1249821 (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關薄膜形成方法，薄膜形成裝置，有·機電 激發光裝置的製造方法，有機電激發光裝置，及β子彳幾器 【先前技術】 有機電激發光（以下稱爲有機EL)裝置是旦有 薄膜的構造之自發光型的高速回應性顯示元件，因此可形 成輕且動畫對應佳的顯示面板，所以近年來作爲FPD ( Flat Panel Display)電視等的顯示面板，非常受到注目。 其代表性的製造方法，例如有藉由光蝕刻微影技術，使 IT 0 (銦-錫氧化物）等的透明陽極圖案化成所望的形狀， 更以電阻加熱式真空蒸鍍裝置來使有機材料積層成膜，然 後形成陰極之方法。在此，藉由蒸鍍M g A g等低功函數的 金屬陽極膜來形成陰極，更密封於惰性氣體環境中，藉此 來針對水分及氧氣等，保護發光元件。 又，藉由改變發光材料，使發光色變化成各式各樣， 因此可在每個畫素藉由各個光罩蒸鍍來製作紅，綠，藍的 發光元件，而使能夠製造非常鮮明的全彩有機EL裝置。 如此之全彩有機EL裝置的製造方法是以比面板尺寸 更大且薄的高精細金屬光罩來覆蓋所望蒸鍍部份，從玻璃 基板背面藉由某特定的磁石來吸引該金屬光罩的狀態下， 依各色來實施高精度的選擇蒸鍍，藉此來製作全彩有機 -4- (2) 1249821 E L裝置（例如參照專利文獻1 )。 [專利文獻i】特開2 0 02 - 7 5 6 3 8號公報 【發明內容】 (發明所欲解決的課題） 但，由於金屬光罩的熱膨脹係數比面板用玻璃基板還 要大上非常多，因此一旦面板尺寸變大，則金屬光罩會因 蒸鍍時的輻射熱作用而比面板用玻璃基板更大幅度地擴展 ’藉此產生應力，因該應力而造成在磁石所吸引的部份產 生浮起’導致會有無法實施高精度且正確的蒸鍍之問題。 例如’經常發生材料混合於其他顏色的畫素等不良的情況 ’導致會有良品率非常差的問題。 本發明是有鑑於上述課題而硏發者，其目的是在於提 供一種可高精度且正確地進行光罩蒸鍍等的各種圖案化成 月吴之溥腠形成方法，及薄膜形成裝置，以及使用該薄膜形 成方法之有機電激發光裝置的製造方法，及有機電激發光 裝置，具備該有機電激發光裝置的電子機器。 (用以解決課題的手段> 爲了達成上述目的 本發明的薄膜形成 光罩，而將上述材料源 其特徵係具有： ’本發明是採用以下的構成。 方法’係於基板與材料源之間配置 的材料作爲薄膜形成於上述基板， 基板密著過程 其係使上述光罩與上述基板密著； (3) 1249821 間隙測定過程，其係測定上述光罩與上述基板的間隙 ;及 薄膜形成過程，其係按照該間隙測定過程的測定結果 來形成上述薄膜。 在此，所謂「按照測定結果來形成薄膜的薄膜形成過 程」是意指根據測定結果來對薄膜形成過程進行各種控制 。例如，使薄膜形成條件變化，而以所望的條件來實施薄 膜的形成。 φ 如此一來，可藉由實施基板密著過程來使光罩與基板 密著。又，因爲可藉由實施間隙測定過程來測定處於密著 狀態的光罩與基板的間隙，所以可檢測出熱膨脹所引起的 光罩浮起。又，可按照該間隙測定過程的測定結果來實施 薄膜形成過程，藉此來防止該間隙的發生’而能夠在使光 罩與基板密著的狀態下於基板形成薄膜。經由這樣一連串 的過程，可高精度且正確地對基板形成對應於光罩的開口 部之規定的圖案的薄膜。因此’可制止像以往那樣材料混 ® 合於其他顏色的畫素等不良的問題發生’而使能夠達成良 品率的提升。 又，上述薄膜形成方法中’在上述薄膜形成過程之前 進行上述間隙測定過程。 藉此，可在賨施間隙測定過程之後，按照該間隙測定 過程的測定結果來實施薄膜形成過程’因此可在良好的密 著狀態下實施薄膜的形成。又’可在確認光罩與基板的密 著狀態後實施薄膜的形成。 -6- (4) 1249821 又’上述_ i吴形成方法中，與上述薄膜形成過程同時 進行上述間隙測定過程。 藉此’可一邊實施間隙測定過程，一邊按照該間隙測 定過程的測定結果來竇施薄膜形成過程，因此可在薄膜被 形成的期間測定間隙’按照該測定結果來實施薄膜形成過 程。 又’上述薄膜形成方法中，按照上述間隙測定過程的 測定結果來停止上述薄膜形成過程。 φ 賴此’例如當間隙測定過程的測定結果顯示異常（間 隙變大）時，薄膜形成過程會被停止，所以可防範在間隙 大的狀態下形成薄膜。因此，可防範材料混合於其他顏色 的畫素等不良情況發生。 又’上述薄膜形成方法中，按照上述間隙測定過程的 測定結果來改變上述基板密著過程的密著力。 藉此’可按照間隙的大小來改變光罩與基板的密著力 ，因此例如當間隙變大時’可藉由提高光罩與基板的密著 馨 力來縮小間隙。 又，上述薄膜形成方法中，上述基板密著過程係藉由 磁力來使上述基板與上述光罩密著。 在此是採用電磁石或永久磁石來產生磁力。使用電磁 石時’可藉由控制電流量來控制磁力。又，使用磁石時， 可不需要電流供給，而使用規定的磁力來吸引。 藉此’可利用磁力來將光罩吸著於基板側，因此可使 兩者良好的密著。 (5) (5)1249821 又’上述薄膜形成方法中，上述基板密著過程係使上 述基板按壓於上述光罩而密著。 在此’所謂使基板按壓於光罩，是使用規定的重物來 對基板施加荷重，或使用彈簧等的彈性體來對基板施加荷 重’而來將基板按壓於光罩。藉此，可使兩者密著。 又’上述薄膜形成方法中，上述基板密著過程係藉由 靜電力來使上述基板與上述光罩密著。 在此，所謂藉由静電力來使光罩與基板密著，是分別 鲁 對光罩與基板施加極性相異的電位（+)及（-)。藉此， 可利用產生於光罩與基板之間的静電力來使兩者密著。 又’上述薄膜形成方法中’上述間隙測定過程係使用 雷射光。 在此’所謂利用雷射光’是對複數個測定對象物照射 雷射光’測定分別由該複數個測定對象物所反射的雷射光 強度，藉此來測定複數個測定對象物間的距離。 如此一來’可測定雷射光的強度變化來作爲光罩與基 · 板的間隙量’因此可容易測定間隙。又，由於是使用非接 觸的方式來針對測定對象物進行光學性的測定，因此不會 損傷或破壞測定對象物。 又’上述薄膜形成方法中，上述間隙測定過程係藉由 青争電電容的測定來進行。 耢此’可測定静電電容來作爲光罩與基板的間隙量， 因此可容易測定間隙。又，由於是使用非接觸的方式來針 對測定對象物進行電性的測定，因此不會損傷或破壞測定 (6) 1249821 對象物。 乂，上述薄膜形成方法中，上 ά丨不口=1丄 述基=之上述薄膜的非形成面的—側來進行 ?曰此’材料源的材料不會附著於間隙測定手肖 止因材料附著於間隙測定手段而造成測定誤差的發生。所 以，可良好地測定光罩與基板的間隙。 又，上述薄膜形成方法中’上述間隙測定過程係測定 基板的主面内的角落部附近或中央部的其中至少一方 之上述間隙。 / 在此，基板的主面内的角落部附近或其中央部爲容易 產生光罩與基板的間隙之部位。因此，藉由測定角落=附 近或中央部，可測定出容易產生間隙的部份之間隙。 又本發明的溥膜形成裝置，係於基板與材料源之間 配置光罩，而將上述材料源的材料作爲薄膜形成於上述基 板，其特徵係具有： 基板密著手段，其係使上述光罩與上述基板密著； 間隙測定手段，其係測定上述光罩與上述基板的間隙 ;及 薄膜形成手段，其係於上述基板形成薄膜。 如此一來，可藉由具備基板密著手段來使光罩與基板 密著。又，可藉由具備間隙測定手段來測定處於密著狀態 的光罩與基板的間隙，因此可檢測出熱膨脹所引起的光罩 浮起或剝離。又，可按照該間隙測定手段的測定結果來實 施薄膜形成過程’藉此來防止該間隙的發生’而能夠在使 (7) (7)1249821 光罩與基板密著的狀態下於基板形成薄膜。藉由具備如此 的手段，可高精度且正確地對基板形成對應於光罩的開口 部之規定的圖案的薄膜。因此，可制止像以往那樣材料混 合於其他顏色的晝素等不良的問題發生’而使能夠達成良 品率的提升。 又，上述薄膜形成裝置中，使上述間隙測定手段移動 於與上述基板平行的方向。 藉此，可使上述間隙測定手段配置於基板面上的任意 位置。因此，可測定任意位置的光罩與基板的間隙。 又，上述薄膜形成裝置中，更具備控制手段，其係控 制基板密著手段，上述間隙測定手段，上述薄膜形成手段 ’及上述移動手段的至少其中之一。 在此，控制手段具有控制薄膜形成裝置的全體之機能 〇 因此’控制手段可按照間隙測定手段的測定結果來控 制搏0吴形成過程。又，該控制手段可使基板密著手段的密 著力變化。又，該控制手段可控制移動手段。1249821 (1) IX. Description of the Invention [Technical Field of the Invention] The present invention relates to a film forming method, a film forming apparatus, a method of manufacturing an electromechanical excitation light device, an organic electroluminescence device, and a β-substrate device [ Prior Art Organic electroluminescence (hereinafter referred to as an organic EL) device is a self-luminous type high-speed responsive display element having a thin film structure, so that a display panel that is light and has an excellent animation can be formed, so in recent years, it has been used as an FPD ( Flat Panel Display) Display panels such as TVs are very attractive. A typical manufacturing method is, for example, a photo-etching lithography technique, in which a transparent anode such as IT 0 (indium-tin oxide) is patterned into a desired shape, and a resistive heating vacuum evaporation apparatus is used to make an organic material. A method of laminating a film and then forming a cathode. Here, the cathode is formed by vapor-depositing a metal anode film having a low work function such as Mg g, and is sealed in an inert gas atmosphere, thereby protecting the light-emitting element against moisture, oxygen, or the like. Moreover, by changing the luminescent material and changing the luminescent color into various types, it is possible to produce red, green, and blue light-emitting elements by vapor deposition of each mask, and it is possible to manufacture a very vivid color. Full color organic EL device. The method for manufacturing such a full-color organic EL device covers a desired vapor-deposited portion with a high-definition metal mask larger than a panel size, and attracts the metal mask from a back surface of the glass substrate by a specific magnet. In the state, a high-precision selective vapor deposition is performed for each color to prepare a full-color organic-4-(2) 1249821 EL device (see, for example, Patent Document 1). [Patent Document i] Japanese Patent Laid-Open Publication No. 2 0 02 - 7 5 6 3 8 SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, since the coefficient of thermal expansion of the metal mask is much larger than that of the glass substrate for a panel Therefore, once the panel size is increased, the metal mask will expand more than the panel glass substrate due to the radiant heat during vapor deposition, thereby generating stress, which is caused by the stress. Floating up' causes problems that cannot be performed with high precision and correct evaporation. For example, a situation in which a material is often mixed with pixels of other colors often causes a problem that the yield is very poor. The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for forming various patterns into a mask, which can be performed with high precision and accurately, and a film forming apparatus, and a thin film forming apparatus. A method of manufacturing an organic electroluminescence device and an organic electroluminescence device, and an electronic device including the organic electroluminescence device. (Means for Solving the Problem) In order to achieve the above object, the film forming mask of the present invention has the following features: 'The present invention adopts the following configuration. The method' is between the substrate and the material source. The disposed material is formed as a film on the substrate, and the substrate is adhered to the film to adhere to the substrate; (3) 1249821 gap measurement process for measuring a gap between the mask and the substrate; and a film forming process The film is formed in accordance with the measurement result of the gap measurement process. Here, the "film formation process for forming a film according to the measurement result" means that the film formation process is variously controlled according to the measurement result. The film formation conditions are changed, and the formation of the film is performed under the desired conditions. φ In this way, the mask can be adhered to the substrate by performing the substrate adhesion process. Further, since the gap measurement process can be performed The gap between the reticle and the substrate in a closed state can detect the floating of the reticle caused by thermal expansion. According to the measurement result of the gap measurement process, the film formation process is performed, thereby preventing the occurrence of the gap, and the film can be formed on the substrate in a state where the mask and the substrate are adhered to each other. Through such a series of processes, high precision can be achieved. In addition, a film having a predetermined pattern corresponding to the opening of the mask is formed on the substrate. Therefore, it is possible to prevent the occurrence of defects such as the fact that the material is mixed with other colors, and the yield can be achieved. Further, in the above film