TWI256697B - Method for preventing wafer defect for a batch-type ion implanter spinning direction particle - Google Patents

Method for preventing wafer defect for a batch-type ion implanter spinning direction particle

Info

Publication number
TWI256697B
TWI256697B TW094102206A TW94102206A TWI256697B TW I256697 B TWI256697 B TW I256697B TW 094102206 A TW094102206 A TW 094102206A TW 94102206 A TW94102206 A TW 94102206A TW I256697 B TWI256697 B TW I256697B
Authority
TW
Taiwan
Prior art keywords
micro
wafer
rotating disk
batch
type ion
Prior art date
Application number
TW094102206A
Other languages
English (en)
Other versions
TW200603301A (en
Inventor
Wei-Cheng Lin
Original Assignee
Advanced Ion Beam Technology I
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Ion Beam Technology I filed Critical Advanced Ion Beam Technology I
Publication of TW200603301A publication Critical patent/TW200603301A/zh
Application granted granted Critical
Publication of TWI256697B publication Critical patent/TWI256697B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
TW094102206A 2004-07-08 2005-01-25 Method for preventing wafer defect for a batch-type ion implanter spinning direction particle TWI256697B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58583704P 2004-07-08 2004-07-08

Publications (2)

Publication Number Publication Date
TW200603301A TW200603301A (en) 2006-01-16
TWI256697B true TWI256697B (en) 2006-06-11

Family

ID=37614750

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094102206A TWI256697B (en) 2004-07-08 2005-01-25 Method for preventing wafer defect for a batch-type ion implanter spinning direction particle

Country Status (2)

Country Link
US (1) US7211811B2 (zh)
TW (1) TWI256697B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69618698T2 (de) * 1995-03-28 2002-08-14 Applied Materials Inc Verfahren und Vorrichtung zur In-Situ-Kontroll und Bestimmung des Endes von chemisch-mechanischen Planiervorgänge
US7448988B2 (en) * 2006-09-08 2008-11-11 Taylor Clifton T Exercise apparatus
US20230287561A1 (en) * 2022-03-14 2023-09-14 Applied Materials, Inc. Variable Rotation Rate Batch Implanter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672210A (en) * 1985-09-03 1987-06-09 Eaton Corporation Ion implanter target chamber
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle
US4965862A (en) * 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
GB8922225D0 (en) * 1989-10-03 1989-11-15 Superion Ltd Apparatus and methods relating to ion implantation
US5656092A (en) 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
US6806479B1 (en) * 2003-08-13 2004-10-19 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing implant angle variations across a large wafer for a batch disk

Also Published As

Publication number Publication date
US20060006347A1 (en) 2006-01-12
TW200603301A (en) 2006-01-16
US7211811B2 (en) 2007-05-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees