TWI254269B - Active display driving circuit - Google Patents

Abstract

An active display driving circuit is disclosed in the present invention. Each pixel drive circuit contains a light-emitting element, a connection transistor connected to the light-emitting element, a driving transistor, a storage capacitor, and two switching transistors connecting an end of the storage capacitor to two voltage levels to reach the effects of capacitor coupling and changing gate voltage of the driving transistor. The circuit can be used as pixel current-driving type circuit for poly-silicon electro-luminance device featuring variation of device characteristics for improving image flaws caused by non-uniformity of threshold voltage of thin-film transistor and IR drop as well as eliminating the drawback of long period of time for charging and discharging at low current input.

Description

1254269 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field The present invention relates to a pixel driving circuit for an electroluminescent element (E1 ectr luminescence device; EL device) display, and more particularly to an active type Polycrystalline germanium thin film transistor electroluminescent device (EL device) has image defect caused by uneven thickness voltage (vth) of film transistor and IR drop, and charge and discharge time is too long at low current input The driving circuit of the problem. [Prior Art] Electro-Luminescence Device (EL device) display can be divided into passive (Passive)

Matrix, PM-EL Display) and Active (AM-EL Display). The so-called active display EL Display (AM-EL Display) ’ is to use a thin film transistor (TFT) with a capacitor to store signals, thereby controlling the brightness gray scale performance of the EL display. Although the production cost and technical threshold of the passive EL Display are low, it is subject to the driving method, and the resolution cannot be improved. Therefore, the application size is limited to about 5 inches, and the product will be limited to the low-resolution small-size market. In order to obtain high-definition and large-faced surfaces, active driving is required. The so-called active driving is to store signals by capacitors, so the pixels can still maintain the original brightness when the scanning lines are swept; as for passive driving, Only the pixels selected by the scan line will be illuminated. Therefore, in the active drive mode, the EL Device does not need to be driven to very high brightness, so it can achieve better life performance and achieve high resolution. EL Device junction

1254269 V. Invention Description (2) The technology of TFT can realize active driving EL Display, which can meet the fluency of the screen display in the current display market, and the resolution is getting more and more south. 'Full display of EL Di splay above superiority Characteristics. The technique of growing TFT on a glass substrate can be an amorphous silicon (a Si) process and a low temperature polycrystalline silicon (LTPS) process, LTPS TFT and a-Si TFT. The biggest difference lies in the difference between its electrical and process complexity. The LTPS TFT has a higher carrier mobility, and the higher carrier mobility means that the TFT can provide a more sufficient current. However, the process is more complicated; while the a-Si TFT is the opposite, although the a-Si is loaded. The sub-mobility rate is not as good as ltps, but because of its simple and mature process, it has a good competitive advantage in terms of cost. If so, due to the limitation of the process capability of low temperature polysilicon (LTPS), the critical voltage of the fabricated thin film transistor (TFT) device (

Threshold Voltage, Vth) and electron mobility (Mobility) can cause variations, so the characteristics of each TFT component will be different. When the drive system uses the analog voltage modulation method to represent the gray scale, the characteristics of τρτ of different pixels are different, so even if the same data (Data) voltage signal is input, the TFTs of different pixels will generate different output currents. , causing the display; the electroluminescent elements (EL devices) of different pixels on the panel emit different brightness. This phenomenon will cause the organic light-emitting diode panel to display a gray-scale image that seriously destroys the uniformity of the panel image (image UnifQFmity^. So the most urgent problem to be solved at this stage of AM-EL Display is how to reduce the low-temperature polysilicon film. The adverse effects of uneven transistor characteristics. Because of these adverse effects, the image displayed from the panel will be immediately =

1254269 V. Description of invention (3) It can be detected, so it is difficult to carry out the next development and application without solving this problem. Therefore, in order to solve the above disadvantages, U.S. Patent No. 6,373,454 "Active Matrix Electroluminescent Display Devices" (Apr. 26, 2002), US Patent No. 6,229, 506 "Active Matrix Light emitting diode pixel structure and concomitant method" ( May 26, 2001) and Toshiba's paper "A Novel Current Programmed Pixel for Active Matrix OLED Displays" (Society for Information Display 2003 (SID 20 03)). · In the above patents and papers, the input current of the data line and the output current used for the final output to the electroluminescent element are one to one (1 ·· 1 ), so capacitance and parasitic capacitance are caused at low current input. The shortcomings of charging and discharging time are too long. Further, U.S. Patent No. 6,359,605, "Active Matrix Electroluminescent Display Devices" (Mar. 26, 2002), U.S. Patent No. 6,501,466, "Active Matrix Type display apparatus and drive circuit thereof" (Dec. 26, 2002) And US Patent 6,535,185 "Active driving circuit for display panel" (Mar. 26, 2003). In the above patent, it is characterized in that the ratio of the input current to the output current is n to 1 (n··1) by the principle of the current mirror (c u r r e n t m i r r〇r ). However, the characteristics of the two TFTs in the current mirror circuit must match ( ... matched ), otherwise the relationship between the input current and the output current will be affected by the TFT,

Page 7 1254269 V. Description of the invention (4) The variation of the threshold voltage (Vth) of the component and the variation of the electron mobility (Mobi 1 ty ), so the requirements for the TFT process are high. In combination with the above circuit, the common disadvantage is that to achieve full dark pixel brightness, it is necessary to discharge the storage capacitor voltage to the gate of the driving transistor, and the source voltage (Vgs) is smaller than the threshold voltage (vth) of the driving transistor. The drive transistor does not generate current. However, this discharge time is too long, causing the gate of the driving transistor and the source voltage (V gs ) to be larger than the threshold voltage (V th ) of the driving transistor after the writing time elapses, so that a small current is generated to give the electroluminescent element light. , making the display panel contrast worse.

Also, the paper "a New Current Programmable Pixel Structure for large-Size and High-Resolution AMOLEDs" published by Samsung Corporation (International Display Workshops 20 02 (I DW 20 0 2 )). In this paper, it is proposed to use two capacitors to change the gate voltage (Vg) of the TFT for driving by the principle of capacitive coupling.

'To achieve the relationship between the input current and the output current is "output current two Ax input current + Β" (where A and Β are constant). However, due to the influence of the process or layout, the capacitance values of the two capacitors are changed, which causes the capacitance coupling voltage value to mutate, which affects the output current of the driving transistor. Therefore, the driving method described in this paper has disadvantages in terms of accuracy of capacitance value, capacitance process and layout. And the two-capacitor drive requires two capacitors, which will make the aperture ratio of the halogen smaller. SUMMARY OF THE INVENTION The present invention is directed to solving the above-mentioned disadvantages and avoiding the disadvantages. The present invention can improve the critical voltage of the thin film transistor.

