1254830 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種液晶顯示裝置，特別是一種畫素電極與開關元件 在不同側基板的液晶顯示裝置。 【先前技術】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to a liquid crystal display device in which a pixel electrode and a switching element are on different side substrates. [Prior Art]
液晶顯示技術(Liquid Crystal Display Technology)係近年來甚為熱門的 技術領域之一，液晶顯示裝置具有體積小、重量輕、省電及全彩色等特性， 大有取代目前陰極射線管顯示器(CRT)的潛力。 如第1圖所示，圖中所揭露的是傳統的液晶顯示裝置1⑻。液晶顯示裝 置100包括一第一基底101，其上有彩色濾光層110、共通電極17〇以及間 隙子130。彩色濾光層π〇形成於第一基板上，雖然圖中並未繪出，但彩色 濾光層110中亦包含了習知的彩色濾光片（color他er)、黑色矩陣 matrix)以及其他結構。共通電極係全面性地形成於彩色濾光層HQ之 上，作為畫素電極之對向電極，藉以控制液晶材料的運作。間隙子13〇可 以使用成膜、微影(photolithography)與蝕刻(etch)技術，在一預定的距離之 間’於彩色渡光片或黑色矩陣上形成高度大體均一的間隙子13〇，用以支撐 第-基板ιοί及第二基板102，以形成均勾的基板間距(ceii_。 請繼續參照第1圖，液晶顯示裝置100亦包括-第二基底102，其上有 開關兀件159、；[層自⑸與晝素電極16G。關元件159包括祕絕緣層 150、閘極151、透明電極跑與咖、導電金屬層脱與咖、源極⑽ =5Γ屬= 觸155、半導财層156、以及介層窗158。當電流經 由h金屬層153a進入開關元件159，透過源極⑽、 砸咖—介層㈣表社_輸機後， 極材料而被導通至位於第二基板102上的晝素電極腳， " 上的共通電極m之間相互作用形成電場，利用電場加 0773-A31436TWF(5.0) 5 1254830 ·· 錢極l6G與共通電極i7G之_液晶㈣⑽的動作來控制光 輕明暗要求而翻各麵形與動麵示的目的。 如刖所：4的傳、統液晶顯示裝置之電極結構的共通電極(⑺麵⑽ 、e)位於形色濾光片(c〇1〇r驗)基板上，而畫素電極恤以士血〇d明 α ;車歹j (a卿)基板上’和觸元件位於同_侧基板，並且和關元件的汲 2連接。—般為了節省液晶顯示裝置的電源，共通電極-般是採用交流 、’、（）的方式。但在使用觸控面板(touchPanel)的場合時，觸控面板容易 受到共，電極上電荷的吸引而產生震動，當電麼改變極性時，就會致使面 ，誠«後震動，造成人耳可聽見_音，這在手誠是有錄音功能的 寺具有收音或齡功效之裝置上是極不受到歡迎的。 【發明内容】 有鐘於此，本發明之目的在於揭露一種液晶顯示裝置，用以改善上述 之雜音問題。 依據本發明之不同實施例所述之液晶顯示裝置，包括一第一基板，一 第二基板與第—基板姉，—關元件’形成於第二基板上，―畫^電極， 形成於第-基板上，且畫素電極與開關元件電性連接，以及一^通電極， 形成於第二基板上。 依據本發明之不同實關前之μ齡裝置，包括—絕緣層覆蓋於 開關元件與第二基板，且絕緣層具有—介層窗肋露出關元件，^一 導電層形成於介層窗之側壁及底部，並接觸開關元件。 依據本發明之不同實施例所述之液晶顯示裝置，其中畫素電極更包括 一延伸部，形成於-間隙子表面，且使延伸部與開關元件上之導I層接ζ， 使得晝素電極與開關元件形成電性連接。 為讓本發明之上述目的、特徵和優點能更明顯易懂，下文特舉較佳實 施例，並配合所附圖式，作詳細說明如下： 0773-A31436TWF(5.0) 6 1254830 ~ 【實施方式】 請參照第2a®，圖巾·_本發明之―實補所繪稍彩色濾光片基 板200 ’包括第一基板2〇1，彩色濾'光層21〇，以及間隙子23〇。第一基板 2〇1大體上為透明’可使用表面平整均勻的玻璃基板、石英基板或塑膠基板 所構成。¥色濾、光層210形成於第一基板上，雖然圖中並未繪出，但彩色 濾、光層210中亦包含了彩色攄光片（▲ filter)、黑色矩陣(恤淡贈也)以及 其他習知結構。黑色矩陣可使關如金屬鉻薄麟合成旨等遮光材料， φ 细鉻遮光層法、組合法、電麟、樹脂遮光法以及背面微料光法所構 成。彩色濾光片可使用的顏料或染料，透過染色法、顏料分散法、印刷法、 乾膜法或電著法等製程將紅、綠、藍三原色分別形成於第一基板观上。 雖上述貫施例係將彩色濾光層21〇形成於第一基板2〇1上，然而本發明不 限於此，亦可將彩色濾光層21〇形成於容後論述的第二基板3〇2上，並依 據液晶顯示裝置之應用領域以及液晶動作機制的不同，彩色遽光層21〇可 以是反射型的彩色濾光片（reflective咖〇fc〇1〇r filter)、平面切換型的彩色 濾光片（color filter for in-plane switching)、陣列電路一體化的彩色濾光片 (color filter on array)以及多區塊垂直配向型的彩色濾光片（c〇l〇r fiit^細 I multi-domain vertical alignment)。間隙子可以使用成膜、微影 (photolithography)與蝕刻(etch)技術，在一預定的距離之間，例如每相鄰一個 晝素形成-間隙子，於彩色濾光片或黑色矩陣上形成高度大體均一的間隙 子230,用以支樓第-基板201及容後論述的第二基板3〇2，以形成均勾的 基板間距(cell gap)。 在間隙子230形祕，接著，請參照第2b圖，利用驗物咖麵） 或化學氣相沉積法(chemical vapor deposition; CVD)等成膜技術，在如第％ 圖所述的基板上形成透明電極252，透明電極可以是銦錫氧化物(祕啦τώ 0xide;IT0)或銦辞氧化物(IZ0)等一或多層金屬氧化物薄膜。然後，如第九 0773-A31436TWF(5.0) 7 1254830 圖所示，利用光阻劑塗佈，配合紫外線微影技術、電子束微影技術、雷射 束微影技術、鮮束微影猶及X 微影餘轉賴術，_兹二技 術如電漿钱刻法(plasma etching)與反應性離子蝕刻法扣扣細碰etching)等 乾式侧法(diy滅ng)，或綱祕或祕騎輕_龍式侧法 (wet etching)，將透明電極252定義成所需圖案以形成畫素電極26〇及晝素 電極之延伸部260a。雖然圖中並未繪出，但畫素電極26〇、晝素電極:延 伸部260U及彩色遽光層210之表面上亦可形成一配向層，射酉电己向層可 使用如二氧化矽(Sl〇2)和聚醯胺類(p〇iyimide)等無機材料和有機高分子材 料，或PVA類和PET類的高分子膜，透過目前習用的凹版印刷法㈣聽 coating method)形成一厚度大體上介於5〇〇至1〇〇〇埃的薄層於基板上，並 配合後續的配向餘，例如面磨法(Rubbing)、斜方蒸著法、高^子膜延= 法以及光配向法等配向技術，用以使後續注入的液晶於第一、第二基板間 能夠規則地排列。 ^第3a _示’圖中係根據本發明之—實施例解示的陣列基板勘， 包括第二基板302、電路層303、絕緣層340以及開關元件359。第二某板 搬大體上為透明，可使用表面平整均勻的玻璃基板、石英基板或瓣絲 所構成。電路層3〇3形成於第二基板3〇2上，而開關元件挪則形成於電 路層3财，雖然圖中並未緣示，但電路層3〇3中亦包含，例如閘極線(_ lme)、-樣_ta㈣、細電晶體之關元伽叫倾層㈣ ㈣及透明導電層等結構。