1249860 九、發明說明： 【發明所屬之技術領域】 特別有關於梯形半導體 本發明係有關於一種發光裝置及其製作方法 晶片及其製作方法。 【先前技術】 體晶片之發光面上附著 受籃光激發所發出之黃 目前市面上銷售之白光二極體，係於藍光二極 一發光層，當藍光二極體發出藍光時，將與發光層 光混合形成白光。 【發明内容】 本盔明目的在於提供一種發光裝置，包括一發光 面及鄰接該發光面之各側面，其中至少—第_側面與^光面H 弟-夾角，該第-夾角大於90度且小於⑽度，該發光半 ^ 導ΪΪί面Ϊ射出一具有第一波長的光線;及一發光層，係覆蓋該;:半 導體日日片u面及該發絲，該發光層受 而放射出-具衫二波長的級。 而具^第-《的光線為藍光該具有第二波長的光線為黃光。 本發明之目的在於提供另—錄錄置包括：—發. 主發光面及鄰接該主發光面之各側面，其中至少 :曰曰，具 光面形成—第—夾角，該第_側面具有―第—=、該主發 放射出-具有帛—波長的m體r發絲料—漏光部 發光面，該發光層受該具有第一波長=:、、;:::該第-漏光部及該主 的光線。 _先線激㉝而放射出-具有第二波長 其中之較佳實施例為，發光丰導，曰 小於180度。 牛導—曰片之各側面夾角均大於90度且 本發明另提供一種發光裝置之製 數顆發光半導體晶片於該基板上，料’’d :提供-基板；形成複 對該些發辭導體“ 導體晶料有-發光面； 發光面之各麻，其丨^少―帛 &光轉體W频-鄰接該 弟—側面與該發光面形成一第一夾角及—第 1249860 ίϋ其中該第—夾角係次於9G度且小於18G度；形成—發光層以覆 盒°亥么光面、及該第一側面之至少部分表面。 及該=半ίΐ:可更包括形成一第-黏著層以覆蓋該基板、發光層 片分it i述步驟更包括切割第—轉層及基板以使該些發辭導體晶 其中，該基板係以藍寶石材料製成。 其中，该基板係以碳化石夕材料製成。 面係::該側面係形成有-漏光部，該發光層所覆蓋之至少部分表 面之^驟，光層以_覆蓋光面、及該第—側面之至少部分表 部八^ m域H著層於該發光面、及該第-側面之至少 。丨H;及、將營光粉黏著於該第二黏著層表面以形成發光層。 步驟，係包以;^蓋雜絲、及該第—側面之至少部分表面之 【實施^式】—I光奈米分子層，然後覆蓋—黏著層。 ί=ίΐ7紐咖及其製造方法。請參閱各圖示說明。 不限於此^形狀。a c圖，本貫施例係以三種梯形半導體晶片為例，但 面22=7^=^繼，心輪22及鄰接發光 形成-第ΐΓ26，發光面22與第—側面及其餘側面 々、於⑽度體^中該第一爽角θ 1大於卯度且 朵始 日日片20經由發光面以放射出一呈有第一油具沾 先線，例如藍光。而第二夾角Θ2則維持90度。 弟皮長的 依據第lb圖所示，發光半導舻曰 面32之-第-側面34及^體日曰片30，具有—發光面32及鄰接發光 且小·度夾㈣大於9。度 的光線，例如藍光。^ 經由發光面32放射出—具有第一波長 光而苐—失角02則大於9〇度且小於180度，但與第— 1249860 夾角為不同角度。 依據第1C圖所示，發光半導鋏曰y ^ w i 面42之-繁-偏心甘1 片4〇，具有一發光面42及鄰接發光 面形成-第-夾角Θ1及-第二夾角θ2,盆㈣“ _八餘側 Μ均大於90度且小於⑽度，發光半導：：^:夹角及第二夾角Θ1、 一具有第-波長的光線，例如藍光。W日日片4G經由發光面42放射出 部χίΐΐϊϊ種日而完成，例如於副面之漏光 邛X形成傾斜面，以方便後續之發光層形成於其上。 請參閱第2圖，本實施例以第lb圖形半 ⑽，係覆蓋發光半導體晶片30之側面34、36^二 J具有第—波長的光線如藍光激發而放射出一具有第 述表ΐ述==一般可為將均勻混入黏膠之營光粉層塗佈於上 J ^aaa"30 ^ 問題，光面32及耻部31、33放射，為解決此一 充ί彳覆盍漏光部31、33及主發光面32，以使發光層100 充刀文k光激發而放射出黃光，並經混合而形成白光。 ^ 本實施例㈣1b圖之梯形半導刪為例，惟 分表^ ’該發光層用以覆蓋該發光面、及各側面之至少部 之至少部ΓΓ係匕Ϊ，成一黏著層130於發光面32、及側面34、36 勒“:广’ 光部31、33 °然後將縣粉i4Q黏著或鼓入於 钻者層130表面以形成發光層3〇〇。 閱各^^㈣圖，本實施例係揭露一種發光裝置之製造方法，請參 基板月。參閱第4a圖，首先為提供一基板2〇〇，例如是藍寶石基板或碳化石夕 上，:ίΐ明參閱第4&圖，形成複數顆發光半導體晶片21Q於基板200 以各^光半導體晶片210具有一發光面220，相鄰半導體晶片上 !249860 則包括一切割道240。 對準切割道第处圖，對該些發光半導體晶片21G進行切割，例如 面220之側面田切割，致使各發光半導體晶片210形成-鄰接發光 側面之失角仡大二t光面220與4個側面243形成夾角0，其中至少一 赋於90度且小於180度。 雷射切割之方十 面242或梯开彡夕工，可以部份切割以露出基板200表面，如V形之切割 其次，往表面，或者元全切割至基板2〇〇底部，如切割面246。 於之I閱第&圖，本實施例主要係利用美國公開專利20議222572 及主=面220覆蓋一層發光奈米分子層棚。 ;、、;、後开/成一黏著層420以覆蓋發光奈米分子層4〇〇。 亡述所揭露之黏著層可為環氧樹脂等膠類材料。 取後清參閱第4d ®，㈣離或第二次雷射切割方式分 片，完成發光裝置之製作。 干㈣日日 #藉由上述實施例，可以避免當半導體發光晶片為垂直側壁時，益 耆發光層於其側面，致使漏光部發出藍光，無法 【圖式簡單說明】 差」主發男冬梯敗主導體晶片之^〇 ^------- 盖jb圖魅^本m梯盤^導體晶片之另一實施 复本發弟亚^導體晶片之 差一gJAM示由發A屢第ib圖之绋形半導之示咅 1249860 第4a至4d圖係顯示本發明之發光裝置製造方法實施例。 【符號說明】 發光半導體晶片〜20 ;發光面〜22 ;第一側面〜24 ;其餘側面〜26 ;第一夾角 〜01 ;第二夾角〜Θ2 ;發光半導體晶片〜30 ;發光面〜32 ;第一側面〜34 ; 其餘側面〜36 ;發光半導體晶片〜40 ;發光面〜42 ;第一側面〜44 ;其餘側面 〜46;發光層〜100;漏光部〜31、33;黏著層〜130;螢光粉〜140;發光層300 ; 基板〜200 ;發光半導體晶片〜210 ;切割道〜240 ;發光面〜220 ;側面〜243 ; 夹角〜0 ;切割面〜242、246 ;發光奈米分子層〜400 ;黏著層〜420 〇1249860 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a light-emitting device, a method of fabricating the same, and a method of fabricating the same. [Prior Art] The light-emitting surface of the bulk wafer is attached to the yellow light emitted by the basket