1257657 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種例如ic卡、智慧卡或通訊卡等 晶片卡之晶片模組，特別係有關於一種覆晶於金屬薄膜之 晶片模組。 【先前技術】 現今對電子產品之要求不外乎輕、薄、短、小，故為 迎合消費大眾之需求’封裝製程中使用打線技術以達電性 連接之步驟置換為凸塊回銲之製程，同時增加了傳遞之速 度，然而為了使凸塊能回銲於基板上而不使凸塊坍塌，基 板之材質需加以限制。 請參閱第1圖，習知之晶片模組i 〇〇係包含一雙層軟 性電路板110及一覆晶晶片120。該雙層軟性電路板U0 係包含一 Pl(polyimide)基板m，該雙層軟性電路板u〇 之一上表面113係設置有複數個凸塊接墊117以及一銲罩 層115，該雙層軟板no之一下表面114係設置有複數個 接觸墊112，經由一導通孔116電性導通該些接觸墊n2 與該些凸塊接墊117,該覆晶晶片120係具有一主動面ι21 及一背面122，並包含有複數個凸塊in。該些凸塊123 係經回銲而接合至該雙層軟性電路板丨丨〇之該些凸塊接墊 117上，使該覆晶晶片12〇設置於該雙層軟板110之該上 表面113 ’以構成一晶片模組100。該晶片模組1〇〇係可 固定設置於一晶片卡本體1 〇内，該晶片卡本體1 〇係包含 有一容置槽11，該容置槽内係形成有一容晶穴12,該覆 6 1257657 晶晶片i2〇係位於該容晶穴12内，該雙層軟板ιι〇則位 於該容置槽u内以形成該習知之晶片卡。但是該雙層軟 板110之成本昂貴，且不具通用性。 — -------------------------------------------------------------------------------- .. _____ __ .....--..... ^ ·__ 雲· f發明内容】 本發明之主要目的係在於提供一種覆晶於金屬薄膜 之晶片模組以及其使用之今属、墙时j π 丹便用H屬/專膜承載器，一覆晶晶片係 設置於該金屬薄膜承載器上之-^ =導電膠上’該金屬薄膜承載器係具有複數個金屬塾片並 疋義有-對應於該覆晶晶片之—覆晶接合區，該些金屬塾 片之一部位係位於該金屬薄膜承栽器之該覆晶接合區 内，其中至少一金屬墊片之該部位係為一覆晶接指，配合 該異方性導電材或熱固性非導電膠可使得該覆晶晶片之 複數個凸塊係、可電性連接至該些金屬墊片在該覆晶接合 品内之任—[5位。相較於傳統覆晶接合之晶片模組採用的 雙層軟板更具有通用性並且能節省承㈣之成本。 曰本發明之次一目的係在於提供一種覆晶於金屬薄膜 ，曰曰二模組’該金屬薄膜承載器之—下表面係貼附有一支 撐膠帶’避免該金屬薄膜承載器之金屬墊片在 程產生變形或位移。 了褒過 人一依據本發明，—種覆晶於金屬薄膜之晶片模組主要包 :及金屬薄膜承載器、一異方性導電材或熱固性非導電膠 以及—覆晶晶片。該金屬薄膜承載器係具有複數個 片並定義有一霜曰杜人 ^ *有覆曰曰接合區，該些金屬墊片之一部位係位於 “屬薄膜承載器之該覆晶接合區内，其中至少-金屬墊 1257657 ^之該部位料-覆晶接指，該異方性㈣材或熱固性非 導電膠係形成料覆晶接合區上，該覆晶晶片係設置於該 、方!生導電材上，且該覆晶晶片係具有複數個凸塊，其係 藉由該異方性導電材或熱固性非導電膠電性連接至該些 金屬墊片。 一 【實施方式】 請參閱第2圖，在本發明之第一具體實施例中，一種 覆晶於金屬薄膜之晶片模組2()()主要包含—金屬薄膜承載 器2H)、-異方性導電#22〇以及—覆晶晶片23〇。該全 屬薄膜承載器2H)係具有一上表面211及—下表面212。 如第3圖所示’該金屬薄膜承載器21〇係具有複數個金屬 塾片213並且於該上表面211係定義有-覆晶接合區 2。14’該些金屬墊片213之_部位係位於該金屬薄膜承載 器210之該覆晶接合區214 β，其中至少一金屬塾片213 之該部位係為-覆晶制215。本實施例中，該覆晶接合 區214之該覆晶接指215係為手指形狀，以利接合該覆晶 晶片230’通常兩相鄰之該些金屬墊片213之間隙係形成 為一狹長溝槽216，該狹長溝槽216係具有等距之寬度， 以擴大該些金屬墊片213之對外接觸面積。此外，該金屬 薄膜承載器2 1 0係具有複數個位於兩側之鏈齒孔2 1 7，使 該金屬4膜承載器21 〇於組裝過程中便於輸送。較佳地， 覆晶於金屬薄膜之晶片模組2〇〇另包含有一支撐膠帶 24〇,其係貼附於該金屬薄膜承載器210之該下表面2丨2, 可用以支揮該覆晶於金屬薄膜之晶片模組，避免該晶片模 1257657 組受重力而產生變形。 該異方性導電材220係形成於該覆晶接合區214上， 通常該異方性導電材220係可為異方性導電膠（ACp， Antisotropic Conductive Paste)或異方性導電膠帶（acf Antisotropic Conductive Film)，其係由點塗、印刷、塗抹 或貼覆方式所形成。 該覆晶晶片230係設置於該異方性導電材22〇上，該 覆晶晶片230係具有一主動面231、一背面232及複數個 銲墊233，其中該些銲墊233上係具有複數個凸塊234， 該些凸塊234可為金凸塊。通常該些凸塊234係具有一平 坦頂面’並且該些凸塊234之金屬熔點應高於該異方性導 電材220之固化溫度。該些凸塊234係能對準於該些覆晶 接指215之其中一部位，本實施例中，該些覆晶接指215 係具有一對應於該些凸塊234之預定接合位置，當執行一 熱壓合步驟時’該覆晶晶片230係對準於該金屬薄膜承載 器210之該覆晶接合區214，該些凸塊234係嵌入於該異 方性導電材220，並藉由具有相同粒徑導電粒子之該異方 性導電材220，電性連接至該些金屬墊片213。因此，該 金屬薄膜承載器21 0比傳統雙層軟性電路板能節省承載器 之成本。 此外，如第4圖所示之晶片卡，將該晶片模組2〇〇設 置於具有一容置槽21之一晶片卡本體20上，該容置槽21 係形成有一容晶穴22，該覆晶晶片230係嵌入該容晶穴 22内，並以一黏著劑將該晶片模組2〇〇固設於該晶片卡本 1257657 . 體20 ’以製作成一晶片卡，可作為手機内之§ιμ卡或電 • 子錢包内之智慧晶片卡。 请參閱第5圖，在本發明之第二具體實施例中，一種 覆晶於金屬薄膜之晶片模組3〇〇主要包含一金屬薄膜承載 器 310、一熱固性非導電膠 33〇(n〇n e〇nductivepaste)、一 覆日日日日片340。請參閱第6圖，該金屬薄膜承載器3丨〇係 具有複數個金屬塾片312，兩相鄰之該些金屬墊片312之 •間間隙係形成為一等距寬度之狹長溝槽 3 14，該金屬薄膜 承載器310之上表面並定義有一覆晶接合區，該金屬薄膜 承載裔310係另具有複數個位於兩側之鏈齒孔315使該金 屬薄膜承載器310可由輸送帶傳輸。 在本實施例中，如第7圖所示，該金屬薄膜承載器3 J 〇 係具有6片金屬墊片312，其可通用於[Μ」〜3·5χ3·5_ 規格之曰曰片，該覆晶接合區可依照不同晶片之尺寸區分為 第一覆晶接合區321、第二覆晶接合區322、第三覆晶接 | 合區323、第四覆晶接合區324及第五覆晶接合區。 