1250673 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種應用於發光裝置中作為光反射用途 之反射板，以及包含反射板的發光二極體用殼體及該發光 二極體設計。 【先前技術】 發光二極體是目前已知具有高輝度、低耗電的發光物 件中之一種，由於該具有高輝度的發光二極體通電發光的 過程中’會產生高特別是近年來，以提高散熱性能進 而延長使用壽命為目的所開發設計出的發光二極體，其殼 體概是使用兩板片狀的氧化鋁陶瓷所製成的，該發光二極 體則係藉由該氧化鋁陶瓷製成板狀的基體與反射板黏結一 體後，在該基體表面貼設發光元件，在反射板約略中間處 形成西面狀反射面的開口形狀。 近年來，由於藍光發光二極體的開發有所進展的同時 ，在半導體基板製造方面，紫外線發光二極體的使用也受 到關注。基於w述的發展情勢，使氧化鋁陶瓷為原材料的 發光二極體，愈發需要具有更高的輝度。故此，為了實現 發光二極體的高輝度化，除對發光元件本身的發光效能的 提昇外'，對於如何提高發光二極體中之反射面反射率也是 重要的研發項目之一。 針對前述使用氧化鋁陶瓷製成的發光二極體，因為該 氧化鋁陶瓷自身的反射率低，必須在其反射面上另外貼裝 南反射率的反射板，才能實現發光二極體的高輝度化，而 1250673 弋「^成。亥發光二極體的生產需要花費大量的勞力 、時間和成本。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflector for use in a light-reflecting application in a light-emitting device, and a casing for a light-emitting diode including a reflector and the design of the light-emitting diode . [Prior Art] The light-emitting diode is one of the light-emitting objects known to have high luminance and low power consumption, and the high-luminance light-emitting diode is generated during the process of light-emitting, which is particularly high in recent years. The light-emitting diode designed and developed for the purpose of improving heat dissipation performance and prolonging the service life is mainly made of a two-plate alumina ceramic, and the light-emitting diode is oxidized by the oxidation diode. After the plate-shaped base body made of aluminum ceramic is bonded and integrated with the reflecting plate, a light-emitting element is attached to the surface of the substrate, and an opening shape of the west-surface reflecting surface is formed at a substantially intermediate portion of the reflecting plate. In recent years, as the development of blue light-emitting diodes has progressed, the use of ultraviolet light-emitting diodes has also received attention in the manufacture of semiconductor substrates. Based on the development situation described above, the light-emitting diodes in which alumina ceramics are used as raw materials are increasingly required to have higher luminance. Therefore, in order to achieve high luminance of the light-emitting diode, in addition to the improvement of the light-emitting efficiency of the light-emitting element itself, it is one of the important research and development projects on how to improve the reflectance of the reflective surface in the light-emitting diode. In view of the foregoing light-emitting diode made of alumina ceramic, since the alumina ceramic itself has a low reflectance, it is necessary to additionally mount a south reflectance reflecting plate on the reflecting surface thereof to achieve high luminance of the light-emitting diode. And 1250673 弋 "^成. The production of the light-emitting diode requires a lot of labor, time and cost.
七據已知研究中發現，雖然前述之氧化銘陶究是經過一 疋狐度k、、、口而《’但通過燒結溫度和原料形態的變化，該 陶瓷的軋孔直徑、氣孔率隨之變化，&射率也相應大幅度 ‘生义化田氧化鋁陶瓷的氣孔直徑、氣孔率在一定範圍 内寸”目刖的氧化鋁陶瓷相比，實用上可以得到足夠滿 意的反射效果’據此，纟案發明人們即依循此—技術手段 致力研究改善前述陶兗反射板之光反射率不高，以及具有 該反射板的發光：極體用殼體及該發光：極體須於反射面 附加其他高光反射率物件之高成本問題。 【發明内容】 本發明之主要目的在於提供一種反射板、包含反射板 的發光二極體用殼體及該發光二極體，希藉此設計，使其 改善该反射板之光反射率偏低之問題。 為達成前揭目的，本發明提出之技術方案主要係令該 使用氧化鋁陶瓷燒結成的反射板控制其氣孔直徑介於〇1〇 //m〜1.25/zm範圍，或令其氣孔率於1〇%〜6〇%的範圍， 用以提咼該反射板表面的反射率，該反射板於其中形成開 口，再可結合於基體上作為發光二極體用殼體，或進一步 於邊叙體中相對於反射板内的開口中裝設發光元件製成一 發光二極體。 本發明藉由前揭技術方案設計，其主要係透過該氧化 鋁陶瓷適當地控制其氣孔直徑範圍，或氣孔分佈率於一定 6 1250673 範圍，使該氣化紹陶£燒結成的反射板之多氣孔表面在此 特定的條件上，可以有效地提升其表面對光漫反射的反射 率’與先前技術相較，本發明可令該反射板在不附加立它 高反射率物件增加成本之情形下，可以有效提高其自身的 反射率，並於該反射板應用於發光二極體或其殼體中，可 藉其高反射率，提昇該發光二極體的發光輝度。 【實施方式】 本發明所提出之技術·方案包括有反射板、包含該反射 板的1¾光一極體用设體以及該發光二極體，其中： 該反射板是使用氧化鋁陶瓷材料燒結而成的物件，其 至少一表面具有光反射功能的反射面。 如第一圖所示，該包含反射板的發光二極體用殼體（ 1 )係包括二塊成矩形板狀的基體（2 )及反射板（3 ) ’其中至少該反射板（3 )使用氧化鋁陶瓷材料燒結而成 ’該反射板（3 )是貼合於基體（2 )的上表面，其中央 • 並形成由外朝内呈直徑漸縮的圓錐狀開口 （ 3 1 )，以該 圓錐狀開口 （ 3 1 )的内表面作為反射面（3 2 )，使該 反射板（3 )具有光反射之功能。 如第二圖A〜B所示，該包含反射板的發光二極體主要 包括前述殼體（1 )以及至少一發光元件（4 )，該發光 元件並固設於基體（2 )上表面上位於反射板（3 )之圓 錐狀開口 （ 3 1 )中，該發光元件（4 )的電連接端（圖 未示）並伸出殼體（1 )外側，用以外接電源。 以下分別就前述技術方案之具體實施設計進一步提出 7 1250673 說明，其中： 該反射板是使用氧化紹陶莞材料燒結而成，且中透過 改變燒結前原料形態、調整燒結時的溫度或於原料内摻雜 有機物貝等手&，使其燒結後的氣孔直彳m孔率控制在 -^的範圍内’其中氣孔直徑是控制在〇.ι〇_〜ΐ 25^ 之範圍内’或控制其氣孔率介於1〇%〜6〇%之範圍為較佳， 使該反射板表面可以A幅提昇其光反射率，當其應用於發 光二極體用殼體或發光二極體中即可透過良好的光反射率 提局其發光輝度。 再就氧化銘陶-充的氣孔直徑、氣孔率與反射率的關係 進一步提出說明： 本：明所指的氧化鋁陶-充’係指氧化鋁(A12〇3)含量為 30%(重里比）以上的陶变材料，另為證明本發明所提出之 ㈣方案確實可行’即試作多項樣品，並加以測定其構造 肖'一、反射率’其中，按照氧化鋁陶瓷燒結前的原料形態 和燒結％的燒結溫度的不同’共製成了 21種樣品，測定 了各種樣品的氣孔直徑和氣孔率，以及每種樣品對各種波 長的反射率。 刖述的樣品中’ 1號、2號和3號樣品是由直徑} 〇 " 的球狀氧Μ分別纟12_、13δ(Γ„σ刚。㈠堯結而成 ;4號、5號和6號樣品是由直徑4〇^的球狀氧化銘分 別在120(TC、138(rc和1 492t燒結而成；7號、δ號和9 Μ品是由氧化在呂重量比達96%的原料分別在測^、 1 380 C和1 492°C燒結而成；1 〇號、}}號和】2號樣品是由 8 1250673 、氧化鋁重置比達99. 7%的原料分別在120(TC、1 380°C和 -1 492 C燒結而成’其他樣品則係對應其不同的原料形態和 燒結酿度燒結而成，前述之9號樣品就是一般普及使用的 氧化鋁陶瓷。 曰本&明所測疋的反射率並非通常所說的鏡面反射，而 、曰又反射的反射率。該反射率是使用漫反射測定原理， 、'使用日本島津製作所研製的分光光度計、肌― 魯3m測定而得。各樣品的測定結果如表！所示。 表1可知’ 5亥9號樣品代表的是-般常用的氧化鋁 司曼，其氣孔直經為π η 9 -.,nn t為〇.〇2#m、氣孔率為3.92%，其對波 長30〇nm光的反射率為 85%以下。 對波長35〇nm光的反射率為 依據表1所示的測定纟士 盘反n $ Μ Μ 、 ° :對應各波長的氣孔直徑 〃反射率的關係作成圖表，如 ^ 一 將對應各波長的氣孔率鱼 θ〜弟七圖所不。同樣 圖〜第十1所 只反射率的關係作成圖表，如第八 弟十—圖所不。以7號、 ，將& I q占丄士 泥 9號樣品作為代表例 將波長與反射率的關係圖表化 巧代表例 樣，將9號、1 ? %接 弟十二圖所示）。同 .卜 说樣品對應的波長與反 (如第十四圖所示）。 、、、◊闕係圖表化 是以定義硫酸鋇的反射皇、^月的樣品反射率測定值， 貝的反射率視為〗00¾，s , 品反射率測定的數值會有超過_的’在本發明的樣 q百先，由第三圖〜第七圖所示的對痛“ I與反射率的關係可以看 -各波長的氣孔直 徑在〇 7 " m< 士 厅有的波長而言，名π古 仕Uum附近時的反射率達到峰值。 。風孔苴 1250673 對屬於紫外線範圍的3^nnm 、士且工 图扪J50nm波長而言，由第四圖所示 j:孔直徑與反射率的關係可以看出，氧化崎的氣孔 ::ο.10》1.25…夺，反射率均可超過通常氧化 銘陶竞的反射率水準85%，氣 日士仁h七 孔孔直徑在〇.17/zm〜i.20/zm ~，反射率超過90%，特別 行W疋乳孔直徑在〇·34//ιη〜1.〇8 V m時，其反射率可超 〇 Qn ，而乳孔直徑在0.60/ζηι〜 •80"m時，反射率接近峰值。 進一步分析得知，氧仆奴$ 斤 〜 虱化鋁陶瓷的氣孔直徑在0.10//m 丄·Ζ5//πι之範圍時，斟A Qr;n 率m 了對於35〇nm以上的波長來說，反射 可達到8 5 %以上，而即使對 可赶迅fiRQ/ ^ 吏對衣300⑽的波長，反射率也 過65%。簡十夕，去与^According to the known research, it is found that although the above-mentioned oxidation of the ceramics is through a fox, k, and mouth, "but through the change of sintering temperature and raw material morphology, the ceramic rolling hole diameter and porosity change accordingly. , & the rate of radiation is also correspondingly large 'the raw material diameter of the alumina ceramics, the porosity of the alumina ceramics in a certain range of inches" compared to the alumina ceramics, the practically satisfactory reflection effect can be obtained. The inventor of the case follows this - the technical means to study to improve the light reflectivity of the ceramic plate reflector is not high, and the light having the reflector: the shell for the polar body and the light: the polar body must be attached to the reflective surface The present invention provides a reflector, a housing for a light-emitting diode including a reflector, and the light-emitting diode. The problem that the light reflectance of the reflector is low is improved. In order to achieve