之後，在電路層3〇3上形成絕緣層，作為 與其他元件或電路裝置電性隔絕之用。 接著，如第3b圖所示’利用微影與侧技術，在、絕緣層340中形成一 介層窗358，並如第3c圖所示利用成膜技術，在介層窗跑之内壁、底部 及絕緣層細之表面上形成_透明電極352，透明電極可以是轉氧化物 或銦鋅乳化物(IZ0)等一或多層金屬氧化物薄膜。然後，如第^圖所 不’利用微影與侧技術，將透明電極Μ:定義成所需圖案以形成共通電 0773-A31436TWF(5.0) 8 1254830 Η，但共通電極370、導電層357以 用以使後續注入的液晶於第一、第 極370與導電層357。雖然圖中並未繪出， 及絕緣層之表面上亦可形成一配向層，用, 二基板間能夠規則地排列。 雖上述實施例餘透明電極形成於介層窗358之内壁、底部及絕緣層 之表面上’然而本發明不限於此，亦職喊銀觀射性金屬形成^ ^ 358之内壁、底部或絕緣層34〇之表面；亦可將銦錫氧化物(卿或姻 鋅=化鄉ΖΟ)等透曰月電極先形成於介層窗观之内壁、底部或絕緣層細 之·、面’再將域銀等反射性金屬全面性地或部分地形成於透明電極之表 面；亦可將銘或銀等反射性金屬形成於介層窗358之内壁、底部及嗯缘層 340之部分表面，再將銦錫氧化物_或銦辞氧化物_等透 : 於储窗358之内壁、底部及絕緣層細之另—部分表面上^村係 以覆蓋-導電層357的方式將導電材料形成於介層窗观之表面上，然而 本發明不限於此，亦可糊紙_反射或鹏氧化物(ιτ〇滅銅 ::物_)等透明電極填充於介層窗358之中的方式，以達到電性連接 如第5a-5e圖所示’圖中係根據本發明之實施例所繪示之導電材料开 於陣列基板上的數種可能情形之—例。如第5a _示，透明電極伽㈣ ^於陣舰板500上以形成共通電極57〇 ;亦可如第5b圖所示，將銘或銀 :、反射性金屬570b形成於陣列基板上以形成共通電極耽亦可如第 5c圖所示，先於陣列基板上形成透明電㈣％，接著在透明電極㈣ 之表面上全面性地或部分地沉積反射性金屬瑜以形成共通電極別；亦 可如第5d圖所示’在陣列基板500的部分表面上形成透明電極伽，在陣 列基板5〇0的另-部絲面上沉積反射性金屬通以形成共通電極別， 且透明電極570a與反射性金屬57Gb之間互相電性連接；亦可如第^圖所Liquid Crystal Display Technology (CLI) is one of the most popular technical fields in recent years. The liquid crystal display device has the characteristics of small size, light weight, power saving and full color, which greatly replaces the current cathode ray tube display (CRT). potential. As shown in Fig. 1, the conventional liquid crystal display device 1 (8) is disclosed. The liquid crystal display device 100 includes a first substrate 101 having a color filter layer 110, a common electrode 17A, and a gap 130. The color filter layer π is formed on the first substrate. Although not shown in the drawing, the color filter layer 110 also includes a conventional color filter (color er), a black matrix matrix, and the like. structure. The common electrode is formed integrally on the color filter layer HQ as a counter electrode of the pixel electrode, thereby controlling the operation of the liquid crystal material. The spacer 13 can be formed by film formation, photolithography and etching techniques to form a highly uniform gap 13 on a color or black matrix between predetermined distances. Supporting the first substrate ιοί and the second substrate 102 to form a uniform substrate pitch (ceii_. Referring to FIG. 1 again, the liquid crystal display device 100 also includes a second substrate 102 having a switch member 159 thereon; The layer is from (5) and the halogen electrode 16G. The closing element 159 comprises a secret insulating layer 150, a gate 151, a transparent electrode running and a coffee, a conductive metal layer, a source (10) = 5 Γ = touch 155, a semi-conductive layer 156 And a via 158. When the current enters the switching element 159 via the h metal layer 153a, and passes through the source (10), the dielectric layer (4), the conductive material is turned on to the second substrate 102. The common electrode of the halogen electrode, the common electrode m on the " interacts to form an electric field, and the light field is controlled by the action of the electric field plus 0773-A31436TWF(5.0) 5 1254830 ·· Qianji l6G and the common electrode i7G_liquid crystal (4) (10) The purpose of turning each face and moving face is required.