light. The white light diode currently on the market is connected to the blue light-emitting diode. When the blue light diode emits blue light, it will emit light. The layer light mixes to form white light. SUMMARY OF THE INVENTION The present invention is directed to a light-emitting device comprising a light-emitting surface and respective side surfaces adjacent to the light-emitting surface, wherein at least the first side and the second side are at an angle of more than 90 degrees and Less than (10) degrees, the light-emitting surface emits a light having a first wavelength; and a light-emitting layer covers the semiconductor surface; and the light-emitting layer is radiated - The two-wavelength grade of the shirt. And the light with the first - "light is blue light, the light having the second wavelength is yellow light. The object of the present invention is to provide another recording device comprising: a hair emitting surface and a side surface adjacent to the main light emitting surface, wherein at least: 曰曰, having a light surface forming a first angle, the first _ side having ― First—=, the main emission emits a light-emitting surface of the light-emitting portion having a 帛-wavelength, and the light-emitting layer is subjected to the first wavelength=:,,:::: the first light leakage portion and the The light of the Lord. The first line is excited by 33 and has a second wavelength. A preferred embodiment of the invention is that the illuminating conductivity is less than 180 degrees. The angle of each side of the bovine guide-strip is greater than 90 degrees, and the present invention further provides a illuminating device for manufacturing a plurality of illuminating semiconductor wafers on the substrate, the material ''d: providing-substrate; forming a reciprocal conductor "The conductor crystal has a light-emitting surface; each of the light-emitting surfaces of the light-emitting surface, which is less than 帛-帛&the light-transfer body W-frequency-adjacent to the younger brother-side forms a first angle with the light-emitting surface and - 1249860 ίϋ The first-angle is next to 9G degrees and less than 18G degrees; forming a light-emitting layer to cover the surface of the box and at least part of the surface of the first side. And the = half-ΐ: may further comprise forming a first-adhesive The step of covering the substrate and the luminescent layer further comprises cutting the first layer and the substrate to crystallize the horn conductors, wherein the substrate is made of sapphire material, wherein the substrate is made of carbon fossil. Made of eve material: surface system: the side surface is formed with a light leakage portion, at least part of the surface covered by the light emitting layer, the light layer covers the light surface with _, and at least part of the surface portion of the first side ^ m domain H is layered on the light emitting surface and at least the first side. 丨H And, the camping powder is adhered to the surface of the second adhesive layer to form a light-emitting layer. The step is to cover the surface of the mat and the at least part of the surface of the first side. Molecular layer, then cover-adhesive layer. ί=ίΐ7 Newca and its manufacturing method. Please refer to the illustrations. Not limited to this shape. ac diagram, this example is based on three trapezoidal semiconductor wafers, but Face 22=7^=^, the heart wheel 22 and the adjacent light-emitting formation - the second ,26, the light-emitting surface 22 and the first side and the remaining side 々, in the (10) degree body ^ the first refresh angle θ 1 is greater than the twist and the flower The first day of the film 20 is emitted through the light emitting surface to emit a first oil stick line, such as blue light, and the second angle Θ 2 is maintained at 90 degrees. The second length of the skin is shown in Figure lb. The face-to-side side 34 and the body-side day 30 have a light-emitting surface 32 and a light that is adjacent to the light-emitting and small-sized clip (four) greater than 9 degrees, such as blue light. ^ is emitted through the light-emitting surface 32 - having The first wavelength of light and the 失 angle 02 are greater than 9 degrees and less than 180 degrees, but at an angle different from the angle of 12498480. According to FIG. 1C, the light-emitting semi-conducting y y ^ surface 42 has a light-emitting surface 42 and an adjacent light-emitting surface forming a first-angle Θ1 and a second angle θ2. The basin (4) "_ 八余ΜΜ is greater than 90 degrees and less than (10) degrees, the illuminating semi-conducting:: ^: the angle and the second angle Θ 1, a light having a first wavelength, such as blue light. The W-day piece 4G is completed by emitting a portion of the light-emitting surface 42. For example, the light leakage 邛X of the sub-surface forms an inclined surface to facilitate formation of the subsequent light-emitting layer thereon. Referring to FIG. 2, in the embodiment, the lb pattern half (10) covers the side surface 34 of the light emitting semiconductor wafer 30, and the light having the first wavelength is excited by the blue light to emit a light having a description of the table. = Generally, the camping powder layer which is evenly mixed into the adhesive is applied to the upper J ^aaa"30 ^ problem, and the smooth surface 32 and the shame portions 31, 33 are radiated, in order to solve the problem of the light leakage portion 31, 33 and the main light-emitting surface 32 are such that the light-emitting layer 100 is excited by the light to emit yellow light, and is mixed to form white light. ^ The trapezoidal semi-conductor of the first embodiment (4) is shown as an example, but the sub-surface is used to cover the light-emitting surface and at least part of each of the side surfaces, and form an adhesive layer 130 on the light-emitting surface. 32, and the side 34, 36 Le ": Guang' light part 31, 33 ° then the county powder i4Q adhered or drummed into the surface of the drill layer 130 to form the light-emitting layer 3 〇〇. Read each ^ (four) map, this implementation For example, a method for manufacturing a light-emitting device is disclosed. Referring to FIG. 4a, first, a substrate 2 is provided, for example, a sapphire substrate or a carbonized stone, and a reference is made to the fourth & The light-emitting semiconductor wafer 21Q has a light-emitting surface 220 on the substrate 200, and the adjacent semiconductor wafers 249860 includes a dicing street 240. Aligning the dicing streets, the light-emitting semiconductor wafers 21G Cutting, for example, side-cutting of the face 220, causes each of the light-emitting semiconductor wafers 210 to form a declination angle adjacent to the light-emitting side. The second light-emitting surface 220 forms an angle with the four side surfaces 243, at least one of which is 90 degrees and smaller. 180 degrees. The square of the laser cutting The surface 242 or the ladder may be partially cut to expose the surface of the substrate 200, such as a V-shaped cut, followed by a surface, or a full cut to the bottom of the substrate 2, such as the cut surface 246. & Figure, this embodiment mainly uses U.S. Patent No. 20, 222,572 and main = surface 220 to cover a layer of luminescent nano-molecular layer shed; ;,;, after opening / forming an adhesive layer 420 to cover the luminescent nano-molecular layer 4黏 The adhesive layer exposed by the death statement may be a rubber material such as epoxy resin. Refer to Section 4d ®, (4) or the second laser cutting method to complete the fabrication of the light-emitting device. By the above embodiment, it can be avoided that when the semiconductor light-emitting chip is a vertical sidewall, the light-emitting layer is on the side of the light-emitting layer, so that the light-emitting portion emits blue light, which cannot be [simplified in the drawing]. The chip ^ 〇 ^------- cover jb map charm ^ this m ladder ^ another implementation of the conductor wafer copy of the brother of the ^ conductor wafer difference between a gJAM show by the hair A repeated ib diagram Form semi-conductive 咅 1249860, Figures 4a to 4d show a method of manufacturing the illuminating device of the present invention Example. [Symbol Description] Light-emitting semiconductor wafer ~ 20; light-emitting surface ~ 22; first side ~ 24; remaining side ~ 26; first angle ~ 01; second angle ~ Θ 2; light-emitting semiconductor wafer ~ 30; light-emitting surface ~ 32; One side ~ 34; the remaining side ~ 36; light emitting semiconductor wafer ~ 40; light emitting surface ~ 42; first side ~ 44; remaining side ~ 46; light emitting layer ~ 100; light leakage part ~ 31, 33; adhesive layer ~ 130; Light powder ~ 140; light-emitting layer 300; substrate ~ 200; light-emitting semiconductor wafer ~ 210; cutting track ~ 240; light-emitting surface ~ 220; side ~ 243; angle ~ 0; cutting surface ~ 242, 246; ~400; adhesive layer ~420 〇