1250688 玫、發明說明： 【發明所屬之技術領域】 本發明係關於一種微波濾波器，詳言之，係關於一種高 混附波抑制之微波滤波器。 【先前技術】 隨著高頻時代的來臨，微波濾波器在通訊方面的應用逐 漸增加。不論是在行動電話、基地台、衛星系統…等，都 需要大量使用微波濾波器。然而，在該習用平面結構微波 濾波器之該，基本頻率（fG)之二倍頻（2fQ)、三倍頻（3fG)及四倍 頻（4f〇)等高頻處通常會出現第二、第三、第四個帶通頻率 之通帶，以及高頻混附效應。習用之解決方法係一低通（l〇w pass)遽波器、步階式阻抗（step impedance)濾波器或是以額 外之傳輸零點（transmission zero)以抑制該高頻混附效應。 另外，週期性結構（或稱光子能隙、或電磁能隙）所產生之 禁帶效應已被提出應用於微波元件，且習用之週期性結構 大多製作於接地面上，故具有不利於高頻封裝之缺點。然 而，若將週期性結構與微波元件設置於同平面，則對於原 有之微波元件會產生不良之影響（例如中心頻率偏移等）。 因此’有必要提供-種創新且具進步性的高混附波抑制 之微波濾波器，以解決上述問題。 【發明内容】 本發明之目的在於提供-種高混附波抑制之微波遽波 器，其包括：一第一金屬層及至少一第二金屬層。該第— 金属層用以滤波，該第-金屬層具有一第—基板及複數個BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave filter, and more particularly to a microwave filter with high mixed wave suppression. [Prior Art] With the advent of the high frequency era, the application of microwave filters in communication has gradually increased. Whether in mobile phones, base stations, satellite systems, etc., a large number of microwave filters are required. However, in the conventional planar structure microwave filter, the second frequency is usually present at a high frequency such as a second frequency (2fQ), a triple frequency (3fG), and a quadruple frequency (4f〇) of the fundamental frequency (fG). The passband of the third and fourth bandpass frequencies, as well as the high frequency mixing effect. A conventional solution is a low pass pass chopper, a step impedance filter or an additional transmission zero to suppress the high frequency aliasing effect. In addition, the bandgap effect generated by the periodic structure (or photon energy gap or electromagnetic energy gap) has been proposed for microwave components, and the conventional periodic structures are mostly fabricated on the ground plane, so it is disadvantageous to high frequency. The disadvantages of packaging. However, if the periodic structure and the microwave element are placed on the same plane, the original microwave element may be adversely affected (e.g., center frequency offset, etc.). Therefore, it is necessary to provide an innovative and progressive high-mixing wave suppression microwave filter to solve the above problems. SUMMARY OF THE INVENTION An object of the present invention is to provide a high frequency hybrid wave suppression microwave chopper comprising: a first metal layer and at least a second metal layer. The first metal layer is used for filtering, and the first metal layer has a first substrate and a plurality of
O:\91\9I492 DOC 1250688 微帶線’該等微帶線形成於該第一基板之一表面上。該第 一金屬層設置於該第一金屬層下，該第二金屬層具有一第 一基板及複數個週期性排列之結構’該等週期性排列之結 構係形成於該第二基板之一第一表面上。 本發明之微波濾波器係利用該第二金屬層之該等週期性 排列之結構以有效地抑制高頻混附波響應。另外，該等週 期性排列之結構設置於該第一金屬層之該第一基板及該第 二金屬層之該第二基板之間，且該第二金屬廣之一第二表 面具有一接地金屬板，因此，利用本發明之該微波濾波器 可克服習知技術高頻封裝接地面不足之問題。 【實施方式】 請參閱圖1，本發明之高混附波抑制之微波遽波器1 〇包 括：一第一金屬層11及一第二金屬層12。該第一金屬層11 用以濾波。該第一金屬層11具有一第一基板111及複數個微 帶線 112、11 3、114、115、116。該等微帶線 i i 2、u 3、i i 4、 11 5、11 6形成於該第一基板111之一表面上。該等微帶線 112、113、114、115、116係為平行耦合之微帶線，且該等 微帶線係包括一輸入微帶線112、三個耦合微帶線11 3、 114、115及一輸出微帶線116。因該第一金屬層11具有三個 耦合微帶線113、114、115，故本實施例中之該微波濾波器 10係為三階濾波器。該微波滤波器10之中心頻率為f〇。 該第二金屬層12設置於該第一金屬層11下，該第二金屬 層12具有一第二基板1 2 1、複數個週期性排列之結構122、 123、124及一接地金屬板128。該等週期性排列之結構122、 -6-O: \91\9I492 DOC 1250688 Microstrip line 'The microstrip lines are formed on one surface of the first substrate. The first metal layer is disposed under the first metal layer, and the second metal layer has a first substrate and a plurality of periodically arranged structures. The periodically arranged structures are formed on one of the second substrates. On the surface. The microwave filter of the present invention utilizes the periodically arranged structures of the second metal layer to effectively suppress the high frequency mixed wave response. In addition, the periodically