TWI263275B - Method of passivating of low dielectric materials in wafer processing - Google Patents
Method of passivating of low dielectric materials in wafer processingInfo
- Publication number
- TWI263275B TWI263275B TW92105246A TW92105246A TWI263275B TW I263275 B TWI263275 B TW I263275B TW 92105246 A TW92105246 A TW 92105246A TW 92105246 A TW92105246 A TW 92105246A TW I263275 B TWI263275 B TW I263275B
- Authority
- TW
- Taiwan
- Prior art keywords
- passivating
- based low
- low dielectric
- dielectric materials
- wafer processing
- Prior art date
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS) and chlorotrimethylsilane (TMCS) and combinations thereof. The silicon oxide-based low-k material, in accordance with embodiments of the invention, is maintained at temperatures in a range of 40 to 200 degrees Celsius, and preferably at a temperature of about 150 degrees Celsius, and at pressures in a range of 1,070 to 9,000 psi, and preferably at a pressure of about 3,000 psi, while being exposed to the supercritical passivating solution. In accordance with further embodiments of the invention, a silicon oxide-based low-k material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36905202P | 2002-03-29 | 2002-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200305213A TW200305213A (en) | 2003-10-16 |
TWI263275B true TWI263275B (en) | 2006-10-01 |
Family
ID=37966316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92105246A TWI263275B (en) | 2002-03-29 | 2003-03-11 | Method of passivating of low dielectric materials in wafer processing |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI263275B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006026333A1 (en) | 2006-06-02 | 2007-12-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Discharge lamp for dielectrically impeded discharges with flat discharge vessel |
TWI452419B (en) * | 2008-01-28 | 2014-09-11 | Az Electronic Mat Ip Japan Kk | Fine pattern mask, process for producing the same, and process for forming fine pattern by using the same |
-
2003
- 2003-03-11 TW TW92105246A patent/TWI263275B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200305213A (en) | 2003-10-16 |
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Legal Events
Date | Code | Title | Description |
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MM4A | Annulment or lapse of patent due to non-payment of fees |