TWI263297B - Semiconductor device having capacitor and fabricating method thereof - Google Patents
Semiconductor device having capacitor and fabricating method thereofInfo
- Publication number
- TWI263297B TWI263297B TW94145771A TW94145771A TWI263297B TW I263297 B TWI263297 B TW I263297B TW 94145771 A TW94145771 A TW 94145771A TW 94145771 A TW94145771 A TW 94145771A TW I263297 B TWI263297 B TW I263297B
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- dielectric layer
- diffusion region
- located over
- mos
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
A semiconductor device which has a capacitor is provided and includes a substrate, a metal oxide semiconductor (MOS) transistor and the capacitor. The (MOS) transistor is disposed in a MOS transistor region with a first bottom diffusion region. The capacitor is disposed in a capacitor region, and it includes a second bottom diffusion region located in the substrate, a first dielectric layer located over the second bottom diffusion region, a bottom conductor layer located over the first dielectric layer, a second dielectric layer located over the bottom conductor layer, and a top conductor layer located over the second dielectric layer. The second bottom diffusion region and the first bottom diffusion region have different conductive type. The capacitor can get different capacitance according to the thickness of the dielectric layer, and the threshold voltage (Vt) of the MOS transistor can free from the influence of the voltage provided to the capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94145771A TWI263297B (en) | 2005-12-22 | 2005-12-22 | Semiconductor device having capacitor and fabricating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94145771A TWI263297B (en) | 2005-12-22 | 2005-12-22 | Semiconductor device having capacitor and fabricating method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI263297B true TWI263297B (en) | 2006-10-01 |
TW200725797A TW200725797A (en) | 2007-07-01 |
Family
ID=37966323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94145771A TWI263297B (en) | 2005-12-22 | 2005-12-22 | Semiconductor device having capacitor and fabricating method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI263297B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI399833B (en) * | 2009-12-29 | 2013-06-21 | Taiwan Memory Company | A method of fabricating a memory capacitor |
-
2005
- 2005-12-22 TW TW94145771A patent/TWI263297B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI399833B (en) * | 2009-12-29 | 2013-06-21 | Taiwan Memory Company | A method of fabricating a memory capacitor |
Also Published As
Publication number | Publication date |
---|---|
TW200725797A (en) | 2007-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |