TWI244962B - Method and apparatus for combining composite electroplating and surface abrasive machining - Google Patents

Abstract

The present invention relates to a method and apparatus that combines composite electroplating and surface abrasive machining comprising a polishing device, a plating bath, a metal material and a power supply device. The polishing device has a composite electroplating layer to carry out the surface abrasive machining on a workpiece. The plating bath accommodates an electrolyte with a certain amount of abrasives, and the electrolyte is used to continuously electroplate the polisher in the polishing device to form the composite electroplating layer during the polishing process. The metal material is used to provide the metal ion required by the electroplating process. The power supply device is used to provide the electric current required by the composite electroplating process, and to cause the metal material to release the metal ions. The metal ions with the abrasives in the electrolyte commonly deposit on the polisher surface in the polishing device to form the electroplating layer. Hence, this invention has the ability to repair the worn surface of the polisher by itself, and to provide the fresh and sharp abrasives. In other words, it is not necessary to replace the polisher and to use the dressing equipment and supplies that the polisher remains an excellent machining performance.

Description

1244962 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method and device for processing surface abrasive grains, particularly a method and device for combining composite electroplating and surface abrasive particle processing. [Previous technology] The conventional surface abrasive grain processing methods are divided into the categories of grinding, lapping and lapping, and polishing. The grinding system uses the so-called grinding wheel or grinding stone. The grinding system is used A few micrometers of abrasive grains and hard abrasive discs. Polishing system uses fine abrasive grains and soft abrasive discs (also known as polishers) below micron. The grinding mechanism is based on the solid cutting action Workpiece surface. Grinding guardian machine (manufacturing: using free gram ploughing (dry) and rolling (wet) cutting action to process the workpiece surface. Polishing processing mechanism, except for free In addition to the plowing action of abrasive grains, the friction of abrasive grains or polishers on the surface of the workpiece causes the smooth plastic flow surface of the surface, and the chemical action of abrasive grains or machining fluids on the surface of the workpiece causes the film to fall off. With processing The enhanced etching effect of the liquid on the surface of the workpiece causes the surface of the workpiece to be removed in small amounts. Basically, the structure of the grinding machine and polishing machine are similar. Figure 1 shows the ultra-precision research of conventional wafers. Schematic diagram of the device (such as Sakurai Ryoman et al., "Ultra-precision Machining of Ceramics,", published by Nikkan Shimbun, 1983 'p.270) ° The grinding device 10 includes a grinding block 11, and a dresser (dreSSer) 12 , A dresser guide 13, a processing load 14, a cast iron disk 15, and a circulation pipeline 16. The wafer 17 is adhered to the stainless steel polishing block η, and the polishing block π is placed in the dresser 12 Will follow the turn of the cast iron plate 15

O: \ 90 \ 90659.DOC 1244962 can rotate automatically. Suspended machining fluid 18 containing abrasive grains of a certain particle diameter is supplied to the surface of the cast iron plate 5 by the circulating pipe 16 and the processing load 4 is adjusted to perform polishing processing of the crystal circle 7. In another application, chemical mechanical polishing (CMp) can be performed if the cast iron disc 15 is replaced with a brass disc, with artificial leather affixed, and alkaline colloidal silica is used. Referring to FIG. 2, a schematic diagram of a conventional wafer polishing apparatus is shown (such as Tomi Toro et al. '"Semiconductor Flattening CMP Technology", Industrial Survey Publication, 1999' ρ · 65). The polishing device 20 includes a pressure head 21, a disc 22, a polishing pad conditioner mechanism 23, and a processing fluid supply mechanism 24. A packing material 26 is provided under the pressure head 21, and a polishing pad 27 is provided at the upper end of the disc 22. The polishing pad trimming mechanism 23 is used to trim the polishing. Pad 27, the processing fluid supply mechanism 24 is used to supply processing fluid 28 to the polishing pad 27. The wafer 25 is adhered to the pad material 26 for rotation and shaking, and a polishing load is applied to the polishing pad 27 rotating at a constant speed by air pressure to perform polishing processing of the wafer 25. In order for the abrasive processing tool to ensure its processing capability and maintain stable and reproducible processing characteristics, the customary practice is as follows. A finishing device 12 is added to the polishing device 10 in FIG. 丨, and a polishing device 20 is added to the polishing device 20 in FIG. 2. Attaching polishing pad dressing mechanism 23. Referring to FIG. 3 ′, a schematic diagram of an electrolytic dressing method is described. The centrifugal turning device 30 includes a disk 31, a disk 33 ', a current supplier 34, a cooling liquid supply mechanism 35, and a processing liquid supply mechanism 36. The disc 33 is provided with a workpiece 37 to be added. The lower end of the disc 31 is provided with a grinding stone 32, which is made of cast iron

