. Among them, it is preferably methanol, ethanol, acetone or the like. Further, depending on the oxidizing agent, an aqueous solution of iron p-toluenesulfonic acid, periodic acid or iodic acid which has been dissolved in butanol may be used, and the temperature of the oxidizing agent to the solvent is preferably 4 〇 to 55 5% by weight. If it is less than this range, ε SR will rise. If it exceeds this range, the electrostatic capacity will decrease. The mixing ratio of D Τ and oxidizing agent (excluding solvent) is preferably in the range of 1 · 0 · 9 to 1 : 2 · 2 by weight. Outside this range, 'E S R will rise. The reason can be considered as follows. That is, if the amount of the monomer oxidizing agent is too large, the amount of the relatively impregnated monomer is lowered. Thus, the amount of P E D 形成 formed is lowered, and E s r is increased. On the other hand, if the amount of the oxidizing agent is too small, the amount of P E D 形成 formed by the oxidizing agent required to polymerize the monomer is reduced and the E S R is increased. E D 在 and other polymeric monomers which have been described herein may be employed. As the polymerizable monomer, aniline, pyrrole, furan, acetylene or the like can be oxidatively polymerized by a predetermined oxidizing agent, and can be used if a conductive polymer can be formed. Further, as for the inorganic electrolyte in the solid electrolyte, manganese dioxide may be used, and after the capacitor element has been immersed in the aqueous solution of manganese nitrate, heat treatment is performed at 3 〇 4 to 400 ° C. Thereafter, a voltage applied to the resultant liquid is again applied to repair the damaged dielectric film in the heat treatment. This manganese nitrate aqueous solution is repeatedly immersed, heat-treated, and repaired to be formed several times. Finally, heat treatment is carried out at 4 0 0~0 0 °C, and repaired again. This paper scale applies to China National Standard (CNS) A4 specification (210x 297 mm) _ 14 - -------- ·-----:----Book-------I------1 (Please read the notes on the back and fill in this page) 1264745

生成。如此將已形成用作固體電解質之二氧化錳的電容器 元件於外裝外殼內,注入環氧樹脂並使加熱硬化且予密閉 ’形成固體電解電容器。又亦可採用二氧化鉛作爲此種無 機電解質。 實施例 以下以實施例具體的說明本發明之固體電解電容器。 (實施例1 ) 說明採用T C N Q錯合物作爲固體電解質之實施例。 藉由交流蝕刻使鋁箔粗面化,再者施以爲形成介電物氧化 被膜而用的予以生成,製作本發明之陽極箔,又與鋁箔同 樣的藉由交流蝕刻予以粗面化,於表面上形成化學被膜並 製作陰極箔。於此陽極箔及陰極箔之間介在以由馬尼拉紙 而成的間隔件,於任意位置各自安裝陽極拉出端子,陰極 拉出端子並予捲取。其後,在予以生成液中施加電壓,利 用捲取可修復予以生成已損傷的介電體氧化被膜。 於另一方面,於由銘而成的圓筒形之金屬外殼內放入 T C N Q錯合物,置放於已加熱至約2 8 0 °C之平面加熱 器上’使T C N Q錯合物熔融液化。於其中浸漬經予預熱 至約3 0 0°C之前述電容器元件,立即將金屬外殼浸入冷 卻水中並使T C N Q錯合物冷卻固化。再者,於外殼內注 入所需量環氧樹脂,使在高溫氣圍氣中加熱硬化,然後, 在1 2 5 t:中於端子間施加額定電壓1小時並進行老化, 本纸乐尺度適用中國國家標準(CNS ) Α4現格(210X 297公釐) -15 - (請先閱讀背面之注意事項再填寫本頁 I n —-I- 1 ιί·1 訂 經濟部智慧財產局員工消費合作社印製 6 %之箔 3 9 %之 1264745 A7 B7 ~- Τ3 " ------ 五、發明説明() 而得1 04xl 0 L之固體電解電容器。 (貫施例1 — 1 ) 在此,於如此形成的固體電解電容器,採用厚度 1 Ο Ο μ m、餓刻後之空孔率爲2 6 %之箱作爲陽極范, 厚度8 5 μ m、蝕刻後之空孔率爲1 9 %之箔作爲陰極箔 ’作爲實施例1 一 1。 (貫施例1 一 2 ) 採用厚度1 Ο Ο μ m,蝕刻後之空孔率爲4 作爲陽極箔,厚度5 Ο μ m,蝕刻後之空孔率爲 箔作爲陰極箔,作爲實施例1 - 2。 (實施例1 一 3 ) 除採用厚度1 Ο Ο μ m,蝕刻後之空孔率爲之 箱作爲陽極箱外’藉由與實施例1 一 2相同的手段製作固 體電解電容器,作爲實施例1〜3。 (貫施例1 一 4 ) 又,採用厚度1 Ο Ο μ m,蝕刻後之空孔率5 2 %之 洛作爲陽極箔,採用厚度7 5 μ m,蝕刻後之空孔率5 2 %之箔作爲陰極箔,作爲實施例i — 4。 (習知例1 ) 太纸張尺度適用中國國家標準(CMS ) A4規格(210X297公| - ....... _i n lit - - 1 j j · in . (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慈財產局賣工消費合作社印製 1264745 A7generate. Thus, a capacitor element in which manganese dioxide used as a solid electrolyte has been formed is placed in an outer casing, an epoxy resin is injected, and heat is hardened and sealed to form a solid electrolytic capacitor. Lead dioxide can also be used as such an inorganic electrolyte. EXAMPLES Hereinafter, a solid electrolytic capacitor of the present invention will be specifically described by way of examples. (Example 1) An example in which a T C N Q complex was used as a solid electrolyte was described. The aluminum foil is roughened by alternating current etching, and is formed by forming a dielectric oxide film, and the anode foil of the present invention is produced, and the same as the aluminum foil is roughened by alternating current etching on the surface. A chemical film is formed and a cathode foil is produced. Between the anode foil and the cathode foil, an anode pull-out terminal is attached to each of the spacers made of Manila paper, and the cathode is pulled out of the terminal and pre-wound. Thereafter, a voltage is applied to the generated liquid, and the wound dielectric film can be repaired to form a damaged dielectric oxide film. On the other hand, a TCNQ complex was placed in a cylindrical metal casing formed by Ming, and placed on a planar heater heated to about 280 °C to melt the TCNQ complex. . The foregoing capacitor element preheated to about 300 ° C was dipped therein, and the metal casing was immediately immersed in cooling water and the T C N Q complex was cooled and solidified. Furthermore, a required amount of epoxy resin is injected into the outer casing to heat-harden in a high-temperature gas enclosure, and then a rated voltage is applied between the terminals for 1 hour in 1 2 5 t: and aged, and the paper scale is applied. China National Standard (CNS) Α4 Grid (210X 297 mm) -15 - (Please read the notes on the back and fill out this page I n —-I- 1 ιί·1 Booked by the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative 6% of the foil 3 9 % of the 1264745 A7 B7 ~- Τ 3 " ------ 5, invention description () and get a 04xl 0 L solid electrolytic capacitor. (Case 1 - 1) In the solid electrolytic capacitor thus formed, a box having a thickness of 1 Ο Ο μ m and a porosity of 26% after being hungry is used as an anode, the thickness is 8 5 μm, and the porosity after etching is 19%. The foil was used as the cathode foil' as Example 1 - 1. (Example 1 - 2) The thickness was 1 Ο Ο μ m, and the porosity after etching was 4 as the anode foil, and the thickness was 5 Ο μ m, after etching. The porosity is a foil as a cathode foil, as Example 1-2. (Examples 1 to 3) Except for the thickness of 1 Ο Ο μ m, after etching A solid electrolytic capacitor was produced by the same means as in Example 1 to 2, and the thickness was 1 Ο Ο μ m. (Examples 1 to 4) Further, the thickness was 1 Ο Ο μ m. After the etching, the porosity was 52% as the anode foil, and a foil having a thickness of 75 μm and a porosity of 52% after etching was used as the cathode foil as Example i-4. ) The paper size applies to the Chinese National Standard (CMS) A4 specification (210X297 public | - ....... _i n lit - - 1 jj · in . (Please read the notes on the back and fill out this page) Ministry of Economic Affairs, Zhici Property Bureau, Selling Consumers Cooperative, Printed 1264745 A7

IT 發明説明 又’採用厚度1〇Ο μ m 五 之箱作爲陽極箔,採用厚度 ^ %之箔作爲陰極箔。 ,蝕刻後之空孔率爲5 2 % 〇μ m,蝕刻後之空孔率爲 表1係陽極箔之箔電阻及實施例1 一 1〜1 一 4及習 %例而得的固體電解電容器之E S R的比較表。 表IT invention description A case of a thickness of 1 〇Ο μ m 5 is used as the anode foil, and a foil having a thickness of 5% is used as the cathode foil. The porosity after etching is 52 % 〇μ m, and the porosity after etching is the foil resistance of the anode foil of Table 1 and the solid electrolytic capacitors of the examples 1 to 1 to 4 and the conventional example. A comparison table of ESR. table

--------裝·--- (請先閱讀背面之注意事項再填寫本頁)--------装·--- (Please read the notes on the back and fill out this page)

-I— m 'IT 4 經濟部智慧財產局P'工消費合作社印製 由表1可知採用本發明之陽極箔的實施例丄—2、 1 — 3 ’採用本發明之陰極箔的實施例χ 一 4與習知例相 比,E S R係降低的。再者,採用空孔率爲2 6 %之陽極 箔及9 1 %之陰極箔的實施例1 一 1係降低至5 · 8 m Ω ’可實現出向來未曾有的低E S R。又,已採用空孔率爲 3 3 %之陽極箔之實施例1 一 3係E S R較已採用空孔率 爲4 6 %之陽極箔之實施例1 一 2可予降低。 豕纸張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -17 1264745 A7 B7 五、發明説明() 又可知藉由空孔由習知例減少至實施例之2 6〜4 6 %,箔電阻由2 3 1 m Ω / ηι降低至7 5〜1 5 3 ηι Ω / m,電極箔之導電部分增大,電阻部分降低。 又至於比較例,與實施例1 - 1同法形成電容器元.件 ’於此電容器元件內浸漬具有低電阻係數特性之電解液並 形成電解電容器。已用的電解液係> - 丁內酯7 5分,苯 二甲酸乙二甲咪唑啉鑰2 5分。所得的E S R係顯示著高 至5 2 m Ω之値,即使採用本發明之電極箔,若不使用具 有低電阻係數特性之固體電解質作爲電解質時,則可知未 能獲得本發明之效果。 (實施例2 ) 其次說明採用P E D T作爲固體電解質之實施例。至 於間隔件,係採用維尼龍纖維而成的非織物,於陰極箔方 面係於予以生成被膜之上形成由氮化鈦而成的層,其他則 與實施例1同樣的形成電容器元件,進行修復予以生成。 因此如下述般進行固體電解質之形成。於杯狀的容器內, 注入E D T及4 5 %之對甲苯磺酸鐵的丁醇溶液使其重量 比成1 : 0 · 8 ,製備混合液。因此,將電容器元件浸漬 於上述混合液內1 〇分鐘。因此,在1 2 0 °C加熱1小時 ’使在電容器內發生P ED 丁之聚合反應,形成固體電解 層。因此,將此電容器元件插入有底筒狀之鋁外殻內,藉 由拉擠加工對開口部進行橡膠封口並進行老化試驗,製作 1〇0 xl 0 L之固體電解電容器。因此製作出已採用與 本纸張尺度適用中國國家標準(CNS ) A4規格(210X 297公羡) _ 18 - (請先閱讀背面之注意事 •項再填· ,寫本頁) 經濟部智慧財產局員工消費合作社印製 1264745 A7 B7 — - 五、發明説明() 實施例1相同的電極箔之固體電解電容器,而成實施例 3 — 1〜3 - 4及習知例3。此等的固體電解電容器之 E S R比較値示於表2。 〔表2〕 陽極箔 陰極箔 ESR 空孔率 箔厚 空孔率 箔厚 (m Ω ) (%) (μ m ) (%) (μ m ) 實施例 2-1 26 1 00 19 85 5.0 實施例 2-2 46 1 00 39 50 6.8 實施例 2-3 η 〇 100 3 9 50 7.2 實施例 2-4 52 100 22 75 6.8 習知例 2 52 1 00 3 9 50 8.1 由表2可知,於實施例2顯示出與實施例1相同的結 果,本發明之功效即顯而可知。 (實施例3 ) 其次,製作電容器尺度爲6 . 30x6 L之表面實際 安裝用晶片型之固體電解電容器,以與實施例1同法製作 的固體電解電容器爲實施例3 - 1 ,3 - 2 ,習知例3 - 1 ,以與實施例2同法製作的固體電解電容器爲實施例3 一 3〜3 — 6 ,習知例3 - 2 ,所用的電極箔之空孔率及 本纸敗尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -19 - (請先閱讀背面之注意事項再填寫本頁 訂 經濟部智慧財1局昌(工消費合作社印製 1264745-I- m 'IT 4 Ministry of Economic Affairs Intellectual Property Bureau P' Industrial Consumer Cooperative Printing Table 1 shows an example of using the anode foil of the present invention 丄-2, 1-3' using the cathode foil of the present inventionχ A4 is lower in ESR than the conventional example. Further, the embodiment 1 - 1 which uses an anode foil having a porosity of 26% and a cathode foil of 91% is reduced to 5 · 8 m Ω ' to achieve a low E S R which has never been seen before. Further, Example 1 - 3 series E S R having an anode foil having a porosity of 33% was used, and Example 1 to 2 having an anode foil having a porosity of 4 6 % was used.豕 Paper scale applicable to China National Standard (CNS) A4 specification (210X 297 mm) -17 1264745 A7 B7 V. Inventive Note () It is also known that the hole is reduced from the conventional example to the embodiment 2 6~4 6 %, the foil resistance is reduced from 2 3 1 m Ω / ηι to 7 5~1 5 3 ηι Ω / m, the conductive portion of the electrode foil is increased, and the resistance portion is lowered. Further, in the comparative example, a capacitor element was formed in the same manner as in Example 1-1. An electrolytic solution having a low resistivity characteristic was impregnated into the capacitor element to form an electrolytic capacitor. The electrolyte used was > - butyrolactone 7 5 points, and the oxadicarboxylate key was 25 minutes. The obtained E S R system showed a enthalpy of up to 5 2 m Ω. Even when the electrode foil of the present invention was used, if the solid electrolyte having low resistivity characteristics was not used as the electrolyte, it was found that the effects of the present invention were not obtained. (Example 2) Next, an example in which P E D T was used as a solid electrolyte will be described. As for the spacer, a non-woven fabric made of a nylon fiber is used, and a layer made of titanium nitride is formed on the film to be formed on the cathode foil, and the capacitor element is formed in the same manner as in the first embodiment. Generated. Therefore, the formation of a solid electrolyte was carried out as follows. A mixture of E D T and 45 % p-toluenesulfonic acid iron in butanol was poured into a cup-shaped container to make a weight ratio of 1:0 · 8 to prepare a mixed solution. Therefore, the capacitor element was immersed in the above mixture for 1 minute. Therefore, heating at 1 20 ° C for 1 hour was carried out to cause polymerization of P ED in the capacitor to form a solid electrolytic layer. Therefore, this capacitor element was inserted into a bottomed cylindrical aluminum casing, and the opening was rubber-sealed by pultrusion to carry out an aging test to prepare a solid electrolytic capacitor of 1 〇 0 x 10 L. Therefore, the production of the Chinese National Standard (CNS) A4 specification (210X 297 羡) has been adopted and this paper scale has been adopted. _ 18 - (Please read the back of the note first; refill the item, write this page) Ministry of Economics Intellectual Property Bureau employee consumption cooperative printed 1264745 A7 B7 — - V. Inventive Note () The solid electrode electrolytic capacitor of the same electrode foil of Example 1 was formed into Examples 3 - 1 to 3 - 4 and Conventional Example 3. The E S R comparison of these solid electrolytic capacitors is shown in Table 2. [Table 2] Anode foil cathode foil ESR porosity, foil thickness, porosity, foil thickness (m Ω ) (%) (μ m ) (%) (μ m ) Example 2-1 26 1 00 19 85 5.0 Example 2-2 46 1 00 39 50 6.8 Example 2-3 η 〇 100 3 9 50 7.2 Example 2-4 52 100 22 75 6.8 Conventional Example 2 52 1 00 3 9 50 8.1 As can be seen from Table 2, in the examples 2 shows the same results as in Example 1, and the effects of the present invention are apparent. (Example 3) Next, a solid electrolytic capacitor of a wafer type having a surface of a capacitor of 6.30 x 6 L was fabricated, and a solid electrolytic capacitor fabricated in the same manner as in Example 1 was used as Example 3 - 1 , 3 - 2 , Conventional Example 3 - 1 , the solid electrolytic capacitor produced in the same manner as in Example 2 is the embodiment 3 - 3 to 3 - 6, the conventional example 3 - 2, the porosity of the electrode foil used and the paper size Applicable to China National Standard (CNS) A4 Specification (210X297 mm) -19 - (Please read the notes on the back and fill out this page to order the Ministry of Economic Affairs, Smart Finance 1 Bureau (Working Consumer Cooperative Printed 1264745)

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7 B 五、發明説明(7) 箔厚,與該等之固體電解電容器之E S R,則示於表- 3 〔表3〕 陽極箔 陰極箔 固體電 ESR 空孔率 箔厚 空孔率 箔厚 解質 (m Ω ) (%) (μ m ) (%) (μ m ) 實施例 3Ί 26 100 1 9 85 TCNQ 17.9 實施例 3-2 η 〇 J J 100 39 50 TCNQ 22.2 實施例 Ο 〇 J J 26 1 0 0 19 85 PEDT 14.3 實施例 3-4 46 100 39 5 0 PEDT 17.4 實施例 3-5 η η J J 100 3 9 50 PEDT 18.3 實施例 3-6 52 100 22 75 PEDT 1 7.4 習知例 3-1 52 1 00 39 50 TCNQ 23.7 習知例 3-2 52 100 39 50 PEDT 19.7 (請先閱讀背面之注意事項再填寫本頁 經濟部智慧財產局員工消費合作社印製 由表3可知,於實施例3之晶片型之固體電解電容器 方面,亦顯示出與實施例1 ,2相同的結果。再者採用空 孔率2 6 %之陽極箔及空孔率1 9 %之陰極箔的實施例 3 - 1 ,3 — 3與習知例3 — 1 ,3 — 2相比,E S R係 各自降低5 · 8 m Ω,5 · 4 m Ω,本發明之功效亦變大 。又對採用P E D T爲電解質之實施例3 - 3 ,較採用 T C N Q錯合物之實施例3 - 1降低3 · 6 m Ω,實現出 太纸張尺度適用中國國家標率(CNS ) A4規格(210X297公釐) -20 - 12647457 B V. Description of invention (7) Foil thickness, and ESR of these solid electrolytic capacitors are shown in Table - 3 [Table 3] Anode foil cathode foil solid electric ESR porosity ratio foil thickness porosity solution thick solution Mass (m Ω ) (%) (μ m ) (%) (μ m ) Example 3 Ί 26 100 1 9 85 TCNQ 17.9 Example 3-2 η 〇 JJ 100 39 50 TCNQ 22.2 Example 〇 〇 JJ 26 1 0 0 19 85 PEDT 14.3 Example 3-4 46 100 39 5 0 PEDT 17.4 Example 3-5 η η JJ 100 3 9 50 PEDT 18.3 Example 3-6 52 100 22 75 PEDT 1 7.4 Conventional Example 3-1 52 1 00 39 50 TCNQ 23.7 Conventional Example 3-2 52 100 39 50 PEDT 19.7 (Please read the notes on the back and then fill out the page. Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives, printed in Table 3, in Example 3 The wafer type solid electrolytic capacitor also showed the same results as those of Examples 1 and 2. Further, the anode foil having a porosity of 26% and the cathode foil having a porosity of 19% were used in Example 3-1. 3 - 3 Compared with the conventional examples 3 - 1 , 3 - 2, the ESR system is reduced by 5 · 8 m Ω and 5 · 4 m Ω, respectively, and the effect of the present invention is also increased. Example 3 - 3 using PEDT as electrolyte, and 3 · 6 m Ω lower than Example 3-1 using TCNQ complex, achieving the Chinese paper standard (CNS) A4 specification (210X297 public) PCT) -20 - 1264745