arranged structure is disposed between the first substrate of the first metal layer and the second substrate of the second metal layer, and the second surface of the second metal has a grounded metal Therefore, the microwave filter of the present invention can overcome the problem of insufficient grounding surface of the high frequency package of the prior art. [Embodiment] Referring to Fig. 1, a high frequency-wave-suppressing microwave chopper 1 of the present invention includes a first metal layer 11 and a second metal layer 12. The first metal layer 11 is used for filtering. The first metal layer 11 has a first substrate 111 and a plurality of microstrip lines 112, 113, 114, 115, and 116. The microstrip lines i i 2, u 3, i i 4, 11 5, and 11 6 are formed on one surface of the first substrate 111. The microstrip lines 112, 113, 114, 115, and 116 are parallel coupled microstrip lines, and the microstrip lines include an input microstrip line 112 and three coupled microstrip lines 11 3, 114, and 115. And an output microstrip line 116. Since the first metal layer 11 has three coupled microstrip lines 113, 114, 115, the microwave filter 10 in this embodiment is a third-order filter. The center frequency of the microwave filter 10 is f〇. The second metal layer 12 is disposed under the first metal layer 11. The second metal layer 12 has a second substrate 112, a plurality of periodically arranged structures 122, 123, and 124 and a grounded metal plate 128. The periodically arranged structures 122, -6-
O:\91\91492.DOC 125〇688 1 2 4係开^成於該第二基板12 1之一第一表面上。 在本貝她例之该等週期性排列之結構1 22、工^ Μ係為 方开7中工封閉狀微帶線，但本發明之該等週期性排列之結 構之形狀不P&於方形中空封閉狀，亦可為環形中空封閉狀 、v、、泉一角开^中艺封閉狀微帶線、方形金屬片等形狀。 本實施例之該等方形中空封閉狀微帶線122、123、124具有 複數個第一尺寸方形中空封閉狀微帶線12 2、複數個第二尺 寸方形中芝封閉狀微帶線丨23及複數個第三尺寸方形中空 封閉狀微帶線124。該第-尺寸方形中空封閉狀微帶線122 大於該第二尺寸方形中空封閉狀微帶線123，該第二尺寸方 形中空封閉狀微帶線丨23大於該第三尺寸方形中空封閉狀 微帶線12 4。 該等方形中空封閉狀微帶線122、123、124係於該第二基 板121(第一表面上呈三列九行之矩陣式排列。並且，該第 二尺寸方形中空封閉狀微帶線123及該第三尺寸方形中空 封閉狀微帶線124交錯排列於第一列；該第一尺寸方形中空 封閉狀微帶線122及該第三尺寸方形中空封閉狀微帶線124 又錯排列於第二列；該第二尺寸方形中空封閉狀微帶線i 23 及該第三尺寸方形中空封閉狀微帶線124交錯排列於第三 列。 該等方形中空封閉狀微帶線丨22、123、124係用以抑制該 微波濾波器10其中心頻率（f〇)之二倍頻（2f〇)、三倍頻（3f〇) 及四倍頻（4f〇)之通帶。該第一尺寸方形中空封閉狀微帶線 122係用以抑制中心頻率之四倍頻（4f〇)之通帶；該第二尺寸O:\91\91492.DOC 125〇688 1 2 4 is formed on one of the first surfaces of the second substrate 12 1 . The periodically arranged structure 1 22 and the working system of the present invention are square open 7 medium-closed microstrip lines, but the shape of the periodically arranged structures of the present invention is not P& The hollow closed shape may also be a ring-shaped hollow closed shape, a v, a spring opening, a closed-loop micro-belt line, a square metal piece and the like. The square hollow closed microstrip lines 122, 123, and 124 of the present embodiment have a plurality of first-sized square hollow closed microstrip lines 12, and a plurality of second-sized square Zhongzhi closed microstrip lines 23 and A plurality of third-sized square hollow closed microstrip lines 124. The first-sized square hollow closed microstrip line 122 is larger than the second-sized square hollow closed microstrip line 123, and the second-sized square hollow closed microstrip line 丨23 is larger than the third-sized square hollow closed microstrip Line 12 4. The square hollow closed microstrip lines 122, 123, 124 are arranged on the second substrate 121 (the first surface is arranged in a matrix of three rows and nine rows. And, the second size square hollow closed microstrip line 123 And the third size square hollow closed microstrip line 124 is staggered in the first column; the first size square hollow closed microstrip line 122 and the third size square hollow closed microstrip line 124 are again arranged in the first row. a second row; the second size square hollow closed microstrip line i 23 and the third size square hollow closed microstrip line 124 are staggered in the third column. The square hollow closed microstrip lines 22, 123, 124 is a passband for suppressing the second frequency (2f〇), triple frequency (3f〇) and quadruple frequency (4f〇) of the center frequency (f〇) of the microwave filter 10. The first size square The hollow closed microstrip line 122 is used to suppress the passband of the fourth frequency (4f〇) of the center frequency; the second size
O:\91\9U92.DOC 1250688 方形中空封閉狀微帶線123係用以抑制中心頻率之三倍頻 (3 f〇)之通帶；該第三尺寸方形中空封閉狀微帶線1.24係用以 抑制中心頻率之二倍頻（2G)之通帶。 參考圖2,該第一金屬層11與該第二金屬層丨2結合以形成 該微波濾波器1 〇，並使得該等週期性排列之結構1 22、123、 124埋置於該第一金屬層Π之第一基板m及該第二金屬層 12之第二基板121之間。且該接地金屬板128係整面地形成 於該弟二金屬層12之一第一表面。因此，未發明之該微波 滤波器10可^解決習知技術鬲頻封裝時接地面不足之問題。 參考圖3及圖4，其分別顯示本發明之該微波濾波器丨〇之 頻率響應模擬及實際量測示意圖。該微波濾波器1〇之中心 頻率（f〇)為1.9GHz，該中心頻率之插入損（inserti〇n i〇⑻大 於-3dB。並且，該中心頻率之通帶之頻寬相當窄。 由於本發明之泫械波濾波器1 〇利用該等方形中空封閉狀 微帶線122、123、124以抑制高頻混附波響應。因此，由圖 34棱k及圖實測結果顯示’該微波遽波器i Q中心頻率 之二倍頻（2f〇=3.8GHz)、三倍頻（3f〇 = 5 7GHz)、四倍頻 (4f〇 = 7.6GHZ)及其更高倍頻等高頻⑨附波都被壓抑至·2(ΜΒ 以下，足證該微波漉波器1〇可有效地抑制其中心頻率之二 倍頻、三倍頻、四倍頻及其更高倍頻之通帶。 另外，本發明之該微波遽波器可依各種通訊規格，使用 不同«之基板（如FR_4、TeflGn、Α1Λ甚至是&基板等） 應用至罘一基板或第二基板，再依據該等週期性結構來調 所<抑制'禁帶頻率。通常影響禁帶頻率之因素有O:\91\9U92.DOC 1250688 The square hollow closed microstrip line 123 is used to suppress the triple frequency (3 f〇) pass band of the center frequency; the third size square hollow closed microstrip line 1.24 is used. To suppress the passband of the second frequency (2G) of the center frequency. Referring to FIG. 2, the first metal layer 11 is combined with the second metal layer 丨2 to form the microwave filter 1 〇, and the periodically arranged structures 1 22, 123, 124 are buried in the first metal. Between the first substrate m of the layer and the second substrate 121 of the second metal layer 12. And the grounded metal plate 128 is formed on the first surface of one of the two metal layers 12 over the entire surface. Therefore, the microwave filter 10 which is not invented can solve the problem of insufficient grounding surface in the conventional technology. Referring to Figures 3 and 4, there are shown schematic diagrams of frequency response simulation and actual measurement of the microwave filter of the present invention, respectively. The center frequency (f〇) of the microwave filter 1〇 is 1.9 GHz, and the insertion loss of the center frequency (inserti〇ni〇(8) is greater than -3 dB. Moreover, the bandwidth of the pass band of the center frequency is rather narrow. The mechanical wave filter 1 〇 utilizes the square hollow closed microstrip lines 122, 123, 124 to suppress the high frequency mixed wave response. Therefore, the ridge k of Fig. 34 and the measured results show that the microwave chopper The second frequency of the i Q center frequency (2f〇=3.8GHz), triple frequency (3f〇= 5 7GHz), quadruple frequency (4f〇= 7.6GHZ) and higher frequency multipliers are all high frequency 9 It is suppressed to 2 (ΜΒ), which proves that the microwave chopper 1〇 can effectively suppress the passband of the center frequency of the second frequency, the triple frequency, the quadruple frequency, and the higher frequency multiplication. Further, the present invention The microwave chopper can be applied to a first substrate or a second substrate according to various communication specifications, using different substrates (such as FR_4, TeflGn, Α1Λ or even & substrate, etc.), and then according to the periodic structure <Inhibition of the band gap frequency. Usually the factors affecting the band gap frequency are
O:\9I\9I492 DOC 1250688 晶胞間距（cell dlstance)及填充率（fillmg峨）等。晶胞間距 係為一万形中空封閉狀微帶線（即為一晶胞）之中心點至另 -万形中2封閉狀微帶線之中心點距離。填充率則為該方 形中空封閉狀微帶線之外圍面積與中空面積之比值。因 此，利用晶胞間距及填充率以調整該等方形中空封閉狀微 咿、’泉之开y狀或彼此間之距離，而能依據實際之所需彈性地 調整禁帶頻率。並且本發明之該微波濾波器結構係平面 式，可容易地整合於低溫共燒陶瓷元件、超導體元件與微 機電元件^ 再者，本發明之該等週期性排列之結構並不限於必須一 起設置於一個基板上，可將該等週期性排列之結構分設於 多個基板上，例如：用以抑制中心頻率之二倍頻（2f〇)之通 帶之該第三尺寸方形中空封閉狀微帶線124可設置於一基 板上’用以抑制中心頻率之三倍頻（3f〇)之通帶之該第二尺 寸方形中空封閉狀微帶線123可設置於另一基板上等，以將 抑制不同倍頻通帶之該等方形中空封閉狀微帶線分別設置 於不同基板，亦可達到抑制高頻混附波響應之效果。 惟上述實施例僅為說明本發明之原理及其功效，而非限 制本發明。因此，習於此技術之人士可在不達背本發明之 精神對上述實施例進行修改及變化。本發明之權利範圍應 如後述之申請專利範圍所列。 【圖式簡單說明】 圖1為本發明之微波濾波器之分解示意圖； 圖2為本發明之微波濾波器之結合示意圖；O:\9I\9I492 DOC 1250688 Cell dlstance and fill rate (fillmg峨). The cell spacing is the center point distance from the center point of the 10,000-shaped hollow closed microstrip line (ie, a unit cell) to the other 2 closed-shaped microstrip line. The filling rate is the ratio of the peripheral area to the hollow area of the square hollow closed microstrip line. Therefore, the cell pitch and the filling rate are used to adjust the square hollow closed micro 咿, the spring opening y or the distance between them, and the forbidden band frequency can be flexibly adjusted according to actual needs. Moreover, the microwave filter structure of the present invention is planar and can be easily integrated into a low temperature co-fired ceramic component, a superconductor component, and a microelectromechanical component. Further, the periodically arranged structures of the present invention are not limited to being necessarily set together. The periodically-arranged structures may be disposed on a plurality of substrates on a substrate, for example, the third-sized square hollow closed micro-passage for suppressing the passband of the second frequency (2f〇) of the center frequency. The strip line 124 can be disposed on a substrate. The second size square hollow closed microstrip line 123 for suppressing the passband of the center frequency of three times (3f〇) can be disposed on another substrate, etc., so as to be The square hollow closed microstrip lines for suppressing different frequency doubling pass bands are respectively disposed on different substrates, and the effect of suppressing the high frequency mixed wave response can also be achieved. However, the above-described embodiments are merely illustrative of the principles of the invention and its effects, and are not intended to limit the invention. Therefore, those skilled in the art can make modifications and changes to the above embodiments without departing from the spirit of the invention. The scope of the invention should be as set forth in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exploded perspective view of a microwave filter of the present invention; FIG. 2 is a schematic diagram of a combination of a microwave filter of the present invention;
O:\91\9I492.DOC 1250688 圖3為本發明之微波濾波器之頻率響應模擬示意圖；及 圖4為本發明之微波濾波器之頻率響應實際量測示意圖。 【圖式元件符號說明】 10 本發明之微波濾波器 11 第一金屬層 12 第二金屬層 111 第一基板 112 輸入微帶線 1 1 3、1 Γ4、11 5 耦合微帶線 116 輸出微帶線 121 弟二基板 122 第一尺寸方形中空封閉狀微帶線 123 第二尺寸方形中空封閉狀微帶線 124 第三尺寸方形中空封閉狀微帶線 128 接地金屬板 O:\9I\91492.DOC - 10 -O:\91\9I492.DOC 1250688 FIG. 3 is a schematic diagram of frequency response simulation of the microwave filter of the present invention; and FIG. 4 is a schematic diagram of actual frequency measurement of the microwave filter of the present invention. [Illustration of Symbols of Drawing Elements] 10 Microwave Filter 11 of the Invention First Metal Layer 12 Second Metal Layer 111 First Substrate 112 Input Microstrip Line 1 1 3, 1 Γ 4, 11 5 Coupled Microstrip Line 116 Output Microstrip Line 121 2nd substrate 122 First size square hollow closed microstrip line 123 Second size square hollow closed microstrip line 124 Third size square hollow closed microstrip line 128 Grounded metal plate O:\9I\91492.DOC - 10 -