forming method, the gap measuring process is performed before the film forming process. Thereby, the film forming process can be performed according to the measurement result of the gap measuring process after the application of the gap measurement process. The formation of the film is carried out in a good adhesion state. Further, the formation of the film can be carried out after confirming the adhesion state between the photomask and the substrate. -6- (4) 1249821 Further, in the above-mentioned method, The film formation process simultaneously performs the above-described gap measurement process. Thus, the gap measurement process can be performed while The measurement result of the gap measurement process is formed by the sinus film formation process, so that the gap can be measured during the formation of the film. The film formation process is performed according to the measurement result. Further, in the above film formation method, the measurement result of the gap measurement process is performed. In order to stop the film formation process described above, φ depends on the fact that, for example, when the measurement result of the gap measurement process shows an abnormality (the gap becomes large), the film formation process is stopped, so that the film can be prevented from being formed in a state where the gap is large. In the above-mentioned film forming method, the adhesion force of the substrate adhesion process is changed according to the measurement result of the gap measurement process. Thus, the gap can be determined according to the size of the gap. The adhesion between the reticle and the substrate is changed, so that, for example, when the gap becomes large, the gap can be reduced by increasing the adhesion of the reticle to the substrate. Further, in the above film forming method, the substrate adhesion process is performed by adhering the substrate to the photomask by a magnetic force. Here, electromagnetic or permanent magnets are used to generate magnetic force. When using an electromagnet, the magnetic force can be controlled by controlling the amount of current. Further, when a magnet is used, it is possible to attract with a predetermined magnetic force without requiring current supply. Thereby, the magnetic force can be used to suck the photomask on the substrate side, so that the two can be well adhered. (5) In the above-mentioned film forming method, the substrate adhesion process is performed by pressing the substrate against the photomask. Here, the pressing of the substrate to the reticle is performed by applying a load to the substrate using a predetermined weight or applying a load to the substrate using an elastic body such as a spring to press the substrate against the reticle. Thereby, the two can be kept close. Further, in the above film forming method, the substrate adhesion process is performed by adhering the substrate to the photomask by an electrostatic force. Here, the electrostatic mask is used to adhere the mask to the substrate, and the potentials (+) and (-) different in polarity are applied to the mask and the substrate, respectively. Thereby, the electrostatic force generated between the photomask and the substrate can be utilized to make the two adhere. Further, in the above film forming method, the above-described gap measuring process uses laser light. Here, the term "the use of the laser beam" is performed by irradiating a plurality of objects to be measured with laser light, and measuring the intensity of the laser light reflected by the plurality of objects to be measured, thereby measuring the distance between the plurality of objects to be measured. In this way, the change in the intensity of the laser light can be measured as the amount of the gap between the mask and the substrate, so that the gap can be easily measured. Further, since the object to be measured is optically measured using a non-contact method, the object to be measured is not damaged or destroyed. Further, in the above film forming method, the gap measuring process is performed by measuring the electric capacitance. Here, the capacitance can be measured as the amount of gap between the mask and the substrate, so that the gap can be easily measured. Further, since the measurement object is electrically measured by a non-contact method, the measurement (6) 1249821 object is not damaged or destroyed. In the above-mentioned film forming method, the material of the material source does not adhere to the gap measurement material when the upper side is not the side of the non-formed surface of the film. The measurement error is caused by adhesion to the gap measuring means. Therefore, the gap between the reticle and the substrate can be well measured. Further, in the above film forming method, the gap measuring process measures at least one of the vicinity of a corner portion or a center portion in a main surface of the substrate. / Here, the vicinity of the corner portion in the main surface of the substrate or the central portion thereof is a portion where a gap between the photomask and the substrate is easily generated. Therefore, by measuring the corner = the vicinity or the center portion, the gap of the portion where the gap is likely to occur can be measured. Further, the ruthenium film forming apparatus of the present invention is characterized in that a reticle is disposed between a substrate and a material source, and a material of the material source is formed as a thin film on the substrate, and the substrate has a substrate adhesion means for causing the light The cover is adhered to the substrate; the gap measuring means is for measuring a gap between the mask and the substrate; and the film forming means is for forming a film on the substrate. In this manner, the mask can be adhered to the substrate by the substrate adhesion means. Further, since the gap between the mask and the substrate in the adhered state can be measured by the gap measuring means, it is possible to detect the floating or peeling of the mask due to thermal expansion. Further, the film formation process 'by preventing the occurrence of the gap' can be performed according to the measurement result of the gap measuring means, and the film can be formed on the substrate in a state where the (7) (7) 1249821 mask is adhered to the substrate. . By providing such a means, it is possible to form a film corresponding to a predetermined pattern of the opening of the mask with high precision and accurately on the substrate. Therefore, it is possible to prevent a problem such as a problem in which a material is mixed with a color of another color as in the prior art, and it is possible to achieve an improvement in the yield. Further, in the film forming apparatus, the gap measuring means is moved in a direction parallel to the substrate. Thereby, the gap measuring means can be disposed at any position on the surface of the substrate. Therefore, the gap between the reticle and the substrate at any position can be measured. Further, the thin film forming apparatus further includes a control means for controlling the substrate adhesion means, the gap measuring means, at least one of the thin film forming means' and the moving means. Here, the control means has the function of controlling the entire film forming apparatus. Therefore, the control means can control the forming process of the beat according to the measurement result of the gap measuring means. Further, the control means can change the adhesion of the substrate adhesion means. Moreover, the control means can control the moving means.