the foregoing object, the technical proposal proposed by the present invention mainly controls the reflector made of alumina ceramic sintered. The pore diameter is in the range of 〇1〇//m~1.25/zm, or the porosity thereof is in the range of 1%~6〇%, for improving the reflectivity of the surface of the reflector, and the reflector is formed therein. The opening can be combined with the substrate as a casing for the light-emitting diode, or further, a light-emitting diode is disposed in the opening in the edge of the reflector relative to the opening in the reflector to form a light-emitting diode. The technical design is mainly to control the pore diameter range through the alumina ceramic, or the pore distribution rate is in the range of 6 1250673, so that the gasified surface of the vaporized glass is sintered in this specific pore surface. In principle, the reflectance of the surface to the diffuse reflection of the light can be effectively improved. Compared with the prior art, the present invention can effectively improve the reflector without increasing the cost of the object with high reflectivity. The reflectivity of the reflector is applied to the light-emitting diode or its casing, and the luminance of the light-emitting diode can be improved by the high reflectivity. [Embodiment] The technology and solution proposed by the present invention package a reflecting plate, a 13⁄4 light-emitting body comprising the reflecting plate, and the light-emitting diode, wherein: the reflecting plate is an object sintered by using an alumina ceramic material, and at least one surface thereof has a light reflecting function reflection As shown in the first figure, the housing (1) for a light-emitting diode including a reflector comprises two bases (2) and a reflector (3) in which a rectangular plate is formed, at least the reflector ( 3) Sintered using an alumina ceramic material. The reflector (3) is attached to the upper surface of the substrate (2), and has a central opening and a conical opening (3 1 ) which is tapered from the outside toward the inside. The inner surface of the conical opening (31) serves as a reflecting surface (3 2 ), so that the reflecting plate (3) has a function of light reflection. As shown in the second figures A to B, the light containing the reflecting plate The diode body mainly includes the foregoing housing (1) and at least one light-emitting element (4), and the light-emitting element is fixed on the upper surface of the base body (2) in a conical opening (31) of the reflecting plate (3), An electrical connection end (not shown) of the light-emitting element (4) extends out of the housing ( 1) Outside, use an external power supply. In the following, the specific implementation design of the foregoing technical solution is further provided with a description of 7 1250673, wherein: the reflector is sintered by using oxidized Shaoguanwan material, and the medium is changed by changing the shape of the raw material before sintering, adjusting the temperature during sintering or in the raw material. Doping the organic matter shell and the like, and controlling the porosity of the pores after sintering to be controlled within the range of -^ where the pore diameter is controlled within the range of 〇.ι〇_~ΐ 25^' or controlling It is preferable that the porosity is in the range of 1% to 6〇%, so that the surface of the reflector can be increased in light transmittance by A, and when it is applied to a casing or a light-emitting diode for a light-emitting diode. The luminosity is improved by good light reflectivity. Further, the relationship between the pore diameter, the porosity and the reflectance of the oxidized Mingtao-filling is further explained: Ben: The alumina ceramic-filled by the Ming refers to the content of alumina (A12〇3) of 30% (weight ratio) The above ceramic change material, in order to prove that the (4) scheme proposed by the present invention is indeed feasible, that is, a plurality of samples are tried, and the structure thereof is measured, and the reflectance is determined, according to the raw material form and sintering before the alumina ceramics are sintered. A difference of % sintering temperatures was made. A total of 21 samples were prepared, and the pore diameter and porosity of each sample were measured, as well as the reflectance of each sample for various wavelengths. In the sample described, 'No. 1, No. 2 and No. 3 samples are made of diameter} 〇" globular oxime 纟12_, 13δ (Γ„σ刚. (一)尧结结; 4, 5 and Sample No. 6 is made up of spherical oxidized in diameters of 4 〇 ^ at 120 (TC, 138 (rc and 1 492t sintered; No. 7, δ and 9 Μ are oxidized at a weight ratio of 96%) The raw materials were sintered at the test, 1 380 C and 1 492 °C; 1 〇, }, and 2 samples were made up of 8 1250673, and the alumina replacement ratio was 99.7%. (TC, 1 380 ° C and -1 492 C sintered 'other samples are sintered according to their different raw material form and sintering degree. The above sample No. 9 is a commonly used alumina ceramic. & The measured reflectance of the 疋 is not the so-called specular reflection, but the reflectivity of the 曰 and the reflection. This reflectance is based on the principle of diffuse reflectance measurement, 'using the spectrophotometer developed by Shimadzu Corporation of Japan, muscle ― The measurement results of each sample are shown in Table! Table 1. It can be seen that the sample 5 Hai 9 represents the commonly used alumina Siman, its gas The hole straight is π η 9 -., nn t is 〇.〇2#m, the porosity is 3.92%, and its reflectance for light with a wavelength of 30〇nm is 85% or less. Reflectance of light with a wavelength of 35〇nm According to the measurement shown in Table 1, the gentleman disk counter n $ Μ 、 , ° : corresponding to the relationship between the pore diameter 〃 reflectivity of each wavelength, such as ^ will correspond to the porosity of each wavelength fish θ ~ 弟七图No. The relationship between the reflectivity of the same figure and the tenth one is made into a graph, such as the eighth brother, the tenth figure is not. With the No. 7, the & I q accounted for the sample of the gentleman mud No. 9 as a representative example of the wavelength and The relationship between reflectivity and graphs is representative of the example, which will be shown in Figure 12 of the 9th and 1st %. The same wavelength and inverse of the sample (as shown in Figure 14). The lanthanide chart is a measured value of the reflectance of the reflection of the barium sulfate, and the reflectance of the shell is regarded as 〖 003⁄4, s, and the value measured by the reflectance of the product may exceed _' in the present invention. The sample q hundred first, from the third figure ~ the seventh figure shows the relationship between the pain and the reflectivity I can see - the pore diameter of each wavelength is 〇7 "m< In the wavelength of the Hall, the reflectivity of the name near the Uum is the peak. The wind hole 苴1250673 is for the 3^nnm, the gong and the J50nm wavelength in the ultraviolet range. Show j: the relationship between the diameter of the hole and the reflectivity can be seen, the pores of the osmium oxide:: ο.10 "1.25..., the reflectivity can exceed 85% of the reflectance level of the usual oxidized Ming Tao Jing, Qi Ri Shiren h The diameter of the seven-hole is 〇.17/zm~i.20/zm~, and the reflectance is over 90%. Especially when the diameter of the breast hole is 〇·34//ιη~1.〇8 V m, the reflectance It can exceed Qn, and the reflectance is close to the peak when the diameter of the milk hole is 0.60/ζηι to •80"m. Further analysis revealed that the pore diameter of the oxygen servant is less than 0.10 / / m 丄 · Ζ 5 / / πι, 斟 A Qr; n rate m for wavelengths above 35 〇 nm , the reflection can reach more than 8 5 %, and even for the wavelength of the rushable fiRQ / ^ 吏 pair 300 (10), the reflectivity is over 65%. Jane Ii, go with ^
士。之w乳化銘陶竟的氣孔直徑在（MM ^ · 2 5 // m時，在可貝本念斤岡七士 即祐μ 乾圍内表現出非常高的反射率， 在i外線範圍也有較高的反射率。 -般=;銘陶£的氣孔直徑在〇.10㈣〜時，與 二：氧化銘陶究相比’其反射率可以大幅提 Q8尤的乳孔直從在 ^ m、0·60㈣〜〇.80㈣等範圍時，1反射率呈 現逐級提升的狀態。 /、反射羊呈 次，由第八圖〜第十二圖所示的對應各波長的氣孔 率與反射率的關係可以看出，對 ：波長的範孔 40%〜50%mn± 才所有波長而吕，氣孔率在 以附近時的反射率達到峰值。 對於屬紫外線範圍,"5〇nm 的氣孔率盥；5鉍方l 田弟九圖所不 ，…的關係可以看出，氧化紹陶究的氣孔韋 在10%以上時，sj尤的虱孔率 率均可超過通常氧化㉟陶Ή反射率 10 !25〇673 水準85%。氣孔率在20%以上時，反射率超過90%，特別是 氣孔率在35%以上時，反射率可超過95%，而氣孔率在4〇% 以上時，反射率接近峰值。 進而分析得知，氧化鋁陶瓷的氣孔率在1 0%以上時， 對於35Onm以上的波長來說，反射率可達85%以上，而即 使對方；3 0 0nm的波長，反射率也可以超過6 5%。簡言之， 當氧化鋁陶瓷的氣孔率在1 〇%以上時，在可見光範圍内表 現出非常高的反射率，即使在紫外線範圍也有較高的反射 率。 當氧化Is陶瓷的氣孔率在1 〇%以上時，與通常氧化鋁 陶究相比’其反射率可以大幅提高，而且，當氧化鋁陶瓷 的氣孔率在20%以上、35%以上、40%以上等範圍時，其反 射率呈現逐級提升的狀態。 需要指出的是，當氣孔率超過6〇%時，反射率會下降 ，而且氣孔率過高時，氧化鋁陶瓷本身的強度下降導致實 鲁用上出現問題。因此，在確保該氧化鋁陶瓷於實用上必要 的強度的前提下，氣孔率只要超過丨〇%，就能得到十分高 的反射率，故此，本發明氧化鋁陶瓷的氣孔率設定於 10%〜60%為較佳實施例。 如第十三圖所不的波長與反射率的關係可以看出9號 樣品的氣孔直徑為0·02//πι，不在〇1〇//m〜125//m的範 圍，其氣孔率為3. 92%，也不在1 〇%以上的範圍内，其對 任何波長的反射率均在9 0 %以下，而且，對紫外線範圍接 近上限40 0nm附近的短波的反射率下降，對3〇〇nm波長的 1250673 反射率下降至60%。與之相對照，7號和8號樣品的氣孔 直^處在0.10//m〜125/zm的範圍，氣孔率也在1⑽以上 2範圍，其對紫外線範圍325nm以上波長的反射率達到極 门的90/β以上，而且對於3〇〇咖波的反射率也達到以 上的兩值。 徑在0.10//111〜1.25/^111的範圍 時’氧化铭陶究的反射率可以 當氧化鋁陶瓷的氣孔直 ，或其氣孔率介於1〇%以上 大幅提高。Shi. The diameter of the pores of the emulsified Ming Tao actually showed a very high reflectivity in the MM ^ · 2 5 // m, and it also showed a very high reflectivity in the outer circumference of the 贝 本 念 七 , , , , High reflectivity. - General =; Ming Tao £'s pore diameter in 〇.10 (four) ~, compared with two: oxidation Ming ceramics 'the reflectivity can greatly improve the Q8 especially the milk hole straight from ^ m, 0 · In the range of 60 (four) ~ 〇. 80 (four), the reflectance of 1 is gradually increased. /, the reflection of sheep is secondary, and the relationship between the porosity and the reflectance of each wavelength shown in the eighth to twelfth graphs It can be seen that for: the wavelength of the pores 40% ~ 50% mn ± only all wavelengths, the porosity of the pores in the vicinity of the reflectance peak. For the ultraviolet range, " 5 〇 nm porosity 盥; 5铋方 l Tiandi Nine Diagrams does not, ... the relationship can be seen, when the oxidized Shao ceramics pores in more than 10%, sj especially the pupil rate can exceed the normal oxidation of 35 pottery reflectance 10! 