1261626 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明） . (一） 發明所屬之技術領域 · 本發明有關一種濺鍍裝置，且更特別地，有關一種能夠 最大地禁止不合需要的粒子附著於一靶材料並且隨後藉由 顯著地強化該不需要之粒子對一遮罩與一使用金屬銲錫層 之附著度的遮光罩之一附著特性形成一均勻塗佈薄膜於一 基體上的濺鍍裝置。 · (二） 先前技術 當高能量粒子（其大部分係藉一電場加速之陽離子）被導 致衝擊時一固體表面，該固體表面上之原子與分子會從該 處射出，同時均與該高能量粒子交換動力。 此現象被稱爲「濺鍍」，而且廣泛地被使用於該半導體 工業，該機器工業或是其他工業。 該濺鍍之使用的一特殊實例包含在製造半導體晶圓或 LCD (液晶顯示器）之程序或塗佈抗反射薄膜之程序時之一特 ® 殊金屬諸如鉻或鈦之塗佈於一基體上。 第1圖係一目的以執行該濺鍍之設備的其中之一的一種 交流（AC )濺鍍系統之示意圖。如該圖所示，一濺鍍裝置2 、 以及一基體3皆首先以一適當間隔距離安裝於一具有一適 當內部空間之室1內。 如該圖所示，該濺鍍裝置2連接至一陰極，而該基體3 連接至一陽極。 -5- 1261626 隨後，當一具有大約丨〇13托（Tori·)之壓力的高真空空 氣形成於該室1內以及由一電源處之一電壓施加至該室時 ’處於一電漿狀態之原子產生於該室內。當該充電原子衝 擊一靶材料之一表面時，就會有被產生的粒子射出，使靶 材料粒子皆由該表面之有關受衝擊部位射出射進該室之氣 體的實例包含惰性氣體諸如氬，活性氣體諸如N2或02。 由該靶材料射出之該粒子朝向該基體3移動並被附著於 該基體3而形成一塗佈薄膜於其上。 第2圖係一習知濺鍍裝置之一放大側邊剖面圖，該濺鍍 裝置2包含一靶材料2 - a，其中直接發生一濺鍍現象；一 附著於該靶材料2 - a之一後部表面用以支撐該靶材料的支 撐板2 - b ; —以一預定間隔距離設置於該靶材料2 - a之邊 緣周圍目的以作爲該接地之遮罩2-c; —設置於該遮罩2-c 之最前部並且圍繞該靶材料2 - a之該邊緣的遮光罩2 - d ; 以及一設置於該支撐板2 - b之最後部並且於其中之一內部 中空部位包含磁鐵2 - e的冷卻水套2 - f。 金屬銲錫是用來作爲一目的以附著該靶材料2 - a於該背 板2 - b之黏著劑。 該金屬銲錫之一實例包含一選自銦、錫、錯、銻與銀， 或其合金的一實例。 那就是，當該靶材料2 - a之組成粒子射出並且於該靶材 料2 _ a附著在該背板2 - b之一狀態時移動至該基體3，該 靶材料2 - a逐漸變薄。因此，在一預定之時間週期之後， 一操作者應該調換一整體的濺鍍靶4。 -6 一 1261626 關於該祀材料2_a，氧化銦錫（Indium Tin 〇xlde，ΙΤ〇) 、組、銘、鈦、金、銀或其他特殊金屬是依據諸如半導體 晶圓或LCD之最終產品的規格選擇性地使用。 同時’雖然藉由操作該系統以及施加該電壓於該靶材料 2 - a所射出的該粒子大部分均附著於該基體3以形成一均 句塗佈薄膜於其上，但是其某些部分皆附著在除了該基體 3以外之邰位，即該室1之一內壁或是該靶材料2 - a上之 其他部位’並且有形成所謂「不合需要之粒子」之傾向。 因爲該不合需要之粒子顯示高阻抗電阻之特性，因此其 白作爲一於該靶材料2-a上之覆蓋物，如第3a至3d所示 ’均爲該祀材料2 - a之放大剖面圖，而且因此僅於未出現 有該不合需要之粒子之靶材料的部位上發生該濺鍍現象（見 第3b圖）。 那就是，一旦該不合需要之粒子p附著在該靶材料2 _ a ( 見第3a圖）時’即於該不合需要之粒子p的周圍上發生藉 由該濺鍍現象之該粒子射出。在另一方面，因爲其他不合 需要之粒子均聚集在該不合需要之粒子p的周圍，因此該 原始不合需要之粒子逐漸形成黑色圓錐體（見第3 c圖）。 因爲於該透過前述程序而形成之黑色圓錐體的尖端處發 生電荷濃度甚高於其他任何一部位處之電荷，因此即可能 在該尖端處容易產生電弧（見第3d圖）。同時，由於該電弧 ’許多被抑制並且由該靶材料被射出之不合需要之粒子p 會附著於該室或基體之其他部位。 因此，具有作爲該靶材料之相同元件的該均勻塗佈薄膜 -7- 1261626 不疋形成於該基體上，而且一不良的塗佈薄膜形成，其中 由^不合需要之粒子處產生之外來物質皆零星地被嵌入。 因此，爲要預防已由該靶材料射出而附著至該遮罩或遮 光罩並且隨後送回至該靶材料之該粒子形成該不合需要之 粒子’不同類型之方法，諸如一形成半凹半凸面的部位於 或施加熱噴霧程序於第2圖中顯示之該遮罩2-c與遮光罩 2 - d之方法已經被嘗試。 接下來，將討論一利用該遮罩與遮光罩之結構。藉由形 成該半凹半凸面之部位於該遮罩與遮光罩之該表面上，或 是施加氣流或熱噴霧程序至該遮罩與遮光罩之該表面以形 成許多的細微凹處於其上，該外來物質，諸如於該濺鍍程 序期間所產生之該不合需要的粒子，即導致容易地附著於 該遮罩以及遮光罩。 然而，在這些方法中，因爲該外來物質諸如該不合需要 的粒子僅進入並佔用該細微凹處，其黏著性變低。因此， 該附著力於一長期濺鑛程序期間顯著地降低。而且，可能 有一嚴重的問題，因爲該先前附著的不合需要之粒子剝落 。因此，還未使這些方法獲得一令人滿意的結果。 (三）發明內容 因此，本發明被仔細考慮以解決上述之習知技術的問題 。本發明之一目的係要提供一種能夠最大地禁止不合需要 的粒子附著於一祀材料並且隨後藉由顯者地強化該不需要 之粒子對一'遮罩與一使用金屬驛錫層之附者度的遮光罩之 一附著特性形成一均勻塗佈薄膜於一基體上的濺鍍裝置。 一 8 - 1261626 依據目的以貫現該目的之本發明的一種濺鍍裝置，金屬 焊錫層形成於該靶材料之該遮罩與遮光罩兩者之表面上。 較佳地，半凹半凸之部位形成於該金屬銲錫層上以致該 不合需要之粒子的該附著力可以更進一步地強化。 那就是，在本發明之該濺鍍裝置中，當該耙材料所射出 之粒子之某些被送回時，該不合需要之粒子皆因爲被塗佈 於該遮罩與遮光罩上之該金屬銲錫的該附著力而被附著於 該金屬銲錫層上。因此，就無法再移動至該靶材料。 (五）圖示之簡單說明 本發明之上述與其他目的以及特性將由於下列之一結合 該附圖之較佳實施例的說明而趨於明瞭，其中： 第1圖係一目的以執行濺鍍的設備之其中之一的交流（AC ) 濺鍍系統之示意圖； 第2圖係一習知的濺鍍裝置之放大側邊剖面圖； 第3 a至3 d圖係一靶材料之放大剖面圖；以及 第4圖係一依據本發明之一實施例的濺鍍裝置之側邊剖 面圖。 (四）實施方式 在下文中，一種根據本發明一實施例的灑鍍裝置將參照 附圖詳細說明。 第4圖係依據本發明之一實施例的一種濺鍍裝置之一側 邊剖面圖，該濺鍍裝置4包含一靶材料4 - a，其中一濺鍍 現象直接發生；一用以支撐該靶材料而附著於該靶材料4 -a之一後部表面的背板4 - b ; —以預定之間隔距離設置於該 -9 一 1261626 靶材料4 - a之邊緣周圍的遮罩4 - c ; 一定位於該遮罩之最 前部的遮光罩4 - d ;以及一設置於該背板4 - b之最後部並 且包含磁鐵4 - e於其中之一內部中空部位的冷卻水套4 - f 。就這一點而言，依據本發明之該濺鍍裝置與第2圖所示 的習知濺鍍裝置一樣具有相同構造。 然而，如前述，金屬銲錫層4 - g形成於構成依據本發明 之該實施例的該濺鍍裝置4之該遮罩4-c與遮光罩4-d兩 者的表面上。 較佳地，該金屬銲錫層4 - g形成於一選擇自銦、錫、鉛 、鍊與銀，或其合金之外。 這些材料大體上等於或相似於用來作爲一於該靶材料4 _ a與該背板4 - b之間的接著劑之金屬銲錫。 將說明形成該金屬銲錫層4 - g之特殊程序。有一藉由前 述材料挑選之任何一材料，充分熔化具有實質流度之該挑 選的材料以及利用一噴霧器（未標示）噴塗該熔化材料於該 遮罩4-c與遮光罩4-d之該表面上獲得該金屬銲錫層4_g 之方法；以及一藉由浸入該遮罩4-c與遮光罩4-d於熔化 的金屬銲錫中以獲得該金屬銲錫層4 - g之方法。 那就是，可了解到這些方法爲相似於習知熱噴霧程序。 因此，在依據本發明之該實施例的該濺鍍裝置中，藉由 形成具有附著力與額外半凹半凸之部位的該金屬銲錫層於 該靶材料之最前部的該遮罩與遮光罩兩者之該表面上，即 使執行一長時間濺鍍程序，不合需要之粒子附著於該表面 亦不會如此大幅降低。而且，先前附著之不合需要的粒子 - 1 0 - 1261626 剝落之現象不會發生。 本發明者已經證實一藉由直接使用依據本發明之該濺鍍 裝置於一工作場所所獲得的結果。濺鍍作業已經以一靶材 料執行約1 5天。結果’雖然由於不合需要之粒子附著力的 不良作業由5天之後快速增加於習知的濺鍍裝置中，但是 直到約1 0天過去之後，有關不良作業才會開始顯現於依據 本發明之該濺鍍裝置中。 就該濺鍍程序期間關於該不合需要之粒子的不良作業最 不利於習知濺鍍裝置而論，不良作業之顯著降低具有超出 一單一尺寸結果之範圍的重要性。 同時，雖然該金屬銲錫層形成而且該半凹半凸之部位皆 額外地形成於該金屬銲錫層的該實例已經藉由實例被描述 ，但是依據該金屬銲錫層之該厚度與黏著度，鑒於該程序 數目之縮減，形成該半凹半凸之部位的該步驟可以省略。 除該前述之金屬材料之外的其他金屬銲錫亦可採用。 如前述，依據本發明，可利用形成於該遮罩與遮光罩之 該表面上的該金屬銲錫層之黏著度獲得一種能夠最大禁止 該不合需要的粒子附著於該靶材料並且再形成一均勻的塗 佈薄膜於該基體上之濺鍍裝置。 就該濺鍍程序在該高級技術電子工業上是非常重要而且 該不合需要之粒子總是於該濺鍍程序中引發問題而言，依 據本發明之該濺鍍裝置是非常有用於該相關工業。 藉由該技術將了解到依據前述之說明可做各種不同的修 改，而且任何包含有一靶材料、一背板、一遮罩與〜遮光 -11- 1261626 罩且建構以具有形成於該遮罩與遮光罩兩者之表面上的金 屬銲錫層之濺鍍裝置皆涵蓋於本發明之說明範圍內。 元件符號對照表 1 室 2 濺鍍裝置 2 - a 靶材料 2 - b 支撐板1261626 发明, the description of the invention (the description of the invention should be described: the technical field, the prior art, the content, the embodiment and the schematic description of the invention). (1) Technical field to which the invention pertains. More particularly, it relates to a method capable of maximally inhibiting the attachment of undesirable particles to a target material and subsequently attaching one of the masks to a metal solder layer by significantly reinforcing the unwanted particles. The feature forms a sputtering device that uniformly coats the film on a substrate. · (ii) Prior art When high-energy particles (mostly cations accelerated by an electric field) are caused to impact, a solid surface from which atoms and molecules on the solid surface will be ejected, simultaneously with the high energy Particle exchange power. This phenomenon is known as "sputtering" and is widely used in the semiconductor industry, the machine industry or other industries. A specific example of the use of the sputtering includes the application of a special metal such as chromium or titanium to a substrate in the process of manufacturing a semiconductor wafer or an LCD (liquid crystal display) or a process of coating an antireflection film. Figure 1 is a schematic illustration of an alternating current (AC) sputtering system for one of the devices for performing the sputtering. As shown in the figure, a sputtering apparatus 2 and a substrate 3 are first mounted in a chamber 1 having an appropriate internal space at an appropriate spacing. As shown in the figure, the sputtering apparatus 2 is connected to a cathode, and the substrate 3 is connected to an anode. -5- 1261626 Subsequently, when a high vacuum air having a pressure of about 13 Torr (Tori·) is formed in the chamber 1 and a voltage is applied to the chamber from a power source, it