又’本發明之有機EL裝置的製造方法，係使複數個 各相異的材料以規定的圖案附著於基板而形成之有機EL 裝置的製造方法，其特徵爲利用先前記載的薄膜形成方法 〇 藉此’可以規定圖案來將複數個各相異材料的薄膜形 成於基板。又’可高精度且正確地形成該規定圖案。因此 可制止像以往那樣材料混合於其他顏色的畫素等不良的 -10- (8) (8)1249821 問題發生，而使能夠達成良品率的提升。又，可防止對畫 素的混色。 又，本發明之有機EL裝置的特徵係藉由使用先前記 載的製造方法來製造。 藉此，可形成具有不會混色的畫素且可進行鮮豔的畫 像顯示之有機EL裝置。 又，本發明之電子機器的特徵係具備先前記載的有機 EL裝置。 在此，電子機器，例如可爲行動電話機，移動體資訊 終端機，手錶，打字機，個人電腦等的資訊處理裝置。 由於本發明具備使用先前記載的有機EL裝置之顯示 部，因此可形成具備具有不會混色的畫素且可進行鮮豔的 畫像顯示的顯示部之電子機器。 [實施方式】 以下，參照圖1〜圖8來説明本發明之薄膜形成方法 ’薄膜形成裝置，有機電激發光裝置的製造方法，有機電 激發光裝置，及電子機器。 並且，在以下的説明中，針對薄膜形成方法及薄膜形 成裝置的一形態，亦即光罩蒸鍍法及光罩蒸鍍裝置來進行 説明。而且，以下的實施形態並非限於本發明，亦可在本 發明的技術思想範圍内任意變更。又，各圖中，爲了使各 層或各構件能夠形成圖面上可識程度的大小，而使各層或 各構件的縮小比例有所不同。 -11 - (9) (9)1249821 (光罩蒸鍍裝置的第1實施形態） 圖1是表不本發明之光罩蒸鍍裝置（薄膜形成裝置） 的槪略構成的側剖面圖。如圖1所示，光罩蒸鍍裝置E X 是在處理室c Η内的下部附近具備蒸鍍源（材料源，薄膜 形成手段）1 ’膜厚感測器2，及擋板（薄膜形成手段）3 ，在處理室C Η内的上部附近具備蒸鏟光罩Μ，蒸鍍對象 的基板G，薄板磁石（基板密著手段）4，及雷射變位計 (間隙測定手段）5，在處理室CH的外部具備排氣手段 V c，移動裝置（移動手段）Τ，及控制裝置（控制手段） CONT。 其次，說明有關各構成要素。 處理室CH是即使内部被施以真空狀態，還是能夠承 受得了該壓力的堅固容器。並且，在處理室CH設有未圖 示的閥等，在該等的接合面設有〇型環等的密封構件，内 部會被保持於氣密的真空狀態。 蒸鍍源1是具有供以蒸鍍於基板G的規定材料，藉由 未圖示的加熱器等，使該規定材料能夠氣化。 膜厚感測器2具有水晶振動子，可嚴密管理蒸鍍源1 所發出的蒸鍍物速度（蒸鍍速度）。可藉由該膜厚感測器 2來實施蒸鍍於基板G的膜厚之管理。 擋板3爲遮蔽蒸鍍源1與基板G之間，或予以解除者 。該擋板3是在膜厚感測器2所管理的膜厚達到規定的値 時動作，遮蔽蒸鍍源1的正上方，終了或停止蒸鍍。 -12· (10) (10)1249821 光罩Μ具有複數個開口部M a，僅使通過該M a的蒸 鑛物附著於基板G。因此，藉由將開口部M a形成規定圖 案’可將規定圖案的蒸鍍物形成於基板G。例如，可對應 於有機EL裝置的畫素圖案來形成開口部Ma，藉由蒸鍍來 將蒸鏟物的畫素圖案形成於基板G。又，光罩Μ的材料爲 採用可藉由磁石等來吸著的磁性材料，或可藉由結晶向異 性蝕刻來形成光罩的矽材料等非磁性材料。本實施形態的 光罩Μ是由可藉薄板磁石4來吸著的磁性材料所構成。 基板G爲蒸鍍對象，隔著光罩μ來與蒸鍍源1呈對 向配置。該基板G的材料，例如爲採用玻璃基板等的透明 性基板’或金屬材料，樹脂材料等的非透明性材料。又， 玻璃基板的材料爲採用石英玻璃或硼矽酸玻璃。 薄板磁石4是作爲本發明的基板密著手段，在本實施 形態中’當光罩Μ爲金屬光罩等時，用以將該金屬光罩吸 著於基板G °並且’該薄板磁石4是由蒸鍍源1側來看設 置於基板G的背側，亦即蒸鍍物的非形成面側。而且，在 薄板磁石4中，開口部4a會被設置於各處，使雷射變位 計5的雷射光通過。 雷射變位計5是作爲本發明的間隙測定手段，利用雷 射光來測定光罩Μ與基板〇的間隙。雷射變位計5是由 蒸鍍源1側來看設置於基板G的背側，亦即蒸鍍物的非形 成面側。 排氣手段V c是由真空泵及壓力調整閥所構成，可按 照設置於處理室C Η之未圖示的真空計的測定値來將該處 - 13- (11) (11)1249821 理室c Η内的壓力維持於所望者。 移動裝置Τ是作爲本發明的移動手段，使雷射變位計 5移動於薄板磁石4面上（基板G的面上）的平面方向。 錯此’雷射變位計5可測定平面内的規定位置之光罩μ與 基板G的間隙。 控制裝置C ΟΝΤ是作爲本發明的控制手段，可統一控 制黑鍍源1 ’膜厚感測器2，檔板3，雷射變位計5，排氣 手段Vc’及移動裝置τ的各構成要素。又，控制裝置 馨 C Ο N T亦可按照規定的電腦程式來使各構成要素動作。又 ’可由雷射變位計5的測定結果來判定間隙是否爲規定値 以下。又，可按照如此的測定結果或判定結果來進行擋板 3的開閉動作，或對蒸鍍源1的加熱器供給電力，或調整 處理室C Η内的壓力等，調整各種薄膜形成條件。 並且，在光罩蒸鍍裝置ΕΧ中，爲了改善蒸鍍的膜厚 分布，而可具備供以使基板G與蒸鍍光罩Μ如圖1所示 維持固定的狀態下旋轉的旋轉機構。 φ 其次，參照圖2來說明有關雷射變位計5的構成及動 作。 雷射變位計5是以光源部5 a，反射鏡部5 b，透鏡部 5 c，透鏡驅動部5 d，及受光部5 e爲主要構成要素。 在如此的構成中，在光源部5 a所發光後的雷射光會 經由具備半反射鏡的反射鏡部5 b，以及經由利用透鏡驅動 部5 d來上下振動的透鏡部5 c照射於被測定部。在此，藉 由使透鏡部5 c上下振動，雷射光的焦點位置會掃描於雷 -14- (12) (12)1249821Further, the method for producing an organic EL device according to the present invention is a method for producing an organic EL device in which a plurality of different materials are attached to a substrate in a predetermined pattern, and is characterized in that the film forming method described above is used. This can define a pattern to form a plurality of films of different materials on the substrate. Further, the predetermined pattern can be formed with high precision and accuracy. Therefore, it is possible to prevent the occurrence of a problem such as a -10- (8) (8) 1249821 problem in which a material is mixed with a pixel of another color as in the related art, and it is possible to achieve an improvement in the yield. Also, it prevents color mixing of pixels. Further, the characteristics of the organic EL device of the present invention are produced by using the previously described manufacturing method. Thereby, an organic EL device having a pixel which does not mix colors and which can display a vivid image can be formed. Further, the electronic device of the present invention is characterized in that it has the organic EL device described above. Here, the electronic device can be, for example, an information processing device such as a mobile phone, a mobile information terminal, a watch, a typewriter, a personal computer or the like. According to the present invention, since the display unit of the organic EL device described above is used, it is possible to form an electronic device including a display unit having a pixel that does not mix colors and can display a vivid image. [Embodiment] Hereinafter, a thin film forming apparatus, a method of manufacturing an organic electroluminescence device, an organic electroluminescence device, and an electronic device according to the present invention will be described with reference to Figs. 1 to 8 . Further, in the following description, a film forming method and a film forming apparatus, that is, a mask vapor deposition method and a mask vapor deposition apparatus will be described. Further, the following embodiments are not limited to the present invention, and may be arbitrarily changed within the scope of the technical idea of the present invention. Further, in each of the drawings, the reduction ratio of each layer or each member is different in order to allow each layer or each member to have a size that is identifiable on the drawing. -11 - (9) (9) 1249821 (First embodiment of the mask vapor deposition apparatus) Fig. 1 is a side cross-sectional view showing a schematic configuration of a mask vapor deposition apparatus (thin film formation apparatus) of the present invention. As shown in Fig. 1, the mask vapor deposition apparatus EX is provided with a vapor deposition source (material source, thin film forming means) 1' film thickness sensor 2, and a baffle (film formation means) in the vicinity of the lower portion in the processing chamber c. 3) a steaming shovel mask Μ, a substrate G for vapor deposition, a thin plate magnet (substrate adhesion means) 4, and a laser displacement gauge (gap measuring means) 5 are provided in the vicinity of the upper portion in the processing chamber C , The outside of the processing chamber CH is provided with an exhausting means Vc, a moving means (moving means), and a control means (control means) CONT. Next, the relevant constituent elements will be described. The processing chamber CH is a solid container capable of withstanding this pressure even if the inside is subjected to a vacuum state. Further, a valve (not shown) or the like is provided in the processing chamber CH, and a sealing member such as a 〇-ring is provided on the joint surfaces, and the inside is held in an airtight vacuum state. The vapor deposition source 1 has a predetermined material to be vapor-deposited on the substrate G, and the predetermined material can be vaporized by a heater or the like (not shown). The film thickness sensor 2 has a crystal vibrator, and the vapor deposition rate (vapor deposition rate) emitted from the vapor deposition source 1 can be closely managed. The film thickness of the substrate G can be managed by the film thickness sensor 2. The baffle 3 is between the vapor deposition source 1 and the substrate G, or is released. The baffle 3 operates when the film thickness managed by the film thickness sensor 2 reaches a predetermined level, and blocks the vapor deposition source 1 directly above, and stops or stops vapor deposition. -12· (10) (10) 1249821 The mask Μ has a plurality of openings M a , and only the vaporized mineral passing through the M a is attached to the substrate G. Therefore, the vapor deposition material of the predetermined pattern can be formed on the substrate G by forming the opening portion Ma into a predetermined pattern. For example, the opening portion Ma can be formed corresponding to the pixel pattern of the organic EL device, and the pixel pattern of the steamed shovel can be formed on the substrate G by vapor deposition. Further, the material of the mask enamel is a non-magnetic material such as a ruthenium material which can be adsorbed by a magnet or the like, or a ruthenium material which can be etched by anisotropic crystallization to form a reticle. The mask Μ of the present embodiment is composed of a magnetic material that can be sucked by the thin magnet 4 . The substrate G is a vapor deposition target, and is disposed opposite to the vapor deposition source 1 via the mask μ. The material of the substrate G is, for example, a transparent substrate such as a glass substrate, a metal material, or a non-transparent material such as a resin material. Further, the material of the glass substrate is quartz glass or borosilicate glass. The thin-plate magnet 4 is a substrate adhesion means of the present invention. In the present embodiment, when the photomask is a metal mask or the like, the metal mask is used to adsorb the metal mask to the substrate G° and the thin-plate magnet 4 is It is provided on the back side of the substrate G as viewed from the vapor deposition source 1 side, that is, on the non-formed surface side of the vapor deposition material. Further, in the thin-plate magnet 4, the opening portion 4a is provided everywhere, and the laser light of the laser displacement meter 5 is passed therethrough. The laser displacement meter 5 is a gap measuring means of the present invention, and the gap between the mask Μ and the substrate 测定 is measured by laser light. The laser displacement meter 5 is disposed on the back side of the substrate G as viewed from the side of the vapor deposition source 1, that is, on the non-formed surface side of the vapor deposition material. The exhaust means Vc is composed of a vacuum pump and a pressure regulating valve, and can be placed in accordance with a measuring gauge of a vacuum gauge (not shown) provided in the