25〇673 level 85%. When the porosity is above 20%, the reflectivity exceeds 90%, especially when the porosity is above 35%, the reflectivity can exceed 95%. When the porosity is 4% or more, the reflectance is close to the peak. Further, it is found that when the porosity of the alumina ceramic is 10% or more, the reflectance can be more than 85% for a wavelength of 35 Onm or more, and even The other side; the wavelength of 300 nm, the reflectance can also exceed 6 5%. In short, when the porosity of alumina ceramics is above 1 〇%, it exhibits a very high reflectance in the visible range, even in the ultraviolet The range also has a high reflectance. When the porosity of the oxidized Is ceramic is more than 1%, the reflectance can be greatly improved compared with the conventional alumina ceramics, and when the porosity of the alumina ceramic is 20%. When the above range is more than 35%, 40% or more, the reflectance is gradually increased. It should be noted that when the porosity exceeds 6〇%, the reflectance decreases, and when the porosity is too high, oxidation occurs. The decrease in the strength of the aluminum ceramic itself causes problems in the use of the solid. Therefore, under the premise of ensuring the practically necessary strength of the alumina ceramic, if the porosity is more than 丨〇%, a very high reflectance can be obtained. The porosity of the alumina ceramic of the present invention is set to 10% to 60% as a preferred embodiment. As shown in the relationship between the wavelength and the reflectance of the thirteenth image, it can be seen that the pore diameter of the sample No. 9 is 0·02/ /πι, in the range of 〇1〇//m~125//m, the porosity is 3.92%, and is not in the range of 1% or more, and the reflectance for any wavelength is below 90%. Moreover, the reflectance of the short-wave near the upper limit of the ultraviolet range of 40 nm is lowered, and the reflectance of the 1250673 of the wavelength of 3〇〇nm is lowered to 60%. In contrast, the pores of the samples No. 7 and No. 8 are at right In the range of 0.10/m to 125/zm, the porosity is also in the range of 1 (10) or more, and the reflectance to the wavelength of 325 nm or higher in the ultraviolet range is 90/β or more of the gate, and the reflectance for the 3 〇〇 coffee wave is also Reach the above two values. When the diameter is in the range of 0.10//111 to 1.25/^111, the reflectance of the oxidized crystal can be greatly increased when the pores of the alumina ceramic are straight or the porosity thereof is more than 1%.
7唬、8唬和9號樣品的原料中的氧化鋁重量比為96% ，燒結溫度分別為KOOt：、1 380 1和1 492 1，比一般常 用的陶瓷燒結溫度&，而且原料的組成、添加劑等沒有任 :、文化，使用通常的燒結爐製造而成，因而可以在不增加 製造成本的情況下，提高氧化鋁陶瓷的反射率。 如第十四圖所示的波長與反射率的關係可以看出，氧 化鋁陶瓷的純度為96%的9號樣品的氣孔直徑$ 〇· 〇2 "见 不在〜1.25/ζπι的範圍，其氣孔率為3 92%，也 不在1 〇%以上的範圍内，其對任何波長的反射率均在g0% 、下而且對糸外線範圍接近上限的40 0nm附近的短波 的反射率下降，對3〇〇nm波長的反射率下降至6〇%。與之 ^ 氧化鋁陶瓷的純度為99· 7%的1 2號樣品的氣孔直 為处在〜的範圍，氣孔率也在10%〜60% 的範圍，其對紫外線範圍的 極南的9 0 %以上，而且對於 325nm以上波長的反射率達到 30 0nm波的反射率也達到70% 以上的1¾值。 12 1250673 將9號和1 2號樣品比較可知，二者只是原料中氧化鋁 2重量比率96%和99. 7%的不同，僅是氧化鋁陶究的純度 增大，沒有加入任何添加劑，並使用一般的燒結爐燒結而 成，因而可以在僅增加氧化鋁陶瓷純度的情況下，透過氣 孔率的控制，提高氧化叙陶瓷的反射率。 如上所述，一般常用的氧化鋁陶瓷的氣孔直徑為〇· ι〇 “以下’氣孔率纟1〇%以下，因而對各波長的反射率在 9〇^以下，而當氧化鋁陶究的氣孔直徑為0.10/^〜1.25/z m耗圍，或氣孔率纟1Q%以上的範圍時，氧化㈣究自身 的反射率比通常的氧化鋁陶瓷有大幅提高。 口此⑤孔直控為〇· 1〇// m〜κ 25以m範圍或氣孔率在 1〇%〜⑽的氧化紹陶以作各種光源的反射板#，可提高 其反射效率，用作於發光二極體之殼體兼作反射板時，發 光一極體的輝度得以提高。特別是對於波長短的藍色發光 二極體及發射势々卜忠p ’、先的兔光二極體而言，效果尤為顯著。 而且’僅通過改變在纟士、、㈤ 又k、、、口 /皿度就能使氧化鋁陶瓷的氣孔 直徑處於0. 1〇 “ 1 _ Α μ闽 · 25 v m乾圍，或氣孔率提高至10%以 上的卓巳圍，因而反射率 古 士 製造成本的增加。 -的同…不會導致氧化銘陶兗 【圖式簡單說明】 :一二：、本^明中發光二極體用殼體的剖面示意。 弟一θ Α~β係為本發明中發光二極體的立體示意圖及 剖視圖。 # θ為本餐明武作樣品對應波長__的氣孔直徑 13 1250673 #與反射率的關係曲線圖。 苐四圖為本發明 M "乍樣品對應波長350nm的氣孔直徑 ”與反射率的關係曲線圖。 弟五圖為本發明續你4至 4 忒作樣品對應波長400⑽的氣扎直徑 〜與反射率的關係曲線圖。 弟/、圖為本發明每 盘反射^ 對應波長500顔的氣孔直徑 ” 〃、反射率的關係曲線圖。The weight ratio of alumina in the raw materials of samples 7唬, 8唬 and 9 was 96%, and the sintering temperatures were KOOt: 1,380 1 and 1 492 1, respectively, compared with the commonly used ceramic sintering temperature & There is no such thing as an additive or a culture, and it is manufactured using a normal sintering furnace, so that the reflectance of the alumina ceramic can be improved without increasing the manufacturing cost. As shown in the relationship between the wavelength and the reflectance shown in Fig. 14, it can be seen that the pore diameter of the sample No. 9 of the purity of the alumina ceramic is 96% 〇· 〇2 " see the range not in the range of 1.25/ζπι, The porosity is 392%, and is not in the range of 1% or more. The reflectance of any wavelength is lower at g0%, and the reflectance of short-wave near 40 0 nm near the upper limit of the outer-line range is decreased. The reflectance at the 〇〇nm wavelength is reduced to 6〇%. With the purity of the alumina ceramics of 99.7%, the pores of the No. 1 sample are in the range of ~, and the porosity is also in the range of 10% to 60%, which is 9 0 to the extreme range of the ultraviolet range. Above %, and the reflectance of the wavelength of 325 nm or more reaches 30 0 nm, and the reflectance of 70% or more also reaches a value of more than 70%. 12 1250673 Comparing the samples No. 9 and No. 12, the difference between the two is only the weight ratio of alumina 2 in the raw material 96% and 99.7%, only the purity of the alumina ceramics is increased, without adding any additives, and It is sintered by a general sintering furnace, so that the reflectivity of the oxidized ceramic can be improved by controlling the porosity by increasing the purity of the alumina ceramic. As described above, the commonly used alumina ceramics have a pore diameter of 〇· ι〇 "the following" porosity of 纟1〇% or less, and thus the reflectance for each wavelength is below 9 〇 ^, and when the alumina is stomata When the diameter is 0.10/^~1.25/zm, or the porosity is 纟1Q% or more, the reflectivity of the oxidation (4) is much higher than that of the conventional alumina ceramic. The 5-hole direct control is 〇·1 〇// m~κ 25 in the range of m or porosity of 1〇%~(10) of oxidized Shaotao as a reflector for various light sources #, can improve its reflection efficiency, used as a shell for the light-emitting diode as a reflection When the board is used, the luminance of the light-emitting body is improved, especially for the short-wavelength blue light-emitting diode and the emission potential, the first light-emitting diode, and the effect is particularly remarkable. Change in the gentleman, (5) and k,,, mouth / dish degree can make the alumina ceramic pore diameter at 0. 1 〇 " 1 _ Α μ闽 · 25 vm dry circumference, or increase the porosity to 10% or more The Zhuo Yuwei, and thus the reflectivity of the Guru's manufacturing costs increased. - The same ... will not lead to oxidation Ming Tao 兖 [Simple description of the diagram]: One: Two, the outline of the housing for the light-emitting diode in this ^ Ming. The brother-theta Α~β is a three-dimensional schematic view and a cross-sectional view of the light-emitting diode of the present invention. # θ is the graph of the relationship between the reflectance and the reflectance of the sample of the martial arts sample corresponding to the wavelength __ 13 1250673 #. The fourth figure is a graph of the relationship between the pore diameter of the M "乍 sample corresponding to the wavelength of 350 nm and the reflectance of the present invention. The fifth figure of the present invention is the fourth to fourth sample of the invention, and the sample diameter corresponding to the wavelength 400 (10) is ~ and reflected. The graph of the relationship between the rate and the reflectivity of the disk corresponding to the wavelength of 500 pixels of the present invention.
弟七圖為本發明試作樣 與反射率的才二波長600龍的軋孔直徑 斤 丰勺關係曲線圖。 第八圖為本發明試作 反射I 7 口口子應波長300nm的氣孔率與 斤反射率的關係曲線圖。 弟九圖為本發明4 ^月武作樣品對庫 及鼾至aa日日 皮長350nm的氣孔率盥 —反射率的關係曲線圖。 ” 弟十圖為本發明試作樣 反射率Μ μ / 對I疚長4UUnm的氣孔率盥 反射羊的關係曲線圖。 千/、 第十-圖為本發明試作 盥及射、日日 丁^波長500nm的氣孔率 ^ '、反射率的關係曲線圖。 丰 弟十一圖為本發明每你4笨 ^ °乍樣品對應波長60〇nm的氣孔# 斤與反射率的關係曲線圖。 ^孔羊 弟十二圖為本發明Ή、/Λ： 月4作樣品波長盥 圖。 一反射率的關係曲線 第十四圖為本發明試作 圖。 7 π〇波長與反射率的關係曲線 附件： 1250673The seventh figure is the relationship between the test sample of the invention and the reflectivity of the diameter of the two-wavelength 600 dragon. The eighth figure is a graph showing the relationship between the porosity and the reflectance of the pulse of 300 nm at the mouth of the test I 7 port. The figure of the nine figures is a graph showing the relationship between the porosity and the reflectivity of the sample of the invention for 4 months. The tenth figure is the relationship between the experimental sample reflectance Μ μ / the porosity of the I疚4UUnm and the reflectance of the sheep. The thousandth and the tenth-graphs are the trials of the invention, the shots, and the daily wavelengths. The relationship between the porosity of 500 nm ^ ' and the reflectivity. The image of Feng Di 11 is the graph of the relationship between the pore size and the reflectivity of the 60 〇nm wavelength of each of your 4 stupid samples. Twelve diagrams of the present invention are the 盥, /Λ: sample wavelength map of the month 4. The relationship between the reflectance curve and the fourteenth figure is the trial drawing of the present invention. 7 π 〇 wavelength and reflectance curve attached: 1250673
表1係本發明各項試作樣品的測定記錄表。 【主要元件符號說明】 (1 )發光二極用殼體 (2 )基體 （3 )反射板 (3 1 )開口 （ 3 2 )反射面 (4 )發光元件 15Table 1 is a measurement record table of each test sample of the present invention. [Description of main component symbols] (1) Housing for light-emitting diode (2) Base (3) Reflector (3 1 ) Opening (3 2 ) Reflecting surface (4) Light-emitting element 15