is in a plasma state. Atoms are produced in the chamber. When the charging atom impinges on the surface of one of the target materials, the generated particles are emitted, and an example of the gas which is emitted from the affected portion of the surface by the relevant impacted portion into the chamber contains an inert gas such as argon. The reactive gas is such as N2 or 02. The particles ejected from the target material are moved toward the substrate 3 and attached to the substrate 3 to form a coating film thereon. Figure 2 is an enlarged side cross-sectional view of a conventional sputtering apparatus. The sputtering apparatus 2 includes a target material 2 - a in which a sputtering phenomenon occurs directly; and one attached to the target material 2 - a a rear surface for supporting the target material of the target material 2 - b; - a predetermined distance apart from the edge of the target material 2 - a for the purpose of the grounded mask 2-c; a hood 2 - d at the forefront of 2-c and surrounding the edge of the target material 2 - a ; and a rear portion disposed at the rear of the support plate 2 - b and containing a magnet 2 - e in a hollow portion thereof Cooling water jacket 2 - f. Metal solder is used as a purpose to adhere the target material 2 - a to the backing plate 2 - b of the adhesive. An example of the metal solder includes an example selected from the group consisting of indium, tin, erbium, antimony and silver, or alloys thereof. That is, when the constituent particles of the target material 2 - a are emitted and moved to the substrate 3 when the target material 2 - a is attached to one of the back sheets 2 - b, the target material 2 - a is gradually thinned. Therefore, an operator should swap an integral sputtering target 4 after a predetermined period of time. -6 一1261626 About this bismuth material 2_a, indium tin oxide (Indium Tin 〇xlde, ΙΤ〇), group, Ming, titanium, gold, silver or other special metals are selected according to the specifications of the final product such as semiconductor wafer or LCD Use sexually. At the same time, 'although most of the particles emitted by the target material 2 - a are attached to the substrate 3 by operating the system and applying the voltage to form a uniform coated film thereon, some parts thereof are It adheres to a niche other than the substrate 3, that is, an inner wall of the chamber 1 or other portion of the target material 2 - a and has a tendency to form "unwanted particles". Since the undesirable particles exhibit the characteristics of high-impedance resistance, the white is used as a cover on the target material 2-a, as shown in FIGS. 3a to 3d, which are enlarged cross-sectional views of the tantalum material 2 - a. And, therefore, the sputtering occurs only at the portion where the target material of the undesirable particles does not appear (see Figure 3b). That is, when the undesirable particles p adhere to the target material 2_a (see Fig. 3a), the particles which are caused by the sputtering phenomenon are emitted around the undesired particles p. On the other hand, since other undesirable particles are concentrated around the undesirable particles p, the originally undesirable particles gradually form a black cone (see Fig. 3c). Since the charge concentration at the tip of the black cone formed by the foregoing procedure is much higher than that at any other portion, it is possible to generate an arc at the tip (see Fig. 3d). At the same time, since the arc 'a lot is suppressed and the undesirable particles p emitted by the target material are attached to the chamber or other portions of the substrate. Therefore, the uniform coating film -7-1261626 having the same member as the target material is not formed on the substrate, and a poor coating film is formed in which foreign matter is generated by the undesired particles. Sporadically embedded. Thus, in order to prevent the particles that have been attached to the mask or hood from being ejected by the target material and subsequently returned to the target material to form the undesirable particles, a different type of method, such as forming a semi-concave semi-convex surface The method of placing or applying the thermal spray program to the mask 2-c and the hood 2 - d shown in Fig. 2 has been attempted. Next, a structure using the mask and the hood will be discussed. Forming the semi-concave semi-convex surface on the surface of the mask and the hood, or applying an air flow or a thermal spray procedure to the surface of the mask and the hood to form a plurality of fine recesses thereon, The foreign matter, such as the undesirable particles generated during the sputtering process, results in easy attachment to the mask and the hood. However, in these methods, since the foreign matter such as the undesirable particles enters and occupies only the fine recess, the adhesiveness thereof becomes low. Therefore, the adhesion is significantly reduced during a long-term splashing procedure. Moreover, there may be a serious problem because the previously attached undesirable particles are peeling off. Therefore, these methods have not yet achieved a satisfactory result. (III) SUMMARY OF THE INVENTION Accordingly, the present invention has been carefully considered to solve the problems of the above-described prior art. It is an object of the present invention to provide an attachment that is capable of maximally inhibiting the attachment of undesirable particles to a layer of material and then by significantly enhancing the unwanted particles to a 'mask' and a metal tin layer. One of the hood's adhesion characteristics forms a sputtering device that uniformly coats the film on a substrate. A 8 - 1261626 A sputtering apparatus according to the present invention for achieving the object, a metal solder layer is formed on a surface of both the mask and the hood of the target material. Preferably, a semi-concave semi-convex portion is formed on the metal solder layer such that the adhesion of the undesirable particles can be further enhanced. That is, in the sputtering apparatus of the present invention, when some of the particles emitted from the crucible material are returned, the undesirable particles are due to the metal applied to the mask and the hood. The adhesion of the solder is adhered to the metal solder layer. Therefore, it is no longer possible to move to the target material. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects and features of the present invention will become apparent from the following description taken in conjunction with the appended claims claims Schematic diagram of an alternating current (AC) sputtering system of one of the devices; Fig. 2 is an enlarged side cross-sectional view of a conventional sputtering apparatus; and an enlarged sectional view of a target material of the third to third drawings And Figure 4 is a side cross-sectional view of a sputtering apparatus in accordance with an embodiment of the present invention. (4) Embodiments Hereinafter, a sputtering apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. 4 is a side cross-sectional view of a sputtering apparatus according to an embodiment of the present invention, the sputtering apparatus 4 includes a target material 4-a, wherein a sputtering phenomenon occurs directly; a backing plate 4 - b attached to the rear surface of one of the target materials 4 - a; a mask 4 - c disposed at a predetermined distance from the edge of the -9 - 1266126 target material 4 - a ; a hood 4 - d located at the foremost part of the mask; and a cooling water jacket 4 - f disposed at the rear of the back panel 4 - b and containing a magnet 4 - e in one of the inner hollow portions. In this regard, the sputtering apparatus according to the present invention has the same configuration as the conventional sputtering apparatus shown in Fig. 2. However, as described above, the metal solder layer 4-g is formed on the surface of both the mask 4-c and the hood 4-d constituting the sputtering apparatus 4 according to this embodiment of the present invention. Preferably, the metal solder layer 4-g is formed from a choice of indium, tin, lead, chain and silver, or alloys thereof. These materials are substantially equal or similar to the metal solder used as an adhesive between the target material 4_a and the backsheet 4-b. A special procedure for forming the metal solder layer 4-g will be explained. Having a material selected by the foregoing materials, the selected material having a substantial fluidity is sufficiently melted and the molten material is sprayed on the surface of the mask 4-c and the hood 4-d by a sprayer (not labeled) A method of obtaining the metal solder layer 4_g; and a method of obtaining the metal solder layer 4-g by dipping the mask 4-c and the hood 4-d in the molten metal solder. That is, it can be seen that these methods are similar to the conventional thermal spray procedure. Therefore, in the sputtering apparatus according to the embodiment of the present invention, the mask and the hood are formed at the foremost portion of the target material by forming