processing chamber C? - 13- (11) (11) 1249821 The pressure inside the sputum remains at the expectation. The moving device Τ is a moving means of the present invention, and the laser displacement meter 5 is moved in the planar direction of the four faces of the thin magnet (the surface of the substrate G). In this case, the laser displacement meter 5 can measure the gap between the mask μ and the substrate G at a predetermined position in the plane. The control device C is a control means of the present invention, and can collectively control the composition of the black plating source 1 'thickness sensor 2, the baffle 3, the laser displacement meter 5, the exhaust means Vc', and the moving device τ. Elements. Further, the control device 馨 C Ο N T can also operate the components in accordance with a predetermined computer program. Further, it can be determined from the measurement result of the laser displacement meter 5 whether or not the gap is equal to or less than the predetermined value. Further, the opening and closing operation of the shutter 3 can be performed in accordance with such measurement results or determination results, or electric power can be supplied to the heater of the vapor deposition source 1, or the pressure in the processing chamber C can be adjusted to adjust various film formation conditions. Further, in the mask vapor deposition apparatus, in order to improve the film thickness distribution of the vapor deposition, a rotation mechanism for rotating the substrate G and the vapor deposition mask 维持 in a state of being fixed as shown in Fig. 1 may be provided. φ Next, the configuration and operation of the laser displacement meter 5 will be described with reference to Fig. 2 . The laser displacement meter 5 is mainly composed of a light source unit 5a, a mirror unit 5b, a lens unit 5c, a lens driving unit 5d, and a light receiving unit 5e. In such a configuration, the laser light that has been emitted from the light source unit 5a is irradiated onto the mirror portion 5b including the half mirror and the lens portion 5c that is vibrated up and down by the lens driving unit 5d. unit. Here, by causing the lens portion 5 c to vibrate up and down, the focus position of the laser light is scanned at Ray -14-(12) (12) 1249821
射·光的P射方向。然後’只由雷射光的焦點結合後的被測 定部所反射後的雷射光會經由反射鏡部5 b的半反射鏡來 由受光部5 e所接受°如此’只由被測定部所反射後的雷 身寸光粗由除此以外的部份所反射後的雷射光相較之下，因 爲強度大，所以受光部5 e可檢測出被測定部的位置之W 射光強度的峰値。 因此，如圖2所示’光源部5 a所照射的雷射光L會 掃描被測定面。然後’在雷射光L的焦點與基板G的蒸鍍 形成面Ga的位置吻合下’產生反射光L1’該反射光L1 可由受光部5 e來檢測出峰値。並且，在雷射光L的焦點 與光罩Μ的密著面Mb的位置吻合下，產生反射光L2， 該反射光L2可由受光部5 e來檢測出峰値。 然後，運算由反射光L 1與反射光L 2所取得的峰値間 隔，藉此可測定蒸鍍形成面Ga與密著面Mb的距離，亦 即光罩Μ與基板G的間隙。 如此的雷射變位計 5可採用一般市售者，例如 KEYENCE 公司的 LT-8010，LT-81 10，LT-9 5 00。由於該 測定器本體非常小型，因此可配置於狹窄的處理室CH内 (光罩蒸鍍方法的第1實施形態） 其次，參照圖3的流程圖來說明光罩蒸鍍方法的第} 實施形態。該光罩蒸鍍方法是針對使用先前記載的光罩蒸 鑛裝置EX來形成畫素圖案於基板G時。 -15- (13) (13)1249821 首先’爲了使光罩Μ與基板G的間隙測定次數復位 ，而進行該測定次數N= 1的輸入（步驟S 1 )。 在此，該間隙測定次數是記憶於控制裝置C Ο N T。 其次，進行光罩Μ與基板G的對位（對準）（歩驟 S2 ) 〇 在該步驟S2中，藉由作動未圖示的搬送機構及定位 機構，使光罩Μ的開口部Ma能夠與設置於基板G的規定 圖案一致。 其次，實施使光罩Μ與基板G密著的基板密著過程 (步驟S 3 )。 在該步驟S 3中，以能夠夾持基板G的方式來使光罩 Μ與薄板磁石4接近，藉此於兩者間產生吸引力（磁力） ，光罩Μ會密著於基板G的蒸鍍形成面Ga。 其次，實施測定光罩Μ與基板G的間隙之間隙測定 過程（步驟S 4 )。 該步驟S4是利用上述雷射變位計5來進行。因此， 雷射光L會被照射於蒸鍍形成面Ga與密著面Mb，測定反 射後的反射光L 1，L2的強度，藉此來測定蒸鍍形成面Ga 與密著面Mb的間隙。並且，在該步驟S4中，移動裝置τ 會一邊使雷射變位計5移動於前後左右，一邊測定。 其次，判定蒸鍍形成面Ga與密著面Mb的間隙是^匕 規定値小或大（步驟S 5 )。 該步驟S5是在控制裝置CONT中進行。在控制裝蟹 CONT中，規定値會被事先記憶，比較該規定値與間隙測 (14) (14)1249821 定値。 藉此，當間隙比規定値更大時（No時），判斷成蒸 鍍不可能，然後移至步驟S 6。又，當間隙比規定値更小 時（Yes時），判斷成蒸鍍可能，然後移至步驟S 7。 在步驟S 6中，間隙測定次數是否滿3次，是在控制 裝置CONT中被判定。在控制裝置CONT中，間隙測定次 數的規定値會被事先記憶，比較該規定値與間隙測定次數 〇 藉此，當間隙測定次數比3更小時（No時），移至 步驟S6A。又，當間隙測定次數爲3時（Yes時），移至 步驟S 6 B。 在步驟S6A中，對間隙測定次數N的値加上1之後 ，回到步驟S 2，再度實施光罩Μ與基板G的對準調整。 並且，在步驟S 6 Β中，取供以強化光罩Μ與基板G的密 著力之措施。例如，更換現行薄板磁石4，而設置磁力強 的薄板磁石。經過步驟S6B之後，回到步驟S1，再度進 行該測定次數Ν = 1的輸入，根據上述步驟1〜步驟6的動 作流程來進行各種動作。 在步驟S 7中，進行實施蒸鍍的薄膜形成過程。 因此，蒸鍍源1的蒸鍍材料會氣化，蒸鍍物質會飛向 基板G，蒸鍍物質會僅射入相當光罩Μ的開口部Ma之基 板G的露出部。藉此，蒸鍍物質會對應於開口部Ma的圖 案來蒸鍍於基板G，形成薄膜。並且，薄膜的膜厚會藉由 膜厚感測器2來嚴密管理。 -17- (15) 1249821 其次，在進行蒸鍍的狀態下，實施測定光罩Μ與基板 G的間隙之間隙測定過程（步驟S 8 )。 該步驟S 8是與先前步驟4同樣進行。因此，雷射光 L會被照射於蒸鍍形成面Ga與密著面Mb ’測定反射光L 1 ，L2的強度，藉此來測定蒸鍍形成面Ga與密著面Mb的 間隙。並且，在該步驟S 8中，移動裝置T會一邊使雷射 變位計5移動於前後左右，一邊測定。 其次，判定蒸鍍形成面Ga與密著面Mb的間隙比規 鲁 定値小或大（步驟S 9 )。 該歩驟S9是在控制裝置CONT中進行。在控制裝置 CONT中’規定値會被事先記憶，比較該規定値與間隙測 定値。 錯此， 鍍不可能， Y e s 時）， 當間隙比規定値更大時（No時），判斷成蒸 移至步驟S 1 0。又，當間隙比規定値小時（ 判斷成蒸鍍可能，移至步驟S 1 1。 在步驟丨〇中，擋板3會遮蔽蒸鍍源1的上方，藉此 馨 來中斷蒸鍍處理。然後，回到步驟2，進行光罩Μ與基板 G的^位，根據上述步驟2〜步驟9的動作流程來進行各 種動作。 在歩驟丨1中，判定蒸鍍是否終了。 @該步驟u中，判定膜厚感測器2所測定後的膜厚 是否到_規定的値。 胃此’當膜厚未滿規定的値時（No時），回到步驟8 ’ 一邊測定間隙，一邊進行蒸鍍。又，當膜厚符合規定的 -18 - (16) 1249821 値時（Yes時），蒸鍍終了，因此擋板3會遮蔽蒸鍍源1 的上方’解除蒸鍍光罩Μ與基板G的固定，僅搬出基板 G。 如上述，在光罩蒸鍍裝置ΕΧ，及光罩蒸鍍方法中， 可藉由使用薄板磁石4來實施基板密著過程，而使光罩Μ 與基板G能夠密著。並且，使用雷射變位計5來實施間隙 測定過程，測定處於密著狀態的光罩Μ與基板G的間隙 ，所以可檢測出熱膨脹所引起的光罩Μ浮起或剝離。又，鲁 因爲按照雷射變位計5的測定結果來進行蒸鍍，所以可防 止光罩Μ與基板G的間隙發生，在使光罩Μ與基板G密 著的狀態下，將薄膜蒸鍍形成於基板G。經由這樣一連串 的過程’可高精度且正確地對基板G蒸鍍形成對應於光罩 Μ的開口部M a之規定的圖案的薄膜。因此，可制止像以 往那樣材料混合於其他顏色的衋素等不良的問題發生，而 使能夠達成良品率的提升。 又，由於在進行蒸鍍之前，測定光罩Μ與基板G的 鲁 間隙，因此可在使適當密著的狀態下蒸鍍形成薄膜。又， 可一邊測定光罩Μ與基板G的間隙’一邊按照該間隙的 測定結果來蒸鍍形成薄膜。 又，由於按照光罩Μ與基板G的間隙測定結果來停 止蒸鍍，因此當顯示測定結果異常（間隙大）時，可不在 該間隙大的狀態下形成薄膜。所以’可防範材料混合於其 他顏色的畫素等不良情況發生。 又，由於測定光罩Μ與基板G的間隙之手段爲使用 -19- (17) (17)1249821 雷射變位計5 ’因此可測定雷射光L的強度變化來作爲光 罩Μ與基板G的間隙量，所以可容易測定間隙。又，由 於是使用非接觸的方式來針對測定對象進行光學性的測定 ，因此不會損傷或破壞測定對象。 又’藉由使用雷射變位計5來測定光罩μ與基板〇 的間隙，而使能夠從基板G的薄膜的非形成面的一側來進 仃測疋’因此蒸鍍源1的材料不會附著於雷射變位計5， 可防止因材料附著於雷射變位計5而造成測定誤差的發生 φ 。所以，可良好地測定光罩Μ與基板G的間隙。 又’測疋光罩Μ與基板G的間隙之手段，亦可利用 靜電電容的變化來測定。藉此，可測定靜電電容來作爲光 罩Μ與基板G的間隙量，而使能夠容易測定間隙。又， 由於是使用非接觸的方式來針對測定對象進行電性的測定 ，因此不會損傷或破壞測定對象。 又，本實施形態中雖是使用蒸鍍用光罩來作爲光罩Μ ，但亦可爲例如使用濺鍍用光罩或CVD用光罩等，各種 · 氣相成膜法的圖案成膜法。 (光罩蒸鍍裝置之第1實施形態的變形例） 其次’說明有關光罩蒸鍍裝置之第1實施形態的變形 例。 在上述光罩蒸鍍裝置的第1實施形態中，基板密著手 段爲採用溥板石4，但在本變形例中是採用電磁石。 電磁石可藉由供給至線圈的電流來調節其磁力，因此 -20- (18) (18)1249821 可按照光罩Μ與基板G的間隙大小來改變光罩Μ與基板 G的密著力。例如，當間隙形成大時，可藉由提高供給至 線圈的電流量來提高光罩Μ與基板G的密著力，藉此間 隙會變小，可使強固密著。 又’具備此類電磁石時的光罩蒸鍍方法，可採用提高 供給至電磁石的電流之方法，作爲圖3所示流程圖之步騾 S 6 Β的光罩密著強化措施。藉此，可不需要進行磁石的吏 換作業。 β (光罩蒸鍍裝置的第2實施形態） 其次，說明有關光罩蒸鍍裝置的第2實施形態。 上述光罩蒸鍍裝置的第1實施形態及其變形例中，基 板密著手段爲採用薄板磁石4或電磁石，但本實施形態中 則是藉由對基板與光罩施加荷重來使按壓密著。 又，本實施形態中是針對與圖1所示的光罩蒸鍍裝置 ΕΧ相異的部份來進行説明。又，對與先前記載的實施形 鲁 態相同的構成賦予同樣的符號，而使説明簡略化。 如圖4所示，光罩蒸鍍裝置EX’是具備：作爲基板密 著手段的荷重施加部1 4，及由非磁性材料所構成的光罩 M，。 荷重施加部1 4是由重物1 5，插銷1 6 ’彈性構件1 7 所構成。 在重物1 5中設有開口部1 5 a，1 5 b，開口部1 5 a爲雷 射變位計5的雷射光所通過的部位，開口部1 5 b爲插銷1 6 -21 - (19) (19)1249821 所揷通的部位。 插銷1 6是以能夠插通貫通孔丨5 b之方式來配置，在 該插銷1 6的前端設有與基板g接觸的接觸部1 6 a。接觸 部1 6 a是由橡膠等的樹脂材料所構成，在與基板G接觸時 ，使不會傷及該基板G。彈性構件1 7爲橡膠或彈簧等習 知具有彈性的構件，設置於重物1 5與插銷1 6之間，緩和 接觸部1 6 a與基板G的接觸。 如此’在光罩蒸鍍裝置EX，中，由於形成具備荷重施魯 加部1 4的構成’因此與上述實施形態同樣的可使基板g 與光罩Μ確實地密著。因爲可藉由重物15的荷重來密著 ，所以不需要藉由磁力來使密著。因此，可使用非磁性材 料的光罩Μ’。 此外，在上述光罩蒸鍍裝置的第1及第2實施形態中 ，使光罩與基板G密著的手段，雖是使用磁力者或使用荷 重者，但本發明並非限於此。例如，亦可藉由靜電力來使 基板G與光罩Μ密著。藉由静電力來使光罩Μ與基板G # 密著者是分別在光罩Μ與基板G施加極性相異的電位（+ )及（-)來進行。 藉此，可利用產生於光罩Μ與基板G之間的靜電力 來使兩者密著。在利用如此的静電力之方法中，最好是具 胃基板及光罩的表面容易帶電的構成。 (光罩蒸鍍方法的第2實施形態） 其次，說明有關光罩蒸鍍方法的第2實施形態。 -22- (20) (20)1249821 圖5是表示藉由該光罩蒸鍍方法的第2實施形態來進 行光罩蒸鑛之蒸鍍對象的平面圖’圖6是表不光卓蒸鍍方 法的流程圖。 並且，在該光罩蒸鍍方法中使用先前記載的光罩蒸鍍 裝置E X。本實施形態是針對與圖3所示的流程圖相異的 部份進行説明，對與圖3相同的過程賦予同樣的符號’使 説明簡略化。 如圖5所示，本實施形態的蒸鍍對象是由複數個基板 · G所構成的主基板2 0。又，本實施形態的光罩蒸鍍方法是 在先前記載的光罩蒸鍍裝置EX内配置主基板20來實施蒸 鍍。又，本實施形態之光罩蒸鍍方法的流程圖主要是與先 前記載的光罩蒸鍍方法（圖3 )相同，只有步驟S 4，步驟 S 5，步驟S 6不同。 在步驟S4中，於基板G的平面内的規定位置測定光 罩Μ與基板G的間隙。該規定的位置爲基板G的角落部 附近的測定點Ρ 1〜Ρ4及其中央部的測定點Ρ5。在步驟S5 # 中’測定主基板2 〇的所有基板G的測定點Ρ 1〜Ρ 5。在此 ’測疋點Ρ 1〜Ρ 5是容易產生光罩μ與基板G的間隙之部 位’可耢由該測定點ρ丨〜ρ 5的測定來實施容易產生間隙 的部份之測定。 並且’在測定各測定點時，是藉由驅動移動裝置Τ來 使雷射'變位計5栘動於所望的位置，而進行測定。 其次’在步驟S 5中，判定各基板G的測定點ρ丨〜Ρ5 的間隙爲小於或大醜定値（步驟S5)。 -23- (21) (21)1249821 該步驟S5是在控制裝置CONT中進行。在控制裝置 CONT中，規定値會被事先記憶，比較該規定値與間隙測 定値。 藉此，當間隙比規定値更大時（No時），判斷成蒸 鍍不可能，移至步驟 S 6。又，當間隙比規定値更小時（The direction of the P-ray of the light. Then, the laser light reflected by the measurement target unit only after the focus of the laser light is combined is received by the light receiving unit 5 e via the half mirror of the mirror portion 5 b. Thus, 'only after being reflected by the measurement unit In contrast to the laser light reflected by the other portions, the light-receiving portion 5 e can detect the peak of the W-light intensity at the position of the portion to be measured. Therefore, as shown in Fig. 2, the laser beam L irradiated by the light source unit 5a scans the surface to be measured. Then, the reflected light L1' is generated by the focus of the laser light forming surface Ga of the substrate G. The reflected light L1 can be detected by the light receiving portion 5e. Further, when the focus of the laser light L coincides with the position of the adhesion surface Mb of the mask ,, the reflected light L2 is generated, and the reflected light L2 can be detected by the light receiving unit 5 e. Then, the peak-to-edge interval obtained by the reflected light L 1 and the reflected light L 2 is calculated, whereby the distance between the vapor deposition forming surface Ga and the adhesion surface Mb, that is, the gap between the mask Μ and the substrate G can be measured. Such a laser displacement gauge 5 can be used by a general marketer such as LT-8010, LT-81 10, LT-9 5 00 of KEYENCE Corporation. Since the measuring device body is extremely small, it can be disposed in a narrow processing chamber CH (first embodiment of the mask vapor deposition method). Next, the first embodiment of the mask vapor deposition method will be described with reference to the flowchart of FIG. . This mask vapor deposition method is for forming a pixel pattern on the substrate G using the mask vapor deposition apparatus EX described previously. -15- (13) (13) 1249821 First, in order to reset the number of gaps between the mask Μ and the substrate G, the number of times of measurement N = 1 is input (step S1). Here, the number of gap measurements is stored in the control device C Ο N T . Then, the alignment (alignment) of the mask Μ and the substrate G is performed (step S2). In this step S2, the opening mechanism Ma of the mask Μ can be activated by operating a transport mechanism and a positioning mechanism (not shown). It conforms to a predetermined pattern provided on the substrate G. Next, a substrate adhesion process in which the mask Μ is adhered to the substrate G is performed (step S3). In the step S3, the mask Μ is brought close to the thin magnet 4 so that the substrate G can be sandwiched, whereby an attractive force (magnetic force) is generated between the two, and the mask 密 is adhered to the vapor of the substrate G. The surface is formed by plating. Next, a gap measurement process for measuring the gap between the mask Μ and the substrate G is performed (step S 4 ). This step S4 is performed by the above-described laser displacement meter 5. Therefore, the laser light L is irradiated onto the vapor deposition forming surface Ga and the adhesion surface Mb, and the intensity of the reflected light L1, L2 after the reflection is measured, whereby the gap between the vapor deposition surface Ga and the adhesion surface Mb is measured. Then, in this step S4, the moving device τ is measured while moving the laser displacement meter 5 to the front, rear, left, and right. Next, it is determined that the gap between the vapor deposition forming surface Ga and the adhesion surface Mb is smaller or larger (step S5). This step S5 is performed in the control unit CONT. In the control of the crab CONT, the 値 is pre-recorded, and the 値 and gap measurements (14) (14) 1249821 are compared. Thereby, when the gap is larger than the predetermined enthalpy (No), it is judged that the vapor deposition is impossible, and then the process proceeds to step S6. Further, when the gap is smaller than the predetermined 値 (Yes), it is judged that vapor deposition is possible, and then the process proceeds to step S7. In step S6, whether or not the number of gap measurement times is three times is determined in the control unit CONT. In the control unit CONT, the predetermined number of gap measurement times is stored in advance, and the predetermined number of gaps and the number of gap measurement times are compared. Therefore, when the number of gap measurement times is smaller than 3 (No), the process proceeds to step S6A. Further, when the number of gap measurement is 3 (Yes), the process proceeds to step S6B. In step S6A, after adding 1 to the number of gap measurement times N, the process returns to step S2, and the alignment adjustment of the mask Μ and the substrate G is performed again. Further, in step S6, measures for enhancing the adhesion of the mask Μ to the substrate G are taken. For example, the current thin magnet 4 is replaced, and a thin magnet with a strong magnetic force is set. After the step S6B, the process returns to the step S1, and the input of the number of times of measurement Ν = 1 is performed again, and various operations are performed in accordance with the operation flow of the above steps 1 to 6. In step S7, a film formation process in which vapor deposition is performed is performed. Therefore, the vapor deposition material of the vapor deposition source 1 is vaporized, and the vapor deposition material is caused to fly toward the substrate G, and the vapor deposition material is incident only on the exposed portion of the substrate G corresponding to the opening Ma of the mask. Thereby, the vapor deposition material is vapor-deposited on the substrate G in accordance with the pattern of the opening portion Ma to form a thin film. Further, the film thickness of the film is closely managed by the film thickness sensor 2. -17- (15) 1249821 Next, in the state where vapor deposition is performed, a gap measurement process for measuring the gap between the mask Μ and the substrate G is performed (step S8). This step S 8 is performed in the same manner as the previous step 4. Therefore, the laser light L is irradiated onto the vapor deposition forming surface Ga and the adhesion surface Mb' to measure the intensity of the reflected light L1, L2, thereby measuring the gap between the vapor deposition forming surface Ga and the adhesion surface Mb. Further, in this step S8, the mobile device T measures while moving the laser displacement meter 5 to the front, rear, left and right. Next, it is judged that the gap between the vapor deposition forming surface Ga and the adhesion surface Mb is smaller or larger than the predetermined value (step S9). This step S9 is performed in the control unit CONT. In the control unit CONT, the specified 値 is stored in advance, and the specified 値 and gap are measured. If this is not possible, plating is impossible, when Y e s), when the gap is larger than the predetermined value (No), it is judged that the flow is shifted to step S 10 . Further, when the gap is smaller than the predetermined enthalpy (it is judged that vapor deposition is possible, the process proceeds to step S1 1. In the step 丨〇, the baffle 3 shields the upper side of the vapor deposition source 1 to interrupt the vapor deposition process. Returning to step 2, the mask Μ and the substrate G are placed, and various operations are performed according to the operation flow of the above steps 2 to 9. In the step ,1, it is determined whether or not the vapor deposition is finished. It is determined whether or not the film thickness measured by the film thickness sensor 2 has reached a predetermined value. When the film thickness is less than the predetermined enthalpy (No), the process returns to the step 8' while measuring the gap and steaming. In addition, when the film thickness meets the specified -18 - (16) 1249821 値 (Yes), the vapor deposition is finished, so the baffle 3 will shield the upper side of the vapor deposition source 1 'release the vapor mask Μ and the substrate G As described above, in the mask vapor deposition apparatus 及 and the mask vapor deposition method, the substrate adhesion process can be performed by using the thin magnet 4, and the mask Μ and the substrate G can be made. Closely, and using the laser displacement meter 5 to perform the gap measurement process, the measurement is in a closed state Since the mask Μ is gapped with the substrate G, it is possible to detect the floating or peeling of the mask caused by thermal expansion. Further, since the vapor deposition is performed according to the measurement result of the laser displacement meter 5, the mask can be prevented. The gap with the substrate G occurs, and the thin film is vapor-deposited on the substrate G in a state where the mask Μ is adhered to the substrate G. The vapor deposition of the substrate G can be performed with high precision and accuracy through the series of processes described above. A film of a predetermined pattern of the opening portion Ma of the mask Μ. Therefore, it is possible to prevent a problem such as a problem in which a material is mixed with a color of another color as in the related art, and it is possible to achieve an improvement in the yield. Before the vapor deposition, the gap between the mask Μ and the substrate G is measured, so that the film can be vapor-deposited in a state where it is appropriately adhered, and the gap can be measured while measuring the gap 光 between the mask Μ and the substrate G. As a result, the film is formed by vapor deposition. Further, since the vapor deposition is stopped according to the measurement result of the gap between the mask Μ and the substrate G, when the measurement result is abnormal (the gap is large), the shape can be formed without the gap being large. It is a film. Therefore, it is possible to prevent the material from being mixed with pixels of other colors. The method of measuring the gap between the mask and the substrate G is to use the -19-(17) (17) 1249821 laser displacement. Therefore, since the intensity change of the laser light L can be measured as the gap amount between the mask Μ and the substrate G, the gap can be easily measured. Further, since the measurement target is optically measured using a non-contact method, The measurement target is not damaged or destroyed. Further, by using the laser displacement meter 5, the gap between the mask μ and the substrate 测定 is measured, so that the measurement can be performed from the side of the non-formed surface of the film of the substrate G. Therefore, the material of the vapor deposition source 1 does not adhere to the laser displacement meter 5, and the occurrence of measurement error due to adhesion of the material to the laser displacement meter 5 can be prevented. Therefore, the gap between the mask Μ and the substrate G can be well measured. Further, the means for measuring the gap between the mask Μ and the substrate G can be measured by a change in electrostatic capacitance. Thereby, the electrostatic capacitance can be measured as the amount of the gap between the mask Μ and the substrate G, and the gap can be easily measured. Further, since the measurement target is electrically measured using a non-contact method, the measurement target is not damaged or destroyed. In the present embodiment, a mask for vapor deposition is used as the mask Μ. However, for example, a film forming method using a sputtering mask, a CVD mask, or the like can be used. . (Modification of the first embodiment of the mask vapor deposition apparatus) Next, a modification of the first embodiment of the mask vapor deposition apparatus will be described. In the first embodiment of the photomask vapor deposition apparatus described above, the slate 4 is used as the substrate adhesion means, but in the present modification, electromagnet is used. The electromagnet can adjust its magnetic force by the current supplied to the coil, so -20-(18)(18)1249821 can change the adhesion between the mask Μ and the substrate G according to the gap between the reticle Μ and the substrate G. For example, when the gap is formed large, the adhesion force between the mask Μ and the substrate G can be increased by increasing the amount of current supplied to the coil, whereby the gap becomes small and the adhesion can be made strong. Further, in the photomask vapor deposition method in which such an electromagnet is provided, a method of increasing the current supplied to the electromagnet can be employed as a mask adhesion enhancement measure in the step S 6 of the flow chart shown in Fig. 3. Thereby, it is not necessary to perform a magnet exchange operation. β (Second embodiment of the mask vapor deposition apparatus) Next, a second embodiment of the mask vapor deposition apparatus will be described. In the first embodiment of the mask vapor deposition apparatus and the modification thereof, the substrate adhesion means is a thin plate magnet 4 or an electromagnet. However, in the present embodiment, the substrate is bonded to the mask to apply pressure. . Further, in the present embodiment, a description will be given of a portion different from the mask vapor deposition apparatus shown in Fig. 1. Incidentally, the same configurations as those of the previously described embodiments are denoted by the same reference numerals, and the description will be simplified. As shown in Fig. 4, the mask vapor deposition apparatus EX' includes a load applying portion 14 as a substrate adhesion means, and a mask M made of a non-magnetic material. The load applying portion 14 is composed of a weight 15 and a pin 1 6 'elastic member 17 . An opening 15 5 a, 15 b is provided in the weight 15 , the opening 15 5 a is a portion through which the laser light of the laser displacement meter 5 passes, and the opening 15 b is a pin 1 6 - 21 - (19) (19) 1249821 The part of the communication. The pin 16 is disposed so as to be able to be inserted through the through hole 5b, and a contact portion 16a that is in contact with the substrate g is provided at the tip end of the pin 16. The contact portion 16a is made of a resin material such as rubber, and the substrate G is not damaged when it comes into contact with the substrate G. The elastic member 17 is a conventionally elastic member such as a rubber or a spring, and is disposed between the weight 15 and the pin 16 to alleviate the contact of the contact portion 16 a with the substrate G. In the mask vapor deposition apparatus EX, since the configuration including the load-bearing slumber portion 14 is formed, the substrate g and the mask yoke can be surely adhered to each other in the same manner as in the above embodiment. Since it can be adhered by the load of the weight 15, it is not necessary to make the adhesion by the magnetic force. Therefore, a photomask Μ' of a non-magnetic material can be used. Further, in the first and second embodiments of the photomask vapor deposition apparatus described above, the means for adhering the photomask to the substrate G is a magnetic force or a load, but the present invention is not limited thereto. For example, the substrate G and the photomask may be adhered by electrostatic force. The electrostatic mask force is used to cause the mask Μ and the substrate G # 密 者 to apply potentials (+) and (-) having different polarities to the mask Μ and the substrate G, respectively. Thereby, the electrostatic force generated between the mask Μ and the substrate G can be utilized to make the two adhere. In the method of using such an electrostatic force, it is preferable that the surface of the stomach substrate and the mask are easily charged. (Second Embodiment of Photomask Deposition Method) Next, a second embodiment of the mask evaporation method will be described. -22- (20) (20) 1249821 FIG. 5 is a plan view showing a vapor deposition target of a mask vapor deposition by the second embodiment of the mask vapor deposition method. FIG. 6 is a view showing a vapor deposition method. flow chart. Further, the mask vapor deposition apparatus E X described above is used in the mask vapor deposition method. This embodiment is described with respect to a portion different from the flowchart shown in Fig. 3, and the same steps as those in Fig. 3 are denoted by the same reference numerals to simplify the description. As shown in Fig. 5, the vapor deposition target of the present embodiment is a main substrate 20 composed of a plurality of substrates · G. Further, in the mask vapor deposition method of the present embodiment, the main substrate 20 is placed in the mask vapor deposition apparatus EX described above to perform vapor deposition. Further, the flow chart of the mask vapor deposition method of the present embodiment is mainly the same as the mask vapor deposition method (Fig. 3) described above, and only step S4, step S5, and step S6 are different. In step S4, the gap between the mask Μ and the substrate G is measured at a predetermined position in the plane of the substrate G. The predetermined position is the measurement point Ρ 1 to Ρ 4 near the corner portion of the substrate G and the measurement point Ρ 5 at the center portion thereof. In steps S5 to #, the measurement points Ρ 1 to Ρ 5 of all the substrates G of the main substrate 2 are measured. Here, the measurement points Ρ 1 to Ρ 5 are portions where the gap between the mask μ and the substrate G is likely to occur, and the measurement of the measurement points ρ 丨 ρ 5 can be performed to measure the portion where the gap is likely to occur. Further, when each measurement point is measured, the measurement is performed by driving the moving device Τ to cause the laser 'displacement meter 5 to be moved to a desired position. Next, in step S5, it is determined that the gap between the measurement points ρ 丨 Ρ 5 of each of the substrates G is smaller or larger (step S5). -23- (21) (21) 1249821 This step S5 is performed in the control unit CONT. In the control unit CONT, the predetermined 値 is memorized in advance, and the predetermined 値 and gap are measured. Thereby, when the gap is larger than the predetermined value (No), it is judged that the vapor deposition is impossible, and the process proceeds to step S6. Also, when the gap is smaller than the specified 値 (
Yes時），判斷成蒸鍍可能，移至步驟S7。 其次，在步驟S6中，於控制裝置CONT判定間隙測 定次數是否滿3次。在控制裝置C ONT中，間隙測定次數 φ 的規定値會事先被記憶，比較該規定値與間隙測定次數。 藉此，當間隙測定次數小於3時（No時），移至步 驟S6A。又，當間隙測定次數爲3時（Yes時），移至步 驟S 6 C。在步驟S 6 A中，由於實施與先前記載的實施形態 同樣的處理，因此省略其説明。 並且，在步驟S 6 C中，判定基板G是否爲取複數。 藉此，當基板 G未取複數時（No時），移至步驟 S 6B，與先前實施形態同樣取供以強化光罩Μ與基板G的 密著力之措施。又，當基板G爲取複數時（Yes時），移 至步驟6 D。 在步驟S 6D中，如圖5所示，於取複數的例子之9片 的基板G中，判定是否取得良品的基板。 藉此，當未取得良品時（No時），移至步驟 S6B，When it is Yes, it is judged that vapor deposition is possible, and it progresses to step S7. Next, in step S6, the control unit CONT determines whether or not the number of gap measurement times is three times. In the control unit C ONT, the predetermined number of gap measurement times φ is memorized in advance, and the predetermined number of times of measurement and gap measurement is compared. Thereby, when the number of gap measurement times is less than 3 (No), the process proceeds to step S6A. Further, when the number of gap measurement is 3 (Yes), the process proceeds to step S6C. In step S6A, since the same processing as that of the previously described embodiment is performed, the description thereof will be omitted. Further, in step S6C, it is determined whether or not the substrate G is a complex number. As a result, when the substrate G is not taken up in a plural (No), the process proceeds to step S6B, and a measure for enhancing the adhesion between the mask Μ and the substrate G is taken in the same manner as in the previous embodiment. Further, when the substrate G is a complex number (Yes), the process proceeds to step 6D. In step S6D, as shown in Fig. 5, it is determined whether or not a good substrate is obtained in the substrate G of nine samples of the plural example. Therefore, when the good product is not obtained (No), the process proceeds to step S6B.
與先前實施形態同樣取供以強化光罩Μ與基板G的密著 力之措施。又，當取得良品時（Yes時），移至步驟S6E -24- (22) (22)1249821 在步驟S 6 E中’對不良的基板附上標記，在往後的過 程中不處理被標記的基板。在經該步驟s 6 E之後，移至步 驟S 7 ’實施與先前記載的實施形態同樣的處理。 如上述’由於本實施形態是在基板G的角落部附近的 測疋點P 1〜P 4或中央部的測定點p 5的其中至少測定一點 的間隙’因此可測定容易產生間隙的部份之間隙。 又’由於複數個基板G中被判定不良的基板不會在蒸 鑛後的過程中進行處理，因此在蒸鍍過程以後的過程中， 可只製造良品的基板G。 (有機E L裝置的製造方法） 其次’參照圖7來說明有關使用上述光罩蒸鍍裝置及 光罩蒸鍍方法來製造主動型全彩有機E L裝置的方法。 圖7是表示使用本發明之有機EL裝置的製造方法的 説明圖。 首先’準備低温多晶矽TFT基板30，利用UV及臭氧 來洗浄其IT031的表面，且IT〇的功函數會提高4.5eV〜 5.2eV (參照圖7的（〇 )。 其次’以蒸鍍材料不會附著於不寄與發光部的部份之 方式，一邊藉由蒸鍍光罩來遮斷，一邊使電洞注入材料32 的銅酞菁（C u P c )成膜1 〇 n爪，使電洞輸送材料3 3的4， 4‘-雙-[N- ( 1-萘基）-Ν·苯胺基]聯苯（NPB)成膜6〇_之 後’取去蒸鍍光罩（參照圖7的（b ))。 其次’在上述光罩蒸鍍裝置EX内配置低温多晶砂 -25- (23) (23)1249821 TFT基板3 Ο，使用僅開口於發出綠色光的畫素部份之高精 細的蒸鍍光罩Μ，以蒸鍍光罩Μ的開口部Ma能夠一致於 綠色發光畫素的位置之方式來正確對準，穩靜地將基板3 0 放置於蒸鍍光罩Μ上。 其次，在基板3 0上穩靜地放置薄板狀的橡膠磁石4， 消除蒸鍍光罩Μ與基板3 0的間隙。並且，使用雷射變位 計5越過形成於薄板磁石4的開口部4a來測定金屬光罩 Μ與基板 3 0的間隙，若間隙爲規定尺寸以下（例如， 1 5 μηι以下），則開始蒸鍍。若間隙爲規定尺寸以上，則 一度重新對準，穩靜放置薄板磁石，再度進行測定，確認 無蒸鍍光罩Μ與基板3 0的間隔之後進行蒸鍍。 在此狀態下，以1 〇 〇 : 1的蒸鍍速度比，3 0 urn的膜厚 ，共蒸鍍綠色發光材料的主材；三（8-喹啉羥基-N1，08 )-鋁（Alq )與摻雜材；N，N-二甲基喹吖酮（DMQA ) ’藉此來形成綠色發光層3 4 G。 在此共蒸鍍中也進行間隙測定的監控，確認間隙爲規 定尺寸以下。若間隙爲規定尺寸以上’則馬上中斷蒸鍍， 取下蒸鍍光罩Μ重新對準，穩靜地放置薄板磁石4，再度 進行測定，確認無蒸鍍光罩Μ與基板3 0的間隙之後再開 始蒸鍍。 又，使用僅開口於發出紅色光的畫素部份之精密的高 精細蒸鍍光罩Μ，以蒸鍍光罩Μ的開口部Ma能夠一致於 紅色發光畫素的位置之方式來正確對準’穩靜地將基板3 0 放置於光罩Μ上。其次，在基板3 0上穩靜地放置薄板狀 -26- (24) 1249821 的橡膠磁石4，消除蒸鍍光罩Μ與基板3 Q的間隙。 又，使用雷射變位計5越過形成於薄板磁石4的開口 部4 a來測定金屬光罩Μ與基板3 0的間隙，若間隙爲規定 尺寸以下，則開始蒸鍍。在此狀態下，以1 〇 〇 : 5 : 1的蒸 鍍速度比，40 nm的膜厚，共蒸鍍紅色發光材料的主材； 三（8-D奎啉羥基-N1，08 )-鋁（Alq )與摻雜材；紅焚_ 及摻雜材的DCJTB，藉此來形成紅色發光層34R。當妖， 蒸鍍時是與綠色時同樣必須進行間隙的監控。最後，丨吏 僅開口於發出藍色光的畫素部份之高精細蒸鍍光罩M，& 蒸鍍光罩Μ的開口部Ma能夠一致於藍色發光畫素的位置 之方式正確地對準，穩靜地將基板3 0放置於蒸鍍光罩M 上。 其次，在基板上穩靜地放置薄板狀的橡膠磁石，消除 蒸鍍光罩與基板的間隙。並且，與綠色及紅色發光材料蒸 鍍時同樣使用雷射變位計5越過形成於薄板磁石4的開口 部4 a來測定金屬光罩M與基板3 〇的間隙，若間隙爲規定 尺寸以下，則開始蒸鍍。 在此狀態下，1 0 0 : 1的蒸鑛速度比，2 0 n m的膜厚， 共蒸鍍監色發光材料的主材；D P V B i與摻雜材；B c z V B i， 耢此來形成藍色發光層3 4 B。此刻同樣在蒸鍍時必須進行 間隙的監控。 如此，拿掉光罩，形成發光層會被正確塗佈的有機 EL裝置（參照圖7的（〇 )。 其次’以蒸鍍材料不會附著於不寄與發光部的邰份之 -27- (25) (25)1249821 方式’一邊藉由蒸鍍光罩來遮斷，一邊使電子輸送材料的 一（8 - 〇圭啉經基-N 1 ’ 0 8 )-金呂（A 1 q )成膜3 0 n m，藉此來 形成電子輸送層3 5。又，使電子注入材料的氟化鋰成膜 Inm ’藉此來形成電子注入層36。又，藉由蒸鍍2〇〇nm的 A1來形成陰極3 7。（參照圖7的（d ))。 爲了從溼氣，氧氣來保護如此形成的有機E L裝置， 而於形成供以放入乾燥劑3 8的凹陷的密封玻璃3 9中放進 乾燥劑3 8，在外周塗佈接著劑，貼附於低温多晶矽T F τ ^ 基板（參照圖7的（e ))，完成面板製造過程。 由於以本發明之有機EL裝置的製造方法來製造的有 機電激發光裝置無蒸鍍光罩的間隙，因此發光色不會混雜 ’非吊鮮議’可以非常局的良品率來製造。 如上述，不會有因爲光罩浮起而造成材料混入其他色 的畫素而導致產生發光色的污點等不良情況，因此可以非 常1¾的良品率來製造有機EL裝置。 此外，並非限於有機EL裝置，亦可使用於色素蒸鍍 馨 法之液晶用彩色濾光片的製造或有機電晶體等的製造。 (電子機器） 其次，說明有關具備上述實施形態的有機EL裝置之 電子機器的例子。 圖8 ( a )是表示行動電話之一例的立體圖。在圖8 ( Ο中5符號1 0 0 0是表示行動電話本體，符號1 0 01是表 示使用上述有機E L裝置的顯示部。 -28- (26) (26)1249821 圖8 ( b )定表不手錶型電子機器之一例的立體圖。在 圖8(b)中，符號11〇〇是表示手錶本體，符號li〇i是袠 示使用上述有機E L裝置的顯示部。 圖8 ( c )是表示打字機，個人電腦等攜帶型資訊處王里 裝置之一例的立體圖。在圖8 ( c )中，符號1 2 0 〇是表示 資訊處理裝置，符號1 2 Q2是表示鍵盤等的輸入部，符號 1 2 0 4是表示資訊處理裝置本體，符號12〇6是表示使用 述有機EL裝置的顯示部。 由於圖8(a)〜（c)所示的電子機器爲具備上述實 施形態的有機EL裝置，因此可形成具備具有不會混色的 畫素且可進行鮮繫的畫像顯示的顯示部之電子機器。 又，電子機器並非限於上述行動電話，亦可適用於各 種的電子機器。例如，亦可適用於筆記型電腦，液晶投$ 機，多媒體對應的個人電腦（p c )及工程工作站（E w § )，呼叫器，打字機，電視，取景器型或監視器直視型的 攝影機，電子記事本，計算機，衛星導航裝置，P 〇 S ^ $ ，及具備觸控板的機器等電子機器。 [圖式簡單說明】 圖1是表示本發明之一實施形態的光罩蒸鍍裝β % _ 略構成的側剖面圖。 圖2是表示本發明之一實施形態的光罩蒸鍍裝置自勺^ 部構成的側剖面圖。 圖3是表示本發明之一實施形態的光罩蒸鍍方法的流 -29- (27) 1249821 程圖。 圖4是表示本發明之一實施形態的光罩蒸鍍裝置的要 部構成的側剖面圖。 圖5是表不本發明之一實施形態的光罩黑鑛方法的蒸 鍍對象的平面圖。 圖6是表示本發明之一實施形態的光罩蒸鍍方法的流 程圖。 圖7是用以說明本發明之一實施形態的有機EL裝置 馨 的製造方法的過程圖。 圖8是表示具備本發明的有機EL裝置的電子機器。 【主要元件符號說明】 1…蒸鍍源（材料源，薄膜形成手段） 3…檔板（薄膜形成手段） 4…薄板磁石（基板密著手段） 5…雷射變位計（間隙測定手段） · 1 4…荷重施加部（基板密著手段） G，3 0…基板 Μ…光罩 L...雷射光 Τ…移動裝置（移動手段） EX，ΕΧ…光卓蒸鍍裝置（薄膜形成裝置） CONT…控制裝置（控制手段） -30-In the same manner as the prior embodiment, measures are taken to strengthen the adhesion between the mask Μ and the substrate G. When the good product is obtained (Yes), the process proceeds to step S6E - 24 - (22) (22) 1249821. In step S 6 E, 'the mark is attached to the defective substrate, and the subsequent process is not processed. The substrate. After the step s 6 E, the process proceeds to the step S 7 ' to perform the same processing as the previously described embodiment. As described above, in the present embodiment, at least one point of measurement is measured at the measurement points P1 to P4 in the vicinity of the corner portion of the substrate G or the measurement point p5 at the center portion. Therefore, it is possible to measure the portion where the gap is likely to occur. gap. Further, since the substrate which is judged to be defective in the plurality of substrates G is not processed in the course of the vapor deposition, only the substrate G of the good product can be manufactured in the process after the vapor deposition process. (Manufacturing Method of Organic E L Device) Next, a method of manufacturing an active full color organic EL device using the above-described mask vapor deposition device and mask vapor deposition method will be described with reference to Fig. 7 . Fig. 7 is an explanatory view showing a method of manufacturing the organic EL device of the present invention. First, 'prepare the low-temperature polysilicon TFT substrate 30, and clean the surface of IT031 with UV and ozone, and the work function of IT〇 will increase by 4.5eV to 5.2eV (refer to (〇) in Figure 7. Secondly, the evaporation material will not The copper phthalocyanine (C u P c ) of the hole injecting material 32 is formed into a film 1 〇n claw by the vapor deposition mask while being attached to the portion that is not to be placed on the light-emitting portion, so that electricity is generated. The hole transporting material 3 3 of 4, 4'-bis-[N-(1-naphthyl)-fluorenylanilinyl]biphenyl (NPB) is formed into a film of 6 〇_ after 'removing the reticle (refer to Figure 7) (b)) Next, 'the low-temperature polycrystalline sand-25-(23)(23)1249821 TFT substrate 3 is placed in the mask vapor deposition apparatus EX, and only the pixel portion that emits green light is used. The high-definition vapor deposition mask 正确 is configured such that the opening portion Ma of the vapor deposition mask 正确 can be aligned correctly in accordance with the position of the green light-emitting pixel, and the substrate 30 is stably placed on the vapor deposition mask Μ Next, the thin-plate-shaped rubber magnet 4 is stably placed on the substrate 30, and the gap between the vapor-deposited mask Μ and the substrate 30 is eliminated. Moreover, the laser displacement gauge 5 is used to form the thinner The gap between the metal mask Μ and the substrate 30 is measured in the opening 4a of the magnet 4, and if the gap is equal to or smaller than a predetermined