1254269

(^1^) The problem of unevenness in characteristics and the resistance drop of the wire resistance (IR dr〇p) and the problem of excessive charging and discharging time at the time of low current input. Each of the scanning lines on the display panel of the present invention includes a second line of the parent fork to form a pixel, wherein the driving electrogram in the pixel scans the first scanning transistor and the second scanning battery The crystal, the second scan: the gate (G) is connected to the scan line, and the source (s) is connected to the data-driven i-drive transistor, and the source (S) of the drive transistor is connected to the voltage source.

The first electric switch transistor 'the source (S) of the first switch transistor is connected to the voltage source, and the gate (G) terminal is simultaneously with the other one and the above 2 22 (;) Then connected to the scan line; - the second switch "body...: the source of the crystal (8) is connected - the first is connected to the light control line. : storage capacitor 'the storage capacitor has two ends, one, the second switch transistor The pole (the connection of the first scanning transistor, the end of the force is simultaneously with the upper side) - the light-emitting element, the Γί/-the gate of the driving transistor (6) is connected to the drain (D) of the connecting body, and the 7"% is the anode, Connected to the above-mentioned electrified crystal, the transistor is all 丄=== the cathode is grounded, wherein, the same as the above-mentioned driving power -= access, and the second voltage ^1 ^ f - the voltage source can also be controlled by the illuminating control line voltage, the original Can be accessed by the scan line. Or, only the first

1254269 V. Description of the invention (6) ^ The source can be changed by the voltage source. Alternatively, the first voltage source can be re-enabled and the second voltage source can be accessed by a scan line. The source further drive circuit embodiment is an electro-optical semiconductor (10) OS) transistor. The driving circuit comprises a metal oxygen second scanning electron crystal, wherein the source (S) of the binary electrodynamic transistor is grounded; and a source (S) connected to the Thunder_β/body drive and the driving device The hs body 's hai connection transistor ^ ^ generation η B's drain (D) and the first scan transistor's drain (D) are connected, the gate ((9) is connected with the illuminating control line. 2 - Switching The crystal 'the source of the first switching transistor; the source 'question pole (6) is connected to the scan line; the second switch is electrically!:::! The source of the transistor (8) is connected to the second voltage source, Closed pole (6) Only J is connected to the light-emitting control line. 1. The storage capacitor, (4) the storage capacitor has (4), the - terminal is simultaneously connected with the drain (D) of the second off-cell transistor, and the other end is simultaneously with the above; =ϊ ΐ The body of the body (D) and the gate of the driving transistor ((8) are connected, the other = 70 pieces, the light-emitting element is an anode at one end, connected to the voltage source - the cathode is the cathode, the cathode is connected with the above The transistor is connected to the pole (D)

The first voltage source can also be accessed by the illumination control line scan line. Or, only the first voltage source is changed to ground, and the second power is the same as the above-mentioned driving circuit, and the second voltage source can be changed from the voltage source to the ground. Alternatively, the first source of pressure can be accessed by a scan line. [Embodiment]

1254269

BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be described as follows: Detailed Description and Technical Description ‘The present embodiment is the same as the first embodiment: The first embodiment is the same as the quotation of the quotation of the η circuit shown in Fig. 1 . As shown in the figure: A - line 1 〇 and each piece of information (4) This is a display of the parent-strip on the panel. The drive circuit consists of a cross-structured pixel drive circuit, where the two sweeps are connected to the mine. Xingyifu, a gate transistor T2^, a gate (G) and a scan line (Scan line, source (S) are connected to a data line 20. Data transistor τι and a VDD V ^ V\Z' " ^ ^ .L ^ The connection of the solar system T4, the source (S) of the connected transistor T4, the electromagnet Τ3 and the second scanning transistor Τ2 & pole (8) The gate (G) is connected to an emission control line (Emission line) 30. The first switching transistor T5, the source (s) of the first switching transistor T5 is connected to a first voltage source VI, and the gate (G) ) is connected to the scan line 1〇. A second off transistor T6, the source (s) of the second switch transistor T6 is connected to a second source V2, and the gate (G) is connected to the illumination control line. The first scanning transistor τι, the second scanning transistor, the driving transistor T3, the connection transistor Τ4, the first switching transistor 15, and the second switching transistor Τ6 ρ is an oxidized semiconductor (PM0S) transistor. A storage capacitor Cs 'The storage capacitor Cs has two ends, one end of which is simultaneously connected to the drains (D) of the first and second switching transistors T 5 and T 6 , Further, one end is simultaneously connected to the first scanning transistor τ1 (D) and the driving transistor 5 to 1254269. The invention (8) gate: (G) is connected to the light-emitting element 40. One end is an anode, the above connecting transistor is connected with a drain (3)), and the second cathode is grounded. The light-emitting element 40 is an electroluminescence; an electrode 'Llectro-Luminescence Device; EL device. Electron 曰 = bit line scan line 1G of the pixel drive circuit, the first (G) end of the first scan, the second scan transistor T2 is the source of the glaze scan, the transistor T1, the second scan transistor The pole CS) is connected to the data line 2 〇. 30 ^ Ϊ Ϊ Ϊ 四 四 四 四 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 The voltage at the gate (G) is determined by the voltage at the gate (G) terminal. The gate (G) terminal of the switching transistor T5 is controlled by the eleventh scanning line 1〇^30, the gate of the switching transistor T6 (G). The end is controlled by the nth illumination control circuit as follows: j, t system performs the scanning action to the needle scan line 1〇, the potential of the nth sweep is low (Vs l) ”, so the first The scanning transistor τ ^, the scanning transistor T2, and the first switching transistor T5 are in a conducting (10) state. The potential of the 3rd light-emitting control line 3〇 is, high potential (% η)", therefore, the crystal T4 and the second switching transistor T6 are off (〇FF), so there is no such a =2 The current passes through the light-emitting element 4〇 to prevent erroneous action when the data current is written into the storage capacitor Cs. When the storage capacitor Cs is connected to the gate (G) terminal of the driving transistor τ3 and connected to the data line 2〇 through the % trace transistor, the other end is transmitted through the first switch.

1254269

The transistor T5 is connected to the first voltage source V1 which is charged by the data line through the first storage capacitor CS (Vg3). At the same time, the scanning transistor T1 and the discharge operation are performed. At this time, the voltage of the driving source VI is reduced by the stored data current (IData, the switching transistor T5, the gate capacitance Cs of the moving transistor T3 (VI - so pass at this time) The driving voltage of the driving transistor T3 is r / 1 / Π \ ^ ; IL ^ ^Drive ^ ^=(1/2) X /3 X (Vsg3 - Vth3)2, (its t is the conductance coefficient of the driving transistor n (Transconductance parameter), in which the source of the driving transistor T3, the gate voltage Vsg3 = VDD - L = vdd - (νι - L )) At this time, the bedding current (Il) ata is equal to the current passing through the storage capacitor Cs (Ics ) plus the drive current () of the drive transistor T3, ie • Data = iCS + IDrive. 2. When the voltage of the storage capacitor Cs is L, the drive current (lDrive) through the drive transistor T3 is equal to the data line 2 The data current on the raft,

(l/2) x 々 x (Vsg3 - Vth3)2 , where Vsg3 = VDD — V L Data : VDD -(Vl -ycs)

At this time, the bedding write operation is completed. Therefore, the voltage of the Cs storage capacitor is L = (2 X ^ata / β ) 〇 / 2) _ (VDD - VI - V ). T th3 7 ′ j, finally, when the potential of the nth scanning line i 由 is changed from “low potential (Vs l ) to south potential (vS H)”, the first scanning transistor T1 and the second scanning power The crystal T2 and the first switching transistor T5 are in a "off (〇FF)" state. At this time, the potential of the nth light-emitting control line 30 is changed from "high potential (Veh)" to "low potential (Vel)", so ' The connecting transistor T4 and the second switching transistor T6 are in a conducting (ON) state

1254269 V. INSTRUCTIONS (10) ' — --—1 At this time, the storage capacitor Cs is connected to the gate (G) end of the driving transistor T3, and the other end is connected to the second voltage source V2 through the second switching transistor T6. . Therefore, the gate voltage (vgs) of the driving transistor T3 is the voltage of the second voltage source V2 minus the storage capacitor Cs (V2 - Ves). Then, the driving current through the driving transistor T3 is Ii)rive = (1/2) χ cold χ (Vsg3^h3) 2, where V(4) = VDD - Vg3 = VDD - (V2 - Vcs). At this time, the driving current (〖Drive) flows through the light-emitting element 40 through the connection transistor T4, and the light-emitting element 40 emits light. / In summary, the relationship between the data current () and the drive current () is IDrive = (l/2)x /5x [(2x IData/million)(1/2) + νι_V2]2. According to the driving principle and the mathematical formula described above, it is known that the magnitude of the output muscle of the light-emitting element 4 is independent of the threshold voltage value () of the driving transistor τ3 itself, and is only related to the size of the written data current (iData), so Compensating for variations in the threshold voltage caused by process factors in thin film transistors (TFTs). Further, due to the voltage difference between the first voltage source V1 and the second voltage source v 2 , the gate (G) terminal voltage (vg3) of the driving transistor T3 is offset. Therefore, if the voltage of the second voltage source V2 is greater than the voltage of the first voltage source vi, a small data current (Id-) can be input to reduce the current to the storage capacitor Cs at a low driving current (iDrive) of the low gray level. The charging time of the parasitic capacitor can solve the problem of too long charging and discharging time. SECOND EMBODIMENT: The eye is shown in Fig. 2, which is a schematic diagram of the circuit in the second embodiment of the present invention. As shown in the figure, the present invention is a pixel driving circuit formed by crossing each scanning line 10 on the display panel and each of the data lines 20, wherein

Page 14 1254269 V. Description of the Invention (11) The driving circuit is substantially the same as the first driving circuit of the second switching core D. The difference is changed by the light-emitting control line 30: the source (8) is original. Connected to the first voltage source Vi to connect a second voltage source V2 to V. The first switching transistor 6 source (S) is originally connected by the scan line 10. The first one is real? The principle of wide operation is as follows: For the line 10, ^niMf the second scanning transistor has 2 and the first Y', so the first ~ tracing transistor T1, at this time the nth illuminating control line 3f) / turn off the crystal crystallization (0N) status. Connect the transistor T4 and the Λ; 7 bits are "high potential" " 'so' the current passes through the illuminating element 40 to avoid the wrong action when the data current % enters the storage capacitor Cs. (4) Write the storage capacitor CS _LA at this time _ connected to the gate (G) end of the driving transistor 13 through the scanning electrode body and connected to the data line 20 by the electric m body, and the other end is connected to the nth light emitting control line 3 through the first switch 曰曰〇 At the same time, part of the data current is 2; 乂 一 一 一 一 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 It is equal to the high potential of the light-emitting control line 3〇, and the valley Cs voltage (VpH-Vrc). ' So at this time, the driving current (丨^) through the driving transistor T3 is 丨^ = x point x (Vsg3 - Vth3) 2, (where /5 is the conductance of the driving transistor T3 {, the source gate of the driving transistor T3 Pole voltage = VDD _, 3 = VDD

CsE’H ). Therefore, the data current (kta) is equal to the current through the storage capacitor s (Ics) plus the drive current through the drive transistor T3 x Drive ^

1254269 V. Inventive Note (12), that is, Lata 2. When the voltage of the storage capacitor Cs is vcs, the driving current (I) of the thief ^T3 is still recognized, and the circuit is passed through the spoofing transistor (Drive). Special table - the data line on the 2 line of the shell material line LV 11

Drive I Da ta

Drive

Vg3 = VDD-(VE (1 / 2 ) x /3 x ( ν· a t rcs sg3

V th3

, where V sg3

lData ^ VDD '(2Bt l! ^ !(t;D ^ ^ ^ t cs

V 3 Finally, when the potential of the nth scanning line 1 由 is , , low ray v λ is , high potential ( ν ςΗ ) ” , 笛 卢 & 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨 雨^ ^ M ta ^T5 ^ I " f ^ ^ 'Connecting transistor T4 and second switching transistor T6 are conducting (10) E) L state = storage capacitor Cs - terminal connection driving transistor transistor T6 connected to scan line " The gate voltage (Vg3) of the upper body is equal to the voltage of the storage capacitor Cs (Vs h - Vcs). - potential d) electricity (v ^ s: th3 where Vsg3 - VDD - Vg3 = VDD —(vs H —vcs) At this time, the β current (lDrive) flows through the light-emitting element 40 through the connection transistor T4, so that the light-emitting element 40 emits light. In combination, the data current Uata) and the drive current (i_e) are obtained. Off ', ·.,, Drive =(1/2) x ^ χ 〔(2 X IData / /3 )(w) +νΕ Η — Vs Η〕2. The output principle and mathematical formula are used to know the output. Light-emitting element 4〇

V. Description of invention (13) "I size f drive transistor T3 itself's threshold voltage value ((4) independent, S曰/ 贝 shell current (L) size, so it can compensate for the film BB body ^? 1!) The variation of the threshold voltage caused by the process factor. This = due to the voltage difference between the high potential (Vs η) of the scanning line 10 and the position (VE, H) of the light-emitting control line 3, causing the gate of the driving transistor T3 (6) Terminal power = offset (offset), so if the scan line is 1 高 high potential (Vs "greater than the south potential of the first control line 30 (ve h)" in the low gray level of the small drive current (; Γς ' can Entering a large data current (iData) to reduce the current charging time for storing f: valley Cs and parasitic capacitance can solve the problem of overcharging at the same time. Third embodiment: Thunder please ί ^ "3rd picture" According to the third embodiment of the present invention, there is less η in the pixel. As shown in the figure, the present invention is a pixel driving circuit formed by a crossover of each of the scanning strips: ' and a parent data line 2 , on the display panel. Wherein, the dynamic circuit is substantially the same as the driving circuit of the first embodiment, and the difference is that the first switching transistor The source (S) of 5 is connected to the first voltage source VI, and the source VDD is connected; the source of the second switching transistor 6 is connected to the second voltage source V2 as in the first embodiment. The principle of the circuit operation of the embodiment is as follows:

When the Jn and # systems perform the scanning operation until the first "scanning line 1", the ηth sweeps the first L!! potential & 15 potential (Vs, l", so the first-scanning transistor τι, this ^ 1 electricity / The body T2 and the first switching transistor T5 are in a conducting (〇N) state.

^ ^ ^ ^ ^ f ^(Ve'h)" ' ® J Sun and the first switch transistor T6 are off (off), so here 1254269 V, invention description (14) Γ11 ί will not have current The light-emitting element 40' prevents an erroneous action when the data current is written into the storage capacitor Cs. When the storage capacitor Cs is connected to the gate (g) end of the driving transistor T3 and the electric m! body is connected to the data line 2〇, the other end is transmitted through the first-switch material: through the first; , =. The same: part of the data current by the ☆ 柄 handle electric aB body 11, the first switch transistor T5 on the storage of electricity wide two two discharge action, at this time drive the transistor T3 gate voltage (83; voltage source VDD voltage minus Storage capacitor Cs voltage (VDD - Vcs). ... 2 This two-way two-electrode number drives the Thunder (where 々 is the conductance system of the driving transistor T3 (VDD is the original electric magic Vsg3 = VDD-V- = VDD - The output of the electric (T) force L (I) is equal to the electricity passing through the storage capacitor Cs: "ics force: the drive current through the drive transistor η (U, ie lData ics + IDrive 〇 2, when stored When the voltage of the capacitor Cs is vcs, the drive current uDrive) of (4) is equal to the motor power, =Ι〇Ηνβ = (1/2) X β χ (V — ν , 2 7 ^ ^ ^ IData VDD - (VDD - Vcs) Post th3,, such as = VDD — Vg3 ^cs At this point, the data writes the action to complete 1 this = (2x L / good 1/2) - (vdd ~ vdd - v )., the voltage is Vc 3, the last 'when When the nth scanning line 7 is "high potential (Vs, „)”, the second is, electric fd) turns to T2 ^ ^ F.1 ^ f .3⁄4 ^T5 μ :;f, , ,; ^ ^ ^ The potential of the light control line 30 is in a "high power" state. η article Shibata return potential (vEH) "to" low potential (U Shu Shu, pp. 181,254,269

Therefore, when the connection transistor T4 and the second switching transistor T6 are in the on state (〇N) state 1, the storage capacitor Cs is connected to the gate (G) end of the driving transistor T3, and the other end is connected to the second switching transistor T6. The second voltage source V2. Therefore, the gate voltage (Vg: 3) of the driving transistor T3 is the voltage of the second voltage source V2 minus the storage capacitor Cs voltage (V2 - Vcs). Then, the driving current through the driving transistor T3 is = (1/2) x χ (ν_ : Vth3) 2, where Vsg3 = VDD - Vg3 = VDd - (V2 - Vcs). At this time, the driving current (IDrive) flows through the light-emitting element 4 through the connection transistor 74, and the light-emitting element 40 emits light. Lu combines the above, and the relationship between the data current (Lata) and the drive current (Drive) is Live = (l/2)x [(2x lData / Lu) (1/2) + VDD - V2] 2. According to the driving principle and the mathematical formula described above, it is known that the magnitude of the current output to the light-emitting element 4 is independent of the threshold voltage value (vth) of the driving transistor T 3 itself, and is only related to the size of the written data current (lData). It can compensate for the variation of the threshold voltage caused by the process factors of the thin film transistor (TFT). Further, due to the voltage difference between the voltage source VDD and the second voltage source V2, the voltage at the gate (G) terminal of the driving transistor T3 is offset (〇f f set). Therefore, if the voltage of the second voltage source V2 is greater than the voltage of the voltage source Vj)D, a large data current (lData) can be input to reduce the current to the storage capacitor Cs when the low-short drive current (iDrive) is low. The charging time of the parasitic capacitor can solve the problem of too long charging and discharging time. Fourth Embodiment: Please refer to FIG. 4, which is a fourth embodiment of the present invention.

Page 19 1254269 V. Description of invention (16), schematic diagram of the road. As shown in the figure, the present invention is a pixel drive formed by intersecting each of the data lines 2, and the drive circuit of the first embodiment is only the source (S) of the first switch transistor T5. Different hair = 2: voltage source m is connected; the second switching transistor: = 7:30 is connected by scan line 10. The original pole (S) is also described in the fourth embodiment. The circuit operation principle is as follows: Trace line; 0's ^ system ^ When the scan operation is performed to the nth scan line 10, the nth sweep t line 10 has a low potential 4 (Vsl)", therefore, the first scanning electric crystal amount, ΐ; Γ: the electric body T2 and the first switching transistor T5 are in a conducting (10) state. The potential of the connection body Λ4 Λ line 30 is "high potential (Ve, h)", therefore, the stage: the failure: the switching transistor T6 is off (0FF), so here, there is a motor through the illuminating element 40, to avoid the wrong action when the data current (Data) is written into the storage capacitor Cs. 4 73⁄4 ^ f storage capacitor ^ One end is connected to the gate (6) end of the drive transistor T3 and the transistor 71 is connected to the data line 2〇, and the other end is connected to the Thunder through the first switch, and the 7 § is connected to the Thunder, 7§ Vnn m -t data ΐ Ϊ At the same time, part of the data current (l) is stored by the second-line through the first-shaped transistor 71, the first switching transistor T5, and the charging and discharging action is performed. At this time, the transistor 驱动3 is driven. The gate voltage 83 is at the voltage source VDD voltage minus the storage capacitor Cs voltage (VDD - Vcs). [Drive = (1/2)X /5x (Vs, so at this time, by driving the driving power of the transistor T3 & (u is (where cold is the driving transistor τ 3

VDD - V ^ l II ο , \ | yu, the conduction coefficient, the source gate voltage of the driving transistor T3 ▼ a y -vdd-(VDD-vcs)). Therefore, the data current is equal to

1254269 V. Description of Invention (17) The current of the storage capacitor Cs (IDrive), that is, IData = L + ... τ, the voltage of the two H storage capacitors Cs is Vcs, so that the transistor τ is driven. τ . ~ L (lDrive) is equal to the data current on the data line 20 ("_), i plus the drive power through the drive transistor T3 lDrive

I

Data 1 Dr i ve VDD -(VDD x /3 x (v V,

^CS sg3

V th3 where Vs g3 VDD - V, g3 The data write operation is completed. Therefore, the voltage of the Cs storage capacitor is vcs (X Lata / /5) (1/2) ~ (VDD - VDD - Vth3 ). j. Finally, when the potential of the nth scanning line 丨0 is changed from "low potential () If: potential (vs, H)", the first scanning transistor n, the second scanning transistor T2, and the first switch The transistor T5 is in a "loaded (〇FF)" state. At this time, the potential of the light emission control line 30 is changed from "high potential (Veh)" to a low potential (y, and, therefore, the connection transistor T4 and the second switching transistor T6 are turned on (〇n) state. The storage capacitor Cs is connected to the gate (G) terminal of the driving transistor T3, and the other terminal is connected to the scanning line j 透过 through the second switching transistor τ 6. Therefore, the gate voltage (Vg3) of the driving transistor Τ3 is equal to the scanning. Line 1 高 high potential) voltage minus storage capacitor Cs voltage (VS, H - Ves). Then the drive current through the drive transistor T3 is = (1/2) χ χ (V...U, where Vsg3 = VDD - Vg3 = VDD - (VS H - Vcs). At this time, the drive current (IDrive) is connected through The transistor T4 flows through the light-emitting element 40 to cause the light-emitting element 40 to emit light. In summary, the relationship between the data current (Lata) and the drive current (IDrive) is 1Drive = (1/2)X /5x [(2x IData) / )(1/2) +VDD —v"]2.

1254269 V. DESCRIPTION OF THE INVENTION (18) According to the above-mentioned driving principle and mathematical formula, it is known that the magnitude of the current outputted to the light-emitting element 4 is independent of the threshold voltage value (nh) of the driving transistor T3 itself, and the writing > The current (IData) size is related, so it can compensate for the variation of the threshold voltage caused by the process factors of the thin film transistor (TFT). Further, due to the voltage difference between the voltage source VDD voltage and the high potential (Vsh) of the scanning line 1 ,, the voltage at the gate (G) terminal of the driving transistor T3 is shifted -offset). Therefore, if the high potential (Vsh) of the scan line 10 is greater than the voltage source vdd voltage, a large data current Uata can be input at a low gray scale small drive current (lDrive) to reduce the current to the storage capacitor. The charging time of the parasitic capacitor can solve the problem of too long charging and discharging time. _ Fifth Embodiment: Referring to Fig. 5, there is shown a circuit diagram of a pixel in a fifth embodiment of the present invention. As shown in the figure: the present invention is a pixel driving circuit formed by each of the drawing lines 10 on the display panel and each of the data lines 20, and the driving circuit comprises: - a first scanning transistor N1 and a second scanning power In the crystal N2, the gate (G) of the two scanning transistors N1 and N2 is connected to the scanning line 1〇, and the source is connected to the data line 20.

A driving transistor N3, the source (s) of the driving transistor N3 is grounded. A connection transistor N4 is connected, and the source of the connection transistor N4 is connected to a drain (G) of the driver crystal N3 and a gate (G) of the first scan transistor N1 to be connected to an illumination control line 30. Connected to the first switch transistor N5, the source of the first switch transistor N5 is connected to a first voltage source VI, and the gate (G) is connected to the scan line 1〇.

Page 22 1254269

1254269 V. INSTRUCTION DESCRIPTION (20) The fifth embodiment of the circuit action 1, when the system performs the scanning motion as follows: The potential of the trace 10 is "the high field action to the nth scan line 1 〇, the nth scan the second scan The transistor Ν 2 and the skirt "amplifier", therefore, the first scanning transistor Ν 1, at this time, the nth illuminating control line is turned on and off (_ transistor Ν4 and the second switch, the potential is '' Low potential (U, so there is no current load (〇FF) in the connection phase, so in this (U writes the storage capacitor Cs when there is a second = ί Ϊ; even: J t drives the transistor N3 The gate is extremely and transparent to N5 to Csf "capacitor; put two: (four) 1, the first switch transistor gate voltage (u is equal to the H = t of the drive transistor N3, (V1 + V). Voltage source" minus storage Capacitor Cs voltage vcs 1/2) Γ; ;; lDrive) Λ lDrive=( drive gate N 3 source gate voltage ν

Gs3 m), (wherein the conductance of the driving transistor N3 is J gS3 = Vg3-Vl+Vr --gs, *g3 V 1 τ vcs y ^ ί-j , β: 觉 > "L l lData ) 4 After storing the current (I) of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity The current U, that is, am 2, when the voltage of the storage capacitor Cs is Vcs, causes the driving current_1 (1) of the drive transistor N3 to be equal to the data current (1_) on the data line 2Q,

Ii)ata = lDrive = (l/2)x y5x (Vgs3-Vth3)2, where u = Vg3 = vl+v"s.

At this point, the data writer completes the action. Therefore, the voltage of the storage capacitor Cs is L. Page 24 1254269 V. Description of the invention (21) = (2 X IData / yS ) (1/2) - (V1. 3. Finally, when the potential of the nth scanning line is 1 〇 When the "high potential (^ η ) " is changed to the 'low potential (VS L)", the first scanning transistor N1, the second scanning transistor N2, and the first switching transistor N5 are turned off (〇FF) state. At this time, the potential of the second light-emitting control line 30 is changed from "low potential (Ve l)" to "high potential (% η)", so that the connected transistor Ν4 and the second switching transistor Ν6 are turned on (ON). At this time, one end of the Cs storage capacitor is connected to the gate (G) end of the driving transistor n3, and the other end is connected to the second voltage source V2 through the second switching transistor N6. Therefore, the gate voltage of the driving transistor N3 is driven at this time. (Vg3) is V2 + VCs. Therefore, the driving current through the driving transistor N 3 is lDrive = (1 / 2 ) XX (vgs3 - Vth3 )2, where Vgs3 = Vg3 = V2 + Vcs. At this time, the driving current (IDrive) By connecting the transistor N 4 through the light-emitting element 4 〇, the light-emitting element 4 〇 emits light. In summary, the data current (iData) and the drive current are obtained. The relationship of (lDrive) is Live = (1/2)X /3x [(2x IData / /3 )(1/2) + V2 - VI]2. From the above-mentioned driving principle and mathematical formula, the output is illuminated. The magnitude of the current of the component 4 is independent of the threshold voltage (vth) of the driving transistor N3 itself, and is only related to the size of the written data current (iData), so that the criticality of the thin film transistor (TFT) due to process factors can be compensated. In addition, due to the voltage difference between the second voltage source V2 and the first voltage source VI, the gate voltage of the driving transistor N3 is offset (of f set), so if the second voltage source V2 is smaller than the first A voltage source V1 can input a large data current (IData) at a low gray-scale small driving current (Lrwe) to reduce the charging time of the current to the capacitor and the parasitic capacitance, and solve the problem of excessive charging and discharging time.

Page 25 1254269 V. INSTRUCTIONS (22) Sixth Embodiment: Please refer to the schematic diagram of the slave circuit shown in Figure 6. As shown in the figure, the sixth embodiment of the present invention shows a line 1 in the pixel. With each data line 2. The cross-construction-= is the same as the driving circuit of the fifth embodiment = the access is made by the illumination control line 30; the connection to the first-voltage is a constant + γ... The source of the first switching transistor Ν6 (S The first voltage source V2 is connected to the scan line 1〇. The circuit operation principle of the sixth embodiment is described as follows: · hL, when the system performs the scanning operation to the nth scanning line 10, the potential of the nth scan: line 1〇 is "high potential (Vsh)", so the first scan The transistor Νΐ, ^ a scan transistor Μ and the first switching transistor N5 are in a conducting (〇N) state. The potential of the nth light emission control line 3〇 is, low potential (Vu), so the connection electric b, the body N4 and the second switching transistor N6 are off (〇FF) ', so in this concealment is not There will be current passing through the illuminating element 4 〇 element to avoid the data current (Lau) being written into the storage capacitor (; S has a wrong action. At this time, the storage capacitor Cs is connected to the gate of the driving transistor N3 and through the second scan. The transistor N2 is connected to the data line 20, and the other end is connected to the nth light-emitting control line 3 through the first switching transistor N5. At the same time, part of the data current (IData) is transmitted from the data line 2〇 through the first scanning transistor N1. The first switching transistor 5 charges and discharges the Cs storage capacitor. At this time, the closing voltage (vg3) of the driving transistor N3 is equal to the low potential (VE, L) of the second illumination control line 30 minus the storage capacitor Cs. The voltage VCs, ie (VE, L + VCS), so the driving current (iDrive) by driving the transistor N3 is iDrive II

Page 26 1254269 V. Description of invention (23) (1 / 2) X cold X (Vgs3 Vth3) 2, (where Lu is the number of drives, the source of the drive crystal is asked to the pole voltage, T: this, the data current is equal to The storage capacitor plus I is driven by the driving current of the transistor N3, that is, ^^ 2. When the storage capacitor CS is thundered, , , , J) aU CS+ Vive °, the thief is private, and ^ T 'electric i is Vcs The drive electric catch (IDrive) by driving the transistor is equal to the data current I^IDrive = (l/2)x (Vgs3 - Vth3)2 on the data line 2, where v_ = v Dat^ . (2x IData / /3). /2) — (ve l The data writing operation is completed at this time. Therefore, the electric L voltage of the storage capacitor Csg is γ.

V th3 3, finally, when the potential of the nth scan line 1〇 is, • high potential (v"), turn N2 wide: one bit, the first scan transistor N1, the second scan transistor 2 and the first A switching transistor N5 is in a cut-off (〇FF) state. At this time, the potential of the nth light-emitting control line 30 is changed from "low potential (Ve l)" to "high potential", so that the connected transistor N4 and the second switching transistor N6 are in a conducting (〇N) state. At this time, one end of the Cs storage capacitor is connected to the gate of the driving transistor (the end, and the other end is connected to the scanning line 1 through the second switching transistor N 6 . Therefore, at this time, the gate voltage of the moving transistor N3 (Vg) 3) is Vsl + Vcs. So by driving the electric 曰曰 (4) 3 - the drive current is I[)rive =(1/2) χ θ χ u, where ==2'v =, L + vcs. The driving current (lDrive) causes the light-emitting element 4 to emit light by connecting the transistor to the light-emitting element 40. In summary, the data current (lData) and the driving current (I-J off, Vive = (1) are obtained. /2) X /5 X [(2 X IData / /3 )(1/2) +Vs,L _νΕ Η]2 Α From the above-mentioned driving principle and mathematical formula, it is known that the wheel is the current of the light-emitting element 40 The size is independent of the threshold voltage value (vth) of the driving transistor N3 itself.

1254269 V. Description of the invention (24) It is only related to the size of the written data current (IData), so it can compensate for the variation of the threshold voltage caused by the process factors of the thin film transistor (TFT). Further, due to the voltage difference between the low potential (vSL) of the scanning line 10 and the low potential (VE, L) of the light-emitting control line 30, the gate voltage of the driving transistor N3 is offset (〇 f f se t). Therefore, if the low potential (% L) of the scanning line 1 小于 is smaller than the low potential (VE L) of the light-emitting control line 3, a large data current (lDau) can be input at a low driving current (LD) of the low gray level. Reduce the charging time of the current to the parasitic capacitance' to solve the problem that the charging and discharging time is too long. Seventh Embodiment: Please refer to FIG. 7 , which is a schematic diagram of a pixel in the seventh embodiment of the present invention. As shown in the figure, the present invention is a pixel driving circuit formed by intersecting each scanning line 10 on the display panel with each of the data lines 20. The driving circuit in the basin is substantially the same as the driving circuit of the fifth embodiment. The source (s) of the first switching transistor N 5 is originally connected to the first voltage source v 1 to be grounded; the source (s) of the second switching transistor T6 is still the same as the fifth embodiment. A second voltage source V2. The principle of the circuit operation of the seventh embodiment is as follows: ^ 1. When the system performs the scanning operation to the nth scanning line 1 ,, the potential of the nth scanning 2 line 1i is ''high potential (Vs, H),,, Therefore, the first scanning transistor Ν1, the scanning transistor N2, and the first switching transistor N5 are in a conducting (〇N) state. The potential of the nth light-emitting control line 3〇 is, low (Vel), so the connection 匕: body N4 and the second switching transistor are off (〇FF), so there is no current passing through this 13⁄4 slave The light-emitting element 4 〇 element prevents the data current (Data) from being written into the storage capacitor Cs with an erroneous action.

1254269

The C s end of the storage valley is connected to the gate terminal of the driving transistor N 3 and the transistor N2 is connected to the data line 2G, and the other end is grounded through the first-opening. At the same time, part of the data current (Lata) is input from the data line 2 0 through the transistor N1 and the first switch transistor N5 to the Cs storage capacitor. At this time, the voltage of the gate of the transistor N3 is cs vcs, that is, (0 + Vcs). G3 is driven by the drive transistor N3 (1_) as 'x (Vgs3 - vth3)2, (where /3 is the source gate voltage Vgs3 of the drive transistor N3 driving the transistor N3 Vgs3 = ^ = 〇+ Vcs). The material current (iData) is equal to the current through the storage capacitor Cs (Ics) plus the second off-gate crystal through the first line of charge and discharge storage (1/2) X coefficient, which is driven by the drive 2, N3 ^ata =〇+ vcs. Since k stores the capacitance Cs as ycs, the driving current (iDrive) is equal to the data current (I_a) on the data line 20, ^Drive ~ (1/2) χ β X (Vg s3 - Vth3) ) 2, where Vg ; s3 at this time the data writing action is completed. Therefore, the voltage of the storage capacitor Cs is v = (2X iData / /5) 0 / 2) - ( 〇 - Vth3 ) 〇, '3, finally, when the potential of the nth scanning line 1〇, f high potential η) " When switching to ''low potential (vs, L)'', the first scanning transistor N?, the second scanning transistor N2, and the first switching transistor N5 are in an off (?FF) state. At this time, the potential of the light-emitting control line 30 is changed from "low potential (Ve l)" to "high potential (% η) π, so that the connection transistor Ν4 and the second switching transistor Ν6 are turned on (〇Ν) At this time, one end of the Cs storage capacitor is connected to the gate (G) end of the driving transistor N3, and the other end is connected to the second voltage source V2 through the second switching transistor N6.

Page 29

1254269 V. Inventive Note (26) Therefore, by driving -u, the gate voltage (Vg3) of the driving transistor N 3 is v 2 + Vcs, and the driving current of the moving transistor N 3 is iDrive = (ι/2) χ ^^(妒V^3 = Vg3 = V2 + VCS. At this time, the driving current (lDrive) flows through the light-emitting element 40 through the connecting transistor N 4 to cause the light-emitting element 4 to emit light. The relationship between current (IData) and drive current (IDrive) is Vive = (1/2) χ /5 χ [ (2 X IData / β )(1/2) + V2 _〇J 2 = (1/2) x 々 X[(2 X IData / /5 )(1/2) + V2] 2. From the driving principle and the mathematical expression described above, the magnitude of the current output to the light-emitting element 40 and the threshold voltage of the driving transistor N3 itself are known ( Vth) is irrelevant, only related to the size of the written current (iData), so it can compensate for the variation of the threshold voltage caused by the process factors of the thin film transistor (TFT). In addition, due to the second voltage source V2 and ground ( The voltage difference of 0) causes the gate voltage of the driving transistor N3 to have an offset (〇f fset). Therefore, if the second voltage source V 2 is smaller than the ground (〇), the small gray drive in the low gray level When the current (I) is used, a large data current (iData) can be input to reduce the charging time of the current to the capacitor and the parasitic capacitance, and solve the problem that the charging and discharging time is too long. Eighth embodiment: Please refer to "Fig. 8" The figure shows a circuit diagram of a pixel in the eighth embodiment of the present invention. As shown in the figure, the present invention is a pixel driving circuit formed by intersecting each scanning line 10 on the display panel with each data line 2〇. The driving circuit is substantially the same as the driving circuit of the sixth embodiment, except that the source (s) of the first switching transistor N5 is originally connected to the grounding control line 3 〇 to be grounded; the second switching is electrically The source of the crystal T6 is still the same as that of the sixth embodiment or is connected by the scanning line 1 第. Page 30 1254269 V. Description of the invention (27) The principle of the circuit operation of the eighth embodiment is as follows: , the second broadcast i- ^ j (Vs, h), therefore the first scanning transistor N1. At this time, the W0 body (10) and the first switching transistor N5 are in an ON state (ON), and the potential of the transistor light control line 3〇 is low, Ve, l), so even a stage is not = one pass The body N6 is off (0FF), so here, ώ(Ι)'耷 current passes through the components of the light-emitting element 40, so as to prevent the data from being electrically caught (IData) when writing to the storage capacitor Cs. The milk-end connection drive transistor N3 is extremely and transparently connected to the data line 2〇, and the other end is transmitted through the first-open period:=Ϊ while part of the data current (1) is charged and discharged by the data line 20 ΐ Λ Λ Λ Λ Λ Λ 第一 第一 Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ Λ The drive current (I) AI = (1/2) X /3 X (v - v V r Gans ^ Drive) of the driving transistor N 3 is IDrive — gs3 th3), (where /5 is the driving power) The conductance of the crystal N3: capital: = source voltage V- 〇 ^). Because one, ' / melon (lData) is equal to the current through the storage capacitor Cs (Ics) plus the voltage through the two transistors N3: drive current (1" ^ field storage valley Cs is vcs, so that through the drive transistor N3 Drive current (Uve), etc. ☆ data current (iData) on data line 20, lData = (1/2)x /5x (Vgs3 - Vth3)2 , where Vgs3 = Vg3 = 0 + Vcs data write action This is done. Therefore, the voltage of the storage capacitor Cs is one (2 X Uata / /3 )(1/2) ~ ( Q _ 乂 ) ). , 1254269 V. Invention description (28) 3. Finally, when the ηth scan line When the potential of 丨〇 is, and the high power is "low potential (VS, L)", the first scanning transistor N1, the second scanning transistor 曰2 N2 and the first switching transistor N5 are turned off (〇FF) At this time, the potential of the control line 30 is changed from "low potential (I)" to "high potential (H, and thus the connection transistor N4 and the second switching transistor N6 are in a conducting (〇N) state." The capacitor-end is connected to the gate terminal of the driving transistor (10), and the other end is connected to the 11th scanning line 1〇 through the second switching transistor N6. Therefore, the gate of the driving transistor N3 is electrically driven at this time. The pressure (Vg3) is % l + ^. Therefore, the driving current through the driving transistor N3 is lDrWe = (1/2) χ basin by V y a. ^ v gs3 y th3 ^ , gs3 — g3 — S, L + Vcs. At this time, the driving current (IDrive) flows through the light-emitting element 4 透过 through the connection transistor N 4 to cause the light-emitting element 4 q to emit light. / The above, the relationship between the data current (丨^) and the driving current () is IDrive = (l/2)x /3χ ( 2 X IData / β )(1/2) + ys L _〇J 2 = (1/2) x /9 x[(2x IData/ "I/.+ Vs l]2. ' From the above-mentioned driving principle and mathematical formula, it is known that the magnitude of the current output to the light-emitting element 4 is independent of the threshold voltage value (vth) of the driving transistor N3 itself, and only the data current to be written (iData) The size is related, so it can compensate for the variation of the threshold voltage caused by the process factors of the thin film transistor (TFT). In addition, the driving voltage is caused by the voltage difference between the low potential (Vsl) of the scan line 10 and the ground (v = 〇). The gate voltage of the crystal N 3 has an offset (0 ffset), so if the low potential (VS, L) of the scan line 10 is smaller than the ground (〇), a small drive current at a low gray level ( In Lrive), a large data current (IData) can be input to reduce the charging time of the current and the parasitic capacitance, and solve the problem of excessive charging and discharging time.

Page 32 1254269 V. Description of the Invention (29) In combination with the above description, the active display driving circuit proposed by the present invention has the following advantages: 1. Compared with "US Patent No. 6,373,454, US 6,229,506", the input current of the present invention is The output current ratio is the relationship of [output current = Αχ input current + Β], effectively solving the problem of excessive charging and discharging time at low current.

2. Compared with "US Patent US 6,359,605, US 6,501,466, US 6, 535, 1 85", this case achieves the relationship between input current and output current [output current = AX input current + B], using capacitive coupling (capacitive The principle of coupling, rather than the use of a current mirror structure, eliminates the need for thin film transistor (TFT) component matching. Therefore, the factors affecting the process can be alleviated, which is beneficial to the improvement of the panel yield. 3 ·Compared with the circuit of the above 1 · and 2 · patents. In order to achieve the full darkness of the shell size, due to the capacitive coupling action in the circuit of the present case, the gate and source voltages (Vgs) of the driving transistor can be surely made smaller than the threshold voltage (Vth) of the driving transistor. The transistor does not generate current, so it can be sure that the illuminating element does not illuminate 'contrast'. 4. Compared with Samsung's paper "a New Current Programmable Pixel Structure for large-Size and High-Resolution AMOLEDs" (International Display Workshops 20 0 2 (IDW 20 02)): a · The case reaches the input current and output Current [output current = ax input. current + B], only one capacitor is used, so there is no two capacitors

Page 33 1254269 V. Inventive Note (30) ' --- One: The capacitance value changes due to the variation of the capacitance value, and the crystal output current is changed. Therefore, the improvement of the yield of the y ^ board can be alleviated. & hi factor, good for face electric 2 Π 2 rounds: current and output! Flow [round current = Αχ input 3 佶 use * 徊 φ two 彳 use a power valley and two voltage levels; not 疋 可 可 圭 - : : : : : : : : : : : : : : : : : : : : : : : : : : : : Due to the influence factor of the process, it is beneficial to the improvement of the panel yield. 0 c. In this case, the relationship between the wheel current and the output current (output current = Αχ input power k + B) is achieved. Only one capacitor is used, so the aperture ratio is high. 〇5 · Compared with the general voltage type driving circuit, the present invention is a current type driving circuit which can solve the problem of uneven characteristics of the thin film transistor (TFT) element, and automatically compensates for the threshold voltage (Vth) and the electron mobility (M〇). Variation of binty) 〇6. Compared with the voltage type driving circuit, the current type driving circuit of the present invention can solve the problem of the wire resistance ir drop of the voltage source VDD. The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a second view of the present invention, and FIG. 3 is a fourth view of the present invention, which is a fifth drawing of the present invention. Figure 6 is a seventh embodiment of the present invention, and is a figure 8 of the present invention, which is a description of the reference numerals of the present invention. Scanning line 10 emission control line 3 0 First scanning transistor T1 Driving transistor T3, N3 First switching transistor T5 Voltage source VDD Second voltage source V2 Schematic diagram of the internal circuit of the first embodiment. A schematic diagram of a circuit within a pixel of the second embodiment. A schematic diagram of a circuit within a pixel of the third embodiment. A schematic diagram of a circuit within a pixel of the fourth embodiment. The fifth embodiment is a schematic diagram of the circuit inside the pixel. A schematic diagram of a circuit within a pixel of the sixth embodiment. A schematic diagram of a circuit within a pixel of the seventh embodiment. A schematic diagram of a circuit within a pixel of the eighth embodiment. Data line 2 0 Light-emitting element 4 0, N1 Second scanning transistor T2, N2 Connection transistor T4, N4, N5 Second switching transistor T6, N6 First voltage source V 1 Storage capacitor C s

Page 35

Claims (1)

1254269 VI. Patent Application Scope—An active display driving circuit. The present invention is constructed by interfacing a scanning line with each data line, and wherein the driving circuit comprises: a driving circuit, a scan transistor and a second scan transistor, the 哕-m-body pole (6) is connected to the scan line, the source (S) is connected to; = electrical connection; - drive transistor 'the drive transistor The source (8) is connected to the upper line of the electric bake—connecting the transistor, the source (s) of the connected transistor and the drain of the second scanning transistor (D) ^ describing the connection of the electro-optical control line; (G) and a first switch transistor, the first voltage source of the first switch transistor, the 'gate (G) is connected to the scan, the line; the original (8) connected - the first open body' The source of the second switching transistor (8) is connected to the voltage source, and the gate (G) is connected to the light-emitting control line. According to the scanning transistor (8) and the driving transistor, a light-emitting element, one end of the light-emitting element is an anode, crystal The bungee (D) is connected, and the other end is dangerous and connected to the above The active display drive circuit according to the first item of the mr range, the switch transistor and the second switch electro-crystal system are ρ通, moxibustion oxide + conductor (PM0S) transistors. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; The active display driving circuit of the first aspect of the invention, wherein the voltage value of the second voltage source is greater than the first voltage source. Of which 5. Please! According to the active display driving circuit of the first item, the first voltage source with the middle side can be accessed by the scanning line. Spontaneous first line access 'this second voltage source. 6, U: The active display drive circuit described in item 1, ο the voltage source can be accessed by the voltage source. 7. The active 鼗 φ φ as described in claim 1 wherein the 'the first voltage source can be accessed by the Ray m m no drive circuit' scan line. The electric source is connected to the second voltage source, and the driving circuit is displayed by the second: ί ί ί ί, the present invention is a display panel and a parent data line, wherein the driving circuit comprises: The circuit, the Β曰#3 与 body and the second scanning transistor, the two Sweeping φ the positive body j gate (6) is connected to the scanning line, and the source (8) is connected to the ==电二!θ body, the driving transistor The source (8) (4); the drain of the crystal (0) and the first scan I source and (s) /, the above-mentioned drive evaluation of the two transistors, the drain (D) phase of the remote power (G) and a light The control line is connected; the first gate first voltage source 'gate (G) is connected to the scan line; ΒΘ &quot;, the pole (S) is connected to the second switch Crystal 'the source of the second switching transistor (s) connected - 1254269 The first = voltage source, the gate (G) is connected to the light-emitting control line; : the storage capacitor has two ends, and one end is simultaneously connected with the drain (D) of the above-mentioned first :::! The other end is connected to a drain element (D) of the above field transistor and a gate (G) of the driving transistor, and the other end is a cathode connection. The light-emitting element has an anode at one end and is connected to a voltage source. The cathode is connected to the drain (D) of the connected transistor. The active display driving circuit described in item 8 of the φ · f application patent range, the fish-pull-sweeping "transistor, the second scanning transistor, the driving transistor, the first switching transistor and The second switching electro-crystal system is a N i-channel metal oxide semiconductor (NM0S) transistor. The active display driving circuit according to item 8 of the Shenqing patent scope, and the 4 illuminating element are an electroluminescent element (EL). Device). Bean ^ · The active display drive circuit as described in item 8 of the scope of the patent application, the voltage value of the read second voltage source is smaller than the first voltage source. , 1 ^ · ^ 凊 凊 凊 patent scope In the active display driving circuit %, in the eighth item, the first voltage source may be accessed by the illumination control line, and the second voltage The source can be accessed by a scan line. The active display driving circuit of claim 8, wherein the first voltage source is grounded. , 1 = · Active display drive circuit as described in claim 8 of the patent scope. The first voltage source can be grounded, and the second voltage source can be scanned. Page 38