TWI254083B - ITO sputtering target and production method therefor - Google Patents

Abstract

To provide an ITO (indium-tin-oxide) sputtering target having a structure which suppresses the frequency of arcing caused by intermediate compound phases, and to provide a production method therefor. The target uses an ITO sintered compact consisting of a base phase consisting of cubic system In2O3, and having relative density of >= 99%, and an intermediate compound phase of IN2O3 and SnO2. The ratio between the elliptic major axis and the minor axis in the intermediate compound particles in the SEM (scanning electron microscope) observation of the optional cross-section in the sintered compact is >= 2.1, or >= 80% of the number of the intermediate compound particles have polygonal shape including recessed faces. The target is obtained by mixing the powder of In2O3 and the power of SnO2, compacting the powdery mixture, sintering the compact in a pure oxygen current heated at 1,550 to < 1,650 DEG C, and thereafter reducing its temperature from the sintering holding temperature to at least 1,300 DEG C at a temperature reduction rate of >= 200 DEG C/hr.

Description

1254083 Ministry of Economic Affairs, Intellectual Property Office, Employees' Consumer Cooperatives, Printing A7 B7 V. Technical Description of the Invention (1) The present invention relates to an I T〇 sputtering target for forming an I T〇 transparent conductive film and a method for producing the same. [Prior Art] The manufacturing method of the IT ◦ (Indium Tin Oxide) film of the transparent conductive film can be roughly distinguished by physical methods such as a spray thermal decomposition method and a CVD method, and a physical method such as an electron beam evaporation method or a sputtering method. Film formation method. Among them, the sputtering method using the IT 0 target is easy to be large in area, the resistance 値 and the transmittance of the obtained film are less changed with time, and the film formation conditions are easily controlled, so that it can be applied to various types. field. Since the I T 〇 film has high conductivity and high transmittance and is easy to be microfabricated, it is used in a wide range of fields such as display electrodes for flat panel displays, window materials for solar cells, and antistatic films. In particular, in the field of flat panel displays of liquid crystal display devices, in recent years, with the increase in size and definition, it has been required to reduce the atomization of the I T film of the display electrodes. The amount of particulate adhesion on the substrate is closely related to the frequency of abnormal discharge during sputtering, and the reduction of abnormal discharge can effectively reduce the number of particles. The method of increasing the density of the IT 0 sintered body for the sputtering target can effectively reduce the abnormal discharge, and the method of increasing the density, for example, a method of using oxygen pressure sintering or the like, or a method of using an oxygen pressure sintering method, or Japanese Patent Publication No. Hei 8-096399 A method of using fine tin oxide powder or the like is known. It also reveals that in addition to high density and lowering of the intermediate compound phase of the sintered body (composite oxide phase of indium oxide and tin oxide, the oxidation of tin oxide with the tin oxide is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm).驿 4 - (Please read the notes on the back and fill out this page)

1254083 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (2) Indium phase is not N). For example, the relative density is 99% or more, and the single-phase structure (area ratio of the Sn〇2 phase and the intermediate compound phase) is disclosed in Japanese Laid-Open Patent Publication No. Hei 07- 1 5 8 3 0 8 It is 1〇% or less), and the specific resistance is 1x 10·3 Ω · cm or less of the IT 〇 sputtering target. The purpose of the sputtering target is to prevent deterioration of the uniformity of the film characteristics due to abnormal discharge and to prevent an increase in the film resistance caused by blackening of the surface of the sputtering target due to abnormal discharge, and the amount of tin is reduced to 2 to 6 wt%. After the composite powder of indium oxide-tin oxide having an average particle diameter of 0·1 μm or less is formed by pressing, sintering is performed at 1,500 to 1,700 ° C in a pressurized oxygen atmosphere of 1 to 10 atmospheres. Problem] However, the performance required for IT film is increasing, and there is a strong demand for cost reduction, which requires further improvement. [Means for Solving the Problem] The present inventors carefully examined the frequency of occurrence of abnormal discharge of an IT ◦ sputtering target composed of a sintered body having a relative density of 9 9 % or more, and found that the frequency of occurrence of abnormal discharge is related to the intermediate compound. The shape is closely related, and the scanning electron microscope (SEM) is used to observe the ratio of the elliptical length to the minor axis of the intermediate compound particles in any cross section set to 2.1 or more, and the shape thereof is a polygonal shape having a concave surface, which can reduce the occurrence of abnormal discharge. frequency. In other words, the present invention is a sputtering target comprising an IT〇 sintered body obtained by mixing, molding, and sintering an indium oxide powder and a tin oxide powder, wherein the relative density is 99% or more, and the sintered body is a cubic indium oxide. The I-paper scale applies to the Chinese National Standard (CNS) A4 specification (21〇&gt;&lt;297 mm) (please read the notes on the back and fill out this page)

-5- 1254083 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperatives Printed A7 B7 V. Description of Invention (3) The mother phase and the 2-phase structure of the intermediate compound phase of indium oxide and tin oxide, (1) observed by SEM In the case of any cross section of the sintered body, the elliptic length to the minor axis ratio of the intermediate compound particles is 2.1 or more, or (2) the intermediate compound particles in the arbitrary cross section of the sintered body are observed by SEM. a polygonal concave-shaped IT ◦ sputtering target, and (3) by sintering and molding indium oxide powder and tin oxide powder, after sintering in a pure oxygen stream of 1550 ° C or more and 1 650 ° C or less, A method for producing an IT 0 splash target characterized by a sintering temperature of at least 1300 ° C and a cooling rate of 200 ° C / hour or more. The invention is described in detail below. The I T ◦ sputtering target of the present invention can be produced, for example, by the following method. First, the desired proportion of indium oxide powder and tin oxide powder are put into a barrel for a ball mill, and the mixed powder is prepared by wet or dry mixing. The average particle diameter of the powder to be used is preferably 1.5/m or less, and more preferably 〇1 to 1. 5/m or less. The use of such a powder increases the effect of the density of the sintered body. In the present invention, the content of tin oxide in the mixed powder is Sn 〇 2 / (

In2〇3 + Sn〇2) is preferably 8 wt% or more and 15 wt% or less. Thereby, the resistivity of the film obtained by the sputtering method can be reduced. The powder obtained as described above is formed by a molding method such as a press method or a casting method to produce an IT molded article. When a molded body is produced by a press method, the mixed powder is poured into a mold of a predetermined size, and then pressed into a molded body by a press at a pressure of 1 〇 0 to 3 0 k g / c m 3 . At this time, a binder such as P V A may be added as necessary. When the molded body is produced by the casting method, the mixed powder, water, binder and dispersing agent are mixed together to form a pulp paper. The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the back of the note first) Please fill out this page again)

-6_ 1254083 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 5, Invention Description (4) Material, the slurry with a viscosity of 50 to 5,000 centipoise is prepared and injected into the mold for molding A molded body is produced in the middle. The molded body obtained as described above can be subjected to a cold press or the like (C I P ) if necessary. At this time, C; [pressure of p is sufficient to obtain a sufficient compacting effect, and the pressure is 1 t 〇n/cm 2 or more, more preferably 2 to 5 t ο n / cm 2 〇 when forming by casting, in order to remove residual In the case of the moisture in the molded body after the CIP and the organic matter such as the binder, the drying treatment and the removal of the binder may be carried out at a temperature of 300 to 50,000 ° C for about 5 to 20 hours. Further, even when molding is carried out by a press method, it is preferable to carry out the same debonding treatment when a binder is used for molding. Next, the molded body obtained as described above was fired. The temperature increase rate is not particularly limited, but is preferably from 10 to 400 ° C /hr from the viewpoint of shortening the sintering time and preventing cracking. In the present invention, the subsequent temperature distribution is important. The sintering holding temperature is 1 5 50 ° C or more and 1 6 5 0 ° C is not full, and it is preferably 1 5 80 ° C or more and 1 6 2 0 ° C or less. In this temperature range, the solid solution of the tin oxide in the indium oxide lattice is promoted after the low temperature solidification limit is exceeded. The holding time is 5 hours or longer, preferably 5 to 30 hours. Thereby, a high-density sintered body can be obtained relatively easily. The cooling system is reduced to at least 1 300 ° C and the temperature is lowered at a cooling rate of 200 ° C / h or more. It is preferably 250 ° C /hr or more, more preferably 300 ° C /hr or more. This cooling rate is not the setting of the temperature characteristics in the furnace at the time of sintering, but the temperature inside the furnace. The upper limit of the cooling rate is not particularly limited, but the test (please read the back of the note first and then fill out this page)

This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) 1254083 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed A7 B7 V. Invention Description (5) When preventing cracking of sintered body, 500 °C / Below the hour is better. In the high temperature field, the tin oxide solidified above the solid solution limit of low temperature precipitates during the cooling process to form an intermediate compound, but the temperature drop rate as described above can reduce the precipitation amount, and the SEM can be used to observe the arbitrary break of the sintered body. The ratio of the elliptical length to the minor axis of the intermediate compound particles in the surface is 2.1 or more, and includes a polygonal shape of a concave surface. The results of observing the surface structure of the I T ◦ sputter target of the present invention by SEM are shown in Fig. 1. The equivalent of the intermediate compound particles in the SEM image is shown in Fig. 2. The term "concave-containing particles" as used in the present invention means that at least a part of the outline of the particles contains a concave surface as shown in Figs. 1 and 2 . The I T 〇 sputtering target having a concave polygonal shape of the present invention means that 8 〇% (in terms of number) of the intermediate compound particles or more contains a concave surface. Forming the intermediate compound phase in such a shape is effective for suppressing abnormal discharge in sputtering. Although the mechanism of this phenomenon is still unclear, if the intermediate compound phase having the above shape is rapidly cooled by sintering at a high temperature as described above, reproducibility is good and abnormal discharge can be suppressed. If it is not sintered at 1 5 50 °C or higher, the shape of the intermediate compound observed by SEM is mainly close to a circular shape and has no concave shape, and the elliptical length to the axial ratio is also less than 2.1. If it is not cooled at a rapid rate of 20 (TC / hour or more, it is impossible to form an intermediate compound having a major elliptical length and short axis ratio of 2.1 or more and containing a concave surface, and the precipitation amount of the intermediate compound phase is increased, and the average sectional area of the intermediate compound particles is exceeded. 5 μ m 2, so the effect of reducing the abnormal discharge can not be obtained. The cooling rate is reduced to below 1 300 ° C. In order to prevent cracking of the sintered body, the paper can be applied to the Chinese National Standard (CNS) A4 specification (21 〇 X 297 PCT) (Please read the notes on the back and fill out this page)

-8 - 1254083 Printed by the Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Α7 Β7 V. Invention Description (6) Set to 100 °C/hour or less. Decrease to 120 (the temperature is slower than Tc). The temperature setting and cooling rate can be determined by the capacity of the sintering furnace, the size and shape of the sintered body, the ease of cracking, etc. The atmosphere during sintering is In the oxygen flow, the ratio of the oxygen flow rate (L / mi η ) and the amount of the molded body (kg) (input weight/oxygen flow rate) when oxygen is introduced into the furnace during sintering is set to 1.0 or less. The high-density sintered body. The method for measuring the elliptical length-to-short axis ratio, the shape, and the average cross-sectional area of the intermediate compound particles of the present invention is, for example, the following method. First, the IT〇 sintered body is cut into an appropriate size and then subjected to surface honing. The surface of the sintered body was photographed using FE (Field Emission)-SEM, and the quantitative analysis of each particle was carried out, and then divided into an S indium-fused indium oxide phase and an intermediate compound phase. Next, an SEM image classified as a crystalline phase was used. It is stored in a computer for image analysis. The present invention is measured by the software name "Image-Pro Plus" manufactured by Modia Cybornctics, Inc. The elliptical length to the axial ratio of the intermediate compound particles. The ratio of the long axis length to the short axis length (long axis/short axis) of the equivalent ellipse (symmetric particles and the same area, and the physics are said to be equal to the first and second dipole moments) The polygonal shape including the concave surface was confirmed as the particle shape of the intermediate compound by the results of quantitative analysis and visual observation of the SEM photograph. The average cross-sectional area was determined by the quantitative analysis and the number of particles (η) was divided by the intermediate compound. The sum of the areas of the particles (S.) is obtained. The paper size is applicable to the Chinese National Standard (CNS) Α4 specification (210x297 mm) (please read the notes on the back and fill out this page)