size (for example, 15 μm or less), vapor deposition is started. If the gap is equal to or larger than the predetermined size, the gap is once again The sheet magnet is placed in a stable state, and the measurement is performed again. It is confirmed that the vapor deposition mask is not separated from the substrate 30, and then vapor deposition is performed. In this state, the evaporation rate ratio of 1 〇〇: 1 is 3 0 urn. Film thickness, co-evaporation of the main material of green luminescent material; tris(8-quinoline hydroxy-N1,08)-aluminum (Alq) and doped materials; N,N-dimethylquinacridone (DMQA)' In this co-deposition, the gap measurement is monitored to confirm that the gap is equal to or less than a predetermined size. If the gap is equal to or larger than the predetermined size, the vapor deposition is immediately interrupted, and the vapor deposition mask is removed. ΜRealign the slab, place the thin-plate magnet 4 steadily, and measure again to confirm that there is no gap between the vapor-deposited reticle Μ and the substrate 30, and then start vapor deposition. Also, use only the pixel portion that emits red light. Precise high-precision vapor deposition mask 以 to vaporize the opening of the mask Ma can correctly align the position of the red illuminating pixel to 'steadyly place the substrate 30 on the reticle. Secondly, place the thin plate on the substrate 30 -26- (24) The rubber magnet 4 of 1249821 eliminates the gap between the vapor deposition mask Μ and the substrate 3 Q. Further, the laser ray Μ and the substrate 30 are measured by using the laser displacement finder 5 over the opening 4 a formed in the thin magnet 4 . In the gap, if the gap is less than or equal to the predetermined size, vapor deposition is started. In this state, the main material of the red luminescent material is vapor-deposited at a deposition rate ratio of 1 〇〇: 5:1 and a film thickness of 40 nm; (8-D quinolinylhydroxy-N1,08)-aluminum (Alq) and a dopant; red-burning_ and a DCJTB of a dopant, thereby forming a red light-emitting layer 34R. When the demon, the evaporation is the same as the green, the gap must be monitored. Finally, the high-definition vapor deposition mask M that opens only in the pixel portion that emits blue light, and the opening portion Ma of the vapor deposition mask 能够 can be correctly aligned with the position of the blue light-emitting pixel. The substrate 30 is placed on the vapor deposition mask M in a stable and steady manner. Next, a thin plate-shaped rubber magnet is stably placed on the substrate to eliminate the gap between the vapor deposition mask and the substrate. In the same manner as in the case of vapor deposition of the green and red light-emitting materials, the laser displacement mirror 5 is used to measure the gap between the metal mask M and the substrate 3 by using the opening 4a formed in the thin-plate magnet 4, and if the gap is equal to or smaller than the predetermined size, Then evaporation is started. In this state, the ratio of steaming rate of 1 0 0:1, the film thickness of 20 nm, co-evaporation of the main material of the luminescent material; DPVB i and the doping material; B cz VB i, 耢Blue luminescent layer 3 4 B. At this moment, it is also necessary to monitor the gap during vapor deposition. In this way, the photomask is removed, and an organic EL device in which the light-emitting layer is correctly applied is formed (refer to (〇) of FIG. 7. Secondly, the evaporation material does not adhere to the portion -27- not attached to the light-emitting portion. (25) (25) 1249821 The method of 'interrupting one side of the electron transporting material by the vapor deposition mask (8 - 〇 〇 经 经 - - N 1 ' 0 8 ) - Jin Lu (A 1 q ) The film formation was 30 nm, whereby the electron transport layer 35 was formed. Further, lithium fluoride of the electron injecting material was formed into a film Inm' to thereby form the electron injecting layer 36. Further, by vapor deposition of 2 〇〇 nm A1 is formed to form the cathode 37. (Refer to (d) of Fig. 7) In order to protect the thus formed organic EL device from moisture, oxygen, and to form a recessed sealing glass for the desiccant 38. The desiccant 3 is placed in the middle, and an adhesive is applied to the outer periphery, and is attached to the low-temperature polycrystalline TF τ ^ substrate (refer to (e) of FIG. 7) to complete the panel manufacturing process. The manufacturing method of the organic EL device of the present invention The organic electroluminescent device manufactured by the device does not have the gap of the vapor deposition mask, so the luminescent color does not mix. As a result of the above, there is no problem that the material is mixed with pixels of other colors due to the floating of the mask, and the stain of the luminescent color is generated, so that the organic EL device can be manufactured at a very good yield. It is not limited to the organic EL device, and it can also be used for the production of a color filter for liquid crystals of a dye vapor deposition method or the production of an organic transistor. (Electronic device) Next, an organic EL device having the above-described embodiment will be described. Fig. 8 (a) is a perspective view showing an example of a mobile phone. In Fig. 8 (wherein the 5 symbol 1 0 0 0 indicates the mobile phone body, and the symbol 100 01 indicates the display using the above organic EL device). -28- (26) (26) 1249821 Figure 8 (b) A perspective view of an example of a watch-type electronic device. In Figure 8(b), the symbol 11〇〇 indicates the watch body, symbol li〇i The display unit using the above-described organic EL device is shown in Fig. 8. (c) is a perspective view showing an example of a portable device such as a typewriter or a personal computer. In Fig. 8 (c), the symbol 1 2 0 〇 is Representation In the processing device, the symbol 1 2 Q2 is an input unit for a keyboard or the like, the symbol 1 2 0 4 indicates the main body of the information processing device, and the symbol 12〇6 indicates a display unit using the organic EL device. Since FIG. 8(a)~( The electronic device shown in the above-mentioned embodiment is an electronic device including the above-described embodiment. Therefore, an electronic device including a display unit having a pixel that does not mix colors and can display a fresh image can be formed. Mobile phones can also be used in a variety of electronic machines. For example, it can also be applied to a notebook computer, a liquid crystal projector, a multimedia corresponding personal computer (PC) and an engineering workstation (Ew §), a pager, a typewriter, a television, a viewfinder type or a monitor direct view type camera. Electronic notebooks, computers, satellite navigation devices, P 〇S ^ $, and electronic machines with touchpads. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing a schematic configuration of a mask vapor deposition apparatus β % _ according to an embodiment of the present invention. Fig. 2 is a side cross-sectional view showing the configuration of a mask vapor deposition apparatus according to an embodiment of the present invention. Fig. 3 is a flow chart -29-(27) 1249821 showing a mask vapor deposition method according to an embodiment of the present invention. Fig. 4 is a side cross-sectional view showing the configuration of a main part of a mask vapor deposition apparatus according to an embodiment of the present invention. Fig. 5 is a plan view showing a vapor deposition target of a mask black ore method according to an embodiment of the present invention. Fig. 6 is a flow chart showing a mask vapor deposition method according to an embodiment of the present invention. Fig. 7 is a process chart for explaining a method of manufacturing an organic EL device according to an embodiment of the present invention. Fig. 8 is a view showing an electronic apparatus including the organic EL device of the present invention. [Description of main component symbols] 1...vapor deposition source (material source, film formation means) 3... baffle (film formation means) 4... thin plate magnet (substrate adhesion means) 5... laser displacement gauge (gap measurement means) · 1 4... load application unit (substrate adhesion means) G, 3 0... substrate Μ... reticle L... laser ray... mobile device (moving means) EX, ΕΧ... optical vapor deposition device (film forming device) ) CONT...Control device (control means) -30-