O: \ 90 \ 90659.DOC 1244962 Fiber composite diamond abrasive grain. The disc 31 is rotated and moved in the horizontal direction by external driving, and the workpiece 37 is surface-grinded by the grinding stone 32. The cooling liquid supply mechanism 35 is used to supply a cooling liquid. The processing fluid supply mechanism 36 is used to supply a processing fluid. The positive pole of the current supply 3 * is electrically connected to the grinding stone 32 by a carbon brush 341, and the negative pole of the current supply 34 is electrically connected to a metal piece 342, which is placed near the surface of the grinding stone 32. When a processing fluid flows between the grinding stone 32 and the metal piece 342 and a DC electric field is applied, the surface of the grinding stone 32 can be formed while iron atoms are dissolved due to electrolytic action during grinding of the workpiece 37. Non-conductive film. This causes the diamond abrasive grains to maintain a certain amount of protrusion, thereby being able to grind the surface of the workpiece 37. This method is a method in which electrolytic dressing and grinding 2 are performed simultaneously. In addition, there is still a method for grinding silicon wafers using the electrophoretic phenomenon of ultrafine abrasive grains (Y · Tani et al., Grinding silicon wafers using the electrophoretic phenomenon of ultrafine abrasive grains ", Japan Proceedings of the Institute of Mechanical Engineering (c), ν〇1 · 64, No. 625, 1998 · 9), the processing mechanism is similar to the Elid grinding method. + To Youm々 士> Α 工 y ', or The problem lies in the fact that the processing fluid of the electrophoretic grinding method is colloidal silica. Various processing devices have been developed according to the principle of the above-mentioned Elid grinding method. For example, in the electrolyte of a chelating agent, When electricity is applied between the negative electrode of the grinding disc and the positive electrode of the copper film of the workpiece, the copper oxide protrusions on the surface of the copper film can be processed (Republic of China Patent Bulletin No. 55, 503475, and 507318). The invention of electricity or contact in mines or money (ROC Patent Bulletin No. 504796), in the "Electric: Withdrawal" method, the invention of "Guang Mo" (Republic of China: =

O: \ 90 \ 90659.DOC 1244962 51647!), The invention of a method and device for positioning and holding semiconductor workpieces in an electropolishing or electroplating method (Republic of China Patent Publication No. 43〇919). The processing tools in the above various surface abrasive grain processing methods, such as the cast iron plate 15 'of Fig. 丨 the polishing pad 27 of Fig. 2 or the grinding stone 32 of Fig. 3, will be consumed during the processing process, so they are all Are consumables and must be replaced after a period of use. In addition, these tools must be trimmed with a dresser to maintain the sharpness of these tools. Therefore, it is necessary to provide an innovative and progressive surface abrasive particle processing method and device to solve the above problems. [Summary of the Invention] 〃The present invention < The purpose of the present invention is to provide a method of combining composite electroplating and surface abrasive grain processing, using a polisher as a negative electrode and a metal material as a positive electrode, in a plating solution containing a certain amount of dispersed abrasive particles, applying A DC electric field is used to perform composite plating of the polisher and at the same time to perform abrasive grain processing on the surface of the workpiece, thereby eliminating the need to replace the polisher and the use of a dresser. Moreover, the processing rate of this method is equivalent to that of the conventional mechanochemical polishing method and chemical mechanical polishing method ', and the surface roughness after processing is up to the nanometer level, and the flatness is also up to the micrometer level. Another object of the present invention is to provide a device 'combining composite electric ore and surface abrasive grain processing' for surface abrasive grain processing of a workpiece, the device includes a light remover, a plating tank, and a metal material. And-power two reactor. ^ The polisher has a composite electroplated layer for surface abrasive grain processing of the workpiece. The content of the electroplating tank-containing quantitatively dispersed abrasive particles: electroplating solution, the electroplating solution is used to perform surface force on the workpiece by the polisher

O: \ 90 \ 90659 DOC -10- 1244962 One-time-over-performance composite plating of the polisher, so that the polisher forms the composite plating layer. The metal material is used to provide metal ions required in the composite plating process. The power supply is used to provide the enveloping flow during the composite electroplating process, so that the metal material releases that the metal ions and the abrasive particles in the electric clock liquid are deposited on the polisher to form a composite electroplating layer. . [Embodiment] Referring to FIG. 4, a schematic diagram of a device according to a preferred embodiment of the present invention is shown. The device 40 for combining composite electroplating and surface abrasive grain processing is used to perform surface abrasive grain processing (such as polishing, polishing, or grinding) on a workpiece (for example, a wafer) 45, and includes a processing The tool assembly 41, a plating tank 42, a metal material 43, the source supply state assembly 44, a clamp assembly 46, and a circulation stirrer assembly 47. The processing tool assembly 41 includes a disc 411 and a disc rotating shaft 412. The disc 411 has a composite plating layer (also referred to as a polisher) 413 to perform surface abrasive grain processing on the workpiece 45. The disc rotating shaft 412 is connected to the disc 411. The disc rotating shaft 412 is rotated by external driving, and drives the disc 411 to rotate, so that processing can be performed. The plating tank 42 contains a plating solution 421 containing a predetermined number of dispersed abrasive particles, the processing tool assembly 41, and the workpiece 45. The plating solution 421 is used in the surface processing of the workpiece 45 by the processing tool assembly 41, and the polishing tool 413 on the disc 411 is continuously composite-plated to form the composite plating layer 41 3. The material of the metal and abrasive grains in the composite plating layer 413 is a conventional composite plating technology. The metal material 43 is located in the plating tank 42 and is used to provide metal ions required for the composite electric O: \ 90 \ 90659.DOC -11-1244962. The power supply assembly 44 includes a power supply 441, a variable resistance state 442, and a carbon brush 443. The power supply 441 is used to provide the electric current in the composite plating. The positive electrode is electrically connected to the metal material 43. The negative electrode is electrically connected to the disc shaft 412 by the carbon brush 443, so that the metal material 43 The released metal ions and the abrasive grains of the electroplating solution sink together with the light receiver 413 on the circle | 411 to form the composite electroplated layer 413. ▲ Yes, the writing resistance is 442, which is used to adjust the current provided by the power supply 441. The fixture assembly 46 includes a fixture 461, a spherical bearing 462, a work piece shaft 463, and a pin 464. The fixture 461 is used to carry the workpiece 45. The spherical bearing 462 is connected to the jig 461, and is used to make the surface of the workpiece 45 and the surface of the grinding disc 411 abut. The workpiece rotation shaft 4 6 3 is connected to the spherical bearing 462, and a machining load is applied to the surface of the workpiece. The workpiece rotation shaft 463 is rotated by external driving. The pin 464 is used to engage the jig 461 and the workpiece rotating shaft 463, so that the jig 461 can be processed simultaneously with the rotation of the workpiece rotating shaft 463. The circulating stirring assembly 47 includes a stirrer 471, a plating solution recovery tank 472, a pump 473, and a silicone tube 474. The agitator 471 is used to agitate the plating solution 4 2 1 in the electric clock groove 42. The bell liquid recovery tank 4 7 2 is used to recover the plating solution 421. The pump 473 is used to convey the plating solution 421 to the plating tank 42. The silicone tube 474 is connected to the plating tank 42, the plating solution recovery tank 472, and the pump 473. The following examples are used to explain the present invention in detail, but it does not mean that the present invention O: \ 90 \ 90659.DOC -12-1244962 is limited to the content disclosed in these examples. Examples 1 to 6: In all examples, the disc 411 is a pure copper disc with a geometric shape of 100 mm in outer position and 10 mm in thickness. Before electroplating, the surface of the disc was ground with 800-2000 grit sandpaper, then pickled and dried. On the other hand, the workpiece 45 is a silicon wafer, and the geometry of the test piece is 40 mm in outer diameter and 0.525 mm in thickness, which is taken from the crystal direction of semiconductors < 100 > N-type 4 inch silicon wafer material. Mourning, plating the circle

In the following embodiments, there are two types of plating methods, one is pure tin (Sn) plating and the other is tin-based alumina abrasive grains (Sn_A1203) composite plating. The composition of the electroplating bath used in this pure tin plating station is as follows: potassium stannate (KjnO3) ·· 22〇g / hydrogen potassium (KOH): 22 g / 1, potassium acetate (CH3C〇k): 1〇g / 1, peroxy "

