TWI263275B - Method of passivating of low dielectric materials in wafer processing - Google Patents

Method of passivating of low dielectric materials in wafer processing

Info

Publication number
TWI263275B
TWI263275B TW92105246A TW92105246A TWI263275B TW I263275 B TWI263275 B TW I263275B TW 92105246 A TW92105246 A TW 92105246A TW 92105246 A TW92105246 A TW 92105246A TW I263275 B TWI263275 B TW I263275B
Authority
TW
Taiwan
Prior art keywords
passivating
based low
low dielectric
dielectric materials
wafer processing
Prior art date
Application number
TW92105246A
Other languages
Chinese (zh)
Other versions
TW200305213A (en
Inventor
Dorel Ioan Toma
Paul E Schilling
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200305213A publication Critical patent/TW200305213A/en
Application granted granted Critical
Publication of TWI263275B publication Critical patent/TWI263275B/en

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  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS) and chlorotrimethylsilane (TMCS) and combinations thereof. The silicon oxide-based low-k material, in accordance with embodiments of the invention, is maintained at temperatures in a range of 40 to 200 degrees Celsius, and preferably at a temperature of about 150 degrees Celsius, and at pressures in a range of 1,070 to 9,000 psi, and preferably at a pressure of about 3,000 psi, while being exposed to the supercritical passivating solution. In accordance with further embodiments of the invention, a silicon oxide-based low-k material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.
TW92105246A 2002-03-29 2003-03-11 Method of passivating of low dielectric materials in wafer processing TWI263275B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36905202P 2002-03-29 2002-03-29

Publications (2)

Publication Number Publication Date
TW200305213A TW200305213A (en) 2003-10-16
TWI263275B true TWI263275B (en) 2006-10-01

Family

ID=37966316

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92105246A TWI263275B (en) 2002-03-29 2003-03-11 Method of passivating of low dielectric materials in wafer processing

Country Status (1)

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TW (1) TWI263275B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006026333A1 (en) 2006-06-02 2007-12-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Discharge lamp for dielectrically impeded discharges with flat discharge vessel
TWI452419B (en) * 2008-01-28 2014-09-11 Az Electronic Mat Ip Japan Kk Fine pattern mask, process for producing the same, and process for forming fine pattern by using the same

Also Published As

Publication number Publication date
TW200305213A (en) 2003-10-16

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees