1255494 九、發明說明： 【發明所屬之技術領域】 本發明係與影像感測晶片組有關，特別是指一種可控 制光線射入數量之影像感測晶片組。 5【先前技術】 常見的各種數位影像擷取裝置，不論是數位相機、數 位攝影機，或是可照像手機等等，決定影像品質的關鍵皆 ® 在於各影像擷取裝置中所具有之影像感測器；目前主要的 影像感測器可分為感光耦合元件（Charge Coupled Device， ⑴以下稱CCD)感測器，以及互補性氧化金屬半導體 (Complementary Metal-Oxide Semiconductor，以下稱 CMOS) 感測器二種，由於CMOS感測器具有省電、體積小，以及 價格相對較為低廉的優點，因此，即使CMOS感測器之影 像品質較差，仍然被大量地使用於光學滑鼠與可照像手機 15等消費性電子產品。 • 一般的CMOS影像感測器(90)，如第四圖所示，感測 器（90)包含有一電路板(91)，電路板(91)設有一感測晶片 (92)，以及一環設於感測晶片（92)之承置座(93)，承置座(93) 的頂部設有一鏡頭組(94)，承置座(93)内部具有一濾光板 • 20 (95) ’濾光板(95)係位於鏡頭組(94)與感測晶片（92)之間，當 外界環境的光線經由鏡頭組(94)射入承置座(93)内部時，濾 光板(95)即可先過濾掉光線中的紅外線，防止射入光線中之 紅外線進入感測晶片（92)，藉以提高感測晶片（92)接收光線 後所產生之影像品質。 4 1255494 然而，在上述CMOS感測器(90)之組成結構中，由於 感測晶片（92)所能接收的光線數量，僅僅藉由承置座(％)之 鏡頭組(94)所控制，使得感測器(90)所具有的光學特性較為 單純，然法變化，同時，感測器(9〇)必須利用承置座(93)固 5定鏡頭組(94)以及濾光板(95)，因而造成整體感測器之體積 較大，g /肖費性電子產品的結構朝越來越小型化之方向設 計時，具有較大體積之感測器常會造成設計以及搭配使用 • 上的困擾，使得電子產品的體積不易縮小。 10【發明内容】 因此’本發明之主要目的乃在於提供一種影像感測晶 片組，其具有可調整射入光線之數量的功能，增加影像感 測晶片組之光學特性。 本發明之另一目的則在於提供一種影像感測晶片組， 1S其體積及面積皆較小，進而亦減少應用該晶片組之電子產 • 品的體積。 為達成前揭目的，本發明所提供之影像感測晶片組， 包含有一感測晶片、一間隔件、一板體、一濾光層，以及 一遮光層；該間隔件係設於該感測晶片，該板體之一側面 _ 2〇係設於該間隔件，該濾光層係覆設於該板體之另一側面， 而該遮光層係覆設於該濾光層，該遮光層用以控制光線射 入5亥感測晶片之數量；藉此，本發明利用遮光層之設置即 可達到增加光學特性之目的；同時，本發明整體結構之體 積及面積亦較小。 5 1255494 【實施方式】 以下，炫配合圖式舉二較佳實施例，藉以對本發明之 細部結構與功效作詳細說明，其中所用各圖式之簡要說明 5 如下： 第一圖係本發明第一較佳實施例之剖視圖； 第二圖係本發明第一較佳實施例之應用示意圖；以及 第二圖係本發明第二較佳實施例之剖視圖。 請參閱第一圖所示，係為本發明第一較佳實施例所提 10供之影像感測晶片組(1〇)，影像感測晶片組⑽包含有一感 測晶片（20)、一間隔件(30)、一板體(35)、一濾光層(36)，以 及一遮光層(37);其中：該感測晶片（2〇)係為利用 CSP(Chip1255494 IX. Description of the Invention: [Technical Field] The present invention relates to an image sensing chip set, and more particularly to an image sensing chip set capable of controlling the amount of light incident. 5 [Prior Art] Common digital image capture devices, whether digital cameras, digital cameras, or photo-enabled mobile phones, etc., the key to determining image quality is the image sense in each image capture device. Detector; currently the main image sensor can be divided into photosensitive coupled device (Charge Coupled Device, (1) hereinafter CCD) sensor, and Complementary Metal-Oxide Semiconductor (hereinafter referred to as CMOS) sensor In addition, CMOS sensors have the advantages of power saving, small size, and relatively low price. Therefore, even if the image quality of CMOS sensors is poor, they are still widely used in optical and photo mobile phones. And other consumer electronics. • A general CMOS image sensor (90), as shown in the fourth figure, the sensor (90) includes a circuit board (91), the circuit board (91) is provided with a sensing chip (92), and a ring design The mounting base (93) of the sensing wafer (92) is provided with a lens group (94) at the top of the receiving seat (93), and a filter plate inside the receiving seat (93) • 20 (95) 'filter plate (95) is located between the lens group (94) and the sensing chip (92). When the light of the external environment is injected into the interior of the mounting seat (93) via the lens group (94), the filter plate (95) can be first The infrared rays in the light are filtered to prevent the infrared rays entering the light from entering the sensing wafer (92), thereby improving the image quality produced by the sensing wafer (92) after receiving the light. 4 1255494 However, in the composition of the above CMOS sensor (90), since the amount of light that can be received by the sensing wafer (92) is controlled only by the lens group (94) of the receiving seat (%), The optical characteristics of the sensor (90) are relatively simple, and the method is changed. At the same time, the sensor (9〇) must be fixed by the mounting seat (93) and the fixed lens group (94) and the filter plate (95). Therefore, the volume of the overall sensor is large, and the structure of the g/Shaw electronic product is designed to be more and more miniaturized. The sensor with a large volume often causes design and collocation. The size of electronic products is not easy to shrink. SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide an image sensing wafer set having the function of adjusting the amount of incident light to increase the optical characteristics of the image sensing wafer set. Another object of the present invention is to provide an image sensing chip set, which has a small volume and area, which in turn reduces the volume of electronic products to which the wafer set is applied. The image sensing chip set of the present invention comprises a sensing chip, a spacer, a plate, a filter layer, and a light shielding layer; the spacer is disposed on the sensing a light-emitting layer is disposed on the other side of the plate body, and the light shielding layer is coated on the filter layer, the light shielding layer is disposed on the side surface of the plate body. The invention is used to control the amount of light incident on the 5 Hz sensing wafer; thereby, the present invention can achieve the purpose of increasing optical characteristics by using the arrangement of the light shielding layer; meanwhile, the overall structure of the present invention has a small volume and area. 5 1255494 [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described in detail, so that the detailed structure and function of the present invention will be described in detail, and the brief description 5 of each drawing is as follows: 2 is a schematic view of the application of the first preferred embodiment of the present invention; and a second view is a cross-sectional view of a second preferred embodiment of the present invention. Referring to the first embodiment, the image sensing chip set (10) provided by the first preferred embodiment of the present invention comprises a sensing chip (20) and an interval. a member (30), a plate (35), a filter layer (36), and a light shielding layer (37); wherein: the sensing chip (2〇) is a CSP (Chip)
Scale Package)方式製成之互補性氧化金屬半導體晶片 (Complementary Metal-Oxide Semiconductor, CMOS)，晶片 i5 (20)之封裝形式係為BGA形式，晶片（2〇)具有相互堆疊之 一光學感應層(21)、一矽晶層(22)，以及一結構層(23);光 學感應層(21)成形於矽晶層(22)，矽晶層(22)與結構層(23) 之間藉由環氧樹酯(EPOXY)(24)相互結合，且光學感應層 (21)利用導線(25)與設於結構層(23)底面之若干呈半球狀的 20焊接凸塊(Solder Bump)(26)相互電性連接。 該間隔件(30)具有一開口 02)，間隔件(3〇)係設於感測 晶片（20)之頂面，使感測晶片（20)之光學感應層(21)可顯露 出開口(32)。 該板體(35)係為玻璃材質製成，板體(35)之底面貼附於 6 1255494 間隔件(30)，使板體(35)與感測晶片（20)之光學感應層（21) 之間相互間隔。 該濾光層(36)係為IR-CUT形式，濾光層(36)之底面貼 附於板體(35)之頂面。 5 該遮光層（37)具有一隔離區(38),以及一位於隔離區(38) 中央之透光區（39)，遮光層（37)係貼附於濾光層（36)之頂 面，使透光區(39)之位置對應於間隔件(3〇)之開口（32)，藉 以讓外界環境中之光線僅能經由透光區（39)進入濾光層 (36) 〇 10 經由上述結構，如第二圖所示，當遮光層(37)設有一鏡 片（40)時，影像感測晶片組(1〇)即可應用於影像擷取工作， 外界環境中的光線在射入鏡片（4〇)後，光線再經由板體(35) 所貼附的遮光層(37)、濾光層(36)、透明板體(35)以及開口 (32)進入感測晶片（2〇)之光學感應層(21)，使光學感應層(21) 15可偵測到光線而產生電性變化，並且提供電氣訊號給應用 感測晶片組(1G)之電子產品使用；影像感測晶片組⑽利用 透，區(39)之面積尺寸來調整射入光學感應層(21)之光線 數里，而來自外界環境的射入光、線，在經過鏡片（4〇)以及遮 光層(37)之後可產生不同的對焦距離，亦即造成光學感應層 (21)所、_到的紐，據於習關具有濾光層之 影像感測器，本發明利用遮光層可產生多種光學特性；同 時，由於本發明中之各組成構件利用相互貼合之方式結 合，使得整體結構之高度、體積與面積皆較小。 因此，本發明即可達到增加光學特性，以及減少體積 7 1255494 及面積之目的。 另外’本發明亦可改變遮光層與濾光層之位置，如第 三圖所示，係為本發明第二較佳實施例所提供之影像感測 晶片組(50) ’其主要構件與第一較佳實施例大致相同，包含 5有一感測晶片（51)、一間隔件(52)、一板體(53)、一濾光層 (54) ，以及一遮光層(55);特點在於：濾光層（54)及遮光層 (55) 係貼合於板體(53)與間隔件(52)之間，藉以同樣可達到 本發明之發明目的。 1255494 【圖式簡單說明】 第一圖係本發明第一較佳實施例之剖視圖； 第二圖係本發明第一較佳實施例之應用示意圖； 第三圖係本發明第二較佳實施例之剖視圖；以及 第四圖係習用影像感測器之剖視圖。 【主要元件符號說明】 10影像感測晶片組 20感測晶片 21光學感應層 22矽晶層 10 23結構層 24環氧樹酯 25導線 26焊接凸塊 30間隔件 32開口 35板體 36濾光層 37遮光層 38隔離區 39透光區 40鏡片 50影像感測晶片組 15 51感測晶片 52間隔件 53板體 54濾光層 55遮光層Complementary Metal-Oxide Semiconductor (CMOS) made by Scale Package), package form of wafer i5 (20) is in BGA form, and wafer (2〇) has one optical sensing layer stacked on each other ( 21), a twin layer (22), and a structural layer (23); the optical sensing layer (21) is formed on the twin layer (22), and between the twin layer (22) and the structural layer (23) The epoxy resin (EPOXY) (24) is bonded to each other, and the optical sensing layer (21) utilizes a wire (25) and a plurality of hemispherical 20 solder bumps (Solder Bump) provided on the bottom surface of the structural layer (23) (26) ) Electrically connected to each other. The spacer (30) has an opening 02), and the spacer (3) is disposed on the top surface of the sensing wafer (20), so that the optical sensing layer (21) of the sensing wafer (20) can expose the opening ( 32). The plate body (35) is made of glass material, and the bottom surface of the plate body (35) is attached to the 6 1255494 spacer (30), so that the plate body (35) and the optical sensing layer of the sensing wafer (20) (21) ) are separated from each other. The filter layer (36) is in the form of an IR-CUT, and the bottom surface of the filter layer (36) is attached to the top surface of the plate body (35). 5 The light shielding layer (37) has an isolation region (38) and a light transmission region (39) located at the center of the isolation region (38), and the light shielding layer (37) is attached to the top surface of the filter layer (36). The position of the light transmitting region (39) is corresponding to the opening (32) of the spacer (3), so that the light in the external environment can only enter the filter layer (36) via the light transmitting region (39). The above structure, as shown in the second figure, when the light shielding layer (37) is provided with a lens (40), the image sensing chip set (1〇) can be applied to the image capturing work, and the light in the external environment is injected. After the lens (4〇), the light enters the sensing wafer via the light shielding layer (37), the filter layer (36), the transparent plate (35) and the opening (32) attached to the plate (35). The optical sensing layer (21) enables the optical sensing layer (21) 15 to detect light to produce electrical changes, and provides electrical signals to the electronic product for sensing the chip set (1G); image sensing wafer The group (10) uses the area size of the transparent area (39) to adjust the amount of light incident on the optical sensing layer (21), and the incident light and line from the external environment pass through the lens (4〇) and cover. The layer (37) can generate different focusing distances, that is, the optical sensing layer (21), the _ to the button, according to the image sensor with the filter layer, the invention can use the light shielding layer to generate a variety of Optical characteristics; at the same time, since the constituent members of the present invention are combined by mutual bonding, the height, volume and area of the overall structure are small. Therefore, the present invention can achieve the purpose of increasing optical characteristics and reducing the volume of 7 1255494 and the area. In addition, the present invention can also change the position of the light shielding layer and the filter layer, as shown in the third figure, which is the image sensing chip set (50) provided by the second preferred embodiment of the present invention. A preferred embodiment is substantially identical, comprising a sensing wafer (51), a spacer (52), a plate (53), a filter layer (54), and a light shielding layer (55); The filter layer (54) and the light shielding layer (55) are bonded between the plate body (53) and the spacer (52), so that the object of the invention can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a cross-sectional view of a first preferred embodiment of the present invention; the second drawing is a schematic view of the application of the first preferred embodiment of the present invention; and the third drawing is a second preferred embodiment of the present invention. A cross-sectional view; and a fourth cross-sectional view of a conventional image sensor. [Main component symbol description] 10 image sensing chip set 20 sensing wafer 21 optical sensing layer 22 twin layer 10 23 structural layer 24 epoxy resin 25 wire 26 solder bump 30 spacer 32 opening 35 plate 36 filter Layer 37 light shielding layer 38 isolation region 39 light transmission region 40 lens 50 image sensing wafer set 15 51 sensing wafer 52 spacer 53 plate 54 filter layer 55 light shielding layer