Lice bait 202) · 1.5 ml / l. The electrolyte used in the tin-based alumina abrasive particle composite plating only added ίο wt% of alumina (A12〇3, average particle size 0.3 · "as the dispersed abrasive particles, and the rest of the components were the same as those of the pure _ The electric forging fluid is the same as the metal material 43 in this kind of clock. The metal material 43 is pure tin material. Then the surface of the workpiece 45 is processed by the disc 411, and the circle is continuously electroplated on the surface. Plate 411, so that the surface thereof is formed with a plating layer as a polisher (p0Hsher). Referring to the watchmaker, it shows the experimental conditions of Example 其中, where the actual copper plating: the plating layer is pure tin metal, and No abrasive grains were added during the polishing process and no electric ore was performed at the same time. Example 2 differs from Example 1 only in that the electric ore layer on its copper plate is a tin-based hafnium oxide composite ore layer.

O: \ 90 \ 90659.DOC -13- 1244962 The plating layer is pure tin metal, and it is also plated at the same time. Real series = _ with added abrasive particles, but no plating layer is tin-based aluminum alumina mill < • Electrical coating after each layer of particles. The electroplating layers of Example 5 and tin are all tin A g, which is the same as that on the copper plate of Example 6. The aluminum alloy composite plating on the copper plate of the example 6 is performed, and the abrasive grains are simultaneously plated, especially if the current is added to the plate. 5 places are only for electroplating during polishing. Example Electric layer (polishing device) Table 1 ·· Experimental conditions of Examples 1 to 6 Dispersed abrasive particles in plating solution Current density during polishing (A / dm2)

With reference to FIGS. 5 and 6, FIG. 5 Gu + 香 &, / ~ "The relationship between the thickness of the key bond layer (also known as the polisher) and the polishing time on the copper plate surface of Examples 1 to 6, and Figure 6 shows Examples 1 to 1 The graph of the relationship between the removal amount of Shishi wafer and the polishing time. The symbol △ represents Example 1 '〇 represents Example 2, ▲ represents Example 3, · represents Example 4, _ represents Example 5, and ♦ represents Example 6. In Figure 5 In the case where the polisher is a Sn layer and a Sn-Al203 composite clock layer and is polished in ^ electroplating solution (example 电) or electric ore solution (examples 3 and 4) added with eight abrasive grains for round polishing At the same time, the increase of the thickness time of the money layer and the decrease of the water f indicate that the polisher will gradually wear out during the currentless polishing process, so that the polisher has a fixed life and must be replaced with a new one. Experiment of simultaneous polishing of composite electric money, that is, polisher

O: \ 90 \ 90659.DOC 1244962 composite coating and applying different current densities of 1.68A / dm (Example 5) and 0.2 8A / dm2 (Example 6) in the A12〇3 bath for simultaneous polishing of composite power ore Shi Xi wafer situation. The relationship between the thickness of the ore layer and the simultaneous polishing time of the power ore showed a significant linear increase at a current density of 1.68A / dm2, and a non-significant linear increase at .0, .28A / dm2. This means that, as mentioned in the previous polishing knowledge, even if the light carrier is worn, it will be repaired at the same time in the case of simultaneous composite power mining. Especially under the condition of current density of 28A / dm2, the amount of wear and repair of the polisher almost reached a balance with each other. This means that the life of the phosphor is almost infinite. On the other hand, under the same experimental conditions as in Figure $, under the same experimental conditions as in Figure $, the relationship between the average removal amount and polishing time of [ΛΑ T 1 乂 xi 曰 0 wood 枓] showed a linear increase. In particular, the average removal of hard wafers in the case of simultaneous polishing of composite electric clocks (Examples 5 and 6) is large. This is due to the continuous generation of new and sharp polishing layers by the polisher. Referring to FIG. 7, under the conditions of different pastes you 丨 γ yushi 4 丨 J Ling example, the rate of change in the thickness of the plating layer of the polisher and the rate of removal of the Shi Xi wafer, where the bar graph above shows the power ore Layer thickness change rate. The bar graph below shows the Shi Xi wafer removal rate. As shown in Figures 5 and 6, the thickness of the bell layer, the amount of sand wafer removal, and the polishing time all show a linear relationship. The slope of this linear relationship is the rate of change in the thickness of the coating or the rate of circle removal. In order to discuss in detail the relationship between various experimental conditions and the change of the thickness of the ore layer or the removal rate of the Shixi wafer, the results of Fig. 5 and Fig. 6 are arranged into 2 as Fig. 7. It can be seen from FIG. 7 that under the condition of no current and plating solution (examples 丨 and η plating (the thickness of the coating of the polisher of example υ minus = called the composite recording layer (example 2)), but its removal rate on the circle It is small. And these two polishers are adding tin ore liquid from 〇03 abrasive grains.

O: \ 90 \ 90659.DOC 15-1244962 (Examples 3 and 4) has a smaller reduction rate of coating thickness than the former, but its removal rate for silicon wafers is rather large. On the other hand, in the case of so-called composite electroplating and simultaneous polishing in a tin bond solution that is energized and added with Al203 abrasive grains (Examples 5 and 6), the polishing layer of the polisher increases and the removal rate of the silicon wafer increases rapidly. In particular, when the current density is large, the plating increase rate and silicon wafer removal rate are both greater. In terms of fixed dollars, it is worth noting that the silicon wafer removal rate in the same Sn_A1203 polisher and the addition of Al2O3 abrasive plating solution for simultaneous electroplating and polishing (Examples 5 and 6) 〇13 ~ 〇18 / m / min is 2 to 3 to 5 times of 0 052Mm / min in the case of polishing without electricity (Example 4). In particular, the current density of 0.28A / dm2 is used for simultaneous polishing of the composite plating (the best conditions for energizing the example. That is, the plating layer increase rate of the polisher is only 0.001 ^ m / mi_ ^ is small, and the silicon wafer removal rate is small. 〇13 / nn / min, which is close to the traditional mechanical chemical polishing (MCP) or chemical mechanical polishing (CMp). For the surface roughness measurements of Examples 5 and 6 before and after polishing, it can be found that the silicon crystals before polishing The round surface appears dark, and the average roughness & is about 545nm. However, the polished silicon wafer surface shows a bright mirror surface, and the flat & average roughness Ra is about 2nm. The above example is only to illustrate the principle and Its effect does not limit the present invention. Therefore, those skilled in the art can still modify and change the above embodiments without departing from the spirit of the present invention. The scope of the rights of the present invention should be listed in the scope of patent application described later. Description] Figure 1 shows a schematic diagram of a conventional wafer ultra-precision polishing device; Figure 2 shows a schematic diagram of a conventional wafer polishing device;

O: \ 90 \ 90659.DOC -16- 1244962 Garden J shows electrolytic dressing and grinding Figure 4 shows a schematic diagram of the device of the preferred embodiment of the present invention; Figure 5 shows the thickness of the light layer of the dimmer of Examples TF 6 to 6 Relation diagram with polishing ^ The symbol △ in the figure represents example work, 〇 represents example 2, and ▲ represents example 3, Figure 3.2: "Relationship between the removal amount of silicon wafers in columns 1 to 6 and polishing time 2" towel number △ stands for example, ◦ stands for example 2, ▲ stands for example 3, stands for example 4 'for example 5', and ♦ stands for example 6; and

Figure 7 shows the different examples of $ ^ 之 生 ^, the change rate of the thickness of the plating layer of the polisher and the removal rate of the silicon wafer, in which the thickness of the upper culture is ⑸, T ",", and the electric power layer of the optical reader. The graph shows the silicon wafer removal rate. [Illustration of Symbols of Schematic Elements] 10 Conventional polishing device 11 Polishing block 12 Dresser 13 Dresser guide 14 Processing load 15 Prayer plate 16 Circulating pipeline 17 Wafer 18 Processing fluid 20 Conventional polishing device 21 Force α indenter 22 Disc

O: \ 90 \ 90659.DOC -17- 1244962 23 Polishing pad dressing mechanism 24 Working fluid supply mechanism 25 Wafer 2 6 General material 27 Polishing pad 2 8 Working fluid 30 Conventional Elid grinding device 31 Disc 32 Grinding stone 33 Disk 34 Current supply device 341 Carbon brush 342 Metal piece 35 Coolant supply mechanism 36 .Working fluid supply mechanism 37 Work piece 40 The device of the present invention which combines composite electroplating and surface abrasive grain processing 41 Processing tool assembly 411 Disk 412 Circle Disk rotating shaft 413 Plating layer or polishing device 42 Plating bath 421 Plating solution 43 Metal material O: \ 90 \ 90659 DOC -18-1244962 44 Power supply unit 441 Power supply unit 442 Variable resistor 443 Carbon brush 45 Machined part 46 Fixture assembly 461 Fixture 462 Spherical bearing 463 Workpiece shaft 464 Pin 47 Circulating stirring assembly 471 Agitator 472 Plating solution recovery tank 473 Pump 474. Silicone tubing

O: \ 90 \ 90659.DOC

Claims (1)

1244 篆 fe? 101744 Patent Application Office "Jian Rixiu (revised) original Chinese patent application scope replacement version (1994 month) Pick up and apply for patent scope: 1. A method of combining composite electroplating and surface abrasive grain processing Including: (a) providing a processing tool having a polisher; (b) providing a processed part, ⑷ using the throwing wire on the processing tool to process the surface of the processed part and perform abrasive grain processing; and During the surface processing performed in step (2), the electric clock metal is continuously compounded on the polisher, so that the light holder forms a composite electric clock metal layer. 2. The method according to the patent application &#alpha;, wherein after step ⑻, the method further comprises: (bl) providing-an electron microscope tank, the plating tank content is provided with a plating solution containing a certain amount of abrasive grains; 1 (b2) the j the polishing tool and the workpiece on the processing tool are placed in the plating solution of the electroplating bath; and (b3) the compound plating and abrasive grains are fastened on the polishing tool, so that the polishing tool forms a composite electric clock Floor. 3. For the females, tuganshi, and Wanfa in the scope of the patent application, the surface abrasive particles are polished. 4_ If the feminine taste in the first item of the patent application scope, Gan Shi 4 main :, Wanfa, where the surface abrasive grain processing is ground. 5 · If the patent application scope of the first item is female, Tu Gan Shi Leng Zhu I, Wan Fa, where the surface abrasive grain processing is grinding. 6 · —A device that combines composite electroplating with surface hemp and agricultural red processing, which is used to perform surface abrasive grain processing on a workpiece, the device includes: O: \ 90 \ 90659-940819.DOC processing workers /, "And piece, it has a polisher, the polisher has a -1-12, 1244962 composite electroplated metal layer to perform surface abrasive grain processing on the workpiece;-electroplating tank 'its content-containing a fixed amount of abrasive grains The electroplating solution, the processing tool, and the workpiece “The electric clock liquid is used to continuously composite plating the polisher during the surface processing of the workpiece by the polisher, so that the polisher forms a composite electroplated metal Layer; a metal material located in the electroplating tank to provide metal ions required in the process of the electric clock; and a power supply component that electrically connects the processing tool component and the metal material 'the power supply n component It is used to provide the current required in the process of the electric clock, so that the metal ions released by the metal material and the abrasive particles in the plating solution are deposited together in a polisher in the processing tool assembly. Plated metal bonded layer. 7. The device according to item 6 of the scope of patent application, further includes a cooler component for carrying the workpiece, and the fixture component corresponds to the processing tool component, so that the workpiece is surface-granulated. machining. 8. The device according to item 7 of the patent application scope, wherein the fixture assembly includes: a fixture 'for carrying the workpiece;-a spherical bearing connected to the fixture for connecting the surface of the workpiece with The surface of the processing tool component is in butt joint; a workpiece rotating shaft is connected with the spherical bearing, and a processing load is applied to the surface of the workpiece; the workpiece rotating shaft is rotated by external driving; and-a pin is used for clamping The jig and the workpiece rotation shaft can make the jig move along with the workpiece rotation shaft at the same time, so that the work can proceed. f0 \ 90659-940819.DOC ~ 2-1244962 Among them, the processing tool component package such as the sixth item in the scope of the patent application includes:,-disc, which has-throw, the polisher is a 1-in electric ballast layer to Surface abrasive grain processing is performed on the workpiece; and 61-a disk rotation shaft is connected to the disk, and the disk rotation shaft is driven by external driving and rotates, and the disk is rotated to perform processing · If the device of the scope of application for patent No. 6 further includes a stirrer for stirring the plating solution in the plating tank. 11. The device according to item 6 of the scope of patent application, further comprising a pump for sending the plating solution to the plating bath. 12. The device according to item 6 of the patent application, wherein the power supply assembly includes: a power supply for supplying a current during the electroplating process; a variable resistor for adjusting the current; and A carbon brush is electrically connected to the processing tool assembly to conduct the current. O: \ 90 \ 9O659-94O819.DOC 3-