A1金屬塾片3 12之一部位係位於該金屬薄膜承載器3】〇 ★之該些覆晶接合區321、322、323、324以及325，其中至 •夕金屬墊片3 12之該部位係為一覆晶接指3 13，該覆晶 接指313係為收斂錐形，依其所對應之覆晶接合區而具有 第一凸塊接合點321a、第二凸塊接合點322a、第三凸塊 接合點323a、第四凸塊接合點32乜及第五凸塊接合點 325a。该熱固性非導電膠33〇係形成於該些覆晶接合區 321、322、323、324以及325之其中之一之上，其係由點 10 1257657 塗、印刷、塗抹或貼覆方式所形成。不同尺寸之覆晶晶片 340均可設置於該熱固性非導電膠330上，該覆晶晶片340 之一主動面341上具有複數個銲墊342，該些銲墊342上 係具有複數個凸塊343，該些凸塊343係相對應於該些覆 晶接指313，藉由一熱壓合步驟使該些凸塊343壓觸於該 些覆晶接指3 1 3 ’以達到電性連接。此外，該晶片模組3〇〇 在未設置於一晶片卡前，以一支撐膠帶35〇貼附於該金屬 薄膜承載器310之一下表面311，用以支撐該晶片模組 300 〇 ( 請參閱第8及9圖，依據本發明之第三實施例，一金 屬薄膜載器410可設計為具有8片金屬墊片411之格式， 該金屬薄膜承載器410具通用性，可承載15x1.5〜4 〇x4.〇 丽規格之晶片，該金屬薄膜承載器41〇係定義有一可變式 覆晶接合區，較佳地，該覆晶接合區依照不同尺寸規格之 晶片區分為第一覆晶接合區421、第二覆晶接合區422、 第二覆晶接合區423、第四覆晶接合區424、第五覆晶接 合區425及第六覆晶接合區426。該些金屬墊片4ιι之一 部位係位於該金屬薄膜承載器41〇之該些覆晶接合區 421、422、423、424、425及426内，其中至少一金屬塾 片411之該部位係為一覆晶接指，該些覆晶接指々Η 係為收傲錐形。如第8及9圖所示，該些覆晶接指412在 不同之覆晶接合區421、422、423、424、425、426内可 設定有第-凸塊接合點42la、第二凸塊接合點422&、第 三凸塊接合點423a、第四凸塊接合點42牝、第五凸塊接 1257657 合點425a、第六凸塊接合點426a，以供電性連接不同尺 寸晶片之凸塊。因此，六種不同尺寸之晶片皆可選用該金 屬薄膜承載器4 1 0加以製成一晶片卡之一晶片模組，故該 金屬薄膜承載器410具有晶片通用性之功效，增加製程上 之便利性。此外，相鄰該些金屬墊片411之間間隙具有等 距寬度之狹長溝槽413，該金屬薄膜承載器410之兩側係 具有複數個鏈齒孔414具有方便輸送之功效。該金屬薄膜 承載器410之一下表面係貼覆一支撐膠帶43〇，以防止該 金屬薄膜承載器410之金屬墊片411及其覆晶接指412在 一晶片模組組裝於該金屬薄膜承載器41〇之過程產生變形 或位移。 本發明之保遵範圍當視後附之申請專利範圍所界定 者為準，任何熟知此項技藝者，在不脫離本發明之精神和 範圍内所作之任何變化與修改，均屬於本發明之保護範 圍。 【圖式簡單說明】 第1圖：習知在-晶片卡内之晶片模組之截面示意圖。 第2圖*據本發明之第一具體實施例’一種覆晶於金屬 薄膜之晶片模組之截面示意圖。 第3圖：依據本發明之第一具體實施例，該晶片模組所使 用之一金屬薄膜承載器之上視圖。 第4圖：依據本發明之第一且#督 乐具體實施例，該晶片模組設置 於日日片卡内之截面示意圖。 第5圖：依據本發明之第一 十况κ罘一具體實施例，另一種覆晶於金 12 1257657 屬薄膜之晶片模組之截面示意圖。 第6圖·依據本發明之第二具體實施例，該晶片模組所使 用之金屬薄膜承載器（6 pin)之上視圖。 第7圖：依據本發明之第二具體實施例，該金屬薄膜承載 器顯示在其覆晶接合區内可設置不同尺寸晶片 之上視圖。 第8圖：依據本發明之第三具體實施例，另一種晶片模組 所使用之金屬薄膜承載器（8 pin)之上視圖。 第9圖.依據本發明之第三具體實施例，該金屬薄膜承載 器顯示在其覆晶接合區内可設置不同尺寸晶片 之上視圖。 【主要元件符號說明】 10 晶片卡本體 11 容置穴 12 容晶穴 20 晶片卡本體 21 容置穴 22 容晶穴 100 晶片模組 110 雙層軟板 111 pi基板 112 接觸墊 113 上表面 114 下表面 115 銲罩層 116 導通孔 117 凸塊接墊 120 覆晶晶片 121 主動面 122 背面 123 凸塊 200 晶片模組 210 金屬薄膜承載器 211 上表面 212 下表面 213 金屬墊片 214 覆晶接合區 215 覆晶接指 216 狹長溝槽 217 鏈齒孔 13 12576571257657 IX. Description of the Invention: [Technical Field] The present invention relates to a wafer module for a wafer card such as an ic card, a smart card or a communication card, and more particularly to a wafer module for flip chip on a metal film . [Prior Art] Today's requirements for electronic products are nothing less than light, thin, short, and small, so to meet the needs of the consumer. 'The process of using wire bonding technology to replace the electrical connection in the packaging process is replaced by the process of bump reflow. At the same time, the speed of transfer is increased. However, in order to enable the bump to be soldered back to the substrate without causing the bump to collapse, the material of the substrate needs to be limited. Referring to FIG. 1, the conventional chip module i includes a double-layer flexible circuit board 110 and a flip chip 120. The double-layer flexible circuit board U0 includes a P1 (polyimide) substrate m. The upper surface 113 of the double-layer flexible circuit board u is provided with a plurality of bump pads 117 and a solder mask layer 115. The lower surface 114 of the flexible board is provided with a plurality of contact pads 112 electrically electrically connected to the contact pads n2 and the bump pads 117 via a via hole 116. The flip chip 120 has an active surface ι 21 and A back surface 122 and includes a plurality of bumps in. The bumps 123 are soldered to the bump pads 117 of the double-layer flexible circuit board, so that the flip chip 12 is disposed on the upper surface of the double-layer flexible board 110. 113' to form a wafer module 100. The chip module 1 can be fixedly disposed in a wafer card body 1 . The chip card body 1 includes a receiving groove 11 , and a receiving hole 12 is formed in the receiving groove. 1257657 The crystal wafer i2 is located in the cavity 12, and the double-layer flexible board is located in the receiving groove u to form the conventional wafer card. However, the double-layer flexible board 110 is expensive and non-universal. — ------------------------------------------------- ------------------------------- .. _____ __ .....--..... ^ ·__ The main purpose of the present invention is to provide a wafer module which is coated on a metal thin film and a genus, a genus, a genus, a lithographic wafer, and a flip chip. Provided on the metal film carrier - ^ = conductive paste - the metal film carrier has a plurality of metal dies and has a corresponding - corresponding to the flip chip - the flip chip junction, the metal One part of the cymbal is located in the flip-chip bonding area of the metal film carrier, wherein at least one part of the metal pad is a flip chip finger, and the anisotropic conductive material or thermosetting non-conductive glue is matched The plurality of bumps of the flip chip can be electrically connected to any of the metal pads in the flip chip bond. Compared with the conventional flip chip bonded wafer module, the double-layer flexible board is more versatile and can save the cost of the (4). The second object of the present invention is to provide a flip chip on a metal film, and the second surface of the metal film carrier has a support tape attached to the lower surface to prevent the metal film carrier from being placed on the metal film carrier. The process produces deformation or displacement. According to the present invention, a wafer module coated with a metal film is mainly composed of a metal film carrier, an anisotropic conductive material or a thermosetting non-conductive paste, and a flip chip. The metal film carrier has a plurality of sheets and defines a frosted ruthenium having a covered joint region, and one of the metal gaskets is located in the flip chip joint region of the film carrier, wherein At least - the metal pad 1257657 ^ of the portion of the material - flip chip fingers, the anisotropic (tetra) material or thermosetting non-conductive glue based on the flip chip junction region, the flip chip is set in the square, raw conductive material The flip chip has a plurality of bumps electrically connected to the metal pads by the anisotropic conductive material or the thermosetting non-conductive paste. [Embodiment] Please refer to FIG. In the first embodiment of the present invention, a wafer module 2()() which is overcoated with a metal thin film mainly comprises a metal thin film carrier 2H), an anisotropic conductive #22〇, and a flip chip 23 The film carrier 2H) has an upper surface 211 and a lower surface 212. As shown in Fig. 3, the metal film carrier 21 has a plurality of metal slabs 213 and is on the upper surface 211. The definition of the - flip chip junction area 2. 14 'the part of the metal pad 213 The flip-chip bonding region 214 β of the metal thin film carrier 210 is at least one of the metal dies 213. The portion of the metal germanium 213 is a flip-chip 215. In the embodiment, the flip chip of the flip-chip bonding region 214 The fingers 215 are in the shape of a finger to facilitate bonding of the flip chip 230'. The gap between the two adjacent metal pads 213 is generally formed as an elongated trench 216 having an equidistant width. In order to enlarge the external contact area of the metal pads 213. In addition, the metal film carrier 2 10 has a plurality of sprocket holes 2 17 on both sides, so that the metal 4 film carrier 21 is assembled. Preferably, the wafer module 2 coated on the metal film further comprises a supporting tape 24 贴 attached to the lower surface 2 丨 2 of the metal film carrier 210, which can be used for The wafer module coated on the metal thin film is supported to prevent the wafer mold 1257657 from being deformed by gravity. The anisotropic conductive material 220 is formed on the flip-chip bonding region 214, usually the anisotropic conductive material. 220 series can be anisotropic conductive adhesive (ACp, Antisotropic Con a ductive paste or a acf antisotropic conductive film, which is formed by spot coating, printing, painting or pasting. The flip chip 230 is disposed on the anisotropic conductive material 22〇. The flip chip 230 has an active surface 231, a back surface 232, and a plurality of pads 233. The pads 233 have a plurality of bumps 234, and the bumps 234 may be gold bumps. The bumps 234 have a flat top surface 'and the metal melting points of the bumps 234 should be higher than the curing temperature of the anisotropic conductive material 220. The bumps 234 are aligned with one of the portions of the flip chip fingers 215. In this embodiment, the flip chip fingers 215 have a predetermined bonding position corresponding to the bumps 234. When the thermal pressing step is performed, the flip chip 230 is aligned with the flip chip bonding region 214 of the metal thin film carrier 210, and the bumps 234 are embedded in the anisotropic conductive material 220. The anisotropic conductive material 220 having conductive particles of the same particle diameter is electrically connected to the metal pads 213. Therefore, the metal thin film carrier 20 0 can save the cost of the carrier over the conventional double-layer flexible circuit board. In addition, as shown in FIG. 4, the wafer module 2 is disposed on a chip card body 20 having a receiving groove 21, and the receiving groove 21 is formed with a cavity 31. The flip chip 230 is embedded in the cavity 22, and the chip module 2 is fixed to the wafer card 1257657 by an adhesive. The body 20' is fabricated into a wafer card, which can be used as a CCD in the mobile phone. Smart chip card in the ιμ card or electric sub-wallet. Referring to FIG. 5, in a second embodiment of the present invention, a wafer-on-chip wafer module 3 is mainly composed of a metal thin film carrier 310 and a thermosetting non-conductive adhesive 33 (n〇ne). 〇nductivepaste), a day and day 340. Referring to FIG. 6, the metal film carrier 3 has a plurality of metal dies 312, and the gap between the adjacent metal shims 312 is formed as an elongated groove 3 14 of equal width. The upper surface of the metal film carrier 310 defines a flip-chip bonding region. The metal film carrier has a plurality of sprocket holes 315 on both sides to enable the metal film carrier 310 to be transported by the conveyor belt. In the present embodiment, as shown in FIG. 7, the metal thin film carrier 3 J has six metal spacers 312 which can be commonly used for the cymbal of [Μ"~3·5χ3·5_ specification. The flip chip bonding region can be divided into a first flip chip bonding region 321, a second flip chip bonding region 322, a third flip chip bonding region 323, a fourth flip chip bonding region 324, and a fifth flip chip according to different wafer sizes. Junction area. One part of the A1 metal ruthenium 3 12 is located in the flip-chip bonding regions 321 , 322 , 323 , 324 and 325 of the metal thin film carrier 3 , wherein the portion of the metal shims 3 12 is The flip chip finger 313 is a convergent taper having a first bump bond point 321a, a second bump bond point 322a, and a third portion according to the corresponding flip chip bond region. The bump bonding point 323a, the fourth bump bonding point 32A, and the fifth bump bonding point 325a. The thermosetting non-conductive adhesive 33 is formed on one of the flip-chip bonding regions 321, 322, 323, 324 and 325, which is formed by coating, printing, painting or pasting the dots 10 1257657. The flip chip 340 of different sizes may be disposed on the thermosetting non-conductive paste 330. The active surface 341 of the flip chip 340 has a plurality of pads 342 thereon, and the pads 342 have a plurality of bumps 343 thereon. The bumps 343 are corresponding to the flip chip fingers 313, and the bumps 343 are pressed against the flip chip fingers 3 1 3 ' by a thermal pressing step to achieve electrical connection. In addition, the chip module 3 is attached to a lower surface 311 of the metal film