1254083 A7 B7 V. INSTRUCTION DESCRIPTION (7) In the present invention, the higher the relative density, the more the effect of reducing the abnormal discharge can be obtained, so that it is preferably 99.5 % or more, more preferably 99.7% or more, and particularly preferably 9 9 . 8 % or more. fPlease read the notes on the back and fill in this page. In addition, the relative density (D) of the present invention refers to the theoretical density obtained by adding the average density of I η 2〇3 and S η 0 2 (d Relative ambiguity. The theoretical density (d) obtained from the additive average means that, in the target composition, when the mixing amounts of I η 2〇3 and S η〇2 powder are a and b ( g ), respectively, I n 2〇3 and The true density of S η 〇 2 is 7.18, 6.95 (g/cm 3 ), which is obtained by d (a + b) / ((a / 7 · 18) + (b / 6.95)). When the measured density of the sintered body is d 1 , the relative density is obtained by the formula: D = dl / dxl. Then, the sintered body is subjected to a shape required for grinding and engineering, and if necessary, an indium solder or the like is bonded to a bottom plate made of oxygen-free copper or the like to obtain an I T ◦ sputtering target of the present invention. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperatives, in the sputtering apparatus, using inert gas such as argon and oxygen gas as a sputtering gas if necessary, plus dc or rf electric field for sputtering. The effect of the present invention can be reduced by forming an IT tantalum film on a desired substrate to reduce the amount of abnormal discharge. [Examples] Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited to these examples. This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) -10- Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1254083 A7

[Examples] (Example 1) 9 parts by weight of an indium oxide powder having an average particle diameter of 0 · 5 / m and a weight of 1 part by weight of a tin oxide powder having an average particle diameter of 0.5 / m were placed in a can of polyethylene. The mixture was mixed in a dry ball mill for 72 hours to prepare a mixed powder. The bulk density of the above mixed powder was measured to be 2.0 g / c m 3 . This mixed powder was placed in a mold and pressed at a pressure of 300 kg / c m 2 to form a molded body. This formed body was subjected to C I P treatment at a pressure of 3 t 〇 n / c m 2 . Then, this molded body was placed in a pure oxygen atmosphere sintering furnace and sintered under the following conditions. (Sintering conditions) Heating rate: 100 ° C / hour, sintering temperature: 160 ° ° C, sintering time: 6 hours, atmosphere: starting from 800 ° C at the temperature rise, 400 ° C at the temperature drop, Pure oxygen is introduced into the furnace at (input weight/oxygen flow rate) = 〇·8, and the cooling rate is 400 ° C / hr from 1 600 ° C to 1 200 ° C, and the temperature below 50 ° c /hour. The density of this sintered body was measured by the Archimedes method. The results are as shown in Table 1. The sintered body was cut into a target sintered body of 5 x 7 inches and a thickness of 6 mm by wet processing and a sample for SEM analysis. The surface structure of this sample was measured by SEM observation as shown in Fig. 1. The intermediate compound portion of Fig. 1 is shown in black as shown in Fig. 2. Also, the density, the elliptical length-to-axis ratio, shape and average of the intermediate compound particles are measured. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). (Please read the back note and fill out this page)

-11 - 1254083 Printed by the Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative A7 B7 V. Description of the invention (9) The results of the sectional area are shown in Table 1. A target sintered body and an oxygen-free copper base plate were bonded using indium solder to form a target. The target was continuously discharged under the following sputtering conditions to observe the amount of abnormal discharge (sputtering conditions). DC power: 3 0 0 w, gas pressure: 7.0 m T 〇rr, sputtering gas: A r + 〇 2, sputtering gas The oxygen concentration (〇2/A r ) is 〇·〇 5%, the discharge time is 66 hours (the residual thickness of the target is about 1 mm), and the oxygen concentration is set to the lowest 电阻 of the resistivity of the film. The cumulative number of occurrences of the abnormal discharge calculated during the 66-hour continuous discharge is shown in Table 1. The cumulative number of abnormal discharges is very low. (Example 2)

The sample for the IT target and the SEM analysis was prepared in the same manner as in Example 1 except that the temperature drop rate from 1 600 ° C to 1 200 ° C was changed to 35 (TC / hour). The density and the ellipse of the intermediate compound particles were measured. The results of the long-short axial ratio, shape, and average cross-sectional area are shown in Table 1. The results of the continuous discharge test in the same manner as in Example 1 are shown in Table 1. The cumulative number of occurrences of the abnormal discharge was low. In addition to 1 600 ° C ~ 120 (TC temperature is reduced to 300 ° CM, the paper size applies to China National Standard (CNS) A4 specifications (210X297 mm); -12- (please read the back of the precautions before Fill in this page)

1254083 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperatives Printed A7 B7 __ V. Inventive Note (Other than the same method as in Example 1 to prepare samples for I τ ◦ target and SEM analysis. Density, intermediate compound particles The results of the elliptical length-to-axis ratio, shape, and average cross-sectional area are shown in Table 1. The results of the continuous discharge test in the same manner as in Example 1 are shown in Table 1. The cumulative number of occurrences of the abnormal discharge was low. 4) Samples for IT target and SEM analysis were prepared in the same manner as in Example 1 except that the temperature drop rate from 1 600 ° C to 120 ° C was changed to 200 ° C / hr. Density and intermediate compound were measured. The results of the elliptical length-to-axis ratio, shape, and average cross-sectional area of the particles are shown in Table 1. The results of the continuous discharge test in the same manner as in Example 1 are shown in Table 1. The cumulative number of occurrences of the abnormal discharge was low. Example 5) IT was produced in the same manner as in Example 1 except that the temperature drop rate from 1 600 ° C to 1 300 ° C was changed to 400 ° C /hr, and the temperature below was 50 ° C /hr. The sample for the target and the SEM analysis. The results of measuring the density, the elliptical length-to-minor axis ratio, the shape, and the average cross-sectional area of the intermediate compound particles are shown in Table 1. The results of the continuous discharge test in the same manner as in Example 1 are shown in Table 丨. The cumulative number of abnormal discharges is very low. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) &quot;&quot; -13- (Please read the back note and fill out this page)

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1254083 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing ______B7 V. Invention description (li) (Comparative example 1) except that the sintering temperature is 1 500 ° C, and 150 (TC ~ 120 CTC cooling speed is changed to 4 0 0 The sample for IT ◦ target and SEM analysis was prepared in the same manner as in Example 1 except for ° C / hr. The surface structure of the sample for analysis was determined by SEM observation as shown in Fig. 3, and the intermediate compound portion of Fig. 3 was used. The results are shown in Fig. 4. The results of measuring the density, the elliptical length-to-minor axis ratio, the shape and the average cross-sectional area of the intermediate compound particles are shown in Table 1. The results of the continuous discharge test in the same manner as in Example 1 are shown in the table. As shown in Fig. 1. A number of abnormal discharges occurred. (Comparative Example 2) An IT target was produced in the same manner as in Example 1 except that the cooling rate was changed from 1 600 ° C to 120 (TC was changed to 1 〇 (TC / hour). The sample for SEM analysis was used. The results of measuring the density, the elliptical length-to-minor axis ratio, the shape, and the average cross-sectional area of the intermediate compound particles are shown in Table 1. The results of the continuous discharge test in the same manner as in Example 1 are shown in Table 1. A large number of abnormal discharges occurred. (Comparative Example 3) The same as Example 1 except that the sintering temperature was 1,500 ° C and the temperature drop rate from 1,500 ° C to 1 200 ° C was changed to 100 ° C / hr. Method for making samples for IT 0 target and SEM analysis. Density, elliptical length and short axis ratio of intermediate compound particles, shape and paper size are applicable to China National Standard (CNS) A4 specification (210X297 mm) (please read the back) Please fill out this page again)

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-14- 1254083 A7 B7 V. DESCRIPTION OF THE INVENTION (The results of the average sectional area are shown in Table 1. The results of the continuous discharge test in the same manner as in Example 1 are shown in Table 1. As a result, a plurality of abnormal discharges occurred. Density [%] Ellipse length axis than concave surface ratio [%] Average sectional area [μ m 2] Cumulative calculation of abnormal discharge [times] Rabbit Example 1 99.7 2.17 87 3.72 121 Example 2 99.7 2.16 86 3.85 133 Example 3 99.8 2.15 85 4.03 155 Example 4 99.8 2.12 83 4.88 192 Example 5 99.8 2.16 86 3.81 131 Comparative Example 1 99.7 1.7 70 6.21 375 Comparative Example 2 99.8 2.02 78 7.15 398 Comparative Example 3 99.8 1.6 69 5.01 366 (Please read the back Please fill out this page again)

t Printing by the Intellectual Property Office of the Ministry of Economic Affairs, Employees' Consumption Cooperatives [Effects of the Invention] According to the present invention, it is possible to provide an I T 〇 sputtering target in which abnormal discharge occurs less and the fine particles on the substrate are lowered. [Simple description of the drawing] [Fig. 1] shows the surface of the IT 0 sputtering target prepared in Example 1. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -15- !254〇 83 A7 ----~_______^ V. Description of the invention (Structure diagram. [Fig. 2] shows a graph corresponding to the middle compound particles of Fig. 1 in black. [Fig. 3] shows that Comparative Example 1 is obtained. The surface structure of the IT 〇sputter target. [Fig. 4] shows a portion corresponding to the intermediate compound particles in Fig. 3 in black. (Please read the notes on the back and fill out this page)

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Claims (1)

1254083 VI. Application for Patent Scope 9 1 1 〇6 3 6 6 Patent Application Revision of Chinese Patent Application Revision of the Republic of China on October 8, 1993 (please read the notes on the back and fill out this page) 1 · An IT The sputtering target is characterized in that the indium oxide powder and the tin oxide powder are mixed, formed, and sintered to form a miscellaneous plating of the IT 0 sintered body, and the oxidation in the mixed powder of the indium oxide powder and the tin oxide powder. The tin content is Sn 〇 2 / ( In 2 〇 3 + Sn 〇 2 ) is 8% by weight or more, less than 15% by weight, and the relative density of the sintered body is 99% or more, and the sintered body is oxidized by cubic crystals. a mother phase composed of indium and a two-phase structure of an intermediate compound phase of indium oxide and tin oxide, and an elliptical length-axis ratio of the intermediate compound particles of any cross section of the sintered body observed by a scanning electron microscope is 2 · 1 or more At the same time, the average cross-sectional area of the intermediate compound particles is 5 μηη 2 or less. Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative 2, an I Τ〇 sputtering target characterized by sputtering of an I Τ 0 sintered body obtained by mixing, forming and sintering indium oxide powder and tin oxide powder. The target, the tin oxide content in the mixed powder of the indium oxide powder and the tin oxide powder is Sn 〇 2 / ( In 2 〇 3 + SnO 〇 is 8 wt% or more, less than 15 wt%, and the relative density of the sintered body is 9 9 % or more, the sintered body is composed of a mother phase composed of cubic indium oxide and a two-phase structure of an intermediate compound of indium oxide and tin oxide; observation of an arbitrary cross section of the sintered body using a scanning electron microscope More than 80% of the number of intermediate compound particles is a polygonal shape containing a concave surface, and the average cross-sectional area of the intermediate compound particles is 5. um2 or less. The paper scale is applicable to the Chinese national standard (specification (210X297 mm) ~ 1254083 A8 B8 C8 D8 VI. Patent Application Scope 3. A method for manufacturing an IT ◦ sputter target, characterized in that IT 〇 sintering is obtained by mixing, forming and sintering an indium oxide powder and a tin oxide powder. In the method for producing a ruthenium plated product, the tin oxide content in the mixed powder of the indium oxide powder and the tin oxide powder is 8% by weight or more, and is less than 15% by weight, and is less than 15% by weight. The sintering system is sintered at a temperature of 155 ° C or higher and is sintered in a pure oxygen stream of less than 1 650 ° C. The sintering temperature is reduced to at least 1 300 ° C and the cooling rate is 200 ° C / hr or more. The manufacturing method of the IT 〇 sputtering target of the third application of the patent scope, wherein the ratio of the oxygen flow rate (L / mi η ) to the molded body input amount (kg) when oxygen is introduced into the furnace during sintering (input weight / oxygen flow rate) It is 1. 〇 below. (Please read the notes on the back and fill out this page again) Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -2 -