刖所: The common electrode of the electrode structure of the liquid crystal display device of 4 ((7) face (10), e) is located on the color filter (c〇1〇r test) substrate, and the pixel electrode shirt is bloody d α α; 歹 ( j (a qing) on the substrate 'and the touch element is located on the same side substrate, and connected to the 汲 2 of the off component. Generally, in order to save power of the liquid crystal display device, the common electrode - generally uses AC, ', (). However, when using a touch panel (touchPanel), the touch panel is easily affected by the common attraction of the electrodes, and when the polarity changes, it will cause the surface. After the vibration, the human ear can hear the _ sound, which is extremely unpopular in the device where the handwriting is a function of the radio or the age. [Invention] The purpose of the present invention is to A liquid crystal display device for improving the above-mentioned noise problem is disclosed. The liquid crystal display device according to various embodiments of the present invention includes a first substrate, a second substrate and a first substrate, and the -off element is formed on On the second substrate, the "paint" electrode Formed on the first substrate, and the pixel electrode is electrically connected to the switching element, and the first electrode is formed on the second substrate. The device according to the present invention is covered by an insulating layer. The switching element and the second substrate, and the insulating layer has a via rib exposed to the off component, and a conductive layer is formed on the sidewall and the bottom of the via and contacts the switching element. According to various embodiments of the present invention In the liquid crystal display device, the pixel electrode further includes an extension portion formed on the surface of the spacer, and the extension portion is connected to the layer I on the switching element, so that the pixel electrode is electrically connected to the switching element. The above described objects, features and advantages of the present invention will become more apparent from the description of the preferred embodiments of the invention. Referring to FIG. 2a®, the drawing of the slightly colored filter substrate 200' includes a first substrate 2〇1, a color filter 'optical layer 21〇, and a spacer 23〇. The first substrate 2〇1 is substantially transparent. It can be formed using a glass substrate, a quartz substrate or a plastic substrate having a uniform surface. The color filter and the light layer 210 are formed on the first substrate. Although not shown in the figure, the color filter and the light layer 210 also include a color light-emitting sheet (▲ filter) and a black matrix (the shirt is also provided). And other conventional structures. The black matrix can be made up of a light-shielding material such as a metal chrome thin lining, a φ fine chrome mask method, a combination method, an electric lining, a resin shading method, and a back micro-light method. The pigment or dye which can be used for the color filter is formed on the first substrate by a dyeing method, a pigment dispersion method, a printing method, a dry film method or an electrophoresis method, respectively. Although the above-described embodiment forms the color filter layer 21 on the first substrate 2〇1, the present invention is not limited thereto, and the color filter layer 21〇 may be formed on the second substrate 3 described later. 2, and depending on the application field of the liquid crystal display device and the liquid crystal action mechanism, the color light-emitting layer 21 can be a reflective color filter (reflective coffee machine fc〇1〇r filter), plane switching type color Color filter for in-plane switching, color filter on array, and multi-block vertical alignment type color filter (c〇l〇r fiit^ fine I Multi-domain vertical alignment). The spacers may use film formation, photolithography, and etch techniques to form a height between a predetermined distance, such as each adjacent pixel formation-gap, on a color filter or black matrix. A substantially uniform spacer 230 is used to support the first substrate 201 and the second substrate 3〇2 discussed later to form a uniform cell gap. In the shape of the spacer 230, then, refer to the 2b drawing, using the film surface technology or chemical vapor deposition (CVD) film forming technique, on the substrate as shown in the Figure %. The transparent electrode 252, the transparent electrode may be one or more metal oxide films such as indium tin oxide (ITO) or indium oxide (IZ0). Then, as shown in the figure of ninth 0773-A31436TWF(5.0) 7 1254830, coated with photoresist, combined with ultraviolet lithography, electron beam lithography, laser beam lithography, fresh beam lithography and X The lithography is transferred to the technology, such as the plasma etching method and the reactive ion etching method, and the dry side method (diy ng), or the secret or secret light _ Wet etching, the transparent electrode 252 is defined in a desired pattern to form the pixel electrode 26 and the extension portion 260a of the halogen electrode. Although not shown in the drawing, an alignment layer may be formed on the surface of the pixel electrode 26, the halogen electrode: the extension portion 260U and the color light-emitting layer 210, and the sputtering layer may be used as a ruthenium dioxide layer. (Sl〇2) and polyamines (p〇iyimide) and other inorganic materials and organic polymer materials, or PVA-based and PET-based polymer films, through the conventional gravure printing method (4) listening coating method to form a thickness A thin layer of substantially 5 〇〇 to 1 〇〇〇 Å on the substrate, and is used in conjunction with subsequent alignment, such as rubbing, oblique evaporation, high film extension = method, and light An alignment technique such as an alignment method is used to enable the subsequently injected liquid crystal to be regularly arranged between the first and second substrates. The third embodiment of the present invention includes an array substrate according to an embodiment of the present invention, including a second substrate 302, a circuit layer 303, an insulating layer 340, and a switching element 359. The second plate is generally transparent, and can be formed by using a glass substrate having a uniform surface, a quartz substrate, or a curtain. The circuit layer 3〇3 is formed on the second substrate 3〇2, and the switching element is formed on the circuit layer 3. Although not shown in the drawing, the circuit layer 3〇3 also includes, for example, a gate line ( _ lme), -like _ta (four), the structure of the fine transistor is called the dip layer (four) (four) and the transparent conductive layer and other structures. Thereafter, an insulating layer is formed on the circuit layer 3〇3 for electrical isolation from other components or circuit devices. Next, as shown in FIG. 3b, a via window 358 is formed in the insulating layer 340 by using the lithography and side technology, and the film forming technique is used as shown in FIG. 3c, and the inner wall and the bottom of the via window are run. A transparent electrode 352 is formed on the surface of the insulating layer, and the transparent electrode may be one or more metal oxide films such as a conversion oxide or an indium zinc emulsion (IZ0). Then, as shown in the figure, the transparent electrode Μ: is defined into a desired pattern to form a common power of 0773-A31436TWF(5.0) 8 1254830 Η, but the common electrode 370 and the conductive layer 357 are used. The subsequently injected liquid crystal is applied to the first and second electrodes 370 and the conductive layer 357. Although not shown in the drawing, and an alignment layer may be formed on the surface of the insulating layer, the two substrates can be regularly arranged. Although the transparent electrode of the above embodiment is formed on the inner wall, the bottom portion and the surface of the insulating layer of the via 358, the present invention is not limited thereto, and the inner wall, the bottom layer or the insulating layer of the silver metal is formed. 34 〇 surface; can also be indium tin oxide (Qing or marriage zinc = Huaxiang ΖΟ) through the moon electrode first formed in the inner wall of the mesoscopic window, the bottom or the insulating layer is fine, the surface 're-domain A reflective metal such as silver is formed on the surface of the transparent electrode in a comprehensive manner or in part; a reflective metal such as Ming or silver may be formed on the inner wall of the via window 358, the bottom portion and the surface of the edge layer 340, and then indium. Tin oxide _ or indium oxide _ is transparent: on the inner wall, the bottom of the window 358 and the other part of the surface of the insulating layer, the conductive material is formed in the via window by covering the conductive layer 357 On the surface of the image, however, the present invention is not limited thereto, and a transparent electrode such as a paste paper or a reflective oxide (such as copper or copper) may be filled in the via 358 to achieve electrical properties. Connections as shown in Figures 5a-5e are shown in the drawings according to embodiments of the present invention. Examples of several possible situations in which the electrical material is on the array substrate. As shown in FIG. 5a, the transparent electrode gamma (4) is formed on the battle board 500 to form the common electrode 57A; or as shown in FIG. 5b, the inscription or silver: reflective metal 570b is formed on the array substrate to form The common electrode 耽 can also form a transparent electric (four)% on the array substrate as shown in FIG. 5c, and then deposit a reflective metal on the surface of the transparent electrode (4) to form a common electrode. As shown in FIG. 5d, a transparent electrode galvanic is formed on a part of the surface of the array substrate 500, and a reflective metal pass is deposited on the other surface of the array substrate 5 〇0 to form a common electrode, and the transparent electrode 570a and the reflection are formed. The metal 57Gb is electrically connected to each other;
示’在陣列基板500的部分表面上形成透明電極57〇a，在陣列基板的 另一 〇773-A31436TWF(5.0) 9 1254830 2與反雜金屬57Gb之間並幽目紐連制 壯，村彻縣健賴耻之麵電姉輕面板周圍 後，再連接至共通線的方式。 經過前述製程而形成彩色濾光片基板細與陣列基板300後，接著， dr〇P flll； ㈣形成於形色滤光片基板與陣列基板之間，並將兩基板組立貼合，以形 成t第㈣所補液晶顯示健·。在組立齡的錄巾，可使用熱魏 型魏，脂(Epoxy)封合劑或紫外光硬化型封合劑作為封合材料，並經由準 位光罩等解程序，將彩色濾、以基板舆_基板鱗貼合，形成如第4 圖所示的液晶顯示裝置400。 如第4圖所示，圖中顯示的是根據本發明之一實施例，在前述製程所 製造的彩色濾光>|基板2()()與陣列基板之間形成液晶材料並組立貼合 之後的液晶顯示裝置400,包括如前所述的第一基板4〇1、彩色濾光層41〇、 液晶材料420、間隙子430、晝素電極460、第二基板402、絕緣層44〇、介 層窗458、導電層457以及共通電極470。液晶材料420可以包括向列型液 曰曰(Nematic)、層列型液晶(Smetic)、碟型液晶(Discotic)、以及膽固醇型或螺 方疋向列型液晶(Cholesteric)，而液晶化合物的種類可以包括有機鹽、月旨肪酸 類及其衍生物、芳香族酸類及其衍生物、_類和酮類及其衍生物、多環碳 化氫類及其衍生物、Azomethine類化合物、Azinne類和Glyoxal類及其衍 生物、Bisazomethine、Azo類化合物、Azomethine-Azo-類化合物、Azoxy 類化合物、Disulphido類化合物以及Sterol Steroid類及其衍生物等。 請繼續參照第4圖，開關元件459包括閘極絕緣層450、閘極451、透 明電極452a與452b、導電金屬層453a與453b、源極454a、汲極454b、通 道保護層455、半導體矽層456、以及介層窗458，此開關元件459之各部 分元件可使用微影、钱刻與成膜技術加以形成，例如濺鍛法(sputtering)、化 0773-A31436TWF(5.0) 10 1254830 學氣相沉積法(chemical vapor deposition; CVD)或電漿增強型化學氣相沉積 法(plasma enhanced chemical vapor deposition; PECVD)等成膜技術，以及光 阻劑塗佈，配合紫外線微影技術、電子束微影技術、雷射東微影技術、離 子束微影技術及X射線微影技術等曝光技術，加上蝕刻技術如電漿蝕刻法 (plasma etching)與反應性離子蝕刻法(reactive i〇n etching)等乾式姓刻法 etching)，或利用酸性或鹼性溶液為蝕刻液的濕式蝕刻法(wet etching)。其中 第4圖之開關元件459為下閘極薄膜電晶體，亦可為上閘極之薄膜電晶體。 當電流經由導電金屬層453a進入開關元件459，透過源極454a、半導體矽 層456、汲極454b與透明電極452b而進入介層窗之上的導電層457後，電 流可經由間咏子430上之晝素電極的延伸部偷而被導通至位於第一基板 401上的晝素電極460，並與第二基板4〇2上的共通電極之間相互作用而形 成電場，利用電場加以控制晝素電極舆共通電極之間的液晶材料 420的動作來控制光通過量，藉以調整明暗要求而達到各種圖形與動晝顯示 的目的。 雖上述實施例係將晝素電極與開關元件形成於不同侧基板上，然而本 發明不限於此，亦可將部份畫素電_成於與關元件_之基板上，而A transparent electrode 57〇a is formed on a part of the surface of the array substrate 500, and another 〇773-A31436TWF(5.0) 9 1254830 2 and the anti-hybrid metal 57Gb of the array substrate are sturdy together. After the county is behind the light panel, it is connected to the common line. After the color filter substrate is thinned and the array substrate 300 is formed by the foregoing process, then dr〇P flll; (4) is formed between the color filter substrate and the array substrate, and the two substrates are assembled to form a t The liquid crystal display in the fourth (4) is displayed. In the group-aged towel, a hot Wei-type Wei, Epoxy sealant or UV-curable sealant can be used as a sealing material, and the color filter is applied to the substrate by a solution such as a retort. The substrate scales are bonded to each other to form a liquid crystal display device 400 as shown in Fig. 4 . As shown in FIG. 4, there is shown a liquid crystal material formed between the color filter>|substrate 2()() manufactured by the above process and the array substrate, and assembled in accordance with an embodiment of the present invention. The subsequent liquid crystal display device 400 includes the first substrate 4, the color filter layer 41, the liquid crystal material 420, the spacer 430, the halogen electrode 460, the second substrate 402, and the insulating layer 44, as described above. The via 458, the conductive layer 457, and the common electrode 470. The liquid crystal material 420 may include nematic liquid Nematic, smectic liquid crystal, discotic liquid crystal, and cholesteric or sinusoidal liquid crystal (Cholesteric), and types of liquid crystal compounds. These may include organic salts, fatty acids and derivatives thereof, aromatic acids and derivatives thereof, ketones and ketones and derivatives thereof, polycyclic hydrocarbons and derivatives thereof, Azomethine compounds, Azinne and Glyoxal Classes and derivatives thereof, Bisazomethine, Azo compounds, Azomethine-Azo-class compounds, Azoxy compounds, Disulphido compounds, and Sterol Steroids and derivatives thereof. Referring to FIG. 4, the switching element 459 includes a gate insulating layer 450, a gate 451, transparent electrodes 452a and 452b, conductive metal layers 453a and 453b, a source 454a, a drain 454b, a channel protective layer 455, and a semiconductor germanium layer. 456, and via 458, each part of the switching element 459 can be formed by using lithography, engraving and film forming techniques, such as sputtering, and the 0773-A31436TWF (5.0) 10 1254830 Film formation techniques such as chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD), as well as photoresist coating, UV lithography, electron beam lithography Exposure techniques such as technology, laser lithography, ion beam lithography, and X-ray lithography, plus etching techniques such as plasma etching and reactive ion etching Or dry etching, or wet etching using an acidic or alkaline solution as an etching solution. The switching element 459 of FIG. 4 is a lower gate thin film transistor, and may also be a thin film transistor of the upper gate. When a current enters the switching element 459 via the conductive metal layer 453a, passes through the source 454a, the semiconductor buffer layer 456, the drain 454b, and the transparent electrode 452b to enter the conductive layer 457 over the via, the current can pass through the interlayer 430. The extension of the pixel electrode is stealthly conducted to the halogen electrode 460 located on the first substrate 401, and interacts with the common electrode on the second substrate 4〇2 to form an electric field, and the electric field is used to control the halogen The action of the liquid crystal material 420 between the electrodes and the common electrode controls the light throughput, thereby adjusting the brightness and darkness requirements to achieve various graphic and dynamic display purposes. Although the above embodiment is to form the halogen electrode and the switching element on different side substrates, the present invention is not limited thereto, and a part of the pixels may be electrically formed on the substrate of the AND element.
另-部份畫素咖峨於與關元件不_之基板上，形成兩側基板上 皆有畫素電極的型態。 根據本發日狀-實關所製造之㈣顯示裝聽料通電極形成於睁 =板上，而將晝素電極利用間隙子上之導電性材質電性連接而形成於彩 色濾光片基板上，並且和另—側陣列基板上之開關元件的沒極電性連接， 雜制關元件位於不關基板上。由於液晶顯示裝置是採用列反 ^^dme inversionK^|W;,^ , ^日狀-實施觸製造的液晶顯示裝置之畫素電極電_極性在面板上 將王現父錯分佈的型態，平均起來總電 ^ ,人 书仃馮令所以不會對例如觸控面板 產生及？丨力，不會使面板產生震動，_可有效改善此雜音問題。 〇773-A31436TWF(5.0) 11 1254830 雖然本發明已峨佳實施_露如上，然其並翻 7習此者，在不麟本伽之精_圍 _鱼錦住 因此本發日狀倾範圍當視後社申請專概 / I潤飾， -定者為準 【圖式簡單說明】 第1圖係繪示出傳統液晶顯示裝置之電極結構。 第2a-2c圖係根據本發明之一實施 基板上的職步驟。 “、素％極細色濾光片 %例所繪示之共通電極於陣列基板 上 第3a-3d圖係根據本發明之一實 的形成步驟。 ^ 4圖係根據本發明之-實施例所緣示的液晶顯示裝置剖面圖。 第5a-5e圖係根據本發日月之—實施例所繪示之共通電極於陣列基板上 的可能配置情形之一例。In addition, some of the pixels are formed on the substrate which is not connected to the component, and the form of the pixel electrode is formed on both sides of the substrate. According to the present invention, (4) the display device is formed on the 睁= plate, and the halogen electrode is electrically connected to the color filter substrate by electrically connecting the conductive material on the spacer. And the non-polar electrical connection with the switching elements on the other side array substrate, the miscellaneous closing elements are located on the off substrate. Since the liquid crystal display device adopts a column inverse ^^dme inversionK^|W;, ^, ^, the shape of the pixel electrode of the liquid crystal display device manufactured by the touch-sensitive device is erroneously distributed on the panel. On average, the total power ^, the book of people, Feng Ling, so will not produce for example touch panels?丨力, will not make the panel vibrate, _ can effectively improve this noise problem. 〇 773-A31436TWF(5.0) 11 1254830 Although the present invention has been implemented as well as the above, it is also the same as the one who has learned this, in the case of the 麟 本 伽 之 _ _ _ _ _ _ _ _ _ _ _ _视视社Applications / I retouch, - the standard is accurate [illustration of a simple description] Figure 1 shows the electrode structure of a conventional liquid crystal display device. Figures 2a-2c illustrate the steps performed on a substrate in accordance with one of the present invention. The common electrode shown in the example of the %% fine color filter is shown in Fig. 3a-3d on the array substrate according to a forming step of the present invention. ^ 4 is based on the embodiment of the present invention. A cross-sectional view of the liquid crystal display device shown in Fig. 5a-5e is an example of a possible arrangement of the common electrode on the array substrate according to the embodiment of the present invention.
【主要元件符號說明】 100、400〜液晶顯示裝置； 102、302、402〜第二基板； 120、420〜液晶材料； 140、340、440〜絕緣層； 151、451〜閘極； 1(U、2(U、401 〜第一基板； 110、210、410〜彩色濾光層 130、230、430〜間隙子； 150、450〜閘極絕緣層； 152a、152b、252、352、452a、452b、570a〜透明電極； 153a、153b、453a、453b〜導電金屬層； 154a、454a^源極； 155、455〜通道保護層； 357、457〜導電層； 159' 359'459〜開關元件； 154b、454b〜汲極； 156、456〜半導體矽層； 158'358'458〜介層窗； 160、260、460〜晝素電極； 0773-A31436TWF(5.0) 12 1254830 260a、460a〜晝素電極之延伸部；170、370、470、570〜共通電極； 〜 200〜彩色濾光片基板； 300、500〜陣列基板； 303〜電路層； 570b〜反射性金屬。[Description of main components] 100, 400~ liquid crystal display device; 102, 302, 402~ second substrate; 120, 420~ liquid crystal material; 140, 340, 440~ insulating layer; 151, 451~ gate; 1 (U 2, U, 401 ~ first substrate; 110, 210, 410 ~ color filter layer 130, 230, 430 ~ gap; 150, 450 ~ gate insulating layer; 152a, 152b, 252, 352, 452a, 452b 570a~transparent electrode; 153a, 153b, 453a, 453b~ conductive metal layer; 154a, 454a^ source; 155, 455~ channel protective layer; 357, 457~ conductive layer; 159' 359'459~ switching element; 454b~汲 pole; 156, 456~ semiconductor germanium layer; 158'358'458~ via window; 160, 260, 460~ quinone electrode; 0773-A31436TWF(5.0) 12 1254830 260a, 460a~ 昼 电极Extension; 170, 370, 470, 570~ common electrode; ~ 200~ color filter substrate; 300, 500~ array substrate; 303~ circuit layer; 570b~ reflective metal.
13 0773-A31436TWF(5.0)13 0773-A31436TWF(5.0)