^ 18 立、發明説明() 作爲晶片型固體電解電容器之向來未曾有的E S R特性。 再者,對採用P E D T作爲固體電解質之實施例3 — 3〜 3 - 6之固體電解電容器進行波峰溫度,2 5 0 °C之無鉛 平坦化熱處理(reflow )試驗時,可知無靜電容量、· E S R之變動,可對應於無鉛重流係顯而可知的。 (實施例4 ) 其次說明採用二氧化錳作爲固體電解質之實施例。將 電容器浸漬於4 0 %硝酸錳水溶液中之後,在3 5 0 °C進 行熱處理。其後再度於予以生成液中施加電壓,進行在熱 處理中已損傷的介電體被膜之修復予以生成。數次重複此 硝酸錳水溶液浸漬,熱處理,修復予以生成。最後在 4 5 0 t進行熱處理,再度進行修復予以生成。將如此已 形成固體電解之二氧化錳的電容器元件收容於外裝外殼內 ,注入環氧樹脂使加熱硬化並予密閉,形成1 0 0 X 1 0 L固體電解電容器。因此,採用與實施例1相同的電 極箔,作爲實施例4 一 1 ,4 一 2及習知例4,所用的電 極箔之空孔率及箔厚,與此等的固體電解電容器之E S R 示於^表4。 I (請先閱讀背面之注意事項再填寫本頁) 訂 餐 經濟部智慧財產局i工消費合作社印製 本纸掁尺度適用中國國家標準(CNS ) A4規格(210Χ'297公釐) -21 > 191264745 A7 B7 五 發明説明 表4 〕 陽極箔 陰梗 豆箔 esr 空孔率 箔厚 空孔率 箔厚 (m Q ) (%) (μ m ) (%) (μ m ) 實施例4-1 26 1 00 1 9 85 14.6 實施例4 - 2 33 1 00 39 50 17.7 習知例4 52 1 00 39 50 20.1 由表4可知,於實施例4顯示出與實施例1相同的結 果,本發明之功效係顯而可知的。 且,本發明並非受上述實施例所限定者,至於纟虫刻條 件,予以生成條件等的固體電解電容器之製造條件,係可 合適選擇的。又,尤其不限於捲取型之固體電解電容器, 對層合形等亦可應用。 其次,採用有機半導體,說明已規定箔電阻係數、箔 寬、箔面積的捲取型固體電解電容器之實施例。 (實施例1 ) 說明採用T C N Q錯合物爲有機半導體之實施例。藉 由交流蝕刻使鋁箔粗面化,兩者施以爲形成介電物氧化被 膜而用的予以生成,製作本發明之陽極箔。又與鋁箔同樣 的藉由交流蝕刻予以粗面化,於表面上形成化學被膜並製 作陰極箔。於此陽極箔及陰極箔之間介在以由馬尼拉紙而 本纸張尺度適用中國國家標準(CNS ) A4規格(2丨0 X 297公釐) -22 - ml 11-! I - ·11 =- ml «—-1— * (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局P'工消t合作社印^ 1264745 A7 B7^ 18, invention description () Es R characteristics that have never been seen in wafer type solid electrolytic capacitors. Further, when a solid electrolytic capacitor of Example 3 - 3 to 3 - 6 using PEDT as a solid electrolyte was subjected to a peak temperature and a lead-free flattening heat treatment (reflow) test at 250 ° C, no static capacity was observed, and ESR was The change can be seen in correspondence with the lead-free heavy flow system. (Example 4) Next, an example in which manganese dioxide is used as a solid electrolyte will be described. After the capacitor was immersed in a 40% aqueous manganese nitrate solution, heat treatment was performed at 350 °C. Thereafter, a voltage is applied to the formation liquid again, and the dielectric film damaged by the heat treatment is repaired and generated. This manganese nitrate aqueous solution is immersed several times, heat treated, and repaired to form. Finally, heat treatment was carried out at 405 Torr and repaired again. The capacitor element in which the solid electrolytic manganese dioxide was formed was housed in an outer casing, and an epoxy resin was injected to heat-harden and hermetically seal to form a 1000 x 10 L solid electrolytic capacitor. Therefore, the same electrode foil as in Example 1 was used as the aperture ratio and foil thickness of the electrode foil used in Examples 4-1, 4-2 and 4, and the ESR of the solid electrolytic capacitors was shown. In ^ Table 4. I (please read the note on the back and then fill out this page) Ordering Ministry of Economic Affairs Intellectual Property Bureau i Industry Consumer Cooperative Printed Paper Size Standard Applicable to China National Standard (CNS) A4 Specification (210Χ'297 mm) -21 > 191264745 A7 B7 Five invention description Table 4 〕 Anode foil stalk bean foil esr porosity rate foil thickness porosity (m Q ) (%) (μ m ) (%) (μ m ) Example 4-1 26 1 00 1 9 85 14.6 Example 4 - 2 33 1 00 39 50 17.7 Conventional Example 4 52 1 00 39 50 20.1 As is apparent from Table 4, the same results as in Example 1 are shown in Example 4, and the effect of the present invention It is obvious and obvious. Further, the present invention is not limited to the above-described embodiment, and the manufacturing conditions of the solid electrolytic capacitor for forming conditions and the like for the mites can be appropriately selected. Further, it is not particularly limited to a coil type solid electrolytic capacitor, and may be applied to a laminate shape or the like. Next, an organic semiconductor is used to explain an embodiment of a coil-type solid electrolytic capacitor in which a foil resistivity, a foil width, and a foil area have been specified. (Example 1) An example in which a T C N Q complex was used as an organic semiconductor was described. The aluminum foil was roughened by alternating current etching, and both were formed to form a dielectric oxide film, and the anode foil of the present invention was produced. Further, similarly to the aluminum foil, the surface was roughened by alternating current etching, and a chemical film was formed on the surface to prepare a cathode foil. Between the anode foil and the cathode foil, the Chinese National Standard (CNS) A4 specification (2丨0 X 297 mm) is applied to the paper scale by Manila paper -22 - ml 11-! I - · 11 =- Ml «—-1— * (Please read the notes on the back and fill out this page) Order the Ministry of Economic Affairs Intellectual Property Bureau P' Gongxiao t Cooperative Print ^ 1264745 A7 B7

-- JQ 五、發明説明() 成的間隔件,於任意位置各自安裝陽極拉出端子,陰極拉 出端子並予捲取,其後,在予以生成液中施加電壓,利用 捲取可修復予以生成已損傷的介電體氧化被膜。 (請先閱讀背面之注意事項再填寫本頁) 於另一方面,於由鋁而成的圓筒形之金屬外殼內放入 T C N Q錯合物,置於於已加熱至約2 8 0 °C平面加熱器 上,使T C N Q錯合物熔融液化。於其中浸漬經予預熱至 約3 0 0 °C之前述電容器元件,立即將金屬外殼浸入冷卻 水中並使T C N Q錯合物冷卻固化。再者,於外殼內注入 所需量環氧樹脂,使在高溫氣圍氣中加熱硬化,然後,在 1 2 5 °C中於端子間施加額定電壓1小時並進行老化,而 成固體電解電容器。 因此,如此形成的固體電解電容器之實施例1 - 1〜 1 一 3、比較例1 一 1〜1 一 4所用的陽極箔及陰極箔之 箔電阻係數箔寬、箔面積、殘芯厚度與各自的固體電解電 容器之ESR示於表5。且實施例1 一 1〜1 一 3之箔厚 係各自爲 1 1 〇 μ m,1 1 5 μ m,1 4 Ο μ m。 經濟部智慧財產局S工消費合作社印製 用 適 度 尺 張 紙 -本 S N C 準 一榡 一家 « 釐 公 δ 1264745 A7 _______ B7 、發明説明(21 ) 〔表5〕 箔抵抗率 箔幅 箔面積 殘芯厚 ESR (m Ω ) (mm) (mm2) (μηι) (m Ω ). 實施例 卜1 0.40 6 1000 65 5 . 8 實施例 1-2 0.4 1 1 1 1850 64 3.9 實施例 1-3 0.25 6 800 1 02 5.7 比較例 1-1 0.89 6 1950 32 8 . 1 比較例 1-2 0.22 2 2100 119 9.8 比較例 1-3 0.40 20 3 400 65 7.1 比較例 1-4 0.17 1 5 250 145 11.2 I _ (請先閱讀背面之注意事項再填寫本頁) -裝--- 訂 由表5可顯而得知,本發明之實施例1 一 1 .〜1 一 3 之固體電解電容器係顯示出E s R在6 1Ή Ω以下的低値, 可知本發明之功效。對此,箔電阻係數在0 · 6 m Ω以上 教 之比較例1 一 1儘管箔面積爲1 9 5 〇 m m 2較實施例 1 — 1〜1 — 3大,亦成爲高至8 · ΙπιΩ之値。又范寬 在3 ni m以下的比較例1 一 2,係箔電阻係數爲〇 · 2 2 經濟部智慧財產局員工消黄合作社印製 ιώ Ω,亦較實施例1 — 1〜1 一 3低,再者儘管箔面積爲 2 10 0m m 2較實施例1 一 1〜1 — 3大,亦成爲高 至9 · 8 m Ω之値。又箔寬超過1 6 m m之比較例1 一 3 的ESR亦大至7 . 1η]Ω。再者,箔面積在3〇〇 m m 2以下的比較例1 一 4係箔電阻係數0 . 1 7 m Ω, 儘管較實施例1 — 1〜1 — 3小,E S R亦大至1 1 · 2 本纸張尺度適財關家辟KNS ) Α视格(’ 21QX297公釐) -24 - 221264745 A7 B7 經濟部智慈財產局資工消費合作社印製 五、發明説明() m Ω 〇 又於與實施例1 - 1同法形成的電容器元件內,各自 製作已浸漬具有低電阻係數特性之電解液的電解電容器作 爲比較例1 - 5 ,又製作已形成二氧化錳之電解電容器.作 爲比較例1 - 6 。已採用比較例1 一 5之電解液係^ 一丁 內酯7 5分、苯二甲酯乙基二甲基咪唑啉鑤2 5分。所得 的E S R係各自表示高至5 2 m Ω、1 7 m Ω之値,即使 採用本發明之電極箔,若不採用具有低電阻係數特性之有 機半導體作爲電解値,則未能獲得本發明之功效後可得知 的。 (實施例2 ) 其次說明採用P E D 丁爲有機半導體之實施例。至於 間隔件,採用由維尼龍纖維而成的非織物,於陰極箔方面 在予以生成被膜之上形成由氮化鈦而成的層,其他則與實 施例1同法形成電容器元件,進行修復予以生成。因此, 如下般進行有機半導體之形成,於杯狀容器內,注入 E D T及4 5 %之對甲苯磺酸鐵之丁醇溶液至重量%比或 1 : 〇 · 8 ’製備混合液。因此,將電容器浸漬於上述混 合液內1 0秒鐘。因此在1 2 0 °C加熱1小時,在電容器 元件內使發生P E D T之聚合反應,形成有機半導體層。 因此’將此電容器元件插入有底筒狀的鋁外殼內,藉由深 拉加工方式將開口部進行橡膠封口,進行老化,製作固體 電解電容器。在此所用的實施例及比較例之電極箔的箔電 (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -25 - 1264745 A7 五、發明説明(23 ) 阻係數’范寬度、箔面積、殘芯厚度及各自的固體電解電 容器之E S R係示於表6 。且實施例2 一丄〜2 — 3之箔 厚係各自爲 1 1 5 μ η!、1 1 〇 μ m 、 1 3 5 μ ηι ° 〔表6〕 箔抵抗率 箔幅 箔面積 殘芯厚 ESR (m Q ) (mm) (mm2) (μΐΏ) (m Ω ) 實施例2-1 0.4 1 6 1050 6 3 5.] 實施例2 - 2 0.40 11 1800 65 3 . 5 實施例2 - 3 0.24 6 850 105 4.9 比較例2 - 1 0.80 6 1450 30 7.2 比較例2 - 2 0.2 1 2 2 15 0 12 1 8.6 比較例2 - 3 0.40 20 3 3 5 0 64 6.5 比較例2-4 0.17 15 240 1 50 9.0 II Ϊ . · · I— S1 I] —m· ml : I— ft— 1· (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 由表6可知,於實施例2亦顯示出與實施例1相同的 結果’本發明之功效係顯而可知的。 其次採用導電性聚合物,說明已規定箔電阻係數,箔 寬、箔面積之捲取型的表面實際安裝用固體電解電容器之 實施例。 說明採用P E D 丁爲導電性聚合物之實施例,其次說 明P E D T爲有機半導體之實施例。至於間隔件,採用由 維尼龍纖維而成的非織物,於陰極箔方面在予以生成被膜 本紙張尺度適用中國國家標準(CN’S ) A4規格(210X297公釐) _ 26 - 1264745 A7 B7 — 五、發明説明() 之上形成由氮化鈦而成的層,其他則與實施例1同法形成 電容器元件,進行修復予以生成。因此,如下般進行有機 半導體之形成,於杯狀容器內,注入E D T及4 5 %之對 甲苯磺酸鐵之丁醇溶液至其重量比成1 : 0 。8 ,製備.混 合液。因此,將電容器浸漬於上述混合液內1 〇秒鐘。因 此在1 2 0 °C加熱1小時,在電容器元件內使發生 P E D T之聚合反應,形成固體電解質層。因此,將此電 容器元件插入有底筒狀的鋁外殼內,藉由深拉加工方式將 開口部進行橡膠封口,進行老化,製作固體電解電容器。 因此,如此形成的固體電解電容器實施例1〜3 ,比 較例1〜4所用的陽極箔及陰極箔之箔電阻係數,箔寬, 箔面積,殘芯厚度及各自的固體電解電容器之E S R示於 表7 。且實施例1〜3之范厚係各自爲9 5 μ m、9〇 μ m 、 12 0 μ m 。 I------^·--- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工涓費合作社印製 I紙張尺度適周中國國家標率(CNS ) A4規格(210:< 297公釐) -27^ 1264745 A7 B7 25 五、發明説明() 〔表7〕 箔抵抗率 箔幅 范面積 殘芯厚 ESR (m Ω ) (mm) (mm2) (μηι) 一 (m Ω ) 實施例1 0.55 2.2 240 50 13 實施例2 0.56 3 320 50 10 實施例3 0.34 2.2 1 70 80 __ 1 4 比較例1 0.9 1 2.2 335 3 1 17 比較例2 0.3 1 1 360 85 20 比較例3 0.32 2.2 110 84 1 9 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慈財產局員工消費合作社印製 由表7顯而可知,本發明之實施例1〜3之固體電解 電容器係表示E S R低至1 5 m Ω以下的値,可知本發明 之功效。對此,箔電阻係數在〇 . 7 m Ω以上之比較例1 儘管箔面積爲3 3 5 m m 2較實施例1 一 3大,亦成爲高 至1 7 m Ω之値。又箔寬在1 · 5 m m以下的比較例2 , 係箔電阻係數爲0 · 3 1 m Ω,亦較實施例1 一 3低,再 者儘管箔面積爲3 6 0 m m 2較實施例1 - 3大,亦成爲 高至2 0 m Ω之値。又箔面積在1 5 0 m m 2以下的比較 例3係箔電阻係數0 · 3 2 m Ω,儘管較實施例丨〜3小 ,E S R亦大至1 9 m Ω。 又’至於比較例4,5 ,與實施例1同法形成電容器 元件,於此電容器內各自形成丁 C N Q錯合物,〜e 〜氧化猛 作爲固體電解質,所得的E S R係各自表示高至q π ^ 二* 丄 7 m Ω 本紙張尺度適用中國國家標孪(CNS ) Α4規格(2Ι0Χ 297公釐) 1264745 A7 B7 —五、發明説明() ,6 1 m Ω之値,即使採用本發明之電極箔若不採用具有 低電阻係數特性之導電性聚合物作爲電解質時,則未能獲 得本發明之功效係可知的。 發明之功效 如上述般,若依本發明時,則於採用固體電解質作爲 電解質之固體電解電容器方面,藉由將電容器元件所用的 陽極箔之蝕刻後的空孔率設爲5 1 %以下,陰極箔之蝕刻 後的空孔率設爲4 4%以下,可實現出具有至目前未有的 低E S R特性之固體電解電容器。 1 - I f « 1ι·-1- ί!0 ! ·ι_ί 11 - (請先閱讀背面之注意事項再填寫本頁 訂-- JQ V. Inventive Note () The spacer is installed with anode pull-out terminals at any position, the cathode is pulled out of the terminal and pre-rolled, and then a voltage is applied to the generated liquid, which can be repaired by coiling. A damaged dielectric oxide film is formed. (Please read the precautions on the back and fill out this page.) On the other hand, put the TCNQ complex in a cylindrical metal casing made of aluminum and place it on it to about 280 °C. On the flat heater, the TCNQ complex was melted and liquefied. The foregoing capacitor element preheated to about 300 ° C was dipped therein, and the metal casing was immediately immersed in cooling water and the T C N Q complex was cooled and solidified. Furthermore, a required amount of epoxy resin is injected into the outer casing to heat-harden in a high-temperature gas enclosure, and then a rated voltage is applied between the terminals at 1 2 5 ° C for 1 hour and aged to form a solid electrolytic capacitor. . Therefore, the anode resistive foil foil, the foil area, the residual core thickness and the respective foil foils of the anode foil and the cathode foil used in Examples 1 - 1 to 1 - 3 and Comparative Example 1 - 1 to 1 - 4 of the solid electrolytic capacitor thus formed The ESR of the solid electrolytic capacitor is shown in Table 5. Further, the foil thicknesses of Examples 1 to 1 to 1 to 3 are each 1 1 〇 μ m, 1 1 5 μ m, and 1 4 Ο μ m. Ministry of Economic Affairs, Intellectual Property Bureau, S-consumer, Cooperatives, Printed with Appropriate Ruler Paper - This SNC is a « 榡 « 647 1264745 A7 _______ B7, Invention Description (21) [Table 5] Foil Resistance Foil Foil Area Residual Core Thick ESR (m Ω ) (mm) (mm2) (μηι) (m Ω ). Example 1 0.40 6 1000 65 5 . 8 Example 1-2 0.4 1 1 1 1850 64 3.9 Example 1-3 0.25 6 800 1 02 5.7 Comparative Example 1-1 0.89 6 1950 32 8 . 1 Comparative Example 1-2 0.22 2 2100 119 9.8 Comparative Example 1-3 0.40 20 3 400 65 7.1 Comparative Example 1-4 0.17 1 5 250 145 11.2 I _ (Please read the precautions on the back side and then fill out this page) - Packing --- It can be clearly seen from Table 5 that the solid electrolytic capacitor of Embodiment 1 -1 to 1 - 3 of the present invention shows E s The effect of the present invention is as low as R below 6 1 Ή Ω. In contrast, the comparative example 1 to 1 in which the foil resistivity is 0·6 m Ω or more has a height of 8 · Ι π Ω even though the foil area is 195 〇 mm 2 larger than that of the embodiment 1-1 to 1-3. . In the comparative example 1 to 2, which has a width of 3 ni m or less, the resistivity of the foil is 〇· 2 2 The Intellectual Property Office of the Ministry of Economic Affairs, the employee Xiaohuang Cooperative, printed ιώ Ω, which is also lower than the embodiment 1 - 1 to 1 - 3 Furthermore, although the foil area is 2,100 m 2 which is larger than that of the embodiment 1 to 1 to 1 - 3 , it is as high as 9 · 8 m Ω. The ESR of Comparative Example 1 to 3 having a foil width of more than 16 m is also as large as 7. 1 η] Ω. Further, the comparative example 1 - 4 series foil having a foil area of 3 mm 2 or less has a resistivity of 0.17 m Ω, although smaller than the embodiment 1 -1 to 1 - 3, the ESR is as large as 1 1 · 2 This paper scale is suitable for the wealth of KNS. Α 格 (' 21QX297 mm) -24 - 221264745 A7 B7 Ministry of Economic Affairs Zhici Property Bureau, the consumption of consumer cooperatives printed five, invention description () m Ω 〇 and In the capacitor element formed by the same method, an electrolytic capacitor in which an electrolytic solution having a low resistivity characteristic was impregnated was prepared as Comparative Example 1 - 5 , and an electrolytic capacitor in which manganese dioxide had been formed was produced. As Comparative Example 1 - 6 . The electrolyte solution of Comparative Example 1 to 5 was used for 7 5 minutes, and benzodimethyl ester ethyl dimethyl imidazolinium 2 5 minutes. The obtained ESR systems each represent a enthalpy of up to 5 2 m Ω and 17 m Ω. Even if the electrode foil of the present invention is used, if an organic semiconductor having a low resistivity characteristic is not used as the electrolytic ruthenium, the present invention is not obtained. Known after the effect. (Embodiment 2) Next, an embodiment in which P E D is used as an organic semiconductor will be described. As the spacer, a non-woven fabric made of a nylon fiber is used, and a layer made of titanium nitride is formed on the film to be formed on the cathode foil. Otherwise, a capacitor element is formed in the same manner as in the first embodiment, and repaired. generate. Therefore, the formation of an organic semiconductor was carried out by injecting a solution of E D T and 45% of a p-toluenesulfonic acid iron in butanol to a weight ratio or a ratio of 1 : 〇 8 ' in a cup-shaped container. Therefore, the capacitor was immersed in the above mixture for 10 seconds. Therefore, heating was carried out at 1 2 ° C for 1 hour to cause polymerization of P E D T in the capacitor element to form an organic semiconductor layer. Therefore, the capacitor element was inserted into a bottomed cylindrical aluminum casing, and the opening was rubber-sealed by deep drawing to cause aging to produce a solid electrolytic capacitor. The foil of the electrode foil of the examples and comparative examples used here (please read the note on the back of the page and then fill in the page) This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -25 - 1264745 A7 V. INSTRUCTIONS (23) The coefficient of resistance, the width of the foil, the thickness of the residual core, and the ESR of the respective solid electrolytic capacitors are shown in Table 6. And the thickness of the foil of Example 2~2-3 is 1 1 5 μ η!, 1 1 〇μ m , 1 3 5 μ ηι ° [Table 6] Foil Resistance Foil Foil Area Residual Core Thickness ESR (m Q ) (mm) (mm2) (μΐΏ) (m Ω ) Example 2-1 0.4 1 6 1050 6 3 5.] Example 2 - 2 0.40 11 1800 65 3 . 5 Example 2 - 3 0.24 6 850 105 4.9 Comparative Example 2 - 1 0.80 6 1450 30 7.2 Comparative Example 2 - 2 0.2 1 2 2 15 0 12 1 8.6 Comparative Example 2 - 3 0.40 20 3 3 5 0 64 6.5 Comparative Example 2-4 0.17 15 240 1 50 9.0 II Ϊ . · · I—S1 I] —m· ml : I— ft— 1· (Please read the notes on the back and fill out this page) Ordering the Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperatives Printed in Table 6 The same results as in Example 1 were also shown in Example 2, and the effects of the present invention are apparent. Next, an electroconductive polymer is used, and an embodiment in which a solid electrolytic capacitor for actually mounting a surface of a winding type having a foil width and a foil area is specified is described. An example in which P E D is used as the conductive polymer will be described, and secondly, P E D T is an example of an organic semiconductor. As for the spacer, a non-woven fabric made of nylon fiber is used, and a film is formed on the cathode foil. The paper is applicable to the Chinese National Standard (CN'S) A4 specification (210X297 mm) _ 26 - 1264745 A7 B7 — V. Invention On the explanation (), a layer made of titanium nitride was formed, and otherwise, a capacitor element was formed in the same manner as in Example 1, and repaired and produced. Therefore, the formation of an organic semiconductor was carried out by injecting E D T and 45 % of a solution of iron p-toluenesulfonate in a cup-shaped container to a weight ratio of 1:0. 8. Prepare the mixture. Therefore, the capacitor was immersed in the above mixture for 1 sec. Therefore, heating at 1 2 ° C for 1 hour causes polymerization of P E D T to occur in the capacitor element to form a solid electrolyte layer. Therefore, the capacitor element was inserted into a bottomed cylindrical aluminum casing, and the opening was rubber-sealed by deep drawing to cause aging to produce a solid electrolytic capacitor. Therefore, the solid resistive capacitors of Examples 1 to 3 thus formed, the foil resistivity of the anode foil and the cathode foil used in Comparative Examples 1 to 4, the foil width, the foil area, the thickness of the residual core, and the ESR of the respective solid electrolytic capacitors are shown in Table 7. Further, the thicknesses of Examples 1 to 3 were each of 9 5 μm, 9 μm, and 120 μm. I------^·--- (Please read the notes on the back and fill out this page). The Ministry of Economic Affairs, Intellectual Property Office, Staff and Cooperatives, Co., Ltd. Printed I Paper Scale, China National Standard Rate (CNS) A4 Specification (210: < 297 mm) -27^ 1264745 A7 B7 25 V. Inventive Note () [Table 7] Foil Resistance Foil Foil Area Residual Core Thickness ESR (m Ω ) (mm) (mm2) (μηι One (m Ω ) Example 1 0.55 2.2 240 50 13 Example 2 0.56 3 320 50 10 Example 3 0.34 2.2 1 70 80 __ 1 4 Comparative Example 1 0.9 1 2.2 335 3 1 17 Comparative Example 2 0.3 1 1 360 85 20 Comparative Example 3 0.32 2.2 110 84 1 9 (Please read the notes on the back and fill out this page) Printed by the Ministry of Economic Affairs, Zhici Property Bureau, Staff Consumer Cooperatives, as shown in Table 7, Examples 1 to 3 of the present invention The solid electrolytic capacitor is a crucible having an ESR as low as 15 m Ω or less, and the effects of the present invention are known. On the other hand, Comparative Example 1 in which the foil resistivity was 〇. 7 m Ω or more, although the foil area was 3 3 5 m 2 2 was larger than that of Example 1 to 3, and became as high as 17 m Ω. In Comparative Example 2, in which the foil width was 1 · 5 mm or less, the foil resistivity was 0 · 3 1 m Ω, which was also lower than that of Examples 1 to 3. Further, although the foil area was 366 mm 2 compared with Example 1 - 3 large, also become as high as 20 m Ω. In Comparative Example 3, which had a foil area of less than 150 m 2 , the foil resistivity was 0 · 3 2 m Ω, although it was smaller than the example 丨 〜 3 and the E S R was as large as 19 m Ω. Further, as for Comparative Examples 4 and 5, a capacitor element was formed in the same manner as in Example 1, in which a butyl CNQ complex was formed in each of the capacitors, and ~e~ oxidized as a solid electrolyte, and the obtained ESR lines each represented as high as q π. ^ 二* 丄7 m Ω This paper scale applies to China National Standard (CNS) Α4 specification (2Ι0Χ 297 mm) 1264745 A7 B7 —5, invention description (), 6 1 m Ω, even with the electrode of the invention If the foil does not use a conductive polymer having a low resistivity characteristic as an electrolyte, the effect of the present invention is not known. As described above, according to the present invention, in the case of the solid electrolytic capacitor using the solid electrolyte as the electrolyte, the porosity after etching of the anode foil used for the capacitor element is set to 51% or less, and the cathode The porosity after the etching of the foil is set to 4 4% or less, and a solid electrolytic capacitor having a low ESR characteristic which is not currently available can be realized. 1 - I f « 1ι·-1- ί!0 ! ·ι_ί 11 - (Please read the notes on the back and fill out this page.

XI 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) -29 -XI Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing This paper scale applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) -29 -

Claims (1)

1264745 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍1 第9 1 1 1 1 7 3 6號專利申請案 中文申請專利範圍修正本 民國94年9月27日修正 1 · 一種固體電解電容器,其爲使用固體電解質所形 成之電容器元件而成的固體電解電容器,其特徵爲,前@ 電容器元件之陽極箔所用的蝕刻箔之空孔率在5 1 %以τ 〇 2 _ —種固體電解電容器,其爲使用固體電解質所形 成之電容器元件而成的固體電解電容器,其特徵爲,前述 電容器元件之陰極箔所用的鈾刻箔之空孔率在4 4 %以下 〇 3 ·如申請專利範圍第1項之固體電解電容器,其中 前述空孔率係在2 0%以上。 4 ·如申請專利範圍第2項之固體電解電容器,其中 前述空孔係在1 〇 %以上。 5 ·如申請專利範圍第1項之固體電解電容器,其中 陽極箔之箔厚爲7 0〜1 8 0 μ m。 6 ·如申請專利範圍第2項之固體電解電容器,其中 陰極箔之箔厚爲5 0〜1 8 0 μ m。 7 ·如申請專利範圍第1至6項中任一項之固體電解 電容器’其中電容器元件係於陽極箔及陰極箔各自的任意 位置上安裝拉出端子,介於前述陽極箔及前述陰極箔之間 有間隔件予以捲取而成。 本紙張尺度適用中國國家標準(CNS ) A4C格(210X297公釐) — (請先聞讀背面之注意事項再填寫本頁) 訂 1264745 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 2 8 .如申請專利範圍第1至6項中任一項之固體電解 電容器,其中固體電解質係採用T C N Q錯合物。 9 .如申請專利範圍第1至6項中任一項之固體電解 電容器,其中固體電解質係採用噻吩電介質之聚合物。 1 〇 .如申請專利範圍第9項之固體電解電容器,其 中噻吩電介質係3 ,4 -伸乙氧基噻吩。 1 1 ·如申請專利範圍第1至6項中任一項之固體電 解電容器,其中固體電解質係採用二氧化錳。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X29?公釐) (請先閲讀背面之注意事項再填寫本頁)1264745 ABCD Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing VI. Application for patent scope 1 9 1 1 1 1 7 3 No. 6 patent application Chinese patent application scope amendments Amendment of September 27, 1994 1 · A solid electrolysis a capacitor, which is a solid electrolytic capacitor formed using a capacitor element formed of a solid electrolyte, characterized in that the etched foil used for the anode foil of the front capacitor element is at a porosity of 51% to τ 〇 2 _ a solid An electrolytic capacitor which is a solid electrolytic capacitor formed using a capacitor element formed of a solid electrolyte, characterized in that a porosity of a uranium engraved foil used for a cathode foil of the capacitor element is less than 44% 〇3. The solid electrolytic capacitor of the first aspect, wherein the porosity is 20% or more. 4. The solid electrolytic capacitor according to item 2 of the patent application, wherein the pores are above 1%. 5. The solid electrolytic capacitor according to claim 1, wherein the anode foil has a foil thickness of 70 to 180 μm. 6. The solid electrolytic capacitor of claim 2, wherein the foil of the cathode foil has a thickness of 50 to 180 μm. The solid electrolytic capacitor according to any one of claims 1 to 6, wherein the capacitor element is attached to the anode foil and the cathode foil at any position of each of the anode foil and the cathode foil, and is interposed between the anode foil and the cathode foil. There are spacers to be taken up. This paper scale applies to China National Standard (CNS) A4C (210X297 mm) — (please read the note on the back and fill out this page) Order 1264745 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed A8 B8 C8 D8 VI. The solid electrolytic capacitor according to any one of claims 1 to 6, wherein the solid electrolyte is a TCNQ complex. The solid electrolytic capacitor according to any one of claims 1 to 6, wherein the solid electrolyte is a polymer of a thiophene dielectric. 1 〇 A solid electrolytic capacitor according to claim 9, wherein the thiophene dielectric is 3,4-ethyleneoxythiophene. The solid electrolytic capacitor according to any one of claims 1 to 6, wherein the solid electrolyte is manganese dioxide. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X29? mm) (please read the notes on the back and fill out this page) -2--2-
TW91111736A 2001-05-31 2002-05-31 Solid electrolytic capacitor TWI264745B (en)

Applications Claiming Priority (3)

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JP2001165940A JP2002359159A (en) 2001-05-31 2001-05-31 Solid electrolytic capacitor
JP2001244630A JP4300722B2 (en) 2001-08-10 2001-08-10 Liquid level detection sensor
JP2001244529A JP2003059776A (en) 2001-08-10 2001-08-10 Solid electrolytic capacitor

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