TWI263050B - Power current micro sensor - Google Patents

Abstract

A power current micro sensor includes a substrate, a two dimensional lattice film, and a cathode. The substrate includes pores as waveguides. The two dimensional lattice film in on top and bottom of the substrate, enabling the standing wave of the induced magnetic field to be formed. The cathode is on the two dimensional lattice film, extending through the two dimensional lattice film to the substrate. The cathode is used for measuring the Hall voltage generated by the induced magnetic field.

Description

1263050 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sensor device, and more particularly, to a power current microsensor. [Prior Art] In a conventional power device, a power current sensor, a Current Transformer (CT) is an important component for displaying current through a power device. Current comparators are used outside of electrical equipment, such as cable conductors, to monitor current and play an important role in the power supply. The current-flowing device uses a silicon steel core winding method to induce the current magnetic core in the cable to the secondary side coil, and then the secondary side coil relay protection and display device. Figures 1A and 1B show the block diagrams of a conventional current comparator. In Fig. 1A, the current transformer 100 is the outside of the cable 1 0 2 , and the comparator 1 0 0 senses the current I flowing through 1 and generates an induced current Ib by measuring the current IB. And the correspondence between the induced current IB and the current I can be used to push the current I through the cable 1 〇2. The current transformer is further connected to a digital power port 1 〇4, and the digital power is connected to the circuit breaker 108. When the power through the cable 102 is too large, the digital power cable 1 0 4 can pass through the circuit breaker 1 0 8 through the cable. 1 0 2 current, and the purpose of achieving power protection is about

Also known as protection and installation is usually passed to the field to send to the opposite phase f $ Configured in: cable 1 0 2 volume sensing relationship, 100 is 驿 1 04 flow load cut off. In addition, 1263050, as shown in Fig. 1B, the comparator 1 0 0 can also be connected to a digital meter 106 for use as a power display. The DC power supply 1 1 0 provides the power required for the digital power 1 0 4 and the digital meter 1 0 6 . However, the conventional current transformer is composed of a core element, which is not only bulky, but also susceptible to magnetic saturation and hysteresis factors. When the passing current is an alternating current, the magnetization curve of the core oscillates back and forth to form a hysteresis loop. In the AC state, the energy density in the iron core is equal to the area enclosed by the hysteresis curve. This is the net energy supplied by the power supply, and some of the energy is converted into heat loss, called hysteresis loss (hysteresis 1 〇ss ), so that the current detection is limited, and can not achieve the purpose of rapid protection and correct display. The cause of the hysteresis caused by the flow comparator will be described in detail below. « As shown in Fig. 2A, consider that the cable 1 0 2 is connected to the current line by the flux line 1 1 2 of the toroidal core of the flow vessel 1 00. The magnetization curve produced is shown in Fig. 2B. In Fig. 2B, the horizontal axis indicates that the magnetic field strength is ugly, and the vertical axis indicates the magnetic flux density /3. Since the magnetic field strength is ugly, the dispersion of magnetic flux density /3 is zero: It is known by Stoke's theorem:

Η·Η II J

[iy-H\ds=[j-ds 1263050 where / represents current density. The magnetic field strength is ugly proportional to the current/current. When the current is increased by the initial value, the magnetic flux density /3 increases along the magnetization curve a shown in Fig. 2B as the magnetic field strength increases. When the magnetic field strength/value is increased, the magnetic flux density /5 is rapidly increased due to the concentrated magnetization in the core. When the magnetization Μ reaches a certain value, the slope of the magnetization curve becomes smaller and gentler, and this is the core saturation (s a t u r a t e ). The curve of φ seems to be horizontal, but the magnetic flux density /3 still rises slowly. When the slope is at a large value, the magnetic flux density /3 is proportional to the magnetic field strength. At this time, the magnetization Μ does not increase, but if the substance used is non- In the case of a magnetic substance, the value of the magnetization Μ is zero, and the magnetic flux density / 3 is always equal to the magnetic field strength. • After the magnetization curve a is nonlinearly saturated, if the current/value _ is reduced, the magnetic field strength will return to zero, but the magnetic flux density /3 will decrease along the magnetization curve b. When the magnetic field strength / / = 0, although there is no current /, there is still residual flux density (residual flux density). When the current / is negative, the magnetic flux density /3 is zero by the magnetic field strength 5 coerctive force. Along the magnetization curve b to negative saturation, when the current / again decreases by a negative value, the extension magnetization curve c moves, and because of the positive current / back to the positive saturation point, it is found that the current I value is located between the positive and negative alternating current, the iron core The magnetization curve is between the magnetization curves b and c, and oscillates back and forth to form a return line. This is called a hysteresis loop. In the AC state, the magnetic flux density / non-magnetic field strength ugly single function 7 1263050 (single-valued function), in the iron core energy fugacity is dedicated to the area enclosed in the hysteresis curve, this is the power supply week The net energy supplied, some of which will be converted into heat loss 'this is the hysteresis loss (hysteresis 1 〇 ss ). Therefore, in order to reduce the loss, it is necessary to narrow the hysteresis loop, so the iron core is mostly a silicon steel sheet material.

When the magnetically conductive niobium steel is magnetized at the magnetic flux density point 'inner shell', it is arranged along the direction of the magnetic field, but at this time, the arrangement will be destroyed by thermal motion, and the magnetization in the magnetic conductive material will be broken. Μ will become:

M = NU tanh^ μ kT where the magnetic field acting on the atom represents Boltzmannenergy, NM represents the electron concentration, and # represents the magnetic permeability coefficient. Consider magnetization Μ and magnetization saturation strength Μ”, ratio: Μ μΗ 2μβ where L is the critical temperature. It can be seen from the above equation that when the current/rise, and the magnetic flux density of the iron core rises coldly At this time, the core temperature: Γ also rises, Γ> and continues to rise, and the magnetization of the core 下降 is reduced by thermal shock, M / Μ〃, the value drops 'this result will make the power current detected Therefore limited, and can not be more effective to achieve rapid protection and correct display purposes 0 8 1263050

The letter is longer than the cause of the instrument, and the length of the test is longer than that of the stagnation, and the sense is that it needs to be small and the medium is small, and the limit is shrinking and sometimes it is sexy. No. The flow is the same as ^. Trusted by the exhibition, t> P should be able to count the number of electrical errors k and then, for this system of measurement must show h when changing. Into the meter, the sensibility of the meter can be measured and transferred to the protection of the electric station. P is detected in the display of the number of the number of the position of the device. 1 The first shape of a type of number> JT to y The most, more Huizhi and Yiyi than to send } In the case of the difference, the intelligence needs to be like the value, the value is misunderstood, and now the desire to flow into the limit of this lag, this if / #1 electric production due to the magnetic product, the number is wrong and come to the good body letter Therefore, it is an object of the present invention to provide an electric power generator & "the device" is measured by measuring the current generated by the cable: Current size. Another object of the present invention is to provide a power current micro-sensing system for >f to measure the current through the electrical environment. Still another object of the present invention is to provide a method of manufacturing a power current micro-sensing. According to the above object of the present invention, a power current porter is provided which comprises a substrate, a one-dimensional lattice film and a lead electrode. The substrate has pores as waveguides, and the two-dimensional lattice film is located at the top and the bottom of the substrate to cause the induced magnetic field to generate standing waves in the two-dimensional lattice film. The lead-in electricity is located on the two-dimensional 曰β lattice film and extends downward through the two-dimensional lattice film 1263050 in the substrate to measure the induced magnetic field to generate one of the Hall voltages. According to another object of the present invention, a power current micro-sensing system is provided, comprising a power current micro-sensor and a driving circuit. The power current micro-sensor is used to measure an induced magnetic field generated by the electric current. The electric current micro-sensor further comprises a substrate, a two-dimensional lattice film and a lead electrode. The substrate has pores as waveguides, and the two-dimensional lattice film is located at the top and bottom of the substrate to cause the induced magnetic field to generate standing waves in the two-dimensional lattice film. The lead electrode is located on the two-dimensional lattice film and extends downward through the two-dimensional lattice film into the substrate to measure the induced magnetic field to generate one of the Hall voltages. The driving circuit is configured to drive the power current micro-sensor and convert the Hall voltage measured by the power current micro-sensor to a corresponding one of the current values. According to still another object of the present invention, a method of manufacturing a power current 1 micro-sensing benefit is proposed. First, a mask layer is formed on top of a substrate. Next, a portion of the mask layer is removed to expose a portion of the top of the substrate. Subsequently, a void for the waveguide is formed on the substrate. The next step is to remove more than 1 part of the mask layer. Next, a two-dimensional lattice film is formed on the top and bottom of the substrate: and then, a part of the two-dimensional lattice film and a part of the substrate are removed from the top of the substrate to form a contact electrode contact hole, and the contact electrode contact hole is formed by two The Victorian lattice film extends into the substrate. Further, a two-dimensional lattice film disk on the top of the substrate is connected to the electrode contact hole' to form a metal layer. Finally, a portion of the metal layer 2 is removed to form a lead electrode.电力 The power current micro-sensor according to the present invention provides better sensitivity, reduces the measurement error caused by hysteresis, and greatly reduces the volume of the detector compared with the conventional comparator. Furthermore, in accordance with the invention: 10 1263050 Power Current Microsensing 11 ' One step for measuring the current can be conveniently coupled to the digital device for further digital processing. Can be advanced [implementation] The above-mentioned defects of the current comparator have long limited the development of the power system, so we consider the physical properties of the alternating current, the solar magnetic field will be generated around the electric wire, this electricity will follow the current The waveform changes, so this waveform is changed for the fertilizer. 9 It is hoped that the material of the component can reduce its volume' and make the saturation low. Therefore, it is applied by the current semiconductor process technology, and the material is processed into a power current micro-sensing device. The power current microsensor according to the present invention utilizes the Hall effect principle in the body element to sense 'the L〇renz force due to the carrier in the motion of the magnetic field member, which is affected by the magnetic field The original current path 'accumulates the charge at both ends of the non-pressure, and the amount of charge accumulation is proportional to the concentration, mobility, and current magnetic field in the material. By measuring the Hall voltage generated, Indirect current through the cable conductor. In addition, in order to reduce the future manufacturing cost and process procedure simplification when manufacturing the power current micro-sensing according to the present invention, 矽(S i ) is used as the main material, and the electric power of the general cable wire is about 60 to 300 Hz (Hz). Supper Frequency 5 SLF electromagnetic field, so different changes are used to improve the sensitivity of the micro sensor. At the same time, combined with the micro-machine and the magnetic galvanized steel sheet, the electric current and magnetic field are concentrated and converted into a voltage signal, and the more precise magnetic field is transmitted by the amplifying circuit or the converted optical fiber signal, and the concentration of the electric charge is increased by the appropriate semi-conducting pair. The measuring device selects the magnetic field Low structure sensing and replaces it for 11 1263050 to the electric power protection or the electric meter display. The measurement principle, structure, manufacturing method, assembly configuration, and application thereof of the force current micro-sensor of the present invention will be described in detail below. I. Power Current Micro-Sensor Measurement Principle The power-current micro-sensor according to the present invention measures the current φ passing through the cable wire by using the Bishua law and the Hall effect. First, when current is passed through the cable conductor, an induced magnetic field is generated around the cable conductor according to Bishua's law. The magnitude of the induced magnetic field is a function of the current through the cable conductor. By measuring the induced magnetic field, the current through the cable is calculated. However, since the magnitude of the induced magnetic field is not easy to measure, the Hall effect is further used, that is, the power current micro-sensor is used to generate a Hall voltage in the induction field, and the Hall voltage is a function of the magnetic field. Therefore, by measuring the Hall voltage generated, and according to the function relationship between the Hall voltage and the induced magnetic field, and the relationship between the induction field and the cable lead current, the current of the cable lead can be calculated. The following is a detailed description of the relationship between cable conductor flow, induced magnetic field, and Hall voltage. 1. The relationship between the electric current and the induced magnetic field is shown in Fig. 3A and Fig. 3B. It is shown that the current through the cable conductor current 'the induced magnetic field generated around the electric wire is not electrically ax. The sense of root magnetic power says the meaning of 12 1263050. In Figure 3A, the cable conductor 102 is on the Z-axis and a current I passes. It is known that when a current flows through a conductor, in order to measure the strength of the magnetic field passing through a point on the surface of the conductor, the vector magnetic potential d is used as a reference for the total magnetic field strength value along the surface closed curve. 4π 4π R m

φ = (^Α·άΐ(\νδ) The micro-sensor is located in a small interval dl, = azdz, in the side of the cable conductor 1 〇 2, and is measured at the surrounding point P (r, 0, 0). The vector magnetic position d measured by the measurement point P is as follows:

〇Ι _ ^ dzy MQI'" L2+r2 +L

"^V(zf+,L2+r^L β = ^χ(αζΑζ) ( \ =αΦ μ0ΙΣ wb ^r1 ym , Bio-Savartlaw: R = arr - azz' dVxR = a2dz 'x(arr-a2z')= αφνάζ} 13 1263050

The distance between the equivalent measuring point P and the cable conductor 1 0 2 is r, and Γ << L L is the length of the cable conductor 1 Ο 2, and the measured density P of the measuring point P is: when, the magnetic flux

Ι0Ι f wb^ 2m\m2, A=a^ln

λ! L2 + r2 + L λ/l2 +r2 -L Therefore the symmetry of the cable conductor 1 0 2 and according to r << constant constant magnetic flux density / 3 value: β = νχΑ = αφ^-(τ The third diagram shows that if the time-varying power supply 1 1 4, the amplitude angular frequency ω, & = ^ sin is chopped to the load ζ 1 1 6, and the current I 'calculates the distance electric traction wire 1 0 2 The strong magnetic shoulder at the side r uses the generalized ampere circuit law, and the integral path c gets the wire 1 0 2 side! · The magnetic field strength is ugly. The selection of the edge is the same as the c and S 2 surfaces. The symmetry of the integral path is obtained by the constant -dl - 27ττΗφ, which is V〇 and 乂: 乂. Cable guide S i • Number: 14 1263050

V0 siru^i z For a time-varying magnetic field, the principle of conservation of charge must be satisfied, and the expression is a continuous equation, so the equation can be corrected to:

VxH

dD ~dt

[H-dl = I + per .ds

P

^D-ds-Q where p is the free charge density. This is called Maxwell's equations. According to Maxwell's equation, the resulting magnetic field strength results in the same range of S 1 or S 2 surfaces:

Ηφ=ψ^ ( 1) Δτντ-ζ The above equation (1) is the magnitude of the induced magnetic field generated when current passes through the cable conductor. The current range of electric power is about 1 ampere to 2000 amps, so the induced magnetic field range is 1 (T5 Tesla to 0.0 2 Tesla. 2. The relationship between the induced magnetic field and the Hall voltage in the motion of the component. The child will generate the Lorentz force 15 1263050 (L 〇renzf 〇rce ) due to the magnetic field. The charge will affect the original current path due to the magnetic field, so that the charge will accumulate at the two ends of the uncharged voltage. Concentration, migration; (m 〇bi 1 ity) and magnetic field strength proportional. As shown in Figure 4, the micro-sensor 200 is placed next to the wire to be tested, width W, and thickness t. A uniform drive current / is applied along the X direction of the micro-sensor, wherein the drive current is the product of the current density and the cross-sectional area. When the induced magnetic field is generated by the current of the _ wire, the induced magnetic sea is perpendicular to the x-axis direction. Passing the micro-sensor 200, and generating a vector magnetic position/ due to the magnetic couple, and generating an equal current density on the micro-sensor 200, and generating a hole or electron-direction electromagnetic force that hinders the X direction, that is, The so-called Lorentz force:

Fy = -νχβζ) ' where q is the charge charge and h is the charge rate. In order to maintain the X-direction stable micro-sensor 200, a _-direction electric field must be generated to balance the response:

Ey=vJz This effect is called Hall effect. The built-up 埸5 is called Hall field, and the relative setup difference is called Hall voltage^. The above formula can be further expressed as:

Ey-^PZ-RHJJZ qp〇 Diameter, oligopoly rate cable guide 200 /etc. cable 1 β ζ pole moment power y y side of the electricity 16 1263050

Rh = 9P 〇 where and / / is called the Hall coefficient. And Qiao "Differentially get Hall voltage corpse # ·· where L is the drive current through the sensor, point z is the cable wire on the z-axis, magnetic flux density, and # is the Hall coefficient, ^ is the micro-sensing • Thickness. Therefore, the power current microsensor according to the present invention first calculates the Hall voltage and calculates the intensity of the induced magnetism according to equation (2). Subsequently, the equation (1) is further used to calculate the current through the cable conductor. 2. Power Current Micro-Sensor Structure • FIGS. 5A and 5B are diagrams showing a power current micro-sensor device 500 according to a preferred embodiment of the present invention, wherein FIG. 5 a is a diagram showing power current彳A cross-sectional view of the sensing 500. The power current microsensor 500 according to the present invention comprises a substrate 5! 〇 ', and a lead electrode 5 3 〇. The substrate 5! 具有 has an aperture 54 用以 for use as a waveguide. The two-dimensional lattice film 520 is located on the top and bottom of the substrate 510 to cause an induced magnetic field to generate standing waves therein. The lead electrode 530 is located on the two-dimensional lattice film 520 and extends through the two-dimensional lattice film 520 down into the substrate 510. The lead electrode is used to measure the induced magnetic field generated by the electric current. The Hall voltage generated by the power current micro-sensor 5 〇 12 17 1263050. Using the power current micro-sensor device 5, the induced magnetic field in the measurement is vertically passed through the lead-in electrode 1553 to be connected to the electrode 53. Measuring the Hall Electric Power generated by the induced magnetic field 522, Figure 5B shows the power current micro-sensor according to the present invention. The power current micro-sensor according to the present invention, preferably 5

Measure..., other shapes such as rectangles. Power current micro-sensing can be used - fixed money drive circuit or - constant current drive circuit plus * move. The two-dimensional lattice film 520 is located at the top and bottom of the substrate 51, respectively, and is a top two-dimensional lattice film 52 〇 and a bottom two-dimensional crystal film 52 〇, which are used to: generate electricity, and induce an electric field generated by current. A standing wave is formed in the two-dimensional lattice film to prevent the induced magnetic field from entering and exiting the micro-sensor 5 〇〇. The two-dimensional lattice film 520 may be, for example, a ceria layer, which may be formed by chemical vapor/inclusion (CVD), plasma enhanced chemical vapor deposition (pECVD), or φ other semiconductor processes. The induced magnetic field generated by the electric current can form a standing wave in the two-dimensional lattice film 5 2 ,, because in a general crystal, the monthly color of the electromagnetic coupling field can be quantized, and its energy quantum is called an electromagnetic coupling field. Quantum. In the two-dimensional lattice film 520, the quasi-two-dimensional M-wave dipole is called a transverse optical, also called a surface electromagnetic phonon. In theory, the surface electromagnetic phonon will be combined with the electromagnetic field to form a field quantum, that is, a surface polarition of the surface electromagnetic coupling field. 18 1263050 5 2 0 Dielectric system As shown in Figure 6A, the number of two-dimensional lattice films is 6, and the electromagnetic field travels along the z-axis: £

=£11

Here, the X-axis dielectric coefficient ' represents a number, ~ represents a parallel dielectric constant, 匕 represents a number, and q represents a vertical dielectric constant. As shown in Fig. 6B, assuming that the transverse magnetic magnetic wave, TM) propagates along the X-axis, the electromagnetic coupling quantum of the surface of the wave surface is exponentially attenuated, and the substrate 510 of the medium I is an attenuation field. However, it is not a decay field in the dielectric film 520. According to Maxwell, the electromagnetic wave is difficult in the two-dimensional lattice film 520, because the magnitude of the induced magnetic field through different dielectric induced magnetic fields will change. Therefore, after the base two-dimensional lattice film is turned on, the actual field size of the substrate will change. Therefore, the field size of the equation (1) needs to be corrected. The following describes how to enter the substrate 5 1 0 into the substrate. The size of the magnetic field takes into account the time constant function of the induced magnetic field in the continuous sense of the electric current. The continuous magnetic condition of the electro-oscillation current can be used. The very low frequency of the fixed frequency string 6 0~3 0 0 Hz (Η z ) can be used. , SLF) electromagnetic field. Considering the same wave, eliminating the phase mismatch phenomenon, and not considering the y-axis dielectric system z-axis dielectric wave (transverse vector K), K" algebra, z-axis thick air and medium Π two-dimensional lattice In the thin equations, f can form a standing wave field. When the interface is qualitative, the magnetic field obtained by depositing 5 1 0 on the plate 5 10 is calculated by the two-dimensional crystal field to form the boundary field of 500, which has a cycle. Description, about (Supper Low shape and power frequency considering the power current micro-sensing 19 1263050 rate is different from the frequency of the electromagnetic field detected by the detector 500 and the Doppler effect at the power source. Detector 5 0 0 on: V2Ax - μσ

▽ • = 0

In free space: On the interface: —XVX ylj = — xVxA2 ▽ · 乂2 = 0 μ μ〇 From the above equation, the vector magnetic bits on the power current micro-sensor 500 and the interface are equal and continuous. . As shown in FIG. 6C, considering the phenomenon of discontinuity at the interface between the two-dimensional lattice film 520 and the substrate 5 10 /3 vector and / / vector in different physical discussions, a two-dimensional lattice film 5 2 0 is shown. The magnetic permeability coefficient, / 2, the magnetic permeability coefficient, Η 1 indicates the size of the magnetic field entering the two-dimensional lattice film, Η 1 indicates that the induction into the substrate 5 10 is due to the /3 field with no divergence characteristics, so we can The normal component of /3 is continuous. β\η = βΐη β\= Ρ\Η\ 5 βΐ = /^2^2 Μ\^\η = ΜΐΗ2η In the closed path a, b, c, d integral path, free space characteristic material, whether it occurs #1 indicates the magnitude of the induced magnetic field of the substrate 5 1 0 5 2 0. Solution on the interface, let bc(Ah) 20 1263050

\Hdl = HrAW + H2 (~ AW) = JmsAW

Hu 一Η it S 0 / The current density αη2Χ[Η' - H2) = Jn A \rn) in the boundary of the vertical boundary C. In the Efe surface, the value of the r field is limited to 4 magnetic. Should be connected to the inductance of the uneven surface: when the flow is present, the induced magnetic field at the interface will produce a two-dimensional lattice film 5 2 0 and the substrate 5 1 0 conductivity, so the current at the interface is only the body current, people will not have 3 and ^ The second 〇 'in the power current micro-sensor 5 〇〇 7 line direction component is continuous. Η2 ήηα2 = Hx sina^ tana〇 On the substrate 5 1 0 / tmax μλ f, the induced magnetic field is good as follows: H2 :=^ι f \ 2 sin2 ax + —cosax \^2 )

Yl (3) Therefore, when measuring the electrode current of the substrate, the first step is to use the Hall voltage measured by the reference, and substitute the induced magnetic field at the 5 1 0 in the equation (2). 2. The receiver's inductive magnetic 21 1263050 field H2 is substituted into equation (3), and the electric field γ, 隹λ, and her induced magnetic field Η from the clothing into the one-dimensional wafer film 520. Subsequently, the spleen generation θ ^ substitutes the value of the induced magnetic % 代 into the equation 1 ), and the current through the cable can be obtained. The diode 530 is used to measure the magnitude of the Hall voltage generated when the power current micro-sensor 500 is placed in the induced magnetic field generated by the present invention. The lead electrode 530 is located on the top two-dimensional crystal film 52A and extends downward through the top two-dimensional lattice film 52 to the substrate 51A. Lead electrode 53 can be

A metal of conductive nature, such as copper, aluminum, or the like. Among them, the lead electrode 530 is preferably made of aluminum, which has a low electrical resistivity and adheres well to the cerium oxide, and has advantages such as a simple process. The lead electrode 530 can be formed by electroplating or other semiconductor processing. Further, in the substrate 510, a plurality of circular apertures 54 as waveguides are provided. Since the induced magnetic field is between 60 and 3 〇〇Ήζ, the circular aperture is used, and the cut-off frequency is used to cut the sensing range after a certain value.

It is known that in a circular aperture and the electric field strength must satisfy the magnetic resonance strength of the following time harmonic ▽ 2 ugly kiss = 〇 consider a circular uniform cross-sectional face as shown in Figure 7, the hole axis on the Z-axis, the induced magnetic field / / is the sum of the lateral component and the axial component.

H^HT+a2H

" Z

E=zET+azE z z 22 1263050 (/c)rM01

Wtm01 _ 0.383 αΛ[με

(Hz) where Η and Γ represent the two-dimensional transverse component of the inductive magnetic field and the electric field. ο Within the aperture: transverse electromagnetic waves (t r an s 1 verse el | e c 1 tro mag n e t i c W ave, TEM) are not considered. Only transve rse magn etic wave 5 TM and transverse wave (tr an sv er see 1 ectric wav e, TE) are considered in the pores: 5 for the transverse magnetic wave, j Hz =0 , Ez 0 , all Field component & = :E °er- zc Z For transverse waves and -a- Ez =0, Hz 0 , all field components A = • Η VZ 〇 If the aperture radius is a, with the z axis as the central axis, around it The J 11 • 8 n-type germanium semiconductor, the cutoff frequency (fc) of the transverse magnetic wave and the transverse electric wave in the circular waveguide is as follows: Transverse magnetic mode (TM) cutoff frequency (/c): • Transverse mode (TE) ) cutoff frequency (fc): (Hz) ... _ (hhEu _ 0.293 sensor measurement target value is 60Hz, guided wave mode propagating in the pore: (fc) TEu = 60, so by the above formula, and According to the target value of the power current micro-sensor 500 measured, 60 Hz, the calculated aperture 540 of the waveguide aperture 540 is preferably 12 1263050, and the aperture radius is 141 μm. The aperture 540A at the top of the substrate 5 10 is designed as Having different depths, preferably 25 microns, 35 microns, 45 microns or 5 5 microns. The pores at the bottom of 5 1 0 5 4 0 B, preferably 1 μm. The pores 5 4 〇 can be formed by Inductively Coupled Plasma (ICP). The technology is formed. In addition to the waveguide 540, it also has the function of improving the sensitivity of the power current micro-sensor Φ 500. The sensitivity of the power current micro-sensor 500 is known. \qt where G is the Hall coefficient, and the heart is Hall. The voltage, 夂 is the current through the , direction, the induced magnetic field is passed through, ... is the concentration of the carrier through which it is passed, “What is the thickness of the electric current micro-sensor 5 〇〇. • From the above formula, when the power is The thickness of the current micro-sensor 500 is smaller, and the measured Hall voltage is larger, and the sensitivity is also increased. Therefore, the aperture 54 formed in the substrate 51 can be used not only as a waveguide but also as a waveguide. The thickness of the substrate 510 is used to increase the sensitivity of the power current micro-sensor 5. The substrate 510 is preferably composed of germanium, and may be other semiconductor materials such as indium nitride (InSb) or gallium arsenide (GaAs). Thickness of the substrate Preferably, the ground is about 525 microns, and preferably, the substrate 51 is reduced in thickness by less than a micron by the aperture 54 , to improve the sensitivity of the power current micro-sensor 500, and the manufacture of the power current micro-sensor Method 24 1263050 The present invention also proposes a system for producing a power current micro-sensor, which is a flowchart of the manufacturing method of the power current micro-sensor according to the present invention. ^, a mask layer is formed on top of a substrate (step 802). A portion of the mask layer is removed to expose a portion of the top of the substrate (step 804). The pores are formed on the substrate as a waveguide (step 806). The next step is to remove the rest of the mask layer (steps 8〇8). Next, a two-dimensional lattice film is formed on the top and bottom of the substrate (step 8 1 〇 ). Subsequently, a portion of the two-dimensional lattice film and a portion of the substrate at the top of the substrate are removed to form a contact electrode contact hole (step 812), and the contact electrode contact hole is extended into the substrate by the two-dimensional lattice film. Further, a two-dimensional lattice film on the top of the substrate contacts the contact hole of the electrode to form a metal layer (step 814). Finally, a portion of the metal layer is removed to form a landing electrode (step 816). BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9A to FIG. 9F are cross-sectional views showing a method of manufacturing a power current microsensor according to a preferred embodiment of the present invention. First, as shown in FIG. 9A, a mask layer 9〇2 is formed on the top of the substrate 900. The substrate 9 is preferably, for example, a substrate of a crystal orientation <1〇0>. The mask layer 9 is used as a mask for the subsequent formation of the apertures 906, preferably for example cerium oxide (S i Ο 2 ), preferably having a thickness of about 1 2 〇〇〇 (human) . Mask layer 902 can be formed by chemical vapor deposition (cvD) or plasma enhanced chemical vapor deposition (PECVD), or other conventional semiconductor processing techniques. A portion of the mask layer 9〇2 is then removed to form a sensing region 904. The step of forming the sensing region 904 can be formed, for example, by applying a layer of photoresist on the layer 902 1263050 layer 902 and developing the photoresist by using a mask to form a mask layer of the sensing region 904. On the 902, there is no photoresist, and the mask layer 902 of the sensing region 904 is removed by conventional wet etching or dry etching. Subsequently, as shown in FIG. 9C, a circular aperture 906 as a waveguide is formed at the top of the substrate 9000 below the sensing region 904, and at the bottom of the entire substrate 9000. It is 1 1 · 2 μm. The depth of φ and the top pores 9 0 6 A is preferably 25 μm, 35 μm, 45 μm or 5 5 μm. The depth of the bottom pores 9 0 6 B is preferably 100 μm. The voids 906 can be formed by inductively coupled etch (ICP) or can be formed using other semiconductor etch techniques. * The mask layer 9 0 2 is subsequently removed. Next, a two-dimensional lattice film 908 is formed on the top and bottom of the substrate 90. The two-dimensional lattice film is preferably composed of cerium oxide and has a thickness of preferably 1,200 Å. ^ Subsequently, as shown in Fig. 9D, the top two-dimensional lattice film 9 0 8 A outside the sensing region 904 is partially etched with the substrate 9000 to form the spigot electrode contact well 910. The lead electrode contact well 910 can be formed by wet etching, for example, isotropic etching using potassium hydroxide (KOH). The depth of the lead electrode contact well 910 is preferably 60 microns. Next, as shown in Fig. 9E, a conductive metal layer 9 1 2 is deposited on the top two-dimensional lattice film 90 8 A and the contact electrode contact well 9 10 . The metal layer 9 1 2 is preferably made of aluminum, and has a thickness of preferably 26 1263050 of 560 angstroms, which can be formed by evaporation. In addition, after depositing the metal layer 912, a tempering step can be performed to enhance the ohmic contact of the metal layer to reduce the depletion. The tempering step can be carried out, for example, in a high temperature furnace at 400 degrees Celsius.

Next, as shown in Fig. 9F, a portion of the metal layer 9 1 2 is removed to form the lead electrode 914. The metal layer 9 1 2 may be partially etched by a mixed solution of nitric acid (ΗΝ〇3), acetic acid (ch3cooh), acid (η3ρο4) and water to form the lead electrode 9 1 4 . Fourth, the power current micro-sensor configuration 10th to 10th is a power current micro-sensing system, illustrating the use of the power current micro-sensor according to the present invention, configured in a cable, For current measurement through the cable. As shown in FIG. 10A, the power current micro-sensing system 100 according to the present invention includes a power current micro-sensing component 1001 and a driving circuit 1020. The driving circuit 1020 is fixed to the power current micro-sensing component 1001 for providing a circuit required to drive the power current micro-sensing component 100. As shown in Fig. 10B, the power current micro-sensing component 1 0 1 0 is wound and fixed on the cable 1 〇 90 to be measured by the fixing tape 1 0 3 0 . The fixing tape 1 0 3 0 may be, for example, a double-sided coated ferromagnetic magnetic conductive coating or a magnetically conductive steel strip. Figure 10C shows a partial enlarged view of the power current micro-sensing component 1 0 1 0 and the drive circuit 1 0 2 0. At the bottom of the power current micro-sensing assembly 1010 is a fixed strap hole 1012 through which the strap 1 0 30 is passed. Thereby, the power current micro-sensing group 27 1263050 1010 and the driving circuit 1020 can be fixed to the cable 1090. In addition, the power current micro-sensing component 1001 and the bottom of the driving circuit 1 0 2 0 have a heat insulating spacer 1040. The heat insulating gasket 1040 can be, for example, a ceramic heat insulating gasket for isolating the heat energy generated by the cable 1 0 90 to prevent damage to the power current micro-sensing component 1 0 1 0 and the driving circuit 1 0 2 0.

10D and 10E are respectively a perspective view and a cross-sectional view of the internal structure of the power current micro-sensing component 100. The power current micro-sensing component 1 0 1 0 is composed of a power current micro-sensor 1 0 1 4 and a magnetic conductive silicon steel sheet 1 0 16 . The magnetically conductive silicon steel sheet 1 0 16 further prevents the induced magnetic field generated by the cable 1 0 90 from attenuating before entering the power current micro-sensing component 1 0 1 0. Figure 10F is a block diagram of a circuit of a power current micro-sensing system 100 in accordance with the present invention. The power current micro-sensor 1 0 1 4 is driven by the driving circuit 1 0 2 0, and the driving circuit 1 0 2 0 can be, for example, a constant current driver or a certain voltage driver. The power current micro-sensor 1 0 1 4 is further connected to a gain amplifier 1 0 2 2 for amplifying the measured Hall voltage signal, and the amplified Hall voltage signal is further transmitted to an analog/digital Converter 1 024 for analog/digital conversion. Subsequently, the Hall voltage converted to the analog signal is transmitted through the fiber optic transmission interface 1026 to the programmable electric or digital meter via the optical fiber 102. FIG. 10G is a circuit block diagram, further illustrating the root 28 1263050. The power current micro-sensing system 1 according to the present invention is coupled to a programmable battery 1 0 5 0 or a digital meter 10 7 0. When the power current micro-sensing system 1 0 0 0 is coupled to the programmable voltage 1 0 5 0, it can be used for circuit protection. The DC power supply 1 0 5 1 provides the power source required for programmable power supply 1 0 5 0. The current supplied by the DC power supply 1 0 5 1 is input to the programmable battery 1 0 50 through an input interface 1052. The digital Hall voltage signal from the power current micro-sensing system 1 0 0 is transmitted to the optical fiber transmission interface 1 〇 5 3 of the programmable battery 1 0 50 and transmitted to the microprocessor 1 0 5 4 for processing. . The microprocessor 1 0 5 4 provides a time signal from the timer 1 0 6 2 and has a memory 1056 for storage. It can be transferred to the panel display unit 1 〇 5 5 for display. In addition, the programmable battery 1 0 5 0 has a controller 1 0 5 7 and a keyboard 1 0 5 8 so that the user can enter. In addition, an additional input device 1059 and an additional output device 1060 may be further provided, and the input/output interface unit 1061 communicates with the microprocessor 105. In addition, the power current micro-sensing system 100 can also be connected to a digital meter 1 0 7 0 to display the magnitude of the current through the power. The DC power supply 1 0 5 1 provides the required power source for the digital meter 1 0 7 0 via the input interface 1 0 7 2 . The current supplied by the DC power supply 1051 is input to the digital meter 1 0 7 0 through an input interface 1072. The digital Hall voltage signal from the power current micro-sensing system 1000 is transmitted to the optical fiber transmission interface 1 0 7 3 of the digital meter 1 0 7 0 and transmitted to the microprocessor 29 1263050 1 0 7 4 deal with. The microprocessor 1 0 7 4 provides a time signal from the timer 1 0 7 9 and has a storage memory 1 0 7 6 . It can be transferred to the panel display unit 1 0 7 5 for display. In addition, the digital meter 1 0 7 0 has a controller 1 0 7 7 and a keyboard 1 0 7 8 so that the user can input. V. Power Current Micro-Sensor Application For various power protection types, there are different wiring and protection devices. In order to understand the application of the power current micro-sensor according to the present invention, the following applications will be listed, including the current main Protection of power equipment, but here only the AC protection example, this product can still be matched with the DC power supply line type, connecting various types of electric rafts and electricity meters. Application Example 1: General line overcurrent and ground protection General lines include transmission lines, When various types of functions such as transmission and distribution lines and distribution lines are classified, and the voltage levels are different, the protection design must consider the characteristics, structure, length and relative factors of the line to determine the protection type, but whether it is directional or non-directional. Directional, transient overcurrent or delayed overcurrent, ranging or grounding must be combined with the current transformer to sense the fault current. As shown in Figure 1, the power current micro-sensing system 1110 30 1263050 is configured on the power cable 1 1 2 0 to measure the current passing through and to protect the cable 1 120 from overload protection. The current measured by the power current micro-sensing system 1 1 10 is transmitted to a protective power port 1 2 0 0 via the optical fiber 1 1 40. The protective switch 1 2 0 0 is connected to the circuit breaker 1 1 50, so that when the current through the cable 1 1 2 0 exceeds the load, it can be cut off and protected.

The power supply 1 1 60 provides a source of power required to protect the power supply through the input interface 1 2 0 2 . The measurement signal from the power current micro-sensing system 1 1 1 传递 is transmitted to the optical fiber transmission interface 1 2 0 4 of the protection battery 1 2 0 and transmitted to the microprocessor 1 2 0 6 for processing. The microprocessor 1 2 0 6 provides a time signal from the timer 1 2 0 8 and has a memory 1 2 1 0 for storage and can be passed to the panel display unit 1 2 1 2 for display. In addition, the protection device 1 2 0 0 has a controller 1 2 1 4 and a keyboard 1 2 1 6 so that the user can input. Further, an additional input device 1218 and an additional output device 1220 can be further provided, and the input/output interface unit 1222 communicates with the microprocessor 1206. Application example 2: Transformer protection Power transformer is an important equipment in power equipment. It is applied to various voltages and capacities, and has different connection methods according to requirements and functions. Therefore, the wiring method of the migrants must be adjusted according to various conditions, but According to the power current micro-sensing system of the present invention and 31 1263050, there is no such influencing factor, and the protection and display functions can be achieved through the programmable device. Figure 1 1 B is a block diagram showing the circuit of the power current micro-sensing system 1 1 1 0 in combination with the protection device 1 2 0 0 for protecting the Y-Δ wiring transformer 1 1 2 2 according to the present invention. The power current micro-sensing system 1 1 1 0 is mounted on the Y-Δ wiring transformer 1 1 22 to protect the Y-Δ wiring transformer 1 122 from overload. If a conventional current comparator is used, it must be set to △ - Y in conjunction with the transformer wiring, and then protected by the differential current coil action in the protection battery, but it will be affected by the current matching deviation rate. However, the power current micro-sensing system 1 1 1 0 according to the present invention transmits to the protection device 1 2 0 0 via the optical fiber 1 1 40, which can reduce the error action caused by the matching deviation rate. Application example III··The generator protects the generator and has different motive power modes such as hydraulic power, firepower, nuclear energy, natural gas and fuel oil, but only in terms of the protection principle of the generator, it is basically the same, the flow controller is here. Applications can be differential, overload, loss of magnetism and grounding. Figure 11C is a block diagram showing the circuit of the power current micro-sensing system 1 1 1 0 in combination with the protection device 1 2 0 0 for protecting the generator 1 1 2 4 in accordance with the present invention. The power current micro-sensing system 1 1 1 0 is installed in the generator Π 2 4 to protect the generator 1 1 2 4 from 32 1263050. In the conventional technique, the internal winding of the generator can also be distinguished by γ connection and △ connection, so the current comparator must also be adjusted in accordance with the connection method. However, the power current micro-sensing system 1 1 1 0 according to the present invention can not only reduce the matching error rate, but also achieve sensitive operation and light volume.

Application example 4: Busbar busbar protection Busbar busbar (BUS) connects the load and the transmission line to one point. Therefore, if the busbar busbar fails, its fault current is usually weaker than other fault currents. A ring, so it is often necessary to quickly isolate the fault to reduce the degree of fault loss to maintain the stability of the system. In the conventional art, differential protection is a commonly used busbar busbar protection. However, due to factors such as the number of return lines and the degree of saturation of the comparator in the case of external faults, differential protection causes problems, and therefore external faults often occur. The correct differential current is malfunctioning. FIG. 1 1D is a block diagram showing the circuit of the power current micro-sensing system 1 1 1 0 according to the present invention combined with the protection power 驿 1 2 0 0 for protecting the bus bar 1 1 2 6 . The power current micro-sensing system 1 1 1 0 is mounted on the bus bar 1 1 2 6 to protect the bus bar 11 2 6 from overload. According to the power current micro-sensing system of the present invention, the deviation rate of the saturation of the magnetic 33 1263050 can be reduced, the variation ratio of the suppression and the comprehensive adjustment of the microprocessor can reduce the previous error behavior, and the transmission by the optical fiber can reduce the derivative due to the connection reactance. Impedance matching problem. Application example 5: Capacitor protection In the power distribution system and the load end of the power system, the effective power is often reduced due to the inductive φ load, and thus the voltage at the power receiving end is floating. Therefore, a capacitor is often added near the load fluctuation side to stabilize the voltage. Invalid power loss increases system power factor, etc. As shown in Fig. 1 1 E, the power current micro-sensing system 1 1 1 0 according to the present invention can also be applied to the electric-container 1 1 2 8 in combination with the protective electric 驿 1 2 0 0. According to the power current micro-sensing system 1110 of the present invention, the capacitor can be effectively protected to make the power supply quality more complete. I The power current micro-sensor according to the present invention is compact in size, has no hysteresis loop and hysteresis loss, and can be directly fixed on the side of the wire and cable, and transmits digital signal or fiber signal, combined with a new programmable digital position. Display and protect devices to a complete system architecture. While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The objects, aspects and advantages of the present invention will be better understood from the following detailed description of the preferred embodiments of the invention. At the same time, reference is made to the following drawings of the present invention: Figs. 1A and 1B are block diagrams showing the configuration of a conventional art current comparator and an electric power meter and an electric meter, respectively. Figure 2A is a schematic diagram showing the magnetic field lines of the induced magnetic field generated when the current passes through the cable. Figure 2B is a graph showing the relationship between the magnetic field strength of the induced magnetic field and the magnetic flux density. Figures 3A and 3B illustrate a schematic diagram of the magnitude of the current through the cable. Figure 4 is a schematic diagram showing the generation of a Hall voltage in an induced magnetic field by a power current microsensor according to the present invention. Figure 5A is a cross-sectional view of a power current microsensor in accordance with the present invention. Figure 5B is a top plan view of a power current microsensor in accordance with the present invention. Figure 6A is a schematic diagram showing the induction magnetic field passing through a two-dimensional lattice film. Figure 6B is a schematic diagram showing the generation of a standing wave by an induced magnetic field in a two-dimensional lattice film. Figure 6C is a schematic diagram showing the variation of the induced magnetic field between the two-dimensional lattice film and the base 35 1263050. Figure 7 is a schematic diagram showing the apertures in the power current microsensor as waveguides. Figure 8 is a flow chart showing a method of manufacturing a power current micro-sensor according to the present invention. 9A to 9F are cross-sectional views showing a method of manufacturing a power current microsensor according to a preferred embodiment of the present invention. 10A to 10E are diagrams showing the arrangement of a power current microsensor according to the present invention on a cable. Figure 10F is a block diagram of a power current micro-sensing system in accordance with the present invention. Figure 10G is a block diagram showing the circuit of a power current micro-sensing system coupled to a programmable electronic or digital meter in accordance with the present invention. 11A through 11E are circuit block diagrams showing various applications of the power current micro-sensing system in accordance with the present invention. [Simple description of component symbol] I 0 0 : Current transformer 102, 1120 : Cable 104 : Digital power 106 : Digital meter 108 : Circuit breaker II 0 : DC power supply 36 1263050 112 : Magnetic line 114 : Time-varying power supply 2 00, 5 00, 1014: power current micro-sensor device 510, 900: substrate 520, 902: two-dimensional lattice film 5 30: lead electrode 540 ' 540A, 540B: pore

904: Sensing area 9 06, 906A, 9 0 6B: Pore 9 1 0: Lead electrode contact well 912: Metal layer 9 1 4: Lead electrode 1 0 0 0: Power current micro-sensing system 1 0 1 0 : Power Current micro-sensing component 1 0 1 2 : Fixed hole 1 0 1 6 : Magnetically conductive silicon steel sheet 1 020: Drive circuit 1 022 : Gain amplifier 1 024 : Analog/digital conversion 1 026 : Optical fiber transmission interface 1028, 1140: Optical fiber 1030: fixing strap 1 040 : heat insulating spacer 1 05 0 : programmable electric power 37

1263050 1 0 5 1 : DC power supply for 1052' 1072: Input 1053, 1073: Fiber 1054, 1074: Micro 1055, 1075: Panel 1056, 1076: Memory 1057, 1077: Control 1058, 1078: Keyboard 1 05 9 : Extra Input Pack 1060: Extra Output Pack 1061: Input/Output 乂1062, 1079: Timing 1 070: Digital Meter 1090: Cable 1 1 1 0 : Power Current Micro 1120: Power Cable 112 2 : Υ - △ Wiring Change 112 4 : Generator 112 6: Bus bar 112 8 : Capacitor 1 1 4 0 : Fiber 1150: Circuit breaker 116 0: Power supply 1 200 : Protection device interface interface Transfer device display unit body device placement - surface unit Sensing system pressure device 38 1263050

1202: Input 1204: Fiber 1206: Micro 1208: Timing 1 2 1 0: Memory 1 2 1 2: Panel 1 2 1 4 : Control 1 2 1 8 : Extra 1 2 20 : Eve 1222: Input interface interface Processor body display unit input and output device/output interface unit

39

Claims (1)

1263050 Picking up, patent application scope ——1 · A kind of electric current and micro sensor is generated by measuring one of the lightning currents by one of 7=3⁄4庵2: and JLH, 觅, f The power current micro-sensor comprises at least: the motor-substrate' has a plurality of apertures as waveguides; the one-dimensional lattice film is located at the top and bottom of the substrate, Generating a standing wave in the two-dimensional crystal film; and a lead electrode on the two-dimensional lattice film and extending downward through the two-dimensional lattice film into the substrate to measure the The induced magnetic field produces a Hall voltage. 2_ The power current micro-sensor of claim 1, wherein the substrate is made of tantalum. Φ 3 The power current micro-sensor of claim 1, wherein the substrate is composed of InSb. 4. The power current micro-sensor of claim 1, wherein the substrate is made of gallium arsenide (GaAs). 5. The power current micro-sensor of claim 1, wherein the substrate has a thickness of substantially 525 microns. The power current micro-sensor of claim 1, wherein the apertures have a radius of substantially 11.2 microns. 7. The power current micro-sensor of claim 1, wherein the apertures are located on top of the substrate. 8. The power current micro-sensing device according to claim 7, wherein the holes are located at the top of the substrate between the lead electrodes. 9. The power current micro-sensor of claim 7 wherein the depth of the apertures at the top of the substrate is substantially about 35 microns. _ 1 0. The power current micro-sensor of claim 1, wherein the holes are located at the bottom of the substrate. 11. The power current micro-sensor of claim 10, wherein the apertures at the bottom of the substrate have a depth of substantially about 100 microns. 1 2. The power current micro-sensor of claim 1, wherein the two-dimensional lattice film is composed of cerium oxide. 1 3. The power current micro-sensing 41 1263050 according to claim 1, wherein the thickness of the two-dimensional lattice film is substantially about 12 14 14 · as in the first patent scope The power current micro-sensor, wherein the a plurality of lead electrodes are made of metal. 15. The power current micro-sensor as described in item (4) of the scope of (4), in which the lead electrodes are made of aluminum. Φ 16. The power current micro-sensor of claim 1, wherein the power current micro-sensor is substantially cruciform. π. The power current micro-sensor described in (4), (4), wherein the power current micro-sensor is driven by a certain current driving circuit, and the power current micro-sensing system is The system is configured to detect a current through a cable, the power current micro-sensor system comprising: at least one power current micro-sensor for measuring an induced magnetic field generated by the current of the cable, the power The current micro-sensor comprises: a substrate 'having a plurality of apertures as a waveguide; a two-dimensional lattice film located at the top and bottom of the substrate to cause the induced magnetic field to generate a standing wave in the two-dimensional lattice film A lead electrode is located on the two-dimensional lattice film, 1263050 system, wherein the substrate is composed of Shi Xi. 25. The power current micro-sensing system according to claim 8, wherein the substrate is made of indium bismuth (InSb). 26. The power current micro-sensing system of claim 18, wherein the substrate is comprised of gallium arsenide (GaAs). The power current microstimulation system of claim 18, wherein the substrate has a thickness of substantially 525 microns. The power current micro-sensing system of claim 18, wherein the apertures have a radius of substantially 11.2 microns. 29. The power current microstimulation system of claim 18, wherein the apertures are located on top of the substrate. 30. The power current microstimulation system of claim 29, wherein the apertures are located at a top of the substrate between the lead electrodes. The power current microstimulation system of claim 29, wherein the depth of the apertures at the top of the substrate is substantially about 35 microns. The power current micro-sensing system of claim 18, wherein the holes are located at the bottom of the substrate. 33. The power current microstimulation system of claim 32, wherein the apertures at the bottom of the substrate have a depth of substantially about 100 microns. 34. The power current micro-sensing system of claim 18, wherein the two-dimensional lattice film is composed of cerium oxide. 3. The power current micro-sensing system of claim 18, wherein the two-dimensional lattice film has a thickness of substantially 12,000 angstroms. 3. The power current micro-sensing system of claim 18, wherein the lead electrodes are made of metal. 3. The power current micro-sensing system of claim 36, wherein the lead electrodes are made of aluminum. 3. The power current micro-sensing system of claim 18, wherein the power current micro-sensor is substantially cruciform. 3 9. Power current micro-sensing as described in claim 18 of the patent scope 45 1263050 system 'where the power current micro-sensor is driven by a certain current drive circuit. a method for manufacturing a power current micro-sensor, the method for manufacturing the power current micro-sensor includes at least: forming a mask layer on a top of a substrate; removing a portion of the mask layer to make a portion Forming a top of the substrate; forming a plurality of pores on the substrate; removing the remaining portion of the mask layer; forming a two-dimensional lattice film on the top and bottom of the substrate; removing the portion of the top portion of the substrate a film and a portion of the substrate to form a lead electrode contact hole extending from the two-dimensional lattice film into the substrate; the two-dimensional lattice film on the top of the substrate and the lead The electrode contact hole 'forms a metal layer; and a portion of the metal layer is removed to form a lead electrode. The method of manufacturing a power current microsensor according to the fourth aspect of the invention, wherein the substrate is made of tantalum. 42. The method of manufacturing a power current micro-sensing method according to claim 40, wherein the substrate is composed of InSb. 43. The method of manufacturing a power current micro-sensing 46 1263050 according to claim 40, wherein the substrate is made of gallium arsenide (GaAs). 44. A method of fabricating a power current microsensor according to claim 40, wherein the substrate has a thickness of substantially 525 microns. 45. A method of fabricating a power current microsensor as described in claim 40, wherein the apertures have a radius of substantially 11.2 microns. 46. A method of fabricating a power current micro-sensor as described in claim 40, wherein the apertures are located on top of the substrate. 47. A method of fabricating a power current micro-sensor as described in claim 46, wherein the apertures are located on top of the substrate between the lead electrodes. 48. A method of making a power current microsensor as described in claim 46, wherein the depth of the apertures at the top of the substrate is substantially about 35 microns. 49. A method of fabricating a power current microsensor according to claim 40, wherein the apertures are located at the bottom of the substrate. The method of manufacturing a power current micro-sensor according to claim 49, wherein the depth of the pores at the bottom of the substrate is substantially 100 μm on a substantially 47 1263050. 5. The method of manufacturing a power current microsensor according to claim 40, wherein the two-dimensional lattice film is composed of ruthenium dioxide. 5. The method of manufacturing a power current microsensor according to claim 40, wherein the thickness of the two-dimensional lattice film is substantially about 12,000 angstroms. The method of manufacturing a power current microsensor according to claim 40, wherein the metal layer is made of aluminum. 54. A method of manufacturing a power current microsensor according to claim 40, wherein the power current microsensor is substantially cruciform. 48