the metal solder layer having adhesion and additional semi-concave convex portions. On the surface of the two, even if a long-term sputtering process is performed, the undesirable particles attached to the surface are not so greatly reduced. Moreover, the phenomenon of exfoliation of the previously undesirable particles - 1 0 - 1261626 does not occur. The inventors have confirmed the results obtained by directly using the sputtering apparatus according to the present invention at a workplace. The sputtering operation has been performed with a target material for approximately 15 days. The result 'although the poor operation due to undesirable particle adhesion is rapidly increased from the conventional sputtering apparatus after 5 days, but after about 10 days have elapsed, the related bad operation will begin to appear in accordance with the present invention. In the sputtering device. As far as the poor handling of the undesirable particles during the sputtering process is most detrimental to conventional sputtering devices, the significant reduction in poor handling has the importance of exceeding the range of a single size result. Meanwhile, although the metal solder layer is formed and the semi-concave convex portion is additionally formed on the metal solder layer, this example has been described by way of example, but according to the thickness and adhesion of the metal solder layer, The number of programs is reduced, and the step of forming the semi-concave semi-convex portion can be omitted. Metal solders other than the aforementioned metal materials may also be used. As described above, according to the present invention, the adhesion of the metal solder layer formed on the surface of the mask and the hood can be utilized to obtain a maximum ban of the undesirable particles from adhering to the target material and forming a uniform A sputtering device for coating a film on the substrate. The sputtering apparatus according to the present invention is very useful in the related industry insofar as the sputtering process is very important in the advanced technology electronics industry and the undesirable particles always cause problems in the sputtering process. It will be appreciated by the art that various modifications can be made in accordance with the foregoing description, and that any of the target material, a backing plate, a mask and a shading-11-1262626 cover are constructed and constructed to have a mask formed thereon. Sputtering devices for metal solder layers on both surfaces of the hood are encompassed within the scope of the present invention. Component Symbol Comparison Table 1 Room 2 Sputtering Unit 2 - a Target Material 2 - b Support Plate
2 - c 遮罩 2-d 遮光罩 2-e 磁鐵 2- f 冷卻水套 3 基體 4 濺鍍靶 4 - a 靶材料 4 - b 背板2 - c mask 2-d hood 2-e magnet 2- f cooling jacket 3 base 4 sputtering target 4 - a target material 4 - b back plate
4 - c 遮罩 4 - d 遮光罩 4-e 磁鐵 4 - f 冷卻水套 4 - g 金屬銲錫層 P 粒子 -12-4 - c mask 4 - d hood 4-e magnet 4 - f cooling jacket 4 - g metal solder layer P particles -12-