carrier 310 by a supporting tape 35 前 before being disposed on a wafer card to support the chip module 300 请 (see 8 and 9, according to a third embodiment of the present invention, a metal film carrier 410 can be designed to have a format of 8 metal spacers 411, which are versatile and can carry 15x1.5~ 4 〇 x4. A wafer of the specification, the metal thin film carrier 41 defines a variable flip chip bonding region. Preferably, the flip chip bonding region is divided into first flip chip bonding according to different size specifications of the wafer. a region 421, a second flip chip bonding region 422, a second flip chip bonding region 423, a fourth flip chip bonding region 424, a fifth flip chip bonding region 425, and a sixth flip chip bonding region 426. The metal pads 4ιι a portion is located in the flip-chip bonding regions 421, 422, 423, 424, 425 and 426 of the metal film carrier 41, wherein the portion of the at least one metal tab 411 is a flip chip finger. Some of the flip-chip fingers are arrogant cones. As shown in Figures 8 and 9, these The bonding fingers 412 may be provided with a first bump bonding point 42la, a second bump bonding point 422 & a third bump bonding point 423a in different flip chip bonding regions 421, 422, 423, 424, 425, 426 The fourth bump junction 42牝, the fifth bump is connected to the 1257657 junction 425a, and the sixth bump junction 426a is electrically connected to the bumps of different size wafers. Therefore, the wafers of the six different sizes can be selected. The metal film carrier 410 is fabricated into a wafer module of a wafer card, so that the metal film carrier 410 has the function of versatility of the wafer, and the convenience in the process is increased. Moreover, the metal gaskets adjacent to the metal gasket The gap between the 411 has a narrow groove 413 of equal width, and the two sides of the metal film carrier 410 have a plurality of sprocket holes 414 for convenient transportation. The lower surface of the metal film carrier 410 is attached to the lower surface. The support tape 43A prevents the metal pad 411 of the metal film carrier 410 and the flip chip 412 from being deformed or displaced during the process of assembling the wafer module to the metal film carrier 41. Compliance with the scope The scope of the patent application is subject to the scope of the invention, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the invention. 1 is a schematic cross-sectional view of a conventional wafer module in a wafer card. Fig. 2 is a cross-sectional view showing a wafer module overlying a metal thin film according to a first embodiment of the present invention. According to a first embodiment of the present invention, a top view of a metal film carrier used in the wafer module. FIG. 4 is a first embodiment of the present invention, and the wafer module is disposed on A cross-sectional view of the day card. Fig. 5 is a cross-sectional view showing another wafer module