1254401 l662ltwf.d〇c/g 九、發明說明： 【發明所屬之技術領域】 3本發明是有關於一種光罩與檢驗此光罩的方法，且特 別是有關於一種光罩與該光罩之層次間對準度的量測方 法。 、 【先前技術】 ^微影製程(Photolithography)為半導體製程中最重要的 • ^驟之―，其目的為將所設計的圖案轉移至晶圓上。微影 製程的重要工具之一為光罩(Photomask)。光罩的圖案為= 圖案轉移至晶圓的媒介，因此，光罩圖案的正確性將直接 影響到微影製程的結果。 在光罩的製作過程中，為了降低光罩本身在資料處理 曰寸所品耗費的資料處理時間，一般而言會將完整的光罩圖 案分成二個以上的層次(Layer)以儲存成數位資料，而進行 圖案寫入時係依不同的層次將資料所儲存的圖案分別寫在 光罩上。在經過各層次的圖案寫入之後，光罩上就形成了 鲁完整的光罩圖案。此外，依各層次寫入圖案時，對於每一 層次而言，也於光罩上寫入了對應之位置確認指標 (Position Checking Index，PCI)，此些 PCI 的功能係用以進 行量測位準步驟，以分別量測各層次之圖案的位準度。 圖1所繪示為習知一種光罩的示意圖。於圖1中，在 光罩100的基板110上具有主電路(main circuit)圖形層120 以及周邊(frame)圖形層130，依照上述，此主電路圖形層 區120與周邊圖形層區130係分別屬於不同的層次並分別 5 J254401twfd〇c/g 寫入於光罩100上而形成的。並且，在基板110上還形成 有對準標記14〇與對準標記150。其中對準標記14〇與主 電路圖形層區120屬於同一個層次，用來測量主電路圖形 層區120的位準度，而對準標記15〇與周邊圖形層區i刈 屬於同一個層次，用來測量周邊圖形層區13〇的位準度。 、然而，在光罩的製作過程中，由於資料處理錯誤、不 適當的PCI層次分配、由於計算錯誤所導致的Ρα座'护偏 移等問題，有可能會造成其中的某一層次的圖案實際:發 生了偏移，卻在該層次的PCI對準量測無法正確量測出^ 的情形，此時由於各層二欠的對準標記僅能針對所對應之声 -人的圖案進行對準量測，因此料量_結果會將整個光 罩圖案判定為正確，從而無法發現光罩之層次間發生對準 度偏移的問題。 【發明内容】 對準的目的就是在提供—種光如及光罩之層間 ^度的！測方法，能夠量測出各層次間的 準’以確認所製作之随能夠符合所設計的規格。、 本發明提丨-種光罩，其係由基板、圖案、 、、且斤構成。其中，圖案形成於此基板上，圖案係由 ，=二圖形層所構成。多數個對準標記師成於』 成。第係由第一對準標記與第二對準標記所構 對準耗記用於對第—圖形層進行量測位準，第二 ㈣—解標記_—固定距_環繞第-對準 軚°己，用於對第二圖形層進行位準。 6 1254401 16621twf.doc/g 依^本务明的較佳實施例所述的，斤 層、第二圖形層、第一對準標 罩：、中弟-圖形 板之同一平面上。 ^ 弟一對準標記位於基 依照本發明的較佳實施例 標記=為矩形，第二對準標記例如為ί形其中第一對準 本杳明再提出一種光罩之声1254401 l662ltwf.d〇c/g IX. Description of the Invention: [Technical Field of the Invention] 3 The present invention relates to a reticle and a method for inspecting the reticle, and more particularly to a reticle and a reticle A method of measuring the degree of alignment between layers. [Prior Art] ^ Photolithography is the most important process in semiconductor manufacturing. Its purpose is to transfer the designed pattern to the wafer. One of the important tools of the lithography process is the photomask. The pattern of the mask is = the medium that the pattern is transferred to the wafer, so the correctness of the mask pattern will directly affect the results of the lithography process. In the process of making the reticle, in order to reduce the data processing time of the reticle itself in the data processing, the complete reticle pattern is generally divided into two or more layers to store digital data. When the pattern is written, the patterns stored in the data are respectively written on the mask according to different levels. After the pattern of each level is written, a complete mask pattern is formed on the mask. In addition, when writing patterns according to each level, for each level, a corresponding Position Checking Index (PCI) is also written on the mask, and the functions of these PCIs are used for measuring positions. A quasi-step to measure the level of the pattern of each level. FIG. 1 is a schematic view of a conventional photomask. In FIG. 1, a main circuit pattern layer 120 and a frame pattern layer 130 are disposed on the substrate 110 of the reticle 100. According to the above, the main circuit pattern layer region 120 and the peripheral pattern layer region 130 are respectively It belongs to different levels and is formed by writing 5 J254401twfd〇c/g on the mask 100. Further, an alignment mark 14A and an alignment mark 150 are formed on the substrate 110. The alignment mark 14A and the main circuit pattern layer area 120 belong to the same level for measuring the level of the main circuit pattern layer area 120, and the alignment mark 15〇 and the peripheral pattern layer area i刈 belong to the same level. It is used to measure the level of the surrounding pattern layer area 13〇. However, in the process of making the mask, due to data processing errors, improper PCI level assignment, and problems caused by calculation errors, it may cause a certain level of pattern actuality. : An offset occurs, but the PCI alignment measurement at this level cannot correctly measure the situation of ^. At this time, the alignment mark of each layer can only be used for the corresponding sound-human pattern. Therefore, the amount _ result will judge the entire mask pattern to be correct, so that the problem of alignment offset between the layers of the mask cannot be found. SUMMARY OF THE INVENTION The purpose of the alignment is to provide a kind of light such as the layer between the mask and the mask! The measurement method can measure the accuracy between the levels to confirm that the manufactured specifications can conform to the designed specifications. The present invention provides a reticle, which is composed of a substrate, a pattern, and a jin. The pattern is formed on the substrate, and the pattern is composed of a = two pattern layer. Most of the alignment markers are made into. The first system is aligned with the first alignment mark and the second alignment mark for the measurement level of the first pattern layer, and the second (four)-de-marking_-fixed distance_surrounding the first alignment °, used to level the second graphics layer. 6 1254401 16621twf.doc/g According to the preferred embodiment of the present invention, the pinch layer, the second pattern layer, the first alignment mask: and the middle-figure plate are on the same plane. ^ The first alignment mark is located at the base. According to a preferred embodiment of the present invention, the mark = a rectangle, and the second alignment mark is, for example, a y-shaped shape, wherein the first alignment, Benming, proposes a sound of a reticle
Sit括基板、圖案、多數二準標::量::法二 形成方;基板上，圖案係由第— 一；：：： 成，每—個對準標記組係由第„對_^圖1所構 ί汽「用己準標記間隔—固定距離的環繞第一對 卓己用於弟一圖形層進行量測位準。 方光罩上之第一對準標記 仏5己由弟—對耗記與第二解標記的相對^ =移來判斷第-圖形層與第二圖形層的相對位置是否偏 =本：_較佳實施例所述的光罩之層間對 里二、、中弟一圖形層、第二圖形層、第-對準俨』己 以及第二對準標記位於基板之同一平面上。丨丰仏己 量』之層間對準度的 記例如為框形。f丰‘己例如為矩形，而第二對準標 依照本發明的較佳實施例所述的光罩之層 的夏測方法，其中檢測光罩上之第—對準標記與第二^ 7 1254401 16621twf.doc/g 才示δ己的儀為例如為干涉儀。 由上述可知，由於本發明將用於量測不同層次的對準 標記設計為-個解標記組，並謂鮮標記財的第一 對準標記與^二對準標記設計為具有特定的位置對應關 係，因此，藉由量測出光罩上之第一對準標記與第二對準 標記的相對㈣是否產生偏移，就㈣得知光罩上之不同 層-人間的圖案疋否產生偏移，從而能夠確認所製作之圖案 能夠符合所設計的規格。 為4本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 圖2所繪不為本發明之一較佳實施例的一種光罩的示 意圖。請苓照圖2，此光罩200至少包括基板21〇、配置於 基板210上的一個圖案以及多數個對準標記組24〇，其中 該基板210例如是玻璃基板、塑膠基板或是由其他適當之 可透光材質所形成的基板。該圖案的形成方法則例如是在 基板210上形成不透光層、半透光層或是藉由蝕刻基板21〇 以形成。於本實施例中，此圖案至少包括圖形區220以及 圖形區230。其中圖形區220例如是主電路圖形層，圖形 區230例如是周邊圖形層，並且圖形區22〇與圖形區230 係分別屬於不同的層次並分別寫入於基板210上而形成 的0 圖3為位於圖2之光罩200上的其中一個對準標記組 •I254401twf_d〇c/g 240的放大示意圖。如圖2與圖3所示，對準標記組24〇 至少包括對準標記242與對準標記244。其中，對準標記 242與圖形區230係經由同一層次的圖案寫入而形成，因 此，對準標記242係用於對圖形區230進行量測位準，易 言之，對準標記242的偏移(Deviation)可換算為圖形區23〇 ， 的偏移。在一較佳實施例中，對準標記242例如為矩形。 • 請繼續參照圖3，對準標記244與對準標記242間隔 _ 一固定距離的環繞對準標記242而設置在基板21〇上，^ 中對準標記242例如是與對準標記244在方向x的距離為 ，離Xl與距離X2，且距離X产距離& ;對準標記242例如 是與對準標記244在方向y的距離為距離yi與距離乃，且 距離y产距離乃。並且，對準標記244與圖形區22〇係經 由同一層次的圖案寫入而形成，因此，對準標記244係用 於對圖形區220進行量測位準，易言之，對準標記244的 偏f可換算為圖形區220的偏移。在一較佳實施例中，對 _ 準標記244例如為框形並環繞矩形的對準標記242而設置。 並且在一較佳實施例中，光罩2〇〇的圖形區22〇、圖 形區230、對準標記242以及對準標記244均位於基板2ι〇 之同一平面上。 此處值得注意的是，除了以往之各層次個別的對準量 測之外，由於本發明將用於量測不同層次的對準標記242 =對準標記244設計為-個對準標記組，並且將對準 己組240中的對準標記242與對準標記244設計為具有 特定的位置對應關係，因此，藉由對準標記244與對準標 9 I2544Q6|2itwfd〇c/g 記244的相對位置是否產生偏移，就能夠得知光罩2〇〇上 之不同層次間的圖案是否產生偏移。 雖然在上述較佳實施例中，對準標記242設計為矩 升/，且對準彳示δ己244设計為框形，然而本發明並不限定於 此，只要是能夠符合對準標記244與對準標記242間隔一 固定距離的環繞對準標記242而設置的條件，對準標記242 與對準標記244可為任意的形狀。Sit includes the substrate, the pattern, and the majority of the two standard labels:: quantity:: method 2 is formed; on the substrate, the pattern is formed by the first one;:::, each of the alignment mark groups is made by the first „对_^ Figure 1 constructed ί "" with the standard mark interval - fixed distance around the first pair of Zhuoji used for the brother-one graphics layer to measure the level. The first alignment mark on the square mask 仏5 has been brother-to The relative position of the second graphic layer and the second de-marking mark are used to determine whether the relative position of the first graphic layer and the second graphic layer are biased = this: _ the interlayer of the photomask described in the preferred embodiment is opposite to the second, and the younger brother A pattern layer, a second pattern layer, a first alignment layer, and a second alignment mark are located on the same plane of the substrate. The interlayer alignment of the 丨 仏 仏 quantity is, for example, a frame shape. The second alignment mark is a summer measurement method of the layer of the photomask according to the preferred embodiment of the present invention, wherein the first alignment mark on the photomask is detected and the second ^ 1 1254401 16621twf. The doc/g shows that the instrument is, for example, an interferometer. As can be seen from the above, since the present invention will be used to measure different levels of alignment mark design The first alignment mark and the second alignment mark are designed to have a specific position correspondence relationship, and therefore, the first alignment mark on the photomask is measured by the measurement. Whether the relative (4) of the two alignment marks is offset, and (4) whether the pattern of the different layers on the mask is changed, and it is confirmed that the created pattern can conform to the designed specifications. The above and other objects, features, and advantages will be more apparent and understood. The preferred embodiments of the invention are described in the accompanying drawings. A schematic view of a reticle of a preferred embodiment. Referring to FIG. 2, the reticle 200 includes at least a substrate 21, a pattern disposed on the substrate 210, and a plurality of alignment mark groups 24, wherein the substrate 210 is, for example, A glass substrate, a plastic substrate or a substrate formed of other suitable permeable materials. The pattern is formed by, for example, forming an opaque layer, a semi-transmissive layer on the substrate 210, or by etching the substrate 21〇. To form In this embodiment, the pattern includes at least a graphics area 220 and a graphics area 230. The graphics area 220 is, for example, a main circuit graphics layer, the graphics area 230 is, for example, a peripheral graphics layer, and the graphics area 22 and the graphics area 230 are respectively 0 which is formed by different levels and written on the substrate 210, respectively. FIG. 3 is an enlarged schematic view of one of the alignment mark groups I254401twf_d〇c/g 240 located on the reticle 200 of FIG. 2. FIG. As shown in Fig. 3, the alignment mark group 24A includes at least an alignment mark 242 and an alignment mark 244. The alignment mark 242 and the pattern area 230 are formed by pattern writing of the same level, and therefore, the alignment mark 242 is It is used to measure the level of the graphic area 230. In other words, the offset of the alignment mark 242 can be converted into the offset of the graphic area 23〇. In a preferred embodiment, the alignment mark 242 is, for example, rectangular. • Referring to FIG. 3, the alignment mark 244 is disposed on the substrate 21A with the alignment mark 242 spaced apart from the alignment mark 242 by a fixed distance, and the alignment mark 242 is, for example, in the direction with the alignment mark 244. The distance x is from X1 and the distance X2, and the distance X is the distance & the alignment mark 242 is, for example, the distance from the alignment mark 244 in the direction y is the distance yi and the distance, and the distance y is the distance. Moreover, the alignment mark 244 and the pattern area 22 are formed by the same level of pattern writing. Therefore, the alignment mark 244 is used to measure the pattern area 220, in other words, the alignment mark 244 The offset f can be converted to the offset of the graphics area 220. In a preferred embodiment, the alignment mark 244 is, for example, frame-shaped and surrounds the rectangular alignment mark 242. And in a preferred embodiment, the pattern area 22 of the mask 2, the pattern area 230, the alignment marks 242, and the alignment marks 244 are all located on the same plane of the substrate 2ι. It is worth noting here that, in addition to the individual alignment measurements of the various layers in the past, the present invention will be used to measure different levels of alignment marks 242 = alignment marks 244 as an alignment mark set, And the alignment mark 242 and the alignment mark 244 in the alignment group 240 are designed to have a specific position correspondence relationship, and therefore, by the alignment mark 244 and the alignment mark 9 I2544Q6|2itwfd〇c/g Whether or not the relative position is shifted, it is possible to know whether or not the pattern between the different layers on the mask 2 is offset. Although in the preferred embodiment described above, the alignment mark 242 is designed to be a rectangular rise/and the alignment is shown to be a frame shape, the present invention is not limited thereto as long as it can conform to the alignment mark 244. The alignment mark 242 and the alignment mark 244 may have any shape, provided that the alignment mark 242 is spaced apart by a fixed distance from the alignment mark 242.
、以下說明本發明之料解標記_光罩的層間對 準度的量測方法。首先，提供如® 2所示之具有對準標記 組240的光罩200，接著，對該光罩2〇〇之對準標^組 24〇(對準標記如、對準標記244)進行檢測，並由對準桿 記244與對準標記242的姆位置是否產生偏移來判斷該 圖形區220與該圖形區23〇的相對位置是否偏移。於一較 t ^ ^^ft(Interfer〇^ ，100之對準標記組240(對準標記242、對準標記進 測以得到距離Xl、距離Χ2、距離力與距 =斷距離Χι與距離X2是否相等以及距離yi與距離乃是 =能夠得知對準標記244與對準如如_ q疋否產生偏移，亚進一步得知光罩200上之夂層次 =圖案是否產生偏移。例如計算距離&減距離/的1， 在方^值^二，即可得知對準標記244與對準標記242 立置偏移程度，從而得知圖形區22〇與 在方向Χ的相對位置偏移程度，同樣的可夢由 上述相同的方法檢測出圖形區⑽與圓形區2 二 10 !2544Q1 ltwf.doc/g 的相對位置偏移程度進而確認光罩是否符合設 雖然在上述較佳實施例中，是使用干涉儀對群· 之對準標記組進行制，―本發明並不限定於 ^隹1妓能夠檢測出對準標記組謂中之對準標記242'、 準^己244是否產生偏移的儀器，就可以應用於本發 、月/尚且，雖然本發明是對光罩200上之對準標記組2Next, a method of measuring the interlayer alignment of the material unmarking_photomask of the present invention will be described. First, a reticle 200 having an alignment mark set 240 as shown in FIG. 2 is provided, and then the alignment group 24 〇 (alignment mark such as the alignment mark 244) of the reticle 2 is detected. And whether the relative position of the graphic area 220 and the graphic area 23A is offset by whether the alignment position of the alignment bar 244 and the alignment mark 242 is offset. In a t ^ ^ ^ ft (Interfer 〇 ^, 100 alignment mark group 240 (alignment mark 242, alignment mark to measure distance Xl, distance Χ 2, distance force and distance = break distance Χι and distance X2) Whether it is equal and the distance yi and the distance is = can know whether the alignment mark 244 and the alignment are offset as _q疋, and further know whether the 夂 level on the reticle 200 = the pattern is offset. For example, calculation The distance & minus distance / 1, at the square value ^ two, can be known that the alignment mark 244 and the alignment mark 242 are offset to the extent that the relative relationship between the graphic area 22 and the direction Χ is known. The degree of shift, the same dream can be detected by the same method as described above, the relative positional deviation of the pattern area (10) and the circular area 2 2 10! 2544Q1 ltwf.doc / g to confirm whether the mask conforms to the design, although in the above preferred implementation In the example, the alignment mark group of the group is manufactured using an interferometer, and the present invention is not limited to the detection of the alignment mark 242' in the alignment mark group, and whether the alignment mark 244 is The instrument that produces the offset can be applied to the hair, the month, and the present, although the present invention is Group 2 of the alignment mark on the cover 200
檢測’然而本發明亦可以對技罩轉移至晶圓上之對 準払β己組的圖案進行檢測。 =上述’由於本發縣祕量财同層次的對準標 準個對準標記組24G ’並且將對準標記組中的對 己242與對準標記244設計為具有特 =卜藉由量測出光罩上之對準標記 的相對位置是否產生偏移，就能夠得知光罩2〇〇 作的圖案是否產生偏移，從而能夠確認所製 下之圖木忐夠符合所設計的規格。Detection 'However, the present invention can also detect the pattern of the alignment of the mask onto the wafer. = The above is due to the alignment of the standard aligning mark group 24G' of the secret level of the prefecture and the pair of 242 and the alignment mark 244 in the alignment mark group are designed to have a specific light. Whether or not the relative position of the alignment mark on the cover is shifted, it is possible to know whether or not the pattern of the mask 2 is shifted, and it is possible to confirm that the prepared pattern is in conformity with the designed specifications.
與對t實施例中對準標記組24G具有對準標記242 =244，但若—光罩中具有大於二個的不同層次 C立Γ —對準標記組亦可延伸具有_以上之對準β ;立置;Ξ;標記互相間具有一固定一 標記，否產生偏移，其相互間—個對準標記環繞另—對準 ，然本發明已以較佳實施例揭露如上，然其並 鬥發明，任何熟習技藝者，在不脫離本發明之精神 已圍内，當可作些許之更動與潤飾，因此本發明之保護 1254401 16621twf.doc/g 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為習知一種光罩的示意圖。 圖2為本發明之一實施例的一種光罩示意圖' 圖3為圖2之對準標記組240的示意圖。 【主要元件符號說明】 100、200 ··光罩 110、210 :基板 _ 120 :主電路圖形層區 130 :周邊圖形層區 140、150、242、244 :對準標記 220、230 :圖形區 240 :對準標記組 X、y:方向 χι、X2、yi、y2:距離 ❿ 12The alignment mark group 24G has an alignment mark 242 = 244 in the embodiment of t, but if there are more than two different levels in the mask, the alignment mark group may also have an alignment of _ above β. Stand up; Ξ; the marks have a fixed mark between them, whether there is an offset, which is aligned with each other - an alignment mark, but the present invention has been disclosed in the preferred embodiment as above, but The invention is not limited to the spirit of the invention, and may be modified and retouched. Therefore, the scope of the protection of the invention is defined by the scope of the appended patent application. Prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a conventional photomask. 2 is a schematic view of a photomask according to an embodiment of the present invention. FIG. 3 is a schematic diagram of the alignment mark set 240 of FIG. [Description of main component symbols] 100, 200 · Photomask 110, 210: Substrate_120: Main circuit pattern layer area 130: Peripheral pattern layer areas 140, 150, 242, 244: alignment marks 220, 230: graphic area 240 : alignment mark group X, y: direction χι, X2, yi, y2: distance ❿ 12