of the film of the gold 12 1257657 film according to the first embodiment of the present invention. Fig. 6 is a top view of a metal film carrier (6 pin) used in the wafer module in accordance with a second embodiment of the present invention. Figure 7: In accordance with a second embodiment of the present invention, the metal film carrier shows a top view of a wafer of different sizes that can be placed in its flip-chip bonding region. Figure 8 is a top plan view of a metal film carrier (8 pin) used in another wafer module in accordance with a third embodiment of the present invention. Figure 9. In accordance with a third embodiment of the present invention, the metal film carrier shows a top view of a wafer of different sizes that can be placed in its flip-chip bonding region. [Main component symbol description] 10 wafer card body 11 accommodating hole 12 accommodating hole 20 wafer card body 21 accommodating hole 22 accommodating hole 100 wafer module 110 double-layer soft board 111 pi substrate 112 contact pad 113 upper surface 114 Surface 115 solder mask layer 116 via 117 bump pad 120 flip chip 121 active surface 122 back side 123 bump 200 wafer module 210 metal film carrier 211 upper surface 212 lower surface 213 metal spacer 214 flip chip junction region 215 Flip chip connector 216 narrow groove 217 chain perforation 13 1257657
220 異方性導電材230 覆晶晶片 231 主動面 232 背面 233 銲墊 234 凸塊 240 支撐膠帶 300 晶片模組 310 金屬薄膜承載器 311 下表面 312 金屬墊片 313 覆晶接指 314 狹長溝槽 315 鏈齒孔 321 第一覆晶接合區 321a 第一凸塊接合點 3 22 第二覆晶接合區 322a 第二凸塊接合點 323 第三覆晶接合區 323a 第三凸塊接合點 324 第四覆晶接合區 324a 第四凸塊接合點 325 第五覆晶接合區 325a 第五凸塊接合點 330 熱固性非導電膠 340 覆晶晶片 341 主動面 342 銲墊 343 凸塊 350 支撐膠帶 410 金屬薄膜承載器 411 金屬墊片 412 覆晶接指 413 狹長溝槽 414 鏈齒孔 421 第一覆晶接合區 421a 第一凸塊接合點 14 1257657220 anisotropic conductive material 230 flip chip 231 active surface 232 back 233 pad 234 bump 240 support tape 300 wafer module 310 metal film carrier 311 lower surface 312 metal spacer 313 flip chip finger 314 narrow trench 315 Sprocket hole 321 first flip-chip junction region 321a first bump junction 3 22 second flip-chip junction region 322a second bump junction 323 third flip-chip junction region 323a third bump junction 324 fourth cladding Crystal junction region 324a fourth bump junction 325 fifth flip chip junction region 325a fifth bump junction 330 thermoset non-conductive paste 340 flip chip 341 active surface 342 pad 343 bump 350 support tape 410 metal film carrier 411 metal spacer 412 flip chip finger 413 narrow groove 414 sprocket hole 421 first flip chip junction region 421a first bump junction point 14 1257657
422 422a 423 423a 424 424a 425 425a 426 426a 第二覆晶接合區 第二凸塊接合點 第三覆晶接合區 第三凸塊接合點 第四覆晶接合區 第四凸塊接合點 第五覆晶接合區 第五凸塊接合點 第六覆晶接合區 第六凸塊接合點 支撐膠帶 430422 422a 423 423a 424 424a 425 425a 426 426a second flip-chip junction second bump junction third flip-chip junction third bump junction fourth flip-chip junction fourth bump junction fifth flip chip Junction 5th bump joint 6th flip chip joint 6th bump joint support tape 430